Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for manufacturing a semiconductor device. An electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure includes a plurality of conductive pads. First and second electronic devices are positioned adjacent to the top surface. The first electronic device is interposed between the first and second conductive pads, and the second electronic device is interposed between the second and third conductive pads. A continuous conductive wire structure including a first bonding structure is connected to the first conductive pad, a second bonding structure is connected to the second conductive pad, and a third bonding structure is connected to the third conductive pad. A first conductive wire portion is interconnected between the first and second bonding structures and positioned overlying the first electronic device, and a second conductive wire portion is interconnected between the second and third bonding structures and positioned overlying the second electronic device.

Description

Technical Field

[0001] The present disclosure relates generally to electronic devices, and more particularly, to semiconductor devices and methods for manufacturing semiconductor devices. Background Art

[0002] Prior art semiconductor packages and methods for forming semiconductor packages are deficient, resulting in, for example, excessively high costs, reduced reliability, relatively low performance, or excessively large package sizes. Additional limitations and disadvantages of conventional and traditional methods will become apparent to those skilled in the art by comparing such methods with the present disclosure and referring to the accompanying drawings. Summary of the Invention

[0003] In one example, an electronic device structure includes a substrate having a conductive structure; an electronic device coupled to the substrate; and a first conductive wire structure coupled to the conductive structure in at least three locations, wherein the first conductive wire structure is located above at least two electronic devices; and the first conductive wire structure includes a continuous single conductive wire structure.

[0004] In the example, the substrate includes: a top surface; and a bottom surface, the bottom surface being opposite to the top surface; the conductive structure is adjacent to the top surface; the electronic device includes: a first electronic device, the first electronic device being positioned adjacent to the top surface at a first position; and a second electronic device, the second electronic device being positioned adjacent to the top surface at a second position laterally spaced apart from the first electronic device; and the first wire structure includes: a first bonding structure, the first bonding structure being connected to a first portion of the conductive structure; a second bonding structure, the second bonding structure being connected to a second portion of the conductive structure; a third bonding structure, the third bonding structure being connected to a third portion of the conductive structure; a first wire portion, the first wire portion being interconnected between the first bonding structure and the second bonding structure and being positioned to overlie the first electronic device; and a second wire portion, the second wire portion being interconnected between the second bonding structure and the third bonding structure and being positioned to overlie the second electronic device.

[0005] In the example, the first portion of the conductive structure includes a first conductive pad; the second portion of the conductive structure includes a second conductive pad; the third portion of the conductive structure includes a third conductive pad; the first electronic device is inserted between the first conductive pad and the second conductive pad; the second electronic device is inserted between the second conductive pad and the third conductive pad; and the second bonding structure is of a different type from the first bonding structure.

[0006] In the example, the conductive structure further includes: a fourth conductive pad, the fourth conductive pad being close to the first conductive pad; a fifth conductive pad, the fifth conductive pad being close to the second conductive pad; and a sixth conductive pad, the sixth conductive pad being close to the third conductive pad; the electronic device structure further includes a second wire structure, the second wire structure including: a fourth bonding structure, the fourth bonding structure connected to the fourth conductive pad; a fifth bonding structure, the fifth bonding structure connected to the fifth conductive pad; a sixth bonding structure, the sixth bonding structure connected to the sixth conductive pad; a third wire portion, the third wire portion interconnected between the fourth bonding structure and the fifth bonding structure and disposed above the first electronic device; and a fourth wire portion, the fourth wire portion interconnected between the fifth bonding structure and the sixth bonding structure and disposed above the second electronic device; the fifth bonding structure including a bonding structure different from the fourth bonding structure; the second wire structure including a second continuous single wire structure; and the electronic device structure further includes a shielding structure for the first electronic device, and the second electronic device includes the first wire structure and the second wire structure.

[0007] In the example, the second bonding structure includes a compression bonding structure, which includes: a first compression bonding portion, the first compression bonding portion having a first slope; a second compression bonding portion, the second compression bonding portion having a second slope; and a third compression bonding portion, the third compression bonding portion electrically and mechanically coupling the first compression portion to the second compression portion; in a cross-sectional view, the third compression bonding portion forms an obtuse angle with the second compression bonding portion; and the thickness of the third compression bonding portion is less than the thickness of the first compression portion and the second compression bonding portion.

[0008] In the example, the second wire portion of the first wire structure includes: a first portion connected to the second bonding structure, the first portion extending upward and away from the second bonding structure in a first direction; and a second portion connected to the first portion, the second portion bending back laterally toward the second bonding structure in a second direction.

[0009] In another example, an electronic device structure includes: a substrate, the substrate including: a top surface; a bottom surface, the bottom surface opposite to the top surface; and a conductive structure, the conductive structure formed adjacent to the top surface and including: a first conductive pad; a second conductive pad; and a third conductive pad; a first electronic device, the first electronic device being positioned adjacent to the top surface at a first position; a second electronic device, the second electronic device being positioned adjacent to the top surface at a second position laterally spaced apart from the first electronic device, wherein: the first electronic device is interposed between the first conductive pad and the second conductive pad; and the second electronic device is interposed between the second conductive pad and the third conductive pad. between three conductive pads; and a first conductive wire structure, the first conductive wire structure comprising: a first bonding structure, the first bonding structure being connected to the first conductive pad; a second bonding structure, the second bonding structure being connected to the second conductive pad; a third bonding structure, the third bonding structure being connected to the third conductive pad; a first conductive wire portion, the first conductive wire portion being interconnected between the first bonding structure and the second bonding structure and being arranged to cover the first electronic device; and a second conductive wire portion, the second conductive wire portion being interconnected between the second bonding structure and the third bonding structure and being arranged to cover the second electronic device, wherein the first conductive wire structure comprises a continuous single conductive wire structure.

[0010] In the other example, the second bonding structure includes a different bonding type than the first bonding structure.

[0011] In the other instance, the second bonding structure includes a compression bonding structure, which includes: a first compression bonding portion, the first compression bonding portion having a first width and a first slope; a second compression bonding portion, the second compression bonding portion having a second width and a second slope; and a third compression bonding portion, the third compression bonding portion electrically and mechanically coupling the first compression bonding portion to the second compression bonding portion.

[0012] In the other example, the thickness of the third compression bond portion is less than the thickness of the first compression bond portion and the second compression bond portion.

[0013] In the further example, the first width is greater than the second width.

[0014] In the other example, the conductive structure further includes: a fourth conductive pad, the fourth conductive pad is close to the first conductive pad; a fifth conductive pad, the fifth conductive pad is close to the second conductive pad; and a sixth conductive pad, the sixth conductive pad is close to the third conductive pad; the electronic device structure further includes a second conductive wire structure, the second conductive wire structure includes: a fourth bonding structure, the fourth bonding structure is connected to the fourth conductive pad; a fifth bonding structure, the fifth bonding structure is connected to the fifth conductive pad; a sixth bonding structure, the sixth bonding structure is connected to the sixth conductive pad; a third conductive wire portion, The third wire portion is interconnected between the fourth bonding structure and the fifth bonding structure and is arranged to cover the first electronic device; and a fourth wire portion, the fourth wire portion is interconnected between the fifth bonding structure and the sixth bonding structure and is arranged to cover the second electronic device, the fifth bonding structure includes a bonding type different from the fourth bonding structure; the second wire structure includes a second continuous single wire structure; and the electronic device structure further includes a shielding structure for the first electronic device and the second electronic device, the shielding structure including the first wire structure and the second wire structure.

[0015] In the other example, the second wire portion of the first wire structure includes: a first portion connected to the second bonding structure, the first portion extending upward and away from the second bonding structure in a first direction; and a second portion connected to the first portion, the second portion bending back laterally toward the second bonding structure in a second direction.

[0016] In the other example, the electronic device structure further includes an encapsulation material disposed to cover the top surface of the substrate, the first electronic device, the second electronic device, and at least a portion of the first conductive line structure.

[0017] In the other example, a portion of the first conductive line structure is exposed outside a top portion of the encapsulant.

[0018] In the further example, the first bonding structure comprises a ball bonding structure; and the second bonding structure comprises a compression bonding structure.

[0019] In yet another example, a method of forming an electronic device structure includes: providing a substrate, the substrate including: a top surface; a bottom surface, the bottom surface opposite the top surface; and a conductive structure, the conductive structure formed adjacent to the top surface and including: a first conductive pad; a second conductive pad; and a third conductive pad; providing a first electronic device, the first electronic device adjacent to the top surface at a first position; providing a second electronic device, the second electronic device adjacent to the top surface at a second position laterally spaced apart from the first electronic device, wherein: the first electronic device is inserted between the first conductive pad and the second conductive pad; and the second electronic device is inserted between the second conductive pad and the third conductive pad. three conductive pads; and providing a first conductive wire structure, the first conductive wire structure including: a first bonding structure, the first bonding structure connected to the first conductive pad; a second bonding structure, the second bonding structure connected to the second conductive pad; a third bonding structure, the third bonding structure connected to the third conductive pad; a first conductive wire portion, the first conductive wire portion is interconnected between the first bonding structure and the second bonding structure and is arranged to cover the first electronic device; and a second conductive wire portion, the second conductive wire portion is interconnected between the second bonding structure and the third bonding structure and is arranged to cover the second electronic device, wherein the first conductive wire structure includes a continuous single conductive wire structure.

[0020] In the further example, providing the first conductive line structure includes providing the second bonding structure by compression bonding the first conductive line structure to the second conductive pad, so that the second bonding structure includes a compression bonding structure having a first compression bonding portion and a second compression bonding portion electrically and mechanically connected by a third compression bonding portion, wherein: the first compression bonding portion includes a first width and a first slope; the second compression bonding portion includes a second width and a second slope; the first width is different from the second width; and the first slope is different from the second slope.

[0021] In the further example, the method further includes providing an encapsulation material disposed to cover the top surface of the substrate, the first electronic device, the second electronic device, and at least a portion of the first conductive structure.

[0022] In the further example, providing the first wire structure includes: providing the first bonding structure including a ball bonding structure; providing the second bonding structure including a compression bonding structure; and providing the third bonding structure including a stitch bonding structure; providing the compression bonding structure includes: providing a first compression bonding portion; providing a second compression bonding portion; providing a third compression bonding portion, wherein the third compression bonding portion electrically and mechanically couples the first compression bonding portion to the second compression bonding portion; the third compression bonding portion is thinner than the first compression bonding portion and the second compression bonding portion; and in a cross-sectional view, the third compression bonding portion forms an obtuse angle with the second compression bonding portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A cross-sectional view of an example semiconductor device is shown.

[0024] Figures 2A to 2F A cross-sectional view of an example method for fabricating an example semiconductor device is shown.

[0025] Figure 3A Shown Shown Figure 2C FIG. 1 is a perspective view of a case where the conductor structure includes a conductor cage.

[0026] Figure 3B and 3C A perspective view and a plan view are shown, respectively, of an example conductive line structure on a conductive layer.

[0027] Figure 3D A cross-sectional view illustrating the case where compression bonding is performed through a capillary is shown.

[0028] Figure 4 A cross-sectional view of another example semiconductor device is shown.

[0029] Figure 5A and 5B A cross-sectional view of an example method for fabricating another example semiconductor device is shown. DETAILED DESCRIPTION

[0030] The following discussion provides various examples of semiconductor devices and methods of manufacturing semiconductor devices. Such examples are non-limiting, and the scope of the appended claims should not be limited to the specific examples disclosed. In the following discussion, the terms "example" and "for example" are non-limiting.

[0031] The accompanying drawings illustrate the general constructional approach, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the present disclosure. In addition, the elements in the accompanying drawings are not necessarily drawn to scale. For example, the dimensions of some of the elements in the accompanying drawings may be exaggerated relative to other elements to help improve understanding of the examples discussed in this disclosure. The same reference numerals in different drawings represent the same elements.

[0032] The term “and / or” includes any single item or any combination of items in the list connected by “and / or.” As used in this disclosure, singular forms are intended to include plural forms as well, unless the context clearly indicates otherwise.

[0033] The terms “comprises,” “comprising,” “includes,” and / or “including” are “open” terms and specify the presence of recited features, but do not preclude the presence or addition of one or more other features.

[0034] The terms "first," "second," etc. may be used herein to describe various elements, and these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, for example, a first element discussed in this disclosure could be referred to as a second element without departing from the teachings of this disclosure.

[0035] Unless otherwise specified, the term "coupled" can be used to describe two elements that are in direct contact with each other or to describe two elements that are indirectly connected through one or more other elements. For example, if element A is coupled to element B, element A can be in direct contact with element B or indirectly connected to element B through an intermediate element C. Similarly, the terms "above" or "on" can be used to describe two elements that are in direct contact with each other or to describe two elements that are indirectly connected through one or more other elements. It should be further understood that the examples appropriately illustrated and described below can have examples and / or can be practiced without any elements that are not specifically disclosed herein.

[0036] Among other features, the present description includes a packaged electronic device structure and associated methods, the packaged electronic device structure comprising one or more wire structures attached to a substrate. In some instances, the wire structure comprises a continuous single wire structure overlying a pair of electronic devices, the continuous single wire structure being connectable to the substrate. In some instances, the wire structure is connected to a first conductive pad with a first bonding structure, extends to overlie the first electronic device, is connected to a second conductive pad with a second bonding structure, extends to overlie the second electronic device, and is connected to a third conductive pad with a third bonding structure. In some instances, the second bonding structure comprises a stitch bonding structure or a compression bonding structure that facilitates placement of the first electronic device closer to the second electronic device. In some instances, the wire structure is configured with a cage or shielding structure to reduce the effects of, for example, electromagnetic interference to or from the packaged electronic devices. Among other things, the configuration of the wire structure reduces substrate size requirements and saves manufacturing costs.

[0037] More specifically, in one example, an electronic device structure includes a substrate having a conductive structure. An electronic device is coupled to the substrate. A first conductive structure is connected to the conductive structure in at least three locations. The first conductive structure is positioned above at least two electronic devices and comprises a continuous single conductive structure. In some examples, one or more of the electronic devices comprises a semiconductor device. In other examples, at least one of the electronic devices is a flip chip attached to the substrate.

[0038] In another example, an electronic device structure includes a substrate having a top surface, a bottom surface opposite the top surface, and a conductive structure formed adjacent to the top surface. A first electronic device is positioned adjacent to the top surface at a first position, and a second electronic device is positioned adjacent to the top surface at a second position laterally spaced apart from the first electronic device. The first conductive structure includes: a first bonding structure connected to a first portion of the conductive structure; a second bonding structure connected to a second portion of the conductive structure; a third bonding structure connected to a third portion of the conductive structure; a first conductive portion interconnected between the first bonding structure and the second bonding structure and positioned to overlie the first electronic device; and a second conductive portion interconnected between the second bonding structure and the third bonding structure and positioned to overlie the second electronic device. The first conductive structure includes a continuous single conductive structure. In some examples, an encapsulant can be positioned to cover the top surface of the substrate, the first electronic device, the second electronic device, and at least a portion of the first conductive structure.

[0039] In another example, an electronic device structure includes a substrate having a top surface, a bottom surface opposite the top surface, and a conductive structure formed adjacent to the top surface. The conductive structure includes a first conductive pad, a second conductive pad, and a third conductive pad. A first electronic device is positioned adjacent to the top surface at a first position, and a second electronic device is positioned adjacent to the top surface at a second position laterally spaced apart from the first electronic device. In some examples, the first electronic device is interposed between the first conductive pad and the second conductive pad, and the second electronic device is interposed between the second conductive pad and the third conductive pad. The first wire structure includes: a first bonding structure connected to the first conductive pad; a second bonding structure connected to the second conductive pad; a third bonding structure connected to the third conductive pad; a first wire portion interconnected between the first bonding structure and the second bonding structure and positioned over the first electronic device; and a second wire portion interconnected between the second bonding structure and the third bonding structure and positioned over the second electronic device, wherein the first wire structure includes a continuous single wire structure. In some examples, the second bonding structure includes a bonding structure different from one or more of the first bonding structure or the third bonding structure.

[0040] In yet another example, a method of forming an electronic device structure includes providing a substrate having a top surface, a bottom surface opposite the top surface, and a conductive structure formed adjacent to the top surface, wherein the conductive structure includes a first conductive pad, a second conductive pad, and a third conductive pad. The method includes providing a first electronic device adjacent to the top surface at a first position and a second electronic device adjacent to the top surface at a second position laterally spaced apart from the first electronic device. In some examples, the first electronic device is interposed between the first conductive pad and the second conductive pad, and the second electronic device is interposed between the second conductive pad and the third conductive pad. The method includes providing a first wire structure, the first wire structure comprising: a first bonding structure connected to the first conductive pad; a second bonding structure connected to the second conductive pad; a third bonding structure connected to the third conductive pad; a first wire portion interconnected between the first bonding structure and the second bonding structure and positioned over the first electronic device; and a second wire portion interconnected between the second bonding structure and the third bonding structure and positioned over the second electronic device, wherein the first wire structure comprises a continuous single wire structure. In other examples, the second bonding structure comprises a bonding structure different from one or more of the first bonding structure or the third bonding structure.

[0041] Other examples are included in the present disclosure. Such examples can be found in the drawings, in the claims, and / or in the description of the present disclosure.

[0042] Figure 1 A cross-sectional view of an example of a packaged electronic device structure or electronic device structure, such as a semiconductor device or semiconductor device structure 100, is shown. Figure 1 In the example shown in , the semiconductor device 100 may include a substrate 110 , an electronic device 120 , a conductive line structure 130 , an encapsulation material 180 , and an interconnect 190 .

[0043] Substrate 110 may include a dielectric structure 111 having one or more dielectric layers and a conductive structure having one or more conductive layers 112, 113, and 114. Electronic device 120 may include a plurality of electronic devices, for example, at least two electronic devices 121 and 122. In addition, electronic devices 121 and 122 may include terminals 121a and 122a and interconnects 121b and 122b electrically connected to terminals 121a and 122a. Conductive structure 130 may include conductive wires. Conductive structure 130 may individually define a plurality of electronic devices. Encapsulation material 180 may cover substrate 110, electronic device 120, and conductive structure 130. Interconnect 190 may be positioned on the surface of substrate 110.

[0044] Substrate 110, conductive structure 130, encapsulant 180, and interconnect 190 may be referred to as semiconductor package 101 or package 101. Semiconductor package 101 may protect multiple electronic devices 120 from exposure to external elements and / or environmental exposure. In addition, semiconductor package 101 may provide electrical connections between external components and electronic devices 120.

[0045] Figures 2A to 2F A cross-sectional view of an example method for fabricating an example semiconductor device 100 is shown. Figure 2A Semiconductor device 100 is shown in an initial stage of fabrication.

[0046] exist Figure 2A In the example shown in FIG, substrate 110 can be substantially planar. In addition, substrate 110 can include a dielectric structure 111 and a conductive structure having a conductive layer 112 formed at a top surface 111a of dielectric structure 111, a conductive layer 113 formed at a bottom surface 111b of dielectric structure 111, and one or more conductive layers 114 that electrically connect conductive layer 112 to conductive layer 113 while passing through dielectric structure 111. In some examples, conductive layer 112 and / or conductive layer 113 can include or be referred to as a trace, pad, circuit pattern, wiring pattern, or ground, and one or more conductive layers 114 can include or be referred to as a conductive via or conductive path. In the same or other examples, conductive layer 114 can be part of the same layer as either conductive layer 112 or conductive layer 113. Although only two conductive layers 112 and 113 and one conductive layer 114 are shown in substrate 110, this is not a limitation of the present disclosure. In other examples, more than three conductive layers 112 and 113 and more than two conductive layers 114 may be formed on the dielectric layer 111 .

[0047] The dielectric structure 111 can be substantially planar. In some instances, the dielectric structure 111 can include more than one or two dielectric layers. The dielectric structure 111 can include an electrically insulating material, including, for example, Si3N4, SiO2, SiON, polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), bismaleimide triazine (BT), epoxy resin, phenolic resin, silicone resin or acrylate polymer. In some instances, the dielectric structure 111 can include one or more core layers (e.g., glass fiber) to improve rigidity, but there may be other instances in which one or more such core layers are omitted. In some instances, the dielectric structure 111 can include or be referred to as, for example, an insulating structure, a passivation structure or a protective structure. The thickness of the dielectric structure 111 can be in the range of about 10 microns to about 500 microns. Dielectric structure 111 may provide structural integrity to substrate 110 and / or may provide insulation between portions of conductive layers 112 and 113 positioned on dielectric structure 111 and conductive layer 114 positioned within dielectric structure 111 , as desired.

[0048] Conductive layers 112 and 113 may include or be referred to as conductive pads, micropads, bonding pads, or grounds. In some examples, conductive pad 112 may be formed to have a height from top surface 111 a of dielectric structure 111. In some examples, conductive pad 113 may be formed to have a height from bottom surface 111 b of dielectric structure 111.

[0049] In addition, conductive layers 112 and 113 may include a conductive material such as titanium, tungsten, titanium / tungsten, gold, silver, palladium, aluminum, copper, or nickel. The line thickness, line width, and / or line spacing (pitch) of conductive layers 112 and 113 may be in the range of about 30 microns to about 500 microns.

[0050] Conductive layer 114 may be referred to as a conductive via, a conductive path, or a conductive post. In some examples, conductive layer 114 may include a conductive material such as titanium, tungsten, titanium / tungsten, gold, silver, palladium, aluminum, copper, or nickel. The line thickness, line width, and / or line spacing (pitch) of conductive layer 114 may be in a range of approximately 30 microns to approximately 500 microns.

[0051] The substrate 110 may be referred to as an interconnect structure, a printed circuit board (PCB), a printed wiring board, a single-sided PCB, a double-sided PCB, a multi-layer PCB, a through-hole PCB, a non-through-hole PCB, a rigid PCB, a flexible PCB, a paper phenol PCB, a glass epoxy PCB, a polyimide PCB, a polyester PCB, a molded plastic PCB, a ceramic PCB, an etched foil process PCB, an additive process PCB, an accumulation PCB, or a pre-molded lead frame. For example, when the substrate 110 is an accumulation structure, a carrier may be provided, and a dielectric layer and a conductive layer may be formed without using a core (e.g., fiberglass) layer, and the dielectric layer and the conductive layer may be alternately stacked on the carrier. In some instances, the substrate 110 may be a lead frame comprising only a conductive layer without a dielectric layer or a molding material. The thickness of the substrate 110 may be in the range of about 50 microns to about 500 microns.

[0052] Figure 2B The semiconductor device 100 is shown in a later stage of manufacture. Figure 2B In the example shown in , electronic devices 121 and 122 may be electrically connected to conductive pads 112 of substrate 110 .

[0053] In some examples, pick and place equipment can pick up electronic devices 121 and 122 to place them on conductive pads 112 of substrate 110. In the same or other examples, electronic devices 121 and 122 can be electrically connected to substrate 110 by mass reflow, thermal compression, or laser assisted bonding.

[0054] The electronic devices 121 and 122 may be mounted on the substrate 110 spaced apart from each other. The substrate 110 may include at least one conductive pad 112b positioned between the electronic devices 121 and 122. In addition, the substrate 110 may further include at least one conductive pad 112a, 112c on either side of the length direction x in which the electronic devices 121 and 122 are sequentially arranged.

[0055] In some examples, electronic devices 121 and 122 may be referred to as semiconductor dies or semiconductor chips, or either electronic device may be a package containing one or more semiconductor dies. Furthermore, in some examples, electronic devices 121 and 122 may include at least one of a logic die, a microcontroller unit, a memory, a digital signal processor, a network processor, a power management unit, an audio processor, an RF circuit, a wireless baseband system on a chip processor, an application-specific integrated circuit, a sensor, or the like.

[0056] In some examples, electronic devices 121 and 122 may include an active region and an inactive region. Furthermore, in some examples, the active region may be positioned facing substrate 110. Furthermore, in some examples, the active region may include terminals 121 a and 122 a. In some examples, terminals 121 a and 122 a may be referred to as die pads, bonding pads, aluminum pads, conductive pillars, or conductive posts.

[0057] Additionally, terminals 121a and 122a can be connected to conductive pads 112 of substrate 110 using terminal couplers 121b and 122b, which may include or be referred to as low-melting-point materials 121b and 122b. There may be instances where terminal couplers 121b and 122b may be part of the respective terminals 121a and 122a. In one example, terminal couplers 121b and 122b may include one selected from the group consisting of Sn, Ag, Pb, Cu, Sn-Pb, Sn37-Pb, Sn95-Pb, Sn-Pb-Ag, Sn-Cu, Sn-Ag, Sn-Au, Sn-Bi, Sn-Ag-Cu, and equivalents. In some examples, terminal couplers 121b and 122b may be referred to as solder balls, solder bumps, solder caps, conductive balls, conductive bumps, or conductive caps. The terminals 121a and 122a of the electronic devices 121 and 122 and the conductive pads 112 of the substrate 110 may be electrically connected to each other through the terminal couplers 121b and 122b. The thickness of the terminals 121a and 122a and / or the terminal couplers 121b and 122b may be in the range of about 5 micrometers to about 500 micrometers.

[0058] Although the electronic devices 121 and 122 shown are of a flip-chip type, for example, the active region may be provided on a surface opposite to the surface facing the substrate 110. Here, the terminal couplers 121b and 122b may be referred to as wires. Alternatively, the electronic devices 121 and 122 may be mounted on the substrate 110 using an adhesive, and then the interconnects 121a and 122a may be electrically connected to the conductive pads 112 of the substrate 110 via the wires 121b and 122b.

[0059] Figure 2C The semiconductor device 100 is shown in a later stage of manufacture. Figure 2C In the example shown in FIG, the conductive line structure 130 may be electrically connected to the corresponding conductive pads 112 a, 112 b, and 112 c of the substrate 110 .

[0060] Conductive structure 130 can be electrically connected to conductive pads 112a, 112b, and 112c and can individually define at least opposing ends of each of electronic devices 121 and 122. In some examples, conductive structure 130 can cover electronic device 121 with a portion of conductive structure 130 electrically connected to both conductive layer 112a and conductive layer 112b, and can cover electronic device 122 with another portion of conductive structure 130 electrically connected to both conductive pad 112b and conductive pad 112c. Conductive structure 130 can include, for example, a conductive material such as gold, silver, aluminum, palladium, or copper. Furthermore, conductive structure 130 can be electrically connected to a ground or external ground of semiconductor device 100 through conductive pads 112a, 112b, and 112c.

[0061] The conductive line structure 130 may include a conductive line. The conductive line structure or conductive line 130 may include a conductive line portion 131 and a conductive line portion 132.

[0062] The conductive portion 131 can be spaced apart from the side portions and the top portion of the electronic device 121. In some examples, more than two conductive portions 131 can be formed to extend above the electronic device 121, wherein in some embodiments, such conductive portions 131 can be parallel to each other. The more than two conductive portions 131 can be referred to as a conductive cage or Faraday cage 151. The electronic device 121 can be positioned within the conductive cage 151. The conductive cage 151 can shield the electronic device 121 from electromagnetic interference.

[0063] The conductive portion 132 can be spaced apart from the side portions and the top portion of the electronic device 122. In some examples, more than two conductive portions 132 can be formed to extend above the electronic device 122, wherein in some embodiments, such conductive portions 132 can be parallel to each other. The more than two conductive portions 132 can be referred to as a shield, shielding structure, or a conductive cage 152, such as a Faraday cage. The electronic device 122 can be positioned within the conductive cage 152. The conductive cage 152 can shield the electronic device 122 from electromagnetic interference.

[0064] The conductive line structure 130 may further include wire bonds 135 , 136 , and 137 spaced apart from the electronic devices 121 and 122 and electrically connected to the conductive pads 112 a , 112 b , and 112 c .

[0065] In some examples, wire bonds 135, 136, and 137 and wire portions 131 and 132 can be sequentially arranged in the longitudinal direction x. In some examples, wire bond 135 can be bonded to conductive pad 112a, conductive portion 131 can be spaced apart from electronic device 121, wire bond 136 can be bonded to conductive pad 112b, wire portion 132 can be spaced apart from electronic device 122, and wire bond 137 can be bonded to conductive pad 112c.

[0066] Wire bonds 135, 136, and 137 may include different bond structure types. For example, wire bond 135 may first be ball bonded to conductive pad 112a, wire portion 131 may then be wrapped around and spaced apart from the side and top portions of electronic device 121, wire bond 136 may then be compression bonded to conductive pad 112b, wire portion 132 may then be wrapped around and spaced apart from the side and top portions of electronic device 122, and wire bond 137 may then be finally stitch bonded to conductive pad 112c using a bonding tool (e.g., a capillary).

[0067] In some examples, conductive pads 112a, 112b, and 112c may be referred to as bonding pads to be bonded to conductive line structure 130. Conductive line structure 130 may be a single or continuous conductive line integrally formed to be sequentially bonded to bonding pads 112a, 112b, and 112c in the described order. In some examples, conductive line structure 130 may be referred to as a conductive line or a bonding wire. The thickness of conductive line structure 130 may be in the range of approximately 15 microns to approximately 50 microns.

[0068] The electronic device 121 can be positioned within a wire cage 151 that includes a wire portion 131 and wire bonds 135 and 136. In some examples, the wire cage 151 can include more than two wire portions 131, which can be parallel to each other. The wire cage 151 can shield the electronic device 121 from electromagnetic interference. The electronic device 122 can be positioned within a wire cage 152 that includes a wire portion 132 and wire bonds 136 and 137. In some examples, the wire cage 152 can include more than two wire portions 132, which can be parallel to each other. The wire cage 152 can shield the electronic device 122 from electromagnetic interference. Figures 3A to 3D This conductive line structure 130 is described in more detail.

[0069] Figure 2D The semiconductor device 100 is shown in a later stage of manufacture. Figure 2DIn the example shown in , the encapsulant 180 can be formed to completely cover the top surface 110a of the substrate 110, the electronic device 120 and the wire structure 130. In some examples, the encapsulant 180 can be referred to as an epoxy molding compound, an epoxy molding resin or a sealant. In addition, in some examples, the encapsulant 180 can be referred to as a molding component, a sealing component, an encapsulation component, a protective component, a package or a main body component. In some examples, the encapsulant 180 can include but is not limited to an organic resin, an inorganic filler, a curing agent, a catalyst, a colorant and a flame retardant. The molding based on the encapsulant 180 can be formed by any of a variety of processes. In some examples, the encapsulant 180 can be formed by, but is not limited to, compression molding, transfer molding, liquid phase encapsulant molding, vacuum lamination, solder paste printing or film assisted molding. The thickness of the encapsulant 180 can be in the range of about 100 microns to about 1000 microns. The encapsulation material 180 may encapsulate the electronic device 120 and the conductive structure 130 , thereby protecting the electronic device 120 and the conductive structure 130 from external elements or environmental exposure.

[0070] Figure 2E The semiconductor device 100 is shown in a later stage of manufacture. Figure 2E In the illustrated example, the interconnect 190 may be formed on the conductive pad 113 exposed to the bottom surface 110 b of the substrate 110 .

[0071] Interconnect 190 may be electrically connected to the bottom surface of conductive pad 113. Interconnect 190 may be electrically connected to electronic device 120 through conductive layers 112, 113, and 114 of substrate 110. In addition, interconnect 190 may be electrically connected to conductive line structure 130 through conductive layers 112, 113, and 114, and interconnect 190 electrically connected to conductive line structure 130 may be electrically connected to ground.

[0072] In some examples, the interconnect 190 may include tin (Sn), silver (Ag), lead (Pb), copper (Cu), Sn-Pb, Sn37-Pb, Sn95-Pb, Sn-Pb-Ag, Sn-Cu, Sn-Ag, Sn-Au, Sn-Bi, or Sn-Ag-Cu. The interconnect 190 may be formed, for example, by a ball drop process, a screen printing process, or an electroplating process. In some examples, the interconnect 190 may be formed by forming a conductive material including solder on the bottom surface of the conductive pad 113 of the substrate 110 using a ball drop process, followed by a reflow process. At this stage, the bottom surface 110b of the substrate 110 may be positioned facing upward. The interconnect 190 may be referred to as a conductive ball (e.g., a solder ball), a conductive pillar (e.g., a copper pillar), or a conductive post with a solder cap on a copper pillar. The thickness of the interconnect 190 may be in the range of about 80 microns to about 500 microns.

[0073] Figure 2F The semiconductor device 100 is shown in a later stage of manufacture. Figure 2F In the example shown in , a plurality of semiconductor devices may be divided into individual semiconductor devices 100 .

[0074] Encapsulation material 180 and substrate 110 can be separated into discrete semiconductor devices 100 including at least two electronic devices 121 and 122. For example, encapsulation material 180 and substrate 110 can be separated using a separation tool such as a diamond wheel or a laser beam, thereby completing discrete semiconductor devices 100. The completed semiconductor device 100 may include substrate 110, at least two electronic devices 121 and 122, a conductive line structure 130 that shields electromagnetic interference by defining at least two electronic devices 121 and 122 using conductive line cages 151 and 152, encapsulation material 180 that protects electronic devices 120 and conductive line structure 130 from exposure to the external environment, and interconnects 190 that serve as input / output terminals.

[0075] Figure 3A Shown Figure 2C The conductor structure shown in FIG. 1 includes a perspective view of a conductor cage. Figure 3A In the example shown in FIG, the wire structure 130 may include wire cages 151 and 152. Wire cage 151 may include, for example, a plurality of wire sections 131 that cover electronic device 121, thereby shielding against electromagnetic interference to or from electronic device 121. Wire cage 152 may include, for example, a plurality of wire sections 132 that are parallel to each other and cover electronic device 122, thereby shielding against electromagnetic interference to or from electronic device 122. Although two wire sections are shown per wire cage, this is not a limitation of the present disclosure. In other examples, three or more wire sections may be provided per wire cage.

[0076] In some examples, the spacing between the wire portions 131 and 132 may be determined according to the wavelength of the electromagnetic wave to be cut off. For example, the spacing between the wire portions 131 and 132 may be smaller than the wavelength of the electromagnetic wave to be cut off.

[0077] In some examples, wire bonding of the wire structure 130 can be performed using a bonding tool having a capillary, a wire clamp, and a wire spool. Wire bond 135 can be first bonded to conductive pad 112a using a capillary, which can generally have a ball bond shape. In some examples, wire portion 131 can overlap electronic device 121 and / or be spaced apart from electronic device 121 by the capillary, which can form a loop height measured from the surface of substrate 110.

[0078] In some examples, wire bond 136 can be bonded to conductive pad 112b via capillary compression bonding, which may exhibit asymmetric slip. In some examples, the wire clamp is not closed when the capillary is lifted from conductive pad 112b. For example, a tailing operation is not performed when the capillary is lifted from conductive pad 112b. Thus, a pair of compression bonded portions can be connected to each other without cutting.

[0079] In some instances, the wire portion 132 can cover the electronic device 121 and / or be separated from the electronic device 122 by a capillary, which can form a loop height measured from the surface of the substrate 110. In some instances, the wire bond 137 can be ultimately stitch bonded to the conductive pad 112c by the capillary, which may have slippage. In some instances, the wire clamp is closed when the capillary rises from the conductive pad 112c. For example, a tailing operation is performed when the capillary is lifted from the conductive pad 112c. Thus, the stitch bond portion and the tail bond portion can be disconnected. In some instances, the stitch bond portion of the wire bond 137 can remain on the conductive pad 112c, while the tail bond portion of the wire bond 137 can be removed from the conductive pad 112c.

[0080] In this manner, conductive structure or single wire 130 can provide continuous wire portions 131 and 132, while the shapes of wire bonds 135, 136, and / or 137 can differ from one another. In some examples, wire bond 135 can have approximately the shape of a ball bond, wire bond 136 can have approximately the shape of a compression bond, and wire bond 137 can have approximately the shape of a stitch bond.

[0081] In this manner, mutually connected compression bonding portions are formed without forming ball bonding portions and stitch bonding portions between the electronic device 121 and the electronic device 122 , thereby allowing a space required between the electronic device 121 and the electronic device 122 to be reduced.

[0082] For example, for SiP (system-in-package) technology, space may be an important factor because more electronic devices and / or components can be loaded onto a limited area in substrate 110. For example, if stitch bonds and ball bonds are to be formed in conductive pad 112 b between electronic device 121 and electronic device 122 to manufacture a wire cage, space will be necessary for stitch bond formation, for ball bond formation, and also for capillary movement (including forward movement for loop initiation and backward movement for stitch bonds after ball bond formation).

[0083] In contrast, the continuous compression bonding proposed in the present disclosure can reduce the space between the electronic devices 121 and 122 because both stitch bonding and ball bonding do not need to be formed between the electronic devices 121 and 122 .

[0084] Figure 3B and 3C A perspective view and a plan view are shown, respectively, of an example conductive line structure on a conductive layer. Figure 3D A cross-sectional view showing how compression bonding is performed through a capillary is presented.

[0085] exist Figures 3B to 3D In the example shown in FIG, wire bond 136 may include compression bond portions 136a and 136b. In some examples, compression bond portion 136a may be primarily formed by lower end outer surface 301a of capillary tip 301, and compression bond portion 136b may be primarily formed by lower end inner surface 301b of capillary tip 301. In some examples, compression bond portions 136a and 136b may be electrically and mechanically coupled to each other, compression bond portion 136a may have a low slope surface 136c, and compression bond portion 136b may have a steep slope surface 136d.

[0086] Furthermore, the width and / or area of ​​the compression key portion 136a may be wider than the width and / or area of ​​the compression key portion 136b. This may be due to the shape difference between the lower end outer surface 301a and the lower end inner surface 301b of the capillary tip 301.

[0087] In some examples, the thickness of the boundary portion 136c between the compression key portion 136a and the compression key portion 136b may be relatively smaller than the thickness of other peripheral portions (e.g., the compression key portions 136a and 136b). This may be because the lower portion between the lower end outer surface 301a and the lower end inner surface 301b of the capillary tip 301 may protrude at an obtuse angle. Although the boundary portion 136c is Figure 3D136a and 136b. In some embodiments, the boundary portion 136c is formed into a circular shape. Therefore, in some instances, the boundary portion 136c does not need to be clearly distinguished between the compression bond portion 136a and the compression bond portion 136b. Usually, the boundary portion 136c can depend on the shape of the lower portion between the lower end outer surface 301a and the lower end inner surface 301b of the capillary tip 301. In some instances, the wire portion 132 is included in a first direction and is laterally connected to the compression bond portion 136b and extends away from the compression bond 136. The wire portion 132 is included in the wire portion 132 and is bent again to extend on the electronic device 122 before the second side is bent back laterally towards the compression bond 136. In some instances, in a side view, the first portion 132a and the second portion 132b form an S-shaped shape. This configuration provides, for example, a wire portion 132 whose shape promotes closer spacing between electronic devices 121 and 122 .

[0088] Figure 4 A cross-sectional view of another example semiconductor device 200 is shown. Due to process differences, Figure 4 The semiconductor device 200 shown in FIG. Figure 1 The semiconductor device 100 shown in FIG. 1 is slightly different. Figure 4 In the example shown in FIG. 2 , the semiconductor device 200 may include a substrate 110 , an electronic device 120 , a conductive line structure 130 , an encapsulation material 280 , and an interconnect 190 .

[0089] Encapsulant 280 may cover the top surface of substrate 110, electronic device 120, and a portion of conductive line structure 130. Here, a portion of conductive line structure 130 may be exposed at the top portion of encapsulant 280. In some examples, each partial region of conductive line portions 131 and 132 may be exposed to the outside through the top portion of encapsulant 280. In some examples, each of the other regions of conductive line portions 131 and 132 may still be positioned within encapsulant 280. In this manner, semiconductor device 200 according to the present disclosure may have a relatively small thickness.

[0090] Figure 5A and 5B A cross-sectional view of an example method for fabricating another example semiconductor device 200 is shown.

[0091] Figure 5A The semiconductor device 200 is shown in a later stage of manufacturing, the following stages are similar to those described above for Figures 2A-2C The stages are similar to those described. Figure 5AIn the example shown in FIG, encapsulant 280 can be formed to completely cover the top surface 110a of substrate 110, electronic device 120, and conductive structure 130. In some examples, the top portion of encapsulant 280 can be removed by grinding or etching, thereby exposing the top portion 130x of conductive structure 130 to the outside. For example, the top portion 130x of conductive structure 130 can be positioned at the topmost portion of conductive portions 131 and 132 or conductive cages 151 and 152. The top portion 130x of conductive structure 130 can be exposed to the outside through the top surface 280a of encapsulant 280. The top surface 280a of encapsulant 280 can be removed by grinding or etching to expose the top portion 130x of conductive structure 130 to the outside, thereby reducing the overall thickness of semiconductor device 200. In addition, conductive structure 130 can be exposed to the outside of encapsulant 280, thereby improving the heat radiation efficiency of semiconductor device 200. The thickness of the encapsulant 280 may be in a range of about 100 microns to about 1000 microns.

[0092] Figure 5B The semiconductor device 200 is shown in a later stage of manufacture. Figure 5B In the example shown in FIG, a plurality of semiconductor devices can be separated into individual semiconductor devices 200. Encapsulation material 280 and substrate 110 can be separated into discrete semiconductor devices 200 including at least two electronic devices 121 and 122. For example, encapsulation material 280 and substrate 110 can be separated using a separation tool such as a diamond wheel or a laser beam, thereby completing discrete semiconductor devices 200.

[0093] In summary, a packaged electronic device structure and associated methods have been described that include a conductor structure bonded to a substrate and positioned to be located above at least two electronic devices. In some instances, the conductor structure includes a continuous single conductor structure bonded to a first conductive pad with a first bonding structure, extending to be located above the first electronic device, bonded to a second conductive pad with a second bonding structure, extending to be located above the second electronic device, and bonded to a third conductive pad with a third bonding structure. The second bonding structure is different from the first bonding structure and, in some instances, includes a compression bonding structure. The second bonding structure is configured such that the spacing between the first electronic device and the second electronic device can be reduced, thereby saving substrate space. This supports, among other things, smaller and more cost-effective packaged electronic devices.

[0094] Although the subject matter of the present disclosure has been described with specific example steps and example embodiments, the above drawings and description thereof depict only typical examples of the subject matter and are therefore not to be considered as limiting the scope thereof. Obviously, many alternatives and variations will be apparent to those skilled in the art.

[0095] As reflected in the claims below, inventive aspects may comprise fewer than all features of a single aforementioned disclosed embodiment. The claims expressed below are therefore hereby expressly incorporated into this detailed description, with each claim independently representing a separate embodiment of the present invention. Furthermore, although some embodiments described herein may include some, but not other, features included in other embodiments, combinations of features from different embodiments are intended to be within the scope of the present invention and are intended to form distinct embodiments as would be understood by those skilled in the art.

Claims

1. An electronic device structure, comprising: a substrate having a conductive structure; a first electronic device and a second electronic device, wherein the first electronic device and the second electronic device are coupled to the substrate; as well as a first conductive structure coupled to the conductive structure in at least three locations, wherein: The first electronic device and the second electronic device are arranged laterally spaced apart; The conductive structure includes a first conductive trace, a second conductive trace, and a third conductive trace; the second conductive trace being located between the first conductive trace and the third conductive trace; The first conductive wire structure is located above the first electronic device and the second electronic device; The first conductor structure is a continuous single conductor structure; The first conductive line structure has a first conductive line portion above the first electronic device; The first conductor structure includes: a first bonding structure connected to the first conductive trace; a second bonding structure connected to the second conductive trace, wherein the first conductive trace portion is interconnected between the first bonding structure and the second bonding structure and is disposed overlying the first electronic device; a third bonding structure connected to the third conductive trace; and a second conductive line portion interconnected between the second bonding structure and the third bonding structure and disposed overlying the second electronic device; and The first conductive line portion has a maximum height above the substrate at a position other than a center of the first electronic device.

2. The electronic device structure according to claim 1, wherein: The substrate comprises: a top surface; and a bottom surface, the bottom surface opposite the top surface; The conductive structure is adjacent to the top surface; the first electronic device, the first electronic device being adjacent to the top surface at a first location; and The second electronic device is adjacent to the top surface at a second location laterally spaced apart from the first electronic device.

3. The electronic device structure according to claim 1, wherein: The first electronic device is interposed between the first conductive trace and the second conductive trace; the second electronic device being interposed between the second conductive trace and the third conductive trace; and The second bonding structure is of a different type than the first bonding structure.

4. The electronic device structure according to claim 3, wherein: The conductive structure further comprises: a fourth conductive trace, the fourth conductive trace being proximate to the first conductive trace; a fifth conductive trace proximate to the second conductive trace; and a sixth conductive trace, the sixth conductive trace being proximate to the third conductive trace; The electronic device structure further includes a second conductive line structure, wherein the second conductive line structure includes: a fourth bonding structure connected to the fourth conductive trace; a fifth bonding structure connected to the fifth conductive trace; a sixth bonding structure connected to the sixth conductive trace; a third conductive line portion interconnected between the fourth bonding structure and the fifth bonding structure and disposed overlying the first electronic device; and a fourth conductive line portion interconnected between the fifth bonding structure and the sixth bonding structure and disposed overlying the second electronic device; The fifth bonding structure includes a bonding structure different from the fourth bonding structure; The second conductive line structure is a second continuous single conductive line structure; and The first conductive line structure and the second conductive line structure form a shielding structure for the first electronic device and the second electronic device.

5. The electronic device structure according to claim 1, wherein: The second bonding structure includes a compression bonding structure, and the compression bonding structure includes: a first compression bond portion having a first slope; a second compression bond portion having a second slope; and a third compression bond portion electrically and mechanically coupling the first compression bond portion to the second compression bond portion; In cross-sectional view, the third compression bond portion forms an obtuse angle with the second compression bond portion; and The thickness of the third compression bond portion is smaller than the thickness of the first compression bond portion and the second compression bond portion.

6. The electronic device structure according to claim 1, wherein: The second conductor portion of the first conductor structure comprises: a first portion connected to the second bond structure, the first portion extending in a first direction upward and away from the second bond structure; and A second portion is connected to the first portion, the second portion being bent back laterally in a second direction toward the second bonding structure.

7. An electronic device structure comprising: A substrate, comprising: top surface; a bottom surface opposite the top surface; and a conductive structure formed adjacent to the top surface and comprising: a first conductive trace; a second conductive trace; and a third conductive trace, wherein the second conductive trace is located between the first conductive trace and the third conductive trace; a first electronic device adjacent to the top surface at a first location; a second electronic device adjacent to the top surface at a second location laterally spaced from the first electronic device, wherein: The first electronic device is interposed between the first conductive trace and the second conductive trace; and the second electronic device being interposed between the second conductive trace and the third conductive trace; and A first conductive line structure, the first conductive line structure comprising: a first bonding structure connected to the first conductive trace; a second bonding structure connected to the second conductive trace; a third bonding structure connected to the third conductive trace; a first conductive line portion interconnected between the first bonding structure and the second bonding structure and disposed overlying the first electronic device; and A second wire portion, the second wire portion is interconnected between the second bonding structure and the third bonding structure and is arranged to cover the second electronic device, wherein the first wire structure is a continuous single wire structure, and wherein the first wire structure has a maximum height above the substrate at a position other than the center of the first electronic device.

8. The electronic device structure according to claim 7, wherein: The second bonding structure includes a different bonding type than the first bonding structure.

9. The electronic device structure according to claim 7, wherein: The second bonding structure includes a compression bonding structure, and the compression bonding structure includes: a first compression bond portion having a first width and a first slope; a second compression bond portion having a second width and a second slope; and A third compression bond portion electrically and mechanically couples the first compression bond portion to the second compression bond portion.

10. The electronic device structure according to claim 9, wherein: The thickness of the third compression bond portion is smaller than the thickness of the first compression bond portion and the second compression bond portion.

11. The electronic device structure according to claim 9, wherein: The first width is greater than the second width.

12. The electronic device structure according to claim 7, wherein: The conductive structure further comprises: a fourth conductive trace, the fourth conductive trace being proximate to the first conductive trace; a fifth conductive trace proximate to the second conductive trace; and a sixth conductive trace, the sixth conductive trace being proximate to the third conductive trace; The electronic device structure further includes a second conductive line structure, wherein the second conductive line structure includes: a fourth bonding structure connected to the fourth conductive trace; a fifth bonding structure connected to the fifth conductive trace; a sixth bonding structure connected to the sixth conductive trace; a third conductive line portion interconnected between the fourth bonding structure and the fifth bonding structure and disposed overlying the first electronic device; and a fourth conductive line portion interconnected between the fifth bonding structure and the sixth bonding structure and disposed overlying the second electronic device; The fifth bonding structure comprises a different bonding type than the fourth bonding structure; The second conductive line structure is a second continuous single conductive line structure; and The electronic device structure further includes a shielding structure for the first electronic device and the second electronic device, the shielding structure including the first conductive line structure and the second conductive line structure.

13. The electronic device structure of claim 7, wherein the second conductive portion of the first conductive structure comprises: a first portion connected to the second bonding structure, the first portion extending upward in a first direction and away from the second bonding structure; as well as A second portion is connected to the first portion, the second portion being bent back laterally in a second direction toward the second bonding structure.

14. The electronic device structure according to claim 7, further comprising: An encapsulant is disposed to cover the top surface of the substrate, the first electronic device, the second electronic device, and at least a portion of the first conductive structure.

15. The electronic device structure according to claim 14, wherein: A portion of the first conductive line structure is exposed outside the top portion of the encapsulant.

16. The electronic device structure according to claim 7, wherein: The first bonding structure comprises a ball bonding structure; and The second bonding structure includes a compression bonding structure.

17. A method of forming an electronic device structure, the method comprising: A substrate is provided, the substrate comprising: top surface; a bottom surface opposite the top surface; and a conductive structure formed adjacent to the top surface and comprising: a first conductive trace; a second conductive trace; and a third conductive trace, wherein the second conductive trace is located between the first conductive trace and the third conductive trace; providing a first electronic device adjacent to the top surface at a first position; providing a second electronic device adjacent to the top surface at a second location laterally spaced from the first electronic device, wherein: The first electronic device is interposed between the first conductive trace and the second conductive trace; and the second electronic device being interposed between the second conductive trace and the third conductive trace; and A first conductive line structure is provided, the first conductive line structure comprising: a first bonding structure connected to the first conductive trace; a second bonding structure connected to the second conductive trace; a third bonding structure connected to the third conductive trace; a first conductive line portion interconnected between the first bonding structure and the second bonding structure and disposed overlying the first electronic device; and a second conductive line portion interconnected between the second bonding structure and the third bonding structure and disposed overlying the second electronic device, wherein: The first conductive line structure is a continuous single conductive line structure; and The first conductive line portion has a maximum height above the substrate at a position other than a center of the first electronic device.

18. The method of claim 17, wherein providing the first conductive line structure comprises: providing the second bond structure by compression bonding the first conductive trace to the second conductive trace, such that the second bond structure comprises a compression bond structure having a first compression bond portion and a second compression bond portion electrically and mechanically connected by a third compression bond portion, wherein: The first compression bond portion comprises a first width and a first slope; the second compression bond portion comprising a second width and a second slope; The first width is different from the second width; and The first slope is different from the second slope.

19. The method of claim 17, further comprising providing an encapsulant disposed to cover the top surface of the substrate, the first electronic device, the second electronic device, and at least a portion of the first conductive structure.

20. The method of claim 17, wherein: Providing the first conductor structure includes: providing the first bonding structure comprising a ball bonding structure; providing the second bonding structure comprising a compressive bonding structure; and providing the third bonding structure comprising a stitch bonding structure; Providing the compression bonding structure includes: providing a first compression bond portion; providing a second compression bond portion; and providing a third compression bond portion that electrically and mechanically couples the first compression bond portion to the second compression bond portion; the third compression bond portion is thinner than the first compression bond portion and the second compression bond portion; and In a cross-sectional view, the third compression bond portion forms an obtuse angle with the second compression bond portion.

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