Gas distributors and flow calibrators

Abstract

An apparatus and method for distributing and mixing gases are provided. In one example, a gas distributor comprises: a body, a gas inlet for allowing gas to enter the body, a gas outlet for distributing the gas to a track array of an external component, and a central gas distribution point disposed in the body at the center of the gas outlet of the track array and in fluid communication with the gas outlet of the track array.

Description

[0001] Priority claim

[0002] This application claims priority to U.S. Patent Application No. 16 / 040,1326, filed on July 19, 2018 by Taskar et al., and entitled “Gas Distributor and Flow Verifier,” the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The present disclosure relates generally to gas distributors and flow verifiers and, in one example, to an orbital gas distributor or flow splitter having an orbital array of gas outlets, nozzles, or orifices disposed about a central gas distribution point. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] A typical plasma etching apparatus includes a reactor in which there is a chamber through which one or more reactive gases flow. In semiconductor processing, the uniformity of the etch or deposition rate across the wafer during the etching process directly affects the device yield. Uniformity has become one of the main qualification requirements for process reactors and is therefore considered a very important parameter during the design and development of reactors.

[0006] In a plasma etch reactor, the uniformity of etching parameters such as etch rate, profile, lateral dimensions, etc., is affected by several parameters. One of these parameters is the content and delivery of the components of the plasma gas. For improving uniformity, it has become increasingly important to provide consistent plasma discharge and plasma chemistry over the wafer while maintaining uniform gas mixing and distribution with improved transient response. Summary of the invention

[0007] In some examples, a gas distributor includes: a body; a gas inlet for allowing gas to enter the body; a gas outlet of a track array for distributing the gas to an external component; and a central gas distribution point disposed within the body at the center of the gas outlet of the track array and in fluid communication with the gas outlet of the track array.

[0008] In some examples, the gas outlets of the track array are radially and equidistantly spaced around the central gas distribution point. In some examples, the body includes an internal gas conduit connecting the central gas distribution point to the gas outlets of the track array. In some examples, the respective gas flow paths of the internal gas conduits from the central gas distribution point to the gas outlets of the track array are equal in length. In some examples, each gas outlet includes an orifice sized to enable a predetermined gas flow to pass through the gas outlet or to adjust a predetermined gas flow through the gas outlet. In some examples, the body includes mounting locations for respective control valves or nozzles to enable a predetermined gas flow to leave the gas outlet or to adjust a predetermined gas flow to leave the gas outlet. In some examples, each of the control valves or nozzles includes an orifice.

[0009] In some examples, the gas distributor further comprises the control valve or nozzle. In some examples, the control valve or nozzle is replaceable. In some examples, the control valve or nozzle is configured in a horizontal orientation or a vertical orientation. In some examples, an orifice associated with a first control valve or nozzle is sized differently than an orifice associated with a second control valve or nozzle. In some examples, the central gas distribution point comprises a volume that is substantially spherical in shape. In some examples, one or more pressure gauges measure or verify a gas flow rate of the gas flowing through the gas outlet of the track array. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Some embodiments are shown by way of example and not limitation in the figures of the accompanying drawings:

[0011] Figure 1 is a schematic diagram of a reaction chamber in which some embodiments of the present gas distributor may be applied.

[0012] Figure 2 is a pictorial view of a gas distributor portion according to an exemplary embodiment.

[0013] Figure 3 yes Figure 2 A partial cross-sectional view of the gas distributor portion shown in .

[0014] Figure 4 yes Figure 2-3 An upper partial cross-sectional view of the gas distributor portion shown in .

[0015] Figure 5 yes Figure 2 A pictorial view of a portion of a gas distributor is shown in FIG. , with some parts omitted for clarity of representation.

[0016] Figure 6is a schematic diagram of an orbital array of gas outlet nozzles according to an exemplary embodiment.

[0017] Figure 7A-7B Aspects of a gas outlet according to an exemplary embodiment are shown that include a "flow rate" orifice for limiting or verifying gas flow out of the gas distributor.

[0018] Figures 8A-8C Aspects of a gas outlet according to an exemplary embodiment are shown that include a "flow rate" orifice for limiting or verifying gas flow out of the gas distributor.

[0019] Fig. 9 Aspects of a gas outlet according to an exemplary embodiment are shown that include a "flow rate" orifice for limiting or verifying gas flow out of the gas distributor.

[0020] Fig.10 is a flowchart showing operations in a method of distributing gas, according to an illustrative embodiment.

[0021] Fig.11 is a block diagram illustrating an example of a machine by which one or more exemplary method embodiments may be performed or controlled. DETAILED DESCRIPTION

[0022] The following description contains systems, methods, techniques, instruction sequences, and computing machine program products that implement illustrative embodiments of the subject matter of the present invention. In the following description, for the purpose of illustration, many specific details are described to provide a complete understanding of the exemplary embodiments. However, it will be apparent to those skilled in the art that the present embodiment can be practiced without these specific details.

[0023] Portions of the disclosure of this patent document contain material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all copyright rights whatsoever. The following statement applies to any data described below and in the accompanying drawings that constitute a part of this document: Copyright Lam Research Corporation, 2018, All Rights Reserved.

[0024] As also mentioned above, a typical plasma etching apparatus includes a reactor in which there is a chamber through which one or more reactive gases flow. Within the chamber, the gas is ionized into a plasma, usually by radio frequency energy. The highly reactive ions of the plasma gas react with specific materials, such as polymer masks on the surface of a semiconductor wafer to be processed into an integrated circuit (IC). Prior to etching, the wafer is placed in the chamber and held in a suitable position with a chuck or holder, exposing the top surface of the wafer to the plasma gas.

[0025] There are several types of chucks known in the art. The chuck provides an isothermal surface and acts as a heat sink for the wafer. In one type, the semiconductor wafer is held in place for etching by a machine clamp. In another type of chuck, the semiconductor wafer is held in place by electrostatic forces generated by an electric field between the chuck and the wafer. The present disclosure may be applied to both types of chucks or other types of chucks.

[0026] In semiconductor processing, the uniformity of the etching or deposition rate of the entire wafer during the etching process directly affects the device yield. The above uniformity becomes one of the main qualification requirements of the process reactor and is therefore regarded as a very important parameter in the design and development of the reactor. With each increase in the size of the wafer diameter, the problem of ensuring uniformity of each batch of ICs in larger and larger wafers becomes more difficult. For example, when the wafer size increases from 200mm to 300mm and the size of the device on each wafer is smaller, the edge exclusion portion is reduced to, for example, 2mm or less. Therefore, it becomes very important to maintain uniform etching rate, device profile and desired size until 2mm or less from the edge of the wafer.

[0027] In a plasma etch reactor, the uniformity of etching parameters such as etch rate, profile, CD, etc. is affected by several parameters. One of these parameters is the content and delivery of the components of the plasma gas. For improving wafer uniformity, it has become more important to maintain uniform gas mixing and distribution upstream of the reactor and to provide consistent plasma discharge and plasma chemistry over the wafer.

[0028] Figure 1 is a schematic diagram of a reaction chamber in which some embodiments of the present gas distributor may be applied. Figure 1A capacitively coupled plasma processing chamber 100 is illustrated, which represents an exemplary plasma processing chamber of the type typically implemented to etch substrates. The chamber 100 includes a chuck 102, which represents a workpiece holder, on which a substrate such as a wafer 104 is positioned during etching. The chuck 102 can be implemented by any suitable clamping technology, such as by electrostatic, mechanical, clamping, vacuum, etc. During etching, the chuck 102 is generally supplied with dual RF frequencies (low frequency and high frequency), for example, 2 MHz and 27 MHz are supplied simultaneously during etching by a dual frequency source 106.

[0029] The upper electrode 108 is located above the wafer 104 and is grounded. Figure 1 An etching reactor is illustrated in which the surface of the upper electrode 108 is larger than the surface of the chuck 102 and the wafer 104. During etching, a plasma 110 is formed by an etchant source gas supplied via a mixed gas line 112 and exhausted through an exhaust line 114. Within the chamber 100, the mixed gas line 112 may be connected to a showerhead (not shown). The upstream mixing and distribution of the gases outside the chamber 100 is discussed in more detail below.

[0030] Electrically insulating ring 109 insulates upper electrode 108 from grounded chamber 100. Confinement ring 116 may be placed between upper electrode 108 and a Figure 1 Generally, confinement rings 116 help confine etching plasma 110 to a region above wafer 104 to improve process control and ensure repeatability.

[0031] When RF power is supplied from the dual frequency power source 106 to the chuck 102, equipotential field lines are established on the wafer 104. Equipotential field lines are electric field lines that extend throughout the plasma sheath between the wafer 104 and the plasma 110. During plasma processing, positive ions are accelerated through the equipotential field lines to impact on the surface of the wafer 104, thereby providing the desired etching effect, such as improved etching directionality. Due to the geometry of the upper electrode 108 and the chuck 102, the field lines may not be uniform across the wafer surface and may change significantly at the edge of the wafer 104. Therefore, a focus ring 118 is generally provided to improve process uniformity across the entire wafer surface. Reference Figure 1 , the wafer 104 is shown disposed within a focus ring 118, which may be formed of a suitable dielectric material, such as ceramic, quartz, plastic, etc. Thus, the presence of the focus ring 118 enables equipotential field lines to be disposed substantially uniformly over the entire surface of the wafer 104.

[0032] The conductive shield 120 substantially surrounds the focus ring 118. The conductive shield 120 is configured to be substantially grounded within the plasma processing chamber 100. The shield 120 prevents undesirable equipotential field lines from appearing outside the focus ring 118. With respect to the chamber source gases supplied via the mixed gas line 112, it has been found that the gas delivery characteristics within and upstream of the plasma reactor can be the most sensitive variable leading to etching or deposition non-uniformities.

[0033] Conventionally, the gas delivery plates upstream of the mixed gas line 112 are supplied via separate, gas-specific supply lines prior to mixing. These lines may contain tubing for each gas component in the gas mixture as well as flow elements such as valves, regulators, mass flow controllers (MFCs), and the like. These separate lines typically supply gases to a conventional gas mixing manifold via a manifold inlet. The separate gases are mixed in the manifold to be delivered to the gas supply lines (e.g., mixed gas line 112, Figure 1 ) to other components or processing chambers (e.g., processing chamber 100, Figure 1 ).

[0034] Conventional gas mixing manifolds or distributors generally include elongated, tubular structures with relatively high volumes. Each gas supply line used to create a desired gas mixture is separated by a specific distance along the length of the gas manifold. For example, some manifolds may be up to 27 inches long. The overall length of a given manifold may be based on the number of gas lines supplied to the manifold. The number of gas lines, in turn, may depend on the gas mixture required for a given process in the processing chamber 100. Gas line connection locations are generally not uniformly arranged between manifolds or across different processing chambers 100. In addition, it should be understood that even on a given manifold, some gas line inlet locations will be arranged at a location farther from the manifold outlet than other inlets.

[0035] Due to the different gas molecule sizes and flow rates, the momentum of each gas entering a conventional manifold or distributor can vary greatly. Fast-flowing, heavy gases in the manifold may affect the flow and entrainment of slower-flowing gases in an unstable manner due to turbulence and other factors. If the slow-flowing gas inlet is set at a relatively long distance from the manifold outlet, for example, the reaction rate in response to the desired change in gas mixture will be severely inhibited. Conventional manifolds can operate in a manner similar to a capacitor having an inherent delay time in response to an inductive change. In addition, even if the valve adjustment components that affect the desired gas mixture change operate quickly, the inherent delay time of the conventional manifold setting still presents a severe challenge in being able to identify the precise composition of a given gas mixture because the various flow rates, travel distances, and momentum of the components of a given gas mixture may be largely unknown.

[0036] Further complicating this situation is that, without proper control, the gas mixture or flow stability based on an established linear sequence of gas lines supplying a conventional manifold, particularly when supplied at different pressures, can be disturbed as new gas lines are inserted into or removed from the manifold. For example, gas line positions may change unintentionally or randomly when an upstream reservoir is depleted, or when a different gas mixture is desired within the manifold or processing chamber 100. Attempts to control the supply of individual gases into a conventional manifold have included the use of software controlled valves, but even this does not fully address the above challenges. Wafer etching applications are quite sensitive to the delivery time of the desired mixture to the chamber. Each of the above factors can significantly affect gas delivery performance, and potential problems caused by response time delays, co-flow inconsistencies, and gas mixing delays can compromise wafer uniformity.

[0037] In some applications, a mixed gas manifold or distributor may be required as a mixed gas source to supply a group of process chambers 100 arranged in series or in parallel. In other applications, multiple areas such as the center, edge, or middle area may require a reliable gas source. The above problems may be exacerbated in view of the different chamber locations and different distribution line lengths to each process chamber 100 in the group.

[0038] Figure 2 A pictorial view of a gas distributor subassembly 200 is shown in FIG. The subassembly 200 comprises a body 201 and a track or track array 205 of gas outlets, nozzles or orifices. The outlets may be arranged around Figure 3 2. The nozzle 202 is shown in the form of a central gas distribution point (or area) 302 visible in FIG. In some examples, the nozzle 202 may include an orifice specifically designed and sized to adjust the gas flow at a predetermined level, as described further below. Although the term "gas" is used in this specification, it should be understood that the systems and methods described herein may be more generally applicable to "fluids" unless the context indicates otherwise.

[0039] In some examples, as further described herein, a gas distribution point 302 is a local area or volume having a particular size and a central location relative to the array 205 of gas inlets or outlets. The term "point" is therefore not intended to represent a geometric element having zero dimensions. An example of a central mixed gas distribution point 302 may be at Figure 3 This is more clearly seen in the partial cross-sectional view of subassembly 200 provided in FIG.

[0040] In some examples, Figure 2-3The subassembly 200 shown in FIG. 1 forms a first half of a gas distributor 300. A complete gas distributor may be formed by joining an opposing half or a second half of the first half to the first half. In some examples, the opposing half or the second half of the gas distributor is substantially Figure 2-3 The subassembly 200 shown in FIG. Figure 3 200 '. In some examples, when the two subassemblies or halves 200 and 200' are combined together, a gas distributor 300 is formed. In the combined form, the central mixed gas distribution point 302 is in fluid communication with a central mixed gas inlet of the gas distributor (such as the nozzle 206 shown disposed at the center of the orbital array 205 of outlet nozzles or orifices 202). In some examples, the gas distributor 300 of the present disclosure can be used to replace conventional gas distributors of the types described above, or in combination with similar or other components in a gas supply system.

[0041] In some examples, the gas distributor 300 can operate as a gas mixer such that the gases within the distributor are reversed in a manner that uses the gas inlet as the gas outlet and vice versa. A central gas mixing point is formed by the central gas distribution point. In such an arrangement, the gas distributor can be connected to a gas mixer of the type described just above so that the two in series can thus mix and distribute the mixed (or uniform) gas to one or more processing chambers to address the shortcomings described herein with respect to the use of conventional gas manifolds and distributors.

[0042] Reference again Figure 2 , in some examples, each of the outlet nozzles 202 can distribute a single or mixed gas that has been split or combined with gases from other outlet nozzles to a downstream location, for example, to meet a desired ratio between gas supply channels or to be divided into different streams within the gas distributor 300. For example, each of the outlet nozzles 202 shown in the figure can be connected to a downstream component or process chamber 100 that requires a gas source. Eight outlet nozzles 202 are shown connected to the first half of the subassembly 200. There can be other numbers of nozzles. Generally, but not necessarily, the same number of outlet nozzles 202 is provided for the second half of the gas distributor 300, and for this particular example, a total of sixteen outlet nozzles 202 are provided. Depending on the desired capacity of the gas distributor 300, other numbers of nozzles 202 can be used to supply (or mix in alternative gas mixing modes) downstream components or process chambers 100.

[0043] See now Figure 3, each of the outlet nozzles 202 and 202' is shown in fluid communication with the central gas distribution point 302 via an inner conduit 304 formed in each subassembly 200 and 200'. Each inner conduit 304 has the same length or gas path as each other. Each control valve 208 and 208' can be operated to adjust the amount and rate of flow through the inner conduit 304 to produce or transport the desired gas or gas mixture. The inner conduit 304 is also Figure 4 and the airflow outlet of the inner conduit 304 is shown at Figure 5 502 of them. Figure 4 As shown in the figure, the inner conduits 304 are radially spaced at equal distances. As shown, the horizontally oriented control valves form a track array 205. In some examples, the gas flow outlet 502 can be threaded and used as an attachment point for the complementary threaded support rods 203 and 203' for the outlet nozzles 202 and 202', respectively. In some examples, the gas flow outlet 502 is welded to the gas distributor 300 as a stub shaft, or as a C-type sealing surface mount fitting.

[0044] See again Figure 3 , it should be understood that when the first and second subassemblies or halves 200 and 200' of the gas distributor 300 are joined together, the central gas distribution point 302 is defined by a volume having a generally beaded or spherical shape. This shape is shown in dashed outline in the figure. In some examples, the volume shape of the central gas distribution point 302 is oval or non-spherical. Other shapes are possible, such as, for example, cross-sectional shapes including circular, square, or rectangular. In some examples, the diameter of the beaded, spherical, or circular outline is in the range of 0.1-100 mm, in some examples in the range of 0.5-50 mm, and in some examples 1-10 mm.

[0045] It is noteworthy in the present disclosure that in some examples, the central gas distribution point 302 is equidistant from each of the outlet nozzles 202 and 202'. For this reason, some of the problems described above with or inherent in conventional gas mixing or distribution manifolds are solved in the sense that each gas flow path has the same length and is not dependent on the linear position of the outlet nozzle along the elongated manifold as in the exemplified prior art. The travel distance of each gas in a given gas mixture is the same. In the gas mixing mode of the gas distributor, one gas component is not collided or disturbed by another gas component until it reaches the central mixing point 302. The volume of the central gas distribution point 302 is relatively small compared to the volume of a conventional gas manifold, for example, having a length of about twenty-seven inches.

[0046] The track array 205 of sixteen outlet nozzles 202 is shown schematically in Figure 6. The outlet nozzle 202 connected to the first half of the gas distributor 300 (i.e., the subassembly 200) has a supply line shown in solid outline and is numbered 202. The outlet nozzle 202' connected to the second half of the gas distributor 300 has a supply line shown in dashed outline and is numbered 202'. Thus, a total of sixteen outlet nozzles are provided in this example. Each nozzle 202 and 202' distributes and supplies a desired gas or gas mixture to, for example, the process chamber 100 ( Figure 1 ).

[0047] It should be understood that the gas flowing into the gas distributor 300 is "divided", that is, divided or distributed in proportion to the number of outlet nozzles 202 and 202' that are open in operation. Some nozzles 202 and 202' may be closed and not in operation. Because the volume of the central gas distribution point is relatively small compared to conventional gas mixers and distributors, the composition of the mixed gas is not affected by its journey through the gas distributor 300 and the proportions of the components within the mixed gas are substantially maintained. Also in the gas mixing arrangement of the gas distributor 300 described above, for an arrangement with sixteen open inlet nozzles 200 and 200', a mixed gas having up to sixteen gas components can be formed. It should be understood that Figure 6 The orbital shape of the inlet nozzle array 205 shown by way of example in FIG. 2 may not be a complete or perfect orbital shape in some examples. A degree of ellipticity or other circular shape may be used in some examples.

[0048] In some examples, a control valve 208 is provided in fluid communication with each outlet nozzle 202 and 202'. The array 205 of control valves 208 is used to distribute the relative mass flow rates of gas exiting the gas distributor 300 via the outlet nozzles 202 and 202', or the composition of the mixed gas formed by the gas distributor 300 in its gas mixing setting. Figure 6 The gas flow rates are alternately labeled 208 and 208' and the individual and relative gas flow rates are labeled FR in the same view, indicating the flow restriction to the exiting gas. The gas flow through the outlet nozzles 202 and 202' can be controlled using control valves 208 and 208' and in some examples verified using related measurement equipment.

[0049] In some examples, the gas distributor 300 can also operate as a gas flow rate checker or regulator when distributing gas. For example, the gas flow rate (Q) to be measured can be delivered through an orifice of appropriate size, which is sized to ensure supersonic flow through the orifice. Under supersonic flow conditions, the gas flow rate Q=KP1, where (K) is a gas-related constant and (P1) is the upstream pressure. The upstream pressure (P1) can be measured with a high-precision digital capacitance manometer. The gas-related constant (K) is weakly dependent on temperature and can be determined empirically using an independent methodology. Therefore, for a given orifice size (e.g., the orifice of the outlet nozzle 202 and 202'), the gas flow rate (Q) through the outlet nozzle 202 or 202' can be checked (i.e., calculated or confirmed) for a given upstream pressure (P1) (e.g., in some examples, the pressure of the central gas distribution point 302 that can be measured by a manometer).

[0050] Reference now Figure 7A-7B , shows a schematic top view of a gas flow verifier 300. The gas flow verifier 300 includes a central gas distribution point 302. The gas flow verifier 300 includes a track array 205 of vertically oriented control valves 208 around the central gas distribution point 302. As shown, each control valve 208 includes a representative gas outlet 202. The gas flow verifier 300 is included in a gas distribution arrangement 700, which includes a pair of pressure gauges 702A and 702B and a third pressure gauge 704.

[0051] A series of interconnected gas paths or conduits 706 place control valve 208 and pressure gauges 702A, 702B and 704 in fluid communication with each other. In the illustrated gas distribution arrangement 700, pressure gauge 704 measures the gas pressure of the gas outlet 202 of two control valves 208 on the right side of the gas flow verifier 300 in the view. The pair of pressure gauges 702A and 702B similarly measure the three gas outlets 202 of the three control valves 208 on the left side of the gas flow verifier 300 in the view. The illustrated pressure gauge can be used to measure and verify the gas flow through the gas flow verifier 300 (and in some examples by each of its specific gas outlets 202). In some examples, some gas lookup tables are used to convert the gas pressure measured by pressure gauges 702A, 702B or 704 into actual flow. The gas flow error can be calculated and displayed on, for example, a user interface display. The system software can include a specific gas table to calculate the gas flow error applicable to the use of a specific gas. In some examples, the gas table contains pressure versus flow rate for a selected gas at the location of one or more orifices installed in the gas flow verifier 300. In some examples, one or more measurements of the rate of increase in gas pressure may be made compared to the corresponding predicted pressure defined in the appropriate lookup gas table. The measured time to reach a stable pressure is a function of the gas molecular weight and the gas flow rate (or MFC).

[0052] In some examples, the flow of gas through each of the control valves 208 may be regulated by orifices 707 (or "flow rate orifices"), which may be Figure 7B The orifice 707 is more clearly seen in the cross-sectional view of the control valve 208 shown in FIG. According to the gas flow equation further described above, for example, the orifice 707 can be designed and sized to allow or control the gas flow through the control valve 208 at a desired or specific or predetermined gas or mass flow rate. Thus, for example, if each orifice 707 in each of the control valves 208 shown is of equal size, then for a given upstream pressure, the gas flow through each control valve 208 (and then through each gas outlet 202) will be the same. In this way, the gas flow verifier of the present disclosure can distribute (divide) and supply gas equally to downstream components. Alternatively, by appropriately and differently designing the size of each orifice 707 for each gas outlet or nozzle 202, a corresponding and different desired or predetermined flow rate of distributed gas can be established for each outlet 202, while distributing gas to the same number of desired components located downstream of the gas flow verifier 300. Exemplary downstream components may include one or more wafer processing chambers 100.

[0053] In some examples, the orifice 707 may be included in Figure 7BIn a replaceable or interchangeable component 708 in the surface mounted control valve 208. For example, the interchangeable component 708 can be positioned within or below the surface mounted control valve 208. Other arrangements are possible, for example, such as Figure 3 , where an example orifice 707 is disposed directly within a gas outlet or nozzle 202 in the gas flow path of gas exiting the gas flow verifier 300. In some examples, the orifice 707 may be disposed in all or a selected number of the outlets 202.

[0054] In some examples, a series of interchangeable components 708, each containing an orifice 707 of a specific size, are provided so that the gas flow rate from all gas outlets 202 can be conveniently adjusted. In other examples, specific and different gas flow rates for individual gas outlets 202 can be established in a convenient manner. In some examples, the gas flow verifier 300 is conveniently used as a dual-function device, which can operate in two modes at the same time, namely, in one mode, the gas is proportionally diverted and distributed, and in another mode, the gas flow is restricted or verified. In essence, the same hardware of the gas flow verifier 300 is able to perform two functions at the same time. Therefore, the gas flow verifier 300 of the present disclosure is highly configurable, so as to adapt to specific and changing conditions and gas flow requirements in semiconductor manufacturing systems.

[0055] In other examples, now refer to Figures 8A-8C , orifice 707 can be embedded directly or indirectly in control valve 208 and, for example, calibrated at the factory in the manner described above to allow a desired or predetermined gas flow through control valve 208 (orifice 707 is installed on control valve 208) or to regulate a desired or predetermined gas flow through control valve 208 (orifice 707 is installed on control valve 208). Figures 8B-8C An alternative arrangement for providing the orifice 707 is shown and for example Figure 8C An alternative form of replaceable component 708 is shown.

[0056] Reference now Fig. 9 , illustrates an alternative arrangement of the airflow verifier 300. In this case, the control valves 208 are oriented horizontally and again form a track array 205. Fig. 7A Similar parts to those in are numbered accordingly.

[0057] Other configurations of the gas flow verifier 300 and the gas distribution arrangement 700 are possible. In some examples, the pressure gauges 702A-702B and 704 forming part of the gas distribution system 700 are used to verify the gas flow through the gas path or conduit 706, and more particularly to verify or determine the blockage condition of the gas outlet 202 or orifice 707. The pressure gauges 702A-702B and 704 can measure and verify the gas flow to be delivered by the gas flow verifier 300 at a point in time or over a period of time.

[0058] In some exemplary embodiments of the gas distributor or gas flow verifier 300 described herein, the relatively negligible volume of the gas distribution point 302 can significantly reduce the mixing delay or delay time that would otherwise be incurred in prior art systems when compared to the relatively large volume of a conventional gas mixing or distribution manifold. Gas flow rate regulation according to the present disclosure can be performed over a wide range of gas flow rates (e.g., 0.5 sccm to 5000 sccm, ±0.5%).

[0059] The present disclosure may also include exemplary methods. Fig.10 , a method 1000 for distributing gas includes: in operation 1002, providing a gas distributor, the gas distributor including: a body, an inlet for allowing gas to enter the body of the gas distributor, a track array of gas outlets for distributing gas from the gas distributor, and a central gas distribution point arranged in the gas distributor body and at the center of the track array of gas outlets; in operation 1004, supplying gas to the central gas distribution point through the gas inlet; in operation 1006, diverting the gas supplied in the central gas distribution point based on the number of gas outlets in the track array or the percentage of gas outlets in operation; in operation 1008, distributing the diverted gas to at least each of the gas outlets, or to each of the gas outlets in operation; and, in operation 1010, providing the distributed gas to a downstream location.

[0060] In some examples, method 1000 also includes distributing the split gas to the gas outlets via internal gas conduits formed in a body of the gas distributor, the internal gas conduits connecting the rail array of gas outlets to the central gas distribution point.

[0061] In some examples, method 1000 further includes distributing the split gas from the central gas distribution point to the gas outlet along respective gas flow paths of the internal gas conduit, the respective gas flow paths being equal in length.

[0062] In some examples, method 1000 also includes providing an orifice in association with each gas outlet, the orifice being sized to enable or regulate a specific gas flow through the corresponding gas outlet.

[0063] In some examples, method 1000 also includes providing a volume within the body of the gas distributor and for the central gas distribution point having a cross-sectional profile that is substantially spherical in shape, or substantially orbital in shape.

[0064] In some examples, the non-transitory machine-readable medium includes instructions 1124 that, when read by the machine 1100 , cause the machine to control operations in a method including at least the non-limiting example operations outlined above.

[0065] Fig.11 A block diagram of an example of a machine 1100 is provided, on which one or more of the exemplary processing embodiments described herein may be implemented or controlled by the machine 1100. In alternative embodiments, the machine 1100 may operate as a standalone device or may be connected (e.g., networked) to other machines. In a network arrangement, the machine 1100 may operate in the capacity of a server machine, a client machine, or both in a server-client network environment. In one example, the machine 1100 may be used as a peer machine in a peer-to-peer (P2P) network (or other distributed network) environment. In addition, although only a single machine 1100 is shown, the term "machine" should also be construed to include any collection of machines (these machines individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methods described herein, such as via cloud computing, software as a service (SaaS) or other computer cluster configurations).

[0066] The examples described herein may include logic, multiple components or mechanisms, or may be operated by logic, multiple components or mechanisms. A circuit system is a collection of circuits implemented in a tangible entity including hardware (e.g., simple circuits, gates, logic, etc.). Circuit system components may be flexible over time and with basic hardware variability. A circuit system includes components that can perform specified operations individually or in combination when operating. In one example, the hardware of the circuit system can be designed in a fixed and immutable manner to perform specific operations (e.g., hard wiring). In one example, the hardware of the circuit system may include variable connection entity components (e.g., execution units, transistors, simple circuits, etc.), which include computer-readable media that are modified by physical means (e.g., magnetically, electrically, by a movable setting of a constant mass particle, etc.) to encode instructions for specific operations. When connecting entity components, the basic electrical properties of the hardware components are changed (e.g., from an insulator to a conductor, and vice versa). Instructions enable embedded hardware (e.g., an execution unit or a loading mechanism) to generate components of the circuit system in hardware via variable connections to perform parts of specific operations when operating. Thus, when the apparatus is operating, the computer-readable medium is communicatively coupled to other components of the circuit system. In one example, any of the physical components may be used in more than one component in more than one circuit system. For example, in operation, an execution unit may be used in a first circuit of a first circuit system at one point in time, and reused by a second circuit of the first circuit system, or by a third circuit of the second circuit system at a different time.

[0067] The machine (e.g., computer system) 1100 may include a hardware processor 1102 (e.g., a central processing unit (CPU), a hardware processor core, or any combination thereof), a graphics processing unit (GPU) 1103, a main memory 1104, and a static memory 1106, some or all of which may communicate with each other via an interconnect (e.g., a bus) 1108. The machine 1100 may also include a display device 1110, an alphanumeric input device 1112 (e.g., a keyboard), and a user interface (UI) navigation device 1114 (e.g., a mouse). In one example, the display device 1110, the alphanumeric input device 1112, and the UI navigation device 1114 may be a touch screen display. The machine 1100 may additionally include a mass storage device (e.g., a drive unit) 1116, a signal generating device 1118 (e.g., a speaker), a network interface device 1120, and one or more sensors 1121, such as a global positioning system (GPS) sensor, a compass, an accelerometer, or another sensor. The machine 1100 may include an output controller 1128 (e.g., serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC), etc.) connection) to communicate with or control one or more peripheral devices (e.g., printers, card readers, etc.).

[0068] The mass storage device 1116 may include a machine-readable medium 1122 on which one or more sets of data structures or instructions 1124 (e.g., software) may be stored that implement or are used by any one or more of the techniques or functions described herein. The instructions 1124 may also reside, in whole or in part, within the main memory 1104, within the static memory 1106, within the hardware processor 1102, or within the GPU 1103 during execution thereof by the machine 1100. In one example, one or any combination of the hardware processor 1102, the GPU 1103, the main memory 1104, the static memory 1106, or the mass storage device 1116 may constitute the machine-readable medium 1122.

[0069] Although the machine-readable medium 1122 is shown as a single medium, the term "machine-readable medium" may include a single medium or multiple media (eg, a centralized or distributed database and / or associated caches and servers) configured to store one or more instructions 1124.

[0070] The term "machine-readable medium" may include any medium capable of storing, encoding, or carrying instructions 1124 for execution by the machine 1100 and causing the machine 1100 to perform any one or more of the techniques of the present disclosure; or any medium capable of storing, encoding, or carrying data structures used by or related to such instructions 1124. Non-limiting examples of machine-readable media may include solid-state memory and optical and magnetic media. In one example, a mass machine-readable medium includes a machine-readable medium 1122 having a plurality of particles having a constant mass (e.g., rest mass). Therefore, a mass machine-readable medium is not a transient propagating signal. Specific examples of a mass machine-readable medium may include non-volatile memory, such as semiconductor memory devices (e.g., electronically programmable read-only memory (EPROM), electronically erasable programmable read-only memory (EEPROM), and flash memory devices; magnetic disks, such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks. The instructions 1124 may be further sent or received via the network interface device 1120 using a transmission medium over a communication network 1126.

[0071] Although the embodiments have been described with reference to specific exemplary embodiments, it is obvious that various modifications and changes can be made to these embodiments without departing from the broader scope of the subject matter of the present invention. Therefore, the description and the drawings are regarded as illustrative and not restrictive. The drawings constituting a part of this article show specific embodiments in an illustrative (but not limiting) manner, and the subject matter can be practiced in these specific embodiments. The illustrated embodiments are described in sufficient detail to enable those skilled in the art to practice the teachings disclosed herein. Other embodiments can be used and generated therefrom, so that structural and logical replacements and changes can be made without departing from the scope of the present disclosure. Therefore, this specific embodiment is not regarded as restrictive, and the scope of the various embodiments is limited only by the appended claims, together with the full scope of the equivalent schemes given by these claims.

[0072] These embodiments of the subject matter of the present invention may be referred to herein individually and / or collectively by the term "invention", which is for convenience only and is not intended to voluntarily limit the scope of the present application to any single invention or inventive concept (if more than one invention or inventive concept is in fact disclosed). Therefore, although specific embodiments are shown and described herein, it should be understood that any configuration calculated to achieve the same purpose can replace the specific embodiments shown. The present disclosure is intended to cover all adjustments or changes of the various embodiments. After reading the above description, the combination of the above embodiments and other embodiments not specifically described herein will be apparent to those skilled in the art.

Claims

1. A gas distributor, comprising: main body; a gas outlet of the track array for distributing said gas to external components; a gas inlet for allowing gas to enter the body, the gas inlet being centrally located with respect to the gas outlets of the track array; a central gas distribution point separate from the gas inlet, the central gas distribution point comprising an interior volume disposed within the body and surrounded by the gas outlets of the track array, the interior volume being in fluid communication with the gas outlets of the track array via an array of corresponding gas pathways extending from the interior volume to each of the gas outlets, and wherein the lengths of the gas pathways are the same; as well as A control valve is in fluid communication with the internal volume, the control valve being configured to individually control a gas flow rate within each gas path.

2. The gas distributor of claim 1, wherein the gas outlets of the orbital array are radially and equidistantly spaced around the central gas distribution point.

3. The gas distributor of claim 1, wherein the body includes an internal gas conduit connecting the central gas distribution point to the gas outlets of the track array.

4. The gas distributor of claim 3, wherein the respective gas flow paths of the internal gas conduits from the central gas distribution point to the gas outlets of the track array are equal in length.

5. The gas distributor of claim 1, wherein each gas outlet comprises an orifice sized to enable or regulate a predetermined gas flow through the gas outlet.

6. The gas distributor according to claim 5, wherein the body comprises mounting locations for respective control valves or nozzles to enable or regulate a predetermined gas flow rate out of the gas outlet.

7. The gas distributor of claim 6, wherein each of the control valve or nozzle comprises an orifice.

8. The gas distributor according to claim 6, further comprising the control valve or the nozzle.

9. The gas distributor according to claim 8, wherein the control valve or the nozzle is replaceable.

10. The gas distributor according to claim 8, wherein the control valve or the nozzle is arranged in a horizontal orientation or a vertical orientation.

11. The gas distributor of claim 8, wherein an orifice associated with a first control valve or nozzle is sized differently than an orifice associated with a second control valve or nozzle.

12. The gas distributor of claim 1, wherein the central gas distribution point comprises a substantially spherical shaped volume.

13. The gas distributor according to claim 1, further comprising: One or more pressure gauges for measuring or verifying the gas flow rate of the gas flowing through the gas outlets of the track array.

14. A method of distributing a gas, comprising: A gas distributor is provided, the gas distributor comprising: main body; a gas outlet of the track array for distributing said gas to external components; a gas inlet for allowing gas to enter the body, the gas inlet being centrally located with respect to the gas outlets of the track array; a central gas distribution point separate from the gas inlet, the central gas distribution point comprising an interior volume disposed within the body and surrounded by the gas outlets of the track array, the interior volume being in fluid communication with the gas outlets of the track array via an array of corresponding gas pathways extending from the interior volume to each of the gas outlets, and wherein the lengths of the gas pathways are the same; as well as a control valve in fluid communication with the internal volume, the control valve configured to individually control a gas flow rate within each gas path; supplying gas to the central gas distribution point through the gas inlet; Dividing the gas supply within the central gas distribution point based on the number of gas outlets in the track array, or the percentage of the gas outlets in operation; Distributing the split gas to each of the gas outlets, or to each of the gas outlets in operation; as well as The dispensed gas is provided to a downstream location.

15. The method according to claim 14, further comprising: The split gas is distributed to the gas outlets through internal gas conduits formed in the body, the internal gas conduits connecting the gas outlets of the track array to the central gas distribution point.

16. The method according to claim 15, further comprising: The split gas is distributed from the central gas distribution point to the gas outlets of the track array along respective gas flow paths of the internal gas duct, the respective gas flow paths being equal in length.

17. The method according to claim 14, further comprising: In association with each gas outlet, an orifice is provided which is dimensioned to enable or regulate a predetermined gas flow through said gas outlet.

18. The method of claim 14, wherein the gas distributor further comprises a nozzle.

19. The method of claim 18, wherein each of the control valves and nozzles includes one or more orifices, wherein an orifice associated with a first control valve or nozzle is sized differently than an orifice associated with a second control valve or nozzle.

20. A machine-readable medium comprising instructions, which, when read by a machine, cause the machine to control an operation using a gas distributor in a gas distribution method, the gas distributor comprising: main body, a gas outlet of a rail array for distributing said gas to external components, a gas inlet for allowing gas to enter the body, the gas inlet being centrally located with respect to the gas outlets of the track array; a central gas distribution point separate from the gas inlet, the central gas distribution point comprising an interior volume disposed within the body and surrounded by the gas outlets of the track array, the interior volume being in fluid communication with the gas outlets of the track array via an array of corresponding gas pathways extending from the interior volume to each of the gas outlets, and wherein the lengths of the gas pathways are the same; as well as a control valve in fluid communication with the internal volume, the control valve being configured to individually control a gas flow rate within each gas path, the operations comprising at least: supplying gas to the central gas distribution point through the gas inlet; Dividing the gas supply within the central gas distribution point based on the number of gas outlets in the track array, or the percentage of the gas outlets in operation; distributing the split gas to each of the gas outlets, or to each of the gas outlets in operation; and The dispensed gas is provided to a downstream location.

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