Method for forming a multiple mask pattern and semiconductor device

Abstract

The present invention discloses a method for forming a multiple mask pattern, which includes analyzing the layout of the multiple mask pattern to determine hot spot patterns in the layout of the multiple mask pattern that do not meet the layout design requirements of the mask pattern layout; then adjusting the hot spot patterns so that the adjusted layout of the multiple mask pattern meets the adjusted layout design requirements. Compared with the operation method in the prior art of returning the layout to the design manufacturer for re-layout design after finding hot spot patterns that do not meet the layout design requirements of the multiple mask pattern layout during the processing, this method first finds the conflicts, then locally processes the conflicting hot spot patterns to resolve the conflicts, and then uses the finally determined layout of the multiple mask pattern for processing, effectively reducing the intermediate links and turnover time and improving work efficiency. The present invention also discloses a semiconductor device with better performance formed by this method.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a method for forming a multiple mask pattern and a semiconductor device. Background Art

[0002] Currently, integrated circuit manufacturers generally manufacture corresponding integrated circuit products according to the layout files provided by design companies. The layout files are usually provided to integrated circuit manufacturers by design companies in a specific file format (such as Graphic Data Stream file, GDS). Integrated circuit manufacturers extract relevant layout data from the layout files, form a mask pattern layout structure, and manufacture masks.

[0003] As the process nodes of semiconductor devices on integrated circuits have developed to a size below 10 nm, for these masks with smaller sizes, the density of mask patterns is very large, even smaller than the limit of the mask pattern density that the lithography process can handle. In the case where deep ultraviolet lithography (DUV) technology cannot handle it, self-aligned multiple patterning is usually selected to split a single mask pattern into two, three or more mask patterns, and then lithography is performed. This can make the distance between mask patterns greater than the limit that the lithography process can handle, so as to form a wafer pattern identical to the preset design expectation.

[0004] However, for some designs, due to process limitations or very low mask pattern density, they do not meet the standards for self-aligned multiple patterning, so self-aligned multiple patterning cannot be performed. In this way, a mask cannot be divided into multiple masks. And when self-aligned multiple patterning cannot be performed, the operator needs to return the layout to the design company to re-design the layout. This prolongs the manufacturing time of the mask and increases the labor cost.

[0005] Therefore, a method for forming a multiple mask pattern needs to be proposed to solve the problems existing in the prior art. Summary of the Invention

[0006] The purpose of the present invention is to solve the problems in the prior art that the process of forming a multiple mask pattern is complex and time-consuming. The present invention provides a method for forming a multiple mask pattern and a semiconductor device prepared by this method, which can accelerate the speed of forming a multiple mask pattern and reduce the turnover time for forming the mask pattern.

[0007] To solve the above technical problems, an embodiment of the present invention discloses a method for forming a multi-mask pattern, including: analyzing the layout of the multi-mask pattern to determine hot-spot patterns in the layout of the multi-mask pattern that do not meet the layout design requirements of the multi-mask pattern layout; adjusting the hot-spot patterns so that the adjusted layout of the multi-mask pattern meets the layout design requirements.

[0008] Adopting the above technical solution, by determining the hot-spot patterns in the multi-mask pattern that do not meet the layout design requirements of the mask pattern layout, and then adjusting the hot-spot patterns. Compared with the operation method in the prior art of returning the layout to the design manufacturer for re-layout design after finding hot-spot patterns that do not meet the layout design requirements of the multi-mask pattern layout during the processing, this method first finds the conflicts, then locally processes the conflicting hot-spot patterns to resolve the conflicts, and then uses the finally determined layout of the multi-mask pattern for processing, effectively reducing the intermediate links and turnover time and improving work efficiency.

[0009] According to another specific embodiment of the present invention, a method for forming a multi-mask pattern disclosed in the embodiment of the present invention, the layout design requirements include: the distance between adjacent patterns on each mask pattern layer is greater than or equal to the design spacing threshold of the multi-mask pattern.

[0010] According to another specific embodiment of the present invention, a method for forming a multi-mask pattern disclosed in the embodiment of the present invention, analyzing the layout of the multi-mask pattern to determine hot-spot patterns in the layout of the multi-mask pattern that do not meet the layout design requirements of the multi-mask pattern layout, including: obtaining the distance between adjacent patterns on each mask pattern layer and determining whether the distance is less than the design spacing threshold; if so, determining the adjacent patterns as hot-spot patterns.

[0011] According to another specific embodiment of the present invention, a method for forming a multi-mask pattern disclosed in the embodiment of the present invention, adjusting the hot-spot patterns so that the adjusted layout of the multi-mask pattern meets the layout design requirements, including: determining a conflict area according to the hot-spot patterns and establishing a buffer area on the periphery of the conflict area; using the pattern layout of the buffer area as a reference, at least re-layout the hot-spot patterns in the conflict area according to the layout design requirements so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the design spacing threshold;

[0012] Or determining a conflict area according to the hot-spot patterns, establishing a buffer area on the periphery of the conflict area, and determining the area outside the buffer area as the external area;

[0013] With reference to the pattern layout of the buffer area and the pattern layout of the external area, at least the hot spot patterns in the buffer area are re-layout designed according to the layout design requirements, so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the design spacing threshold.

[0014] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed in the embodiment of the present invention determines a conflict area according to a hot spot pattern, including: determining the hot spot pattern and its surrounding area as the conflict area.

[0015] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed in the embodiment of the present invention establishes a buffer area on the periphery of the conflict area, including: determining the area surrounding the conflict area as the buffer area.

[0016] According to another specific embodiment of the present invention, the area of the external area is greater than the area of the buffer area in the method for forming a multiple mask pattern disclosed in the embodiment of the present invention.

[0017] According to another specific embodiment of the present invention, the layout design requirements in the method for forming a multiple mask pattern disclosed in the embodiment of the present invention include initial layout design requirements and adjusted layout design requirements;

[0018] The initial layout design requirements include: the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold of the multiple mask pattern; the adjusted layout design requirements include: in the conflict area, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the adjusted spacing threshold, and the adjusted spacing threshold is less than or equal to the initial spacing threshold; outside the conflict area, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold.

[0019] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed in the embodiment of the present invention includes analyzing the layout of the multiple mask pattern to determine the hot spot patterns that do not meet the initial layout design requirements in the layout of the multiple mask pattern; adjusting the hot spot patterns so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the adjusted spacing threshold, and the distance between adjacent patterns on each mask pattern layer outside the conflict area is greater than or equal to the initial design spacing threshold.

[0020] The embodiment of the present invention also discloses a semiconductor device, and the semiconductor device includes a multiple mask pattern, and the multiple mask pattern is formed by the method for forming a multiple mask pattern described above.

[0021] For the semiconductor device formed by the above solution, by determining the hot spot patterns in the multiple mask patterns that do not meet the layout design requirements of the mask pattern layout, and then adjusting the hot spot patterns. Compared with the operation method in the prior art of returning the layout to the design manufacturer for re-layout design after finding hot spot patterns that do not meet the layout design requirements of the multiple mask patterns during the processing, this method first finds the conflicts, then locally processes the conflicting hot spot patterns to resolve the conflicts, and then uses the finally determined multiple mask pattern layout for processing, effectively reducing the intermediate links and turnaround time, and improving work efficiency. Brief Description of the Drawings

[0022] Figure 1 is a flowchart of the method for forming a multiple mask pattern provided by an embodiment of the present invention;

[0023] Figure 2 is a schematic diagram of the layout of the multiple mask pattern provided by an embodiment of the present invention;

[0024] Figure 3 is Figure 2 a partial enlarged view of the conflict area in the layout of the multiple mask pattern shown;

[0025] Figure 4 is a schematic diagram of the adjusted layout of the multiple mask pattern provided by an embodiment of the present invention;

[0026] Figure 5 is a schematic diagram of the conflict area, buffer area, and external area in the layout of the multiple mask pattern provided by an embodiment of the present invention;

[0027] Figure 6 is a method flow judgment diagram of another layout of the multiple mask pattern provided by an embodiment of the present invention.

[0028] Reference Numerals:

[0029] 1. Mask pattern layout; 2. Hot spot pattern; 3. Conflict area; 4. Buffer area; 5. External area. Detailed Description of the Embodiment

[0030] The following specific embodiments illustrate the implementation manners of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may extend based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description. It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other.

[0031] It should be noted that in this specification, similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0032] In the description of this embodiment, it should be noted that the orientation or positional relationship indicated by terms such as "upper", "lower", "inner", "bottom", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the inventive product is usually placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention.

[0033] Terms such as "first" and "second" are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0034] In the description of this embodiment, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in this embodiment can be understood according to specific situations.

[0035] To make the purpose, technical solution, and advantages of the present invention clearer, the implementation manners of the present invention will be further described in detail below with reference to the drawings.

[0036] Embodiment 1:

[0037] To solve the problem in the prior art that the process of forming a multiple mask pattern is complex and time-consuming. The present invention provides a method for forming a multiple mask pattern. Specifically, asFigure 1 As shown in Figure 1 , the method for forming a multi-mask pattern provided in this embodiment includes:

[0038] Step S1: Analyze the layout of the multi-mask pattern to determine the hot spot patterns in the layout of the multi-mask pattern that do not meet the layout design requirements of the mask pattern layout.

[0039] Specifically, the layout of the multi-mask pattern refers to the distribution information of the mask patterns used to form self-aligned multi-patterns. Forming self-aligned multi-patterns may refer to forming self-aligned multi-patterns through a self-aligned multi-pattern formation method, that is, splitting the original mask into multiple masks. Specifically, it may be forming self-aligned double patterns through a self-aligned double pattern formation method, or forming self-aligned triple patterns through a self-aligned triple pattern formation method. Analyzing the mask pattern layout specifically may include analyzing the distance between adjacent patterns in each layer of the mask pattern. And the hot spot patterns are the adjacent patterns in each layer of the existing mask patterns that do not meet the layout design requirements.

[0040] It should be noted that the layout design requirement means that the distance between adjacent patterns on each layer of the mask pattern layer is greater than or equal to the design spacing threshold of the multi-mask pattern, that is, the distance between adjacent patterns on each layer of the mask pattern layer can meet the spacing requirements between the patterns for forming self-aligned multi-patterns. The design spacing threshold is the minimum value of the distance between adjacent patterns on each mask layer that can form self-aligned multi-patterns. That is to say, when the threshold between adjacent patterns is greater than or equal to the design spacing threshold, each mask layer can form self-aligned multi-patterns.

[0041] Step S2: Adjust the hot spot patterns so that the adjusted layout of the multi-mask pattern meets the layout design requirements. That is, adjust the hot spot patterns. Through the adjustment, the spacing between the hot spot patterns is increased, so that the layout of the mask patterns is the same as or approximate to the distribution of the mask patterns required by the layout design requirements, so that the subsequent formation of self-aligned multi-patterns can be carried out.

[0042] Furthermore, analyzing the layout of the multi-mask pattern to determine the hot spot patterns in the layout of the multi-mask pattern that do not meet the layout design requirements of the mask pattern layout includes: obtaining the distance between adjacent patterns on each layer of the mask pattern layer and judging whether the distance is less than the design spacing threshold; if so, determining that the adjacent patterns are hot spot patterns. That is to say, if the distance between adjacent patterns on each layer of the mask pattern is less than the design spacing threshold in the layout design requirements, then the adjacent patterns are hot spot patterns.

[0043] Further, adjust the hot spot pattern so that the layout of the adjusted multi-mask pattern meets the layout design requirements, including: determining a conflict area according to the hot spot pattern, and establishing a buffer area on the periphery of the conflict area; taking the pattern layout of the buffer area as a reference, and at least re-layout the hot spot pattern in the buffer area according to the layout design requirements.

[0044] That is to say, in order to increase the accuracy of the adjustment, it is necessary to determine the conflict area according to the hot spot pattern. Specifically, the conflict area completely covers the hot spot pattern. The shape of the conflict area can be rectangular, circular or oval, and this embodiment does not make specific limitations on this. Moreover, the hot spot pattern can be in the middle of the conflict area or at the edge of the conflict area.

[0045] It should be understood that the purpose of re-layouting the hot spot pattern is to make the distance between the patterns on each mask pattern layer in the conflict area greater than or equal to the design spacing threshold. That is, in order to make the adjusted hot spot pattern meet the requirement that the mask pattern can be divided into multi-mask patterns.

[0046] Another method provided in this embodiment for adjusting the hot spot pattern so that the layout of the adjusted multi-mask pattern meets the layout design requirements includes: determining a conflict area according to the hot spot pattern, establishing a buffer area on the periphery of the conflict area, and determining the area outside the buffer area as the external area; taking the pattern layout of the buffer area and the pattern layout of the external area as references, and at least re-layout the hot spot pattern in the buffer area according to the layout design requirements.

[0047] That is, in this embodiment, an external area can be established outside the buffer area, and the conflict area can be re-layouted according to the pattern layouts in the buffer area and the external area, which can effectively avoid the situation where when re-layouting the conflict area according to one of the buffer area and the external area cannot meet the purpose of re-layouting, the conflict area can still be re-layouted according to the other one.

[0048] Further, in this embodiment, the area outside the buffer area can also be determined as the external area. When re-layouting the conflict area, the layout designs of the external area and the buffer area remain unchanged, which can effectively reduce the adjustment time and improve work efficiency.

[0049] Further, determining the conflict area according to the hot spot pattern includes: determining the hot spot pattern and its surrounding area as the conflict area.

[0050] Further, establishing a buffer area on the periphery of the conflict area includes: determining a part of the area surrounding the conflict area as the buffer area. It should be understood that the area outside the buffer area is determined as the external area.

[0051] Furthermore, the area of the outer region is larger than that of the buffer region. Also, the buffer region can be in the middle of the outer region or at the edge of the outer region; the conflict region can be in the middle of the buffer region or at the edge of the buffer region.

[0052] That is to say, the outer region surrounds the buffer region, the buffer region surrounds the conflict region, and the conflict region is the area where the hot spot pattern is located. Specifically, the buffer region completely covers the conflict region. The shapes of the buffer region and the outer region can be rectangular, circular or elliptical, and the present embodiment does not make specific limitations in this regard. The size of the buffer region can range from 25 to 200 square nanometers; the size of the outer region can range from 50 to 500 square nanometers; the size of the conflict region 3 can range from 5 to 100 square nanometers, and all of them can be specifically set according to needs.

[0053] Further, the layout design requirements include initial layout design requirements and adjusted layout design requirements. Specifically, the initial layout design requirements include that the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold of the multiple mask patterns. That is, the initial layout design requirements are the design requirements for the mask pattern layout to form multiple patterns through the self-aligned multiple patterning process when the mask pattern layout has not undergone any modification operations. That is to say, when this requirement is met, the mask pattern can be divided into multiple mask patterns; when this requirement is not met, the mask pattern cannot be divided into multiple mask patterns.

[0054] More specifically, the adjusted layout design requirements include: within the conflict region, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the adjusted spacing threshold; and the adjusted spacing threshold is less than or equal to the initial spacing threshold; outside the conflict region, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold. That is to say, when there is a hot spot pattern, a conflict region needs to be established around the hot spot pattern, and the patterns within the conflict region are adjusted. After the initial layout design, in the region of the hot spot pattern, since the pattern spacing is too small, the mask still cannot perform the self-aligned multiple patterning process to form multiple masks, then adjustment is still needed. When making adjustments, the spacing threshold can be appropriately reduced so that the distance of the hot spot pattern can meet the requirements for performing the self-aligned multiple patterning. The requirements that need to be met during this adjustment are the adjusted layout design requirements.

[0055] It should be noted that if after the first adjustment, in the region of the hot spot pattern, since the pattern spacing is too small, the mask still cannot perform the self-aligned multiple patterning process to form multiple masks, then a second, or even third, fourth adjustment is still needed until the requirements are met. And when making subsequent adjustments, the layout design requirements can be reduced. The requirements and standards referred to during this second, third, and even more subsequent adjustments are the adjusted layout design requirements.

[0056] Specifically, refer to Figures 2 to 5 . In this embodiment, the method for forming a multi-mask pattern includes: analyzing the multi-mask pattern layout Figure 1 to determine the hot spot pattern 2 that does not meet the initial layout design requirements in the multi-mask pattern layout Figure 1 . Then, adjust the hot spot pattern 2 so that the distance between adjacent patterns on each mask pattern layer within the conflict area 3 is greater than or equal to the adjusted spacing threshold; the distance between adjacent patterns on each mask pattern layer outside the conflict area 3 is greater than or equal to the initial design spacing threshold.

[0057] When adjusting the hot spot pattern 2 to make the adjusted multi-mask pattern layout Figure 1 meet the layout design requirements, it includes: forming a multi-mask pattern layout Figure 1 with different mask layers distinguished by different colors according to the initial layout design requirements, then obtaining the distance between adjacent patterns on each mask layer of the multi-mask pattern layout, and determining whether the distance is less than the design spacing threshold; if so, determining the adjacent patterns as hot spot patterns.

[0058] It should be understood that when adjusting the hot spot pattern 2, the pattern layout of the buffer area 4 needs to be used as a reference. Redesigning the layout of the conflict area 3 with the layout of the buffer area 4 as a reference includes: determining the area containing the hot spot pattern 2 as the conflict area 3, forming a buffer area 4 around the conflict area 3 outside the conflict area 3, then erasing the coloring of the area where the conflict area 3 is located on the multi-mask pattern layout Figure 1 , and recoloring the conflict area 3 according to the layout design of the multi-layer mask patterns in the buffer area 4, that is, redesigning the layout, and forming a new mask pattern that meets the supplementary layout design requirements in the conflict area 3.

[0059] It should also be understood that in addition to the method of erasing and recoloring the coloring within the conflict area 3, the spacing between the conflicting hot spot patterns 2 can also be adjusted to make the layout design meet the requirements. The mask pattern layout Figure 1 after adjustment and meeting the requirements is as Figure 4 shown.

[0060] Furthermore, referring to the coloring method of the buffer area 4, when coloring the conflict area 3, in order to make the coloring of the conflict area 3 more easily meet the requirements without affecting the formation of the self-aligned triple pattern, the spacing threshold can be adjusted to be a little smaller, that is, the distance between adjacent mask patterns within the conflict area 3 can be made to meet the adjusted design layout requirements. It should be noted that when recoloring the patterns in the conflict area 3, the pattern layout of the external area 5 can also be used as a reference. The specific operation method is similar to using the pattern layout of the buffer area 4 as a reference, and will not be elaborated in this embodiment.

[0061] For ease of understanding, in this embodiment, the process of forming a triple mask pattern for the method of forming a self-aligned triple pattern will be described. Specifically, as Figures 2 to 5 shown, first, a colored multi-mask pattern layout is formed according to the initial layout design requirements. Figure 1 For the formation of a self-aligned triple pattern, three different colors need to be filled. Each rectangular block in the figure is a pattern on a certain mask pattern layer, and patterns with the same shade of filled color are on the same mask layer. Then, it is determined whether the distance between two adjacent patterns among the patterns with the same color is less than the design spacing threshold; if so, the adjacent patterns are determined to be hot spot patterns 2. As Figure 5 shown, the area around the hot spot pattern 2 is determined as the conflict area 3, and the area around the conflict area 3 is determined as the buffer area 4.

[0062] Next, the color in the conflict area 3 is erased, and the patterns in the conflict area 3 are recolored. When recoloring, the coloring of the layout in the buffer area 4 is used as a reference. At the same time, the design spacing threshold can be adjusted smaller to make it easier for the coloring of the conflict area 3 to meet the requirements. After recoloring, the self-aligned triple pattern is formed.

[0063] Furthermore, when determining the hot spot pattern 2, it can be to first find all the hot spot patterns 2 on the mask pattern layout Figure 1 , then establish a conflict area 3 near the hot spot pattern 2, and then re-layout the conflict area 3; and, only one conflict area 3 can be established, that is, this conflict area 3 includes all the hot spot patterns 2; the conflict area 3 can also be set in multiple numbers according to the number of hot spot patterns 2, and this embodiment does not make specific limitations on this. It can also be to find a group of hot spot patterns 2, then establish a conflict area 3 and re-layout, and repeat this step until all the hot spot patterns 2 meet the layout design requirements.

[0064] With the above technical solution, by determining the hot spot patterns in the multi-mask pattern that do not meet the layout design requirements of the mask pattern layout, and then making local adjustments to the area where the hot spot patterns are located. Compared with the operation method in the prior art of returning the layout to the design manufacturer for re-layout design after finding hot spot patterns that do not meet the layout design requirements of the multi-mask pattern during the processing, this method first finds the conflicts, then makes local processing on the conflicting hot spot patterns to resolve the conflicts, and then uses the finally determined multi-mask pattern layout for processing, effectively reducing the intermediate links and turnover time, and improving work efficiency.

[0065] Embodiment 2:

[0066] Based on the operation steps of Embodiment 1, this embodiment provides a more specific method for forming a multi-mask pattern. Specifically, please refer to Figure 6 . This method specifically includes:

[0067] Step S61: Input of graphic data file.

[0068] Specifically, relevant layout data is extracted from the layout file to form a layout structure of a mask pattern, and preparation for manufacturing a mask is carried out.

[0069] Step S62: Formation of self-aligned multiple patterns, and splitting the original pattern into multiple mask patterns.

[0070] Specifically, the original pattern is the layout structure of the mask pattern formed by extracting relevant layout data from the layout file. The multiple mask patterns formed after the process of forming self-aligned multiple patterns are the multiple patterns formed.

[0071] Step S63: Determine whether there is a conflict when forming self-aligned multiple patterns.

[0072] Specifically, the distance between adjacent patterns on each layer of the mask pattern layer is obtained, and it is determined whether this distance is less than the design pitch threshold. If the determination is yes, then step S64 is carried out; if the determination is no, then it ends.

[0073] Step S64: Determine the conflict area according to the hot spot pattern, establish a buffer zone on the periphery of the conflict area, and establish an external area on the periphery of the buffer zone.

[0074] Specifically, the part on the periphery of the hot spot pattern is determined as the conflict area, a range outside the conflict area is the buffer zone, and a range outside the buffer zone is the external area.

[0075] Step S65: Taking the layout of the pattern in the buffer zone as a reference, re-layout design of the hot spot pattern in the conflict area is carried out according to the layout design requirements.

[0076] That is, according to the pattern in the buffer zone, the pattern in the conflict area is adjusted so that the distance between adjacent patterns on each layer of the mask pattern layer in the conflict area is greater than or equal to the design pitch threshold.

[0077] Further, in this embodiment, after adjusting the foregoing conflict, step S63 can be further executed until there is no conflict.

[0078] That is, first analyze the layout of the multiple mask patterns to determine the hot spot patterns in the layout of the multiple mask patterns that do not meet the initial layout design requirements; then, adjust the hot spot patterns so that the distance between adjacent patterns on each layer of the mask pattern layer in the conflict area is greater than or equal to the adjusted pitch threshold, and the distance between adjacent patterns on each layer of the mask pattern layer outside the conflict area is greater than or equal to the initial design pitch threshold.

[0079] Using the above method to form a multi - mask pattern, by determining the hot - spot patterns in the multi - mask pattern that do not meet the layout design requirements of the mask pattern layout, and then making local adjustments to the area where the hot - spot patterns are located. Compared with the operation method in the prior art of returning the layout to the design manufacturer for re - layout design after finding hot - spot patterns that do not meet the layout design requirements of the multi - mask pattern layout during the processing, this method first finds the conflicts, then makes local processing of the conflicting hot - spot patterns to resolve the conflicts, and then uses the finally determined multi - mask pattern layout for processing, effectively reducing the intermediate links and turnover time and improving work efficiency.

[0080] Embodiment 3:

[0081] According to the operation methods of Embodiment 1 and Embodiment 2, in this embodiment, a semiconductor device is obtained, and the pattern of the multi - mask of the semiconductor device is obtained based on the methods of Embodiment 1 and Embodiment 2. Specifically, it includes: analyzing the multi - mask pattern layout to determine the hot - spot patterns in the multi - mask pattern layout that do not meet the layout design requirements of the multi - mask pattern layout; adjusting the hot - spot patterns so that the adjusted multi - mask pattern layout meets the layout design requirements.

[0082] For the semiconductor device formed by the above method, by determining the hot - spot patterns in the multi - mask pattern that do not meet the layout design requirements of the mask pattern layout, and then making local adjustments to the area where the hot - spot patterns are located. Compared with the operation method in the prior art of returning the layout to the design manufacturer for re - layout design after finding hot - spot patterns that do not meet the layout design requirements of the multi - mask pattern layout during the processing, this method first finds the conflicts, then makes local processing of the conflicting hot - spot patterns to resolve the conflicts, and then uses the finally determined multi - mask pattern layout for processing, effectively reducing the intermediate links and turnover time and improving work efficiency.

[0083] To solve the problems in the prior art that the process of forming a multi - mask pattern is complex and time - consuming. The present invention provides a method for forming a multi - mask pattern, including: analyzing the multi - mask pattern layout to determine the hot - spot patterns in the multi - mask pattern layout that do not meet the layout design requirements of the multi - mask pattern layout; adjusting the hot - spot patterns so that the adjusted multi - mask pattern layout meets the layout design requirements.

[0084] According to another specific embodiment of the present invention, a method for forming a multi - mask pattern disclosed in the embodiment of the present invention, the layout design requirements include: the distance between adjacent patterns on each mask pattern layer is greater than or equal to the design spacing threshold of the multi - mask pattern.

[0085] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention analyzes the layout of the multiple mask pattern to determine hot spot patterns in the layout of the multiple mask pattern that do not meet the layout design requirements of the multiple mask pattern layout, including: obtaining the distance between adjacent patterns on each mask pattern layer and determining whether the distance is less than the design spacing threshold; if so, determining the adjacent patterns as hot spot patterns.

[0086] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention adjusts the hot spot patterns so that the adjusted layout of the multiple mask pattern meets the layout design requirements, including: determining a conflict area based on the hot spot patterns and establishing a buffer area on the periphery of the conflict area; using the pattern layout of the buffer area as a reference, at least re-layout designing the hot spot patterns in the conflict area according to the layout design requirements so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the design spacing threshold;

[0087] Or determining a conflict area based on the hot spot patterns, establishing a buffer area on the periphery of the conflict area, and determining the area outside the buffer area as the external area;

[0088] Using the pattern layout of the buffer area and the pattern layout of the external area as a reference, at least re-layout designing the hot spot patterns in the buffer area according to the layout design requirements so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the design spacing threshold.

[0089] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention determines a conflict area based on the hot spot patterns, including: determining the area surrounding the conflict area as the buffer area.

[0090] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention establishes a buffer area on the periphery of the conflict area, including: determining a partial area surrounding the conflict area as the buffer area; determining the area outside the buffer area as the external area.

[0091] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention, the area of the external area is greater than the area of the buffer area.

[0092] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention, the layout design requirements include initial layout design requirements and adjusted layout design requirements;

[0093] The initial layout design requirements include: the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold of the multiple mask patterns; the adjusted layout design requirements include: within the conflict area, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the adjusted spacing threshold, and the adjusted spacing threshold is less than or equal to the initial spacing threshold; outside the conflict area, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold.

[0094] According to another specific embodiment of the present invention, a method for forming a multiple mask pattern disclosed by the embodiment of the present invention includes analyzing the layout of the multiple mask pattern to determine the hot spot patterns in the layout of the multiple mask pattern that do not meet the initial layout design requirements; adjusting the hot spot patterns so that the distance between adjacent patterns on each mask pattern layer within the conflict area is greater than or equal to the adjusted spacing threshold, and the distance between adjacent patterns on each mask pattern layer outside the conflict area is greater than or equal to the initial design spacing threshold.

[0095] The embodiment of the present invention also discloses a semiconductor device, which includes a multiple mask pattern formed by the above method for forming a multiple mask pattern.

[0096] Although the present invention has been illustrated and described by referring to some preferred embodiments of the present invention, those of ordinary skill in the art should understand that the above content is a further detailed description of the present invention in combination with specific embodiments, and it cannot be determined that the specific implementation of the present invention is only limited to these descriptions. Those skilled in the art can make various changes in form and details, including making several simple deductions or substitutions, without departing from the spirit and scope of the present invention.

Claims

1. A method for forming a multiple mask pattern, characterized in that Comprising: Analyzing a multi-mask pattern layout to determine hot-spot patterns in the multi-mask pattern layout that do not meet the layout design requirements of the multi-mask pattern layout; Adjusting the hot-spot patterns so that the adjusted multi-mask pattern layout meets the layout design requirements; Wherein adjusting the hot-spot patterns so that the adjusted multi-mask pattern layout meets the layout design requirements includes: Determining a conflict area based on the hot-spot patterns, establishing a buffer area on the periphery of the conflict area, and determining the area outside the buffer area as the external area; Taking the pattern layout of the buffer area and the pattern layout of the external area as references, and at least re-layout designing the hot-spot patterns in the buffer area according to the layout design requirements so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the design spacing threshold.

2. The method for forming a multiple mask pattern according to claim 1, wherein The layout design requirements include: The distance between adjacent patterns on each mask pattern layer is greater than or equal to the design spacing threshold of the multi-mask pattern.

3. The method for forming a multi-mask pattern according to claim 2, wherein The analyzing the multi-mask pattern layout to determine hot-spot patterns in the multi-mask pattern layout that do not meet the layout design requirements of the multi-mask pattern layout includes: Obtaining the distance between adjacent patterns on each mask pattern layer and determining whether the distance is less than the design spacing threshold; if so, determining the adjacent patterns as the hot-spot patterns.

4. The method for forming a multiple mask pattern according to claim 1, wherein Determining a conflict area based on the hot-spot patterns includes: Determining the hot-spot patterns and their surrounding areas as the conflict area.

5. The method for forming a multiple mask pattern according to claim 4, wherein, Establishing a buffer area on the periphery of the conflict area includes: determining the area surrounding the conflict area as the buffer area.

6. The method for forming a multi-mask pattern according to claim 5, wherein The area of the external area is greater than the area of the buffer area.

7. The method for forming a multi-mask pattern according to any one of claims 1-6, characterized in that, The layout design requirements include initial layout design requirements and adjusted layout design requirements; The initial layout design requirements include: The distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold of the multi-mask pattern; The adjusted layout design requirements include: In the conflict area, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the adjusted spacing threshold, and the adjusted spacing threshold is less than or equal to the initial design spacing threshold; Outside the conflict area, the distance between adjacent patterns on each mask pattern layer is greater than or equal to the initial design spacing threshold.

8. The method for forming a multiple mask pattern according to claim 7, wherein Comprising: Analyzing a multi-mask pattern layout to determine the hot-spot patterns in the multi-mask pattern layout that do not meet the initial layout design requirements; Adjusting the hot-spot patterns so that the distance between adjacent patterns on each mask pattern layer in the conflict area is greater than or equal to the adjusted spacing threshold, and the distance between adjacent patterns on each mask pattern layer outside the conflict area is greater than or equal to the initial design spacing threshold.

9. A semiconductor device, characterized in that, The semiconductor device includes a multi-mask pattern, and the multi-mask pattern is formed based on the method for forming a multi-mask pattern according to any one of claims 1-8.

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