A MEMS 5G communication radio frequency antenna and its manufacturing process

Abstract

A MEMS 5G communication radio frequency antenna includes a cap wafer, a bonding interface, a substrate wafer, a micro-antenna, a micro-antenna anchor point, an intermediate wafer, a thin film filter, and a vacuum cavity; the substrate wafer provides a base and an external integrated circuit for the micro-antenna; the micro-antenna anchor point is the contact portion between the micro-antenna and the substrate wafer; the intermediate wafer is a component of the cone side wall, and has an opening on the intermediate wafer; the thin film filter is a piezoelectric film on the substrate wafer to form a thin film filter. A manufacturing process for a MEMS 5G communication radio frequency antenna, on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers, through LIGA-lithography patterns, planar electro-imprinting molding methods, and photoresist to form a metal antenna model on the semiconductor substrate plane. The advantages of the present invention: using micro-mechanical design and technology from two aspects of antenna manufacturing and antenna fragility protection, the antenna protection material and structure will not cause signal attenuation, and the performance is stable.

Description

Technical Field

[0001] The present invention relates to the field of micro antennas, and in particular to a MEMS 5G communication radio frequency antenna and a manufacturing process thereof. Background Art

[0002] Small micromechanical independent antennas can be manufactured on integrated circuit wafers. Due to the fragility of the micro-antennas themselves, if the manufactured micro-antennas are not structurally protected, they are prone to bending, damage, or dust contamination. Summary of the invention

[0003] The purpose of the present invention is to overcome the above problems and to provide a MEMS 5G communication RF antenna and a manufacturing process.

[0004] The present invention provides a MEMS 5G communication radio frequency antenna, characterized in that: the MEMS 5G communication radio frequency antenna includes a cap wafer 1, a bonding interface 2, a substrate wafer 3, a micro-antenna 4, a micro-antenna anchor point 5, a metal pad 6, a metal bump 7, an intermediate wafer 8, an electrical connection point 9, a metal sidewall 10, a through silicon via connection 11, a thin film filter 12, and a vacuum cavity 13;

[0005] Among them: the cap wafer 1 serves as a protective structure for the micro-antenna, the bonding interface 2 is the interface layer of the cap wafer 1, the substrate wafer 3 and the intermediate wafer 8; the substrate wafer 3 provides a base and an external integrated circuit for the micro-antenna; the micro-antenna anchor point 5 is the contact part between the micro-antenna 4 and the substrate wafer 3; the metal pad 6 is the metal connecting wire of the micro-antenna 4, which is used to connect the micro-antenna 4 and other devices; the metal bump 7 is a through hole on the substrate wafer 3 and filled with metal to form a raised structure, which serves as an electrical contact point for the package; the intermediate wafer 8 is a component of the cone side wall, and has an opening on the intermediate wafer 8; the electrical connection point 9 connects the metal side wall 10, the micro-antenna 4 and the metal bump 7; the metal side wall 10 is arranged on the side wall of the opening of the intermediate wafer 8; the silicon through hole connection 11 is in the silicon through hole on the substrate wafer, which serves as an electrical connection channel between the micro-antenna and external devices; the thin film filter 12 is a piezoelectric film on the substrate wafer, forming a thin film filter; the vacuum cavity 13 is the vacuum cavity of the thin film filter 12, which is a component of the thin film filter 12.

[0006] The micro-antenna 4 is a single micro-antenna, a multi-micro-antenna array structure or an integrated micro-antenna structure.

[0007] The opening of the intermediate wafer 8 is a conical opening structure.

[0008] A manufacturing process for a MEMS 5G communication radio frequency antenna, characterized in that: the manufacturing process of the MEMS 5G communication radio frequency antenna forms a metal antenna model on a semiconductor substrate plane through photoresist on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through LIGA-photolithography patterns and a planar electroprinting mold method; and can also manufacture metal micro-antennas on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through 3D printing technology. The micro-antenna can be a normal planar antenna or a special conical antenna. The manufactured micro-antenna can be connected to the filter and radio frequency switch of the radio frequency front end through the silicon through-hole process; the micro-antenna forms a cavity through the bonding process of the substrate wafer and the cover wafer, and the micro-antenna is located in the cavity, which can not only protect the micro-antenna, but also deposit metal on the side wall of the cavity to increase the signal reception efficiency.

[0009] The cap wafer 1 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials, and serves as a protective structure for the micro-antenna; the bonding interface 2 is the interface layer between the cap wafer 1, the substrate wafer 3, and the intermediate wafer 8 in the bonding process, and is made of metal, polysilicon, silicon, and glass materials; the substrate wafer 3 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials; the micro-antenna 4 is made of metal and is made using the LIGA process or 3D printing plan. It can be designed with different planar shapes according to the signal frequency, and can also be made into a conical shape by 3D printing metal.

[0010] The metal pad 6 is prepared by physical vapor deposition technology, and the metal bump 7 is formed by etching a through hole on the substrate wafer 3 by photolithography, etching, electroplating and other processes, and filling it with metal, and is used as an electrical contact point for packaging; the intermediate wafer 8 is composed of silicon, glass, III-V semiconductors, GaAs, GaN and other materials, and is the main component of the cone side wall. Through photolithography, etching, thinning and other processes, a conical opening is made in the intermediate wafer 8 to enhance the signal.

[0011] The metal sidewall 10 utilizes physical vapor deposition technology to deposit a metal film on the sidewall of the conical opening of the middle wafer 8, thereby enhancing the signal; the through silicon via connection 11 utilizes photolithography and etching processes to make a through silicon via on the substrate wafer, and in the through silicon via, physical vapor deposition and electroplating processes are utilized to deposit metal on the sidewall of the through silicon via to serve as an electrical connection line, serving as an electrical connection channel between the micro-antenna and external devices such as filters.

[0012] The thin film filter 12 is formed by depositing a piezoelectric film on a substrate wafer by chemical vapor deposition or physical vapor deposition technology to process the received signal for the antenna to form an integrated micro-antenna; the vacuum cavity 13 of the thin film filter 12 is a component of the thin film filter 12 and can make the thin film filter 12 vibrate.

[0013] Advantages of the present invention:

[0014] The MEMS 5G communication radio frequency antenna and manufacturing process described in the present invention utilizes micro-mechanical design and technology from two aspects: antenna manufacturing and antenna fragility protection, to complete and be used in combination with thin film filters and radio frequency switches. The antenna protection material and structural design are targeted at silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers, will not cause signal attenuation, and has stable performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The present invention is further described in detail below in conjunction with the accompanying drawings and embodiments:

[0016] Figure 1 is a cross-sectional view of a single micro-antenna;

[0017] Figure 2 This is a cross-sectional view of a single conical micro-antenna;

[0018] Figure 3 It is a cross-sectional view of a micro-antenna with a conical metal side wall;

[0019] Figure 4 is a cross-sectional view of a multi-micro antenna array;

[0020] Figure 5 This is a cross-sectional view of the integrated micro-antenna. DETAILED DESCRIPTION

[0021] Example 1

[0022] The present invention provides a MEMS 5G communication radio frequency antenna, characterized in that: the MEMS 5G communication radio frequency antenna includes a cap wafer 1, a bonding interface 2, a substrate wafer 3, a micro-antenna 4, a micro-antenna anchor point 5, a metal pad 6, a metal bump 7, an intermediate wafer 8, an electrical connection point 9, a metal sidewall 10, a through silicon via connection 11, a thin film filter 12, and a vacuum cavity 13;

[0023] Among them: the cap wafer 1 serves as a protective structure for the micro-antenna, the bonding interface 2 is the interface layer of the cap wafer 1, the substrate wafer 3 and the intermediate wafer 8; the substrate wafer 3 provides a base and an external integrated circuit for the micro-antenna; the micro-antenna anchor point 5 is the contact part between the micro-antenna 4 and the substrate wafer 3; the metal pad 6 is the metal connecting wire of the micro-antenna 4, which is used to connect the micro-antenna 4 and other devices; the metal bump 7 is a through hole on the substrate wafer 3 and filled with metal to form a raised structure, which serves as an electrical contact point for the package; the intermediate wafer 8 is a component of the cone side wall, and has an opening on the intermediate wafer 8; the electrical connection point 9 connects the metal side wall 10, the micro-antenna 4 and the metal bump 7; the metal side wall 10 is arranged on the side wall of the opening of the intermediate wafer 8; the silicon through hole connection 11 is in the silicon through hole on the substrate wafer, which serves as an electrical connection channel between the micro-antenna and external devices; the thin film filter 12 is a piezoelectric film on the substrate wafer, forming a thin film filter; the vacuum cavity 13 is the vacuum cavity of the thin film filter 12, which is a component of the thin film filter 12.

[0024] The micro-antenna 4 is a single micro-antenna, a multi-micro-antenna array structure or an integrated micro-antenna structure.

[0025] The opening of the intermediate wafer 8 is a conical opening structure.

[0026] A manufacturing process for a MEMS 5G communication radio frequency antenna, characterized in that: the manufacturing process of the MEMS 5G communication radio frequency antenna forms a metal antenna model on a semiconductor substrate plane through photoresist on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through LIGA-photolithography patterns and a planar electroprinting mold method; and can also manufacture metal micro-antennas on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through 3D printing technology. The micro-antenna can be a normal planar antenna or a special conical antenna. The manufactured micro-antenna can be connected to the filter and radio frequency switch of the radio frequency front end through the silicon through-hole process; the micro-antenna forms a cavity through the bonding process of the substrate wafer and the cover wafer, and the micro-antenna is located in the cavity, which can not only protect the micro-antenna, but also deposit metal on the side wall of the cavity to increase the signal reception efficiency.

[0027] The cap wafer 1 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials, and serves as a protective structure for the micro-antenna; the bonding interface 2 is the interface layer between the cap wafer 1, the substrate wafer 3, and the intermediate wafer 8 in the bonding process, and is made of metal, polysilicon, silicon, and glass materials; the substrate wafer 3 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials; the micro-antenna 4 is made of metal and is made using the LIGA process or 3D printing plan. It can be designed with different planar shapes according to the signal frequency, and can also be made into a conical shape by 3D printing metal.

[0028] The metal pad 6 is prepared by physical vapor deposition technology, and the metal bump 7 is formed by etching a through hole on the substrate wafer 3 by photolithography, etching, electroplating and other processes, and filling it with metal, and is used as an electrical contact point for packaging; the intermediate wafer 8 is composed of silicon, glass, III-V semiconductors, GaAs, GaN and other materials, and is the main component of the cone side wall. Through photolithography, etching, thinning and other processes, a conical opening is made in the intermediate wafer 8 to enhance the signal.

[0029] The metal sidewall 10 utilizes physical vapor deposition technology to deposit a metal film on the sidewall of the conical opening of the middle wafer 8, thereby enhancing the signal; the through silicon via connection 11 utilizes photolithography and etching processes to make a through silicon via on the substrate wafer, and in the through silicon via, physical vapor deposition and electroplating processes are utilized to deposit metal on the sidewall of the through silicon via to serve as an electrical connection line, serving as an electrical connection channel between the micro-antenna and external devices such as filters.

[0030] The thin film filter 12 is formed by depositing a piezoelectric film on a substrate wafer by chemical vapor deposition or physical vapor deposition technology to process the received signal for the antenna to form an integrated micro-antenna; the vacuum cavity 13 of the thin film filter 12 is a component of the thin film filter 12 and can make the thin film filter 12 vibrate.

[0031] Example 2

[0032] The present invention provides a MEMS 5G communication radio frequency antenna, characterized in that: the MEMS 5G communication radio frequency antenna includes a cap wafer 1, a bonding interface 2, a substrate wafer 3, a micro-antenna 4, a micro-antenna anchor point 5, a metal pad 6, a metal bump 7, an intermediate wafer 8, an electrical connection point 9, a metal sidewall 10, a through silicon via connection 11, a thin film filter 12, and a vacuum cavity 13;

[0033] Among them: the cap wafer 1 serves as a protective structure for the micro-antenna, the bonding interface 2 is the interface layer of the cap wafer 1, the substrate wafer 3 and the intermediate wafer 8; the substrate wafer 3 provides a base and an external integrated circuit for the micro-antenna; the micro-antenna anchor point 5 is the contact part between the micro-antenna 4 and the substrate wafer 3; the metal pad 6 is the metal connecting wire of the micro-antenna 4, which is used to connect the micro-antenna 4 and other devices; the metal bump 7 is a through hole on the substrate wafer 3 and filled with metal to form a raised structure, which serves as an electrical contact point for the package; the intermediate wafer 8 is a component of the cone side wall, and has an opening on the intermediate wafer 8; the electrical connection point 9 connects the metal side wall 10, the micro-antenna 4 and the metal bump 7; the metal side wall 10 is arranged on the side wall of the opening of the intermediate wafer 8; the silicon through hole connection 11 is in the silicon through hole on the substrate wafer, which serves as an electrical connection channel between the micro-antenna and external devices; the thin film filter 12 is a piezoelectric film on the substrate wafer, forming a thin film filter; the vacuum cavity 13 is the vacuum cavity of the thin film filter 12, which is a component of the thin film filter 12.

[0034] The micro-antenna 4 is a single micro-antenna, a multi-micro-antenna array structure or an integrated micro-antenna structure.

[0035] A manufacturing process for a MEMS 5G communication radio frequency antenna, characterized in that: the manufacturing process of the MEMS 5G communication radio frequency antenna forms a metal antenna model on a semiconductor substrate plane through photoresist on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through LIGA-photolithography patterns and a planar electroprinting mold method; and can also manufacture metal micro-antennas on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through 3D printing technology. The micro-antenna can be a normal planar antenna or a special conical antenna. The manufactured micro-antenna can be connected to the filter and radio frequency switch of the radio frequency front end through the silicon through-hole process; the micro-antenna forms a cavity through the bonding process of the substrate wafer and the cover wafer, and the micro-antenna is located in the cavity, which can not only protect the micro-antenna, but also deposit metal on the side wall of the cavity to increase the signal reception efficiency.

[0036] The cap wafer 1 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials, and serves as a protective structure for the micro-antenna; the bonding interface 2 is the interface layer between the cap wafer 1, the substrate wafer 3, and the intermediate wafer 8 in the bonding process, and is made of metal, polysilicon, silicon, and glass materials; the substrate wafer 3 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials; the micro-antenna 4 is made of metal and is made using the LIGA process or 3D printing plan. It can be designed with different planar shapes according to the signal frequency, and can also be made into a conical shape by 3D printing metal.

[0037] The metal pad 6 is prepared by physical vapor deposition technology, and the metal bump 7 is formed by etching a through hole on the substrate wafer 3 by photolithography, etching, electroplating and other processes, and filling it with metal, and is used as an electrical contact point for packaging; the intermediate wafer 8 is composed of silicon, glass, III-V semiconductors, GaAs, GaN and other materials, and is the main component of the cone side wall. Through photolithography, etching, thinning and other processes, a conical opening is made in the intermediate wafer 8 to enhance the signal.

[0038] The metal sidewall 10 utilizes physical vapor deposition technology to deposit a metal film on the sidewall of the conical opening of the middle wafer 8, thereby enhancing the signal; the through silicon via connection 11 utilizes photolithography and etching processes to make a through silicon via on the substrate wafer, and in the through silicon via, physical vapor deposition and electroplating processes are utilized to deposit metal on the sidewall of the through silicon via to serve as an electrical connection line, serving as an electrical connection channel between the micro-antenna and external devices such as filters.

[0039] The thin film filter 12 is formed by depositing a piezoelectric film on a substrate wafer by chemical vapor deposition or physical vapor deposition technology to process the received signal for the antenna to form an integrated micro-antenna; the vacuum cavity 13 of the thin film filter 12 is a component of the thin film filter 12 and can make the thin film filter 12 vibrate.

[0040] Example 3

[0041] The present invention provides a MEMS 5G communication radio frequency antenna, characterized in that: the MEMS 5G communication radio frequency antenna includes a cap wafer 1, a bonding interface 2, a substrate wafer 3, a micro-antenna 4, a micro-antenna anchor point 5, a metal pad 6, a metal bump 7, an intermediate wafer 8, an electrical connection point 9, a metal sidewall 10, a through silicon via connection 11, a thin film filter 12, and a vacuum cavity 13;

[0042] Among them: the cap wafer 1 serves as a protective structure for the micro-antenna, the bonding interface 2 is the interface layer of the cap wafer 1, the substrate wafer 3 and the intermediate wafer 8; the substrate wafer 3 provides a base and an external integrated circuit for the micro-antenna; the micro-antenna anchor point 5 is the contact part between the micro-antenna 4 and the substrate wafer 3; the metal pad 6 is the metal connecting wire of the micro-antenna 4, which is used to connect the micro-antenna 4 and other devices; the metal bump 7 is a through hole on the substrate wafer 3 and filled with metal to form a raised structure, which serves as an electrical contact point for the package; the intermediate wafer 8 is a component of the cone side wall, and has an opening on the intermediate wafer 8; the electrical connection point 9 connects the metal side wall 10, the micro-antenna 4 and the metal bump 7; the metal side wall 10 is arranged on the side wall of the opening of the intermediate wafer 8; the silicon through hole connection 11 is in the silicon through hole on the substrate wafer, which serves as an electrical connection channel between the micro-antenna and external devices; the thin film filter 12 is a piezoelectric film on the substrate wafer, forming a thin film filter; the vacuum cavity 13 is the vacuum cavity of the thin film filter 12, which is a component of the thin film filter 12.

[0043] A manufacturing process for a MEMS 5G communication radio frequency antenna, characterized in that: the manufacturing process of the MEMS 5G communication radio frequency antenna forms a metal antenna model on a semiconductor substrate plane through photoresist on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through LIGA-photolithography patterns and a planar electroprinting mold method; and can also manufacture metal micro-antennas on silicon, glass, III-V semiconductors, GaAs, GaN and other integrated circuit wafers through 3D printing technology. The micro-antenna can be a normal planar antenna or a special conical antenna. The manufactured micro-antenna can be connected to the filter and radio frequency switch of the radio frequency front end through the silicon through-hole process; the micro-antenna forms a cavity through the bonding process of the substrate wafer and the cover wafer, and the micro-antenna is located in the cavity, which can not only protect the micro-antenna, but also deposit metal on the side wall of the cavity to increase the signal reception efficiency.

[0044] The cap wafer 1 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials, and serves as a protective structure for the micro-antenna; the bonding interface 2 is the interface layer between the cap wafer 1, the substrate wafer 3, and the intermediate wafer 8 in the bonding process, and is made of metal, polysilicon, silicon, and glass materials; the substrate wafer 3 is made of silicon, glass, III-V semiconductor, GaAs, and GaN materials; the micro-antenna 4 is made of metal and is made using the LIGA process or 3D printing plan. It can be designed with different planar shapes according to the signal frequency, and can also be made into a conical shape by 3D printing metal.

[0045] The metal pad 6 is prepared by physical vapor deposition technology, and the metal bump 7 is formed by etching a through hole on the substrate wafer 3 by photolithography, etching, electroplating and other processes, and filling it with metal, and is used as an electrical contact point for packaging; the intermediate wafer 8 is composed of silicon, glass, III-V semiconductors, GaAs, GaN and other materials, and is the main component of the cone side wall. Through photolithography, etching, thinning and other processes, a conical opening is made in the intermediate wafer 8 to enhance the signal.

[0046] The metal sidewall 10 utilizes physical vapor deposition technology to deposit a metal film on the sidewall of the conical opening of the middle wafer 8, thereby enhancing the signal; the through silicon via connection 11 utilizes photolithography and etching processes to make a through silicon via on the substrate wafer, and in the through silicon via, physical vapor deposition and electroplating processes are utilized to deposit metal on the sidewall of the through silicon via to serve as an electrical connection line, serving as an electrical connection channel between the micro-antenna and external devices such as filters.

[0047] The thin film filter 12 is formed by depositing a piezoelectric film on a substrate wafer by chemical vapor deposition or physical vapor deposition technology to process the received signal for the antenna to form an integrated micro-antenna; the vacuum cavity 13 of the thin film filter 12 is a component of the thin film filter 12 and can make the thin film filter 12 vibrate.

Claims

1. A MEMS 5G communication radio frequency antenna, characterized in that: The MEMS 5G communication radio frequency antenna comprises a cap wafer (1), a bonding interface (2), a substrate wafer (3), a micro-antenna (4), a micro-antenna anchor point (5), a metal pad (6), a metal bump (7), an intermediate wafer (8), an electrical connection point (9), a metal sidewall (10), a through silicon via connection (11), a thin film filter (12), and a vacuum cavity (13); The cap wafer (1) serves as a protective structure for the micro-antenna, and the bonding interface (2) is an interface layer between the cap wafer (1), the substrate wafer (3) and the intermediate wafer (8); the substrate wafer (3) provides a base and an external integrated circuit for the micro-antenna; the micro-antenna anchor point (5) is the contact portion between the micro-antenna (4) and the substrate wafer (3); the metal pad (6) is a metal connection line of the micro-antenna (4) and is used to connect the micro-antenna (4) and other devices; the metal bump (7) is a through hole on the substrate wafer (3) and is filled with metal to form a raised structure, which serves as an electrical contact point for the package; an opening is provided on the intermediate wafer (8), and the opening of the intermediate wafer (8) is a conical opening structure; the electrical connection point (9) connects the metal side wall (10), the micro-antenna (4) and the substrate wafer (3); the metal pad (6) is a metal connection line of the micro-antenna (4) and is used to connect the micro-antenna (4) and other devices; the metal bump (7) is a through hole on the substrate wafer (3) and is filled with metal to form a raised structure, which serves as an electrical contact point for the package; the intermediate wafer (8) is provided with an opening, and the opening of the intermediate wafer (8) is a conical opening structure; the electrical connection point (9) connects the metal side wall (10), the micro-antenna (4) and the substrate wafer (3); the metal pad (6) is a metal connection line of the micro-antenna (4) and is used to connect the micro-antenna (4) and the substrate wafer (3); the metal bump (7) is a metal pad (10) and the substrate wafer (3); the metal bump (7) is a metal pad (10) and the substrate wafer (3); the metal pad (6) is a metal pad (10) and the substrate wafer (3); the metal pad (6) is a metal pad (10) and the substrate wafer (3); the metal pad (6) is a metal pad (10) The invention relates to a micro-antenna (4) and a metal bump (7); a metal side wall (10) is arranged on the side wall of the opening of the middle wafer (8); a through silicon via (11) is connected in the through silicon via on the substrate wafer, serving as an electrical connection channel between the micro-antenna and external devices; the thin film filter (12) is a piezoelectric film on the substrate wafer, forming a thin film filter; the vacuum cavity (13) is the vacuum cavity of the thin film filter (12), and is a component of the thin film filter (12); the micro-antenna (4) is a single micro-antenna, a multi-micro-antenna array structure or an integrated micro-antenna structure, and the micro-antenna (4) forms a cavity at the conical side wall opening of the middle wafer (8) through a substrate wafer and a cover wafer bonding process, and the micro-antenna (4) is located in the cavity.

2. A process for manufacturing a MEMS 5G communication radio frequency antenna as claimed in claim 1, characterized in that: A metal micro-antenna is manufactured on a substrate wafer by LIGA-lithography or 3D printing technology, wherein the material of the substrate wafer is selected from silicon, glass or III-V semiconductor; the manufactured micro-antenna is connected to the filter and the radio frequency switch of the radio frequency front end by a through silicon via process; the micro-antenna (4) is formed into a cavity at the conical side wall opening of the intermediate wafer (8) by a bonding process between the substrate wafer and the cover wafer, and the micro-antenna (4) is located in the cavity; the metal pad (6) is prepared by physical vapor deposition technology, and the metal bump (7) is etched into a through hole on the substrate wafer (3) by photolithography, etching and electroplating processes, and filled with metal to be used as an electrical contact point of the package; The intermediate wafer (8) is made of silicon, glass or III-V semiconductor, and is a component of the conical side wall of the intermediate wafer (8). Through photolithography, etching and thinning processes, a conical opening is made on the intermediate wafer (8) to enhance the signal. The metal side wall (10) uses physical vapor deposition technology to deposit a metal film on the side wall of the conical opening of the intermediate wafer (8) to enhance the signal. The through silicon via connection (11) uses photolithography and etching processes to make a through silicon via on the substrate wafer. In the through silicon via, a metal is deposited on the side wall of the through silicon via using physical vapor deposition and electroplating processes to serve as an electrical connection line, which serves as an electrical connection channel between the micro antenna and an external device. The thin film filter (12) deposits a piezoelectric film on a substrate wafer by chemical vapor deposition or physical vapor deposition technology to form a thin film filter, which processes the antenna receiving signal to form an integrated micro-antenna; the vacuum cavity (13) of the thin film filter (12) is a component of the thin film filter (12) and can make the thin film filter (12) vibrate.

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