Magnetic storage device

Abstract

A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes an alternating stack of a magnetic pattern and a non-magnetic pattern. The first pinned pattern is a ferromagnetic pattern composed of ferromagnetic elements.

Description

Technical Field

[0001] The exemplary embodiments of the present invention relate to semiconductor devices, and more specifically, to magnetic storage devices including magnetic tunnel junctions. Background Technology

[0002] The need for high-speed and / or low-power electronic devices necessitates the use of high-speed and / or low-voltage semiconductor memory devices. Magnetic memory devices have been developed as semiconductor memory devices capable of partially or fully meeting these requirements. Due to their high-speed and / or non-volatile characteristics, magnetic memory devices may emerge as the next generation of semiconductor memory devices.

[0003] Typically, magnetic storage devices can include magnetic tunnel junctions (MTJs). A MTJ can include two magnetic layers and an insulating layer disposed between these two magnetic layers. The resistance of the MTJ can vary depending on the magnetization directions of the two magnetic layers. For example, when the magnetization directions of the two magnetic layers are antiparallel to each other, the MTJ can have a relatively high resistance. When the magnetization directions of the two magnetic layers are parallel to each other, the MTJ can have a relatively low resistance. Magnetic storage devices can utilize the difference in resistance between the MTJs to write / read data. With the development of the electronics industry, there is an increasing need for highly integrated and / or low-power magnetic storage devices. Therefore, various researches are underway to meet these needs. Summary of the Invention

[0004] Some exemplary embodiments of the inventive concept can provide magnetic storage devices with excellent properties and methods for manufacturing the same.

[0005] Some exemplary embodiments of the inventive concept can also provide magnetic storage devices and methods thereof that can be easily mass-produced.

[0006] According to some example embodiments, a magnetic storage device may include: a reference magnetic structure including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern, the second pinned pattern comprising alternating stacked magnetic and non-magnetic patterns; a free magnetic structure; and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The second pinned pattern is located between the first pinned pattern and the tunnel barrier pattern. The first pinned pattern is a ferromagnetic pattern that is essentially composed of ferromagnetic elements.

[0007] According to some example embodiments, a magnetic storage device may include: a reference magnetic structure including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern, the second pinned pattern comprising alternating stacked magnetic and non-magnetic patterns; a free magnetic structure; and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The second pinned pattern is located between the first pinned pattern and the tunnel barrier pattern. The first pinned pattern is a monolayer comprising ferromagnetic elements. Attached Figure Description

[0008] The inventive concept will become more apparent from the accompanying drawings and detailed description.

[0009] Figure 1 This is a circuit diagram illustrating a cell array of magnetic storage devices according to some exemplary embodiments of the inventive concept.

[0010] Figure 2 This is a circuit diagram illustrating a unit storage cell of a magnetic storage device according to some exemplary embodiments of the inventive concept.

[0011] Figure 3 This is a cross-sectional view showing some example embodiments of a magnetic storage device according to the inventive concept.

[0012] Figure 4 It is shown Figure 3 An enlarged view of the reference magnetic structure of the magnetic storage device.

[0013] Figure 5 This is a cross-sectional view showing some example embodiments of a magnetic storage device according to the inventive concept.

[0014] Figure 6 and Figure 7 This is a cross-sectional view illustrating a method of manufacturing a magnetic storage device according to some exemplary embodiments of the inventive concept.

[0015] Figure 8 This is a cross-sectional view showing some example embodiments of a magnetic storage device according to the inventive concept.

[0016] Figure 9 It is shown Figure 8 An enlarged view of the reference magnetic structure of the magnetic storage device.

[0017] Figure 10 and Figure 11 This is a cross-sectional view illustrating a method of manufacturing a magnetic storage device according to some exemplary embodiments of the inventive concept. Detailed Implementation

[0018] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0019] Figure 1 This is a circuit diagram illustrating a cell array of magnetic storage devices according to some exemplary embodiments of the inventive concept.

[0020] refer to Figure 1 Multiple unit memory cells (MCs) can be arranged in two-dimensional and / or three-dimensional configurations. Each unit memory cell (MC) can be electrically connected between intersecting word lines (WL) and bit lines (BL). Each unit memory cell (MC) can include a memory element (ME) and a select element (SE). The select element (SE) and the memory element (ME) can be electrically connected in series with each other.

[0021] The memory element ME can be connected between the bit line BL and the select element SE. The select element SE can be disposed between the memory element ME and the source line SL, and can be controlled by the word line WL. The memory element ME can be or may include a variable resistor element, the resistance state of which can be switched between two different resistance states by an electrical pulse applied to it. In some example embodiments, the memory element ME may have a thin-layer structure whose resistance can be changed by the spin-transfer torque of electrons flowing through it with a programming current. The memory element ME may have a thin-layer structure exhibiting magnetoresistive properties and may include at least one ferromagnetic material and / or at least one antiferromagnetic material.

[0022] The selector element SE can selectively control the current supply to the storage element ME. For example, the selector element SE can be or includes a diode, a PNP bipolar transistor, an NPN bipolar transistor, an NMOS field-effect transistor, and / or a PMOS field-effect transistor. When the selector element SE is or includes a three-terminal element (e.g., a bipolar transistor or a MOS field-effect transistor), the source line SL can be connected to the source electrode of that transistor. In some example embodiments, the source line SL can be positioned between adjacent word lines WL, and two adjacent transistors can share a single source line SL.

[0023] Figure 2 This is a circuit diagram illustrating a unit storage cell of a magnetic storage device according to some exemplary embodiments of the inventive concept.

[0024] refer to Figure 2A unit storage cell (MC) may include a storage element (ME) and a selection element (SE). The storage element (ME) may include a magnetic tunnel junction (MTJ) comprising magnetic patterns FL and RL spaced apart from each other, and a tunnel barrier pattern (TBP) disposed between the magnetic patterns FL and RL. One of the magnetic patterns FL and RL may be a reference magnetic pattern RL having a magnetization direction that is fixed in one direction under typical operating conditions and is independent of the external magnetic field and / or spin torque applied to the MTJ. The other magnetic pattern FL may be a free magnetic pattern FL, whose magnetization direction can change between two stable magnetization directions based on the external magnetic field or spin torque applied to the MTJ. The resistance of the MTJ can be much greater when the magnetization directions of the reference magnetic pattern RL and the free magnetic pattern FL are antiparallel to each other than when the magnetization directions of the reference magnetic pattern RL and the free magnetic pattern FL are parallel to each other. For example, the resistance of the MTJ can be adjusted by changing the magnetization direction of the free magnetic pattern FL. By utilizing the resistance difference between the magnetization direction of the reference magnetic pattern RL and the magnetization direction of the free magnetic pattern FL, logic data can be stored in the storage element ME of the unit storage cell MC.

[0025] Figure 3 This is a cross-sectional view showing some example embodiments of a magnetic storage device according to the inventive concept. Figure 4 It is shown Figure 3 An enlarged view of the reference magnetic structure of the magnetic storage device.

[0026] refer to Figure 3 and Figure 4 The lower interlayer insulating layer 102 may be disposed on the substrate 100. The substrate 100 may be or may include a semiconductor substrate, including silicon, silicon-on-insulator (SOI), silicon-germanium (SiGe), germanium (Ge), and / or gallium-arsenide (GaAs). The substrate 100 may be doped, for example, lightly doped with boron; however, the inventive concept is not limited thereto. The substrate 100 may include an epitaxial layer, such as a homogeneous or heterogeneous epitaxial layer deposited thereon; however, the inventive concept is not limited thereto. A selection element may be disposed on the substrate 100, and the lower interlayer insulating layer 102 may cover the selection element. The selection element may be or include a field-effect transistor and / or a diode. The lower interlayer insulating layer 102 may include at least one of oxides, nitrides, and oxide oxynitrides.

[0027] The lower contact plug 104 may be disposed in the lower interlayer insulating layer 102. The lower contact plug 104 may penetrate the lower interlayer insulating layer 102 to electrically connect to a terminal of a corresponding one of the selected elements. The lower contact plug 104 may include at least one of a doped semiconductor material (e.g., doped silicon, such as doped polysilicon), a metal (e.g., tungsten, titanium and / or tantalum), a conductive metal nitride (e.g., titanium nitride, tantalum nitride and / or tungsten nitride), and a metal semiconductor compound (e.g., a metal silicide).

[0028] The bottom electrode BE can be disposed on the lower interlayer insulating layer 102. The bottom electrode BE can be electrically connected to the lower contact plug 104. The bottom electrode BE can include a conductive material. For example, the bottom electrode BE can include a conductive metal nitride such as titanium nitride and / or tantalum nitride.

[0029] A magnetic tunnel junction pattern (MTJ) can be disposed on the lower interlayer insulating layer 102 and electrically connected to the lower contact plug 104 via a bottom electrode BE. The bottom electrode BE can be disposed between the magnetic tunnel junction pattern MTJ and the lower contact plug 104. The magnetic tunnel junction pattern MTJ may include a reference magnetic structure RMS, a free magnetic structure FMS, and a tunnel barrier pattern TBP between the reference magnetic structure RMS and the free magnetic structure FMS. In some example embodiments, the reference magnetic structure RMS may be disposed between the bottom electrode BE and the tunnel barrier pattern TBP.

[0030] The top electrode TE can be disposed on the magnetic tunnel junction pattern MTJ. The magnetic tunnel junction pattern MTJ can be disposed between the bottom electrode BE and the top electrode TE. In some example embodiments, the free magnetic structure FMS can be disposed between the tunnel barrier pattern TBP and the top electrode TE. The top electrode TE can include a conductive material. For example, the top electrode TE can include at least one of a metal (e.g., tantalum (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), and / or titanium (Ti)) and a conductive metal nitride (e.g., tantalum nitride (TaN) and / or titanium nitride (TiN)).

[0031] A seed pattern 110 may be disposed between a magnetic tunnel junction pattern MTJ and a bottom electrode BE. The seed pattern 110 may include a material that aids in the crystal growth of the magnetic layer constituting the magnetic tunnel junction pattern MTJ or included in the magnetic tunnel junction pattern MTJ. The seed pattern 110 may include at least one of chromium (Cr), iridium (Ir), and ruthenium (Ru). In some example embodiments, the seed pattern 110 may be disposed between a reference magnetic structure RMS and a bottom electrode BE.

[0032] The reference magnetic structure RMS may include a first pinned pattern 120, a second pinned pattern 140 between the first pinned pattern 120 and the tunnel barrier pattern TBP, and an exchange-coupled pattern 130 between the first pinned pattern 120 and the second pinned pattern 140. The second pinned pattern 140 may include alternately stacked magnetic patterns 122, 124, and 126 and non-magnetic patterns 132 and 134. In some example embodiments, the second pinned pattern 140 may include a first ferromagnetic pattern 122 between the exchange-coupled pattern 130 and the tunnel barrier pattern TBP, a second ferromagnetic pattern 124 between the first ferromagnetic pattern 122 and the tunnel barrier pattern TBP, a polarization-enhancing magnetic pattern 126 between the second ferromagnetic pattern 124 and the tunnel barrier pattern TBP, a first non-magnetic pattern 132 between the first ferromagnetic pattern 122 and the second ferromagnetic pattern 124, and a second non-magnetic pattern 134 between the second ferromagnetic pattern 124 and the polarization-enhancing magnetic pattern 126.

[0033] The first pinned pattern 120 may be a ferromagnetic pattern composed of (or formed of) ferromagnetic elements, or essentially composed of or including ferromagnetic elements. The first pinned pattern 120 may include at least one of iron (Fe), cobalt (Co), and nickel (Ni). The first pinned pattern 120 may not include non-magnetic elements. The first pinned pattern 120 may be a monolayer composed of (or formed of) ferromagnetic elements, or essentially composed of or including ferromagnetic elements. For example, the first pinned pattern 120 may be a monolayer of cobalt (Co).

[0034] The first pinned pattern 120 can be disposed between the seed pattern 110 and the exchange-coupled pattern 130. The seed pattern 110 can contact one surface of the first pinned pattern 120, for example, it can have a portion that directly contacts one surface of the first pinned pattern 120, and the exchange-coupled pattern 130 can contact the other surface of the first pinned pattern 120, for example, it can have a portion that directly contacts the other surface of the first pinned pattern 120. The first pinned pattern 120 can have perpendicular magnetization properties through the magnetic anisotropy induced by the junction between the seed pattern 110 and the first pinned pattern 120 and / or the junction between the exchange-coupled pattern 130 and the first pinned pattern 120. The magnetization direction 120m of the first pinned pattern 120 can be substantially perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS, and can be fixed in one direction, for example, it can be fixed in a direction toward the substrate 100. The first pinned pattern 120 may have a thickness 120T in a direction perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS (i.e., in a direction perpendicular to a surface (e.g., the surface of the substrate 100)).

[0035] The seed pattern 110 may include a material that aids in the crystal growth of the first pinned pattern 120. For example, the seed pattern 110 may include at least one of chromium (Cr), iridium (Ir), and ruthenium (Ru). The exchange-coupled pattern 130 may include a nonmagnetic material with antiferromagnetic coupling properties. For example, the exchange-coupled pattern 130 may include at least one of iridium (Ir) and ruthenium (Ru). The exchange-coupled pattern 130 may include the same and / or different materials as the seed pattern 110.

[0036] The first ferromagnetic pattern 122 may include the same ferromagnetic material as the first pinned pattern 120. The first ferromagnetic pattern 122 may include at least one of iron (Fe), cobalt (Co), and nickel (Ni), and may not include non-magnetic elements. The first ferromagnetic pattern 122 may be composed of (or formed of) ferromagnetic elements, or be essentially composed of ferromagnetic elements, or be a monolayer comprising ferromagnetic elements. For example, the first ferromagnetic pattern 122 may be a monolayer of cobalt (Co).

[0037] A first ferromagnetic pattern 122 can be disposed between an exchange-coupled pattern 130 and a first non-magnetic pattern 132. The exchange-coupled pattern 130 can contact one surface of the first ferromagnetic pattern 122, for example, it can have a portion directly contacting one surface of the first ferromagnetic pattern 122, and the first non-magnetic pattern 132 can contact the other surface of the first ferromagnetic pattern 122, for example, it can have a portion directly contacting the other surface of the first ferromagnetic pattern 122. The first ferromagnetic pattern 122 can have perpendicular magnetization properties due to the magnetic anisotropy induced by the junction between the exchange-coupled pattern 130 and the first ferromagnetic pattern 122 and / or the junction between the first non-magnetic pattern 132 and the first ferromagnetic pattern 122. The magnetization direction 122m of the first ferromagnetic pattern 122 can be substantially perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS.

[0038] The first ferromagnetic pattern 122 can be antiferromagnetically coupled to the first pinned pattern 120 via an exchange coupling pattern 130. The exchange coupling pattern 130 can couple the magnetization direction 120m of the first pinned pattern 120 to the magnetization direction 122m of the first ferromagnetic pattern 122 in such a manner that the magnetization directions 120m and 122m are antiparallel to each other. For example, the magnetization direction 122m of the first ferromagnetic pattern 122 can be fixed in a direction antiparallel to the magnetization direction 120m of the first pinned pattern 120.

[0039] The first ferromagnetic pattern 122 may have a thickness 122T in a direction perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS (e.g., in a direction perpendicular to a surface). The thickness 120T of the first pinned pattern 120 may be equal to or greater than the thickness 122T of the first ferromagnetic pattern 122.

[0040] The first nonmagnetic pattern 132 may include a nonmagnetic material with antiferromagnetic coupling properties. For example, the first nonmagnetic pattern 132 may include at least one of iridium (Ir) and ruthenium (Ru).

[0041] The second ferromagnetic pattern 124 may include the same ferromagnetic material as the first ferromagnetic pattern 122. In some example embodiments, the first ferromagnetic pattern 122 and the second ferromagnetic pattern 124 may include the same ferromagnetic material as the first pinned pattern 120. The second ferromagnetic pattern 124 may include at least one of iron (Fe), cobalt (Co), and nickel (Ni), and may not include non-magnetic elements. The second ferromagnetic pattern 124 may be composed of (or formed of) ferromagnetic elements, or be essentially composed of ferromagnetic elements, or be a monolayer comprising ferromagnetic elements. For example, the second ferromagnetic pattern 124 may be a monolayer of cobalt (Co).

[0042] A second ferromagnetic pattern 124 can be disposed between the first non-magnetic pattern 132 and the second non-magnetic pattern 134. The first non-magnetic pattern 132 can contact one surface of the second ferromagnetic pattern 124, for example, it can have a portion that directly contacts one surface of the second ferromagnetic pattern 124, and the second non-magnetic pattern 134 can contact the other surface of the second ferromagnetic pattern 124, for example, it can have a portion that directly contacts the other surface of the second ferromagnetic pattern 124. The second ferromagnetic pattern 124 can have perpendicular magnetization properties due to the magnetic anisotropy induced by the junction of the first non-magnetic pattern 132 and the second ferromagnetic pattern 124. The magnetization direction 124m of the second ferromagnetic pattern 124 can be substantially perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS.

[0043] The second ferromagnetic pattern 124 can be antiferromagnetically coupled to the first ferromagnetic pattern 122 via the first non-magnetic pattern 132. The first non-magnetic pattern 132 can couple the magnetization direction 122m of the first ferromagnetic pattern 122 to the magnetization direction 124m of the second ferromagnetic pattern 124 in such a way that the magnetization directions 122m and 124m are antiparallel to each other. In other words, the magnetization direction 124m of the second ferromagnetic pattern 124 can be fixed antiparallel to the magnetization direction 122m of the first ferromagnetic pattern 122.

[0044] The second ferromagnetic pattern 124 may have a thickness of 124T in a direction perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS (i.e., in a direction perpendicular to a surface). The thickness 120T of the first pinned pattern 120 may be greater than the thickness 124T of the second ferromagnetic pattern 124. In some example embodiments, the thickness 120T of the first pinned pattern 120 may be equal to or greater than the thickness 122T of the first ferromagnetic pattern 122, and the thickness 122T of the first ferromagnetic pattern 122 may be greater than the thickness 124T of the second ferromagnetic pattern 124.

[0045] The second nonmagnetic pattern 134 may include a nonmagnetic material with ferromagnetic coupling properties. For example, the second nonmagnetic pattern 134 may include at least one of tungsten (W), molybdenum (Mo), niobium (Nb), tantalum (Ta), and vanadium (V).

[0046] The polarization-enhanced magnetic pattern 126 may include a magnetic material capable of inducing interfacial perpendicular magnetic anisotropy at the interface between the tunnel barrier pattern TBP and the polarization-enhanced magnetic pattern 126. For example, the polarization-enhanced magnetic pattern 126 may include a magnetic material having a body-centered cubic (BCC) structure, and may also include non-magnetic elements. For example, the polarization-enhanced magnetic pattern 126 may include at least one of cobalt (Co), iron (Fe), and nickel (Ni), and may also include at least one of boron (B), zinc (Zn), aluminum (Al), titanium (Ti), ruthenium (Ru), tantalum (Ta), silicon (Si), silver (Ag), gold (Au), copper (Cu), carbon (C), and nitrogen (N). For example, the polarization-enhanced magnetic pattern 126 may include cobalt-iron (CoFe) and / or nickel-iron (NiFe), and may also include boron (B). For example, the polarization-enhanced magnetic pattern 126 may include cobalt-iron-boron (CoFeB).

[0047] A polarization-enhanced magnetic pattern 126 can be disposed between a second non-magnetic pattern 134 and a tunnel barrier pattern TBP. The second non-magnetic pattern 134 can contact one surface of the polarization-enhanced magnetic pattern 126, for example, it can have a portion directly contacting one surface of the polarization-enhanced magnetic pattern 126, and the tunnel barrier pattern TBP can contact the other surface of the polarization-enhanced magnetic pattern 126, for example, it can have a portion directly contacting the other surface of the polarization-enhanced magnetic pattern 126. The polarization-enhanced magnetic pattern 126 can have perpendicular magnetization properties due to the magnetic anisotropy induced by the junction between the tunnel barrier pattern TBP and the polarization-enhanced magnetic pattern 126. The magnetization direction 126m of the polarization-enhanced magnetic pattern 126 can be substantially perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic structure FMS.

[0048] The polarization-enhancing magnetic pattern 126 can be ferromagnetically coupled to the second ferromagnetic pattern 124 via the second non-magnetic pattern 134. The second non-magnetic pattern 134 can couple the magnetization direction 126m of the polarization-enhancing magnetic pattern 126 to the magnetization direction 124m of the second ferromagnetic pattern 124 in such a way that the magnetization directions 126m and 124m are parallel to each other. For example, the magnetization direction 126m of the polarization-enhancing magnetic pattern 126 can be fixed parallel to the magnetization direction 124m of the second ferromagnetic pattern 124.

[0049] The tunnel barrier pattern (TBP) may include at least one of magnesium oxide (MgO), titanium oxide (TiO), aluminum oxide (AlO), magnesium zinc oxide (MgZnO), magnesium boron oxide (MgBO), titanium nitride (TiN), and vanadium nitride (VN). For example, the tunnel barrier pattern (TBP) may include magnesium oxide (MgO) having a sodium chloride (NaCl) crystal structure.

[0050] A free magnetic structure (FMS) may include at least one free magnetic pattern 150. The free magnetic pattern 150 may be in contact with a tunnel barrier pattern (TBP), for example, it may have a portion in direct contact with the TBP. The free magnetic pattern 150 may have perpendicular magnetization properties due to the magnetic anisotropy induced by the junction of the free magnetic pattern 150 and the TBP. The magnetization direction 150m of the free magnetic pattern 150 may be changed to be parallel or antiparallel to the magnetization direction 126m of the polarization-enhancing magnetic pattern 126. When the magnetization direction 126m of the polarization-enhancing magnetic pattern 126 is parallel to the magnetization direction 150m of the free magnetic pattern 150, the magnetic tunnel junction pattern (MTJ) may have a low resistance value. Conversely, when the magnetization direction 126m of the polarization-enhancing magnetic pattern 126 is antiparallel to the magnetization direction 150m of the free magnetic pattern 150, the MTJ may have a high resistance value. The free magnetic pattern 150 may include a magnetic material capable of inducing magnetic anisotropy at the interface between the free magnetic pattern 150 and the tunnel barrier pattern TBP. For example, the free magnetic pattern 150 may include cobalt-iron-boron (CoFeB).

[0051] An upper interlayer insulating layer 160 may be disposed on the lower interlayer insulating layer 102 to cover the sides of each of the bottom electrode BE, seed pattern 110, magnetic tunnel junction pattern MTJ, and top electrode TE. The upper interlayer insulating layer 160 may include at least one of oxides, nitrides, and oxide oxynitrides. An interconnect 180 may be disposed on the upper interlayer insulating layer 160. The interconnect 180 may be electrically connected to the magnetic tunnel junction pattern MTJ via the top electrode TE. The interconnect 180 may include at least one of a metal (e.g., titanium, tantalum, copper, aluminum, or tungsten) and a conductive metal nitride (e.g., titanium nitride or tantalum nitride). In some example embodiments, the interconnect 180 may be used as a bit line.

[0052] If the first pinned pattern 120 is formed of an alloy layer of non-magnetic and ferromagnetic elements or of a multilayer thin layer including non-magnetic and ferromagnetic layers, the non-magnetic elements in the first pinned pattern 120 may diffuse through subsequent heat treatment processes, thus potentially degrading the perpendicular magnetization performance of the first pinned pattern 120. Alternatively or additionally, if the first pinned pattern 120 is formed of the alloy layer or the multilayer thin layer, the surface roughness of the first pinned pattern 120 may increase. Therefore, the magnetic properties (e.g., exchange magnetic field (Hex) and / or switching performance) of the magnetic tunnel junction pattern MTJ may degrade.

[0053] However, according to some exemplary embodiments of the inventive concept, the first pinned pattern 120 may be composed of (or formed of) ferromagnetic elements or be a ferromagnetic pattern that is essentially composed of or includes ferromagnetic elements, and may not include non-magnetic elements. Since the first pinned pattern 120 does not include non-magnetic elements, the impact of subsequent heat treatment processes on the perpendicular magnetization performance of the first pinned pattern 120 can be minimized or reduced. For example, the first pinned pattern 120 may have stable perpendicular magnetization performance. Alternatively or additionally, since the first pinned pattern 120 is formed from a monolayer of ferromagnetic elements, the surface roughness of the first pinned pattern 120 can be reduced. Therefore, the magnetic properties (e.g., exchange magnetic field (Hex) and / or switching performance) of the magnetic tunnel junction pattern MTJ can be improved.

[0054] Furthermore, in the second pinned pattern 140, the polarization-enhanced magnetic pattern 126 can be ferromagnetically coupled to the second ferromagnetic pattern 124, and the first ferromagnetic pattern 122 and the second ferromagnetic pattern 124 can be antiferromagnetically coupled to each other. The ferromagnetic coupling of the polarization-enhanced magnetic pattern 126 and the second ferromagnetic pattern 124 improves the perpendicular magnetic anisotropy of the polarization-enhanced magnetic pattern 126, thus improving the tunneling magnetoresistivity ratio (TMR) of the magnetic tunnel junction pattern MTJ. The antiferromagnetic coupling of the first ferromagnetic pattern 122 and the second ferromagnetic pattern 124 reduces the net magnetic moment of the second pinned pattern 140, thus reducing the hysteresis field of the second pinned pattern 140. As a result, the distribution shift of the switching field (Hc) of the free magnetic structure FMS can be reduced, thus improving the switching performance of the magnetic tunnel junction pattern MTJ.

[0055] Figure 5 This is a cross-sectional view illustrating some exemplary embodiments of a magnetic storage device according to the inventive concept. In the following description, for ease of explanation, references will be primarily used. Figure 5 Described example implementations and references Figure 3 and Figure 4 Differences between the described example implementations.

[0056] refer to Figure 5 Seed pattern 110 may be disposed between magnetic tunnel junction pattern MTJ and bottom electrode BE. In some example embodiments, seed pattern 110 may include a first sub-pattern 112 adjacent to bottom electrode BE and a second sub-pattern 114 disposed between the first sub-pattern 112 and magnetic tunnel junction pattern MTJ. The first sub-pattern 112 may suppress the projection of the crystal structure of bottom electrode BE onto magnetic tunnel junction pattern MTJ. Therefore, the influence of the crystal structure of bottom electrode BE on the crystal growth of magnetic tunnel junction pattern MTJ may be minimized or reduced. At least a portion of the first sub-pattern 112 may be amorphous. For example, the first sub-pattern 112 may include at least one of tantalum (Ta), nickel (Ni), and chromium (Cr). The first sub-pattern 112 may also include non-metallic elements (e.g., boron (B) and / or carbon (C)). The second sub-pattern 114 may include a material that aids in the crystal growth of the magnetic tunnel junction pattern MTJ or the magnetic layer included in the magnetic tunnel junction pattern MTJ. For example, the second sub-pattern 114 may include at least one of chromium (Cr), iridium (Ir), and ruthenium (Ru).

[0057] A first pinned pattern 120 may be disposed between a seed pattern 110 and an exchange-coupled pattern 130. A second sub-pattern 114 may contact one surface of the first pinned pattern 120, for example, it may have a portion in direct contact with one surface of the first pinned pattern 120, and the exchange-coupled pattern 130 may contact the other surface of the first pinned pattern 120, for example, it may have a portion in direct contact with the other surface of the first pinned pattern 120. The first pinned pattern 120 may have perpendicular magnetization properties due to magnetic anisotropy induced by the junction of the second sub-pattern 114 with the first pinned pattern 120 and / or the junction of the exchange-coupled pattern 130 with the first pinned pattern 120. The second sub-pattern 114 may include a material that aids in the crystal growth of the first pinned pattern 120. The second sub-pattern 114 may include at least one of, for example, chromium (Cr), iridium (Ir), and ruthenium (Ru). Apart from the differences described above, other components and features of the magnetic storage device according to the exemplary embodiment may be consistent with those of the referenced material. Figure 3 and Figure 4 The corresponding components and features of the described magnetic storage devices are basically the same.

[0058] Figure 6 and Figure 7 This is a cross-sectional view illustrating a method of manufacturing a magnetic storage device according to some exemplary embodiments of the inventive concept. In the following text, for ease of explanation and convenience, references to... Figure 3 and Figure 4 The description of the same components and / or features in the example implementation.

[0059] refer to Figure 6 A lower interlayer insulating layer 102 may be formed on substrate 100. Substrate 100 may include a semiconductor substrate. For example, substrate 100 may include a silicon substrate, a germanium substrate, and / or a silicon-germanium substrate. Select elements (not shown) may be formed on substrate 100, and the lower interlayer insulating layer 102 may be formed to cover the select elements. The select elements may be field-effect transistors or diodes. A lower contact plug 104 may be formed in the lower interlayer insulating layer 102. The lower contact plug 104 may penetrate the lower interlayer insulating layer 102 to electrically connect to a terminal of a corresponding one of the select elements. In some example embodiments, the formation of the lower contact plug 104 may include forming a lower contact hole in the lower interlayer insulating layer 102 and forming a lower contact layer that fills the lower contact hole.

[0060] A bottom electrode layer (BEL) may be formed on the lower interlayer insulating layer 102. The bottom electrode layer BEL may include a conductive metal nitride such as titanium nitride and / or tantalum nitride. A seed layer 110L may be formed on the bottom electrode layer BEL. The seed layer 110L may include a material (e.g., iridium (Ir) or ruthenium (Ru)) that facilitates the crystal growth of the magnetic layer to be formed thereon. In some example embodiments, the seed layer 110L may include a first sublayer and a second sublayer stacked on the bottom electrode layer BEL. In this case, the first sublayer may be disposed between the bottom electrode layer BEL and the second sublayer. At least a portion of the first sublayer may be amorphous, and the second sublayer may include a material (e.g., iridium (Ir) or ruthenium (Ru)) that facilitates the crystal growth of the magnetic layer to be formed thereon. Each of the bottom electrode layer BEL and the seed layer 110L may be formed by a sputtering deposition process, a chemical vapor deposition (CVD) process, and / or an atomic layer deposition (ALD) process.

[0061] A first pinned layer 120L can be formed on the seed layer 110L. The first pinned layer 120L can be a monolayer ferromagnetic layer composed of (or formed of) ferromagnetic elements or essentially composed of or including ferromagnetic elements. The first pinned layer 120L may not include non-magnetic elements. For example, the first pinned layer 120L can be a monolayer of cobalt (Co). The first pinned layer 120L can be formed by sputtering deposition, CVD, and / or ALD processes. According to some exemplary embodiments of the inventive concept, since the first pinned layer 120L does not include non-magnetic elements, the deposition process for forming the first pinned layer 120L can be performed at room temperature.

[0062] An exchange coupling layer 130L can be formed on the first pinned layer 120L. The exchange coupling layer 130L may include a non-magnetic material with antiferromagnetic coupling properties and can be formed by sputtering deposition, CVD and / or ALD processes.

[0063] A second pinned layer 140L can be formed on the exchange coupling layer 130L. The second pinned layer 140L may include a first ferromagnetic layer 122L, a first nonmagnetic layer 132L, a second ferromagnetic layer 124L, a second nonmagnetic layer 134L, and a polarization-enhanced magnetic layer 126L sequentially stacked on the exchange coupling layer 130L. In some example embodiments, the first ferromagnetic layer 122L and the second ferromagnetic layer 124L may include the same ferromagnetic material as the first pinned layer 120L. The first ferromagnetic layer 122L and the second ferromagnetic layer 124L may not include nonmagnetic elements. Each of the first ferromagnetic layer 122L and the second ferromagnetic layer 124L may be a monolayer composed of (or formed of) ferromagnetic elements or essentially composed of or including ferromagnetic elements. For example, each of the first ferromagnetic layer 122L and the second ferromagnetic layer 124L may be a monolayer of cobalt (Co). The first nonmagnetic layer 132L may comprise a nonmagnetic material with antiferromagnetic coupling properties, and the second nonmagnetic layer 134L may comprise a nonmagnetic material with ferromagnetic coupling properties. The polarization-enhanced magnetic layer 126L may comprise a magnetic material capable of inducing interfacial perpendicular magnetic anisotropy. The second pinned layer 140L may be formed by sputtering deposition, CVD, and / or ALD processes. According to some exemplary embodiments of the inventive concept, since the first ferromagnetic layer 122L and the second ferromagnetic layer 124L do not contain nonmagnetic elements, the deposition process for forming the second pinned layer 140L can be performed at room temperature.

[0064] The first pinned layer 120L, the exchange coupling layer 130L, and the second pinned layer 140L can constitute or be included in the reference magnetic structure layer RMSL. According to some exemplary embodiments of the inventive concept, since the first pinned layer 120L, the first ferromagnetic layer 122L, and the second ferromagnetic layer 124L do not contain non-magnetic elements, the deposition process for forming the reference magnetic structure layer RMSL can be performed at room temperature. Furthermore, since the first pinned layer 120L is formed from a monolayer of ferromagnetic elements, the thickness RML_T of the reference magnetic structure layer RMSL can be reduced.

[0065] A tunnel barrier layer (TBL) can be formed on a reference magnetic structure layer (RML). The TBL may include at least one of a magnesium oxide (MgO) layer, a titanium oxide (TiO) layer, an aluminum oxide (AlO) layer, a magnesium zinc oxide (MgZnO) layer, and a magnesium boron oxide (MgBO) layer, and can be formed using, for example, a sputtering deposition process.

[0066] A free magnetic layer (FML) can be formed on the tunnel barrier layer (TBL). The FML can be deposited in an amorphous state and may include, for example, cobalt-iron-boron (CoFeB). The FML can be formed by sputtering deposition, CVD, and / or ALD processes. The FML can be crystallized using the TBL as a seed crystal through a subsequent heat treatment process.

[0067] The reference magnetic structure layer RMSL, tunnel barrier layer TBL, and free magnetic layer FML can constitute or be included in the magnetic tunnel junction layer MTJL. A conductive mask pattern 185 can be formed on the magnetic tunnel junction layer MTJL. For example, the conductive mask pattern 185 may include at least one of tungsten, titanium, tantalum, aluminum, and metal nitrides (e.g., titanium nitride or tantalum nitride). The conductive mask pattern 185 may define the region in which the magnetic tunnel junction pattern will be formed.

[0068] refer to Figure 7 An etching process for etching the magnetic tunnel junction layer (MTJL) can be performed using a conductive mask pattern 185 as an etching mask. The etching process can be, for example, an ion beam etching process. The MTJL, seed layer 110L, and bottom electrode layer BEL can be sequentially etched using the etching process. Etching of the MTJL may include sequentially etching the free magnetic layer FML, tunnel barrier layer TBL, and reference magnetic structure layer RMSL. According to an embodiment of the inventive concept, since the first pinned layer 120L is a monolayer formed of ferromagnetic elements, the thickness RML_T of the reference magnetic structure layer RMSL can be reduced. Therefore, the process margin of the etching process can be increased.

[0069] A magnetic tunnel junction pattern (MTJ), a seed pattern 110, and a bottom electrode (BE) can be sequentially formed using an etching process. The MTJ may include a reference magnetic structure (RMS), a tunnel barrier pattern (TBP), and a free magnetic structure (FMS) sequentially stacked on the seed pattern 110. The RMS may include a first pinned pattern 120, a second pinned pattern 140 between the first pinned pattern 120 and the tunnel barrier pattern (TBP), and an exchange coupling pattern 130 between the first pinned pattern 120 and the second pinned pattern 140. The second pinned pattern 140 may include a first ferromagnetic pattern 122 between the exchange coupling pattern 130 and the tunnel barrier pattern TBP, a second ferromagnetic pattern 124 between the first ferromagnetic pattern 122 and the tunnel barrier pattern TBP, a polarization-enhanced magnetic pattern 126 between the second ferromagnetic pattern 124 and the tunnel barrier pattern TBP, a first nonmagnetic pattern 132 between the first ferromagnetic pattern 122 and the second ferromagnetic pattern 124, and a second nonmagnetic pattern 134 between the second ferromagnetic pattern 124 and the polarization-enhanced magnetic pattern 126.

[0070] After the etching process, a portion of the conductive mask pattern 185 can be retained on the magnetic tunnel junction pattern MTJ, and the retained portion of the conductive mask pattern 185 can be used as the top electrode TE.

[0071] According to embodiments of the inventive concept, since the first pinned layer 120L, the first ferromagnetic layer 122L, and the second ferromagnetic layer 124L do not contain non-magnetic elements, the deposition process for forming the reference magnetic structure layer RMSL can be performed at room temperature. Furthermore, since the first pinned layer 120L is a monolayer composed of (or formed of) ferromagnetic elements, or essentially composed of ferromagnetic elements, or including ferromagnetic elements, the thickness RML_T of the reference magnetic structure layer RMSL can be reduced. Therefore, the process margin of the etching process for forming the magnetic tunnel junction pattern MTJ can be increased. Thus, mass production of magnetic storage devices can be easily achieved.

[0072] Refer again Figure 3 An upper interlayer insulating layer 160 can be formed on the lower interlayer insulating layer 102 to cover the sides of each of the bottom electrode BE, seed pattern 110, magnetic tunnel junction pattern MTJ, and top electrode TE. An upper interconnect 180 can be formed on the upper interlayer insulating layer 160. The interconnect 180 can be electrically connected to the magnetic tunnel junction pattern MTJ via the top electrode TE.

[0073] Figure 8 This is a cross-sectional view showing some example embodiments of a magnetic storage device according to the inventive concept. Figure 9 It is shown Figure 8 An enlarged view of the reference magnetic structure of the magnetic storage device. In the following text, for ease of explanation, the present embodiment and the reference embodiment will be primarily described. Figure 3 and Figure 4 The differences between the above-described implementation methods.

[0074] refer to Figure 8 and Figure 9 The magnetic tunnel junction pattern (MTJ) may include a reference magnetic structure (RMS), a free magnetic structure (FMS), and a tunnel barrier pattern (TBP) between them. In some example embodiments, the free magnetic structure (FMS) may be disposed between the bottom electrode (BE) and the tunnel barrier pattern (TBP), and the reference magnetic structure (RMS) may be disposed between the top electrode (TE) and the tunnel barrier pattern (TBP).

[0075] The reference magnetic structure RMS may include a first pinned pattern 120, a second pinned pattern 140 between the first pinned pattern 120 and the tunnel barrier pattern TBP, and an exchange-coupled pattern 130 between the first pinned pattern 120 and the second pinned pattern 140. The second pinned pattern 140 may include a first ferromagnetic pattern 122 between the exchange-coupled pattern 130 and the tunnel barrier pattern TBP, a second ferromagnetic pattern 124 between the first ferromagnetic pattern 122 and the tunnel barrier pattern TBP, a polarization-enhancing magnetic pattern 126 between the second ferromagnetic pattern 124 and the tunnel barrier pattern TBP, a first nonmagnetic pattern 132 between the first ferromagnetic pattern 122 and the second ferromagnetic pattern 124, and a second nonmagnetic pattern 134 between the second ferromagnetic pattern 124 and the polarization-enhancing magnetic pattern 126.

[0076] In some example embodiments, a first pinned pattern 120 may be disposed between the top electrode TE and the exchange-coupled pattern 130. The exchange-coupled pattern 130 may contact a surface of the first pinned pattern 120, for example, it may have a portion in direct contact with a surface of the first pinned pattern 120, and the first pinned pattern 120 may have perpendicular magnetization properties due to the magnetic anisotropy induced by the junction of the exchange-coupled pattern 130 and the first pinned pattern 120. Although not shown in the figures, an additional nonmagnetic pattern may be disposed between the top electrode TE and the first pinned pattern 120. The additional nonmagnetic pattern may include at least one of, for example, iridium (Ir) and ruthenium (Ru). In this case, the first pinned pattern 120 may have perpendicular magnetization properties due to the magnetic anisotropy induced by the junction of the additional nonmagnetic pattern and the first pinned pattern 120 and / or the junction of the exchange-coupled pattern 130 and the first pinned pattern 120.

[0077] Apart from the differences described above, other components and features of the magnetic storage device according to this embodiment can be compared with those in the reference. Figure 3 and Figure 4 The corresponding components and features of the described magnetic storage devices are basically the same.

[0078] Figure 10 and Figure 11 This is a cross-sectional view illustrating a method of manufacturing a magnetic storage device according to some exemplary embodiments of the inventive concept. In the following description, for ease of explanation, this embodiment and the referenced embodiment will be described primarily. Figure 6 and Figure 7 The differences between the above-described implementation methods.

[0079] refer to Figure 10A bottom electrode layer (BEL) can be formed on the lower interlayer insulating layer 102. A free magnetic layer (FML) and a tunnel barrier layer (TBL) can be sequentially formed on the bottom electrode layer (BEL). The free magnetic layer (FML) can be disposed between the bottom electrode layer (BEL) and the tunnel barrier layer (TBL).

[0080] A reference magnetic structure layer RMSL can be formed on the tunnel barrier layer (TBL). The formation of the reference magnetic structure layer RMSL may include sequentially depositing a second pinned layer 140L, an exchange coupling layer 130L, and a first pinned layer 120L on the TBL. The deposition of the second pinned layer 140L may include sequentially depositing an oxidizing magnetic layer 126L, a second non-magnetic layer 134L, a second ferromagnetic layer 124L, a first non-magnetic layer 132L, and a first ferromagnetic layer 122L on the TBL.

[0081] The reference magnetic structure layer RMSL, the tunnel barrier layer TBL, and the free magnetic layer FML can constitute or be included in the magnetic tunnel junction layer MTJL. A conductive mask pattern 185 can be formed on the magnetic tunnel junction layer MTJL. The conductive mask pattern 185 can be formed on the first pinned layer 120L of the reference magnetic structure layer RMSL.

[0082] refer to Figure 11 A conductive mask pattern 185 can be used as an etching mask to perform an etching process for etching a magnetic tunnel junction layer (MTJL). The MTJL and bottom electrode layer (BEL) can be sequentially etched to form a magnetic tunnel junction pattern (MTJ) and a bottom electrode (BE). The MTJ may include a free magnetic structure (FMS), a tunnel barrier pattern (TBP), and a reference magnetic structure (RMS) sequentially stacked on the bottom electrode (BE). After the etching process, a portion of the conductive mask pattern 185 may remain on the MTJ, and this retained portion can be used as a top electrode (TE). Other processes and / or features of the fabrication method according to the example embodiment, besides the arrangement of the free magnetic structure (FMS) and the reference magnetic structure (RMS), may be related to the reference magnetic structure (RMS). Figure 6 and Figure 7 The corresponding processes and / or features of the described manufacturing methods are substantially the same.

[0083] According to embodiments of the inventive concept, the reference magnetic structure of a magnetic tunnel junction pattern may include a first pinned pattern, a second pinned pattern, and an exchange-coupled pattern therebetween. The first pinned pattern may be composed of (or formed of) ferromagnetic elements, or be essentially composed of or include ferromagnetic elements, and may not include non-magnetic elements. Therefore, the first pinned pattern can have stable perpendicular magnetization properties, and the surface roughness of the first pinned pattern can be reduced. Thus, the magnetic properties (e.g., exchange magnetic field (Hex) and / or switching performance) of the magnetic tunnel junction pattern can be improved. As a result, magnetic storage devices with improved or superior properties can be provided.

[0084] The deposition process for forming the first pinned pattern can be performed at room temperature. Furthermore, the first pinned pattern can be formed from a monolayer composed of (or made of) ferromagnetic elements, or essentially composed of ferromagnetic elements, or including ferromagnetic elements, thus reducing the thickness of the reference magnetic structure. As a result, the process margin of the etching process used to form the magnetic tunnel junction pattern can be improved. Therefore, magnetic storage devices can be easily or more readily mass-produced / manufactured.

[0085] Although the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative. Consequently, the scope of the inventive concept will be determined by the widest permissible interpretation of the following claims and their equivalents, and should not be limited or restricted by the foregoing description.

[0086] This application claims priority to Korean Patent Application No. 10-2019-0087335, filed on July 19, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A magnetic storage device, comprising: The reference magnetic structure includes a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern; Free magnetic structure; as well as The tunnel barrier pattern between the reference magnetic structure and the free magnetic structure The second pinned pattern is located between the first pinned pattern and the tunnel barrier pattern. The second nailed pattern includes: A first ferromagnetic pattern between the exchange coupling pattern and the tunnel barrier pattern; A second ferromagnetic pattern between the first ferromagnetic pattern and the tunnel barrier pattern; A first nonmagnetic pattern between the first ferromagnetic pattern and the second ferromagnetic pattern; and A second non-magnetic pattern between the second ferromagnetic pattern and the tunnel barrier pattern. The exchange-coupled pattern antiferromagnetically couples the first ferromagnetic pattern to the first pinned pattern, and the first non-magnetic pattern antiferromagnetically couples the second ferromagnetic pattern to the first ferromagnetic pattern. The first pinned pattern, the first ferromagnetic pattern, and the second ferromagnetic pattern are each a single layer of cobalt. The first pinned pattern has vertical magnetization properties.

2. The magnetic storage device according to claim 1, wherein, Each of the first pinned pattern and the first ferromagnetic pattern has a thickness in a direction perpendicular to the interface between the tunnel barrier pattern and the free magnetic structure, and Wherein, the thickness of the first nailed pattern is greater than or equal to the thickness of the first ferromagnetic pattern.

3. The magnetic storage device according to claim 2, wherein, The second ferromagnetic pattern has a thickness in the direction perpendicular to the interface between the tunnel barrier pattern and the free magnetic structure, and The thickness of the first nailed pattern is greater than the thickness of the second ferromagnetic pattern.

4. The magnetic storage device according to claim 3, wherein, The thickness of the first ferromagnetic pattern is greater than the thickness of the second ferromagnetic pattern.

5. The magnetic storage device according to claim 1, in, The second nailed pattern also includes: A polarization-enhanced magnetic pattern between the second ferromagnetic pattern and the tunnel barrier pattern. The second non-magnetic pattern lies between the second ferromagnetic pattern and the polarization-enhanced magnetic pattern. The second non-magnetic pattern ferromagnetically couples the polarization-enhanced magnetic pattern to the second ferromagnetic pattern.

6. The magnetic storage device according to claim 5, wherein, The first non-magnetic pattern includes non-magnetic elements with antiferromagnetic coupling properties, and the second non-magnetic pattern includes non-magnetic elements with ferromagnetic coupling properties.

7. The magnetic storage device according to claim 1, further comprising: A seed pattern spaced apart from the tunnel barrier pattern, and the reference magnetic structure interposed between the tunnel barrier pattern and the seed pattern. Wherein the first pinned pattern is between the seed pattern and the exchange coupling pattern, and The seed pattern includes a portion that contacts one surface of the first pinned pattern.

8. The magnetic storage device according to claim 7, wherein, The seed crystal pattern includes: First sub-pattern; and The second sub-pattern is located between the first sub-pattern and the first pinned pattern, and has a portion that contacts the first pinned pattern. At least a portion of the first sub-pattern is amorphous.

9. A magnetic storage device, comprising: The reference magnetic structure includes a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern; Free magnetic structure; as well as The tunnel barrier pattern between the reference magnetic structure and the free magnetic structure The second pinned pattern is located between the first pinned pattern and the tunnel barrier pattern. The second nailed pattern includes: A first ferromagnetic pattern between the exchange coupling pattern and the tunnel barrier pattern; A second ferromagnetic pattern between the first ferromagnetic pattern and the tunnel barrier pattern; A first nonmagnetic pattern between the first ferromagnetic pattern and the second ferromagnetic pattern; and A second non-magnetic pattern between the second ferromagnetic pattern and the tunnel barrier pattern. The first pinned pattern, the first ferromagnetic pattern, and the second ferromagnetic pattern are each a single layer of cobalt. The first pinned pattern has vertical magnetization properties.

10. The magnetic storage device according to claim 9, in, The exchange coupling pattern antiferromagnetically couples the first ferromagnetic pattern to the first pinned pattern.

11. The magnetic storage device according to claim 10, wherein, Each of the first pinned pattern and the first ferromagnetic pattern has a thickness in a direction perpendicular to the interface between the tunnel barrier pattern and the free magnetic structure, and Wherein, the thickness of the first nailed pattern is greater than or equal to the thickness of the first ferromagnetic pattern.

12. The magnetic storage device according to claim 10, in, The first non-magnetic pattern antiferromagnetically couples the second ferromagnetic pattern to the first ferromagnetic pattern.

13. The magnetic storage device according to claim 12, wherein, Each of the first pinned pattern, the first ferromagnetic pattern, and the second ferromagnetic pattern has a thickness in a direction perpendicular to the interface between the tunnel barrier pattern and the free magnetic structure. Wherein, the thickness of the first nailed pattern is greater than or equal to the thickness of the first ferromagnetic pattern, and greater than the thickness of the second ferromagnetic pattern.

14. The magnetic storage device according to claim 12, in, The second nailed pattern also includes: A polarization-enhanced magnetic pattern between the second ferromagnetic pattern and the tunnel barrier pattern. Wherein, the second non-magnetic pattern lies between the second ferromagnetic pattern and the polarization-enhanced magnetic pattern, and The second non-magnetic pattern ferromagnetically couples the polarization-enhanced magnetic pattern to the second ferromagnetic pattern.

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