A radio frequency bias circuit packaging structure

Abstract

A radio frequency bias circuit packaging structure, the radio frequency bias circuit packaging structure includes a packaging component, a power amplifier is packaged in the packaging component; a radio frequency bias circuit, the radio frequency bias circuit includes a radio frequency choke component, a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the radio frequency choke component; the packaging component covers the radio frequency choke component. Through the technical solution of the present invention, the connection relationship between the radio frequency choke component and the power amplifier is realized, and the radio frequency signal is avoided from affecting the characteristics of the DC bias voltage source. At the same time, the problem of the power amplifier module occupying a large area of ​​the printed circuit board caused by the radio frequency bias circuit setting a long bias line on the printed circuit board is avoided, which is conducive to reducing the size of the power amplifier module and improving the integration of the printed circuit board.

Description

Technical Field

[0001] The embodiments of the present invention relate to the packaging field, and in particular to a radio frequency bias circuit packaging structure. Background Art

[0002] The power amplifier is an important component in wireless communication systems. The power amplifier is used to amplify the input signal and then output it. In the process of performing the amplification function, the power amplifier converts DC energy into RF energy.

[0003] At present, it is difficult to integrate the power amplifier module with other modules. Most of the power amplifier modules are connected to the whole system in the form of a separate module, which makes the power amplifier module occupy a large size of the whole wireless communication system, which is not conducive to the miniaturization of the whole wireless communication system. In addition, the traditional power amplifier needs to be equipped with a bias circuit to match the power amplifier during actual operation to provide a bias voltage for the power amplifier to perform the amplification function. However, the bias circuit of the power amplifier currently used needs to introduce a longer bias line on the printed circuit board, and the longer bias line occupies a larger area of ​​the printed circuit board, and the printed circuit board has a low integration degree. Summary of the invention

[0004] In view of this, an embodiment of the present invention provides a radio frequency bias circuit packaging structure, which realizes the connection relationship between the radio frequency choke component and the power amplifier, avoids the radio frequency signal affecting the characteristics of the DC bias voltage source, and avoids the problem of the power amplifier module occupying a large area of ​​the printed circuit board caused by setting a long bias line on the printed circuit board of the radio frequency bias circuit, which is beneficial to reducing the size of the power amplifier module and improving the integration of the printed circuit board.

[0005] An embodiment of the present invention provides a radio frequency bias circuit packaging structure, including:

[0006] A packaging component, wherein a power amplifier is packaged in the packaging component;

[0007] A radio frequency bias circuit, wherein the radio frequency bias circuit comprises a radio frequency choke component, and a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the radio frequency choke component;

[0008] The packaging component covers the radio frequency choke component.

[0009] Furthermore, the packaging component includes a plurality of pads, the RF choke component is arranged in an area corresponding to where some of the pads of the packaging component are located, and the RF choke component is electrically connected to some of the pads.

[0010] Furthermore, the radio frequency choke component extends along the arrangement direction of the partial pads.

[0011] Furthermore, a resonant circuit is also encapsulated in the packaging component, and the resonant circuit includes a resonant inductor and a resonant capacitor, the first end of the resonant inductor is electrically connected to the pad corresponding to one end of the RF choke component, the second end of the resonant inductor is electrically connected to the first end of the resonant capacitor, and the second end of the resonant capacitor is connected to a fixed voltage.

[0012] Furthermore, the pad corresponding to one end of the RF choke component is electrically connected to the DC bias voltage source, and the pad corresponding to the other end of the RF choke component is electrically connected to the drain of the power amplifier.

[0013] Further, the resonant inductor includes a bonding wire, and / or the resonant capacitor includes an IPD.

[0014] Furthermore, the radio frequency choke component is arranged in an area on the printed circuit board for arranging the packaging component, and the packaging component is attached to the radio frequency choke component.

[0015] Furthermore, the radio frequency choke component is attached to the packaging component.

[0016] Furthermore, the radio frequency choke component is a microstrip line.

[0017] Further, the packaging component is a QFN packaging component or the packaging component is a DFN packaging component.

[0018] An embodiment of the present invention provides a radio frequency bias circuit packaging structure, the radio frequency bias circuit packaging structure includes a packaging component and a radio frequency bias circuit, a power amplifier is packaged in the packaging component, the radio frequency bias circuit includes a radio frequency choke component, a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the radio frequency choke component, and the packaging component covers the radio frequency choke component. In this way, the embodiment of the present invention realizes the connection relationship between the radio frequency choke component and the power amplifier, avoids the radio frequency signal affecting the characteristics of the DC bias voltage source, and at the same time, arranges the packaging component to cover the radio frequency choke component, avoids the problem of the power amplifier module occupying a large area of ​​the printed circuit board caused by the radio frequency bias circuit setting a longer bias line on the printed circuit board, which is beneficial to reducing the size of the power amplifier module and improving the integration of the printed circuit board. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the background technology, the following is a brief introduction to the drawings required for use in the description of the embodiments or the background technology. Obviously, the drawings described below are schematic diagrams of some embodiments of the present invention. For ordinary technicians in this field, other solutions can be obtained based on these drawings without paying creative work.

[0020] Figure 1 A schematic structural diagram of a radio frequency bias circuit packaging structure provided by an embodiment of the present invention;

[0021] Figure 2 A schematic diagram of the connection relationship between a power amplifier and a radio frequency bias circuit provided in an embodiment of the present invention;

[0022] Figure 3 It is a schematic diagram of the structure of the power amplifier and radio frequency bias circuit used in the prior art. DETAILED DESCRIPTION

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings and examples. It will be appreciated that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings. Throughout this specification, the same or similar reference numerals represent the same or similar structures, elements or processes. It should be noted that, in the absence of conflict, the embodiments in this application and the features in the embodiments may be combined with each other.

[0024] An embodiment of the present invention provides a radio frequency bias circuit packaging structure, including a packaging component and a radio frequency bias circuit, wherein a power amplifier is packaged in the packaging component, the radio frequency bias circuit includes a radio frequency choke component, a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the radio frequency choke component, and the packaging component covers the radio frequency choke component.

[0025] The power amplifier is an important component in the wireless communication system. The power amplifier is used to amplify the input signal and then output it. In the process of the power amplifier performing the amplification function, the power amplifier converts DC energy into radio frequency energy. At present, the power amplifier module is difficult to integrate with other modules. Most of the power amplifier modules are connected to the whole system in the form of separate modules, which makes the power amplifier module occupy a large size of the wireless communication system, which is not conducive to the miniaturization of the wireless communication system. In addition, the traditional power amplifier needs to be provided with a bias circuit that cooperates with the power amplifier during actual operation to provide a bias voltage for the power amplifier to perform the amplification function. However, the bias circuit of the power amplifier currently used needs to introduce a longer bias line on the printed circuit board, and the longer bias line occupies a larger area of ​​the printed circuit board, and the printed circuit board has a low degree of integration.

[0026] The RF bias circuit packaging structure provided by the embodiment of the present invention includes a packaging component and an RF bias circuit, wherein a power amplifier is packaged in the packaging component, and the RF bias circuit includes an RF choke component, and a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the RF choke component, and the packaging component covers the RF choke component. In this way, the embodiment of the present invention realizes the connection relationship between the RF choke component and the power amplifier and avoids the RF signal affecting the characteristics of the DC bias voltage source. At the same time, the packaging component is arranged to cover the RF choke component, that is, the RF bias circuit is integrated inside the packaging component, thereby avoiding the problem that the power amplifier module occupies a large area of ​​the printed circuit board due to the setting of a longer bias line of the RF bias circuit on the printed circuit board, which is beneficial to reducing the size of the power amplifier module and improving the integration of the printed circuit board.

[0027] The above is the core idea of ​​the present invention. The technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] Figure 1 A schematic diagram of a radio frequency bias circuit packaging structure provided by an embodiment of the present invention, Figure 2 A schematic diagram of the connection relationship between a power amplifier and a radio frequency bias circuit provided by an embodiment of the present invention. Figure 1 and Figure 2 The RF bias circuit packaging structure includes a packaging component 1 and a RF bias circuit 2. The packaging component 1 encapsulates a power amplifier Die, and the RF bias circuit 2 includes a RF choke component TL. The port of the power amplifier Die electrically connected to the output load 5 is electrically connected to the DC bias voltage source VDD via the RF choke component TL, and the packaging component 1 covers the RF choke component TL.

[0029] Specifically, the power amplifier Die is used to amplify the input signal and then output it, converting DC energy into RF energy. The power amplifier Die may include GaN or GaAs high electron mobility transistors. The power amplifier Die needs to be provided with an input bias circuit and an output bias circuit at the same time during actual operation. The input bias circuit provides a gate bias voltage for the power amplifier Die, and the output bias circuit provides a drain bias circuit for the power amplifier Die. The RF bias circuit 2 of the embodiment of the present invention is the output bias circuit. In addition, in combination with Figure 1 and Figure 2The RF bias circuit 2 includes an RF choke component TL. The power amplifier Die outputs an RF signal to the output load 5 through the drain D. The RF choke component TL can effectively prevent the RF signal output by the drain D of the power amplifier Die from being transmitted to the DC bias voltage source VDD and affecting the characteristics of the DC bias voltage source VDD.

[0030] Figure 3 The schematic diagram of the structure of the power amplifier and RF bias circuit used in the prior art is shown in FIG. Figure 3 As shown, the RF bias circuit of the prior art needs to introduce a longer bias line 30 on the printed circuit board, and at the same time, a surface-mount capacitor C is set on the printed circuit board. f0 A filter circuit is formed to filter out the RF signal output from the power amplifier Die to the output load 5, to prevent the RF signal from being transmitted to the DC bias voltage source VDD and affecting the characteristics of the DC bias voltage source VDD. The longer bias line 30 and the chip capacitor C f0 It occupies a larger area on the printed circuit board, increases the size of the power amplifier module, and reduces the integration of the printed circuit board.

[0031] Combination Figure 1 and Figure 2 In an embodiment of the present invention, a port of the power amplifier Die electrically connected to the output load 5 is electrically connected to the DC bias voltage source VDD via the RF choke component TL. The power amplifier Die is encapsulated in the packaging component 1, and the packaging component 1 covers the RF choke component TL. While realizing the connection relationship between the RF choke component TL and the power amplifier Die, and avoiding the RF signal being transmitted to the DC bias voltage source VDD to affect the characteristics of the DC bias voltage source VDD, the RF bias circuit 2 is integrated inside the package, avoiding the problem of the power amplifier Die module occupying a large area of ​​the printed circuit board caused by setting a long bias line on the printed circuit board of the RF bias circuit 2, which is beneficial to reducing the size of the power amplifier module and improving the integration of the printed circuit board.

[0032] For example, Figure 2 As shown, the output load 5 may include an output matching network Z0 and a load impedance ZL. The output matching network Z0 is used to provide a suitable load impedance for the power amplifier Die to ensure that the power amplifier Die has good power amplifier power, efficiency and linearity characteristics.

[0033] Optionally, combined Figure 1 and Figure 2, the RF choke component TL can be arranged in the area on the printed circuit board for setting the package component 1. For example, the RF choke component TL can be arranged on the surface of the area on the printed circuit board for setting the package component 1, and the package component 1 is attached to the RF choke component TL. Exemplarily, the RF choke component TL can be set as a microstrip line. The RF choke component TL formed by the microstrip line has a wide frequency band, high reliability and low manufacturing cost. The material constituting the microstrip line may include copper. The copper wire can be directly laid on the printed circuit board to form the RF choke component TL. The package component 1 encapsulated with the power amplifier Die is attached to the RF choke component TL, that is, attached to the copper wire, so as to integrate the RF bias circuit 2 inside the package, reduce the size of the power amplifier module, and improve the integration of the printed circuit board.

[0034] Optionally, combined Figure 1 and Figure 2 The RF choke component TL can also be attached to the packaging component 1. Similarly, the RF choke component TL can be set as a microstrip line. The material constituting the microstrip line can include copper. The copper wire can be directly attached to the packaging component 1 to integrate the RF bias circuit 2 inside the package, reduce the size of the power amplifier module, and improve the integration of the printed circuit board.

[0035] Optionally, combined Figure 1 and Figure 2 The package component 1 may include a plurality of pads 3, and the RF choke component TL is arranged in an area corresponding to the area where some of the pads 3 of the package component 1 are located, and the RF choke component TL is electrically connected to some of the pads 3. Specifically, the package component 1 may be arranged to be attached to the RF choke component TL through some of the pads 3, for example, in a direction perpendicular to the surface of the package component 1. Figure 2 All the pads 3 of the package components 1 that overlap with the RF choke component TL are electrically connected to the RF choke component TL. It should be noted that: Figure 2 The area where the pads 3 of the upper and right sides of the packaging component 1 are located corresponding to the RF choke component TL is shown for example only, and the embodiment of the present invention does not limit the specific area where the pads 3 of the packaging component 1 of the RF choke component TL is located.

[0036] Optionally, combined Figure 1 and Figure 2 The RF choke component TL can be arranged to extend along the arrangement direction of some of the pads 3. This is beneficial for realizing the electrical connection between the RF choke component TL and the corresponding some of the pads 3, while reducing the influence of the RF choke component TL on the area of ​​the packaging component 1 where the corresponding some of the pads 3 are provided. It also enables the two ends of the RF choke component TL to be respectively provided with two pads 3 so as to be electrically connected to the internal devices of the packaging component 1 through the corresponding pads 3.

[0037] Optionally, combined Figure 1 and Figure 2 The packaging component 1 may be provided with a resonant circuit 4, the resonant circuit 4 includes a resonant inductor LS and a resonant capacitor CS, a first end of the resonant inductor LS is electrically connected to a pad 3 corresponding to one end of the RF choke component TL, a second end of the resonant inductor LS is electrically connected to a first end of the resonant capacitor CS, a second end of the resonant capacitor CS is electrically connected to a fixed voltage end, and here the second end of the resonant capacitor CS is exemplarily provided to be electrically connected to a ground end GND.

[0038] Optionally, combined Figure 1 and Figure 2 The pad 3 corresponding to one end of the first end of the RF choke component TL electrically connected to the resonant inductor LS can be electrically connected to the DC bias voltage source VDD, and the pad 3 corresponding to the other end of the RF choke component TL is electrically connected to the drain D of the power amplifier Die.

[0039] Specifically, the power amplifier Die may include a GaN or GaAs high electron mobility transistor. In order to effectively filter out the RF signal output from the drain D of the power amplifier Die to the output load 5 and prevent the RF signal from being transmitted to the DC bias voltage source VDD and affecting the characteristics of the DC bias voltage source VDD, one end of the RF choke component TL needs to be electrically connected to the drain D of the power amplifier Die, and the other end needs to be electrically connected to the DC bias voltage source VDD. The power amplifier Die is packaged in the packaging component 1, and the DC bias voltage source VDD can be set in an area outside the area where the packaging component 1 is located on the printed circuit board. The RF choke component TL is set to extend along the arrangement direction of the part of the pads 3 corresponding to the RF choke component TL. When the RF choke component TL is set in the area where the pads 3 are set in the packaging component 1, that is, the RF choke component TL is set inside the packaging component 1, it is beneficial to realize the electrical connection relationship between the RF choke component TL and the power amplifier Die and the DC bias voltage source VDD through the pads 3.

[0040] Optionally, combined Figure 1 and Figure 2, a pad 3 corresponding to one end of the RF choke component TL electrically connected to the drain D of the power amplifier Die can be set to be electrically connected to the drain D of the power amplifier Die through a bonding wire LS2. Specifically, one end of the bonding wire LS2 can be hit on the pad 3 corresponding to one end of the RF choke component TL electrically connected to the drain D of the power amplifier Die, and the other end can be hit on the drain D of the power amplifier Die located inside the packaging component 1, so as to realize the electrical connection between the pad 3 corresponding to one end of the RF choke component TL electrically connected to the drain D of the power amplifier Die and the drain D of the power amplifier Die. In addition, a DC bias voltage source VDD can be set on a printed circuit board, and the pad 3 corresponding to one end of the RF choke component TL electrically connected to the DC bias voltage source VDD can be directly electrically connected to the DC bias voltage source VDD through a copper wire located on the printed circuit board. It should be noted that Figure 2 The shape of the radio frequency choke component TL is merely shown for exemplary purposes, and the embodiment of the present invention does not specifically limit the shape of the radio frequency choke component TL.

[0041] Specifically, the drain D of the power amplifier Die outputs a radio frequency signal to the output load 5, and the radio frequency signal is filtered through the radio frequency choke component TL to prevent the radio frequency signal from being transmitted to the DC bias voltage source VDD and affecting the characteristics of the DC bias voltage source VDD. Exemplarily, the resonance circuit 4 can be set to resonate at the frequency of the radio frequency signal output from the drain D of the power amplifier Die. When the radio frequency choke component TL cannot completely filter out the radio frequency signal passing through the radio frequency choke component TL, the setting of the resonance circuit 4 enables the radio frequency signal to be transmitted to one end of the resonance circuit 4, that is, when the resonance inductor LS is electrically connected to one end of the radio frequency choke component TL, the resonance circuit 4 short-circuits the radio frequency signal to a fixed voltage end, such as the ground end GND, further avoiding the problem of the radio frequency signal being transmitted to the DC bias voltage source VDD and affecting the characteristics of the DC bias voltage source VDD.

[0042] A pad 3 corresponding to one end of the first end of the resonant inductor LS electrically connected to the RF choke component TL is electrically connected to the DC bias voltage source VDD, so that for the RF signal output from the drain D of the power amplifier Die, the resonant inductor LS and the resonant capacitor CS form a resonant circuit 4 and form two parallel filter branches with the RF choke component TL, so as to further avoid the problem that the RF signal is transmitted to the DC bias voltage source VDD and affects the characteristics of the DC bias voltage source VDD.

[0043] Optionally, the resonant inductor LS may include a bonding wire LS1, and / or the resonant capacitor CS may include an IPD. Specifically, the IPD (Intergrated Passive Device) implements capacitance inside the chip, and the IPD includes electronic components such as capacitors and inductors, which can be equivalent to the resonant capacitor CS, and the resonant inductor LS includes a bonding wire LS1, that is, the bonding wire LS1 constitutes the resonant inductor LS, and one end of the bonding wire LS1 is electrically connected to the DC bias voltage source VDD, that is, the pad 3 corresponding to one end of the RF choke component TL electrically connected to the DC bias voltage source VDD. In addition, considering the high cost of the IPD, the RF bias circuit 2 in the same frequency range can reuse the same IPD.

[0044] Optionally, the package component 1 may be set as a QFN package component. The QFN (Quad Flat No-lead package) package component is one of the surface mount packages. The QFN package is a leadless package. The QFN package component is square or rectangular. A large exposed pad is provided at the center of the bottom of the package component for heat conduction. Conductive pads for achieving electrical connection are provided around the periphery of the large pad, i.e., the pads 3 mentioned in the above embodiment. The package component 1 may also be set as a DFN package component. The difference between the DFN (Dual Flat No-lead package) package component and the QFN package component is that the DFN package component only has conductive pads for achieving electrical connection on both sides of the package component 1. The package component 1 may also adopt other packaging forms, which are not limited in the embodiments of the present invention.

[0045] It should be noted that the drawings shown in the embodiments of the present invention are only exemplary representations of the sizes of the various components and do not represent the actual sizes of the various components in the display RF bias circuit packaging structure.

[0046] The RF bias circuit packaging structure provided by the embodiment of the present invention includes a packaging component and a RF bias circuit, wherein a power amplifier is packaged in the packaging component, and the RF bias circuit includes a RF choke component, and a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the RF choke component, and the packaging component covers the RF choke component. In this way, the embodiment of the present invention realizes the connection relationship between the RF choke component and the power amplifier, avoids the RF signal affecting the characteristics of the DC bias voltage source, and at the same time, arranges the packaging component to cover the RF choke component, avoids the problem of the power amplifier module occupying a large area of ​​the printed circuit board caused by setting a longer bias line on the printed circuit board of the RF bias circuit, which is beneficial to reducing the size of the power amplifier module and improving the integration of the printed circuit board.

[0047] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A radio frequency bias circuit packaging structure, characterized in that: include: A packaging component, wherein a power amplifier is packaged in the packaging component; A radio frequency bias circuit, wherein the radio frequency bias circuit comprises a radio frequency choke component, and a port of the power amplifier electrically connected to an output load is electrically connected to a DC bias voltage source via the radio frequency choke component; The packaging component covers the radio frequency choke component; The packaging component includes a plurality of pads; A resonant circuit is also encapsulated in the package component, and the resonant circuit includes a resonant inductor and a resonant capacitor, a first end of the resonant inductor is electrically connected to the pad corresponding to one end of the RF choke component, a second end of the resonant inductor is electrically connected to the first end of the resonant capacitor, and a second end of the resonant capacitor is connected to a fixed voltage; The radio frequency choke component is a microstrip line.

2. The RF bias circuit packaging structure according to claim 1, characterized in that: The radio frequency choke component is arranged in an area corresponding to a portion of the pads of the packaging component, and the radio frequency choke component is electrically connected to the portion of the pads.

3. The RF bias circuit packaging structure according to claim 2, characterized in that: The radio frequency choke component extends along an arrangement direction of the partial pads.

4. The RF bias circuit packaging structure according to claim 1, characterized in that: The pad corresponding to one end of the RF choke component is electrically connected to the DC bias voltage source, and the pad corresponding to the other end of the RF choke component is electrically connected to the drain of the power amplifier.

5. The RF bias circuit packaging structure according to claim 1, characterized in that: The resonant inductor includes a bonding wire, and / or the resonant capacitor includes an IPD.

6. The RF bias circuit packaging structure according to claim 1, characterized in that: The radio frequency choke component is arranged in an area on a printed circuit board for arranging the packaging component, and the packaging component is attached to the radio frequency choke component.

7. The RF bias circuit packaging structure according to claim 1, characterized in that: The radio frequency choke component is attached to the packaging component.

8. The RF bias circuit packaging structure according to claim 1, characterized in that: The packaging component is a QFN packaging component or the packaging component is a DFN packaging component.

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