A method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering and its application

Abstract

The present invention discloses a method for fabricating an intelligent label chip molded packaging module by Au-Sn eutectic soldering, which utilizes the Au bump joints of the intelligent label chip itself to form reliable Au-Sn eutectic soldering with the tin plating layer on the carrier tape or lead frame. The method for fabricating an intelligent label chip molded packaging module by Au-Sn eutectic soldering of the present invention neither requires the commonly used silver plating layer on the metal carrier tape or lead frame, nor requires wire bonding interconnection between the chip Au bump joints and the carrier tape or lead frame, which can reduce the cost of using precious metals, greatly reduce the thickness of the entire intelligent label chip module, has excellent reliability, and can perform high-density intelligent label chip molded packaging on the carrier tape. The present invention also discloses an application of the method for fabricating an intelligent label chip molded packaging module by Au-Sn eutectic soldering.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering and its application. Background Art

[0002] The encapsulation of smart card modules is divided into two categories: contact modules and non-contact modules. The intelligent label chip module encapsulated by the Au—Sn eutectic soldering technology of the present invention belongs to the module with non-contact chip molding encapsulation having Au bump joints.

[0003] At present, for the encapsulation of intelligent label chip modules in the market, since the chip area is very small, it can reach 0.5*0.5 mm or even smaller. The vast majority of application fields are in low-end applications, such as common access control applications, etc. Among them, some chip encapsulations are achieved by using a molding encapsulation technology to encapsulate a chip with two gold wires soldered on a common silver-plated metal carrier tape.

[0004] So far, in a considerable number of low-end applications, the intelligent label chips directly adopt a low-cost welding method of ACP (anisotropic conduct paste). After thermocompression curing the Au bump joints on the chip and the antenna solder joints on the PET, the Au bump joints and the aluminum layer on the PET form electrical interconnections.

[0005] In some application scenarios with relatively high temperature resistance requirements and high reliability requirements, the ACP welding method is generally not used, but molding encapsulation is adopted.

[0006] Please refer to Figure 1 , currently, the thickness of the intelligent label chip 1' is about 150 microns. Each label module chip 1' has two gold-plated bump joints (referred to as Au bump joints 11') and two test points 12'. The Au bump joints 11' are in a square shape with a side length of 60 microns to 80 microns. The Au bump joints 11' protrude from the chip surface by a height of about 8 microns to 10 microns. The technology of wafer chemical electroplating Au bump joints is very mature and the cost is low. Currently, almost all large wafers of intelligent label chips are electroplated with Au bump joints when leaving the factory. These two Au bump joints 11' of the label module chip also need to form electrical interconnections with the welding areas of the metal carrier tape leads of the non-contact label module under certain process conditions using gold wires or alloy wires.

[0007] Please refer to Figure 2, in a conventional molding and encapsulation application, first, the chip 1' with gold bump solder joints 11' is soldered and mounted in the middle of the encapsulation area of the metal tape carrier 2'; then, two gold wires 3' are used to thermosonically electrically interconnect the two gold bump solder joints 11' on the intelligent label chip 1' (or non-contact chip) with the two lead welding ends 21' on the silver-plated layer of the carrier tape 2' (or non-contact metal carrier tape); finally, the chip 1' and the two gold wires 3' are integrally molded and encapsulated 4' by a molding process. For example, the currently mass-produced MOA series of module encapsulations are encapsulated in this form.

[0008] Please refer to Figure 2 , the area of the intelligent label chip 1' is generally very small, and most are less than 1 square millimeter. Some even reach 0.3 * 0.3 millimeters. Usually, a gold bump solder joint 11' with a thickness of about 10 microns has been plated on the bonding pads on the surface of the intelligent label chip with an area of about 80 * 80 microns. One end of the gold wire 3' is welded to the gold bump solder joint 11' of the chip 1' by a gold wire ball bonder, and the other end of the gold wire 3' is welded to the silver-plated lead welding end 21' of the metal carrier tape 2'. Then, the other gold wire also completes the interconnection of the other gold bump solder joint 11' and the other lead welding end 21' of the metal carrier tape in the same way. In this way, two gold wires and four solder joints realize the conventional interconnection between the gold bump solder joints of the chip and the metal carrier tape.

[0009] In the currently conventional non-contact module molding and encapsulation process, the commonly used carrier tape is a tape base such as a copper-tin alloy (CuSn6) tape base, and the thickness of the tape base is generally 80 microns, and a silver layer with a thickness of a few microns is electroplated on the surface of the tape base.

[0010] In semiconductor packaging and soldering technology, there are two very famous, stable, and reliable low-melting-point eutectic soldering methods, gold-silicon low-melting-point eutectic soldering and gold-tin low-melting-point eutectic soldering. The melting point of the eutectic gold-tin alloy is 280 °C, and it has excellent soldering process performance and the reliability of solder joints. Summary of the Invention

[0011] The object of the present invention is to overcome the defects of the prior art and provide a method for manufacturing an intelligent label chip molding and encapsulation module by gold-tin eutectic soldering. By using the gold-tin eutectic soldering technology without gold wires and without additional gold-tin solder sheets, neither the silver-plated layer commonly used in metal frames nor the gold wire ball bonding interconnection between the chip bump solder joints and the lead frame is required, which can reduce the cost of using precious metals, greatly reduce the thickness of the entire label module, has excellent reliability, and can perform high-density molding and encapsulation on the carrier tape.

[0012] Another object of the present invention is to provide an application of a method for manufacturing an intelligent label chip molding and encapsulation module by gold-tin eutectic soldering.

[0013] The technical solution for achieving the above object is: a method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering, comprising the following steps:

[0014] S1, electroplating a tin coating on two lead soldering end regions on the metal tape base of a tape carrier, or electroplating a tin coating on the entire metal tape base of the tape carrier, or electroplating a tin coating on two lead soldering ends of a sheet-like lead frame, or electroplating a tin coating on the entire sheet-like lead frame;

[0015] S2, preheating the tape carrier or lead frame with the tin coating on a substrate heating platform;

[0016] S3, clamping or vacuum sucking the intelligent label chip with a soldering head, and with the two Au bump solder joints of the intelligent label chip facing downwards, aligning the two Au bump solder joints on the intelligent label chip with the corresponding two lead soldering ends on the tape carrier or lead frame one by one;

[0017] S4, when the soldering head for pulse heating performs ultrasonic or electromagnetic vibration during soldering, relatively rubbing against the tin coating on the tape carrier or lead frame to wipe off the oxide layer on the surface of the tin coating on the tape carrier or lead frame. The soldering head heats the intelligent label chip to make the temperature of the intelligent label chip exceed the Au-Sn eutectic soldering temperature of 280 °C, and then the soldering head presses down for soldering. When the two Au bump solder joints of the intelligent label chip come into contact with the two lead soldering ends, Au-Sn eutectic soldering is formed.

[0018] S5, for soldering in a time scale of up to dozens of milliseconds and a pulse heating soldering head, so that the soldering interface can quickly reach the eutectic temperature during soldering. Generally, an inert protective gas does not need to be added to the soldering interface at this time. If the soldering density is very high and the tin coating is at a relatively high temperature for a long time, an inert protective gas needs to be added to the solderable area of the easily oxidizable tin layer during soldering to avoid excessive oxidation of the tin layer surface and affect the soldering reliability.

[0019] In the above method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering, the thickness of the tin coating is several microns, typically 1 - 3 microns.

[0020] In the above method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering, in step S2, the preheating temperature on the substrate heating platform is usually 100 °C - 150 °C.

[0021] In the above method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering, in steps S3 and S4, the soldering head is an ultrasonic soldering head, which can be pulse heated or constantly heated. The soldering head is mounted on an ultrasonic transducer vibrating arm, and the frequency of the ultrasonic wave on the ultrasonic transducer vibrating arm is 40 - 100 kHz. While the soldering head presses downward for soldering, the ultrasonic wave is turned on. Under the combined action of the heating temperature, pressure, and ultrasonic power, when the Au bump on the intelligent label chip comes into contact with the tin plating layer on the corresponding lead soldering end, the Au—Sn eutectic soldering is completed.

[0022] In the above method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering, the ultrasonic transducer vibrating arm is also a chip pick - up and soldering arm. The ultrasonic transducer vibrating arm sucks the intelligent label chip from the large - wafer carrier, ensures that the soldering surface of the Au bump faces downward, and at the same time, the ultrasonic soldering head starts to heat the intelligent label chip, making the temperature of the intelligent label chip slightly exceed the Au—Sn eutectic soldering temperature of 280 °C.

[0023] In the above method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering, in step S4, while the soldering head heats the intelligent label chip, a pulse heating device is used to pulse - heat the two lead soldering ends below the substrate heating platform, heating from the upper and lower directions of the welding area simultaneously. When the two Au bumps of the intelligent label chip come into contact with the two lead soldering ends, the Au—Sn eutectic soldering is formed.

[0024] In the above method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering, during the Au—Sn eutectic soldering in step S4, the temperature of the intelligent label chip and / or the lead soldering end is usually 300 °C - 320 °C.

[0025] In the above method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering, the molding thickness of the intelligent label chip molding and encapsulation module manufactured by this method is less than or equal to 0.22 mm.

[0026] In the above method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering, by thinning the thickness of the intelligent label chip and the carrier tape, the molding thickness of the intelligent label chip molding and encapsulation module manufactured by this method can be less than or equal to 0.15 mm.

[0027] An application of a method for manufacturing an intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering. This method is applicable to the eutectic soldering of an intelligent label chip with Au bumps and a carrier tape or lead frame with a tin plating layer, and is also applicable to the eutectic soldering of an intelligent label chip with Au bumps and a tin plating layer on a high - temperature resistant organic substrate or inorganic substrate.

[0028] The method for manufacturing an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering according to the present invention and its application have the following advantages:

[0029] (1) It is possible to use a roll of metal carrier tape of a conventional non-contact module with tin plating on the surface of the welding area, or a sheet metal lead frame with tin plating on the welding area;

[0030] (2) Instead of using two conventional gold wires for interconnection, a reliable Au-Sn eutectic solder joint is directly formed between the existing Au bump pads on the chip and the tin plating layer of the carrier tape or the metal frame. One-time eutectic soldering simultaneously completes the reliable interconnection of two Au bump pads on the chip and two lead welding ends. Compared with the existing label module molding and encapsulation, the cost is reduced;

[0031] (3) By using Au-Sn eutectic soldering without gold wires and additional Au-Sn solder sheets, and without using gold wire soldering, there is no restriction on the encapsulation thickness caused by the gold wire arc height; in this way, the thickness of the label module with Au-Sn eutectic soldering can be greatly reduced, and it is very easy to reach 0.22 mm;

[0032] (4) The thickness of the intelligent label chip module manufactured by using the Au-Sn eutectic soldering according to the present invention directly depends on the thickness of the metal carrier tape and the chip; if the chip is further thinned and a thinner metal carrier tape is used, the final molded product thickness of the entire label module can reach 0.15 mm or even thinner (see Figure 5 );

[0033] (5) Since there is no gold wire interconnection and ACP epoxy resin soldering is not used, not only the material cost is reduced and the reliability is improved, but also high-speed and high-density encapsulation can be achieved. Its encapsulation density can reach at least three times that of the conventional MOA series encapsulation, and it can meet most of the ultra-thin and high-reliability application scenarios;

[0034] (6) The Au-Sn eutectic soldering of the Au bump pads according to the present invention is also applicable to the applications of various chips with Au bump pads and tin-plated metal carrier tapes or various organic or inorganic tin-plated substrates in the welding area. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a schematic structural diagram of a label module chip and Au bump pads;

[0036] Figure 2 It is a schematic structural diagram of a conventional label module molding and encapsulation module;

[0037] Figure 3 It is a schematic diagram of the principle of the method for manufacturing an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering according to the present invention;

[0038] Figure 4 It is a schematic structural diagram of Au-Sn eutectic soldering;

[0039] Figure 5 This is a schematic diagram of the module structure after the intelligent label chip is molded and encapsulated by Au-Sn eutectic soldering for the present invention. Specific embodiments

[0040] In order to enable those skilled in the art of this technology to better understand the technical solution of the present invention, the following will explain its specific embodiments in detail with reference to the accompanying drawings:

[0041] Please refer to Figure 3 and Figure 4 , the best embodiment of the present invention, a method for manufacturing a molded and encapsulated module of an intelligent label chip by Au-Sn eutectic soldering, includes the following steps:

[0042] S1, electroplate a layer of tin plating 21 on two lead soldering end regions on the metal tape base of the tape carrier 2 in a reel, or electroplate a layer of tin plating 21 on the entire metal tape base of the tape carrier in a reel, or electroplate a layer of tin plating 21 on two lead soldering ends on the sheet-like lead frame, or electroplate a layer of tin plating 21 on the entire sheet-like lead frame; the thickness of the tin plating 21 is 1 to 3 microns.

[0043] S2, preheat the tape carrier or lead frame with the tin plating 21 on the substrate heating platform 3, and the preheating temperature on the substrate heating platform is 100°C to 150°C;

[0044] S3, the soldering head 4 clamps or vacuum holds the intelligent label chip 1, and the two gold bump solder joints 11 of the intelligent label chip 1 face downward, and align the two gold bump solder joints 11 on the intelligent label chip 1 with the corresponding two lead soldering ends on the tape carrier or lead frame one by one;

[0045] S4, the soldering head 4 makes ultrasonic or electromagnetic vibrations, and relatively rubs against the tin plating on the tape carrier or lead frame under a certain pressure to wipe off the oxide layer on the surface of the tin plating on the tape carrier or lead frame. The magnitude of the applied pressure depends on the chip area. Excessive or too small pressure will affect the reliability of soldering, generally dozens of grams. The soldering head simultaneously heats the intelligent label chip 1 to make the temperature of the intelligent label chip 1 exceed the Au-Sn eutectic soldering temperature of 280°C. Usually, the temperature of the applied intelligent label chip is 300°C to 320°C to compensate for the heat loss at the soldering interface during Au-Sn eutectic soldering; then the soldering head presses downward for soldering, and the two gold bump solder joints 11 of the intelligent label chip 1 will form Au-Sn eutectic soldering when contacting the two lead soldering ends, and an Au-Sn eutectic soldering layer 22 will be formed between the gold bump solder joints 11 and the lead soldering ends, and 1 time of eutectic soldering simultaneously completes the reliable interconnection of the 2 gold bump solder joints of the chip and the 2 lead soldering ends.

[0046] The soldering head is made of a rigid material such as cemented carbide or ceramic that is resistant to high temperature and wear.

[0047] In steps S3 and S4, the welding head 4 is an ultrasonic welding head. The welding head 4 is installed on the ultrasonic transducer vibration arm. The frequency of the ultrasonic wave on the ultrasonic transducer vibration arm is 40 - 100 kHz. While the welding head 4 presses down for welding, the ultrasonic wave is turned on. Under the action of the ultrasonic power, when the gold bump solder joints 11 on the intelligent label chip 1 come into contact with the tin plating layer 21 on the corresponding lead welding end, the gold-tin eutectic welding is completed. The welding head on the ultrasonic transducer arm starts the ultrasonic welding time, and usually the entire gold-tin eutectic welding of the intelligent label chip and the carrier tape or lead frame is completed in dozens of milliseconds.

[0048] The ultrasonic transducer vibration arm is also the chip suction and placement welding arm. The ultrasonic transducer vibration arm sucks the intelligent label chip from the large wafer carrier and ensures that the welding surface of the gold bump solder joint faces downward. At the same time, the ultrasonic welding head starts to heat the intelligent label chip, so that the temperature of the intelligent label chip exceeds the gold-tin eutectic welding temperature of 280 °C.

[0049] After the entire carrier tape or lead frame is preheated, in order to reach the appropriate temperature required for eutectic welding, in addition to heating with the welding head, it is also possible to instantaneously heat the bottom of the welding area of the carrier tape or lead frame with a higher temperature to ensure that the welding interface between the gold bump solder joint and the tin plating layer of the carrier tape reaches or exceeds the temperature required for eutectic welding of 280 degrees Celsius. That is, for the purpose of achieving high-speed welding, heating is carried out simultaneously below the metal carrier tape welding area and with the welding head, avoiding excessive oxidation of the tin welding layer. For example, while the welding head heats the intelligent label chip, a pulse heating device 5 is used to pulse-heat the two lead welding ends below the substrate heating platform. In this way, heating is carried out simultaneously from the upper and lower directions of the welding area. When the two gold bump solder joints of the intelligent label chip come into contact with the two lead welding ends, gold-tin eutectic welding is formed. During the gold-tin eutectic welding, the temperature of the intelligent label chip and the lead welding end is 300 °C - 320 °C.

[0050] The mechanical rubbing reliability formed by the ultrasonic wave can be adjusted. The adjustment of the ultrasonic power can be gradually increased to be able to firmly complete the eutectic welding and not damage the chip edge. The additional method of pulse heating can instantaneously heat the welding area from below the substrate heating platform. In this way, the instantaneous heating required to complete the gold-tin eutectic welding can be completed by the heating of the ultrasonic welding head itself, or can be achieved by heating simultaneously from the upper and lower directions of the welding area. For the gold-tin eutectic welding with heating from the upper and lower directions of the welding area, the welding speed will be faster, and the required heating temperature will also be slightly lower than that of single-direction heating. We can easily find the appropriate optimal heating temperature from experiments, avoid excessive oxidation of the tin layer, and form a reliable gold-tin eutectic welding.

[0051] Such rapid heating and millisecond-level soldering generally do not require the passage of a protective gas in the soldering area in the method for fabricating a molded package module of an intelligent label chip by Au-Sn eutectic soldering according to the present invention.

[0052] Please refer to Figure 5 , after the Au-Sn eutectic soldering completes the soldering of the convex solder joints of chip 1 to the tinned carrier tape 2 or lead frame, the next step is the conventional final molding and encapsulation 6 of the chip carrier tape that has been soldered by Au-Sn eutectic. The molding thickness of the final module of the intelligent label chip molded package module fabricated by the method for fabricating an intelligent label chip molded package module by Au-Sn eutectic soldering according to the present invention is usually 0.22 mm. After the thickness of the carrier tape or lead frame or the chip is further thinned, the thickness of the entire intelligent label chip molded package module can even reach 0.15 mm or thinner.

[0053] An application of a method for fabricating an intelligent label chip molded package module by Au-Sn eutectic soldering. This method is applicable to the eutectic soldering of an intelligent label chip with gold convex solder joints to a carrier tape or lead frame with a tinned layer, and is also applicable to the eutectic soldering of an intelligent label chip with gold convex solder joints to a tinned layer on a high-temperature resistant organic substrate or inorganic substrate. For example, the soldering of a tinned layer on various high-temperature resistant organic substrates such as polyimide or inorganic substrates such as ceramics and glass to gold convex solder joints.

[0054] The method for fabricating an intelligent label chip molded package module by Au-Sn eutectic soldering according to the present invention, using an Au-Sn eutectic soldering technology without gold wires and without externally added Au-Sn solder sheets, can fabricate a molded intelligent label chip module with Au-Sn eutectic soldering that is ultra-thin, highly reliable, low-cost, high-density, and has a high soldering speed. Due to the advantages of high reliability, fast soldering speed, ultra-thinness, and low cost of the method according to the present invention, the lead-free Au-Sn eutectic soldering method for intelligent label chips has broad application prospects.

[0055] Select a soldering head according to the appropriate required welding chip specifications. Under the action of ultrasonic or electromagnetic vibration, the oxide layer on the surface of the tin plating layer of the carrier tape or lead frame is erased under a certain pressure, so that the gold bump joints on the chip and the tin plating layer on the reel carrier tape or lead frame form a reliable gold-tin eutectic weld under a certain temperature and pressure. Neither the commonly used silver plating layer on the metal frame nor the gold wire ball bonding interconnection between the chip bump joints and the lead frame is required, which can reduce the cost of using precious metals and greatly reduce the thickness of the entire label module and have excellent reliability. Due to the use of solder joints without gold wires, the overall reliability of the module is increased; and since there is no control of the gold wire arc height, the thickness of the final molded package of the entire label module using eutectic welding can be controlled to be very thin. The thickness of the intelligent label chip molded package module manufactured by the method of the present invention can be easily controlled within 0.22 mm. Since the present invention does not require gold wire soldering, high-density molded packaging can be carried out on a 35-mm-wide carrier tape, and its density can be 3 times or higher than that of the commonly used MOA series.

[0056] In summary, the method for manufacturing an intelligent label chip molded package module by gold-tin eutectic welding of the present invention adopts a gold-tin eutectic welding technology without gold wires and without additional gold-tin welding sheets. Neither the commonly used silver plating layer on the metal frame nor the gold wire ball bonding interconnection between the chip bump joints and the lead frame is required, which can reduce the cost of using precious metals, greatly reduce the thickness of the entire label module, have excellent reliability, and can carry out high-density molded packaging on the carrier tape.

[0057] Those of ordinary skill in the art in this technical field should recognize that the above embodiments are only used to illustrate the present invention and are not used to limit the present invention. As long as it is within the scope of the spirit of the present invention, changes and modifications to the above-described embodiments will fall within the scope of the claims of the present invention.

Claims

1. A method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering, characterized in that, It includes the following steps: S1, electroplate a layer of tin plating on two lead welding end areas on the metal tape base of the tape-type carrier tape, or electroplate a layer of tin plating on the entire metal tape base of the tape-type carrier tape, or electroplate a layer of tin plating on two lead welding ends on the sheet-type lead frame, or electroplate a layer of tin plating on the entire sheet-type lead frame; S2, preheat the carrier tape or lead frame with the tin plating layer on the substrate heating platform, and the preheating temperature on the substrate heating platform is 100°C to 150°C; S3, the welding head holds or vacuum-sucks the intelligent label chip, and the two gold bump solder joints of the intelligent label chip face downward. Align the two gold bump solder joints on the intelligent label chip with the corresponding two lead welding ends on the carrier tape or lead frame one by one; S4, the welding head performs ultrasonic or electromagnetic vibration and relatively rubs against the tin plating layer on the carrier tape or lead frame to wipe off the oxide layer on the surface of the tin plating layer on the carrier tape or lead frame. The welding head heats the intelligent label chip to make the temperature of the intelligent label chip exceed the gold-tin eutectic welding temperature of 280°C, and then the welding head presses downward for welding. When the two gold bump solder joints of the intelligent label chip contact the two lead welding ends, a gold-tin eutectic welding is formed; In steps S3 and S4, the welding head uses a heated ultrasonic welding head. The welding head is installed on the ultrasonic transducer vibration arm. The frequency of the ultrasonic wave on the ultrasonic transducer vibration arm is 40 - 100 kHz. When the welding head presses downward for welding, the ultrasonic wave is turned on. Under the action of the power of the ultrasonic wave, when the gold bump solder joints on the intelligent label chip contact the tin plating layer on the corresponding lead welding end, the eutectic temperature is reached, and the gold-tin eutectic welding is completed at the same time; The ultrasonic transducer vibration arm is also a chip suction and placement welding arm. The ultrasonic transducer vibration arm sucks out the intelligent label chip from the large wafer stretcher, ensures that the welding surface of the gold bump solder joint faces downward, and at the same time the ultrasonic welding head starts to heat the intelligent label chip to make the temperature of the intelligent label chip exceed the gold-tin eutectic welding temperature of 280°C; In step S4, while the welding head heats the intelligent label chip, a pulse heating device is used to pulse-heat the two lead welding ends under the substrate heating platform, heating from the upper and lower two directions of the welding area. When the two gold bump solder joints of the intelligent label chip contact the two lead welding ends, a gold-tin eutectic welding is formed; In step S4, during the gold-tin eutectic welding, the temperature of the intelligent label chip and / or the lead welding end is slightly higher than the gold-tin eutectic temperature, generally 300°C to 320°C.

2. The method for manufacturing an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering according to claim 1, wherein The thickness of the tin plating layer is 1 - 3 microns.

3. A method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering, characterized in that, The molding thickness of the intelligent label chip molded package module manufactured by this method is less than or equal to 0.22 mm.

4. A method for fabricating an intelligent label chip molding and encapsulation module by Au-Sn eutectic soldering, characterized in that, The molding thickness of the intelligent label chip molded package module manufactured by the method of further thinning the thickness of the intelligent label chip and the carrier tape is less than or equal to 0.15 mm.

5. Use of the method for manufacturing the intelligent label chip molding and encapsulation module by Au—Sn eutectic soldering according to claim 1, characterized in that, This method is applicable to the eutectic welding of an intelligent label chip with gold bump solder joints and a carrier tape or lead frame with a tin plating layer, and is also applicable to the eutectic welding of a chip with gold bump solder joints and a tin plating layer on a high-temperature resistant organic substrate or inorganic substrate.

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