Exposure apparatus

Abstract

An exposure apparatus has a cylindrical peripheral wall member. The peripheral wall member forms a processing space capable of housing a substrate and has an upper opening and a lower opening. Further, a light exit portion is provided at an upper portion of the peripheral wall member in a manner to cover the upper opening. A lower lid member is provided below the peripheral wall member, and the lower lid member is provided to be movable in an up-down direction and capable of closing and opening the lower opening. In a state where the substrate is housed in the processing space and the lower opening is closed by the lower lid member, an inert gas is used to replace an ambient gas in the processing space. In this state, vacuum ultraviolet rays are emitted from the light exit portion to the substrate, and the substrate is exposed.

Description

Technical Field

[0001] This invention relates to an exposure apparatus that uses vacuum ultraviolet light to expose a substrate. Background Technology

[0002] Vacuum ultraviolet light is sometimes used to modify films formed on substrates. For example, Japanese Patent Application Publication No. 2018-159828 discloses an exposure apparatus that uses vacuum ultraviolet light to expose films containing directed self-assembly materials on substrates.

[0003] The exposure apparatus includes a processing chamber, a projection section, and a sealing section. The processing chamber has an upper opening and an internal space. The projection section is positioned above the processing chamber, covering the upper opening. A transfer opening is formed on the side of the processing chamber for transferring a substrate between the interior and exterior of the chamber. The sealing section is configured to allow the transfer opening to be opened and closed using a baffle.

[0004] During the substrate exposure process, firstly, the transport opening is opened, and the substrate is transported into the processing chamber through this opening. Next, with the substrate positioned inside the processing chamber, the transport opening is closed, thus sealing the interior space of the processing chamber. Furthermore, to reduce the attenuation of vacuum ultraviolet light irradiating the substrate due to oxygen, the ambient gas inside the processing chamber is replaced with an inert gas. When the oxygen concentration inside the processing chamber drops to a predetermined level, vacuum ultraviolet light is irradiated onto the substrate through the upper opening of the processing chamber. This modifies the film on the substrate. Then, the transport opening is reopened, and the exposed substrate is moved out of the processing chamber. Summary of the Invention

[0005] As described in Japanese Patent Application Publication No. 2018-159828, in the exposure apparatus, when exposing each substrate, the ambient gas in the processing chamber needs to be replaced with an inert gas until the oxygen concentration in the processing chamber reaches a predetermined concentration. In this case, to improve the efficiency of the exposure process, it is ideal to shorten the time required to replace the ambient gas in the processing chamber.

[0006] Furthermore, as described in Japanese Patent Application Publication No. 2018-159828, the exposure process is performed using a low-oxygen environment gas. Therefore, the ambient gas in the entire processing chamber where exposure takes place is replaced by an inert gas. However, it takes a relatively long time to uniformly replace the inert gas. If the replacement of the inert gas is uneven, the accuracy of the exposure process will decrease. Moreover, if the time required to replace the inert gas is prolonged, the efficiency of the exposure process will decrease.

[0007] The purpose of this invention is to provide an exposure apparatus that can improve the efficiency of exposure processing without reducing the cleanliness of the substrate with a simple and compact structure.

[0008] Another object of the present invention is to provide an exposure apparatus that can improve the accuracy and efficiency of exposure processing.

[0009] An exposure apparatus according to one aspect of the present invention exposes at least a portion of a circular substrate and includes: a cylindrical peripheral wall member forming a processing space capable of accommodating the substrate and having an upper opening and a lower opening; a light emitting section disposed above the peripheral wall member such that it covers the upper opening of the peripheral wall member and having an emitting surface capable of emitting vacuum ultraviolet light into the processing space; a sealing member disposed below the peripheral wall member and movable in a vertical direction and configured to close and open the lower opening; a substrate support section supporting the substrate between the emitting surface and the sealing member such that the substrate faces the emitting surface; a supply section supplying inert gas into the processing space in a state where the substrate is supported by the substrate support section and the lower opening is closed by the sealing member; and an exhaust section exhausting ambient gas from the processing space to the outside of the processing space in a state where the substrate is supported by the substrate support section and the lower opening is closed by the sealing member.

[0010] In this exposure apparatus, the substrate is supported between the emission surface and a sealing member with the emission surface of the light emitting unit facing each other. The lower opening of the peripheral wall member is sealed by the sealing member, and the ambient gas in the processing space is replaced by an inert gas. In this state, vacuum ultraviolet light is emitted from the emission surface of the light emitting unit onto the substrate, and the substrate is exposed. During this exposure, the oxygen concentration in the processing space is reduced due to the inert gas, thus reducing the attenuation of the vacuum ultraviolet light emitted from the emission surface of the light emitting unit onto the substrate.

[0011] According to the aforementioned configuration, the peripheral wall component has a cylindrical shape corresponding to the shape of the substrate, thereby reducing the volume of the processing space. This allows for the rapid replacement of the ambient gas within the processing space with an inert gas. Consequently, the oxygen concentration in the processing space can be reduced in a short time.

[0012] Furthermore, the processing space formed by the cylindrical peripheral wall component eliminates any corners where gas could stagnate. Therefore, when the ambient gas within the processing space is replaced with an inert gas, a smooth gas flow occurs along the inner circumferential surface of the peripheral wall component. Consequently, particles are less likely to remain within the processing space. This improves the cleanliness of the substrate within the processing space.

[0013] Furthermore, the sealing member can move the substrate into and out of the processing space by opening and closing the lower opening of the peripheral wall member. The sealing member can open and close the lower opening with a simple configuration and operation by moving in the vertical direction. Therefore, it is not necessary to provide a substrate loading and unloading outlet in the peripheral wall member, nor is it necessary to provide a complex mechanism for opening and closing the loading and unloading outlet.

[0014] These results in the ability to improve the efficiency of exposure processing with a simple and compact configuration without reducing substrate cleanliness.

[0015] A first gas flow path and a second gas flow path can be formed inside the peripheral wall component to connect the outside of the peripheral wall component with the processing space. The supply unit can be configured to supply inert gas into the processing space through the first gas flow path, and the discharge unit can be configured to discharge the ambient gas in the processing space to the outside of the processing space through the second gas flow path.

[0016] In this case, there is no need to install piping or nozzles for supplying inert gas within the processing space. Furthermore, there is no need to install piping or nozzles for venting ambient gas from the processing space to the outside. Therefore, because the area within the processing space that obstructs gas flow is reduced, particles are less likely to remain within the processing space.

[0017] The first gas flow path and the second gas flow path may be formed in the portions of the peripheral wall component that are opposite to each other across the processing space.

[0018] In this configuration, a smooth gas flow is formed from the first gas flow path to the second gas flow path within the processing space. This allows for the smooth replacement of the ambient gas within the processing space with inert gas, thus reducing the time required for replacement. Furthermore, by suppressing turbulence within the processing space, the oxygen concentration in multiple sections of the processing space can be kept uniform. Consequently, uniform exposure of the substrate is achieved.

[0019] The sealing component may have a flat upper surface facing the exit surface, and multiple substrate supports are mounted on the upper surface of the sealing component.

[0020] In this case, since multiple substrate supports are commonly mounted on the flat upper surface of the enclosure, when multiple substrate supports are mounted on the enclosure, their vertical positions can be easily and accurately aligned. This prevents the substrate supported by the substrate supports from tilting relative to the emission surface, thereby enabling uniform exposure of the substrate.

[0021] The exposure apparatus may also include a plurality of support pins, each of which has a plurality of upper ends extending vertically below the processing space and capable of supporting the substrate. The sealing member may have a plurality of through holes into which the plurality of support pins are inserted. The plurality of support pins may be arranged such that, when the lower opening is closed by the sealing member, the upper ends of the plurality of support pins are located below the upper ends of the plurality of substrate supports, and when the lower opening is opened by the sealing member, the upper ends of the plurality of support pins are located above the upper ends of the plurality of substrate supports.

[0022] In this configuration, when the substrate is moved into the processing space, with the lower opening open using the sealing member, the substrate is placed from outside the exposure apparatus onto the upper ends of multiple support pins at a position below the processing space. Then, when the lower opening is closed using the sealing member, the sealing member moves upward relative to the multiple support pins, causing the upper ends of the multiple substrate supports to move above the upper ends of the multiple support pins. Thus, the substrate is transferred from the multiple support pins to the multiple substrate supports, and the substrate is supported within the processing space.

[0023] On the other hand, when the substrate is removed from the processing space, the sealing member moves downward relative to the multiple support pins, causing the upper ends of the multiple substrate supports to move further downward than the upper ends of the multiple support pins. Thus, the substrate is transferred from the multiple substrate supports to the multiple support pins, and the substrate is supported below the processing space. In this way, by moving the sealing member vertically, the substrate can be moved in and out of the processing space with a simple configuration and operation.

[0024] The exposure apparatus may also include a control unit that controls the light emitting section and the supply section. The control unit can control the supply section in such a way that, from the point in time when the substrate is supported by the substrate support section and the lower opening is closed by the sealing member in the processing space to a predetermined first time period, the inert gas is supplied to the processing space at a first flow rate, and from the point in time when the first time period has elapsed to a second time period, the inert gas is supplied to the processing space at a second flow rate lower than the first flow rate; and the light emitting section is controlled in such a way that, during the second time period, vacuum ultraviolet light is emitted from the emitting surface onto the substrate.

[0025] According to the control described above, after the lower opening is closed, inert gas can be supplied to the processing space at a high first flow rate before substrate exposure, and the ambient gas in the processing space can be discharged. Thus, most of the ambient gas in the processing space can be replaced with inert gas in a short time.

[0026] Then, during substrate exposure, inert gas is supplied to the processing space at a lower second flow rate, and ambient gas within the processing space is discharged. In this case, the gas flow within the processing space is reduced. This prevents particles remaining in the processing space during substrate exposure from being dispersed by the inert gas flow. Therefore, processing defects caused by particle dispersion within the processing space during substrate exposure are prevented.

[0027] Another aspect of the present invention provides an exposure apparatus for exposing a substrate, comprising: a peripheral wall member forming a processing space capable of accommodating the substrate and having an upper opening; a light emitting section covering the upper opening and having an emitting surface capable of emitting vacuum ultraviolet light; and a substrate support section supporting the substrate within the processing space below the light emitting section during exposure. The peripheral wall member has a flow path for guiding inert gas from below to above and an opening communicating the flow path with the processing space. The opening has a first side surface and a second side surface facing each other, the distance between the first side surface and the second side surface gradually increasing from the downstream end of the flow path toward the processing space. The exposure apparatus is provided with a collision surface for the inert gas flowing from the downstream end of the flow path to collide with the opening. The collision surface is located above the substrate supported by the substrate support section during exposure.

[0028] According to the aforementioned configuration, the inert gas reaches the downstream end through a flow path formed within the peripheral wall component. The inert gas supplied from the downstream end to the opening collides with the collision surface above the substrate and then flows into the processing space along the first and second side surfaces. In this case, the ambient gas between the light emitting section and the substrate can be uniformly displaced. Furthermore, it is not necessary to displace the ambient gas throughout the entire processing space. Therefore, the time required for displacement can be shortened. These results in improved efficiency and accuracy of the exposure process.

[0029] The peripheral wall component can be cylindrical. In this case, there are no corners where gas can stagnate within the processing space formed by the cylindrical peripheral wall component. Therefore, when the ambient gas in the processing space is replaced with an inert gas, a smooth gas flow is formed along the inner circumferential surface of the peripheral wall component. As a result, the replacement time can be further shortened and the amount of inert gas used for replacement can be reduced.

[0030] The peripheral wall component may include an exhaust section for discharging ambient gases from the processing space. In this case, by utilizing the exhaust section to dissipate the ambient gases from the processing space, it is easier to form a flow of inert gas within the processing chamber. Therefore, the time required for uniformly displacing the ambient gases on the substrate of the processing space can be further reduced.

[0031] The collision surface may include a portion of the lower surface of the light emitting section. In this case, by designating a portion of the lower surface of the light emitting section that covers the upper opening of the peripheral wall component as the collision surface, it is not necessary to provide a separate collision surface. Therefore, the manufacturing cost of the exposure apparatus can be reduced.

[0032] The collision surface can be located within the peripheral wall component. In this case, by making a portion of the peripheral wall component the collision surface, there is no need to provide a separate collision surface. Therefore, the manufacturing cost of the exposure apparatus can be reduced.

[0033] The lower opening may be formed in the peripheral wall component. The exposure apparatus may also include: a sealing component configured to close and open the lower opening; and a lifting drive unit that controls the sealing component in such a way that when the substrate is transferred between the external part and the substrate support, the sealing component moves to a first position located below the lower opening, and when the substrate is exposed, the sealing component moves to a second position to close the lower opening.

[0034] In this case, during substrate handover, the sealing member moves to a first position below the processing space. This allows for easy handover of the substrate between the external portion and the substrate support. Furthermore, during substrate exposure, the sealing member moves to a second position above the first position. This allows for easy sealing of the lower opening.

[0035] The substrate support can be provided on the upper surface of the enclosure component. In this case, the substrate support moves together with the enclosure component in the vertical direction. This allows the substrate to be easily placed on the substrate support from outside the exposure apparatus below the processing space. Furthermore, during substrate exposure, the substrate support moves upward, thereby bringing the substrate closer to the light emitting section. This further improves the efficiency of the substrate exposure process. Attached Figure Description

[0036] Figure 1 This is a schematic cross-sectional view showing the configuration of the exposure apparatus according to the first embodiment of the present invention.

[0037] Figure 2 It is used for explanation Figure 1 A three-dimensional diagram showing the movement of some of the components of an exposure device.

[0038] Figure 3 It means Figure 1 A schematic top view of some of the components of the exposure device.

[0039] Figure 4 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the first embodiment during exposure processing.

[0040] Figure 5 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the first embodiment during exposure processing.

[0041] Figure 6 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the first embodiment during exposure processing.

[0042] Figure 7 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the first embodiment during exposure processing.

[0043] Figure 8 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the first embodiment during exposure processing.

[0044] Figure 9 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the first embodiment during exposure processing.

[0045] Figure 10 It means in order to achieve Figures 4-9 The operation of the exposure device and the use of Figure 1 A flowchart of a series of processes performed by the control unit.

[0046] Figure 11 It means in order to achieve Figures 4-9 The operation of the exposure device and the use of Figure 1 A flowchart of a series of processes performed by the control unit.

[0047] Figure 12 This diagram illustrates an example of a method for replacing ambient gases within a treatment space.

[0048] Figure 13 This is another example of a method for displacing ambient gases within a treatment space.

[0049] Figure 14 This is another example of a method for displacing ambient gases within a treatment space.

[0050] Figure 15 It means including Figure 1 A schematic block diagram of an example of a substrate processing apparatus for an exposure device.

[0051] Figure 16 This is a schematic cross-sectional view illustrating the configuration of an exposure apparatus according to other embodiments.

[0052] Figure 17 This is a schematic cross-sectional view showing the configuration of the exposure apparatus according to the second embodiment of the present invention.

[0053] Figure 18 It is used for explanation Figure 17 A three-dimensional diagram showing the movement of some of the components of an exposure device.

[0054] Figure 19 yes Figure 17 A schematic top view of the peripheral wall components.

[0055] Figure 20 It means Figure 19 An enlarged three-dimensional view of the structure of the first gas flow path.

[0056] Figure 21 It means Figure 19 An enlarged three-dimensional view of the structure of the second gas flow path.

[0057] Figure 22 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the second embodiment during exposure processing.

[0058] Figure 23 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the second embodiment during exposure processing.

[0059] Figure 24 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the second embodiment during exposure processing.

[0060] Figure 25 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the second embodiment during exposure processing.

[0061] Figure 26 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the second embodiment during exposure processing.

[0062] Figure 27 This is a schematic side view illustrating the basic operation of the exposure apparatus according to the second embodiment during exposure processing.

[0063] Figure 28 This is a graph showing the comparison results of Example 1, Example 2, and Comparative Example 1.

[0064] Figure 29 This is a schematic cross-sectional view illustrating the configuration of an exposure apparatus in other embodiments. Detailed Implementation

[0065] Hereinafter, the exposure apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings. In the following description, the substrate refers to substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, such as substrates for FPD (Flat Panel Display), semiconductor substrates, substrates for optical discs, substrates for magnetic disks, substrates for optical discs, substrates for photomasks, ceramic substrates, or substrates for solar cells. Furthermore, the substrate described below is a substrate with at least a circular shape, for example, a circular substrate with notches or orientation flats formed therein. Moreover, a film modified by vacuum ultraviolet light is formed on the main surface of the substrate.

[0066] Furthermore, in the exposure apparatus described below, with the main surface of the substrate facing upwards and the back surface of the substrate (the side opposite to the main surface) facing downwards, ultraviolet light (hereinafter referred to as vacuum ultraviolet light) with a wavelength of about 120 nm or more and about 230 nm or less is irradiated from above onto the main surface of the substrate. Therefore, in the following description, the upper surface of the substrate is the main surface of the substrate, and the lower surface of the substrate is the back surface of the substrate.

[0067] [A] First Embodiment

[0068] [1] Composition of the exposure apparatus

[0069] Figure 1 This is a schematic cross-sectional view showing the configuration of the exposure apparatus according to the first embodiment of the present invention. Figure 2 It is used for explanation Figure 1 A three-dimensional view of the operation of some of the components of the exposure apparatus 100. (e.g.) Figure 1 As shown, the exposure apparatus 100 includes a light emitting unit 10, a peripheral wall component 20, a lower cover component 30, a substrate support mechanism 40, a gas supply system 51, a gas exhaust system 52, a lifting drive unit 53, and a control unit 60.

[0070] In this exposure apparatus 100, the processing space 20S for exposing the substrate W is formed by a peripheral wall member 20. Specifically, the peripheral wall member 20 has a flat cylindrical shape. The space surrounded by the inner peripheral surface of the peripheral wall member 20 is used as the processing space 20S. Furthermore, the peripheral wall member 20 has a flat, annular upper end surface 23 and a lower end surface 24. An upper opening 21 is formed inside the upper end surface 23, and a lower opening 22 is formed inside the lower end surface 24.

[0071] A light emitting section 10 is provided above the peripheral wall component 20 such that it covers the upper opening 21 of the peripheral wall component 20. The light emitting section 10 includes a housing 11, a light-transmitting plate 13, a planar light source section 14, and a power supply device 15.

[0072] The housing 11 has a bottom wall portion 11a, a cylindrical peripheral wall portion 11b, and a top portion 11c. The bottom wall portion 11a, the peripheral wall portion 11b, and the top portion 11c form an internal space 10S. Furthermore, Figure 2 In the image, only the housing 11 in the light emitting section 10 is shown by a single dashed line.

[0073] like Figure 1 As shown, a lower opening 12 is formed in the bottom wall portion 11a of the housing 11. The lower opening 12 has, for example, a circular shape. The inner diameter of the lower opening 12 is slightly smaller than the inner diameter of the peripheral wall member 20. A light-transmitting plate 13 is mounted to the bottom wall portion 11a in a manner that closes the lower opening 12. In this embodiment, the light-transmitting plate 13 is a quartz glass plate. Other materials that allow vacuum ultraviolet light to pass through can be used as the material of the light-transmitting plate 13.

[0074] The light source unit 14 and the power supply unit 15 are housed within the internal space 10S of the housing 11. The light source unit 14 has a configuration in which multiple rod-shaped light source elements LE emitting vacuum ultraviolet light are arranged horizontally at specific intervals. Each light source element LE can be, for example, a xenon excimer lamp, or other excimer lamps or deuterium lamps. The power supply unit 15 supplies electricity to the light source unit 14.

[0075] On the lower surface of the bottom wall portion 11a, the upper end surface 23 of the peripheral wall component 20 is connected with the lower surface of the light-transmitting plate 13 as the emission surface 13S facing the processing space 20S. With this configuration, vacuum ultraviolet light generated from the light source portion 14 is emitted into the processing space 20S through the emission surface 13S.

[0076] The lower cover member 30 is positioned below the peripheral wall member 20 and is movable in the vertical direction. Furthermore, the lower cover member 30 is configured to close and open the lower opening 22 using its vertical movement. Hereinafter, the position where the lower cover member 30 closes the lower opening 22 is referred to as the cover-closed position, and the position where the lower cover member 30 opens the lower opening 22 is referred to as the cover-open position. The lifting drive unit 53 includes, for example, a stepper motor. Figure 2 As indicated by the thick dashed arrow, the lower cover component 30 moves vertically between the closed and open positions.

[0077] The lower cover component 30 has a flat upper surface 31 facing the emission surface 13S of the light emitting section 10. For example... Figure 1As shown, a sealing member 39 is mounted on the upper surface 31 of the lower cover member 30. When the lower cover member 30 is in the closed position, the sealing member 39 is in close contact with the portion of the lower end face 24 of the peripheral wall member 20 surrounding the lower opening 22. The sealing member 39 includes, for example, an O-ring.

[0078] Furthermore, on the upper surface 31 of the lower cover member 30, a plurality of support members 38 (three in this example) configured to support the lower surface of the substrate W are mounted. Each support member 38 is a spherical proximity ball, formed of, for example, ceramic.

[0079] Furthermore, a plurality of through holes 32 corresponding to the plurality of support pins 41 described later are formed in the central portion of the lower cover component 30. Moreover, a plurality of receiving tubes 33 are provided on the lower surface of the lower cover component 30, extending downward at fixed intervals from the portions forming the plurality of through holes 32. Each receiving tube 33 has an inner diameter identical to the inner diameter of the through hole 32. An inwardly projecting flange is formed at the lower end of each receiving tube 33, extending from its inner circumferential surface toward its axis.

[0080] The substrate support mechanism 40 includes a plurality of (three in this example) support pins 41 and pin connecting members 42. Each support pin 41 includes a front end member 41a and a support shaft 41b. The plurality of support shafts 41b are arranged to extend vertically and are respectively inserted into a plurality of through holes 32 and a plurality of receiving tubes 33 of the lower cover member 30. The pin connecting members 42 connect the lower ends of the plurality of support shafts 41b and are fixed to a substrate portion (not shown) of the exposure apparatus 100. The plurality of front end members 41a are respectively disposed at the upper ends of the plurality of support shafts 41b and are formed of, for example, ceramic or resin.

[0081] With the lower cover component 30 in the open position, the plurality of front end components 41a (the upper ends of the plurality of support pins 41) are located above the upper ends of the plurality of support components 38 mounted on the lower cover component 30. Thus, as Figure 1 As shown, the substrate W to be processed is supported on multiple front-end components 41a. At this time, the upper surface of the substrate W faces the emission surface 13S of the light emission section 10.

[0082] As the lower cover component 30 moves from the open position toward the closed position, the plurality of front end components 41a of the substrate support mechanism 40 are received inside the receiving tube 33 through the plurality of through holes 32 of the lower cover component 30. Therefore, when the lower cover component 30 is in the closed position, the plurality of front end components 41a (the upper ends of the plurality of support pins 41) are located below the upper ends of the plurality of support components 38 mounted on the lower cover component 30. As a result, the substrate W supported on the plurality of front end components 41a is transferred to the plurality of support components 38.

[0083] Here, each front end member 41a of the substrate support mechanism 40 has an outward flange with a diameter larger than that of the support shaft 41b. On the other hand, on the upper surface of the inward flange formed at the lower end of each of the plurality of receiving tubes 33, a sealing member (not shown) is provided that can contact the lower surface of the outward flange of the front end member 41a. These sealing members include, for example, O-rings. Moreover, when the lower cover member 30 is in the closed position, each sealing member blocks the gas flow between the processing space 20S, the internal space of the through hole 32, and the internal space of the receiving tube 33 and the outside of the processing space 20S. As a result, the processing space 20S is sealed.

[0084] Figure 1 The gas supply system 51 includes piping 51a, an inert gas supply source (not shown), and valves (not shown). Furthermore, the gas exhaust system 52 includes piping 52a, valves (not shown), and exhaust equipment (not shown).

[0085] Inside the peripheral wall component 20, a first gas flow path 25 and a second gas flow path 26 are formed, connecting the outside of the peripheral wall component 20 to the processing space 20S. In the peripheral wall component 20, the first gas flow path 25 and the second gas flow path 26 are formed facing each other across the processing space 20S (see description below). Figure 3 ).

[0086] The first and second gas flow paths 25 and 26 are each formed by a through hole extending from the outer peripheral surface of the peripheral wall component 20 to the inner peripheral surface. The first gas flow path 25 is connected to a pipe 51a extending from the gas supply system 51. The second gas flow path 26 is connected to a pipe 52a extending from the gas discharge system 52.

[0087] The gas supply system 51 supplies inert gas to the processing space 20S via a non-illustrated inert gas supply source through piping 51a and a first gas flow path 25. In this embodiment, nitrogen is used as the inert gas. The gas discharge system 52 discharges the ambient gas of the processing space 20S of the peripheral wall component 20 to the outside of the peripheral wall component 20 via a second gas flow path 26 and piping 52a.

[0088] An oxygen concentration meter 52b is installed in the piping 52a. The oxygen concentration meter 52b measures the oxygen concentration of the gas flowing through the piping 52a as the oxygen concentration in the processing space for 20 seconds, and provides the measured oxygen concentration to the control unit 60 within a specific cycle. The oxygen concentration meter 52b is, for example, a galvanic cell oxygen sensor or a zirconia oxygen sensor.

[0089] The control unit 60 includes, for example, a CPU (Central Processing Unit) and memory. The memory of the control unit 60 stores various control programs. The CPU of the control unit 60 executes the control programs stored in memory, such as... Figure 1 The single-dot dashed arrow in the diagram is used to control the operation of each component within the exposure device 100.

[0090] Figure 3 It means Figure 1 A schematic top view of some of the components of the exposure device 100. Figure 3 In the diagram, the outer shape of the housing 11 of the light emitting section 10 and its lower opening 12 are indicated by a single-dotted line. Furthermore, Figure 3 In order to make it easier to understand the positional and size relationship between the substrate W and the peripheral wall component 20 housed in the processing space 20S, a dot pattern is attached to the substrate W and a shading line is attached to the peripheral wall component 20.

[0091] like Figure 3 As shown, during exposure processing, the substrate support mechanism 40 is used in a manner that places it approximately in the center of the processing space 20S. Figure 1 The peripheral wall member 20 supports the substrate W. In this state, the inner peripheral surface of the peripheral wall member 20 faces the outer peripheral end of the substrate W. Moreover, the distance between the outer peripheral end of the substrate W and the inner peripheral surface of the peripheral wall member 20 remains approximately fixed.

[0092] and, Figure 3 In the diagram, the three through holes 32 formed in the lower cover component 30 and the three support components 38 mounted on the lower cover component 30 are indicated by dashed lines. For example... Figure 3 As shown, three through holes 32 are formed at equal intervals on a first imaginary circle cr1, which is referenced to the center 30C of the cover member 30 when viewed from above. On the other hand, three support members 38 are formed at equal intervals on a second imaginary circle cr2, which is referenced to the center 30C of the cover member 30 when viewed from above. Here, the second imaginary circle cr2 has a size larger than the first imaginary circle cr1 and approximately half the diameter of the substrate W. Therefore, when the substrate W is supported by the three support members 38, the stability of the substrate W support is improved compared to the case where the substrate W is supported by the three through holes 32.

[0093] Here, when the diameter D1 of the substrate W, which is the object of exposure in the exposure apparatus 100, is 300 mm, the inner diameter D2 of the peripheral wall member 20 is, for example, greater than 300 mm and less than 400 mm, preferably greater than 300 mm and less than 350 mm, and more preferably greater than 300 mm and less than 320 mm. In this example, the inner diameter D2 of the peripheral wall member 20 is 310 mm.

[0094] Furthermore, the thickness (height) of the peripheral wall component 20 is, for example, greater than 5 mm and less than 50 mm, preferably greater than 5 mm and less than 20 mm. In this example, the thickness (height) of the peripheral wall component 20 is 10 mm.

[0095] [2] Basic operation of the exposure device 100 during exposure processing

[0096] As described above, in the exposure apparatus 100 of this embodiment, the substrate W to be processed is exposed by being irradiated with vacuum ultraviolet light having a wavelength of, for example, 172 nm. Here, if a large amount of oxygen exists in the path of the vacuum ultraviolet light toward the substrate W, oxygen molecules will absorb the vacuum ultraviolet light and separate into oxygen atoms, and the separated oxygen atoms will recombine with other oxygen molecules, thereby producing ozone. In this case, the vacuum ultraviolet light reaching the substrate W attenuates. The attenuation of vacuum ultraviolet light is greater than the attenuation of ultraviolet light with a wavelength greater than approximately 230 nm. Therefore, in the exposure apparatus 100 of this embodiment, the substrate W is irradiated with vacuum ultraviolet light for 20 seconds in a processing space where the oxygen concentration is maintained low. The basic operation of the exposure apparatus 100 during the exposure process will be described below.

[0097] Figures 4-9 This is a schematic side view illustrating the basic operation of the exposure apparatus 100 of the first embodiment during exposure processing. Figures 4-9 In the middle, the open position pa1 and the closed position pa2 are respectively formed by the upper surface 31 of the lower cover component 30. Figure 1 The height position is indicated by ).

[0098] In the initial state before the exposure apparatus 100 is powered on, the lower cover component 30 is in the closed position pa2. When the power to the exposure apparatus 100 is turned on, as... Figure 4 As indicated by the hollow arrow a1, the lower cover component 30 moves to the cover open position pa1.

[0099] Next, with the plurality of front end components 41a of the substrate support mechanism 40 positioned below the peripheral wall component 20, the substrate W is moved from outside the exposure apparatus 100 into the interior of the exposure apparatus 100. In this case, as... Figure 5 As indicated by hollow arrow a2, the substrate W, transported by a conveying device (not shown), is inserted from the side of the exposure apparatus 100 into the space between the peripheral wall member 20 and the plurality of front end members 41a, and placed on the plurality of front end members 41a. In this state, the upper surface of the substrate W faces the emission surface 13S of the light emitting section 10 across the processing space 20S. The conveying device is, for example, described later. Figure 15 The conveying device 220.

[0100] Next, as Figure 6As indicated by the hollow arrow a3, the lower cover member 30 moves to the closed position pa2. Thus, with the substrate W housed within the processing space 20S, the lower opening 22 of the peripheral wall member 20 is closed by the lower cover member 30. Furthermore, within the processing space 20S, the substrate W is supported by multiple support members 38. Additionally, the lower ends of the multiple receiving tubes 33 provided on the lower cover member 30 are closed by multiple front end members 41a and a sealing member (not shown). Thus, the processing space 20S is sealed.

[0101] In this state, such as Figure 6 As shown by the thick dashed-dot arrow in the image, from Figure 1 The gas supply system 51 supplies inert gas to the processing space 20S through the first gas flow path 25. Furthermore, the ambient gas within the processing space 20S is discharged to the outside of the exposure apparatus 100 through the second gas flow path 26 and the gas discharge system 52. As a result, the ambient gas within the processing space 20S is gradually replaced by inert gas, and the oxygen concentration within the processing space 20S decreases.

[0102] Then, when the oxygen concentration in the processing space decreases to a predetermined concentration (hereinafter referred to as the target oxygen concentration) within 20 seconds, as follows: Figure 7 As shown by the thick solid arrow, vacuum ultraviolet light is irradiated onto the upper surface of the substrate W from the light source section 14 of the light emission section 10 through the emission surface 13S. Here, the target oxygen concentration is set such that, for example, when the lower opening 22 of the peripheral wall member 20 is opened after exposure processing, the ozone concentration near the peripheral wall member 20 is below a pre-allowed concentration (0.1 ppm), for example, 1%. Whether the oxygen concentration in the processing space 20S decreases to the target oxygen concentration can be determined, for example, based on the light emitted from the light source section 14 of the light emission section 10 through the emission surface 13S. Figure 1 The oxygen concentration meter 52b outputs a signal for determination. Furthermore, during the period when vacuum ultraviolet light is irradiated onto the substrate W, the replacement of the ambient gas within the processing space using inert gas for 20 seconds can continue or be stopped.

[0103] When the exposure amount of vacuum ultraviolet light irradiating the substrate W (the energy of vacuum ultraviolet light irradiated per unit area on the substrate) reaches the predetermined exposure amount, the irradiation of the upper surface of the substrate W with vacuum ultraviolet light is stopped. By exposing the upper surface of the substrate W in this manner, the film formed on the substrate W is modified according to specific exposure conditions.

[0104] Here, the illuminance of the vacuum ultraviolet light irradiating the substrate W under the target oxygen concentration environment (the power of the vacuum ultraviolet light irradiated per unit area on the substrate) is known. In this case, the exposure amount of the vacuum ultraviolet light irradiating the substrate W is determined based on the illuminance of the vacuum ultraviolet light and the irradiation time of the vacuum ultraviolet light. In this embodiment, whether the exposure amount of the vacuum ultraviolet light irradiating the substrate W reaches the predetermined set exposure amount is determined based on whether a time corresponding to the set exposure amount (exposure time) has elapsed since the start of the vacuum ultraviolet light irradiation.

[0105] After stopping the irradiation of the upper surface of substrate W with vacuum ultraviolet light, as Figure 8 As indicated by the hollow arrow a4, the lower cover component 30 moves to the cover open position pa1. As a result, the lower opening 22 of the peripheral wall component 20 is opened, and the substrate W is removed and placed below the processing space 20S in a state supported on the multiple front end components 41a.

[0106] Finally, as Figure 9 As indicated by hollow arrow a5, the substrate W, supported on multiple front-end components 41a, is received by a conveying device (not shown) and moved to the side of the exposure apparatus 100. This conveying device is, for example, described later. Figure 15 The conveying device 220.

[0107] [3] A series of processes performed by the control unit 60 during exposure processing

[0108] Figure 10 and Figure 11 It means in order to achieve Figures 4-9 The operation of the exposure apparatus 100 in the first embodiment utilizes Figure 1 A flowchart of a series of processes performed by the control unit 60. Figure 10 and Figure 11 The series of processes shown begins, for example, by switching the power supply of the exposure apparatus 100 from an off state to an on state. First, the control unit 60 controls... Figure 1 The lifting drive unit 53 moves the lower cover component 30 to the cover open position pa1 (step S1).

[0109] Next, the control unit 60 determines whether the substrate W is placed on the plurality of front-end components 41a (step S2). This determination can be made, for example, by providing a sensor (e.g., a photoelectric sensor) within the exposure apparatus 100 to detect whether the substrate W is on the substrate support mechanism 40, and based on the output from that sensor. Alternatively, it can be based on a control device external to the exposure apparatus 100 (e.g., described later). Figure 15 The control device 210) performs the command signal.

[0110] When the substrate W is not placed on the plurality of front end components 41a, the control unit 60 repeats the process of step S2 until the substrate W is placed on the front end components 41a of the plurality of support pins 41. On the other hand, when the substrate W is placed on the plurality of front end components 41a, the control unit 60 controls... Figure 1 The lifting drive unit 53 moves the lower cover component 30 to the cover closed position pa2 (step S3).

[0111] Next, the control unit 60 controls... Figure 1 The gas exhaust system 52 exhausts the ambient gas within the processing space 20S of the peripheral wall component 20 (step S4). Then, the control unit 60 controls... Figure 1 The gas supply system 51 supplies inert gas to the processing space 20S of the peripheral wall component 20 (step S5). Regarding the processing in steps S4 and S5, either one of the processes can be performed first, or they can be performed simultaneously.

[0112] Next, the control unit 60 is based on the... Figure 1 The oxygen concentration is measured by the oxygen concentration meter 52b to determine whether the oxygen concentration in the processing space for 20 seconds has decreased to the target oxygen concentration (step S6).

[0113] If the oxygen concentration in the processing space 20S has not yet decreased to the target oxygen concentration, the control unit 60 repeats step S6 until the oxygen concentration in the processing space 20S reaches the target oxygen concentration. Conversely, when the oxygen concentration in the processing space 20S decreases to the target oxygen concentration, the control unit 60 controls... Figure 1 The light emitting section 10 emits vacuum ultraviolet light from the light source section 14 toward the substrate W in the processing space 20S (step S7). As a result, the vacuum ultraviolet light irradiates the substrate W, and the film formed on the substrate W is modified.

[0114] Next, the control unit 60 determines whether the set exposure time has elapsed since the start of vacuum ultraviolet light emission from the light source unit 14 (step S8). If the set exposure time has not elapsed, the control unit 60 repeats step S8 until the set exposure time has elapsed. On the other hand, once the set exposure time has elapsed, the control unit 60 stops the emission of vacuum ultraviolet light from the light emission unit 10 (step S9).

[0115] Next, the control unit 60 controls... Figure 1 The gas exhaust system 52 stops the exhaust of ambient gas within the processing space for 20 seconds (step S10). Furthermore, the control unit 60 controls... Figure 1 The gas supply system 51 is stopped from supplying inert gas to the processing space for 20 seconds (step S11). Regarding the processing in steps S9, S10, and S11, any part of the processing can be performed first, or all of the processing can be performed simultaneously.

[0116] Next, the control unit 60 controls... Figure 1 The lifting drive unit 53 moves the lower cover member 30 to the cover open position pa1 (step S12). Then, the control unit 60 determines whether the substrate W has been transferred from the plurality of front end members 41a (step S13). Similar to the process in step S2, this determination can be made, for example, by providing a sensor (e.g., a photoelectric sensor) within the exposure apparatus 100 to detect whether the substrate W is on the substrate support mechanism 40, and based on the output from that sensor. Alternatively, it can be based on a control device external to the exposure apparatus 100 (e.g., described later). Figure 15 The control unit 60 operates on command signals from the control device 210. If the substrate W has not yet been transferred, the control unit 60 repeats step S13 until the substrate W is transferred. Conversely, when the substrate W is transferred, the control unit 60 returns to step S2.

[0117] [4] Method for replacing ambient gases within a 20-second treatment space

[0118] As described, in the exposure apparatus 100, in order to reduce the oxygen concentration in the processing space 20S, the ambient gas in the processing space 20S is discharged and an inert gas is supplied to the processing space 20S, and the ambient gas in the processing space 20S is replaced by the inert gas.

[0119] Figure 12 This is a diagram illustrating an example of a method for replacing ambient gases within a processing space for 20 seconds. Figure 12 In this embodiment, the temporal variation of the inert gas supply to the processing space 20S during the exposure process is represented by a graph. Furthermore, in this embodiment, the supply and discharge amounts of the inert gas to the processing space 20S during the exposure process are the same. Figure 12 The vertical axis represents the supply of inert gas, and the horizontal axis represents time.

[0120] about Figure 12 The timeline is as follows: at time point t0, the substrate W is moved into the exposure apparatus 100. At time point t1, the moved substrate W is housed within the processing space 20S, and the lower opening 22 of the peripheral wall member 20 is closed by the lower cover member 30. At time point t2, vacuum ultraviolet light irradiation of the substrate W within the processing space 20S begins. At time point t3, vacuum ultraviolet light irradiation of the substrate W within the processing space 20S ceases. Furthermore, at time point t4, the lower opening 22 of the peripheral wall member 20 is opened.

[0121] Figure 12In the example, from time point t0 to t1, the inert gas supply (and exhaust volume) remains 0. Then, from time point t1 to t2, the inert gas supply (and exhaust volume) remains at a relatively high value α, and from time point t2 to t3, the inert gas supply (and exhaust volume) remains at a value β lower than α. Then, from time point t3 to t4, the inert gas supply (and exhaust volume) remains 0.

[0122] According to this replacement method, from time point t1 to t2, before the substrate W is exposed, inert gas is supplied to the processing space at a relatively high flow rate (value α) for 20 seconds, and the ambient gas in the processing space is discharged. Thus, most of the ambient gas in the processing space for 20 seconds can be replaced with inert gas in a short time. In other words, the oxygen concentration can be reduced in a short time.

[0123] Then, during substrate W exposure, inert gas is supplied to the processing space 20S at a relatively low flow rate (value β). This reduces the flow of gas generated within the processing space. This prevents particles remaining in the processing space 20S during substrate W exposure from being dispersed by the inert gas flow. Therefore, it prevents processing defects caused by particle dispersion within the processing space 20S during substrate W exposure.

[0124] Figure 13 This is another diagram illustrating a method for replacing ambient gas within a processing space for 20 seconds. (Compared to...) Figure 12 Similarly, Figure 13 In the diagram, the temporal variation of the inert gas supply to the processing space during the 20-second exposure process is represented by a graph. Regarding... Figure 13 The timeline, with time points t0, t1, t2, t3, t4 and... Figure 12 The time points t0, t1, t2, t3, and t4 are the same.

[0125] Figure 13 In the example, from time point t0 to t1, the supply (and exhaust) of inert gas is maintained at 0. Then, from time point t1 to t3, the supply (and exhaust) of inert gas is maintained at a relatively high value α. Then, from time point t3 to t4, the supply (and exhaust) of inert gas is maintained at 0. According to this substitution method, during the period when the lower opening 22 of the peripheral wall component 20 is closed by the lower cover component 30, inert gas is continuously supplied to the processing space 20S at a high flow rate. As a result, it is easy to maintain the oxygen concentration in the processing space 20S at a low state. Moreover, in this case, from time point t2 to t3, ozone generated due to exposure is easily discharged from the processing space 20S. Furthermore, according to this substitution method, it is not necessary to switch the supply (and exhaust) of inert gas to multiple values. Therefore, the configuration of the gas supply system 51 and the gas exhaust system 52 can be simplified.

[0126] Figure 14 This is another example of a method for replacing ambient gases within a processing space for 20 seconds. Figure 14 In, with Figure 12 Similarly, the temporal variation in the amount of inert gas supplied to the processing space during the exposure process over 20 seconds is represented by a graph. Regarding... Figure 14 The timeline, with time points t0, t1, t2, t3, t4 and... Figure 12 The time points t0, t1, t2, t3, and t4 are the same.

[0127] Figure 14 In the example, from time point t0 to t4, the supply (and exhaust) of inert gas is maintained at a relatively high value α. According to this displacement method, inert gas is also supplied to the processing space 20S while the lower opening 22 of the peripheral wall component 20 is open. Therefore, at the point when the lower opening 22 is closed by the lower cover component 30, the oxygen concentration in the processing space 20S is maintained at a relatively low level. Thus, after the lower opening 22 is closed by the lower cover component 30, the oxygen concentration in the processing space 20S can approach the target oxygen concentration in a shorter time. Furthermore, the amount of ozone generated can be further suppressed.

[0128] [5] Effects

[0129] (1) In the exposure apparatus 100, the peripheral wall component 20 has a cylindrical shape corresponding to the shape of the substrate W, thereby reducing the volume of the processing space 20S. As a result, the ambient gas in the processing space 20S can be rapidly replaced with an inert gas. Therefore, the oxygen concentration in the processing space 20S can be reduced in a short time.

[0130] Furthermore, the processing space 20S formed by the cylindrical peripheral wall component 20 does not have any corners where gas can be trapped. Therefore, when the ambient gas in the processing space 20S is replaced with an inert gas, a smooth gas flow is formed along the inner peripheral surface of the peripheral wall component 20. As a result, particles are less likely to remain in the processing space 20S. Therefore, the cleanliness of the substrate W in the processing space 20S can be improved.

[0131] Furthermore, the lower cover member 30 can move the substrate W into and out of the processing space 20S by opening and closing the lower opening 22 of the peripheral wall member 20. The lower cover member 30 can open and close the lower opening 22 with a simple configuration and operation by moving in the vertical direction. Therefore, it is not necessary to provide a substrate W loading / unloading outlet on the peripheral wall member 20, nor is it necessary to provide a complex structure for opening and closing the loading / unloading outlet.

[0132] These results in the ability to improve the efficiency of exposure processing with a simple and compact configuration without reducing the cleanliness of the substrate W.

[0133] (2) As described above, a first gas flow path 25 and a second gas flow path 26 are formed inside the peripheral wall component 20. Inert gas is directly supplied to the processing space 20S through the first gas flow path 25. Moreover, the ambient gas in the processing space 20S is directly discharged through the second gas flow path 26.

[0134] With this configuration, there is no need to install piping or nozzles for supplying inert gas within the processing space 20S. Furthermore, there is no need to install piping or nozzles within the processing space 20S for discharging ambient gas to the outside. As a result, the area within the processing space 20S that obstructs gas flow is reduced, making it less likely for particles to remain within the processing space 20S.

[0135] (3) In the peripheral wall component 20, the first gas flow path 25 and the second gas flow path 26 are formed facing each other across the processing space 20S. In this case, a smooth gas flow is formed from the first gas flow path 25 to the second gas flow path 26. As a result, the ambient gas in the processing space 20S can be smoothly replaced with inert gas, thus shortening the time required for ambient gas replacement. Moreover, since turbulence is suppressed in the processing space 20S, the oxygen concentration in multiple parts of the processing space 20S can be kept uniform. Therefore, uniform exposure of the substrate W is possible.

[0136] (4) In the exposure apparatus 100, the substrate W, which is to be processed, is supported by a plurality of support members 38 while being housed within the processing space 20S. Here, since the plurality of support members 38 are commonly mounted on the flat upper surface 31 of the lower cover member 30, when the plurality of support members 38 are mounted on the lower cover member 30, the vertical positions of the plurality of support members 38 can be easily and accurately aligned. As a result, the substrate W supported by the plurality of support members 38 can be prevented from tilting relative to the emission surface 13S of the light emission section 10, thereby enabling uniform exposure of the substrate W.

[0137] (5) In the exposure apparatus 100, the lower cover component 30 moves in the vertical direction, thereby realizing the loading of the substrate W into the processing space 20S and the loading of the substrate out of the processing space 20S with a simple structure and operation.

[0138] [6] Includes Figure 1 The substrate processing apparatus of the exposure apparatus 100

[0139] Figure 15 It means including Figure 1A schematic block diagram of an example of a substrate processing apparatus of the exposure apparatus 100. (See diagram for reference.) Figure 15 As shown, the substrate processing apparatus 200 includes, in addition to the exposure apparatus 100, a control device 210, a conveying device 220, a heat treatment device 230, a coating device 240, and a developing device 250.

[0140] The control device 210 includes, for example, a CPU and memory or a microcomputer, and controls the operation of the exposure device 100, the conveying device 220, the heat treatment device 230, the coating device 240 and the developing device 250.

[0141] When the substrate W is processed by the substrate processing apparatus 200, the conveying device 220 conveys the substrate W between the exposure apparatus 100, the heat treatment apparatus 230, the coating apparatus 240 and the developing apparatus 250.

[0142] The heat treatment apparatus 230 performs heat treatment on the substrate W before and after the coating process performed by the coating apparatus 240 and the development process performed by the developing apparatus 250. The coating apparatus 240 forms a film modified by vacuum ultraviolet light on the upper surface of the substrate W by coating a specific treatment solution onto the upper surface of the substrate W. Specifically, in this example, the coating apparatus 240 coats a treatment solution containing a oriented self-assembled material onto the upper surface of the substrate W. In this case, a pattern of two polymers is formed on the upper surface of the substrate W through microphase separation generated in the oriented self-assembled material.

[0143] Exposure apparatus 100 irradiates the upper surface of substrate W, on which a film has been formed using coating apparatus 240, with vacuum ultraviolet light. As a result, the bond between the patterns of the two polymers formed on substrate W is broken.

[0144] The developing apparatus 250 supplies a solvent for one of the polymers used to remove patterns from the two polymers after exposure to the substrate W as a developing solution. As a result, a pattern containing the other polymer remains on the substrate W.

[0145] Furthermore, the coating apparatus 240 can coat a specific processing solution onto the upper surface of the substrate W in such a way that a SOC (Spin-On-Carbon) film is formed instead of a film containing oriented self-assembled materials, thus serving as a film modified by vacuum ultraviolet light. In this case, by exposing the substrate W on which the SOC film is formed to vacuum ultraviolet light, the SOC film can be modified.

[0146] When a SOC film is formed in the coating apparatus 240, a resist film can be further formed on the SOC film after exposure treatment in the coating apparatus 240. In this case, after the substrate W with the resist film is exposed by an exposure apparatus located outside the substrate processing apparatus 200, the developing apparatus 250 can perform a developing treatment on the exposed substrate W.

[0147] According to the exposure apparatus 100, the efficiency of the exposure process can be improved without reducing the cleanliness of the substrate W with a simple and compact configuration. Therefore, according to Figure 15 The substrate processing apparatus 200 can improve the processing accuracy of substrate W and reduce the manufacturing cost of substrate W.

[0148] [7] Other implementation methods

[0149] (1) In the exposure apparatus 100 of the first embodiment, the inert gas supplied to the first gas flow path 25 is directly supplied to the processing space 20S, and the ambient gas in the processing space 20S is directly discharged from the second gas flow path 26. Therefore, there are no nozzles or other components for gas supply and discharge in the processing space 20S, but the present invention is not limited thereto. Components for controlling the gas flow generated in the processing space 20S may also be provided in the processing space 20S.

[0150] (2) In the exposure apparatus 100 of the first embodiment, the first gas flow path 25 and the second gas flow path 26 may be formed on the lower cover member 30 instead of being formed on the peripheral wall member 20.

[0151] (3) In the exposure apparatus 100 of the first embodiment, the substrate W housed in the processing space 20S is exposed under the condition of being supported by a plurality of support members 38 mounted on the lower cover member 30, but the present invention is not limited thereto.

[0152] The substrate support mechanism 40 can be configured to move in the vertical direction instead of having multiple support components 38 mounted on the lower cover component 30. Figure 16 This is a schematic cross-sectional view illustrating the configuration of the exposure apparatus 100 in other embodiments. (Explanation) Figure 16 Exposure device 100 and Figure 1 The exposure device 100 is different.

[0153] Figure 16 In the exposure apparatus 100, multiple support components 38 may not be installed on the lower cover component 30. Figure 1 ) and multiple containment tubes 33 ( Figure 1 On the other hand, the substrate support mechanism 40 is configured to move vertically relative to the substrate portion of the exposure apparatus 100 when the plurality of support pins 41 are respectively inserted into the plurality of through holes 32 of the lower cover member 30. Furthermore, Figure 16 The exposure apparatus 100 also includes a lifting drive 54 for moving the substrate support mechanism 40 in the vertical direction.

[0154] Here, the vertical position of the substrate support mechanism 40 when the upper ends of the multiple support pins 41 are located within the processing space 20S is called the processing position, and the position below the fixed distance from the processing position is called the standby position.

[0155] The lifting drive unit 54 includes, for example, a stepper motor and is configured to move the substrate support mechanism 40 vertically between a processing position and a standby position. With this configuration, in this example, when the lower cover member 30 is in the open position pa1 and the substrate support mechanism 40 is in the standby position, the substrate W brought in from outside the exposure apparatus 100 is received by the plurality of front end members 41a of the substrate support mechanism 40.

[0156] When the substrate W, which has been moved into the exposure apparatus 100, is received by the substrate support mechanism 40, the lower cover member 30 moves to the cover-closed position pa2 and the substrate support mechanism 40 moves to the processing position. Thus, the substrate W is housed in the processing space 20S. Vacuum ultraviolet light is then applied to the substrate W, which is supported by multiple front-end members 41a.

[0157] When the exposure of substrate W is completed, the lower cover component 30 moves to the cover open position pa1, and the substrate support mechanism 40 moves to the standby position. As a result, substrate W is removed below the processing space 20S. Finally, substrate W, supported by multiple front-end components 41a, is moved outside the exposure apparatus 100.

[0158] In this configuration, the multiple front-end components 41a and the lower cover component 30 are configured such that when the lower cover component 30 and the substrate support mechanism 40 are respectively in the cover-closed position pa2 and the processing position, the multiple through holes 32 can be closed. Thus, the sealed state of the processing space 20S during the exposure process is ensured.

[0159] in addition, Figure 16 In the exposure apparatus 100, if the processing space 20S is kept sealed, the distance between the emission surface 13S of the light emitting section 10 and the substrate W can be adjusted according to the type of substrate W and the processing content. In this case, by further reducing the distance between the emission surface 13S of the light emitting section 10 and the substrate W, the exposure time can be shortened. As a result, the efficiency of the exposure process can be improved.

[0160] Figure 16 In the example, lifting drive units 53 and 54 are individually provided as components for driving the lower cover component 30 and the substrate support mechanism 40, but the present invention is not limited thereto.

[0161] Figure 16 In the exposure apparatus 100, a lifting drive unit configured to drive the lower cover member 30 and the substrate support mechanism 40 together can be provided instead of the lifting drive units 53 and 54.

[0162] The lifting drive unit may include, for example, a motor and a first cam and a second cam disposed on the rotating shaft of the motor. In this case, the first cam is configured to use the rotational force generated by the motor to lift the lower cover member 30 between a cover open position pa1 and a cover closed position pa2. Moreover, the second cam is configured to use the rotational force generated by the motor to lift the substrate support mechanism 40 between a standby position and a processing position.

[0163] Alternatively, the lifting drive unit may include, for example, a cylinder and a rod-shaped shaft component. In this case, the lower cover component 30 and the substrate support mechanism 40 are mounted on the shaft component. In this configuration, with one end of the shaft component fixed, for example, the cylinder moves the other end of the shaft component in the vertical direction. As a result, the lower cover component 30 moves up and down between the cover open position pa1 and the cover closed position pa2, and the substrate support mechanism 40 moves up and down between the standby position and the processing position.

[0164] According to the above configuration, the number of parts in the exposure apparatus 100 can be reduced and the exposure apparatus 100 can be made more compact.

[0165] (4) In the exposure apparatus 100 of the first embodiment, a front end member 41a is provided in the substrate support mechanism 40 in order to seal the processing space 20S, but the present invention is not limited thereto. For example, if the sealing of the processing space 20S is not required to be extremely high, the front end member 41a may not be provided in the substrate support mechanism 40.

[0166] (5) In the first embodiment, the supply and discharge rates of the inert gas to the processing space 20S during the exposure process are set to be the same, but the present invention is not limited thereto. The supply and discharge rates of the inert gas to the processing space 20S during the exposure process may also be different. For example, the discharge rate of the ambient gas in the processing space 20S may be less than the supply rate of the inert gas, and the discharge rate of the ambient gas in the processing space 20S may also be greater than the supply rate of the inert gas.

[0167] (6) In the exposure apparatus 100 of the first embodiment, the determination of whether the oxygen concentration in the processing space 20S during the exposure process has decreased to the target oxygen concentration is based on the output of the oxygen concentration meter 52b, but the present invention is not limited thereto.

[0168] For example, if the time required for the oxygen concentration in the processing space to reach the target oxygen concentration (hereinafter referred to as the concentration attainment time) from the time the lower opening 22 is closed to the time the oxygen concentration reaches the target concentration (from the time the lower opening 22 is closed) is known, the determination can be made based on the concentration attainment time. In this case, the oxygen concentration meter 52b is not required, and the configuration of the exposure apparatus 100 is simplified.

[0169] [8] Correspondence between the constituent elements of the claims and the constituent elements of the embodiments

[0170] Hereinafter, examples of the correspondence between each constituent element of the claims and each element of the embodiments will be described. In the first embodiment, the lower cover component 30 is an example of a sealing component, the support component 38 is an example of a substrate support portion, the gas supply system 51 is an example of a supply portion, and the gas discharge system 52 is an example of a discharge portion. Figures 12-14 The time points t1 to t2 are examples of the first time point. Figures 12-14 The value α is an example of the first flow. Figures 12-14 Time points t2 to t3 are examples of the second time point. Figures 12-14 The value β is an example of the second flow rate.

[0171] Other elements having the structure or function described in the claims can also be used as constituent elements of the claims.

[0172] [B] Second Embodiment

[0173] [1] Composition of the exposure apparatus

[0174] Figure 17 This is a schematic cross-sectional view showing the configuration of the exposure apparatus according to the second embodiment of the present invention. Figure 18 It is used for explanation Figure 17 A three-dimensional view of the operation of some of the components of the exposure device 100. Figure 17 and Figure 18 In the structure and operation of the exposure device 100, except for the structure of the peripheral wall component 20, all are related to... Figure 1 and Figure 2 same.

[0175] [2] Structure of peripheral wall component 20

[0176] Figure 19 yes Figure 17 A schematic top view of the peripheral wall component 20. Figure 20 It means Figure 19 An enlarged three-dimensional view of the structure of the first gas flow path 25. Figure 17 , Figure 18 and Figure 19 Peripheral wall component 20 and Figure 1 , Figure 2 and Figure 3 The peripheral wall component 20 differs in the following aspects.

[0177] like Figure 17 , Figure 18 and Figure 19 As shown, a first gas flow path 25 and a second gas flow path 26 are formed inside the peripheral wall component 20. Figure 20 As shown, the first gas flow path 25 includes an upstream flow path section 25A and a downstream flow path section 25B, and has an L-shaped cross-section.

[0178] Specifically, the upstream flow path 25A extends horizontally inward from the lower part of the outer side of the peripheral wall member 20. The downstream flow path 25B extends vertically upward from the inner end of the upstream flow path 25A to the upper end face 23 of the peripheral wall member 20. The outer end of the upstream flow path 25A becomes the upstream end 25a of the first gas flow path 25. The upper end of the downstream flow path 25B becomes the downstream end 25b of the first gas flow path 25.

[0179] A pipe 51a is connected to the upstream end 25a of the first gas flow path 25. In this case, the inert gas supplied from the pipe 51a to the upstream end 25a of the first gas flow path 25 is guided horizontally from the outside to the inside within the upstream flow path section 25A. Then, the inert gas is supplied from below to above within the downstream flow path section 25B and ejected upwards from the downstream end 25b of the first gas flow path 25.

[0180] A bottomed first opening 27 is formed on the upper end surface 23 of the peripheral wall member 20, connecting the first gas flow path 25 to the processing space 20S. Specifically, the first opening 27 has a first side surface 27a and a second side surface 27b facing each other across the space above the downstream end 25b of the first gas flow path 25. The distance between the first side surface 27a and the second side surface 27b gradually increases from the downstream end 25b of the first gas flow path 25 toward the processing space 20S. In this example, the first and second side surfaces 27a and 27b are planar, but the implementation is not limited to this. The first and second side surfaces 27a and 27b may be, for example, curved.

[0181] A collision surface 29 is provided above the downstream end 25b of the first gas flow path 25 for the inert gas ejected to the first opening 27 to collide with it. The collision surface 29 is located above the upper surface of the substrate W, which is supported by a plurality of support members 38 during exposure. In this example, Figure 17 The bottom wall portion 11a of the housing 11 of the light emitting part 10 is used as the collision surface 29.

[0182] Inert gas ejected from the downstream end 25b of the first gas flow path 25 collides with the collision surface 29 and is guided to the first and second sides 27a, 27b of the first opening 27 and supplied to the processing space 20S. In this case, as... Figure 19 As indicated by the arrow, the inert gas diffuses within the processing space 20S in a manner that expands in the horizontal plane. This allows for the uniform supply of inert gas to the space between the light emitting section 10 and the substrate W within the processing space 20S in a short time.

[0183] Figure 21 It means Figure 19An enlarged three-dimensional view of the structure of the second gas flow path 26. (See image below.) Figure 21 As shown, a bottomed second opening 28 is formed on the upper end surface 23 of the peripheral wall component 20, which connects the second gas flow path 26 to the processing space 20S. In this example, the first opening 27 and the second opening 28 face each other across the processing space 20S (see reference). Figure 19 ).

[0184] The second opening 28 has a third side surface 28a and a fourth side surface 28b facing each other across a space above the upstream end 26a of the second gas flow path 26. The distance between the third side surface 28a and the fourth side surface 28b gradually decreases from the processing space 20S toward the downstream end 25b of the second gas flow path 26. In this example, the third and fourth side surfaces 28a and 28b are formed as planes, but the implementation is not limited to this. The third and fourth side surfaces 28a and 28b may be formed as, for example, curved surfaces.

[0185] and, Figure 17 The bottom wall portion 11a of the housing 11 of the light emitting section 10 is located above the upstream end 26a of the second gas flow path 26. Through Figure 17 The gas exhaust system 52 operates, and the ambient gas in the processing space 20S is guided from the upstream end 26a into the second gas flow path 26 along the bottom wall 11a of the housing 11 and the third and fourth sides 28a and 28b of the second opening 28.

[0186] The second gas flow path 26 includes an upstream flow path portion 26A and a downstream flow path portion 26B, and has an L-shaped cross-section. Specifically, the upstream flow path portion 26A extends vertically downward from the upper end face 23 of the peripheral wall member 20. The downstream flow path portion 26B extends horizontally from the lower end of the upstream flow path portion 26A to the outer side of the peripheral wall member 20. The upper end of the upstream flow path portion 26A becomes the upstream end 26a of the second gas flow path 26. The outer end of the downstream flow path portion 26B becomes the downstream end 26b of the second gas flow path 26.

[0187] A pipe 52a is connected to the downstream end 26b of the second gas flow path 26. In this case, the inert gas from the second opening 28 is guided from the upper upstream end 26a to the lower downstream end 26a within the upstream flow path 26A. Then, the inert gas is guided horizontally from the inside to the outside within the downstream flow path 26B and discharged into the pipe 52a. As a result, it is easier to form an inert gas flow within the processing space 20S. Therefore, the time required for uniformly replacing the ambient gas on the substrate W of the processing space 20S can be shortened.

[0188] Figure 20 First side 27a, second side 27b Figure 21The height of the third side 28a and the fourth side 28b is, for example, greater than 1 mm and less than 10 mm, preferably greater than 1 mm and less than 5 mm. In this example, the height of the first side 27a, the second side 27b, the third side 28a and the fourth side 28b of the peripheral wall member 20 is 2 mm.

[0189] [3] Basic operation of the exposure device 100 during exposure processing

[0190] In the exposure apparatus 100 of the second embodiment, the substrate W is irradiated with vacuum ultraviolet light within a processing space where the oxygen concentration above the substrate W is maintained at a low level for 20 seconds. The basic operation of the exposure apparatus 100 during the exposure process will be described below.

[0191] Figures 22-27 This is a schematic side view illustrating the basic operation of the exposure apparatus 100 according to the second embodiment during exposure processing. First, [the following is a description of the process]. Figures 22-24 The operation of the exposure device 100 shown. Figures 22-24 The actions shown are all related to, except for the following aspects. Figures 4-6 The actions shown are the same.

[0192] like Figure 24 As shown, with the processing space sealed for 20 seconds, as indicated by the dashed arrow, inert gas flows from... Figure 17 The gas supply system 51 supplies gas to the first opening 27 through the first gas flow path 25. Therefore, the inert gas ejected from the downstream end 25b of the first gas flow path 25 collides with the collision surface 29. Through this collision with the collision surface 29, the flow direction of the inert gas changes from vertical to horizontal. Then, the inert gas flows along... Figure 19 The first side 27a and the second side 27b of the first opening 27 are supplied to the processing space 20S along the collision surface 29.

[0193] Furthermore, the ambient gas within the processing space 20S passes through the second opening 28 and the second gas flow path 26 and utilizes... Figure 17 The gas exhaust system 52 discharges the gas to the outside of the exposure apparatus 100. As a result, the ambient gas in the processing space 20S is gradually replaced by inert gas, and the oxygen concentration in the processing space 20S decreases.

[0194] Then, proceed Figures 25-27 The actions shown. Figures 25-27 The actions shown are Figures 7-9 The actions shown are the same.

[0195] [4] A series of processes performed by the control unit 60 during exposure processing

[0196] use Figure 17The series of processes performed by the control unit 60 of the exposure apparatus 100 in the second embodiment shown are as follows: Figure 10 and Figure 11 The series of processes shown are the same.

[0197] [5] Examples and Comparative Examples

[0198] In Examples 1 and 2, the peripheral wall component 20 of the second embodiment was used to simulate the uniform replacement of the ambient gas in the processing space 20S with nitrogen. In Comparative Example 1, the peripheral wall component 20 of the second embodiment was used. Figure 3 The peripheral wall component 20A shown is used to simulate the uniform replacement of the ambient gas in the processing space for 20 seconds with nitrogen. The nitrogen flow rate, nitrogen supply time, and post-replacement oxygen concentration were compared in the simulation. Furthermore, the nitrogen supply and discharge were performed simultaneously, with the nitrogen supply amount equal to the amount of ambient gas discharged from the processing space for 20 seconds.

[0199] like Figure 3 As shown, the peripheral wall component 20 of the comparative example does not include the first opening 27 and the second opening 28. In addition, the thickness, height and inner diameter D2 of the peripheral wall component 20A are the same as those of the peripheral wall component 20 of Embodiment 1 and Embodiment 2.

[0200] Figure 28 This is a graph showing the comparison results of Example 1, Example 2, and Comparative Example 1. (See figure below.) Figure 28 As shown, in Example 1, when the supplied nitrogen flow rate was 10 L / min, the oxygen concentration in the processing space was less than 1% after 19 seconds and 20 seconds. In Example 2, when the supplied nitrogen flow rate was 13 L / min, the oxygen concentration in the processing space was less than 1% after 13 seconds and 20 seconds. On the other hand, in Comparative Example 1, when the supplied nitrogen flow rate was 9 L / min, the oxygen concentration in the processing space was 6% after 20 seconds and 20 seconds.

[0201] Based on the comparison results of Example 1, Example 2 and Comparative Example 1, it was confirmed that by using the peripheral wall component 20 of the second embodiment, the time required for uniform replacement can be shortened and the oxygen concentration can be reduced sufficiently.

[0202] [6] Effects

[0203] (1) In the exposure apparatus 100 of the second embodiment, the inert gas reaches the downstream end 25b through the first gas flow path 25 formed on the peripheral wall member 20. The inert gas supplied from the downstream end 25b to the first opening 27 collides with the collision surface 29 above the substrate W and flows into the processing space 20S along the first side surface 27a and the second side surface 27b. In this case, the ambient gas between the emission surface 13S and the substrate W can be uniformly replaced. Moreover, it is not necessary to replace the ambient gas in the entire processing space 20S. Therefore, the replacement time can be shortened. As a result, the efficiency and accuracy of the exposure process can be improved.

[0204] (2) In the exposure apparatus 100 of the second embodiment, the peripheral wall member 20 has a cylindrical shape. In this case, there are no corners where gas can be trapped within the processing space 20S formed by the cylindrical peripheral wall member 20. Therefore, when the ambient gas in the processing space 20S is replaced with an inert gas, a smooth gas flow is formed along the inner peripheral surface of the peripheral wall member 20. As a result, the time required for replacement can be shortened and the inert gas used in the replacement can be suppressed.

[0205] (3) In the exposure apparatus 100 of the second embodiment, the peripheral wall member 20 has a second gas flow path 26 for discharging ambient gas from the processing space 20S. In this case, by discharging the ambient gas from the processing space 20S using the gas discharge system 52, it is easier to form an inert gas flow within the processing space 20S. Therefore, the time required to uniformly replace the ambient gas on the substrate W in the processing space 20S can be shortened.

[0206] (4) As described above, by setting a portion of the lower surface of the light emitting portion 10 covering the upper opening 21 of the peripheral wall component 20, namely the bottom wall portion 11a, as the collision surface 29, it is not necessary to set the collision surface 29 separately. Therefore, the manufacturing cost of the exposure device can be suppressed.

[0207] (5) In the exposure apparatus 100 of the second embodiment, the lower cover member 30 moves to the cover-open position pa1 below the processing space 20S when the substrate W is moved into and out of the processing space 20S. This allows for easy transfer of the substrate W between the outside of the exposure apparatus 100 and the front end member 41a of the substrate support mechanism 40. Furthermore, when the substrate W is exposed, the lower cover member 30 moves to the upper cover-closed position pa2. This allows for easy closure of the lower opening 22.

[0208] (6) In the exposure apparatus 100 of the second embodiment, a plurality of support members 38 are disposed on the upper surface 31 of the lower cover member 30. In this case, the plurality of support members 38 move together with the lower cover member 30 in the vertical direction. As a result, the substrate W can be placed on the plurality of support members 38 from outside the exposure apparatus 100 below the processing space 20S. Moreover, when the substrate W is exposed, the substrate W approaches the exit surface 13S by moving the plurality of support members 38 upward. As a result, the efficiency of the exposure processing of the substrate W can be further improved.

[0209] [7] Includes Figure 17 The substrate processing apparatus of the exposure apparatus 100

[0210] include Figure 17 In the configuration and operation of the substrate processing apparatus 200 of the exposure apparatus 100, in addition to using Figure 17 The exposure device 100 is used to replace Figure 1 Apart from the exposure device 100, all are with Figure 15 The substrate processing apparatus 200 has the same configuration and operation. In this case, the exposure apparatus 100 according to the second embodiment can improve the efficiency of the exposure process with a simple and compact configuration without reducing the cleanliness of the substrate W. In this case, the processing accuracy of the substrate W can be improved, and the manufacturing cost of the substrate W can be reduced.

[0211] [8] Other implementation methods

[0212] (1) The exposure apparatus 100 of the second embodiment is provided with a second gas flow path 26 for discharging ambient gas in the processing space 20S, but the present invention is not limited thereto.

[0213] For example, multiple exhaust ports may be provided at positions opposite to each other across the processing space 20S in the first gas flow path 25 and its downstream end 25b. In this case, by discharging the ambient gas in the processing space 20S through multiple exhaust ports, it is easier to form an inert gas flow within the processing space 20S. Therefore, the time required for uniformly replacing the ambient gas on the substrate W of the processing space 20S can be shortened.

[0214] (2) In the exposure apparatus 100 of the second embodiment, the first gas flow path 25 and the second gas flow path 26 have an L-shaped cross section, but the present invention is not limited thereto.

[0215] For example, the first gas flow path 25 and the second gas flow path 26 may be formed by a hole that extends vertically from the lower part of the peripheral wall member 20.

[0216] (3) The exposure apparatus 100 of the second embodiment is provided with a second opening 28 and a second gas flow path 26, but the present invention is not limited thereto.

[0217] For example, it can be like Figure 3 As shown in the second gas flow path 26, it is formed by a through hole extending from the outer peripheral surface of the peripheral wall member 20 to the inner peripheral surface.

[0218] (4) In the exposure apparatus 100 of the second embodiment, a portion of the lower surface of the light emitting portion 10 covering the upper opening 21 of the peripheral wall member 20, namely the bottom wall portion 11a, is provided as the collision surface 29, but the present invention is not limited thereto.

[0219] For example, a portion of the peripheral wall component 20 may be formed on the upper surface of the first opening 27. In this case, by setting a portion within the peripheral wall component 20 as the collision surface 29, it is not necessary to separately provide the collision surface 29. Therefore, the manufacturing cost of the exposure apparatus 100 can be suppressed.

[0220] (5) In the exposure apparatus 100 of the second embodiment, the determination of whether the oxygen concentration in the processing space 20S during the exposure process has decreased to the target oxygen concentration is based on the output of the oxygen concentration meter 52b, but the present invention is not limited thereto.

[0221] For example, if the time required for the oxygen concentration in the processing space to reach the target oxygen concentration (hereinafter referred to as the concentration attainment time) from the point when the lower opening 22 is closed is known, the determination can be made based on the concentration attainment time. In this case, the oxygen concentration meter 52b is not required, and the configuration of the exposure apparatus 100 becomes simple.

[0222] (6) In the exposure apparatus 100 of the second embodiment, the exposure process is performed with the substrate W housed in the processing space 20S supported by a plurality of support members 38 mounted on the lower cover member 30, but the present invention is not limited thereto. The substrate support mechanism 40 may also be configured to be movable in the vertical direction instead of mounting a plurality of support members 38 on the lower cover member 30. Figure 29 This is a schematic cross-sectional view showing the configuration of the exposure apparatus 100 in other embodiments. Figure 29 Exposure device 100 and Figure 17 The difference between the exposure device 100 and the previous one is that it does not have multiple receiving tubes 33 and support components 38, but instead has a lifting drive unit 54. Figure 29 The lower cover component 30, substrate support mechanism 40, lifting drive unit 53 and lifting drive unit 54 are in the middle. Figure 16 The lower cover component 30, substrate support mechanism 40, lifting drive unit 53 and lifting drive unit 54 have the same structure and operation.

[0223] (7) In the exposure apparatus 100 of the second embodiment, a front end member 41a is provided in the substrate support mechanism 40 to seal the processing space 20S, but the present invention is not limited thereto. For example, if the sealing of the processing space 20S is not required to be extremely high, the front end member 41a may not be provided in the substrate support mechanism 40.

[0224] [9] Correspondence between the constituent elements of the claims and the constituent elements of the embodiments

[0225] Hereinafter, examples of the correspondence between each constituent element of the claims and each element of the embodiments will be described. In the second embodiment, the support member 38 is an example of a substrate support, the first gas flow path 25 is an example of a flow path, the gas exhaust system 52 is an example of an exhaust section, the bottom wall portion 11a of the light emitting section 10 is an example of a portion of the lower surface of the light emitting section, the lower cover member 30 is an example of a closing member, the cover open position pa1 is an example of a first position, and the cover closed position pa2 is an example of a second position.

[0226] Other elements having the structure or function described in the claims can also be used as constituent elements of the claims.

Claims

1. An exposure apparatus which exposes a substrate and includes: a peripheral wall member which forms a processing space capable of housing the substrate and has an upper opening; a light exit portion which covers the upper opening and has an exit surface capable of emitting vacuum ultraviolet rays; and a substrate support portion which supports the substrate in the processing space below the light exit portion at the time of exposure by the light exit portion; the peripheral wall member has a flow path which guides an inert gas from below to above and an opening portion which communicates the flow path with the processing space, the opening portion has a first side surface and a second side surface which face each other, a distance between the first side surface and the second side surface gradually increases from a downstream end portion of the flow path toward the processing space, and a collision surface on which the inert gas flowing out from the downstream end portion of the flow path collides is provided, the collision surface being located more upward than the substrate supported by the substrate support portion at the time of exposure.

2. The exposure apparatus according to claim 1, wherein the peripheral wall member has a cylindrical shape.

3. The exposure apparatus according to claim 1 or 2, wherein the peripheral wall member includes an exhaust portion which exhausts ambient gas of the processing space.

4. The exposure apparatus according to claim 1 or 2, wherein the collision surface includes a part of a lower surface of the light exit portion.

5. The exposure apparatus according to claim 1 or 2, wherein the collision surface is provided in the peripheral wall member.

6. The exposure apparatus according to claim 1 or 2, wherein a lower opening is formed in the peripheral wall member, the exposure apparatus further includes: a closing member which is configured to be capable of closing and opening the lower opening; and a lift drive portion which controls the closing member in such a manner that the closing member moves to a first position located below the lower opening at the time of handover of the substrate between the outside and the substrate support portion and moves to a second position which closes the lower opening at the time of exposure of the substrate.

7. The exposure apparatus according to claim 6, wherein the substrate support portion is provided on an upper surface of the closing member. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​

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