Photoelectric detection unit, photoelectric detection assembly and laser ranging device

Abstract

The application relates to an optoelectronic detection unit, an optoelectronic detection assembly and a laser ranging device. The optoelectronic detection unit comprises a substrate, an optoelectronic detection structure formed in the substrate for receiving an optical signal and converting the optical signal into an electrical signal, and a backend circuit formed in the substrate for processing the electrical signal and outputting the processed electrical signal through a data port. The backend circuit and the optoelectronic detection structure are distributed side by side along an X-axis direction. An optical assembly is stacked on the substrate along a Y-axis direction for receiving light incident from one side of the substrate and adjusting the path of the light so that the light is incident on the optoelectronic detection structure. By integrating the backend circuit and the optoelectronic detection structure on the same substrate and using the optical assembly to receive side incident light and adjust the optical path so that the light is incident on the optoelectronic detection structure, the bonding process of the circuit can be omitted, multiple optoelectronic detection units can be assembled to form a linear array or a surface array, and the problem of wiring difficulty can be avoided. The assembled structure can also be flexibly disassembled.

Description

Technical Field

[0001] This application relates to the field of photoelectric detection, and in particular to a photoelectric detection unit, a photoelectric detection component, and a laser ranging device. Background Technology

[0002] A single-photon avalanche diode (SPAD) is a detector with advantages such as high gain and high sensitivity, widely used in fields such as nuclear medicine, high-energy physics, precision analysis, and laser detection and measurement (Lidar). A single SPAD can be viewed as a 1-bit ultra-high-speed ADC; connecting it to a simple inverter directly generates digital signals, such as outputting "0" when there is no signal and outputting "1" when there is a signal. To measure light intensity signals, SPADs are used in depth detection in two typical forms:

[0003] (1) Silicon photomultiplier tube (SiPM). The SPAD output ports in the array are connected in parallel to output a signal as a whole. However, since there are multiple SPAD sub-units, it is possible to identify the intensity of the signal light.

[0004] (2) SPAD array. Each pixel of the SPAD in the array is output individually, so that images can be generated directly.

[0005] In practical optoelectronic products, the aforementioned photodetector structures also need to be electrically connected to back-end circuits, which process the electrical signals and output them. Typically, the photodetector structure and the back-end circuits are formed on different wafers, and the back-end circuits are electrically connected to the photodetector assembly via bonding. However, the connection method between the aforementioned photodetector structure and the back-end circuits has the following problems:

[0006] First, the above methods involve bonding processes, which have many preparation steps and are costly.

[0007] Secondly, each SPAD requires a corresponding back-end circuit to process its electrical signals. When SPAD arrays are fabricated, a large number of back-end circuits need to be laid out. The higher the density of the SPAD array, the more difficult the circuit routing becomes, and the higher the difficulty and cost of the corresponding wiring process.

[0008] Third, once a SPAD linear array or area array is fabricated, the linear array or area array is formed on the same substrate, and its overall structure is fixed, making it impossible to flexibly adjust the structure of the SPAD linear array or area array. Summary of the Invention

[0009] Therefore, it is necessary to provide a photoelectric detection unit, a photoelectric detection component, and a laser ranging device to address the technical problems of complex fabrication processes and difficult wiring of the back-end circuits of existing photoelectric detection products.

[0010] To achieve the above objectives, this application provides a photoelectric detection unit.

[0011] A photoelectric detection unit, comprising:

[0012] Base;

[0013] A photoelectric detection structure is formed within the substrate and is used to receive optical signals and convert them into electrical signals.

[0014] A back-end circuit, formed within the substrate, is used to process the electrical signal generated by the photodetector structure and output it through a data port. The back-end circuit and the photodetector structure are arranged side by side along the X-axis direction, which is parallel to the top surface of the substrate.

[0015] An optical component is stacked on the substrate along the Y-axis direction. The optical component has a light-incident surface facing the photodetector unit. The light-incident surface receives light rays incident from the photodetector unit and adjusts the path of the light rays so that the light rays are incident on the photodetector structure. The Y-axis direction is perpendicular to the top surface of the substrate.

[0016] In one embodiment, the optical component is located above the photodetector structure.

[0017] In one embodiment, the optical component includes a light-incident surface, which reflects light incident on the light-incident surface onto the photodetector structure.

[0018] In one embodiment, the photoelectric detection structure includes any one of a single single-photon detector, a single-photon detector array, a silicon photomultiplier tube, and a silicon photomultiplier tube array.

[0019] In the aforementioned photoelectric detection unit, the photoelectric detection structure and back-end circuitry are integrated within the same substrate and arranged side-by-side along the X-axis. An optical component is positioned above the photoelectric detection structure. This optical component receives light incident from one side of the substrate and adjusts the light path to direct the light onto the photoelectric detection structure. In conventional technology, the optical component receives light incident from above and directs it onto the photoelectric detection structure. However, in this application, firstly, the optical component receives light incident from the side and directs it onto the photoelectric detection structure. This facilitates the stacking of multiple photoelectric detection units to form a linear or planar array of photoelectric detection units. Secondly, since the back-end circuitry and photoelectric detection structure are integrated on the same substrate, bonding processes are eliminated, and there are no difficulties in routing the back-end circuitry when multiple photoelectric detection units are assembled into a linear or planar array. Furthermore, after multiple photoelectric detection units are assembled into a linear or planar array, the array can be disassembled or reassembled as needed to flexibly adjust its structure.

[0020] This application also provides a photoelectric detection component.

[0021] A photoelectric detection component includes a plurality of photoelectric detection units as described above. Each photoelectric detection unit has a first side and a second side perpendicular to the X-axis direction. The first side is located on the side of the photoelectric detection structure away from the back-end circuit. The photoelectric detection units are arranged along the Y-axis direction and / or the Z-axis direction. The first side of each photoelectric detection unit is located on the same side of the photoelectric detection component.

[0022] In one embodiment, the first sides of each photodetector unit are aligned with each other, and the second sides of each photodetector unit are aligned with each other.

[0023] In one embodiment, the first sides of each photodetector unit are aligned with each other, and the second sides of each photodetector unit form a stepped structure.

[0024] In one embodiment, the data port extends from the top and / or bottom surface of the substrate, and the data ports of adjacent photodetector units are connected in sequence.

[0025] In one embodiment, the data ports extend from a second side of the substrate, and the data ports are interconnected.

[0026] The aforementioned photoelectric detection components are all assembled from the aforementioned photoelectric detection units. Since each photoelectric detection unit is an independent unit, they can be flexibly assembled as needed to form the required photoelectric detection product. Furthermore, the assembled photoelectric detection linear arrays and photoelectric detection area arrays can be flexibly disassembled and rearranged, offering high flexibility. Simultaneously, because the back-end circuitry is integrated with the photoelectric detection structure on the same substrate, the assembly of multiple photoelectric detection units does not involve wiring of the back-end circuitry, thus avoiding the problem of difficult back-end circuit wiring.

[0027] This application also provides a laser ranging device.

[0028] A laser ranging device further includes a laser emitter and a photoelectric detection component, wherein the photoelectric detection component is the aforementioned photoelectric detection component, the laser emitter has a light-emitting surface, and the light emitted by the laser emitter is reflected by the target object and emitted toward the side of the photoelectric detection component.

[0029] In one embodiment, the laser emitter is sandwiched between photoelectric detection units.

[0030] In one embodiment, the laser ranging device includes N laser emitters, which are uniformly distributed within the photoelectric detection component, where N ≥ 1. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1a This is a side sectional view of a photoelectric detection unit along the Z-axis in one embodiment;

[0033] Figure 1b This is a top view of a photoelectric detection unit according to one embodiment;

[0034] Figure 2a This is a side cross-sectional view of a photoelectric detection assembly stacked along the Y-axis in one embodiment, along the Z-axis.

[0035] Figure 2b Correspondence of one embodiment Figure 2a A top view of the linear array structure;

[0036] Figure 2c This is a schematic diagram of a linear array structure stacked along the Y-axis in one embodiment;

[0037] Figure 2d This is a schematic diagram of a linear array structure stacked along the Y-axis, according to another embodiment.

[0038] Figure 3a This is a side cross-sectional view along the Z-axis of a photoelectric detection assembly arranged side by side along the Z-axis in one embodiment.

[0039] Figure 3b Correspondence of one embodiment Figure 3a A top view of the photoelectric detection component;

[0040] Figure 3c This is a schematic diagram of a linear array structure arranged side-by-side along the Z-axis in one embodiment.

[0041] Figure 4a A side cross-sectional view along the Z-axis of a photoelectric detection assembly arranged side by side along the Y-axis and Z-axis directions, according to one embodiment;

[0042] Figure 4b For one embodiment Figure 4a A top view of the photoelectric detection component;

[0043] Figure 4c This is a schematic diagram of the structure of an area array according to one embodiment;

[0044] Figure 4d This is a schematic diagram of the area array structure according to another embodiment;

[0045] Figure 5 This is a schematic diagram showing the positional relationship between the first and second sides of each photoelectric detection unit in one embodiment.

[0046] Figure 6 This is a schematic diagram showing the positional relationship between the first and second sides of each photoelectric detection unit in another embodiment;

[0047] Figure 7 This is a schematic diagram of the structure of a laser ranging device according to one embodiment;

[0048] Figure 8 This is a schematic diagram of the structure of a laser ranging device according to another embodiment;

[0049] Figure 9 A schematic diagram of a laser ranging device with multiple laser emitters;

[0050] Figure 10 This is the working optical path diagram of a laser rangefinder.

[0051] Component designation explanation:

[0052] Photoelectric detection unit: 10; substrate: 100; first side: 100A; second side: 100B; photoelectric detection structure: 110; back-end circuit: 120; data port: 121; optical components: 200; laser emitter: 300. Detailed Implementation

[0053] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0055] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, parts, regions, layers, doping types, and / or portions, these elements, parts, regions, layers, doping types, and / or portions should not be limited by these terms.

[0056] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as “below,” “under,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0057] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.

[0058] like Figure 1a and Figure 1b As shown, where, Figure 1a This is a side sectional view of the photoelectric detection unit along the Z-axis (perpendicular to the paper). Figure 1b This is a top view of the photoelectric detection unit.

[0059] The photoelectric detection unit 10 includes a substrate 100, a photoelectric detection structure 110, a back-end circuit 120, and an optical component 200. The photoelectric detection structure 110 and the back-end circuit 120 are both formed within the substrate 100 and arranged side-by-side along the X-axis, which is parallel to the top surface of the substrate 100. The photoelectric detection structure 110 receives optical signals and converts them into electrical signals. The back-end circuit 120 processes the electrical signals generated by the photoelectric detection structure 110 and outputs them through a data port 121. The optical component 200 is stacked on the substrate 100 along the Y-axis, which is perpendicular to the top surface of the substrate 100. Specifically, the optical component 200 may be located above the photoelectric detection structure 110. The optical component 200 has a light-incident surface facing the side of the photoelectric detection unit 10. This light-incident surface receives light incident from the side of the photoelectric detection unit 10 and adjusts the path of the light so that it enters the photoelectric detection structure 110; that is, the light received by the optical component 200 comes from the side of the photoelectric detection unit. In one embodiment, the light received by the optical component 200 is incident on the optical component 200 in a direction parallel to the X-axis. The optical component 200 then adjusts the light path to deflect the light and direct it onto the photodetector structure 110. In other embodiments, the light-emitting component 200 receives light incident from the side of the photodetector unit. This light does not necessarily need to be parallel to the X-axis; the incident direction of the light can also be at a certain angle to the X-axis, i.e., obliquely incident on the light-emitting surface of the optical component 200. The optical component then changes the light path and directs the light onto the photodetector structure 110. It should be noted that the dimensions and dimensional relationships of the various structures in this application are not limited. The morphology and dimensions of the various structures shown in the accompanying drawings are only for illustrative purposes and are not intended to be limiting.

[0060] The aforementioned photodetector unit, photodetector structure 110, and back-end circuit 120 are all integrated within the same substrate 100 and arranged side-by-side along the X-axis. An optical component 200 is disposed above the photodetector structure 110. The optical component 200 can receive light incident from one side of the substrate 100 and adjust the path of the light so that it enters the photodetector structure 110. In conventional technology, the optical component receives light incident from above and directs it onto the photodetector structure. However, in this application, the optical component 200 receives light incident from its side and directs it onto the photodetector structure 110. This facilitates the stacking of multiple photodetector units to form a photodetector linear array or a photodetector area array. Furthermore, since the back-end circuit 120 and the photodetector structure 110 are integrated on the same substrate 100, bonding processes are saved, and when multiple photodetector units are assembled into a photodetector linear array or a photodetector area array, there is no problem with routing the back-end circuit 120. Meanwhile, when multiple photoelectric detection units are assembled into a photoelectric detection linear array or a photoelectric detection surface array, the photoelectric detection linear array or photoelectric detection surface array can be disassembled or reassembled as needed to flexibly adjust the structure of the photoelectric detection linear array or photoelectric detection surface array.

[0061] Understandably, the photoelectric detection structure 110 includes a photoelectric conversion structure and a photosensitive layer on the photoelectric conversion structure. The photosensitive layer is the structure of the photoelectric detection structure 110 that receives light signals. In this application, the distribution of the photoelectric conversion structure and the photosensitive layer of the photoelectric detection structure 110 is not limited, as long as the photosensitive layer can receive the light deflected by the optical component 200. In this embodiment, the photosensitive layer is located on the top surface of the substrate, and the light deflected by the optical component 200 easily incident on the photosensitive layer.

[0062] In one embodiment, the photodetector structure 110 is any one of a single-photon detector (SPAD), a single-photon detector array (SPAD Array), a silicon photomultiplier tube (SiPM), or a silicon photomultiplier tube (SiPMArray).

[0063] In one embodiment, the optical component 200 includes a reflective structure that reflects light incident on the incident surface onto the photodetector structure. Specifically, the angle between the incident surface of the optical component and the top surface of the substrate 100 is θ, which can be adjusted according to actual conditions. In one embodiment, 0° < θ ≤ 90°, specifically 45°. In another embodiment, the optical component 200 includes a refractive structure. Light incident from the side of the photodetector unit 10 is incident on the incident surface of the optical component 200, and then the refraction of the light by the optical component 200 changes the light path so that the refracted light is incident on the photodetector structure 110. Of course, in other embodiments, other optical components can also be used, as long as they can change the light path.

[0064] In one embodiment, the number of data ports 121 on the photodetector unit 10 is greater than or equal to one. That is, the back-end circuit 120 can form only one data port 121 to transmit data, or it can form multiple data ports 121 to transmit data, for example, forming two data ports 121, one of which is used as a signal input terminal and the other is used as a signal output terminal. It is understood that the back-end circuit can also form multiple data ports 121. In this application, the number of data ports 121 is not limited.

[0065] This application also relates to a photoelectric detection assembly, comprising a plurality of the aforementioned photoelectric detection units. Each photoelectric detection unit has a first side 100A and a second side 100B disposed opposite to each other in the X-axis direction, wherein the first side 100A is located on the side of the photoelectric detection structure 110 facing away from the rear-end circuit 120. Specifically, the first side 100A and the second side 100B may be perpendicular to the X-axis direction, respectively. The photoelectric detection units are arranged along the Y-axis direction and / or the Z-axis direction, with the first side 100A of each photoelectric detection unit located on the same side of the photoelectric detection assembly, wherein the X-axis, Y-axis, and Z-axis are perpendicular to each other.

[0066] In one embodiment, such as Figure 2a and Figure 2b As shown, where, Figure 2a This is a side cross-sectional view of the photoelectric detection component along the Z-axis. Figure 2b This is a top view of the photoelectric detection assembly. Each photoelectric detection unit has a first side surface 100A and a second side surface 100B perpendicular to the X-axis. The first side surface 100A is located on the side of the photoelectric detection structure 110 opposite to the rear circuit 120. The photoelectric detection units are stacked sequentially along the Y-axis to form a linear array structure, and the first side surface 100A of each photoelectric detection unit is located on the same side of the linear array structure. The stacking method of the photoelectric detection units along the Y-axis can be flexibly selected. Figure 2c The diagram shows a schematic representation of a linear array structure formed by stacking photodetector units 10 along the Y-axis in one embodiment. In this embodiment, the optical components 200 of each photodetector unit and the substrate 100 have the same positional relationship, for example, in... Figure 2c In each photoelectric detection unit, the optical component 200 is located above the substrate 100 in the view, and the optical component 200 and the substrate 100 are arranged alternately in sequence. For example... Figure 2d The diagram shows a linear array structure formed by stacking photoelectric detection units 10 along the Y-axis in another embodiment. In this embodiment, adjacent photoelectric detection units are symmetrical to each other. That is, during the stacking process, some photoelectric detection units are flipped up and down before being stacked.

[0067] In one embodiment, such as Figure 3a and Figure 3b As shown, where, Figure 3a This is a side cross-sectional view of the photoelectric detection component along the Z-axis. Figure 3b This is a top view of the photoelectric detection assembly. Each photoelectric detection unit has a first side surface 100A and a second side surface 100B arranged opposite each other in the X-axis direction. The first side surface 100A is located on the side of the photoelectric detection structure 110 away from the rear-end circuit 120. The photoelectric detection units are arranged side by side in sequence along the Z-axis direction to form a linear array structure, and the first side surface 100A of each photoelectric detection unit is located on the same side of the linear array structure. Figure 3c The diagram shows a linear array structure formed by the photoelectric detection units 10 arranged side by side along the Z-axis.

[0068] In one embodiment, such as Figure 4a and Figure 4b As shown, where, Figure 4a This is a side cross-sectional view of the photoelectric detection component along the Z-axis. Figure 4b This is a top view of the photoelectric detection assembly. Each photoelectric detection unit has a first side surface 100A and a second side surface 100B arranged opposite each other along the X-axis. The first side surface 100A is located on the side of the photoelectric detection structure 110 away from the rear-end circuit 120. The photoelectric detection units are stacked sequentially along the Y-axis and arranged side by side along the Z-axis to form an array structure, and the first side surface 100A of each photoelectric detection unit is located on the same side of the array structure. Figure 4c The diagram shows a schematic representation of an array structure formed by arranging photoelectric detection units 10 along the Y-axis and Z-axis directions in one embodiment. In this embodiment, the substrate 100 and optical components 200 are alternately arranged along the Y-axis. Figure 4d The diagram shows a schematic of the array structure formed by arranging photoelectric detection units 10 along the Y-axis and Z-axis in another embodiment. In this embodiment, adjacent photoelectric detection units are symmetrical along the Y-axis. That is, during the stacking process, some photoelectric detection units are flipped up and down before being stacked.

[0069] In one embodiment, such as Figure 5 As shown, the first sides 100A of each photodetector unit are aligned with each other, and the second sides 100B of each photodetector unit are aligned with each other, meaning the formed photodetector assembly also has flat sides. In one embodiment, as... Figure 6 As shown, the first sides 100A of each photoelectric detection unit are aligned with each other, while the second sides 100B of each photoelectric detection unit form a stepped structure. In other embodiments, the positional relationship of the first sides 100A and the positional relationship of the second sides of each photoelectric detection unit can be flexibly set according to the actual situation.

[0070] In one embodiment, the data ports 121 of the back-end circuits 120 of the various photoelectric detection components formed above are connected, and the processed electrical signals of each back-end circuit 120 are output sequentially through a few or even just one data line. In one embodiment, as... Figure 2a or Figure 3b As shown, data port 121 extends from the top and / or bottom surface of substrate 100, and data ports between adjacent photodetector units are connected sequentially. In one embodiment, as... Figure 5 or Figure 6 As shown, each photoelectric detection unit has a data port 121 led out from the second side 100B. The data ports 121 led out from the second side 100B are interconnected so that the electrical signals processed by each photoelectric detection unit are combined and output sequentially through a data line.

[0071] The aforementioned photoelectric detection components are all assembled from the aforementioned photoelectric detection units. The assembled photoelectric detection components receive incident light from their sides and deflect the light onto the photoelectric detection structures of each unit. Since each photoelectric detection unit is an independent unit, they can be flexibly assembled as needed to form the required photoelectric detection product. Furthermore, the assembled photoelectric detection linear arrays and photoelectric detection area arrays can be flexibly disassembled and rearranged, offering high flexibility. Simultaneously, since the back-end circuit 120 and the photoelectric detection structure 110 are integrated within the same substrate 100, the wiring of the back-end circuit 120 is not involved after the assembly of multiple photoelectric detection units, thus avoiding the problem of difficult wiring of the back-end circuit 120.

[0072] This application also relates to a laser ranging device, including a laser emitter and a photoelectric detection component, wherein the photoelectric detection component is any of the aforementioned photoelectric detection components, and the light emitted by the laser emitter is reflected by the target object and emitted toward the side of the photoelectric detection component.

[0073] In one embodiment, the laser emitter 300 is sandwiched between photodetector units in the photodetector assembly. For example... Figure 7 As shown, the photoelectric detection component is a linear array structure, with the laser emitter 300 sandwiched between the upper and lower (or left and right) photoelectric detection units. Figure 8 As shown, the photoelectric detection component is a planar array structure, with the laser emitter 300 located in the center of the array structure and surrounded by photoelectric detection units. In one embodiment, as... Figure 9 As shown, the laser ranging device includes N laser emitters, all of which are distributed within the photoelectric detection component, where N ≥ 1, and can be uniformly distributed within the photoelectric detection component.

[0074] In the above embodiment, by placing the laser emitter 300 within the photoelectric detection assembly to form a "receive-transmit-receive" splicing configuration, on the one hand, the distance between the laser emitter 300 and the photoelectric detection unit 10 is small, resulting in less parallax. On the other hand, as... Figure 10 As shown, the laser emitter 300 has a light-emitting surface 300A, which emits light. In this embodiment, the first side 100A of the photodetector assembly and the light-emitting surface 300A of the laser emitter 300 embedded in the photodetector assembly face the same side of the photodetector assembly, for example, both facing the X-axis direction shown in the figure. The laser emitter 300 emits light towards the target object, and the light reflected back by the target object can be detected by multiple photodetector units around the laser emitter 300, thereby maximizing the detection of light.

[0075] Embodiments of the application are described herein with reference to cross-sectional views illustrating preferred embodiments (and intermediate structures), thus allowing for the expectation of variations in the illustrated shape due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the application should not be limited to the specific shapes of the areas shown herein, but rather include shape deviations due to, for example, manufacturing techniques. For instance, the structures shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of the device structures and do not limit the scope of the application.

[0076] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A photoelectric detection unit, characterized in that, include: Base; A photoelectric detection structure is formed within the substrate and is used to receive optical signals and convert them into electrical signals. The photoelectric detection structure includes a photoelectric conversion structure and a photosensitive layer located on the photoelectric conversion structure, the photosensitive layer being used to receive optical signals; A back-end circuit, formed within the substrate, is used to process the electrical signal generated by the photodetector structure and output it through a data port. The data port is used to connect with the data port of an adjacent photodetector unit. The back-end circuit and the photodetector structure are arranged side by side along the X-axis direction, which is parallel to the top surface of the substrate. An optical component is stacked on the substrate along the Y-axis direction. The optical component has a light-incident surface facing the side of the photodetector unit. The light-incident surface receives light rays incident from the side of the photodetector unit and adjusts the path of the light rays so that the light rays are incident on the photodetector structure. The Y-axis direction is perpendicular to the top surface of the substrate.

2. The photoelectric detection unit as described in claim 1, characterized in that, The optical components are located above the photoelectric detection structure.

3. The photoelectric detection unit as described in claim 1, characterized in that, The optical component includes a reflective structure, which reflects light incident on the incident light surface onto the photoelectric detection structure.

4. The photoelectric detection unit as described in any one of claims 1 to 3, characterized in that, The photoelectric detection structure includes any one of a single single-photon detector, a single-photon detector array, a silicon photomultiplier tube, and a silicon photomultiplier tube array.

5. A photoelectric detection component, characterized in that, The device includes a plurality of photoelectric detection units as described in any one of claims 1 to 4, each photoelectric detection unit having a first side and a second side disposed opposite to each other in the X-axis direction, wherein the first side is located on the side of the photoelectric detection structure away from the rear-end circuit, the photoelectric detection units are arranged along the Y-axis direction and / or the Z-axis direction, and the first side of each photoelectric detection unit is located on the same side of the photoelectric detection assembly.

6. The photoelectric detection component as described in claim 5, characterized in that, The first sides of each photoelectric detection unit are aligned with each other, and the second sides of each photoelectric detection unit are aligned with each other.

7. The photoelectric detection component as described in claim 5, characterized in that, The first sides of each photoelectric detection unit are aligned with each other, and the second sides of each photoelectric detection unit form a stepped structure.

8. The photoelectric detection component according to any one of claims 5 to 7, characterized in that, The data port is led out from the top and / or bottom surface of the substrate, and the data ports of adjacent photoelectric detection units are connected in sequence.

9. The photoelectric detection component according to any one of claims 5 to 7, characterized in that, The data ports extend from the second side of the substrate, and each data port is interconnected.

10. A laser ranging device, characterized in that, It also includes a laser emitter and a photoelectric detection component, wherein the photoelectric detection component is the photoelectric detection component according to any one of claims 5 to 9, and the light emitted by the laser emitter is reflected by the target object and then emitted toward the side of the photoelectric detection component.

11. The laser ranging device as described in claim 10, characterized in that, The laser emitter is sandwiched between the photoelectric detection units.

12. The laser ranging device as described in claim 11, characterized in that, The laser ranging device includes N laser emitters, which are uniformly distributed within the photoelectric detection component, where N ≥ 1.

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