Image Sensor

Abstract

An image sensor may include: a substrate, the substrate including a first surface and a second surface opposite to each other; a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices not being in direct contact with each other within the substrate; a first groove, the first groove being configured to extend from the first surface of the substrate to the interior of the substrate and extending between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices; a first support member, the first support member being within the first groove; and a first isolation layer, the first isolation layer at least partially covering two side walls of the first support member within the first groove, wherein a lower surface of the first support member is coplanar with the first surface of the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from Korean Patent Application No. 10-2019-0002612, filed on January 9, 2019, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to image sensors. Background Art

[0004] An image sensor is a device configured to convert an optical image into an electrical signal. Image sensors can be classified into charge coupled device (CCD) type image sensors and complementary metal oxide semiconductor (CMOS) type image sensors. CMOS type image sensors are referred to as "CIS" (CMOS image sensor). CIS may include a plurality of pixels arranged in two dimensions. Each pixel may include a photodiode (PD). The photodiode may play a role in converting at least a portion of the incident light into an electrical signal.

[0005] In recent years, with the development of the computer and communication industries, there has been a growing demand for image sensors with enhanced performance in various fields such as digital cameras, camcorders, personal communication systems (PCS), game devices, security cameras, medical micro cameras, robots, etc. In addition, highly integrated semiconductor devices have enabled image sensors to be highly integrated. Summary of the invention

[0006] Some example embodiments of the present disclosure provide an image sensor configured to reduce or prevent a tilting or bending phenomenon of each structure separated by an isolation region in a manufacturing process of the image sensor by providing a support member within an isolation region (e.g., deep trench isolation (DTI)) formed between adjacent photoelectric conversion devices among a plurality of photoelectric conversion devices, thereby improving the performance of the image sensor.

[0007] According to some example embodiments of the present disclosure, an image sensor may include: a substrate including a first surface and a second surface opposite to each other; a plurality of photoelectric conversion devices that are not in direct contact with each other within the substrate; a first groove configured to extend from the first surface of the substrate to the interior of the substrate and between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices; a first support member located within the first groove; and a first isolation layer that at least partially covers two sidewalls of the first support member within the first groove. A lower surface of the first support member may be coplanar with the first surface of the substrate.

[0008] According to some example embodiments of the present disclosure, an image sensor may include: a substrate including a first surface and a second surface opposite to each other; a plurality of photoelectric conversion devices within the substrate; a support member; and a first isolation layer, the first isolation layer at least partially covering two side walls of the support member within the substrate. The lower surface of the support member may be coplanar with the first surface of the substrate. The plurality of photoelectric conversion devices may include: a first photoelectric conversion device; a second photoelectric conversion device, the second photoelectric conversion device not in direct contact with the first photoelectric conversion device in a first direction; a third photoelectric conversion device, the third photoelectric conversion device not in direct contact with the first photoelectric conversion device in a second direction perpendicular to the first direction; and a fourth photoelectric conversion device, the fourth photoelectric conversion device not in direct contact with the third photoelectric conversion device in the first direction. The support member may include: a first portion, the first portion is located between the first photoelectric conversion device and the second photoelectric conversion device; and a second portion, the second portion is located between the third photoelectric conversion device and the fourth photoelectric conversion device.

[0009] According to some example embodiments of the present disclosure, an image sensor may include: a substrate including a first surface and a second surface opposite to each other; a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices not being in direct contact with each other within the substrate; a first isolation layer, the first isolation layer being located between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices and exposed from the first surface of the substrate; a second isolation layer, the second isolation layer being located on the first isolation layer within the substrate; and a support member, the support member being located within the first isolation layer and having a lower surface coplanar with the first surface of the substrate.

[0010] According to some example embodiments of the present disclosure, a method for manufacturing an image sensor may include: forming a first groove on a first surface of a substrate; forming a first filling layer in the first groove; forming a second groove passing through the first filling layer in a vertical direction of the first surface of the substrate; forming a sacrificial layer that completely fills the second groove; etching at least a portion of the sacrificial layer so that at least a portion of the second groove is not filled with the sacrificial layer; forming a supporting layer on the sacrificial layer to fill the portion of the second groove not filled by the sacrificial layer; removing the sacrificial layer from the interior of the second groove; forming a second isolation layer in the interior of the second groove; etching the first filling layer to form a first isolation layer in the first groove so that the first isolation is exposed from the same plane as the first surface of the substrate; and forming a photoelectric conversion device in the substrate on opposite sides of the first isolation layer and the second isolation layer.

[0011] The objectives that the present disclosure intends to solve are not limited to the above objectives, and other objectives not mentioned above may be clearly understood by those skilled in the art based on the description provided below. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other objects, features and advantages of the present disclosure will become more apparent to those skilled in the art by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings.

[0013] Figure 1 is a block diagram of an image sensor according to some example embodiments;

[0014] Figure 2 yes Figure 1 Equivalent circuit diagram of the sensor array;

[0015] Figure 3 is a diagram provided to explain an image sensor according to some example embodiments;

[0016] Figure 4 is along Figure 3 A cross-sectional view taken along line AA';

[0017] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 and Fig.17 is a diagram showing an intermediate stage of manufacturing provided for explaining a method for manufacturing an image sensor according to some example embodiments;

[0018] Fig.18 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0019] Fig.19 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0020] Fig. 20 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0021] Fig.21 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0022] Fig. 22is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0023] Fig.23 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0024] Fig.24 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0025] Fig.25 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments;

[0026] Fig.26 are views provided to explain an image sensor according to some example embodiments;

[0027] Fig. 27 are views provided to explain an image sensor according to some example embodiments. DETAILED DESCRIPTION

[0028] In the following, reference will be made to Figure 1 An image sensor according to some example embodiments is described.

[0029] Figure 1 is a block diagram of an image sensor according to some example embodiments.

[0030] Reference Figure 1 , an image sensor according to some example embodiments includes an active pixel sensor array 10, a timing generator 20, a row decoder 30, a row driver 40, a correlated double sampler (CDS) 50, an analog-to-digital converter (ADC) 60, a latch 70, a column decoder 80, etc. It will be understood that at least some functions of the image sensor may be implemented by an instance of a processing circuit (e.g., a central processing unit (CPU)) executing program instructions stored in a memory (e.g., a solid state drive (SSD) storage device), wherein Figure 1 The image sensor includes instances of processing circuitry and memory.

[0031] The active pixel sensor array 10 includes one or more photoelectric conversion devices and a plurality of two-dimensionally arranged unit pixels. The plurality of unit pixels may perform a function of converting an optical image into an electrical output signal.

[0032] The active pixel sensor array 10 may receive a plurality of driving signals including a row selection signal, a reset signal, a charge transfer signal, etc. from the row driver 40 and may be driven accordingly. In addition, the converted electrical output signal may be provided (e.g., generated, sent, directed, etc.) to the correlated double sampler 50 through a vertical signal line.

[0033] The timing generator 20 may provide (eg, generate, direct, transmit, etc.) timing signals and control signals to the row decoder 30 and the column decoder 80 .

[0034] The row driver 40 may provide a plurality of driving signals to the active pixel sensor array 10 to drive a plurality of unit pixels according to the decoding result of the row decoder 30. Generally, when the unit pixels are arranged in a matrix form, a driving signal may be provided to each row.

[0035] The correlated double sampler 50 may receive the output signal formed at the active pixel sensor array 10 through the vertical signal line, and hold and sample the received signal. That is, the correlated double sampler 50 may double sample a specific noise level and signal level according to the output signal, and output a difference level corresponding to the difference between the noise level and the signal level.

[0036] The analog-to-digital converter 60 may convert an analog signal corresponding to the difference level into a digital signal and output the conversion result.

[0037] The latch 70 may latch a digital signal, and may sequentially output the latched signal to the image signal processor according to a decoding result of the column decoder 80 .

[0038] In the following, reference will be made to Figure 2 An equivalent circuit diagram of a sensor array according to some example embodiments is described.

[0039] Figure 2 yes Figure 1 Equivalent circuit diagram of the sensor array.

[0040] Reference Figure 2 , the sensor array 10 may include a plurality of pixels P that may be arranged in a matrix form to construct an active pixel sensor array 10, the matrix form having "i" rows and "j" columns, where "i" and "j" may each be a separate positive integer. Each pixel P includes a photoelectric conversion device 11, a floating diffusion region 13, a charge transfer device 15, a drive device 17, a reset device 18, and a selection device 19. These functions will be described with reference to the i-th row of pixels (P(i, j), P(i, j+1), P(i, j+2), P(i, j+3), ...) as an example.

[0041] The photoelectric conversion device 11 of each pixel P can absorb incident light and accumulate charges corresponding to the light amount. For the photoelectric conversion device 11, although a photodiode is shown as an example in the drawings, a photodiode, a phototransistor, a photogate, a pinned photodiode, or a combination thereof may be applied.

[0042] The photoelectric conversion device 11 of each pixel P may be coupled to a charge transfer device 15 of the pixel P, which transfers the accumulated charges to the floating diffusion region 13 of the pixel P.

[0043] The floating diffusion region 13 of each pixel P is a region where charges are converted into voltage, and the charges may be accumulatively stored due to parasitic capacitance.

[0044] The driving device 17 (shown here as a source follower amplifier) ​​of each pixel P can amplify the potential change in the floating diffusion region 13 of the pixel P to which the accumulated charge of the photoelectric conversion device 11 of the pixel P is transferred, and output the amplified result to the output line Vout.

[0045] The reset device 18 of each pixel P may periodically reset the floating diffusion region 13 of the pixel P. The reset device 18 of each i-th row pixel P may at least partially include a MOS transistor driven by a bias voltage provided by a reset line RX(i) for providing a specific (or, alternatively, predetermined) bias voltage (i.e., a reset signal).

[0046] When the reset device 18 of the i-th row pixel P is turned on by the bias provided by the reset line RX(i), a specific (or, alternatively, predetermined) potential (e.g., the power supply voltage (VDD)) provided to the drain of the reset device 18 can be transmitted to the floating diffusion region 13.

[0047] The selection device 19 of each pixel P may perform a function of selecting pixels P to be read in row units. The selection device 19 of each i-th row pixel P may at least partially include a MOS transistor driven by a bias voltage (i.e., a row selection signal) provided by a row selection line SEL(i).

[0048] When the selection device 19 of the pixel P in the i-th row is turned on by the bias voltage provided by the row selection line SEL(i), a specific (or, optionally, predetermined) potential (for example, the power supply voltage (VDD)) provided to the drain of the selection device 19 can be transmitted to the drain region of the driving device 17 of the pixel P in the i-th row.

[0049] The transmission line TX(i) of the charge transfer device 15 that applies a bias voltage to the i-th row of pixels P, the reset line RX(i) of the reset device 18 that applies a bias voltage to the i-th row of pixels P, and the row selection line SEL(i) of the i-th row of pixels P that applies a bias voltage to the selection device 19 that applies a bias voltage to the i-th row of pixels P may extend and be arranged parallel to each other in the row direction. It will be understood that, as used herein, elements that are "parallel" to each other include elements that are parallel to each other within manufacturing tolerances and / or material tolerances.

[0050] In the following, reference will be made to Figure 3 and Figure 4 An image sensor according to some example embodiments is described.

[0051] Figure 3 2 is a diagram provided to explain an image sensor according to some example embodiments. Figure 4 is along Figure 3 A cross-sectional view taken along line AA'.

[0052] Reference Figure 3 and Figure 4 According to some example embodiments, the image sensor includes a substrate 100, one or more photoelectric conversion devices PD, an insulating layer 105, an insulating structure 110, a gate 115, a first isolation layer 120, a second isolation layer 130, a first trench passivation layer 135, a passivation layer 138, a planarization layer 140, a color filter 150, a microlens 160 and a first support member 170.

[0053] The substrate 100 includes a first surface 100 a and a second surface 100 b opposite to each other. The first surface 100 a of the substrate may be a back surface of the substrate 100 , and the second surface 100 b of the substrate may be a front surface of the substrate 100 .

[0054] For example, the substrate 100 may use a P-type or N-type bulk substrate, or may use a P-type or N-type epitaxial layer grown on a P-type bulk substrate, or may use a P-type or N-type epitaxial layer grown on an N-type bulk substrate. In addition, a substrate other than a semiconductor substrate (e.g., an organic plastic substrate, etc.) may also be used as the substrate 100.

[0055] Each photoelectric conversion device PD may be disposed within the substrate 100. Each photoelectric conversion device PD may be, for example, a photodiode, but the present disclosure is not limited thereto.

[0056] A plurality of photoelectric conversion devices PD may be disposed within the substrate 100. Figure 3 The multiple photoelectric conversion devices PD may include, for example, a first photoelectric conversion device PD1, a second photoelectric conversion device PD2, a third photoelectric conversion device PD3 and a fourth photoelectric conversion device PD4, which are spaced apart from each other (for example, not in direct contact with each other) and are arranged within the substrate 100, so that the substrate 100 isolates the first photoelectric conversion device PD1, the second photoelectric conversion device PD2, the third photoelectric conversion device PD3 and the fourth photoelectric conversion device PD4 from the outside of the image sensor.

[0057] Specifically, the plurality of photoelectric conversion devices PD may include: a first photoelectric conversion device PD1, a second photoelectric conversion device PD2 spaced apart from the first photoelectric conversion device PD1 in a first direction X (e.g., not in direct contact with the first photoelectric conversion device PD1), a third photoelectric conversion device PD3 spaced apart from the first photoelectric conversion device PD1 in a second direction Y perpendicular to the first direction X (e.g., not in direct contact with the first photoelectric conversion device PD1), and a fourth photoelectric conversion device PD4 spaced apart from the third photoelectric conversion device PD3 in the first direction X (e.g., not in direct contact with the third photoelectric conversion device PD3). However, Figure 3 The number of photoelectric conversion devices PD shown in FIG. 1 is for convenience of explanation only and is not limiting.

[0058] The plurality of gates 115 may be spaced apart from each other and disposed on the first surface 100a of the substrate 100. Each of the plurality of gates 115 may be disposed to be spaced apart from each other in the first direction X and to extend in the second direction Y. For example, the plurality of gates 115 may include a gate of a charge transfer device, a gate of a reset device, a gate of a driving device, etc.

[0059] although Figure 4 It is shown that two gates are disposed on the first surface 100 a of the substrate 100 , but this is only for convenience of description and the present disclosure is not limited thereto.

[0060] It will be understood that an element that is "on" another element may be located above or below the other element. Additionally, an element that is "on" another element may be directly located on the other element so that the two elements are in direct contact with each other, or indirectly located on the other element so that one or more intermediate elements are located between the two elements.

[0061] Despite Figure 4 100. In the figure, each of the plurality of gates 115 is shown to be disposed on the first surface 100a of the substrate 100, but the present disclosure is not limited thereto. That is, according to some example embodiments, each of the plurality of gates 115 may be recessed into the substrate 100 and buried in the substrate 100. In some example embodiments, one or more gates 115 may be located on the second surface 100b of the substrate 100.

[0062] The insulating structure 110 may be disposed on the first surface 100a of the substrate 100. That is, the insulating structure 110 may be disposed on the backside of the substrate 100. The insulating structure 110 may include a metal line 114 and an interlayer insulating layer 112 disposed to surround the metal line 114.

[0063] The interlayer insulating layer 112 may include, for example, silicon dioxide (SiO 2), silicon nitride (SiN), silicon oxynitride (SiON), low-k dielectric materials, or any combination thereof.

[0064] For example, the metal line 114 may include aluminum Al, copper Cu, tungsten W, cobalt Co, ruthenium Ru, etc., but the present disclosure is not limited thereto.

[0065] Metal line 114 may include a plurality of lines stacked sequentially. Figure 4 The metal line 114 is shown to include two layers stacked sequentially, but this is only for convenience of description, and thus the present disclosure is not limited thereto.

[0066] The insulating layer 105 may be disposed between the first surface 100a of the substrate 100 and the insulating structure 110. The insulating layer 105 may be disposed to cover each of the plurality of gates 115 on the first surface 100a of the substrate 100.

[0067] The insulating layer 105 may include, for example, silicon dioxide (SiO 2 ), silicon nitride (SiN), silicon oxynitride (SiON), low-k dielectric materials, or any combination thereof.

[0068] The passivation layer 138 may include, for example, a high-k insulating material. In addition, the passivation layer 138 may include an amorphous structure. More specifically, at least a portion of the high-k insulating material included in the passivation layer 138 may have an amorphous structure. However, the present disclosure is not limited thereto.

[0069] The color filter 150 may be disposed on the passivation layer 138. The color filter 150 may be disposed on the second surface 100b of the substrate 100 and disposed between the passivation layer 138 and a microlens 160 to be described below.

[0070] The color filter 150 may include, for example, a red filter, a green filter, and a blue filter.

[0071] The microlens 160 may be disposed on the passivation layer 138. Specifically, the microlens 160 may be disposed on the passivation layer 138 and the color filter 150 sequentially stacked on the second surface 100b of the substrate 100. The microlens 160 may at least partially include an organic material such as a photosensitive resin, or an inorganic material.

[0072] The planarization layer 140 may be disposed between the passivation layer 138 and the color filter 150. For example, the planarization layer 140 may include a silicon oxide film-based material, a silicon nitride film-based material, a resin, or any combination thereof.

[0073] Despite Figure 4 2 and 3. It is shown that the planarization layer 140 is formed as a single film, but this is only for convenience of explanation, and the present disclosure is not limited thereto.

[0074] like Figure 3 to Figure 4 As shown, the first trench T1 may be formed to extend from the first surface 100a of the substrate 100 to the inside of the substrate 100 between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices PD. As shown, the first trench T1 may extend from the first surface 100a to the inside of the substrate 100 (e.g., inside the substrate 100) in a direction perpendicular to the first surface 100a (e.g., a third direction Z) between adjacent photoelectric conversion devices PD among the plurality of photoelectric conversion devices PD1, PD2, PD3, PD4.

[0075] The first isolation layer 120 may be disposed in the first trench T1. A lower surface 120a of the first isolation layer 120 may contact the insulating layer 105. As shown in the figure, the first isolation layer 120 may be exposed from the first surface 100a of the substrate 100.

[0076] Despite Figure 4 2A and 2B illustrate that the width of the upper surface 120 b of the first isolation layer 120 in the first direction X is formed to be different from the width of the lower surface 120 a of the first isolation layer 120 , but the present disclosure is not limited thereto.

[0077] For example, the first isolation layer 120 may include silicon dioxide (SiO 2 ), silicon nitride (SiN), silicon carbide (SiC), silicon oxycarbide (SiOC), silicon oxynitride (SiON), silicon oxycarbon nitride (SiOCN), or any combination thereof.

[0078] like Figure 3 to Figure 4 As shown, the first support member 170 may be disposed within the first trench T1 such that the first support member 170 does not extend out of the first trench T1 and does not extend through a plane defined by the first surface 100a. Figure 4 As shown, in some example embodiments, the lower surface 170a of the first support member 170 may be coplanar with the first surface 100a. It will be understood that, as used herein, an element that is "coplanar" with another element may be coplanar with the other element within a manufacturing tolerance and / or a material tolerance. The first isolation layer 120 may be disposed in the first trench T1 along the two sidewalls 170s of the first support member 170 (e.g., the two sidewalls 170s of the first support member 170 may be at least partially covered). That is, the first isolation layer 120 may be disposed between each of the plurality of photoelectric conversion devices PD and the first support member 170.

[0079] The first support member 170 may be disposed to fill at least a portion of the first trench T1. That is, the first support member 170 may be disposed on at least a portion between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices PD.

[0080] The first support member 170 may include a first portion 171 , a second portion 172 , a third portion 173 , a fourth portion 174 , and a fifth portion 175 disposed between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices PD.

[0081] The first portion 171 of the first support member 170 may extend between the first photoelectric conversion device PD1 and the second photoelectric conversion device PD2 in the second direction Y. The second portion 172 of the first support member 170 may extend between the third photoelectric conversion device PD3 and the fourth photoelectric conversion device PD4 in the second direction Y. The fourth portion 174 of the first support member 170 may extend between the first photoelectric conversion device PD1 and the third photoelectric conversion device PD3 in the first direction X. The fifth portion 175 of the first support member 170 may extend between the second photoelectric conversion device PD2 and the fourth photoelectric conversion device PD4 in the first direction X. The third portion 173 of the first support member 170 may be disposed between adjacent portions of the first portion 171, the second portion 172, the fourth portion 174, and the fifth portion 175, and may connect the first portion 171, the second portion 172, the fourth portion 174, and the fifth portion 175, respectively.

[0082] The first portion 171 of the first support member 170 may be disposed between the first photoelectric conversion device PD1 and the second photoelectric conversion device PD2, and may be disposed only on a region of a portion adjacent to the third portion 173 of the first support member 170. The second isolation layer 130 may be disposed on the remaining region between the first photoelectric conversion device PD1 and the second photoelectric conversion device PD2. As shown in the figure, the second isolation layer 130 may be on the first isolation layer 120 within the substrate 100.

[0083] As described herein, it will be understood that an element that is "within" another element (e.g., within substrate 100) will be understood to be completely within a volume defined by an outer surface of the other element (excluding boundaries defined by surfaces of openings, ducts, grooves, etc. extending from one or more of the outer surfaces). For example, at least because the second isolation layer 130 is completely within a volume defined at least in part by the first surface 100a and the second surface 100b of the substrate 100, the second isolation layer 130 will be understood to be within the substrate 100.

[0084] The second portion 172 of the first support member 170 may be disposed only on a portion between the third and fourth photoelectric conversion devices PD3 and PD4 adjacent to the third portion 173 of the first support member 170. The second isolation layer 130 may be disposed on a remaining region between the third and fourth photoelectric conversion devices PD3 and PD4.

[0085] The fourth portion 174 of the first support member 170 may be disposed only on a portion between the first and third photoelectric conversion devices PD1 and PD3 adjacent to the third portion 173 of the first support member 170. The second isolation layer 130 may be disposed on a remaining region between the first and third photoelectric conversion devices PD1 and PD3.

[0086] The fifth portion 175 of the first support member 170 may be disposed only on a portion between the second and fourth photoelectric conversion devices PD2 and PD4 adjacent to the third portion 173 of the first support member 170. The second isolation layer 130 may be disposed on the remaining region between the second and fourth photoelectric conversion devices PD2 and PD4.

[0087] The lower surface 170a of the first support member 170 may be formed to be coplanar with the first surface 100a of the substrate 100. The lower surface 170a of the first support member 170 may be formed to be coplanar with the lower surface 120a of the first isolation layer 120. In addition, the upper surface 170b of the first support member 170 may be formed to be coplanar with the upper surface 120b of the first isolation layer 120.

[0088] For example, the first support member 170 may include silicon dioxide (SiO 2 ), silicon nitride (SiN), silicon carbide (SiC), silicon oxycarbide (SiOC), silicon oxynitride (SiON), silicon oxycarbon nitride (SiOCN), or any combination thereof. In addition, the first support member 170 may include, for example, a metal oxide. However, the present disclosure is not limited thereto.

[0089] like Figure 3 to Figure 4 As shown, the second trench T2 can be formed on the first trench T1 between adjacent photoelectric conversion devices among a plurality of photoelectric conversion devices PD (for example, located on the surface of the first trench T1 away from the first surface 100a). The second trench T2 can be formed to extend from the first surface 100a of the substrate 100 into the substrate 100. As shown in the figure, the second trench T2 can extend from the first surface 100a to the interior of the substrate 100 (for example, inside the substrate 100) in a direction extending perpendicular to the first surface 100a (for example, a third direction Z) between adjacent photoelectric conversion devices PD among a plurality of photoelectric conversion devices PD1, PD2, PD3, PD4. The second trench T2 can extend in a third direction Z perpendicular to the first direction X and the second direction Y to the second surface 100b of the substrate 100, for example, toward the second surface 100b of the substrate 100 or completely to the second surface 100b of the substrate 100. As shown Figure 4 As shown, for example, the second trench T2 completely extends to the second surface 100b so as to establish an opening in the second surface 100b. However, the present disclosure is not limited thereto.

[0090] The width of the second trench T2 in the first direction X may be formed to be narrower than the width of the first trench T1 in the first direction X. The first supporter 170 may be disposed in the second trench T2 overlapping the first trench T1 in the first direction X.

[0091] The second isolation layer 130 may be disposed on the first support member 170 in the interior of the second trench T2 such that the second isolation layer 130 does not extend out of the second trench T2 and thus does not extend through any of the planes defined by the surfaces 100b, 120b, and / or 170b. The second isolation layer 130 may overlap the first support member 170 in the third direction Z.

[0092] The second isolation layer 130 may include a material different from that of the first isolation layer 120. The second isolation layer 130 may include a material having excellent gap-filling properties, for example, polycrystalline silicon (poly-Si). However, the present disclosure is not limited thereto.

[0093] The first trench passivation layer 135 may be disposed along the sidewall and upper portion of the second isolation layer 130 in the second trench T2. Specifically, the first trench passivation layer 135 may be disposed between the sidewall of the second isolation layer 130 in the second trench T2 and the substrate 100 and between the second isolation layer 130 and the passivation layer 138. The first trench passivation layer 135 may surround the upper surface and sidewall of the second isolation layer 130. In addition, the first trench passivation layer 135 may surround the sidewall of the first support member 170.

[0094] Despite Figure 4 2 and 3 , it is shown that the first trench passivation layer 135 is conformally formed in the second trench T2 , but the present disclosure is not limited thereto.

[0095] The first trench passivation layer 135 may include the same material as the passivation layer 138, for example, a high-k insulating material. However, the present disclosure is not limited thereto. That is, according to some example embodiments, the first trench passivation layer 135 may include a material different from that of the passivation layer 138.

[0096] The image sensor according to some example embodiments may reduce or prevent a tilt or bending phenomenon of each structure isolated by an isolation region (e.g., deep trench isolation (DTI)) in a manufacturing process of the image sensor by disposing the first support member 170 in an isolation region (e.g., deep trench isolation (DTI)) formed between adjacent photoelectric conversion devices among a plurality of photoelectric conversion devices PD. Therefore, as a result of such reduction or prevention, the performance of the image sensor may be improved.

[0097] In the following, reference will be made to Figures 5 to 17 A method for manufacturing an image sensor according to some example embodiments is described.

[0098] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 and Fig.17 is a diagram illustrating an intermediate stage of manufacturing provided to explain a method for manufacturing an image sensor according to some example embodiments.

[0099] Reference Figure 5 , a first mask pattern M1 may be formed on the first surface 100 a of the substrate 100 .

[0100] Hereinafter, a first trench T1 may be formed in the substrate 100 based on etching the first surface 100a of the substrate 100 using the first mask pattern M1 as a mask. Figure 5 1 and 2 show that the sidewall of the first trench T1 has an inclined profile, but the present disclosure is not limited thereto. Such formation of the first trench T1 may also be referred to as forming the first trench T1 on the first surface 100 a of the substrate 100 .

[0101] Reference Figure 6 , a first filling layer 120L may be formed on the first mask pattern M1 and within the first trench T1.

[0102] For example, the first filling layer 120L may include silicon oxide (SiO 2 ), silicon nitride (SiN), silicon carbide (SiC), silicon oxycarbide (SiOC), silicon oxynitride (SiON), silicon oxycarbon nitride (SiOCN), or any combination thereof.

[0103] Reference Figure 7 , a second mask pattern M2 may be formed on the first filling layer 120L, and a second trench T2 may be formed in the substrate 100 by etching the first filling layer 120L and the substrate 100 using the second mask pattern M2 as a mask.

[0104] The second trench T2 may pass through the first filling layer 120L in the first trench T1 in the third direction Z perpendicular to the first surface 100a, and may be formed to extend in the substrate 100 on the lower portion of the first trench T1. The width of the second trench T2 in the first direction X may be formed to be narrower than the width of the first trench T1 in the first direction X.

[0105] Reference Figure 8, a first trench passivation layer 135 including a high-k insulating material may be formed on the second mask pattern M2 , the sidewalls of the second trenches T2 , and the bottom surfaces of the second trenches T2 .

[0106] According to some example embodiments, a first trench passivation layer 135 may be formed on sidewalls of the second trenches T2 and on bottom surfaces of the second trenches T2 after removing the second mask pattern M2 .

[0107] Despite Figure 8 2 and 3 , it is shown that the first trench passivation layer 135 is conformally formed on the second mask pattern M2 , the sidewalls of the second trenches T2 , and the bottom surfaces of the second trenches T2 , but the present disclosure is not limited thereto.

[0108] Reference Fig. 9 , a sacrificial layer 180 may be formed on the first trench passivation layer 135 to partially or entirely fill the second trench T2. The sacrificial layer 180 may be formed on the first trench passivation layer 135 formed on the second mask pattern M2.

[0109] The sacrificial layer 180 may include, for example, SOH. However, the present disclosure is not limited thereto.

[0110] Reference Fig.10 , at least a portion of the sacrificial layer 180 within the second trench T2 may be etched through an etch-back process. In this case, the sacrificial layer 180 formed on the second mask pattern M2 may also be etched.

[0111] After etching the sacrificial layer 180 by the etch-back process, the sacrificial layer 180 may exist only in the inner portion T2_I of the second trench T2, and thus the sacrificial layer 180 in at least a portion (e.g., the outer portion T2_O) of the second trench T2 may be depleted and thus the at least a portion of the second trench T2 is not filled with the sacrificial layer 180 and may be exposed to the outside of the image sensor. The upper surface 180a of the sacrificial layer 180 may be formed to be coplanar with the lower surface 120b of the first filling layer 120L. However, the present disclosure is not limited thereto.

[0112] Reference Fig.11 A supporting layer 170L may be formed on the sacrificial layer 180 to fill the remaining portion of the second trench T2 (eg, the outer portion T2_O of the second trench T2) not filled by the sacrificial layer. The supporting layer 170L may also be formed on the first trench passivation layer 135 formed on the second mask pattern M2.

[0113] The surface 170b of the support layer 170L may be formed to be coplanar with the lower surface 120b of the first filling layer 120L. However, the present disclosure is not limited thereto.

[0114] Reference Fig.12After the third mask pattern M3 is formed on the support layer 170L, the support layer 170L may be etched by using the third mask pattern M3 as a mask. The planar shape of the third mask pattern M3 may be similar to Figure 3 The planar shapes of the first support members 170 shown are the same.

[0115] Reference Fig.13 The sacrificial layer 180 in the inner portion T2_I of the second trench T2 may be removed by an ashing strip process, so that the sacrificial layer 180 in the inner portion T2_I is depleted, and thus the sacrificial layer 180 in the second trench T2 is depleted. The sacrificial layer 180 may be removed through the region of the second trench T2 where the support layer 170L is not formed.

[0116] Reference Fig.14 The second filling layer 130L may be formed to fill the inner portion of the second trench T2 where the sacrificial layer 180 is removed. The second filling layer 130L may be formed to cover the inner portion of the second trench T2 where the support layer 170L is not formed, the exposed first trench passivation layer 135, the exposed support layer 170L, and the third mask pattern M3.

[0117] Reference Fig.15 , performing a planarization etching process (eg, a CMP process) may remove the second filling layer 130L, the third mask pattern M3, the support layer 170L, the first trench passivation layer 135, the second mask pattern M2, the first filling layer 120L, and the first mask pattern M1 formed on the first surface 100a of the substrate 100.

[0118] By planarization etching process, such as Fig.15 As shown, the first isolation layer 120 and the first support member 170 may be exposed from the same plane as the first surface 100a of the substrate 100 (e.g., may have a lower surface 170a coplanar with the first surface 100a of the substrate 100). Therefore, the support member 170 may be formed by etching a portion of the support layer 170L before forming the photoelectric conversion device PD in the substrate 100.

[0119] Through this process, the first isolation layer 120 may be formed in the first trench T1 , and the second isolation layer 130 and the first support member 170 may be formed in the second trench T2 , respectively.

[0120] Reference Fig.16 , a plurality of photoelectric conversion devices PD may be formed on both sides (eg, opposite sides) of the first isolation layer 120 and the second isolation layer 130 within the substrate 100. The plurality of photoelectric conversion devices PD may be formed by an ion implantation process.

[0121] Thereafter, a plurality of gates 115 may be formed on the first surface 100a of the substrate 100. In this case, each of the plurality of gates 115 may be formed not to overlap the first isolation layer 120. Therefore, the first isolation layer 120 may be disposed between the plurality of gates 115. The gate may be formed after forming the photoelectric conversion device PD.

[0122] Afterwards, the insulating layer 105 may be formed to cover the first surface 100a of the substrate 100, the plurality of gates 115, the first isolation layer 120, and the first support member 170. In this case, referring to Figure 3 The insulating layer 105 may also be formed on the second isolation layer 130 in the second trench T2 where the first support member 170 is not formed.

[0123] Thereafter, an insulating structure 110 including an interlayer insulating layer 112 and a metal line 114 may be formed on the insulating layer 105 .

[0124] Reference Fig.17 , a portion of the substrate 100 may be removed to reduce the thickness of the substrate 100. In this case, after the second surface 100b of the substrate 100 is directed upward by flipping the substrate 100, a portion of the substrate 100 may be removed by performing a planarization etching process (e.g., a CMP process). Through the planarization etching process of removing a portion of the substrate 100, the first trench passivation layer 135 formed in the second trench T2 may be exposed from the same plane as the second surface 100b of the substrate 100.

[0125] Reference Figure 4 , a passivation layer 138 may be formed on the second surface 100b of the substrate 100. For example, the passivation layer 138 may be formed by using any one of atomic layer deposition (ALD), physical vapor deposition (PVD), and chemical vapor deposition (CVD). Thereafter, a planarization layer 140 may be formed on the passivation layer 138.

[0126] After forming the planarization layer 140 , the color filter 150 and the micro lens 160 may be formed on the planarization layer 140 . Figure 4 The image sensor shown in .

[0127] In the following, reference will be made to Fig.18 To describe an image sensor according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0128] Fig.18 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0129] Reference Fig.18, in an image sensor according to some example embodiments, the third trench T3 formed with the second isolation layer 230 may extend only to a specific region of the substrate 100. That is, the upper surface T3a of the third trench T3 may be formed within the substrate 100 so that the upper surface T3a does not appear as an opening in a surface opposite to a surface from which the third trench T3 extends. Fig.18 As shown, the upper surface T3 a is located within the substrate 100 , such that the upper surface T3 a does not appear as an opening in the second surface 100 b .

[0130] The first trench passivation layer 235 may be disposed within the third trench T3 and along the sidewall and upper portion of the third trench T3 .

[0131] In the following, reference will be made to Fig.19 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0132] Fig.19 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0133] Reference Fig.19 , in the image sensor according to some example embodiments, the first isolation layer 320 and the first support member 370 may be disposed on the second surface 100 b of the substrate 100 .

[0134] The fourth trench T4 formed with the first isolation layer 320 and the first support member 370 may be formed to extend from the second surface 100b of the substrate 100 into the substrate 100. The fifth trench T5 formed with the second isolation layer 330 may penetrate the first isolation layer 320 from the second surface 100b of the substrate 100 and extend to the first surface 100a of the substrate 100.

[0135] The first trench passivation layer 335 may be disposed within the fifth trench T5 along the sidewalls and the bottom surface of the fifth trench T5 .

[0136] The second surface 100b of the substrate 100, the upper surface 320a of the first isolation layer 320, and the upper surface 370a of the first support member 370 may be formed to be coplanar with each other. In addition, the lower surface 320b of the first isolation layer 320 and the lower surface 370b of the first support member 370 may be formed to be coplanar with each other. It will be understood that, as used herein, elements that are "coplanar" with each other include elements that are coplanar with each other within manufacturing tolerances and / or material tolerances.

[0137] A plurality of gates 115 may be formed on a first surface 100 a of the substrate 100 opposite to the second surface 100 b of the substrate 100 where the fourth trench T4 is formed.

[0138] It will be understood that, as described herein, an element located “on” another element may be located above or below the other element, and the element located “on” another element may be in direct contact with the other element or may be not in direct contact with the other element via one or more intermediate spaces and / or structures.

[0139] In the following, reference will be made to Fig. 20 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0140] Fig. 20 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0141] Reference Fig. 20 , in the image sensor according to some example embodiments, the first isolation layer 420 and the first support member 470 may be disposed on the second surface 100 b of the substrate 100 .

[0142] like Fig. 20 As shown, the fourth trench T4 formed with the first isolation layer 420 and the first support member 470 may extend from the second surface 100b of the substrate 100 into the substrate 100 in the third direction Z and between adjacent photoelectric conversion devices PD. The sixth trench T6 formed with the second isolation layer 430 may extend only to a specific area of ​​the substrate 100. That is, the lower surface T6a of the sixth trench T6 may be formed in the substrate 100 so that the lower surface T6a does not appear as an opening in a surface opposite to the surface from which the sixth trench T6 extends. For example, as Fig. 20 As shown, the lower surface T6a is located within the substrate 100, so that the lower surface T6a does not appear as an opening in the first surface 100a. Fig. 20 As shown, the sixth trench T6 can be formed in the lower portion of the fourth trench T4 (for example, on the surface of the fourth trench T4 away from the second surface 100b), and can extend from the lower portion of the fourth trench T4 and away from the second surface 100b in the third direction Z and into the interior of the substrate 100.

[0143] The first trench passivation layer 435 may be disposed within the sixth trench T6 along the sidewalls and the bottom surface of the sixth trench T6 .

[0144] The second surface 100b of the substrate 100, the upper surface 420a of the first isolation layer 420, and the upper surface 470a of the first support 470 may be formed coplanar with each other. In addition, the lower surface 420b of the first isolation layer 420 and the lower surface 470b of the first support 470 may be formed coplanar with each other.

[0145] In the following, reference will be made to Fig.21 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0146] Fig.21 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0147] Reference Fig.21 In the image sensor according to some example embodiments, the third trench T3 formed with the second isolation layer 530 may extend from the first surface 100a of the substrate 100 only to a specific region of the substrate 100. That is, the upper surface T3a of the third trench T3 may be formed within the substrate 100.

[0148] The first trench passivation layer 535 may be disposed within the third trench T3 and along the sidewalls and upper portion of the third trench T3 .

[0149] The third isolation layer 591 may be disposed on the second surface 100b of the substrate 100. The fourth trench T4 formed with the third isolation layer 591 may be formed to extend from the second surface 100b of the substrate 100 into the substrate 100. The sixth trench T6 formed with the fourth isolation layer 592 may extend from the second surface 100b of the substrate 100 to only a specific area of ​​the substrate 100. That is, the lower surface T6a of the sixth trench T6 may be formed in the substrate 100. At least as Fig.21 As shown in FIG. 5 , the third isolation layer 591 may be located in the fourth trench T4, and the fourth isolation layer 592 may be located in the sixth trench T6. The fourth isolation layer 592 may be located between the third isolation layer 591 and the second isolation layer 530.

[0150] The third trench T3 and the sixth trench T6 may be formed to overlap each other in the third direction Z. Fig.21 As shown, the upper surface T3 a of the third trench T3 may be formed to be in contact with the lower surface T6 a of the sixth trench T6 .

[0151] The second trench passivation layer 595 may be disposed within the sixth trench T6 along the sidewalls and bottom surface of the sixth trench T6. The second surface 100b of the substrate 100 and the upper surface 591a of the third isolation layer 591 may be formed to be coplanar with each other.

[0152] In the following, reference will be made to Fig. 22 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0153] Fig. 22is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0154] Reference Fig. 22 In the image sensor according to some example embodiments, the third trench T3 formed with the second isolation layer 630 may extend from the first surface 100a of the substrate 100 only to a specific region of the substrate 100. That is, the upper surface T3a of the third trench T3 may be formed within the substrate 100.

[0155] The first trench passivation layer 635 may be disposed within the third trench T3 and along the sidewall and upper portion of the third trench T3 .

[0156] The third isolation layer 691 may be disposed on the second surface 100b of the substrate 100. The third isolation layer 691 may be between adjacent photoelectric conversion devices PD and may be exposed from the second surface 100b of the substrate 100. The fourth trench T4 formed with the third isolation layer 691 and the second support member 670 may be formed to extend from the second surface 100b of the substrate 100 to the inside of the substrate 100. The sixth trench T6 formed with the fourth isolation layer 692 may extend from the second surface 100b of the substrate 100 to only a specific area of ​​the substrate 100. That is, the lower surface T6a of the sixth trench T6 may be formed in the substrate 100. As shown in the figure, the second support member 670 may be located in the sixth trench T6 so that the second support member 670 does not extend at least through the plane defined by the second surface 100b. The fourth isolation layer 692 may be located between the third isolation layer 691 and the second isolation layer 630.

[0157] The third trench T3 and the sixth trench T6 may be formed to overlap each other in the third direction Z. An upper surface T3 a of the third trench T3 may be formed to be in contact with a lower surface T6 a of the sixth trench T6 .

[0158] The second trench passivation layer 695 may be disposed in the sixth trench T6 along the sidewall and bottom surface of the sixth trench T6. The second surface 100b of the substrate 100, the upper surface 691a of the third isolation layer 691, and the upper surface 670a of the second support member 670 may be formed to be coplanar with each other. In addition, the lower surface 691b of the third isolation layer 691 and the lower surface 670b of the second support member 670 may be formed to be coplanar with each other.

[0159] In the following, reference will be made to Fig.23 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0160] Fig.23 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0161] Reference Fig.23 In the image sensor according to some example embodiments, the seventh trench T7 formed with the second isolation layer 730 may extend from the first surface 100a of the substrate 100 only to a specific region of the substrate 100. That is, the upper surface T7a of the seventh trench T7 may be formed within the substrate 100.

[0162] The first trench passivation layer 735 may be disposed within the seventh trench T7 along the sidewall and upper portion of the seventh trench T7 .

[0163] The third isolation layer 791 may be disposed on the second surface 100b of the substrate 100. The fourth trench T4 formed with the third isolation layer 791 may be formed to extend from the second surface 100b of the substrate 100 into the substrate 100. The eighth trench T8 formed with the fourth isolation layer 792 may extend from the second surface 100b of the substrate 100 to only a specific region of the substrate 100. That is, the lower surface TSa of the eighth trench T8 may be formed in the substrate 100. The fourth isolation layer 792 may be located between the third isolation layer 791 and the second isolation layer 730.

[0164] The seventh trench T7 and the eighth trench T8 may be formed to overlap each other in the third direction Z. Fig.23 As shown, the upper surface T7a of the seventh trench T7 may be formed to be spaced apart from the lower surface T8a of the eighth trench T8 (e.g., not in direct contact with the lower surface T8a of the eighth trench T8). That is, the substrate 100 may be disposed between the upper surface T7a of the seventh trench T7 and the lower surface T8a of the eighth trench T8, and thus may be located between the second isolation layer 730 and the fourth isolation layer 792.

[0165] The second trench passivation layer 795 may be disposed within the eighth trench T8 along the sidewalls and bottom surface of the eighth trench T8. The second surface 100b of the substrate 100 and the upper surface 791a of the third isolation layer 791 may be formed to be coplanar with each other.

[0166] In the following, reference will be made to Fig.24 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0167] Fig.24 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0168] Reference Fig.24In the image sensor according to some example embodiments, the seventh trench T7 formed with the second isolation layer 830 may extend from the first surface 100a of the substrate 100 only to a specific region of the substrate 100. That is, the upper surface T7a of the seventh trench T7 may be formed within the substrate 100.

[0169] The first trench passivation layer 835 may be disposed within the seventh trench T7 and along the sidewalls and upper portion of the seventh trench T7 .

[0170] The third isolation layer 891 may be disposed on the second surface 100b of the substrate 100. The fourth trench T4 formed with the third isolation layer 891 and the second support member 870 may be formed to extend from the second surface 100b of the substrate 100 into the substrate 100. As shown in the figure, the second support member 870 may be located in the eighth trench T8 so that the second support member 870 does not extend at least through the plane defined by the second surface 100b. The eighth trench T8 formed with the fourth isolation layer 892 may extend from the second surface 100b of the substrate 100 only to a specific area of ​​the substrate 100. That is, the lower surface T8a of the eighth trench T8 may be formed in the substrate 100. The fourth isolation layer 892 may be located between the third isolation layer 891 and the second isolation layer 830.

[0171] The seventh trench T7 and the eighth trench T8 may be formed to overlap each other in the third direction Z. The upper surface T7a of the seventh trench T7 may be formed to be spaced apart from the lower surface T8a of the eighth trench T8. That is, the substrate 100 may be disposed between the upper surface T7a of the seventh trench T7 and the lower surface T8a of the eighth trench T8, and thus may be located between the second isolation layer 830 and the fourth isolation layer 892.

[0172] The second trench passivation layer 895 may be disposed in the eighth trench T8 along the sidewall and bottom surface of the eighth trench T8. The second surface 100b of the substrate 100, the upper surface 891a of the third isolation layer 891, and the upper surface 870a of the second support member 870 may be formed to be coplanar with each other. In addition, the lower surface 891b of the third isolation layer 891 and the lower surface 870b of the second support member 870 may be formed to be coplanar with each other.

[0173] In the following, reference will be made to Fig.25 Describes image sensors according to some example embodiments. Figure 4 The differences between the image sensors shown in FIG.

[0174] Fig.25 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0175] Reference Fig.25, an image sensor according to some example embodiments may include a sacrificial layer 180 disposed along (eg, covering) an inner wall of the second trench T2 .

[0176] Specifically, the sacrificial layer 180 may be disposed on the first trench passivation layer 135 disposed within the second trench T2 . However, the sacrificial layer 180 may not be disposed between the first trench passivation layer 135 and the first support 170 .

[0177] The second isolation layer 930 may be disposed to fill the inside of the second trench T2 on the sacrificial layer 180 .

[0178] In the following, reference will be made to Fig.26 Describes image sensors according to some example embodiments. Figure 3 The differences between the image sensors shown in FIG.

[0179] Fig.26 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0180] Reference Fig.26 , in the image sensor according to some example embodiments, the first support member 1070 may include a first portion 1071 , a second portion 1072 , a third portion 1073 , and a fourth portion 1074 disposed between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices PD.

[0181] The second isolation layer 1030 may be disposed between the first portion 1071 of the first support 1070 and the second portion 1072 of the first support 1070. That is, the first portion 1071 of the first support 1070 may not be connected to the second portion 1072 of the first support 1070.

[0182] The second isolation layer 1030 may be disposed between the third portion 1073 of the first support 1070 and the fourth portion 1074 of the first support 1070. That is, the third portion 1073 of the first support 1070 may not be connected to the fourth portion 1074 of the first support 1070.

[0183] In the following, reference will be made to Fig. 27 Describes image sensors according to some example embodiments. Figure 3 The differences between the image sensors shown in FIG.

[0184] Fig. 27 is a cross-sectional view provided to explain an image sensor according to some example embodiments.

[0185] Reference Fig. 27In the image sensor according to some example embodiments, the first support member 1170 may include a first portion 1171, a second portion 1172, a third portion 1173, a fourth portion 1174, and a fifth portion 1175 disposed between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices PD.

[0186] The first portion 1171 of the first support member 1170 may be formed to completely overlap with the first photoelectric conversion device PD1 in the first direction X. The second portion 1172 of the first support member 1170 may be formed to completely overlap with the fourth photoelectric conversion device PD4 in the first direction X. The fourth portion 1174 of the first support member 1170 may be formed to completely overlap with the first photoelectric conversion device PD1 in the second direction Y. The fifth portion 1175 of the first support member 1170 may be formed to completely overlap with the fourth photoelectric conversion device PD4 in the second direction Y. The third portion 1173 of the first support member 1170 may be disposed between adjacent portions of the first portion 1171, the second portion 1172, the fourth portion 1174, and the fifth portion 1175, and connect each portion of the first portion 1171, the second portion 1172, the fourth portion 1174, and the fifth portion 1175.

[0187] The example embodiments according to the present disclosure are described above with reference to the accompanying drawings, but it should be understood that the present disclosure is not limited to the aforementioned example embodiments, but can be manufactured in various different forms, and can be implemented in other specific forms by those skilled in the art without changing the technical concept or basic features of the present disclosure. Therefore, it will be understood that the above example embodiments are merely illustrative and should not be interpreted as limiting.

Claims

1. An image sensor, comprising: a substrate comprising a first surface and a second surface opposite to each other; a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices not in direct contact with each other within the substrate; a first trench configured to extend from the first surface of the substrate to the interior of the substrate and between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices; a first support member, the first support member being located in the first groove; as well as a first isolation layer, wherein the first isolation layer at least partially covers two side walls of the first support member in the first trench, Wherein, a trench passivation layer exists between each of the two side walls of the first support member and the first isolation layer, wherein the lower surface of the first support member is coplanar with the first surface of the substrate, Wherein, an upper surface of the first support member is coplanar with an upper surface of the first isolation layer.

2. The image sensor according to claim 1, further comprising: a second trench located on the first trench and extending from the first surface of the substrate into the substrate; as well as A second isolation layer is located in the second trench.

3. The image sensor according to claim 2, wherein: The second trench extends to the second surface of the substrate.

4. The image sensor according to claim 2, further comprising: a third trench extending from the second surface of the substrate into the substrate between the adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices; a fourth trench extending from a lower portion of the third trench and from the second surface of the substrate to the interior of the substrate; a third isolation layer, wherein the third isolation layer is located in the third trench; as well as A fourth isolation layer is located in the fourth trench.

5. The image sensor according to claim 4, wherein: An upper surface of the second trench contacts a lower surface of the fourth trench.

6. The image sensor according to claim 5, further comprising: A second support member is located in the third groove.

7. The image sensor according to claim 4, wherein: An upper surface of the second trench is not in direct contact with a lower surface of the fourth trench.

8. The image sensor according to claim 2, wherein: An upper surface of the second trench is located in the substrate.

9. The image sensor according to claim 2, further comprising: A sacrificial layer covers an inner wall of the second trench.

10. The image sensor according to claim 1, further comprising: A gate is located on the first surface of the substrate.

11. The image sensor according to claim 1, further comprising: A gate is located on the second surface of the substrate.

12. An image sensor, comprising: a substrate comprising a first surface and a second surface opposite to each other; A plurality of photoelectric conversion devices, wherein the plurality of photoelectric conversion devices are located in the substrate, and the plurality of photoelectric conversion devices include: a first photoelectric conversion device, a second photoelectric conversion device, the second photoelectric conversion device not being in direct contact with the first photoelectric conversion device in the first direction, a third photoelectric conversion device, the third photoelectric conversion device not in direct contact with the first photoelectric conversion device in a second direction perpendicular to the first direction, and a fourth photoelectric conversion device, wherein the fourth photoelectric conversion device is not in direct contact with the third photoelectric conversion device in the first direction; A support member, the support member comprising: a first portion, the first portion being located between the first photoelectric conversion device and the second photoelectric conversion device, and a second portion, the second portion being located between the third photoelectric conversion device and the fourth photoelectric conversion device; and a first isolation layer, wherein the first isolation layer at least partially covers two side walls of the support member in the substrate, Wherein, there is a trench passivation layer between each of the two side walls of the support member and the first isolation layer, wherein the lower surface of the support member is coplanar with the first surface of the substrate, Wherein, the upper surface of the support member is coplanar with the upper surface of the first isolation layer.

13. The image sensor according to claim 12, wherein: The support member further includes a third portion connecting the first portion and the second portion.

14. The image sensor according to claim 12, wherein: The first portion completely overlaps the first photoelectric conversion device in the first direction.

15. The image sensor according to claim 12, further comprising: A second isolation layer is located on the first isolation layer in the substrate.

16. The image sensor according to claim 15, wherein: The second isolation layer is located between the first portion and the second portion.

17. An image sensor comprising: a substrate comprising a first surface and a second surface opposite to each other; a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices not in direct contact with each other within the substrate; a first isolation layer, the first isolation layer being located between adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices, the first isolation layer being exposed from the first surface of the substrate; a second isolation layer, the second isolation layer being located on the first isolation layer in the substrate; as well as a support member, the support member being located in the first isolation layer and having a lower surface coplanar with the first surface of the substrate, Wherein, there is a trench passivation layer between the support member and the first isolation layer, Wherein, the upper surface of the support member is coplanar with the upper surface of the first isolation layer.

18. The image sensor according to claim 17, further comprising: a third isolation layer, the third isolation layer being located between the adjacent photoelectric conversion devices among the plurality of photoelectric conversion devices, the third isolation layer being exposed from the second surface of the substrate; as well as A fourth isolation layer, wherein the fourth isolation layer is located between the second isolation layer and the third isolation layer.

19. The image sensor according to claim 17, further comprising: A gate is located on the first surface of the substrate.

Images