A multi-spectrum bandpass filter structure and communication equipment

Abstract

The present invention provides a multi-spectrum bandpass filter structure, comprising a dielectric base layer, and an annular metal layer coinciding with the center of the dielectric base layer; the outer edge of the dielectric base layer and the outer ring of the annular metal layer are the same central symmetrical figure, and the size of the dielectric base layer is larger than the annular metal layer; the annular metal layer is attached to one side of the dielectric base layer; the annular metal layer is composed of an even number of spiral wire groups arranged in sequence at equal intervals, and each of the spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length. The multi-spectrum bandpass filter structure realizes multi-spectrum bandpass filtering and broadband selection of high-transmittance frequency bands while satisfying reflection and wave transmission characteristics. The present invention also provides a communication device.

Description

Technical Field

[0001] The present invention belongs to the field of communication technology, and more specifically, relates to a multi-spectrum bandpass filtering structure and communication equipment. Background Art

[0002] With the advent of the 5G era, people are paying more and more attention to the research on high-frequency electromagnetic signals. The division of microwave and millimeter wave frequency bands is becoming clearer and clearer. Not only are there differences in terms of usage, but also different countries have special standards and regulations on the use of frequency bands. At the same time, highly developed information-based commercial communication also forces electromagnetic responses to have specific frequency selection characteristics when communicating in the microwave band. A multi-spectrum bandpass filter material with both reflection and wave transmission characteristics has attracted widespread attention in the industry, and the urgent market demand has also accelerated the continuous development of this technology.

[0003] Thin-film materials with single wave-transmitting or reflecting properties are easy to find in real life, but such materials cannot be widely applied due to the monotony of their electromagnetic properties. Therefore, materials with frequency-selective characteristics for reflection and wave-transmitting properties can well make up for this shortcoming and deficiency. Summary of the invention

[0004] The object of the present invention is to provide a multi-spectrum bandpass filter structure and a communication device to solve the problem that existing thin film materials cannot have both reflection or wave transmission characteristics and frequency selection characteristics.

[0005] To achieve the above object, the technical solution adopted by the present invention is: to provide a multi-spectrum bandpass filter structure, including a dielectric base layer, and an annular metal layer coinciding with the center of the dielectric base layer;

[0006] The outer edge of the dielectric base layer and the outer ring of the annular metal layer are both of the same central symmetrical shape, and the size of the dielectric base layer is larger than that of the annular metal layer;

[0007] The annular metal layer is attached to one side of the dielectric base layer;

[0008] The annular metal layer is composed of an even number of spiral wire groups arranged in sequence at equal intervals, and each of the spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length.

[0009] Furthermore, the outer edge of the dielectric base layer and the outer ring of the annular metal layer are both square, hexagonal or circular.

[0010] Furthermore, the outer edge of the dielectric base layer and the outer ring of the annular metal layer are both square;

[0011] The annular metal layer is composed of four spiral wire groups arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square annular metal layer.

[0012] Furthermore, the side length of the annular metal layer is 7 to 11 mm.

[0013] Furthermore, the ring width of the annular metal layer is 0.4-0.8 mm.

[0014] Furthermore, the center distance between each pair of the spiral lines is 1.6-2.4 mm.

[0015] Furthermore, the annular metal layer is an ITO film or an IZO film.

[0016] Furthermore, the sheet resistance of the annular metal layer is 0.1 to 50 ohms.

[0017] Furthermore, the dielectric base layer adopts a flexible insulating substrate.

[0018] The present invention also provides a communication device, comprising the above-mentioned multi-spectrum bandpass filtering structure.

[0019] The beneficial effect of a multi-spectrum bandpass filter structure provided by the present invention is that, compared with the prior art, the multi-spectrum bandpass filter structure of the present invention realizes multi-spectrum bandpass filtering and broadband selection of high-transmittance frequency bands while satisfying reflection and wave transmission characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. It is obvious that the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0021] Figure 1 A schematic diagram of a three-dimensional structure of a multi-spectral bandpass filter structure provided by an embodiment of the present invention;

[0022] Figure 2 A side schematic diagram of a multi-spectrum bandpass filtering structure provided by an embodiment of the present invention;

[0023] Figure 3 A schematic diagram of the front and back structures of a multi-spectrum bandpass filter structure provided by an embodiment of the present invention;

[0024] Figure 4 A comparison graph of reflectivity and wave transmittance corresponding to the side length p of the multi-spectral bandpass filter structure provided by an embodiment of the present invention;

[0025] Figure 5 A comparison curve diagram of reflectivity and wave transmittance corresponding to the ring width w1 of the multi-spectral bandpass filter structure provided in an embodiment of the present invention;

[0026] Figure 6 A comparison curve of reflectivity and wave transmittance corresponding to the center distance d of the multi-spectral bandpass filter structure provided by an embodiment of the present invention;

[0027] Figure 7 A comparison curve diagram of reflectivity and wave transmittance of the multi-spectral bandpass filter structure provided by an embodiment of the present invention at different incident angles when the electromagnetic wave is incident in TE mode;

[0028] Figure 8 A comparison curve diagram of reflectivity and wave transmittance of the multi-spectral bandpass filter structure provided by an embodiment of the present invention at different incident angles when the electromagnetic wave is incident in TM mode;

[0029] Fig. 9 The sheet resistance R of the annular metal layer of the multi-spectrum bandpass filter structure provided by the embodiment of the present invention is s Corresponding reflectivity and transmittance comparison curve. DETAILED DESCRIPTION

[0030] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0031] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0032] Please also read Figures 1 to 3 The multi-spectrum bandpass filter structure provided by the present invention is now described. The multi-spectrum bandpass filter structure comprises a dielectric base layer C2, and an annular metal layer C1 coinciding with the center of the dielectric base layer C2;

[0033] The outer edge of the dielectric base layer C2 and the outer ring of the annular metal layer C1 are both of the same central symmetrical shape, and the size of the dielectric base layer C2 is larger than that of the annular metal layer C1;

[0034] The annular metal layer C1 is attached to one side of the dielectric base layer C2;

[0035] The annular metal layer C1 is composed of an even number of spiral wire groups a1 arranged in sequence at equal intervals, and each of the spiral wire groups a1 includes a pair of spiral wires and a metal sheet a2 of a preset length.

[0036] The outer edge of the dielectric base layer C2 and the outer ring of the annular metal layer C1 can be square, hexagonal or circular. For ease of understanding and description, this embodiment is described by taking the outer edge of the dielectric base layer C2 and the outer ring of the annular metal layer C1 as an example to illustrate the characteristics of the multi-spectrum bandpass filter structure of the present invention.

[0037] like Figures 1 to 3 As shown, the outer edge of the dielectric base layer C2 and the outer ring of the annular metal layer C1 are both squares. The annular metal layer C1 is composed of four spiral wire groups a1 arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square annular metal layer C1.

[0038] It should be noted that if Figure 1 and Figure 3 As shown in FIG. 1 , the spirals in one spiral group a1 can be connected to the metal sheet a2 of another spiral group a1 through the via K on the dielectric substrate C2 on the other side of the dielectric substrate C2. Moreover, a bunch of spirals in the same spiral group a1 can also be connected through the via K on the dielectric substrate C2, thus forming a Figure 3 The trace pattern shown on the back side of the dielectric substrate C2.

[0039] In a specific application scenario, Figures 1 to 3 The values ​​of the parameters are as follows: p = 10mm; l1 = 9mm; t1 = 18um; t2 = 0.2mm; g1 = 0.5mm; g2 = 1.9mm; w1 = 0.8mm; w2 = 0.1mm; d = 1.6mm. In this application scenario, the dielectric constant of the dielectric base layer C2 is 3.2, and the tangent loss is 0.003. The above parameter combination is used as a specific implementation case to achieve a bandpass filtering effect in five frequency bands (more than 80% wave transmittance), covering 0.5GHz ~ 2.1GHz, 6.4GHz ~ 14.9GHz, 20.6GHz ~ 23.7GHz, 25.1GHz ~ 25.8GHz, 26.4GHz ~ 29.7GHz respectively.

[0040] In the case of the present invention, when the values ​​of various parameters are changed, the electromagnetic characteristics of the multi-spectral bandpass filter structure will also change accordingly to meet a wider range of customized needs. The specific rules will be further explained below.

[0041] Figure 4The change characteristics of the reflectivity curve and the transmittance curve of the multi-spectrum bandpass filter structure when the side length p of the dielectric base layer C2 changes are given. It can be clearly seen from the figure that as p increases (the value range of p is 8mm~12mm, and correspondingly, the side length l1 of the annular metal layer C1 is 7mm~11mm), the reflection peak and transmission peak of the multi-spectrum bandpass filter structure will move to low frequency, and the high-frequency characteristic peak will move more obviously. The characteristic law corresponding to the change of the side length p provides frequency position control of the frequency selection characteristics of the multi-spectrum bandpass filter structure itself, and on the other hand, it provides convenience for the miniaturization of the structure.

[0042] Figure 5 The change characteristics of the reflectivity curve and the transmittance curve of the multi-spectrum bandpass filter structure when the ring width w1 of the annular metal layer C1 changes are given. It can be seen from the curve that with the increase of w1 (the value range of w1 is 0.4mm~0.8mm), the low-frequency transmission and reflection peaks remain basically unchanged, while the positions of the high-frequency transmission and reflection peaks will obviously move toward high frequencies, which provides an effective way to independently adjust the high-frequency frequency-selective electromagnetic performance characteristics. In addition, according to this rule, if the ring width w1 is further reduced, the entire multi-spectrum bandpass filter structure can basically present a transparent style against the background of a transparent dielectric substrate, which to a certain extent meets the requirements of certain communication equipment for transparent characteristics in specific scenarios.

[0043] Figure 6 The change characteristics of the reflectivity curve and the transmittance curve of the multi-spectral bandpass filter structure when the center distance d of the spiral line changes are given. It can be seen from the curve that as d increases (the value range of d is 1.6mm~2.4mm), the low-frequency transmission and reflection peaks remain basically unchanged, while the positions of the high-frequency transmission and reflection peaks will obviously move toward high frequencies.

[0044] Figure 7 The characteristics of the reflectivity curve and the transmittance curve of the multi-spectrum bandpass filter structure when the electromagnetic wave is incident on the surface of the multi-spectrum bandpass filter structure at different angles in the TE mode (i.e., transverse electric wave) are given. As can be seen from the figure, as the incident angle theta increases (theta's value range is 0 degrees to 60 degrees, when theta is 0 degrees, the electromagnetic wave is vertically incident on the surface of the multi-spectrum bandpass filter structure), the 80% wave transmission bandwidth of the low-frequency band will decrease accordingly as the angle increases, but it can still cover the entire X-band, but due to the generation of high-order modes at high frequencies, more defect peaks will appear, but it can still be applied to some narrow-band application scenarios.

[0045] Figure 8The characteristics of the reflectivity curve and the wave transmittance curve of the multi-spectrum bandpass filter structure when the electromagnetic wave is incident on the surface of the multi-spectrum bandpass filter structure at different angles in the TM mode (transverse magnetic wave) are given. As can be seen from the figure, with the increase of the incident angle theta (theta ranges from 0 degrees to 60 degrees, when theta is 0 degrees, the electromagnetic wave is vertically incident on the surface of the multi-spectrum bandpass filter structure), the 80% wave transmission bandwidth of the low-frequency band will decrease accordingly with the increase of the angle, but it can still cover the entire X-band, but due to the generation of high-order modes at high frequencies, more defect peaks will appear, but it can still be applied to some narrow-band application scenarios.

[0046] Fig. 9 The ring metal layer C1 is made of lossy metal material (such as ITO film or IZO film), and its square resistance R s The reflectivity curve and the transmittance curve of the multi-spectral bandpass filter structure change characteristics when the block resistance R s The increase (R s The value range is 0.1Ω~50Ω), the frequency-selective filtering characteristics of the multi-spectral bandpass filter structure will gradually weaken until it approaches a certain pure dielectric material. However, from the application point of view, if the lossy metal material selected is some material with transparent characteristics (such as ITO, IZO materials with a square resistance of less than 1Ω, etc.), this means that the structure can meet the needs of communication equipment for transparent characteristics to a certain extent, but the disadvantage is that it will sacrifice some wave transmission performance.

[0047] It should be noted that Figures 2 to 3 When other related geometric parameters identified are changed, the transmission curve of the multi-spectral bandpass filter structure will also be shifted accordingly, and the bandwidth will also be changed accordingly, which will not be described in detail here.

[0048] In particular, in order to be more widely applied to curved devices or portable wearable devices, the dielectric base layer C2 of the present invention can be made of a flexible insulating substrate, so that the multi-spectrum bandpass filter structure has better flexibility.

[0049] The embodiment of the present invention further provides a communication device, which includes any one of the multi-spectrum bandpass filtering structures described in the above embodiments. It can be known that the functions and characteristics possessed by the multi-spectrum bandpass filtering structure are also possessed by the communication device accordingly, including but not limited to: satisfying reflection and wave transmission characteristics, realizing multi-spectrum bandpass filtering, and realizing broadband selection of high wave transmission frequency bands. For this reason, the performance of the communication device will not be described in detail.

[0050] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A multi-spectral bandpass filtering structure, characterized in that: It includes a dielectric base layer and an annular metal layer coinciding with the center of the dielectric base layer; The outer edge of the dielectric base layer and the outer ring of the annular metal layer are both of the same central symmetrical shape, and the size of the dielectric base layer is larger than that of the annular metal layer; The annular metal layer is attached to one side of the dielectric base layer; The annular metal layer is composed of an even number of spiral wire groups arranged in sequence at equal intervals, and each of the spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length; The outer ring of the annular metal layer is a square, and the annular metal layer is composed of four spiral wire groups arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square annular metal layer; The side length of the annular metal layer is 7 to 11 mm; The ring width of the annular metal layer is 0.4-0.8 mm.

2. The multi-spectral bandpass filtering structure according to claim 1, characterized in that: The outer edge of the dielectric base layer and the outer ring of the annular metal layer are both square, hexagonal or circular.

3. The multi-spectral bandpass filtering structure according to claim 1, characterized in that: The outer edge of the dielectric base layer is a square.

4. The multi-spectral bandpass filtering structure according to any one of claims 1 to 3, characterized in that: The center distance between each pair of spiral lines is 1.6-2.4 mm.

5. The multi-spectral bandpass filtering structure according to any one of claims 1 to 3, characterized in that: The annular metal layer is an ITO film or an IZO film.

6. The multi-spectral bandpass filtering structure as claimed in claim 5, characterized in that: The sheet resistance of the annular metal layer is 0.1-50 ohms.

7. The multi-spectral bandpass filtering structure according to any one of claims 1 to 3, characterized in that: The dielectric base layer adopts a flexible insulating base material.

8. A communication device, characterized in that: It comprises the multi-spectrum bandpass filtering structure as claimed in any one of claims 1 to 7.

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