Display substrate, manufacturing method thereof, and display device

Abstract

The present disclosure provides a display substrate, comprising: a base substrate having an opening area, a transition area surrounding the opening area, and a pixel area surrounding the opening area; at least one ink-blocking dam located in the transition area and surrounding the opening area; and at least one conductive film layer located in the transition area, wherein the orthographic projection of the conductive film layer on the base substrate overlaps with the orthographic projection of the ink-blocking dam on the base substrate. In the technical solution of the present disclosure, the conductive film layer is used to absorb heat and conduct heat to reduce the heat on the ink-blocking dam; during the laser lift-off process, due to the presence of the conductive film layer, it can absorb the surrounding heat, thereby reducing the heat absorbed by the ink-blocking dam, reducing the heat on the ink-blocking dam, reducing the amount of gas overflow from the ink-blocking dam, or even eliminating gas overflow, effectively avoiding the phenomenon of film separation and shedding at the ink-blocking dam, and improving the product yield.

Description

Technical Field

[0001] The present invention relates to the field of display, and in particular to a display substrate, a preparation method thereof, and a display device. Background Art

[0002] With the development of display technology, in order to achieve a higher screen-to-body ratio, a series of special-shaped display screens have emerged. For example, the currently popular "bangs screen", "water drop screen" and "punch screen". Among them, "punch screen" refers to a display screen in which the display area (also called AA area) includes a physical hole. The area where the physical hole is located can also be called the opening area. The display area also includes a transition area surrounding the opening area and a pixel area surrounding the transition area. In actual applications, it was found that the film layer structure in the transition area is prone to the problem of film separation (Peeling), resulting in a low product yield. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a display substrate, a preparation method thereof, and a display device.

[0004] In a first aspect, an embodiment of the present disclosure provides a display substrate, comprising:

[0005] A substrate has an opening area, a transition area surrounding the opening area, and a pixel area surrounding the opening area;

[0006] at least one ink blocking dam, located in the transition area and surrounding the opening area;

[0007] At least one conductive film layer is located in the transition region, and an orthographic projection of the conductive film layer on the base substrate overlaps with an orthographic projection of the ink blocking dam on the base substrate.

[0008] In some embodiments, the orthographic projection of the conductive film layer on the substrate and the orthographic projection of the ink blocking dam on the substrate completely overlap;

[0009] Alternatively, the orthographic projection of the ink blocking dam on the base substrate is located within a region enclosed by the orthographic projection of the conductive film layer on the base substrate.

[0010] In some embodiments, the display substrate further comprises:

[0011] Thin film transistors, located in the pixel area;

[0012] a planarization layer, located on a side of the thin film transistor facing away from the substrate;

[0013] a first electrode, located on a side of the planarization layer facing away from the substrate;

[0014] The pixel defining layer is located on a side of the first electrode facing away from the base substrate.

[0015] In some embodiments, the ink blocking dam comprises:

[0016] A first deposition film layer, made of the same material as the planarization layer and disposed in the same layer;

[0017] And / or, the second deposition film layer is made of the same material as the pixel definition layer and is disposed in the same layer.

[0018] In some embodiments, the display substrate further comprises:

[0019] a spacer dam, located on a side of the pixel defining layer facing away from the base substrate;

[0020] The ink blocking dam further comprises:

[0021] The third deposition film layer is made of the same material as the spacer dam and is provided in the same layer.

[0022] In some embodiments, the at least one conductive film layer includes: at least one first conductive film layer, the first conductive film layer is made of the same material as one of the gate, source / drain electrode, active layer, and capacitor plate layer of the thin film transistor and is arranged in the same layer.

[0023] In some embodiments, the at least one conductive film layer includes: a second conductive film layer, the second conductive film layer is made of the same material as the first electrode and is provided in the same layer.

[0024] In some embodiments, the at least one conductive film layer includes: at least one first conductive film layer and a second conductive film layer;

[0025] The first conductive film layer is made of the same material as one of the gate electrode, source / drain electrode, active layer, and capacitor plate layer of the thin film transistor and is provided in the same layer;

[0026] The second conductive film layer is made of the same material as the first electrode and is provided in the same layer.

[0027] In some embodiments, a pixel accommodating hole is formed on the pixel defining layer, and the display substrate further comprises:

[0028] an organic functional layer, located in the pixel accommodating hole;

[0029] a second electrode, located on a side of the organic functional layer facing away from the base substrate;

[0030] The encapsulation layer is located on a side of the second electrode facing away from the base substrate.

[0031] In some embodiments, the ink-blocking dam includes: a first ink-blocking dam and a second ink-blocking dam;

[0032] The second Mozi dam surrounds the opening area, and the first Mozi dam is located on a side of the second Mozi dam facing away from the opening area and surrounds the second Mozi dam;

[0033] There is a first distance between the surface of the first ink-blocking dam facing away from the substrate and the substrate, and there is a second distance between the surface of the second ink-blocking dam facing away from the substrate and the substrate, and the first distance is smaller than the second distance.

[0034] In some embodiments, the first ink-blocking dam is spaced apart from the second ink-blocking dam, and the ink-blocking dam further comprises: a region located between the first ink-blocking dam and the second ink-blocking dam;

[0035] The orthographic projection of the conductive film layer on the base substrate is located between the orthographic projection of the first Mozi dam on the base substrate and the orthographic projection of the second Mozi dam on the base substrate.

[0036] In a second aspect, an embodiment of the present disclosure further provides a display device, comprising the display substrate provided in the first aspect.

[0037] In a third aspect, the present disclosure further provides a method for manufacturing a display device, comprising:

[0038] Providing a substrate having an opening area, a transition area surrounding the opening area, and a pixel area surrounding the opening area;

[0039] forming at least one ink blocking dam on the substrate, wherein the ink blocking dam is located in the transition area and surrounds the opening area;

[0040] At least one conductive film layer is formed on the base substrate and is located in the transition region. The orthographic projection of the conductive film layer on the base substrate overlaps with the orthographic projection of the ink blocking dam on the base substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1a A schematic diagram of a structure in a transition region of a display substrate in the related art;

[0042] Figure 1b Schematic diagram of rainbow patterns in the transition zone;

[0043] Figure 2a A schematic top view of a display substrate provided in an embodiment of the present disclosure;

[0044] Figure 2b for Figure 2a Enlarged schematic diagram of the middle transition zone;

[0045] Figure 3 for Figure 2b A schematic cross-sectional view in the A-A' direction;

[0046] Figure 4 A schematic cross-sectional view of a portion of a pixel region in an embodiment of the present disclosure;

[0047] Figure 5 is another schematic cross-sectional view of a portion of a pixel region in an embodiment of the present disclosure;

[0048] Figure 6 is another cross-sectional schematic diagram of a portion of a pixel region in an embodiment of the present disclosure;

[0049] Figure 7 is another cross-sectional schematic diagram of a portion of a pixel region in an embodiment of the present disclosure;

[0050] Figure 8a for Figure 2b Another cross-sectional schematic diagram along the A-A' direction;

[0051] Figure 8b for Figure 2b Another cross-sectional schematic diagram along the A-A' direction;

[0052] Figure 9a for Figure 2b Another cross-sectional schematic diagram along the A-A' direction;

[0053] Figure 9b for Figure 2b Another cross-sectional schematic diagram along the A-A' direction;

[0054] Figure 10 for Figure 2b Another cross-sectional schematic diagram along the A-A' direction;

[0055] Figure 11 for Figure 2b Another cross-sectional schematic diagram along the A-A' direction;

[0056] Figure 12 A flow chart of a method for preparing a display substrate provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0057] In order to enable those skilled in the art to better understand the technical solution of the present invention, a display substrate, a preparation method thereof, and a display device provided by the present invention are described in detail below with reference to the accompanying drawings.

[0058] In related technologies, after completing the preparation of various functional film layers in the pixel area, the pixel area needs to be encapsulated. During the encapsulation process, an organic encapsulation film needs to be prepared through an inkjet printing (IJP) process. To ensure the encapsulation yield, an ink dam (IJP dam) is generally formed in the transition area to prevent the ink from flowing into the opening area during the IJP process. The ink dam is generally made of a deposited organic material and has a certain thickness.

[0059] After the display substrate is fabricated, it must be separated from the glass substrate through a laser lift-off process. During the laser lift-off process, thick ink dams absorb significant energy, generating outgassing. This can cause film separation at the corners of the dams, leading to growing dark spots on the display. In severe cases, the display can fail, impacting product yield.

[0060] Figure 1a It is a schematic diagram of a structure in the transition area of ​​a display substrate in the related art. Figure 1b This is a schematic diagram of the rainbow pattern in the transition zone, such as Figure 1a and Figure 1b As shown, in the related art, at least one ink barrier dam 2 is formed in the transition region A2, with another film layer 3 disposed between the ink barrier dam 2 and the base substrate 1. The ink barrier dam 2 is formed of a deposited organic material and has a certain thickness. During the laser lift-off process, the thicker ink barrier dam 2 easily absorbs a large amount of energy, generating outgassing. The outgassing causes bulging of the film layer 4 covering the surface of the ink barrier dam 2 and causes the film layer 4 to fall off at the corners Q of the ink barrier dam 2, resulting in the appearance of growing dark spots on the display.

[0061] exist Figure 1a and Figure 1b In the situation shown, two ink-blocking dams 2 are drawn as an example. Film separation problems occur at the corners of the two ink-blocking dams 2. The detached film layer 4 is pulled due to stress, resulting in obvious rainbow patterns (also called dam rainbow patterns) in the part between the two ink-blocking dams 2. In severe cases, the film layer 4 will fall off completely, affecting the product yield.

[0062] In order to solve the above technical problems, the embodiments of the present disclosure provide corresponding solutions. Figure 2a A schematic top view of a display substrate provided in an embodiment of the present disclosure is shown. Figure 2b for Figure 2a Enlarged schematic diagram of the middle transition zone, Figure 3 for Figure 2b A cross-sectional diagram in the A-A' direction, as shown in Figures 2a to 3As shown, the display substrate includes: a base substrate 1, at least one ink blocking dam 2 and at least one conductive film layer 5.

[0063] The base substrate 1 comprises an aperture area A1, a transition area A2 surrounding the aperture area A1, and a pixel area A3 surrounding the aperture area A1. The aperture area A1 is a region formed with a physical hole, which can be formed by laser cutting. A camera or sensor structure can be positioned beneath the physical hole. The aperture area A1 can be a regular or irregular shape, such as a circle, ellipse, triangle, rectangle, or polygon. The shape of the aperture area A1 is not limited by the technical solution of this disclosure. In some embodiments, the base substrate 1 is a flexible substrate.

[0064] The ink barrier dam 2 is located in the transition area A2 and surrounds the opening area A1. On the one hand, it is used to prevent the ink from flowing into the opening area A1 during the IJP process. On the other hand, it is used to prevent impurities such as water vapor and oxygen in the external air from invading the pixel area A3 during the process of cutting to form the physical hole. In the transition area A2, the number of ink barrier dams 2 can be one, two, or more, and can be designed according to actual needs. Figure 2a and Figure 3 Only two ink blocking dams 2 are shown as examples.

[0065] The conductive film layer 5 is located in the transition area A2. The orthographic projection of the conductive film layer 5 on the base substrate 1 overlaps with the orthographic projection of the ink blocking dam 2 on the base substrate 1. The conductive film layer 5 is used to absorb heat and conduct heat to reduce the heat on the ink blocking dam 2.

[0066] During the laser lift-off process, due to the presence of the conductive film layer 5, it can absorb the surrounding heat, so that the heat absorbed by the ink-blocking dam 2 is reduced (that is, the heat on the ink-blocking dam 2 is reduced), and the amount of gas overflow from the ink-blocking dam 2 is reduced or even eliminated, which can effectively avoid the separation and falling off of the film layer 4 at the ink-blocking dam 2, thereby improving the product yield.

[0067] In the embodiment of the present disclosure, there are two specific ways to reduce the heat on the ink barrier dam 2 by using the conductive film layer 5: first, the conductive film layer 5 is located between the ink barrier dam 2 and the base substrate 1, and can block and absorb part of the laser (energy) during the laser lift-off process, so that the energy reaching the ink barrier dam 2 is reduced, the energy absorbed by the ink barrier is reduced, and the heat on the ink barrier dam 2 is reduced; second, the conductive film layer 5 is in contact with the ink barrier dam 2, and the conductive film layer 5 achieves heat conduction through contact to reduce the heat on the ink barrier dam 2. Figure 3 The figure only shows an example of the conductive film layer 5 being located between the ink blocking dam 2 and the base substrate 1. In the following embodiments, two specific implementations of reducing the heat on the ink blocking dam 2 will be described in detail.

[0068] In some embodiments, the orthographic projection of the conductive film layer 5 on the base substrate 1 and the orthographic projection of the ink blocking dam 2 on the base substrate 1 completely overlap; in actual applications, it is found that the ink blocking dam 2 is the starting position for film layer separation, so the orthographic projection of the conductive film layer 5 on the base substrate 1 and the orthographic projection of the ink blocking dam 2 on the base substrate 1 are designed to completely overlap, which can fundamentally reduce the heat on the ink blocking dam 2.

[0069] In some embodiments, the orthographic projection of the ink-blocking dam 2 on the base substrate 1 is located within the area enclosed by the orthographic projection of the conductive film layer 5 on the base substrate 1. That is, the orthographic projection of the conductive film layer 5 on the base substrate 1 completely covers the orthographic projection of the ink-blocking dam 2 on the base substrate 1. When the orthographic projection area of ​​the conductive film layer 5 on the base substrate 1 is larger than the orthographic projection area of ​​the ink-blocking dam 2 on the base substrate 1, the orthographic projection of the conductive film layer 5 on the base substrate 1 not only completely covers the orthographic projection of the ink-blocking dam 2 on the base substrate 1, but also covers the orthographic projection of the peripheral portion of the ink-blocking dam 2 on the base substrate 1. In this case, the thermal conductivity is improved, further reducing the heat on the ink-blocking dam 2. For example, the orthographic projection of the conductive film layer 5 on the base substrate 1 overlaps with the transition area A2.

[0070] The above situation is merely illustrative and does not limit the technical solution of the present disclosure. In the embodiment of the present disclosure, the heat on the ink blocking dam 2 can be reduced to a certain extent by simply ensuring that the orthographic projection of the conductive film layer 5 on the base substrate 1 overlaps with the orthographic projection of the ink blocking dam 2 on the base substrate 1.

[0071] Figure 4 is a cross-sectional schematic diagram of a portion of a pixel region in an embodiment of the present disclosure, such as Figure 4 As shown, a thin film transistor T, a planarization layer 8 located on the side of the thin film transistor T facing away from the substrate 1, a first electrode 11 located on the side of the planarization layer 8 facing away from the substrate 1, and a pixel defining layer 9 located on the side of the planarization layer 8 facing away from the substrate 1 are provided in the pixel area A3.

[0072] In some embodiments, a pixel accommodating hole is formed on the pixel defining layer 9, and the display substrate further includes: an organic functional layer 12 located in the pixel accommodating hole, a second electrode 13 located on the side of the organic functional layer 12 facing away from the base substrate 1, and an encapsulation layer 17 located on the side of the second electrode 13 facing away from the base substrate 1.

[0073] The first electrode 11, organic functional layer 12, and second electrode 13 stacked in the region where each pixel-accommodating hole is located form an organic light-emitting diode 10 (OLED). The organic functional layer 12 includes at least an organic light-emitting layer and may optionally include an electron transport layer, a hole transport layer, an electron blocking layer, a hole blocking layer, and other structures. The various film layers in the organic functional layer 12 can be prepared using processes such as IJP and evaporation, and the specific process is not described in detail here.

[0074] The encapsulation layer 17 generally includes alternating organic sub-encapsulation layers 19 and inorganic sub-encapsulation layers 18a and 18b. For example, the encapsulation layer 17 is a three-layer stacked structure, specifically including: two inorganic sub-encapsulation layers 18a and 18b, and an organic encapsulation layer 19 located between the two inorganic sub-encapsulation layers 18a and 18b.

[0075] Figure 5 is another cross-sectional schematic diagram of a portion of a pixel in an embodiment of the present disclosure, such as Figure 5 As shown, Figure 4 The difference is that Figure 5 The illustrated film layer stack structure within pixel region A3 includes a gate electrode 15a, a capacitor plate layer 15b, two gate insulation layers 6a and 6b, two interlayer dielectric layers 7a and 7b, two source and drain electrodes 16a and 16b, and two planarization layers 8a and 8b. The capacitor plate in capacitor plate layer 15b can form a capacitor with another capacitor substrate C1 located in another layer (the figure exemplifies that the other capacitor substrate C1 is provided on the same layer as the gate electrode 15a).

[0076] Figure 6 is another cross-sectional schematic diagram of a portion of a pixel region in an embodiment of the present disclosure, such as Figure 6 As shown, Figure 4 and Figure 5 The thin film transistor T shown in FIG is a top-gate thin film transistor. The difference is that Figure 6 The thin film transistor T shown in FIG is a bottom-gate thin film transistor, that is, the gate electrode 15 is located between the active layer 14 and the base substrate 1 .

[0077] Figure 7 is another cross-sectional schematic diagram of a portion of a pixel region in an embodiment of the present disclosure, such as Figure 7 As shown, Figures 4 to 6 The difference is that Figure 7 In the illustrated case, a spacer dam 20 (PS dam) is provided on the side of the pixel defining layer 9 facing away from the base substrate 1 . The spacer dam is used to support a fine metal mask (FMM) for evaporation during the preparation of the organic functional layer 12 .

[0078] exist Figure 7 In the case shown, the organic functional layer 12 is prepared by an evaporation process; during the evaporation process, since the FMM is located on the spacer dam, there will be a certain gap between the FMM and the pixel defining layer 9, so not only will the organic functional material be deposited in the pixel accommodating hole, but also on the surface of the pixel defining layer and around the pixel accommodating hole. Organic functional materials will also be deposited.

[0079] It should be noted that when no PS dam is provided on the pixel defining layer 9, an evaporation process can also be used to prepare the organic functional layer 12. In the embodiment of the present disclosure, the correspondence between the TFT type and whether the organic functional layer 12 is prepared by the evaporation process or the IJP process is not limited.

[0080] In some embodiments, the organic functional layer may also be laid as a whole layer, in which case no corresponding drawings are given.

[0081] In the above examples, a gate insulating layer 6 is provided between the gate 15 and the active layer 14 , and an interlayer dielectric layer 7 is provided between the source / drain electrode 16 and the active layer 14 .

[0082] It should be noted that Figures 4 to 7 The stacked structure of the inner film layer of the pixel area A3 shown is only some optional embodiments of the technical solution of the present disclosure and does not limit the technical solution of the present disclosure. In the technical solution of the present disclosure, the stacked structure of the inner film layer of the pixel area A3 can also adopt other forms, which will not be listed one by one here.

[0083] Figure 8a for Figure 2b Another cross-sectional diagram along the A-A' direction, Figure 8b for Figure 2b Another cross-sectional diagram along the A-A' direction, Figure 9a for Figure 2b Another cross-sectional diagram along the A-A' direction, Figure 9b for Figure 2b Another cross-sectional schematic diagram along the A-A' direction, Figure 10 for Figure 2b Another cross-sectional schematic diagram along the A-A' direction, as shown in Figures 8 to 10, shows that the ink blocking dam includes: a first stacking film layer 201 and / or a second stacking film layer 202, wherein the first stacking film layer 201 is made of the same material as the planarization layer 8 and is arranged in the same layer; the second stacking film layer 202 is made of the same material as the pixel defining layer 9 and is arranged in the same layer.

[0084] It should be noted that, in the embodiments of the present disclosure, "two structures are made of the same material and are disposed in the same layer" specifically means that the two structures can be produced by patterning a thin film of the same material, i.e., the two structures can be produced in the same patterning process. The patterning process in the embodiments of the present disclosure specifically refers to some or all of the process steps including photoresist coating, exposure, development, thin film etching, and photoresist stripping.

[0085] exist Figures 8a to 10 In the illustrated embodiment, the ink-blocking dam 2 includes a first ink-blocking dam 2a and a second ink-blocking dam 2b. The second ink-blocking dam 2b surrounds the opening area, and the first ink-blocking dam 2a is located on the side of the second ink-blocking dam 2b facing away from the opening area and surrounds the second ink-blocking dam 2b. A first distance H1 is defined between the surface of the first ink-blocking dam 2a facing away from the substrate 1, and a second distance H2 is defined between the surface of the second ink-blocking dam 2b facing away from the substrate 1. The first distance H1 is less than the second distance H2 (i.e., the height of the first ink-blocking dam 2a is less than the height of the second ink-blocking dam 2b). The design of the two ink-blocking dams 2a and 2b can achieve an optimal ink-blocking effect.

[0086] exist Figure 8a 、 Figure 8b 、 Figure 9a and Figure 10 In the illustrated case, the first ink barrier dam 2a includes: a second deposition film layer 202, and the second ink barrier dam 2b includes a first deposition film layer 201 and a second deposition film layer 202; Figure 9b In the illustrated case, the first ink-blocking dam 2 a includes a first accumulation film layer 201 , and the second ink-blocking dam 2 b includes the first accumulation film layer 201 and the second accumulation film layer 202 .

[0087] Those skilled in the art should know that the number of ink-blocking dams 2 can be 1, 2 or more, and the number and structure of the ink-blocking dams 2 can be set according to actual needs; in addition, the structure of each ink-blocking dam 2 can be the same or different. Since the ink-blocking dam 2 has high requirements on thickness, it is often composed of a stack of organic material films with a larger thickness, such as a material film layer for preparing a planarization layer 8 and a material film layer for preparing a pixel defining layer 9.

[0088] It should be noted that the organic functional layer 12, the second electrode 13 (the cathode of the OLED), and the inorganic sub-encapsulation layer 18a and the inorganic sub-encapsulation layer 18b can be laid as a whole layer. The organic functional layer 12, the second electrode 13, the inorganic sub-encapsulation layer 18a and the inorganic sub-encapsulation layer 18b will cover the top of the ink-blocking dam 2a and 2b located in the transition area A2, and the organic functional layer 12 is in direct contact with the surface of the ink-blocking dam 2a and 2b (the corresponding figure is not given). If the organic functional layer 12 is not laid as a whole layer, the second electrode 13, the inorganic sub-encapsulation layer 18a and the inorganic sub-encapsulation layer 18b are laid as a whole layer, and the organic functional layer 12 does not cover the transition area A2, then the second electrode 13 is in direct contact with the surface of the ink-blocking dam 2a and 2b (see Figures 8a to 10 As shown in the figure, the inorganic sub-encapsulation layer 18b is not shown in the drawings), and the inorganic sub-encapsulation layer 18a covers the surface of the second electrode 13, and the inorganic sub-encapsulation layer 18b covers the surface of the inorganic sub-encapsulation layer 18a; if the organic functional layer 12 and the second electrode 13 are not laid as a whole layer, the inorganic sub-encapsulation layer 18a and the inorganic sub-encapsulation layer 18b are laid as a whole layer, then the inorganic sub-encapsulation layer 18a is in direct contact with the surfaces of the ink barrier dams 2a and 2b, and the inorganic sub-encapsulation layer 18b covers the surface of the inorganic sub-encapsulation layer 18a.

[0089] In the embodiment of the present disclosure, the conductive film layer 5 can be divided into two categories according to the different ways in which the conductive film layer reduces the heat on the ink barrier dams 2a and 2b: the first conductive film layer and the second conductive film layer. FIG8 illustrates the case where only the first conductive film layer is provided. Figure 9a and Figure 9b The example shows the case where only the second conductive film layer is provided. Figure 10 The example in which the first conductive film layer and the second conductive film layer are provided at the same time is exemplified, and the first conductive film layer and the second conductive film layer will be described in detail below.

[0090] See also Figure 8a 、 Figure 8b and Figure 10 As shown, the first conductive film layer is located between the ink barrier dams 2a and 2b and the base substrate 1. This first conductive film layer can block and absorb some of the laser light (energy) during the laser lift-off process, reducing the amount of energy reaching the ink barrier dams 2a and 2b. The first conductive film layer can be made of a thermally conductive material with a strong light-shielding effect or strong heat absorption capability, such as a metal or polycrystalline material.

[0091] In some embodiments, the first conductive film layer may be made of the same material and disposed in the same layer as any one of the gate electrode 15, the source / drain electrode 16, and the active layer 14 in the thin film transistor T. For ease of description, the first conductive film layer made of the same material and disposed in the same layer as the gate electrode 15 in the thin film transistor T is referred to as the first film layer 21, the first conductive film layer made of the same material and disposed in the same layer as the source / drain electrode 16 in the thin film transistor T is referred to as the second film layer 22, and the first conductive film layer made of the same material and disposed in the same layer as the active layer 14 in the thin film transistor T is referred to as the third film layer 23.

[0092] In the related art, the gate 15 and the source-drain electrode 16 (including the source and drain) in the thin film transistor T are made of metal materials (for example, aluminum, molybdenum, copper and other metals or alloys), which have good light-shielding and heat-conducting effects. The active layer 14 material in the thin film transistor T can be made of polycrystalline semiconductor material, which has good heat absorption and heat-conducting effects. Therefore, the first conductive film layer can be prepared based on at least one of the metal material film layer used to prepare the gate 15, the metal material film layer used to prepare the source-drain electrode 16, and the polycrystalline semiconductor material film layer used to prepare the active layer 14. It can be seen that the first conductive film layer can be prepared based on the material film in the existing process, which can improve the utilization rate of the material film.

[0093] It should be noted that the attached Figure 8a The diagram illustrates three first conductive film layers: a first film layer 21, a second film layer 22, and a third film layer 23. Multiple first conductive film layers can effectively enhance thermal conductivity. Those skilled in the art will appreciate that only one or two first conductive film layers (or only one or two of the first film layer 21, the second film layer 22, and the third film layer 23) may be provided in the present disclosure, and these examples are not further described.

[0094] In addition, when there is a capacitor plate layer in the pixel area A3 (eg Figure 5 ), the first conductive film layer can be selected not only from the first film layer, the second film layer and the third film layer, but also from the fourth film layer, wherein the fourth film layer and the capacitor plate layer are made of the same material (generally the same material as the gate 15) and are arranged in the same layer. In the case where the first conductive film layer is the fourth film layer, the corresponding figure is not given.

[0095] In addition, when there are two layers of source and drain electrodes 16 in the pixel area A3 (for example Figure 5 As shown in FIG, the second film layer 22 may be a single-layer structure or a double-layer structure. In the case where the second film layer 22 adopts a double-layer structure, the corresponding figure is not shown.

[0096] See also Figure 8bAs shown, the first ink-blocking dam 2a and the second ink-blocking dam 2b are spaced apart, and the ink-blocking dam also includes: an area located between the first ink-blocking dam 2a and the second ink-blocking dam 2b; the orthographic projection of the conductive film layer on the base substrate 1 is located between the orthographic projection of the first ink-blocking dam 2a on the base substrate 1 and the orthographic projection of the second ink-blocking dam 2b on the base substrate 1.

[0097] For example, the orthographic projection of the first conductive film layer on the base substrate 1 is located between the orthographic projections of the two ink-blocking dams 2a and 2b on the base substrate, and does not overlap with the orthographic projections of the ink-blocking dams 2a and 2b on the base substrate 1. In this case, the first conductive film layer can also block some light to a certain extent, thereby reducing the heat absorbed by the two ink-blocking dams 2a and 2b.

[0098] Figure 8b The figure shows an example of a situation where the orthographic projections of three first conductive film layers (respectively, the first film layer 21, the second film layer 22 and the third film layer 23) on the base substrate 1 are located between the orthographic projections of two ink barrier dams 2a and 2b on the base substrate.

[0099] See also Figure 9a 、 9b and Figure 10 As shown, the second conductive film layer 24 is located on the side of the ink blocking dam facing away from the substrate and in contact with the surface of the side of the ink blocking dam facing away from the substrate, or is located in the middle of the ink blocking dam, or is located on the side of the ink blocking dam facing the substrate and in contact with the surface of the side of the ink blocking dam facing the substrate.

[0100] The second conductive film layer 24 is in contact with the ink barrier dams 2a and 2b, and achieves heat conduction through contact to reduce the heat on the ink barrier dams 2a and 2b; the second conductive film layer 24 can be made of a thermally conductive material with a larger thermal conductivity coefficient (the thermal conductivity coefficient is greater than the thermal conductivity coefficient of the ink barrier dams 2a and 2b), such as a metal material.

[0101] In some embodiments, the second conductive film layer 24 is made of the same material as the first electrode 11 and is disposed in the same layer.

[0102] In related art, the first electrode 11, serving as the anode of the organic light-emitting diode 10, can be made of a metal material. Therefore, the second conductive film layer 24 can be fabricated based on the metal film layer used to fabricate the first electrode 11. This demonstrates that the second conductive film layer 24 can be fabricated based on a thin film of material used in existing processes, thereby increasing the utilization rate of the thin film.

[0103] It should be noted that in Figure 9a and Figure 10In the illustrated case, the second conductive film layer 24 is located below the ink barrier dam 2a and in contact with the lower surface of the ink barrier dam 2a, and the second conductive film layer 24 is located in the middle of the ink barrier dam 2b. Figure 9b In the illustrated case, the second conductive film layer 24 is located above the ink-blocking dam 2 a and contacts the upper surface of the ink-blocking dam 2 a , and the second conductive film layer 24 is located in the middle of the ink-blocking dam 2 b .

[0104] In addition, Figure 9a and Figure 10 In the case shown, the second conductive film layer 24 is located between the ink-blocking dam 2a and the base substrate 1, and is in direct contact with the lower surface of the ink-blocking dam 2a. Therefore, it can block and absorb part of the laser to reduce the heat on the ink-blocking dam 2, and at the same time, it can also achieve heat conduction through contact to reduce the heat on the ink-blocking dam 2.

[0105] Figure 11 for Figure 2b Another cross-sectional schematic diagram along the A-A' direction is shown in FIG. Figure 11 As shown, Figures 8a to 10 The difference is that Figure 11 The ink-blocking dams 2a and 2b shown include not only the first stacked film layer 201 and / or the second stacked film layer 202 , but also a third stacked film layer 203 . The third stacked film layer 203 is made of the same material as the spacer dam 20 and is disposed in the same layer.

[0106] It should be noted that Figure 11 The figure only shows an example of the conductive film layer 5 including: one first conductive film layer (first film layer 21 ) and one second conductive film layer 24 .

[0107] In addition, in the above Figures 8a to 11 In the transition region A2 shown, the gate insulating layer 6 and the interlayer dielectric layer 7 between the ink barrier dams 2a and 2b and the base substrate 1 can also be selectively removed.

[0108] An embodiment of the present disclosure provides a display substrate. A conductive film layer is provided in a transition region, and the orthographic projection of the conductive film layer on the base substrate overlaps with the orthographic projection of the ink-blocking dam on the base substrate. During the laser lift-off process, due to the presence of the conductive film layer, it can absorb surrounding heat, thereby reducing the amount of heat absorbed by the ink-blocking dam, reducing the heat on the ink-blocking dam, and reducing or even eliminating the amount of gas overflow from the ink-blocking dam. This can effectively avoid separation and falling off of the film layer at the ink-blocking dam, thereby improving the product yield.

[0109] Figure 12 A flow chart of a method for preparing a display substrate provided in an embodiment of the present disclosure is shown in FIG. Figure 12 As shown, the preparation method is used to prepare the display substrate provided in the previous embodiment, and the preparation method includes:

[0110] Step S1: providing a base substrate, wherein the base substrate has an opening area, a transition area surrounding the opening area, and a pixel area surrounding the via area.

[0111] Step S2: forming at least one ink blocking dam on the base substrate, wherein the ink blocking dam is located in the transition area and surrounds the opening area.

[0112] The ink blocking dam can be prepared based on the existing planarization layer preparation process, pixel definition layer preparation process and / or spacer dam preparation process.

[0113] Step S3: forming at least one conductive film layer on the base substrate.

[0114] The conductive film layer is located in the transition zone, and the orthographic projection of the conductive film layer on the substrate overlaps with the orthographic projection of the ink blocking dam on the substrate. The conductive film layer is used to absorb heat and conduct heat to reduce the heat on the ink blocking dam.

[0115] The conductive film layer can be prepared based on the existing gate preparation process, source-drain electrode preparation process, active layer preparation process, and OLED anode preparation process.

[0116] Therefore, the technical solution of the present disclosure does not limit the execution order of step S2 and step S3. Step S2 can be executed before step S3, or step S2 can be executed after step S3, or step S2 and step S3 can be executed alternately.

[0117] The embodiment of the present disclosure further provides a display device, including: a display substrate, which adopts the display substrate provided by the previous embodiment. For the specific description of the display substrate, please refer to the content of the previous embodiment and will not be repeated here.

[0118] In some embodiments, the display device can be: an active-matrix organic light-emitting diode (AMOLED) display device, electronic paper, an OLED display device, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a navigator, or any other product or component with a display function.

[0119] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A display substrate, characterized in that: include: A substrate has an opening area, a transition area surrounding the opening area, and a pixel area surrounding the opening area; At least one ink blocking dam is located in the transition area and surrounds the opening area; the ink blocking dam includes a first stacked film layer and / or a second stacked film layer; At least one conductive film layer is located in the transition region; the conductive film layer includes multiple first conductive film layers; an insulating layer is provided between adjacent first conductive film layers; The orthographic projection of the first conductive film layer on the base substrate and the orthographic projection of the ink blocking dam on the base substrate completely overlap; The at least one conductive film layer further includes a second conductive film layer; when the ink blocking dam includes the first deposited film layer, the second conductive film layer is located on a side of the first deposited film layer facing away from the base substrate, and is in contact with a surface of the first deposited film layer facing away from the base substrate; When the ink blocking dam includes the second deposited film layer, the second conductive film layer is located on a side of the second deposited film layer facing the base substrate, and is in contact with a surface of the second deposited film layer facing the base substrate; When the ink blocking dam includes the first accumulation film layer and the second accumulation film layer, the second conductive film layer is located between the first accumulation film layer and the second accumulation film layer.

2. The display substrate according to claim 1, wherein: Also includes: Thin-film transistors, located in the pixel area; a planarization layer, located on a side of the thin film transistor facing away from the substrate; a first electrode, located on a side of the planarization layer facing away from the substrate; The pixel defining layer is located on a side of the first electrode facing away from the base substrate.

3. The display substrate according to claim 2, wherein: The first deposition film layer is made of the same material as the planarization layer and is provided in the same layer; And / or, the second deposition film layer is made of the same material as the pixel definition layer and is disposed in the same layer.

4. The display substrate according to claim 3, wherein: The display substrate further includes: a spacer dam, located on a side of the pixel defining layer facing away from the base substrate; The ink blocking dam further comprises: The third deposition film layer is made of the same material as the spacer dam and is provided in the same layer.

5. The display substrate according to claim 3, wherein: The first conductive film layer is made of the same material as one of the gate electrode, the source / drain electrode, the active layer, and the capacitor plate layer of the thin film transistor and is provided in the same layer.

6. The display substrate according to claim 3, wherein: The at least one conductive film layer further includes: a second conductive film layer, which is made of the same material as the first electrode and is provided in the same layer.

7. The display substrate according to claim 2, wherein: A pixel accommodating hole is formed on the pixel defining layer, and the display substrate further includes: an organic functional layer, located in the pixel accommodating hole; a second electrode, located on a side of the organic functional layer facing away from the base substrate; The encapsulation layer is located on a side of the second electrode facing away from the base substrate.

8. The display substrate according to any one of claims 1 to 7, characterized in that: The ink-blocking dam includes: a first ink-blocking dam and a second ink-blocking dam; The second Mozi dam surrounds the opening area, and the first Mozi dam is located on a side of the second Mozi dam facing away from the opening area and surrounds the second Mozi dam; There is a first distance between the surface of the first ink-blocking dam facing away from the substrate and the substrate, and there is a second distance between the surface of the second ink-blocking dam facing away from the substrate and the substrate, and the first distance is smaller than the second distance.

9. The display substrate according to claim 8, wherein: The first ink-blocking dam and the second ink-blocking dam are spaced apart from each other, and the ink-blocking dam further comprises: an area located between the first ink-blocking dam and the second ink-blocking dam; The orthographic projection of the conductive film layer on the base substrate is located between the orthographic projection of the first Mozi dam on the base substrate and the orthographic projection of the second Mozi dam on the base substrate.

10. A display device, characterized in that: include: The display substrate according to any one of claims 1 to 9.

11. A method for preparing a display substrate according to any one of claims 1 to 9, characterized in that: include: Providing a substrate having an opening area, a transition area surrounding the opening area, and a pixel area surrounding the opening area; forming at least one ink blocking dam on the substrate, wherein the ink blocking dam is located in the transition area and surrounds the opening area; At least one conductive film layer is formed on the base substrate and is located in the transition region. The orthographic projection of the conductive film layer on the base substrate overlaps with the orthographic projection of the ink blocking dam on the base substrate.

Images