Heat transfer for power modules

Abstract

The present invention is entitled "Heat Transfer for Power Modules." In one general aspect, an apparatus may include a substrate, a semiconductor die coupled to a first surface of the substrate, and a metal layer disposed on a second surface of the substrate. The second surface may be opposite the first surface. The apparatus may also include a plurality of metal fins coupled to the metal layer and a metal ring coupled to the metal layer. The metal ring may surround the plurality of metal fins.

Description

Technical Field

[0001] This specification generally relates to heat transfer technology related to modules. Background Art

[0002] Typically, a heat sink or other heat transfer technology can transfer the heat generated by the electronic components included in the semiconductor device power module to, for example, the surrounding air and / or liquid coolant. By transferring or directing the heat away from the electronic components, the temperature of the electronic (e.g., semiconductor) components can be maintained at a desired level (e.g., to prevent overheating). Maintaining the temperature of the electronic components to prevent overheating can also prevent damage to the electronic components and / or power modules including such components. Overheating and any damage to the electronic components or associated power modules (e.g., warping of the power modules) may have a negative impact on the reliability of these components and modules. The heat transfer techniques used in some technologies may not be desirable for certain applications. Summary of the Invention

[0003] In one general aspect, a device may include a substrate, a semiconductor die coupled to a first surface of the substrate, and a metal layer disposed on a second surface of the substrate. The second surface may be opposite the first surface. The device may also include a plurality of metal fins coupled to the metal layer and a metal ring coupled to the metal layer. The metal ring may surround the plurality of metal fins.

[0004] In another general aspect, a device may include a first semiconductor die and a direct-bonded metal substrate. The semiconductor die may be coupled to a first surface of the direct-bonded metal substrate. The device may also include a metal layer disposed on a second surface of the direct-bonded metal substrate. The second surface is opposite the first surface. The device may further include a plurality of metal fins that can be actively metal-brazed to the metal layer, and a metal ring that can be actively metal-brazed to the metal layer. The metal ring may surround the plurality of metal fins.

[0005] In another general aspect, a method may include forming a module comprising a substrate and a metal layer disposed on a surface of the substrate. The method may also include coupling a plurality of metal fins to the metal layer and coupling a metal ring to the metal layer. The metal ring may surround the plurality of metal fins.

[0006] The details of one or more embodiments are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figures 1A to 1E is a diagram showing various views of a substrate assembly having a heat transfer mechanism that may be included in a power semiconductor device module and associated module assembly.

[0008] Figure 2 is shown in the following example: Figures 1A to 1E An illustration of a semiconductor die on a substrate assembly is shown.

[0009] Figure 3A and Figure 3B is a diagram showing a cover.

[0010] Figures 4A to 4E is a diagram showing a manufacturing process for a module assembly.

[0011] Figures 5A to 5F is a diagram illustrating another manufacturing process for a module assembly.

[0012] Figure 6 is a flow chart illustrating a method for manufacturing the module assembly described herein. DETAILED DESCRIPTION

[0013] As described herein, a module assembly includes: a module that may include one or more semiconductor dies encapsulated in a molding material; and a substrate (e.g., a direct bond metal (DBM) substrate) electrically coupled to the semiconductor dies. A heat transfer mechanism (e.g., a plurality of metal fins) may be coupled to the substrate, such as on a side of the substrate opposite the one or more semiconductor dies. The module may also include a metal ring coupled to the substrate (e.g., on the same side of the substrate as the heat transfer mechanism). The metal ring may provide mechanical support for the module to prevent warping of the module due to heating (e.g., due to mismatched coefficients of thermal expansion between elements of the module). The metal ring may also be used to increase the direct cooling area of ​​the substrate compared to current embodiments. That is, such as in the embodiments described herein, the use of the metal ring may increase the percentage of a given substrate that is directly cooled. For a given substrate size, this increased direct cooling area may achieve a reduction in thermal resistance (e.g., junction-to-case thermal resistance (ROJC) and / or junction-to-fluid thermal resistance (ROJF)). Thus, in some embodiments, due to the improved heat dissipation performance provided by the increased direct cooling area, larger semiconductor dies or additional semiconductor dies can be included on a given substrate. Furthermore, in some embodiments, due to this reduced thermal resistance, the size of the substrate can be reduced for a given embodiment, which can achieve a reduction in material costs.

[0014] A module assembly, such as those described herein, may further include a cover surrounding at least a portion of the module, such that a heat transfer mechanism coupled to the substrate is disposed within a channel of the cover. The heat transfer mechanism may be or may include a heat sink, such as a plurality of metal fins extending from the substrate. Furthermore, the module assemblies described herein may be configured as dual-cooled module assemblies. Thus, the module assemblies described herein may be configured to provide adequate cooling for the module while meeting size and cost targets for the module assembly.

[0015] The heat transfer mechanism described herein can provide improved thermal performance, thereby reducing the die size of the entire module assembly while providing improvements to the maximum current capability of the module assembly implemented in high-power device applications. For example, high-power device applications can include high-power applications greater than, for example, 600V (e.g., particularly when using silicon carbide (SiC) dies) and high-power applications greater than, for example, 400V (e.g., when using silicon dies). In some embodiments, the module assembly can be included in various applications, including but not limited to automotive applications (e.g., automotive high power modules (AHPMs), electric vehicles, hybrid electric vehicles), computer applications, industrial equipment, on-board charging applications, inverter applications, etc.

[0016] Figures 1A to 1E is a diagram showing various views of a substrate assembly (assembly) having a heat transfer mechanism. Figures 1A to 1E The substrate assembly may be included in a semiconductor device power module and related module assemblies. Figures 1A to 1E In each of the drawings, a direction axis is shown for reference and comparison with the various views and related views of the illustrated embodiment. For example, in Figure 1A and Figure 1B In the , the X and Y axes are shown (the Z axis goes in and out of the page). Figures 1B to 1E In the , the X and Z axes are shown (the Y axis goes in and out of the page). Figures 1A to 1E In an example embodiment, Figure 1C and Figure 1D and Figure 1A Corresponding, Figure 1E and Figure 1B correspond.

[0017] Figure 1A is a diagram illustrating an example assembly (substrate assembly) 100 that may be included in a semiconductor power device module (power module, module, etc.). For example, assembly 100 may be included in a power module implemented in a module assembly with direct cooling, such as those described herein. Figure 1A Shown with Figure 1C and Figure 1D The cross-sectional view corresponding to the section line 1A-1A is shown. Figure 1AIn the example of FIG. 1 , the assembly 100 includes a substrate 110 , a plurality of fins (eg, metal fins) 130 , and a ring (eg, a sealing ring, a metal ring, etc.) 120 .

[0018] In some embodiments, the plurality of fins 130 can be integrally formed (e.g., as a heat sink coupled to the metal layer 116). In some embodiments, each fin 130 in the plurality of fins can be coupled (e.g., active metal brazing, welding, soldering, gluing, etc.) to the metal layer 116 of the substrate 110. In the embodiments described herein, when an element is coupled or in contact with another element, the elements can be thermally coupled or in thermal contact via, for example, a thermal interface material, solder, conductive glue, active metal brazing, etc.

[0019] like Figure 1A As shown, substrate 110 may be a direct bond metal (DBM) substrate, such as a direct bond copper (DBC) substrate. In assembly 100, substrate 100 may include an insulating layer 112 (e.g., a ceramic layer), a first metal layer (e.g., a first copper layer) 112 disposed on a first side of insulating layer 112 (a first side of substrate 110), and a second metal layer (e.g., a second copper layer) 116 disposed on a second side of insulating layer 112 (a second side of substrate 110). Figure 1A As shown, substrate 110 may be arranged in a plane P1 aligned along the X-axis. Accordingly, metal layers 114 and 116 may be arranged in respective planes that are parallel to plane P1 and also aligned along the X-axis.

[0020] In some embodiments, the first metal layer 114 may be a patterned metal layer on which one or more semiconductor dies ( Figure 1A As described herein, the signal and / or power terminals ( Figure 1A 1 and 2. A first metal layer 114 (not shown) may also be disposed on the first metal layer 114, wherein the metal layer 114 may provide electrical connections between the terminals and the semiconductor die. As also described herein, wire bonds may be formed between the semiconductor die and the metal layer 114 to provide further electrical connections between the semiconductor die and the terminals, such as are suitable for a particular embodiment.

[0021] like Figure 1A As shown, at least Figure 1C and Figure 1D As further shown in FIG, the ring 120 may surround the fins 130. That is, the ring 120 may include an open center portion (opening), and as shown in FIG. Figure 1A When the ring 120 is coupled to the substrate 110 as shown, the fins 130 may be at least partially disposed within the openings of the ring 120. Figure 1AAs shown, the ring 120 may have a thickness (height) H1 along a direction D1, wherein the direction D1 is orthogonal to the plane P1 and aligned along the Y axis. Figure 1A As shown, the fins 130 can have a height H2 aligned along the direction D1 and greater than the thickness H1 of the ring 120. In some embodiments, H1 can be in the range of 1 to 2 millimeters (mm), and H2 can be in the range of 4 to 5 mm. Thus, in some embodiments, the fins 130 can have a height H2 greater than the thickness H1 of the ring 120. In other words, in some embodiments, the fins 130 can be formed by the surface 122 of the ring 120 (e.g., as shown in FIG. Figure 1A , a plane defined by a bottom surface of the ring 120 (as shown in ), may intersect the fin 130 such that only a portion of the fin 130 is surrounded by the ring 120 , eg, the fin 130 extends beyond the surface 122 of the ring 120 .

[0022] Figure 1B 1 is a diagram illustrating an example assembly (substrate assembly) 100a that may be included in a semiconductor power device module (power module, module, etc.). Figure 1A The illustrated assembly 100 , assembly 100 a , may be included in a power module implemented in a module assembly with direct cooling, such as those described herein. Figure 1B The assembly 100a is shown with Figure 1E In this example embodiment, the assembly 100a includes a cross-sectional view corresponding to the section line 1B-1B. Figure 1A For the purpose of brevity, the following are similar aspects and elements of the assembly 100. Figure 1B Those aspects will not be described in detail again.

[0023] Assembly 100a differs from assembly 100 in that assembly 100 includes a sealing element 140 disposed in a groove 140 of a ring (sealing ring, metal ring, etc.) 120a. As further described herein, sealing element 140 may be an O-ring that, when the cover is coupled to a module including substrate assembly 100a, can form a liquid-tight (water-tight, etc.) seal between ring 120a and the cover, allowing passages defined in the cover to function as a water jacket to directly cool an associated power module.

[0024] Figure 1C yes Figure 1A A plan view of an example embodiment of a substrate assembly 100 is shown. Figure 1C The floor plan shown is from Figure 1A The bottom side of the substrate assembly 100 is shown. Figure 1C In FIG. 1 , the outer periphery of the substrate 110 is indicated by a dotted line to illustrate the relationship between the substrate 110 and the ring 120. As described above, Figure 1C The section line 1A-1A shown in FIG corresponds to Figure 1A Again, Figure 1C The floor plan shown is from Figure 1A The bottom side of the substrate assembly 100 is shown.

[0025] like Figure 1C As shown, in this example, the plurality of metal fins 130 coupled to the metal layer 116 may be a plurality of rectangular fins arranged in parallel. Figure 1D and Figure 1E The metal fins 130 may have other shapes and arrangements. The shape and arrangement of the fins 130 will depend on the particular implementation.

[0026] like Figure 1C As shown, in this example, the ring 120 may have a first width W1, the substrate 110 may have a second width W2, and the opening in the ring 120 (surrounding the metal fin 130) may have a third width W3. Figure 1C As shown, the ring 120 may have a first length L1, the substrate 110 may have a second length L2, and the opening in the ring 120 may have a third length L3. The specific dimensions of W1, W2, W3, L1, and L2 will depend on the particular embodiment. Figure 1C As shown, in this example, width W1 is greater than width W2 and W3, and width W2 is greater than width W3. Similarly, length L1 is greater than length L2 and L3, and length L2 is greater than length L3. As described above, this arrangement of ring 120 and substrate 110 can increase the direct cooling area of ​​substrate 110 compared to current methods. It will be understood that the relationship between width and length (of ring 120 and substrate 110) discussed above can also be applied to other embodiments, such as those described herein. For example, in some embodiments, the difference between W1 and W3 (and / or the difference between L1 and L3) can be in the range of 4 to 5 mm, the difference between W2 and W3 (and / or the difference between L2 and L3) can be less than or equal to 3 mm, and W2 and / or L2 can be in the range of 40 to 45 mm.

[0027] Figure 1D yes Figure 1A FIG. 1 is a plan view of another exemplary embodiment of a substrate assembly 100. Figure 1C The floor plan shown, Figure 1D The plan view of the example substrate assembly 100 shown in FIG. Figure 1A The bottom side of the substrate assembly 100 is shown. As described above, Figure 1D The section line 1A-1A shown in FIG corresponds to Figure 1A The cross-sectional view shown.

[0028] Figure 1DAs shown, in this example, the plurality of metal fins 130 coupled to the metal layer 116 may be a matrix (eg, rows and columns) of rectangular fins. In some embodiments, such as Figure 1C and Figure 1E The metal fins 130 may have other shapes and arrangements. The shape and arrangement of the fins 130 will depend on the implementation and are not limited to the examples provided herein.

[0029] Figure 1E yes Figure 1B A plan view of an example embodiment of a substrate assembly 100a is shown. Figure 1C and Figure 1D As shown in Figure 1A A plan view of an example of a substrate assembly 100, Figure 1E The floor plan shown is from Figure 1B The bottom side of the substrate assembly 100a is shown. As described above, Figure 1E The section line 1B-1B shown in FIG corresponds to Figure 1B The cross-sectional view shown.

[0030] Figure 1E The arrangement of a sealing element 140 (e.g., an O-ring) in the ring 120a is shown. Figure 1E As shown, the sealing element 140 can be disposed in the ring 120a (e.g., as shown in FIG. Figure 1B In some embodiments, sealing element 140 can form a liquid-tight seal between ring 120a and a cover coupled to ring 120a (eg, and a module including substrate assembly 100a).

[0031] like Figure 1E As shown, in this example, the plurality of metal fins 130 coupled to the metal layer 116 can be a matrix (eg, rows and columns) of circular fins. In some embodiments, such as Figure 1C and Figure 1D The metal fins 130 may have other shapes and arrangements. The shape and arrangement of the fins 130 will depend on the implementation and are not limited to the examples provided herein.

[0032] Figure 2 is shown in the following example: Figures 1A to 1E For illustration purposes, further reference is made to substrate assembly 100 (an example of which is shown in FIG. Figure 1A 、 Figure 1C and Figure 1D ) to describe Figure 2 In some embodiments, other substrate assemblies having other arrangements can be used.

[0033] In this example, Figure 2 Schematically, a plurality of semiconductor dies 200 are provided on a substrate 110 of a substrate assembly 100. For example, the semiconductor dies 200 may be provided on a metal layer 114 (eg, a patterned metal layer) of the substrate 114. Figure 2 In some embodiments, the number of semiconductor dies 200 coupled to the substrate assembly 100 may vary, the corresponding sizes of the semiconductor dies 200 may vary, etc. For example, in some embodiments, a single semiconductor 200 may be included, or more than one semiconductor die may be included. Figure 2 Fewer semiconductor dies 200 are shown, or may include more than Figure 2 More semiconductor dies are shown. Note that the patterning of metal layer 114 will depend on the particular implementation, such as the semiconductor dies included, the signal terminals and / or power terminals included, etc.

[0034] Figure 3A and Figure 3B is a diagram showing a cover that may be included in a module assembly. For example, Figure 3A A first cover 300 is shown, and Figure 3B The second cover 305 is shown coupled to the first cover 300 in the module assembly. Figure 3B In FIG, a plurality of power modules 370 are included in the module assembly shown, wherein the modules 370 are disposed between a first cover 300 and a second cover 305. Figure 3B In the embodiment, the second cover 305 is coupled (clamped, attached, etc.) to the first cover 300 using a plurality of attachment mechanisms (eg, screws, rivets, etc.) 360 .

[0035] In some embodiments, as Figure 3B As shown, attaching cover 305 to cover 300 also secures module 370 between covers 300 and 305 and can form a watertight seal (e.g., to prevent leakage of coolant fluid through cover 300) between sealing rings (e.g., rings 120, 120a) of cover 300 and module 370. Figure 3B Also shown is section line 4-4, which corresponds to Figures 4A to 4E and Figures 5A to 5F Depending on the implementation, covers 300 and 305 may be formed from plastic, metal, or any other suitable material.

[0036] like Figure 3A As shown, the cover 300 includes an inlet port 310 and an outlet port 320. In this example, the inlet port 310 and the outlet port 320 are fluidly connected to a channel 350 in the cover 300, which allows the fluid (coolant) to flow from the inlet port 310 through the channel 350 to the outlet port 320 to achieve Figure 3BDirect cooling of module 370 is included in the module assembly shown.

[0037] For example, fluid can flow from the inlet port 310 of the cover 300 through the channel 350 to the outlet port 350. In some embodiments (although in Figure 3A and Figure 3B (not specifically shown in the figures), the cover 305 may also include an inlet port, a channel, and an outlet port. For example, the cover 305 may include an inlet port fluidically coupled to the inlet port 310 of the cover 300 and an outlet port fluidically coupled to the outlet port 320 of the cover 300. The cover 305 may further include a channel (e.g., a fluid channel) fluidically connecting its inlet port and its outlet port.

[0038] like Figure 3A As shown, for Figure 3B Each module 370 of the module assembly shown, the cover 305 may include a corresponding sealing element 340 disposed in the cover 300. For example, the sealing element 340 may be disposed in a corresponding groove of the cover 300, such as, for example Figure 4D and Figure 4E The sealing element may be an O-ring, a sealant, or some other material that may be disposed in a corresponding groove. In embodiments where the cover 305 also includes a fluid channel (such as channel 350), a sealing element may similarly be used to separate the cover 305 from the fluid channel included in the cover 305. Figure 3B The modules 370 in the illustrated module assembly form a liquid-tight seal between them.

[0039] like Figure 3A As shown, the cover 300 includes Figure 3B Each module 370 of the module assembly shown has an associated opening, wherein the sealing element 340 defines a corresponding perimeter around each opening in the cover 340 to create a corresponding liquid-tight seal. In some embodiments, the cover 305 can have similar openings and sealing elements. Figure 3B As shown, each module 370 included in the illustrated module assembly can include a plurality of signal terminals and / or power terminals 375, where the terminals 375 can provide electrical connection to the semiconductor die 200 included in the module (e.g., via a patterned metal layer 114 and / or one or more wire bonds, etc.).

[0040] Figures 4A to 4E is a diagram showing the manufacturing process for a module assembly. In this example, Figures 4A to 4E The diagram shown is the same as Figure 3B The cross-sectional view corresponding to the section line 4-4 in FIG. Figures 4A to 4E In the description of the process, reference is made to the elements of the apparatus shown in the other figures of the present application by way of example for the purpose of illustration. In some embodiments, the apparatus may be used Figures 4A to 4EThe illustrated process may be used to produce module assemblies having configurations other than illustrated and including modules having configurations other than illustrated.

[0041] In this example, if Figure 4A As shown, a semiconductor device module assembly process can be used to produce module 370. Figure 4A As shown, module 370 may include substrate 110, one or more semiconductor dies 200, power terminals and / or signal terminals 375, and molding compound 410. Semiconductor dies 200 and terminals 375 may be coupled to a metal layer 114 (e.g., a patterned metal layer) of substrate 110. Module 370 may also include one or more wire bonds 420 between the one or more semiconductor dies 200 and metal layer 114. Terminals 375, metal layer 114, and / or one or more wire bonds 420 may provide multiple electrical connections to the one or more semiconductor dies 200.

[0042] like Figure 4A As shown, molding compound 410 may encapsulate portions of module 370. Figure 4A As shown, the terminal 375 can extend from the inside of the molding material 410 to the outside of the molding material 410, wherein the portion of the terminal 375 disposed outside the molding material 410 is used to provide power to the semiconductor die 200 and transmit electrical signals to and / or from the semiconductor die. Figure 4A As shown, a surface of the metal layer 116 may be exposed through the molding compound 410 .

[0043] Now refer to Figure 4B , in production Figure 4A After the module 370 is completed, the metal ring 120 (or metal ring 120a) can be coupled to the metal layer 116 of the substrate 110 (eg, brazing, soldering, etc.). Figure 4B As further shown, the plurality of metal fins 130 can be coupled (e.g., brazed, soldered, etc.) to the metal layer 116. In some embodiments, the plurality of metal fins 130 can be integrally formed (e.g., on a substrate), or can each be individually coupled to the metal layer 116. In some embodiments, the plurality of metal fins 130 can be integrally formed with the metal layer 116. Figure 4C A plating operation (eg, a nickel plating operation, a solder plating operation, etc.) 430 may be performed on the module 370 to plate the exposed portions of the ring 120 , the fins 130 , and the terminals 375 .

[0044] like Figure 4D As shown, in Figure 4C After the plating operation 430, the cover 300 can be coupled to the module 370 (and additional modules, such as discussed above) in the module assembly. Figure 4DAs shown, a sealing mechanism 340 (e.g., an O-ring, adhesive, etc.) can be disposed in a groove 345 of the cover 300. Figure 4D As shown, the sealing mechanism 340 can be compressed between the ring 120 and the cover 300 (e.g., within the groove 345) to create a liquid-tight seal between the ring 120 and the cover 300. Figure 4D As shown, the plurality of fins 130 may be provided with the channels 350 of the cover 300 such that the fluid (coolant) flowing in the channels 350 flows over the fins 130 to provide direct cooling to the modules 370 .

[0045] Now refer to Figure 4E , the cover 305 (second cover) can be coupled to the first cover 300 (and module 370) using an attachment mechanism 360 (e.g., screws, rivets, etc.). In some embodiments, the attachment of the cover 305 to the cover 300 can compress the sealing mechanism 340 to create a watertight seal between the cover 300 and the ring 120. As described above (although in Figure 4E ), the cover 305 may also include a fluid channel that can be used to provide fluid flow between the second side (e.g., Figure 4E Direct cooling is performed on the top side of the cooling tube.

[0046] Figures 5A to 5F is a diagram showing another manufacturing process for a module assembly. In this example, similar to Figures 4A to 4E Example implementations of Figures 5A to 5F The diagram shown is the same as Figure 3B The cross-sectional view corresponding to the section line 4-4 in FIG. Figures 4A to 4E In the process of Figures 5A to 5F In the description of the process, for the purpose of illustration, reference will be made to the elements of the apparatus shown in the other figures of the present application by way of example. In some embodiments, the apparatus may be used Figures 5A to 5F The illustrated process may be used to produce module assemblies having configurations other than illustrated and including modules having configurations other than illustrated.

[0047] like Figure 5A As shown, a direct bond metal (DBM) substrate 110 can be produced using a DBM substrate manufacturing process. As described herein, Figure 5A The substrate 110 in the embodiment includes an insulating layer 112, a first (patterned) metal layer 114 disposed on a first side of the insulating layer 112 (e.g., a first side of the substrate 110), and a second metal layer 116 disposed on a second side of the insulating layer 112 (e.g., a second side of the substrate 110).

[0048] like Figure 5BAs shown, a ring 120 (seal ring, metal ring, etc.) and a plurality of fins 130 may be coupled to a substrate 110 to produce a substrate assembly 100 (e.g., such as Figure 1A The methods described herein (e.g., active metal brazing, soldering, welding, using thermal interface materials, etc.) can be used to connect the Figure 5B The ring 120 and the plurality of fins 130 are coupled to the metal layer 116. Figure 5C As shown, a plating operation 530 similar to the plating operation 430 may be performed to plate (e.g., nickel plating, solder plating, etc.) the ring 120 and the fin 130. In some embodiments, instead, the ring 120 and the fin 130 may be plated (e.g., nickel plating, solder plating, etc.) as shown below. Figure 5D The operation in question is followed by a plating operation 530 .

[0049] like Figure 5D As shown, a module assembly process may be performed to produce a module assembly 370. Figure 5D As shown, similar to Figure 4A , module 370 may include substrate 110, one or more semiconductor dies 200, power terminals and / or signal terminals 375, and molding compound 510. Semiconductor dies 200 and terminals 375 may be coupled to a metal layer 114 (e.g., a patterned metal layer) of substrate 110. Module 370 may also include one or more wire bonds 520 between the one or more semiconductor dies 200 and metal layer 114. Terminals 375, metal layer 114, and / or one or more wire bonds 520 may provide multiple electrical connections to the one or more semiconductor dies 200.

[0050] like Figure 5D As shown, molding compound 510 may encapsulate portions of module 370. Figure 5D As shown, the terminal 375 can extend from the inside of the molding material 510 to the outside of the molding material 510, wherein the portion of the terminal 375 disposed outside the molding material 510 is used to provide power to the semiconductor die 200 and transmit electrical signals to and / or from the semiconductor die. Figure 5D As shown, the surface of the metal layer 116 (and the ring 120 and the fin 530) can be exposed through the molding compound 510 (outside the molding compound). Figure 5D After the operations shown, the module 370 may be executed Figure 5C A plating operation (eg, a nickel plating operation, a solder plating operation, etc.) 530 is performed to plate the exposed portions of the ring 120 , the fins 130 , and the terminals 375 .

[0051] like Figure 5E As shown, in Figure 5D After the operation (or after the plating operation 530), the cover 300 can be coupled with the module 370 (and additional modules such as those discussed above) in the module assembly. Figure 5E As shown, a sealing mechanism 340 (e.g., an O-ring, adhesive, etc.) can be disposed in a groove 345 of the cover 300. Figure 5E As shown, the sealing mechanism 340 can be compressed between the ring 120 and the cover 300 (e.g., within the groove 345) to create a liquid-tight seal between the ring 120 and the cover 300. Figure 5E As shown, the plurality of fins 130 may be provided with the channels 350 of the cover 300 such that the fluid (coolant) flowing in the channels 350 flows over the fins 130 to provide direct cooling to the module 370 .

[0052] Now refer to Figure 5F , the cover 305 (second cover) can be coupled to the first cover 300 (and module 370) using an attachment mechanism 360 (e.g., screws, rivets, etc.). In some embodiments, the attachment of the cover 305 to the cover 300 can compress the sealing mechanism 340 to create a watertight seal between the cover 300 and the ring 120. As described above (although in Figure 5F ), the cover 305 may also include fluid channels that can be used to connect the second side (e.g., Figure 5F In some embodiments, Figures 4A to 4E and Figures 5A to 5F The module components may include Figure 1B The sealing mechanism 140 may be provided in the groove 145 of the sealing ring 120. In such an embodiment, the sealing mechanism 140 may be used in place of or in addition to the sealing mechanism 340.

[0053] Figure 6 6 is a flow chart illustrating a method 600 that can be used to manufacture the module assembly described herein. The method 600 is shown by way of example and for purposes of illustration. In this example, the order of operations in the method 600 generally corresponds to Figures 4A to 4E In some embodiments, the operations of method 600 may be performed in the same manner as Figure 6 For example, the operations of method 600 may be performed in a different order than shown. Figures 5A to 5F In some embodiments, the operations for manufacturing a module assembly (such as the module assembly described herein) may be performed in a different order. Figure 6 The purpose will at least further refer to Figures 4A to 4E Method 600 will be described.

[0054] like Figure 6As shown, method 600 includes, at block 610, forming a module including a substrate including a metal layer (e.g., a first metal layer) disposed on a substrate surface (e.g., a first surface of the substrate) such as a DBM substrate (e.g., a DBC substrate). In some embodiments, the module may be, for example, Figure 4A . As discussed, module 370 can include one or more semiconductor dies 200 disposed on the second surface of substrate 110. For example, one or more semiconductor dies 200 can be disposed on a patterned direct-bond metal layer disposed on the first surface of substrate 110. Module 370 can also include signal and / or power pins 375, one or more wire bonds 420, and a molding compound 410 that at least partially encapsulates the components of module 370.

[0055] At block 620, the method 600 includes coupling a plurality of metal fins to the metal layer 116 (eg, on the second side of the substrate 110). In some embodiments, the metal fins of block 620 may be formed in a manner similar to that of FIG. Figures 1C to 1E 1. The exemplary metal fins 130 are shown in FIG. In some embodiments, the metal fins 130 may take other forms. In some embodiments, the plurality of metal fins 130 coupled to the metal layer 116 may be included in an integrated heat transfer mechanism (e.g., a heat sink). In some embodiments, the plurality of metal fins 130 may be individually (e.g., directly) coupled to the metal layer 116. Depending on the particular embodiment, the plurality of metal fins 130 may be coupled to the metal layer 116 using active metal brazing, soldering, thermal interface materials, and the like.

[0056] At block 630, the method 600 includes coupling the metal ring 120 to the metal layer 116 such that the metal ring 120 (e.g., the opening in the metal ring 120) surrounds the plurality of metal fins 130. In some embodiments, the operations of blocks 620 and 630 can be performed simultaneously. For example, the metal ring 120 and the metal fins 130 can be coupled to the metal layer 116 using conventional process operations such as active metal brazing, soldering, thermal interface materials, etc.

[0057] At block 640, method 600 includes coupling a cover (e.g., cover 300) to the metal ring 120 (e.g., coupling the cover 300 to the module 370). As described above, the cover 300 may include channels 350 that serve as a water jacket for direct cooling of the module 370. For example, water (or another coolant) flowing in the channels 350 in combination with the metal fins 130 may provide direct cooling of the module 370. As shown in block 640, coupling the cover 300 to the metal ring 120 may create a watertight seal between the metal ring 120 and the cover 300. For example, coupling the cover 300 to the metal ring 120 (e.g., Figure 4EAs shown in FIG. 1 , a sealing mechanism 340 (e.g., an O-ring, adhesive, etc.) can be compressed between the cover 300 and the metal ring 120. As described herein, the sealing mechanism 340 can be disposed in a groove (e.g., groove 345) in the cover 300. In some embodiments, the sealing mechanism (e.g., sealing mechanism 140) can be disposed in a groove (e.g., groove 345) of the metal ring. Figure 1B The groove 145 of the metal ring 120a is shown).

[0058] In some embodiments, such as Figure 4E As shown in , a second cover (e.g., cover 305) can be coupled to a module 370 (e.g., on a side of the module 370 opposite the cover 300) using one or more attachment mechanisms (e.g., screws 360), wherein one or more attachment mechanisms can clamp (fix, hold, etc.) the module 370 between the cover 300 and the cover 305 so that the sealing mechanism 140 is compressed to create (provide, form, etc.) a watertight seal between the cover 300 and the metal ring 120. The cover 305 can be another heat transfer mechanism, thereby providing dual-sided cooling (dual cooling) for the module 370. In some embodiments, such as those described herein, multiple modules 370 can be included in a module assembly produced using method 600. That is, multiple modules 370 can be disposed between the first cover 300 and the second cover 305.

[0059] It will be understood that in the foregoing description, when an element is referred to as being on another element, connected to another element, electrically connected to another element, coupled to another element or electrically coupled to another element, the element can be directly on another element, connected or coupled to another element, or one or more intermediate elements can be present. On the contrary, when an element is referred to as being directly on another element, directly connected to another element or directly coupled to another element, there is no intermediate element. Although the term directly on..., directly connected to... or directly coupled to... may not be used in the entire specific embodiment, the element shown as being directly on an element, directly connected or directly coupled can be mentioned in this manner. The claims of the present application (if any) may be revised to narrate the exemplary relationships described in the specification or shown in the drawings.

[0060] As used in this specification, singular forms may include plural forms unless the context clearly indicates otherwise. Spatially relative terms (e.g., above, above, above, below, below, under, below, etc.) are intended to encompass different orientations of the device in use or operation, in addition to the orientations shown in the drawings. In some embodiments, the relative terms above and below may include vertically above and vertically below, respectively. In some embodiments, the term adjacent can include lateral adjacent or horizontal adjacent.

[0061] Implementations of the various techniques described herein may be implemented (e.g., included) in digital electronic circuitry, computer hardware, firmware, software, or a combination thereof. Some implementations may be implemented using various semiconductor processing and / or packaging technologies. Some implementations may be implemented using various types of semiconductor processing technologies associated with semiconductor substrates, including, but not limited to, silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), and the like.

[0062] Although certain features of the described embodiments have been described as described herein, many modifications, alternatives, variations, and equivalents will now occur to those skilled in the art. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations that fall within the scope of a specific implementation. It should be understood that these modifications and variations are presented by way of example only and not limitation, and that various changes in form and detail may be made. Except for mutually exclusive combinations, any portion of the apparatus and / or method described herein may be combined in any combination. The embodiments described herein can include various combinations and / or sub-combinations of the functions, components, and / or features of the different embodiments described.

Claims

1. A semiconductor device apparatus, comprising: a direct bonded metal (DBM) substrate comprising an insulator layer; a semiconductor die coupled to the first side of the insulator layer; a direct bonding metal layer disposed on a second side of the DBM substrate, the second side being opposite to the first side; a plurality of metal fins, the plurality of metal fins being directly coupled to the direct bonding metal layer; and A metal ring is coupled to the direct bonding metal layer, the metal ring comprising an opening, wherein the plurality of metal fins are directly coupled to the direct bonding metal layer through the opening.

2. The semiconductor device arrangement according to claim 1, wherein: The plurality of metal fins have a height orthogonal to the second side of the insulator layer; and the metal ring having a thickness orthogonal to the second side of the insulator layer, The height is greater than the thickness.

3. The semiconductor device arrangement according to claim 1, wherein: The first side of the insulator layer and the second side of the insulator layer have a first width and a first length; The metal ring has a second width aligned with the first width and a second length aligned with the first length; and The openings in the metal ring are arranged around the plurality of metal fins, the second width is greater than the first width, and the second length is greater than the first length, The opening has a third width aligned with the first width and the second width and a third length aligned with the first length and the second length, The third width is smaller than the first width and smaller than the second width, and The third length is smaller than the first length and smaller than the second length.

4. The semiconductor device arrangement according to claim 1 , further comprising: a cover coupled to the metal ring, the cover comprising a channel, the plurality of metal fins being disposed within the channel; and a sealing mechanism disposed between the cover and the metal ring, The cover includes an inlet opening and an outlet opening in fluid communication with the inlet opening via the passage.

5. The semiconductor device arrangement according to claim 4, wherein the sealing mechanism comprises an O-ring disposed within at least one of: including a recess in said cover; or A groove is included in the metal ring.

6. The semiconductor device arrangement according to claim 4, wherein the cover is a first cover, the arrangement further comprising: a molding compound, the molding compound encapsulating the DBM substrate and the semiconductor die; and a second cover coupled to the molding compound, The first cover is coupled to the second cover via a coupling mechanism disposed transversely to the DBM substrate.

7. The semiconductor device arrangement according to claim 1, wherein: The direct bonding metal layer is a direct bonding copper layer; The plurality of metal fins are a plurality of copper fins; and The metal ring is a copper ring.

8. The semiconductor device arrangement according to claim 1, wherein: The semiconductor die is a first semiconductor die, the apparatus further comprising one or more other semiconductor dies coupled to the first side of the insulator layer; and The direct bonding metal layer is a first direct bonding metal layer, and the device further includes a second direct bonding metal layer arranged on the first side of the insulator layer, the second direct bonding metal layer is arranged between the insulator layer and the first semiconductor tube core, and is arranged between the insulator layer and the one or more other semiconductor tube cores.

9. A semiconductor device arrangement, comprising: a first semiconductor die; a direct bond metal substrate, the first semiconductor die coupled to a first side of an insulator layer of the direct bond metal substrate; a first direct bonding metal layer disposed on a second side of the direct bonding metal substrate, the second side being opposite to the first side; a plurality of metal fins, the plurality of metal fins being directly active metal brazed to the first direct bond metal layer; a metal ring brazed to the first direct bond metal layer active metal, the metal ring comprising an opening, wherein the plurality of metal fins are directly brazed to the first direct bond metal layer through the opening; one or more other semiconductor dies coupled to the first side of the insulator layer; and A second direct bonding metal layer is disposed on the first side of the insulator layer, the second direct bonding metal layer is disposed between the insulator layer and the first semiconductor die, and between the insulator layer and the one or more other semiconductor dies.

10. A method for producing a semiconductor device apparatus, the method comprising: coupling the semiconductor die to a first side of the insulator layer of the direct bond metal (DBM) substrate; directly coupling a plurality of metal fins to a metal layer of the DBM substrate, the metal layer being disposed on a second side of the insulator layer; as well as A metal ring is coupled to the metal layer, the metal ring including an opening through which the plurality of metal fins are directly coupled to the metal layer.

11. The method according to claim 10, wherein: Directly coupling the plurality of metal fins to the metal layer includes: brazing the plurality of metal fins to the metal layer active metal; and Coupling the metal ring to the metal layer includes brazing the metal ring directly to the metal layer active metal.

12. The method according to claim 10, further comprising: A cover is coupled to the metal ring, the cover including a channel within which the plurality of metal fins are disposed, the coupling of the cover to the metal ring creating a watertight seal between the metal ring and the cover.

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