IGBT drive circuit and device

Abstract

The present invention relates to the field of IGBT driving technology, and in particular to an IGBT driving circuit and device, comprising a driving optocoupler and a pulse clamping subcircuit, wherein the driving optocoupler is used to output a control signal, and the driving pulse clamping subcircuit switches the working state of the IGBT device and clamps the voltage of the IGBT device when the working state is switched, thereby suppressing the peak pulse generated by the gate when the IGBT device switches the working state, and effectively avoiding the risk of the IGBT being erroneously turned on.

Description

Technical Field

[0001] The present invention relates to the technical field of IGBT driving, and in particular to an IGBT driving circuit and device. Background Art

[0002] IGBT, or insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor. Due to its low driving power and low saturation voltage drop, it is increasingly widely used in motor drive, inverter and other fields.

[0003] As the frequency of IGBT usage increases, IGBT damage problems occur frequently, and its driving and protection are receiving more and more attention. More and more manufacturers have developed IGBT driving optocouplers to drive and protect IGBTs. However, in actual application and testing of IGBT driving circuits, the IGBT gate turn-on and turn-off pulses will generate many voltage spikes, and even when the IGBT is in the off state, a positive pulse spike close to the IGBT turn-on voltage will be generated, causing the IGBT to have the risk of false turn-on. Summary of the invention

[0004] In view of this, an object of the present invention is to provide an IGBT driving circuit and device to overcome the problem that the current IGBT is prone to the risk of erroneous turn-on.

[0005] To achieve the above objectives, the present invention adopts the following technical solutions:

[0006] An IGBT driving circuit includes a driving optical coupler and a pulse clamping sub-circuit;

[0007] The first end of the driving optical coupler is connected to the input end of the pulse clamping subcircuit, and the output end of the pulse clamping subcircuit is connected to the gate of the IGBT device;

[0008] The driving optical coupler is used to output a control signal to drive the pulse clamping subcircuit to switch the working state of the IGBT device, and clamp the voltage of the IGBT device when switching the working state, thereby suppressing the peak pulse generated when the IGBT device switches the working state.

[0009] Furthermore, in the above-mentioned IGBT driving circuit, the pulse clamping subcircuit includes a signal gating unit and two-way execution units;

[0010] The input end of the signal gating unit serves as the input end of the pulse clamping subcircuit, the first output end of the signal gating unit is connected to the input end of one of the execution units, and the second output end of the signal gating unit is connected to the input end of another execution unit; the signal gating unit is used to select the first output end of the signal gating unit or the second output end of the signal gating unit according to the control signal;

[0011] The output ends of the two execution units serve as the output ends of the pulse clamping subcircuit.

[0012] Furthermore, in the above-mentioned IGBT driving circuit, the signal gating unit includes a first triode and a second triode;

[0013] The first end of the first triode and the first end of the second triode serve as input ends of the signal gating unit, the second end of the first triode is connected to a positive voltage power supply, the second end of the second triode is connected to a negative voltage power supply, the third end of the first triode serves as a first output end of the signal gating unit, and the third end of the second triode serves as a second output end of the signal gating unit;

[0014] When the control signal includes a positive voltage signal, the first transistor is turned on to select the first output end of the signal gating unit; when the control signal includes a negative voltage signal, the second transistor is turned on to select the second output end of the signal gating unit.

[0015] Further, in the above-mentioned IGBT driving circuit, the first transistor includes an NPN transistor, and the second transistor includes a PNP transistor;

[0016] The first ends of the first transistor and the second transistor are both bases, the second ends of the first transistor and the second transistor are both collectors, and the third ends of the first transistor and the second transistor are both emitters.

[0017] Furthermore, in the above-mentioned IGBT driving circuit, each execution unit includes a third triode and a voltage regulator tube;

[0018] The first end of the third triode serves as the input end of each execution unit, the second end of the third triode is connected to the first end of the voltage regulator tube, the third end of the third triode is connected to the ground line, the second end of the voltage regulator tube is connected to the first end of the third triode and serves as the output end of each execution unit;

[0019] If the first output terminal of the signal gating unit is selected, the third transistor in the execution unit connected to the first output terminal of the signal gating unit is turned on, the gate voltage value of the IGBT device is greater than the turn-on threshold, and the IGBT device is turned on; the voltage regulator of the execution unit connected to the first output terminal of the signal gating unit clamps the voltage of the IGBT device when it is turned on, suppressing the spike pulse generated when the IGBT device is turned on;

[0020] If the second output end of the signal gating unit is enabled, the third transistor in the execution unit connected to the second output end of the signal gating unit is turned on, the gate voltage value of the IGBT device is less than the shutdown threshold, and the IGBT device is turned off; the Zener diode of the execution unit connected to the second output end of the signal gating unit clamps the voltage of the IGBT device when it is turned off, thereby suppressing the spike pulse generated when the IGBT device is turned off.

[0021] Further, in the above-mentioned IGBT driving circuit, the third transistor comprises an NPN transistor;

[0022] The first end of the third triode is a base, the second end of the third triode is a collector, and the third end of the third triode is an emitter.

[0023] Furthermore, in the above-mentioned IGBT driving circuit, each of the execution units further comprises a first resistor;

[0024] The first end of the first resistor is connected to the first end of the third transistor, and the second end of the first resistor is connected to the second end of the voltage regulator.

[0025] Furthermore, the above-mentioned IGBT driving circuit further includes a second resistor and a first capacitor;

[0026] The first end of the second resistor and the first end of the first capacitor are respectively connected to the second end of the voltage regulator tube, and the second end of the second resistor and the second end of the first capacitor are connected to the ground line.

[0027] Furthermore, the above-mentioned IGBT driving circuit further includes a desaturation detection subcircuit;

[0028] The first end of the desaturation detection subcircuit is connected to the second end of the driving optocoupler, the second end of the desaturation detection subcircuit is connected to the third end of the driving optocoupler, and the third end of the saturation detection subcircuit is connected to the drain of the IGBT device;

[0029] The third end of the driving optocoupler obtains a pin detection voltage that is positively correlated with the voltage of the IGBT device based on the desaturation detection subcircuit. If the pin detection voltage is greater than a preset threshold, the first end of the driving optocoupler is controlled to output the negative voltage signal.

[0030] Further, in the above-mentioned IGBT driving circuit, the desaturation detection subcircuit includes a third resistor, a second capacitor and a diode;

[0031] A first end of the second capacitor is connected to a ground line and serves as a first end of the desaturation detection subcircuit;

[0032] The second end of the second capacitor and the first end of the third resistor serve as the second end of the saturation detection subcircuit, the second end of the third resistor is connected to the anode end of the diode, and the cathode end of the diode serves as the third end of the desaturation detection subcircuit;

[0033] The source of the IGBT device is connected to a ground line.

[0034] Furthermore, the above-mentioned IGBT driving circuit further includes a third capacitor, a fourth capacitor and a fifth capacitor;

[0035] The first end of the third capacitor and the first end of the fourth capacitor are both connected to the second end of the driving optocoupler, the second end of the third capacitor and the first end of the fifth capacitor are both connected to the fourth end of the driving optocoupler, and the second end of the fourth capacitor and the second end of the fifth capacitor are both connected to the fifth end of the driving optocoupler;

[0036] The fourth end of the driving optical coupler is also connected to the positive voltage power supply, and the fifth end of the driving optical coupler is also connected to the negative voltage power supply.

[0037] Furthermore, the above-mentioned IGBT driving circuit further includes a fourth resistor and a fifth resistor;

[0038] The first output end of the signal gating unit is connected to the input end of one execution unit through the fourth resistor, and the second output end of the signal gating unit is connected to the input end of another execution unit through the fifth resistor.

[0039] Furthermore, the above-mentioned IGBT driving circuit further includes a sixth resistor;

[0040] The first end of the driving optical coupler is connected to the input end of the pulse clamping sub-circuit through the sixth resistor.

[0041] The present invention also provides an IGBT driving device, comprising an IGBT device and any one of the above IGBT driving circuits.

[0042] The IGBT driving circuit and device of the present invention include a driving optocoupler and a pulse clamping subcircuit, wherein the driving optocoupler is used to output a control signal, and the driving pulse clamping subcircuit switches the working state of the IGBT device and clamps the voltage of the IGBT device when the working state is switched, thereby suppressing the peak pulse generated by the gate when the IGBT device switches the working state, and effectively avoiding the risk of the IGBT being mistakenly turned on. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0044] Figure 1 This is a circuit block diagram provided by an embodiment of an IGBT driving circuit of the present invention;

[0045] Figure 2 It is a circuit diagram provided by an embodiment of an IGBT driving circuit of the present invention;

[0046] Figure 3 This is a circuit block diagram provided by an embodiment of an IGBT driving device of the present invention. DETAILED DESCRIPTION

[0047] To make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be described in detail below. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other implementation methods obtained by ordinary technicians in this field without creative work belong to the scope of protection of the present invention.

[0048] Figure 1 FIG. 1 is a circuit block diagram of an embodiment of an IGBT driving circuit of the present invention. Figure 1 As shown, the driving circuit of the IGBT in this embodiment includes a driving optocoupler 10 and a pulse clamping subcircuit 11. The first end of the driving optocoupler 10 is connected to the input end of the pulse clamping subcircuit 11, and the output end of the pulse clamping subcircuit 11 is connected to the gate of the IGBT device 20.

[0049] In this embodiment, the driving optocoupler 10 is used to output a control signal, and the driving pulse clamping sub-circuit 11 switches the working state of the IGBT device 20 according to the control signal output by the driving optocoupler 10, and clamps the voltage of the IGBT device 20 when switching the working state, thereby suppressing the peak pulse generated when the IGBT device 20 switches the working state.

[0050] Furthermore, in the IGBT driving circuit of this embodiment, the pulse clamping subcircuit 11 includes a signal gating unit 111 and two execution units 112. In this embodiment, the two execution units may be a first execution unit 1121 and a second execution unit 1122, respectively.

[0051] The input end of the signal gating unit 111 serves as the input end of the pulse clamping subcircuit 11, the first output end of the signal gating unit 111 is connected to the input end of one execution unit 112, the second output end of the signal gating unit 111 is connected to the input end of another execution unit 112, and the output ends of the two execution units 112 serve as the output ends of the pulse clamping subcircuit 11. In a specific implementation, the first output end of the signal gating unit 111 is connected to the input end of the first execution unit 1121, and the second output end of the signal gating unit 111 is connected to the input end of the second execution unit 1122, as shown in FIG. Figure 1 shown.

[0052] The signal gating unit 111 is used to select the first output end of the signal gating unit 111 or the second output end of the signal gating unit 111 according to the control signal. If the signal gating unit 111 selects the first output end of the signal gating unit 111 according to the control signal, the optocoupler 10, the signal gating unit 111, the execution unit 112 (the first execution unit 1121 of this embodiment) connected to the first output end of the signal gating unit 111, and the IGBT device 20 are driven to form a path capable of transmitting signals; if the signal gating unit 111 selects the second output end of the signal gating unit 111 according to the control signal, the optocoupler 10, the signal gating unit 111, the execution unit 112 (the second execution unit 1122 of this embodiment) connected to the second output end of the signal gating unit 111, and the IGBT device 20 are driven to form a path capable of transmitting signals.

[0053] Figure 2 This is a circuit diagram provided by an embodiment of an IGBT driving circuit of the present invention.

[0054] The structure of the signal gating unit 111 is as follows: Figure 2 Specifically, the signal gating unit 111 in the IGBT driving circuit of this embodiment includes a first transistor Q1 and a second transistor Q2.

[0055] like Figure 2As shown, the first end of the first transistor Q1 and the first end of the second transistor Q2 serve as input ends of the signal selection unit 111, the second end of the first transistor Q1 is connected to the positive voltage power supply VCC1, the second end of the second transistor Q2 is connected to the negative voltage power supply VCC2, the third end of the first transistor Q1 serves as the first output end of the signal selection unit 111, and the third end of the second transistor Q2 serves as the second output end of the signal selection unit 111.

[0056] In this embodiment, when the output control signal includes a positive voltage signal, the first transistor Q1 is turned on and the signal selection unit 111 has a first output terminal; when the output control signal includes a negative voltage signal, the second transistor Q2 is turned on and the signal selection unit 111 has a second output terminal.

[0057] In a specific implementation, the first transistor Q1 includes an NPN transistor, the second transistor Q2 includes a PNP transistor, and, as Figure 2 As shown, the first ends of the first transistor Q1 and the second transistor Q2 are both bases, the second ends of the first transistor Q1 and the second transistor Q2 are both collectors, and the third ends of the first transistor Q1 and the second transistor Q2 are both emitters. When the control signal output by the first end of the driving optical coupler 10 includes a positive voltage signal, the NPN transistor, that is, the first transistor Q1, is turned on, and when the control signal output by the first end of the driving optical coupler 10 includes a negative voltage signal, the PNP transistor, that is, the second transistor Q2, is turned on.

[0058] Furthermore, the structure of the execution unit 112 is as follows: Figure 2 As shown. Each execution unit 112 includes a third triode Q3 and a voltage regulator D1. In a specific implementation, the voltage regulator D1 is a bidirectional transient suppression diode.

[0059] The first end of the third triode Q3 serves as the input end of each execution unit 112, the second end of the third triode Q3 is connected to the first end of the voltage regulator D1, the third end of the third triode Q3 is connected to the ground line, the second end of the voltage regulator D1 is connected to the first end of the third triode Q3, and the second end of the voltage regulator D1 also serves as the output end of each execution unit 112.

[0060] In a specific implementation, the third transistor Q3 includes an NPN transistor, and a first end of the third transistor Q3 is a base, a second end of the third transistor Q3 is a collector, and a third end of the third transistor Q3 is an emitter.

[0061] Specifically, if the output control signal includes a positive voltage signal, the first transistor Q1 is turned on, the emitter of the first transistor Q1 outputs a high potential, and the base voltage of the third transistor Q3 in the first execution unit 1121 is pulled high. Figure 2The voltage value of the middle node A is greater than the turn-on threshold of the third transistor Q3 in the first execution unit 1121, and the third transistor Q3 in the first execution unit 1121 is turned on, and Figure 2 The voltage value of the middle node B is greater than the turn-on threshold of the IGBT device 20, and the IGBT device 20 is turned on. At this time, the voltage regulator D1 in the first execution unit 1121 clamps the voltage of the IGBT device 20 to the normal working level when it is turned on, suppressing the spike pulse generated when the IGBT device 20 is turned on.

[0062] Specifically, if the output control signal includes a negative voltage signal, the second transistor Q2 is turned on. Figure 2 The voltage value of the middle node C is greater than the turn-on threshold of the third transistor Q3 in the second execution unit 1122, and the third transistor Q3 in the second execution unit 1122 is turned on, and Figure 2 The voltage value of the middle node B is less than the turn-off threshold of the IGBT device 20, and the IGBT device 20 is turned off; the Zener diode D1 in the second execution unit 1122 clamps the voltage when the IGBT device 20 is turned off. When a positive IGBT turn-off pulse interference occurs, the Zener diode D1 can suppress these positive peak pulses at a low level, suppress the peak pulses generated when the IGBT device 20 is turned off, and prevent the IGBT device 20 from being mis-turned on.

[0063] Furthermore, in the IGBT driving circuit of this embodiment, each execution unit 112 further includes a first resistor R1, such as Figure 2 As shown, the first end of the first resistor R1 is connected to the first end of the third transistor Q3, and the second end of the first resistor R1 is connected to the second end of the voltage regulator D1.

[0064] Furthermore, the IGBT driving circuit of this embodiment further includes a second resistor R2 and a first capacitor C1. The first end of the second resistor R2 and the first end of the first capacitor C1 are respectively connected to the second end of the voltage regulator tube D1, and the second end of the second resistor R2 and the second end of the first capacitor C1 are both connected to the ground line.

[0065] Furthermore, the IGBT driving circuit of the present embodiment further includes a fourth resistor R4 and a fifth resistor R5, the first output end of the signal gating unit 111 is connected to the input end of one execution unit 112 through the fourth resistor R4, and the second output end of the signal gating unit 111 is connected to the input end of another execution unit 112 through the fifth resistor R5. In the present embodiment, the first output end of the signal gating unit 111 is connected to the input end of the first execution unit 1121 through the fourth resistor R4, and the second output end of the signal gating unit 111 is connected to the input end of the second execution unit 1122 through the fifth resistor R5.

[0066] It should be noted that the first resistor R1 , the second resistor R2 , the fourth resistor R4 and the fifth resistor R5 are all voltage-dividing resistors.

[0067] Furthermore, the IGBT driving circuit of the present embodiment further includes a sixth resistor R6 , and the first end of the driving optocoupler 10 is connected to the input end of the pulse clamping sub-circuit 11 through the sixth resistor R6 .

[0068] Furthermore, the IGBT driving circuit of the present embodiment further includes a desaturation detection subcircuit 12. A first end of the desaturation detection subcircuit 12 is connected to a second end of the driving optocoupler 10, a second end of the desaturation detection subcircuit 12 is connected to a third end of the driving optocoupler 10, and a third end of the desaturation detection subcircuit is connected to a drain of the IGBT device 20.

[0069] In this embodiment, the third end of the driver optocoupler 10 obtains a pin detection voltage that is positively correlated with the voltage of the IGBT device 20 based on the desaturation detection subcircuit 12. If the pin detection voltage is greater than a preset threshold, the first end of the driver optocoupler 10 is controlled to output a negative voltage signal.

[0070] Specifically, Figure 2 As shown, the desaturation detection subcircuit 12 includes a third resistor R3, a second capacitor C2 and a diode D2, the first end of the second capacitor C2 is connected to the ground line and serves as the first end of the desaturation detection subcircuit 12, the second end of the second capacitor C2 and the first end of the third resistor R3 serve as the second end of the saturation detection subcircuit, the second end of the third resistor R3 is connected to the anode end of the diode D2, the cathode end of the diode D2 serves as the third end of the desaturation detection subcircuit 12, and the source of the IGBT device 20 is connected to the ground line.

[0071] The IGBT driving circuit of the present embodiment further includes a third capacitor C3, a fourth capacitor C4 and a fifth capacitor C5, wherein the first end of the third capacitor C3 and the first end of the fourth capacitor C4 are both connected to the second end of the driving optocoupler 10, the second end of the third capacitor C3 and the first end of the fifth capacitor C5 are both connected to the fourth end of the driving optocoupler 10, the second end of the fourth capacitor C4 and the second end of the fifth capacitor C5 are both connected to the fifth end of the driving optocoupler 10; the fourth end of the driving optocoupler 10 is also connected to the positive voltage power supply VCC1, and the fifth end of the driving optocoupler 10 is also connected to the negative voltage power supply VCC2.

[0072] Specifically, when the IGBT device 20 is turned on normally, the third terminal of the driver optocoupler 10 outputs a weak current and detects the pin detection voltage. At this time, the pin detection voltage is lower than the preset threshold of the trigger voltage of the third terminal of the driver optocoupler 10, and the optocoupler does not report an overcurrent fault. If the output current of the third terminal of the driver optocoupler 10 is I1, the voltage value at this time is:

[0073] U1=Vce+V D2+I1×R3

[0074] Wherein, Vce is the voltage of the IGBT device 20, V D2 is the voltage of the second diode D2, and R3 is the resistance of the third resistor R3.

[0075] When an overcurrent fault occurs, Vce increases, the pin detection voltage of the third end of the driving optocoupler 10 increases, and the fifth capacitor C5 starts to charge. When the fifth capacitor C5 is charged to the preset threshold of the trigger voltage of the third end of the driving optocoupler 10, the driving optocoupler 10 generates an overcurrent fault signal, and the first end of the driving optocoupler 10 outputs a negative voltage signal as a shutdown pulse of the IGBT device 20, thereby shutting down the IGBT device 20.

[0076] In a specific implementation, the first end of the driving optical coupler 10 is Figure 2 The VOUT pin in the drive optocoupler 10 is Figure 2 The VE pin in the drive optocoupler 10 is Figure 2 The DESAT pin in the drive optocoupler 10 is Figure 2 The VCC2 pin in the drive optocoupler 10 is Figure 2 VEE foot in.

[0077] The IGBT driving circuit of the present embodiment includes a driving optocoupler 10 and a pulse clamping sub-circuit 11. The driving optocoupler 10 is used to output a control signal. The driving pulse clamping sub-circuit 11 switches the working state of the IGBT device 20 and clamps the voltage of the IGBT device 20 when the working state is switched, thereby suppressing the peak pulse generated by the gate when the IGBT device 20 switches the working state, and effectively avoiding the risk of the IGBT being mistakenly turned on.

[0078] Based on a general inventive concept, the present application also provides an IGBT driving device. Figure 3 FIG. 1 is a circuit block diagram of an embodiment of an IGBT driving device of the present invention. Figure 3 As shown, the IGBT driving device of this embodiment includes an IGBT device 20 and the IGBT driving circuit 21 of the above embodiment. The IGBT device 20 is connected to the IGBT driving circuit 21.

[0079] It can be understood that the same or similar parts of the above embodiments can be referenced to each other, and the contents not described in detail in some embodiments can refer to the same or similar contents in other embodiments.

[0080] It should be noted that, in the description of the present invention, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. In addition, in the description of the present invention, unless otherwise specified, the meaning of "plurality" refers to at least two.

[0081] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0082] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A driving circuit for an IGBT, It is characterized in that Including driving optocoupler and pulse clamping sub-circuit; The first end of the driving optical coupler is connected to the input end of the pulse clamping subcircuit, and the output end of the pulse clamping subcircuit is connected to the gate of the IGBT device; The driving optical coupler is used to output a control signal to drive the pulse clamping sub-circuit to switch the working state of the IGBT device, and clamp the voltage of the IGBT device when switching the working state, so as to suppress the peak pulse generated when the IGBT device switches the working state; The pulse clamp subcircuit includes a signal gating unit and two-way execution units; The input end of the signal gating unit serves as the input end of the pulse clamping subcircuit, the first output end of the signal gating unit is connected to the input end of one of the execution units, and the second output end of the signal gating unit is connected to the input end of another execution unit; the signal gating unit is used to select the first output end of the signal gating unit or the second output end of the signal gating unit according to the control signal; The output ends of the two execution units serve as the output ends of the pulse clamping subcircuit; The signal gating unit includes a first triode and a second triode; The first end of the first triode and the first end of the second triode serve as input ends of the signal gating unit, the second end of the first triode is connected to a positive voltage power supply, the second end of the second triode is connected to a negative voltage power supply, the third end of the first triode serves as a first output end of the signal gating unit, and the third end of the second triode serves as a second output end of the signal gating unit; When the control signal includes a positive voltage signal, the first transistor is turned on to select the first output end of the signal gating unit; when the control signal includes a negative voltage signal, the second transistor is turned on to select the second output end of the signal gating unit; Each execution unit includes a third triode and a voltage regulator tube; The first end of the third triode serves as the input end of each execution unit, the second end of the third triode is connected to the first end of the voltage regulator tube, the third end of the third triode is connected to the ground line, the second end of the voltage regulator tube is connected to the first end of the third triode and serves as the output end of each execution unit; If the first output terminal of the signal gating unit is gated, the third transistor in the execution unit connected to the first output terminal of the signal gating unit is turned on, the gate voltage value of the IGBT device is greater than the turn-on threshold, and the IGBT device is turned on; The voltage regulator of the execution unit connected to the first output terminal of the signal gating unit clamps the voltage when the IGBT device is turned on, thereby suppressing the spike pulse generated when the IGBT device is turned on; If the second output terminal of the signal gating unit is gated, the third transistor in the execution unit connected to the second output terminal of the signal gating unit is turned on, the gate voltage value of the IGBT device is less than the turn-off threshold, and the IGBT device is turned off; The voltage regulator of the execution unit connected to the second output terminal of the signal gating unit clamps the voltage when the IGBT device is turned off, thereby suppressing the spike pulse generated when the IGBT device is turned off.

2. The IGBT driving circuit according to claim 1, It is characterized in that The first transistor includes an NPN transistor, and the second transistor includes a PNP transistor; The first ends of the first transistor and the second transistor are both bases, the second ends of the first transistor and the second transistor are both collectors, and the third ends of the first transistor and the second transistor are both emitters.

3. The IGBT driving circuit according to claim 1, It is characterized in that The third transistor comprises an NPN transistor; The first end of the third triode is a base, the second end of the third triode is a collector, and the third end of the third triode is an emitter.

4. The IGBT driving circuit according to claim 1, It is characterized in that Each execution unit further comprises a first resistor; The first end of the first resistor is connected to the first end of the third transistor, and the second end of the first resistor is connected to the second end of the voltage regulator.

5. The IGBT driving circuit according to claim 1, It is characterized in that Also includes a second resistor and a first capacitor; The first end of the second resistor and the first end of the first capacitor are respectively connected to the second end of the voltage regulator tube, and the second end of the second resistor and the second end of the first capacitor are connected to the ground line.

6. The IGBT driving circuit according to claim 1, It is characterized in that Also included is a desaturation detection subcircuit; The first end of the desaturation detection subcircuit is connected to the second end of the driving optocoupler, the second end of the desaturation detection subcircuit is connected to the third end of the driving optocoupler, and the third end of the desaturation detection subcircuit is connected to the drain of the IGBT device; The third end of the driving optocoupler obtains a pin detection voltage that is positively correlated with the voltage of the IGBT device based on the desaturation detection subcircuit. If the pin detection voltage is greater than a preset threshold, the first end of the driving optocoupler is controlled to output the negative voltage signal.

7. The IGBT driving circuit according to claim 6, It is characterized in that The desaturation detection subcircuit includes a third resistor, a second capacitor and a diode; A first end of the second capacitor is connected to a ground line and serves as a first end of the desaturation detection subcircuit; The second end of the second capacitor and the first end of the third resistor serve as the second end of the saturation detection subcircuit, the second end of the third resistor is connected to the anode end of the diode, and the cathode end of the diode serves as the third end of the desaturation detection subcircuit; The source of the IGBT device is connected to a ground line.

8. The IGBT driving circuit according to claim 6, It is characterized in that Also includes a third capacitor, a fourth capacitor and a fifth capacitor; The first end of the third capacitor and the first end of the fourth capacitor are both connected to the second end of the driving optocoupler, the second end of the third capacitor and the first end of the fifth capacitor are both connected to the fourth end of the driving optocoupler, and the second end of the fourth capacitor and the second end of the fifth capacitor are both connected to the fifth end of the driving optocoupler; The fourth end of the driving optical coupler is also connected to the positive voltage power supply, and the fifth end of the driving optical coupler is also connected to the negative voltage power supply.

9. The IGBT driving circuit according to claim 1, It is characterized in that Also including a fourth resistor and a fifth resistor; The first output end of the signal gating unit is connected to the input end of one execution unit through the fourth resistor, and the second output end of the signal gating unit is connected to the input end of another execution unit through the fifth resistor.

10. The IGBT driving circuit according to claim 1, It is characterized in that Also including a sixth resistor; The first end of the driving optical coupler is connected to the input end of the pulse clamping sub-circuit through the sixth resistor.

11. An IGBT driving device, It is characterized in that A driving circuit comprising an IGBT device and the IGBT according to any one of claims 1 to 10.

Images