Microfluidic actuator

Abstract

A microfluidic actuator includes: a substrate having a plurality of first outflow holes and a plurality of second outflow holes; a cavity layer having a fluid storage chamber; a vibration layer; a first metal layer; a piezoelectric actuator layer; a second metal layer having an upper electrode pad and a lower electrode pad; an inlet layer; a resonance layer; and an array hole plate. A driving power source with different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the vibration layer to generate an up-and-down displacement, so that the fluid is inhaled from the inlet layer, converges to the fluid storage chamber, and finally is extruded and discharged through the plurality of first outflow holes and the plurality of second outflow holes and pushes open the array hole plate to complete fluid transmission.

Description

Technical Field

[0001] This case relates to an actuator, especially a microfluidic actuator fabricated using microelectromechanical surface and bulk micromachining processes. Background Art

[0002] Currently, in various fields such as medicine, computer technology, printing, energy and other industries, products are developing towards refinement and miniaturization. Among them, fluid actuators included in products such as micropumps, sprayers, inkjet heads, and industrial printing devices are the key technologies.

[0003] With the rapid development of technology, the applications of fluid delivery structures have become increasingly diversified. Examples include industrial applications, biomedical applications, healthcare, electronic heat dissipation... etc., and even the recently popular wearable devices. It can be seen that traditional fluid actuators have gradually shown a trend towards miniaturization of devices and maximization of flow rate.

[0004] In the prior art, various microfluidic actuators fabricated using microelectromechanical processes have been developed. However, enhancing the efficacy of fluid transmission through innovative structures remains an important aspect of development. Summary of the Invention

[0005] The main objective of this case is to provide a valved microfluidic actuator fabricated using microelectromechanical processes for fluid transmission. The microfluidic actuator of this case is fabricated using microelectromechanical surface and bulk micromachining processes and supplemented with packaging technology.

[0006] A general implementation aspect of this case is a microfluidic actuator, comprising: a substrate, a cavity layer, a vibration layer, a first metal layer, a piezoelectric actuator layer, an isolation layer, a second metal layer, a waterproof layer, a photoresist layer, an inlet layer, a flow channel layer, a resonance layer, and an array hole sheet. The substrate has a first surface and a second surface, and an outlet groove, a plurality of first outflow holes, and a plurality of second outflow holes are formed through an etching process. The outlet groove communicates with the plurality of first outflow holes and the plurality of second outflow holes. The plurality of second outflow holes are disposed outside the plurality of first outflow holes. The cavity layer is formed on the first surface of the substrate through a deposition process, and a fluid storage chamber is formed through an etching process. The fluid storage chamber communicates with the plurality of first outflow holes and the plurality of second outflow holes. The vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and a vibration area are formed through an etching process. The plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer to define the vibration area. The first metal layer is formed on the vibration layer through a deposition process, and a lower electrode area, a plurality of barrier areas, and a plurality of gaps are formed through an etching process. The lower electrode area is formed at a position corresponding to the vibration area. The plurality of gaps are formed between the lower electrode area and the plurality of barrier areas. The plurality of barrier areas are correspondingly formed at positions outside the plurality of fluid grooves. The piezoelectric actuator layer is formed on the first metal layer through a deposition process, and an actuator area is formed through an etching process at a position corresponding to the lower electrode area of the first metal layer. The isolation layer is formed on the piezoelectric actuator layer and the first metal layer through a deposition process, and a plurality of gap walls are formed in the plurality of gaps through an etching process. The second metal layer is formed on the piezoelectric actuator layer, the first metal layer, and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process. The waterproof layer is formed on the first metal layer, the second metal layer, and the isolation layer through a coating process, and the upper electrode pad and the lower electrode pad are exposed through an etching process. The photoresist layer is formed on the first metal layer, the second metal layer, and the waterproof layer through a developing process. The inlet layer forms a plurality of fluid inlets through an etching process or a laser process. The flow channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels, and a plurality of flow channel inlets are formed through a photolithography process. The plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer. The plurality of inflow channels and the plurality of flow channel inlets are disposed around the inflow chamber. The plurality of inflow channels communicate between the plurality of flow channel inlets and the inflow chamber. The resonance layer is formed on the flow channel layer through a rolling process, a cavity through-hole is formed through an etching process, and is bonded to the photoresist layer through a flipping alignment process and a wafer bonding process. The array hole sheet is formed on the substrate through a pasting process. The array hole sheet has a plurality of hole sheet holes. The plurality of hole sheet holes are misaligned with the plurality of first outflow holes and the plurality of second outflow holes to close the plurality of first outflow holes and the plurality of second outflow holes of the first substrate.Provide a driving power source with different phase charges to the upper electrode pad and the lower electrode pad to drive and control the up and down displacement of the vibration area of the vibration layer, so that the fluid is sucked in from multiple fluid inlets, flows through multiple inflow channels to the inflow chamber, then flows through the cavity through-hole to the resonance chamber, and finally flows through multiple fluid grooves to the storage chamber, and finally is squeezed out through multiple first outflow holes and multiple second outflow holes and pushes open the array hole plate and is discharged from multiple hole plate holes to complete fluid transmission. Description of the Drawings

[0007] Figure 1A It is a front cross-sectional schematic view of the first embodiment of the microfluidic actuator in this case.

[0008] Figure 1B It is a side cross-sectional schematic view of the first embodiment in this case.

[0009] Figures 2A to 2AH It is a schematic diagram of the manufacturing steps of the first embodiment in this case broken down.

[0010] Figure 3 It is a top view schematic diagram of the first embodiment in this case.

[0011] Figure 4 It is a top view schematic diagram of the inlet layer of the first embodiment in this case.

[0012] Figure 5 It is a top view schematic diagram of the flow-through hole of the first embodiment in this case.

[0013] Figures 6A to 6E It is a schematic diagram of the actuation of the first embodiment in this case.

[0014] Figure 7A It is a cross-sectional schematic view of the second embodiment of the microfluidic actuator in this case.

[0015] Figure 7B It is a bottom view schematic diagram of other embodiments in this case.

[0016] Figure 8 It is a bottom view schematic diagram of the array hole plate of the third embodiment in this case.

[0017] Figures 9A to 9C It is a schematic diagram of the flipping alignment process and the wafer bonding process of the fourth embodiment in this case.

[0018] Description of the Reference Numerals

[0019] 100, 100', 100", 100'": Microfluidic actuator

[0020] 10: Actuating unit

[0021] 1a, 1a'": First substrate

[0022] 11a: First surface

[0023] 12a: Second surface

[0024] 13a: Outlet groove

[0025] 14a: Auxiliary groove

[0026] 15a, 15a'": First outflow hole

[0027] 16a, 16a'": Second outflow hole

[0028] 1b: Cavity layer

[0029] 1c: Vibration layer

[0030] 11c: Fluid groove

[0031] 12c: Vibration area

[0032] 1d: First metal layer

[0033] 11d: Lower electrode area

[0034] 12d: Barrier area

[0035] 13d: Gap

[0036] 1e: Piezoelectric actuator layer

[0037] 11e: Actuation area

[0038] 1f: Isolation layer

[0039] 11f: Gap wall

[0040] 1g: Second metal layer

[0041] 11g: Pad isolation area

[0042] 12g: Upper electrode area

[0043] 13g: Upper electrode pad

[0044] 14g: Lower electrode pad

[0045] 1h: Waterproof layer

[0046] 1i: Second substrate

[0047] 1j: Thin film adhesive layer

[0048] 1k: Inlet layer

[0049] 1m: Resonance layer

[0050] 11m: Cavity through hole

[0051] 12m: Movable part

[0052] 13m: Fixed part

[0053] 1n: Mask layer

[0054] 11n: Mask opening

[0055] 12n: Mask hole

[0056] 13n: First mask through-hole

[0057] 14n: Second mask through-hole

[0058] 1o, 1o'": Array hole plate

[0059] 11o: Hole in the plate

[0060] 12o, 12o'": Alignment hole

[0061] 13o'": Bracket part

[0062] AM1: First bonding alignment mark

[0063] AM2: Second bonding alignment mark

[0064] AW: Bonding alignment mark window

[0065] C1: Inflow chamber

[0066] C2: Resonance chamber

[0067] C3: Flow storage chamber

[0068] I: Fluid inlet

[0069] M1: First photoresist layer

[0070] M1a: First photoresist area

[0071] M2: Second photoresist layer

[0072] M2a: Second photoresist hole

[0073] M2b: Second photoresist opening

[0074] M3: Flow channel layer

[0075] M31: Flow channel inlet

[0076] M32: Cavity opening

[0077] M33: Inflow channel

[0078] M4: Third photoresist layer

[0079] M41: Third photoresist opening

[0080] P, P'": positioning posts Detailed implementation manners

[0081] Some typical embodiments embodying the features and advantages of the present case will be described in detail in the following description. It should be understood that the present case can have various variations in different aspects, all of which do not depart from the scope of the present case, and the descriptions and illustrations therein are for illustrative purposes in essence and not for limiting the present case.

[0082] The microfluidic actuator of the present case is used to transport fluids. Please refer to Figure 1A and Figure 1B , in the embodiment of the present case, the microfluidic actuator 100 includes: a first substrate 1a, a cavity layer 1b, a vibration layer 1c, a first metal layer 1d, a piezoelectric actuation layer 1e, an isolation layer 1f, a second metal layer 1g, a waterproof layer 1h, a second substrate 1i, a thin film adhesive layer 1j, an inlet layer 1k, a resonance layer 1m, a mask layer 1n, an array hole sheet 1o, a first photoresist layer M1, a second photoresist layer M2, a flow channel layer M3, and a third photoresist layer M4. The array hole sheet 1o, the first substrate 1a, the cavity layer 1b, the vibration layer 1c, the first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1f, the second metal layer 1g, the waterproof layer 1h, the second photoresist layer M2, the resonance layer 1m, the flow channel layer M3, and the inlet layer 1k are stacked and combined in sequence to form an integral body, and its manufacturing process is described as follows. In the first embodiment of the present case, the microfluidic actuator 100 includes an actuation unit 10.

[0083] Please refer to Figure 2A , in the first embodiment of the present case, the first substrate 1a is a silicon substrate. The first substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11a. In the first embodiment of the present case, the cavity layer 1b is formed on the first surface 11a of the first substrate 1a through a silicon dioxide material deposition process, and the deposition process can be a physical vapor deposition process (PVD), a chemical vapor deposition process (CVD), or a combination of both, but is not limited thereto. In the first embodiment of the present case, the vibration layer 1c is formed on the cavity layer 1b through a silicon nitride material deposition process.

[0084] Please refer to Figure 2B and Figure 3, in the first embodiment of this case, the vibration layer 1c forms a plurality of fluid grooves 11c and a vibration area 12c through an etching process. The fluid grooves 11c are symmetrically formed on opposite sides of the vibration layer 1c to define the vibration area 12c. It should be noted that, in the first embodiment of this case, the etching process can be a wet etching process, a dry etching process, or a combination of both, but is not limited thereto. It should be noted that, in the first embodiment of this case, the vibration layer 1c has two fluid grooves 11c, which are respectively formed on opposite sides in the longitudinal direction of the vibration layer 1c, but is not limited thereto.

[0085] Please refer to Figure 2C and Figure 2D , in the first embodiment of this case, the first metal layer 1d is formed on the vibration layer 1c through a first metal material deposition process. In the embodiment of this case, the first metal material is a titanium nitride metal material or a tantalum metal material, but is not limited thereto. The first metal layer 1d forms a lower electrode area 11d, a plurality of barrier areas 12d, a plurality of gaps 13d, and a plurality of first bonding alignment marks AM1 through an etching process. The lower electrode area 11d is formed at a position corresponding to the vibration area 12c of the vibration layer 1c. The gaps 13d are formed between the lower electrode area 11d and the barrier areas 12d. The barrier areas 12d are correspondingly formed at the outer positions of the fluid grooves 11c of the vibration layer 1c. The first bonding alignment marks AM1 are formed on the barrier areas 12d.

[0086] Please refer to Figure 2E and Figure 2F , in the first embodiment of this case, the piezoelectric actuation layer 1e is formed on the first metal layer 1d through a piezoelectric material deposition process, and an actuation area 11e is formed at a position corresponding to the lower electrode area 11d of the first metal layer 1d through an etching process.

[0087] Please refer to Figure 2G and Figure 2H , in the first embodiment of this case, the isolation layer 1f is formed on the first metal layer 1d and the piezoelectric actuation layer 1e through a silicon dioxide material deposition process, and a plurality of gap walls 11f are formed in the gaps 13d of the first metal layer 1d through an etching process.

[0088] Please refer to Figure 2I and Figure 2J, in the first embodiment of this case, the first photoresist layer M1 is formed on the first metal layer 1d, the piezoelectric actuator layer 1e, and the isolation layer 1f through a photoresist coating process, and a first photoresist region M1a is formed through a developing process. It should be noted that the photoresist coating process can be a spin coating process or a laminate rolling process, but is not limited thereto, and can be changed according to the process requirements. In the first embodiment of this case, the first photoresist layer M1 is a negative photoresist, but is not limited thereto.

[0089] Please refer to Figure 2K , Figure 2L and Figure 3 , in the first embodiment of this case, the second metal layer 1g is formed on the first metal layer 1d, the piezoelectric actuator layer 1e, the isolation layer 1f, and the first photoresist region M1a of the first photoresist layer M1 through a second metal material deposition process. In the first embodiment of this case, the second metal material is a gold metal material or an aluminum metal material, but is not limited thereto. The second metal layer 1g removes the first photoresist layer M1 through a lift-off process, thereby forming a pad isolation region 11g, an upper electrode region 12g, an upper electrode pad 13g, and a lower electrode pad 14g. The upper electrode region 12g is formed on the actuation region 11e of the piezoelectric actuator layer 1e. The upper electrode pad 13g and the lower electrode pad 14g are formed on the first metal layer 1d and are located on opposite sides of the actuation region 11e of the piezoelectric actuator layer 1e. The upper electrode region 12g and the lower electrode pad 14g are separated by the pad isolation region 11g.

[0090] Please refer to Figure 2M , in the first embodiment of this case, the waterproof layer 1h is formed on the first metal layer 1d, the second metal layer 1g, and the isolation layer 1f through a coating process, and the upper electrode pad 13g and the lower electrode pad 14g of the second metal layer 1g are exposed through an etching process. It should be noted that in the first embodiment of this case, the waterproof layer 1h is made of parylene, but is not limited thereto. Parylene can be coated at room temperature and has the advantages of strong coating ability, high chemical resistance, and good biocompatibility. It should be noted that the setting of the waterproof layer 1h can prevent the first metal layer 1d, the piezoelectric actuator layer 1e, and the second metal layer 1g from being corroded by fluid and causing a short circuit phenomenon.

[0091] Please refer to Figure 2N and Figure 2O , in the first embodiment of this case, the second photoresist layer M2 is formed on the first metal layer 1d, the second metal layer 1g, and the waterproof layer 1h through a photoresist coating process, and a plurality of second photoresist holes M2a and a second photoresist opening M2b are formed through a developing process.

[0092] Please refer toFigure 2P , Figure 2Q and Figure 4 , in the first embodiment of the present case, the second substrate 1i is a glass substrate. The thin film adhesive layer 1j is formed on the second substrate 1i through a rolling process. The inlet layer 1k is formed on the thin film adhesive layer 1j through a rolling process. In the first embodiment of the present case, the inlet layer 1k is made of polyimide (PI), but not limited thereto. The thin film adhesive layer 1j and the inlet layer 1k are formed with a plurality of fluid inlets I and a plurality of alignment mark windows AW through an etching process. The alignment mark windows AW are formed outside the fluid inlets I. It should be noted that the etching process for forming the fluid inlets I and the alignment mark windows AW is a dry etching process or a laser etching process, but not limited thereto. In the first embodiment of the present case, the microfluidic actuator 100 has four fluid inlets I, which are respectively located at the four corners of the microfluidic actuator 100. In other embodiments, the number and distribution of the fluid inlets I can vary according to design requirements.

[0093] Please refer to Figure 2R , Figure 2S and Figure 4 , in the first embodiment of the present case, the flow channel layer M3 is formed on the inlet layer 1k through a photoresist coating process, and a plurality of flow channel inlets M31, a cavity opening M32, and a plurality of inflow channels M33 are formed through a developing process. The flow channel inlets M31 are respectively communicated with the fluid inlets I of the inlet layer 1k. The flow channel inlets M31 and the inflow channels M33 are arranged around the cavity opening M32. The inflow channels M33 are communicated between the flow channel inlets M31 and the cavity opening M32. In the first embodiment of the present case, the flow channel layer M3 has four flow channel inlets M31 and four inflow channels M33. In other embodiments, the number of the flow channel inlets M31 and the inflow channels M33 can be changed according to design requirements, not limited thereto. In the first embodiment of the present case, the flow channel layer M3 is a thick film photoresist, but not limited thereto.

[0094] Please refer to Figure 2T and Figure 2U, in the first embodiment of this case, the resonance layer 1m is formed on the flow channel layer M3 through a rolling process, and a cavity through-hole 11m and a plurality of second alignment marks AM2 are formed through an etching process. The resonance layer 1m covers the cavity opening M32 of the flow channel layer M3, thereby defining an inflow chamber C1. The cavity through-hole 11m communicates with the inflow chamber C1 of the flow channel layer M3. The second alignment marks AM2 are formed on the outer side of the resonance layer 1m. The resonance layer 1m extends outward from the cavity through-hole 11m to the outer edge of the corresponding inflow chamber C1 and is defined as a movable part 12m. The resonance layer 1m extends outward from the movable part 12m to the second alignment marks AM2 and is defined as a fixed part 13m. It should be noted that the etching process for forming the resonance layer 1m is a dry etching process or a laser etching process, but is not limited thereto.

[0095] Please refer to Figure 2V , in the first embodiment of this case, the resonance layer 1m is bonded to the second photoresist layer M2 through a flip alignment process and a wafer bonding process. During the flip alignment process, the bonding alignment mark window AW is aligned with the corresponding first alignment mark AM1 and the corresponding second alignment mark AM2 to complete the alignment process. It should be noted that in the first embodiment of this case, since the flow channel layer M3 and the second substrate 1i are light-transmissive, during the flip alignment process, manual alignment can be performed by the Top-Side Transparent Alignment method, so the alignment accuracy requirement is ±10μm. In the first embodiment of this case, the resonance layer 1m is made of a polyimide (PI) material, but is not limited thereto.

[0096] Please refer to Figure 2W , in the first embodiment of this case, the second substrate 1i is removed by soaking the thin film adhesive layer 1j in a chemical agent to make the thin film adhesive layer 1j lose its adhesiveness. It should be noted that in the first embodiment of this case, the time required to soak the thin film adhesive layer 1j is extremely short, and the material properties of the thin film adhesive layer 1j and the flow channel layer M3 are different, so the chemical agent will not react with the flow channel layer M3 and will not cause a swelling problem.

[0097] Please refer to Figures 2X to 2Z, in the first embodiment of this case, the mask layer 1n is formed on the second surface 12a of the first substrate 1a through a silicon dioxide material deposition process, and a mask opening 11n and a plurality of mask holes 12n are formed through an etching process, so that the first substrate 1a is exposed. The second surface 12a of the first substrate 1a forms an outlet trench 13a and a plurality of auxiliary trenches 14a respectively along the mask opening 11n and the mask holes 12n through an etching process. The outlet trench 13a and the auxiliary trenches 14a have the same etching depth, and the etching depth is etched between the first surface 11a and the second surface 12a and does not contact the cavity layer 1b. The auxiliary trenches 14a are symmetrically arranged on opposite sides of the outlet trench 13a. A positioning post P is formed between each auxiliary trench 14a and the outlet trench 13a.

[0098] Please refer to Figure 2AA and Figure 2AB , in the first embodiment of this case, the mask layer 1n is further formed in the outlet trench 13a and the auxiliary trenches 14a of the first substrate 1a through a silicon dioxide material deposition process, and a plurality of first mask through-holes 13n and a plurality of second mask through-holes 14n are formed in the outlet trench 13a through a precision drilling process. The second mask through-holes 14n are symmetrically arranged outside the first mask through-holes 13n. In the first embodiment of this case, the aperture of the first mask through-hole 13n is smaller than the aperture of the second mask through-hole 14n, but not limited thereto. The drilling depth of the first mask through-hole 13n and the second mask through-hole 14n is until it contacts the first substrate 1a, so that the first substrate 1a can be exposed. In the first embodiment of this case, the precision drilling process is an excimer laser processing process, but not limited thereto.

[0099] Please refer to Figure 2AC , Figure 2AD and Figure 5 , in the first embodiment of this case, the first substrate 1a etches the part of the first substrate 1a corresponding to the first mask through-hole 13n and the second mask through-hole 14n through a low-temperature deep etching process, so as to form a plurality of first outflow holes 15a and a plurality of second outflow holes 16a of the first substrate 1a. The first outflow holes 15a are respectively formed by etching along the first mask through-hole 13n until it contacts the cavity layer 1b, and the second outflow holes 16a are respectively formed by etching along the second mask through-hole 14n until it contacts the cavity layer 1b. Thus, the second outflow holes 16a are arranged outside the first outflow holes 15a, and the aperture of each second outflow hole 16a is larger than the aperture of each first outflow hole 15a. In the first embodiment of this case, the low-temperature deep etching process is a deep reactive ion etching process (BOSCH Process), but not limited thereto. In the first embodiment of this case, each first outflow hole 15a and each second outflow hole 16a have a square cross-section, but not limited thereto.

[0100] It should be noted that, in the first embodiment of this case, the mask layer 1n uses an excimer laser processing process to form the first mask through-hole 13n and the second mask through-hole 14n to overcome problems such as difficult photoresist coating and difficult focusing in contact photomask exposure. In addition, in the first embodiment of this case, the deep reactive ion etching process (BOSCH Process) is a low-temperature process, which can avoid the high temperature generated during processing from affecting the polarization distribution of the backend piezoelectric material and causing depolarization reaction. Furthermore, in the first embodiment of this case, the through-holes formed by the deep reactive ion etching process (BOSCH Process) have a high aspect ratio. Therefore, the etching depth of the through-holes is preferably 100 μm, so that the aperture of the through-holes can reach less than 10 μm, thereby maintaining the strength of the structure. In the first embodiment of this case, the setting of the outlet groove 13a enables the through-holes formed by the deep reactive ion etching process (BOSCH Process) to be reduced.

[0101] Please refer to Figure 2AD , in the first embodiment of this case, the cavity layer 1b is further etched internally by a wet etching process to form a flow storage chamber C3. That is, the etching solution flows in through the first mask through-hole 13n and the second mask through-hole 14n, flows to the cavity layer 1b through the first outflow hole 15a and the second outflow hole 16a, and then etches and removes a part of the cavity layer 1b to define the flow storage chamber C3. Thereby, the flow storage chamber C3 is communicated with the first outflow hole 15a and the second outflow hole 16a. It should be noted that while the flow storage chamber C3 is formed by the wet etching process, the mask layer 1n will also be removed together. After the formation of the flow storage chamber C3 and the removal of the mask layer 1n are completed, the first outflow hole 15a and the second outflow hole 16a are communicated with the outlet groove 13a.

[0102] It should be noted that, in the first embodiment of this case, since the distance between the two sides around the flow storage chamber C3 is slightly greater than the distance between the two sides of the outlet groove 13a, the setting that the aperture of each second outflow hole 16a is larger than the aperture of each first outflow hole 15a is beneficial to the side etching of the cavity of the flow storage chamber C3.

[0103] Please refer to Figures 2AE to 2AG, in the first embodiment of this case, the third photoresist layer M4 is formed on the entrance layer 1k through a rolling process, and a plurality of third photoresist openings M41 are formed through a developing process. The third photoresist openings M41 are provided corresponding to the positions of the upper electrode pad 13g and the lower electrode pad 14g. The structures on the upper electrode pad 13g and the lower electrode pad 14g are removed through an etching process, so that the upper electrode pad 13g and the lower electrode pad 14g are exposed. In the first embodiment of this case, the third photoresist layer M4 is a hard mask dry film photoresist, but not limited thereto. It should be noted that, in order to avoid insufficient structural support force after the first substrate 1a is etched, the coating of the third photoresist layer M4 can also be carried out first after the wafer bonding process of the resonance layer 1m and the second photoresist layer M2, but not limited thereto.

[0104] Please refer to Figure 2AH and Figure 5 , in the first embodiment of this case, the array orifice plate 1o has a plurality of orifice holes 11o and a plurality of positioning holes 12o, and is attached to the outlet groove 13a and the auxiliary groove 14 of the first substrate 1a through a pasting process. The orifice holes 11o are arranged in a staggered manner with the first outflow hole 15a and the second outflow hole 16a, thereby closing the first outflow hole 15a and the second outflow hole 16a to form a one-way valve to avoid the phenomenon of fluid backflow during fluid transmission. The positioning posts P of the first substrate 1a respectively pass through the positioning holes 12o. In the first embodiment of this case, the arrangement of the positioning posts P of the first substrate 1a enables manual positioning when pasting the array orifice plate 1o, and is fixed by gluing. In other embodiments, the array orifice plate 1o can be positioned by an optical automatic alignment method, so that the density of the orifice holes 11o of the array orifice plate 1o and the first outflow hole 15a and the second outflow hole 16a of the first substrate 1a can be increased. In the first embodiment of this case, the aperture of each positioning hole 12o is 50μm larger than the aperture of each positioning post P, but not limited thereto. In the first embodiment of this case, the array orifice plate 1o is made of a polyimide (PI) material, but not limited thereto. In the first embodiment of this case, the array orifice plate 1o has two positioning holes 12o. In other embodiments, the number of positioning holes 12o can be changed according to design requirements, not limited thereto.

[0105] Please refer to Figure 3 , it should be noted that, in the first embodiment of this case, the two fluid grooves 11c of the vibration layer 1c are respectively formed on the opposite sides in the longitudinal direction of the vibration layer 1c. In this way, with the lateral support of the vibration layer 1c, the vibration layer 1c can have a better deformation amount in the longitudinal direction.

[0106] Please refer to Figure 1A , Figure 1B , Figures 6A to 6EIn the first embodiment of the present case, the specific actuation method of the microfluidic actuator 100 is to provide driving power with different phase charges to the upper electrode pad 13g and the lower electrode pad 14g to drive and control the vibration area 12c of the vibration layer 1c to produce up and down displacement. Figure 1A as well as Figure 6A As shown, when a negative voltage is applied to the upper electrode pad 13g and a positive voltage is applied to the lower electrode pad 14g, the actuating area 11e of the piezoelectric actuating layer 1e drives the vibration area 12c of the vibration layer 1c to move toward the direction close to the first substrate 1a. Thus, the external fluid is sucked into the microfluidic actuator 100 through the fluid inlet I, and the fluid entering the microfluidic actuator 100 then flows to the inlet chamber C1 through the flow channel inlet M31 and the inlet channel M33 of the flow channel layer M3 in sequence, and then flows to the inner resonance chamber C2 through the cavity through hole 11m of the resonance layer 1m. Figure 1A as well as Figure 6B As shown, stop applying voltage to the upper electrode pad 13g and the lower electrode pad 14g, so that the actuating area 11e of the piezoelectric actuating layer 1e drives the vibration area 12c of the vibration layer 1c to return to the unactuated position. At this time, the movable part 12m of the resonance layer 1m is displaced due to resonance, displaced toward the direction close to the first substrate 1a and attached to the waterproof layer 1h, so that the cavity through hole 11m of the resonance layer 1m is not connected to the resonance chamber C2. Thereby, the fluid in the resonance chamber C2 is squeezed and converged into the fluid storage chamber C3 of the cavity layer 1b through the fluid groove 11c of the vibration layer 1c. As shown Figure 1A as well as Figure 6C As shown, the electrical properties of the upper electrode pad 13g and the lower electrode pad 14g are then switched, and a positive voltage is applied to the upper electrode pad 13g and a negative voltage is applied to the lower electrode pad 14g, so that the vibration area 12c of the vibration layer 1c is displaced in a direction away from the first substrate 1a, and the movable part 12m of the resonance layer 1m is restored to the position when no resonance displacement occurs, so that the volume of the resonance chamber C2 is compressed by the vibration layer 1c, causing the fluid collected in the storage chamber C3 to begin to flow into the first outflow hole 15a and the second outflow hole 16a. Figure 1A as well as Figure 6D As shown, stop applying voltage to the upper electrode pad 13g and the lower electrode pad 14g, so that the actuating area 11e of the piezoelectric actuating layer 1e drives the vibration area 12c of the vibration layer 1c to return to the unactuated position. At this time, the movable part 12m of the resonance layer 1m is displaced due to resonance, displaced in a direction away from the first substrate 1a and attached to the inlet layer 1k, so that the cavity through hole 11m of the resonance layer 1m is not connected to the inlet chamber C1. Thereby, the fluid in the storage chamber C3 is squeezed and passes through the first outflow hole 15a and the second outflow hole 16a, and then pushes open the array hole plate 1o. As shown Figure 1A as well as Figure 6EAs shown, when the movable part 12m of the resonance layer 1m stops resonating and returns to the position where no resonance displacement occurs, the fluid passes through the apertures 11o of the array aperture plate 1o and is discharged outside the microfluidic actuator 100 to complete the fluid transmission.

[0107] Please refer to Figure 7A , the second embodiment of this case is substantially the same as the first embodiment, except that the microfluidic actuator 100' includes two actuator units 10 to increase the flow rate output.

[0108] Please refer to Figure 7B , in other embodiments of this case, the microfluidic actuator 100" includes a plurality of actuator units 10. The plurality of actuator units 10 can be arranged in series, parallel, or series-parallel to increase the flow rate output. The arrangement of the plurality of actuator units 10 can be designed according to the usage requirements and is not limited thereto.

[0109] Please refer to Figure 8 , the third embodiment of this case is substantially the same as the first embodiment, except that the positioning posts P'" of the microfluidic actuator 100'" and the positioning holes 12o'" of the array aperture plate 1o'" are symmetrically arranged at opposite corners of the first substrate 1a"', and each first outflow hole 15a'" and each second outflow hole 16a'" have a circular cross-section. In addition, the array aperture plate 1o'" has a bracket portion 13o'" to increase the deflection amount of the array aperture plate 1o'" to achieve the effect of a spring. In the third embodiment of this case, the array aperture plate 1o'" can be used to filter impurities in the fluid and increase the reliability and service life of the components in the microfluidic actuator 100'".

[0110] Please refer to Figures 9A to 9C , the fourth embodiment of this case is substantially the same as the first embodiment, except that the flipping alignment process and the wafer bonding process are different. Due to the large difference in heat conduction between the first substrate 1a and the second substrate 1i, and the problems of thermal stress and voids easily occurring in the wafer bonding process, therefore, the first substrate 1a, the cavity layer 1b, the vibration layer 1c, the first metal layer 1d, the piezoelectric actuator layer 1e, the isolation layer 1f, the second metal layer 1g, the waterproof layer 1h, the second photoresist layer M2, and the resonance layer 1m are first formed into a single semi-finished product, and then the rolling and developing processes are performed on the inlet layer 1k to form the flow channel layer M3. Finally, the inlet layer 1k and the flow channel layer M3 are flipped and optically double-aligned with the aforementioned single semi-finished product in a flip chip manner to complete the bonding. In addition, in order to reduce the possibility of brittle cracking of the first substrate 1a after the etching process, the bonding surface can be first subjected to an activation treatment to reduce the pressure during thermal pressing. In the fourth embodiment of this case, the inlet layer 1k is made of electroforming or stainless steel to increase the rigidity of the inlet layer 1k, but is not limited thereto.

[0111] This case provides a microfluidic actuator, which is mainly a microfluidic actuator completed by a microelectromechanical process. By applying a driving power source with different phase charges to the upper electrode pad and the lower electrode pad, the vibration area of the vibration layer generates an up-and-down displacement, thereby achieving fluid transmission. In addition, by attaching a burst hole sheet to the outflow hole as a one-way valve to avoid fluid backflow, it has great industrial utilization value and is filed for application according to law.

[0112] This case can be modified by those who are familiar with this technology, but all modifications do not exceed the scope of protection as claimed in the appended patent application.

Claims

1. A microfluidic actuator, characterized in that, it comprises: a substrate having a first surface and a second surface, with an outlet groove, a plurality of first outflow holes and a plurality of second outflow holes formed through an etching process, the outlet groove communicating with the plurality of first outflow holes and the plurality of second outflow holes, and the plurality of second outflow holes being disposed outside the plurality of first outflow holes; a cavity layer formed on the first surface of the substrate through a deposition process and having a fluid storage chamber formed through an etching process, the fluid storage chamber communicating with the plurality of first outflow holes and the plurality of second outflow holes; a vibration layer formed on the cavity layer through a deposition process and having a plurality of fluid grooves and a vibration region formed through an etching process, the plurality of fluid grooves being symmetrically formed on opposite sides of the vibration layer to thereby define the vibration region; a first metal layer formed on the vibration layer through a deposition process and having a lower electrode region, a plurality of barrier regions and a plurality of gaps formed through an etching process, the lower electrode region being formed at a position corresponding to the vibration region, the plurality of gaps being formed between the lower electrode region and the plurality of barrier regions, and the plurality of barrier regions being correspondingly formed at positions outside the plurality of fluid grooves; a piezoelectric actuation layer formed on the first metal layer through a deposition process and having an actuation region formed through an etching process at a position corresponding to the lower electrode region of the first metal layer; an isolation layer formed on the piezoelectric actuation layer and the first metal layer through a deposition process and having a plurality of gap walls formed through an etching process within the plurality of gaps; a second metal layer formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process and having an upper electrode pad and a lower electrode pad formed through an etching process on the first metal layer; a waterproof layer formed on the first metal layer, the second metal layer and the isolation layer through a coating process and having the upper electrode pad and the lower electrode pad exposed through an etching process; a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer through a developing process; an inlet layer having a plurality of fluid inlets formed through an etching process or a laser process; a flow channel layer formed on the inlet layer and having an inflow chamber, a plurality of inflow channels and a plurality of flow channel inlets formed through a photolithography process, the plurality of flow channel inlets respectively communicating with the plurality of fluid inlets of the inlet layer, the plurality of inflow channels and the plurality of flow channel inlets being disposed around the inflow chamber, and the plurality of inflow channels communicating between the plurality of flow channel inlets and the inflow chamber; a resonance layer formed on the flow channel layer through a rolling process, having a cavity through-hole formed through an etching process, and being bonded to the photoresist layer through a flipping alignment process and a wafer bonding process; and an array hole sheet formed on the substrate through a pasting process, the array hole sheet having a plurality of hole sheet holes, the plurality of hole sheet holes being misaligned with the plurality of first outflow holes and the plurality of second outflow holes to thereby close the plurality of first outflow holes and the plurality of second outflow holes of the first substrate; Among them, a driving power source with different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the up and down displacement of the vibration area of the vibration layer, so that the fluid is sucked in from the plurality of fluid inlets, flows through the plurality of inflow channels to the inflow chamber, then flows through the cavity through-hole to the resonance chamber, flows through the plurality of fluid grooves to the fluid storage chamber, and finally is extruded and discharged from the plurality of hole plate holes after passing through the plurality of first outflow holes and the plurality of second outflow holes and pushing open the array hole plate to complete fluid transmission.

2. The microfluidic actuator according to claim 1, characterized in that, the upper electrode pad and the lower electrode pad are respectively formed on opposite sides of the piezoelectric actuator layer.

3. The microfluidic actuator according to claim 1, characterized in that, each of the second outflow holes has a hole diameter larger than that of each of the first outflow holes.

4. The microfluidic actuator according to claim 1, characterized in that, the substrate forms a plurality of auxiliary grooves through an etching process, which are symmetrically formed on opposite sides of the outlet groove.

5. The microfluidic actuator according to claim 4, characterized in that, a positioning post is formed between each of the auxiliary grooves and the outlet groove, and the positioning post is used to position the array hole plate.

6. The microfluidic actuator according to claim 1, characterized in that, the substrate is a silicon substrate.

7. The microfluidic actuator according to claim 1, characterized in that, the cavity layer is a silica material.

8. The microfluidic actuator according to claim 1, characterized in that, the vibration layer is a silicon nitride material.

9. The microfluidic actuator according to claim 1, characterized in that, the first metal layer is a titanium nitride metal material.

10. The microfluidic actuator according to claim 1, characterized in that, the first metal layer is a tantalum metal material.

11. The microfluidic actuator according to claim 1, characterized in that, the isolation layer is a silica material.

12. The microfluidic actuator according to claim 1, characterized in that, the second metal layer is a gold metal material.

13. The microfluidic actuator according to claim 1, characterized in that, the second metal layer is an aluminum metal material.

14. The microfluidic actuator according to claim 1, characterized in that, the substrate forms the plurality of first outflow holes and the plurality of second outflow holes through a deep reactive ion etching process.

15. The microfluidic actuator according to claim 1, characterized in that, the cavity layer forms the fluid storage chamber through a wet etching process.

16. The microfluidic actuator according to claim 1, characterized in that, the photoresist layer is a thick film photoresist.

17. The microfluidic actuator according to claim 1, characterized in that, the resonance layer forms the cavity through-hole through a dry etching process.

18. The microfluidic actuator according to claim 1, characterized in that, the resonance layer forms the cavity through-hole through a laser etching process.

19. The microfluidic actuator according to claim 1, characterized in that, Apply a positive voltage to the upper electrode pad and a negative voltage to the lower electrode pad, such that the actuating region of the piezoelectric actuating layer drives the vibrating region of the vibrating layer to displace away from the substrate.

20. The microfluidic actuator according to claim 1, wherein, Apply a negative voltage to the upper electrode pad and a positive voltage to the lower electrode pad, such that the actuating region of the piezoelectric actuating layer drives the vibrating region of the vibrating layer to displace towards the substrate.

21. The microfluidic actuator according to claim 1, characterized in that: Apply a negative voltage to the upper electrode pad and a positive voltage to the lower electrode pad, such that the actuating region of the piezoelectric actuating layer drives the vibrating region of the vibrating layer to displace towards the substrate. Thereby, an external fluid is sucked into the microfluidic actuator through the plurality of fluid inlets, and the fluid entering the microfluidic actuator sequentially flows through the plurality of inflow channels to the inflow chamber, then through the cavity through-holes to the resonance chamber, and finally is collected in the fluid storage chamber through the plurality of fluid grooves; and Convert the electrical properties of the upper electrode pad and the lower electrode pad, apply a positive voltage to the upper electrode pad and a negative voltage to the lower electrode pad. Thus, the vibrating region of the vibrating layer displaces away from the substrate, causing the fluid collected in the fluid storage chamber to sequentially pass through the plurality of first outflow holes and the plurality of second outflow holes and then be discharged out of the microfluidic actuator through the plurality of orifice holes, completing the fluid transfer.

22. A microfluidic actuator, characterized in that, comprises a plurality of actuating units, and each actuating unit comprises: a substrate having a first surface and a second surface, and an outlet groove, a plurality of first outflow holes and a plurality of second outflow holes are formed through an etching process. The outlet groove is in communication with the plurality of first outflow holes and the plurality of second outflow holes, and the plurality of second outflow holes are disposed outside the plurality of first outflow holes; a cavity layer formed on the first surface of the substrate through a deposition process, and a fluid storage chamber is formed through an etching process. The fluid storage chamber is in communication with the plurality of first outflow holes and the plurality of second outflow holes; a vibrating layer formed on the cavity layer through a deposition process, and a plurality of fluid grooves and a vibrating region are formed through an etching process. The plurality of fluid grooves are symmetrically formed on opposite sides of the vibrating layer, thereby defining the vibrating region; a first metal layer formed on the vibrating layer through a deposition process, and a lower electrode region, a plurality of barrier regions and a plurality of gaps are formed through an etching process. The lower electrode region is formed at a position corresponding to the vibrating region, the plurality of gaps are formed between the lower electrode region and the plurality of barrier regions, and the plurality of barrier regions are correspondingly formed at positions outside the plurality of fluid grooves; a piezoelectric actuating layer formed on the first metal layer through a deposition process, and an actuating region is formed through an etching process at a position corresponding to the lower electrode region of the first metal layer; an isolation layer formed on the piezoelectric actuating layer and the first metal layer through a deposition process, and a plurality of gap walls are formed through an etching process in the plurality of gaps; A second metal layer is formed on the piezoelectric actuator layer, the first metal layer, and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process; A waterproof layer is formed on the first metal layer, the second metal layer, and the isolation layer through a coating process, and the upper electrode pad and the lower electrode pad are exposed through an etching process; A photoresist layer is formed on the first metal layer, the second metal layer, and the waterproof layer through a developing process; An inlet layer forms a plurality of fluid inlets through an etching process or a laser process; A flow channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels, and a plurality of flow channel inlets are formed through a photolithography process. The plurality of flow channel inlets are respectively connected to the plurality of fluid inlets of the inlet layer. The plurality of inflow channels and the plurality of flow channel inlets are disposed around the inflow chamber, and the plurality of inflow channels communicate between the plurality of flow channel inlets and the inflow chamber; A resonance layer is formed on the flow channel layer through a rolling process, a cavity through-hole is formed through an etching process, and is bonded to the photoresist layer through a flipping alignment process and a wafer bonding process; and An array hole sheet is formed on the substrate through a pasting process. The array hole sheet has a plurality of hole sheet holes, and the plurality of hole sheet holes are misaligned with the plurality of first outflow holes and the plurality of second outflow holes, thereby closing the plurality of first outflow holes and the plurality of second outflow holes of the first substrate; Wherein, a driving power source with different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to generate an up-and-down displacement, so that the fluid is sucked in from the plurality of fluid inlets, flows through the plurality of inflow channels to the inflow chamber, then flows through the cavity through-hole to the resonance chamber, flows through the plurality of fluid grooves to the storage chamber, and finally is extruded and discharged from the plurality of hole sheet holes after passing through the plurality of first outflow holes and the plurality of second outflow holes and pushing open the array hole sheet to complete fluid transmission; and Wherein, the plurality of actuating units are connected in series, parallel, or series-parallel to increase the fluid transmission flow rate.

23. A microfluidic actuator, Characterized in that, Comprising: A substrate having a first surface and a second surface, at least one outlet groove, a plurality of first outflow holes, and a plurality of second outflow holes are formed through an etching process, and the at least one outlet groove communicates with the plurality of first outflow holes and the plurality of second outflow holes; A cavity layer is formed on the first surface of the substrate through a deposition process, and at least one storage chamber is formed through an etching process. The at least one storage chamber communicates with the plurality of first outflow holes and the plurality of second outflow holes; A vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and at least one vibration region are formed through an etching process. The plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer to define the at least one vibration region; A first metal layer is formed on the vibrating layer through a deposition process, and at least one lower electrode region, a plurality of barrier regions, and a plurality of gaps are formed through an etching process. The at least one lower electrode region is formed at a position corresponding to the at least one vibrating region, and the plurality of gaps are formed between the at least one lower electrode region and the plurality of barrier regions; A piezoelectric actuating layer is formed on the first metal layer through a deposition process, and at least one actuating region is formed at a position corresponding to the at least one lower electrode region of the first metal layer through an etching process; An isolation layer is formed on the piezoelectric actuating layer and the first metal layer through a deposition process, and a plurality of gap walls are formed in the plurality of gaps through an etching process; A second metal layer is formed on the piezoelectric actuating layer, the first metal layer, and the isolation layer through a deposition process, and at least one upper electrode pad and at least one lower electrode pad are formed on the first metal layer through an etching process; A waterproof layer is formed on the first metal layer, the second metal layer, and the isolation layer through a coating process, and the at least one upper electrode pad and the at least one lower electrode pad are exposed through an etching process; A photoresist layer is formed on the first metal layer, the second metal layer, and the waterproof layer through a developing process; An inlet layer forms a plurality of fluid inlets through an etching process or a laser process; A flow channel layer is formed on the inlet layer, and at least one inflow chamber, a plurality of inflow channels, and a plurality of flow channel inlets are formed through a photolithography process. The plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer. The plurality of inflow channels and the plurality of flow channel inlets are disposed around the at least one inflow chamber, and the plurality of inflow channels are communicated between the plurality of flow channel inlets and the at least one inflow chamber; A resonance layer is formed on the flow channel layer through a rolling process, at least one cavity through hole is formed through an etching process, and is bonded to the photoresist layer through a flipping alignment process and a wafer bonding process; and An array hole sheet is formed on the substrate through a pasting process. The array hole sheet has a plurality of hole sheet holes, and the plurality of hole sheet holes are misaligned with the plurality of first outflow holes and the plurality of second outflow holes, thereby closing the plurality of first outflow holes and the plurality of second outflow holes of the first substrate; Wherein, driving power supplies with different phase charges are provided to the at least one upper electrode pad and the at least one lower electrode pad to drive and control the at least one vibrating region of the vibrating layer to generate up and down displacements, so that fluid is inhaled from the plurality of fluid inlets, flows through the plurality of inflow channels to the at least one inflow chamber, then flows through the at least one cavity through hole to the at least one resonance chamber, flows through the plurality of fluid grooves to the at least one storage chamber, and finally is extruded and discharged from the plurality of hole sheet holes after passing through the plurality of first outflow holes and the plurality of second outflow holes and pushing open the array hole sheet to complete fluid transmission.

Images