High frequency supply device and high frequency electric power supply method

Abstract

The present invention provides a high-frequency supply device and a method for supplying high-frequency electric power. The high-frequency supply device includes: an amplifier that amplifies the high frequency supplied from an oscillator and supplies it to a load; a parameter detection unit that detects the parameters of the current, voltage or electric power supplied from the amplifier to the load; a current supply unit that supplies a driving current to the driving amplifier; a command signal output unit that outputs a command signal that changes the amplification factor of the amplifier based on the detected parameter so that the parameter becomes a target value; and a first abnormality detection unit or a second abnormality detection unit, wherein the first abnormality detection unit monitors the command signal to detect whether there is an abnormality, and the second abnormality detection unit includes a current detection unit that detects the driving current and a current data storage unit that stores the upper limit value and the lower limit value of the driving current, and detects whether there is an abnormality based on the upper limit value and the lower limit value. The present invention can grasp the degradation of the amplifier or the abnormality of the detector when supplying high-frequency electric power.

Description

Technical Field

[0001] The present invention relates to a high-frequency supply device and a method for supplying high-frequency electric power. Background Art

[0002] It is known that in the manufacturing process of semiconductor devices, for example, when performing film forming processing and etching processing on a substrate, a plasma processing device using plasma is used. Such a plasma processing device has, for example, a high-frequency supply device that supplies high-frequency electric power amplified by an amplifier to a plasma electrode. In addition, for example, a processing gas is supplied into a processing container, and high-frequency electric power is supplied to the plasma electrode to form a high-frequency electric field in the processing container, and the processing gas is plasma-formed to perform plasma processing on the substrate.

[0003] For example, Patent Document 1 describes a high-frequency power supply device having a plurality of vacuum tubes connected in parallel. The high-frequency power supply device is provided with: a voltage calculation unit that calculates the voltage change rate of each vacuum tube relative to the average value of the cathode voltage of the plurality of vacuum tubes; and a current calculation unit that calculates the current change rate of each vacuum tube relative to the average value of the current of the plurality of vacuum tubes. Furthermore, the voltage change rate of each vacuum tube is compared with a voltage life setting value, and the current change rate is compared with a current life setting value, thereby judging whether each vacuum tube has reached the end of its life.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-143368 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] The present invention provides a technology for detecting degradation of an amplifier or abnormality of a detection unit when high-frequency electric power is supplied.

[0009] Technical solutions for solving technical problems

[0010] The high-frequency supply device of the present invention includes: an amplifier unit that amplifies the high frequency supplied from an oscillator and supplies it to a load; a parameter detection unit that detects the parameters of the current, voltage or electric power supplied from the amplifier unit to the load; a current supply unit that supplies a driving current to drive the amplifier unit; a command signal output unit, which outputs a command signal for changing the amplification factor of the amplifier unit based on the detected parameter so that the parameter becomes a target value; and a first abnormality detection unit or a second abnormality detection unit, wherein the first abnormality detection unit monitors the command signal to detect whether there is an abnormality, and the second abnormality detection unit includes a current detection unit that detects the driving current and a current data storage unit that stores the upper limit value and the lower limit value of the driving current, and detects whether there is an abnormality based on the upper limit value and the lower limit value.

[0011] Effects of the Invention

[0012] According to the present invention, it is possible to detect degradation of the amplifier or abnormality of the detection unit when high-frequency electric power is supplied. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a block diagram showing a high-frequency supply device according to one embodiment.

[0014] Figure 2 This is a block diagram showing a controller provided in the high-frequency supply device.

[0015] Figure 3 This is a graph showing the upper limit value and the lower limit value of the operation amount corresponding to the target value of the electric power.

[0016] Figure 4 This is a graph showing the upper limit and lower limit of the current value corresponding to the target value of the electric power.

[0017] Figure 5 It is a cross-sectional view showing a plasma processing apparatus having the high frequency supply device.

[0018] Figure 6 It is a block diagram showing a high-frequency supply device according to another embodiment.

[0019] Figure 7 This is a graph showing the upper limit value and the lower limit value of the temperature corresponding to the target value of the electric power.

[0020] Description of Reference Numerals

[0021] 1High frequency supply device

[0022] 2 Amplifier

[0023] 3 Amplification element

[0024] 6 Electric power detection unit

[0025] 20 High Frequency Oscillator

[0026] 22 Current supply unit

[0027] 93B Operation amount abnormality detection unit

[0028] 93C Abnormal current detection unit. DETAILED DESCRIPTION

[0029] The high frequency supply device of the present invention is described. Figure 1 As shown, the high frequency supply device 1 is configured to amplify the high frequency electric power by the amplifier 2 and then supply it to the load 4. The amplifier 2, which is the amplifier section on the rear stage, is configured by combining a plurality of transistors. Figure 1 Reference numeral 22 is a current supply unit for supplying a direct current as a driving current to the amplifier 2. The high frequency supply device 1 of this example measures the high frequency electric power input to the load 4, and based on the measured value of the high frequency electric power, adjusts the gain of the amplifier 2 to increase or decrease the gain so that the high frequency electric power reaches a set target value.

[0030] like Figure 1 As shown, the high frequency supply device 1 includes a power detection unit 6 for measuring high frequency power as an example of a parameter detection unit. The power detection unit 6 measures, for example, a high frequency voltage value and calculates a power measurement value based on the amplitude of the voltage value.

[0031] In addition, the high-frequency supply device 1 includes a controller (control device) 5 as a command signal output unit. The controller 5 outputs a digital signal as a command signal for changing the amplification factor of the high-frequency signal in the amplifier element 3 based on the difference between the target value of the electric power set by the host device 100 and the electric power measurement value of the electric power detection unit 6, and the details will be described later.

[0032] The high-frequency supply device 1 includes a high-frequency oscillator 20 and an amplifier element 3 that increases or decreases the output of the high frequency supplied from the high-frequency oscillator 20 to the amplifier 2. The amplifier element 3, which is an amplifier section on the front-stage side, includes a D / A converter 31 and an amplifier circuit 32 composed of transistors and the like. In the amplifier element 3, a command value (command signal) as a digital signal is converted into an analog voltage by the D / A converter 31. The amplifier circuit 32 amplifies the high-frequency signal at an amplification factor corresponding to the analog voltage.

[0033] Here, in the high-frequency supply device 1, the amplifier 2 may gradually deteriorate during the high-frequency supply and eventually fail. Conventionally, for example, control is performed to monitor the value of the electric power measurement value, and when the electric power measurement value is lower than a threshold value, an alarm is sounded or the device is stopped. However, in the case of such control, the judgment is made based on the situation that the high-frequency electric power supplied to the load 4 becomes low during the operation of the device, so there is a problem that the electric power on the load 4 side becomes insufficient and the processing on the load 4 side is poor. As described later, in the case where the load 4 is a component of a processing device constituting a semiconductor wafer W, the processing of the semiconductor wafer W becomes poor and the yield is reduced. Moreover, as described above, when the amplifier 2 fails and cannot be used, it takes a long time for the high-frequency supply device 1 to recover when preparing the replacement parts and replacement operations from that moment, and during this period, the processing of the semiconductor wafer W is stagnant.

[0034] Therefore, in the high frequency supply device 1 of the present invention, the controller 5 monitors the above-mentioned operation amount and the current value of the driving current supplied from the current supply unit 22 to the amplifier 2, thereby being able to detect the degradation of the amplifier 2 before the electric power output from the amplifier 2 is significantly reduced.

[0035] Figure 2 is a block diagram showing the controller 5. The controller 5 includes a CPU 91, and includes an electric power control unit 93A, an operation amount abnormality detection unit 93B as a first abnormality detection unit, and a current abnormality detection unit 93C as a second abnormality detection unit. In addition, Figure 2 90 in the figure is a bus. The controller 5 also includes a memory 92, in which a command value storage unit 92A, an operation amount data storage unit 92B, and a current data storage unit 92C are provided. In addition, the controller 5 is configured to be connected to an alarm 94, and can receive a target value of electric power from the host device 100, and a measured value of electric power from the electric power detection unit 6. Furthermore, the controller 5 is configured to receive a current value from the current detection unit 21, wherein the current detection unit 21 is configured to detect the current used to drive the controller 5. Figure 1 The current value of the direct current (DC) of amplifier 2 is shown.

[0036] The electric power control unit 93A outputs a digital signal as an operation amount based on the difference between the target value of the electric power input from the host device 100 and the measured value of the electric power input from the electric power detection unit 6 as described above. The digital signal is output so that the larger the difference, the larger the amplification factor of the amplifier element 3 (the larger the operation amount). As described above, the digital signal is output from the controller 5, and the above-mentioned amplification factor changes according to the change of the digital signal. However, for the convenience of explanation, in each of the following diagrams, the change of the digital signal is regarded as the change of the simulated numerical parameter, and the simulated numerical parameter is described as the operation amount.

[0037] The operation amount abnormality detection unit 93B of this example determines the abnormality of the amplifier 2 based on the operation amount and the upper and lower threshold values ​​of the operation amount stored in the operation amount data storage unit 92B. Figure 3 is a diagram schematically showing a relational expression stored in the operation amount data storage unit 92B. Figure 3 The range indicated by the oblique lines in represents a value included between the first upper limit threshold and the first lower limit threshold of the operation amount, and the dotted area outside the area indicated by the oblique lines represents a value included between the second upper limit threshold and the second lower limit threshold.

[0038] Regarding the first lower threshold value S1 of the operation amount min For example, the target value of electric power is set to P, and a new amplifier 2 is used to output high frequency, and the lower limit value of the operation amount assumed when the electric power control unit 93A controls the high frequency electric power is set. In addition, the second lower limit threshold value S2 of the operation amount min is lower than the first lower threshold S1 min The low value is set based on a value that can clearly be determined as a device failure.

[0039] In addition, regarding the first upper limit threshold value S1 of the operation amount max For example, the target value of electric power is set to P, and the amplifier 2 that can output high frequency with sufficient voltage but deteriorates due to use is used to output high frequency, and the upper limit value of the operation amount assumed when the electric power control unit 93A controls the high frequency electric power is set. And the second upper limit threshold value S2 of the operation amount max is higher than the first upper limit threshold S1 max The high value is set based on a value of the operation amount at which it can be determined that the amplifier 2 has a malfunction.

[0040] In the high frequency supply device 1, when the target value P of electric power increases, the amplification factor needs to be increased, and the operation amount also increases. Therefore, the upper and lower thresholds of the operation amount are set to larger values ​​as the target value P of electric power input from the host device 100 increases.

[0041] The operation amount abnormality detection unit 93B compares the operation amount output from the amplifier 32 with a first upper limit threshold value S1 of the operation amount set based on the target value P of the electric power. max , the first lower threshold S1 min , the second upper limit threshold S2 max , the second lower threshold S2 min , to detect whether there is an anomaly.

[0042] Furthermore, when the operation amount is greater than the first upper limit threshold S1 max or below the first lower threshold S1 minIn the case of the degradation of the amplifier 2, the alarm device 94 has the function of sounding an alarm. max or below the second lower threshold S2 min In the case of a fault, it has a function of stopping the high frequency supply device to perform maintenance such as replacing the amplifier 2.

[0043] The current abnormality detection unit 93C of this example compares the current value of the drive current driving the amplifier 2 with the upper and lower threshold values ​​of the current value stored in the current data storage unit 92C to determine the abnormality of the amplifier 2 . Figure 4 is a diagram schematically showing a relational expression stored in the current data storage unit 92C. Figure 3 The range indicated by the oblique lines in represents a value included between the first upper limit threshold and the first lower limit threshold of the current value, and the dotted area outside the area indicated by the oblique lines represents a value included between the second upper limit threshold and the second lower limit threshold of the current value.

[0044] Regarding the first lower limit threshold value A1 of the current value min For example, the target value of electric power is set to P, and a new amplifier 2 is used to output high frequency, and the lower limit threshold of the current value assumed when the electric power control unit 93A controls the high frequency electric power is set. And the second lower limit threshold of the current value A2 max is lower than the first lower threshold A1 max The low value is set based on a value that can clearly be determined as a device failure.

[0045] In addition, regarding the first upper limit threshold value A1 of the current value max For example, the target value of electric power is set as P, and the amplifier 2 that can output high frequency with sufficient voltage but deteriorates due to use is used to output high frequency, and the upper limit value of the current value assumed when the electric power control unit 93A controls the high frequency electric power is set. And the second upper limit threshold value A2 of the current value max is higher than the first upper limit threshold A1 max The high value is set based on a value of the operation amount at which it can be determined that the amplifier 2 has a malfunction.

[0046] In the high frequency supply device 1, when the target value P of electric power increases, the amplification factor needs to be increased, so the current value also increases. Therefore, the upper limit threshold of the current value and the lower limit threshold of the current value are set to become larger values ​​as the target value P of electric power input from the host device 100 increases.

[0047] The current abnormality detection unit 93C compares the current value of the drive current supplied to the amplifier 2 with the first upper limit threshold value A1 set based on the current value of the target electric power value P. max , the first lower threshold A1 min, the second upper limit threshold A2 max , the second lower threshold A2 min , to determine whether there is an abnormality.

[0048] Moreover, when the current value is greater than the first upper limit threshold value A1 max or below the first lower threshold A1 min In the case of the deterioration of the amplifier 2, the alarm device 94 is used to sound an alarm. In addition, when the current value is greater than the second upper limit threshold A2 max or below the second lower threshold A2 min In this case, the high frequency supply device 1 is stopped to perform maintenance such as replacing the amplifier 2.

[0049] The function of the high frequency supply device 1 of the present invention is described. When the power of the high frequency supply device 1 is turned on, the target value P of the electric power is input to the controller 5 from the upper device 100. At this time, the high frequency electric power is not supplied to the load 4, so the controller 5 outputs the operation amount to the amplifier element 3 based on the difference between the target value P of the electric power and the electric power measurement value of the electric power detection unit 6. In the amplifier element 3, the high frequency is amplified at an amplification factor corresponding to the operation amount and output to the amplifier 2, and then the high frequency is amplified by the amplifier 2 and output to the load 4.

[0050] The operation amount rises sharply, and stabilizes to a certain value as the deviation between the target value P of electric power and the measured value of electric power becomes smaller. For example, after the controller 5 starts to output the command value to the amplification factor adjustment unit 3, after a predetermined time, the controller 5 obtains the operation amount at a predetermined interval and calculates, for example, an average value. In the following description, the operation amount used in the comparison of each threshold value is the average value.

[0051] The operation amount abnormality detection unit 93B compares the operation amount with the upper and lower thresholds of the operation amount set based on the target value P of the electric power. In addition, the current value of the drive current of the amplifier 2 detected by the current detection unit 21 is input to the controller 5. Furthermore, the current abnormality detection unit 93C compares the current value with the upper and lower thresholds of the current value set based on the target value P of the electric power.

[0052] When the amplifier 2 is not seriously degraded and functions normally, the operation amount converges to Figure 3 The first upper limit threshold value S1 of the operation amount at the target current value P is shown in FIG. max The first lower threshold S1 min In addition, the current value converges to Figure 4 The first upper limit threshold value A1 of the current value at the target current value P is shown in FIG. max With the first lower threshold A1 minTherefore, the operation amount abnormality detection unit 93B and the current abnormality detection unit 93C do not cause the alarm device 94 to sound an alarm and continue to supply the high frequency to the load 4 side.

[0053] Here, during the use of the high-frequency supply device 1, the amplifier 2 gradually deteriorates. As a result, there is a tendency for the high-frequency electric power output to become lower relative to the operation amount input to the amplifier 2. Therefore, the difference between the target value P of the electric power and the measured value of the electric power becomes larger, and the operation amount outputs a larger value so as to further increase the amplification factor of the amplifier element 3. In addition, since the resistance of the amplifier 2 increases due to the degradation of the amplifier 2, the current value of the drive current of the amplifier 2 increases.

[0054] When the degree of degradation of the amplifier 2 increases, for example, when the operation amount input to the amplifier 2 is compared with the upper and lower thresholds of the operation amount set for the target value P of the electric power by the operation amount abnormality detection unit 93B, and the operation amount is greater than the first upper threshold S1, for example, max As a result, the operation amount abnormality detection unit 93 causes the alarm device 94 for notifying the degradation of the amplifier 2 to sound an alarm.

[0055] For example, when the operation amount input to the amplifier 2 is within the first upper limit threshold value S1 of the operation amount, max The first lower threshold S1 min In the case of the range of max When the amplifier 2 is degraded, the alarm 94 is caused to sound an alarm.

[0056] As described above, when the operation amount input to the amplifier 2 is large or the current value of the amplifier 2 driving current increases, the alarm device 94 sounds an alarm, and the user can understand the degradation of the amplifier 2. At this time, in the amplifier 2, the input is larger than the upper limit threshold value S1 of the operation amount set for the target value P of the electric power. max Therefore, the amplifier 2 receives a large operation amount corresponding to the degradation. Therefore, even if the amplifier 2 is degraded, it can output a high frequency with a large electric power, so that a high frequency with sufficient electric power can be supplied to the load 4 side. As described above, at the stage where the electric power of the high frequency supplied to the load 4 side is sufficient, the user can grasp the degradation of the amplifier 2, for example, can prepare a replacement high frequency supply device, and can perform processing of a stop plan.

[0057] If the high frequency supply device 1 is still driven after the alarm 94 sounds an alarm, as the degradation of the amplifier 2 progresses, the operation amount corresponding to the target value P of the electric power further increases. Therefore, the final operation amount exceeds the second upper limit threshold value S2 maxAt this time, the operation amount abnormality detection unit 93B, for example, causes the alarm 94 to sound an alarm and stops the high-frequency supply device 1 .

[0058] As the degradation of the amplifier 2 progresses, the current value corresponding to the target value P of the electric power further increases. When the current value exceeds the second upper limit threshold value A2 max When, for example, the alarm 94 is also sounded and the high-frequency supply device 1 is stopped.

[0059] In addition, for example, when the power detection unit 6 has a malfunction, the power measurement value may become larger. In this case, the difference between the power target value P and the power measurement value becomes smaller, the command value becomes smaller, and thus the operation amount becomes smaller.

[0060] In this embodiment, when monitoring the operation amount, it is monitored whether the operation amount is above the lower limit threshold of the amplification factor corresponding to the target value P of the electric power. Therefore, as described above, when the amplification factor is too small, the operation amount is lower than the first lower limit threshold S1. min When the operation amount is lower than the second lower limit threshold value S2, the alarm 94 sounds an alarm, and the user can understand the malfunction of the electric power detection unit 6. min When the high frequency supply device 1 is stopped.

[0061] In addition, since the operation amount decreases, the electric power output from the amplifier 2 decreases, and thus the current value of the drive current also decreases. In the high frequency supply device 1 of the present invention, when monitoring the current value, the monitoring current value is whether it is above the lower limit threshold value of the current value corresponding to the target value P of the electric power, so that the malfunction of the electric power detection unit 6 can also be grasped.

[0062] Such a high frequency supply device 1 of this embodiment can be applied to, for example, a plasma processing device that processes a semiconductor wafer (hereinafter also referred to as a "wafer") as a substrate using plasma. Figure 5 The processing container 10 is shown in the figure. A stage 15 for holding a wafer W substantially horizontally is provided in the processing container 10 by means of a support column 16. 11 provided on the side of the processing container 10 is a delivery port for the wafer W, and 12 is a gate valve. The processing container 10 is connected to a vacuum exhaust unit 14 via an exhaust pipe 13.

[0063] In addition, a metal shower head 17 for supplying a processing gas for processing the substrate to the wafer W is provided on the top surface of the processing container 10 via an insulating member 17a, and the gas supplied from the processing gas supply source 18 can be supplied into the processing container 10. In addition, the shower head 17 is connected to the high frequency supply device 1 via a matching device 19. Therefore, Figure 1 The load 4 shown corresponds to the shower head 17 in this example.

[0064] In such an apparatus, a processing gas is supplied to a processing container 10 having a vacuum atmosphere, and high-frequency electric power is supplied to a shower head 17, so that a high-frequency electric field is formed in the processing container 10 to turn the processing gas into plasma, and the wafer W is processed. However, when the processing of the wafer W is performed without grasping the degradation of the high-frequency supply device 1, for example, the degradation of the amplifier 2, the amplifier 2 may fail during the processing of the wafer W. As described above, when the amplifier 2 fails during the processing of the wafer W, the high-frequency electric field cannot be formed in the processing container 10, the processing gas cannot be fully turned into plasma, and the processing of the wafer W becomes insufficient, and sometimes the product of the wafer W becomes defective.

[0065] Therefore, by applying the high-frequency supply device 1 of the present invention to the plasma processing device 40, the degradation of the amplifier 2 can be grasped before the amplifier 2 fails. Therefore, it is possible to suppress the occurrence of defective conditions in the product due to the failure of the amplifier 2 when processing the wafer W. In addition, before the failure of the amplifier 2 occurs, it is possible to prepare the high-frequency supply device 1 as a replacement and stop the product processing of the plan, thereby reducing unnecessary downtime caused by the failure when processing the wafer W. In addition, as an example of the load 4, it is not limited to the above-mentioned shower head 17, but it can also be an electrode provided on the mounting table 15. The electrode supplied with high frequency is used to introduce ions in the plasma generated as described above into the wafer W on the mounting table 15.

[0066] The above-mentioned embodiment is configured such that, in the high frequency supply device 1 that amplifies high frequency and supplies it to the load 4, the amplification factor of the amplifier 2 is controlled so that the output high frequency electric power becomes the set electric power target value P. In addition, the operation amount of the operation amplification factor is monitored, and when the operation amount exceeds the value between the upper threshold value and the lower threshold value of the operation amount set in a manner corresponding to the electric power target value P, the alarm 94 is caused to sound an alarm. In addition, the current value of the current for driving the amplifier 2 is monitored, and when the current value exceeds the value between the upper threshold value and the lower threshold value of the current value set in a manner corresponding to the electric power target value P, the alarm 94 is caused to sound an alarm. In this way, the degradation of the amplifier 2 can be grasped.

[0067] In addition, as long as there is one of an operation amount abnormality detection unit 93B that monitors the operation amount to detect whether there is an abnormality, and a current abnormality detection unit 93C that detects the current value of the amplifier 2 to detect whether there is an abnormality, it is possible to detect the degradation of the amplifier 2. However, by providing both the operation amount abnormality detection unit 93B and the current abnormality detection unit 93C, the detection accuracy of the abnormality of the amplifier 2 is further improved.

[0068] The parameter detection unit may also be configured to use a voltage detection unit or a current detection unit that obtains the measured value of the high-frequency voltage or current output from the amplifier 2. Moreover, based on the detected current or voltage, the above-mentioned operation amount is determined, and the abnormality is detected based on this. When the current is detected, it is converted into a voltage to calculate the measured value, which is the same as the case of detecting electric power as described above. Among them, in order to perform control accuracy with high precision, it is preferred to detect electric power.

[0069] In addition, when the amplifier 2 is in a normal state, the range of the upper limit threshold and the lower limit threshold of the operation amount input to the amplifier 2 is different due to the target value P of the electric power. In addition, when the amplifier 2 is in a normal state, the range of the upper limit threshold and the lower limit threshold of the current value of the drive current driving the amplifier 2 is different due to the target value P of the electric power.

[0070] For example, in a plasma processing apparatus, for each recipe performed on a wafer W, for example, the processing time may be different, and the target value P of the high-frequency electric power required may be different. Therefore, for each recipe, the range of the upper and lower thresholds of the operation amount and the range of the upper and lower thresholds of the current value of the drive current may be different. Therefore, it is preferable to set the range of the upper and lower thresholds of the operation amount and the range of the upper and lower thresholds of the current value of the drive current for each target value P of the electric power.

[0071] In addition, for example, the range of the upper and lower thresholds of the operation amount and the range of the upper and lower thresholds of the current value of the drive current may be set for each scheme. In addition, in the above-mentioned Patent Document 1, the degradation of the vacuum tube is detected based on the current supplied to the vacuum tube, but the upper and lower thresholds of the supplied current may be set as in the present invention, and the presence or absence of abnormality may be detected by comparing the upper and lower thresholds.

[0072] In addition, it is also possible to configure the amplifier 2 to detect whether there is an abnormality based on the temperature change of the amplifier 2. The electric power detection unit 6, the controller 5, the amplifier element 3, the voltage supply source 33, the high frequency oscillator 20, and the amplifier 2 are arranged in the housing 201. Figure 6 As shown, the circuit constituting the amplifier 2 is included in, for example, an integrated circuit chip 200. The chip 200 is mounted on a circuit board 202 as a substrate provided in a housing 201. Furthermore, a temperature sensor 203 is provided on the surface of the chip 200, and the controller 5 is configured to be able to obtain the detected temperature of the temperature sensor 203.

[0073] The controller 5 includes, for example, a temperature storage unit 92D storing an upper threshold and a lower threshold of the temperature detected by the temperature sensor 203 corresponding to the target value P of the electric power, and a third abnormality detection unit 93D for comparing the temperature detected by the temperature sensor 203 with the upper threshold and the lower threshold of the temperature detected by the target value P of the electric power. In addition, Figure 6 The controller 5 shown is except Figure 2 In addition to the configuration of the controller 5 shown, the controller 5 also has the configuration of a temperature storage unit 92D and a third abnormality detection unit 93D, but the description thereof is omitted. Figure 7 92D. As described above, the temperature storage unit 92D stores the upper limit threshold T of the temperature set for each target value P of electric power. max and the lower threshold T min .

[0074] For example, when the amplifier 2 degrades and the impedance of the circuit constituting the amplifier 2 increases, the heat becomes larger and the detected temperature becomes higher, so the temperature at which it can be judged that the amplifier 2 has degraded for each electric power target value P is stored as the upper limit threshold of the temperature. In addition, the lower limit threshold of the range of temperatures detected when the amplifier 2 is normally driven is stored as the lower limit threshold of the temperature corresponding to the electric power target value P.

[0075] Furthermore, the third abnormality detection unit 93D causes the alarm device 94 to sound an alarm when the temperature of the chip 200 is higher than the upper threshold value of the temperature set corresponding to the target value P of the electric power. By configuring as described above, it is possible to grasp the degradation of the amplifier 2 based on the heat generated by the amplifier 2, and it is possible to reliably grasp the degradation of the amplifier 2. In addition, due to a malfunction of the temperature sensor 203, the detected temperature may be lower than the lower threshold value. In this case, it is possible to infer a malfunction of the temperature sensor 203.

[0076] With respect to the temperature range detected by the temperature sensor 203, the first upper limit threshold, the second upper limit threshold, the first lower limit threshold, and the second lower limit threshold can be set in the same manner as the range of the operation amount. Moreover, according to the comparison result between the detected temperature and each threshold, an alarm can be output and the operation of the high-frequency supply device 1 can be stopped in a differentiated manner. For the temperature sensor 203, the detected temperature only needs to correspond to the temperature of the chip 200 constituting the amplifier 2, so it can also be set in a position spaced apart from the chip 200 in the housing 201. However, by setting it in the chip 200 as described above, the change in the state of the amplifier 2 can be accurately detected as a temperature change, so it is preferred.

[0077] In addition, in the operation amount abnormality detection unit 93B, when the operation amount is monitored to detect whether the above situation exists, it is not limited to comparing the value of the operation amount with the upper and lower thresholds of the operation amount corresponding to the target value P of the electric power. For example, the rate of change of the operation amount per unit time may be measured, and when the rate of change of the operation amount becomes larger, it may be determined that the amplifier 2 is deteriorated.

[0078] In addition, it is also possible to combine with a method that has been used so far, in which control is performed to monitor the value of the electric power measurement value, and when the electric power measurement value falls below a threshold value, the alarm 94 sounds an alarm or the device is stopped.

[0079] However, the D / A converter 31 in the amplifier element 3 may be included in the controller 5. The amplifier 2 and the amplifier element 3 may be integrated or divided into two or more parts. In this case, the degradation of each amplifier 2 and the amplifier element 3 may be detected by the above-mentioned method.

[0080] In addition, the current value and the operation amount indicating the above-mentioned degradation detected for each amplifier 2 and the amplifying element 3 may be summed up, and the abnormality may be determined based on the summed value. When increasing or decreasing the gain of the amplifier 2, in the above example, the source voltage of the DC voltage (FET (Field effect transistor)) is fixed, and the level of the gate signal is increased or decreased. However, the level of the gate signal may be fixed, and the source voltage may be increased or decreased.

[0081] As described above, the embodiments disclosed this time are illustrative in all aspects and should not be considered restrictive. The above-mentioned embodiments may be omitted, replaced, and changed in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A high frequency supply device, characterized in that: include: An amplifier section that amplifies the high frequency supplied from the oscillator and supplies it to a load; a parameter detection unit for detecting a parameter of a current, a voltage or an electric power supplied from the amplifying unit to the load; a current supply unit for supplying a driving current for driving the amplifying unit; an instruction signal output unit that outputs an instruction signal for changing the amplification factor of the amplifying unit based on the detected parameter so that the parameter becomes a target value; as well as a first abnormality detection unit or a second abnormality detection unit, wherein the first abnormality detection unit monitors the command signal to detect degradation of the amplifier unit before a failure of the amplifier unit, and issues an alarm when degradation of the amplifier unit is detected, and the second abnormality detection unit includes a current detection unit for detecting the drive current and a current data storage unit for storing an upper limit value and a lower limit value of the drive current, and based on the upper limit value and the lower limit value, detects degradation of the amplifier unit before a failure of the amplifier unit, and issues an alarm when degradation of the amplifier unit is detected, The high-frequency supply device is configured to be able to continue driving even after the alarm is issued.

2. The high frequency supply device according to claim 1, characterized in that: The first abnormality detection unit and the second abnormality detection unit are provided.

3. The high frequency supply device according to claim 1 or 2, characterized in that: The amplifier includes an amplifier on the front stage side and an amplifier on the rear stage side. The amplification factor of the amplifier on the front stage side is changed by the command signal. The current detection section detects a driving current supplied to the amplifier section on the subsequent stage side.

4. The high frequency supply device according to claim 1 or 2, characterized in that: The first abnormality detection unit detects an abnormality when at least a command signal corresponding to a command signal greater than an upper limit value of the amplification factor set in advance is output.

5. The high frequency supply device according to claim 4, characterized in that: For each target value of the electric power, at least one of an upper limit value and a lower limit value of the drive current and a command signal corresponding to an amplification factor greater than an upper limit value of the amplification factor is set.

6. The high frequency supply device according to claim 1 or 2, characterized in that: The settings are: A housing for accommodating the amplifying part; a temperature sensor for detecting a temperature within the housing; and A third abnormality detection unit determines whether or not an abnormality exists based on the detected temperature.

7. The high frequency supply device according to claim 6, characterized in that: The amplifier is included in a chip of an integrated circuit mounted on a substrate, and the temperature sensor is provided on a surface of the chip.

8. The high frequency supply device according to claim 1 or 2, characterized in that: The load is a component provided in a processing container that accommodates semiconductor substrates and performs plasma processing on them.

9. A method for supplying high-frequency electric power, characterized in that: include: a step of amplifying the high frequency supplied from the oscillator by an amplifier and supplying the amplified high frequency to a load; a step of detecting a parameter of current, voltage or electric power supplied from the amplifying unit to the load; Based on the detected parameter, output a command signal for changing the amplification factor of the amplifying unit so that the parameter becomes a target value; A step of monitoring the command signal to detect degradation of the amplifier unit before a failure of the amplifier unit, or a step of detecting a drive current driving the amplifier unit and detecting degradation of the amplifier unit before a failure of the amplifier unit based on an upper limit value and a lower limit value of the drive current pre-stored in a current data storage unit; a step of issuing an alarm when degradation of the amplifier is detected; as well as The step of continuing to drive the amplifying part after the alarm is issued.

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