Semiconductor devices

Abstract

In semiconductor devices, it is preferable to suppress the occurrence of oscillations and noise in voltage and current. The present invention provides a semiconductor device comprising: a plurality of circuit sections; and a first connection section and a second connection section formed of a plate-shaped conductive material and connected to any one of the circuit sections. The main surfaces of the first connection section and the second connection section are arranged opposite to each other. The first connection section and the second connection section respectively have a circuit connection end connected to the circuit section and a path limiting section that limits the current path on the main surface. The direction of the current flowing in the current path between the path limiting section and the circuit connection end is different in the first connection section and the second connection section. Preferably, the direction of the current flowing in the current path between the path limiting section and the circuit connection end is opposite in the first connection section and the second connection section.

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] Previously, semiconductor devices having multiple semiconductor chips and in which current flows through each of the multiple semiconductor chips are known (for example, see Patent Documents 1 and 2).

[0003] Patent Document 1: WO2014 / 122877

[0004] Patent Document 2: WO2014 / 192118 Summary of the Invention

[0005] The technical problem that the invention aims to solve

[0006] In semiconductor devices, it is desirable to suppress the generation of oscillations and noise in voltage and current.

[0007] Technical solutions adopted to solve technical problems

[0008] In a first aspect of the present invention, a semiconductor device is provided. The semiconductor device may include multiple circuit sections. The semiconductor device may include a first connection section and a second connection section, which are formed of a plate-shaped conductive material and connected to any one of the circuit sections. The main surfaces of the first and second connection sections may be arranged opposite to each other. The first and second connection sections may each have a circuit connection end connected to the circuit section and a path limiting section that limits the current path on the main surface. The direction of the current flowing in the current path between the path limiting section and the circuit connection end may be different in the first and second connection sections.

[0009] The direction of the current flowing in the current path between the path limiting part and the circuit connection end can be opposite in the first connection part and the second connection part.

[0010] The first connection portion and the second connection portion can be configured such that at least a portion of the current surrounds the path limiting portion, and the direction of the current surrounding the path limiting portion can be opposite in the first connection portion and the second connection portion.

[0011] The main surfaces of the first and second connecting parts can be arranged in parallel.

[0012] The first connecting portion and the second connecting portion may have an overlapping area that overlaps in a direction orthogonal to the main surface. The path limiting portion of the first connecting portion and the second connecting portion may have one or more first slits extending along a first direction. In the overlapping area, the number of first slits provided in the first connecting portion and the number of first slits provided in the second connecting portion may be the same.

[0013] The path limiting portion of the first connecting portion and the second connecting portion may have one or more second slits extending in a second direction different from the first direction. In the overlapping region, the number of second slits provided in the first connecting portion and the number of second slits provided in the second connecting portion may be the same.

[0014] The upper ends of the first connecting portion and the upper ends of the second connecting portion can be configured at the same height. In the overlapping area, the first slit provided in the first connecting portion and the first slit provided in the second connecting portion can be configured at the same height.

[0015] The upper end of the first connecting portion can be positioned higher than the upper end of the second connecting portion. In the overlapping area, the first slit in the first connecting portion can be positioned higher than the first slit in the second connecting portion.

[0016] The width of the first slit in the first connecting part and the width of the first slit in the second connecting part can be different.

[0017] The thickness of the first connecting part can be greater than the thickness of the second connecting part. The width of the first slit in the first connecting part can be greater than the width of the first slit in the second connecting part.

[0018] The current flowing through the first connection can be greater than the current flowing through the second connection, and the width of the first slit in the first connection can be greater than the width of the first slit in the second connection.

[0019] The semiconductor device may include a third connection portion formed of a plate-shaped conductive material and connected to any circuit portion. The first connection portion may be disposed opposite to the first main surface of the second connection portion. The third connection portion may be disposed opposite to the first main surface of the second connection portion. The third connection portion may have a circuit connection end and a path limiting portion. The direction of the current flowing in the current path between the path limiting portion and the circuit connection end may be different in the third connection portion and the second connection portion.

[0020] The second connecting portion may have an end-edge slit, which is configured to extend from the circuit-side end edge where the circuit connection end is located toward the interior of the second connecting portion. The second connecting portion may have a first inner slit, which is connected to the end-edge slit and extends along the circuit-side end edge. The second connecting portion may have a second inner slit, which is connected to the end-edge slit and extends along the circuit-side end edge and to the opposite side of the first inner slit. The first connecting portion and the third connecting portion may be arranged in a direction parallel to the main surface of the second connecting portion. The first connecting portion may have a first parallel slit, which extends from the end edge opposite the third connecting portion in a direction parallel to the first inner slit. The third connecting portion may have a second parallel slit, which extends from the end edge opposite the first connecting portion in a direction parallel to the second inner slit.

[0021] The semiconductor device may include a fourth connection portion, which is formed of a plate-shaped conductive material and connected to any circuit portion. The first connection portion may be disposed opposite to the first main surface of the second connection portion. The fourth connection portion may be disposed opposite to the second main surface of the second connection portion. The fourth connection portion may have a circuit connection end and a path limiting portion. The direction of the current flowing in the current path between the path limiting portion and the circuit connection end may be different in the fourth connection portion and the second connection portion.

[0022] The path limiting portions of the first, second, and fourth connecting portions may each have one or more first slits extending along a first direction. Current flowing through the first connecting portion and current flowing through the fourth connecting portion may flow to the second connecting portion. The width of the first slit in the second connecting portion may be larger than the width of the first slit in both the first and fourth connecting portions.

[0023] Furthermore, the above summary of the invention does not list all the features of the invention. In addition, sub-combinations of these feature groups can also constitute an invention. Attached Figure Description

[0024] Figure 1 An example of a perspective view of a semiconductor device 100 according to one embodiment of the present invention is shown.

[0025] Figure 2 This is an example of a top view of a semiconductor device 100.

[0026] Figure 3 This is a diagram showing an example of the circuit structure of the internal circuitry of the semiconductor device 100.

[0027] Figure 4A It is a diagram that illustrates the general outline of each circuit block CB.

[0028] Figure 4BThis is a diagram showing an example of a first circuit section 211 arranged along a first direction.

[0029] Figure 4C This is a diagram showing another example of the first circuit section 211 arranged along the first direction.

[0030] Figure 4D This is a diagram showing another example of the first circuit section 211 arranged along the first direction.

[0031] Figure 5 This is a diagram showing an example of the shape of the inter-block connection portion 202, the first block inner connection portion 204, and the second block inner connection portion 206.

[0032] Figure 6 It is a diagram illustrating the location of the slits in each connection part.

[0033] Figure 7 This is a diagram showing another example of the configuration of the slits in each connection part.

[0034] Figure 8 This is a diagram showing an example of the shape of the fourth inner connecting part 209.

[0035] Figure 9 This is a diagram showing an example of the shape of the third inner connecting part 208.

[0036] Figure 10 This is a schematic diagram showing the resistance of the inter-block connection 202 and the intra-block connection between the various circuit sections.

[0037] Figure 11 This is a diagram showing another example of the inter-block connection 202.

[0038] Figure 12 This is a diagram showing an example of a connection portion 371 and a connection portion 471 disposed opposite each other in a semiconductor device 100.

[0039] Figure 13 This is a diagram showing an example of the connecting part 571.

[0040] Figure 14 This is a diagram showing another configuration example of multiple connecting parts.

[0041] Figure 15 It is shown Figure 14 Examples of slit configurations for each connecting part are shown. Detailed Implementation

[0042] The present invention will now be described through embodiments thereof; however, these embodiments do not limit the invention as defined in the claims. Furthermore, not all combinations of the features described in the embodiments are necessarily required for the inventive solution.

[0043] In this specification, the side parallel to the depth direction of the semiconductor substrate on which the semiconductor chip is located is referred to as "upper" and the other side as "lower". One of the two main surfaces of a substrate, layer, or other component is referred to as the upper surface and the other as the lower surface. The directions of "upper", "lower", "front", and "back" are not limited to the direction of gravity or the direction of mounting the semiconductor device to the substrate, etc.

[0044] In this specification, rectangular coordinate axes of X, Y, and Z are sometimes used to illustrate technical matters. In this specification, the plane parallel to the upper surface of the semiconductor chip is designated as the XY plane, and the axis perpendicular to the XY plane is designated as the Z-axis.

[0045] Furthermore, in this specification, distances, resistance values, current magnitudes, etc., are sometimes described as equal. These equalities are not limited to being exactly the same and may vary without departing from the scope of the invention described herein. For example, "equal" means that an error within 10% is permissible.

[0046] Figure 1 This is an example of a perspective view of a semiconductor device 100 according to an embodiment of the present invention. The semiconductor device 100 includes a housing portion 110, a base portion 120, and a plurality of terminals. In one example, the semiconductor device 100 is used in a power conditioning subsystem (PCS).

[0047] The housing portion 110 houses the internal circuitry, including semiconductor chips and wiring. The housing portion 110 is molded from insulating resin. The housing portion 110 is mounted on the base portion 120. A cutout 112 may be provided in the housing portion 110 to increase creepage distance and improve insulation.

[0048] The base portion 120 is fixed to the housing portion 110 on its upper surface using an adhesive or similar agent. The base portion 120 can be set to a ground potential. The base portion can be fixed to a heat dissipation component such as a heat sink on its lower surface using screws or similar agents. The base portion 120 has a main surface in the XY plane. When viewed from above in the Z-axis direction, the base portion 120 and the housing portion 110 may have two sets of opposing sides. In this example, the base portion 120 and the housing portion 110 have long sides along the Y-axis and short sides along the X-axis.

[0049] The terminal mounting surface 114 is a surface on the upper surface of the housing portion 110 where multiple terminals are exposed. Each terminal electrically connects the internal circuitry housed in the housing portion 110 to an external device. First auxiliary terminals ts1 to eleventh auxiliary terminals ts11 are provided on the terminal mounting surface 114. The terminal mounting surface 114 has a protrusion 116 protruding in the Z-axis direction.

[0050] The protrusion 116 is located near the center of the terminal mounting surface 114 when viewed from above. In this example, the protrusion 116 is positioned at the center of the terminal mounting surface 114 in the X-axis direction and extends along the Y-axis direction. A first external connection terminal tm1 to a fifth external connection terminal tm5 are provided on the protrusion 116. The first external connection terminal tm1 to the fifth external connection terminal tm5 are arranged sequentially along the Y-axis direction at the protrusion 116, but the arrangement of the external connection terminals is not limited to this.

[0051] The first external connection terminal tm1(P) is a terminal connected to the positive terminal of a DC power supply located outside the semiconductor device 100. The fourth external connection terminal tm4(N) is a terminal connected to the negative terminal of an external DC power supply. The first external connection terminal tm1(P) and the fourth external connection terminal tm4(N) function as power supply terminals P and N in the internal circuit of the semiconductor device 100.

[0052] The fifth external connection terminal tm5(U) functions as an AC output terminal U in the internal circuit of the semiconductor device 100. The second external connection terminal tm2(M1) and the third external connection terminal tm3(M2) are connected to predetermined connection points in the internal circuit of the semiconductor device 100. For example, the second external connection terminal tm2(M1) and the third external connection terminal tm3(M2) function as intermediate terminals M1 and M2 that clamp the voltage of predetermined connection points in the internal circuit of the semiconductor device 100.

[0053] The first auxiliary terminal ts1 to the fifth auxiliary terminal ts5 are arranged along one end edge (the long side in this example) of the terminal arrangement surface 114 along the Y-axis. The sixth auxiliary terminal ts6 to the eleventh auxiliary terminal ts11 are arranged along the other end edge of the terminal arrangement surface 114 along the Y-axis.

[0054] The first auxiliary terminal ts1 (T4P) outputs the collector voltage of transistor T4, which will be described later. The second auxiliary terminal ts2 (T4G) is the gate terminal that provides the gate voltage of transistor T4. The third auxiliary terminal ts3 (T4E) outputs the emitter voltage of transistor T4.

[0055] The fourth auxiliary terminal ts4 (T3G) is the gate terminal that provides the gate voltage for transistor T3, which will be described later. The fifth auxiliary terminal ts5 (T3E) outputs the emitter voltage of transistor T3.

[0056] The sixth auxiliary terminal ts6 (T1E) outputs the emitter voltage of transistor T1, which will be described later. The seventh auxiliary terminal ts7 (T1G) is the gate terminal that provides the gate voltage of transistor T1.

[0057] The eighth auxiliary terminal ts8 (T2E) outputs the emitter voltage of transistor T2, which will be described later. The ninth auxiliary terminal ts9 (T2G) is the gate terminal that provides the gate voltage of transistor T2.

[0058] The tenth auxiliary terminal ts10 (TH2) and the eleventh auxiliary terminal ts11 (TH1) are terminals for the thermistors connected to the thermistors that detect the internal temperature of the housing 110. For example, the thermistors are embedded in the housing 110 below the tenth auxiliary terminal ts10 (TH2) and the eleventh auxiliary terminal ts11 (TH1).

[0059] Figure 2 This is an example of a top view of a semiconductor device 100. The figure shows an example of the configuration of internal circuitry disposed on the base portion 120 inside the housing portion 110. The internal circuitry in this example is a three-level power conversion device (inverter) circuit, but the internal circuitry is not limited to this.

[0060] The semiconductor device 100 in this example has six insulating substrates 50a to 50f on a base portion 120. The six insulating substrates 50a, 50b, 50c, 50d, 50e, and 50f are arranged in this order along the Y-axis. The insulating substrates 50 are bonded to the base portion 120. The insulating substrates 50 have conductive patterns on both sides of a thermally conductive ceramic (e.g., alumina) substrate. For example, the insulating substrates 50 are DCB (Direct Copper Bonding) substrates on which copper circuit boards are directly bonded.

[0061] Each insulating substrate 50 can be configured with one or more transistors T. Each transistor T can be an insulated-gate bipolar transistor (IGBT) or a field-effect transistor (FET). Figure 2 The image shows a semiconductor chip equipped with transistor T. In this example, the semiconductor device 100 has multiple transistors connected in parallel with each other. Figure 2 In the example, three transistors T1 are connected in parallel. Similarly, three transistors T2 are connected in parallel, three transistors T3 are connected in parallel, and three transistors T4 are connected in parallel. In this specification, multiple transistors Tk (where k is an integer) connected in parallel are sometimes collectively referred to as transistor Tk.

[0062] Multiple transistors Tk connected in parallel can be along a predetermined first direction (in Figure 2 The transistors are arranged in a Y-axis direction. In this example, multiple transistors T1 and multiple transistors T2 are arranged along the long side of one side of the base portion 120, and multiple transistors T3 and multiple transistors T4 are arranged along the long side of the other side of the base portion 120.

[0063] Furthermore, transistors T1 and T4 can be mounted on the same insulating substrate 50. Transistors T2 and T3 can be mounted on the same insulating substrate 50. Insulating substrates 50a to 50c are all insulating substrates on which transistors T4 and T1 are mounted. Insulating substrates 50d to 50f are all insulating substrates on which transistors T3 and T2 are mounted.

[0064] Furthermore, diodes Dk can be provided on each insulating substrate 50. Diode Dk can be a freewheeling diode connected in reverse parallel with transistor Tk. In this example, diode Dk is provided for each transistor Tk, but in other examples, diode Dk can be provided for a subset of transistors Tk. Furthermore, in this example, the transistors and diodes are located on different semiconductor chips, but they could also be reverse-conducting IGBTs (RC-IGBTs), etc., located on the same semiconductor chip.

[0065] In this example, viewed from above, the area where the insulating substrate 50 is located is divided into four circuit blocks CB1 to CB4. The first circuit block CB1 is the area where multiple transistors T1 are arranged side-by-side; the second circuit block CB2 is the area where multiple transistors T2 are arranged side-by-side; the third circuit block CB3 is the area where multiple transistors T3 are arranged side-by-side; and the fourth circuit block CB4 is the area where multiple transistors T4 are arranged side-by-side. Diodes Dk can be installed in each of the circuit blocks CBk.

[0066] In this example, circuit blocks CB1 to CB4 are divided by virtual central lines L1 and L2. Central line L2 divides the base portion 120 into areas where insulating substrates 50a, 50b, and 50c are provided, and areas where insulating substrates 50d, 50e, and 50f are provided. In this example, central line L2 is a straight line parallel to the X-axis passing between insulating substrates 50c and 50d.

[0067] The central line L1 divides the insulating substrates 50a, 50b, and 50c into regions where multiple transistors T1 are disposed and regions where multiple transistors T4 are disposed. Furthermore, the central line L1 divides the insulating substrates 50d, 50e, and 50f into regions where multiple transistors T2 are disposed and regions where multiple transistors T3 are disposed. In this example, the central line L1 is a straight line parallel to the Y-axis passing through the center of the region where the insulating substrate 50 is disposed in the X-axis direction.

[0068] The semiconductor device 100 has a plurality of conductive patterns 36 disposed on an insulating substrate 50. The conductive patterns 36 are formed of a conductive material such as copper. Furthermore, the semiconductor device 100 has a plurality of connection members 90 that electrically connect various components in its internal circuitry. The connection members 90 are wirings, such as wires or lead frames, disposed above the insulating substrate 50. Figure 2In the diagram, the connecting component 90 is shown with a solid line. Furthermore, black dots indicate the connection points between the connecting component 90 and other components. The connecting component 90 is connected to other components at these connection points via direct bonding or soldering.

[0069] Conductive pattern 36a is disposed at one end of each insulating substrate 50a-50c in the X-axis direction. Conductive pattern 36a electrically connects the emitter pad of the corresponding transistor T4 and the anode pad of the diode D4 to the third auxiliary terminal ts3 (T4E).

[0070] Conductive patterns 36b are disposed at one end of each of the insulating substrates 50a to 50c in the X-axis direction. Conductive patterns 36b electrically connect the gate pad of the corresponding transistor T4 to the second auxiliary terminal ts2 (T4G). In this example, conductive patterns 36a and 36b are wirings disposed on the fourth circuit block CB4 and having a long side in the Y-axis direction.

[0071] Conductive patterns 36c are disposed on each of the insulating substrates 50a to 50c. In this example, a transistor T4 and a diode D4 are disposed on the conductive patterns 36c. The conductive patterns 36c are connected to the collector electrode of the transistor T4 and the cathode electrode of the diode D4 through solder or the like. In addition, each conductive pattern 36c is electrically connected to the first auxiliary terminal ts1 (T4P).

[0072] Conductive patterns 36d are disposed on each of the insulating substrates 50a to 50c. In this example, conductive pattern 36d electrically connects the emitter pad of transistor T4 and the anode pad of diode D4 to conductive pattern 36a. Conductive patterns 36c and 36d are disposed on the fourth circuit block CB4.

[0073] The conductive pattern 36h is disposed at the other end of each insulating substrate in the insulating substrates 50a to 50c in the X-axis direction. The conductive pattern 36h electrically connects the emitter pad of the corresponding transistor T1 and the anode pad of the diode D1 to the sixth auxiliary terminal ts6 (T1E).

[0074] Conductive patterns 36g are disposed at the other end of each insulating substrate in the insulating substrates 50a to 50c in the X-axis direction. Conductive patterns 36g electrically connect the gate pad of the corresponding transistor T1 to the seventh auxiliary terminal ts2 (T1G). In this example, conductive patterns 36h and 36g are wirings disposed in the first circuit block CB1 and having a long side in the Y-axis direction.

[0075] Conductive patterns 36f are disposed on each of the insulating substrates 50a to 50c. In this example, a transistor T1 and a diode D1 are disposed on the conductive pattern 36f. The conductive pattern 36f is connected to the collector electrode of transistor T1 and the cathode electrode of diode D1 via solder or the like. In this example, conductive patterns 36f and 36d are disposed continuously. Thus, the collector pad of transistor T1 and the emitter pad of transistor T4 are electrically connected to each other.

[0076] Conductive pattern 36e is disposed on each of the insulating substrates 50a to 50c. In this example, conductive pattern 36e electrically connects the emitter pad of transistor T1 and the anode pad of diode D1 to conductive pattern 36h. Conductive patterns 36f and 36e are disposed on the first circuit block CB1.

[0077] The conductive pattern 36i is disposed at one end of each insulating substrate in the insulating substrates 50d to 50f in the X-axis direction. The conductive pattern 36i electrically connects the emitter pad of the corresponding transistor T3 and the anode pad of the diode D3 to the fifth auxiliary terminal ts5 (T3E).

[0078] Conductive patterns 36j are disposed at one end of each insulating substrate in the insulating substrates 50d to 50f in the X-axis direction. Conductive patterns 36j electrically connect the gate pad of the corresponding transistor T3 to the fourth auxiliary terminal ts4 (T3G). In this example, conductive patterns 36i and 36j are wirings disposed in the third circuit block CB3 and having a long side in the Y-axis direction.

[0079] Conductive patterns 36k are disposed on each of the insulating substrates 50d to 50f. In this example, a transistor T3 and a diode D3 are disposed on the conductive pattern 36k. The conductive pattern 36k is connected to the collector electrode of the transistor T3 and the cathode electrode of the diode D3 through solder or the like.

[0080] Conductive patterns 36l are disposed on each of the insulating substrates 50d to 50f. In this example, conductive pattern 36l electrically connects the emitter pad of transistor T3 and the anode pad of diode D3 to conductive pattern 36i. Conductive patterns 36k and 36l are disposed on the third circuit block CB3.

[0081] The conductive pattern 36o is disposed at the other end of each insulating substrate in the insulating substrates 50d to 50f in the X-axis direction. The conductive pattern 36o electrically connects the emitter pad of the corresponding transistor T2 and the anode pad of the diode D2 to the eighth auxiliary terminal ts8 (T2E).

[0082] Conductive patterns 36n are disposed at the other end of each insulating substrate in the insulating substrates 50d to 50f in the X-axis direction. Conductive patterns 36n electrically connect the gate pad of the corresponding transistor T2 to the ninth auxiliary terminal ts9 (T2G). In this example, conductive patterns 36o and 36n are wirings disposed in the second circuit block CB2 and have a long side in the Y-axis direction.

[0083] Conductive patterns 36m are provided on each of the insulating substrates 50d to 50f. In this example, a transistor T2 and a diode D2 are provided on the conductive pattern 36m. The conductive pattern 36m is connected to the collector electrode of the transistor T2 and the cathode electrode of the diode D2 through solder or the like.

[0084] Conductive pattern 36p is disposed on each of the insulating substrates 50d to 50f. In this example, conductive pattern 36p electrically connects the emitter pad of transistor T2 and the anode pad of diode D2 to conductive pattern 36o. Conductive patterns 36m and 36p are disposed on the second circuit block CB2. In this example, conductive pattern 36p and conductive pattern 36k are disposed consecutively. Thus, the collector pad of transistor T3 and the emitter pad of transistor T4 are electrically connected to each other.

[0085] The semiconductor device 100 in this example includes an inter-block connection portion 202, a first intra-block connection portion 204, a second intra-block connection portion 206, a third intra-block connection portion 208, and a fourth intra-block connection portion 209. The inter-block connection portion 202 electrically connects two circuit blocks CB. In this example, the inter-block connection portion 202 electrically connects the first circuit block CB1 and the second circuit block CB2.

[0086] The inter-block connection 202 is electrically connected to a circuit element in each circuit block CB. In this example, the inter-block connection 202 is connected to multiple conductive patterns 36e of the first circuit block CB1 and multiple conductive patterns 36m of the second circuit block CB2.

[0087] Each block's internal connection portion is electrically connected to multiple circuit elements within a circuit block CB. In this example, the first block's internal connection portion 204 is connected to multiple conductive patterns 36l of the third circuit block CB3. In this example, the second block's internal connection portion 206 is connected to multiple conductive patterns 36c of the fourth circuit block CB4. In this example, the third block's internal connection portion 208 is connected to multiple conductive patterns 36f of the first circuit block CB1. In this example, the fourth block's internal connection portion 209 is connected to multiple conductive patterns 36p of the second circuit block CB2.

[0088] The inter-block connection portion 202 and the intra-block connection portion can be plate-shaped conductive components disposed above the insulating substrate 50. At least a portion of the plate-shaped portion of the inter-block connection portion 202 and the intra-block connection portion can be configured perpendicular to the insulating substrate 50. The inter-block connection portion 202 and the intra-block connection portion can be formed of conductive materials such as copper or aluminum. Figure 2 In the diagram, the area in each conductive pattern 36 that is connected to the inter-block connection portion 202 or the intra-block connection portion is shown as the connection area 210.

[0089] Figure 3 This diagram illustrates an example of the circuit configuration of the internal circuitry of the semiconductor device 100. The internal circuitry in this example is the circuitry of one phase (U phase) of the three phases (U phase, V phase, W phase) of a three-level power conversion (inverter) circuit.

[0090] Transistors T4, T1, T2, and T3 are connected in series between the first external connection terminal tm1(P) and the fourth external connection terminal tm4(N). For example... Figure 2 As explained, each transistor Tk contains multiple transistors connected in parallel, but... Figure 3 In the circuit, it is represented by a single transistor. For example, multiple transistors T4 are connected in parallel with each other, multiple transistors T1 are connected in parallel with each other, and multiple transistors T4 and multiple transistors T1 are connected in series. Diodes Dk are connected in reverse parallel to each transistor Tk.

[0091] The connection point between the emitter terminal of transistor T1 and the collector terminal of transistor T2 is designated as connection point C1. Connection point C1 is connected to the fifth external connection terminal tm5(U), which serves as the AC output terminal.

[0092] The collector terminal of transistor T1 and the emitter terminal of transistor T2 are connected in series by two diodes D5 and D6. Diodes D5 and D6 are configured such that the direction from the emitter terminal of transistor T2 toward the collector terminal of transistor T1 is positive. It should be noted that in... Figure 2 Diodes D5 and D6 are omitted. Diodes D5 and D6 can be disposed on the conductive pattern 36, in the third inner connection part 208 or the fourth inner connection part 209, or in other positions.

[0093] The connection point between diodes D5 and D6 is designated as connection point C2. Connection point C2 is connected to the second external connection terminal tm2 (M1) and the third external connection terminal tm3 (M2). With this configuration, the internal circuit operates as a type I three-level power conversion circuit consisting of four transistors T connected in series.

[0094] Figure 4AThis is a diagram illustrating the general outline of each circuit block CB. The first circuit block CB1 has a plurality of first circuit sections 211 connected in parallel. In this example, each first circuit section 211 includes conductive patterns 36-e and conductive patterns 36-f, as well as transistors T1 and diodes D1 disposed on these conductive patterns.

[0095] The second circuit block CB2 has a plurality of second circuit sections 212 connected in parallel. Each second circuit section 212 in this example includes a conductive pattern 36-m and a conductive pattern 36-p, as well as a transistor T2 and a diode D2 disposed on these conductive patterns.

[0096] The third circuit block CB3 has a plurality of third circuit sections 213 connected in parallel. Each third circuit section 213 in this example includes conductive patterns 36-k and 36-l, as well as transistors T3 and diodes D3 disposed on these conductive patterns.

[0097] The fourth circuit block CB4 has a plurality of fourth circuit sections 214 connected in parallel. Each fourth circuit section 214 in this example includes conductive patterns 36-c and 36-d, as well as transistors T4 and diodes D4 disposed on these conductive patterns.

[0098] In this example, the first circuit block CB1 and the second circuit block CB2 are arranged along the first direction (Y-axis direction). Similarly, the third circuit block CB3 and the fourth circuit block CB4 are arranged along the first direction (Y-axis direction). Furthermore, the first circuit block CB1 and the fourth circuit block CB4 are arranged along the second direction (X-axis direction). Similarly, the second circuit block CB2 and the third circuit block CB3 are arranged along the second direction (X-axis direction). It should be noted that... Figure 2 As shown, in this example, the first direction (Y-axis direction) is parallel to the long side of the base portion 120. Furthermore, in this example, the second direction (X-axis direction) is parallel to the short side of the base portion 120.

[0099] Furthermore, multiple circuit sections within each circuit block CB are arranged along a first direction (Y-axis direction). For example, first circuit sections 211-1, 211-2, and 211-3 are arranged along the first direction. It should be noted that arranging the circuit sections along the first direction means that the positions of each circuit section in the first direction are different. In a direction perpendicular to the first direction (the X-axis direction in this example), the circuit sections can be arranged in the same position or staggered. Each circuit section may have a portion overlapping a straight line parallel to the first direction.

[0100] As described above, the inter-block connection portion 202 connects the first circuit block CB1 to the second circuit block CB2. That is, the inter-block connection portion 202 is connected to each of the plurality of first circuit portions 211 and the plurality of second circuit portions 212.

[0101] Figure 4B This diagram shows an example of first circuit sections 211 arranged along a first direction. The positions of each first circuit section 211 in the first direction (Y-axis) are different. It should be noted that the position of each first circuit section 211 can be determined by the centroid of the shape of the conductive pattern on the XY plane where the connection area 210 is provided. In this example, the positions of each first circuit section 211 on the X-axis are the same.

[0102] Figure 4C This diagram illustrates another example of first circuit sections 211 arranged along a first direction. In this example, the positions of each first circuit section 211 in the first direction (Y-axis) are also different. In this example, each first circuit section 211 is configured to have different positions in the X-axis direction. This method is also included in the case of arrangement along the first direction in this specification. It should be noted that in this example, each first circuit section 211 is configured to have a straight line 201 parallel to the first direction passing through the conductive pattern 36 of each first circuit section 211. In other examples, it may be configured such that the conductive pattern 36 of at least one first circuit section 211 does not overlap with the straight line 201.

[0103] Figure 4D This diagram illustrates another example of first circuit sections 211 arranged along a first direction. In this example, the positions of each first circuit section 211 in the first direction (Y-axis) are also different. In this example, at least one first circuit section 211 has a portion that overlaps with other first circuit sections 211 in the X-axis direction. This arrangement is also included in this specification for cases arranged along the first direction.

[0104] exist Figures 4B to 4D The first circuit section 211 has been described in detail, but the same applies to other circuit sections. Furthermore, the same applies to circuit block CB. Figures 4B to 4D The text describes the case of arrangement along the first direction, but the same applies to arrangements along other directions.

[0105] Figure 5 This is a diagram showing an example of the shape of the inter-block connection portion 202, the first block inner connection portion 204, and the second block inner connection portion 206. Figure 5 The shapes of the inter-block connection 202, the first intra-block connection 204, and the second intra-block connection 206 on the YZ plane are shown. (Further explanation is needed.) Figure 5In the diagram, the inter-block connection portion 202, the first intra-block connection portion 204, and the second intra-block connection portion 206 are schematically shown on the same YZ plane. For example... Figure 2 As shown, the inter-block connection portion 202, the first intra-block connection portion 204, and the second intra-block connection portion 206 are positioned differently on the X-axis. In this example, the first intra-block connection portion 204 is an example of a first connection portion, the inter-block connection portion 202 is an example of a second connection portion, and the second intra-block connection portion 206 is an example of a third connection portion.

[0106] Each connection portion is formed of a plate-shaped conductive material and is connected to any one of the circuit portions. In this example, the inter-block connection portion 202 is connected to a plurality of first circuit portions 211 and a plurality of second circuit portions 212, the first block internal connection portion 204 is connected to a plurality of third circuit portions 213, and the second block internal connection portion 206 is connected to a plurality of fourth circuit portions 214.

[0107] In this specification, "plate-like" refers to a shape where the area of ​​each of the two main faces arranged opposite each other is larger than the area of ​​any other face. The area of ​​each main face can be at least five times the largest area of ​​any of the other faces. Figure 5 In the middle, the main surface 305 of the plate-shaped portion 220 is parallel to the YZ plane.

[0108] In the inter-block connection portion 202 and the first inner-block connection portion 204, the main surfaces are arranged opposite each other. "The main surfaces are opposite each other" means that the normal to any part of one main surface passes through the other main surface. In this example, the main surface 305 of the inter-block connection portion 202 and the main surface 307 of the first inner-block connection portion 204 are arranged parallel to each other. It should be noted that in... Figure 5 In the example shown, the main surface opposite to the main surface 307 of the first inner connecting portion 204 is arranged opposite to the main surface 305 of the inter-block connecting portion 202.

[0109] In this specification, "two surfaces parallel" refers not only to a strictly parallel arrangement but also to a arrangement with a predetermined small angle. This small angle can be within 5 degrees. In this example, the main surface 305 of the inter-block connection 202 and the main surface 307 of the first intra-block connection 204 are both parallel to the YZ plane.

[0110] In the inter-block connection portion 202 and the inner-block connection portion 206, each main surface is arranged opposite to the other. In this example, the main surface 305 of the inter-block connection portion 202 and the main surface 303 of the inner-block connection portion 206 are arranged in parallel.

[0111] In this example, both the first inner connecting portion 204 and the second inner connecting portion 206 are arranged opposite to the same main surface 305 of the inter-block connecting portion 202. That is, the first inner connecting portion 204 and the second inner connecting portion 206 are arranged on the same side of the inter-block connecting portion 202. In this example, the first inner connecting portion 204 and the second inner connecting portion 206 are arranged along the Y-axis direction.

[0112] Furthermore, the inter-block connecting portion 202 and the first inner-block connecting portion 204 have an overlapping region 351 that overlaps when viewed from a direction perpendicular to the main surface 305 or the main surface 307 (the X-axis direction in this example). In this example, the inter-block connecting portion 202 has an overlapping region 351 that overlaps with the first inner-block connecting portion 204 and an overlapping region 352 that overlaps with the second inner-block connecting portion 206. In this example, the overlapping regions 351 and 352 are arranged along the Y-axis direction.

[0113] Each connection portion has a path limiting section that restricts the current path on the main surface. The path limiting section restricts the current path on the main surface of the connection portion by increasing the resistance value of the current path flowing through at least one circuit portion. Figure 5 In the example, the path limiting part is a slit provided in the plate-like portion of each connection. The slit is a groove penetrating the plate-like portion in the X-axis direction, causing the current flowing in at least one circuit section to detour and increase the current path length. Therefore, compared to the case where no slit is cut, the resistance value of the current path can be increased. However, the path limiting part is only required to increase the resistance value of the current path and is not limited to a slit. As an example, in the plate-like portion and a part of each connection end, a material with a higher resistivity than other parts can be used to provide the path limiting part; the thickness in the X-axis direction can be less than other parts; or multiple through holes can be used as a sieve area to provide the path limiting part. For example, in the case where... Figure 5 The position of the slit shown can replace the slit setting with a component made of high-resistivity material, or it can replace the slit setting with a thinner area, or it can use multiple through holes to set the screen area.

[0114] Each connecting part has a plate-like portion. In this example, the inter-block connecting part 202 has a plate-like portion 220, the first inner connecting part 204 has a plate-like portion 250, and the second inner connecting part 206 has a plate-like portion 260.

[0115] Each connecting portion has a circuit connection end that connects to the circuit portion. The circuit connection end can be provided in such a way that it protrudes from the end edge of the plate-shaped portion closest to the circuit portion toward the circuit portion side. In this example, the inter-block connecting portion 202 has a plurality of first connection ends 231 that connect to the first circuit portion 211 and a plurality of second connection ends 232 that connect to the second circuit portion 212 at its end edge 224. In this example, the first inner-block connecting portion 204 has a plurality of third connection ends 254 that connect to the third circuit portion 213 at its end edge 252. In this example, the second inner-block connecting portion 206 has a plurality of fourth connection ends 264 that connect to the fourth circuit portion 214 at its end edge 262.

[0116] The end of the first connecting end 231 on the first circuit section 211 side is positioned at position 354 on the Z-axis. The end of the second connecting end 232 on the second circuit section 212 side is positioned at position 354 on the Z-axis. The end of the third connecting end 254 on the third circuit section 213 side is positioned at position 354 on the Z-axis. The end of the fourth connecting end 264 on the fourth circuit section 214 side is positioned at position 354 on the Z-axis. However, the positions of each connecting end in the Z-axis direction may be different.

[0117] Each connecting portion has a slit in the Z-axis direction away from the end edge where the circuit connection end is located. This slit can extend along the Y-axis direction (i.e., it can have a long side in the Y-axis direction). In this example, the inter-block connecting portion 202 has a first inner slit 244-1 and a second inner slit 244-2 extending along the Y-axis direction at a position away from the end edge 224. In this example, the first intra-block connecting portion 204 has a first parallel slit 256 extending along the Y-axis direction at a position away from the end edge 252. The first parallel slit 256 can be configured to be parallel to the first inner slit 244-1.

[0118] In this example, the second inner connecting portion 206 has a second parallel slit 310 extending along the Y-axis at a position away from the end edge 262. The second parallel slit 310 can be configured to be parallel to the second inner slit 244-2. The first inner slit 244-1 and the first parallel slit 256 are configured in the overlapping region 351. The second inner slit 244-2 and the second parallel slit 310 are configured in the overlapping region 352.

[0119] Each connecting portion has a current path between the slit extending along the Y-axis and the circuit connection end. This current path can be arranged to extend along the Y-axis (i.e., it can have a long side in the Y-axis direction). In this example, the inter-block connecting portion 202 has a current path 300-1 between the end edge 224 and the first inner slit 244-1, and a current path 300-2 between the end edge 224 and the second inner slit 244-2. In this example, current paths 300-1 and 300-2 are arranged separately in the Y-axis direction. In this example, the first inner-block connecting portion 204 has a current path 301 between the end edge 252 and the first parallel slit 256. In this example, the second inner-block connecting portion 206 has a current path 302 between the end edge 262 and the second parallel slit 310. Current paths 300-1 and 301 are arranged in the overlapping region 351. Current paths 300-2 and 302 are arranged in the overlapping region 352.

[0120] For current paths 300-1 and 301, at least a portion of them may overlap when viewed from the X-axis. For current paths 300-1 and 301, the area of ​​the overlapping region when viewed from the X-axis may be more than half the area of ​​the current paths. For current paths 300-2 and 302, at least a portion of them may overlap when viewed from the X-axis. For current paths 300-2 and 302, the area of ​​the overlapping region when viewed from the X-axis may be more than half the area of ​​the current paths.

[0121] In this example, the second inner connecting part 206 has the function of... Figure 3 The external connection end 261, which functions as the first external connection terminal tm1(P) described in the figure, is also present. Furthermore, the first inner connection portion 204 has a function as... Figure 3 The external connection end 251 functions as the fourth external connection terminal tm4(N) described in the figure. Figure 3 As explained in the previous examples, in the semiconductor device 100 of this example, current flows sequentially from the external connection end 261 of the second internal connection portion 206 to the fourth connection end 264, the first connection end 231 of the inter-block connection portion 202, the second connection end 232 of the inter-block connection portion 202, the third connection end 254 of the first internal connection portion 204, and the external connection end 251 of the first internal connection portion 204. In each figure, the direction of current in the main surface of each connection portion is indicated by dashed arrows.

[0122] In this example, the direction of the current flowing in the current path 300-1 of the inter-block connection 202 is different from the direction of the current flowing in the current path 301 of the first intra-block connection 204. For example, in current path 300-1, the current flowing in the second connection end 232-3 flows in the negative direction of the Y-axis. Conversely, in current path 301, the current flowing in the third connection end 254-3 flows in the positive direction of the Y-axis. Similarly, in current path 300-2, the current flowing in the first connection end 231-1 flows in the negative direction of the Y-axis. Conversely, in current path 302, the current flowing in the fourth connection end 264-1 flows in the positive direction of the Y-axis.

[0123] Therefore, by making the directions of the currents in the current paths arranged opposite each other in the X-axis direction different, the electromagnetic inductance between the two connecting parts arranged opposite each other in the X-axis direction can be suppressed. Preferably, the directions of the currents in the current paths arranged opposite each other in the X-axis direction are opposite. Opposite directions mean not only that the current directions are strictly 180 degrees apart, but also that there is a predetermined angular error. This angular error is, for example, 45 degrees or less. With this configuration, the generation of oscillations or noise in the voltage and current can be suppressed. It should be noted that the closer the distance between the connecting parts, the more significant the electromagnetic inductance between the connecting parts becomes. The distance in the X-axis direction between the inter-block connecting part 202 and the first inner-block connecting part 204 can be less than 1 cm or less, or less than 0.5 mm. The distance in the X-axis direction between the inter-block connecting part 202 and the second inner-block connecting part 206 can be less than 1 cm or less, or less than 0.5 mm.

[0124] The inter-block connection portion 202 and the first intra-block connection portion 204 are respectively configured such that at least a portion of the current surrounds the slit. "Current surrounding the slit" means that there are regions adjacent to the slit where the current direction is opposite. In this example, the current directions are opposite in the region between the first inner slit 244-1 and the end edge 224, and in the region between the first inner slit 244-1 and the end edge 226.

[0125] For example, in the inter-block connection 202, the current flowing through the second connection end 232-3 rotates counterclockwise around the first inner slit 244-1. Conversely, in the first inner-block connection 204, the current flowing from the third connection end 254-3 rotates clockwise around the first parallel slit 256. Thus, the direction of the current around the slits is opposite in the two opposing connections, thereby further suppressing the total electromagnetic inductance between the two connections.

[0126] Even in the inter-block connection 202 and the second inner-block connection 206, the direction of the current flowing around the slit can be opposite. For example, in the inter-block connection 202, the current flowing from the first connection end 231-1 flows counterclockwise around the second inner slit 244-2. In contrast, in the second inner-block connection 206, the current flowing at the fourth connection end 264-1 can flow clockwise around the second parallel slit 310.

[0127] (First Embodiment)

[0128] The inter-block connection portion 202 of this embodiment has a plate-like portion 220, a plurality of first connection ends 231, and a plurality of second connection ends 232. The plate-like portion 220 may be a plate-like member extending from above a first circuit portion 211-3 disposed at one end of a plurality of first circuit portions 211 and a plurality of second circuit portions 212 arranged along the Y-axis direction to above a second circuit portion 212-1 disposed at the other end. The plate-like portion 220 may be provided perpendicular to the XY plane. The plate-like portion 220 has an end edge 224 opposite to the circuit block CB and an end edge 226 opposite to the end edge 224.

[0129] A first connecting end 231 is provided for each first circuit section 211. The first connecting end 231 is provided such that it protrudes from the end edge 224 of the plate-like portion 220 toward the first circuit section 211 and is connected to the first circuit section 211 in the connecting region 210. A second connecting end 232 is provided for each second circuit section 212. The second connecting end 232 is provided such that it protrudes from the end edge 224 of the plate-like portion 220 toward the second circuit section 212 and is connected to the second circuit section 212 in the connecting region 210. Figure 5 The first connecting end 231 and the second connecting end 232 are schematically shown. Each connecting end may have a portion extending parallel to the XY plane, or it may have a curved portion.

[0130] In a semiconductor device 100, current sometimes flows between a first circuit block CB1 and a second circuit block CB2 via an inter-block connection 202. For example, in Figure 3 In the circuit shown, if transistors T1 and T2 are in a short-circuit state where both are turned on, current will flow between transistors T1 and T2.

[0131] The multiple second circuit sections 212 of the second circuit block CB2 are arranged along the Y-axis. Therefore, the lengths of the current paths between each second circuit section 212 and the first circuit block CB1 are different. Since the resistance is determined based on the length of the current path, there is a possibility that the magnitude of the current flowing through each second circuit section 212 may vary. If the current varies among the multiple circuit sections arranged in parallel, it will cause a decrease in the withstand voltage of the semiconductor device 100. For example, the peak value of the short-circuit current flowing through the semiconductor device 100 may increase.

[0132] In this example, the inter-block connection portion 202 has at least a path limiting portion that increases the resistance of the current path 230 from the first circuit block CB1 to the second circuit portion 212-3. The second circuit portion 212-3 is the second circuit portion 212 closest to the first circuit block CB1 in the second circuit block CB2. Since current is most easily concentrated in the second circuit portion 212-3 closest to the first circuit block CB1, by lengthening the current path 230 for the second circuit portion 212-3, the withstand voltage of the semiconductor device 100 can be efficiently improved.

[0133] Furthermore, the path limiting section can increase the resistance value of the current path from the second circuit block CB2 to the first circuit section 211-1. The first circuit section 211-1 is the first circuit section 211 located closest to the second circuit block CB2 in the first circuit block CB1. Since current is most easily concentrated in the first circuit section 211-1, by lengthening the current path to the first circuit section 211-1, the withstand voltage of the semiconductor device 100 can be efficiently improved.

[0134] The path restriction part in this example can be as follows: Figure 5 The diagram shows a T-shaped slit. The inter-block connection portion 202 has an end-edge slit 242, a first internal slit 244-1, and a second internal slit 244-2. The end-edge slit 242 is located at the end edge 224 of the plate-like portion 220, between the first connecting end 231-1 and the second connecting end 232-3, and is configured to extend from the end edge 224 into the interior of the plate-like portion 220. The first connecting end 231-1 is the first connecting end 231 closest to the second connecting end 232 among a plurality of first connecting ends 231. The second connecting end 232-3 is the second connecting end 232 closest to the first connecting end 231 among a plurality of second connecting ends 232. The end-edge slit 242 may be centrally located between the first connecting end 231-1 and the second connecting end 232-3. The end-edge slit 242 may extend parallel to the Z-axis direction from the end edge 224.

[0135] In the plate-shaped portion 220, a first internal slit 244-1 is provided connected to the end edge slit 242 and extends along the end edge 224 toward the first connecting end 231. The first internal slit 244-1 may be provided parallel to the end edge 224 or inclined relative to the end edge 224. The first internal slit 244-1 may be configured to extend at least to a position further outward than the first connecting end 231-1. Outward refers to the side away from the end edge slit 242 on the Y-axis. In this example, the first internal slit 244-1 may extend to the first connecting end 231-2, which is centrally located in the Y-axis direction among the plurality of first connecting ends 231, or it may extend to a position further outward than the first connecting end 231-2. With such a configuration, the length of the current path corresponding to each first connecting end 231 can be averaged. The first internal slit 244-1 may not extend to a position opposite to the outermost first connecting end 231-3 in the Z-axis direction among the plurality of first connecting ends 231.

[0136] In the plate-shaped portion 220, a second internal slit 244-2 is provided connected to the end edge slit 242 and extends along the end edge 224 toward the second connecting end 232. The second internal slit 244-2 may be provided parallel to the end edge 224 or inclined relative to the end edge 224. The first internal slit 244-1 and the second internal slit 244-2 are configured to be separate from the end edge 224 in the Z-axis direction. As an example, the first internal slit 244-1 and the second internal slit 244-2 may be provided connected to the upper end of the end edge slit 242 in the Z-axis direction and extend along the Y-axis direction respectively.

[0137] The second internal slit 244-2 can be configured to extend at least to a position further outward than the second connecting end 232-3. In this example, the second internal slit 244-2 can extend to the second connecting end 232-2 located centrally in the Y-axis direction among the plurality of second connecting ends 232, or it can extend to a position further outward than the second connecting end 232-2. With such a configuration, the lengths of the current paths corresponding to each of the second connecting ends 232 can be averaged. The second internal slit 244-2 may not extend to a position opposite to the second connecting end 232-1 located outermost among the plurality of second connecting ends 232 in the Z-axis direction.

[0138] This configuration allows for an increase in the length of the current paths to the inner first circuit section 211-1 and the second circuit section 212-3, etc. Therefore, it allows for an increase in the resistance of these current paths.

[0139] In this example, the inter-block connection portion 202 is provided with an external connection end 222. The external connection end 222 can protrude upward from the end edge 226. In this example, the external connection end 222 functions as the fifth external connection terminal tm5(U).

[0140] In this example, the plate-like portion 220 can have a narrow region 228 whose width in the Z-axis direction is smaller than that of other regions. For example, the narrow region 228 is configured in... Figure 1 In the area where the protrusion 116 is not provided, the plate-shaped portion 220, excluding the narrow region 228, is disposed below the protrusion 116. That is, in the plate-shaped portion 220, the narrow region 228 is sometimes provided, depending on the shape of the housing portion 110, etc. The width of the plate-shaped portion 220 between the internal slit 244 and the end edge 224 can be the same as or smaller than the width of the narrow region 228. By setting the width of each portion in this way, it is possible to suppress the deviation of the resistance value between the current path of the second circuit portion 212-1, which includes the narrow region 228 in the current path, and the current path of other second circuit portions 212.

[0141] Furthermore, in the semiconductor device 100, there are cases where current flows in a U-shape or C-shape between multiple circuit blocks CB. For example, if there is a short circuit between the first external connection terminal tm1 (P) and the fourth external connection terminal tm4 (N), the current flows in a U-shape in the order of the fourth circuit block CB4, the first circuit block CB1, the second circuit block CB2, and the third circuit block CB3. Similarly, if there is a short circuit between the second external connection terminal tm2 (M1) and the fourth external connection terminal tm4 (N), the current flows in a C-shape in the order of the first circuit block CB1, the second circuit block CB2, and the third circuit block CB3. Furthermore, if there is a short circuit between the third external connection terminal tm3 (M2) and the first external connection terminal tm1 (P), the current flows in a C-shape in the order of the second circuit block CB2, the first circuit block CB1, and the fourth circuit block CB4.

[0142] If the current flows around the internal circuit like a U-shape or C-shape, the current path for the circuit section located on the side of the current's center tends to be shorter than the current path for the circuit section located far from the center. According to the inter-block connection 202 in this example, since the current path for the circuit section located near the center can be increased, the balance of the overall current path length can also be improved.

[0143] It should be explained that Figure 5The inter-block connection portion 202 has a first internal slit 244-1 and a second internal slit 244-2, but in other examples, it may have only either the first internal slit 244-1 or the second internal slit 244-2. In this case, the internal slit 244 is also connected to the end slit 242.

[0144] The first inner connecting portion 204 of this embodiment has a plate-shaped portion 250, a plurality of third connecting ends 254, and an outer connecting end 251. The plate-shaped portion 250 may be a plate-shaped member extending from above a third circuit portion 213-1 disposed at one end of a plurality of third circuit portions 213 arranged along the Y-axis direction to above a third circuit portion 213-3 disposed at the other end. The plate-shaped portion 250 may be provided perpendicular to the XY plane. The plate-shaped portion 250 has an end edge 252 opposite to the third circuit block CB3 and an end edge 253 opposite to the end edge 252.

[0145] A third connecting end 254 is provided for each third circuit section 213. The third connecting end 254 is provided such that it protrudes from the end edge 252 of the plate-shaped portion 250 toward the third circuit section 213 and connects to the third circuit section 213. Figure 5 The third connecting end 254 is schematically shown in the diagram. The third connecting end 254 may have a portion extending parallel to the XY plane, or it may have a curved portion. The outer connecting end 251 may protrude upward from the end edge 253.

[0146] In this example, the plate-shaped portion 250 is provided with a first parallel slit 256. The first parallel slit 256 is configured to traverse the shortest straight line connecting the third connection end 254-3, which is located closest to the fourth circuit block CB4 side of the third connection end 254, to the external connection end 251. Therefore, the first parallel slit 256 can lengthen the current path between the external connection end 251 and the third connection end 254-3, thereby increasing the resistance value of the current path to the third connection end 254-3. Thus, current to the third circuit section 213-3, which is located on the side surrounding the current center, can be suppressed. In this example, the first parallel slit 256 is also configured to traverse the shortest straight line connecting the third connection end 254-2 to the external connection end 251.

[0147] As an example, the first parallel slit 256 is a straight slit. The end of the first parallel slit 256 is configured to extend from one end edge of the plate-shaped portion 250 into the interior of the plate-shaped portion 250. In this example, the first parallel slit 256 is located at the end edge 255 of the plate-shaped portion 250 that is parallel to the Z-axis and is closest to the third connecting end 254-3. End edge 255 is the end edge in the first inner connecting portion 204 that is opposite to the second inner connecting portion 206.

[0148] In this example, the external connection end 251 is positioned on the plate-shaped portion 250 closer to the fourth circuit block CB4 side than the central Yc in the first direction (Y-axis direction). The external connection end 251 may be located at the end of the plate-shaped portion 250 on the end edge 253 side.

[0149] The second inner connecting portion 206 in this embodiment has a plate-shaped portion 260, a plurality of fourth connecting ends 264, and an outer connecting end 261. The plate-shaped portion 260 may be a plate-shaped member extending from above a fourth circuit portion 214-1 disposed at one end of a plurality of fourth circuit portions 214 arranged along the Y-axis direction to above a fourth circuit portion 214-3 disposed at the other end. The plate-shaped portion 260 may be disposed perpendicular to the XY plane. The plate-shaped portion 260 has an end edge 262 opposite to the fourth circuit block CB4 and an end edge 263 opposite to the end edge 262.

[0150] A fourth connecting end 264 is provided for each fourth circuit section 214. The fourth connecting end 264 is provided such that it protrudes from the end edge 262 of the plate-like portion 260 toward the fourth circuit section 214 and connects to the fourth circuit section 214. Figure 5 The fourth connecting end 264 is schematically shown in the diagram. The fourth connecting end 264 may have a portion extending parallel to the XY plane, or it may have a curved portion. The external connecting end 261 may protrude upward from the end edge 263.

[0151] In this example, a second parallel slit 310 is provided on the plate-shaped portion 260. The second parallel slit 310 is configured to traverse the shortest straight line connecting the fourth connection end 264-1, which is located closest to the third circuit block CB3 side of the fourth connection end 264, to the external connection end 261. Therefore, the second parallel slit 310 can lengthen the current path between the external connection end 261 and the fourth connection end 264-1, thereby increasing the resistance value of the current path to the fourth connection end 264-1. Thus, current to the fourth circuit section 214-1, which is located on the side surrounding the current center, can be suppressed.

[0152] As an example, the second parallel slit 310 is a straight slit. The end of the second parallel slit 310 is configured to extend from one end edge of the plate-shaped portion 260 into the interior of the plate-shaped portion 260. In this example, the second parallel slit 310 is located at the end edge 311 of the plate-shaped portion 260 that is parallel to the Z-axis and closest to the fourth connecting end 264-1. End edge 311 is the end edge in the second inner connecting portion 206 that is opposite to the first inner connecting portion 204.

[0153] In this example, the external connection end 261 is positioned on the plate-like portion 260 further away from the central Yc in the first direction (Y-axis direction) than the side opposite to the third circuit block CB3. The end edge 263 of the external connection end 261 on the plate-like portion 260 may be located at the end opposite to the third circuit block CB3.

[0154] Figure 5 The position of the external connection terminal of the shown block connection portion is limited by factors such as the shape of the housing portion 110 and the configuration of the external device. In this regard, as... Figure 5 As shown, by adjusting whether to set a slit in the connection part inside the block according to the position of the external connection terminal, the deviation of the resistance value of the current path in the entire circuit can be suppressed.

[0155] Figure 6 This diagram illustrates the positions of the slits in each connecting part. The height of the inter-block connecting part 202 is defined as h1, the height of the first inner slit 244-1 and the second inner slit 244-2 is defined as h2, the height of the first inner connecting part 204 is defined as h3, the height of the first parallel slit 256 is defined as h4, the height of the second inner connecting part 206 is defined as h5, and the height of the second parallel slit 310 is defined as h6. The height of each connecting part is the length in the Z-axis direction from position 354 to the upper end of each connecting part. The upper end of each connecting part can be the upper end of an external connecting terminal or the upper end of a plate-like portion. The height position of each slit is the Z-axis position of the upper end of each slit based on position 354. In addition, the width of the first internal slit 244-1 and the second internal slit 244-2 in the Z-axis direction is set to W1, the width of the first parallel slit 256 in the Z-axis direction is set to W2, and the width of the second parallel slit 310 in the Z-axis direction is set to W3.

[0156] The height position h4 of the first parallel slit 256 can be the same as the height position h2 of the first inner slit 244-1. Same height position means not only strictly identical but also includes cases with a predetermined error. This error can be smaller than the width W1 of the first inner slit 244-1 or smaller than the width W2 of the first parallel slit 256. By setting the first inner slit 244-1 and the first parallel slit 256 at the same height position, the electromagnetic inductance between the inter-block connection 202 and the first inner-block connection 204 can be suppressed more easily.

[0157] The height position h6 of the second parallel slit 310 can be the same as the height position h2 of the second inner slit 244-2. "Same height position" means not only that it is exactly the same, but also that it has a predetermined error. This error can be smaller than the width W1 of the second inner slit 244-2, or smaller than the width W3 of the second parallel slit 310. By setting the second inner slit 244-2 and the second parallel slit 310 at the same height position, the electromagnetic inductance between the inter-block connection 202 and the second inner-block connection 206 can be suppressed more easily.

[0158] It should be noted that when the height h1 of the inter-block connection 202 and the height h3 of the first inner block connection 204 are different, the height position h4 of the first parallel slit 256 can be different from the height position h2 of the first inner slit 244-1. For example, when the height h1 is higher than the height h3, the height position h2 is higher than the height position h4. Similarly, when the height h1 is lower than the height h3, the height position h2 is lower than the height position h4. This makes it easier to suppress electromagnetic inductance between the inter-block connection 202 and the first inner block connection 204. Similarly, when the height h1 of the inter-block connection 202 and the height h5 of the second inner block connection 206 are different, the height position h6 of the second parallel slit 310 can be different from the height position h2 of the second inner slit 244-2.

[0159] (Second Embodiment)

[0160] Figure 7 This is a diagram showing another example of the configuration of the slits in the connecting parts. In this example, the inter-block connecting part 202, besides... Figure 5 In addition to the configuration shown, it also has a third internal slit 244-3, a fourth internal slit 244-4 and an end slit 317.

[0161] An end-edge slit 317 and a third inner slit 244-3 are provided in the overlapping region 351. The end-edge slit 317 and the third inner slit 244-3 are positioned closer to the end-edge 244 than the first inner slit 244-1. The end-edge slit 317 is a slit extending from the end-edge 224 along the Z-axis. In this example, the end-edge slit 317 is provided on the end-edge 224 between the second connecting end 232-2 and the second connecting end 232-3. The third inner slit 244-3 is connected to the end-edge slit 317 and extends along the Y-axis. In this example, the third inner slit 244-3 is positioned from the end-edge slit 317 to a position closer to the inner side of the second connecting end 232-3. "Inner side" refers to the side closer to the end-edge slit 242. With this configuration, the resistance value of the current path connected to the second connecting end 232-3 can be further adjusted.

[0162] In this example, the first internal connection part 204, besides Figure 5 In addition to the configuration shown, a third parallel slit 257 and a slit 259 are also included. The third parallel slit 257 and slit 259 are provided in the overlapping region 351. The slit 259 and the third parallel slit 257 are positioned closer to the end edge 252 than the first parallel slit 256. The slit 259 extends from the end edge 252 along the Z-axis. In this example, the slit 259 is provided at the end edge 252 between the third connecting end 254-2 and the third connecting end 254-3. The third parallel slit 257 is connected to the slit 259 and extends along the Y-axis. In this example, the third parallel slit 257 is positioned from the slit 259 to a position closer to the inside of the third connecting end 254-3. "Inner" refers to the side closer to the end edge 255. With this configuration, the resistance value of the current path connected to the third connecting end 254-3 can be further adjusted.

[0163] Preferably, the slits in the inter-block connecting portion 202 and the slits in the first inner connecting portion 204 of the overlapping region 351 are arranged in the same manner. "Same manner" can mean that the slits are arranged so that they overlap when viewed from the X-axis direction. Furthermore, it is preferable that the number of slits extending along a first direction (e.g., the Y-axis direction) in the inter-block connecting portion 202 and the first inner connecting portion 204 of the overlapping region 351 is the same. In this example, there are two slits extending along the Y-axis direction in the inter-block connecting portion 202 (first inner slit 244-1, third inner slit 244-3), and two slits extending along the Y-axis direction in the first inner connecting portion 204 (first parallel slit 256, third parallel slit 257). Similarly, it is preferable that the number of slits extending along a second direction (e.g., the Z-axis direction) different from the first direction in the inter-block connecting portion 202 and the first inner connecting portion 204 of the overlapping region 351 is also the same. In this example, there is one slit extending along the Z-axis direction in the inter-block connection 202 (end slit 317), and one slit extending along the Z-axis direction in the inner connection 204 of the first block (slit 259). By similarly arranging slits in the two opposing connection parts, electromagnetic inductance between the two connection parts can be suppressed more easily.

[0164] It should be noted that, preferably, in the overlapping region 352, the slits of the inter-block connection portion 202 and the slits of the second inner-block connection portion 206 are also configured in the same way. In this example, the second inner-block connection portion 206, in addition to Figure 5In addition to the configuration shown, a fourth parallel slit 309 is also included. The fourth parallel slit 309 is a slit extending along the Y-axis from the end edge opposite to end edge 311. The height of the fourth parallel slit 309 is located between the second parallel slit 310 and position 354. The fourth parallel slit 309 can extend to a position inside the fourth connecting end 264-3, or it can extend to a position inside the fourth connecting end 264-2. "Inner" refers to the side closer to end edge 311. In this example, the fourth parallel slit 309 extends between the fourth connecting end 264-3 and the fourth connecting end 264-2.

[0165] Furthermore, the fourth internal slit 244-4 of the inter-block connection portion 202 is a slit extending along the Y-axis from the end edge opposite to the end edge slit 242 in the overlapping region 352. The height of the fourth internal slit 244-4 is located between the second internal slit 244-2 and position 354. The fourth internal slit 244-4 can extend to a position that is more inward than the first connecting end 231-3, or it can extend to a position that is more inward than the first connecting end 231-2. "Inner" refers to the side closer to the end edge slit 242. In this example, the fourth internal slit 244-4 extends between the first connecting end 231-3 and the first connecting end 231-2.

[0166] Preferably, the number of slits extending along a first direction (e.g., the Y-axis direction) in the inter-block connection portion 202 and the inner connection portion 206 of the overlapping region 352 is the same. In this example, there are two slits extending along the Y-axis direction in the inter-block connection portion 202 (second inner slit 244-2, fourth inner slit 244-4), and two slits extending along the Y-axis direction in the second inner connection portion 206 (second parallel slit 310, fourth parallel slit 309). Furthermore, it is preferable that the number of slits extending along a second direction (e.g., the Z-axis direction) in the inter-block connection portion 202 and the inner connection portion 206 of the overlapping region 352 is the same. In this example, the number of slits extending along the second direction (e.g., the Z-axis direction) in both the inter-block connection portion 202 and the inner connection portion 206 is zero.

[0167] Figure 8 This diagram shows an example of the shape of the fourth inner connecting portion 209. The fourth inner connecting portion 209 has a plate-like portion 270, a plurality of fifth connecting ends 274, and an external connecting end 271. The plate-like portion 270 may be a plate-like member extending from above a second circuit portion 212-1 disposed at one end of a plurality of second circuit portions 212 arranged along the Y-axis direction to above a second circuit portion 212-3 disposed at the other end. The plate-like portion 270 may be provided perpendicular to the XY plane. The plate-like portion 270 has an end edge 272 opposite to the second circuit block CB2 and an end edge 273 opposite to the end edge 272.

[0168] A fifth connecting end 274 is provided for each second circuit section 212. The fifth connecting end 274 is provided such that it protrudes from the end edge 272 of the plate-like portion 270 toward the second circuit section 212 and connects to the second circuit section 212. Figure 8 The fifth connecting end 274 is schematically shown in the diagram. The fifth connecting end 274 may have a portion extending parallel to the XY plane, or it may have a curved portion.

[0169] The external connection end 271 can protrude upward from the end edge 273. In this example, the external connection end 271 functions as the third external connection terminal tm3 (M2).

[0170] A slit may or may not be provided in the plate-shaped portion 270 of the fourth inner connecting part 209. If a slit is provided, a connection may be made in the plate-shaped portion 270 with... Figure 5 The plate-shaped portion 250 shown has the same slit. In this example, the distance between the fourth inner connecting portion 209 and the other connecting portions in the X-axis direction is greater than 1 cm. This distance can be 2 cm or more. Therefore, the electromagnetic inductance between the fourth inner connecting portion 209 and the other connecting portions is small. Therefore, even if a slit is provided to limit the current path and prevent the current from flowing in reverse, oscillations and noise can be suppressed.

[0171] Figure 9 This diagram shows an example of the shape of the third inner connecting portion 208. The third inner connecting portion 208 has a plate-like portion 280, a plurality of sixth connecting ends 284, and an external connecting end 281. The plate-like portion 280 may be a plate-like member extending from above a first circuit portion 211-1 disposed at one end of a plurality of first circuit portions 211 arranged along the Y-axis direction to above a first circuit portion 211-3 disposed at the other end. The plate-like portion 280 may be provided perpendicular to the XY plane. The plate-like portion 280 has an end edge 282 opposite to the first circuit block CB1 and an end edge 283 opposite to the end edge 282.

[0172] A sixth connecting end 284 is provided for each first circuit section 211. The sixth connecting end 284 is provided such that it protrudes from the end edge 282 of the plate-like portion 280 toward the first circuit section 211 and connects to the first circuit section 211. Figure 9 The sixth connecting end 284 is schematically shown in the diagram. The sixth connecting end 284 may have a portion extending parallel to the XY plane, or it may have a curved portion.

[0173] The external connection end 281 can protrude upward from the end edge 283. In this example, the external connection end 281 functions as a second external connection terminal tm2 (M1).

[0174] A slit may or may not be provided in the plate-shaped portion 280 of the third inner connecting part 208. If a slit is provided, a connection may be made in the plate-shaped portion 280 with... Figure 5 The plate-like portion shown has the same slit as 250. Figure 9 In the example shown, the current path between the external connection end 281 and the sixth connection end 284-2 is the shortest. This slit can be configured to traverse the straight line connecting the external connection end 281 and the sixth connection end 284-2. In this example, the distance between the third inner connection part 208 and the other connection parts in the X-axis direction is greater than 1 cm. This distance can be 2 cm or more. Therefore, the electromagnetic inductance between the third inner connection part 208 and the other connection parts is relatively small. Therefore, even with a slit that restricts the current path and prevents reverse current flow, oscillations and noise can be suppressed.

[0175] Figure 10 This is a schematic diagram showing the resistance of the inter-block connection 202 between each circuit section and the resistance of the intra-block connection section. Figure 10 In this context, Rs represents the increased resistance due to the slits provided in the inter-block connection portion 202 and the first block intra-block connection portion 204. Furthermore, Rt represents the increased resistance due to the narrow region being provided.

[0176] like Figure 10 As shown, by providing a slit in the inter-block connection portion 202, a resistor Rs can be added to the first circuit section 211-1 and the second circuit section 212-3. This allows the resistance values ​​of the current paths between the plurality of first circuit sections 211 and the plurality of second circuit sections 212 to be equalized. Furthermore, by providing a slit in the inner connection portion 204 of the first block, a resistor Rs can be added to the third circuit section 213-3. This allows the resistance values ​​of the current paths between the fourth external connection terminal tm4(N) and each of the third circuit sections 213 to be equalized. Moreover, by adding a resistor Rs, even when the current flows in a U-shape or C-shape, the current can be equalized between the inner and outer circuit sections. Furthermore, as... Figure 5 As shown, the resistance is more easily adjusted by providing a slit in the second inner connection portion 206. Figure 10 The resistor added due to the slit provided in the inner connection part 206 of the second block is omitted.

[0177] (Third Embodiment)

[0178] Figure 11 This figure shows another example of the inter-block connection portion 202. The inter-block connection portion 202 in this example has a narrow region 410, which differs from the inter-block connection portion 202 of the first or second embodiment. Other constructions are the same as in the first or second embodiment.

[0179] Narrow region 410 is located at the end opposite to narrow region 228 in the Y-axis direction. Narrow region 410 is narrower than other regions in the Z-axis direction. The width of narrow region 410 in the Z-axis direction and its length in the Y-axis direction can be the same as narrow region 228. By providing narrow region 228, the current path configuration balance of the inter-block connection 202 can be improved.

[0180] (Fourth Embodiment)

[0181] Figure 12 This diagram illustrates an example of a connection portion 371 and a connection portion 471 disposed opposite each other in a semiconductor device 100. In the first to third embodiments, two connection portions are disposed opposite each other, relative to one connection portion. In this example, one connection portion 471 is disposed opposite each other, relative to one connection portion 371. The lengths of the connection portions 371 and 471 in the Y-axis direction can be the same. In the semiconductor device of this embodiment, the circuit configuration is similar to... Figures 1 to 4D The examples given are different.

[0182] In this example, the gaps between the two opposing connections are preferably configured in the same manner as in the first to third embodiments. This facilitates the reverse flow of current between the two opposing connections, making it easier to suppress oscillations and noise.

[0183] exist Figure 12 In the example, each connecting portion of connecting portion 371 and connecting portion 471 has the same configuration as any one of the inter-block connecting portions 202 in the first to third embodiments. However, the configuration of the two connecting portions is not limited to this.

[0184] (Fifth Embodiment)

[0185] Figure 13 This is a diagram showing an example of the connecting part 571. The connecting part 571 can serve as... Figures 1 to 12 This can be used for any of the connecting parts that I wish to describe. The structure of connecting part 571, excluding the gap, is similar to... Figures 1 to 12 The connection part of any of them that I want to explain is the same.

[0186] Connector 571 Figures 1 to 12 In addition to the slit in any of the connecting parts to be described, there is one or more side slits 501. The side slit 501 is a slit extending along the Z-axis direction. The side slit 501 can be configured to extend along the Z-axis direction from the slit 575 extending along the Y-axis direction. Slit 575 corresponds to... Figures 1 to 12The description may include any of the internal slits, or the first parallel slit 256, the third parallel slit 257, the second parallel slit 310, and the fourth parallel slit 311. The connecting portion 571 may have a side slit 501 extending from the slit 575 along the positive side of the Z-axis and a side slit 501 extending along the negative side of the Z-axis.

[0187] Furthermore, the connecting portion 571 may also have a side slit 502 extending from the end edge 572 on the circuit portion side along the Z-axis direction. The side slit 501 and the side slit 502 may be alternately arranged between the slit 575 and the end edge 572 along the Y-axis direction.

[0188] Furthermore, the connecting portion 571 may also have a side slit 503 extending along the Z-axis direction from the end edge 573 on the side opposite to the end edge 572. The side slits 501 and 503 can be alternately arranged along the Y-axis direction between the slit 575 and the end edge 573. With this configuration, it becomes easier to adjust the length of each current path.

[0189] (Sixth Embodiment)

[0190] Figure 14 This diagram illustrates another configuration example of multiple connections. In this embodiment, three or more connections are arranged in a row along the X-axis. In the semiconductor device of this embodiment, the circuit configuration is similar to... Figures 1 to 4D The examples given are different. Figure 14 In this example, in addition to the inter-block connection portion 202, the first intra-block connection portion 204, and the second intra-block connection portion 206 described in the first or second embodiment, a connection portion 604 and a connection portion 606 are also provided. The connection portion 604 and the connection portion 606 are formed of a plate-shaped conductive material and are connected to any one of the circuit portions. In this example, the first intra-block connection portion 204 is an example of a first connection portion, the inter-block connection portion 202 is an example of a second connection portion, and the connection portion 604 is an example of a fourth connection portion.

[0191] The inter-block connecting portion 202 has a first main surface 305-1 and a second main surface 305-2. A first inner-block connecting portion 204 and a second inner-block connecting portion 206 are arranged opposite to the first main surface 305-1. Connecting portions 604 and 606 are arranged opposite to the second main surface 305-2. The first inner-block connecting portion 204 and connecting portion 604 are arranged to sandwich the inter-block connecting portion 202 in the middle. The second inner-block connecting portion 206 and connecting portion 606 are arranged to sandwich the inter-block connecting portion 202 in the middle. Connecting portions 604 and 606 are arranged along the Y-axis.

[0192] The thickness of the first inner connecting portion 204 and the second inner connecting portion 206 in the X-axis direction is set to T3, the thickness of the inner connecting portion 202 is set to T2, and the thickness of the connecting portion 604 and the connecting portion 606 is set to T1. Furthermore, the distance in the X-axis direction between the first inner connecting portion 204 and the second inner connecting portion 206 and the inter-block connecting portion 202 is set to D2, and the distance in the X-axis direction between the connecting portion 604 and the connecting portion 606 and the inter-block connecting portion 202 is set to D1. Distances D1 and D2 are, for example, 1 cm or less. Distances D1 and D2 can be 0.5 mm or less.

[0193] As described in the first or second embodiment, the direction of the current in the current paths of the first inner connecting portion 204 and the second inner connecting portion 206 is opposite to the direction of the current in the opposite current path in the inter-block connecting portion 202. Similarly, it is preferable that the direction of the current in the current paths of the connecting portions 604 and 606 is opposite to the direction of the current in the opposite current path in the inter-block connecting portion 202. That is, in the connecting portions arranged along the X-axis direction, the directions of the current in the opposite current paths can be alternately reversed. Furthermore, in the two connecting portions (e.g., the first inner connecting portion 204 and the connecting portion 604) that sandwich the inter-block connecting portion 202 in the middle, the directions of the current in the opposite current paths are the same. As a result, electromagnetic mutual inductance between the respective connecting portions can be suppressed.

[0194] Figure 15 It is shown Figure 14 Examples of slit configurations for the connecting portions are shown. The inter-block connecting portion 202, the first inner-block connecting portion 204, and the second inner-block connecting portion 206 may have the same structure as in the first or second embodiment. Connecting portion 604 may have the same slit and terminal configuration as the first inner-block connecting portion 204. Connecting portion 606 may have the same slit and terminal configuration as the second inner-block connecting portion 206.

[0195] In this example, current flows from the external connection end 261-1 of the second inner connection portion 206 to the fourth connection end 264 of the second inner connection portion 206. Similarly, current flows from the external connection end 261-2 of the connection portion 606 to the fourth connection end 264 of the connection portion 606. The external connection ends 261-1 and 261-2 can be connected to an external power source, for example. The current flowing through the fourth connection end 264 of the second inner connection portion 206 and the current flowing through the fourth connection end 264 of the connection portion 606 both flow to the first connection end 231 of the inter-block connection portion 202. In the inter-block connection portion 202, current flows from the first connection end 231 to the second connection end 232. The current flowing through the second connection end 232 branches off to the third connection end 254 of the first inner connection portion 204 and the third connection end 254 of the connection portion 604. In the first inner connection portion 204, current flows from the third connection end 254 to the outer connection end 251-1. In the connection portion 604, current flows from the third connection end 254 to the outer connection end 251-2. The outer connection ends 251-1 and 251-2 can be connected to an external power source.

[0196] according to Figure 15 The configuration shown allows the directions of current in opposing current paths to be reversed. For example, the direction of current in current path 300-1 of inter-block connection 202 is opposite to the direction of current in current path 301-1 of first intra-block connection 204 and the direction of current in current path 302-1 of connection 604. Furthermore, the direction of current in current path 300-2 of inter-block connection 202 is opposite to the direction of current in current path 302-1 of second intra-block connection 206 and the direction of current in current path 302-2 of connection 606.

[0197] The width W in the Z-axis direction of the slits extending along the Y-axis of each connecting part can be the same or different. In this example, the width of the first inner slit 244-1 and the second inner slit 244-2 is set to W21. Furthermore, the width of the first parallel slit 256-1 of the first inner connecting part 204 is set to W31, and the width of the first parallel slit 256-2 of the connecting part 604 is set to W11. Furthermore, the width of the second parallel slit 310-1 of the second inner connecting part 206 is set to W32, and the width of the second parallel slit 310-2 of the connecting part 606 is set to W12. Widths W11, W21, W31, W12, and W32 can each be the same.

[0198] In other examples, the slit width W can vary depending on the amount of current (A) flowing through each connection. In this example, as described above, the current flowing through the inner connection 204 and connection 604 of the first block flows to the inter-block connection 202. Furthermore, the current flowing through the inner connection 206 and connection 606 of the second block flows to the inter-block connection 202. Therefore, the current flowing through the inter-block connection 202 is greater than the current flowing through the other connections.

[0199] The width W21 of the first internal slit 244-1 and the second internal slit 244-2 of the inter-block connection 202 can be larger than the widths W11, W31, W12, and W32 of the slits of other connections. This reduces the width of the current path 300 in the Z-axis direction of the inter-block connection 202, making it easier to suppress electromagnetic inductance between the connections.

[0200] Furthermore, in other examples, the width W of the slits in each connection can be adjusted according to the thickness T of each connection. The greater the thickness T of the connection, the greater the width W of the slits. This suppresses deviations in the cross-sectional area of ​​the current path between the connections and also suppresses deviations in the resistance value. Thus, by adjusting the magnitudes of the currents flowing in opposite directions between opposing current paths, electromagnetic inductance can be suppressed.

[0201] The present invention has been described above using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. Those skilled in the art will recognize that various changes or improvements can be made to the above embodiments. As can be seen from the claims, such changes or improvements are also included within the technical scope of the present invention.

[0202] Label Explanation

[0203] 36···Conductive pattern, 50···Insulating substrate, 90···Connecting component, 100···Semiconductor device, 110···Housing portion, 112···Cut-out portion, 114···Terminal mounting surface, 116···Protrusion, 120···Base portion, 201···Line, 202···Inter-block connection portion, 204···First block internal connection portion, 206···Second block internal connection portion, 208···Third block internal connection portion, 209···Fourth block internal connection portion, 210···Connection area, 211···First circuit portion, 212···Second Circuit section, 213··· Third circuit section, 214··· Fourth circuit section, 220··· Plate-shaped portion, 222··· External connection end, 224··· End edge, 226··· End edge, 228··· Narrow area, 230··· Current path, 231··· First connection end, 232··· Second connection end, 242··· End edge slit, 244··· Internal slit, 250··· Plate-shaped portion, 251··· External connection end, 252··· End edge, 253··· End edge, 254··· Third connection end, 255··· End 256···First parallel slit, 257···Third parallel slit, 259···Slit, 260···Plate-shaped portion, 261···External connecting end, 262···End edge, 263···End edge, 264···Fourth connecting end, 270···Plate-shaped portion, 271···External connecting end, 272···End edge, 273···End edge, 274···Fifth connecting end, 280···Plate-shaped portion, 281···External connecting end, 282···End edge, 283···End edge, 284···Sixth connecting end, 300, 301, 302... Current path, 303, 305, 307... Main surface, 309... Fourth parallel slit, 310... Second parallel slit, 311... End edge, 317... End edge slit, 351, 352... Overlapping area, 354... Position, 371... Connecting part, 410... Narrow area, 471... Connecting part, 501, 502, 503... Side branch slit, 571... Connecting part, 572, 573... End edge, 575... Slit, 604, 606... Connecting part.

Claims

1. A semiconductor device, characterized by comprising: Possessing: a plurality of circuit portions; and a first connecting portion, a second connecting portion, and a third connecting portion formed of a plate-shaped conductive material and connected to any one of the circuit portions, main surfaces of the first connecting portion, the second connecting portion, and the third connecting portion are arranged opposite to each other, the first connecting portion is arranged opposite to a first main surface of the second connecting portion, the third connecting portion is arranged opposite to the first main surface of the second connecting portion, the first connecting portion, the second connecting portion, and the third connecting portion each have: a circuit connecting end portion connected to the circuit portion; and a path restricting portion that restricts a current path of the main surface, a direction of a current flowing through the current path between the path restricting portion and the circuit connecting end portion is different between the first connecting portion and the second connecting portion, and different between the third connecting portion and the second connecting portion.

2. The semiconductor device according to claim 1, wherein the second connecting portion has: an end edge slit provided to face an inside of the second connecting portion from a circuit side end edge where the circuit connecting end portion is provided, a first inside slit provided in connection with the end edge slit and extending along the circuit side end edge, a second inside slit provided in connection with the end edge slit and extending along the circuit side end edge and to an opposite side to the first inside slit, the first connecting portion and the third connecting portion are arranged in alignment in a direction parallel to the main surface of the second connecting portion, the first connecting portion has a first parallel slit extending from an end edge opposite to the third connecting portion in a direction parallel to the first inside slit, the third connecting portion has a second parallel slit extending from an end edge opposite to the first connecting portion in a direction parallel to the second inside slit.

3. A semiconductor device, characterized by comprising: Possessing: a plurality of circuit portions; and a first connecting portion, a second connecting portion, and a fourth connecting portion formed of a plate-shaped conductive material and connected to any one of the circuit portions, main surfaces of the first connecting portion, the second connecting portion, and the fourth connecting portion are arranged opposite to each other, the first connecting portion is arranged opposite to a first main surface of the second connecting portion, the fourth connecting portion is arranged opposite to a second main surface of the second connecting portion, the first connecting portion, the second connecting portion, and the fourth connecting portion each have: a circuit connecting end portion connected to the circuit portion; and a path restricting portion that restricts a current path of the main surface, a direction of a current flowing through the current path between the path restricting portion and the circuit connecting end portion is different between the first connecting portion and the second connecting portion, and different between the fourth connecting portion and the second connecting portion.

4. The semiconductor device according to claim 3, wherein the path restricting portions of the first connecting portion, the second connecting portion, and the fourth connecting portion have one or more first slits extending in a first direction, currents flowing through the first connection portion and the fourth connection portion flow toward the second connection portion, the first slit of the second connection portion has a width larger than both the width of the first slit of the first connection portion and the width of the first slit of the fourth connection portion.

5. The semiconductor device according to any one of claims 1 to 3, wherein the first connection portion and the second connection portion have an overlapping region in which the first connection portion and the second connection portion overlap in a direction orthogonal to the main surface, the path restriction portion of the first connection portion and the second connection portion has one or more first slits extending in a first direction, in the overlapping region, the number of the first slits provided in the first connection portion is the same as the number of the first slits provided in the second connection portion.

6. The semiconductor device according to any one of claims 1 to 4, wherein the direction of the current flowing through the current path between the path restriction portion and the circuit connection end portion is opposite between the first connection portion and the second connection portion.

7. The semiconductor device according to any one of claims 1 to 4, wherein the first connection portion and the second connection portion respectively have the circuit connection end portion and the path restriction portion arranged so that at least a part of the current flows around the periphery of the path restriction portion, the direction in which the current flows around the periphery of the path restriction portion is opposite between the first connection portion and the second connection portion.

8. The semiconductor device according to any one of claims 1 to 4, wherein the main surface of the first connection portion and the main surface of the second connection portion are arranged in parallel.

9. The semiconductor device according to claim 5, wherein the path restriction portion of the first connection portion and the second connection portion has one or more second slits extending in a second direction different from the first direction, in the overlapping region, the number of the second slits provided in the first connection portion is the same as the number of the second slits provided in the second connection portion.

10. The semiconductor device according to claim 5, wherein the upper end of the first connection portion and the upper end of the second connection portion are arranged at the same height, in the overlapping region, the first slits provided in the first connection portion and the first slits provided in the second connection portion are arranged at the same height.

11. The semiconductor device according to claim 5, wherein the upper end of the first connection portion is arranged at a position higher than the upper end of the second connection portion, in the overlapping region, the first slits provided in the first connection portion are arranged at a position higher than the first slits provided in the second connection portion.

12. The semiconductor device according to claim 5, wherein the width of the first slit of the first connection portion is different from the width of the first slit of the second connection portion.

13. The semiconductor device according to claim 12, wherein the thickness of the first connection portion is larger than the thickness of the second connection portion, The width of the first slit of the first connecting portion is greater than the width of the first slit of the second connecting portion.

14. The semiconductor device according to claim 12, wherein The current flowing through the first connecting portion is greater than the current flowing through the second connecting portion, The width of the first slit of the first connecting portion is greater than the width of the first slit of the second connecting portion.

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