Processing method and resin pasting machine

Abstract

Provided are a processing method and a resin bonding machine, which can reduce the thickness deviation of the resin coated on a wafer. The processing method comprises the following steps: a thickness measuring step of measuring the thickness of the wafer; a wafer holding step of holding the wafer by a holding portion; a resin supplying step of supplying liquid resin to a workbench opposed to the holding portion; a resin coating step of bringing the holding portion and the workbench relatively close to coat the wafer with the liquid resin; and a curing step of curing the liquid resin coated on the wafer. In the resin coating step, the distance to bring the holding portion and the workbench close to each other is determined according to the thickness measured in the thickness measuring step.

Description

Technical Field

[0001] The present invention relates to a processing method for coating one surface of a chip with a resin and a resin pasting machine. Background Art

[0002] A technique is known in which a holding portion holding a wafer is brought close to a stage supplying a liquid resin to coat one surface of a wafer with a resin (see Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2016-167546

[0004] When the bump surface of a wafer with bumps is coated with resin to absorb the unevenness and the opposite surface is cut or ground, if the thickness of the resin is not constant, there is a problem that the cutting depth or the thickness after grinding varies. In addition, since the degree to which the holding part and the worktable are brought close to each other to coat the wafer with resin is determined by a fixed value, there is a problem that the resin cannot be coated with uniform thickness when the thickness of the wafer varies. Summary of the invention

[0005] The present invention has been made in view of the above problem, and an object of the present invention is to provide a processing method and a resin bonding machine capable of reducing thickness variation of a resin coated on a wafer.

[0006] One embodiment of the processing method of the present invention is a processing method for coating a surface of a chip with a resin, wherein the processing method has the following steps: a thickness measuring step of measuring the thickness of the chip; a chip holding step of holding the chip with a holding portion; a resin providing step of providing liquid resin to a workbench opposite to the holding portion; a resin coating step of bringing the holding portion and the workbench into relative proximity to coat the chip with the liquid resin; and a hardening step of hardening the liquid resin coated on the chip, wherein in the resin coating step, the distance by which the holding portion and the workbench are brought into proximity is determined based on the thickness of the chip measured in the thickness measuring step.

[0007] Furthermore, another embodiment of the resin bonding machine of the present invention is a resin bonding machine that coats one surface of a chip with resin, wherein the resin bonding machine comprises: a thickness measuring unit that measures the thickness of the chip; a holding unit that holds the chip; a workbench that is opposite to the holding unit; a resin supplying unit that supplies liquid resin to the workbench; a moving unit that brings the holding unit and the workbench relatively close to coat the chip with the liquid resin; a hardening unit that hardens the liquid resin coated on the chip; and a control unit that controls each mechanism, and the control unit determines the distance at which the moving unit brings the holding unit and the workbench close to each other based on the thickness of the chip measured by the thickness measuring unit.

[0008] Alternatively, the resin pasting machine further includes a temporary placement workbench having a holding surface, the holding surface holding the wafer and having a diameter smaller than the diameter of the wafer, and the thickness measuring unit includes: a first measuring unit, which contacts the front side of the wafer protruding from the temporary placement workbench and measures the height of the front side; a second measuring unit, which contacts the back side of the wafer protruding from the temporary placement workbench and measures the height of the back side; and a calculation unit, which calculates the thickness of the wafer based on the difference between the height of the front side and the height of the back side.

[0009] According to one aspect and another aspect of the present invention, it is possible to reduce the variation in thickness of the resin coating the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a perspective view showing a configuration example of the resin sticking machine according to the first embodiment.

[0011] Figure 2 It is shown Figure 1 A cross-sectional view of a main portion of a thickness measuring section.

[0012] Figure 3 It is shown Figure 1 A top view of the main parts of the thickness measuring unit.

[0013] Figure 4 It is a flowchart which shows the processing method of 1st Embodiment.

[0014] Figure 5 It is shown Figure 4 A cross-sectional view of a main portion of a sheet loading step.

[0015] Figure 6 It is shown Figure 4 A cross-sectional view of a main portion of a wafer holding step.

[0016] Figure 7 It is shown Figure 4 A cross-sectional view of the main parts of the resin providing step.

[0017] Figure 8 It is shown Figure 4 A cross-sectional view of the main parts of stage 1 of the resin coating step.

[0018] Fig. 9 (A) and Fig. 9 (B) shows Figure 4 A cross-sectional view of the main parts of stage 2 of the resin coating step.

[0019] Fig.10 It is shown Figure 4 A cross-sectional view of the main parts of the hardening step.

[0020] Fig.11 It is shown Figure 4 A cross-sectional view of the main part of the remaining part removal step.

[0021] Fig.12 (A) and Fig.12 (B) is a cross-sectional view showing a main part of the tape sticking step of the second embodiment.

[0022] Fig.13 It is a cross-sectional view showing a main part of the resin coating step of the second embodiment.

[0023] Description of symbols

[0024] 1: resin pasting machine; 10: thickness measuring section; 11: temporary placement workbench; 12: first measuring section; 13: second measuring section; 14: calculation section; 20: holding section; 27: distance; 30: workbench; 40: resin supply section; 50: moving section; 60: curing section; 70: control section; 90: sheet supply section; 92: sheet; 97: thickness; 110: remaining portion removing section; 120: tape pasting section; 200: wafer; 201: front side; 202: device area; 203: peripheral remaining area; 204: bump; 205: back side; 210: thickness; 220: tape; 221: tape substrate; 222: adhesive layer; 225: annular frame; 301: liquid resin; 302: resin; 311, 312: resin thickness. DETAILED DESCRIPTION

[0025] The mode (embodiment) for implementing the present invention is described in detail with reference to the accompanying drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the constituent elements described below include substantially the same constituent elements that can be easily thought of by a person skilled in the art. In addition, the structures described below can be appropriately combined. Furthermore, various omissions, substitutions or changes in the structure can be made without departing from the gist of the present invention.

[0026] [First embodiment]

[0027] A resin sticking machine 1 and a processing method according to a first embodiment of the present invention will be described with reference to the drawings. Figure 1 It is a perspective view showing a configuration example of the resin sticking machine 1 according to the first embodiment. Figure 2 It is shown Figure 1 1 is a cross-sectional view of a main part of the thickness measuring unit 10. Figure 3 It is shown Figure 1 1 is a plan view of a main part of the thickness measuring unit 10. The resin bonding machine 1 is a device for implementing a processing method of coating a front surface 201, which is one surface of a wafer 200, with a resin 302.

[0028] In the first embodiment, the wafer 200 to be coated with the resin 302 of the resin bonding machine 1 is, for example, a disk-shaped semiconductor wafer or an optical device wafer made of silicon, sapphire, gallium arsenide, etc., and is also referred to as a workpiece because it is the object of processing of the processing method of the first embodiment performed by the resin bonding machine 1. Figure 2 As shown, the wafer 200 has a device region 202 on which devices are formed and a peripheral remaining region 203 surrounding the device region 202 on a front side 201 .

[0029] like Figure 2 As shown, the wafer 200 has a plurality of bumps 204 having an electrode function on the front side of the device. The bumps 204 protrude from the front side of the device. The device has unevenness due to the bumps 204 on the front side. The back side 205 of the wafer 200 opposite to the front side 201 is formed flat.

[0030] In the first embodiment, since the chip 200 has bumps 204 on the front side of the device and has uneven surfaces, the effect of the resin bonding machine 1 and the processing method of the first embodiment of the present invention is more significant, but the present invention is not limited to this. For example, it can be a packaging substrate with uneven surfaces formed by a so-called molded resin to form a sealant for sealing the unillustrated leads formed on the device by wire bonding and the device, or it can be a method without uneven surfaces, or it can be a sliced ​​chip before the device is formed.

[0031] like Figure 1 As shown, the resin bonding machine 1 comprises: a thickness measuring section 10, which measures the thickness 210 of the chip 200; a holding section 20, which holds the chip 200; a workbench 30, which is opposite to the holding section 20; a resin supplying section 40, which supplies liquid resin 301 to the workbench 30; a moving section 50, which brings the holding section 20 and the workbench 30 relatively close to each other so that the liquid resin 301 is coated on the chip 200; a hardening section 60, which hardens the liquid resin 301 coated on the chip 200; and a control section 70, which controls each mechanism.

[0032] like Figure 1 , Figure 2 as well as Figure 3 As shown, the resin bonding machine 1 further includes a temporary placement table 11, which is provided at a predetermined position relative to the thickness measuring unit 10 and has a holding surface 11-1 for holding the wafer 200, and the holding surface 11-1 has a diameter smaller than that of the wafer. Figure 2As shown, the temporary placement workbench 11 has: an adsorption part 11-2, which forms a flat holding surface 11-1 on the upper surface; and a frame 11-3, which embeds the adsorption part 11-2 into a recessed part in the center of the upper surface to fix the adsorption part 11-2. The adsorption part 11-2 has a disk shape made of porous ceramics with a plurality of pores, etc., and is connected to a vacuum suction source (not shown) via a vacuum suction path (not shown), so that the wafer 200 is sucked and held by the holding surface 11-1 as a whole.

[0033] like Figure 1 and Figure 2 As shown, the thickness measuring part 10 includes: a first measuring part 12, which contacts the front side 201 of the chip 200 protruding radially outward from the temporary placement workbench 11 and measures the height of the front side 201; a second measuring part 13, which contacts the back side 205 of the chip 200 protruding radially outward from the temporary placement workbench 11 and measures the height of the back side 205; and a calculating part 14, which calculates the thickness 210 of the chip 200 based on the difference between the height of the front side 201 and the height of the back side 205.

[0034] The first measuring unit 12 and the second measuring unit 13 each include a contact unit that contacts the wafer 200, a driving unit that moves the contact unit in the vertical direction, i.e., the Z-axis direction, which is the thickness direction of the wafer 200, and a position measuring unit that measures the position of the contact unit in the vertical direction, and the driving unit and the position measuring unit are both electrically connected to the calculation unit 14 in a manner capable of information communication. The first measuring unit 12 and the second measuring unit 13 each send information on the height measurement result to the calculation unit 14.

[0035] like Figure 2 and Figure 3 As shown in FIG. 1 , the first measuring unit 12 and the second measuring unit 13 are disposed at predetermined positions relative to the temporary placement table 11 so as to face each other in the vertical direction. Figure 2 As shown in FIG. 1 , at the predetermined position, the first measuring unit 12 is arranged so that the contact portion is located vertically above the holding surface 11-1 of the temporary placement table 11 and faces downward. Figure 2 As shown, at the predetermined position, the second measuring unit 13 is provided with the contact portion directed upward at a position vertically below the holding surface 11 - 1 of the temporary placement table 11 .

[0036] like Figure 2 As shown, the first measuring part 12 and the second measuring part 13 are preferably arranged at a position opposite to the peripheral remaining area 203 of the chip 200 in the vertical direction. In this case, the contact part does not contact the device area 202 and the bump 204, and the thickness 210 of the chip 200 at the position where the bump 204 is not mounted can be measured.

[0037] The calculation unit 14 is a computer having: an operation processing device having a microprocessor such as a CPU (Central Processing Unit); a storage device having a memory such as a ROM (Read Only Memory) or a RAM (Random Access Memory); and an input / output interface device. The operation processing device of the calculation unit 14 performs operation processing according to a computer program stored in the storage device, and performs processing to calculate the thickness 210 of the wafer 200 based on the difference between the height of the front surface 201 and the height of the back surface 205, thereby outputting the calculation result of the thickness 210 to the control unit 70 electrically connected to the calculation unit 14 in a manner capable of information communication.

[0038] like Figure 2 and Figure 3 As shown, the resin bonding machine 1 preferably further includes support tables 16-1 and 16-2, which surround the radial direction of the temporary placement workbench 11 and are arranged at equal intervals in the circumferential direction. The support table 16-1 is set at a predetermined position where the first measuring part 12 and the second measuring part 13 are provided, and a through hole 16-3 is formed along the vertical direction for inserting each contact part of the first measuring part 12 and the second measuring part 13. The support tables 16-1 and 16-2 are formed so that the height of the upper surface is the same as that of the holding surface 11-1 of the temporary placement workbench 11, and the outer edge of the wafer 200 is supported from the back side 205 by these upper surfaces. When the resin bonding machine 1 further includes the support tables 16-1 and 16-2, the wafer 200 can be supported so that the wafer 200 does not bend, so that the thickness measuring part 10 can measure the thickness 210 of the wafer 200 more accurately.

[0039] In the first embodiment, the thickness measuring unit 10 uses the contact-type first measuring unit 12 and the second measuring unit 13, but the present invention is not limited to this, and a non-contact measuring device such as an optical sensor using a medium such as a laser or a back pressure sensor using a medium such as a fluid may be used. In addition, in the first embodiment, the thickness measuring unit 10 measures the thickness 210 at one location of the peripheral remaining area 203 of the wafer 200, but the present invention is not limited to this, and the thickness may be measured at two or more locations.

[0040] like Figure 1As shown, the thickness measuring unit 10 further includes an illumination unit 18 and an imaging unit 19. The illumination unit 18 is formed to extend in the horizontal direction, which is the radial direction of the wafer 200, at a position below the temporary placement table 11 in the thickness direction of the wafer 200, and irradiates light toward the wafer 200 placed on the temporary placement table 11 from above. The imaging unit 19 is provided downward at a position above the center of the holding surface 11-1 of the temporary placement table 11 in the thickness direction of the wafer 200, and photographs the wafer 200 placed on the temporary placement table 11 from below, and detects the irradiation light irradiated from the illumination unit 18. The imaging unit 19 photographs the wafer 200 to detect the center of the wafer 200, and detects the irradiation light irradiated from the illumination unit 18 to detect the radial shape of the wafer 200.

[0041] The thickness measuring unit 10 can measure the radial size of the wafer 200, that is, the wafer diameter, based on the detection result of the radial shape of the wafer 200 captured by the imaging unit 19. In addition, the thickness measuring unit 10 can perform center alignment and direction alignment of the wafer 200 based on the detection result of the center of the wafer 200 captured by the imaging unit 19 and the detection result of the radial shape.

[0042] The holding part 20 holds the wafer 200 by suction from the upper side at the end on the lower side. The holding part 20 is supported by the moving part 50 so as to be movable in the vertical direction. The holding part 20 further includes a pressing force measuring part 22 at a position above the holding position of the wafer 200 in the vertical direction. The pressing force measuring part 22 can measure the pressing force applied downward via the holding part 20, thereby being able to measure the pressing force when the holding part 20 spreads the liquid resin 301.

[0043] The workbench 30 has a holding surface 31 slightly larger than the diameter of the wafer. The workbench 30 holds a sheet 92 supplied from a sheet supply unit 90 described later by the holding surface 31. A liquid resin 301 is supplied from a resin supply unit 40 to the sheet 92 held by the holding surface 31. The workbench 30 is provided with a hardening unit 60 at the lower part in the vertical direction, and the workbench 30 and the hardening unit 60 are formed integrally. The hardening unit 60 at the lower part hardens the liquid resin 301 supplied to the sheet 92 via the sheet 92 held by the holding surface 31.

[0044] The resin supply unit 40 includes a resin supply source 41 as a supply source of the liquid resin 301, and a nozzle 42 for introducing the liquid resin 301 from the resin supply source 41 toward the holding surface 31 of the table 30. In the first embodiment, the liquid resin 301 supplied by the resin supply unit 40 preferably has a viscosity of 0.5 Pa·s or more and 400 Pa·s or less.

[0045] The liquid resin 301 provided by the resin supply unit 40 uses an ultraviolet curing resin in the first embodiment, but the present invention is not limited to this, and a thermosetting resin may also be used. When the ultraviolet curing resin is used, the liquid resin 301 provided by the resin supply unit 40 is composed of a curing resin component such as an ultraviolet curing resin and an adhesive polymer component such as an acrylic polymer. In addition, when the thermosetting resin is used, the liquid resin 301 provided by the resin supply unit 40 is composed of a thermosetting resin component such as an epoxy resin or a phenolic resin and an adhesive polymer component such as an acrylic polymer. In addition, the liquid resin 301 provided by the resin supply unit 40 may also be a material formed by mixing an ultraviolet curing resin and a thermosetting resin.

[0046] In the first embodiment, since ultraviolet curing resin is used as the liquid resin 301, the ultraviolet rays 62 (see Fig.10 ) of the plurality of ultraviolet irradiation sections 61 (see Figure 5 The first embodiment is a method in which the hardening section 60 is arranged in a horizontal direction. The ultraviolet irradiation section 61 is, for example, an ultraviolet LED. Therefore, the workbench 30 and the sheet 92 described later are composed of a material that transmits at least a portion of the ultraviolet rays 62 in the first embodiment. The workbench 30 is, for example, a glass workbench that is transparent to ultraviolet rays. In addition, the present invention is not limited to this, and for example, the following method may be used: a thermosetting resin is used as the liquid resin 301, a heater is used as the hardening section 60, and the workbench 30 and the sheet 92 are composed of a material with sufficient thermal conductivity.

[0047] The control unit 70 controls each part and each mechanism to make the resin pasting machine 1 of the first embodiment perform each action. The control unit 70 is a computer, which has: an operation processing device, which has a microprocessor such as a CPU (Central Processing Unit); a storage device, which has a memory such as a ROM (Read Only Memory) or a RAM (Random Access Memory); and an input-output interface device. The operation processing device of the control unit 70 performs operation processing according to the computer program stored in the storage device, and outputs the control signal for controlling the resin pasting machine 1 to the various parts and mechanisms of the resin pasting machine 1 via the input-output interface device. In the first embodiment, the control unit 70 is provided separately from the calculation unit 14, but in the present invention, it is not limited to this, and it can also be provided integrally by an integrated computer.

[0048] like Figure 1As shown, the resin bonding machine 1 further includes boxes 81, 82, a loading and unloading unit 83, and a conveying unit 86. The boxes 81, 82 are both containers for wafers 200 having a plurality of slots. The box 81 stores the wafers 200 before being processed by the resin bonding machine 1, and the box 82 stores the wafers 200 after being processed by the resin bonding machine 1.

[0049] The loading and unloading section 83 unloads the wafer 200 before processing from the cassette 81 to the temporary placement stage 11 , and loads the wafer 200 after processing from the excess portion removal section 110 described later into the cassette 82 .

[0050] The conveying unit 86 conveys the chip 200 whose thickness 210 and chip diameter have been measured by the thickness measuring unit 10 and whose center and direction have been aligned, from the temporary placement workbench 11 to the holding unit 20, and conveys the chip 200 coated with resin 302 on the front side 201 from the holding unit 20 to the remaining portion removal unit 110.

[0051] like Figure 1 As shown, the resin bonding machine 1 further includes a sheet supply unit 90. The sheet supply unit 90 pulls out a sheet 92 from a sheet roll 91 in which a sheet 92 having both sides flat is wound into a roll shape, cuts the sheet 92 into pieces according to a predetermined length, and passes through an adsorption unit 94 (see FIG. 1 ) provided below a sheet conveying unit 93 in a vertical direction. Figure 5 ) adsorbs and holds the cut sheet 92, and conveys the sheet 92 adsorbed and held by the adsorption portion 94 to the holding surface 31 of the workbench 30 through the sheet conveying portion 93 driven by the driving portion 95. The sheet 92 is formed to be slightly larger than the holding surface 31 of the workbench 30 in the first embodiment. In the first embodiment, the material of the sheet 92 is a material that transmits at least a portion of the ultraviolet rays 62, such as polyolefin (Poly Olefin, PO) or polyethylene terephthalate (Poly Ethylene Terephthalate, PET).

[0052] like Figure 1 As shown, the resin bonding machine 1 further includes a surplus portion removing unit 110. The surplus portion removing unit 110 includes: a holding table 111 for holding the wafer 200 coated with the resin 302 on the front surface 201; and a cutter 112 for cutting and removing the surplus portion of the resin 302 coating the front surface 201 of the wafer 200 held by the holding table 111, which protrudes radially from the outer edge of the wafer 200.

[0053] Hereinafter, the operation of the resin sticking machine 1 according to the first embodiment will be described. Figure 4 1 is a flowchart showing the processing method of the first embodiment. The processing method of the first embodiment is an example of the function of the resin bonding machine 1 of the first embodiment. Figure 4As shown, there are a thickness measuring step ST11, a chip loading step ST12, a chip holding step ST13, a resin supplying step ST14, a resin coating step ST15, a curing step ST16 and a surplus portion removing step ST17.

[0054] The thickness measuring step ST11 is a step in which the thickness measuring unit 10 measures the thickness 210 of the wafer 200 . Specifically, in the thickness measuring step ST11 , first, the loading / unloading unit 83 unloads the wafer 200 to be measured by the thickness measuring unit 10 , to the temporary placement stage 11 .

[0055] In the thickness measuring step ST11, next, as Figure 2 As shown, the first measuring section 12 of the thickness measuring section 10 contacts the front surface 201 of the wafer 200 and measures the height of the front surface 201, and transmits the information of the measurement result to the calculating section 14, and the second measuring section 13 of the thickness measuring section 10 contacts the back surface 205 of the wafer 200 and measures the height of the back surface 205, and transmits the information of the measurement result to the calculating section 14. In the thickness measuring step ST11, the calculating section 14 of the thickness measuring section 10 further performs a process of subtracting the measurement result of the height of the second measuring section 13 from the measurement result of the height of the first measuring section 12, thereby calculating the thickness 210 of the wafer 200, thereby obtaining the measurement result of the thickness 210 of the wafer 200. In the thickness measuring step ST11, the calculating section 14 of the thickness measuring section 10 outputs the measurement result of the thickness 210 of the wafer 200 and transmits it to the control section 70.

[0056] Figure 5 It is shown Figure 4 This is a cross-sectional view of the main part of the sheet loading step ST12. Figure 5 As shown, the sheet loading step ST12 is a step in which the sheet supply unit 90 supplies the sheet 92 to the holding surface 31 of the workbench 30. The sheet loading step ST12 is a process that can be omitted, but it is preferably performed because it can suppress contamination caused by the liquid resin 301 supplied to the holding surface 31 of the workbench 30 by the sheet 92.

[0057] Figure 6 It is shown Figure 4 sectional view of the main part of the wafer holding step ST13. Figure 6 As shown, the wafer holding step ST13 is a step of holding the wafer 200 using the holding portion 20 .

[0058] like Figure 6As shown, similarly to the temporary placement workbench 11, the holding part 20 includes: an adsorption part 20-2, which forms a flat holding surface 20-1 on the lower surface; and a frame 20-3, which embeds the adsorption part 20-2 into a recessed part in the center of the lower surface to fix the adsorption part 20-2. The adsorption part 20-2 is made of the same material as the adsorption part 11-2, and is connected to a vacuum suction source (not shown) via a vacuum suction path (not shown) like the adsorption part 11-2, so that the wafer 200 is sucked and held by the entire holding surface 20-1.

[0059] In the wafer holding step ST13, first, the moving part 50 makes the holding surface 20-1 of the holding part 20 sufficiently away from the holding surface 31 of the table 30. In the wafer holding step ST13, the conveying part 86 conveys the wafer 200 to the lower side of the holding surface 20-1 of the holding part 20 with the back surface 205 facing upward in the vertical direction. In the wafer holding step ST13, the holding part 20 uses the holding surface 20-1 to suck the back surface 205 side of the wafer 200 conveyed to the lower side of the holding surface 20-1, which faces upward. Thus, in the wafer holding step ST13, the holding part 20 uses the holding surface 20-1 to suck and hold the wafer 200 with the holding surface 20-1 with the front side 201 on which the bumps 204 are mounted facing the holding surface 31 of the table 30 below.

[0060] Figure 7 It is shown Figure 4 The resin provides a cross-sectional view of the main part of step ST14. Figure 7 As shown, the resin supply step ST14 is a step in which the resin supply unit 40 supplies the liquid resin 301 to the stage 30 facing the holding unit 20 .

[0061] Specifically, in the resin providing step ST14, the control unit 70 first determines the desired resin thickness 311 (see FIG. 3 ) of the liquid resin 301 coated on the front surface 201 of the wafer 200 based on the wafer diameter obtained by the thickness measuring unit 10. Figure 8 ), calculates the appropriate amount of liquid resin 301 to be supplied. In addition, the desired resin thickness 311 of the liquid resin 301 is based on the desired resin thickness 312 of the resin 302 coated on the front surface 201 of the wafer 200 (refer to Fig.10 ) and the shrinkage rate when the liquid resin 301 hardens and becomes the resin 302.

[0062] In the resin supplying step ST14, the resin supplying unit 40 then moves the tip of the nozzle 42 from the retreated position on the holding surface 31 of the table 30 to the supplying position facing the holding surface 31 of the table 30. In the resin supplying step ST14, the resin supplying unit 40 then supplies the liquid resin 301 in an appropriate supply amount calculated by the control unit 70 from the nozzle 42 toward the holding surface 31 of the table 30 on which the sheet 92 is placed in the sheet placing step ST12.

[0063] In addition, in the processing method of the first embodiment, the order of performing the thickness measuring step ST11, the wafer loading step ST12, the wafer holding step ST13, and the resin supplying step ST14 is not limited to this order. In the processing method of the first embodiment, specifically, as long as the wafer holding step ST13 is performed after the thickness measuring step ST11, and the resin supplying step ST14 is performed after the wafer loading step ST12, a series of processes on the wafer 200 side of the thickness measuring step ST11 and the wafer holding step ST13 and a series of processes on the workbench 30 side of the wafer loading step ST12 and the resin supplying step ST14 may be performed in a certain group first and then in a certain group, or may be performed in parallel. The resin coating step ST15 is performed after all the processes from the thickness measuring step ST11 to the resin supplying step ST14 are performed.

[0064] Figure 8 It is shown Figure 4 A cross-sectional view of the main parts of the first stage of the resin coating step ST15. Fig. 9 (A) and Fig. 9 (B) shows Figure 4 A cross-sectional view of the main parts of the second stage of the resin coating step ST15. Fig. 9 (A) shows the holding part 20 and the workbench 30 before approaching. Fig. 9 (B) shows the approach of the holding part 20 and the workbench 30. Fig. 9 (A) and Fig. 9 As shown in (B) of FIG. 1 , the resin coating step ST15 is a step in which the moving unit 50 brings the holding unit 20 and the worktable 30 relatively close to coat the wafer 200 with the liquid resin 301. Figure 8As shown, the control unit 70 determines the distance 27 by which the holding unit 20 and the table 30 are brought close to each other based on the thickness 210 of the wafer 200 measured in the thickness measuring step ST11 so that the distance between the front surface 201 of the wafer 200 held by the holding unit 20, which is the surface facing the table 30, and the holding surface 31, which is the upper surface of the table 30, is equal to the sum of the desired resin thickness 311 and the thickness 97 of the sheet 92. In the case where the sheet loading step ST12 is omitted (the case where the sheet 92 is not used), the distance 27 by which the holding unit 20 and the table 30 are brought close to each other is determined based on the thickness 210 of the wafer 200 measured by the thickness measuring unit 10 in the thickness measuring step ST11 so that the distance between the front surface 201 of the wafer 200 held by the holding unit 20 and the holding surface 31 of the table 30 is equal to the desired resin thickness 311 of the liquid resin 301. That is, the distance 27 at which the holding part 20 and the workbench 30 are brought close is determined by the thickness 210 of the chip 200 measured by the thickness measuring part 10 in the thickness measuring step ST11, so that the resin thickness 311 of the desired liquid resin 301 corresponds between the front surface 201 of the chip 200 held by the holding part 20 and the holding surface 31 of the workbench 30.

[0065] Thus, in the first embodiment, the resin coating step ST15 has the following steps: a distance determination step as a first stage of processing, determining a distance 27 for bringing the holding portion 20 and the workbench 30 closer together; and a resin deformation step as a second stage of processing, deforming the liquid resin 301 through the holding portion 20 and the workbench 30 and coating the chip 200 according to the distance 27 determined in the distance determination step.

[0066] When the liquid resin 301 is deformed in the resin deformation step, as shown in FIG. Figure 8 As shown by the middle dotted line, when considering that the bump 204 is sunken into the liquid resin 301, between the holding surface 20-1 of the holding portion 20 and the holding surface 31 of the worktable 30, the wafer 200 with a thickness of 210, the liquid resin 301 with a desired resin thickness 311 as a target, and the sheet 92 with a known thickness 97 are stacked in the vertical direction. In view of this, in the distance determination step, specifically, as Figure 8As shown, the control unit 70 performs processing to subtract the thickness 210 of the wafer 200 measured in the thickness measuring step ST11, the resin thickness 311 (liquid resin 301 before curing) which can be calculated based on the resin thickness 312 (resin 302 after curing) which can be input into the control unit 70 by the operator via the input / output interface device, and the thickness 97 of the sheet 92 pre-stored in the storage device of the control unit 70, from the initial interval between the holding surface 20-1 of the holding unit 20 and the holding surface 31 of the table 30, thereby calculating and determining the distance 27 for bringing the holding unit 20 and the table 30 closer. In addition, in the distance determining step, when the sheet loading step ST12 is omitted, it is not necessary to consider subtracting the thickness 97 of the sheet 92.

[0067] In the resin deformation step, as Fig. 9 (A) and Fig. 9 As shown in (B), the moving unit 50 moves the holding unit 20 downward by the distance 27 determined in the distance determination step to bring it close to the workbench 30, thereby using the holding surface 20-1 of the holding unit 20 and the holding surface 31 of the workbench 30 to spread the liquid resin 301 therebetween in the horizontal direction via the wafer 200 and the sheet 92. As a result, in the resin deformation step, the liquid resin 301 covering the front surface 201 of the wafer 200 is molded between the front surface 201 of the wafer 200 and the sheet 92. In the resin deformation step, since the sheet 92 is flat, the surface of the liquid resin 301 in contact with the sheet 92 is formed to be flat.

[0068] Fig.10 It is shown Figure 4 This is a cross-sectional view of the main part of the hardening step ST16. Fig.10 As shown, the curing step ST16 is a step in which the curing unit 60 cures the liquid resin 301 coated on the wafer 200 in the resin coating step ST15 to form the resin 302 .

[0069] In the hardening step ST16, in the first embodiment, as Fig.10 As shown, specifically, the ultraviolet irradiation section 61 of the curing section 60 irradiates the ultraviolet 62 to the liquid resin 301 as the ultraviolet curing type resin via the worktable 30 and the sheet 92, so that the liquid resin 301 undergoes an ultraviolet curing reaction to become a cured resin 302. In the curing step ST16, as the liquid resin 301 is cured to become the resin 302, the liquid resin 301 having a resin thickness 311 shrinks to become the resin 302 having a resin thickness 312 thinner than the resin thickness 311.

[0070] Fig.11 It is shown Figure 4 The remaining part of step ST17 is removed from the cross-sectional view of the main part. Fig.11As shown, the excess portion removing step ST17 is a step in which the excess portion removing unit 110 cuts off and removes the excess portion of the resin 302 covering the front surface 201 of the wafer 200 that protrudes radially beyond the outer edge of the wafer 200 .

[0071] In the remaining part removal step ST17, specifically, first, the conveying unit 86 conveys the chip 200 coated with resin 302 on the front side 201 after the treatment up to the hardening step ST16 from the holding unit 20 to the remaining part removal unit 110, and places it on the holding workbench 111 with the coated resin 302 side facing downward in the vertical direction.

[0072] In the remaining portion removal step ST17, then, as Fig.11 As shown, the remaining portion removing unit 110 cuts into the resin 302 using the cutter 112 in the downward direction in the vertical direction along the outer edge of the wafer 200 held by the holding table 111. In the remaining portion removing step ST17, the remaining portion removing unit 110 then cuts off the remaining portion of the resin 302 by moving the cutter 112 in the circumferential direction along the outer edge of the wafer 200 while cutting into the resin 302. In addition, in the remaining portion removing step ST17, by making the cutter 112 pass over the resin 302 and cut into the sheet 92 in advance, the remaining portion of the sheet 92 can be cut off at one time corresponding to the cutting off of the remaining portion of the resin 302. Furthermore, in the remaining portion removing step ST17, even if there is no remaining portion of the resin 302, it is preferred to perform the remaining portion removing step ST17 in order to cut off the remaining portion of the sheet 92.

[0073] The resin bonding machine 1 of the first embodiment can obtain a chip 200 in which the entire surface of the front side 201 as one surface is coated with resin 302 having a desired resin thickness 312 by going through the various processes from the thickness measuring step ST11 to the excess portion removing step ST17 of the processing method of the first embodiment.

[0074] The resin bonding machine 1 and the processing method of the first embodiment have the above-mentioned structure, and determine the distance 27 for bringing the holding part 20 and the workbench 30 closer together according to the thickness 210 of the chip 200 measured by the thickness measuring part 10 in the thickness measuring step ST11, so that the distance between the surface of the chip 200 held by the holding part 20 that is opposite to the workbench 30, i.e., the front surface 201 and the holding surface 31 that is the upper surface of the workbench 30 is equal to the sum of the resin thickness 311 of the desired liquid resin 301 and the thickness 97 of the sheet 92, and according to the determined distance 27, the holding part 20 and the workbench 30 are brought relatively close to each other and the liquid resin 301 is coated on the chip 200. Therefore, the resin bonding machine 1 and the processing method of the first embodiment change the distance 27 at which the holding portion 20 and the workbench 30 are brought close to each other according to the measurement result of the thickness 210 of the chip 200, thereby having the effect of reducing the thickness deviation of the resin 302 coated on the chip 200 that may be caused by the deviation of the thickness 210 of the chip 200.

[0075] Specifically, when a wafer 200 having a thickness 210 of 755 μm is used as the object of coating with the resin 302, when the relative error is set to 3%, the deviation of the thickness 210 may be about ±25 μm. Furthermore, when the resin thickness 312 of the resin 302 coated on the wafer 200 is set to 100 μm, when the deviation of the resin thickness 312 occurs due to the deviation of the thickness 210 of the wafer 200 as in the past, there is a problem that the relative error reaches 25%. However, the resin bonding machine 1 and the processing method of the first embodiment correct the deviation of the thickness 210 of the wafer 200 for each wafer 200 and coat the liquid resin 301, so it can be known that the deviation of the resin thickness 312 that may be caused by the deviation of the thickness 210 of the wafer 200 can be greatly reduced by relative error conversion.

[0076] In addition, when the sheet placement step ST12 is omitted (when the sheet 92 is not used), the distance 27 for bringing the holding portion 20 and the table 30 closer together is determined based on the thickness 210 of the wafer 200 measured by the thickness measuring portion 10 in the thickness measuring step ST11 so that the distance between the front surface 201 of the wafer 200 held by the holding portion 20 and the holding surface 31 of the table 30 is equal to the desired resin thickness 311 of the liquid resin 301. In other words, the distance 27 for bringing the holding portion 20 and the table 30 closer together is determined based on the thickness 210 of the wafer 200 measured by the thickness measuring portion 10 in the thickness measuring step ST11 so that the distance between the front surface 201 of the wafer 200 held by the holding portion 20 and the holding surface 31 of the table 30 is equal to the desired resin thickness 311 of the liquid resin 301.

[0077] In addition, the resin bonding machine 1 of the first embodiment also has a temporary placement workbench 11, which has a holding surface 11-1 that is smaller than the diameter of the chip 200 and holds the chip 200. The thickness measuring unit 10 includes: a first measuring unit 12, which contacts the front side 201 of the chip 200 protruding from the temporary placement workbench 11 and measures the height of the front side 201; a second measuring unit 13, which contacts the back side 205 of the chip 200 protruding from the temporary placement workbench 11 and measures the height of the back side 205; and a calculating unit 14, which calculates the thickness 210 of the chip 200 based on the difference between the height of the front side 201 and the height of the back side 205. Therefore, the resin bonding machine 1 of the first embodiment can more accurately measure the thickness 210 of the chip 200, so that the thickness 210 can be reflected in the distance 27 that brings the holding part 20 and the workbench 30 closer when coating the liquid resin 301. Therefore, it has the effect of more reliably reducing the thickness deviation of the resin 302 coated on the chip 200 that may be caused by the deviation of the thickness 210 of the chip 200.

[0078] [Second embodiment]

[0079] A resin sticking machine 1 and a processing method according to a second embodiment of the present invention will be described with reference to the drawings. Fig.12 (A) and Fig.12 (B) is a cross-sectional view showing a main part of the tape sticking step of the second embodiment. Fig.12 (A) shows the state before the tape 220 is attached to the wafer 200. Fig.12 (B) shows the wafer 200 after the tape 220 is attached. Fig.13 2 is a cross-sectional view showing a main part of the resin coating step ST15 of the second embodiment. Fig.12 (A) Fig.12 (B) and Fig.13 In the present invention, the same parts as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

[0080] The resin sticking machine 1 of the second embodiment is a component in which a tape sticking section 120 is added to the first embodiment. Fig.12 (A) and Fig.12 As shown in (B), the tape sticking unit 120 includes: a holding table 121 that holds the wafer 200 to which the tape 220 is to be stuck and an annular frame 225 attached to the outer edge of the tape 220; and a tape supply unit (not shown) that supplies the tape 220 and sticks it to the wafer 200 and the annular frame 225. In addition, the tape sticking unit 120 includes the tape supply unit in the second embodiment, but the present invention is not limited to this, and the tape supply unit may be omitted and the tape 220 may be supplied by an operator (operator) and stuck to the wafer 200 and the annular frame 225.

[0081] like Fig.12 (A) and Fig.12 As shown in (B), similarly to the temporary placement workbench 11 and the holding part 20, the holding workbench 121 has: an adsorption part 121-2, which forms a flat holding surface 121-1 on the upper surface; and a frame 121-3, which fixes the adsorption part 121-2 by embedding the adsorption part 121-2 into a recessed part in the center of the upper surface. The adsorption part 121-2 is made of the same material as the adsorption part 11-2 and the adsorption part 20-2, and is connected to a vacuum suction source (not shown) via a vacuum suction path (not shown) similarly to the adsorption part 11-2 and the adsorption part 20-2, so that the wafer 200 and the annular frame 225 are attracted and held by the holding surface 121-1 as a whole.

[0082] The tape 220 used in the tape sticking section 120 includes a tape base 221 larger than the wafer diameter of the wafer 200 and an adhesive layer 222 provided on one surface of the tape base 221. In the tape base 221, the tape 220 does not include the adhesive layer 222 in a central region facing the device region 202 of the wafer 200, but includes the adhesive layer 222 in an outer peripheral region including an outer edge portion facing the outer peripheral remaining region 203 of the wafer 200 and the annular frame 225.

[0083] The processing method of the second embodiment is a process in which a tape sticking step is added before the wafer holding step ST13 in the first embodiment and the resin coating step ST15 is changed accordingly.

[0084] like Fig.12 (A) and Fig.12 As shown in (B) of FIG. 1 , the tape sticking step is a step of sticking the tape 220 on a predetermined surface, that is, the front surface 201 of the coating resin 302 of the wafer 200 and attaching the ring frame 225 to the outer edge of the tape 220 .

[0085] In the tape pasting step, specifically, first, Fig.12 As shown in (A), the holding table 121 of the tape sticking section 120 sucks and holds the wafer 200 from the back side 205 in the central area of ​​the holding surface 121-1, and sucks and holds the annular frame 225 in the peripheral area of ​​the holding surface 121-1. In the tape sticking step, the tape supplying section of the tape sticking section 120 supplies the tape 220 above the wafer 200 and the annular frame 225 so that the central area without the adhesive layer 222 is opposite to the front side 201 of the device area 202 of the wafer 200, and the surface of the peripheral area with the adhesive layer 222 on the adhesive layer 222 side is opposite to the front side 201 of the peripheral remaining area 203 of the wafer 200 and the annular frame 225.

[0086] In the tape pasting step, after that, as Fig.12 As shown in (B), the tape providing portion of the tape bonding portion 120 makes the central area of ​​the tape 220 without the adhesive layer 222 in close contact with the front side 201 of the device area 202 of the chip 200, and makes the peripheral area of ​​the tape 220 with the adhesive layer 222 adhere to the front side 201 of the peripheral remaining area 203 of the chip 200 and the annular frame 225 via the adhesive layer 222.

[0087] In the distance determination step of the resin coating step ST15 of the second embodiment, the control unit 70 calculates and determines the distance 27 for bringing the holding unit 20 and the workbench 30 closer after correcting the thickness of the tape 220 by further subtracting the thickness of the central area of ​​the tape 220 that does not have the adhesive layer 222 and is in close contact with the front side 201 of the device area 202 of the chip 200 in the tape pasting step from the initial interval between the holding surface 20-1 of the holding unit 20 and the holding surface 31 of the workbench 30 in the tape pasting step.

[0088] In the resin deformation step of the resin coating step ST15 of the second embodiment, the process is changed to a process based on the distance 27 by which the holding portion 20 and the table 30 are brought close when the thickness of the tape 220 is corrected in the resin deformation step of the resin coating step ST15 of the first embodiment.

[0089] Since the resin bonding machine 1 and the processing method of the second embodiment have the above-mentioned structure, they can reduce the thickness deviation of the resin 302 coated on the wafer 200 that may be caused by the deviation of the thickness 210 of the wafer 200, just like the resin bonding machine 1 and the processing method of the first embodiment. In addition, the resin bonding machine 1 and the processing method of the second embodiment also have the same effects as the resin bonding machine 1 and the processing method of the first embodiment.

[0090] Since the resin sticking machine 1 and the processing method of the second embodiment further correct the thickness of the tape 220 and implement the resin coating step ST15 , it is possible to suppress the thickness variation of the resin 302 coated on the wafer 200 that may be caused by the thickness of the tape 220 .

[0091] In addition, the present invention is not limited to the above-mentioned embodiment. That is, it can be implemented with various modifications within the scope not departing from the gist of the present invention.

Claims

1. A processing method, coating one surface of a wafer with a resin, wherein: The processing method has the following steps: A thickness measuring step, measuring the thickness of the wafer; a wafer holding step, holding the wafer by using a holding portion; A resin supplying step of supplying liquid resin to a worktable opposed to the holding portion; A resin coating step, wherein the holding portion and the worktable are relatively close to each other so as to coat the wafer with the liquid resin; as well as a hardening step to harden the liquid resin coated on the wafer; In the resin coating step, the distance by which the holding portion and the stage are brought close to each other is determined based on the thickness of the wafer measured in the thickness measuring step.

2. A resin bonding machine, which coats one surface of a wafer with resin, wherein: The resin pasting machine has: a thickness measuring unit for measuring the thickness of the wafer; A holding portion that holds the wafer; a workbench, which is opposite to the holding portion; a resin supplying section for supplying liquid resin to the workbench; A moving part that brings the holding part and the worktable relatively close to each other so as to coat the wafer with the liquid resin; a hardening section that hardens the liquid resin coated on the wafer; and The control department controls each organization. The control unit determines a distance by which the moving unit brings the holding unit and the stage closer together, based on the thickness of the wafer measured by the thickness measuring unit.

3. The resin bonding machine according to claim 2, wherein: The resin bonding machine also has a temporary placement workbench having a holding surface for holding the wafer and having a diameter smaller than the diameter of the wafer. The thickness measuring unit comprises: a first measuring unit that contacts the front surface of the wafer protruding from the temporary placement table and measures the height of the front surface; a second measuring unit that contacts the back surface of the wafer protruding from the temporary placement table and measures the height of the back surface; and A calculation unit calculates the thickness of the wafer based on a difference between the height of the front surface and the height of the back surface.

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