Edge ring, plasma processing device and method for manufacturing edge ring

Abstract

The present invention provides an edge ring, a plasma processing device, and a method for manufacturing an edge ring. The edge ring of the present invention surrounds a substrate placed on a mounting table inside a processing container of a plasma processing device, and the edge ring includes: a first component having a contact surface capable of contacting plasma generated inside the processing container and formed of a first material; and a second component, which is arranged on the side of the first component opposite to the contact surface and is formed of a second material different from the first material, and the Young's modulus of the first material is higher than that of the second material. The present invention can suppress the consumption of the edge ring and reduce the leakage of heat transfer gas from between the edge ring and the electrostatic chuck.

Description

Technical Field

[0001] The invention relates to an edge ring, a plasma processing device and a method for manufacturing the edge ring. Background Art

[0002] An edge ring is provided around a substrate placed on an electrostatic chuck in a processing chamber of a plasma processing device, and is used to gather plasma generated in the processing chamber above the substrate, thereby improving the efficiency of plasma processing on the substrate.

[0003] In recent years, in order to extend the life of the edge ring, a material having higher rigidity than silicon (Si), such as silicon carbide (SiC), is sometimes used as the material of the edge ring.

[0004] A heat transfer gas such as He (helium) is supplied to the lower surface of an edge ring disposed on the outer peripheral side of an electrostatic chuck, thereby controlling the temperature of the edge ring. For example, Patent Document 1 proposes a technology for electrostatically adsorbing a focus ring when a wafer is transferred in and out and when performing wafer-less dry cleaning (WLDC) in order to suppress an increase in the amount of heat transfer gas supplied leaking from a gap between the edge ring and the electrostatic chuck (leakage amount).

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2016-122740

[0008] Patent Document 2: Japanese Patent Application Publication No. 2016-225588 Summary of the invention

[0009] Technical problem to be solved by the invention

[0010] The upper surface of the edge ring is exposed to plasma and is consumed. When the edge ring is consumed by a predetermined amount or more, etching characteristics and the like may be affected, and thus the edge ring needs to be replaced.

[0011] The present invention provides an edge ring which can suppress the consumption of the edge ring and reduce the leakage of heat transfer gas between the edge ring and the electrostatic chuck.

[0012] Technical solutions for solving technical problems

[0013] According to one embodiment of the present invention, there is provided an edge ring which surrounds a substrate placed on a mounting table inside a processing container of a plasma processing device, the edge ring comprising: a first component which has a contact surface capable of contacting plasma generated inside the processing container and is formed of a first material; and a second component which is arranged on a side of the first component opposite to the contact surface and is formed of a second material different from the first material, the Young's modulus of the first material being higher than that of the second material.

[0014] Effects of the Invention

[0015] According to one aspect, an edge ring can be provided that can suppress consumption of the edge ring and reduce leakage of a heat transfer gas between the edge ring and an electrostatic chuck. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment.

[0017] Figure 2 This is a diagram showing an example of an edge ring according to an embodiment.

[0018] Figure 3 This is a diagram showing an example of a cross section of an edge ring according to Modifications 1 to 5 of one embodiment.

[0019] Figure 4 This is a diagram showing an example of an edge ring according to a sixth modification of an embodiment.

[0020] Figure 5 1 is a flow chart showing a method for manufacturing an edge ring with an intermediate component according to one embodiment.

[0021] Figure 6 It is a diagram for explaining a method for manufacturing an edge ring having an intermediate member according to one embodiment.

[0022] Description of Reference Numerals

[0023] 1 Plasma treatment device

[0024] 10. Disposal Container

[0025] 14 Loading table

[0026] 16 Electrode Plate

[0027] 18 Base

[0028] 20 Electrostatic chuck

[0029] 25 Edge Ring

[0030] 25a Upper part

[0031] 25b Lower part

[0032] 25c Intermediate part

[0033] 30 Upper electrode

[0034] 34 Top Plate

[0035] 36 Support

[0036] 38 Gas supply pipe

[0037] 40 Gas source set

[0038] 42 valve group

[0039] 44 Flow Controller Group

[0040] 46 shielding parts

[0041] 48 Baffle

[0042] 70 Power Supply

[0043] 80 Control Department

[0044] W substrate. DETAILED DESCRIPTION

[0045] Hereinafter, the mode for carrying out the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0046] [Plasma processing device]

[0047] use Figure 1 , a plasma processing apparatus 1 according to an embodiment will be described. Figure 1 It is a schematic cross-sectional view showing an example of a plasma processing apparatus 1 according to an embodiment.

[0048] The plasma processing device 1 includes a processing container 10. The processing container 10 provides an internal space 10s therein. The processing container 10 includes a processing container body 12. The processing container body 12 has a substantially cylindrical shape. The processing container body 12 is formed of, for example, aluminum. A corrosion-resistant film is provided on the inner wall surface of the processing container body 12. The film may be ceramics such as aluminum oxide and yttrium oxide.

[0049] A passage 12p is formed in the side wall of the processing container body 12. The substrate W is transported between the internal space 10s and the outside of the processing container 10 through the passage 12p. The passage 12p is opened and closed by a gate valve 12g provided along the side wall of the processing container body 12.

[0050] A support portion 13 is provided on the bottom of the processing container body 12. The support portion 13 is formed of an insulating material. The support portion 13 has a substantially cylindrical shape. The support portion 13 extends upward from the bottom of the processing container body 12 in the internal space 10s. The support portion 13 has a mounting table 14 at the upper portion. The mounting table 14 is configured to support the substrate W in the internal space 10s.

[0051] The mounting platform 14 includes a base 18 and an electrostatic chuck 20. The mounting platform 14 may further include an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a substantially disc shape. The base 18 is disposed on the electrode plate 16. The base 18 is formed of a conductor such as aluminum and has a substantially disc shape. The base 18 is electrically connected to the electrode plate 16.

[0052] The electrostatic chuck 20 is disposed on the base 18. The substrate W is placed on the upper surface of the electrostatic chuck 20. The electrostatic chuck 20 includes a main body and an electrode. The main body of the electrostatic chuck 20 has a substantially disc shape and is formed of a dielectric. The electrode of the electrostatic chuck 20 is a film-shaped electrode and is disposed in the main body of the electrostatic chuck 20. The electrode of the electrostatic chuck 20 is connected to a DC power supply 20p via a switch 20s. When a voltage is applied to the electrode of the electrostatic chuck 20 from the DC power supply 20p, an electrostatic attraction is generated between the electrostatic chuck 20 and the substrate W. The substrate W is held on the electrostatic chuck 20 by this electrostatic attraction.

[0053] An edge ring 25 is disposed on the periphery of the susceptor 18 so as to surround the periphery of the substrate W. The edge ring 25 is also called a focus ring. The edge ring 25 is used to improve the in-plane uniformity of the plasma treatment performed on the substrate W.

[0054] A flow path 18f is provided inside the susceptor 18. A heat exchange medium (such as a refrigerant or a heat medium) for temperature adjustment is supplied to the flow path 18f from a cooling unit (not shown) provided outside the processing container 10 through a pipe 22a. The heat exchange medium supplied to the flow path 18f is returned to the cooling unit through a pipe 22b. The temperature of the substrate W placed on the electrostatic chuck 20 can be adjusted by heat exchange between the heat exchange medium and the susceptor 18.

[0055] The plasma processing apparatus 1 is provided with a gas supply passage 24. The gas supply passage 24 supplies a heat transfer gas (eg, He gas) from a heat transfer gas supply mechanism to a position between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W.

[0056] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table 14 so as to face the mounting table 14. The upper electrode 30 is supported by a component 32 on the upper portion of the processing container body 12. The component 32 is formed of an insulating material. The upper electrode 30 and the component 32 close the upper opening of the processing container body 12.

[0057] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is the lower surface on one side of the internal space 10s, and defines the boundary of the internal space 10s. The top plate 34 may be formed of a conductor or semiconductor with low resistance that generates less Joule heat. The top plate 34 has a plurality of gas release holes 34a that penetrate the top plate 34 in the thickness direction thereof.

[0058] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support body 36. The support body 36 has a plurality of pores 36b extending downward from the gas diffusion chamber 36a. The plurality of pores 36b are respectively connected to the plurality of gas release holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0059] The gas supply pipe 38 is connected with a valve group 42, a flow controller group 44 and a gas source group 40. The gas source group 40, the valve group 42 and the flow controller group 44 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of on-off valves. The flow controller group 44 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 44 are each a mass flow controller or a pressure-controlled flow controller. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via the corresponding on-off valves in the valve group 42 and the corresponding flow controllers in the flow controller group 44.

[0060] In the plasma processing apparatus 1, a shielding member 46 is detachably provided along the inner wall surface of the processing container body 12 and the outer periphery of the support portion 13. The shielding member 46 prevents the reaction byproducts from adhering to the processing container body 12. The shielding member 46 is formed by forming a corrosion-resistant film on the surface of a base material formed of aluminum, for example. The corrosion-resistant film can be formed of ceramics such as yttrium oxide.

[0061] A baffle 48 is provided between the support portion 13 and the side wall of the processing container body 12. The baffle 48 is formed by, for example, forming a corrosion-resistant film (a film of yttrium oxide, etc.) on the surface of a base material formed of aluminum. A plurality of through holes are formed in the baffle 48. An exhaust port 12e is provided below the baffle 48 and at the bottom of the processing container body 12. The exhaust port 12e is connected to an exhaust device 50 via an exhaust pipe 52. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0062] The plasma processing device 1 includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply for generating a first high-frequency electric power (hereinafter also referred to as "HF electric power or HF power"). The first high-frequency electric power has a frequency suitable for generating plasma. The frequency of the first high-frequency electric power is, for example, a frequency in the range of 27 MHz to 100 MHz. The first high-frequency power supply 62 is connected to the base 18 via a matcher 66 and an electrode plate 16. The matcher 66 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the impedance of the load side (the side of the base 18). In addition, the first high-frequency power supply 62 can also be connected to the upper electrode 30 via the matcher 66. The first high-frequency power supply 62 constitutes an example of a plasma generating unit.

[0063] The second high-frequency power supply 64 is a power supply for generating a second high-frequency power (hereinafter also referred to as "LF power or LF power"). The frequency of the second high-frequency power is lower than the frequency of the first high-frequency power. When the second high-frequency power is used together with the first high-frequency power, the second high-frequency power is used as a high-frequency power for bias voltage to attract ions to the substrate W. The frequency of the second high-frequency power is, for example, a frequency in the range of 400kHz to 13.56MHz. The second high-frequency power supply 64 is connected to the base 18 via a matcher 68 and an electrode plate 16. The matcher 68 has a circuit for matching the output impedance of the second high-frequency power supply 64 with the impedance of the load side (the side of the base 18).

[0064] In addition, the second high-frequency power may be used instead of the first high-frequency power, that is, only one high-frequency power may be used to generate plasma. In this case, the frequency of the second high-frequency power may be a frequency greater than 13.56 MHz, for example, 40 MHz. In this case, the plasma processing device 1 may not include the first high-frequency power supply 62 and the matching device 66. The second high-frequency power supply 64 constitutes an example of a plasma generating unit.

[0065] In the plasma processing apparatus 1, gas is supplied from the gas supply unit to the internal space 10s to generate plasma. Then, a high frequency electric field is generated between the upper electrode 30 and the susceptor 18 by supplying the first high frequency power and / or the second high frequency power. Plasma is generated by the generated high frequency electric field.

[0066] The plasma processing apparatus 1 includes a power supply 70. The power supply 70 is connected to the upper electrode 30. The power supply 70 applies a voltage to the upper electrode 30, and the voltage is used to attract positive ions existing in the internal space 10s to the top plate 34.

[0067] The plasma processing device 1 may further include a control unit 80. The control unit 80 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input and output interface, and the like. The control unit 80 controls various parts of the plasma processing device 1. Using the control unit 80, an operator can use the input device to input instructions to manage the plasma processing device 1. In addition, the control unit 80 can use the display device to visually display the operating status of the plasma processing device 1. In addition, a control program and scheme data are stored in the storage unit. The control program is executed by the processor to perform various processes in the plasma processing device 1. The processor executes the control program to control various parts of the plasma processing device 1 according to the scheme data.

[0068] [Edge Ring]

[0069] Below, refer to Figure 2 , an edge ring 25 according to one embodiment will be described. Figure 2 This is a diagram showing an example of the edge ring 25 according to one embodiment. Figure 2 (a) is a diagram of an edge ring 25 according to an embodiment as viewed from the upper surface. Figure 2 (b) means Figure 2 (a) AA section view.

[0070] like Figure 2 As shown in FIG. 2( a ), the edge ring 25 is formed in a ring shape so as to surround the substrate W. When the edge ring 25 is disposed on the electrostatic chuck 20 , the upper surface 25 a 1 of the edge ring 25 is a surface that can contact the plasma generated in the processing chamber 10 .

[0071] like Figure 2 As shown in (b), the edge ring 25 has a structure in which an upper part 25a and a lower part 25b are joined. The upper part 25a is formed of silicon carbide (SiC). The lower part 25b is formed of silicon (Si). The lower part 25b is arranged on the side of the upper part 25a opposite to the upper surface 25a1, that is, the side of the edge ring 25 that does not contact the plasma.

[0072] The upper surface 25a1 of the upper member 25a is a surface in contact with plasma, and thus is exposed to plasma and is consumed. The edge ring 25 consumed by a predetermined amount or more affects the etching characteristics and the processing of the substrate W, and therefore must be replaced. Therefore, it is preferable to select a material forming the edge ring 25 so as to suppress the consumption of the edge ring 25 and postpone the replacement time of the edge ring 25.

[0073] Therefore, as a member capable of suppressing consumption when exposed to plasma, the upper member 25a is formed using silicon carbide which is harder than silicon. The hardness of a material can be expressed by Young's modulus, for example.

[0074] For example, the material of the upper member 25a exposed to plasma (hereinafter also referred to as the "first material") is a material having a higher Young's modulus than the lower member 25b. On the other hand, the lower member 25b is provided on the side not in contact with the plasma and is not exposed to the plasma, so the material of the lower member 25b (hereinafter also referred to as the "second material") can be a material having a lower Young's modulus than the upper member 25a.

[0075] The Young's modulus of silicon is 1.30×10 11 (Pa), the Young's modulus of silicon carbide is 4.30×10 11 (Pa). The Young's modulus of silicon carbide is higher than that of silicon. As described above, it can be said that silicon carbide is harder than silicon.

[0076] Therefore, the edge ring 25 of this embodiment can suppress consumption by forming the upper member 25 a that contacts plasma with silicon carbide, compared with the case where the upper member 25 a is formed of silicon. This can extend the life of the edge ring 25 and postpone the replacement time of the edge ring 25.

[0077] On the contrary, lower member 25b is made of a material softer than upper member 25a. The reason for this is that, since silicon carbide is harder than silicon, if lower member 25b is made of silicon carbide, when edge ring 25 is adsorbed to electrostatic chuck 20, the adsorption of edge ring 25 is poorer than when lower member 25b is made of silicon. As a result, heat transfer gas leaks from between edge ring 25 and electrostatic chuck 20. In contrast, by forming lower member 25b with silicon, the leakage of heat transfer gas from between edge ring 25 and electrostatic chuck 20 can be eliminated.

[0078] As described above, the edge ring 25 of the present embodiment has a structure in which the upper part 25a and the lower part 25b are joined, and the first material constituting the upper part 25a is a material having a higher Young's modulus than the second material constituting the lower part 25b. Thus, the consumption of the edge ring 25 can be suppressed, and the leakage of the heat transfer gas from the edge ring 25 and the electrostatic chuck 20 can be reduced.

[0079] In addition, the upper member 25a is an example of a first member formed of a first material, and the first member has a contact surface capable of contacting the plasma generated inside the processing container 10. The lower member 25b is an example of a second member formed of a second material having a lower Young's modulus than the first material, and the second member is provided on the side of the first member opposite to the contact surface.

[0080] Silicon carbide is an example of the first material, and silicon is an example of the second material. When the second material is silicon, since the Young's modulus of silicon is 1.30×1011 (Pa), so the first material only needs to have a ratio of 1.30×10 11 The first material is preferably SiC, which has a Young's modulus higher than that of silicon. However, the first material may also be silicon oxide (SiO2) or aluminum oxide (Al2O3), which has a Young's modulus higher than that of silicon, depending on the etching target.

[0081] [Joining method]

[0082] As a method for joining the upper member 25a and the lower member 25b, one example is fusion joining, that is, a method of joining the upper member 25a and the lower member 25b by melting the surfaces of the upper member 25a and the lower member 25b by heating.

[0083] For example, when the upper member 25a is formed of silicon carbide and the lower member 25b is formed of silicon, since different materials such as silicon carbide and silicon are bonded together, stress is applied to the bonding surface when the edge ring 25 is used. Specifically, since the linear thermal expansion coefficients of silicon carbide and silicon are different, when the edge ring 25 is used, the upper member 25a and the lower member 25b repeatedly expand and contract due to heat supplied by plasma, etc., and friction is generated on the bonding surface between the upper member 25a and the lower member 25b. As a result, there is a concern that damage such as cracks and fissures (hereinafter also referred to as "fractures") may occur on the bonding surface between the upper member 25a and the lower member 25b.

[0084] [Intermediate member (modification)]

[0085] Therefore, in order to avoid fracture at the joint surface between the upper member 25a and the lower member 25b, it is preferable to provide an intermediate member between the upper member 25a and the lower member 25b. Figure 3 This is a diagram showing an example of a cross section of an edge ring 25 according to Modifications 1 to 5 of one embodiment. Figure 3 In the edge ring 25 of the modification 1 of one embodiment shown in (a), an intermediate member 25c is provided between an upper member 25a and a lower member 25b.

[0086] The Young's modulus of the material constituting the intermediate component 25c may be less than the Young's modulus of the first material constituting the upper component 25a, and greater than the Young's modulus of the second material constituting the lower component 25b. Thus, the friction force exerted on the joint surface of the upper component 25a and the lower component 25b by the expansion and contraction caused by heat can be alleviated by the intermediate component 25c. Thus, the joint surface of the edge ring 25 can be prevented from being broken.

[0087] For example, when the upper component 25a is formed of silicon carbide and the lower component 25b is formed of silicon, the intermediate component 25c may be formed of a material obtained by mixing silicon carbide and silicon at a predetermined ratio. In addition, the intermediate component 25c may also be a composition gradient change layer in which the mixing ratio of silicon carbide constituting the upper component 25a and silicon constituting the lower component 25b is changed in the thickness direction. As an example of a composition gradient change layer, the following example can be cited: when the upper component 25a is formed of silicon carbide and the lower component 25b is formed of silicon, the closer to the bonding surface with the upper component 25a, the higher the mixing ratio of silicon carbide to silicon in the intermediate component 25c. In this case, the closer to the bonding surface with the lower component 25b, the higher the mixing ratio of silicon to silicon carbide in the intermediate component 25c. As a result, the friction force applied to the bonding surface of the upper component 25a and the lower component 25b by expansion and contraction caused by heat can be alleviated by the intermediate component 25c, and the bonding surface of the edge ring 25 can be effectively prevented from being broken.

[0088] The intermediate component 25c can be composed of a film whose composition changes discontinuously, or it can be composed of a film whose composition changes continuously. As an example of the intermediate component 25c composed of a film whose composition changes discontinuously, a case where a plurality of plate-like components are joined to form the intermediate component 25c can be cited. The plurality of plate-like components are formed of materials with different compositions, and the closer the plate-like components are to the joining surface with the upper component 25a, the higher the mixing ratio of the first material (silicon carbide) of the upper component 25a to the second material (silicon) of the lower component 25b. And the closer to the joining surface with the lower component 25b, the lower the mixing ratio of the first material to the second material. Thus, the intermediate component 25c can be used to more effectively alleviate the friction force applied to the joining surface of the upper component 25a and the lower component 25b by expansion and contraction caused by heat.

[0089] The intermediate member 25c and the edge ring 25 composed of a film whose composition changes continuously can be manufactured using a 3D printer, for example. In this case, in the intermediate member 25c, the closer to the joint surface with the upper member 25a, the higher the mixing ratio of the first material (silicon carbide) of the upper member 25a to the second material (silicon) of the lower member 25b. On the other hand, the closer to the joint surface with the lower member 25b, the lower the mixing ratio of the first material to the second material.

[0090] However, the manufacturing method of the intermediate component 25c and the edge ring 25 is not limited to the 3D printer. For example, the intermediate component 25c and the edge ring 25 can also be manufactured using a sputtering device. In this case, a target of a first material and a target of a second material are prepared, and by changing the high-frequency power applied to each target, the ratio of the first material to the second material can be controlled to form a film. For example, at a certain time, the ratio of silicon carbide to silicon is increased by making the high-frequency power applied to the target of silicon carbide higher than the high-frequency power applied to the target of silicon. At the next time, the ratio of silicon carbide to silicon is made 5:5 by making the high-frequency power applied to the target of silicon carbide the same as the high-frequency power applied to the target of silicon. At the next time, the ratio of silicon carbide to silicon is increased by making the high-frequency power applied to the target of silicon carbide higher than the high-frequency power applied to the target of silicon carbide. In this way, by controlling the high-frequency power applied to the target of the first material and the target of the second material, the composition of the intermediate component 25c can be controlled.

[0091] In addition, for example, the intermediate component 25c can also be manufactured using a CVD (Chemical Vapor Deposition) device. In this case, by changing the gas flow ratio between the gas used to form a film of the first material and the gas used to form a film of the second material, the intermediate component 25c can be manufactured into a composition gradient layer.

[0092] The intermediate component 25c preferably has a composition that changes continuously. However, the composition may also change discontinuously. In addition, the intermediate component 25c is not limited to a composition gradient change layer in which the composition changes continuously or discontinuously, and may also be formed of a material of the same composition. For example, the intermediate component 25c may be formed of any material of silicon carbide and silicon. The intermediate component 25c may also be formed of other materials other than silicon carbide and silicon, which have a Young's modulus lower than that of silicon carbide and higher than that of silicon.

[0093] By joining the upper member 25a and the lower member 25b of the edge ring 25 via the intermediate member 25c, the edge ring 25 can be structured to be less likely to break, and the adhesion between the upper member 25a and the lower member 25b can be improved.

[0094] [Other Modifications]

[0095] Next, Figure 3 The edge ring 25 of Modifications 2 to 5 of one embodiment shown in (b) to (e) will be described. Figure 3 In the edge ring 25 of the modification examples 2 and 3 of one embodiment shown in (b) and (c), no intermediate member 25c is provided between the upper member 25a and the lower member 25b. Figure 3In the edge ring 25 of the modification examples 4 and 5 of one embodiment shown in (d) and (e), an intermediate member 25c is provided between the upper member 25a and the lower member 25b.

[0096] exist Figure 3 In the edge ring 25 of the second modification shown in (b), the upper component 25a and the lower component 25b are directly bonded, and the side surface of the outer peripheral side (the side opposite to the substrate) of the lower component 25b is covered by the upper component 25a and is not exposed to the outside.

[0097] exist Figure 3 In the edge ring 25 of the third modification shown in (c), the upper component 25a and the lower component 25b are directly joined, and both the outer peripheral side and the inner peripheral side of the lower component 25b are covered by the upper component 25a and are not exposed to the outside.

[0098] exist Figure 3 In the edge ring 25 of the modification 4 shown in (d), the upper component 25a and the lower component 25b are joined via the intermediate component 25c, and the outer peripheral side surfaces of the intermediate component 25c and the lower component 25b are covered by the upper component 25a and are not exposed to the outside.

[0099] exist Figure 3 In the edge ring 25 of the modification 5 shown in (e), the upper component 25a and the lower component 25b are joined via the intermediate component 25c, and the outer and inner peripheral sides of the intermediate component 25c and the lower component 25b are covered by the upper component 25a and are not exposed to the outside.

[0100] The edge ring 25 shown in Modifications 2 to 5 adopts a structure in which the lower component 25b and the middle component 25c are not exposed to the outside on the outer side or both side surfaces. Therefore, the bonding surface (joining portion) of each component is covered by the upper component 25a on the outer side or both side surfaces and is not exposed to the plasma spreading to the side surface of the edge ring 25. This can suppress the consumption of the bonding layer between the components. In addition, a structure can also be adopted in which the side surface on the inner peripheral side of the lower component 25b or the side surface on the inner peripheral side of the lower component 25b and the middle component 25c is covered by the upper component 25a and is not exposed to the outside.

[0101] In particular, in the case where the middle part 25c of the edge ring 25 of one embodiment and variants 1 to 5 is configured as a composition gradient change layer, it is preferably manufactured using any one of 3D printing technology, additive manufacturing technology, a sputtering device, and a CVD device. Specifically, when using 3D printing technology and additive manufacturing technology, a stacking modeling technology using silicon and silicon carbide materials can be applied. For example, a modeling technology can be used in which powders of silicon and silicon carbide materials are irradiated with a laser or an electron beam to sinter them for modeling. In addition, a modeling technology can be used in which powders or wires of silicon and silicon carbide materials are supplied while the materials are melted and deposited using a laser or an electron beam for modeling. In addition, these modeling methods are only examples and are not limited to these.

[0102] Next, Figure 4 The edge ring 25 of Modification 6 of the illustrated embodiment will be described. Figure 4 (a) is a diagram of the edge ring 25 of Modification 6 as viewed from the bottom surface. Figure 4 (b) means Figure 4 (a) BB cross section diagram.

[0103] In the edge ring 25 of the modification example 6, no intermediate member 25c is provided between the upper member 25a and the lower member 25b. The upper member 25a of the edge ring 25 of the modification example 6 is formed as a whole. The lower member 25b is divided into a plurality of components 25b1 in the circumferential direction. The number of components 25b1 may be 2 or more. The components 25b1 are of the same shape and are evenly arranged in the circumferential direction.

[0104] Thus, the lower part 25b is divided into a plurality of components 25b1, and grooves are formed between the components 25b1. Thus, when joining or using, deformation caused by the difference in thermal expansion coefficient between the upper part 25a and the lower part 25b can be suppressed from being concentrated locally on the lower part 25b, and the possibility of breakage can be further reduced.

[0105] However, when dividing the lower part 25b into a plurality of components 25b1, it is important to form dividing grooves, etc. in a manner that satisfies the following conditions: the division will not affect the back adsorption of the edge ring 25 and will not affect the back cooling due to leakage of the heat transfer gas, or such effects can be suppressed to a minimum.

[0106] In addition, regarding the edge ring 25 of Modification 6, an intermediate member 25c may be provided between the upper member 25a and the lower member 25b. In addition, the outer peripheral side or both side surfaces of the lower member 25b may be covered by the upper member 25a.

[0107] [Method for manufacturing edge ring]

[0108] Below, refer to Figure 5 and Figure 6 , a method for manufacturing the edge ring 25 having the intermediate member 25 c in the edge ring 25 according to one embodiment and a modified example is described. Figure 5 1 is a flowchart showing a method for manufacturing the edge ring 25 having the intermediate member 25 c according to one embodiment. Figure 6 1 is a diagram for explaining a method for manufacturing an edge ring 25 having an intermediate member 25c according to an embodiment. The following is an example of a method for manufacturing an edge ring 25 having an intermediate member 25c, but the present invention is not limited thereto.

[0109] In this process, in step S1, the upper member 25a, the lower member 25b, and a plurality of plate-like members of intermediate members having different compositions are prepared. Figure 6 In the example of (a), an upper member 25a, a plurality of intermediate members 25c1, 25c2, 25c3 and a lower member 25b having the same ring shape are prepared. The intermediate members 25c1, 25c2, 25c3 are also collectively referred to as intermediate members 25c.

[0110] When the upper component 25a is made of silicon carbide and the lower component 25b is made of silicon, the intermediate component 25c1 is formed with a ratio of silicon carbide to silicon being higher than that of the other intermediate components 25c2 and 25c3. The intermediate component 25c3 is formed with a ratio of silicon to silicon carbide being higher than that of the other intermediate components 25c1 and 25c2. The ratio of silicon carbide to silicon in the intermediate component 25c2 is preferably lower than that in the intermediate component 25c1 and higher than that in the intermediate component 25c3.

[0111] By bonding the intermediate members 25c1 to 25c3 having different compositions, a composition gradient layer can be formed in which the mixing ratio of silicon carbide to silicon increases toward the upper member 25a and decreases toward the lower member 25b.

[0112] Back to Figure 5 Then, in step S2, the lower part 25b, the middle part 25c3, the middle part 25c2, the middle part 25c1, and the upper part 25a are overlapped in this order. Figure 6 As shown in (b), all components overlap one after another.

[0113] Back to Figure 5 Then, in step S3, all the overlapping parts are melted and joined, and the process ends. Thus, the surface of each part is melted and joined with the adjacent parts. Figure 6 As shown in (c), all components are melt-bonded to produce an edge ring 25.

[0114] The manufactured edge ring 25 may be deformed in shape after the fusion bonding. In this case, the upper and lower surfaces of the edge ring 25 are cut and processed to be flat.

[0115] The manufacturing method of the edge ring 25 described above is only an example and is not limited thereto. For example, the intermediate components 25c1 to 25c3 may be first melt-joined to form an integral body, and then the intermediate component 25c may be sandwiched between the upper component 25a and the lower component 25b and melt-joined in this state.

[0116] When the edge ring 25 is manufactured using a sputtering device or a CVD device, the upper component 25a (lower component 25b) may be formed first, the intermediate components 25c1 to 25c3 may be formed in sequence, and then the lower component 25b (upper component 25a) may be melt-bonded.

[0117] As described above, according to the edge ring 25 , the plasma processing apparatus 1 , and the method for manufacturing the edge ring of the present embodiment, it is possible to suppress consumption of the edge ring 25 and reduce leakage of the heat transfer gas between the edge ring 25 and the electrostatic chuck 20 .

[0118] The edge ring, plasma processing device and edge ring manufacturing method of one embodiment disclosed in the present invention are illustrative in all aspects and should not be considered as restrictive. The above-mentioned embodiments can be modified and improved in various ways without departing from the scope of the attached claims and their ideas. The contents described in the above-mentioned multiple embodiments can adopt other structures within the scope of no contradiction, or can be combined with each other within the scope of no contradiction.

[0119] For example, impurities such as nitrogen may be doped into the edge ring 25 and the first component and / or the second component at a level that does not affect processes such as etching. Polycrystalline silicon may also be used as the second material. This method can also reduce breakage during bonding or use. Amorphous silicon may also be used as the second material. This method can also further reduce breakage during bonding or use.

[0120] The plasma processing device of the present invention can be applied to any type of device including Atomic Layer Deposition (ALD: atomic layer deposition) device, Capacitively Coupled Plasma (CCP: capacitively coupled plasma), Inductively Coupled Plasma (ICP: inductively coupled plasma), Radial Line Slot Antenna (RLSA: radial line slot antenna), Electron Cyclotron Resonance Plasma (ECR: electron cyclotron resonance plasma), and HeliconWave Plasma (HWP: helicon wave plasma).

Claims

1. An edge ring, which surrounds a substrate placed on a mounting table in a processing container of a plasma processing device, wherein the edge ring comprises: A first edge ring, the upper surface of which is a contact surface capable of contacting plasma generated inside the processing container, and is formed integrally of silicon carbide; and a second edge ring, the upper surface of which is bonded to the side of the first edge ring opposite to the contact surface, the lower surface of which is in contact with the electrostatic chuck, and is formed of silicon, The second edge ring is divided into a plurality of components in the circumferential direction, and grooves are formed between each of the plurality of components so that adjacent components have a predetermined distance in the circumferential direction. The groove is formed by the side surface of the second edge ring adjacent to the component and the bottom surface of the first edge ring as the top surface in longitudinal section.

2. The edge ring according to claim 1, characterized in that: The first edge ring covers sides of the second edge ring.

3. The edge ring according to claim 2, characterized in that: The first edge ring covers a side surface on an outer peripheral side of the second edge ring.

4. The edge ring according to claim 2 or 3, characterized in that: The first edge ring covers a side surface on the inner peripheral side of the second edge ring.

5. An edge ring, which surrounds a substrate placed on a mounting table in a processing container of a plasma processing device, wherein the edge ring comprises: A first edge ring, the upper surface of which is a contact surface capable of contacting plasma generated inside the processing container, and is formed integrally of silicon carbide; a second edge ring, the upper surface of which is bonded to the side of the first edge ring opposite to the contact surface, and is formed of a material in which silicon carbide and silicon are mixed in a predetermined ratio; and a third edge ring, whose upper surface is bonded to the side of the second edge ring opposite to the contact surface and whose lower surface is in contact with the electrostatic chuck, and is formed of silicon, The third edge ring is divided into a plurality of components in the circumferential direction, and grooves are formed between each of the plurality of components so that adjacent components have a predetermined distance in the circumferential direction. The groove is formed by the side surfaces of the third edge ring adjacent to the component and the bottom surface of the second edge ring as the top surface in longitudinal section.

6. The edge ring according to claim 5, characterized in that: The second edge ring is formed of a material in which silicon carbide and silicon are mixed in a discontinuously changing ratio.

7. The edge ring according to claim 5, characterized in that: The second edge ring is formed of a material in which silicon carbide and silicon are mixed in a continuously changing ratio.

8. The edge ring according to any one of claims 5 to 7, characterized in that: The first edge ring covers a side surface of the second edge ring, The second edge ring covers sides of the third edge ring.

9. The edge ring of claim 8, wherein: The first edge ring covers the side surface of the outer peripheral side of the second edge ring, The second edge ring covers a side surface on an outer peripheral side of the third edge ring.

10. The edge ring of claim 8, wherein: The first edge ring covers the side surface of the inner circumference of the second edge ring, The second edge ring covers a side surface on the inner peripheral side of the third edge ring.

11. A plasma processing apparatus, comprising: Handling containers; a mounting table disposed inside the processing container for mounting a substrate; and an edge ring surrounding the substrate placed on the mounting table, The plasma processing device is characterized in that: The edge ring comprises: A first edge ring, the upper surface of which is a contact surface capable of contacting plasma generated inside the processing container, and is formed integrally of silicon carbide; and a second edge ring, the upper surface of which is bonded to the side of the first edge ring opposite to the contact surface, the lower surface of which is in contact with the electrostatic chuck, and is formed of silicon, The second edge ring is divided into a plurality of components in the circumferential direction, and grooves are formed between each of the plurality of components so that adjacent components have a predetermined distance in the circumferential direction. The groove is formed by the side surface of the second edge ring adjacent to the component and the bottom surface of the first edge ring as the top surface in longitudinal section.

12. A method for manufacturing an edge ring, wherein the edge ring surrounds a substrate mounted on a mounting table in a processing container of a plasma processing device, the method comprising: For a first edge ring integrally formed of silicon carbide, a second edge ring formed of a material in which silicon carbide and silicon are mixed at a predetermined ratio, and a third edge ring formed of silicon, a step of sandwiching the second edge ring between the first edge ring and the third edge ring, wherein the upper surface of the first edge ring is a contact surface capable of contacting plasma generated inside the processing container, the upper surface of the second edge ring is arranged on the side of the first edge ring opposite to the contact surface, the upper surface of the third edge ring is arranged on the lower surface of the second edge ring and the lower surface is in contact with the electrostatic chuck, and the third edge ring is divided into a plurality of components in the circumferential direction, grooves are formed between each of the plurality of components in a manner that adjacent components have a predetermined distance in the circumferential direction, and the grooves are formed by side surfaces of adjacent components of the third edge ring and a bottom surface of the second edge ring as a top surface when viewed in longitudinal section; and The step of joining the first edge ring, the second edge ring, and the third edge ring in a state where the second edge ring is sandwiched between the first edge ring and the third edge ring and the groove is formed between the plurality of members.

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