Method of manufacturing a semiconductor device and corresponding semiconductor device

Abstract

Embodiments of the present disclosure relate to methods of manufacturing semiconductor devices and corresponding semiconductor devices. A method of manufacturing a semiconductor device, such as an integrated circuit, includes arranging one or more semiconductor dies on a support surface. A laser direct structuring material is structured onto the support surface on which the one or more semiconductor dies are arranged. Laser beam processing is performed on the laser direct structuring material structured onto the support surface on which the one or more semiconductor dies are arranged to provide electrically conductive structures for the one or more semiconductor dies arranged on the support surface. The one or more semiconductor dies provided with the electrically conductive structures are separated from the support surface.

Description

TECHNICAL FIELD

[0001] The present specification relates to manufacturing semiconductor devices.

[0002] For example, one or more embodiments can be applied to manufacturing semiconductor devices such as integrated circuits (ICs). BACKGROUND

[0003] There are various techniques available for manufacturing semiconductor devices such as, for example, QFN (Quad Flat No-lead) semiconductor devices.

[0004] Features desirable in the art can include:

[0005] Reduced assembly costs;

[0006] Replacement of lead frames with custom substrates;

[0007] High flexibility in substrate manufacturing;

[0008] Modular configuration for multiple dies; and / or

[0009] Ability to avoid wire bonding. SUMMARY

[0010] The present disclosure provides various embodiments that facilitate providing further improvements along the lines discussed above.

[0011] One or more embodiments can relate to corresponding semiconductor devices (e.g., integrated circuits).

[0012] One or more embodiments can provide one or more of the following advantages:

[0013] Low cost structure;

[0014] Possibility to avoid wire bonding;

[0015] Good thermal performance;

[0016] Possibility to use plastic lead frames; and / or

[0017] Facilitate solder inspection.

[0018] In one or more embodiments, the present disclosure provides a method comprising: arranging at least one semiconductor die on a support surface; forming a laser direct structuring material onto the support surface on which the at least one semiconductor die is arranged; laser beam processing the laser direct structuring material formed onto the support surface on which the at least one semiconductor die is arranged, providing an electrically conductive structure for the at least one semiconductor die arranged on the support surface; and separating the at least one semiconductor die provided with the electrically conductive structure from the support surface.

[0019] In one or more embodiments, the present disclosure provides a semiconductor device comprising at least one semiconductor die provided with a conductive structure formed according to the method described herein. The semiconductor device further comprises a package molding material molded to the at least one semiconductor die, the package molding material encapsulating the at least one semiconductor die and at least a portion of the conductive structure provided thereon.

[0020] In one or more embodiments, the present disclosure provides a method comprising: forming a first layer of laser direct molding material on a surface of a substrate, a plurality of semiconductor dies being located on the surface of the substrate; forming a first conductive structure on the first layer of laser direct molding material by laser beam processing the first layer of laser direct molding material, the first conductive structure being electrically coupled to the plurality of semiconductor dies; and separating the plurality of semiconductor dies and the first conductive structure from the surface of the substrate. BRIEF DESCRIPTION OF DRAWINGS

[0021] One or more embodiments will now be described, by way of example, with reference to the accompanying drawings, in which:

[0022] Figures 1A-1I is an example of possible actions in a method according to an embodiment;

[0023] Figure 2 is a cross-sectional view of a semiconductor device according to an embodiment;

[0024] Figure 3 is a cross-sectional view of a semiconductor device according to an embodiment;

[0025] Figure 4 is a plan view of certain elements of a semiconductor device example of an embodiment;

[0026] Figure 5 is Figure 4 is a detailed view of the portion indicated by the arrow V of

[0027] Figure 6 and Figure 7 substantially correspond to Figure 5 the views of

[0028] It is to be understood that the various figures maybe not be drawn to scale and that the embodiments can involve further actions than those explicitly described and depicted. DETAILED DESCRIPTION

[0029] In the following description, one or more specific details are described to provide an example embodiment of the disclosure. One or more other embodiments can not include all of the specific details described below with respect to the one or more particular embodiments. Embodiments can be obtained from the one or more particular embodiments without one or more of the specific details, or by other methods, components, materials, and so forth. Other instances of known structures, materials, or operations have not been described in detail in order to avoid obscuring the intention of the one or more particular embodiments.

[0030] Reference throughout this specification to "an embodiment" or "one embodiment" means that a particular configuration, structure, or characteristic described follows includes a configuration described in at least one embodiment. Thus, appearances of the phrases "in one embodiment" or "in an embodiment" are not necessarily referring to the same embodiment described. Furthermore, the particular configurations, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0031] As used herein, the reference is made only for convenience and thus does not define the scope of protection or the scope of the embodiments.

[0032] Laser direct structuring (LDS) is a laser-based mechanical technology that is now widely applied in various sectors of the industrial and consumer electronics markets, for example, high performance antenna integration, where antenna designs can be formed directly on molded plastic parts.

[0033] In one exemplary process, the molded part can be produced from a resin available on the market, which includes additives suitable for the LDS process; the range of resins currently available for this purpose is wide, such as PC, PC / ABS, ABS, LCP, etc.

[0034] In LDS, a laser beam can be used to transfer the desired conductive pattern onto a plastic molding, which can then be metallized (for example via a chemical plating of copper or other metals) to ultimately determine the desired conductive pattern.

[0035] One or more embodiments illustrated herein are based on the recognition that LDS facilitates providing conductive structures (such as vias and lines) in a molding compound without the need for further manufacturing steps and with a high degree of flexibility on the shapes available.

[0036] One or more embodiments can be applied to various types of semiconductor devices such as, by way of non-limiting example, semiconductor devices currently known as QFN, which is an acronym for Quad Flat No Leads.

[0037] One or more embodiments can help provide semiconductor devices that do not include a leadframe. The term "leadframe" (or "leadframe") is currently used (see, for example, the USPC Synoptic Glossary of the United States Patent and Trademark Office) to indicate a metal frame that provides support for an integrated circuit die or chip and electrical leads to interconnect the integrated circuit in the die or chip to other electrical components or contacts.

[0038] One or more embodiments can be based on the recognition that EMC (epoxy molding compound) encapsulated semiconductor packaged devices can integrate electronic functionality on the package that can increase value by increasing package level 1 density: see, for example, "Reliability in MID - barriers, potentials, field of action" by C. Fechtelpeter et al. in the proceedings of the 12th International Conference on Molding Interconnect Technology (IMT 2016) in Wuerzburg, Germany, September 28-29, 2016, pages 88-93 (ISBN 978-1-5090-5429-9).

[0039] Furthermore, it is known that LDS-MID technology can help integrate circuits directly into the chip package housing. For example, this can include AoP (antenna on package) solutions that can be combined with package on package (PoP) solutions, thereby increasing functional density (size and cost reduction).

[0040] Such a solution can utilize state-of-the-art overmolding molding materials for protecting the IC package from environmental stress, while facilitating (very) high selective metallization and adhesion strength (> 20 N / mm 2 ), high heat resistance and low CTE (thermal expansion), and good RF (radio frequency) characteristics and high frequency performance.

[0041] Such a solution can also utilize the development of compression molding and transfer molding techniques, as well as the possibility of providing microvias (through mold vias) with the aid of LDS technology.

[0042] One or more embodiments illustrated herein can involve providing a temporary (sacrificial) support tape (e.g., including a polyimide tape material currently known as Kapton) to which one or more semiconductor chips or dies can be attached, and then molding with a LDS compound.

[0043] Attaching chips on the tape can involve any technique known to those skilled in the art.

[0044] In addition, LDS compounds can include any of a wide range of LDS materials, such as, for example, resins (such as polymeric resins, such as PC, PC / ABS, ABS, LCP currently available on the market).

[0045] After the LDS compound is shaped, laser forming of traces and vias can be performed as needed (and possibly repeatedly) to create wiring that includes multiple (N+1) layers (even quite complex) conductive structures.

[0046] In one or more embodiments, the sacrificial tape can then be removed (i.e., one or more bare dies can be separated from the tape), where it is possible to form solder pads on the back side of the structure thus provided.

[0047] One or more embodiments may include Figures 1A-1I The actions illustrated in the examples below, in which the simultaneous fabrication of multiple semiconductor devices in the final segmentation described below is assumed to be performed in accordance with other conventional methods in the art.

[0048] Figure 1A This is an example of providing the operation of the (sacrificial) support band 10 as described above, wherein one or more semiconductor chips or dies 12 may be attached thereto in a manner known to those skilled in the art.

[0049] Figure 1B This is an example of the action of molding LDS material onto a belt 10 on which a bare sheet 12 is disposed; as mentioned above, a range of commercially available resins, including additives suitable for LDS processes (currently available from various suppliers, such as PC, PC / ABS, ABS, and LCP), can be used for this purpose.

[0050] Figure 1C This is an example of the action of performing LDS processing (laser beam activation L plus possible metallization (such as electroplating) on ​​LDS material 14 to promote or increase conductivity in a manner conventional in the art) to provide the first layer of conductive structure 16.

[0051] Figure 1D Is Figure 1C An example of the action of forming another LDS material 18 (same or different from 14) on the resulting structure.

[0052] Figure 1E This is an example of an action involving LDS processing (laser beam activation L plus possible metallization (such as electroplating) of another LDS material 18 to promote or increase conductivity in a manner conventional in the art) to provide another layer of conductive structure 20. As illustrated herein, such LDS processing may include possible structures such as conductive vias 20' extending through the thickness of layers 14 and / or 18.

[0053] Figure 1F is removal of the sacrificial support plate 10, thereby freeing Figure 1E an example of an action that results in the structure being separated from the tape 10, with possible formation (growth) of the conductive structure 22 on the "back" side of the structure.

[0054] Figure 1G is an example of an (optional) action that shapes another LDS material 24 (the same as or different from 14 and 18) to the back side of the structure. Figure 1F

[0055] Figure 1H is an example of an (optional) action that performs LDS processing (laser beam activation L plus possible metallization (such as electroplating) to facilitate or increase conductivity in a manner conventional in the art) on the LDS material 24 to provide a layer of conductive structure 26 on the back side of the structure. Figure 1F

[0056] Figure 1I is an example of an action that encapsulates the front (top) and / or bottom (back) surfaces of the structure by inkjet printing, sheet molding, or other known techniques.

[0057] One or more embodiments illustrated herein facilitate providing complex 3D wiring using conductive structures of LDS material (see, e.g., 16, 20, 20', 26, 26'). This facilitates avoiding (or at least reducing) the possibility of electrical wiring providing different metal plating trace layers of different thicknesses.

[0058] In some embodiments, formation of the conductive structures (see, e.g., 16, 20, 20', 26, 26') can include an additional step of metallization (e.g., electroplating, etc.) to form conductive material on or in areas of the LDS material that have been processed to form the conductive structure pattern (see, e.g., 16, 20, 20', 26, 26'). The metallization can facilitate or provide the proper conductivity of the conductive structures, e.g., by increasing the conductivity of the conductive structures needed for the semiconductor devices provided herein.

[0059] In one or more embodiments, the use of (metal) lead frames can be avoided.

[0060] In one or more embodiments, EMI (electromagnetic interference) shielding can be provided between layers.

[0061] Figure 2 and Figure 3 are examples of cross-sectional views of semiconductor devices that can be produced as illustrated above. Figure 3 is a semiconductor device that includes Figure 1G and​​Figure 1H Examples of embodiments of optional actions are illustrated in

[0062] In Figure 2 The components or elements in Figure 3 are designated by like reference numerals to the components or elements already discussed in Figures 1A-1I Detailed descriptions will not be repeated for the sake of brevity.

[0063] In Figure 3 The metal growth on the back side of the semiconductor chip or die 12 as illustrated at 22 can take into account that there can be metallization on the back or bottom side of the semiconductor chip or die 12 as well as dedicated wiring to be removed later in the arrangement illustrated in

[0064] As known to the skilled person, a semiconductor die such as 12 can be provided with metallization such as gold of a few nanometers on its bottom (back) face. Such metallization can be created in the die manufacturing with the purpose of having good electrical properties once soldered to a printed circuit board or PCB, a (thick) copper layer can be formed if a ground connection is needed between any point of the metallization and the associated lead frame; after this action, during the package singulation, the ground connection can be removed or broken from the remaining part of the lead frame.

[0065] Figure 2 and Figure 3 Embodiments illustrated in

[0066] Figure 2 and Figure 3 are examples of 100 providing the possibility of a “half-cut” line obtained by laser beam machining of the LDS material (in layer 14). Further, a conductive material (e.g. a metal applied by known processes such as electroplating) can be deposited thereafter, thus facilitating solder inspection.

[0067] These half-cut lines (wettable side) can be created by laser etching the LDS material 14. Individual packages can then be obtained via “singulation”, which can be achieved via conventional tools like saw blades.

[0068] As Figure 5 illustrated, such wettable side can be created via (strong) laser penetration of the laser beam into the LDS material (e.g. etching of about 100 microns).

[0069] As Figure 5By way of example, the thus formed recesses can have (lighter) laser transparent lines 104 (e.g. etched few microns) extending there between.

[0070] Figure 6 By way of example, the above described possible results of the singulation of the semiconductor device produced and discussed above. As described above, the singulation can involve any known singulation method (indicated with arrow S), i.e. Figure 4 the possibility of removing 104 the electroplating, as expected from conventional singulation methods, removes the so-called bus bar connected to the lead frame structure, short-circuiting the leads in the lead frame, e.g. facilitating electroplating growth through an electrolytic process.

[0071] Figure 7 is an example of a possible result of the singulation on one side of the individual semiconductor device. Figure 7 By way of example, also the deposition of a surface conductive material (e.g. metallization via electroplating) on the half-cut (wettable side) 100 is illustrated.

[0072] It is to be understood that, Figure 3 Also can be considered an example of the possibility of performing an LDS process on the back side of the semiconductor chip or die 12, which exploits the thermal conductivity of the conductive areas 26, 26’ produced by the LDS process of the layer 24 of the back side of the semiconductor chip or die 12, to produce a consolidated arrangement of thermally conductive vias and thermally conductive pads suitable for use as heat spreaders and / or to facilitate heat dissipation.

[0073] The methods illustrated herein can comprise:

[0074] providing a support surface (e.g. a tape such as 10);

[0075] arranging at least one semiconductor die (e.g. LED 12) on the above described support surface;

[0076] direct laser shaping a laser direct shaping material (e.g. 14) onto the support surface on which the at least one semiconductor die is arranged;

[0077] laser beam processing the laser direct shaping material (e.g. L) shaped onto the support surface on which the at least one semiconductor die is arranged, providing a conductive structure (e.g. 16) for the at least one semiconductor die arranged on the above described support surface;

[0078] and

[0079] separating the above described at least one semiconductor die provided with the conductive structure from the above described support surface.

[0080] The methods illustrated herein can comprise:

[0081] i) molding another laser direct structuring material (e.g., 18) onto the at least one semiconductor die provided with the aforementioned electrically conductive structure;

[0082] ii) laser beam processing the aforementioned another laser direct structuring material to provide another electrically conductive structure for the at least one semiconductor die.

[0083] ii) laser beam processing the aforementioned another laser direct structuring material to provide another electrically conductive structure for the at least one semiconductor die.

[0084] The methods exemplified herein can include repeating the aforementioned acts i) and ii) to provide a stacked arrangement of multiple layers of electrically conductive structures for the at least one semiconductor die.

[0085] The methods exemplified herein can include, after separating the at least one semiconductor die provided with the aforementioned electrically conductive structure from the aforementioned support surface (e.g., 10):

[0086] molding an additional laser direct structuring material (24) onto the at least one semiconductor die (12) opposite the aforementioned electrically conductive structure; and

[0087] laser beam processing (e.g., electroplating) the aforementioned additional laser direct structuring material to provide an additional electrically conductive structure for the at least one semiconductor die opposite the aforementioned electrically conductive structure.

[0088] laser beam processing (e.g., electroplating) the aforementioned additional laser direct structuring material to provide an additional electrically conductive structure for the at least one semiconductor die opposite the aforementioned electrically conductive structure.

[0089] The methods exemplified herein can include, after separating the at least one semiconductor die provided with the aforementioned electrically conductive structure from the aforementioned support surface (e.g., 10), laser beam processing the laser direct structuring material opposite the aforementioned electrically conductive structure to provide a solder-wettable structure (e.g., 100) therein.

[0090] In the methods exemplified herein, the aforementioned laser beam processing can include:

[0091] applying laser beam energy to provide at least one electrically conductive structure pattern; and

[0092] applying (e.g., electroplating) an electrically conductive material onto the at least one electrically conductive structure pattern.

[0093] The semiconductor devices exemplified herein can include:

[0094] at least one semiconductor die provided with an electrically conductive structure formed according to the aforementioned methods; and

[0095] a package molding material (e.g., an epoxy molding compound exemplified at 28) molded to the at least one semiconductor die to encapsulate the at least one semiconductor die and at least portions of the electrically conductive structure provided thereon.

[0096] One or more embodiments exemplified herein can be practiced in conjunction with solutions for manufacturing semiconductor devices disclosed in Italian patent applications filed on the same day in the name of the same assignee.

[0097] Details and embodiments can vary with respect to what is described by way of example only, even significantly, without departing from the scope of the embodiments, without prejudice to the basic principles.

[0098] The various embodiments described above can be combined to provide further embodiments, which can also be within the scope of the embodiments.

[0099] These and other changes can be made to the embodiments in light of the above- described detailed description. The changes can be made to the embodiments in light of the detailed description and not departing from the scope of the embodiments described above, and the embodiments described in the following detailed description are not to be understood as limiting the claims recited below.

[0100] In the claims, the use of the terms "include", "include", "have", "have", "with", "with" and the like are not intended to exclude the presence of any additional element or step or to exclude additional elements or steps. It is to be understood that the terms "include" and "comprise", and their conjugates, do not exclude the presence of elements or steps other than those listed.

[0101] The specific embodiments disclosed in the specification and drawings and the specific examples given both illustrate and describe the application. The application is not limited to the embodiments described and shown in the specification and drawings, but also includes all alternatives falling within the scope of the application as defined in the claims.

[0102] The application is not limited to the embodiments described and shown in the specification and drawings, but also includes all alternatives falling within the scope of the application as defined in the claims. The claims are not restricted to the embodiments described in the specification and drawings, but include all alternatives falling within the scope of the claims.

[0103] The claims are not restricted to the embodiments described in the specification and drawings, but include all alternatives falling within the scope of the claims.

Claims

1. A method comprising: arranging at least one semiconductor die on a support surface; stencil forming a laser direct formed material onto the support surface on which the at least one semiconductor die is arranged; laser beam processing the laser direct formed material stencil formed onto the support surface on which at least one semiconductor die is arranged to provide an electrically conductive structure for the at least one semiconductor die arranged on the support surface; forming a wettable side extending from a surface of the laser direct formed material opposite the electrically conductive structure partially into the laser direct formed material; and separating the at least one semiconductor die provided with the electrically conductive structure from the support surface; wherein the forming the wettable side is performed after separating the at least one semiconductor die provided with the electrically conductive structure from the support surface, and the forming the wettable side comprises laser beam processing the laser direct formed material opposite the electrically conductive structure to thereby provide the wettable side therein.

2. The method of claim 1 comprising: stencil forming another laser direct formed material onto the at least one semiconductor die provided with the electrically conductive structure; and laser beam processing the another laser direct formed material to provide another electrically conductive structure for the at least one semiconductor die.

3. The method of claim 2 comprising forming a stacked arrangement of multiple layers of electrically conductive structures for the at least one semiconductor die by repeatedly performing stencil forming and laser beam processing of the another laser direct formed material.

4. The method of claim 1 comprising, after separating the at least one semiconductor die provided with the electrically conductive structure from the support surface: stencil forming additional laser direct formed material onto the at least one semiconductor die opposite the electrically conductive structure; and laser beam processing the additional laser direct formed material to provide additional electrically conductive structure for the at least one semiconductor die opposite the electrically conductive structure.

5. The method of claim 1 wherein the laser beam processing comprises: applying laser beam energy to provide at least one electrically conductive structure pattern; and applying an electrically conductive material onto the at least one electrically conductive structure pattern.

6. A semiconductor device comprising: at least one semiconductor die provided with an electrically conductive structure formed according to the method of claim 1; and a package formed material stencil formed onto the at least one semiconductor die, the package formed material encapsulating the at least one semiconductor die and at least a portion of the electrically conductive structure provided thereon.

7. The semiconductor device of claim 6 wherein at least some of the electrically conductive structures extend through the laser direct formed material. ​ ​ ​ ​ 8. The semiconductor device of claim 6, wherein laser beam processing the laser direct structuring material includes forming cavities in the laser direct structuring material, and the electrically conductive structures include electrically conductive material on surfaces of the cavities in the laser direct structuring material.

9. The semiconductor device of claim 6, comprising: a layer of additional laser direct structuring material molded onto the at least one semiconductor die; and second electrically conductive structures on the layer of additional laser direct structuring material.

10. The semiconductor device of claim 9, wherein at least some of the second electrically conductive structures extend through the layer of additional laser direct structuring material.

11. The semiconductor device of claim 9, wherein the electrically conductive structures are separated from the second electrically conductive structures by the at least one semiconductor die.

12. A method comprising: forming a first layer of laser direct structuring material on a surface of a substrate, a plurality of semiconductor dies being located on the surface of the substrate; forming first electrically conductive structures on the first layer of laser direct structuring material by laser beam processing the first layer of laser direct structuring material, the first electrically conductive structures being electrically coupled to the plurality of semiconductor dies; forming a wettable side surface extending partially into the first layer of laser direct structuring material from a surface of the laser direct structuring material opposite the first electrically conductive structures; and separating the plurality of semiconductor dies and the first electrically conductive structures from the surface of the substrate; wherein forming the wettable side surface is performed after separating the plurality of semiconductor dies and the first electrically conductive structures from the surface of the substrate, and the forming the wettable side surface includes laser beam processing the laser direct structuring material opposite the first electrically conductive structures to provide the wettable side surface therein.

13. The method of claim 12, wherein the substrate is a support tape.

14. The method of claim 12, wherein forming the first layer of laser direct structuring material comprises: forming the first layer of laser direct structuring material between adjacent dies of the plurality of semiconductor dies.

15. The method of claim 12, wherein forming the first electrically conductive structures includes: forming a plurality of cavities in the first layer of laser direct structuring material by the laser beam processing; and forming an electrically conductive layer on surfaces of the laser direct structuring material in the plurality of cavities.

16. The method of claim 12, wherein the first electrically conductive structures include electrically conductive vias.

17. The method of claim 12, further comprising: forming a second layer of laser direct structuring material on the first layer of laser direct structuring material and on the plurality of semiconductor dies; forming second electrically conductive structures on the second layer of laser direct structuring material by laser beam processing the second layer of laser direct structuring material, the second electrically conductive structures being electrically coupled to the plurality of semiconductor dies.

18. The method of claim 17, wherein forming the second conductive structure comprises: forming the second electrically conductive structures to extend completely through the second layer of laser direct structuring material.

19. The method of claim 12, further comprising: forming a second layer of laser direct structuring material on a surface of the substrate opposite the first layer of laser direct structuring material; and forming a second conductive structure on the second layer of laser direct structuring material by laser beam processing the second layer of laser direct structuring material, the second conductive structure electrically coupled to the plurality of semiconductor dies.

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