L-shaped plasma confinement ring for plasma chamber

Abstract

A plasma confinement ring for a plasma chamber comprises an annular element and a cylindrical element. The annular element surrounds a substrate support assembly in the plasma chamber and is arranged along a plane where a substrate placed on the substrate support assembly in the plasma chamber is located, and the annular element comprises a plurality of holes. The cylindrical element of the plasma confinement ring extends from an outer edge of the annular element in a direction perpendicular to the plane where the substrate placed on the substrate support assembly in the plasma chamber is located. The plasma confinement ring is a single piece.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Patent Application No. 16 / 057,226 filed on August 7, 2018. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates generally to plasma chambers for processing semiconductor substrates and, more particularly, to L-shaped plasma confinement rings for use in plasma chambers. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] The substrate processing system is used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, dielectric etching, rapid thermal processing (RTP), ion implantation, physical vapor deposition (PVD), and / or other etching, deposition, or cleaning processes. The substrate can be arranged on a substrate support in a processing chamber of the substrate processing system, such as a pedestal, an electrostatic chuck (ESC), etc. During processing, a gas mixture can be introduced into the processing chamber, and a plasma can be used to initiate and maintain a chemical reaction.

[0006] The processing chamber includes various components, including but not limited to a substrate support, a gas distribution device (e.g., a showerhead, which may also correspond to an upper electrode), a plasma confinement ring or shield, etc. The substrate support may include a ceramic layer configured to support a wafer. For example, the wafer may be clamped to the ceramic layer during processing. The substrate support may include an edge ring that is configured around the exterior of the substrate support (e.g., outside and / or adjacent to the periphery). The edge ring may be provided to modify the plasma sheath above the substrate, optimize substrate edge processing performance, protect the substrate support from plasma-induced corrosion, etc. A plasma confinement shield may be configured around each of the substrate support and the showerhead to confine the plasma to a volume above the substrate. Summary of the invention

[0007] A plasma confinement ring for a plasma chamber comprises an annular element and a cylindrical element. The annular element surrounds a substrate support assembly in the plasma chamber and is arranged along a plane where a substrate placed on the substrate support assembly in the plasma chamber is located, and the annular element comprises a plurality of holes. The cylindrical element of the plasma confinement ring extends from an outer edge of the annular element in a direction perpendicular to the plane where the substrate placed on the substrate support assembly in the plasma chamber is located. The plasma confinement ring is monolithic.

[0008] In other features, the plasma confinement ring further includes a plurality of threaded holes at a distal end of the cylindrical element to receive screws for attaching the cylindrical element to a component of the plasma chamber.

[0009] In another feature, the component includes an electrode (upper electrode) of the plasma chamber.

[0010] In another feature, the annular element, the substrate support assembly, and an electrode (upper electrode) coupled to a distal end of the cylindrical element define a volume in the plasma chamber in which plasma is confined during processing of the substrate in the plasma chamber.

[0011] In another feature, the outer diameters of the cylindrical element and the electrode (the upper electrode) are equal.

[0012] In another feature, the cylindrical element is a cylindrical wall with a thickness of 3-30 mm and a height of 10-100 mm.

[0013] In yet other features, a system includes the plasma confinement ring and a first electrode (lower electrode) and a second electrode (upper electrode) of the plasma chamber. The first electrode is disposed in the substrate support assembly. The first electrode is configured to be parallel to the plane where the substrate is placed on the substrate support assembly. The annular element surrounds the first electrode. The second electrode is configured to be at a height from the first electrode and parallel to the first electrode. The second electrode extends radially outward along the plane toward the cylindrical element and can be connected to a distal end of the cylindrical element.

[0014] In another feature, the outer diameters of the cylindrical element and the second electrode are equal.

[0015] In another feature, the hole is a radially extending slot extending from an inner region near an inner edge of the annular element to an outer region near an outer edge of the annular element.

[0016] In another feature, the holes are formed using an abrasive water jet cutting process.

[0017] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0019] Figure 1 shows a partial cross-sectional view of a plasma processing chamber;

[0020] Figure 2A and 2B Shows Figure 1 An example of a C-shaped plasma confinement ring or shield used in a plasma processing chamber;

[0021] Figure 3A The invention is shown for use according to the present disclosure Figure 1 An L-shaped confinement ring within a plasma processing chamber;

[0022] Figure 3B The invention shows the use of the method according to the present disclosure for Figure 1 A C-shaped shield formed by an L-shaped confinement ring in a plasma processing chamber;

[0023] Figure 4A and 4B Examples of embodiments are shown, which are used according to the present disclosure Figure 1 An L-shaped confinement ring within a plasma processing chamber;

[0024] Figure 5 showing a cross-sectional view and a top view of the L-shaped confinement ring and a method of cutting a slot or hole in the L-shaped confinement ring using an abrasive water jet nozzle according to the present disclosure; and

[0025] Fig. 6A and 6B 3 and 3B show more views of the L-shaped confinement ring shown in FIG. 3, and the L-shaped confinement ring is used in accordance with the present disclosure Figure 5 Made by the method shown.

[0026] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0027] The processing chamber of the substrate processing system may include a plasma confinement ring or shield. The shield can be configured to confine the plasma and other reactants to a desired area in the processing chamber. For example, the shield can be positioned around the substrate support and the upper electrode to confine the plasma to a volume above the substrate and below the upper electrode.

[0028] Typically, the plasma confinement shield is C-shaped and is machined from a block of polysilicon. Slits or holes (hereinafter collectively referred to as holes) are made in the lower portion of the C-shaped plasma confinement shield to vent gas from the plasma confinement region within the C-shaped shield. During the manufacturing process, extra care is required to protect the upper portion and vertical sidewalls of the C-shaped plasma confinement shield.

[0029] The present disclosure proposes an L-shaped confinement ring or shield to replace the C-shaped plasma confinement shield. There is no upper portion in the L-shaped confinement ring. Therefore, holes can be made in the lower portion of the L-shaped confinement ring using any suitable method and without any protective measures.

[0030] Thus, as described in further detail below, the L-shaped confinement ring provides flexibility in the choice of processes that can be used to make the apertures (e.g., radial slots). In addition, the L-shaped confinement ring provides easy maintainability (i.e., the L-shaped confinement ring can be easily replaced when worn out from use). The L-shaped (relative to the C-shaped) shape provides significant cost savings in the time and materials required to make the L-shaped confinement ring and the apertures therein due to the flexibility of process selection and ease of maintainability.

[0031] The present disclosure is organized as follows. Figure 1 An example of a plasma processing chamber utilizing a C-shaped confinement shield is described. Figure 2A and 2B To further illustrate and describe the C-shaped restraint shield. Figure 3A and 3B To show and explain an L-shaped restraining ring according to the present disclosure. Figure 4A and 4B To illustrate Figure 1 An example of an embodiment utilizing an L-shaped confinement ring in a plasma processing chamber. Figure 5 A method for making a hole in an L-shaped confinement ring according to the present disclosure is shown and described. Fig. 6A and 6B An example of different views of an L-shaped restraint ring according to the present disclosure is shown in . Throughout the present disclosure, the terms shield and restraint are used synonymously and interchangeably.

[0032] Figure 1A partial cross-sectional view of a plasma processing chamber (plasma chamber) 100 is shown. The plasma chamber 100 can be used to perform etching, deposition, and / or other suitable substrate processing using RF plasma. The plasma chamber 100 includes a substrate support assembly 102, an upper electrode including a central electrode plate (central electrode or inner electrode) 104 and an annular outer electrode (outer electrode) 106, and a confinement ring 108. The outer electrode 106 surrounds the outer edge of the inner electrode 104. For simplicity, throughout this disclosure, the inner electrode and the outer electrode shown in all figures are collectively referred to as the upper electrode. For example, the upper electrode of the plasma chamber 100 includes the inner electrode 104 and the outer electrode 106, and is therefore collectively referred to as the upper electrodes 104, 106. During processing, a semiconductor substrate (not shown) is supported on the substrate support assembly 102.

[0033] The confinement ring 108 extends outward from the outer electrode 106. The confinement ring 108 includes a horizontal upper section (upper portion) 108a extending inward toward the outer electrode 106, and a vertical section (side portion) 108b extending downward from the outer end of the upper section 108a, and a horizontal lower section (lower portion) 108c extending inward from the lower end of the side portion 108b. The lower portion 108c includes a plurality of radially extending slots through which process gases and reaction byproducts are exhausted from the plasma chamber 100. The confinement ring 108 may include a slot ring 110 below the lower portion 108c. The slot ring 110 may be rotatable and vertically movable relative to the lower portion 108c to adjust the flow of process gases and reaction byproducts through the radially extending slots.

[0034] The substrate support assembly 102 includes a movable ground ring 112, a lower electrode 114, and an electrostatic chuck (ESC) 116 on which a semiconductor substrate is electrostatically clamped. The substrate support assembly 102 includes an edge ring 118 surrounding the ESC 116, the edge ring 118 having a surface exposed to the plasma. The substrate support assembly 102 includes a dielectric ring 120 surrounding the edge ring 118, the dielectric ring 120 having a surface exposed to the plasma. The substrate support assembly 102 includes an insulating ring 122 located below the edge ring 118. The substrate support assembly 102 includes a fixed ground ring 124 made of a conductive material located below the dielectric ring 120. A portion 124a of the fixed ground ring 124 surrounds the insulating ring 122. The movable ground ring 112 is supported on a compressible plunger 126, and the compressible plunger 126 is supported on a portion 124b of the fixed ground ring 124. The movable ground ring 112 moves vertically relative to the fixed ground ring 124 to make electrical contact with the confinement ring 108. The substrate support assembly 102 is supported on an electrically grounded bias housing 128.

[0035] In the plasma chamber 100, the confinement ring 108 is C-shaped and is arranged in the form of a shield around the upper electrodes 104, 106 and the substrate support assembly 102 to confine the plasma in the processing volume or plasma region 130. Therefore, the confinement ring 108 is also referred to as a C-shaped confinement ring 108 or a C-shaped shield 108. In some examples, the confinement ring 108 includes a semiconductor material, such as silicon (Si) or polycrystalline silicon. The confinement ring 108 may include one or more holes (e.g., radial slits) configured to allow gas to flow out of the plasma region 130 to be exhausted from the plasma chamber 100.

[0036] Figure 2A A cross section of confinement ring 108 is shown. Confinement ring 108 includes an inner surface 108d facing the plasma and an outer surface 108e not facing the plasma. Confinement ring 108 may include one or more holes 108f (eg, holes or radial slits) to allow gas to vent from plasma region 130 within confinement ring 108.

[0037] Figure 2B The restraint ring 108 is shown in more detail. The restraint ring 108 is annular. The restraint ring 108 is C-shaped and includes an upper portion 108a, a side portion 108b, and a lower portion 108c. The lower portion 108c includes a hole 108f. The upper portion 108a extends to Figure 1 The upper electrodes 104, 106 are shown.

[0038] The C-shape of confinement ring 108 brings various problems. For example, confinement ring 108 is difficult to manufacture. Specifically, confinement ring 108 is difficult to manufacture from single crystal silicon because manufacturing confinement ring 108 requires very large crystals, is very expensive, and requires extensive processing of very hard materials.

[0039] Additionally, it is difficult to create hole 108f in lower portion 108c of confinement ring 108 because upper portion 108a of confinement ring 108 needs to be protected from the process of creating hole 108f. Without protection, upper portion 108a of confinement ring 108 (in the area indicated by 108g) may be damaged when hole 108f is created in lower portion 108c.

[0040] The time and expense required to implement protective measures limits the types of processes that can be used to create holes 108f in lower portion 108c of confinement ring 108. The need for protective measures and the constraints on available processes make the process of forming holes in confinement ring 108 very complex, time consuming, expensive, and therefore less attractive from a manufacturing perspective. In addition, confinement ring 108 is difficult to replace after it has worn out from use.

[0041] Figure 3AAn L-shaped confinement ring 400 is shown in accordance with the present disclosure. L-shaped confinement ring 400 includes side portions (or cylindrical walls) 400-1 and a lower (annular) portion 400-2. L-shaped confinement ring 400 does not include an upper portion similar to upper portion 108a of C-shaped confinement ring 108.

[0042] In L-shaped confinement ring 400, not having an upper portion similar to upper portion 108a of C-shaped confinement ring 108 has a number of advantages. For example, less silicon is required to manufacture L-shaped confinement ring 400 than to manufacture C-shaped confinement ring 108. In addition, L-shaped confinement ring 400 allows the plurality of holes 402 in lower (annular) portion 400-2 to be manufactured using nearly any process. Furthermore, L-shaped confinement ring 400 is easier to replace than C-shaped confinement ring 108 (as explained below).

[0043] Therefore, L-shaped confinement ring 400 is flexible in manufacturing and easy to maintain because it does not include an upper portion similar to upper portion 108a of C-shaped confinement ring 108. These advantages greatly save time, materials and costs required for manufacturing and maintenance.

[0044] Figure 3B A C-shaped shield formed using an L-shaped confinement ring 400 and an upper electrode with an extended outer portion is shown in accordance with the present disclosure. The C-shaped shield includes an upper portion, i.e., an enlarged upper electrode including an inner electrode 404 and an outer electrode 406, and an L-shaped lower portion, i.e., the L-shaped confinement ring 400. The combination of the inner electrode 404 and the outer electrode 406 may generally be referred to as an upper electrode or an upper electrode with an outer portion.

[0045] L-shaped confinement ring 400 includes a lower ring (i.e., lower portion 400-2 having a plurality of holes 402) and a cylindrical wall (i.e., side portion 400-1). Lower ring 400-2 and cylindrical wall 400-1 are integrally formed. That is, L-shaped confinement ring 400 is a single piece. Cylindrical wall 400-1 extends vertically or perpendicularly upward from the outer edge of lower ring 400-2. In a plasma chamber (e.g., plasma chamber 100), lower ring 400-2 is arranged along a plane 401 in which a substrate is arranged on a substrate support assembly in the plasma chamber.

[0046] At the distal (upper) end of cylindrical wall 400-1, confinement ring 400 includes a hole 408 for connection to an outer electrode 406 extending radially outward from inner electrode 404. Hole 408 may include threads for receiving a screw through a hole 409 in outer electrode 406, with outer electrode 406 being secured to L-shaped confinement ring 400 by the screw.

[0047] Note that L-shaped confinement ring 400 does not include an upper portion similar to upper portion 108a of C-shaped confinement ring 108. Figure 1 extends as shown to upper electrodes 104, 106. Instead, as Figure 3B shown, an external electrode 406 (similar to Figure 1 element 106) extends from an internal electrode 404 (similar to Figure 1 element 104) to the upper end of the side portion (i.e., the cylindrical wall) 400-1 of the L-shaped constraint ring 400. Accordingly, the present disclosure proposes using the internal electrode 404, the external electrode 406, and the L-shaped constraint ring 400 to replace Figure 1 the upper electrodes 104, 106 and the C-shaped constraint ring in the plasma chamber 100 of

[0048] Figure 4A and 4B show examples of embodiments using an L-shaped constraint ring in the plasma chamber 100 according to the present disclosure. Note that these figures are not formal mechanical drawings. Instead, these drawings are simplified partial schematic views that are used to illustrate the use of an L-shaped constraint ring in the plasma chamber 100 of Figure 1 according to the present disclosure. To further simplify the illustration, some of the schematic views only provide a view of the left side of the plasma chamber 100. Although not shown, it should be understood that the structure on the right side of the plasma chamber 100 is similar. Figure 1 In the first embodiment shown in

[0049] Figure 4A Figure 4A , the horizontal upper part 108a is separate (i.e., different) from the L-shaped constraint ring 400 and can be attached to the L-shaped constraint ring 400 as shown. In addition, the horizontal upper part 108a projects inwardly towards the external electrode 106 but not as far as the lower horizontal part of the L-shaped constraint ring 400 (i.e., y < x), and contacts the outer edge of the external electrode 106.

[0050] Figure 4B In

[0051] shown second embodiment, the horizontal upper part (shown as element 108a + 106) is a single component including both elements 108a and 106. That is, element 108a is part of the whole of element 106 or is integrated with component 106. The element (108a + 106) can be referred to as the external electrode part of the upper electrodes 104, 106. The element (i.e., the external electrode) 108a + 106 is separate (i.e., different) from the L-shaped constraint ring 400 and can be attached to the L-shaped constraint ring 400 as shown. In addition, the element 108a + 106 projects further inwardly towards the internal electrode 104 than the lower horizontal part of the L-shaped constraint ring 400 (i.e., z > x) and contacts the outer edge of the internal electrode 104.

[0051] The L-shape of confinement ring 400 provides the following advantages. First, L-shaped confinement ring 400 is cheaper and easier to manufacture than C-shaped confinement ring 108. Specifically, due to the L-shape, L-shaped confinement ring 400 uses less silicon than C-shaped confinement ring 108, thereby reducing the cost of L-shaped confinement ring 400 relative to C-shaped confinement ring 108. In addition, due to the L-shape, hole 402 can be cut by water jet cutting, which is much faster than other processes (such as laser cutting).

[0052] Note that since there are no components (e.g., upper portion 108a of C-shaped containment ring 108) that are opposed to the water jet flow, an abrasive water jet cutting process can be used to form hole 402 that would otherwise be damaged as described above. Additionally, since there are no components opposed to the water jet flow, expensive and time-consuming protective measures are not required when forming hole 108f in C-shaped containment ring 108 when forming hole 108f.

[0053] Second, the L-shaped confinement ring 400 is the part of the plasma chamber that wears the most. The L-shaped confinement ring 400 can be replaced without also replacing the upper portion (e.g. Figure 3B The external electrode 406 or Figure 4A and 4B Alternatively, outer electrode 406 (or element 108a or 108a+106) may be removed from L-shaped confinement ring 400 while replacing L-shaped confinement ring 400, and may be reattached to a replacement L-shaped confinement ring 400 and reused in plasma chamber 100.

[0054] L-shaped confinement ring 400 having a plurality of holes 402 for plasma confinement and exhaust can be secured to the upper electrode (i.e., outer electrode 406, which is an extension of inner electrode 404) (or to element 108a or 108a+106) by bolts passing through threaded holes 408. Holes 402 (which may include holes or radial slots) can be made using a high-speed and high-precision waterjet process, which is much faster than conventional methods using laser or electrical discharge machining processes.

[0055] L-shaped confinement ring 400 may be manufactured using CNC. Holes 402 may be manufactured using a grinding water jet. Due to the L-shape, when making holes in lower portion 400-2, there is no upper portion (e.g., upper portion 108a of C-shaped confinement ring 108) that requires protection. When making hole 108f in lower portion 108c, bottom surface 108g of upper portion 108a of C-shaped confinement ring 108 requires protection, and L-shaped confinement ring 400 does not have an upper portion similar to upper portion 108a. Therefore, the L-shaped design eliminates the need for protective measures that are typically used when using C-shaped confinement ring 108, and the L-shape enables a simpler, faster, and cheaper process for making gaps or holes.

[0056] High precision holes 402 can be cut directly, which greatly reduces the cutting time by more than about 83% compared to EDM and more than about 75% compared to laser processing. L-shaped confinement ring 400 can be easily installed (and separated from it after wear) to the upper electrode (here, outer electrode 406 or element 108a or 108a+106) using threaded holes 408 and bolts.

[0057] Figure 5 A cross-sectional view 500 and a top view 502 of an L-shaped confinement ring 400 are shown, along with a method by which an abrasive water jet nozzle can cut a hole 402 from the side with a hub. In the specially designed two-path cutting method shown, the nozzle moment direction in the two straight sections is away from the center of the L-shaped confinement ring 400. Therefore, the jet lag is toward the center of the L-shaped confinement ring 400, so that the L channel wall is not damaged by the jet lag. In addition, the water pressure can be set to a maximum (e.g., 60 ksi) to obtain the best surface finish of the hole wall.

[0058] Specifically, the abrasive water jet cutting starts from the guide hole on the lower (annular) portion 400-2 of the L-shaped confinement ring 400 and includes a two-path cutting process. The cutting path sequence of the two-path cutting process is determined by Figure 5 They are numbered 1 to 4 in the table.

[0059] Number 1 shows the start of the two-path cutting process from the pilot hole, with the cutting path advancing slightly toward the hub ID. Number 2 shows cutting the northern (upper) portion of the semicircle at the hub ID, followed by a straight cut, with the final cut terminating at the intersection of the straight portion and the semicircle at the hub OD. Number 3 shows returning to the pilot hole with the water cut off (i.e., no cutting). Number 4 shows cutting the southern (lower) portion of the semicircle at the hub ID, followed by a straight cut, and then cutting the semicircle at the hub OD.

[0060] During the cutting of each hole, the center portion is isolated as the water jet moves around the hole 402. When the cutting of each hole is completed at the second end point of the cutting process (i.e., the end of number 4), the isolated center portion automatically falls into the water tank of the abrasive water jet machine. This simplifies the post-water jetting processing of the hole 402, which includes CNC machining and cleaning of the hole 402, thereby increasing production.

[0061] Fig. 6A and 6B Shows the use Figure 5 Additional views of L-shaped confinement ring 400 manufactured by the illustrated method. These views show L-shaped confinement ring 400 as an annular structure or component.

[0062] Essentially, L-shaped confinement ring 400 is a structure that can be used to confine plasma in plasma region 130 between substrate support assembly and upper electrode in plasma chamber 100. In other words, L-shaped confinement ring 400, substrate support assembly and upper electrode define plasma region 130 in plasma chamber 100.

[0063] The structure (i.e., L-shaped confinement ring 400) includes an annular element (i.e., element 400-2) containing a plurality of holes (i.e., element 402) and a cylindrical element (i.e., element 400-1) extending vertically upward from the annular element. The annular element 400-2 surrounds the substrate support assembly (e.g., Figure 1 102 shown in FIG. 10). The ring element 400-2 is arranged along the same plane as the plane where the substrate arranged on the substrate support assembly is located. The cylindrical element 400-1 extends from the outer edge of the ring element 400-2 in a direction perpendicular to the plane where the substrate arranged on the substrate support assembly is located. The structure (i.e., L-shaped confinement ring 400) is integrally formed of a polycrystalline body (e.g., silicon). That is, the structure is a single piece.

[0064] The distal end (upper end) of the cylindrical element 400-1 includes a plurality of threaded holes 408 to receive screws, through which the outer portion of the upper electrode (e.g., the outer electrode 406 extending radially outward from the plane along the inner electrode 404, or the outer portion of the element 108a or the element 108a+106) is screwed onto the cylindrical element 400-1. The outer diameters of the cylindrical element 400-1 and the outer electrode 406 are equal. The cylindrical element 400-1 is, for example, a cylindrical wall having a thickness of 3-30 mm and a height of 10-100 mm.

[0065] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not clearly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0066] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0067] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0068] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0069] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0070] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0071] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. An L-shaped plasma confinement ring for a plasma chamber, comprising: an annular element for the L-shaped plasma confinement ring of the plasma chamber, the annular element surrounding a substrate support assembly in the plasma chamber and arranged along a plane where a substrate placed on the substrate support assembly in the plasma chamber lies, the annular element forming a horizontal portion of the L-shaped plasma confinement ring and comprising a plurality of holes; as well as a cylindrical element for the L-shaped plasma confinement ring in the plasma chamber, the cylindrical element forming a vertical portion of the L-shaped plasma confinement ring and extending from an outer edge of the annular element in a direction perpendicular to the plane in which the substrate is placed on the substrate support assembly in the plasma chamber, wherein the cylindrical element extends uniformly to the upper end; wherein the upper end does not extend in any direction parallel to the plane; and wherein the cylindrical element does not extend below the annular element; wherein the upper end of the cylindrical element is connectable to an upper electrode in the plasma chamber, the upper electrode extending radially outwardly toward the cylindrical element along the plane; and The L-shaped plasma confinement ring is a single piece.

2. The L-shaped plasma confinement ring of claim 1 , further comprising a plurality of vertical holes located at the upper end of the cylindrical element, wherein the vertical holes are threaded to receive screws for attaching the cylindrical element to the upper electrode of the plasma chamber.

3. The L-shaped plasma confinement ring of claim 1 , wherein said annular element, said cylindrical element, said substrate support assembly, and said upper electrode define a volume within said plasma chamber in which plasma is confined during processing of said substrate within said plasma chamber.

4. The L-shaped plasma confinement ring of claim 3, wherein the outer diameters of the cylindrical element and the upper electrode are equal.

5. The L-shaped plasma confinement ring of claim 1, wherein the cylindrical element is a cylindrical wall having a thickness of 3-30 mm and a height of 10-100 mm.

6. The L-shaped plasma confinement ring of claim 1, wherein the holes are radially extending slots.

7. The L-shaped plasma confinement ring of claim 1, wherein the holes are formed using an abrasive water jet cutting process.

8. A substrate processing system, comprising: The L-shaped plasma confinement ring according to claim 1; a lower electrode disposed in the substrate support assembly, the lower electrode being configured to be parallel to the plane where the substrate placed on the substrate support assembly lies, wherein the annular element surrounds the lower electrode; and An upper electrode, which is arranged at a height apart from and parallel to the lower electrode, extends radially outwardly toward the cylindrical element along the plane and can be connected to the upper end of the cylindrical element.

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