A semiconductor detection device and method

Abstract

The present invention discloses and provides a semiconductor detection device and method. A semiconductor detection device includes: an image acquisition component; a displacement member: the displacement member is provided on one side of the image acquisition component; a visible light component; a near-infrared light component; the visible light component and the near-infrared light component are slidably arranged side by side on the displacement member. By providing the displacement member on one side of the image acquisition component and slidably arranging the visible light component and the near-infrared light component side by side on the displacement member, displacement is performed on the displacement member to switch the selection of the visible light and the near-infrared light, so as to realize the appearance detection and internal detection of the object to be detected.

Description

Technical Field

[0001] The present invention relates to the technical field of optical detection, and in particular to a semiconductor detection device and method. Background Art

[0002] A semiconductor refers to a material whose electrical conductivity at room temperature is between that of a conductor and an insulator. Semiconductors have a wide range of applications in radios, televisions, and various electronic devices commonly found in daily life.

[0003] In the prior art, the semiconductor detection device generally includes an appearance detection device and an internal defect detection device. When performing semiconductor detection, different detection devices need to be replaced to separately detect the internal defects and appearance defects of the semiconductor, increasing the complexity of the detection.

[0004] Therefore, the prior art still needs to be improved. Summary of the Invention

[0005] In order to solve the problem in the prior art that the detection process is complicated because different devices need to be replaced to detect the inside and outside of a semiconductor, the present invention proposes a semiconductor detection device and method, which can realize the detection of the inside and outside of a semiconductor through one device, making the detection process more convenient and fast.

[0006] The present invention is achieved through the following technical solutions:

[0007] On the one hand, the present invention provides a semiconductor detection device, including:

[0008] An image acquisition component;

[0009] A displacement member: The displacement member is disposed on one side of the image acquisition component;

[0010] A visible light component;

[0011] A near-infrared light component;

[0012] The visible light component and the near-infrared light component are slidably disposed side by side on the displacement member.

[0013] By setting an image acquisition device to acquire the appearance image and internal image of the object to be detected, the visible light component is used to acquire the appearance image of the object to be detected, and the near-infrared light component is used to acquire the internal image of the object to be detected. By setting the displacement member on one side of the image acquisition component and slidably disposing the visible light component and the near-infrared light component side by side on the displacement member, displacement on the displacement member is performed to switch the selection of the visible light and near-infrared light, so as to realize the appearance detection and internal detection of the object to be detected.

[0014] In one embodiment of the present invention, the visible light component includes a visible light source and a first spectroscope; the near-infrared light component includes a near-infrared light source and a second spectroscope, and the displacement member is a sliding member.

[0015] In one embodiment of the present invention, the first beam splitter and the second beam splitter are adjacently spaced apart, and the visible light source, the first beam splitter, the second beam splitter and the near-visible light source are sequentially slidably arranged side by side on the sliding member.

[0016] The visible light source, the first beam splitter, the second beam splitter and the near-visible light source are slid side by side in sequence on the sliding member, so that the visible light source, the first beam splitter, the second beam splitter and the near-visible light source can slide back and forth on a straight line on the sliding member to achieve adjustment of the visible light component and the near-infrared light component, which is convenient and quick. By arranging the first beam splitter and the second beam splitter adjacent to each other, the sliding distance of the visible light component and the near-infrared light component during switching is minimized, thereby improving the efficiency of internal detection and external detection to be detected.

[0017] In one embodiment of the present invention, a mounting member for mounting the object to be detected is further included, and the mounting member and the image acquisition component are arranged on two sides of the sliding member opposite to each other.

[0018] By providing the mounting member for mounting the object to be detected, the position of the object to be detected during the test is made more stable and fixed, so that the test result is more accurate.

[0019] In one embodiment of the present invention, the image acquisition component includes a camera and a lens, wherein the lens is mounted on the camera, and the lens is coated with a high-transmittance film for near-infrared band and visible light band.

[0020] By arranging the lens of the lens to be coated with a high-transmittance film for near-infrared band and visible light band, the imaging is made clearer.

[0021] In one embodiment of the present invention, the first beam splitter and the second beam splitter are respectively cubic beam splitters, a side surface of the first beam splitter is arranged opposite to a side surface of the second beam splitter, and a sliding direction of the sliding member is perpendicular to the axial direction of the lens.

[0022] By setting the first beam splitter and the second beam splitter as cubic beam splitters, the incident light beam is divided into two beams of projection and reflection with a certain light intensity ratio, and one side of the first beam splitter is arranged facing the opposite side of the second beam splitter. The sliding direction of the sliding member is perpendicular to the axial direction of the lens, so that the incident light can irradiate the object to be measured and refract the light reflected from the object to be measured into the lens and then into the camera to achieve imaging.

[0023] In one embodiment of the present invention, the inclined surface of the first beam splitter is provided with a first semi-reflective and semi-transmissive film for the visible light band, so at least one side of the first beam splitter facing the visible light source is provided with an anti-reflection film for the first light band of visible light; the inclined surface of the second beam splitter is provided with a second semi-reflective and semi-transmissive film for the near-infrared light band, so at least one side of the second beam splitter facing the near-infrared light source is provided with an anti-reflection film for the second light band of near-infrared light.

[0024] In one embodiment of the present invention, the height of the first beam splitter is greater than the height of the second beam splitter, and the height difference between the first beam splitter and the second beam splitter is equal to the product of the ratio of the difference between the refractive index of visible light and the refractive index of near-infrared light and the value obtained by subtracting 1 from the refractive index of the lens of the camera and the focal length of the lens, and then multiplied by 0.3.

[0025] By setting the height of the first beam splitter to be greater than the height of the second beam splitter, the first beam splitter and the second beam splitter can be directly switched without adjusting the lens and the camera, and a clear image can be obtained.

[0026] In one embodiment of the present invention, the sliding member includes a first detection position and a second detection position. When the sliding member slides to the first detection position, the image acquisition component and the first beam splitter are arranged in a straight line; when the sliding member slides to the second detection position, the image acquisition component and the second beam splitter are arranged in a straight line.

[0027] By setting the first detection position and the second detection position, the imaging is more accurate and the detection is more accurate.

[0028] In one embodiment of the present invention, the sliding member includes a slide rail and a sliding component arranged in the slide rail. The visible light source, the first beam splitter, the second beam splitter, and the near-visible light source are sequentially arranged side by side on the sliding component.

[0029] By setting the slide rail, the sliding of the visible light source, the first beam splitter, the second beam splitter, and the near-visible light source is more stable and controllable.

[0030] In one embodiment of the present invention, it further includes a mounting plate, and the image acquisition component and the sliding member are respectively disposed on the mounting plate.

[0031] By providing the mounting plate and respectively disposing the image acquisition component and the sliding member on the mounting plate, the overall mounting structure becomes more stable, thereby improving the detection accuracy.

[0032] In one embodiment of the present invention, the mounting member is a robotic arm.

[0033] By providing the mounting member as a robotic arm, the position of the object to be detected can be automatically adjusted, making the detection of the object to be detected more convenient, flexible, and controllable.

[0034] On the other hand, the present invention also provides a semiconductor detection method, including:

[0035] Obtaining first image information of the semiconductor to be detected;

[0036] Switching the optical component to obtain second image information of the semiconductor to be detected;

[0037] Analyzing the first image information and the second image information to obtain the detection result of the semiconductor to be detected.

[0038] The beneficial effects of the present invention are as follows:

[0039] In the present invention, an image acquisition device is provided to acquire the appearance image and the internal image of the object to be detected. The visible light component is used to acquire the appearance image of the object to be detected, and the near-infrared light component is used to acquire the internal image of the object to be detected. By providing the sliding member on one side of the image acquisition component and slidably arranging the visible light component and the near-infrared light component side by side on the sliding member, the selection of the visible light and the near-infrared light can be switched, so as to realize the appearance detection and the internal detection of the object to be detected. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 is a schematic structural diagram of a semiconductor detection device according to an embodiment of the present invention;

[0041] Figure 2 is a schematic structural diagram of the visible light component according to an embodiment of the present invention;

[0042] Figure 3 is a schematic structural diagram of the near-infrared light component according to an embodiment of the present invention;

[0043] Figure 4 is a flowchart of a semiconductor detection method according to an embodiment of the present invention.

[0044] In the figure: 1. Image acquisition component, 10. Camera, 11. Lens, 2. Sliding member, 3. Visible light component, 30. Visible light source, 31. First beam splitter, 310. First semi-reflective and semi-transmissive film, 311. First anti-reflection film for a specific light band, 4. Near-infrared light component, 40. Near-infrared light source, 41. Second beam splitter, 410. Second semi-reflective and semi-transmissive film, 411. Second anti-reflection film for a specific light band, 5. Mounting member. Detailed implementation manners

[0045] To make the objectives, technical solutions and effects of the present invention clearer and more definite, the following further describes the present invention in detail with reference to the accompanying drawings and by way of examples. It should be understood that the specific examples described herein are only used to explain the present invention and are not used to limit the present invention.

[0046] It should be noted that if there are directional indications (such as up, down, left, right, front, back,...) involved in the implementation manners of the present invention, the directional indications are only used to explain the relative positional relationship and movement conditions among components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly.

[0047] Visible light is the part of the electromagnetic spectrum that can be perceived by the human eye. The visible light spectrum does not have an exact range; generally, the frequency that can be accurately perceived by the human eye is between 380 - 750 THz, and the wavelength is between 780 - 400 nm. However, there are also some people who can perceive electromagnetic waves with a frequency of approximately 340 - 790 THz and a wavelength of approximately 880 - 380 nm.

[0048] The infrared spectrum is usually divided into three regions: near-infrared region (0.7 - 2.5 μm), mid-infrared region (2.5 - 25 μm), and far-infrared region (25 - 1000 μm). Generally speaking, the near-infrared spectrum is generated by the overtones and sum frequencies of molecules. Because the wavelength of infrared light is longer than that of visible light, it can be reflected less by materials such as wafers than visible light. In this way, infrared light can penetrate materials such as wafers to achieve the effect of detecting the interior.

[0049] A beam splitter is a coated glass. A layer or multiple layers of thin films are deposited on the surface of an optical glass. When a beam of light is projected onto the coated glass, the beam is divided into two or more beams through reflection and refraction. A beam splitter is mainly used to divide an incident beam into two beams of projection and reflection with a certain light intensity ratio. There are two types: beam splitters with a fixed beam splitting ratio and beam splitters with a variable beam splitting ratio.

[0050] All kinds of electronic devices commonly seen in daily life, such as mobile phones, computers, TVs, and air conditioners, rely on the logical computing, storage, and sensing capabilities provided by various chips. The core of each chip is a wafer, which is cut from wafers of various specifications. There are yield issues with the wafers themselves, and various defects may also exist on the wafer surface. In order to prevent defective wafers from flowing into the subsequent packaging process, it is necessary to use optical detection equipment to identify, classify, and mark the defects on the wafer surface to assist in wafer sorting.

[0051] In order to optimize the structure of the semiconductor detection optical system, the present invention provides a semiconductor detection device and method, which reduces the detection time and improves the efficiency. The specific implementation scheme is as follows:

[0052] On the one hand, the present invention provides a semiconductor detection device, see Figure 1 , including: an image acquisition component 1, a displacement member, a visible light component 3, and a near-infrared light component 4; the displacement member is arranged on one side of the image acquisition component 1; in this implementation, the displacement member is a sliding member 2, such as an electric / non-electric slide rail, a chute, etc. In other embodiments of the present invention, the displacement member may be an electric telescopic device, a robotic arm, etc., and the present invention does not make specific limitations. The visible light component 3 and the near-infrared light component 4 are arranged side by side and slidably on the sliding member 2. By setting an image acquisition device to acquire the external image and internal image of the object to be detected, the visible light component 3 is used to acquire the external image of the object to be detected, and the near-infrared light component 4 is used to acquire the internal image of the object to be detected. By setting the sliding member 2 on one side of the image acquisition component 1 and arranging the visible light component 3 and the near-infrared light component 4 side by side and slidably on the sliding member 2, the selection of visible light and near-infrared light can be switched to realize the external and internal detection of the object to be detected.

[0053] Specifically, see Figure 1 , the image acquisition component 1 includes a camera 10 and a lens 11. The lens 11 is installed on the camera 10. The lens of the lens 11 is coated with a high-transmission film for the near-infrared band and the visible light band, which can be completed by the lens coating process of the prior art. The camera 10 can receive light beams covering the near-infrared band and the visible light band. The light of the visible light component 3 and the near-infrared light component 4 is reflected by the object to be detected and reaches the lens 11. The lens 11 focuses the light beam on the receiving surface of the camera 10 to generate image information. The image information received by the camera 10 is transmitted to a computer to respectively perform external and internal detection of the object to be detected. By setting the lens of the lens 11 to be coated with a high-transmission film for the near-infrared band and the visible light band, the penetration power of the light is stronger, the beam focusing ability of the lens 11 is stronger, and the imaging is clearer.

[0054] Based on the above embodiments, continue to refer to Figure 2 and Figure 3 , the visible light component 3 includes a visible light source 30 and a first beam splitter 31; the near-infrared light component 4 includes a near-infrared light source 40 and a second beam splitter 41.

[0055] Specifically, the visible light source can be an RGB lamp bead that can emit visible light, or a visible light lamp bead that can emit a single color, or an LED lamp tube, etc. The near-infrared light source can be a lamp bead or a lamp tube that can emit near-infrared light. Specifically, the present invention does not make specific limitations. A plurality of the light source lamp beads / tubes are evenly distributed to ensure the uniformity of the coaxial light beam and avoid problems such as unclear imaging and low quality.

[0056] Specifically, refer to Figure 2 and Figure 3 , the first beam splitter 31 is a beam splitter that matches the visible light source 30, the second beam splitter 41 is a beam splitter that matches the near-infrared light source 40, the first beam splitter 31 and the second beam splitter 41 are respectively cube-shaped beam splitters, and the cube-shaped beam splitters are formed by splicing two 45° right-angled triangular prisms. In this embodiment, the centers of the first beam splitter 31 and the second beam splitter 41 are located on the same straight line, and one side surface of the first beam splitter 31 is adjacent to and faces one side surface of the second beam splitter 41, and the sliding direction of the sliding member 2 is perpendicular to the axial direction of the lens 11. In other embodiments of the present invention, the centers of the first beam splitter 31 and the second beam splitter 41 may not be located on the same straight line, and one side surface of the first beam splitter 31 and one side surface of the second beam splitter 41 may not be adjacent, and they can be adjacent and face each other with their edges, etc. As long as the light of the visible light source / near-infrared light source can be split by the first beam splitter 31 / second beam splitter 41, reflected on the object to be detected, and then split by the first beam splitter 31 / second beam splitter 41 and enter the lens 11, the setting method is acceptable.

[0057] Furthermore, refer to Figure 2 and Figure 3, a first dichroic mirror 31 is provided with a first semi-reflective and semi-transmissive film 310 for the visible light band on its inclined surface. Therefore, at least one side of the first dichroic mirror 31 facing the visible light source 30 is provided with a first light band anti-reflection film 311 for visible light; the inclined surface of the second dichroic mirror 41 is provided with a second semi-reflective and semi-transmissive film 410 for the near-infrared light band. Therefore, at least one side of the second dichroic mirror 41 facing the near-infrared light source 40 is provided with a second light band anti-reflection film 411 for near-infrared light. The light beam emitted by the visible light source 30 / near-infrared light source 40 is split on the inclined surface provided with the first semi-reflective and semi-transmissive film 310 / second semi-reflective and semi-transmissive film 410 (the inclined surface becomes a semi-transparent surface after coating or special treatment) to form two beams of light, namely a transmitted light and a reflected light, with a certain light intensity ratio. The reflected light is reflected by the inclined surface onto the object to be detected, and the transmitted light passes through the inclined surface and is refracted to the opposite side of the incident light source. Since the wavelength of the near-infrared light is longer than that of the visible light, it can be reflected less by materials such as wafers than visible light. In this way, the visible light is reflected back into the first dichroic mirror 31 outside the wafer, and is split into a transmitted light and a reflected light again through the inclined surface of the first dichroic mirror 31. Among them, the reflected light is reflected back along the incident light path of the incident light, and the transmitted light passes through the inclined surface of the first dichroic mirror 31 and reaches the lens 11. The near-infrared light can penetrate materials such as wafers and be reflected back through the internal materials, and similarly achieve the effect of detecting the inside.

[0058] By setting the first dichroic mirror 31 and the second dichroic mirror 41 as cubic beam splitters, the incident light beam is split into two beams of light, namely a transmitted light and a reflected light, with a certain light intensity ratio. And, in this embodiment, the centers of the first dichroic mirror 31 and the second dichroic mirror 41 are located on the same straight line, and one side surface of the first dichroic mirror 31 is adjacent to and faces one side surface of the second dichroic mirror 41. The sliding direction of the sliding member 2 is perpendicular to the axial direction of the lens 11, so that the incident light can irradiate the object to be detected and refract the light reflected from the object to be detected into the lens 11 and then into the camera 10 to realize imaging. In other embodiments of the present invention, the centers of the first dichroic mirror 31 and the second dichroic mirror 41 may not be located on the same straight line, and the present invention does not make specific limitations in this regard.

[0059] Specifically, in this embodiment, the first dichroic mirror 31 is provided with a first light band anti-reflection film 311 on all surfaces except the inclined surface to increase the light transmittance of visible light and enhance light transmission. The second dichroic mirror 41 is provided with a first light band anti-reflection film 311 on all surfaces except the inclined surface to increase the light transmittance of visible light and enhance light transmission, so that the incident light beam can better penetrate the first dichroic mirror 31 / second dichroic mirror 41, increase the imaging accuracy of the camera 10, and further ensure the accuracy of detection.

[0060] On the basis of the above embodiment, refer to Figure 1, the height of the first beam splitter 31 is greater than the height of the second beam splitter 41, and the height difference between the first beam splitter 31 and the second beam splitter 41 is equal to the product of the difference between the refractive index of visible light and the refractive index of near-infrared light, the ratio of the refractive index of the lens of the lens 11 minus 1, and the focal length of the lens 11, multiplied by 0.3. The specific formula is:

[0061]

[0062] , where Δf is the difference between the focal length of visible light and the focal length of near-infrared light, f is the focal length of the lens 11, n1 - n2 is the difference in the directivity rate between visible light and near-infrared light, and n is the refractive index of the lens. Among them, the difference between the focal length of visible light and the focal length of near-infrared light of 1 mm multiplied by 0.3 mm is the height difference between the first beam splitter 31 and the second beam splitter 41. This height difference is based on the height difference between the first beam splitter 31 and the second beam splitter 41 in the direction of the lens 11 from the object to be detected. By setting the height of the first beam splitter 31 to be greater than the height of the second beam splitter 41, the first beam splitter 31 and the second beam splitter 41 can be directly switched without adjusting the lens 11 and the camera 10, obtaining a clear image. This height difference ensures that only by adjusting and moving the visible light component 3 and the near-infrared light component 4 can the internal and external detection of the object to be detected be accurately satisfied, and the stability and accuracy of imaging can be ensured without adjusting the lens 11 again.

[0063] In one embodiment of the present invention, the slider 2 includes a first detection position and a second detection position. When the slider 2 slides to the first detection position, the image acquisition component 1 and the first beam splitter 31 are arranged in a straight line; when the slider 2 slides to the second detection position, the image acquisition component 1 and the second beam splitter 41 are arranged in a straight line. By setting the first detection position and the second detection position, the imaging is made more accurate and the detection is more accurate.

[0064] Specifically, the visible light component 3 and the near-infrared light component 4 can be encapsulated inside a housing and integrally slidably mounted on the slider 2. Openings for light output are provided on the housing corresponding to the sides of the first beam splitter 31 and the second beam splitter 41 facing the object to be detected and the side facing the lens 11. In other embodiments of the present invention, the visible light component 3 and the near-infrared light component 4 can also be mounted on a mounting plate and connected to the slider 2 through the mounting plate to achieve overall position fixation.

[0065] Further, on the basis of the above embodiments, the sliding member 2 includes a slide rail and a sliding component disposed within the slide rail. The visible light source 30, the first beam splitter 31, the second beam splitter 41, and the near-visible light source 30 are sequentially arranged side by side on the sliding component. By providing the slide rail, the sliding of the visible light source 30, the first beam splitter 31, the second beam splitter 41, and the near-visible light source 30 becomes more stable and controllable.

[0066] Specifically, the slide rail can be an electric slide rail or a common slide rail, and the sliding component can be a slider, a slide plate, etc. The sliding component can be controlled electrically to move within the slide rail, or manually adjusted by sliding to enable the sliding member 2 to reach the first detection position / second detection position, which is specifically set according to the user's desired method. The present invention does not make specific limitations in this regard.

[0067] On the basis of the above embodiments, it further includes a mounting plate, and the image acquisition component 1 and the sliding member 2 are respectively disposed on the mounting plate. By providing the mounting plate and respectively disposing the image acquisition component 1 and the sliding member 2 on the mounting plate, the overall mounting structure becomes more stable, thereby improving the detection accuracy. In other embodiments of the present invention, the image acquisition component 1, the sliding member 2, the visible light component 3, and the near-infrared light component 4 can also be installed in an installation housing, and an opening for forming an optical path is provided on the housing corresponding to the position of the mounting member 5. The present invention does not make specific limitations in this regard.

[0068] On the basis of the above embodiments, the mounting member 5 is a robotic arm. The robotic arm can be mounted on the mounting plate or can be mounted independently, and can be adjusted according to actual installation requirements. The present invention does not make specific limitations in this regard. By providing the mounting member 5 as a robotic arm, the position of the object to be detected can be automatically adjusted, making the detection of the object to be detected more convenient, flexible, and controllable. In other embodiments of the present invention, the mounting member 5 can also be a slide rail, a chute, etc., to avoid the situation where the object to be detected is too large to be completely photographed at one time. The robotic arm can be used for displacement to make the detection process more convenient and reasonable.

[0069] Further, all types of films described in the above embodiments can be obtained through a preparation process. The film system is designed by combining the optical design principle with film system software and is set using the film design process.

[0070] On the other hand, based on the device described in the above embodiments, the present invention further provides a semiconductor detection method, including:

[0071] Step S100: Obtain the first image information of the semiconductor to be detected;

[0072] Step S200: Switch the optical component to obtain the second image information of the semiconductor to be detected;

[0073] Step S300: Analyze the first image information and the second image information to obtain the detection result of the semiconductor to be detected.

[0074] Specifically, the semiconductor to be detected is a wafer. Visible light / near-infrared light is emitted by the visible light component. The first beam splitter / second beam splitter splits the visible light / near-infrared light. The reflected light after splitting is reflected onto the wafer, and the wafer reflects the light beam back to the first beam splitter / second beam splitter. The transmitted light of the first beam splitter / second beam splitter reaches the lens, and the lens focuses the light beam on the camera receiving surface to obtain clear first image information. The first image information received by the camera is transmitted to the computer for external detection of visible light beam imaging. The first image information is the external image information / internal image information of the wafer / semiconductor to be detected. Specifically, the detection order can be adjusted through a control chip or a controller or a control program, and multiple images may be included.

[0075] After obtaining clear first image information, control the switching of the light component. When the first image information is the external image information of the wafer / semiconductor, control the displacement of the slider at this time, and switch the visible light component to the near-infrared light component to perform internal defect detection of the wafer / semiconductor component in the same way. At this time, the second image information is the internal image information, and multiple images may be included. Then the computer or the controller processes the first image information and the second image information to obtain the detection result.

[0076] Those of ordinary skill in the art can understand that all or part of the processes of implementing the methods in the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, storage, database, or other medium used in the various embodiments provided by the present invention can include non-volatile and / or volatile memories. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and Rambus dynamic RAM (RDRAM), etc. Further, the memory can also include both internal storage units and external storage devices. The memory is used to store application software installed on the mobile terminal and various types of data, such as program codes installed on the mobile terminal, etc. The memory can also be used to temporarily store data that has been output or will be output.

[0077] In some embodiments, the processor can be a central processing unit (CPU), a microprocessor, a co-processor, or other data processing chips, and is used to run the program code stored in the memory or process data, such as executing the mobile terminal flashing control processing method, etc.

[0078] The present invention collects the external appearance image and the internal image of the object to be detected by setting an image acquisition device. The visible light component is used to collect the external appearance image of the object to be detected, and the near-infrared light component is used to collect the internal image of the object to be detected. By setting the sliding member on one side of the image acquisition component and arranging the visible light component and the near-infrared light component side by side and slidably on the sliding member, the selection of visible light and near-infrared light can be switched, so as to realize the external appearance detection and internal detection of the object to be detected.

[0079] It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or modifications can be made according to the above description, and all such improvements and modifications should fall within the protection scope of the appended claims of the present invention.

Claims

1. A semiconductor detection device, characterized in that, Comprising: An image acquisition component; A displacement member: The displacement member is disposed on one side of the image acquisition component; A visible light component; A near-infrared light component; The visible light component and the near-infrared light component are slidably arranged side by side on the displacement member; The visible light component includes a visible light source and a first beam splitter; the near-infrared light component includes a near-infrared light source and a second beam splitter, and the displacement member is a sliding member; The first beam splitter and the second beam splitter are arranged adjacent to each other at intervals, and the visible light source, the first beam splitter, the second beam splitter, and the near-visible light source are sequentially arranged side by side and slidably on the sliding member; The image acquisition component includes a camera and a lens, the lens is mounted on the camera, and a high-transmission film for the near-infrared band and the visible light band is coated on the lens of the lens; The first beam splitter and the second beam splitter are respectively cubic beam splitters, one side surface of the first beam splitter is arranged facing the one side surface of the second beam splitter, and the sliding direction of the sliding member is perpendicular to the axial direction of the lens; The height of the first beam splitter is greater than the height of the second beam splitter, and the height difference between the first beam splitter and the second beam splitter is equal to the product of the ratio of the difference between the refractive index of visible light and the refractive index of near-infrared light to the value obtained by subtracting 1 from the refractive index of the lens of the lens and the focal length of the lens multiplied by 0.3; The cubic beam splitter is formed by splicing two 45° right-angled triangular prisms; Set the relevant positional relationship between the first beam splitter and the second beam splitter so that the light of the visible light source / near-infrared light source is split by the first beam splitter / second beam splitter, reflected on the object to be detected, and then split by the first beam splitter / second beam splitter and enters the lens.

2. The semiconductor detection device according to claim 1, characterized in that, It further includes a mounting member for mounting the object to be detected, and the mounting member and the image acquisition component are relatively arranged on both sides of the sliding member.

3. A semiconductor detection device according to claim 1, wherein, The inclined surface of the first beam splitter is provided with a first semi-reflective and semi-transmissive film for the visible light band, so at least one surface of the first beam splitter facing the visible light source is provided with a first light band anti-reflection film for visible light; the inclined surface of the second beam splitter is provided with a second semi-reflective and semi-transmissive film for the near-infrared light band, so at least one surface of the second beam splitter facing the near-infrared light source is provided with a second light band anti-reflection film for near-infrared light.

4. A semiconductor detection device according to claim 1, characterized in that, The sliding member includes a first detection position and a second detection position. When the sliding member slides to the first detection position, the image acquisition component and the first beam splitter are arranged in a straight line; when the sliding member slides to the second detection position, the image acquisition component and the second beam splitter are arranged in a straight line.

5. A semiconductor detection device according to claim 4, characterized in that, The sliding member includes a slide rail and a sliding component disposed in the slide rail, and the visible light source, the first beam splitter, the second beam splitter, and the near-visible light source are sequentially arranged side by side on the sliding component.

6. A semiconductor detection device according to claim 1, characterized in that, It further includes a mounting plate, and the image acquisition component and the sliding member are respectively disposed on the mounting plate.

7. A semiconductor detection device according to claim 2, characterized in that, The mounting member is a robotic arm.

8. A semiconductor detection method, characterized in that, Applied to implement the semiconductor detection device according to any one of claims 1-7, including: Obtaining first image information of the semiconductor to be detected; Switching the optical component to obtain second image information of the semiconductor to be detected; Analyze the first image information and the second image information to obtain the detection result of the semiconductor to be detected.

Images