Flexible circuit substrate with roughened solder mask and manufacturing method thereof
By using partially covered solder-proof layer and tin layer structure in the manufacturing of soft line substrates, whisker short circuit, hole breakage and other practical problems in the prior art are solved, and higher production efficiency and crimp quality are achieved.
Patent Information
- Application Number
- CN201910662768.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2019-07-22
- Publication Date
- 2025-05-23
- Estimated Expiration
- 2039-07-22
AI Technical Summary
The existing flexible substrate circuits form whiskers on the surface of the tin-plated layer, causing short circuits, and holes in the interface of the solder-proof ink and the tin-plated layer cause the circuit to break. In practice, the existing technology has problems such as unfavorable bending products, immersion of the top-layer solder-proof ink in the tin-plated tank to increase the risk of holes, difficulty in arranging production lines, and thick edges of the solder-proof ink affect crimping.
A novel soft line substrate manufacturing method is adopted, including providing a conductive copper layer with a wiring pattern, forming a first solder-proof layer partially covering the wiring pattern, forming a first tin layer and a second tin layer, and finally forming a second solder-proof layer to cover part of the tin layer and the solder-proof layer, and performing a surface roughening process to reduce the height difference between the outer pin and the solder-proof layer.
It effectively avoids the problem that the hardness of the tin plating layer is unfavorable to the bent products, reduces the risk of holes in the interface between the top-layer solder-proof ink and the tin plating layer, reduces the production cost and the complexity of the driving line arrangement, and improves the crimping quality of the outer pin and the monitor conductive glass substrate.
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Figure CN112259461B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a flexible circuit substrate, in particular to a flexible circuit substrate capable of carrying a semiconductor chip. Background Art
[0002] The flexible circuit substrate used to carry the chip is mostly a rolled strip film. In the industry, the combination of flexible circuit substrate and chip has various names according to different assembly modes, such as TCP (Tape Carrier Package) or COF (Chip On Film). TCP and COF both use flexible circuit substrate as the carrier of the packaged chip, and the gold bump on the chip is connected to the inner lead of the copper wiring pattern on the flexible substrate circuit through thermal compression.
[0003] In order to connect the flexible substrate circuit to the gold bump of the chip, the presence of gold-tin eutectic is necessary, where gold is provided by the gold bump of the chip and tin is provided by the tin formed on the surface of the inner pin. Therefore, the surface of the inner pin is plated with a tin layer. In addition to the inner pin, the copper wiring pattern also has conductive terminals such as outer pins that connect to other electronic components, and these terminals are also plated with tin. The parts of the copper wiring pattern that are not plated with tin will be covered with solder mask ink for protection.
[0004] Existing flexible substrate circuits are prone to the following problems: one is the formation of whiskers on the surface of the tin-plated layer, which causes a short circuit between adjacent circuits; the other is the formation of pits at the interface between the solder resist ink and the tin-plated layer, which causes circuit breakage. Patent document 1 (Japanese patent JP3061613) discloses a solution that first forms a thin tin-plated layer (a) on the copper wiring pattern, then applies solder resist ink to the non-pin area of the wiring pattern, and then forms a thick tin-plated layer (b) on the pin area. Patent document 1 believes that the thin tin-plated layer (a) formed on the entire copper wiring pattern can prevent the formation of pits, and the thick tin-plated layer (b) can prevent the formation of whiskers. Patent document 2 (Taiwan patent TW531864) discloses another method, which is to sequentially form a first solder resist ink on the non-pin area, form a thin tin-plated layer on the pin area, then form a second solder resist ink to cover the interface between the first solder resist ink and the thin tin layer, and finally form a thick tin-plated layer on the thin tin layer. Summary of the invention
[0005] After research, the inventors of this case found that the above-mentioned prior art still has many problems in practice. For example, the thin tin-plated layer formed on the entire copper wiring pattern in Patent Document 1 is not conducive to products that need to be bent because the hardness of the tin-plated layer is usually high. Furthermore, both Patent Document 1 and Patent Document 2 state that a thick tin-plated layer is formed after the solder mask ink is finally applied, so the top layer of solder mask ink will still be immersed in the tin-plating bath for a period of time, especially the thick tin-plating time is longer, which increases the chance of pits at the interface between the top layer of solder mask ink and the thick tin-plated layer. In addition, Patent Document 2 has a process of applying solder mask ink twice before entering the tin bath, resulting in a high cost for cleaning the tin bath contaminated by solder mask ink. In addition, the staggered implementation of the two solder mask ink and two tin-plating processes described in Patent Document 2 is easy to confuse in practice, causing trouble in the arrangement of production lines. In addition, the inventors of this case have also found that the existing practice of applying solder mask ink twice is easy to cause the solder mask ink to have a thick edge in practice. When the outer pins of COF are to be crimped to the conductive glass substrate of the display, they are easily affected by the thick edges of the solder mask ink, resulting in poor crimping.
[0006] In view of the above, on one hand, the present invention proposes a novel method for manufacturing a flexible circuit substrate, which does not require two solder mask inks and two tinning processes to be performed alternately. The present invention also applies a top layer of solder mask ink after the last tin layer is completed to prevent the top layer of solder mask ink from being soaked in the tinning tank. At the same time, the present invention further roughens the solder mask layer to reduce the height difference between the external pins and the solder mask layer, thereby improving the phenomenon of poor crimping.
[0007] According to one embodiment, the present invention provides a method for manufacturing a flexible circuit substrate for carrying a chip, which comprises the following steps in sequence:
[0008] (a) providing a conductive copper layer having a wiring pattern on an insulating substrate;
[0009] (b) forming a first solder resist layer to partially cover the wiring pattern;
[0010] (c) forming a first tin layer on the conductive copper layer using the first solder mask as a shield;
[0011] (d) forming a second tin layer on the first tin layer using the first solder mask as a shield; and
[0012] (e) forming a second solder resist layer partially covering the second tin layer and at least partially covering the first solder resist layer; and
[0013] (f) Roughening the second solder resist layer so that the second solder resist layer has a roughened surface.
[0014] According to one embodiment, the present invention provides the aforementioned manufacturing method, wherein there is no step of forming a solder mask layer between the step (c) and the step (d).
[0015] According to one embodiment, the present invention provides the aforementioned manufacturing method, wherein the first solder mask layer at least partially covers the second tin layer through the step (d).
[0016] According to one embodiment, the present invention provides the aforementioned manufacturing method, wherein through the step (d), the interface between the first tin layer and the second tin layer is conformal to the interface between the first tin layer and the conductive copper layer.
[0017] According to one embodiment, the present invention provides a manufacturing method as described above, wherein the second solder resist layer is not in contact with the tin plating solution.
[0018] In another aspect, the present invention provides a method for manufacturing a flexible circuit substrate, which reduces the coating area of the first solder mask layer or the second solder mask layer to reduce the amount of solder mask ink contamination to the tin bath. For example, the first solder mask layer can be selectively coated only on the area of the flexible circuit substrate that will be bent when the product is applied; or the second solder mask layer can selectively cover the outer edge of the first solder mask layer without completely covering the first solder mask layer.
[0019] According to one embodiment, the present invention provides a method for manufacturing a flexible circuit substrate for carrying a chip, which comprises the following steps in sequence:
[0020] (a) providing a conductive copper layer having a wiring pattern on an insulating substrate, wherein the wiring pattern has a test pin area, an inner pin area and an outer pin area;
[0021] (b) forming a first solder resist layer to partially cover the wiring pattern, wherein the first solder resist layer does not cover the wiring pattern between the test pin area and the inner pin area;
[0022] (c) forming a first tin layer on the conductive copper layer using the first solder mask as a shield;
[0023] (d) forming a second tin layer on the first tin layer using the first solder mask as a shield;
[0024] (e) forming a second solder resist layer partially covering the second tin layer and at least partially covering the first solder resist layer; and
[0025] (f) Roughening the second solder resist layer so that the second solder resist layer has a roughened surface.
[0026] According to one embodiment, the present invention provides the manufacturing method as described above, wherein in the step (e), the second solder mask layer does not completely cover the first solder mask layer.
[0027] In another aspect, the present invention further includes various structures of flexible circuit substrates formed by the various methods described above. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] Figure 1A The figure is a top view of a semi-finished flexible circuit substrate according to an embodiment of the present invention.
[0029] Figure 1B for Figure 1A A schematic cross-sectional view of a specific area of a semi-finished product.
[0030] Figure 1B and Figures 2 to 6 The cross-sectional view of each step of the manufacturing process of a flexible circuit substrate according to an embodiment of the present invention is shown.
[0031] Figure 7 FIG. 4 is a schematic structural diagram of a flexible circuit substrate according to an embodiment of the present invention. DETAILED DESCRIPTION
[0032] The following will refer to the attached drawings to demonstrate the preferred embodiments of the present invention. In order to avoid blurring the content of the present invention, the following description also omits existing components, related materials, and related processing technologies. At the same time, in order to clearly illustrate the present invention, the components in the attached drawings may not be drawn according to the actual size or relative proportion.
[0033] Method for manufacturing flexible circuit substrate of the present invention
[0034] According to the first embodiment of the present invention, a method for manufacturing a flexible circuit substrate for carrying a chip comprises the following steps:
[0035] Step (a) providing a conductive copper layer having a wiring pattern on an insulating substrate;
[0036] Step (b) forming a first solder resist layer to partially cover the wiring pattern;
[0037] Step (c) forming a first tin layer on the conductive copper layer using the first solder mask as a shield;
[0038] Step (d) forming a second tin layer on the first tin layer using the first solder mask as a shield;
[0039] Step (e) forming a second solder mask layer partially covering the second tin layer and at least partially covering the first solder mask layer; and
[0040] Step (f) roughens the second solder resist layer so that the second solder resist layer has a roughened surface.
[0041] Step (a) provides a conductive copper layer with a wiring pattern on an insulating substrate.
[0042] Figure 1A FIG. 1 is a top view of a semi-finished flexible circuit substrate 10 of the present invention. Figure 1AA plurality of wiring patterns P composed of a conductive copper layer 110 are continuously formed on one surface of a film-belt-shaped insulating substrate 100 of a semi-finished soft circuit substrate 10. The insulating substrate 100 has a plurality of transmission holes 101 for transfer on the upper and lower sides. The conductive copper layer 110 (or wiring pattern P) defines a non-pin area Ps (the portion framed by a dotted line), which will be covered by a solder mask to protect the circuit later. The area outside the non-pin area Ps of the wiring pattern P, namely the pin area, can be further divided into an inner pin area Ln, an outer pin area Lo, and a test pin area Lt that exists as needed. The inner pin area Ln will be connected to the chip, the outer pin area Lo will be connected to an external circuit board or other electronic device, and the test pin area Lt is used to connect to a measuring instrument to detect the quality of the packaged chip. Figure 1B for Figure 1A The cross-sectional view of the area indicated by arrow 1B (i.e. one of the lines of the wiring pattern P). Figure 1B , it can be clearly understood that the conductive copper layer 110 is located on the insulating substrate 100. The insulating substrate 100 can use a soft material that is resistant to chemicals and heat, such as polyester, polyamide, polyimide, etc. The thickness of the insulating substrate 100 is generally 12 to 85um, preferably 20 to 50um. The conductive copper layer 110 with the wiring pattern P is formed on the insulating substrate 100 by the existing lithography method. The thickness of the conductive copper layer 110 is, for example, 2 to 20um, preferably 5 to 12um.
[0043] Step (b) forms a first solder resist layer to partially cover the wiring pattern.
[0044] refer to Figure 1A and Figure 2 , forming a first solder mask 121 so that it at least partially covers the wiring pattern P, for example, covers a part or all of the non-pin area Ps. In a preferred embodiment, the first solder mask 121 only needs to be applied to certain specific areas of the non-pin area Ps, for example, only needs to be applied to the bending area generated when the flexible circuit substrate product is applied at the back end. The actual position of this bending area varies depending on the characteristics of the back-end application product, wherein the area between the inner pin area Ln and the outer pin area Lo is the existing common bending area. Therefore, in a preferred embodiment of the present invention, the first solder mask 121 does not cover the non-pin area Ps between the test pin area Lt and the inner pin area Ln, but the present invention is not limited to this. The present invention also has an embodiment in which the first solder mask 121 completely covers all non-pin areas Ps. This step can be completed by screen printing technology using existing epoxy resin (o-Cresol Novalac / Phenol / DGEBA) type ink or other suitable ink. The thickness of the first solder mask 121 can be in the range of 3 to 15um.
[0045] Step (c) forms a first tin layer on the conductive copper layer using the first solder mask as a shield.
[0046] refer to Figure 3 , a first tin layer 131 is formed on the conductive copper layer 110 with the first solder mask 121 as a shield. The first tin layer 131 is formed by the existing electroless plating (i.e. chemical plating) technology. For example, the semi-finished product formed in step (b) is immersed in a tin bath containing a tin plating solution of sulfuric acid, potassium persulfate, or tin borofluoride for a predetermined period of time, then washed with water and blown dry, and then put into an oven for heat treatment. In this step, in addition to plating the first tin layer 131 on the surface of the conductive copper layer 110 not covered by the first solder mask 121, the tin plating solution can be further allowed to invade the conductive copper layer 110 under the first edge 121a of the first solder mask 121, thereby forming a structure in which the first edge 121a of the first solder mask 121 covers the first side 131a of the first tin layer 131. The thickness of the first tin layer 131 can be in the range of 0.02 to 0.16um, and the thickness of the first tin layer 131 in the preferred embodiment is 0.10um.
[0047] Step (d): forming a second tin layer on the first tin layer using the first solder mask as a shield.
[0048] refer to Figure 4 , using the first solder mask 121 as a shield to form a second tin layer 133 on the first tin layer 131. Preferably, there is no additional step of forming a solder mask between step (c) and step (d). The second tin layer 133 can be formed by existing electroless plating (i.e. chemical plating) technology as in step (c). For example, the semi-finished product formed in step (c) is immersed in a tin bath containing a tin plating solution of sulfuric acid, potassium persulfate, or tin borofluoride for a predetermined period of time, then washed with water and dried, and then placed in an oven for heat treatment. The tin-copper alloy layer obtained by the first tin plating in step (c) will generate Cu through the high temperature of heat treatment. 3 Sn, which can slow down the Cu of the tin layer produced by the second tin plating in step (d). 6 Sn 5The generation and diffusion rate of the pure tin layer is reduced, thereby slowing down the loss rate of the pure tin layer, improving the yield of eutectic bonding between the circuit and the chip, and avoiding the generation of tin whiskers. In this step, the tin plating liquid can be further allowed to invade under the first edge 121a of the first solder mask 121, forming a structure in which the first edge 121a of the first solder mask 121 covers the second side 132a of the second tin layer 132. The thickness of the second tin layer 132 can be in the range of 0.12 to 0.5um, and the thickness of the first tin layer 132 in the preferred embodiment is 0.28um. Because both steps (c) and (d) use electroless plating (i.e., chemical plating) technology, and both use the first solder mask 121 as a shield, in step (d), the first tin layer 131 will be pushed to the area with high copper density by the second tin layer 132, so that the interface Iss between the first tin layer 131 and the second tin layer 132 is conformal to the interface Isc between the first tin layer 131 and the conductive copper layer 110.
[0049] Step (e) forms a second solder mask layer to partially cover the second tin layer and at least partially cover the first solder mask layer.
[0050] refer to Figure 5 , forming a second solder mask 122 that partially covers the second tin layer 132 and at least partially covers the first solder mask 121. Preferably, in this step, the second solder mask 122 is formed to at least cover the contact surface formed by the second tin layer 132 and the first solder mask 121 in step (d). In step (d), the first solder mask 121 is immersed in the tin bath, which may weaken the contact surface between the first solder mask 121 and the second tin layer 132. Therefore, covering this contact surface with the second solder mask 122 can prevent the solder mask from peeling off from the tin layer. This step can be completed using existing epoxy resin (o-Cresol Novalac / Phenol / DGEBA type) type ink or other suitable ink using screen printing technology. The thickness of the second solder mask 122 can be in the range of 3 to 20um. In this embodiment, the second solder mask 122 is printed on the entire non-pin area Ps so that it completely covers the first solder mask 121, but the present invention is not limited to this. The present invention also includes an embodiment in which the second solder mask layer 122 only partially covers the first solder mask layer 121 (only covers the outer edge thereof) and partially covers the second tin layer 132 .
[0051] (f) Roughening the second solder resist layer so that the second solder resist layer has a roughened surface.
[0052] refer to Figure 6After the second solder mask 122 is printed and heat-treated and cured, a surface roughening step is performed to form a second solder mask 122' having a roughened surface 601. Any suitable method may be used to complete this step. For example, a physical roughening method such as a ball method, a brushing method or a frosting method is used. Preferably, a positioning differential brushing method is used. This method can control the distance between the brushing equipment and the surface of the second solder mask 122 to maintain a continuous and constant range through an aluminum oxide abrasive or a silicon carbide abrasive, thereby performing elastic brushing and light cutting to achieve a roughening effect. Because there is a height difference between the second solder mask 122 and the second tin layer 132, the tin layer or the wiring pattern will not be ground during grinding. If Figure 6 As shown, after roughening, the height difference between the second tin layer 132 and the second solder mask 122' decreases, which can improve the phenomenon of poor crimping. Moreover, the surface of the second solder mask 122' has a high roughness, which can also increase the surface area and strengthen the degree of bonding between it and the potting glue. The potting glue is usually used to cover the inner pin area Ln, which needs to be tightly combined with the solder mask to protect the IC chip and the circuit connected to the inner pin. In this embodiment, preferably, the surface roughness Rz of the roughened surface 601 of the second solder mask 122' ranges from 0.04 to 5.0 μm, preferably ranges from 0.16 to 4.5 μm, and more preferably ranges from 0.6 to 4.0 μm.
[0053] The surface roughness Rz is measured by cutting the roughened sample into a size of about 5cm×5cm and measuring it with a non-contact shape measurement laser microscope (KEYENCE Taiwan Keynes Model VK-X100). The measurement is performed with a laser spot diameter of about 1um, an objective lens magnification of 10X, a field of view of 1350um x 1012um, and an objective lens magnification of 20X, a field of view of 675um x 506um, a scanning time of about 10 to 20 seconds, and a line pitch of 2um.
[0054] Structure of the flexible circuit substrate of the present invention
[0055] Also refer to Figure 1A and Figure 6In the first embodiment, the flexible circuit substrate for carrying a chip of the present invention includes a conductive copper layer 110 with a wiring pattern P on an insulating substrate 100; a first tin layer 131 is located above the conductive copper layer 110; a second tin layer 132 is located above the first tin layer 131; a first solder mask 121 covers the conductive copper layer 110 not covered by the first tin layer 131 and the second tin layer 132, and the first solder mask 121 partially covers the second tin layer 132; and a second solder mask 122' partially covers the second tin layer 132 and at least partially covers the first solder mask 121, wherein the second solder mask 122' has a roughened surface 601, and the surface roughness Rz of the roughened surface 601 ranges from 0.04 to 5 μm, preferably ranges from 0.16 to 4.5 μm, and more preferably ranges from 0.6 to 4.0 μm.
[0056] In another embodiment, reference may be made to Figure 6 The present invention provides a flexible circuit substrate for carrying a chip, wherein the first solder mask layer 121 has a first edge 121 a contacting the second tin layer 132 .
[0057] In another embodiment, reference may be made to Figure 6 The present invention provides a flexible circuit substrate for carrying a chip, wherein the first tin layer 131 has a first longitudinal interface 131a contacting the conductive copper layer 110, the first solder mask layer 121 has a first edge 121a contacting the second tin layer 132, and the lateral distance X between the first longitudinal interface 131a and the first edge 121a is greater than the thickness of the first tin layer 131.
[0058] In another embodiment, reference may be made to Figure 6 The present invention provides a flexible circuit substrate for carrying a chip, wherein the second tin layer 132 has a second longitudinal interface 132a contacting the first tin layer 131, and the first solder mask 121 covers the second longitudinal interface 132a.
[0059] In another embodiment, reference may be made to Figure 6 The present invention provides a flexible circuit substrate for carrying a chip, wherein the second tin layer 132 has a second longitudinal interface 132a contacting the first tin layer 131, the second solder mask 122' has a second edge 122a contacting the second tin layer 132, and the lateral distance Y between the second longitudinal interface 132a and the second edge 122a is greater than the thickness of the second tin layer 132.
[0060] In another embodiment, reference may be made to Figure 6 The present invention provides a flexible circuit substrate for carrying a chip, wherein the interface Iss between the first tin layer 131 and the second tin layer 132 is conformal to the interface Isc between the first tin layer 131 and the conductive copper layer 110 .
[0061] Figure 7When the first tin layer 131 and the second tin layer 132 are considered as a tin layer 161, and the first solder mask layer 121 and the second solder mask layer 122' are considered as a solder mask layer 162, the structural characteristics of the flexible circuit substrate for carrying a chip of the present invention include a conductive copper layer 110 having a wiring pattern P disposed on an insulating substrate 100; a tin layer 161 is located above the conductive copper layer 110, wherein the conductive copper layer 110 has an exposed portion 163 not covered by the tin layer 161; and a solder mask layer 162 covers the exposed portion and partially covers the tin layer 161, wherein the tin layer 161 has a longitudinal interface 161a contacting the conductive copper layer 110, and the solder mask layer 162 has an edge 162a contacting the tin layer 161, wherein the lateral distance Z between the longitudinal interface 161a and the edge 162a is greater than the thickness of the solder mask layer 162 plus the thickness of the tin layer 161. In a preferred embodiment, the thickness of the solder mask layer 162 ranges from 6um to 35um. In a preferred embodiment, the thickness of the tin layer 161 ranges from 0.1 um to 0.6 um.
[0062] The present invention also has an embodiment in which only step (c) is performed without step (d). In this embodiment, the thickness of the tin layer ranges from 0.1 um to 0.6 um.
[0063] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the patent application of the present invention; any other equivalent changes or modifications that do not deviate from the spirit disclosed in the present invention should be included in the scope of the patent application below.
[0064] [Explanation of symbols]
[0065] 10 Semi-finished products of flexible circuit substrate
[0066] 100 Insulation substrate
[0067] 101 Transmission hole
[0068] 110 Conductive copper layer
[0069] P Wiring pattern
[0070] 1B Reference Figure
[0071] Lo outer pin area
[0072] Ps Non-pin area
[0073] Ln inner pin area
[0074] Lt test pin area
[0075] 121 First solder mask
[0076] 121a First Edge
[0077] 131 First Tin Layer
[0078] 131a First side
[0079] Iss interface
[0080] Isc interface
[0081] 132 Second Tin Layer
[0082] 122 Second solder mask
[0083] 122' Second solder mask
[0084] 122a The Second Edge
[0085] 132a Second side
[0086] X horizontal distance
[0087] Y horizontal distance
[0088] 161 Tin layer
[0089] 161a Vertical interface
[0090] 162 Solder mask
[0091] 162a Edge
[0092] 163 Exposed Part
[0093] Z lateral distance.
Claims
1. A method for manufacturing a flexible circuit substrate having a roughened solder mask layer, comprising the following steps in sequence: (a) providing a conductive copper layer having a wiring pattern on an insulating substrate; (b) forming a first solder resist layer to partially cover the wiring pattern; (c) forming a first tin layer on the conductive copper layer using the first solder mask as a shield; (d) forming a second tin layer on the first tin layer using the first solder mask as a shield; (e) forming a second solder resist layer partially covering the second tin layer and at least partially covering the first solder resist layer; and (f) Roughening the second solder resist layer so that the second solder resist layer has a roughened surface.
2. The manufacturing method according to claim 1, wherein there is no step of forming a solder mask between step (c) and step (d). 3 . The manufacturing method according to claim 1 , wherein through the step (d), the first solder mask at least partially covers the second tin layer. 4 . The manufacturing method according to claim 1 , wherein through the step (d), the interface between the first tin layer and the second tin layer is conformal to the interface between the first tin layer and the conductive copper layer.
5. The manufacturing method according to claim 1, wherein the wiring pattern has a test area, an inner pin area and an outer pin area, and in the step (b) the first solder mask does not cover the wiring pattern between the test area and the inner pin area. 6 . The manufacturing method according to claim 1 , wherein the step (c) or the step (b) further comprises a heat treatment step.
7. The manufacturing method according to claim 1, wherein in the step (e), the second solder mask layer does not completely cover the first solder mask layer. The manufacturing method according to claim 1 , wherein the roughened surface is formed by physical grinding. 9 . The manufacturing method according to claim 1 , wherein the surface roughness Rz of the roughened surface ranges from 0.04 to 5.0 μm. 10 . The manufacturing method according to claim 9 , wherein the surface roughness Rz of the roughened surface ranges from 0.16 to 4.5 μm. 11 . The manufacturing method according to claim 9 , wherein the surface roughness Rz of the roughened surface ranges from 0.6 to 4.0 μm.
12. A flexible circuit substrate having a roughened solder mask layer, comprising: A conductive copper layer with a wiring pattern is on an insulating substrate; a first tin layer located above the conductive copper layer; a second tin layer located above the first tin layer; A first solder resist layer covers the conductive copper layer not covered by the first tin layer and the second tin layer, and the first solder resist layer partially covers the second tin layer; and A second solder resist layer partially covers the second tin layer and at least partially covers the first solder resist layer, wherein the second solder resist layer has a roughened surface, and the surface roughness Rz of the roughened surface ranges from 0.04 to 5 μm. 13 . The flexible circuit substrate according to claim 12 , wherein the surface roughness Rz of the roughened surface ranges from 0.16 to 4.5 μm. 14 . The flexible circuit substrate according to claim 12 , wherein the surface roughness Rz of the roughened surface ranges from 0.6 to 4.0 μm. 15 . The flexible circuit substrate according to claim 12 , wherein the first solder mask layer has a first edge contacting the second tin layer.
16. The flexible circuit substrate according to any one of claims 12 to 14, wherein the first tin layer has a first longitudinal interface contacting the conductive copper layer, the first solder mask layer has a first edge contacting the second tin layer, and the lateral distance between the first longitudinal interface and the first edge is greater than the thickness of the first tin layer. 17 . The flexible circuit substrate according to claim 12 , wherein the second tin layer has a second longitudinal interface contacting the first tin layer, and the first solder mask layer covers the second longitudinal interface.
18. The flexible circuit substrate according to any one of claims 12 to 14, wherein the second tin layer has a second longitudinal interface contacting the first tin layer, the second solder mask has a second edge contacting the second tin layer, and the lateral distance between the second longitudinal interface and the two edges is greater than the thickness of the second tin layer. 19 . The flexible circuit substrate according to claim 12 , wherein an interface between the first tin layer and the second tin layer conforms to an interface between the first tin layer and the conductive copper layer.
20. The flexible circuit substrate according to any one of claims 12 to 14, wherein the wiring pattern has a test pin area, an inner pin area and an outer pin area, and the first solder mask does not cover the wiring pattern between the test pin area and the inner pin area.
21. A flexible circuit substrate having a roughened solder mask layer, comprising: A conductive copper layer having a wiring pattern is disposed on an insulating substrate; a tin layer is located above the conductive copper layer, wherein the conductive copper layer has an exposed portion not covered by the tin layer; and a solder mask layer, covering the exposed portion and partially covering the tin layer, wherein the solder mask layer has a roughened surface, and the surface roughness Rz of the roughened surface ranges from 0.04 to 5.0 μm, in, The tin layer has a longitudinal interface contacting the conductive copper layer, and the solder mask layer has an edge contacting the tin layer, wherein the lateral distance between the longitudinal interface and the edge is greater than the thickness of the solder mask layer plus the thickness of the tin layer.
22. The flexible circuit substrate according to claim 21, wherein the surface roughness Rz of the roughened surface ranges from 0.16 to 4.5 μm.
23. The flexible circuit substrate according to claim 21, wherein the surface roughness Rz of the roughened surface ranges from 0.6 to 4.0 μm. 24 . The flexible circuit substrate according to claim 21 , wherein the thickness of the solder resist layer ranges from 6 μm to 35 μm.
25. The flexible circuit substrate according to any one of claims 21 to 23, wherein the thickness of the tin layer ranges from 0.1 μm to 0.6 μm.
Citation Information
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