E-band duplexer implemented using high-order modes

Abstract

The embodiment of the present invention discloses an E‑band duplexer implemented by high-order modes, belonging to the field of communication technology. The E‑band duplexer includes: a cover plate and a cavity, wherein a duplexer body is arranged in the cavity; the duplexer body includes a first port, a common port, and a second port, wherein the frequency of the signal transmitted by the second port is higher than the frequency of the signal transmitted by the first port; the resonant cavity arranged between the first port and the common port is a high-order mode resonant cavity, and the resonant cavity arranged between the common port and the second port is a high-order mode resonant cavity. The embodiment of the present invention can significantly reduce the processing accuracy of the E‑band duplexer and improve the yield; the cover plate and the cavity do not need to be silver-plated or welded, which can reduce the cost without affecting the performance of the E‑band duplexer, and can also avoid processing two symmetrical cavities, thereby reducing the production cost and difficulty.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of communication technology, and in particular to an E-band duplexer implemented by using a high-order mode. Background Art

[0002] E-band has a high operating frequency, a wide frequency band, and abundant spectrum resources, and is a research hotspot for 5G communications. The development of E-band 5G communication base stations is inseparable from high-performance E-band duplexers operating in this frequency band.

[0003] In the related art, the TE10 mode can be used to implement the E-band duplexer. Since the operating frequency of the E-band duplexer implemented by the TE10 mode is 80 GHz, the frequency is very high, the size is very small, and it is almost impossible to debug, so the precision requirements of the E-band duplexer are very high. In addition, if the E-band duplexer is cut from the H surface, it must be welded and silver-plated; if the E-band duplexer is cut from the E surface, it does not need to be welded, but two symmetrical cavities need to be processed.

[0004] Since the precision requirements for implementing E-band duplexers using TE10 mode are very high, the yield of E-band duplexers is relatively low. In addition, if silver plating is required, the cost will increase, and the thickness of the silver plating will affect the performance of the E-band duplexer; if two symmetrical cavities need to be processed, the processing cost will double. Summary of the invention

[0005] The embodiment of the present invention provides an E-band duplexer implemented by high-order modes, which is used to solve the problems in the prior art. The technical solution is as follows:

[0006] On the one hand, an E-band duplexer implemented using a high-order mode is provided, the E-band duplexer comprising:

[0007] A cover plate and a cavity, wherein a duplexer body is arranged in the cavity;

[0008] The duplexer body comprises a first port, a common port and a second port, wherein the frequency of the signal transmitted by the second port is higher than the frequency of the signal transmitted by the first port;

[0009] The resonant cavity arranged between the first port and the common port is a high-order mode resonant cavity, and the resonant cavity arranged between the common port and the second port is a high-order mode resonant cavity.

[0010] In a possible implementation, all resonant cavities are secondary mode resonant cavities; or, all resonant cavities are tertiary mode resonant cavities; or, some resonant cavities are secondary mode resonant cavities and the remaining resonant cavities are tertiary mode resonant cavities.

[0011] In a possible implementation manner, a zero cavity structure is provided on a target resonant cavity between the first port and the common port, and a zero cavity structure is provided on a target resonant cavity between the second port and the common port.

[0012] In a possible implementation manner, the zero cavity structure is a protruding structure located on an upper surface of the target resonant cavity.

[0013] In a possible implementation, if the target resonant cavity provided with the zero cavity structure is a secondary mode resonant cavity, the zero cavity structure is arranged at an edge position of the target resonant cavity; if the target resonant cavity provided with the zero cavity structure is a third mode resonant cavity, the zero cavity structure is arranged at a middle position of the target resonant cavity.

[0014] In a possible implementation, if the zero cavity structure is disposed on a target resonant cavity between the first port and the common port, the size of the zero cavity structure is positively correlated with the size of the first distance, and the first distance is the distance between the target resonant cavity and the common port.

[0015] In a possible implementation, if the zero cavity structure is disposed on a target resonant cavity between the second port and the common port, the size of the zero cavity structure is positively correlated with the size of the second distance, and the second distance is the distance between the target resonant cavity and the second port.

[0016] In a possible implementation manner, a resonator group located between the first port and the common port and adjacent to the common port is used to eliminate parasitic resonance, and the resonator group includes one resonator or a plurality of adjacent resonators.

[0017] In a possible implementation, the tops of the partition walls of the coupling windows of adjacent resonant cavities are not in contact with the cover plate, and the adjacent resonant cavities are coupled via a coupling gap between the tops of the partition walls and the cover plate.

[0018] In a possible implementation manner, the cover plate and the cavity are fixed by screws.

[0019] The beneficial effects of the technical solution provided by the embodiment of the present invention include at least:

[0020] Since the duplexer body includes a first port, a common port, and a second port, the resonant cavity arranged between the first port and the common port is a high-order mode resonant cavity, and the resonant cavity arranged between the common port and the second port is a high-order mode resonant cavity, and the size of the resonant cavity realized by the high-order mode is more than twice the size of the conventional resonant cavity, the processing accuracy of the E-band duplexer can be significantly reduced and the yield rate can be improved. In addition, based on the electric field distribution method of the high-order mode, the leakage of the high-order mode resonant cavity is very small, and the cover plate and the cavity do not need to be silver-plated or welded, which can reduce costs and will not affect the performance of the E-band duplexer. It can also avoid processing two symmetrical cavities, thereby reducing production costs and production difficulties. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 is a schematic diagram of an E-band duplexer implemented using a high-order mode in one embodiment of the present invention;

[0023] Figure 2 is a schematic diagram of a duplexer body in one embodiment of the present invention;

[0024] Figure 3 is an enlarged schematic diagram of a target resonant cavity in one embodiment of the present invention;

[0025] Figure 4 4 is a transmission frequency response curve diagram of the first port and the second port in one embodiment of the present invention. DETAILED DESCRIPTION

[0026] To make the objectives, technical solutions and advantages of the embodiments of the present invention more clear, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0027] Please refer to Figure 1 , which shows an E-band duplexer implemented by a high-order mode provided by an embodiment of the present invention. The E-band duplexer includes: a cover plate 110 and a cavity 120, and a duplexer body 130 is arranged in the cavity 120.

[0028] The E-band duplexer in this embodiment includes a cover plate 110 and a cavity 120, and the cover plate 110 and the cavity 120 cooperate with each other to encapsulate the duplexer body 130. The shapes of the cover plate 110 and the cavity 120 can be set as needed, and in this embodiment, the cover plate 110 and the cavity 120 are both rectangular for illustration.

[0029] The duplexer body 130 includes a first port 131, a common port 132 and a second port 133. Since the second port 133 transmits signals at a higher frequency than the first port 131, the first port 131 may be referred to as a low-end port 131 and the second port 133 may be referred to as a high-end port 133.

[0030] In this embodiment, the common port 132 is located between the first port 131 and the second port 133, and a row of resonant cavities 134 is arranged between the first port 131 and the common port 132, and a row of resonant cavities 134 is also arranged between the second port 133 and the common port 132. Among them, the resonant cavities 134 arranged between the first port 131 and the common port 132 are high-order mode resonant cavities, and the resonant cavities 134 arranged between the common port 132 and the second port 133 are high-order mode resonant cavities, and this embodiment does not limit the number of resonant cavities 134.

[0031] The higher-order mode resonant cavity is relative to the fundamental mode resonant cavity, that is, the resonant cavity with a higher order than the fundamental mode resonant cavity is called the higher-order mode resonant cavity. In this embodiment, the higher-order mode resonant cavity is taken as a secondary mode resonant cavity and a tertiary mode resonant cavity as an example for illustration.

[0032] In this embodiment, the high-order mode resonant cavity can be designed as a secondary mode resonant cavity and / or a tertiary mode resonant cavity according to the indicators and size requirements of the E-band duplexer, and three implementation methods thereof are described below.

[0033] In a first implementation, all resonant cavities 134 are second-order mode resonant cavities, that is, all resonant cavities 134 in the E-band duplexer are second-order mode resonant cavities.

[0034] In the second implementation, all the resonant cavities 134 are third-order mode resonant cavities, that is, all the resonant cavities 134 in the E-band duplexer are third-order mode resonant cavities.

[0035] In the third implementation, part of the resonant cavities 134 are secondary mode resonant cavities, and the remaining resonant cavities 134 are tertiary mode resonant cavities. That is, part of the resonant cavities in the E-band duplexer are secondary mode resonant cavities 134, and all the remaining resonant cavities 134 are tertiary mode resonant cavities.

[0036] For example, the target resonant cavity 134 in the E-band duplexer is a third-order mode resonant cavity, the non-target resonant cavity 134 is a second-order mode resonant cavity, the target resonant cavity 134 is a resonant cavity 134 provided with a zero cavity structure 135, and the non-target resonant cavity 134 is a resonant cavity 134 not provided with a zero cavity structure 135. Please refer to Figure 2 , Figure 2 The two last-stage resonant cavities 134 in the embodiment are third-order resonant cavities, wherein one last-stage resonant cavity 134 is a resonant cavity 134 closest to the first port 131, that is, Figure 2 The leftmost resonant cavity 134; the other last resonant cavity 134 is the resonant cavity 134 closest to the second port 133, that is, Figure 2 The rightmost resonant cavity 134.

[0037] The zero cavity structure 135 is a protruding structure located on the upper surface of the target resonant cavity 134. Figure 3 The protruding structure is used to generate an out-of-band transmission zero point. One or more zero cavity structures 135 may be provided in the E-band duplexer to realize the transmission zero point.

[0038] In one implementation, a zero cavity structure 135 is disposed on a target resonant cavity 134 between the first port 131 and the common port 132 , and a zero cavity structure 135 is disposed on a target resonant cavity 134 between the second port 133 and the common port 132 .

[0039] In this embodiment, the position of the zero cavity structure 135 on the target resonant cavity 134 is related to the mode number. If the target resonant cavity 134 is a secondary mode resonant cavity, the zero cavity structure 135 needs to be placed at the edge of the target resonant cavity 134 (it cannot be placed in the middle of the target resonant cavity 134, and the specific placement position is related to the electric field distribution of the resonant frequency mode inside the resonant cavity 134), that is, if the target resonant cavity 134 provided with the zero cavity structure 135 is a secondary mode resonant cavity 134, the zero cavity structure 135 is arranged at the edge of the target resonant cavity 134. If the target resonant cavity 134 is a third-order mode resonant cavity, because the third-order mode resonant cavity has an electric field energy distribution in the middle of the resonant cavity 134, the zero cavity structure 135 can be placed in the middle of the target resonant cavity 134 to generate a transmission zero point. That is, if the target resonant cavity 134 provided with the zero cavity structure 135 is a third-order mode resonant cavity, the zero cavity structure 135 is arranged in the middle of the target resonant cavity 134.

[0040] In this embodiment, the resonant frequency of the null cavity structure 135 can also be changed by adjusting the size of the null cavity structure 135, thereby changing the position of the transmission zero point. Specifically, if the null cavity structure 135 is disposed on a target resonant cavity 134 between the first port 131 and the common port 132, the size of the null cavity structure 135 is positively correlated with the size of the first distance, which is the distance between the target resonant cavity 134 and the common port 132. If the null cavity structure 135 is disposed on a target resonant cavity 134 between the second port 133 and the common port 132, the size of the null cavity structure 135 is positively correlated with the size of the second distance, which is the distance between the target resonant cavity 134 and the second port 133.

[0041] In summary, Figure 2 In the duplexer body 130 shown, if the size of the null cavity structure 135 is increased, the target resonant cavity 134 of the null cavity structure 135 is moved leftward; if the size of the null cavity structure 135 is reduced, the target resonant cavity 134 of the null cavity structure 135 is moved rightward.

[0042] Since the transmission zero point can be realized by using the zero cavity structure 135, the out-of-band suppression has a better performance. Only 6 resonant cavities are needed to achieve the suppression requirement that the original 8 resonant cavities can achieve. Therefore, the E-band duplexer has better insertion loss and group delay performance.

[0043] In this embodiment, the resonator group located between the first port 131 and the common port 132 and adjacent to the common port 132 is used to eliminate parasitic resonance. The resonator group includes a resonator 134 or a plurality of adjacent resonators 134. Figure 2 In the example, the resonator group includes two marked resonators 134. Among them, all resonators 134 in the resonator group can eliminate the parasitic resonance existing in the passband of the second port 133 by reducing the size in the wide side direction. That is, the width of the resonator 134 in the resonator group is smaller than the width of the remaining resonators 134.

[0044] In this embodiment, the partition wall tops 136 of the coupling windows of adjacent resonant cavities 134 do not contact the cover plate 110 , and the adjacent resonant cavities 134 are coupled via the coupling gap between the partition wall tops 136 and the cover plate 110 .

[0045] It should be noted that the cover plate 110 and the cavity 120 can be fixed by screws. Since the partition wall top 136 of the direct coupling window of the adjacent resonant cavities 134 does not contact the cover plate 110, and the adjacent resonant cavities 134 are coupled through the coupling gap between the partition wall top 136 and the cover plate 110, when the cover plate 110 and the cavity 120 are not welded, the leakage between the adjacent resonant cavities 134 can be ignored. In addition, based on the electric field distribution of the high-order mode, the leakage of the high-order mode resonant cavity is very small, so the cover plate 110 and the cavity 120 do not need to be silver-plated or welded, which can reduce the surface cost of the E-band duplexer and avoid the dimensional changes caused by silver plating, thereby improving the performance of the E-band duplexer.

[0046] Please refer to Figure 4 , Figure 4 FIG. 4 shows a transmission frequency response curve of the first port 131 and the second port 133 of the E-band duplexer, and FIG. Figure 4 The two transmission zero points at mark 1 and mark 2 in FIG. 1 are generated due to the resonant frequency of the zero cavity structure 135 .

[0047] In summary, the E-band duplexer provided in this embodiment, since the duplexer body includes a first port, a common port and a second port, the resonant cavity arranged between the first port and the common port is a high-order mode resonant cavity, and the resonant cavity arranged between the common port and the second port is a high-order mode resonant cavity, and the size of the resonant cavity realized by the high-order mode is more than twice the size of the conventional resonant cavity, it can significantly reduce the processing accuracy of the E-band duplexer and improve the yield. In addition, based on the electric field distribution method of the high-order mode, the leakage of the high-order mode resonant cavity is very small, and the cover plate and the cavity do not need to be silver-plated or welded, which can reduce costs and will not affect the performance of the E-band duplexer. It can also avoid processing two symmetrical cavities, thereby reducing production costs and production difficulties.

[0048] Since the transmission zero point can be achieved by using a zero-cavity structure, the out-of-band suppression has better performance. Only 6 resonant cavities are needed to achieve the suppression requirements that originally required 8 resonant cavities. Therefore, the E-band duplexer has better insertion loss and group delay performance.

[0049] Those skilled in the art will appreciate that all or part of the above embodiments may be optimized and determined by electromagnetic simulation software such as HFSS (High Frequency Structure Simulator), CST (Computer Simulation Technology), and Uwave.

[0050] The above description is not intended to limit the embodiments of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present invention should be included in the protection scope of the embodiments of the present invention.

Claims

1. An E-band duplexer implemented using a high-order mode, characterized in that: The E-band duplexer comprises: a cover plate and a cavity, wherein a duplexer body is arranged in the cavity, the cover plate and the cavity are fixed by screws, and the cover plate and the cavity are not silver-plated or welded; The duplexer body comprises a first port, a common port and a second port, wherein the frequency of the signal transmitted by the second port is higher than the frequency of the signal transmitted by the first port; The resonant cavity arranged between the first port and the common port is a high-order mode resonant cavity, and the resonant cavity arranged between the common port and the second port is a high-order mode resonant cavity; A resonator group located between the first port and the common port and adjacent to the common port is used to eliminate parasitic resonance, wherein the resonator group includes one resonator or a plurality of adjacent resonators, and a width of a resonator in the resonator group is smaller than a width of other resonators; A zero cavity structure is provided on a target resonant cavity between the first port and the common port, and a zero cavity structure is provided on a target resonant cavity between the second port and the common port; If the null cavity structure is disposed on a target resonant cavity between the first port and the common port, the size of the null cavity structure is positively correlated with the size of the first distance, where the first distance is the distance between the target resonant cavity and the common port; If the null cavity structure is disposed on a target resonant cavity between the second port and the common port, the size of the null cavity structure is positively correlated with the size of the second distance, and the second distance is the distance between the target resonant cavity and the second port.

2. The E-band duplexer according to claim 1, characterized in that: All resonant cavities are second-order mode resonant cavities; or, All resonators are third-order mode resonators; or, Part of the resonant cavity is a secondary mode resonant cavity, and the remaining resonant cavity is a tertiary mode resonant cavity.

3. The E-band duplexer according to claim 1, characterized in that: The zero cavity structure is a protruding structure located on the upper surface of the target resonant cavity.

4. The E-band duplexer according to claim 1, characterized in that: If the target resonant cavity provided with the zero cavity structure is a secondary mode resonant cavity, the zero cavity structure is provided at an edge position of the target resonant cavity; If the target resonant cavity provided with the null cavity structure is a third-order mode resonant cavity, the null cavity structure is provided at a middle position of the target resonant cavity.

5. The E-band duplexer according to claim 1, characterized in that: The top of the partition wall of the coupling window of the adjacent resonant cavities is not in contact with the cover plate, and the adjacent resonant cavities are coupled via the coupling gap between the top of the partition wall and the cover plate.

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