Apparatus for processing substrate and method for processing apparatus

Abstract

The present invention relates to an apparatus for processing a substrate and a method for processing a substrate. The apparatus for processing a substrate includes: a housing having a processing space inside the housing; a plate supporting the substrate inside the housing; a heating member disposed inside the plate to heat the substrate and including a plurality of heating zones; a temperature measuring member measuring the temperature of the substrate relative to each of the plurality of heating zones of the heating member; and a control unit controlling the temperature of the heating member in a dynamic section of a temperature variation diagram measured in the temperature measuring member. The control unit performs temperature control relative to each of the plurality of heating zones of the heating member so that the thickness of the thin film on the substrate is uniform.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority under 35 U.S.C. §119 from Korean Patent Application No. 10-2019-0068208 filed on June 10, 2019 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concept described herein relate to an apparatus for processing a substrate and a method for processing a substrate, and more particularly, to an apparatus for processing a substrate and a method for processing a substrate capable of controlling a heating member for the substrate. Background Art

[0004] In order to manufacture semiconductor devices, various processes such as photolithography, etching, deposition, ion implantation and cleaning processes are performed, among which the photolithography process for forming a pattern performs an important function to achieve high integration of semiconductor devices.

[0005] The photolithography process mainly includes a coating process, an exposure process, and a development process, and a baking process is performed before and after the exposure process. The baking process is to perform heat treatment with respect to the substrate. According to the baking process, when the substrate is placed on a heating plate, the substrate is heat-treated by a heating member provided in the heating plate.

[0006] However, there are many interference factors that may affect the interior of the chamber or plate. Interference factors may be caused by equipment performance or performance differences of each heating zone of the heating member. Due to these interference factors, even if the same heat capacity is applied to the heating plate, uniform heat cannot be applied to the substrate. When uniform heat cannot be applied to the substrate, the uniformity of the film thickness of the photoresist liquid formed on the substrate is affected. Summary of the invention

[0007] Embodiments of the present inventive concept are to make the thickness of a thin film formed on a substrate uniform by partially adjusting the temperature of a heating member.

[0008] Embodiments of the inventive concept are to make the thickness of a thin film formed on a substrate uniform by adjusting the thickness of the thin film corresponding to each of a plurality of heating zones of a heating member.

[0009] The technical problems to be solved by the inventive concept are not limited to the above-mentioned problems. Those skilled in the art to which the inventive concept belongs will clearly understand any other technical problems not mentioned herein from the following description.

[0010] An apparatus for processing a substrate is disclosed.

[0011] According to an exemplary embodiment, an apparatus for processing a substrate may include a housing having a processing space inside the housing; a plate supporting the substrate inside the housing; a heating member disposed inside the plate to heat the substrate, and the heating member includes a plurality of heating zones; a temperature measuring member measuring a temperature of the substrate relative to each of the plurality of heating zones of the heating member; and a control unit controlling the temperature of the heating member in a dynamic section of a temperature variation diagram measured in the temperature measuring member.

[0012] The dynamic section may be a temperature section starting from when the substrate is placed on the plate heated to a specific temperature until the temperature of the plate reaches a normal temperature.

[0013] The control unit may form a profile of the film thickness on the substrate, the profile corresponding to the temperature measurement result of the temperature measuring member for each of the plurality of heating zones.

[0014] The control unit may perform temperature control with respect to each of the plurality of heating zones of the heating member so as to make the thickness of the thin film on the substrate uniform.

[0015] The control unit can select a heating zone showing a specific value or a heating zone showing more in error than a reference value based on the profile of the film thickness of the multiple heating zones; and perform temperature control using a temperature map in the selected heating zone and a film thickness value corresponding to the thickness value of the film corresponding to the selected heating zone.

[0016] The control unit may use the calorie loss of the plate, which is displayed in a temperature map of the selected heating zone, and the current film thickness and the desired film thickness of the selected heating zone to control the temperature of the selected heating zone.

[0017] The temperature of the heating means in the control unit may be controlled by adjusting the gain of a proportional–integral–derivative (PID) controller connected to the heating means.

[0018] According to an exemplary embodiment, a method for processing a substrate is disclosed.

[0019] A method for processing a substrate may include forming a thin film of photoresist liquid on the substrate by heating the substrate coated with the photoresist liquid to evaporate a solvent contained in the photoresist liquid; and heating the substrate by partially controlling the temperature of a plate so that the thickness of the film of the photoresist liquid is uniform.

[0020] The temperature of the dynamic region of the temperature profile of the substrate may be adjusted.

[0021] The method for processing a substrate may also include forming a thickness profile of the thin film of the photoresist liquid based on a temperature change of the substrate; and controlling the temperature using a desired photoresist liquid thickness, a current photoresist liquid thickness, a current temperature of the substrate, and a calorie loss of the plate shown in a temperature map of the substrate.

[0022] Control of the temperature can be performed by adjusting the gain of the PID controller. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above and other objects and features will become apparent from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0024] Figure 1 is a view showing an apparatus for processing a substrate when viewed from above;

[0025] Figure 2 Figure 2 shows that when viewed along line AA Figure 1 A view of an apparatus for processing a substrate;

[0026] Figure 3 Figure 2 shows that when viewed along line BB Figure 1 A view of an apparatus for processing a substrate;

[0027] Figure 4 Figure 2 shows that when viewed along line CC Figure 1 A view of an apparatus for processing a substrate;

[0028] Figure 5 is a plan view showing a baking unit according to an embodiment of the present inventive concept;

[0029] Figure 6 is a cross-sectional view illustrating a heat treatment unit performing a heat treatment process according to an embodiment of the present inventive concept;

[0030] FIG. 7( a) is a view showing a heating plate and a heating member according to an embodiment of the present inventive concept when viewed from above;

[0031] FIG7( b) is a diagram showing temperature variations in each of a plurality of zones of a heating member;

[0032] Figure 8 is a graph showing the film thickness in each heating zone when multiple heating zones are controlled at the same temperature;

[0033] Fig. 9A diagram showing the integration of temperature control in a temperature variation diagram according to the concept of the present invention;

[0034] Fig.10 a graph showing the thickness of the film before temperature control, and a graph showing the thickness of the film after temperature control according to a plurality of heating zones; and

[0035] Fig.11 FIG. 4 is a flow chart showing a method for controlling temperature according to the present invention. DETAILED DESCRIPTION

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings to allow those skilled in the art to easily reproduce the present invention. However, the inventive concept can be implemented in various forms and is not limited to the embodiments described herein. In addition, in the following description of the inventive concept, in order to avoid unnecessarily obscuring the subject matter of the inventive concept, a detailed description of known techniques or functions will be omitted. In addition, throughout the accompanying drawings, components performing similar functions and similar operations will be designated by the same reference numerals.

[0037] When a part "includes" a component, the part does not exclude other components, but if there is a specific contrary description, other components may be included. Specifically, it should also be understood that the terms "comprises", "comprising", "includes" or "including", or "having" specify the existence of stated features, quantities, steps, operations, components, parts or combinations thereof, but do not exclude the existence or addition of one or more other features, quantities, steps, operations, components, parts, and / or combinations thereof.

[0038] Unless the context clearly indicates otherwise, the singular form is intended to include the plural form. In addition, the shapes and sizes of elements in the drawings will be exaggerated for more obvious description.

[0039] Hereinafter, the embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. The embodiments of the inventive concept can be modified in various forms, and the scope of the inventive concept should not be interpreted as being limited by the embodiments of the inventive concept described below. The embodiments of the inventive concept are provided to more completely describe the inventive concept to those skilled in the art. Therefore, the shapes of the components in the accompanying drawings, etc. are exaggerated to emphasize a clearer description.

[0040] According to this embodiment, the equipment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat display panel. In particular, according to this embodiment, the equipment can be connected to an exposure device and used to perform a coating process and a developing process. Hereinafter, for example, a wafer is used as a substrate.

[0041] Figure 1-4 A substrate processing apparatus according to an embodiment of the inventive concept is schematically illustrated.

[0042] Reference Figures 1 to 4 , the substrate processing equipment 1 includes a loading port 100, an index module 200, a first buffer module 300, a coating / developing module 400, a second buffer module 500, a pre-exposure / post-exposure processing module 600, and an interface module 700. The loading port 100, the index module 200, the first buffer module 300, the coating / developing module 400, the second buffer module 500, the pre-exposure / post-exposure processing module 600, and the interface module 700 are sequentially arranged in a row along one direction.

[0043] Hereinafter, the direction in which the loading port 100, the index module 200, the first buffer module 300, the coating / developing module 400, the second buffer module 500, the pre / post-exposure processing module 600 and the interface module 700 are set will be referred to as the first direction 12, the direction perpendicular to the first direction 12 when viewed from above will be referred to as the second direction 14, and the direction perpendicular to the first direction 12 and the second direction 14 will be referred to as the third direction 16.

[0044] The substrate 'W' is moved while being received in the cassette 20. In this case, the cassette 20 has a structure sealed from the outside. For example, a front open unified pod (FOUP) having a door at the front side may be used as the cassette 20.

[0045] Hereinafter, the load port 100 , the index module 200 , the first buffer module 300 , the coating / developing module 400 , the second buffer module 500 , the pre / post-exposure processing module 600 , and the interface module 700 will be described in detail.

[0046] The load port 100 has a carrier 120 on which a cassette 20 having a substrate W received therein is placed. A plurality of carriers 120 are provided, and the plurality of carriers 120 are arranged in a row along the second direction 14. Figure 1 In the embodiment, four carriers 120 are provided.

[0047] The index module 200 transfers the substrate 'W' between the cassette 20 placed on the carrier 120 mounted on the port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 has a substantially rectangular parallelepiped shape, has a hollow structure, and is inserted between the loading port 100 and the first buffer module 300. The frame 210 of the index module 200 may be disposed at a lower height than the frame 310 of the first buffer module 300, which will be described below. The index robot 220 and the guide rail 230 are disposed in the frame 210. The index robot 220 has a four-axis driving structure that allows a hand 221 that directly processes the substrate 'W' to be movable and rotatable in the first direction 12, the second direction 14, and the third direction 16. The indexing robot 220 includes a hand 221, an arm 222, a support 223 and a prop 224. The hand 221 is fixedly mounted in the arm 222. The arm 222 has an extendable and rotatable structure. The support 223 is arranged so that the length of the support extends in the third direction 16. The arm 222 is coupled to the support 223 so as to be movable along the support 223. The support 223 is fixedly coupled to the prop 224. The guide rail 230 is arranged so that the length of the guide rail extends in the second direction 14. The prop 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Although not shown, the frame 210 also includes a door opener, which opens and closes the door of the dark box 20.

[0048] The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 has a rectangular parallelepiped shape having a hollow structure and is inserted between the index module 200 and the coating / developing module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are positioned within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are arranged in sequence from the bottom along the third direction 16. The first buffer 320 is positioned at a height corresponding to the coating module 401 of the coating / developing module 400, which will be described below, and the second buffer 330 and the cooling chamber 350 are positioned at a height corresponding to the developing module 402 of the coating / developing module 400, which will be described below. The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350, and the first buffer 320 by a predetermined distance in the second direction 14.

[0049] The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates 'W'. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed inside the housing 331 and are spaced apart from each other along the third direction 16. A substrate 'W' is placed on each support 332. The housing 331 has an opening (not shown) in the direction in which the index robot 220, the first buffer robot 360, and the developing robot 482 of the developing module 402 to be described are disposed, so that the index robot 220, the first buffer robot 360, and the developing robot 482 insert the substrate 'W' into the support 332 disposed inside the housing 331, or take it out from the support 332. The first buffer 320 has a structure substantially similar to that of the second buffer 330. At the same time, the housing 321 of the first buffer 320 has an opening in the direction in which the first buffer robot 360 and the robot 432 positioned in the coating module 401 to be described are disposed. The number of supports 332 disposed in the first buffer zone 320 may be the same as or different from the number of supports 332 disposed in the second buffer zone 330. According to an embodiment, the number of supports 332 disposed in the second buffer zone 330 may be greater than the number of supports 332 disposed in the first buffer zone 320.

[0050] The first buffer robot 360 can transfer the substrate 'W' between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixedly installed in the arm 362. The arm 362 has a retractable structure so that the hand 361 is movable in the second direction 14. The arm 362 is coupled to the support 363 to be linearly movable along the support 363 in the third direction 16. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 can be arranged to extend longer upward or downward. The first buffer robot 360 can be arranged so that the hand 361 is simply driven by two axes along the second direction 14 and the third direction 16.

[0051] The cooling chamber 350 cools the substrate 'W'. The cooling chamber 350 has a shell 351 and a cooling plate 352. The cooling plate 352 has a top surface on which the substrate 'W' is positioned, and a cooling unit 353 that cools the substrate 'W'. Various types such as a cooling type using cooling water and a cooling type using a thermoelectric element may be used as the cooling unit 353. A lift pin assembly (not shown) may be provided in the cooling chamber 350 to position the substrate 'W' on the cooling plate 352. The shell 351 has an opening (not shown) in a direction in which the index robot 220 and the developing robot 482 of the developing module 402 to be described are provided, so that the index robot 220 and the developing robot 482 insert the substrate 'W' into the cooling plate 352, or take it out from the cooling plate 352. In addition, a door (not shown) that opens and closes the aforementioned opening may be provided in the cooling chamber 350.

[0052] The coating / developing module 400 performs a process of coating photoresist on the substrate 'W' before the exposure process, and performs a process of developing the substrate 'W' after the exposure process. The coating / developing module 400 has a substantially rectangular parallelepiped shape. The coating / developing module 400 has a coating module 401 and a developing module 402. The coating module 401 and the developing module 402 can be arranged to be separated from each other in different layers. According to the embodiment, the coating module 401 is positioned above the developing module 402.

[0053] The coating module 401 performs a process of coating a photosensitive liquid, such as a photoresist, on the substrate 'W', and performs a heat treatment process such as heating and cooling the substrate 'W' before and after the resist coating process. The coating module 401 has a resist coating chamber 410, a baking unit 420, and a conveying chamber 430. The resist coating chamber 410, the baking unit 420, and the conveying chamber 430 are sequentially arranged in the second direction 14. Therefore, the resist coating chamber 410 and the baking unit 420 are spaced apart from each other in the second direction 14 with the conveying chamber 430 inserted therebetween. A plurality of resist coating chambers 410 may be arranged along each of the first direction 12 and the third direction 16. In the accompanying drawings, for example, six resist coating chambers 410 are shown. A plurality of baking units 420 may be arranged along each of the first direction 12 and the third direction 16. In the accompanying drawings, for example, six baking units 420 are shown. However, in contrast thereto, a greater number of baking units 420 may be provided.

[0054] The transport chamber 430 is positioned parallel to the first buffer zone 320 of the first buffer module 300 in the first direction 12. The coating robot 432 and the guide rail 433 may be positioned in the transport chamber 430. The transport chamber 430 has a substantially rectangular shape. The coating robot 432 transfers the substrate 'W' between the baking unit 420, the resist coating chamber 410, the first buffer zone 320 of the first buffer module 300, and the first cooling chamber 520 of the second buffer module 500, which will be described below. The guide rail 433 is arranged so that its longitudinal direction is parallel to the first direction 12. The guide rail 433 guides the coating robot 432 so that the coating robot 432 moves linearly in the first direction 12. The coating robot 432 has a hand 434, an arm 435, a support 436, and a pillar 437. The hand 434 is fixedly mounted in the arm 435. The arm 435 has an extendable structure so that the hand 434 is horizontally movable. The support 436 is provided so that the length of the support 436 extends in the third direction 16. The arm 435 is coupled to the support 436 to be linearly movable along the support 436 in the third direction 16. The support 436 is fixedly coupled to the support post 437, and the support post 437 is coupled to the guide rail 433 to be movable along the guide rail 433.

[0055] The resist coating chamber 410 has the same structure. However, the resist coating chamber 410 can adopt different types of photoresists. For example, chemically amplified resist can be used as photoresist. The resist coating chamber 410 coats the photoresist on the substrate 'W'. The resist coating chamber 410 has a shell 411, a support plate 412 and a nozzle 413. The shell 411 has a cup shape with an open upper portion. The support plate 412 is positioned inside the shell 411 and supports the substrate W. The support plate 412 is rotatably arranged. The nozzle 413 supplies the photoresist to the substrate 'W' placed on the support plate 412. The nozzle 413 with a circular tube shape supplies the photoresist to the center of the substrate 'W'. Alternatively, the nozzle 413 has a length corresponding to the diameter of the substrate 'W', and the discharge port of the nozzle 413 can be set in the form of a slot (slit). In addition, the resist coating chamber 410 may further include a nozzle 414 supplying a cleaning liquid such as deionized water to clean the surface of the substrate 'W' coated with the photoresist.

[0056] The baking unit 420 performs heat treatment on the substrate 'W'. For example, the baking unit 420 performs a pre-baking process of heating the substrate 'W' to a specific temperature before coating the photoresist to eliminate organic substances and moisture from the surface of the substrate 'W', or a soft baking process performed after coating the photoresist on the substrate 'W', and performs a cooling process of cooling the substrate 'W' after the heating process.

[0057] Figure 5is a plan view showing a baking unit according to an embodiment of the present inventive concept; and Figure 6 A cross-sectional view illustrating a heat treatment unit performing a heat treatment process in a baking unit according to an embodiment of the present inventive concept;

[0058] Reference Figure 5 and Figure 6 , the baking unit 420 may include a process chamber 423 , a cooling plate 422 , and an apparatus (substrate processing device) 800 for processing a substrate 'W'.

[0059] The process chamber 423 provides a heat treatment space 802 therein. The process chamber 423 may be configured in the shape of a rectangular parallelepiped. The cooling plate 422 may cool the substrate subjected to heat treatment by the heat treatment unit 421. The cooling plate 422 may be positioned in the heat treatment space 802. The cooling plate 422 may be configured in the shape of a circular plate. The cooling plate 422 may be provided with a cooling unit therein, such as cooling water or a thermoelectric element. For example, the cooling plate 422 may cool the heated substrate to room temperature.

[0060] The substrate treating apparatus 800 performs heat treatment with respect to the substrate 'W.' The substrate treating apparatus 800 may include a housing 860 , a heating plate 810 , a heating member 830 , an external gas supply unit 840 , an exhaust member 870 , a temperature measuring member 910 , and a controller unit 920 .

[0061] The housing 860 provides a processing space 802 in which a heat treatment process is performed on the substrate 'W'. The housing 860 includes a lower body 862, an upper body 864, and a driver (not shown).

[0062] The lower body 862 may be configured in the shape of a barrel having an open upper portion. The lower body 862 has a heating plate 810 and a heating member 830 positioned therein. The lower body 862 includes two layers of heat-insulating covers 862a and 862b to prevent thermal deformation of equipment positioned at the peripheral portion of the heating plate 810. The two layers of heat-insulating covers 862a and 862b minimize exposure of equipment surrounding the heating plate 810 to higher temperatures generated by the heating member 830. The two layers of heat-insulating covers 862a and 862b include a main heat-insulating cover 862a and a secondary heat-insulating cover 862b, and the main heat-insulating cover 862a and the secondary heat-insulating cover 862b are spaced apart from each other.

[0063] The upper body 864 can be arranged in the shape of a barrel with an open lower part. When the upper body 864 is combined with the lower body 862, the processing space 802 is formed between the upper body 864 and the lower body 862. The upper body 864 has a diameter larger than the diameter of the lower body 862. The upper body 864 is positioned above the lower body 862. The upper body 864 is movable in the vertical direction by a driver. When the upper body 864 moves in the vertical direction, the upper body 864 can be moved to a lifting position and a lowering position. In this case, the lifting position is a position where the upper body 864 is spaced apart from the lower body 862, and the lowering position is a position where the upper body 864 contacts the lower body 862. At the lowering position, the gap between the upper body 864 and the lower body 862 is blocked. Therefore, when the upper body 864 moves to the lowering position, the processing space 802 is formed by the upper body 864, the lower body 862 and the heating plate 810.

[0064] Although not shown, the housing 860 may include a sealing member to prevent external air from being introduced into the processing space. For example, the sealing member may seal a gap between the lower body 862 and the upper body 864.

[0065] The heating plate 810 can be positioned in the heat treatment space 802. The heating plate 810 is positioned on one side of the cooling plate 422. The heating plate 810 is arranged in a circular shape. The top surface of the heating plate 810 is implemented as a support area, and the substrate 'W' is placed in the support area. A plurality of pin holes 812 are formed in the top surface of the heating plate 810. For example, three pin holes 812 can be provided. The pin holes 812 can be spaced apart from each other in the circumferential direction of the heating plate 810. The pin holes 812 can be spaced apart from each other at equal distances. A lifting pin (not shown) is provided in each pin hole 812. The lifting pin is movable in the vertical direction by a driving member (not shown).

[0066] The heating member 830 heats the substrate 'W' placed on the heating plate 810 to a preset temperature. A plurality of heating members 830 are disposed in mutually different regions of the heating plate 810 to perform heat treatment with respect to respective regions of the substrate 'W'. The heating member 830 may include a plurality of heating zones 830a to 830g. The configuration of the heating member 830 will be described below with reference to FIG. 7(a).

[0067] The temperature measuring member 910 may be connected to the heating member 830 to measure the temperature in the plurality of heating zones 830a to 830g included in the heating member 830. The temperature measuring member 910 measures the temperature of the substrate 'W' contacting the plurality of heating zones 830a to 830g and transmits the measured temperature information to the control unit 920. Figure 6It is shown that the temperature measuring member 910 is connected to the control unit 920 by wire, but the temperature measuring member may be connected to the control unit 920 by wire or wirelessly to transmit / receive data.

[0068] The control unit 920 may control the heating member 830. The control unit 920 may independently control the temperature in each of the plurality of heating zones 830a to 830g included in the heating member 830. The control unit 920 may control the temperature in only some of the heating zones 830a to 830g included in the heating member 830. Hereinafter, a method of controlling the temperature of the heating member 830 by the control unit 920 will be described in detail.

[0069] 7( a ) is a view showing a heating plate 810 and a heating member 830 according to an embodiment of the present inventive concept when viewed from above; and FIG. 7( b ) is a temperature variation diagram in each of a plurality of zones 830 a to 830 g of the heating member 830 .

[0070] FIG7 (a) is a view showing a heating plate 810 and a heating member 830 according to an embodiment of the present inventive concept when viewed from above. Referring to FIG7 (a), the heating plate 810 may include a heating member 830. The heating member 830 may be configured to include a plurality of heating zones 830a to 830g. Seven heating zones 830a to 830g may be provided. The number of the plurality of heating zones is not limited thereto, but may be formed in a distributed manner in different regions within two or more ranges of the plate. Independent temperature control may be performed relative to each heating zone of the plurality of heating zones 830a to 830g by a heating member positioned in each heating zone.

[0071] FIG7( b) is a graph showing the temperature when a plurality of heating zones 830 a to 830 g are heated to the preset temperature shown in FIG7( a). The temperature of the substrate 'W' drops for a specified time, rises after a baking process, and is maintained within a specified range from a specified time point. In this case, the section in which the temperature drops can be defined as a temperature dropping section, the section in which the temperature rises can be defined as a temperature increasing section, and the section in which the temperature is maintained within a specified range can be defined as an annealing section. In other words, when the temperature of the substrate 'W' drops and then rises, the section until the temperature of the substrate 'W' reaches room temperature can be defined as a dynamic state (dynamic section), and the subsequent section can be defined as a static state (static section). Such a dynamic state can be a temperature section starting from when the substrate is placed on a heating plate heated to a specific temperature until the temperature of the heating plate reaches normal temperature.

[0072] 7(b), although the temperatures applied to the plurality of heating zones are uniformly controlled to be preset temperatures, each of the plurality of heating zones may display different temperatures due to interference or other reasons as described above. Referring to FIG. 7(b), the dynamic sections of the first zone 830a and the sixth zone 830f of the plurality of heating zones 830a to 830g may indicate that the temperature change is greater than that of the other heating zones. The inventive concept discloses a method of controlling temperature using a temperature change graph in a dynamic section.

[0073] Figure 8 Graph showing the thickness of a thin film in each heating zone (thickness of a thin film) when a plurality of heating zones are controlled at the same temperature. In this case, the thickness of a thin film may be the thickness of a thin film formed on a substrate, or the thickness of a photoresist. Figure 8 The horizontal axis in the graph represents the multiple heating zones in the heating component 830. Figure 8 The vertical axis in the graph represents the thin film thickness (THK) of the substrate.

[0074] In theory, the film thickness on the substrate should be uniform in all the plurality of heating zones. However, in reality, the film thickness in the plurality of heating zones is different due to the influence of interference. According to the inventive concept, temperature control is selectively performed by selecting a heating zone and a target film thickness value, which heating zone shows a specific value or shows a large error between the plurality of film thickness values ​​of the plurality of heating zones 830a to 830g, and the plurality of film thickness values ​​are obtained as a result.

[0075] According to the method for selecting a heating zone to be subjected to selective temperature control, an average value of film thickness values ​​is established in all heating zones based on a profile of film thickness, and a heating zone showing a larger error value between the average value and the film thickness in each heating zone can be selected.

[0076] Alternatively, according to the method for selecting a heating zone to be subjected to selective temperature control, a heating zone can be selected, wherein, in a temperature change diagram of a substrate for each of a plurality of heating zones, a heating zone shows a large error value between the temperature in a normal state and the temperature in a dynamic state, which is caused by temperature control of the substrate.

[0077] According to the embodiment, according to the method for selecting a heating zone to be subjected to selective temperature control, when the error is 5% or more, the heating zone may be selected based on an average value or a temperature in a normal state.

[0078] However, this is provided only for illustrative purposes, and the error ratio can be freely selected by the user. For example, temperature control can be performed with respect to a plurality of heating zones. The following description will be made based on the assumption that the first zone 830a and the sixth zone 830f are selected from a plurality of heating zones as the heating zones to be temperature controlled.

[0079] After selecting the heating zones to be temperature controlled, the current film thickness and the target film thickness value are calculated relative to each selected heating zone. When the current film thickness of the relevant zone is not uniform, the average value of the current film thickness can be calculated as the current film thickness of the relevant zone.

[0080] The temperature control is performed by using the dynamic section in the temperature profile of the heating zone to be temperature controlled. The area of ​​the dynamic section in the temperature profile indicates the calories lost by the plate (calorie loss). According to the inventive concept, the calorie loss after the temperature change can be established by calculating the ratio between the calories lost by the plate and the film thickness.

[0081] This can be expressed in the following formula.

[0082] formula

[0083] THK 0 :ΔTHK=S:ΔS

[0084] THK 0Can represent the current film thickness, ΔTHK can represent the change required to reach the target film thickness, S can represent the calories lost at the current temperature, and ΔT can represent the difference between the target calorie loss and the current calorie loss. The formula means that the ratio of the current film thickness to the target film thickness is equal to the ratio of the current calorie loss of the board to the calorie loss after temperature control.

[0085] The above description is expressed in the following formula. In the following formula, THK can represent the film thickness, S can represent the caloric loss of the board, and K x It can represent the influence coefficient of the area adjacent to the specific area when controlling the specific area. T Can represent the target film thickness, S 0 can represent the calorie loss before the temperature of the control plate, and S 1 Can represent the calorie loss after temperature control of the plate.

[0086] formula

[0087]

[0088] The caloric loss after temperature control to obtain a desired film thickness can be established using the formula described above. When the caloric loss of the plate after temperature control is established, the temperature to be controlled can be set using the following formula.

[0089] This will be achieved by utilizing Fig. 9 to describe it with a graphic.

[0090] according to Fig. 9 The calorie loss of the plate can be expressed as the value obtained by integrating the dynamic section function of the temperature change diagram in the following formula.

[0091] formula

[0092]

[0093] Where S down It can represent the calorie loss of the plate in the temperature drop section of the dynamic section. down The caloric loss that occurs immediately after the pin is down and the substrate contacts the plate. up Represents the calorie loss of the plate in the temperature rise section of the dynamic section. p It can represent the start time of the pin going down. u It can represent the starting time of the temperature rise in the dynamic section. s It can represent the time to reach the normal temperature, T s Can represent process temperature. Fig.10, the process temperature can be set to 400°. α can be the value obtained by subtracting the target temperature from the process temperature T target can represent the target temperature to be lowered. β can be δ can represent the rise coefficient or the fall coefficient. γ can be T target (=T t ), which may be the target temperature to be lowered.

[0094] The temperature to be controlled in the relevant heating zone may be calculated by using the formula described above. However, the present inventive concept is not limited thereto, but temperature control may be performed with respect to each heating zone using various methods.

[0095] According to the embodiment, the control unit 920 may include a proportional-integral-differential (PID) controller. Temperature control can be finely performed by using the PID controller included in the control unit 920, so that temperature control is performed more accurately. The PID controller can use the slope of the temperature change measured by the temperature measuring member 910 to determine the temperature drop section, the temperature rise section, and the annealing section.

[0096] When the slope of the temperature change is less than the value in the preset range, the current section is determined as the temperature drop section. When the slope of the temperature change exceeds the preset range, the current section is determined as the temperature rise section. When the slope of the temperature change is within the preset range, the current section is determined as the annealing section. In the temperature drop section, the PID controller that displays a larger P gain value in the PID controller can be connected to the heating member 830 to be controlled. In the temperature rise section, the PID controller that displays a larger P gain value can be connected to the heating member 830 to be controlled. In the annealing section, the PID controller that displays a larger I gain value in the PID controller can be connected to the heating member 830 to be controlled. In the annealing section, the PID controller that displays a larger D gain value in the PID controller can be connected to the heating member 830 to be controlled.

[0097] Fig.10 The figure shows the film thickness before temperature control and the film thickness after temperature control according to multiple heating zones. Fig. 9 It can be recognized that the film thickness in the first zone and the sixth zone becomes an average value by temperature control in the dynamic section. In addition, it can be recognized that the second zone to the fifth zone and the seventh zone, which are the remaining zones of the plurality of heating zones, are almost unchanged. As described above, according to the method for controlling temperature conceived by the present invention, the film thickness of the substrate can be uniform.

[0098] Fig.11 FIG. 4 is a flow chart showing a method for controlling temperature according to the present invention.

[0099] According to the method for controlling temperature conceived by the present invention, the temperature of the substrate is measured relative to each heating zone of a plurality of heating zones (S10). The thickness profile of the film and the photoresist liquid corresponding to the measurement results of each heating zone of the plurality of heating zones is formed (S20). When the thickness profile is formed, the thickness profile is compared with a reference value to select the heating zone to be controlled (S30). The comparison can be performed based on the average value of the film thickness or the photoresist liquid thickness, or a reference value. When selecting the heating zone to be controlled, the desired temperature control can be achieved by the calorie loss shown in the temperature map of the selected heating zone, the desired thickness of the film or the photoresist liquid, and the current thickness. The desired temperature control can be achieved by the control based on the PID controller.

[0100] According to the inventive concept, the uniformity of thickness is corrected by adjusting the calories in the dynamic section of the carbon bonded structure affected by temperature during baking. The inventive concept can be used in a baking process with a target temperature. The inventive concept can be used in a technical field where thickness adjustment is required.

[0101] According to an embodiment of the inventive concept, the thickness of a thin film formed on a substrate may be made uniform by partially adjusting the temperature of a heating member.

[0102] According to an embodiment of the inventive concept, the thickness of a thin film formed on a substrate may be made uniform by adjusting the thickness of a thin film corresponding to each of a plurality of heating zones of a heating member.

[0103] The effects of the present inventive concept are not limited to the above effects. Any other effects not mentioned herein will be clearly understood by those skilled in the art to which the present inventive concept belongs from the following description.

[0104] Although the present invention has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention. Therefore, it should be understood that the above embodiments are not restrictive, but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a housing having a processing space inside the housing; a plate supporting the substrate inside the housing; a heating member disposed inside the plate to heat the substrate and comprising a plurality of heating zones; a temperature measuring member that measures a temperature of the substrate relative to each of the plurality of heating zones of the heating member; and a control unit that controls the temperature of the heating member in a dynamic section of the temperature variation diagram measured in the temperature measuring member; wherein the control unit forms a profile of the thickness of the thin film on the substrate, the profile corresponding to the temperature measurement result of the temperature measurement member for each of the plurality of heating zones; The dynamic section is a temperature section starting from when the substrate is placed on the plate heated to a specific temperature until the temperature of the plate reaches a normal temperature; wherein the control unit: selects a heating zone showing a specific value or a heating zone showing a large error from a reference value based on the profiles of the film thickness of the plurality of heating zones; and performs temperature control using a temperature map in the selected heating zone and a film thickness value corresponding to the film thickness value corresponding to the selected heating zone; The control unit controls the temperature of the selected heating zone using the calorie loss of the plate, which is displayed in a temperature diagram of the selected heating zone, and the current film thickness and the desired film thickness of the selected heating zone.

2. The device according to claim 1, wherein: The control unit performs temperature control with respect to each of the plurality of heating zones of the heating member so as to make the thickness of the thin film on the substrate uniform.

3. The device according to claim 1 or 2, wherein: The temperature of the heating member in the control unit is controlled by adjusting the gain of a proportional-integral-derivative (PID) controller connected to the heating member.

4. A method for processing a substrate by controlling a heating member, the heating member being disposed at a lower portion of a plate supporting the substrate inside a housing, and the heating member comprising a plurality of heating zones, the method comprising: measuring a temperature of the substrate relative to each of the plurality of heating zones of the heating member; performing temperature control for a dynamic section of a temperature variation graph displayed as a result of the measurement; and forming a profile of the thickness of the thin film on the substrate, the profile corresponding to the temperature measurement results for each of the plurality of heating zones of the heating member, The method further comprises: selecting a heating zone showing a specific value or a heating zone showing a large error from a reference value based on the profile of the thickness of the thin film on the substrate for the plurality of heating zones; and performing temperature control for the selected heating zone by using a temperature map in the selected heating zone and a film thickness value corresponding to the thickness value of the thin film corresponding to the selected heating zone; Wherein, the method further comprises: controlling the temperature of the selected heating zone using the calorie loss of the plate and the current film thickness and the desired film thickness of the selected heating zone, the calorie loss of the plate being displayed in a temperature map of the selected heating zone; The dynamic section is a temperature section starting from when the substrate is placed on the plate heated to a specific temperature until the temperature of the plate reaches a normal temperature.

5. The method according to claim 4, further comprising: Temperature control is performed with respect to each of the plurality of heating zones of the heating member so as to make the thickness of the thin film uniform.

6. The method according to claim 4 or 5, further comprising: The temperature of the heating member is controlled by adjusting the gain of a PID controller connected to the heating member.

7. A method for processing a substrate, the method comprising: forming a thin film of the photoresist liquid on the substrate by heating the substrate coated with the photoresist liquid to evaporate a solvent contained in the photoresist liquid; as well as heating the substrate by partially controlling the temperature of a plate so that the thickness of the film of the photoresist liquid is uniform; forming a thickness profile of the thin film of the photoresist liquid based on a temperature change of the substrate; as well as controlling temperature using the thickness profile of the thin film of the photoresist liquid; Wherein, the method further comprises: adjusting the temperature for a dynamic section of the temperature variation diagram of the substrate; Wherein, the method further comprises: controlling the temperature using a desired photoresist liquid thickness, a current photoresist liquid thickness, a current temperature of the substrate, and a calorie loss of the plate, the calorie loss of the plate being displayed in a temperature map of the substrate; The dynamic section is a temperature section starting from when the substrate is placed on the plate heated to a specific temperature until the temperature of the plate reaches a normal temperature.

8. The method according to claim 7, wherein: Temperature control is performed by adjusting the gains of the PID controller.

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