Semiconductor device manufacturing equipment

Abstract

A semiconductor device manufacturing apparatus is provided. The semiconductor device manufacturing apparatus includes: a spinner configured to hold a wafer; a nozzle configured to supply a liquid chemical onto an upper surface of the wafer; and a laser module configured to heat the wafer by irradiating a laser beam onto a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2019-0013644, filed on February 1, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a semiconductor device manufacturing apparatus, for example, a wafer cleaning apparatus or a wafer etching apparatus, and a method of manufacturing a semiconductor device using the same. Background Art

[0003] The wet cleaning process used in the semiconductor manufacturing process is a process of etching, for example, using a hard mask on a wafer and using a high-temperature liquid chemical. In the conventional method, the wet cleaning process is performed by a batch-type apparatus. A batch-type apparatus is an apparatus that wet-cleans a group of wafers by simultaneously immersing the group of wafers in a liquid chemical rather than a single wafer.

[0004] The batch-type apparatus causes problems such as flow defects, poor drying, and poor dispersion uniformity in the wafers. To solve these problems, a shift to a single-type apparatus has been considered / called for. A single-type apparatus is an apparatus that applies the wet cleaning process to each wafer one by one.

[0005] However, even in a single-type apparatus, depending on the position of a wafer, the dispersion of the etching rate may not be uniform enough. Therefore, there is a need to develop a wafer cleaning / etching apparatus that can achieve uniform dispersion of the etching rate according to the position of the wafer. Summary of the Invention

[0006] Aspects of the present disclosure provide a wafer etching / cleaning apparatus capable of achieving uniform dispersion of the etching rate.

[0007] Aspects of the present disclosure also provide a wafer etching / cleaning method for achieving uniform dispersion of the etching rate.

[0008] However, the inventive concept is not limited to the embodiments set forth herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0009] According to an exemplary embodiment of the inventive concept, there is provided a semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus includes: a spinner configured to hold a wafer; a nozzle configured to supply a liquid chemical onto an upper surface of the wafer; and a laser module configured to heat the wafer by irradiating a laser beam onto a lower surface of the wafer.

[0010] According to an exemplary embodiment of the inventive concept, there is provided a semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus includes: a spinner configured to hold a side surface of a wafer and configured to rotate together with the wafer; a nozzle configured to supply a liquid chemical onto an upper surface of the wafer; a housing spaced apart from the spinner; a cavity formed in the housing; a laser module disposed at a bottom of the cavity; the laser module configured to emit a laser beam passing through the cavity; a blocking film formed at the bottom of the cavity, the blocking film configured to block the laser beam; and a transparent window disposed at a top of the cavity, the transparent window configured to transmit the laser beam.

[0011] According to an exemplary embodiment of the inventive concept, there is provided a semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus includes: a cavity formed in a housing; a laser module configured to emit a laser beam; a chuck configured to hold a wafer; and a transparent window disposed at a top of the cavity to seal the cavity, the transparent window positioned to transmit the laser beam, wherein the transparent window is positioned adjacent to a lower surface of the wafer, and wherein the laser module is configured to heat the wafer by irradiating the laser beam onto an entire lower surface of the wafer.

[0012] According to an exemplary embodiment of the inventive concept, there is provided a method of manufacturing a semiconductor device. The method includes placing a wafer above a housing by holding the wafer using a spinner on a side surface of the wafer, supplying a liquid chemical onto the wafer, using the spinner to rotate the wafer to uniformly spread the liquid chemical on an upper surface of the wafer, and heating the wafer using a first laser beam emitted from a laser module disposed in the housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] These and / or other aspects will become apparent and more readily appreciated from the following description of embodiments, taken in conjunction with the accompanying drawings, in which:

[0014] Figure 1 is a cross-sectional view of a wafer cleaning / etching apparatus according to some embodiments;

[0015] Figure 2 is Figure 1 a detailed plan view of the wafer cleaning / etching apparatus of

[0016] Figure 3 is a diagram showing Figure 1 the operation of an aspherical lens of

[0017] Figure 4 is a diagram showing the operation of an aspherical lens of a wafer cleaning / etching apparatus according to some embodiments;

[0018] Figure 5 is a diagram showing Figure 1Graph of the laser type of the laser module;

[0019] Figure 6 Is a graph showing the laser type of the laser module of a wafer cleaning / etching apparatus according to some embodiments;

[0020] Figure 7 Is a cross-sectional view of a wafer cleaning / etching apparatus according to some embodiments;

[0021] Figure 8 Is a cross-sectional view of a wafer cleaning / etching apparatus according to some embodiments;

[0022] Figure 9 Is a cross-sectional view of a wafer cleaning / etching apparatus according to some embodiments;

[0023] Figure 10 Is a diagram showing Figure 9 The operation of the first rotor and the second rotor;

[0024] Figure 11 Is a block diagram of a wafer cleaning / etching apparatus and a cooling module according to some embodiments;

[0025] Figure 12 Is a flowchart showing a wafer cleaning / etching method according to some embodiments;

[0026] Figure 13 Is a detailed flowchart showing the heating operation of a wafer cleaning / etching method according to an embodiment; and

[0027] Figure 14 Is a detailed flowchart showing the heating operation of a wafer cleaning / etching method according to some embodiments. Detailed Description

[0028] Now, a wafer cleaning apparatus according to an embodiment will be described with reference to Figures 1 to 6 The wafer cleaning apparatus described in the present disclosure may be a wafer etching apparatus, and thus may be referred to as a "wafer cleaning / etching apparatus" or a "semiconductor device manufacturing apparatus". For example, the wafer cleaning apparatus may perform an etching process of forming a pattern on a wafer by using an etching chemical liquid. The wafer cleaning apparatus may also perform a cleaning process of maintaining the pattern formed on the wafer. The wafer cleaning process may perform the cleaning process by using water and / or a cleaning chemical liquid.

[0029] Figure 1 Is a cross-sectional view of a first wafer cleaning apparatus 10 according to some embodiments. Figure 2 Is Figure 1 A detailed plan view of the first wafer cleaning apparatus 10.

[0030] Referring to Figure 1 AndFigure 2 According to an embodiment, the first wafer cleaning apparatus 10 may include a housing 100, a first spinner 160, a nozzle 170, a bowl 180, a laser module 110, a hollow region 140, a reflector 130, and a transparent window 150. The hollow region 140 described herein may be a hollow formed by a space surrounded by a wall made of a solid structure.

[0031] The first direction X may be any one of the horizontal directions. The second direction Y may be any one of the horizontal directions different from the first direction X. The second direction Y may intersect the first direction X. For example, the second direction Y may be a direction perpendicular to the first direction X. The third direction Z may be a direction intersecting the first direction X and the second direction Y. For example, the third direction Z may be a direction perpendicular to both the first direction X and the second direction Y. The third direction Z may be, for example, a vertical direction. Thus, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other.

[0032] The housing 100 may be located below the wafer W. For example, the housing 100 and the wafer W may be arranged to be continuously spaced apart along the third direction Z. The housing 100 may heat and / or warm the wafer W, for example, the lower surface of the wafer W. The upper surface of the housing 100 may be adjacent to the lower surface of the wafer W. However, the housing 100 and the wafer W may not be in contact with each other. The wafer W described herein may be, for example, a semiconductor wafer such as a silicon wafer or a germanium wafer, or may be a substrate other than a semiconductor wafer.

[0033] It will be understood that when an element is referred to as being "connected" or "coupled" to another element or "on" another element, the element may be directly connected or coupled to the other element or directly on the other element or there may be an intermediate element. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, or as being "in contact" with another element or "contacting" another element, there is no intermediate element.

[0034] The laser module 110, the hollow region 140, the reflector 130, and the transparent window 150 may be included in the housing 100. For example, the laser module 110, the hollow region 140, the reflector 130, and the transparent window 150 may be provided inside the housing 100. The housing 100 may be used to fix and support the positions of the laser module 110, the hollow region 140, the reflector 130, and the transparent window 150.

[0035] The housing 100 can be fixed at a position below the wafer W. Thus, even if the wafer W rotates in the first rotation direction a1 or the second rotation direction a2, the housing 100 can remain non-rotating. However, the current embodiment is not limited to this case. In a wafer cleaning apparatus according to some embodiments, the housing 100 can also rotate together with the wafer W or can rotate independently.

[0036] The first rotator 160 can contact the side surface of the wafer W. The first rotator 160 can rotate the wafer W while holding the wafer W on the side surface of the wafer W. When the first rotator 160 rotates in the first rotation direction a1 or the second rotation direction a2, the wafer W can also rotate in the same direction.

[0037] When the wafer W rotates together with the first rotator 160, the liquid chemical 171 supplied onto the upper surface of the wafer W can be evenly spread over the upper surface of the wafer W. The rotation of the wafer W together with the first rotator 160 can help the upper surface of the wafer W to have a uniform etching rate.

[0038] The first rotator 160 can include a clamping portion 161 and a support portion 162. The clamping portion 161 can be the portion that contacts / touches the side surface of the wafer W. The clamping portion 161 can hold the wafer W by directly holding (e.g., contacting) the side surface of the wafer W. Thus, the clamping portion 161 can rotate together with the wafer W in the first rotation direction a1 or the second rotation direction a2. The clamping portion 161 described herein can be a fixture (grip) or a holder designed to hold or clamp the wafer W. The support portion 162 described herein can be a supporter designed to support, for example, the fixture or the holder from below the fixture or the holder. For example, the supporter can be combined with the fixture or the holder. In some embodiments, the clamping portion 161 and the support portion 162 of the first rotator 160 can be integrally formed.

[0039] The clamping portion 161 can include a heat insulating material. When the wafer W is heated and / or warmed by various elements (e.g., the laser module 110) in the housing 100, the clamping portion 161 can prevent the transfer of heat, thereby preventing thermal damage to other parts of the first wafer cleaning apparatus 10.

[0040] The support portion 162 can be connected to the clamping portion 161. The support portion 162 can extend downward from the clamping portion 161. The support portion 162 can support the clamping portion 161. The support portion 162 can cover the outer surface of the housing 100.

[0041] The support part 162 can rotate together with the clamping part 161 in a first rotation direction a1 or a second rotation direction a2. Here, the entire support part 162 can rotate, or only a part of the support part 162 can rotate. When only a part of the support part 162 rotates, the rotating part can be a part of the support part 162 connected to the clamping part 161. Thus, the wafer W can rotate, for example, together with the clamping part 161 and the said part of the support part 162 connected to the clamping part 161 in the first rotation direction a1 or the second rotation direction a2.

[0042] The first rotator 160 can rotate the wafer W in the first rotation direction a1 or the second rotation direction a2 at an appropriate speed. This is because when the rotation speed of the first rotator 160 is too high, the edge part of the wafer W is relatively cooled, resulting in a non-uniform distribution of temperature. In this case, the etching rate of the central part of the wafer W will also be different from the etching rate of the edge part of the wafer W.

[0043] Therefore, the rotation speed of the first rotator 160 can be limited to 100 rpm to 300 rpm. However, the inventive concept is not limited to this case.

[0044] The nozzle 170 can be located above the wafer W and the first rotator 160. The nozzle 170 can supply the liquid chemical 171 to the upper surface of the wafer W. The nozzle 170 can drop the liquid chemical 171 onto the central part of the wafer W (e.g., at the center of the upper surface of the wafer W). As the wafer W rotates, the dropped liquid chemical 171 can be spread over the entire upper surface of the wafer W. The first wafer cleaning device 10 can apply a flow F in the downward direction to fix / stabilize the wafer W in place and spread the liquid chemical 171 evenly. Thus, the liquid chemical 171 can move from the center of the upper surface of the wafer W toward the periphery. For example, the flow F can be an air flow. For example, the flow F can include N 2 gas.

[0045] In Figure 1 this, the nozzle 170 sprays the liquid chemical 171 in the downward direction from above the upper surface of the wafer W. However, the present disclosure is not limited to this case. In some embodiments, the nozzle 170 can be disposed at a position higher than the upper surface of the wafer W on one side of the wafer W. In certain embodiments, the nozzle 170 can supply the liquid chemical 171 to the upper surface of the wafer W by spraying the liquid chemical 171 in the lateral direction (e.g., by applying a high pressure to the liquid chemical 171 to spray the liquid chemical 171 from the nozzle 170). For example, the liquid chemical 171 can be sprayed onto the upper surface of the wafer W by the high pressure applied to the liquid chemical 171.

[0046] The liquid chemical 171 can be a solution for etching the upper surface of the wafer W to form a pattern on the wafer W, for example. For example, SiN or polysilicon contained in the wafer W can be the material to be etched.

[0047] The liquid chemical 171 can vary according to the material to be etched. The liquid chemical 171 can include, but is not limited to, at least one of phosphoric acid, ammonia water, and tetramethylammonium hydroxide.

[0048] The liquid chemical 171 is supplied through the nozzle 170. The nozzle 170 can eject the liquid chemical 171 onto the upper surface of the wafer W in an appropriate amount and rate. This is because if too much or too fast of the liquid chemical 171 is provided, the temperature rise of the wafer W will slow down too much. Therefore, the nozzle 170 can supply the liquid chemical 171 to the wafer W at a rate of, but not limited to, 0.1 L / min to 1 L / min.

[0049] The upper surface of the wafer W fixed / anchored by the first spinner 160 can be located at a position higher than the lower surface of the first wafer cleaning device 10 by a first height H1.

[0050] The bowl 180 can be located outside the wafer W, the first spinner 160, and the housing 100. The bowl 180 can extend in the third direction Z to a position higher than the upper surface of the wafer W. The bowl 180 can prevent the outflow of the liquid chemical 171 and the fumes generated by the evaporation of the liquid chemical 171. The bowl 180 can prevent other parts of the first wafer cleaning device 10 from being damaged by the liquid chemical 171 and the fumes, or protect other parts of the first wafer cleaning device 10 from being damaged by the liquid chemical 171 and the fumes.

[0051] Now, the components in the housing 100 will be described in detail.

[0052] The laser module 110 can be disposed inside the housing 100. The laser module 110 can radiate a laser beam from the lower side of the wafer W to the lower surface of the wafer W, and the wavelength of the laser beam can be 200 nm to 1100 nm. The laser module 110 can be located below the hollow area 140. For example, the laser module 110 can be disposed at the bottom of the hollow area 140. The first laser beam L1 radiated by the laser module 110 can pass through the hollow area 140 and the transparent window 150 to reach the lower surface of the wafer W.

[0053] The laser module 110 can include an optical fiber 111 and an aspherical lens 120. The laser beam of the laser module 110 can be supplied through the optical fiber 111. The optical fiber 111 can be connected to the outside to form a path through which the laser beam is supplied.

[0054] The first wafer cleaning apparatus 10 may have dimensions in centimeters. For example, a first width d1 of the first spinner 160 in a first direction X may be, but is not limited to, 35 cm to 40 cm. For example, the first width d1 of the first spinner 160 may correspond to the diameter of the first spinner 160. A first height H1 may be, but is not limited to, 50 cm to 70 cm. A second height H2 from an upper surface of the wafer W and / or from a top surface of the first spinner 160 to a top of the first wafer cleaning apparatus 10 may be, but is not limited to, 30 cm. For example, a top surface of the first spinner 160 and a top surface of the wafer W may be coplanar.

[0055] Since the laser module 110 supplies a laser beam into the first wafer cleaning apparatus 10, the laser module 110 should not be too large. Thus, it may be beneficial to supply the laser beam through the optical fiber 111 (instead of a module that uses a mirror for which a relatively long reflection distance can be used) to supply the laser beam. However, the inventive concept is not limited to this case.

[0056] The laser module 110 may include, for example, additional lenses in addition to the aspherical lens 120 described above. For example, the additional lenses may include aspherical lenses and / or spherical lenses. For example, the aspherical lens 120 may process / alter a distribution of the laser beam supplied by the optical fiber 111 in combination with the additional lenses. This will be described in more detail later.

[0057] A hollow region 140 may be located inside the housing 100. The hollow region 140 may be an empty space inside the housing 100. The hollow region 140 may be a region where a first laser beam L1 radiated by the laser module 110 travels to a lower surface of the wafer W.

[0058] An upper portion of the hollow region 140 may be covered by a transparent window 150. Thus, the hollow region 140 may be completely isolated from the outside through the housing 100 and the transparent window 150. This may be intended to prevent the laser module 110 and the hollow region 140 from being contaminated by the liquid chemical 171 and fumes generated by the liquid chemical 171.

[0059] An inside of the hollow region 140 may be a vacuum. For example, while an etching process is performed through the first wafer cleaning apparatus 10, the hollow region 140 may be maintained in a vacuum state. Thus, the first laser beam L1 may easily travel in the hollow region 140. However, the inventive concept is not limited to this case, and an inside of the hollow region 140 may be filled with a gas medium that does not impede the travel of the first laser beam L1.

[0060] The hollow region 140 can be hemispherical. For example, the hollow region 140 can be surrounded by the reflector 130 at the sides and the bottom, and surrounded by the transparent window 150 at the upper part of the hollow region 140. For example, the hollow region 140 can be formed as a hemisphere so that the second laser beam L2 generated by the reflection of the first laser beam L1 by the lower surface of the wafer W can be reflected by the reflector 130 (e.g., towards the wafer W). Thus, the third laser beam L3 generated by the reflection of the second laser beam L2 by the reflector 130 can effectively reach the lower surface of the wafer W.

[0061] The reflector 130 can be disposed at the bottom of the hollow region 140 and / or surround the bottom of the hollow region 140. The reflector 130 can reflect the second laser beam L2 generated by the reflection of the first laser beam L1 radiated from the laser module 110 by the lower surface of the wafer W. Thus, the third laser beam L3 generated by the reflection of the second laser beam L2 by the reflector 130 can reach the lower surface of the wafer W.

[0062] The second laser beam L2 generated by the reflection of the first laser beam L1 can damage the first wafer cleaning device 10 when it reaches other parts of the first wafer cleaning device 10. Thus, the reflector 130 can be used to prevent the second laser beam L2 from reaching other parts of the first wafer cleaning device 10. At the same time, the reflector 130 can reflect the second laser beam L2 to make the third laser beam L3 reach the lower surface of the wafer W, thereby improving the heating efficiency of the wafer W.

[0063] The transparent window 150 can be located in the upper surface / part of the housing 100. For example, the transparent window 150 can seal the upper part of the housing 100. The transparent window 150 can cover the top of the hollow region 140. The transparent window 150 can be made of a transparent material, and the first laser beam L1, the second laser beam L2, and the third laser beam L3 can pass through the transparent window 150. For example, the transparent window 150 can be made of quartz material.

[0064] The transparent window 150 can be adjacent to the wafer W. The gap between the transparent window 150 and the wafer W can be the third width d3. Compared with the first width d1, the second width d2, the first height H1, and the second height H2, the third width d3 can be relatively small. Thus, the first laser beam L1, the second laser beam L2, and the third laser beam L3 can not leak to other places except the lower surface of the wafer W.

[0065] However, the transparent window 150 and the wafer W can not contact each other. This is because the wafer W needs to be rotated by the first rotator 160, and the housing 100 equipped with the transparent window 150 can not be rotated.

[0066] Since it is advantageous to uniformly warm or heat the entire lower surface of the wafer W, the interface between the lower surface of the wafer W and the transparent window 150 can correspond to each other. For example, the edge portion of the wafer W can also be exposed to the first laser beam L1 and the third laser beam L3 through the transparent window 150. For example, in a plan view, the edge of the wafer W can overlap with the edge of the transparent window 150.

[0067] Figure 3 is a conceptual diagram showing Figure 1 the operation of the aspherical lens 120.

[0068] Referring to Figures 1 to 3 , the aspherical lens 120 can process the laser beam. For example, the first laser beam L1 supplied by the optical fiber 111 can have a Gaussian distribution Lg. For example, when the first laser beam L1 is emitted from the optical fiber 111, the first laser beam L1 can have a Gaussian energy distribution E with respect to the distance d.

[0069] When the first laser beam L1 passes through the aspherical lens 120, the Gaussian distribution Lg of the first laser beam L1 can be converted into a first output distribution Lo1. Referring to the first output distribution Lo1, a uniform energy E can be supplied to the entire lower surface of the wafer W corresponding to the second width d2 regardless of the distance d.

[0070] Therefore, the first wafer cleaning apparatus 10 can make the temperature of the wafer W uniform, thereby obtaining a uniform etching rate over the entire wafer W.

[0071] The first output distribution Lo1 can be the distribution of the first laser beam L1. In some embodiments, the first output distribution Lol can be the sum of the distribution of the first laser beam L1 and the distribution of the third laser beam L3. For example, when the third laser beam L3 is not significant, the sum of the distribution of the first laser beam L1 and the distribution of the third laser beam L3 can be substantially the same as the distribution of the first laser beam L1. Since the sum of the distribution of the first laser beam L1 and the distribution of the third laser beam L3 is the laser beam actually applied to the lower surface of the wafer W, the first wafer cleaning apparatus 10 can uniformly perform the etching process by using this laser beam.

[0072] When the first output distribution Lo1 is the sum of the distributions of the first laser beam L1 and the third laser beam L3, the shape of the hollow region 140 and the design of the aspherical lens 120 can be parameters for the first output distribution Lo1. For example, the first wafer cleaning apparatus 10 can uniformly adjust the first output distribution Lo1 through the curvature of the hemispherical surface of the hollow region 140 and the design of the aspherical lens 120. For example, the curvature of the hemispherical surface and the aspherical lens 120 can be designed for the first wafer cleaning apparatus 10 to output a uniform distribution like the first output distribution Lol. For example, the curvature of the hemispherical surface can be considered in designing the aspherical lens 120, and vice versa.

[0073] Figure 4 is a conceptual diagram showing the operation of the aspherical lens 120 of the first wafer cleaning apparatus 10 according to some embodiments.

[0074] Refer to Figure 4 , the first wafer cleaning apparatus 10 according to an embodiment can convert the Gaussian distribution Lg of the first laser beam L1 into a second output distribution Lo2 through the aspherical lens 120. The second output distribution Lo2 can be the distribution of the first laser beam L1, or can be the sum of the distributions of the first laser beam L1 and the third laser beam L3.

[0075] The second output distribution Lo2 can be a distribution obtained by increasing the energy E reaching the edge portion of the wafer W. The second output distribution Lo2 can increase the temperature of the edge portion of the wafer W. The first wafer cleaning apparatus 10 can have a downward flow F on the upper surface of the wafer W. Since the flow F moves to the outside of the wafer W through the edge of the wafer W, the edge portion of the wafer W is undesirably cooled.

[0076] To offset this, the first wafer cleaning apparatus 10 can adjust the sum of the distributions of the first laser beam L1 and the third laser beam L3 to the second output distribution Lo2 by adjusting the curvature of, for example, the aspherical lens 120 and / or the reflector 130.

[0077] Figure 5 is a graph showing Figure 1 the laser type of the laser module 110.

[0078] Refer to Figure 1 and Figure 5 , the first laser beam L1 of the laser module 110 can have a continuous wave type. The continuous wave type is opposite to the pulse type and refers to a laser beam that is continuously radiated without being turned on and off. Here, the frequency or wavelength components of the laser beam itself also exist in the continuous wave type.

[0079] The first laser beam L1 of the laser module 110 can be continuously radiated with the magnitude of the first energy E1. The first laser beam L1 can be constantly radiated with the first energy E1, and the magnitude of the energy does not change with time.

[0080] The laser module 110 of the first wafer cleaning apparatus 10 according to an embodiment can improve the efficiency of temperature increase by using a continuous wave type of laser beam. Accordingly, the etching rate of the first wafer cleaning apparatus 10 can also be increased.

[0081] Figure 6 is a graph showing the laser type of the laser module 110 of the first wafer cleaning apparatus 10 according to some embodiments.

[0082] Refer to Figure 6 , the first laser beam L1 of the laser module 110 of the first wafer cleaning apparatus 10 according to an embodiment can have a pulse type. The pulse type is opposite to the continuous wave type and refers to a laser beam that is radiated discontinuously by being periodically turned on and off. In addition to the on / off frequency, when the laser beam is turned on, the frequency or wavelength component of the laser beam itself also exists in a pulse type.

[0083] The first laser beam L1 of the laser module 110 can be periodically radiated in the form of pulses having the magnitude of the third energy E3. The average energy of the first laser beam L1 can be the second energy E2. The interval between the pulses of the first laser beam L1 can be the first interval T1.

[0084] The first interval T1 can be in units of several nanoseconds or several picoseconds. For example, the frequency of the first laser beam L1 of the pulse type can be 10 MHz to 1000 MHz. Too low a frequency would be inappropriate because, for example, when the third energy E3 is too high, the wafer W would be physically perforated rather than heated.

[0085] In the case of the first laser beam L1 of the pulse type, the intensity of heating can be adjusted by adjusting / changing the frequency (e.g., the pulse frequency) of the first laser beam L1 of the pulse type without adjusting / changing the energy of the first laser beam L1.

[0086] The laser module 110 of the first wafer cleaning apparatus 10 according to an embodiment can easily perform temperature control by using the frequency adjustment of the pulse type of laser beam. Accordingly, the first wafer cleaning apparatus 10 can perform an accurate etching process.

[0087] Now, reference will be made to Figure 7 Describe the second wafer cleaning apparatus 11 according to some embodiments. Descriptions of elements and features that are the same as those of the above embodiments will be briefly given or omitted.

[0088] Figure 7A cross-sectional view of a second wafer cleaning apparatus 11 according to some embodiments.

[0089] Referring to Figure 7 , the second wafer cleaning apparatus 11 according to an embodiment may include a first light absorption plate 131.

[0090] The first light absorption plate 131 may be formed at the bottom and sides of the hollow region 140. The first light absorption plate 131 may absorb a second laser beam L2 generated by reflection of the first laser beam L1 from the lower surface of the wafer W.

[0091] The second laser beam L2 may be a laser beam generated when a part of the first laser beam L1 is reflected from the lower surface of the wafer W. If the second laser beam L2 reaches other parts of the second wafer cleaning apparatus 11, the second wafer cleaning apparatus 11 may be damaged. To prevent this, the first light absorption plate 131 of the second wafer cleaning apparatus 11 according to an embodiment may absorb all of the second laser beam L2. For example, as described herein, absorption of all of the second laser beam L2 by the first light absorption plate 131 may refer to the light absorption rate of substantially all of the second laser beam L2 through the first light absorption plate 131. For example, the light absorption rate of substantially all of the second laser beam L2 may refer to a light absorption rate of 99% or more of the second laser beam L2 through the first light absorption plate 131.

[0092] The hollow region 140 and the transparent window 150 may be provided adjacent to the lower surface of the wafer W. For example, compared with a first width d1, a second width d2, a first height H1, and a second height H2, a third width d3 may be relatively small. Accordingly, the second laser beam L2 may not leak between the transparent window 150 and the wafer W. Accordingly, all of the second laser beam L2 may enter the hollow region 140. For example, substantially all (e.g., 99% or more) of the second laser beam L2 may enter the hollow region 140. Then, all of the second laser beam L2 may be absorbed by the first light absorption plate 131.

[0093] Since the first light absorption plate 131 is located on the entire side and bottom portions of the hollow region 140, all of the second laser beam L2 may be absorbed by the first light absorption plate 131.

[0094] The second wafer cleaning apparatus 11 according to an embodiment may warm or heat the lower surface of the wafer W by using the first laser beam L1. For example, the wafer W may be heated or warmed by irradiating the first laser beam L1 onto the lower surface of the wafer W. Accordingly, by considering the distribution of the first laser beam L1 without considering the reflected wave, it may be beneficial to more intuitively and easily warm or heat the wafer W. Accordingly, a more precise etching process may be performed.

[0095] Now referring to Figure 8Describe a third wafer cleaning apparatus 12 according to some embodiments. Descriptions of elements and features identical to those of the above embodiments will be briefly given or omitted.

[0096] Figure 8 is a cross-sectional view of a third wafer cleaning apparatus 12 according to some embodiments.

[0097] Referring to Figure 8 , the third wafer cleaning apparatus 12 according to an embodiment may include a funnel-shaped hollow region 140 and a second light absorption plate 132.

[0098] The second light absorption plate 132 may be formed, for example, in a funnel shape along the side and bottom of the hollow region 140. The second light absorption plate 132 may absorb a second laser beam L2 generated by reflection of the first laser beam L1 from the lower surface of the wafer W.

[0099] The hollow region 140 and the transparent window 150 may be disposed adjacent to the lower surface of the wafer W. For example, compared with a first width d1, a second width d2, a first height H1, and a second height H2, a third width d3 may be relatively small. Accordingly, the second laser beam L2 may not leak between the transparent window 150 and the wafer W. Thus, all of the second laser beam L2 may enter the hollow region 140. For example, substantially all (e.g., 99% or more) of the second laser beam L2 may enter the hollow region 140. Then, the second laser beam L2 may be entirely absorbed by the second light absorption plate 132.

[0100] Since the second light absorption plate 132 is located at the entire bottom and side of the hollow region 140, all of the second laser beam L2 may be absorbed by the second light absorption plate 132.

[0101] When the hollow region 140 includes a reflection plate 130 instead of the second light absorption plate 132, the hollow region 140 may be formed in a hemispherical shape in consideration of the laser beam reflected by the reflection plate 130. In an embodiment, Figure 1 the reflection plate 130 of Figure 7 the first light absorption plate 131 of Figure 8 and the second light absorption plate 132 of

[0102] Since the third wafer cleaning apparatus 12 according to an embodiment uses the second light absorption plate 132, it is not necessary to widen the hollow region 140 and it is not necessary to form a hemispherical hollow region 140.

[0103] For example, the hollow region 140 may block / absorb all of the second laser beams L2 generated by the reflection of the first laser beam L1 from the lower surface of the wafer W, without considering the re-reflection of the laser beams. Thus, the hollow region 140 may be formed in a funnel shape instead of a hemispherical shape.

[0104] The second light absorption plate 132 at the bottom of the hollow region 140 may absorb all of the second laser beams L2, thereby preventing the third wafer cleaning apparatus 12 from being damaged by the second laser beams L2, or protecting the third wafer cleaning apparatus 12 from being damaged by the second laser beams L2.

[0105] Thus, the third wafer cleaning apparatus 12 according to the embodiment may save space inside the housing 100. Thus, a third wafer cleaning apparatus 12 of a smaller size may be provided.

[0106] Now, reference will be made to Figures 9 to 11 the description of a fourth wafer cleaning apparatus 13 according to some embodiments. Descriptions of elements and features that are the same as those of the above embodiments will be briefly given or omitted.

[0107] Figure 9 is a cross-sectional view of a fourth wafer cleaning apparatus 13 according to some embodiments. Figure 10 is a conceptual diagram showing Figure 9 the operations of the first rotor 165 and the second rotor 210.

[0108] Referring to Figure 9 , the fourth wafer cleaning apparatus 13 according to the embodiment may include a second rotator 160a, a clamping portion 161, a chemical discharge guide 163, a heat insulating block 164, a first rotor 165, a side wall portion 168, a bearing 166, and a fixing portion 167. Additionally, the fourth wafer cleaning apparatus 13 may include a fixed rotor module 230. The fixing portion 167 described herein may be a fixing device that does not move when performing an etching process on a wafer / substrate.

[0109] The clamping portion 161 may be a portion that contacts the side surface of the wafer W. The clamping portion 161 may hold the wafer W by directly holding (e.g., contacting) the side surface of the wafer W. For example, the clamping portion 161 may rotate together with the wafer W in Figure 2 the first rotation direction a1 or the second rotation direction a2.

[0110] The clamping portion 161 may include a heat insulating material. When the wafer W is heated or warmed by various elements (e.g., the laser module 110) in the housing 100, the clamping portion 161 may block the transfer of heat, thereby preventing thermal damage to other parts of the fourth wafer cleaning apparatus 13.

[0111] The chemical discharge guide 163 can guide the discharge path of the liquid chemical 171. The chemical discharge guide 163 can be connected to the clamping part 161. The liquid chemical 171 can be pushed to the side of the wafer W by the flow F after being used in the etching process performed on the upper surface of the wafer W.

[0112] Then, the liquid chemical 171 can reach the chemical discharge guide 163 via the clamping part 161 on the side of the wafer W and become the discharged liquid chemical 171o. The discharged liquid chemical 171o can be discharged to the outside along the chemical discharge guide 163.

[0113] Since the chemical discharge guide 163 is located at a position lower than the bowl 180, the bowl 180 can prevent the liquid chemical 171 and the discharged liquid chemical 171o from leaking to the outside (e.g., outside the bowl 180). This can improve the durability of the fourth wafer cleaning apparatus 13 and prevent damage caused by the discharged liquid chemical 171o.

[0114] Compared with other elements of the second spinner 160a (e.g., the heat insulation block 164, the first rotor 165, the side wall part 168, the bearing 166, and the fixing part 167), the chemical discharge guide 163 can be disposed at a position farther / more external from the wafer W. Therefore, the discharged liquid chemical 171o can be prevented from damaging the heat insulation block 164, the first rotor 165, the side wall part 168, the bearing 166, and the fixing part 167.

[0115] The heat insulation block 164 can form the side wall of the second spinner 160a and can be disposed between the clamping part 161 and the chemical discharge guide 163. The heat insulation block 164 can be made of a heat insulating material to prevent the heat received by the clamping part 161 and the chemical discharge guide 163 from being transferred to other elements of the second spinner 160a.

[0116] Although the heat insulation block 164 is located at the position directly bonded to (e.g., in contact with) Figure 9 the clamping part 161 and the chemical discharge guide 163, the inventive concept is not limited to this case. The heat insulation block 164 can be located at any position in the second spinner 160a.

[0117] Although the heat insulation block 164 is shown as a single element in Figure 9 , the inventive concept is not limited to this case. For example, the heat insulation block 164 can be provided as multiple elements at multiple positions, for example.

[0118] Since the second rotor 210, which will be described later, uses magnetic force, the first rotor 165 can use magnetic force (e.g., magnetic levitation) to rotate the second rotator 160a. Since the first rotor 165 is fixed to the heat insulation block 164, the side wall portion 168, and the clamping portion 161 of the second rotator 160a, the entire second rotator 160a can be rotated by the rotation of the first rotor 165. Therefore, the wafer W can also be rotated together with the second rotator 160a.

[0119] The first rotor 165 may include a magnet. The first rotor 165 and the second rotor 210, which also includes a magnet, can generate a rotational force through magnetic force / magnetic attraction. This will be described in more detail later.

[0120] The side wall portion 168 may contact the first rotor 165 to form the side wall of the second rotator 160a. In Figure 9 this case, the side wall portion 168 is located between the first rotor 165 and the bearing 166. However, the inventive concept is not limited to this case. The side wall portion 168 may include all parts that constitute the side wall of the second rotator 160a. Therefore, the side wall portion 168 may be a single element as in Figure 9 or may include multiple elements.

[0121] The bearing 166 may be located between the side wall portion 168 and the fixing portion 167. However, the position of the bearing 166 is not limited to this position. The bearing 166 may be provided at any position between the fixed fixing portion 167 and the rotating first rotor 165. For example, the fixing portion 167 may be a part that does not move during the cleaning / etching process performed by the fourth wafer cleaning device 13.

[0122] The bearing 166 allows the second rotator 160a to rotate. For example, the bearing 166 may be the smallest element that can rotate the second rotator 160a even if the second rotator 160a includes a fixed fixing portion 167. For example, other parts of the second rotator 160a (e.g., the first rotor 165 and the side wall portion 168) may be configured to be movable relative to the fixing portion 167.

[0123] The bearing 166 may rotate as the first rotor 165 rotates. The bearing 166 can simultaneously connect the fixing portion 167 and the side wall portion 168, the first rotor 165, the heat insulation block 164, the clamping portion 161, and the chemical discharge guide 163. Therefore, the second rotator 160a can rotate while being fixed in place.

[0124] The fixed part 167 may be disposed at the bottom of the second rotator 160a and may fix and support the second rotator 160a. The fixed part 167 may not rotate. Optionally, the fixed part 167 may be connected to the bearing 166 such that a part of the second rotator 160a may rotate.

[0125] Accordingly, some parts of the second rotator 160a other than the fixed part 167 may rotate to rotate the wafer W.

[0126] The fixed rotor module 230 may be spaced apart from the second rotator 160a. For example, in a plan view, the fixed rotor module 230 may surround the second rotator 160a. For example, the fixed rotor module 230 may be located between the chemical emission guide 163 and the first rotor 165. However, the inventive concept is not limited to this case.

[0127] The fixed rotor module 230 may include a second rotor 210 and a rotor support 220. Similar to the first rotor 165 described above, the second rotor 210 may rotate the second rotator 160a by using magnetic force (e.g., magnetic levitation). For example, the combination of the first rotor 165 and the second rotor 210 may generate a magnetic force to rotate the second rotator 160a. The second rotor 210 is spaced apart from the heat insulating block 164, the side wall portion 168, and the clamping portion 161 of the second rotator 160a. In addition, the second rotor 210 is connected to the rotor support 220.

[0128] The second rotor 210 may include magnets. The second rotor 210 may generate a rotational force together with the first rotor 165 by magnetic force.

[0129] Referring to Figure 10 , the first rotor 165 may include a first rotor first magnetic pole region 165a and a first rotor second magnetic pole region 165b. The first rotor first magnetic pole region 165a and the first rotor second magnetic pole region 165b may have different magnetic poles. For example, the first rotor first magnetic pole region 165a may be a north (N) pole, and the first rotor second magnetic pole region 165b may be a south (S) pole. Optionally, the first rotor first magnetic pole region 165a may be an S pole, and the first rotor second magnetic pole region 165b may be an N pole.

[0130] The first rotor first magnetic pole region 165a and the first rotor second magnetic pole region 165b may be alternately arranged.

[0131] Similarly, the second rotor 210 may include a first magnetic pole region 210a of the second rotor and a second magnetic pole region 210b of the second rotor. The first magnetic pole region 210a of the second rotor and the second magnetic pole region 210b of the second rotor may have different magnetic poles. For example, the first magnetic pole region 210a of the second rotor may be an N pole, and the second magnetic pole region 210b of the second rotor may be an S pole. Optionally, the first magnetic pole region 210a of the second rotor may be an S pole, and the second magnetic pole region 210b of the second rotor may be an N pole.

[0132] The first magnetic pole region 165a of the first rotor may have the same magnetic pole as the first magnetic pole region 210a of the second rotor. The second magnetic pole region 165b of the first rotor may have the same magnetic pole as the second magnetic pole region 210b of the second rotor.

[0133] The first magnetic pole region 165a of the first rotor, the second magnetic pole region 165b of the first rotor, the first magnetic pole region 210a of the second rotor, and the second magnetic pole region 210b of the second rotor may be staggered. The first magnetic pole region 165a of the first rotor, the second magnetic pole region 165b of the first rotor, the first magnetic pole region 210a of the second rotor, and the second magnetic pole region 210b of the second rotor may be implemented by, but not limited to, electromagnets.

[0134] Since the first magnetic pole region 165a of the first rotor, the second magnetic pole region 165b of the first rotor, the first magnetic pole region 210a of the second rotor, and the second magnetic pole region 210b of the second rotor are staggered, the first rotor 165 may rotate in the first rotation direction a1 and / or the second rotation direction a2.

[0135] For example, the first magnetic pole region 165a of the first rotor and the first magnetic pole region 210a of the second rotor have a repulsive force with each other, and the first magnetic pole region 165a of the first rotor and the second magnetic pole region 210b of the second rotor have an attractive force with each other. Similarly, the second magnetic pole region 165b of the first rotor and the second magnetic pole region 210b of the second rotor have a repulsive force with each other, and the second magnetic pole region 165b of the first rotor and the first magnetic pole region 210a of the second rotor have an attractive force with each other.

[0136] Therefore, the staggered first rotor 165 and second rotor 210 have a rotational force that causes different regions to face each other. For example, the second rotator 160a including the first rotor 165 may rotate such that the first magnetic pole region 165a of the first rotor and the second magnetic pole region 210b of the second rotor face each other, and the second magnetic pole region 165b of the first rotor and the first magnetic pole region 210a of the second rotor face each other. Then, when the first rotor 165 or the second rotor 210 reverses the alternately arranged magnetic pole regions, the rotation of the second rotator 160a may be further accelerated.

[0137] Thus, the second rotator 160a can be rotated by magnetic force (e.g., magnetic levitation). Since the fourth wafer cleaning apparatus 13 according to the embodiment generates a rotational force without contact between the first rotor 165 and the second rotor 210, the fourth wafer cleaning apparatus 13 has no mechanical wear and can improve / maintain its durability. In addition, since there is no heat conduction between the first rotor 165 and the second rotor 210, the fourth wafer cleaning apparatus 13 can have a long lifespan.

[0138] The rotor support 220 can be disposed below the second rotor 210 and can support the second rotor 210. The rotor support 220 can be fixed to the second rotor 210. The rotor support 220 can have a fixed position. For example, when an etching / cleaning process is performed in the fourth wafer cleaning apparatus 13, the rotor support 220 can, for example, not move relative to other parts of the fourth wafer cleaning apparatus 13 such as the bowl-shaped member 180 and / or the fixing part 167.

[0139] Accordingly, the second rotor 210 can be fixed, and the first rotor 165 that can be relatively rotated through the bearing 166 can rotate in the first rotation direction a1 or the second rotation direction a2.

[0140] Since the first rotor 165 and the second rotor 210 are magnets, they are liable to be heated. Accordingly, the coolant C can move between the first rotor 165 and the second rotor 210 to cool the first rotor 165 and the second rotor 210.

[0141] Herein, the coolant C can be, but is not limited to, N 2 gas.

[0142] Figure 11 is a block diagram of the fourth wafer cleaning apparatus 13 and the cooling module 240 according to the embodiment.

[0143] Referring to Figure 11 , the cooling module 240 can supply the coolant C to the fourth wafer cleaning apparatus 13. Accordingly, the fourth wafer cleaning apparatus 13 can cool the first rotor 165 and the second rotor 210.

[0144] However, the inventive concept is not limited to this case. For example, according to some embodiments, the cooling module 240 can be located inside the fourth wafer cleaning apparatus 13.

[0145] Since the fourth wafer cleaning apparatus 13 according to the embodiment rotates the second rotator 160a by magnetic force (e.g., magnetic levitation), the second rotator 160a can rotate without contact between the first rotor 165 and the second rotor 210.

[0146] Therefore, the durability of the fourth wafer cleaning apparatus 13 can be improved, resulting in a longer lifespan. Additionally, since there is no friction, the wafer W can rotate uniformly and stably.

[0147] Reference will now be made Figure 1 、 Figure 3 、 Figure 12 and Figure 13 to describe a wafer cleaning method according to some embodiments. Descriptions of elements and features that are the same as those of the above embodiments will be given briefly or omitted.

[0148] Figure 12 FIG. is a flowchart showing a wafer cleaning method according to some embodiments. Figure 13 FIG. is a detailed flowchart showing a heating operation of a wafer cleaning method according to an embodiment.

[0149] Referring to Figure 12 , place the wafer on the housing (operation S100).

[0150] For example, referring to Figure 1 , the housing 100 can be positioned below the wafer W. For example, the housing 100 and the wafer W can be arranged continuously in the third direction Z. The upper surface of the housing 100 can be adjacent to the lower surface of the wafer W. However, the housing 100 and the wafer W may not be in contact with each other.

[0151] The first rotator 160 can contact the side surface of the wafer W. The first rotator 160 can fix the side surface of the wafer W in place and keep the housing 100 and the wafer W spaced apart from each other.

[0152] Returning to refer to Figure 12 , supply a liquid chemical to the wafer (operation S200).

[0153] For example, referring to Figure 1 , the nozzle 170 can be placed above the wafer W and the first rotator 160. The nozzle 170 can supply the liquid chemical 171 to the upper surface of the wafer W. The nozzle 170 can drop the liquid chemical 171 onto the central portion of the wafer W. As the wafer W rotates, the dropped liquid chemical 171 can spread over the entire upper surface of the wafer W.

[0154] Returning to refer to Figure 12 , rotate the wafer (operation S400).

[0155] For example, referring to Figure 1 , the first rotator 160 can rotate the wafer W while holding the wafer W on the side surface of the wafer W. When the first rotator 160 rotates in the first rotation direction a1 or the second rotation direction a2, the wafer W can also rotate in the same direction.

[0156] When the wafer W rotates together with the first rotator 160, the liquid chemical 171 supplied onto the upper surface of the wafer W can be evenly spread over the upper surface of the wafer W. The rotation of the wafer W together with the first rotator 160 can help the upper surface of the wafer W have a uniform etching rate.

[0157] Although the operation of supplying the liquid chemical onto the wafer (operation S200) and the rotation operation of the wafer (operation S400) are shown as sequential operations in Figure 12 the inventive concept is not limited to this case. For example, the operation of supplying the liquid chemical onto the wafer (operation S200) and the rotation operation of the wafer (operation S400) can be performed simultaneously.

[0158] Returning to the reference Figure 12 , heating the entire lower surface of the wafer (operation S300). This can be performed simultaneously with the operation of supplying the liquid chemical onto the wafer (operation S200) and the rotation operation of the wafer (operation S400). Here, "simultaneously" does not mean performing different operations at exactly the same time, but can include cases where the execution times of different operations partially overlap. For example, "simultaneously" can refer to cases where the execution times of different operations independently performed overlap.

[0159] For example, referring to Figure 1 , the laser module 110 can be disposed inside the housing 100. The laser module 110 can radiate a laser beam from below the wafer W to the lower surface of the wafer W. The laser module 110 can be located below the hollow region 140 or at the bottom of the hollow region 140. The first laser beam L1 radiated by the laser module 110 can pass through the hollow region 140 and the transparent window 150 to reach the lower surface of the wafer W. Accordingly, the entire lower surface of the wafer W can be heated. For example, the wafer W can be heated by radiating the first laser beam L1 to the lower surface of the wafer W.

[0160] Referring to Figure 13 , the first laser beam is supplied through an optical fiber (operation S310).

[0161] For example, referring to Figure 1 , the laser beam of the laser module 110 can be supplied through the optical fiber 111. The optical fiber 111 can be connected to the outside to form a path through which the laser beam is supplied.

[0162] Returning to the reference Figure 13 , an aspherical lens is used to process the first laser beam (operation S320).

[0163] For example, referring to Figure 1 and Figure 3, the first laser beam L1 supplied by the optical fiber 111 may have a Gaussian distribution Lg. When the first laser beam L1 passes through the aspherical lens 120, the Gaussian distribution Lg of the first laser beam L1 may be converted into a first output distribution Lo1. For example, as Figure 3 shown, with reference to the first output distribution Lo1, a uniform energy E can be supplied to / over the entire lower surface of the wafer W corresponding to the second width d2, regardless of the distance d.

[0164] In some embodiments, if desired, the wafer cleaning apparatus may process the first laser beam L1 into a distribution different from the first output distribution Lo1.

[0165] Returning to reference Figure 13 , the lower surface of the wafer is heated using the first laser beam (operation S330).

[0166] For example, referring to Figure 1 , the first laser beam L1 may pass through the hollow region 140 and the transparent window 150 to reach the lower surface of the wafer W. The first laser beam L1 may heat the entire lower surface of the wafer W.

[0167] Now, a wafer cleaning method according to some embodiments will be described with reference to Figure 1 , Figure 12 and Figure 14 . Descriptions of elements and features that are the same as those of the above embodiments will be given briefly or omitted.

[0168] The current embodiment may be the same as the above embodiments in the operations shown in Figure 12 . Therefore, among the operations shown in Figure 12 , only the operation of heating the entire lower surface of the wafer (operation S300) will be described in detail again.

[0169] Figure 14 is a detailed flowchart showing the heating operation of a wafer cleaning method according to some embodiments. Supplying the first laser beam through an optical fiber (operation S310), processing the first laser beam using an aspherical lens (operation S320), and heating the lower surface of the wafer using the first laser beam (operation S330) are the same as the operations in Figure 13 . Therefore, only the operation of heating the lower surface of the wafer using a third laser beam different from Figure 13 will be described.

[0170] Referring to Figure 14 , the entire lower surface of the wafer is heated using the third laser beam (operation S340).

[0171] For example, referring to Figure 1, the hollow region 140 may be hemispherical. The hollow region 140 may be formed as hemispherical because the second laser beam L2 generated by the reflection of the first laser beam L1 by the lower surface of the wafer W should be reflected by the reflector 130. Therefore, the third laser beam L3 generated by the reflection of the second laser beam L2 by the reflector 130 can effectively reach the lower surface of the wafer W.

[0172] Although the inventive concept has been specifically shown and described with reference to exemplary embodiments thereof, those of ordinary skill in the art will understand that various changes in form and detail may be made herein without departing from the spirit and scope of the inventive concept as defined by the claims. Accordingly, it is intended that this embodiment be considered in all respects to be illustrative and not restrictive, reference being made to the claims rather than the foregoing description to indicate the scope of the inventive concept.

Claims

1. A semiconductor device manufacturing apparatus, the semiconductor device manufacturing apparatus comprises: a spinner configured to hold a wafer; a nozzle configured to supply a liquid chemical onto an upper surface of the wafer; and a laser module configured to heat the wafer by irradiating a laser beam onto a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer, the semiconductor device manufacturing apparatus further comprises: a housing surrounding the laser module; a cavity formed in the housing; a transparent window covering a top of the cavity, the transparent window being configured to transmit the laser beam; and a blocking film formed at a bottom of the cavity, the blocking film being configured to block the laser beam.

2. The semiconductor device manufacturing apparatus according to claim 1, wherein the transparent window is positioned to transmit the laser beam through the transparent window such that the laser beam reaches an entire lower surface of the wafer.

3. The semiconductor device manufacturing apparatus according to claim 2, wherein the spinner is configured to hold a side surface of the wafer and rotate the wafer, and wherein the spinner does not contact the housing.

4. The semiconductor device manufacturing apparatus according to claim 2, wherein the spinner comprises: a chuck configured to contact the side surface of the wafer to hold the wafer; a first rotor connected to the chuck, the first rotor being configured to rotate with the chuck by magnetic force; a fixing device supporting the spinner; and a bearing disposed between the fixing device and the first rotor to enable the first rotor to be movable relative to the fixing device.

5. The semiconductor device manufacturing apparatus according to claim 4, the semiconductor device manufacturing apparatus further comprises a second rotor spaced apart from the first rotor, the second rotor being configured to rotate the first rotor by magnetic force.

6. The semiconductor device manufacturing apparatus according to claim 5, wherein the semiconductor device manufacturing apparatus is configured to flow a coolant between the first rotor and the second rotor.

7. The semiconductor device manufacturing apparatus according to claim 2, wherein the cavity is configured to maintain a vacuum state during a process performed by the semiconductor device manufacturing apparatus.

8. The semiconductor device manufacturing apparatus according to claim 2, wherein the blocking film comprises a reflector plate disposed along a bottom of the cavity.

9. The semiconductor device manufacturing apparatus according to claim 8, wherein the cavity is hemispherical.

10. The semiconductor device manufacturing apparatus according to claim 2, wherein the blocking film comprises a light absorption plate disposed along a bottom of the cavity.

11. The semiconductor device manufacturing apparatus according to claim 1, wherein the laser module comprises: an optical fiber configured to supply the laser beam; and an aspherical lens configured to change a distribution of the laser beam emitted from the optical fiber.

12. The semiconductor device manufacturing apparatus according to claim 1, the semiconductor device manufacturing apparatus further comprises: a bowl configured to prevent the liquid chemical from flowing out of the bowl.

13. The semiconductor device manufacturing apparatus according to claim 12, wherein a height of the bowl is higher than an upper surface of the wafer.

14. A semiconductor device manufacturing apparatus, the semiconductor device manufacturing apparatus comprises: a spinner configured to hold a side surface of the wafer, the spinner being configured to rotate with the wafer; A nozzle configured to supply a liquid chemical to an upper surface of a wafer; A housing spaced apart from a spinner; A cavity formed in the housing; A laser module disposed at a bottom of the cavity, the laser module configured to emit a laser beam passing through the cavity; A blocking film formed at the bottom of the cavity, the blocking film configured to block the laser beam; And A transparent window disposed at a top of the cavity, the transparent window configured to transmit the laser beam.

15. The semiconductor device manufacturing equipment according to claim 14, Wherein, The blocking film is configured to reflect the laser beam to the transparent window.

16. The semiconductor device manufacturing equipment according to claim 14, Wherein, The blocking film is configured to absorb the laser beam.

17. The semiconductor device manufacturing equipment according to claim 14, Wherein, The wavelength of the laser beam is from 200 nm to 1100 nm.

18. The semiconductor device manufacturing equipment according to claim 14, Wherein, The laser beam has a continuous wave type.

19. A semiconductor device manufacturing equipment, the semiconductor device manufacturing equipment Comprises: A cavity formed in the housing; A laser module configured to emit a laser beam, the laser module disposed at the bottom of the cavity; A chuck configured to hold a wafer; And A transparent window disposed at a top of the cavity to seal the cavity, the transparent window positioned to transmit the laser beam, Wherein the transparent window is positioned adjacent to a lower surface of the wafer, and Wherein the laser module is configured to heat the wafer by irradiating the entire lower surface of the wafer with the laser beam, The semiconductor device manufacturing equipment further comprises: a blocking film formed at the bottom of the cavity, the blocking film configured to block the laser beam.

20. The semiconductor device manufacturing equipment according to claim 19, the semiconductor device manufacturing equipment further Comprises: A spinner positioned to hold a side of the wafer, the spinner configured to rotate the wafer; And A nozzle configured to supply a liquid chemical onto the upper surface of the wafer, Wherein the blocking film is configured to block the laser beam reflected by the lower surface of the wafer.

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