A semiconductor temperature control device and control method thereof

Abstract

The present application relates to a semiconductor temperature control device and a control method thereof. The device includes: a temperature detection module, which is used to perform multi-point detection on the temperature field of a semiconductor laser to obtain multiple temperature measurement values, so as to perform thermal field simulation calculation on the temperature distribution of the semiconductor laser to obtain a temperature field distribution matrix; a heat flow analysis module, which is used to perform heat flux density calculation on the semiconductor laser according to the temperature field distribution matrix to obtain the heat flux density distribution, so as to perform multi-channel pulse width modulation processing on the thermoelectric refrigeration component to obtain a temperature regulation drive signal; a closed-loop control module, which is used to perform adaptive regulation processing on the thermoelectric refrigeration component according to the temperature regulation drive signal to generate a temperature regulation feedback signal, so as to perform closed-loop adjustment on the drive current of the thermoelectric refrigeration component until the thermoelectric refrigeration component maintains the temperature of the semiconductor laser within the target temperature range based on the adjusted drive current. The use of the device can ensure the dynamic balance of temperature regulation.

Description

Technical Field

[0001] The present application relates to the field of semiconductor temperature control technology, and in particular to a semiconductor temperature control device and a control method thereof. Background Art

[0002] In the field of semiconductor temperature control technology, it involves achieving temperature control effects on semiconductor lasers through semiconductor temperature control equipment.

[0003] In related semiconductor temperature control equipment, the temperature regulation of semiconductor lasers is achieved by combining single-point temperature detection with constant power drive. However, this method has disadvantages such as low detection accuracy, delayed control response, and uneven temperature distribution, which leads to insufficient temperature stability of semiconductor lasers and affects their optical performance and service life. Summary of the invention

[0004] Based on this, it is necessary to provide a semiconductor temperature control device, a control method for a semiconductor temperature control device, a computer device and a computer-readable storage medium to address the above-mentioned technical problems, so as to ensure the dynamic control function and the balanced control function during the temperature control process, thereby achieving efficient and accurate temperature control of the semiconductor laser.

[0005] In a first aspect, the present application provides a semiconductor temperature control device, comprising:

[0006] A temperature detection module, used to perform multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain a plurality of temperature measurement values, and perform finite element thermal field simulation calculation processing on the temperature distribution of the semiconductor laser according to the temperature measurement values ​​to obtain a temperature field distribution matrix of the semiconductor laser;

[0007] A heat flow analysis module, used to perform heat flow density calculation processing on different areas of the semiconductor laser according to the temperature field distribution matrix to obtain the heat flow density distribution of the semiconductor laser, and to perform multi-channel pulse width modulation drive control processing on the thermoelectric refrigeration component in the semiconductor temperature control device according to the heat flow density distribution to obtain a temperature adjustment drive signal acting on the thermoelectric refrigeration component;

[0008] The closed-loop control module is used to perform adaptive adjustment processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the temperature adjustment driving signal, generate a temperature adjustment feedback signal, and perform closed-loop dynamic adjustment on the driving current acting on the thermoelectric cooling component according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within a target temperature range based on the adjusted driving current.

[0009] In a second aspect, the present application also provides a control method for a semiconductor temperature control device, comprising:

[0010] Performing multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain a plurality of temperature measurement values, and performing finite element thermal field simulation calculation processing on the temperature distribution of the semiconductor laser according to the temperature measurement values ​​to obtain a temperature field distribution matrix of the semiconductor laser;

[0011] Performing heat flux calculation processing on different regions of the semiconductor laser according to the temperature field distribution matrix to obtain the heat flux distribution of the semiconductor laser, and performing multi-channel pulse width modulation drive control processing on the thermoelectric refrigeration component in the semiconductor temperature control device according to the heat flux distribution to obtain a temperature adjustment drive signal acting on the thermoelectric refrigeration component;

[0012] The thermoelectric cooling component is adaptively adjusted in combination with proportional-integral-differential according to the temperature adjustment driving signal to generate a temperature adjustment feedback signal, and the driving current acting on the thermoelectric cooling component is dynamically adjusted in a closed loop according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within a target temperature range based on the adjusted driving current.

[0013] In a third aspect, the present application further provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the above steps when executing the computer program.

[0014] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program implements the above steps when executed by a processor.

[0015] The semiconductor temperature control device, the control method of the semiconductor temperature control device, the computer device and the computer-readable storage medium, firstly, perform multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain a temperature measurement value, and combine the temperature measurement value with the finite element thermal field simulation calculation to obtain a temperature field distribution matrix, so as to accurately quantify the temperature distribution of the semiconductor laser and provide reliable data support for subsequent thermal management; secondly, calculate the heat flux density distribution of the semiconductor laser according to the temperature field distribution matrix, perform multi-channel pulse width modulation drive control processing on the thermoelectric cooling component in the semiconductor temperature control device according to the heat flux density distribution, generate a temperature adjustment drive signal, thereby realizing multi-channel pulse width modulation drive control of the thermoelectric cooling component, that is, it is possible to achieve refined temperature regulation according to the heat load difference in different regions; thirdly, perform adaptive adjustment processing on the thermoelectric cooling component in combination with proportional integral differential, generate a temperature adjustment feedback signal to perform closed-loop dynamic adjustment on the drive current of the thermoelectric cooling component, thereby ensuring the dynamic control function and balanced control function of the semiconductor device in the temperature control process, realizing efficient and accurate temperature control of the semiconductor laser, and ensuring its long-term stable operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 is a structural block diagram of a semiconductor temperature control device in one embodiment;

[0018] Figure 2 The figure is a flow chart of a control method of a semiconductor temperature control device in one embodiment. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0020] In an exemplary embodiment, Figure 1 As shown, a semiconductor temperature control device is provided. The semiconductor temperature control device is integrated inside a semiconductor laser. The semiconductor temperature control device includes a temperature detection module 101 , a heat flow analysis module 102 and a closed-loop control module 103 .

[0021] Among them, semiconductor laser refers to a laser emitting device made based on semiconductor materials.

[0022] Among them, the semiconductor temperature control device refers to a control system used to adjust and stabilize the temperature of a semiconductor laser. It maintains the temperature of the semiconductor laser stable within a preset range by adjusting the working state of the thermoelectric cooling component to ensure the consistency of its output performance.

[0023] Thermoelectric cooling components refer to electronic devices that achieve temperature regulation based on the thermoelectric effect (Peltier effect), for example, bipolar semiconductor materials (bismuth telluride compounds, Bi 2 Te 3 ) and other thermoelectric materials.

[0024] The temperature detection module 101 is used to perform multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain multiple temperature measurement values, and perform finite element thermal field simulation calculation processing on the temperature distribution of the semiconductor laser according to the temperature measurement values ​​to obtain the temperature field distribution matrix of the semiconductor laser.

[0025] The temperature field distribution matrix represents the temperature distribution state of the semiconductor laser expressed in matrix form and calculated based on a plurality of temperature measurement values.

[0026] For example, first, multi-point thermocouple detection processing is performed on the temperature field of the semiconductor laser. Thermocouple sensors need to be arranged at multiple key positions of the semiconductor laser in advance to ensure that these measurement points can fully cover the area where the temperature gradient may change; secondly, the temperature data of different measurement points are collected by thermocouple sensors, and the collected data are recorded in time series, so as to be converted into temperature measurement values ​​that can intuitively represent the temperature change. Furthermore, a mathematical model is constructed based on the known material thermal conductivity, environmental heat dissipation conditions and structural boundary conditions, and the measured temperature measurement values ​​are input into the mathematical model for processing, that is, the temperature distribution inside the semiconductor laser is simulated by the finite element calculation method in the mathematical model, and the simulation calculation is constrained by the temperature measurement value to ensure that the calculation result is consistent with the actual physical state, so that the temperature field distribution matrix finally obtained can accurately reflect the temperature distribution state of each area inside the semiconductor laser.

[0027] The heat flow analysis module 102 is used to calculate the heat flux density of different areas of the semiconductor laser according to the temperature field distribution matrix to obtain the heat flux density distribution of the semiconductor laser, and to perform multi-channel pulse width modulation drive control processing on the thermoelectric cooling component in the semiconductor temperature control device according to the heat flux density distribution to obtain a temperature regulation drive signal acting on the thermoelectric cooling component.

[0028] The heat flux density distribution indicates the spatial distribution of the heat flux inside the semiconductor laser calculated according to the temperature field distribution matrix, and is used to analyze the heat transfer characteristics of various regions inside the semiconductor laser.

[0029] The temperature adjustment driving signal represents a control signal generated based on the heat flux density distribution condition, and is used to adjust the working state of the thermoelectric cooling component.

[0030] For example, first, the temperature gradient information of each region is obtained through the temperature field distribution matrix, and the temperature gradient information of each region is combined with the thermal conductivity of the material to solve the heat flux density distribution of each region using mathematical methods, wherein the heat flux density distribution reflects the heat transfer of each region, so that it is possible to further deduce which regions have a higher heat load and the corresponding adjustment requirements. Furthermore, based on the heat flux density distribution, the thermoelectric cooling component in the semiconductor temperature control device is driven and controlled. In order to achieve precise temperature control, it is necessary to use a multi-channel pulse width modulation method to drive and control each drive channel of the thermoelectric cooling component. The cooling effect of each drive channel corresponds to the heat flux density requirements of different regions, so that the thermoelectric cooling component can be independently adjusted according to the adjustment requirements of different regions. Finally, the generated temperature adjustment drive signal will be used as a control input to act on the thermoelectric cooling component, so that it can work according to the adjustment requirements of different regions.

[0031] The closed-loop control module 103 is used to perform adaptive adjustment processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the temperature adjustment driving signal, generate a temperature adjustment feedback signal, and perform closed-loop dynamic adjustment on the driving current acting on the thermoelectric cooling component according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within the target temperature range based on the adjusted driving current.

[0032] The temperature adjustment feedback signal refers to an adjustment feedback signal generated according to the temperature adjustment result of the thermoelectric cooling component, and is used to dynamically adjust the driving current of the thermoelectric cooling component.

[0033] Exemplarily, after the temperature adjustment driving signal acts on the thermoelectric cooling component, the actual working state of the thermoelectric cooling component is continuously monitored, and the temperature control effect of the temperature control system corresponding to the semiconductor temperature control device is feedback analyzed through the monitoring data, so that the thermoelectric cooling component is adaptively adjusted based on the PID (Proportional-Integral-Derivative) control algorithm in combination with the proportional-integral-derivative to generate a temperature adjustment feedback signal, and the temperature adjustment feedback signal is used to adjust the driving current acting on the thermoelectric cooling component so that the entire temperature control system forms a closed-loop control, that is, the deviation between the current temperature and the target temperature is continuously compared, and the output of the driving current is adjusted based on the deviation obtained by the comparison, so that the thermoelectric cooling component can continuously keep the temperature of the semiconductor laser within the target temperature range.

[0034] In this embodiment, first, the temperature field of the semiconductor laser is subjected to multi-point thermocouple detection processing to obtain temperature measurement values, and the temperature field distribution matrix is ​​obtained by combining the temperature measurement values ​​with finite element thermal field simulation calculation, so that the temperature distribution of the semiconductor laser can be accurately quantified, and reliable data support is provided for subsequent thermal management; secondly, the heat flux density distribution of the semiconductor laser is calculated according to the temperature field distribution matrix, and the thermoelectric cooling component in the semiconductor temperature control device is subjected to multi-channel pulse width modulation drive control processing according to the heat flux density distribution, and a temperature adjustment drive signal is generated, so that multi-channel pulse width modulation drive control of the thermoelectric cooling component is realized, that is, the heat load difference in different regions can be used to achieve refined temperature regulation; thirdly, the thermoelectric cooling component is subjected to adaptive adjustment processing combined with proportional integral differential, and a temperature adjustment feedback signal is generated to perform closed-loop dynamic adjustment on the drive current of the thermoelectric cooling component, so that the dynamic control function and balanced control function of the semiconductor device in the temperature control process can be ensured, and efficient and accurate temperature control of the semiconductor laser is realized, so as to ensure its long-term stable operation.

[0035] In an exemplary embodiment, in terms of performing multi-channel pulse width modulation drive control processing on a thermoelectric cooling component in a semiconductor temperature control device according to a heat flux density distribution condition to obtain a temperature adjustment drive signal acting on the thermoelectric cooling component, the heat flow analysis module 102 includes a signal analysis unit and a signal modulation unit.

[0036] The signal analysis unit is used to combine the preset dynamic heat load balancing algorithm and the heat flux density distribution status to perform pulse width modulation driving parameter calculation processing on each driving channel of the thermoelectric refrigeration component to obtain the pulse width modulation driving parameters corresponding to each driving channel, and perform duty cycle distribution calculation processing on each driving channel according to the pulse width modulation driving parameters corresponding to each driving channel to obtain a pulse width modulation duty cycle parameter matrix.

[0037] Among them, the dynamic thermal load balancing algorithm represents a control algorithm used to calculate and optimize the working state of the thermoelectric cooling component. Its core is to dynamically adjust the temperature control capabilities of each driving channel of the thermoelectric cooling component according to the heat flux density distribution in different areas inside the semiconductor laser, so that the overall temperature distribution of the semiconductor laser remains balanced.

[0038] The pulse width modulation driving parameter represents a key parameter of a pulse width modulation signal for controlling a thermoelectric cooling component, which determines the working intensity of each driving channel, for example, the occupancy ratio of the pulse width modulation signal.

[0039] Among them, the pulse width modulation duty cycle parameter matrix represents the occupancy ratio of the pulse width modulation signal of each driving channel stored and represented in the form of a matrix, so as to reflect the temperature control capabilities of different driving channels according to the values ​​of the matrix; the rows of the matrix represent different driving channels of the thermoelectric cooling component, and the columns represent different time steps, that is, the duty cycle values ​​of the pulse width modulation signal corresponding to different time points.

[0040] For example, since different regions of the semiconductor laser are subject to different degrees of heat accumulation and dissipation during operation, each driving channel of the thermoelectric cooling component needs to be independently regulated according to the actual heat load to ensure the balance and accuracy of the temperature control process, wherein the heat flux density of each region is calculated through a dynamic heat load balancing algorithm, and the appropriate pulse width modulation driving parameters are calculated in combination with the physical characteristics and load capacity of each driving channel. Furthermore, according to the pulse width modulation driving parameters corresponding to each driving channel, the duty cycle of each driving channel is distributed and calculated, wherein in the pulse width modulation control mode, the duty cycle directly determines the cooling intensity of the thermoelectric cooling component, so the duty cycle distribution calculation needs to be accurately matched according to the heat load situation, so that the temperature control capability of each driving channel is coordinated with the regulation requirements of each region; finally, the duty cycle allocated to each driving channel is integrated to obtain a pulse width modulation duty cycle parameter matrix, which can reflect both the temperature control capability of each driving channel and the regulation requirements corresponding to the heat load of different regions.

[0041] The signal modulation unit is used to perform pulse width modulation processing on the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a temperature adjustment driving signal acting on the thermoelectric cooling component.

[0042] For example, in the pulse width modulation control process, based on the calculated pulse width modulation duty cycle parameter matrix, the on-off cycle and cooling intensity of each drive channel are adjusted to obtain a temperature adjustment drive signal, thereby accurately controlling the working state of the thermoelectric cooling component, that is, the temperature adjustment drive signal will be independently set for each drive channel to ensure that the output power of different drive channels can accurately match the heat load adjustment requirements of the corresponding area. At the same time, in the process of generating the temperature adjustment drive signal, it is necessary to ensure the stability of the signal to avoid pulse interference or frequency fluctuations from adversely affecting the operation of the thermoelectric cooling component.

[0043] In this embodiment, firstly, the pulse width modulation driving parameters of each driving channel of the thermoelectric cooling component are calculated in combination with the dynamic heat load balancing algorithm and the heat flux density distribution, and a pulse width modulation duty cycle parameter matrix is ​​obtained based on the pulse width modulation driving parameter calculation, so that the temperature control capability of each driving channel can be accurately quantified; secondly, the thermoelectric cooling component is pulse width modulated according to the pulse width modulation duty cycle parameter matrix, and the temperature adjustment driving signal acting on the thermoelectric cooling component is efficiently obtained, thereby realizing independent temperature control of each driving channel to accurately adapt to the heat load adjustment requirements of different areas.

[0044] In an exemplary embodiment, in terms of performing pulse width modulation processing on the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a temperature adjustment drive signal acting on the thermoelectric cooling component, the signal modulation unit is also used to execute steps S101 to S103 (not shown).

[0045] Step S101 , performing synchronous phase correction processing on each driving channel of the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a pulse width modulation signal matrix after phase adjustment.

[0046] Among them, the pulse width modulation signal matrix represents the pulse width modulation signal characteristics of each driving channel of the thermoelectric cooling component stored and represented in a matrix form; the rows of the matrix represent different driving channels, and the columns represent different time steps, that is, the duty cycle, frequency and phase information of the pulse width modulation signal.

[0047] Exemplarily, in the pulse width modulation duty cycle parameter matrix, based on the duty cycle of each drive channel, the actual high and low level signal sequences corresponding to each drive channel are converted, and in the actual high and low level signal sequences corresponding to each drive channel, the initial phase of the pulse width modulation signal of each drive channel is determined, and then the initial phase of the pulse width modulation signal of each drive channel is subjected to synchronous phase correction processing, that is, adjustment is performed based on a unified time reference to reduce the phase deviation between different drive channels, so that all drive channels can output according to the optimized phase relationship when performing pulse width modulation, avoiding signal interference and unbalanced load distribution between different drive channels, and thus obtaining a pulse width modulation signal matrix after phase adjustment.

[0048] Step S102, performing harmonic component analysis processing on the pulse width modulation signal matrix to obtain a harmonic distribution matrix, and performing harmonic attenuation filtering processing on the pulse width modulation signal matrix according to the harmonic distribution matrix to obtain a target pulse width modulation signal matrix after harmonic optimization.

[0049] The harmonic distribution matrix represents the harmonic energy distribution in the pulse width modulation signal stored and represented in a matrix form; the rows of the matrix represent different drive channels, and the columns represent different harmonic orders, such as fundamental wave, second harmonic, third harmonic, etc.

[0050] Among them, the target pulse width modulation signal matrix represents the pulse width modulation signal matrix after harmonic optimization and filtering processing, in which the harmonic content of the pulse width modulation signal is significantly reduced, and the optimized signal is more stable and clean.

[0051] Exemplarily, first, the pulse width modulation signals of each driving channel in the pulse width modulation signal matrix are transformed in the frequency domain to extract the harmonic components in the pulse width modulation signals, and then the harmonic distribution matrix is ​​integrated according to the harmonic components in each pulse width modulation signal to characterize the harmonic energy distribution of different frequency components in the pulse width modulation signals of each driving channel; further, based on the harmonic distribution matrix, the pulse width modulation signals of each driving channel in the pulse width modulation signal matrix are subjected to harmonic attenuation filtering processing, and the target pulse width modulation signal matrix after harmonic optimization can maintain the required basic signal characteristics, while reducing unnecessary harmonic components and improving the purity of the signal.

[0052] Step S103, performing dynamic current limiting calculation processing on the driving current of the thermoelectric cooling component according to the target pulse width modulation signal matrix to obtain an initial driving current acting on the thermoelectric cooling component, and using the initial driving current as a temperature adjustment driving signal acting on the thermoelectric cooling component.

[0053] Exemplarily, the driving current of the thermoelectric cooling component is limited by combining the power carrying capacity and current stability requirements of each driving channel. That is, in the actual working process, the driving current of the thermoelectric cooling component needs to be controlled within a reasonable range to prevent component overload or increased power loss due to excessive current. The driving current range suitable for different adjustment requirements is calculated, and then based on the pulse width modulation signals of each driving channel in the target pulse width modulation signal matrix, the initial driving current within the driving current range is calculated, and the initial driving current is used as the temperature adjustment driving signal acting on the thermoelectric cooling component.

[0054] In this embodiment, firstly, a synchronous phase correction process is performed on each driving channel of the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a pulse width modulation signal matrix after phase adjustment, thereby ensuring that the phases of the pulse width modulation signals of each driving channel are consistent on the time axis, and avoiding the power fluctuation of the thermoelectric cooling component caused by the phase deviation between the driving channels; secondly, a harmonic component analysis is performed on the pulse width modulation signal matrix to obtain a harmonic distribution matrix, and then a harmonic attenuation filtering process is performed based on the harmonic distribution matrix to obtain a target pulse width modulation signal matrix after harmonic optimization, thereby reducing the high-order harmonic components in the pulse width modulation signal, reducing electromagnetic interference and power loss; thirdly, a limiting calculation is performed on the driving current of the thermoelectric cooling component according to the target pulse width modulation signal matrix to obtain an initial driving current acting on the thermoelectric cooling component, thereby ensuring that the driving current operates within a safe range and avoiding the influence of current overload on the thermoelectric cooling component.

[0055] In an exemplary embodiment, in terms of performing adaptive regulation processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the temperature regulation driving signal to generate a temperature regulation feedback signal, the closed-loop control module 103 includes a data acquisition unit, an error analysis unit, and a feedback generation unit.

[0056] The data acquisition unit is used to collect temperature adjustment data of the semiconductor laser response after the temperature adjustment driving signal acts on the thermoelectric cooling component.

[0057] The temperature adjustment data represents the temperature information of the semiconductor laser at continuous time points collected by the sensor after the temperature adjustment driving signal acts on the thermoelectric cooling component.

[0058] The error analysis unit is used to perform time series analysis on the temperature adjustment data to obtain the temperature adjustment trend of the semiconductor laser, and to perform error accumulation calculation on the target adjustment temperature of the thermoelectric cooling component and the current adjustment temperature according to the temperature adjustment trend to obtain the error correction amount.

[0059] The temperature regulation trend represents the temperature change direction and rate of the semiconductor laser calculated based on time series analysis, and is used to evaluate the current temperature regulation effect of the thermoelectric cooling component on the semiconductor laser.

[0060] The target adjustment temperature indicates the ideal temperature value of the semiconductor laser that is expected to be adjusted by the thermoelectric cooling component; the current adjustment temperature indicates the actual temperature value that is currently adjusted by the thermoelectric cooling component to the semiconductor laser.

[0061] The error correction amount represents the cumulative error between the target adjustment temperature and the current adjustment temperature, and is used to evaluate the degree of deviation of the temperature adjustment of the thermoelectric cooling component.

[0062] Exemplarily, first, in the time series analysis process, the temperature control data of the continuous time series is differentially calculated, that is, based on the temperature change amount at adjacent time points, the temperature change rate and change direction in the temperature control data are calculated, thereby determining the temperature control trend of the semiconductor laser in the corresponding time period; secondly, the target control temperature of the thermoelectric cooling component is determined, and based on the current control temperature at different time points in the temperature control trend, the instantaneous deviation between the target control temperature and the current control temperature at each time point is calculated, and the instantaneous deviations at different time points in the corresponding time period of the temperature control trend are accumulated and calculated to obtain the cumulative deviation, and the cumulative deviation is used as the error correction amount.

[0063] The feedback generation unit is used to perform adaptive adjustment processing on the thermoelectric cooling component in combination with proportional integral differential according to the error correction amount, obtain a dynamic adjustment amount in combination with proportional integral differential, and generate a temperature adjustment feedback signal based on the dynamic adjustment amount.

[0064] The dynamic adjustment amount represents a correction signal calculated based on the PID control algorithm, which is used as a basis for generating a temperature control feedback signal to adjust the driving current of the thermoelectric cooling component in real time. For example, when the error correction amount is large, the dynamic adjustment amount will increase accordingly to accelerate the temperature correction. Conversely, when the error is close to 0, the dynamic adjustment amount will decrease to prevent temperature overshoot.

[0065] Exemplarily, the calculated error correction amount is input into the PID control algorithm for data processing, that is, in the data processing process of the PID control algorithm, the proportional control part calculates the dynamic adjustment amount according to the current instantaneous value reflected in the error correction amount to enhance the instant adjustment capability of the semiconductor temperature control device; the integral control part calculates the dynamic adjustment amount according to the cumulative value reflected in the error correction amount to eliminate the steady-state error and make the temperature tend to the target value for a long time; the differential control part calculates the dynamic adjustment amount according to the error change rate reflected in the error correction amount to avoid overshoot and oscillation during the adjustment process. Based on this, the PID control algorithm combines the proportional control part, the integral control part, and the differential control part to calculate the adjustment amount respectively, and comprehensively outputs the dynamic adjustment amount combined with the proportional integral differential, so that the output dynamic adjustment amount combined with the proportional integral differential is used to generate a temperature adjustment feedback signal.

[0066] In this embodiment, first, after the temperature adjustment driving signal acts on the thermoelectric cooling component, the temperature adjustment data of the semiconductor laser response is collected, and the temperature adjustment data is subjected to time series analysis processing to obtain the temperature adjustment trend, and then the error accumulation calculation processing is performed on the target adjustment temperature and the current adjustment temperature according to the temperature adjustment trend to obtain the error correction amount, so as to accurately evaluate the deviation of the temperature adjustment of the thermoelectric cooling component in the time series dimension; secondly, the error correction amount is combined with the PID control algorithm to calculate the dynamic adjustment amount used to generate the temperature adjustment feedback signal, so as to achieve accurate, fast and stable temperature adjustment feedback, avoid temperature overshoot or lag, and improve the adaptability of the temperature control process.

[0067] In an exemplary embodiment, in terms of performing adaptive regulation processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the error correction amount to obtain a dynamic adjustment amount in combination with proportional-integral-differential, the feedback generation unit is also used to execute steps S201 to S203 (not shown).

[0068] Step S201, performing time series analysis on the error correction amount to obtain the historical correction trend of the thermoelectric cooling component, and obtaining the initial proportional integral differential control parameter of the determined gain coefficient based on the adaptive gain calculation processing of the historical correction trend.

[0069] Among them, the historical correction trend represents the error change law obtained after time series analysis of the error correction amount, that is, judging the error change trend over time.

[0070] Among them, the gain coefficient represents the multiplication factor used to adjust the output signal amplitude of the PID control algorithm, and is used to control the response degree of the semiconductor temperature control device to the error. For example, when the error is large, the gain coefficient is increased to make the semiconductor temperature control device respond faster, and when the error is small and stable, the gain coefficient is reduced to prevent oscillation.

[0071] The initial proportional-integral-derivative control parameters represent an initial PID parameter set obtained based on historical correction trends and adaptive gain calculations.

[0072] Exemplarily, the error correction amount is subjected to time series analysis to extract the historical correction trend of long-term error changes to reflect the dynamic temperature adjustment of the semiconductor temperature control device based on the error; furthermore, the direction, rate and acceleration of the error change are determined based on the historical correction trend. If the error change rate continues to increase, it may mean that the adjustment hysteresis of the semiconductor temperature control device is serious and the control response speed needs to be improved. If the acceleration is negative, it means that the error is converging rapidly and no excessive adjustment is required.

[0073] Furthermore, based on the direction, rate and acceleration of the error change reflected by the historical correction trend, the gain coefficient of the initial proportional integral differential control parameter is obtained. For example, if the error continues to grow, the gain coefficient of the proportional control part should be appropriately increased to enhance the instant response capability of the semiconductor temperature control device; if the error change rate is low but the cumulative error is large, the gain coefficient of the integral control part needs to be increased to eliminate the steady-state error; if the error acceleration is large, the gain coefficient of the differential control part needs to be increased to prevent temperature overshoot. Based on the above-mentioned optimized gain coefficients of each control part in the PID control algorithm, the initial proportional integral differential control parameter with a determined gain coefficient is obtained.

[0074] Step S202 , based on the dynamic response characteristics of the semiconductor temperature control device, a multi-dimensional optimization calculation process is performed on the initial proportional integral differential control parameters to obtain optimized target proportional integral differential control parameters.

[0075] Among them, the dynamic response characteristics represent the time response characteristics of the semiconductor temperature control device under different control inputs, such as response speed, adjustment time, overshoot, etc.

[0076] Among them, the target proportional integral derivative control parameter represents the final PID parameter set obtained based on the optimization calculation, which is used to provide more accurate control adjustment.

[0077] Exemplarily, a dynamic model based on the PID control algorithm can be constructed, and then combined with the dynamic response characteristics of the semiconductor temperature control device, the influence of different initial proportional integral differential control parameters on the temperature change can be calculated to obtain the optimized target proportional integral differential control parameters, that is, multiple groups of initial proportional integral differential control parameters are set, and each group of initial proportional integral differential control parameters is respectively input into the dynamic model based on the PID control algorithm, and the temperature change curve of the semiconductor temperature control device is obtained based on the dynamic response characteristics of the semiconductor temperature control device. From the temperature change curves corresponding to each group of initial proportional integral differential control parameters, comprehensive considerations are made based on dimensions such as accelerating the response speed as much as possible in the proportional control part, reducing the steady-state error as much as possible in the integral control part, and suppressing temperature oscillation as much as possible in the differential control part, so as to screen out the optimized target proportional integral differential control parameters from each group of initial proportional integral differential control parameters.

[0078] Step S203, combining the error correction amount and the target proportional-integral-differential control parameter, performing proportional-integral-differential adaptive adjustment processing on the thermoelectric cooling component to obtain a proportional-integral-differential dynamic adjustment amount.

[0079] Exemplarily, the target proportional-integral-differential control parameter is used as an algorithm parameter for adaptively adjusting the thermoelectric cooling component in combination with the proportional-integral-differential in the PID control algorithm, thereby combining the error correction amount with the target proportional-integral-differential control parameter to calculate a dynamic adjustment amount in combination with the proportional-integral-differential in the PID control algorithm.

[0080] Furthermore, in order to improve the adaptability of the PID control algorithm, the target proportional integral differential control parameters in the PID control algorithm can be dynamically optimized based on adaptive learning algorithms such as fuzzy control and neural network methods, so as to maintain the best control effect under different working conditions.

[0081] In this embodiment, first, based on the time series analysis of the error correction amount, the historical correction trend is extracted, and the gain coefficient of the initial proportional integral differential control parameter is calculated based on the historical correction trend, so that the initial proportional integral differential control parameter can dynamically adapt to different temperature control requirements; secondly, according to the dynamic response characteristics of the semiconductor temperature control equipment, the initial proportional integral differential control parameters are multi-dimensionally optimized and calculated, so as to ensure that the obtained target proportional integral differential control parameters can effectively match the actual dynamic operation characteristics of the semiconductor temperature control equipment; thirdly, in combination with the error correction amount and the target proportional integral differential control parameter, the thermoelectric cooling component is adaptively adjusted in combination with the proportional integral differential, so as to realize a precise adaptive adjustment control strategy in the temperature control process.

[0082] In an exemplary embodiment, in terms of performing closed-loop dynamic adjustment on the driving current acting on the thermoelectric cooling component according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within the target temperature range based on the adjusted driving current, the closed-loop control module 103 also includes a signal analysis unit and a current adjustment unit.

[0083] The signal analysis unit is used to perform signal decomposition processing on the temperature adjustment feedback signal to obtain the driving current adjustment amount of the thermoelectric refrigeration component, and perform dynamic change trend analysis processing on the driving current adjustment amount to obtain a timing adjustment value based on timing control.

[0084] Among them, the driving current adjustment amount represents the increase or decrease value of the driving current used to correct the thermoelectric cooling component obtained by analyzing the temperature control feedback signal; the timing adjustment value based on timing control represents the optimized adjustment value of the driving current calculated based on the dynamic change trend of the driving current adjustment amount in the time dimension, which is used to drive the rate and amplitude of the balanced current regulation.

[0085] Exemplarily, the temperature adjustment feedback signal is decomposed and processed to extract the component suitable for adjusting the driving current, so as to use the component as the driving current adjustment amount, that is, in the process of signal decomposition, a low-pass filtering method can be used to remove high-frequency noise and retain the main component to avoid the drastic change of the current from affecting the stability of the system. Furthermore, after the driving current adjustment amount is decomposed and obtained, the driving current adjustment amount is subjected to dynamic change trend analysis and processing to evaluate whether the current driving current adjustment amount meets the timing control requirements of the temperature control system, that is, by analyzing the time change rate of the driving current adjustment amount, its dynamic change trend is determined. For example, if the driving current adjustment amount continues to increase, it means that the temperature control system may need to further improve the heat dissipation capacity, and if the driving current adjustment amount shows a fluctuating change, it may mean that the temperature control system is over-adjusted and the control strategy needs to be optimized. Based on the above-mentioned timing control method, a timing adjustment value based on timing control is calculated, so that the adjustment of the driving current can adapt to the current working state of the temperature control system without causing an impact on the temperature control system, so as to improve the stability of the temperature control system.

[0086] The current adjustment unit is used to perform real-time dynamic calculation processing on the driving current of the thermoelectric cooling component according to the timing adjustment value to obtain the driving current after preliminary adjustment, and perform cyclic iterative optimization calculation processing on the driving current after preliminary adjustment to obtain the target driving current after closed-loop dynamic optimization, so that the thermoelectric cooling component maintains the temperature of the semiconductor laser within the target temperature range based on the target driving current.

[0087] For example, first, the driving current size applicable at the current moment is calculated according to the timing adjustment value as the driving current after preliminary adjustment, ensuring that the instant adjustment of the driving current matches the temperature regulation requirement of the temperature control system. Since the adjustment of the driving current cannot be too fast or too slow, the transient response characteristics of the thermoelectric cooling component need to be considered to prevent the excessive current adjustment amplitude from causing the temperature overshoot or lag of the system. Furthermore, after the driving current after preliminary adjustment is calculated, the driving current after preliminary adjustment is subjected to cyclic iterative optimization calculation processing. During this process, the driving current is continuously corrected according to real-time temperature feedback. For example, if the adjustment temperature corresponding to the driving current after preliminary adjustment is still not within the target temperature range, the adjustment amplitude of the driving current can be appropriately increased, or the adjustment rate of the driving current can be optimized to ensure that the temperature control system can respond quickly and maintain stable operation. Finally, the target driving current is obtained through closed-loop dynamic optimization, so that the thermoelectric cooling component can continuously maintain the temperature of the semiconductor laser within the set target temperature range based on the optimized target driving current.

[0088] In this embodiment, firstly, a driving current adjustment amount is obtained by performing signal decomposition processing on a temperature control feedback signal, and a trend analysis processing is performed on the dynamic change trend of the driving current adjustment amount to obtain a timing adjustment value based on timing control, thereby ensuring that the adjustment of the driving current is more precise and improving the adjustment stability of the temperature control system; secondly, the driving current of the thermoelectric cooling component is dynamically calculated in real time according to the timing adjustment value, and the target driving current after closed-loop dynamic optimization is obtained through cyclic iterative optimization, so that the driving current can be adaptively adjusted to avoid over-correction or adjustment lag, thereby improving the response speed and long-term stability of the temperature control system to temperature changes.

[0089] In an exemplary embodiment, in terms of performing cyclic iterative optimization calculation processing on the initially adjusted driving current to obtain the closed-loop dynamically optimized target driving current, the current adjustment unit is further configured to execute steps S301 to S303 (not shown).

[0090] Step S301, perform convergence evaluation calculation processing on the driving current after the preliminary adjustment to obtain the convergence parameter, and use the driving current corresponding to the convergence parameter that meets the preset convergence threshold condition as the first driving current. If the convergence parameter does not meet the convergence threshold condition, the driving current after the preliminary adjustment is cyclically dynamically compensated and calculated until the first driving current is obtained.

[0091] Among them, the convergence parameter represents the characteristic quantity used to evaluate the stability of the driving current, that is, it is used to determine whether the adjustment of the driving current tends to be stable, such as the rate of change of the driving current, the rate of change of the temperature error, the transient response time of the temperature control system and other parameters; the convergence threshold condition represents the preset range that the convergence parameter of the driving current that tends to be stable needs to meet.

[0092] Exemplarily, if the rate of change of the driving current is less than a preset threshold value within a specified number of consecutive time steps, it is considered that the convergence parameter of the driving current meets the convergence threshold condition, and the driving current is used as the first driving current. Furthermore, if the convergence parameter of the driving current does not meet the convergence threshold condition, the driving current cycle is dynamically compensated for calculation processing, that is, according to the deviation between the current convergence parameter of the driving current and the preset threshold of the convergence threshold condition, the change step size of the driving current is dynamically adjusted, and the calculation is continuously iterated so that it gradually converges to the optimal value until the convergence parameter of the driving current meets the convergence threshold condition.

[0093] Step S302, performing stability analysis and calculation processing on the first driving current to obtain a stability deviation parameter, and taking the first driving current corresponding to the stability deviation parameter that meets the preset stability threshold condition as the second driving current. If the stability deviation parameter does not meet the stability threshold condition, then performing step optimization calculation processing on the first driving current according to the convergence parameter until the second driving current is obtained.

[0094] The stability deviation parameter represents a characteristic quantity used to evaluate the short-term fluctuation degree of the first drive current, and is used to determine whether the first drive current can remain stable in a relatively short period of time, such as parameters such as the standard deviation and mean square error of the drive current.

[0095] The stability threshold condition represents a preset range that the stability deviation parameter of the first driving current that tends to be stable in a short period of time needs to satisfy.

[0096] Exemplarily, if the standard deviation of the first drive current is less than a preset threshold, it is considered that the stability deviation parameter of the first drive current meets the stability threshold condition, and the first drive current is used as the second drive current. Furthermore, if the stability deviation parameter of the first drive current does not meet the stability threshold condition, the first drive current is subjected to step optimization calculation processing according to the convergence parameter of the first drive current, and even if the first drive current can maintain convergence, the step size is adjusted by gradient descent or adaptive adjustment algorithm, so that the adjustment step size of the first drive current avoids unnecessary oscillation caused by over-adjustment while meeting the stability requirements, until the stability deviation parameter of the first drive current meets the stability threshold condition.

[0097] Step S303, acquiring historical driving data, comparing and calculating the second driving current with the historical driving data to obtain a driving adjustment factor, optimizing and calculating the second driving current according to the driving adjustment factor, and obtaining a target driving current after closed-loop dynamic optimization.

[0098] Among them, the historical driving data represents the adjustment data of the driving current recorded by the temperature control system during past operation; the driving adjustment factor represents the adjustment weight calculated based on the comparison between the historical driving data and the second driving current, which is used to quantify the optimization space of the current driving current.

[0099] Exemplarily, the second drive current is compared and calculated with historical drive data to analyze the impact of historical operating experience on the current drive adjustment. If the historical drive data indicates that there is a large deviation between the historical drive current and the current second drive current under similar temperature conditions, it means that the current second drive current may need to be corrected. The drive adjustment factor corresponding to the second drive current is calculated based on the deviation between the historical drive current and the second drive current. Furthermore, based on the calculated drive adjustment factor, the second drive current is optimized to obtain the target drive current after closed-loop dynamic optimization to balance the impact of the current drive adjustment and the historical drive data.

[0100] In this embodiment, first, a convergence evaluation calculation is performed on the driving current after the preliminary adjustment, and the driving current is adjusted through dynamic compensation calculation, so as to ensure that the obtained first driving current can tend to be stable and improve the convergence of the adjustment process; secondly, a stability analysis calculation is performed on the first driving current, and a step size optimization calculation is performed in combination with the convergence parameter, so as to ensure that the obtained second driving current does not produce drastic fluctuations during the adjustment process; thirdly, the second driving current is compared and calculated with the historical driving data to obtain the driving adjustment factor, and the second driving current is optimized based on the driving adjustment factor, so as to optimize the driving current using the historical adjustment experience, improve the adjustment efficiency, and improve the scene adaptability of the temperature control.

[0101] Each module in the above-mentioned semiconductor temperature control device can be implemented in whole or in part by software, hardware and a combination thereof. Each of the above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so that the processor can call and execute the corresponding operations of each of the above modules.

[0102] Based on the same inventive concept, the embodiment of the present application also provides a control method for a semiconductor temperature control device implemented according to the semiconductor temperature control device involved above. The implementation scheme for solving the problem provided by the method is similar to the implementation scheme recorded in the above-mentioned device, so the specific limitations in the control method embodiments of one or more semiconductor temperature control devices provided below can refer to the limitations on semiconductor temperature control devices above, and will not be repeated here.

[0103] In an exemplary embodiment, Figure 2 As shown, a control method for a semiconductor temperature control device is provided. This embodiment uses the method applied to the semiconductor temperature control device mentioned above as an example for illustration; the method includes the following steps S401 to S403.

[0104] Step S401, performing multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain multiple temperature measurement values, and performing finite element thermal field simulation calculation processing on the temperature distribution of the semiconductor laser according to the temperature measurement values ​​to obtain the temperature field distribution matrix of the semiconductor laser;

[0105] Step S402, performing heat flux calculation processing on different regions of the semiconductor laser according to the temperature field distribution matrix to obtain the heat flux distribution of the semiconductor laser, and performing multi-channel pulse width modulation drive control processing on the thermoelectric cooling component in the semiconductor temperature control device according to the heat flux distribution to obtain a temperature adjustment drive signal acting on the thermoelectric cooling component;

[0106] Step S403, adaptively adjust the thermoelectric cooling component in combination with proportional-integral-differential according to the temperature adjustment driving signal to generate a temperature adjustment feedback signal, and perform closed-loop dynamic adjustment on the driving current acting on the thermoelectric cooling component according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within the target temperature range based on the adjusted driving current.

[0107] In an exemplary embodiment, a multi-channel pulse width modulation drive control process is performed on a thermoelectric cooling component in a semiconductor temperature control device according to a heat flux density distribution condition to obtain a temperature adjustment drive signal acting on the thermoelectric cooling component, including:

[0108] Combined with the preset dynamic heat load balancing algorithm and the heat flux density distribution, the pulse width modulation driving parameter calculation processing is performed on each driving channel of the thermoelectric cooling component to obtain the pulse width modulation driving parameters corresponding to each driving channel, and the duty cycle distribution calculation processing is performed on each driving channel according to the pulse width modulation driving parameters corresponding to each driving channel to obtain the pulse width modulation duty cycle parameter matrix;

[0109] The thermoelectric cooling component is pulse-width modulated according to the pulse-width modulation duty cycle parameter matrix to obtain a temperature adjustment driving signal acting on the thermoelectric cooling component.

[0110] In an exemplary embodiment, pulse width modulation is performed on the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a temperature adjustment driving signal acting on the thermoelectric cooling component, including:

[0111] Performing synchronous phase correction processing on each driving channel of the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a pulse width modulation signal matrix after phase adjustment;

[0112] Performing harmonic component analysis on the pulse width modulation signal matrix to obtain a harmonic distribution matrix, performing harmonic attenuation filtering on the pulse width modulation signal matrix according to the harmonic distribution matrix to obtain a target pulse width modulation signal matrix after harmonic optimization;

[0113] The driving current of the thermoelectric cooling component is dynamically limited and calculated according to the target pulse width modulation signal matrix to obtain the initial driving current acting on the thermoelectric cooling component, and the initial driving current is used as the temperature adjustment driving signal acting on the thermoelectric cooling component.

[0114] In an exemplary embodiment, the thermoelectric cooling component is adaptively adjusted in combination with proportional-integral-differential according to the temperature adjustment driving signal to generate a temperature adjustment feedback signal, including:

[0115] After the temperature adjustment driving signal acts on the thermoelectric cooling component, collecting temperature adjustment data of the semiconductor laser response;

[0116] Performing time series analysis and processing on the temperature adjustment data to obtain the temperature adjustment trend of the semiconductor laser, and performing error accumulation calculation processing on the target adjustment temperature of the thermoelectric cooling component and the current adjustment temperature according to the temperature adjustment trend to obtain the error correction amount;

[0117] According to the error correction amount, the thermoelectric refrigeration component is adaptively adjusted in combination with proportional-integral-differential to obtain a dynamic adjustment amount in combination with proportional-integral-differential, and a temperature adjustment feedback signal is generated based on the dynamic adjustment amount.

[0118] In an exemplary embodiment, the thermoelectric cooling component is adaptively adjusted in combination with proportional-integral-differential according to the error correction amount to obtain a dynamic adjustment amount in combination with proportional-integral-differential, including:

[0119] Performing time series analysis on the error correction amount to obtain the historical correction trend of the thermoelectric refrigeration component, and obtaining the initial proportional integral differential control parameter of the determined gain coefficient based on the adaptive gain calculation of the historical correction trend;

[0120] Based on the dynamic response characteristics of the semiconductor temperature control equipment, the initial proportional integral differential control parameters are multi-dimensionally optimized and calculated to obtain the optimized target proportional integral differential control parameters;

[0121] Combining the error correction amount with the target proportional-integral-differential control parameter, the thermoelectric refrigeration component is subjected to a proportional-integral-differential adaptive adjustment process to obtain a proportional-integral-differential dynamic adjustment amount.

[0122] In an exemplary embodiment, a closed-loop dynamic adjustment of a driving current acting on a thermoelectric cooling component is performed according to a temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within a target temperature range based on the adjusted driving current, including:

[0123] Performing signal decomposition processing on the temperature adjustment feedback signal to obtain the drive current adjustment amount of the thermoelectric cooling component, and performing dynamic change trend analysis processing on the drive current adjustment amount to obtain a timing adjustment value based on timing control;

[0124] The driving current of the thermoelectric cooling component is dynamically calculated in real time according to the timing adjustment value to obtain the driving current after preliminary adjustment, and the driving current after preliminary adjustment is optimized and calculated in a loop to obtain the target driving current after closed-loop dynamic optimization, so that the thermoelectric cooling component maintains the temperature of the semiconductor laser within the target temperature range based on the target driving current.

[0125] In an exemplary embodiment, the initially adjusted driving current is subjected to cyclic iterative optimization calculation processing to obtain a closed-loop dynamically optimized target driving current, including:

[0126] Performing convergence evaluation calculation processing on the initially adjusted driving current to obtain a convergence parameter, taking the driving current corresponding to the convergence parameter that meets the preset convergence threshold condition as the first driving current, and if the convergence parameter does not meet the convergence threshold condition, cyclically performing dynamic compensation calculation processing on the initially adjusted driving current until the first driving current is obtained;

[0127] Performing stability analysis and calculation processing on the first driving current to obtain a stability deviation parameter, using the first driving current corresponding to the stability deviation parameter that meets a preset stability threshold condition as the second driving current, and if the stability deviation parameter does not meet the stability threshold condition, performing step size optimization calculation processing on the first driving current according to the convergence parameter until the second driving current is obtained;

[0128] The historical driving data is obtained, and the second driving current is compared and calculated with the historical driving data to obtain a driving adjustment factor. The second driving current is optimized and calculated according to the driving adjustment factor to obtain a target driving current after closed-loop dynamic optimization.

[0129] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0130] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in any of the above embodiments when executing the computer program.

[0131] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in any of the above embodiments are implemented.

[0132] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0133] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0134] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the present application. It should be noted that, for a person of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A semiconductor temperature control device, characterized in that: The semiconductor temperature control device is integrated inside the semiconductor laser, and the semiconductor temperature control device includes: A temperature detection module, used to perform multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain a plurality of temperature measurement values, and perform finite element thermal field simulation calculation processing on the temperature distribution of the semiconductor laser according to the temperature measurement values ​​to obtain a temperature field distribution matrix of the semiconductor laser; A heat flow analysis module, used to perform heat flow density calculation processing on different areas of the semiconductor laser according to the temperature field distribution matrix to obtain the heat flow density distribution of the semiconductor laser, and to perform multi-channel pulse width modulation drive control processing on the thermoelectric refrigeration component in the semiconductor temperature control device according to the heat flow density distribution to obtain a temperature adjustment drive signal acting on the thermoelectric refrigeration component; The closed-loop control module is used to perform adaptive adjustment processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the temperature adjustment driving signal, generate a temperature adjustment feedback signal, and perform closed-loop dynamic adjustment on the driving current acting on the thermoelectric cooling component according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within a target temperature range based on the adjusted driving current.

2. The semiconductor temperature control device according to claim 1, characterized in that: In the aspect of performing multi-channel pulse width modulation drive control processing on the thermoelectric refrigeration component in the semiconductor temperature control device according to the heat flux density distribution condition to obtain a temperature adjustment drive signal acting on the thermoelectric refrigeration component, the heat flux analysis module includes: A signal analysis unit, configured to perform pulse width modulation drive parameter calculation processing on each drive channel of the thermoelectric refrigeration component in combination with a preset dynamic heat load balancing algorithm and the heat flux density distribution condition, to obtain pulse width modulation drive parameters corresponding to each drive channel, and to perform duty cycle distribution calculation processing on each drive channel according to the pulse width modulation drive parameters corresponding to each drive channel, to obtain a pulse width modulation duty cycle parameter matrix; The signal modulation unit is used to perform pulse width modulation processing on the thermoelectric refrigeration component according to the pulse width modulation duty cycle parameter matrix to obtain a temperature adjustment driving signal acting on the thermoelectric refrigeration component.

3. The semiconductor temperature control device according to claim 2, characterized in that: In the aspect of performing pulse width modulation processing on the thermoelectric refrigeration component according to the pulse width modulation duty cycle parameter matrix to obtain a temperature adjustment driving signal acting on the thermoelectric refrigeration component, the signal modulation unit is further used for: Performing synchronous phase correction processing on each driving channel of the thermoelectric cooling component according to the pulse width modulation duty cycle parameter matrix to obtain a pulse width modulation signal matrix after phase adjustment; Performing harmonic component analysis processing on the pulse width modulation signal matrix to obtain a harmonic distribution matrix, and performing harmonic attenuation filtering processing on the pulse width modulation signal matrix according to the harmonic distribution matrix to obtain a target pulse width modulation signal matrix after harmonic optimization; The driving current of the thermoelectric cooling component is dynamically limited by calculating and processing the target pulse width modulation signal matrix to obtain an initial driving current acting on the thermoelectric cooling component, and the initial driving current is used as a temperature adjustment driving signal acting on the thermoelectric cooling component.

4. The semiconductor temperature control device according to claim 1, characterized in that: In the aspect of performing adaptive regulation processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the temperature regulation driving signal to generate a temperature regulation feedback signal, the closed-loop control module includes: A data acquisition unit, used for acquiring temperature adjustment data of the semiconductor laser response after the temperature adjustment driving signal acts on the thermoelectric cooling component; an error analysis unit, configured to perform time series analysis processing on the temperature adjustment data to obtain a temperature adjustment trend of the semiconductor laser, and perform error accumulation calculation processing on a target adjustment temperature of the thermoelectric cooling component and a current adjustment temperature according to the temperature adjustment trend to obtain an error correction amount; The feedback generation unit is used to perform adaptive adjustment processing on the thermoelectric cooling component in combination with proportional-integral-differential according to the error correction amount, obtain a dynamic adjustment amount in combination with proportional-integral-differential, and generate a temperature adjustment feedback signal based on the dynamic adjustment amount.

5. The semiconductor temperature control device according to claim 4, characterized in that: In the aspect of performing adaptive adjustment processing combining proportional-integral-differential on the thermoelectric cooling component according to the error correction amount to obtain a dynamic adjustment amount combining proportional-integral-differential, the feedback generation unit is further used to: Performing time series analysis on the error correction amount to obtain a historical correction trend of the thermoelectric refrigeration component, and obtaining an initial proportional integral differential control parameter with a determined gain coefficient based on an adaptive gain calculation process on the historical correction trend; Based on the dynamic response characteristics of the semiconductor temperature control device, the initial proportional-integral-differential control parameters are subjected to multi-dimensional optimization calculation processing to obtain optimized target proportional-integral-differential control parameters; Combining the error correction amount with the target proportional-integral-differential control parameter, the thermoelectric cooling component is subjected to a proportional-integral-differential adaptive adjustment process to obtain a proportional-integral-differential dynamic adjustment amount.

6. The semiconductor temperature control device according to claim 1, characterized in that: In terms of performing closed-loop dynamic adjustment on the driving current acting on the thermoelectric cooling component according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within a target temperature range based on the adjusted driving current, the closed-loop control module includes: A signal analysis unit, used to perform signal decomposition processing on the temperature adjustment feedback signal to obtain a driving current adjustment amount of the thermoelectric refrigeration component, and perform dynamic change trend analysis processing on the driving current adjustment amount to obtain a timing adjustment value based on timing control; The current adjustment unit is used to perform real-time dynamic calculation processing on the driving current of the thermoelectric cooling component according to the timing adjustment value to obtain the driving current after preliminary adjustment, and perform cyclic iterative optimization calculation processing on the driving current after preliminary adjustment to obtain the target driving current after closed-loop dynamic optimization, so that the thermoelectric cooling component maintains the temperature of the semiconductor laser within the target temperature range based on the target driving current.

7. The semiconductor temperature control device according to claim 6, characterized in that: In the aspect of performing cyclic iterative optimization calculation processing on the preliminarily adjusted driving current to obtain a closed-loop dynamically optimized target driving current, the current adjustment unit is further used for: Performing convergence evaluation calculation processing on the initially adjusted driving current to obtain a convergence parameter, taking the driving current corresponding to the convergence parameter that satisfies a preset convergence threshold condition as the first driving current, and if the convergence parameter does not satisfy the convergence threshold condition, cyclically performing dynamic compensation calculation processing on the initially adjusted driving current until the first driving current is obtained; Performing stability analysis and calculation processing on the first driving current to obtain a stability deviation parameter, using the first driving current corresponding to the stability deviation parameter that satisfies a preset stability threshold condition as the second driving current, and if the stability deviation parameter does not satisfy the stability threshold condition, performing step size optimization calculation processing on the first driving current according to the convergence parameter until the second driving current is obtained; Historical driving data is acquired, and the second driving current is compared and calculated with the historical driving data to obtain a driving adjustment factor, and the second driving current is optimized and calculated according to the driving adjustment factor to obtain a target driving current after closed-loop dynamic optimization.

8. A control method for a semiconductor temperature control device, characterized in that: A semiconductor temperature control device applied to any one of claims 1 to 7, wherein the semiconductor temperature control device is integrated inside a semiconductor laser, and the method comprises: Performing multi-point thermocouple detection processing on the temperature field of the semiconductor laser to obtain a plurality of temperature measurement values, and performing finite element thermal field simulation calculation processing on the temperature distribution of the semiconductor laser according to the temperature measurement values ​​to obtain a temperature field distribution matrix of the semiconductor laser; Performing heat flux calculation processing on different regions of the semiconductor laser according to the temperature field distribution matrix to obtain the heat flux distribution of the semiconductor laser, and performing multi-channel pulse width modulation drive control processing on the thermoelectric refrigeration component in the semiconductor temperature control device according to the heat flux distribution to obtain a temperature adjustment drive signal acting on the thermoelectric refrigeration component; The thermoelectric cooling component is adaptively adjusted in combination with proportional-integral-differential according to the temperature adjustment driving signal to generate a temperature adjustment feedback signal, and the driving current acting on the thermoelectric cooling component is dynamically adjusted in a closed loop according to the temperature adjustment feedback signal until the thermoelectric cooling component maintains the temperature of the semiconductor laser within a target temperature range based on the adjusted driving current.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to claim 8 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to claim 8 are implemented.

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