Substrate and method for manufacturing the same

Abstract

The present invention provides a substrate and a manufacturing method thereof, wherein the substrate comprises a ceramic core, a first adhesive layer, a barrier layer, and a second adhesive layer. The first adhesive layer covers the ceramic core and comprises silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the first adhesive layer has a first ratio. The barrier layer covers the first adhesive layer and comprises silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the barrier layer has a second ratio, and the second ratio is different from the first ratio. The second adhesive layer covers the barrier layer and comprises silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the second adhesive layer has a third ratio, and the third ratio is different from the second ratio.

Description

Technical Field

[0001] The present invention relates to semiconductor manufacturing technology, and in particular to a substrate and a manufacturing method thereof. Background Art

[0002] The semiconductor structure includes a substrate and an epitaxial layer on the substrate. Since the epitaxial layer and the substrate are made of different materials, the epitaxial layer is formed by a heterogeneous epitaxial growth process. Due to problems such as different lattice constants of the materials, this heterogeneous epitaxial growth process is prone to forming an epitaxial layer with defects, so further improvement of the substrate is required.

[0003] However, although these substrates generally meet the requirements, they are still not satisfactory in every aspect. For example, the substrate includes a multi-layer structure, and the use of a complex process to form the substrate not only increases the production cost, but also easily causes the substrate to have defects, thereby reducing the yield. Therefore, it is necessary to further improve the substrate and its manufacturing method to reduce the production cost and improve the yield and reliability. Summary of the invention

[0004] According to some embodiments of the present invention, a substrate is provided. The substrate includes a ceramic core; a first adhesive layer covering the ceramic core and including silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the first adhesive layer has a first ratio; a barrier layer covering the first adhesive layer and including silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the barrier layer has a second ratio, and the second ratio is different from the first ratio; and a second adhesive layer covering the barrier layer and including silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the second adhesive layer has a third ratio, and the third ratio is different from the second ratio.

[0005] In some embodiments, the first ratio and the third ratio are each independently in a range of 6:4 to 9:1.

[0006] In some embodiments, the second ratio is in a range of 1:9 to 4:6.

[0007] In some embodiments, a ratio of the thickness of the barrier layer to the thickness of the first adhesive layer or the thickness of the second adhesive layer is in a range of 3-6.

[0008] In some embodiments, the ceramic core includes one or any combination of aluminum nitride, gallium nitride, aluminum gallium nitride, silicon carbide, zinc oxide, and gallium oxide.

[0009] In some embodiments, the substrate further comprises an epitaxial layer disposed on the first side of the second adhesive layer and comprising a III-V semiconductor material; and a bonding layer disposed between the epitaxial layer and the second adhesive layer.

[0010] In some embodiments, the substrate further includes a filling layer disposed between the bonding layer and the second adhesive layer.

[0011] In some embodiments, the substrate further includes a conductive layer disposed on a second side of the second adhesive layer, wherein the second side is located opposite to the first side.

[0012] In some embodiments, a sidewall of the conductive layer is coplanar with a sidewall of a third side of the second adhesive layer, wherein the third side is located between the first side and the second side.

[0013] In some embodiments, the material of the conductive layer includes one or any combination of Ti, TiN, Co, Ni, Pt, Ta, TaN, and SiCr.

[0014] In some embodiments, the thickness of the conductive layer is to range.

[0015] According to some embodiments of the present disclosure, a method for manufacturing a substrate is provided. The method includes providing a ceramic core; and providing a silicon source, an oxygen source, and a nitrogen source during a deposition process to sequentially form a first adhesion layer covering the ceramic core, a barrier layer covering the first adhesion layer, and a second adhesion layer covering the barrier layer, wherein the atomic ratios of oxygen and nitrogen in the first adhesion layer, the barrier layer, and the second adhesion layer have a first ratio, a second ratio, and a third ratio, respectively, wherein the second ratio is different from the first ratio and the third ratio is different from the second ratio.

[0016] In some embodiments, the first ratio and the third ratio are each independently in a range of 6:4 to 9:1.

[0017] In some embodiments, the second ratio is in a range of 1:9 to 4:6.

[0018] In some embodiments, the oxygen source includes one or any combination of water vapor, oxygen, and ozone, the nitrogen source includes ammonia and / or nitrogen, and the deposition process includes adjusting the flow ratio of oxygen to nitrogen from 8:2 to 2:8 and then to 8:2.

[0019] In some embodiments, the deposition process includes a chemical vapor deposition process.

[0020] In some embodiments, the method further includes forming a bonding layer on a first side of the second adhesive layer; forming an epitaxial layer on the bonding layer; and forming a conductive layer on a second side of the second adhesive layer, wherein the second side is located opposite to the first side.

[0021] In some embodiments, a sidewall of the conductive layer is coplanar with a sidewall of a third side of the second adhesive layer, wherein the third side is located between the first side and the second side.

[0022] In some embodiments, the conductive layer includes one or any combination of Ti, TiN, Co, Ni, Pt, Ta, TaN, and SiCr.

[0023] In some embodiments, the method further comprises forming a filling layer before forming the bonding layer, wherein the filling layer comprises a multi-layer structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The following will be described in detail with reference to the accompanying drawings. It should be noted that, according to standard practice in the industry, various features are not drawn to scale and are only used for illustration. In fact, the size of the components may be arbitrarily enlarged or reduced to clearly show the features of the present invention.

[0025] Figure 1A to Figure 1B are cross-sectional schematic diagrams illustrating various stages of manufacturing a substrate according to some embodiments of the present invention;

[0026] Figure 2 2 are cross-sectional schematic diagrams illustrating substrates according to other embodiments of the present invention.

[0027] Reference numerals:

[0028] 100, 200 ~ base;

[0029] 102~Ceramic core;

[0030] 104~first adhesive layer;

[0031] 106~barrier layer;

[0032] 108~second adhesive layer;

[0033] 110~filling layer;

[0034] 112~joining layer;

[0035] 114~Single crystal layer;

[0036] 116~Epitaxial layer;

[0037] 118~conductive layer;

[0038] T1, T2, T3, T4~thickness. DETAILED DESCRIPTION

[0039] Some embodiments are summarized below so that those skilled in the art can more easily understand the present invention. However, these embodiments are only examples and are not intended to limit the present invention. It is understood that those skilled in the art can adjust the embodiments described below as needed, such as changing the process sequence and / or including more or fewer steps than described herein, and these adjustments do not exceed the scope of the present invention.

[0040] In addition, other elements may be added on the basis of the embodiments described below. For example, the description of "forming a second element on a first element" may include an embodiment in which the first element is in direct contact with the second element, and may also include an embodiment in which there are other elements between the first element and the second element so that the first element and the second element are not in direct contact, and the upper and lower relationship between the first element and the second element may change as the device is operated or used in different orientations. In addition, the present invention may repeat reference numbers and / or letters in different embodiments. This repetition is for simplicity and clarity, and is not used to indicate the relationship between the different embodiments discussed.

[0041] The following describes a substrate and a method for manufacturing the same according to some embodiments of the present invention. The substrate of the present invention comprises an adhesion layer and a barrier layer having silicon oxynitride, which can reduce process steps, thereby improving substrate yield and reducing production costs.

[0042] Figure 1A to Figure 1B 1 is a cross-sectional view showing various stages of manufacturing the substrate 100 according to some embodiments. Figure 1A As shown, the semiconductor device 100 includes a ceramic core 102. In some embodiments, the material of the ceramic core 102 includes aluminum nitride (AlN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), silicon carbide (SiC), zinc oxide (ZnO), gallium oxide (Ga2O3), or similar materials, or any combination thereof. In some embodiments, the thickness of the ceramic core 102 may be in the range of about 100 microns to about 1500 microns, such as about 700 microns to about 800 microns.

[0043] Then, according to some embodiments, a deposition process is performed to sequentially form a first adhesive layer 104 covering the ceramic core 102, a barrier layer 106 covering the first adhesive layer 104, and a second adhesive layer 108 covering the barrier layer 106. In some embodiments, the deposition process includes a chemical vapor deposition (CVD) process, such as a low pressure chemical vapor deposition (LPCVD) process.

[0044] During the deposition process, a silicon source, an oxygen source, and a nitrogen source are provided. For example, the silicon source may include silane (SiH4), tetraethylorthosilicate (TEOS), one of the similar materials, or any combination thereof. For example, the oxygen source may include water vapor (H2O), oxygen (O2), ozone (O3), one of the similar materials, or any combination thereof. For example, the nitrogen source may include ammonia (NH3), nitrogen (N2), one of the similar materials, or any combination thereof.

[0045] By adjusting the flow rate ratio of the oxygen source to the nitrogen source during the deposition process, a first adhesion layer 104, a barrier layer 106, and a second adhesion layer 108 including silicon oxynitride are formed, wherein the atomic number ratio of oxygen to nitrogen (oxygen atomic number: nitrogen atomic number) of the silicon oxynitride of the first adhesion layer 104 has a first ratio, the atomic number ratio of oxygen to nitrogen (oxygen atomic number: nitrogen atomic number) of the silicon oxynitride of the barrier layer 106 has a second ratio, and the atomic number ratio of oxygen to nitrogen (oxygen atomic number: nitrogen atomic number) of the silicon oxynitride of the second adhesion layer 108 has a third ratio, and the first ratio and the third ratio are different from the second ratio, and the third ratio can be the same as or different from the first ratio.

[0046] In some embodiments, when forming the first adhesive layer 104, oxygen is used as the oxygen source and nitrogen is used as the nitrogen source, and the flow ratio of oxygen to nitrogen is adjusted to about 8:2, so that the first ratio of the atomic number of oxygen and nitrogen in the silicon oxynitride of the first adhesive layer 104 is in the range of about 6:4 to about 9:1, for example, about 8:2. When different oxygen sources and nitrogen sources are selected, the flow ratio of the oxygen source and the nitrogen source will change with the number of oxygen atoms and nitrogen atoms contained in each. For example, in an embodiment using water vapor as the oxygen source and nitrogen as the nitrogen source, the flow ratio of water vapor to nitrogen is adjusted to about 16:2, so that the first ratio of the atomic number of oxygen and nitrogen in the silicon oxynitride of the first adhesive layer 104 is in the range of about 6:4 to about 9:1.

[0047] Since the number of oxygen atoms is higher than that of nitrogen atoms, the formed silicon oxynitride has better adhesion, which can provide adhesion between the subsequently deposited film layer and the ceramic core 102. In some embodiments, the thickness T1 of the first adhesion layer 104 is about to about range, for example, about to about According to some embodiments, the first adhesive layer 104 having a thickness within this range can make the film layer subsequently formed thereon less likely to fall off.

[0048] In some embodiments, when forming the barrier layer 106, oxygen is used as an oxygen source and nitrogen is used as a nitrogen source, and the flow rate ratio of oxygen to nitrogen is adjusted to about 2:8, so that the second ratio of the number of atoms of oxygen and nitrogen in the silicon oxynitride of the barrier layer 106 is in the range of about 1:9 to about 4:6, for example, about 2:8. As described above, the flow rate ratio of the oxygen source to the nitrogen source varies with the number of oxygen atoms and nitrogen atoms contained in each. Since the number of nitrogen atoms is higher than the number of oxygen atoms, the formed silicon oxynitride can block the material in the ceramic core 102 from diffusing outward and / or the material outside the barrier layer 106 from diffusing into the ceramic core 102, which may cause defects and reduce the reliability of the substrate 100.

[0049] In some embodiments, the thickness T2 of the barrier layer 106 is about to about range, for example, about to about According to some embodiments, the barrier layer 106 having this thickness range can prevent or minimize diffusion of materials. In some embodiments, the ratio of the thickness T2 of the barrier layer 106 to the thickness T1 of the first adhesive layer 104 is in the range of about 3 to about 6, for example, about 4 to about 5.

[0050] In some embodiments, when forming the second adhesion layer 108, oxygen is used as the oxygen source and nitrogen is used as the nitrogen source, and the flow rate ratio of oxygen to nitrogen is adjusted to about 8:2, so that the third ratio of the number of oxygen and nitrogen atoms of the silicon oxynitride of the second adhesion layer 108 is in the range of about 6:4 to about 9:1, for example, about 8:2. As described above, the flow rate ratio of the oxygen source to the nitrogen source will change with the number of oxygen atoms and nitrogen atoms contained in each. Since the number of oxygen atoms is higher than the number of nitrogen atoms, the formed silicon oxynitride has better adhesion, which can provide adhesion between the subsequently deposited film layer and the barrier layer 106. In some embodiments, the thickness T3 of the second adhesion layer 108 is about to about range, for example, about to about According to some embodiments, the second adhesive layer 108 having this thickness range can make the film layer subsequently formed thereon less likely to fall off. In some embodiments, the ratio of the thickness T2 of the barrier layer 106 to the thickness T3 of the second adhesive layer 108 is in the range of about 3 to about 6, for example, about 4 to about 5.

[0051] Although in Figure 1A In the embodiment of the present invention, the thickness T1 of the first adhesive layer 104 is substantially equal to the thickness T3 of the second adhesive layer 108, but the present invention is not limited thereto. The thickness T1 of the first adhesive layer 104 and / or the thickness T3 of the second adhesive layer 108 can be adjusted so that the thickness T1 of the first adhesive layer 104 is greater than or less than the thickness T3 of the second adhesive layer 108.

[0052] Compared to forming a substrate including an adhesion layer and a barrier layer of different materials, the present invention forms a first adhesion layer 104, a barrier layer 106, and a second adhesion layer 108 including silicon nitride oxides with different nitrogen-oxygen atomic ratios by adjusting the flow ratio of the oxygen source to the nitrogen source during the deposition process. This can simplify the process and reduce the production cost of the substrate 100, and can avoid the formation of unwanted defects in the substrate 100, thereby improving the yield and reliability of the substrate 100.

[0053] The first adhesion layer 104, the barrier layer 106, and the second adhesion layer 108 are all formed to include silicon oxynitride, wherein the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the adhesion layer is different from the atomic ratio of oxygen to nitrogen in the silicon oxynitride of the barrier layer. In one embodiment, the intra-layer distribution in each layer can be adjusted by adjusting the flow ratio of the oxygen source to the nitrogen source during deposition, so that the first adhesion layer 104, the barrier layer 106, and the second adhesion layer 108 become graded film layers.

[0054] Then, according to some embodiments, Figure 1B As shown, a filling layer 110 is formed on the first side of the second adhesive layer 108. The filling layer 110 can fill the holes on the surface of the first adhesive layer 106 so that subsequent film layers can be formed on a flat surface. In some embodiments, the formation of the filling layer 110 can include a chemical vapor deposition process, a spin coating process, a similar process, one of them or any combination thereof. In some embodiments, the material of the filling layer 110 includes borophosphosilicate glass (BPSG), borosilicate glass (BSG), phosphosilicate glass (PSG), fluorinated silicate glass (FSG), spin-on glass (SOG), plasma enhanced oxide (PEOX), similar materials, one of the aforementioned multilayer structures, or any combination thereof.

[0055] Then, according to some embodiments, a bonding layer 112 is formed on the filling layer 110. In some embodiments, the formation of the bonding layer 112 may include a chemical vapor deposition process, and the material of the bonding layer 112 may include silicon oxide. The bonding layer 112 may provide a bond between the subsequently formed film layer and the filling layer 110. In some embodiments, the thickness of the bonding layer 112 is about to about range, for example, about to about

[0056] Then, according to some embodiments, a single crystal layer 114 is formed on the bonding layer 112. The single crystal layer 114 is more lattice-matched with the epitaxial layer subsequently formed thereon, and can provide a surface on which the epitaxial layer is more easily grown. In some embodiments, the single crystal layer 114 can be bonded to the bonding layer 112 by a layer transfer process. In some embodiments, the single crystal layer 114 includes silicon (111).

[0057] Then, according to some embodiments, an epitaxial layer 116 is formed on the single crystal layer 114. In some embodiments, the formation of the epitaxial layer 116 may include a chemical vapor deposition process, such as a low pressure chemical vapor deposition process. In some embodiments, the material of the epitaxial layer 116 may include a III-V semiconductor material, such as gallium nitride.

[0058] In the above-mentioned embodiment, the present invention adjusts the flow rate ratio of the oxygen source to the nitrogen source during the deposition process, wherein different flow rate ratios of the oxygen source to the nitrogen source can be respectively suitable for forming an adhesion layer or a barrier layer to form a first adhesion layer 104, a barrier layer 106, and a second adhesion layer 108 comprising silicon nitride oxides with different nitrogen-oxygen atomic ratios, thereby reducing process complexity and reducing the production cost of the substrate 100, avoiding the formation of unwanted defects in the substrate 100, and thereby improving the yield and reliability of the substrate 100.

[0059] Figure 2 2 is a schematic cross-sectional view of a substrate 200 according to other embodiments. For simplicity, the same elements will be described with the same symbols below, and the materials and formation methods of these elements are as described above, so they will not be repeated. Figure 1A to Figure 1B For the embodiments of the present invention, the following embodiments dispose a conductive layer 118 on the second adhesive layer 108 so that the substrate 200 can be applied to a semiconductor processing tool of electrostatic adsorption, such as an electrostatic chuck (ESC).

[0060] In some embodiments, Figure 2 As shown, an epitaxial layer 116 is disposed on a first side of the second adhesive layer 108, and a conductive layer 118 is formed on a second side of the second adhesive layer 108 relative to the first side. The conductive layer 118 can be formed by a deposition process, such as a chemical vapor deposition process, a physical vapor deposition process, an atomic layer deposition process, or any combination of similar processes. In some embodiments, the thickness T4 of the conductive layer 118 is about to about range, for example, about to about

[0061] In some embodiments, the conductive layer 118 may include a material with a high melting point to be suitable for subsequent processes. For example, in an embodiment where the epitaxial layer 116 includes gallium nitride, gallium nitride is usually grown at 1100° C., so the conductive layer 118 may be made of a material with a melting point higher than about 1400° C. In some embodiments, the material of the conductive layer 118 may include Ti, TiN, Co, Ni, Pt, Ta, TaN, SiCr, or any combination thereof.

[0062] like Figure 2As shown, the second adhesive layer 108 includes a third side located between the first side and the second side, and the sidewall of the conductive layer 118 is coplanar with the sidewall of the third side of the second adhesive layer 108. According to some embodiments, the sidewall of the conductive layer 118 does not extend beyond the sidewall of the third side of the second adhesive layer 108 to prevent the extended portion from forming a leakage path.

[0063] In the above-mentioned embodiment, the present invention sets the conductive layer 118 on the substrate 200 so that the substrate 200 can be applied to a semiconductor processing tool with electrostatic adsorption. In addition, according to some embodiments, the conductive layer 118 includes a material with a high melting point to be suitable for subsequent processes. In addition, the present invention adjusts the sidewall of the conductive layer 118 to avoid forming an unwanted leakage path.

[0064] In summary, the present invention adjusts the flow rate ratio of the oxygen source to the nitrogen source during the deposition process, wherein a higher oxygen flow rate is used to form an adhesion layer, and a higher nitrogen flow rate is used to form a barrier layer, thereby forming an adhesion layer and a barrier layer containing silicon oxynitride with different nitrogen-oxygen atomic ratios. Compared to forming a substrate containing an adhesion layer and a barrier layer of different materials, the substrate and the manufacturing method thereof provided by the present invention can simplify the process and reduce the production cost, wherein the simplification of the process can avoid the formation of unwanted defects in the substrate, thereby improving the yield and reliability of the substrate.

[0065] In some embodiments, a conductive layer is disposed on the substrate so that the substrate can be applied to a semiconductor processing tool with electrostatic adsorption. In some embodiments, the conductive layer includes a material with a high melting point to be suitable for subsequent processes. In some embodiments, the sidewalls of the conductive layer are adjusted so that the sidewalls of the conductive layer do not extend beyond the sidewalls of the adhesive layer to avoid the extended portion from forming a leakage path.

[0066] Although the embodiments of the present invention have been described above with multiple embodiments, these embodiments are not intended to limit the embodiments of the present invention. It should be understood by those skilled in the art that they can make various changes, substitutions and replacements based on the embodiments of the present invention to achieve the same purposes and / or advantages as the multiple embodiments described herein. It should also be understood by those skilled in the art that such modifications or designs do not deviate from the spirit and scope of the embodiments of the present invention. Therefore, the scope of protection of the present invention shall be as defined by the claims attached hereto.

Claims

1. A substrate, characterized in that include: A ceramic core; a first adhesive layer, covering the ceramic core and comprising silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in the silicon oxynitride of the first adhesive layer has a first ratio; the atomic number of oxygen in the first ratio is greater than the atomic number of nitrogen; a barrier layer covering the first adhesive layer and comprising silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in the silicon oxynitride of the barrier layer has a second ratio, the atomic number of oxygen in the second ratio is less than the atomic number of nitrogen, and the second ratio is different from the first ratio; a second adhesion layer covering the barrier layer and comprising silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in the silicon oxynitride of the second adhesion layer has a third ratio, the atomic number of oxygen in the third ratio is greater than the atomic number of nitrogen, and the third ratio is different from the second ratio; and A conductive layer is disposed on a bottom surface of the second adhesive layer, wherein the outermost wall of the conductive layer is coplanar with the outermost wall of the second adhesive layer.

2. The substrate according to claim 1, characterized in that The first ratio and the third ratio are each independently in the range of 6:4 to 9:

1.

3. The substrate according to claim 1, characterized in that The second ratio is in the range of 1:9 to 4:

6.

4. The substrate according to claim 1, characterized in that The ratio of the thickness of the barrier layer to the thickness of the first adhesive layer or the thickness of the second adhesive layer is in the range of 3 to 6.

5. The substrate according to claim 1, characterized in that The ceramic core includes one or any combination of aluminum nitride, gallium nitride, aluminum gallium nitride, silicon carbide, zinc oxide, and gallium oxide.

6. The substrate according to claim 1, wherein Also includes: an epitaxial layer disposed on a first side of the second adhesion layer and comprising a III-V semiconductor material; and A bonding layer is disposed between the epitaxial layer and the second adhesive layer.

7. The substrate according to claim 6, characterized in that The invention further comprises a filling layer disposed between the bonding layer and the second adhesive layer.

8. The substrate according to claim 6, characterized in that The second side is located on the opposite side of the first side.

9. The substrate according to claim 8, characterized in that The sidewall of the conductive layer is coplanar with the sidewall of a third side of the second adhesive layer, wherein the third side is located between the first side and the second side.

10. The substrate according to claim 8, characterized in that The material of the conductive layer includes one or any combination of Ti, TiN, Co, Ni, Pt, Ta, TaN, and SiCr.

11. The substrate according to claim 8, characterized in that The thickness of the conductive layer is to range.

12. A method for manufacturing a substrate, characterized in that: include: Providing a ceramic core; providing a silicon source, an oxygen source, and a nitrogen source during a deposition process to sequentially form a first adhesion layer covering the ceramic core, a barrier layer covering the first adhesion layer, and a second adhesion layer covering the barrier layer, wherein the atomic number ratios of oxygen and nitrogen in the first adhesion layer, the barrier layer, and the second adhesion layer respectively have a first ratio, a second ratio, and a third ratio, the atomic number of oxygen in the first ratio is greater than the atomic number of nitrogen, the atomic number of oxygen in the second ratio is less than the atomic number of nitrogen, and the atomic number of oxygen in the third ratio is greater than the atomic number of nitrogen, wherein the second ratio is different from the first ratio and the third ratio is different from the second ratio; and A conductive layer is formed on a bottom surface of the second adhesive layer, wherein the outermost wall of the conductive layer is coplanar with the outermost wall of the second adhesive layer.

13. The method for manufacturing a substrate according to claim 12, wherein: The first ratio and the third ratio are each independently in the range of 6:4 to 9:

1.

14. The method for manufacturing a substrate according to claim 12, wherein: The second ratio is in the range of 1:9 to 4:

6.

15. The method for manufacturing a substrate according to claim 12, wherein: The oxygen source includes one or any combination of water vapor, oxygen, and ozone, the nitrogen source includes ammonia and / or nitrogen, and the deposition process includes adjusting the flow ratio of the oxygen to the nitrogen from 8:2 to 2:8 and then to 8:

2.

16. The method for manufacturing a substrate according to claim 12, wherein: The deposition process includes a chemical vapor deposition process.

17. The method for manufacturing a substrate according to claim 12, wherein: Also includes: forming a bonding layer on a first side of the second adhesive layer; forming an epitaxial layer on the bonding layer; and The conductive layer is formed on a second side of the second adhesive layer, wherein the second side is located opposite to the first side.

18. The method for manufacturing a substrate according to claim 17, wherein: The sidewall of the conductive layer is coplanar with the sidewall of a third side of the second adhesive layer, wherein the third side is located between the first side and the second side.

19. The method for manufacturing a substrate according to claim 17, wherein: The conductive layer includes one or any combination of Ti, TiN, Co, Ni, Pt, Ta, TaN, and SiCr.

20. The method for manufacturing a substrate according to claim 17, wherein: The method further includes forming a filling layer before forming the bonding layer, wherein the filling layer includes a multi-layer structure.

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