Wiring layer structure and preparation method thereof, and pad structure

Abstract

The present invention provides a wiring layer structure, a preparation method thereof, and a pad structure. The wiring layer structure includes a dielectric, a conductive layer embedded within the dielectric, and a frame and connecting wires. The frame includes at least two openings, dividing the frame into multiple sections. The connecting wires are located within the frame and have multiple connection ends connected to the frame. The connecting wires divide the interior of the frame into multiple regions. Each section is connected to a connection end of any connecting wire, and each region is connected to any opening. The present invention ensures that the entire conductive layer and dielectric are integral structures, improves the adhesion between the conductive layer and the dielectric, strengthens the mechanical strength of the dielectric structure, and does not increase the resistance of the conductive wires connected to the top pad.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, in particular to a wiring layer structure and a preparation method thereof, and also to a pad structure. Background Art

[0002] In the field of semiconductor manufacturing, solder pads are widely used to connect semiconductor dies to component package pins, and the solder pads are required to have good conductivity and mechanical strength.

[0003] The pad structure typically includes a wiring layer, which is used to layout the pad's input and output ports, thereby improving the performance and reliability of integrated circuit packages. Existing wiring layers lack mechanical strength, and when the wires are pulled during package wire bonding, the pad and the dielectric within the wiring layer can be easily uprooted or partially peeled off, damaging the pad structure.

[0004] The above information disclosed in this Background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art. Summary of the Invention

[0005] The object of the present invention is to provide a wiring layer structure and a preparation method thereof, which can improve the mechanical strength of the wiring layer without increasing the resistance value.

[0006] Another object of the present invention is to provide a pad structure.

[0007] According to one aspect of the present invention, there is provided a wiring layer structure, comprising:

[0008] dielectrics;

[0009] A conductor layer is embedded in the dielectric and includes a frame and connecting wires; the frame includes at least two openings, and the openings divide the frame into multiple sections; the connecting wires are located in the frame and have multiple connection ends connected to the frame, and the connecting wires divide the interior of the frame into multiple areas; wherein each of the sections is connected to a connection end of any of the connecting wires, and each of the areas is connected to any of the openings.

[0010] In an exemplary embodiment of the present invention, the connecting line includes a plurality of linear conductive wires, and the plurality of conductive wires are in contact with or cross each other.

[0011] In an exemplary embodiment of the present invention, the plurality of conductive wires are arranged symmetrically or asymmetrically.

[0012] In an exemplary embodiment of the present invention, the number of the conductive wires is 1 to 3.

[0013] In an exemplary embodiment of the present invention, the openings are symmetrically or asymmetrically distributed on the frame.

[0014] In an exemplary embodiment of the present invention, the number of the openings is 2 to 4.

[0015] In an exemplary embodiment of the present invention, the frame is rectangular, the number of the openings is four, and the connecting line includes two wires; wherein the four openings are respectively located at four right angles of the frame, the two wires cross each other perpendicularly, and the two ends of each wire are respectively connected to the midpoint of the frame frame;

[0016] In an exemplary embodiment of the present invention, the frame is rectangular, the number of the openings is four, and the connecting line includes two wires; wherein the four openings are respectively located at the centers of the four borders of the frame, the two wires cross, and the two ends of any wire are respectively connected to the opposite right-angle vertices of the frame.

[0017] In an exemplary embodiment of the present invention, the frame is rectangular, the number of the openings is four, and the connecting line includes three wires; wherein,

[0018] The four openings are respectively located at the centers of the four frames of the frame, wherein two of the wires are connected to sections of two frames on the same side, and the third wire is connected to the midpoints of the other two wires. In an exemplary embodiment of the present invention, the wire layer is located on one side of the pad metal layer, and the wiring layer further includes a via embedded in the dielectric and electrically connected to the wire layer, for connecting the wire layer to the pad metal layer.

[0019] In an exemplary embodiment of the present invention, the wiring layer further comprises a plurality of conductive layers located on a side of the wire layer away from the pad metal layer; the plurality of conductive layers are electrically connected to each other, and the plurality of conductive layers are electrically connected to the wire layer.

[0020] In an exemplary embodiment of the present invention, the material of the conductive line layer includes one or more of copper, aluminum, and tungsten.

[0021] According to another aspect of the present invention, there is also provided a method for preparing a wiring layer structure, comprising:

[0022] A first dielectric layer is formed, and a wire layer is formed within the first dielectric layer, wherein the wire layer includes a frame and a connecting wire, the frame includes at least two openings, the connecting wire is located within the frame and has a plurality of connection ends connected to the frame, and the connecting wire divides the interior of the frame into a plurality of areas, each of the areas being connected to any of the openings.

[0023] In an exemplary embodiment of the present invention, a second dielectric layer covering the first dielectric layer is formed on the first dielectric layer, and a via hole electrically connected to the wire layer is formed in the second dielectric layer.

[0024] In an exemplary embodiment of the present invention, forming a conductive line layer or a via in the dielectric layer includes:

[0025] Coating photoresist on the corresponding dielectric layer, exposing, developing, etching, and stripping to form grooves or through holes;

[0026] Conductive material is deposited in the groove to form the conductor layer; and conductive material is deposited in the through hole to form the via hole.

[0027] According to yet another aspect of the present invention, there is further provided a pad structure, comprising:

[0028] The wiring layer structure described above;

[0029] The pad metal layer is disposed on the wiring layer structure and is electrically connected to the wiring layer structure.

[0030] In an exemplary embodiment of the present invention, the conductive line layer and the pad metal layer of the wiring layer structure are electrically connected through vias.

[0031] In an exemplary embodiment of the present invention, it also includes: a protective layer covering the pad metal layer, the protective layer having an opening to expose the pad metal layer. The wire layer inside the wiring layer structure of the present invention is composed of an external frame and an internal connecting wire, the frame is open and each area inside the frame is connected to any opening, so that each section of the frame is connected to the connection end of any connecting wire. Compared with the prior art, the present invention ensures that the entire wire layer and the dielectric are respectively an integrated structure, which improves the adhesion between the inside of the wire layer and the dielectric, and because the wire layer is not blocked, the resistance value of the wire connected to the top pad is not increased. In addition, the dielectric is also an integral structure and is not cut by the wire layer, which strengthens the mechanical strength of the dielectric structure. When the packaging wire pulling welding wire process generates upward pulling, the entire wiring layer can provide more effective resistance to protect the structure of the pad.

[0032] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The accompanying drawings are incorporated into and constitute a part of this specification, illustrate embodiments consistent with the present invention, and together with the description, serve to explain the principles of the present invention. Obviously, the drawings described below are only some embodiments of the present invention, and it is clear that those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0034] Figure 1 A schematic diagram of the large-area metal structure of the conductor layer in the existing wiring layer;

[0035] Figure 2 This is a schematic diagram of the destruction of the existing wiring layer structure;

[0036] Figure 3 This is a schematic diagram of the fence-shaped structure of the conductor layer in the existing wiring layer;

[0037] Figure 4 A schematic diagram of a mesh-shaped chopped structure of a conductor layer in an existing wiring layer;

[0038] Figure 5 A schematic structural diagram of a conductor layer in a wiring layer of the present invention;

[0039] Figure 6 Schematic diagram of the structure of the frame in the conductor layer of the present invention;

[0040] Figure 7 Schematic diagram of the structure of the connecting wire in the conductor layer of the present invention;

[0041] Figure 8 is another structural schematic diagram of the conductor layer of the present invention;

[0042] Figure 9 This is another structural schematic diagram of the conductor layer of the present invention;

[0043] Figure 10 Schematic diagram of the process of preparing the wiring layer of the present invention;

[0044] Figure 11-13 This is a schematic structural diagram of the conductor layer preparation process of the present invention;

[0045] Figure 14 Schematic diagram of the structure of the via of the present invention;

[0046] Figure 15 Schematic diagram of the structure of the pad metal layer of the present invention;

[0047] Figure 16 Schematic diagram of the structure of the protective layer of the present invention.

[0048] In the figure, 1, dielectric; 2, wire layer; 3, via; 4, wiring layer; 5, pad metal layer; 6, photoresist; 7, protective layer; 11, first dielectric layer; 12, second dielectric layer; 21, frame; 22, connecting wire; 23, opening.

[0049] Figure 1 、 Figure 3-5 In 11-16, the upper part is a top view, and the lower part is a cross-sectional view of the structure at AA above. DETAILED DESCRIPTION

[0050] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent like or similar structures, and thus their detailed description will be omitted.

[0051] In the related art, when the conductive material in the wiring layer is designed as a large-area metal structure (Bulk Type, such as Figure 1 As shown in the figure, due to the poor bonding strength between the large area metal and the dielectric, there is a risk that the pad and the dielectric will be pulled up or partially peeled off when the package lead bonding pulls the welding wire, thus destroying the pad structure. Figure 2 shown.

[0052] The general practice in the industry is to design the conductive material in the wiring layer into a fence shape (Bar Type, such as Figure 3 The other type is the Mash Type, which reduces the contact area with the dielectric, but increases the line resistance because the line is cut. Figure 4 Although the design shown in the figure can keep the circuit open, the dielectric is chopped up, and the chopped dielectrics have poor bonding with each other, resulting in poor mechanical strength.

[0053] An embodiment of the present invention provides a wiring layer structure for arranging input and output ports of pads, thereby improving the performance and reliability of integrated circuit packaging.

[0054] like Figure 5 As shown, the structure of the wiring layer of the embodiment of the present invention includes a dielectric 1, a conductor layer 2 is embedded in the dielectric 1, the conductor layer 2 includes a frame 21 and a connecting wire 22, the frame 21 includes at least two openings 23, which divide the frame 21 into multiple sections; the connecting wire 22 is located in the frame 21, has multiple connection ends connected to the frame 21, and the connecting wire 22 divides the inside of the frame 21 into multiple areas; wherein each section is connected to the connection end of any connecting wire 22, and each area is connected to any opening 23.

[0055] This structure designs the frame as an open structure, and makes each internal area connected to any opening, ensuring that the entire dielectric material inside and outside the frame is still an integrated structure. Each section of the frame 21 is connected to the connection end of any connecting wire 22, ensuring that the wire layer 2 is an integrated connection structure. This structure combines the advantages of the existing fence-shaped and mesh-shaped structures. Compared with the fence-shaped structure, it improves the adhesion between the wire layer 2 and the dielectric 1, and because the wire layer 2 is not blocked, it does not increase the resistance value of the wire connected to the top pad. In addition, the dielectric 1 is also an integral structure and is not cut by the wire layer 2. Compared with the mesh-shaped chopped shape, the mechanical strength of the dielectric 1 structure is enhanced. When the package lead bonding pulls the welding wire upward, the entire wiring layer can provide more effective resistance to protect the structure of the pad.

[0056] The wiring layer structure of the embodiment of the present invention is described in detail below by taking the wiring layer as a rectangular structure as an example:

[0057] The dielectric in the wiring layer plays an insulating role and can be an inorganic dielectric material, an organic dielectric material, etc. The material and size of the dielectric can be selected and set as needed. In the above embodiment, the dielectric material can be a mixture of one or more of silicon oxide, silicon nitride and silicon oxynitride. The wire layer in the wiring layer refers to a layer composed of conductive material, which plays a conductive role. Its material can be one of the metal materials such as copper, aluminum, tungsten, etc., or a combination of any of them. The shape of the wiring layer can be determined according to the shape of the pad, including but not limited to circular, square, octagonal, etc., which are not listed here one by one.

[0058] The shape of the frame 21 of the conductor layer includes, but is not limited to, circular, rectangular and other polygonal shapes according to needs. The opening 23 on the frame completely breaks the frame into several independent sections. The shape of the opening is not limited and can be a rectangular opening, or a trapezoidal, parallelogram or other opening. The position of the opening can be anywhere in the frame, for example, it can be the center of a certain line segment, or it can be the intersection of two lines. The size and thickness of the frame of the present invention can be set according to actual needs, and the present invention does not impose any special restrictions on this. The number of frame openings is at least two. If there is only one opening, no matter what the shape of the connecting line is, a separate area will be separated from the frame, destroying the integrity of the entire dielectric and affecting the mechanical strength of the wiring layer. Regardless of the number of openings, the openings can be symmetrically distributed or asymmetrically distributed.

[0059] In this exemplary embodiment, the number of openings may be 2 to 4. If the number of openings is too large, the frame is divided into more sections, requiring more connecting wires, which is inconvenient to process.

[0060] For example, the frame 21 is rectangular, and the number of openings can be two, respectively located at the center of two opposite straight sides of the rectangular frame 21, such as Figure 6 As shown in (a), it can also be located at two opposite corners of the rectangular frame 21, such as Figure 6 As shown in (b), it can also be located at the center of two adjacent straight edges, such as Figure 6 As shown in (c), it can also be located at the center of the same straight side of the rectangular frame 21, such as Figure 6 As shown in (h). The number of openings can also be three, such as Figure 6 As shown in (f), it is located at the center or non-center position of three straight sides. The number of openings can also be four, respectively located at the center of the four straight sides of the rectangular frame 21, as shown in (f). Figure 6 As shown in (d), it can also be located at a non-center point of the four straight sides of the rectangular frame 21, such as Figure 6 As shown in (g), it can also be located at the four right angles of the rectangular frame 21, such as Figure 6 As shown in (e).

[0061] The connecting line 22 can be composed of one conductor or a combination of multiple conductors, and each conductor can be a straight line, a curve or a broken line. If it is composed of only one conductor, the connecting line has only two connection ends. If the connecting line is composed of multiple conductors, the connecting line has multiple connection ends, and the multiple conductors can be symmetrically arranged or asymmetrically arranged. In addition, the connecting line can also be composed of a conductor and other solid conductors, for example, a solid circular conductor in the center, and several conductors are connected to the periphery of the circular conductor. The present invention will not go into details one by one. The thickness of the connecting line of the present invention can be set according to actual needs, and the present invention does not impose any special restrictions on this. No matter how many conductors the connecting line is composed of, or how many connection ends it has, it is a whole, rather than a combination of scattered, unconnected lines.

[0062] In some exemplary embodiments of the present invention, the connecting wires include multiple linear conductors that touch or cross each other. Using linear conductors for wiring can reduce resistance and maximize the area of ​​dielectric material 1, thereby improving interlayer adhesion and mechanical strength.

[0063] In an exemplary embodiment of the present invention, the number of wires is 1 to 3. If the number of wires is too large, the frame requires more sections, that is, more openings, which is inconvenient to process. Figure 7 As shown, the connection line 22 can be composed of one, two or three linear conductors that cross or touch each other. Figure 7As shown in (I), the frame 21 has an opening in the center of each of the four straight sides, which is divided into four sections. The connecting line 22 is composed of three conductors, two of which are symmetrically arranged broken lines, each connecting two sections, and the third conductor is a straight line, connecting the two broken lines to form a conductor. Or as Figure 7 As shown in (II), the frame 21 has an opening at each of the four right angles, which is divided into four sections, and the connecting line 22 is formed by two crossed wires. Figure 7 As shown in (III), the frame 21 has two openings on a straight side, which is divided into two sections, and the connecting line 22 is a curve connecting the two sections. Figure 7 As shown in (IV), the frame 21 has an opening at each of the four right angles, dividing the frame 21 into four sections. The connecting wire 22 is composed of three straight wires. The three wires form an H-shape, with two wires on either side connecting the two sections respectively, and the third wire connecting the two wires on either side. In other exemplary embodiments, the connecting wire 22 can also be composed of more wires, which are not listed here one by one.

[0064] It should be noted that each section of the frame of the present invention needs to be connected to the connection end of any connecting wire, and each internal area needs to be connected to any opening to ensure the integrity of the wire layer and the dielectric layer.

[0065] In an exemplary embodiment of the present invention, Figure 5 As shown, the frame 21 is rectangular, with four openings located at its four right angles. The connecting wires 22 comprise two straight conductors that intersect perpendicularly, with each end of the wire connected to the midpoint of the frame 21, forming a cross. This creates a symmetrical structure for the entire conductor layer. This structure ensures sufficient current flow to the bonding pads and provides the most reliable interlayer bonding and mechanical strength to resist the upward pull of the package when the bonding wires are pulled.

[0066] In another exemplary embodiment of the present invention, Figure 8 As shown, frame 21 is rectangular, with four openings located at the centers of its four edges. Connecting wires 22 comprise two straight conductors that intersect, with each end of the conductor connected to opposite right-angled vertices of frame 21, forming an X-shaped structure. This creates a symmetrical structure for the entire conductor layer. Similar to a cross-shaped structure, this structure provides sufficient current flow to the bonding pads and offers the most reliable interlayer bonding and mechanical strength to resist the upward pull of the package when the bonding wires are pulled.

[0067] In another exemplary embodiment of the present invention, Figure 9As shown, the frame 21 is rectangular, with four openings located at the centers of its four edges. The connecting wires 22 comprise three straight conductors, two of which connect two segments on the same side, and the third connects the midpoints of the other two, forming an H-shaped structure. This creates a symmetrical structure for the entire conductor layer. This structure, similar to a cross-shaped structure, provides sufficient current flow to the bonding pads and offers the most reliable interlayer bonding and mechanical strength to resist the upward pull of the package when the bonding wires are pulled.

[0068] In an exemplary embodiment of the present invention, the wiring layer further includes a via 3, such as Figure 5 As shown, vias 3 are embedded in the dielectric and electrically connected to the conductor layer, and are used to connect the conductor layer to the pad metal layer. The pad metal layer is usually located above the wiring layer. Vias 3 play a role of connection and conduction, and are used to form an electrical connection between the conductor layer and the pad metal layer. They can be set on only one side of the conductor layer. The material of the vias can be the same as or different from the material of the conductor layer. The number, spacing, aperture, depth, etc. of the vias can be set as needed, and the present invention does not specifically limit this. Of course, the conductor layer and the pad metal layer can also be connected in other ways.

[0069] In an exemplary embodiment of the present invention, the wiring layer further includes a plurality of conductive layers for providing more structures containing conductive materials to facilitate further arrangement or optimization of the wires. The number of conductive layers can be one layer or multiple layers, which are stacked on the side of the wire layer away from the pad metal layer. Several conductive layers are electrically connected to each other, and several conductive layers are also electrically connected to the wire layer. The electrical connection can be direct contact connection or electrical connection through vias. The structure of the conductive layer can be the same as or different from that of the wire layer, and the structures between several conductive layers can be the same or different, and the present invention does not specifically limit this.

[0070] The embodiment of the present invention also provides a method for preparing the above wiring layer structure, such as Figure 10 Shown, including:

[0071] Step 110 , forming a first dielectric layer 11 , and forming a wire layer in the first dielectric layer.

[0072] Furthermore, in step 110, forming a conductive line layer in the first dielectric layer may include:

[0073] Step 111, according to the structure of the conductor layer, a photoresist 6 is coated on the first dielectric layer 11. The photoresist can be a positive or negative photoresist. Taking the positive photoresist as an example, after exposure, development, photolithography, etching, an opening is formed on the photoresist so that the shape of the photoresist opening is consistent with the design shape of the conductor layer, such as Figure 11 shown.

[0074] Step 112, using another etching solution to remove the opening portion not covered and protected by the photoresist to form a groove, so as to achieve the purpose of transferring the pattern on the photoresist to its underlying material, such as peeling. Figure 12 shown.

[0075] Step 113, depositing a conductive material in the groove by physical vapor deposition or electroplating, and then polishing the surface by chemical mechanical polishing to form a conductor layer. Figure 13 shown.

[0076] In an exemplary embodiment, the wiring layer structure further includes a via hole, and the preparation method further includes:

[0077] In step 210 , a second dielectric layer 12 is formed on the first dielectric layer 11 to cover the first dielectric layer, and a via hole electrically connected to the wire layer is formed in the second dielectric layer 12 .

[0078] Furthermore, forming a via hole electrically connected to the wire layer in the second dielectric layer is similar to forming the wire layer, and may include:

[0079] Step 211, according to the structure of the wire layer, apply photoresist on the first dielectric layer where the wire layer has been formed. Taking positive resist as an example, after exposure, development, photolithography, and etching, an opening is formed on the photoresist so that the shape of the photoresist opening is consistent with the designed shape of the via.

[0080] In step 212, another etching solution is used to remove the opening portion not covered and protected by the photoresist to form a through hole.

[0081] Step 213, depositing a conductive material in the through hole, the deposition method can be physical vapor deposition or electroplating, and then grinding the surface by chemical mechanical polishing process to form a via hole, and the bottom of the via hole is electrically connected to the conductor layer, such as Figure 14 shown.

[0082] The above embodiment is only an example, and the description of the steps is only an embodiment, not a limitation of the steps of the preparation method of the present invention. The present invention can also form a via hole in one dielectric layer first, and then form a conductor layer in the other dielectric layer.

[0083] The embodiment of the present invention further provides a pad structure, such as Figure 15 As shown, the pad structure includes the wiring layer 4 in the above embodiment, and also includes a pad metal layer 5, which is provided on the wiring layer 4 and is electrically connected to the wiring layer 4. Since the structure of the wiring layer is more solid, the pad of the present invention also has good mechanical strength and can withstand the force applied when the package lead bonding pulls the bonding wire.

[0084] The soldering pad of the present invention can be used for the installation of various electronic components. The shape of the soldering pad can be circular, square, octagonal, etc., and the packaging method can be wire bonding, pin type, or surface mount type. Correspondingly, the shape of the electronic component can also be rectangular, circular, diamond-shaped, etc. The soldering pad of the present invention can also be used for a variety of circuit board structures, which are not listed here one by one. The metal layer of the soldering pad is used for bonding with the external lead. In order to facilitate the formation of electrical connection, it can be a whole piece of conductive material, and its material can be one or more of copper, aluminum, tungsten, or other conductive materials.

[0085] In an exemplary embodiment of the present invention, the pad metal layer 5 is formed by depositing metal material on the wiring layer, such as Figure 15 The conductive line layer 2 and the pad metal layer 5 in the pad wiring layer 4 are electrically connected through the via 3 .

[0086] In an exemplary embodiment of the present invention, the pad structure may further include a protective layer 7 located above and around the pad metal layer 5. Figure 16 The protective layer 7 is also made of insulating material, such as polyimide, and has an opening in the center to expose the pad metal layer 5 for electrical connection with other external structures.

[0087] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.

[0088] The terms "a," "an," "the," "said," and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "comprising" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.

[0089] Those skilled in the art will readily appreciate other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the invention being indicated by the appended claims.

Claims

1. A wiring layer structure, characterized in that: The wiring layer structure is a wiring layer structure of a pad structure, including: dielectrics; a conductor layer, embedded in the dielectric, comprising a frame and connecting wires; the frame comprising at least two openings, the openings dividing the frame into a plurality of sections; the connecting wires being located within the frame and having a plurality of connection ends connected to the frame, and the connecting wires dividing the interior of the frame into a plurality of regions; wherein each of the sections is connected to the connection end of any of the connecting wires, and each of the regions is in communication with any of the openings; The dielectric and the entire conductive line layer are integral structures, and the dielectric is not cut off by the conductive line layer; The connecting line includes a plurality of linear conducting wires, and the plurality of conducting wires are in contact with or cross each other.

2. The wiring layer structure according to claim 1, wherein: The plurality of conductive wires are arranged symmetrically or asymmetrically.

3. The wiring layer structure according to claim 2, wherein: The number of the wires is 1 to 3.

4. The wiring layer structure according to claim 1, wherein: The openings are symmetrically or asymmetrically distributed on the frame.

5. The wiring layer structure according to claim 4, wherein: The number of the openings is 2 to 4.

6. The wiring layer structure according to claim 4, wherein: The frame is rectangular, the number of the openings is four, and the connecting line includes two wires; wherein, The four openings are respectively located at four right angles of the frame, the two wires cross each other vertically, and two ends of any wire are respectively connected to the midpoint of the frame of the frame.

7. The wiring layer structure according to claim 4, characterized in that The frame is rectangular, the number of the openings is four, and the connecting line includes two wires; wherein, The four openings are respectively located at the centers of the four borders of the frame body, the two wires intersect, and two ends of any wire are respectively connected to opposite right-angle vertices of the frame body.

8. The wiring layer structure according to claim 4, wherein: The frame is rectangular, the number of the openings is four, and the connecting line includes three conductors; wherein, The four openings are respectively located at the centers of the four frames of the frame body, wherein two of the wires are respectively connected to the sections of two frames on the same side, and the third wire is connected to the midpoints of the other two wires.

9. The wiring layer structure according to claim 1, wherein: The wire layer is located on one side of the pad metal layer, and the wiring layer further includes: A via is embedded in the dielectric and electrically connected to the wire layer, and is used to connect the wire layer to the pad metal layer.

10. The wiring layer structure according to claim 9, wherein: The wiring layer further includes: A plurality of conductive layers are located on a side of the wire layer away from the pad metal layer; the plurality of conductive layers are electrically connected to each other, and the plurality of conductive layers are electrically connected to the wire layer.

11. The wiring layer structure according to claim 1, wherein: The material of the conductor layer includes one or more of copper, aluminum, and tungsten.

12. A method for preparing a wiring layer structure, characterized in that: The wiring layer structure is a wiring layer structure of a pad structure, and the preparation method includes: A first dielectric layer is formed, and a wire layer is formed within the first dielectric layer, wherein the wire layer includes a frame and connecting wires, the frame includes at least two openings, the connecting wires are located within the frame and have multiple connection ends connected to the frame, and the connecting wires divide the interior of the frame into multiple areas, each of the areas being connected to any of the openings; the first dielectric and the entire wire layer are integral structures, and the first dielectric is not cut off by the wire layer; the connecting wires include multiple linear wires, and the multiple wires are in contact with or cross each other.

13. The method for preparing a wiring layer structure according to claim 12, wherein: Also includes: A second dielectric layer covering the first dielectric layer is formed on the first dielectric layer, and a via hole electrically connected to the wire layer is formed in the second dielectric layer.

14. The method for preparing a wiring layer structure according to claim 13, wherein: Forming a conductive line layer in the first dielectric layer or forming a via hole in the second dielectric layer includes: Coating photoresist on the corresponding dielectric layer, exposing, developing, etching, and stripping to form grooves or through holes; Conductive material is deposited in the groove to form the conductor layer; and conductive material is deposited in the through hole to form the via hole.

15. A pad structure, characterized in that: include: The wiring layer structure according to any one of claims 1 to 11; The pad metal layer is disposed on the wiring layer structure and is electrically connected to the wiring layer structure.

16. The pad structure according to claim 15, wherein: The wire layer and the pad metal layer of the wiring layer structure are electrically connected through vias.

17. The pad structure according to claim 15 or 16, characterized in that: Also includes: The protective layer covers the pad metal layer, and the protective layer has an opening to expose the pad metal layer.

Images