Method for manufacturing a light emitting device

Abstract

The manufacturing method of a light-emitting device comprises the following steps: preparing an intermediate structure in which a plurality of stacked bodies are arranged along a first direction in a light-reflecting component, each stacked body comprising a first electrode and a second electrode arranged along a second direction, a semiconductor stacked body connected to the first electrode and the second electrode, and a light-transmitting component arranged on the semiconductor stacked body, the intermediate structure having a first surface for exposing the first electrode and the second electrode from the light-reflecting component; forming a first hole in the light-reflecting component between a first electrode of the first stacked body and a first electrode of the second stacked body in the first surface, and forming a second hole in the light-reflecting component between a second electrode of the first stacked body and a second electrode of the second stacked body; forming a conductive film on the exposed surface of the first electrode and the second electrode of each of the first stacked body and the second stacked body in the first surface, in the first hole, and in the second hole; and cutting the light-reflecting component and the conductive film at the position passing through the first hole and the second hole to obtain a plurality of light-emitting devices.

Description

Technical Field

[0001] The invention relates to a method for manufacturing a light emitting device. Background Art

[0002] Patent Document 1 discloses a side-light-emitting type light-emitting device. In the light-emitting device of Patent Document 1, a circuit board is provided on the back surface side, and thus there is a tendency that the thickness between the light-emitting surface and the back surface is increased.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2012-124191 Summary of the invention

[0004] Therefore, in one embodiment of the present invention, an object is to provide a method for manufacturing a small light-emitting device.

[0005] A method for manufacturing a light-emitting device according to an embodiment of the present invention comprises the following steps: preparing an intermediate structure, wherein the intermediate structure is formed by arranging a plurality of stacked bodies including a first stacked body and a second stacked body adjacent to the first stacked body in a first direction in a light-reflecting member, wherein each stacked body comprises a first electrode and a second electrode arranged in sequence in a second direction orthogonal to the first direction, a semiconductor stacked body connected to the first electrode and the second electrode, and a light-transmitting member arranged on the semiconductor stacked body, wherein the intermediate structure has a first electrode and a second electrode for receiving the first electrode and the second electrode; A first surface exposed from a light reflecting component; in the first surface, a first hole is formed in the light reflecting component between the first electrode of the first stack and the first electrode of the second stack, and a second hole is formed in the light reflecting component between the second electrode of the first stack and the second electrode of the second stack; a conductive film is formed on the exposed surfaces of the first electrode and the second electrode of each of the first stack and the second stack in the first surface, in the first hole, and in the second hole; and the light reflecting component and the conductive film are cut at positions passing through the first hole and the second hole to obtain a plurality of light emitting devices.

[0006] According to one embodiment of the present invention, a method for manufacturing a small light-emitting device can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0008] Figure 1B is based on Figure 1A A cross-sectional view along line AA' is shown.

[0009] Figure 2A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0010] Figure 2B is based on Figure 2A A cross-sectional view along line AA' is shown.

[0011] Figure 3A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0012] Figure 3B is based on Figure 3A A cross-sectional view along line AA' is shown.

[0013] Figure 4A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0014] Figure 4B is based on Figure 4A A cross-sectional view along line AA' is shown.

[0015] Figure 5A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0016] Figure 5B is based on Figure 5A A cross-sectional view taken along line BB' is shown.

[0017] Fig. 6A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0018] Figure 6B is based on Fig. 6A A cross-sectional view taken along line BB' is shown.

[0019] Fig. 7A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0020] Figure 7B is based on Fig. 7A A cross-sectional view taken along line BB' is shown.

[0021] Fig. 8A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0022] Figure 8B is based on Fig. 8A A cross-sectional view taken along line CC' is shown.

[0023] Fig. 9A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0024] Fig. 9B is based on Fig. 9A End view of line CC' shown.

[0025] Fig. 9CIt is a plan view showing another exemplary method of manufacturing the light emitting device according to the embodiment.

[0026] Fig. 10A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0027] Fig. 10B is based on Fig. 10A End view of line CC' shown.

[0028] Fig.11A It is a plan view showing a method for manufacturing a light emitting device according to an embodiment.

[0029] Fig. 11B is based on Fig.11A End view of line CC' shown.

[0030] Fig. 12A It is an end view showing the light source device involved in the embodiment.

[0031] Fig. 12B It is a front view showing the light source device involved in the embodiment.

[0032] Fig.13A It is a front view showing the light emitting device involved in the embodiment.

[0033] Fig. 13B It is a rear view showing the light emitting device according to the embodiment.

[0034] Fig. 13C It is a bottom view showing the light emitting device according to the embodiment.

[0035] Fig.14A It is a plan view showing a method for manufacturing a light emitting device according to a modification.

[0036] Fig. 14B is based on Fig.14A A cross-sectional view along line AA' is shown.

[0037] Fig.15A It is a top view of a light emitting device according to a modification.

[0038] Fig. 15B It is a top view of a light emitting device according to a modification.

[0039] Description of reference numerals:

[0040] 1…light-emitting device; 10…light-emitting element; 11…semiconductor laminate; 12a, 12b…electrodes; 13…adhesive layer (light-guiding member); 14…phosphor layer; 15…light-transmitting layer; 16…light-transmitting member; 20…laminated body; 21…light-reflecting member; 23…intermediate structure; 23…laminated body; 23a…first surface; 23b…second surface; 25…conductive film; 25A…first conductive film; 25B…second conductive film; 30…structure; 30a…light-emitting surface (upper surface); 30b…first surface (bottom surface); 30c…third surface; 30c1…electrode side region; 30c2…light-emitting side region; 30d…second surface (mounting surface); 30d1…first region (electrode side region); 30d2… The second area (light emitting side area); 30d3…middle area; 30e…the fourth surface; 30f…the fifth surface; 45…reflecting material; 50…light source device; 51…mounting substrate; 51a…upper surface; 52…joining component; 53…adhesive component; 80a…the first hole; 80b…the second hole; 100…substrate; 100a…upper surface; 101a, 101b…metal layer; 101c…convex portion; 101d…recess; 102…identification object portion; 103…joining component; 105a, 105b…groove (the second groove); 105a1, 105b1…side surface; 105c…groove; 107, 108…inter-electrode area; 110…the third groove; 121…adhesive sheet; 122…carrier; L…light. DETAILED DESCRIPTION

[0041] <Implementation Method>

[0042] Hereinafter, the manufacturing method of the light-emitting device involved in the embodiment, the structure of the light-emitting device after manufacturing, and the structure of the light source device equipped with the light-emitting device are described in turn. In addition, the figures referred to below are schematic drawings, and the constituent elements are appropriately emphasized or omitted. In addition, the size ratios of the constituent elements do not have to be consistent between the drawings. In addition, in the present invention, unless otherwise specifically mentioned, "vertical" or "orthogonal" includes the case where two straight lines, edges, surfaces, etc. are within the range of about 90°±3°. In the present invention, unless otherwise specifically mentioned, "parallel" includes the case where two straight lines, edges, surfaces, etc. are within the range of about 0°±3°.

[0043] The method for manufacturing a light emitting device according to the present embodiment includes the steps of preparing the intermediate structure 23 , forming the first hole 80 a and the second hole 80 b , forming the conductive film 25 , and obtaining a plurality of light emitting devices 1 .

[0044] Figure 1A to Figure 11B It is a diagram showing a method for manufacturing the light emitting device according to this embodiment. Figure 1A , Figure 2A , Figure 3A to Figure 11A It is a top view. Figure 1B , Figure 2B , Figure 3B to Figure 11B It is a cross-sectional view or an end view corresponding to each top view. Figure 1B is based on Figure 1A The cross-sectional view of the line A-A' shown in FIG. Figure 1A Same process. Figure 2B to Figure 4B Same here. Figure 5B is based on Figure 5A The cross-sectional view of the BB' line shown in FIG. Figure 5A Same process. Figure 6B as well as Figure 7B Same here. Figure 8B is based on Fig. 8A The cross-sectional view of the CC' line shown in FIG. Fig. 8A Same process. Figure 9B to Figure 11B Respectively represent end views. In addition, Fig. 9C and Fig. 9A The same refers to the top view.

[0045] (Step of Preparing Intermediate Structure 23)

[0046] First, an intermediate structure 23 is prepared, wherein a plurality of stacked bodies 20 including a first stacked body 20a and a second stacked body 20b adjacent to the first stacked body 20a are arranged in a first direction in a light reflecting member 21. Each stacked body 20 includes a first electrode 12a and a second electrode 12b arranged in sequence in a second direction orthogonal to the first direction, a semiconductor stacked body 11 connected to the first electrode 12a and the second electrode 12b, and a light-transmitting member 16 disposed on the semiconductor stacked body 11. In addition, the intermediate structure 23 has a first surface 23a where the first electrode 12a and the second electrode 12b are exposed from the light reflecting member 21. The process of preparing the intermediate structure 23 can be prepared by manufacturing according to an example of the manufacturing process described below, or by purchasing a pre-manufactured intermediate structure 23.

[0047] Hereinafter, an example of the case where the intermediate structure 23 is manufactured and prepared will be described in sequence.

[0048] First, if Figure 1A as well as Figure 1B As shown, a substrate 100 is prepared. The substrate 100 has, for example, an insulating base material as a base material, and has a metal layer 101a and a metal layer 101b on an upper surface 100a. There are a plurality of pairs of metal layers 101a and 101b, for example, arranged in a matrix.

[0049] In this specification, an XYZ rectangular coordinate system is used for convenience of description. The direction in which the metal layer 101a is arranged and the direction in which the metal layer 101b is arranged are set as the "X direction" (first direction), the direction in which the paired metal layers 101a and 101b are arranged are set as the "Y direction" (second direction), and the direction orthogonal to the X direction and the Y direction, that is, the direction perpendicular to the upper surface 100a is set as the "Z direction" (third direction).

[0050] like Figure 1B As shown, the metal layer 101a and the metal layer 101b can have a convex portion 101c on the upper surface. The convex portion 101c is located in the area opposite to the electrode of the light-emitting element 10 described later. Preferably, the planar shape of the upper surface of the convex portion 101c is substantially the same as the planar shape of the electrode of the corresponding light-emitting element 10. As a result, when the light-emitting element 10 is arranged on a pair of convex portions 101c via the bonding component 103, the self-alignment effect is effectively exerted on the light-emitting element 10, and the mounting accuracy of the light-emitting element 10 can be improved. For example, the planar shape of the upper surface of the convex portion 101c and the electrode of the light-emitting element 10 can form a rectangular shape in which the corresponding sides have substantially the same length (the allowable range is less than ±5%, preferably less than ±3%). In addition, in this embodiment, in order to simplify the drawings, an example is shown in which only four pairs of metal layers 101a and metal layers 101b are provided on the substrate 100, but it is not limited to this, and more metal layers 101a and metal layers 101b can also be provided.

[0051] As described later, the substrate 100 is removed at the stage of becoming the light emitting device 1. The maximum thickness of the substrate 100 is, for example, 100 μm to 500 μm, preferably 200 μm to 300 μm. Thus, the strength of the substrate 100 can be maintained, and the removal process of the substrate 100 can be easily performed. As the base material of the substrate 100, for example, glass fiber reinforced resin can be used. For example, the glass fiber reinforced resin preferably uses BT resin with a thermal expansion coefficient of 3 ppm / °C to 10 ppm / °C. Thus, a bonding component with a relatively high melting point, such as AuSn alloy, can be used as the bonding component 103. In addition, the glass fiber reinforced resin can also be a FR4 material with a thermal expansion coefficient of 14 ppm / °C to 15 ppm / °C. Thus, by using solder with a relatively low melting point as the bonding component 103, the reliability of the substrate 100 can be improved. In addition, the glass fiber contained in the base material is, for example, 30% to 70% by weight, preferably 40% to 60% by weight. Thus, the removal process of the substrate 100 can be easily performed.

[0052] The metal layer 101a and the metal layer 101b can use copper, copper alloy, etc. as a base material, for example. In addition, the metal layer 101a and the metal layer 101b can have a phosphorus-containing nickel plating layer, a palladium plating layer, a first gold plating layer, and a second gold plating layer in sequence on a base material of copper or a copper alloy. By stacking the above-mentioned plating layers on a base material including copper or a copper alloy, it is possible to suppress the diffusion of the copper component contained in the copper or copper alloy, and further suppress corrosion such as oxidation and sulfidation of the surface of the metal layer 101a, etc. Thus, for example, even if the substrate 100 is stored for a long time, it is possible to suppress the degradation of the substrate 100.

[0053] The substrate 100 preferably has an identification object portion 102 on the upper surface 100a. The identification object portion 102 is a mark for grasping the positional relationship between the metal layer 101a and the metal layer 101b when viewed from the upper surface 100a. The identification object portion 102 is, for example, a mark formed of a conductive material. The identification object portion 102 can be formed into a convex portion, a concave portion, or a shape formed by combining a convex portion and a concave portion. Although the position and number of the identification object portion 102 are arbitrary, it is arranged at a position that is not covered by the light reflecting component 21 in the subsequent process.

[0054] The identification target portion 102 can be formed simultaneously with the process of forming the metal layer 101a and the metal layer 101b. By forming the identification target portion 102 simultaneously with the process of forming the metal layer 101a and the metal layer 101b, the position accuracy of the component placement process described later using the identification target portion 102 as a marker can be improved. The identification target portion 102 can be formed, for example, as a component having a phosphorus-containing nickel plating layer, a palladium plating layer, a first gold plating layer, and a second gold plating layer in sequence on a base material of copper or a copper alloy.

[0055] Next, if Figure 2A as well as Figure 2BAs shown, a bonding component 103 is provided on the metal layer 101a and the metal layer 101b. The bonding component 103 is, for example, solder. In the case where the metal layer 101a and the metal layer 101b have a protrusion 101c, the bonding component 103 is provided on the protrusion 101c. Then, the light-emitting element 10 is mounted on the substrate 100 with the identification object portion 102 as a reference. The light-emitting element 10 is mounted in a manner that the lower surface of the first electrode 12a and the second electrode 12b are opposite to the upper surface of the metal layer 101a and the metal layer 101b of the substrate 100. The light-emitting element 10 is, for example, a light-emitting diode (LED). The light-emitting element 10 is provided with a semiconductor stack 11, a first electrode 12a, and a second electrode 12b. The light-emitting element 10 may also have a growth substrate on the surface of the semiconductor stack 11 opposite to the surface connected to the first electrode 12a and the second electrode 12b. In the semiconductor stack 11, an n-layer, a light-emitting layer, and a p-layer are stacked. One of the n-layer and the p-layer is connected to the first electrode 12a, and the other is connected to the second electrode 12b. The electrode 12a and the electrode 12b are made of a metal material such as copper (Cu). By mounting the light-emitting element 10 on the substrate 100, the first electrode 12a of the light-emitting element 10 is connected to the metal layer 101a via the bonding member 103, and the second electrode 12b is connected to the metal layer 101b via the bonding member 103.

[0056] Next, if Figure 3A as well as Figure 3B As shown, prepare the light-transmitting component 16. Figure 3A as well as Figure 3B As shown, the light-transmitting component 16 is preferably a component in which a phosphor layer 14 and a light-transmitting layer 15 are stacked. The phosphor layer 14 contains a phosphor, and the light-transmitting layer 15 does not substantially contain a phosphor. Substantially containing no phosphor means that the situation where the phosphor is inevitably mixed in is not excluded. In addition, the light-transmitting component 16 can be only the phosphor layer 14, or only the light-transmitting layer 15. The phosphor layer 14 and / or the light-transmitting layer 15 can be a single layer or a multilayer. In the case where the phosphor layer 14 is a multilayer, it can have a layer containing a green phosphor that absorbs the light of the light-emitting element 10 and radiates green light, and a layer containing a red phosphor that absorbs the light of the light-emitting element 10 and radiates red light. In addition, for example, the phosphor layer 14 can also be a single layer, containing a green phosphor and a red phosphor in one layer.

[0057] Next, an adhesive layer 13 is disposed on the upper surface of the light emitting element 10, and the light emitting element 10 is bonded to the translucent member 16. In the case where the translucent member 16 has the phosphor layer 14 and the translucent layer 15, for example, the translucent member 16 is bonded to the upper surface of the light emitting element 10 in a direction in which the phosphor layer 14 contacts the adhesive layer 13. It is preferred that the adhesive layer 13 (hereinafter referred to as the light guide member 13) after the translucent member 16 is bonded covers not only the upper surface of the light emitting element 10 but also the side surface of the light emitting element 10. Thus, the adhesion strength between the translucent member 16 and the light emitting element 10 can be improved. In addition, it is preferred that the light guide member 13 covers the light emitting layer of the light emitting element 10. Thus, a part of the light reaching the side surface of the light emitting element 10 can be suppressed from being reflected at the side surface and attenuated in the light emitting element 10, and the light can be taken out from the outside of the light emitting element 10 through the light guide member 13.

[0058] The light transmittance of the adhesive layer 13 and the light guide member 13 is preferably high. Therefore, generally, it is preferred that the adhesive layer 13 and the light guide member 13 substantially do not contain additives that reflect, absorb or scatter light. Substantially containing no additives means that the situation where additives are inevitably mixed in is not excluded. In addition, the adhesive layer 13 and the light guide member 13 may also contain light diffusing particles and / or fluorescent substances.

[0059] Thus, a plurality of stacked bodies 20 (see Figure 4A as well as Figure 4B ), the stack 20 includes a first electrode 12a and a second electrode 12b arranged in sequence along a second direction (Y direction), a semiconductor stack 11 connected to the first electrode 12a and the second electrode 12b, and a translucent component 16 arranged on the semiconductor stack 11.

[0060] Next, if Figure 5A as well as Figure 5BAs shown, a light reflecting component 21 is formed on the substrate 100. The light reflecting component 21 covers a pair of metal layers 101a, 101b, a bonding component 103 and a stacked body 20. The process of forming the light reflecting component 21 can be performed, for example, by the following steps: the substrate 100 formed with a plurality of stacked bodies 20 is arranged in a metal mold, a resin material that becomes the light reflecting component 21 is injected into the metal mold, and the resin material is solidified. Preferably, the light reflecting component 21 is formed so as not to cover the identification object part 102. Thus, in the process of forming the first groove 105 and other grooves described later, the grooves can be accurately formed with the identification object part 102 as a reference. The light reflecting component 21 is formed, for example, of a white resin. Thus, an intermediate structure 23 including the light reflecting component 21 and a plurality of stacked bodies 20 is formed on the substrate 100. In the intermediate structure 23 , a plurality of stacked bodies 20 including a first stacked body 20 a and a second stacked body 20 b adjacent to the first stacked body 20 a are arranged in the first direction (X direction) within the light reflecting member 21 .

[0061] exist Fig. 6A as well as Figure 6B In the embodiment, the lower surface of the intermediate structure 23 is set as the first surface 23a, and the upper surface is set as the second surface 23b. The first surface 23a of the intermediate structure 23 is the surface on the opposite side of the second surface 23b, and faces the upper surface 100a of the substrate 100. Fig. 6A as well as Figure 6B As shown, it is preferred that the grooves 105a and 105b extending in the second direction (Y direction) and the grooves 105c extending in the first direction (X direction) are formed on the second surface 23b of the intermediate structure 23 with the identification object portion 102 as a reference. In other words, it is preferred that the shape of the light-emitting surface side of the obtained light-emitting device 1 is formed with the identification object portion 102 as a reference. Thereby, the shape of the light-emitting surface side of the light-emitting device 1 can be accurately formed.

[0062] exist Fig. 6A In the first direction (X direction), grooves 105a and grooves 105b are arranged alternately. Groove 105a is thicker than groove 105b and deeper than groove 105b. Grooves 105a and 105b are collectively referred to as "first grooves 105". One first groove 105 is formed between each stacked body 20 in the light reflecting component 21. It is preferred that the first groove 105 does not penetrate the intermediate structure 23 in the third direction (Z direction). As a result, it is possible to suppress the reduction in the strength of the intermediate structure 23 and facilitate subsequent processes. Groove 105c, for example, has the same width as groove 105a and the same depth as groove 105a. Grooves 105a, 105b and 105c can be formed by cutting, laser, etc. In addition, grooves 105a and 105b can be the same width and can also be the same depth. As a result, for example, grooves 105a, 105b, and 105c can be formed using one scraper.

[0063] Here, the preferred embodiment of the width and depth of the grooves 105a, 105b, and 105c is described. The width of the groove 105a is, for example, 0.2 to 0.9 times, preferably 0.3 to 0.75 times, of the separation distance between the adjacent stacks 20 in the first direction (X direction) on the second surface 23b of the intermediate structure 23. In addition, the width of the groove 105a is 25 μm to 200 μm, preferably 50 μm to 100 μm, on the second surface 23b of the intermediate structure 23. The width of the groove 105b is, for example, 0.15 to 0.5 times, preferably 0.2 to 0.35 times, of the separation distance between the adjacent stacks 20 in the first direction (X direction) on the second surface 23b of the intermediate structure 23. In addition, the width of the groove 105b is 25 μm to 150 μm, preferably 40 μm to 80 μm, in the second surface 23b of the intermediate structure 23. The width of the groove 105c is, for example, 0.25 to 0.65 times, preferably 0.3 to 0.55 times, the separation distance between the adjacent stacked bodies 20 in the second direction (Y direction) in the second surface 23b of the intermediate structure 23. In addition, the width of the groove 105c is 25 μm to 200 μm, preferably 50 μm to 100 μm, in the second surface 23b of the intermediate structure 23.

[0064] It is preferred that the bottom surfaces of the grooves 105a and 105b are located below the upper surface of the light emitting element 10 in the third direction (Z direction). Thus, the thickness of the light reflecting member 21 located between the side surfaces 105a1 and 105b1 formed by the grooves 105a and 105b and the side surfaces of the light-transmitting member 16 can be formed to a desired thickness. Thus, for example, the thickness of the light reflecting member 21 in this region can be formed to a thickness that suppresses light emitted from the side surfaces of the light-transmitting member 16 to the outside from passing through the light reflecting member 21 and leaking to the outside. As a result, a light-emitting device with good light extraction can be obtained. The thickness of the light reflecting member 21 located between the side surfaces 105a1 and 105b1 formed by the grooves 105a and 105b and the side surfaces of the light-transmitting member 16 is, for example, 15 μm to 50 μm, preferably 20 μm to 30 μm. The thickness of the light reflecting member 21 between the side surfaces 105a1 and 105b1 formed by the grooves 105a and 105b and the side surface of the light-transmitting member 16 is, for example, 3 / 40 to 1 / 4 times, preferably 1 / 10 to 3 / 20 times, the thickness of the light-emitting element 10 in the first direction (X direction).

[0065] In addition, it is preferred that the bottom surface of the groove 105b is located above the bottom surface of the groove 105a in the third direction (Z direction). In the process of forming the first hole 80a and the second hole 80b described later, it is preferred that the first hole 80a and the second hole 80b do not penetrate the groove 105b and are formed opposite to the groove 105b. In this case, by making the bottom surface of the groove 105b located above the bottom surface of the groove 105a, the first hole 80a and the second hole 80b can be formed deeper in the third direction (Z direction). As a result, the area for forming the conductive film 25 in the first hole 80a and the second hole 80b can be ensured more widely. As a result, the area of ​​the conductive film 25 located on the mounting surface of the obtained light-emitting device 1 is increased, so that the bonding strength between the light-emitting device 1 and the mounting substrate 51 can be improved when the light-emitting device 1 is mounted on the mounting substrate 51 via the bonding member 52. On the other hand, by positioning the bottom surface of the groove 105a lower than the bottom surface of the groove 105b, the thickness of the light reflecting member 21 between the side surfaces 105a1 and 105b1 formed by the groove 105a and the side surface of the stacked body 20 can be formed to a desired thickness in a wide range. Thus, it is possible to suppress the light emitted from the side surface of the stacked body 20 to the outside from passing through the light reflecting member 21 and leaking to the outside. Thus, for example, the thickness of the light reflecting member 21 in this region can be formed to a thickness that suppresses the light emitted from the side surface of the stacked body 20 to the outside from passing through the light reflecting member 21 and leaking to the outside. In addition, when the bottom surface of the groove is a curved surface, the entire curved surface is set as the bottom surface of the groove.

[0066] Next, if Fig. 7A as well as Figure 7B As shown, the light reflecting component 21 located on the second surface 23b of the intermediate structure 23 is removed. As a result, the light-transmitting layer 15 of the light-transmitting component 16 is exposed on the newly formed second surface 23b. In the process of removing the light reflecting component 21, in addition to the light reflecting component 21 located on the second surface 23b, a part of the light-transmitting layer 15 of the light-transmitting component 16 located therebelow can also be removed. The light-transmitting layer 15 is located above the fluorescent layer 14, so in the process of removing the light reflecting component 21, the possibility of the fluorescent layer 14 being accidentally removed can be reduced. As a method for removing the light reflecting component 21, known methods such as grinding, etching, cutting, and sandblasting can be used. In addition, the process of removing the second surface 23b of the intermediate structure 23 can also be performed before the process of forming the grooves 105a, 105b, and 105c.

[0067] Next, if Fig. 8A as well as Figure 8B As shown, the second surface 23b of the intermediate structure 23 is fixed to the carrier 122 via the adhesive sheet 121. The carrier 122 is, for example, a silicon wafer or a metal substrate. In the following description, the up-down direction of the figure is reversed relative to the description so far. Figure 1A to Figure 7BIn the figure, the direction from the semiconductor stack 11 toward the light-transmitting member 16 is set as the upward direction in the figure, but Figures 8A to 11B In the drawings, the direction from the light-transmitting member 16 toward the semiconductor stack 11 is set as the upward direction in the drawings, and the description is also described accordingly.

[0068] Next, the substrate 100 is removed. In the process of removing the substrate 100, for example, a grinding machine is used to grind the range from the upper side of the substrate 100 to a part of the first electrode 12a and the second electrode 12b of the light-emitting element 10. In the process of removing the substrate 100, a part of the light-reflecting member 21 and a part of the bonding member 103 are removed. By removing the substrate 100, the light-emitting device 1 manufactured in the subsequent process can be miniaturized. As a method for removing the substrate 100, known methods such as grinding, etching, cutting, and sandblasting can be used. In particular, grinding is preferably used as a method for removing the substrate 100. As a result, the exposed surface of the light-reflecting member 21, the exposed surface of the first electrode 12a and the second electrode 12b, and the exposed surface of the bonding member 103 are located on the same plane, so that the first surface 23a of the intermediate structure 23 can be formed flat. As a result, it is possible to suppress the deviation of the shape of the light-emitting device 1 in a plurality of light-emitting devices 1. By removing the substrate 100, the intermediate structure 23 can be prepared. The electrodes 12a and 12b are exposed on the first surface 23a of the intermediate structure 23. By removing the substrate 100, the thickness of the obtained light-emitting device 1 from the light-emitting surface to the back surface can be reduced, and a small light-emitting device 1 can be obtained. In addition, only a part of the bonding member 103 can be removed, or all of it can be removed.

[0069] In addition, it is preferable to perform a cleaning step after the step of removing the substrate 100. By performing the cleaning step, even if the removal debris of the substrate 100 and the like adheres and remains on the surface of the intermediate structure 23, the removal debris can be effectively removed. The cleaning step is performed by spraying gas or liquid, spraying sublimated particles such as solid carbon dioxide, or immersing in liquid.

[0070] The above is an explanation of an example of the case where the intermediate structure 23 is manufactured and prepared. In addition, as described above, the process of preparing the intermediate structure 23 can also be carried out by purchasing Fig. 8A as well as Figure 8B The intermediate structure 23 shown in FIG. 1 is prepared.

[0071] (Step of Forming First Hole 80a and Second Hole 80b)

[0072] Next, if Fig. 9A as well as Fig. 9BAs shown, in the first surface 23a of the intermediate structure 23, the first hole 80a is formed in the light reflecting member 21 located between the first electrode 12a of the first stack 20a and the first electrode 12a of the second stack 20b, and the second hole 80b is formed in the light reflecting member 21 located between the second electrode 12b of the first stack 20a and the second electrode 12b of the second stack 20b. The first hole 80a and the second hole 80b are formed in order to arrange the conductive film 25 on the surface that becomes the mounting surface of the light emitting device 1 in the step of forming the conductive film 25 described later. In the case where the intermediate structure 23 has the first groove 105, for example, the first hole 80a and the second hole 80b are formed at positions opposite to the groove 105b. Furthermore, when viewed from above, the first hole 80a may be formed so that the entire first hole 80a is located between the adjacent first electrodes 12a, or may be formed so that a portion of the first hole 80a is located between the adjacent first electrodes 12a. The same applies to the second hole 80b.

[0073] exist Fig. 9A as well as Fig. 9B In the embodiment, the first hole 80a and the second hole 80b are formed to open on the first surface 23a, and are not opened on the second surface 23b located on the opposite side of the first surface 23a. In the case where the intermediate structure 23 has the first groove 105, it is preferred that the first hole 80a and the second hole 80b do not reach the groove 105b. Thus, it is possible to prevent the conductive film 25 from being unintentionally formed on the light-emitting surface side. In addition, the first hole 80a and the second hole 80b may also be formed to open on the first surface 23a and the second surface 23b. Thus, the conductive film 25 can be formed in a wider range, so when the light-emitting device 1 is arranged on the mounting substrate 51 via the bonding component, the bonding strength between the light-emitting device 1 and the mounting substrate 51 can be improved.

[0074] It is preferable that the first hole 80a and the second hole 80b are formed at positions facing every other first groove 105. Fig. 9A as well as Fig. 9B In the embodiment, the first hole 80a and the second hole 80b are formed at positions opposite to the groove 105b, but are not formed at positions opposite to the groove 105a. Fig. 9A as well as Fig. 9B In the embodiment, a pair of holes (first hole 80a and second hole 80b) are arranged between adjacent stacked bodies 20. In other words, two stacked bodies 20 have a pair of holes in common. Thus, the distance between the plurality of stacked bodies 20 can be shortened compared to the case where a pair of holes is formed with respect to one stacked body 20. As a result, the number of light-emitting devices 1 obtained from the intermediate structure 23 can be increased.

[0075] The first hole 80a may be formed in one or more than one manner between the first electrode 12a of the first stack 20a and the first electrode 12a of the second stack 20b. In addition, the second hole 80b may be formed in one or more than one manner between the first electrode 12a of the first stack 20a and the first electrode 12a of the second stack 20b. By having more than two first holes 80a and / or second holes 80b, the adhesion strength between the conductive film 25 and the intermediate structure 23 described later is improved. In addition, between adjacent stacks 20, a third hole may be formed between the first hole 80a and the second hole 80b. The third hole is not located between the adjacent first electrodes 12a and the adjacent second electrodes 12b. The third hole may have a conductive film 25 formed on the surface, or may have only a light reflecting component 21 without having a conductive film 25 formed on the surface.

[0076] like Fig. 9C As shown, the first hole 80a and the second hole 80b can be formed in a manner of opening relative to the first cutting line X1 and the second cutting line Y1, respectively. The first cutting line X1 is a cutting line parallel to the first direction (X direction), and the second cutting line Y1 is a cutting line parallel to the second direction (Y direction). The light emitting device 1 is obtained by cutting through a pair of first cutting lines X1 and a pair of second cutting lines Y1. In addition, at least one of the pair of second cutting lines Y1 is set to pass through the first hole 80a and the second hole 80b. By forming the first hole 80a and the second hole 80b in a manner of opening relative to the first cutting line X1 and the second cutting line Y1, a conductive film 25 with a wider width can be formed on the mounting surface of the light emitting device 1. As a result, the heat dissipation of the mounting surface side of the light emitting device 1 is improved. Furthermore, when the light emitting device 1 is disposed on the mounting substrate 51 , the contact area between the bonding member and the light emitting device 1 increases, thereby improving the contact strength between the light emitting device 1 and the mounting substrate 51 .

[0077] In addition, if Fig. 9A As shown, the first hole 80a and the second hole 80b may be formed in a manner that they are open relative to the second cutting line Y1 and not open relative to the first cutting line X1. As a result, in the obtained light emitting device 1, a pair of side surfaces located in the first direction (X direction) do not form a part of the hole. As a result, for example, when the light emitting device 1 is mounted on the mounting substrate 51 via the bonding component, it is possible to suppress the bonding component from flowing outward from the pair of side surfaces of the light emitting device 1 located in the first direction (X direction). As a result, the mounting area of ​​the light emitting device 1 including the bonding component can be reduced.

[0078] In addition, in the second direction (Y direction), the lengths of the first hole 80a and the second hole 80b are preferably longer than the lengths of the first electrode 12a and the second electrode 12b. Thus, when the light emitting device 1 is mounted on a mounting substrate using a bonding member such as solder, the possibility of tombstone phenomenon occurring in the light emitting device 1 or the light emitting device 1 being arranged in a state where the light emitting surface 30a of the light emitting device 1 is tilted can be reduced.

[0079] The width of the first hole 80a and the second hole 80b is, for example, 0.45 to 0.6 times, preferably 0.5 to 0.55 times, the separation distance between the first electrodes 12a adjacent in the first direction (X direction). In addition, the width of the first hole 80a and the second hole 80b is 100 μm to 180 μm in the first surface 23a of the intermediate structure 23, preferably 120 μm to 160 μm. In addition, the width of the first hole 80a and the second hole 80b can be greater than the width of the groove 105a and the groove 105b. As a result, the volume of the conductive film 25 formed in the first hole 80a and the second hole 80b can be increased, and the heat dissipation of the obtained light-emitting device 1 can be improved.

[0080] (Step of Forming Conductive Film 25)

[0081] Next, if Fig. 10A as well as Fig. 10B As shown, a conductive film 25 is formed on the first electrode 12a and the second electrode 12b of each stacked body 20 exposed in the first surface 23a of the intermediate structure 23, and on the inner surface of the first hole 80a and the second hole 80b. As a method for forming the conductive film 25, known methods such as sputtering, evaporation, coating, stamping, printing, ALD, CVD, and plating can be used. In particular, sputtering is preferably used as a method for forming the conductive film 25. By using sputtering, the bonding strength of the first electrode 12a and the second electrode 12b exposed in the first surface 23a and the light reflecting part 21 located on the inner surface of the first hole 80a and the second hole 80b is easily improved. As a result, it is possible to suppress the conductive film 25 from peeling off from the first surface 23a and the inner surface of the first hole 80a and the second hole 80b.

[0082] As a method for forming the conductive film 25, for example, when sputtering is used, the conductive film 25 may also be formed in the inter-electrode region 107 between the first electrode 12a and the second electrode 12b. In this case, a process of selectively removing the conductive film 25 formed in an unnecessary region is performed. The process of selectively removing the conductive film 25 is, for example, to selectively remove the conductive film 25 by laser irradiation, etching, sandblasting, or photolithography. Specifically, the conductive film 25 covering the inter-electrode region 107 between the first electrode 12a and the second electrode 12b in the first surface 23a is removed, and the conductive film 25 covering the region between the adjacent first electrodes 12a and the adjacent second electrodes 12b, that is, the inter-electrode region 108 where the first hole 80a and the second hole 80b are not formed is removed. As a result, the light reflecting member 21 located in the inter-electrode region 107 and the inter-electrode region 108 is exposed. On the other hand, the electrode 12a and the electrode 12b are covered with the conductive film 25. In addition, the inner surfaces of the first hole 80 a and the second hole 80 b are also covered with the conductive film 25 .

[0083] As a method for selectively removing the conductive film 25, it is preferred to use laser irradiation. By using laser irradiation, it is possible to pattern the conductive film 25 without using a mask or the like. In addition, by irradiating the conductive film 25 with laser, laser ablation can be generated to remove a portion of the conductive film 25. In addition, laser ablation is the following phenomenon: if the irradiation intensity of the laser irradiated on the surface of the solid becomes above a certain size (threshold), the surface of the solid is removed. In the case of removing the conductive film 25 by laser irradiation, it is preferred that the wavelength of the laser be selected to be a wavelength that is lower than the reflectivity of the conductive film 25, such as a wavelength with a reflectivity of 90% or less. For example, in the case where the outermost surface of the conductive film 25 is gold (Au), it is preferred to use a laser with a shorter emission wavelength than that of the green region (e.g., 550nm) than a laser in the red region (e.g., 640nm). In this way, laser ablation can be efficiently generated, thereby improving mass productivity.

[0084] In addition, for example, a mask may be formed and the conductive film 25 may be provided, or a conductive paste may be provided partially, so that the conductive film 25 is formed only on the first electrode 12a and the second electrode 12b and on the inner surface of the first hole 80a and the second hole 80b. Thus, the process of selectively removing the conductive film 25 can be omitted, and the manufacturing process can be shortened. In the case of partially providing the conductive paste, for example, by punching the conductive paste between the adjacent first electrodes 12a and between the adjacent second electrodes 12b, the conductive film 25 provided continuously on the first electrode 12a and the first hole 80a can be formed, and the conductive film 25 provided continuously on the second electrode 12b and the second hole 80b can be formed.

[0085] It is preferable that the conductive film 25 has excellent corrosion resistance and oxidation resistance. For example, the outermost layer of the conductive film 25 is a metal of the platinum group such as gold or platinum. In particular, it is preferable that the outermost layer of the conductive film 25 is gold having good solderability.

[0086] The conductive film 25 may be composed of only one layer of a single material, or may be composed of stacked layers of different materials. The conductive film 25 may be composed of a layer of gold, silver, tin, platinum, rhodium, titanium, ruthenium, molybdenum, tantalum, aluminum, tungsten, palladium or nickel, or an alloy thereof. In particular, it is preferred that the conductive film 25 include a high melting point metal such as ruthenium, molybdenum, tantalum, etc. Thereby, the heat resistance of the conductive film 25 can be improved. For example, in the case where the conductive film 25 is composed of a plurality of layers, by arranging these high melting point metals on the inner side of the outermost layer of the conductive film 25, the diffusion of Sn contained in the solder in the light emitting device 1 can be suppressed. The conductive film 25 can form a stacked structure of, for example, Ni / Ru / Au, Ti / Pt / Au, etc. In addition, as for the thickness of the metal layer including a high melting point metal such as ruthenium, it is preferred that about.

[0087] The plane shape of the conductive film 25 in the first surface 23a can be a rectangular shape, a circular shape, an elliptical shape, or a combination of these shapes. In addition, the outer edge of the conductive film 25 in the first surface 23a can be a straight line, a curve, or a shape formed by combining a straight line and a curve. For example, the plane shape of the conductive film 25 in the first surface 23a can be an L shape or a T shape. In addition, the plane shape of the conductive film 25 on the first electrode 12a and the plane shape of the conductive film 25 on the second electrode 12b can also be different. By making the plane shapes of the conductive films 25 different, it is easy to distinguish the polarity of the light-emitting device 1, for example.

[0088] The thickness of the conductive film 25 located on the first surface 23a may be the same as or different from the thickness of the conductive film 25 located on the inner surface of the first hole 80a and the second hole 80b. When the thickness of the conductive film 25 located on the first surface 23a is thicker than the thickness of the conductive film 25 located on the inner surface of the first hole 80a and the second hole 80b, the heat generated by the light emitting element 10 can be efficiently dissipated to the outside through the conductive film 25 located on the first surface 23a. In addition, when the thickness of the conductive film 25 located on the inner surface of the first hole 80a and the second hole 80b is thicker than the thickness of the conductive film 25 located on the first surface 23a, the heat generated by the light emitting element 10 can be efficiently dissipated to the mounting substrate side through the conductive film 25 located on the inner surface of the first hole 80a and the second hole 80b. The thickness of the conductive film 25 is, for example, 0.01 μm to 0.2 μm, preferably 0.05 μm to 0.1 μm.

[0089] In addition, the conductive film 25 located on the first surface 23a and the conductive film 25 located on the inner surface of the first hole 80a and the second hole 80b may be partially separated as long as the joined parts are electrically connected to each other when the obtained light-emitting device 1 is installed. For example, at the corner of the connection portion where the first surface 23a is connected to the inner surface of the first hole 80a, etc., the conductive film 25 located on the first surface 23a and the conductive film 25 located on the inner surface of the first hole 80a, etc. may be separated. The corner of the connection portion where the first surface 23a is connected to the inner surface of the first hole 80a, etc. is prone to be chipped or deformed by external force. However, near the corner, by separating the conductive film 25 located on the first surface 23a and the conductive film 25 located on the inner surface of the first hole 80a, etc., even if the above-mentioned external force is generated at the corner, the possibility of the external force affecting each conductive film 25 can be reduced. The separation distance between the conductive film 25 on the first surface 23a and the conductive film 25 on the inner surfaces of the first hole 80a and the second hole 80b can be set to be less than half of the thickness of the bulk bonding member (eg solder) before melting, for example.

[0090] (Step of Obtaining a Plurality of Light Emitting Devices 1)

[0091] Next, if Fig.11A as well as Fig. 11B As shown in FIG. 1 , the intermediate structure 23 is cut from the first surface 23a side to form the third groove 110. Fig.11A In the embodiment, each light emitting device 1 can be obtained by cutting along a pair of first cutting lines X1 and a pair of second cutting lines Y1. In addition, at least one of the pair of second cutting lines Y1 passes through the first hole 80a and the second hole 80b. The third groove 110 is formed at a position opposite to the groove 105a and the groove 105b. The third groove 110 reaches the groove 105a and the groove 105b. Thus, the third groove 110, the groove 105a and the groove 105b penetrate the intermediate structure 23 in the third direction (Z direction) and divide the intermediate structure 23. In this way, the third groove 110 is formed, and the conductive film 25 and the light reflecting component 21 are cut through the first hole 80a and the second hole 80b. As a result, a plurality of light emitting devices 1 can be obtained. As a cutting method, for example, it is preferable to cut by cutting while pouring a fluid such as water on the cut surface of the intermediate structure 23. Thus, it is possible to suppress the deformation of the light reflecting component 21 and the like due to the heat generated by cutting. As a cutting method, known cutting methods such as dicing including dry cutting and laser can be used.

[0092] The width of the third groove 110 is preferably larger than the width of the grooves 105a and 105b, and smaller than the width of the first hole 80a and the second hole 80b. By setting the width of the third groove 110 to be larger than the width of the grooves 105a and 105b, it is possible to prevent the width of the light-emitting device 1 on the side of the pair of electrodes 12a and 12b from being larger than the width of the light-emitting device 1 on the side of the light-transmitting member 16. Thus, the light-emitting device 1 can be miniaturized. In addition, by making the width of the third groove 110 smaller than the width of the first hole 80a and the second hole 80b, it is possible to prevent the conductive film 25 formed in the first hole 80a and the second hole 80b from being removed. In addition, in the first direction (X direction), the separation distance between the widest portion of the third groove 110 and the side surface of the light-emitting element 10 is set to, for example, 20 μm to 60 μm, preferably 30 μm to 40 μm. Thus, it is possible to prevent the light emitted from the side surface of the light-emitting element 10 from leaking to the outside. The width of the third groove 110 is, for example, 60 μm to 140 μm, or preferably 80 μm to 120 μm.

[0093] The depth of the third groove 110 is set to reach the depth of the groove 105a and the groove 105b. In addition, it is preferred that the third groove 110 is formed in the third direction (Z direction) so that the deepest part (bottom surface) of the third groove 110 is located above the upper surface of the light emitting element 10. As a result, the thickness of the light reflecting member 21 located on the side of the light-transmitting member 16 can be left thicker. As a result, it is possible to suppress the light emitted from the side of the light-transmitting member 16 to the outside from passing through the light reflecting member 21 and leaking to the outside. The depth of the third groove 110 is, for example, 50μm to 300μm, preferably 100μm to 200μm. In addition, the depth of the third groove 110 opposite to the groove 105a and the depth of the third groove 110 opposite to the groove 105b may be different. For example, the depth of the third groove 110 opposite to the groove 105b can be deeper than the depth of the third groove 110 opposite to the groove 105a. Thus, it is possible to enlarge the recess formed on the mounting surface side of the light emitting device 1. As a result, for example, when the light emitting device 1 is arranged on the mounting substrate 51 via the bonding member 52, even if the amount of the bonding member 52 is excessive, the remaining amount of the bonding member 52 can be accommodated in the recess. Thus, the possibility of arranging the light emitting device 1 in a state where the light emitting surface 30a of the light emitting device 1 is tilted can be reduced.

[0094] Next, the light emitting device according to the present embodiment manufactured as described above and the light source device equipped with the light emitting device will be described. Fig. 12A is an end view showing a light source device according to the present embodiment, Fig. 12B It is a front view of the light source device. Fig.13A is a front view showing a light emitting device according to this embodiment, Fig. 13B is a rear view of the light emitting device, Fig. 13C is a bottom view of the light emitting device. Fig. 12B is from Fig. 12A The light source device 50 is viewed from a direction D as shown. Fig.13A is from Fig. 12A The light emitting device 1 is viewed from the direction D shown in FIG. Fig. 13B is a diagram of the light emitting device 1 viewed from direction E, Fig. 13C This is a diagram showing the light emitting device 1 as viewed from a direction F.

[0095] The light source device 50 according to the present embodiment includes a mounting substrate 51, a light emitting device 1, and a pair of bonding members 52. The light emitting device 1 is bonded to the mounting substrate 51 by the pair of bonding members 52. The bonding members 52 are, for example, solder or conductive paste. Figures 13A to 13C In the figure, the mounting substrate 51 and the bonding member 52 are omitted.

[0096] (Light-emitting device 1)

[0097] Below, refer to Fig. 12A , Fig. 12B , Figures 13A to 13C The light emitting device 1 according to the present embodiment is described. The light emitting device 1 includes: a structure 30 including a light emitting element 10, a light transmissive member 16 disposed on the light emitting element 10, and a light reflecting member 21 covering the side surfaces of the light emitting element 10 and the light transmissive member 16; a pair of first conductive films 25A disposed on the first surface of the structure 30; and a pair of second conductive films 25B disposed on the second surface of the structure 30.

[0098] The structure 30 includes a light emitting surface 30a, a first surface 30b located on the opposite side of the light emitting surface 30a, a second surface 30d connected to the light emitting surface 30a and the first surface 30b and continuous with the first surface 30b, a third surface 30c located on the opposite side of the second surface 30d, a fourth surface 30e, and a fifth surface 30f. The light emitting surface 30a is continuous with the second surface 30d, the third surface 30c, the fourth surface 30e, and the fifth surface 30f via an edge line. In addition, the first surface 30b is continuous with the second surface 30d, the third surface 30c, the fourth surface 30e, and the fifth surface 30f via an edge line. The fourth surface 30e and the fifth surface 30f are relatively flat, and are formed entirely by the light reflecting member 21.

[0099] In this specification, the same terms as the light emitting surface 30a and the first surface 30b of the structure 30 are used to describe the surfaces of the light emitting device 1 corresponding to the surfaces of the structure 30. The light emitting device 1 is a side-emitting type (side-view type) light emitting device in which the second surface 30d is a mounting surface and the second surface 30d is arranged opposite to the upper surface 51a of the mounting substrate 51. Figure 1A as well as Figure 1B The upper surfaces 100 a of the substrates 100 shown in FIG. 1 are substantially parallel and face the same direction.

[0100] The structure 30 has at least one stack 20. The stack 20 functions as a light source of the light emitting device 1, and has a light emitting element 10 and a translucent component 16. The light emitting element 10 is, for example, a light emitting diode (LED), and has a semiconductor stack 11, a first electrode 12a, and a second electrode 12b. In the semiconductor stack 11, an n layer, a light emitting layer, and a p layer are stacked, and one of the n layer and the p layer is connected to the first electrode 12a, and the other is connected to the second electrode 12b. The first electrode 12a and the second electrode 12b are exposed from the light reflecting component 21 in the first surface 30b of the structure 30. As a result, the heat generated by the light emitting element 10 can be efficiently dissipated from the first surface 30b of the structure. Fig. 12A In the embodiment, the first surface 30b is relatively flat, and the light reflecting member 21 is provided around the electrode 12a and the electrode 12b.

[0101] The light-transmitting member 16 is disposed on the light-emitting element 10. By disposing the light-transmitting member 16 on the light-emitting element 10, the light-emitting element 10 can be protected from external stress. The side surface of the light-transmitting member 16 is covered by the light-reflecting member 21. As a result, the contrast between the light-emitting area and the non-light-emitting area is increased, and a light-emitting device with good boundary can be formed. Fig. 12A as well as Fig. 12B In the embodiment, the light emitting surface 30 a is relatively flat, and the light reflecting member 21 is provided around the light transmissive member 16 .

[0102] The light-transmitting component 16 may include a phosphor layer 14 and / or a light-transmitting layer 15. Preferably, the light-transmitting component 16 includes a phosphor layer 14 containing a phosphor. Thus, the light emitted by the light-emitting element 10 and the light emitted by the phosphor can be mixed to output the desired mixed color light. The phosphor can be uniformly dispersed in the phosphor layer 14, and the phosphor can be biased toward the light-emitting element 10 side more than the upper surface of the phosphor layer 14. By biasing the phosphor toward the light-emitting element 10 side more than the upper surface of the phosphor layer 14, it is possible to easily suppress the degradation of the moisture-sensitive phosphor due to moisture. As a moisture-sensitive phosphor, for example, a manganese-activated fluoride-based phosphor can be cited. Since light emission with a relatively narrow spectral line width can be obtained, the manganese-activated fluoride-based phosphor is a preferred phosphor from the viewpoint of color reproducibility. The phosphor can be one type of phosphor, or it can be a plurality of types of phosphors.

[0103] The phosphor layer 14 may include a plurality of phosphor layers. For example, the phosphor layer 14 may include a phosphor layer containing a manganese-activated fluoride phosphor and a phosphor layer containing a β-sialon phosphor. In addition, the phosphor layer 14 may be a single layer, or the single-layer phosphor layer 14 may contain a manganese-activated fluoride phosphor and a β-sialon phosphor.

[0104] The laminate 20 can be provided with a light-guiding component 13 between the light-emitting element 10 and the light-transmitting component 16. The light-guiding component 13 covers the side surface of the light-emitting element 10 and guides the light emitted from the side surface of the light-emitting element 10 toward the upper surface (light-emitting surface 30a) of the light-emitting device 1. By disposing the light-guiding component 13 on the side surface of the light-emitting element 10, it is possible to suppress a portion of the light reaching the side surface of the light-emitting element 10 from being reflected on the side surface and attenuated in the light-emitting element 10. The light-guiding component 13 can cover the upper surface and the side surface of the light-emitting element 10. Thus, the close contact strength between the light-emitting element 10 and the light-guiding component 13 can be improved. The light-guiding component 13 is, for example, a component including a resin material as a base material. As the resin material, for example, a light-transmitting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, a phenolic resin, etc. can be preferably used. In addition, it is preferred that the light transmittance of the light-guiding component 13 is high. Therefore, it is preferred that the light-guiding component 13 does not have a substance that reflects, absorbs or scatters light. The light guide member 13 is selected to have a higher transmittance of light from the light emitting element 10 than the light reflecting member 21 .

[0105] The light reflecting member 21 constitutes the outer surface of the light emitting device 1. Fig. 12A , Fig. 12B , Figures 13A to 13C In the light emitting device 1 shown, the light reflecting component 21 is also located on any outer surface of the light emitting surface 30a, the first surface 30b, the second surface 30d, the third surface 30c, the fourth surface 30e and the fifth surface 30f. In addition, the light reflecting component 21 covers the side surface of the light emitting element 10 and the side surface of the light-transmitting component 16. Since the light reflecting component 21 is located on the side surface of the light emitting element 10, the light reflecting component 21 can be used to reflect the light emitted to the side surface of the light emitting element 10, and the light can be efficiently taken out in the upward direction. Preferably, the light reflecting component 21 also covers the lower surface of the light emitting element 10. Thus, for example, light emitted downward from the light emitting element 10 can be reflected upward. In addition, since the light reflecting component 21 covers the lower surface of the light emitting element 10, the close contact strength between the light emitting element 10 and the light reflecting component 21 can be improved.

[0106] It is preferable that the material of the light reflecting member 21 is selected so that ΔT40<ΔT30 when, for example, the difference in thermal expansion coefficient between the light guiding member 13 and the light emitting element 10 (referred to as "first thermal expansion coefficient difference ΔT30") is compared with the difference in thermal expansion coefficient between the light reflecting member 21 and the light emitting element 10 (referred to as "second thermal expansion coefficient difference ΔT40"), ΔT40<ΔT30. Thus, it is possible to suppress the light guiding member 13 from peeling off from the light emitting element 10.

[0107] The third surface 30c is formed by the light reflecting member 21. The third surface 30c includes an electrode side region 30c1 disposed on the first electrode 12a and the second electrode 12b side and a light emitting side region 30c2 disposed on the light transmissive member 16 side. The electrode side region 30c1 is recessed relative to the light emitting side region 30c2 in the direction from the third surface 30c toward the second surface 30d. In addition, the electrode side region 30c1 is a side surface of the third groove 110, and the light emitting side region 30c2 is a side surface of the groove 105a.

[0108] exist Fig. 13C In the embodiment, the second surface 30d includes a first region 30d1 (electrode side region) arranged on the first electrode 12a and the second electrode 12b side, a second region 30d2 (light emitting side region) arranged on the translucent component 16 side, and an intermediate region 30d3 arranged between the first region 30d1 and the second region 30d2. The intermediate region 30d3 is recessed relative to the second region 30d2 (light emitting side region), and the first region 30d1 (electrode side region) is recessed relative to the intermediate region 30d3. Therefore, the first region 30d1 (electrode side region) is recessed relative to the second region 30d2 (light emitting side region). As a result, when the light emitting device 1 is mounted on the mounting substrate 51, it is easy to arrange the bonding component 52 between the mounting substrate 51 and the first region 30d1 (electrode side region). The second region 30d2 (light emitting side region) is the side surface of the groove 105b, the intermediate region 30d3 is the side surface of the third groove 110, and the first region 30d1 (electrode side region) is the side surfaces of the first hole 80a and the second hole 80b.

[0109] A pair of first conductive films 25A are provided on the first surface 30b of the structure 30. The pair of first conductive films 25A are separated from each other, cover the first electrode 12a and the second electrode 12b, and are connected to the electrode 12a and the electrode 12b, respectively. In the first surface 30b of the light emitting device 1, only the light reflecting member 21 and the pair of first conductive films 25A are exposed. Since the pair of first conductive films 25A are located on the first surface 30b, the heat generated by the light emitting element 10 can be efficiently dissipated from the first surface 30b side.

[0110] In the first surface 30b, the first conductive film 25A is preferably separated from the third surface 30c. Thus, when the light emitting device 1 is mounted on a mounting substrate using a bonding member such as solder, the possibility of tombstoning the light emitting device 1 or configuring the light emitting device 1 with the light emitting surface 30a of the light emitting device 1 tilted can be reduced.

[0111] In addition, the first conductive film 25A may also extend to the third surface 30c. In this case, for example, the end of the first conductive film 25A can be made consistent with the end of the third surface 30c. In addition, in addition to the first surface 30b, a part of the first conductive film 25A can also be formed on the third surface 30c. Thus, the heat dissipation of the light emitting device 1 can be improved.

[0112] In addition, in the first surface 30b, it is preferred that a pair of first conductive films 25A is separated from the fourth surface 30e and the fifth surface 30f. Thus, when the light emitting device 1 is mounted on the mounting substrate using the bonding component, it is possible to suppress the bonding component from flowing to the outside of the fourth surface 30e and the fifth surface 30f. As a result, the mounting area of ​​the light emitting device 1 including the bonding component can be reduced. For example, when a component in which a plurality of light emitting devices are arranged on the mounting substrate is used as a light source of an edge-type liquid crystal display device, dark areas are likely to form between the light emitting devices. However, in the light emitting device 1 in which the first conductive film 25A is formed in the above-mentioned configuration, when a plurality of light emitting devices are arranged on the mounting substrate in such a manner that the fourth surface 30e of one light emitting device faces the fifth surface 30f of the adjacent other light emitting devices, the distance between the light emitting devices can be shortened. Thus, the area in which the dark areas form between the light emitting devices can be reduced. In addition, the corners of the light emitting device 1 including the connection portion with the first surface 30b such as the fourth surface 30e are likely to be notched or deformed due to external forces. However, since the first conductive film 25A is separated from the fourth surface 30 e and the like, even if the external force described above is generated at the corner of the light emitting device 1 , the possibility that the external force affects the first conductive film 25A can be reduced.

[0113] In addition, the first conductive film 25A may also extend to the fourth surface 30e and the fifth surface 30f. In this case, for example, the end of the first conductive film 25A can be made consistent with the end of the fourth surface 30e and the fifth surface 30f. In addition, in addition to the first surface 30b, a part of the first conductive film 25A can also be formed on the fourth surface 30e and the fifth surface 30f. Thus, the heat dissipation of the light emitting device 1 can be improved.

[0114] A pair of second conductive films 25B are provided on the first region 30d1 (electrode side region) of the second surface 30d of the structure 30. The pair of second conductive films 25B are separated from each other and are provided to be continuous with the pair of first conductive films 25A. Thus, one of the pair of second conductive films 25B is integrated with one of the pair of first conductive films 25A to form a conductive film 25 on one side and is connected to the first electrode 12a. In addition, the other of the pair of second conductive films 25B is integrated with the other of the pair of first conductive films 25A to form a conductive film 25 on the other side and is connected to the second electrode 12b. The pair of conductive films 25 function as mounting electrodes for the light emitting device 1. The second conductive film 25B is not provided on the middle region 30d3 of the lower surface 30d (second surface) and on the second region 30d2 (light emitting side region). Since the pair of second conductive films 25B are located on the second surface 30d, the heat generated by the light emitting element 10 can be efficiently dissipated from the second surface 30d side.

[0115] In the second surface 30d, the second conductive film 25B is preferably separated from the light emitting surface 30a. Thus, when the light emitting device 1 is mounted on the mounting substrate using the bonding component, it is possible to suppress the bonding component from flowing to the light emitting surface 30a side that becomes the light emitting surface. As a result, the possibility of light emitted from the light emitting device 1 being blocked by the bonding component can be reduced.

[0116] In addition, the second conductive film 25B may also extend to the light exit surface 30a. In this case, for example, the end of the second conductive film 25B can be made consistent with the end of the light exit surface 30a. In addition, in addition to the second surface 30d, a part of the second conductive film 25B can also be formed on the light exit surface 30a. Thus, the heat dissipation of the light emitting device 1 can be improved.

[0117] In addition, in the second surface 30d, the second conductive film 25B is preferably separated from the fourth surface 30e and the fifth surface 30f. Thus, when the light emitting device 1 is mounted on the mounting substrate using the bonding component, it is possible to suppress the bonding component from flowing to the outside of the fourth surface 30e and the fifth surface 30f. As a result, the mounting area of ​​the light emitting device 1 including the bonding component can be reduced. For example, as a light source of an edge-type liquid crystal display device, when a component in which a plurality of light emitting devices are arranged on the mounting substrate is used, dark areas are likely to form between the light emitting devices. However, in the light emitting device 1 in which the second conductive film 25B is formed in the above-mentioned configuration, when a plurality of light emitting devices are arranged on the mounting substrate in a manner that the fourth surface 30e of one light emitting device faces the fifth surface 30f of the adjacent other light emitting devices, the distance between the light emitting devices can be shortened. Thus, the area in which the dark areas form between the light emitting devices can be reduced. In addition, the corners of the light emitting device 1 including the connection portion with the second surface 30d such as the fourth surface 30e are likely to be notched or deformed due to external forces. However, since the second conductive film 25B is separated from the fourth surface 30 e and the like, even if the above-mentioned external force is generated at the corner of the light emitting device 1 , the possibility that the external force affects the second conductive film 25B can be reduced.

[0118] In addition, the second conductive film 25B may also extend to the fourth surface 30e and the fifth surface 30f. In this case, for example, the end of the second conductive film 25B can be made consistent with the end of the fourth surface 30e and the fifth surface 30f. In addition, in addition to the second surface 30d, a part of the second conductive film 25B can also be formed on the fourth surface 30e and the fifth surface 30f. Thus, the heat dissipation of the light emitting device 1 can be improved.

[0119] (Light source device 50)

[0120] Next, refer to Fig. 12A as well as Fig. 12B A light source device 50 in which the light emitting device 1 is disposed on a mounting substrate 51 will be described. The light emitting device 1 is disposed on the mounting substrate 51 such that the second surface 30d serves as a mounting surface.

[0121] The mounting substrate 51 has a substrate and a wiring pattern formed on the substrate. The mounting substrate 51 is, for example, a strip-shaped component having a long side direction and a short side direction. A plurality of light-emitting devices 1 can be arranged on the mounting substrate 51, and the plurality of light-emitting devices 1 are preferably arranged on the mounting substrate 51 along the long side direction of the mounting substrate 51.

[0122] The light emitting device 1 and the mounting substrate 51 are mainly joined by a pair of joining members 52. The pair of joining members 52 are conductive and can be made of solder or other materials. In addition, the light emitting device 1 and the mounting substrate 51 can be joined by an adhesive member 53 other than the pair of joining members 52. The adhesive member 53 is, for example, an insulating adhesive. Fig. 12B In the light source device 50 shown, the adhesive member 53 bonds the second surface 30d (mounting surface) of the light emitting device 1 to the upper surface of the mounting substrate 51. Since the adhesive member 53 is used in addition to the pair of bonding members 52, the bonding strength between the light emitting device 1 and the mounting substrate 51 can be made stronger.

[0123] The pair of bonding members 52 is disposed at least between the first region 30d1 (electrode side region) of the second surface 30d (mounting surface) of the light emitting device 1 and the upper surface 51a of the mounting substrate 51, and is in contact with the pair of second conductive films 25B, respectively. Thus, the bonding members 52 bond the light emitting device 1 to the mounting substrate 51. The bonding members 52 are also disposed, for example, on the first surface 30b (back surface) of the light emitting device 1 and between the middle region 30d3 of the second surface 30d (mounting surface) and the mounting substrate 51, and are in contact with the first conductive film 25A.

[0124] In the second surface 30d (mounting surface) of the light emitting device 1, the area where the adhesive component 53 contacts is preferably located between a pair of bonding components 52. Thus, when an insulating adhesive material is used as the adhesive component 53, for example, it is possible to suppress the pair of bonding components 52 from accidentally contacting each other. In other words, in the second surface 30d (mounting surface) of the light emitting device 1, an insulating adhesive component 53 is arranged between a pair of bonding components 52, thereby making it easy to suppress electrical short circuits of the terminals. In addition, the adhesive component 53 is not located further outside than the bonding component 52, thereby suppressing the adhesive component 53 from flowing to the outside of the fourth surface 30e and the fifth surface 30f. In particular, it is particularly useful when the viscosity of the material that becomes the adhesive component 53 is lower than the viscosity of the material that becomes the bonding component 52. Thus, the mounting area of ​​the light emitting device 1 can be reduced.

[0125] For example, epoxy resin can be used for the adhesive member 53. Thus, for example, epoxy resin is used as the resin material that becomes the base material of the light reflecting member 21, so that the bonding strength between the adhesive member 53 and the light emitting device 1 can be improved. On the second surface 30d (mounting surface) of the light emitting device 1, the adhesive member 53 may be in contact with only the light reflecting member 21.

[0126] Hereinafter, a method for manufacturing the light emitting device 1 according to an embodiment of the present invention, and components of the light emitting device 1 and the light source device 50 will be described.

[0127] (Light emitting element 10)

[0128] The light emitting element 10 is, for example, an LED chip. The light emitting element 10 can have, for example, a semiconductor stacked structure including a nitride semiconductor (In x Al y Ga 1-x-y N, 0≤x, 0≤y, x+y≤1). Considering the luminous efficiency of the light-emitting device, the excitation spectrum of the phosphor, and the color mixing property, the luminous peak wavelength of the light-emitting element 10 is preferably not less than 400nm and not more than 530nm, more preferably not less than 420nm and not more than 490nm, and further preferably not less than 450nm and not more than 475nm.

[0129] The light-emitting element may be one or more than two. In the case of having a plurality of light-emitting elements, the plurality of light-emitting elements may be, for example, a plurality of blue light-emitting elements emitting blue light, three light-emitting elements emitting blue light, green light and red light, or a light-emitting element emitting blue light and a light-emitting element emitting green light. In the case of using the light-emitting device 1 as a light source of a liquid crystal display device, etc., as a light-emitting element, it is preferred to use a light-emitting element emitting blue light, two light-emitting elements emitting blue light, three or more light-emitting elements emitting blue light, or a light-emitting element emitting blue light and a light-emitting element emitting green light. The light-emitting element emitting blue light and the light-emitting element emitting green light are preferably light-emitting elements with a half-value width of less than 40nm, and more preferably light-emitting elements with a half-value width of less than 30nm. Thus, blue light and green light can easily have peaks. As a result, for example, when the light-emitting device is used as a light source of a liquid crystal display device, etc., the liquid crystal display device can achieve higher color reproducibility. In addition, a plurality of light emitting elements can be electrically connected in series, in parallel, or in a combination of series and parallel connection.

[0130] The planar shape of the light-emitting element 10 is not particularly limited, but can be formed into a square shape or a rectangular shape that is longer in one direction. In addition, as the planar shape of the light-emitting element 10, a hexagonal shape or other polygonal shapes can also be formed. The light-emitting element 10 has a pair of positive and negative electrodes. The positive and negative electrodes can be made of gold, silver, copper, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or their alloys. The side of the light-emitting element 10 can be perpendicular to the upper surface of the light-emitting element 10, or it can be inclined inward or outward.

[0131] (Light-transmitting member 16)

[0132] The light-transmitting member 16 is a member provided on the light-emitting element 10 to protect the light-emitting element 10. The light-transmitting member 16 may be a single layer or a multi-layer. When the light-transmitting member 16 has a multi-layer, the base materials of the layers may be the same or different.

[0133] As the base material of the light-transmitting component 16, a material that is light-transmitting with respect to the light of the light-emitting element 10 is used. In this specification, light-transmitting means that the transmittance of the peak wavelength of light emission of the light-emitting element 10 is 60% or more, preferably 70% or more, and more preferably 80% or more. The base material of the light-transmitting component 16 can be, for example, silicone resin, epoxy resin, phenolic resin, polycarbonate resin, acrylic resin, or modified resins thereof. In addition, the base material of the light-transmitting component 16 can also be glass. In particular, silicone resin and epoxy resin are preferably used due to their excellent heat resistance and light resistance. As silicone resins, dimethyl silicone resin, phenylmethyl silicone resin, diphenyl silicone resin, etc. can be cited. In addition, the modified resin in this specification includes hybrid resins.

[0134] The translucent component 16 may also contain light-diffusing particles. As light-diffusing particles, silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, etc. can be cited. The light-diffusing particles can be used alone or in combination of two or more of these. In particular, as light-diffusing particles, silicon oxide with a small linear expansion coefficient is preferably used. In addition, as light-diffusing particles, nanoparticles are preferably used. As a result, the scattering of light emitted by the light-emitting element is increased, and the amount of phosphor used can be reduced. In addition, nanoparticles are particles with a particle size of more than 1 nm and less than 100 nm. In addition, the particle size in this specification is mainly defined by D50.

[0135] The light-transmitting member 16 may include a phosphor. A phosphor is a member that absorbs at least a portion of the primary light emitted by the light-emitting element and emits secondary light of a wavelength different from that of the primary light. The phosphor may be one of the following phosphors alone or in combination of two or more.

[0136] Examples of the phosphor include yttrium-aluminum-garnet phosphors (e.g., Y3(Al, Ga)5O 12 :Ce), lutetium·aluminum·garnet phosphors (such as Lu3(Al,Ga)5O 12 :Ce), terbium·aluminum·garnet phosphors (such as Tb3(Al,Ga)5O 12 :Ce), silicate phosphors (such as (Ba, Sr)2SiO4:Eu), chlorosilicate phosphors (such as Ca8Mg(SiO4)4Cl2:Eu), β-sialon phosphors (such as Si 6-z Al z O z N8-z :Eu(0<z<4.2)), SGS phosphors (such as SrGa2S4:Eu), alkaline earth aluminate phosphors (such as (Ba,Sr,Ca)Mg x Al 10 O 17-x :Eu, Mn), α-sialon phosphors (such as M z (Si, Al) 12 (O, N) 16 (where 0<z≤2, M is Li, Mg, Ca, Y, and lanthanide elements other than La and Ce)), nitrogen-containing calcium aluminosilicate phosphors (e.g. (Sr, Ca)AlSiN3:Eu), manganese-activated fluoride phosphors (general formula (I) A2[M 1-a Mn a F6] (wherein, in the above general formula (I), A is at least one element selected from the group consisting of K, Li, Na, Rb, Cs and NH4, M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and a satisfies 0<a<0.2)). Yttrium aluminum garnet phosphors can shift the emission peak wavelength to the long wavelength side by replacing a part of Y with Gd. In addition, as a representative example of manganese-activated fluoride phosphors, manganese-activated calcium fluorosilicate phosphors (for example, K2SiF6:Mn) can be cited. In addition, the translucent component 16 can also be a sintered body of a phosphor and an inorganic substance such as aluminum oxide, or a plate-like crystal of a phosphor.

[0137] The light-transmitting member 16 can include a phosphor layer 14 including a phosphor and a light-transmitting layer 15 that does not substantially contain a phosphor. By providing the light-transmitting layer 15 on the upper surface of the phosphor layer 14, the light-transmitting layer 15 functions as a protective layer, and can suppress the degradation of the phosphor in the phosphor layer 14. In addition, substantially not containing a phosphor means that the situation where the phosphor is inevitably mixed in is not excluded, and the content of the phosphor is, for example, 0.05% by weight or less.

[0138] (Light reflecting member 21)

[0139] From the viewpoint of light extraction efficiency in the direction of the upper surface of the light emitting device 1, the light reflectivity of the light emitting element 10 at the peak wavelength is preferably 70% or more, more preferably 80% or more, and further preferably 90% or more. In addition, the light reflecting component 21 is preferably white. The light reflecting component 21 can contain a light reflective substance in the resin material that becomes the base material. The light reflecting component 21 can be obtained by solidifying a liquid resin material. The light reflecting component 21 can be formed by transfer molding, injection molding, compression molding, or potting.

[0140] The light reflecting component 21 can include a resin material as a matrix. The resin material that becomes the matrix can use a thermosetting resin, a thermoplastic resin, etc. Specifically, epoxy resin, silicone resin, modified epoxy resin such as silicone-modified epoxy resin, modified silicone resin such as epoxy-modified silicone resin, modified silicone resin, unsaturated polyester resin, saturated polyester resin, polyimide resin, modified polyimide resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenolic resin, acrylic resin, PBT resin and other resins can be used. In particular, as the resin material of the light reflecting component 21, it is preferred to use a thermosetting resin of an epoxy resin or silicone resin with excellent heat resistance and light resistance.

[0141] The light reflecting member 21 preferably contains a light reflecting substance in the resin material that becomes the matrix. As the light reflecting substance, it is preferable to use a component that is difficult to absorb light from the light emitting element and has a large refractive index difference relative to the resin material that becomes the matrix. Such a light reflecting substance is, for example, titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, etc.

[0142] (Adhesive Layer 13, Light Guide Member 13)

[0143] The light guide member 13 covers the side of the light emitting element 10 and guides the light emitted from the side of the light emitting element 10 toward the upper surface of the light emitting device. In other words, a part of the light reaching the side of the light emitting element 10 is reflected at the side and attenuated in the light emitting element 10, but the light guide member 13 can guide the light into the light guide member 13 and take it out to the outside of the light emitting element 10. The adhesive layer 13 and the light guide member 13 can use the resin material exemplified by the light reflecting member 21. In particular, as the adhesive layer 13 and the light guide member 13, it is preferred to use a thermosetting light-transmitting resin such as silicone resin, silicone-modified resin, epoxy resin, phenolic resin, etc. In addition, it is preferred that the light transmittance of the adhesive layer 13 and the light guide member 13 is high. Therefore, it is generally preferred that the adhesive layer 13 and the light guide member 13 substantially do not contain additives that reflect, absorb or scatter light. Substantially containing no additives means that it does not exclude the situation where additives are inevitably mixed. Furthermore, the adhesive layer 13 and the light guide member 14 may contain light diffusing particles and / or fluorescent material similar to the above-mentioned light-transmitting member 16 .

[0144] The light reflecting component 21, the light guiding component 13, and the light-transmitting component 16 can select epoxy resin as the resin material that becomes the base material. By selecting epoxy resin that has a higher strength than silicone resin when solidified, the strength of the light emitting device 1 can be improved. In addition, by forming the base material of each component with the same resin material, the close contact strength of each component can be improved. In addition, when epoxy resin is selected as the adhesive component 53, the bonding strength between the adhesive component 53 and the light reflecting component 21 and the like can be improved.

[0145] (Mounting substrate 51)

[0146] The mounting substrate 51 includes a plate-shaped base material made of glass epoxy resin, ceramic, or polyimide. In addition, the mounting substrate 51 includes a pad portion and a wiring pattern made of copper, gold, silver, nickel, palladium, tungsten, chromium, titanium, or an alloy thereof on the base material. The pad portion and the wiring pattern are formed by plating, lamination pressure bonding, pasting, sputtering, evaporation, etching, and the like.

[0147] (Jointing member 52)

[0148] The bonding member 52 can also use any known material in the field. Specifically, the bonding member 52 can include solders of tin-bismuth series, tin-copper series, tin-silver series, gold-tin series, etc. (specifically, alloys with Ag, Cu, Sn as main components, alloys with Cu and Sn as main components, alloys with Bi and Sn as main components, etc.), eutectic alloys (alloys with Au and Sn as main components, alloys with Au and Si as main components, alloys with Au and Ge as main components, etc.), conductive pastes of silver, gold, palladium, etc., bumps, anisotropic conductive materials, solders of low melting point metals, etc.

[0149] (Adhesive member 53)

[0150] The adhesive component 53 can be made of, for example, a resin material such as epoxy resin listed in the light-transmitting component 16, and a component listed in the bonding component 52. The bonding component 52 and the adhesive component 53 can be the same component or different components. When the bonding component 52 and the adhesive component 53 are different components, the bonding component 52 can be made of solder as a conductive material, and the adhesive component 53 can be made of a resin material such as epoxy resin.

[0151] <Modification>

[0152] Next, modified examples will be described. Fig.14A is a top view showing a method for manufacturing a light emitting device according to this modification example, Fig. 14B is based on Fig.14A A cross-sectional view along line AA' is shown. Fig.14A as well as Fig. 14BThe steps shown are equivalent to those in the above-mentioned embodiment. Figure 1A as well as Figure 1B The process shown.

[0153] like Fig.14A as well as Fig. 14B As shown, in this modification, a depression 101d is formed on the upper surface of the convex portion 101c of the metal layer 101a and the metal layer 101b of the substrate 100. Thus, when the bonding component 103 is applied to the convex portion 101c of the metal layer 101a and the metal layer 101b, even if the coating amount is excessive, the remaining amount of the bonding component 103 can enter the depression 101d. Thus, for example, the amount of the bonding component 103 located around the electrode 12a and the electrode 12b of the light-emitting element 10 can be suppressed, thereby suppressing the amount of the bonding component 103 exposed after the substrate 100 is removed. As a result, processes such as laser ablation for selectively removing the conductive film 25 can be easily performed. The manufacturing method, structure and effects other than the above in this modification are the same as those in the above-mentioned embodiment.

[0154] In addition, if Fig.15A As shown, a reflective material 45 including a light-reflective substance may be disposed on the light-emitting surface 30a of the light-emitting device 1. The reflective material 45 is disposed, for example, on the light-emitting surface 30a located directly above the light-emitting element 10. By disposing the reflective material 45 including a light-reflective substance directly above the light-emitting element 10 having the highest light output, the light output emitted directly above the light-emitting element 10 can be reduced, and the light output emitted from the entire light-emitting surface 30a of the light-emitting device 1 can be easily stabilized. The content of the light-reflective substance relative to the entire reflective material 45 is, for example, 5% by weight to 75% by weight, and preferably 8% by weight to 65% by weight. In addition, the light-emitting device 1 may include only one layer of the reflective material 45 on the light-emitting surface 30a, or may include a reflective material obtained by stacking the reflective material 45 multiple times.

[0155] In the case where the light emitting surface 30a of the light emitting device 1 has a long side and a short side, as shown in FIG. Fig.15A As shown in FIG. 1 , it is preferred that the planar shape of the reflective material 45 is a shape that is long in the long side direction. This makes it easy to stabilize the light output emitted from the light emitting surface 30a of the light emitting device 1 as a whole. Fig. 15B As shown, the planar shape of the reflective material 45 can also be configured in a manner that overlaps a pair of opposite sides of the light emitting surface 30a. Thus, the light output emitted in the long side direction can be further increased relative to the light output emitted in the short side direction. In addition, the planar shape of the reflective material 45 can be formed into various shapes.

[0156] Industrial Applicability

[0157] The present invention can be utilized in, for example, a light source of a display device or the like.

Claims

1. A method for manufacturing a light emitting device, characterized in that: The following processes are available: Preparing an intermediate structure, the intermediate structure being formed by arranging a plurality of stacked bodies including a first stacked body and a second stacked body adjacent to the first stacked body in a first direction in a light reflecting member, the plurality of stacked bodies each comprising a first electrode and a second electrode arranged in sequence in a second direction orthogonal to the first direction, a semiconductor stacked body connected to the first electrode and the second electrode, and a light-transmitting member disposed on the semiconductor stacked body, the intermediate structure having a first surface on which the first electrode and the second electrode are exposed from the light reflecting member; In the first surface, the light reflecting member is formed with a first hole when viewed from the second direction and located between the first electrode of the first stack and the first electrode of the second stack, and the light reflecting member is formed with a second hole when viewed from the second direction and located between the second electrode of the first stack and the second electrode of the second stack; forming a conductive film on the exposed surface of the first electrode and the second electrode of each of the first stack and the second stack in the first surface, in the first hole, and in the second hole; as well as The light reflecting member and the conductive film are cut at positions passing through the first hole and the second hole to obtain a plurality of light emitting devices.

2. The method for manufacturing a light emitting device according to claim 1, characterized in that: In the step of forming the first hole and the second hole, The first hole and the second hole are formed to open on the first surface and not to open on the second surface located on the opposite side of the first surface.

3. The method for manufacturing a light emitting device according to claim 1, characterized in that: In the step of forming the first hole and the second hole, The first hole and the second hole are formed to open on the first surface and a second surface located on the opposite side of the first surface.

4. The method for manufacturing a light emitting device according to any one of claims 1 to 3, characterized in that: The process of forming the conductive film includes the following steps: On the first surface, a metal film is arranged so as to continuously cover the exposed surfaces of the first electrode and the second electrode and the light reflecting member; and The metal film is irradiated with laser light to remove a portion of the metal film, thereby forming conductive films separated from each other.

5. The method for manufacturing a light emitting device according to any one of claims 1 to 3, characterized in that: The step of obtaining the plurality of light emitting devices is performed by cutting along a pair of first cutting lines parallel to the first direction and a pair of second cutting lines parallel to the second direction. The first hole and the second hole are opened with respect to the first cutting line and the second cutting line, respectively.

6. The method for manufacturing a light emitting device according to any one of claims 1 to 3, characterized in that: The step of obtaining the plurality of light emitting devices is performed by cutting along a pair of first cutting lines parallel to the first direction and a pair of second cutting lines parallel to the second direction. The first hole and the second hole are open with respect to the second cutting line, respectively, and are not open with respect to the first cutting line.

7. The method for manufacturing a light emitting device according to any one of claims 1 to 3, characterized in that: The steps of forming the first hole and the second hole are as follows: In the first direction, the widths of the first hole and the second hole are larger than the widths of the first electrode and the second electrode.

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