Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device comprises: a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a relatively high melting point; a die carrier comprising a second metal having a relatively high melting point; a first intermetallic compound arranged between the semiconductor die and the die carrier and comprising the first metal and a third metal having a relatively low melting point; a second intermetallic compound arranged between the first intermetallic compound and the die carrier and comprising the second metal and the third metal; and a precipitate of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and comprising the third metal and a fourth metal having a relatively high melting point.

Description

Technical Field

[0001] The present disclosure relates generally to semiconductor devices and methods for fabricating semiconductor devices. Background Art

[0002] Conductor devices may include solder joints, particularly diffusion solder joints, which electrically and / or mechanically secure the semiconductor die to a die carrier. In order for the semiconductor device to meet stringent reliability requirements, such solder joints may need to be highly resilient to mechanical stresses. However, dislocation movement in such solder joints is a common problem that may lead to cracks and, therefore, mechanical and / or electrical failure of the solder joints. Therefore, it may be desirable to increase the stability of the solder joints and thereby reduce or eliminate dislocation movement and crack formation. Improved semiconductor devices and improved methods for manufacturing semiconductor devices may help address these and other problems.

[0003] The problem on which the invention is based is solved by the features of the independent claims. Further advantageous examples are described in the dependent claims. Summary of the invention

[0004] Various aspects relate to a semiconductor device comprising: a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a higher melting point; a die carrier comprising a second metal having a higher melting point; a first intermetallic compound disposed between the semiconductor die and the die carrier and comprising the first metal and a third metal having a lower melting point; a second intermetallic compound disposed between the first intermetallic compound and the die carrier and comprising the second metal and the third metal; and a precipitate of a third intermetallic compound disposed between the first intermetallic compound and the second intermetallic compound and comprising the third metal and a fourth metal having a higher melting point.

[0005] Various aspects relate to a method for manufacturing a semiconductor device, the method comprising: providing a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a relatively high melting point; providing a die carrier comprising a second metal having a relatively high melting point; providing a solder material comprising a third metal having a relatively low melting point; providing a layer of a fourth metal having a relatively high melting point on the semiconductor die or the die carrier; soldering the semiconductor die to the die carrier and thereby producing: a first intermetallic compound, which is arranged between the semiconductor die and the die carrier and comprises the first metal and the third metal; a second intermetallic compound, which is arranged between the first intermetallic compound and the die carrier and comprises the second metal and the third metal; and a precipitate of a third intermetallic compound, which is arranged between the first intermetallic compound and the second intermetallic compound and comprises the third metal and the fourth metal. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The accompanying drawings illustrate examples and together with the description are used to explain the principles of the present disclosure. Other examples and many expected advantages of the present disclosure will be more readily appreciated as they become more readily understood with reference to the detailed description below. The elements of the accompanying drawings are not necessarily to scale with respect to each other. The same reference numerals represent corresponding similar parts.

[0007] Figure 1 A schematic cross-sectional view of a semiconductor device is shown, wherein a precipitate of a third intermetallic compound is arranged within a diffusion solder joint including a first intermetallic compound and a second intermetallic compound.

[0008] Figure 2 A schematic cross-sectional view of a diffusion solder joint without precipitates is shown, wherein a crack has formed in the diffusion solder joint.

[0009] Figure 3 A scanning electron microscope image of a semiconductor device including a diffusion solder joint with precipitates is shown.

[0010] Figure 4 includes Figure 4A and 4B , and shows a semiconductor die having a metal layer stack including a soft solder material layer ( Figure 4A ) and a die carrier having a metal layer stack including a soft solder material layer ( Figure 4B ).

[0011] Figure 5 includes Figure 5A and 5B , and two methods for depositing solder material on a substrate are shown: by dispensing ( Figure 5A ) and by depositing a preform ( Figure 5B).

[0012] Figure 6 includes Figures 6A to 6E , and illustrates a semiconductor device at various manufacturing stages according to an exemplary method for manufacturing a semiconductor device.

[0013] Figure 7 is a flow chart of a method for manufacturing a semiconductor device. DETAILED DESCRIPTION

[0014] In the following detailed description, directional terms such as "top", "bottom", "left", "right", "upper", "lower", etc. may be used with reference to the orientation of the Figure being described. Because components of the present disclosure can be positioned in a number of different orientations, the directional terminology is used for illustration purposes.

[0015] To the extent that the terms "include," "have," "have" or other variations thereof are used in the specific embodiments or claims, these terms are intended to mean included in a manner similar to the term "comprising." The terms "coupled" and "connected" and their derivatives may be used. It should be understood that these terms may be used to indicate that two elements cooperate or interact with each other, regardless of whether they are in direct physical or electrical contact, or they are not in direct contact with each other. Intermediate elements or layers may be provided between "combined," "attached," or "connected" elements. However, it is also possible that "combined," "attached," or "connected" elements are in direct contact with each other. Likewise, the term "exemplary" means only an example, rather than referring to the best or optimal.

[0016] Examples of semiconductor devices described below may use various types of semiconductor dies or circuits incorporated in semiconductor dies, including AC / DC or DC / DC converter circuits, power MOS transistors, power Schottky diodes, JFETs (junction gate field effect transistors), power bipolar transistors, power integrated circuits, etc. Examples may also use semiconductor dies including transistor structures, wherein at least one electrical contact pad is arranged on a first main surface of the semiconductor die, and at least one other electrical contact pad is arranged on a second main surface of the semiconductor die opposite to the first main surface of the semiconductor die.

[0017] The symbol XY may refer to an alloy of X which includes at least Y as a further component. In particular, it may refer to an alloy of X which includes Y as the only residual component (i.e. a closed composition). That is, in the second case, the symbol XY means that the alloy XY has a composition consisting of X (in weight percentage of X) and Y (in weight percentage of Y), the balance being only an inevitable factor. The symbols XYZ ... have a similar meaning, i.e. an "open composition" or "closed composition", in which X, Y, Z, ... form the only components of the alloy (except for the inevitable elements). The same applies to the solder composition.

[0018] Figure 1 A semiconductor device 100 is shown comprising a semiconductor die 110 and a die carrier 120. The semiconductor die 110 has a metallization layer 130 arranged on one side, wherein the metallization layer 130 comprises a first metal having a higher melting point. The die carrier 120 comprises a second metal, which also has a higher melting point.

[0019] The metallization layer 130 may be arranged between the semiconductor die 110 and the die carrier 120 , and it may, for example, be a backside metallization layer of the semiconductor die 110 .

[0020] The semiconductor device 100 also includes a first intermetallic compound (IMC) 140 disposed between the semiconductor die 110 and the die carrier 120 and a second intermetallic compound 150 disposed between the first IMC 140 and the die carrier 120 .

[0021] The first IMC 140 includes a first metal and a third metal, wherein the third metal has a lower melting point. The second IMC includes a second metal and a third metal.

[0022] The semiconductor device 100 further includes a precipitate 160 of a third intermetallic compound disposed between the first IMC 140 and the second IMC 150. The precipitate includes a third metal and a fourth metal having a higher melting point.

[0023] In the context of the present disclosure, the melting point of a metal with a "higher melting point" may be higher than the melting point of another metal. For example, the first, second, and fourth metals may each have a melting point higher than the melting point of the third metal. The melting points of the first, second, and fourth metals may, for example, be 10°C, 20°C, 30°C, 50°C, or more higher than the melting point of the third metal. A "lower melting point" may be understood similarly.

[0024] Semiconductor device 100 may be, for example, a power semiconductor device, and semiconductor die 110 may be a power semiconductor die. First IMC 140 , second IMC 150 , and deposit 160 may be part of solder joints that electrically and / or mechanically couple semiconductor die 110 to die carrier 120 .

[0025] The third metal may be a solder material, in particular a soft solder material. The first IMC 140 and the second IMC 150 may be manufactured by soldering the semiconductor die 110 to the die carrier 120. When the semiconductor die 110 is soldered to the die carrier 120, the semiconductor die 110 may still be part of a wafer, or may be singulated before soldering.

[0026] The die carrier 120 may be, for example, part of a lead frame. The die carrier 120 may include the second metal or it may also consist of the second metal. According to an example, the die carrier 120 may include a plating layer, for example, a Ni plating layer. The plating layer may provide the second metal. However, it is also possible that a large part of the die carrier 120 may provide the second metal.

[0027] The first metal may be one of Cu, Ni, Ag, Al, Au, Pd or Pt. The second metal may be one of Cu, Ni, Ag, Al, Au, Pd or Pt. The third metal may be one of Sn, In, Zn or Ga. The fourth metal may be one of Ag, Au, Pd or Pt. According to one example, a metal alloy may be used instead of a single metal. For example, the first metal and / or the second metal may be NiV or NiP. The third metal may be, for example, SnAgCu instead of Sn.

[0028] According to an example, the first metal is Ni, the second metal is Cu, the third metal is Sn, the fourth metal is Ag, the first IMC 140 includes Ni3Sn4, the second IMC 150 includes Cu3Sn, and the precipitate 160 includes Ag3Sn. According to another example, the first metal and the second metal are both Cu or both Ni (in other words, the first IMC 140 and the second IMC 150 may have the same or similar material composition), the third metal is Sn, and the fourth metal is Ag.

[0029] The thickness z of the combined first and second IMC 140 and 150 may be, for example, in the range of 1 μm to 10 μm, in particular 2 μm to 6 μm or 2.5 μm to 3.5 μm. The thickness z may be the thickness of a solder joint or bonding wire between the semiconductor die 110 and the die carrier 120 .

[0030] The size of the precipitate 160, for example, the diameter may be in the range of 0.5 μm to 3 μm or 1 μm to 2 μm. The precipitate may, for example, have an ablong, angular or irregular shape on average. The diameter of each precipitate 160 may be less than 60% of the thickness z.

[0031] The deposits 160 may be spaced apart from each other. For example, on average, the deposits may be spaced apart by half a diameter between two adjacent deposits 160, or by one diameter between two adjacent deposits, or by about 0.5 μm or about 1.0 μm between two adjacent deposits.

[0032] The precipitate 160 may be disposed, for example, at the interface between the first IMC 140 and the second IMC 150 (by Figure 1). The deposits 160 may be arranged side by side along the interface. It is also possible that the deposits 160 are arranged substantially in the middle between the semiconductor die 110 and the die carrier 120. Alternatively, the deposits 160 may be arranged closer to the semiconductor die 110 or closer to the die carrier 120.

[0033] The location of the precipitate 160 may depend on the reaction rates used to form the IMCs 140 and 150. For example, the same reaction rates of the first IMC 140 and the second IMC 150 may result in the precipitate being disposed midway between the semiconductor die 110 and the die carrier 120.

[0034] The precipitate 160 may have the effect of preventing the formation of cracks in the solder joint including the first IMC 140 and the second IMC 150 or at least preventing them from growing in a size explained below.

[0035] Figure 2 A semiconductor device 200 is shown including a semiconductor die 110, a die carrier 120, and a solder joint 210 that does not include a precipitate 160. A crack 220 may form in the solder joint 210, for example, due to a difference in the coefficients of thermal expansion of the semiconductor die 110 and the die carrier 120. For example, due to dislocation motion, the crack 220 may grow (e.g., along a Figure 2 , parallel to the surfaces of semiconductor die 110 and die carrier 120 ), and may eventually lead to mechanical and / or electrical failure of solder joint 210 .

[0036] However, the precipitates 160 may strengthen (harden) the solder joint between the semiconductor die 110 and the die carrier 120 and may prevent dislocation motion in the IMCs 140 , 150 (“precipitation hardening”). Thus, the precipitates 160 may improve the reliability of the semiconductor device 100 .

[0037] Figure 3 A scanning electron microscope image of an exemplary semiconductor device 300 is shown. Semiconductor device 300 may be similar or identical to semiconductor device 100.

[0038] In the semiconductor device 300, the semiconductor die 110 may include Si, for example. The metallization layer 130 may include or consist of NiV. The first IMC 140 may include or consist of Ni3Sn4. The second IMC 150 may include or consist of Cu3Sn. The precipitate 160 may include or consist of Ag3Sn. The die carrier 120 may include or consist of Cu.

[0039] According to an example, various parts of the semiconductor device 300 may have the following material compositions:

[0040] -Metalization layer 130: 5wt% V, 95wt% Ni

[0041] -First IMC 140: 32wt% Ni, 22wt% Cu, 46wt% Sn

[0042] - Second IMC 150: 70wt% Cu, 30wt% Sn

[0043] -Precipitate 160: 8wt% Cu, 70wt% Ag, 22wt% Sn

[0044] -Die carrier 120: 100 wt% copper

[0045] According to examples, the above material compositions may vary. For example, the percentage of each component may be up to 3 wt % higher or lower than indicated above.

[0046] According to another example, the various parts of the semiconductor device 300 may have the following material compositions:

[0047] -Metalization layer 130: 5wt% V, 95wt% Ni

[0048] -First IMC 140: 49wt% Ni, 51wt% Sn

[0049] - Second IMC 150: 49wt% Ni, 51wt% Sn

[0050] -Precipitate 160: 78wt% Ag, 22wt% Sn

[0051] -Die carrier 120: 100 wt% Cu

[0052] The semiconductor device 300 may further include a plating layer disposed on the die carrier 120 below the second IMC 150. The plating layer may include 100 wt % Ni.

[0053] Figure 4A A precursor arrangement 400 is shown including a semiconductor die 110 and a layer stack 410 arranged on the semiconductor die 110. The precursor arrangement 400 may be used in the manufacture of the semiconductor devices 100 and 300.

[0054] The layer stack 410 may include a metallization layer 130, a first layer 420 disposed on the metallization layer 130, and a second layer 430 disposed on the first layer 420. The first layer 420 may be a solder material layer, and the second layer 430 may be a cap layer.

[0055] The first layer 420 may include a third metal having a lower melting point, and the second layer 430 may include a fourth metal having a higher melting point.

[0056] The layer stack 410 may further include a third layer 440 and a fourth layer 450 disposed between the metallization layer 130 and the semiconductor die 110 .

[0057] According to an example, the metallization layer 130 includes NiV and may have a thickness of, for example, 500 nm to 750 nm. The first layer 420 may include Sn and may have a thickness of about 1200 nm. The first layer 430 may include Ag and may have a thickness of about 200 nm. The third layer 440 may include Ti and may have a thickness of about 200 nm. The fourth layer 450 may include Al and may have a thickness of about 200 nm.

[0058] The precursor arrangement 400 may be placed on the die carrier 120 and subsequently a diffusion soldering process may be performed to manufacture the semiconductor device 100 or 300 .

[0059] The precursor arrangement 400 may show solder material (eg, Sn) arranged on the semiconductor die 110 prior to diffusion soldering and fabrication of the IMCs 140, 150 and the precipitate 160. However, the solder material may also be provided on the die carrier 120 instead.

[0060] Figure 4B Another precursor arrangement 400' is shown, comprising a die carrier 120, a first layer 420 and a second layer 430. A semiconductor die 110 having a metallization layer 130 arranged on one side and optionally a third and fourth layer 440, 450 may be placed on the second layer 430 and subsequently a diffusion soldering process may be performed to manufacture the semiconductor device 100 or 300.

[0061] Figure 5A An exemplary method for depositing a solder material 510 on a substrate 520 is shown. The solder material may, for example, include Sn. The substrate 520 may include a semiconductor die 110 or alternatively a die carrier 120 .

[0062] like Figure 5A As shown, solder material 510 may be deposited on substrate 520, for example, by a dispensing process. For example, dispensing unit 530 may be used to dispense solder material 510 in a fluid form. Solder material 510 may include flux, which may be removed from solder material 510 after the dispensing process.

[0063] Figure 5BAnother exemplary method for depositing solder material on substrate 520 is shown. According to the method, solder material is provided as a preform 540, which can be deposited on substrate 520 in its entirety (e.g., by a pick-and-place process). Solder preform 540 can include a certain minimum thickness in order to have sufficient structural stability to handle the deposition process. The minimum thickness can be, for example, greater than 10 μm or greater than 20 μm.

[0064] The solder preform 540 may comprise a (temporary) carrier, wherein the solder material is arranged on the carrier. The solder preform 540 may not contain any flux.

[0065] FIG. 6A to FIG. 6E A semiconductor device 100 is shown at various stages of fabrication according to an exemplary method for fabricating a semiconductor device.

[0066] like Fig. 6A As shown, a semiconductor die 110 having a metallization layer 130 is provided, wherein the metallization layer 130 includes a first metal having a higher melting point. For example, the metallization layer 130 can be disposed on the semiconductor die 110 using a plating process or a dispensing process. In addition, a die carrier 120 including a second metal having a higher melting point is provided.

[0067] like Figure 6B As shown, a solder material 610 including a third metal having a lower melting point may be provided on the die carrier 120. For example, the solder material 610 may be provided by dispensing or as described with reference to Figure 5A and 5B The solder preform described above is used to provide the solder material 610. In addition, a metal layer 620 including a fourth metal having a higher melting point may be provided on the solder material 610. Providing the metal layer 620 may include, for example, a dispensing process or a plating process.

[0068] As Figure 6B The substitution shown, compared Figure 6C , the solder material 610 may be provided on the semiconductor die 110 (particularly on the metallization layer 130 ) instead. The metal layer 620 may be provided on the solder material 610 , for example, after the solder material 610 is deposited on the semiconductor die 110 .

[0069] like Fig.6DAs shown in , the semiconductor die 110 is diffusion soldered to the die carrier 120. Diffusion soldering may include placing the semiconductor die 110 onto the die carrier 120 so that the metallization layer 130, the solder material 610, and the metal layer 620 are arranged between the semiconductor die 110 and the die carrier 120. Diffusion soldering may be performed, for example, in an oven. Diffusion soldering may include heating the solder material 610 to a temperature above its melting point, for example, to a temperature of 230° C. or higher, for a certain duration (e.g., 1 min or longer, 5 min or longer, or 10 min or longer) so that the solder material 610 reacts with the first, third, and fourth metals having higher melting points to form the IMCs 140, 150 and the precipitate 160. After soldering, the semiconductor device 100 may be cooled to room temperature. Diffusion soldering may also be performed so that no unreacted solder material 610 remains after soldering (in other words, all solder material is part of the IMC after soldering).

[0070] During diffusion soldering, the solder material 610 may react with the material of the metallization layer 130 and the material of the die carrier 120 (or the material of a plating layer on top of the die carrier 120 ) to produce the first IMC 140 and the second IMC 150 , respectively.

[0071] In addition, the control Fig. 6E The solder material 610 may react with the material of the metal layer 620 to generate a precipitate 160 of a third IMC disposed between the first IMC 140 and the second IMC 150 .

[0072] Figure 7 is a flow chart of a method 700 for manufacturing a semiconductor device. The method 700 may be used, for example, to manufacture the semiconductor devices 100 and 300.

[0073] Method 700 includes, at 701, providing a semiconductor die having a metallization layer including a first metal having a relatively high melting point; at 702, providing a die carrier including a second metal having a relatively high melting point; at 703, providing a solder material including a third metal having a relatively low melting point; at 704, providing a layer of a fourth metal having a relatively high melting point on the semiconductor die or the die carrier; and at 705, soldering the semiconductor die to the die carrier, thereby producing: a first intermetallic compound disposed between the semiconductor die and the die carrier and including the first metal and the third metal; a second intermetallic compound disposed between the first intermetallic compound and the die carrier and including the second metal and the third metal; and a precipitate of a third intermetallic compound disposed between the first intermetallic compound and the second intermetallic compound and including the third metal and the fourth metal.

[0074] According to an example of method 700, the first metal and the second metal are different metals, and according to another example, the first metal and the second metal are the same metal. The first metal can be, for example, Ni, NiV or NiP, the second metal can be Cu, the third metal can be Sn or SnAgCu, and the fourth metal can be Ag.

[0075] According to an example of method 700 , the first IMC may include Ni 3 Sn 4 , the second IMC may include Cu 3 Sn and the precipitate may include Ag 3 Sn.

[0076] Example

[0077] Hereinafter, a semiconductor device and a method for manufacturing the semiconductor device will be further explained using specific examples.

[0078] Example 1 is a semiconductor device comprising: a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a higher melting point; a die carrier comprising a second metal having a higher melting point; a first intermetallic compound arranged between the semiconductor die and the die carrier and comprising the first metal and a third metal having a lower melting point; a second intermetallic compound arranged between the first intermetallic compound and the die carrier and comprising the second metal and the third metal; and a precipitate of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and comprising the third metal and a fourth metal having a higher melting point.

[0079] Example 2 is the semiconductor device according to Example 1, wherein the first metal and the second metal are different metals.

[0080] Example 3 is the semiconductor device according to Example 1, wherein the first metal and the second metal are the same metal.

[0081] Example 4 is a semiconductor device according to one of the aforementioned examples, wherein the first metal and the second metal are each one of Cu, Ni, NiV, NiP, Ag, Al, Au, Pd, or Pt.

[0082] Example 5 is a semiconductor device according to one of the preceding examples, wherein the third metal is one of Sn, SnAgCu, In, Zn, or Ga.

[0083] Example 6 is a semiconductor device according to one of the preceding examples, wherein the fourth metal is one of Ag, Au, Pt, or Pd.

[0084] Example 7 is a semiconductor device according to one of the preceding examples, wherein a diameter of each precipitate is less than 60% of a thickness of the first intermetallic compound and the second intermetallic compound combined.

[0085] Example 8 is a semiconductor device according to one of the preceding examples, wherein the precipitate is arranged substantially in a plane.

[0086] Example 9 is a semiconductor device according to one of the preceding examples, wherein the precipitate is disposed substantially midway between the semiconductor die and the die carrier.

[0087] Example 10 is a semiconductor device according to one of the preceding examples, wherein the precipitate is a discontinuous inclusion within the first intermetallic compound and the second intermetallic compound.

[0088] Example 11 is a method for manufacturing a semiconductor device, the method comprising: providing a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a higher melting point; providing a die carrier comprising a second metal having a higher melting point; providing a solder material comprising a third metal having a lower melting point; providing a layer of a fourth metal having a higher melting point on the semiconductor die or the die carrier; soldering the semiconductor die to the die carrier, and thereby producing: a first intermetallic compound, which is arranged between the semiconductor die and the die carrier and includes the first metal and the third metal; a second intermetallic compound, which is arranged between the first intermetallic compound and the die carrier and includes the second metal and the third metal; and a precipitate of a third intermetallic compound, which is arranged between the first intermetallic compound and the second intermetallic compound and includes the third metal and the fourth metal.

[0089] Example 12 is the method of Example 11, wherein the first metal and the second metal are different metals.

[0090] Example 13 is the method of Example 11, wherein the first metal and the second metal are the same metal.

[0091] Example 14 is the method according to one of Examples 11 to 13, wherein the third metal is Sn, and wherein the fourth metal is Ag.

[0092] Example 15 is a method according to Example 14, wherein the precipitate includes Ag3Sn.

[0093] Example 16 is the method according to one of Examples 11 to 15, wherein the welding is performed so that no unreacted third metal remains after the welding.

[0094] Example 17 is the method of one of Examples 11 to 16, wherein a thickness of the combined first intermetallic phase and the second intermetallic phase is less than 10 μm.

[0095] Example 18 is the method of one of Examples 11 to 17, wherein providing the solder material includes depositing the solder material on the semiconductor die or on the die carrier.

[0096] Example 19 is the method of one of Examples 11 to 17, wherein the solder material is provided as a preform.

[0097] Although the present disclosure has been shown and described with respect to one or more embodiments, changes and / or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular, with respect to the various functions performed by the above-described components or structures (assemblies, devices, circuits, systems, etc.), even if not structurally equivalent to the disclosed structures that perform the functions in the exemplary embodiments of the present disclosure illustrated herein, the terms used to describe such components (including references to "devices") are intended to correspond to (e.g., functionally equivalent to) any component or structure that performs the designated functions of the described components, unless otherwise noted.

Claims

1. A semiconductor device, comprising: a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a relatively high melting point; a die carrier comprising a second metal having a higher melting point; a first intermetallic compound disposed between the semiconductor die and the die carrier and comprising the first metal and a third metal having a lower melting point; a second intermetallic compound disposed between the first intermetallic compound and the die carrier and comprising the second metal and the third metal; as well as a precipitate of a third intermetallic compound disposed between the first intermetallic compound and the second intermetallic compound and comprising the third metal and a fourth metal having a higher melting point, wherein the first metal and the second metal are different metals, and The surface of the first intermetallic compound contacts the surface of the second intermetallic compound, thereby forming an interface.

2. The semiconductor device according to claim 1, wherein The first metal and the second metal are each one of Cu, Ni, NiV, NiP, Ag, Al, Au, Pd or Pt.

3. The semiconductor device according to claim 1, wherein The third metal is one of Sn, SnAgCu, In, Zn or Ga.

4. The semiconductor device according to claim 1, wherein: The fourth metal is one of Ag, Au, Pt or Pd.

5. The semiconductor device according to claim 1, wherein: The diameter of each precipitate is less than 60% of the thickness of the first intermetallic compound and the second intermetallic compound combined.

6. The semiconductor device according to claim 1, wherein: The precipitates are arranged in a plane.

7. The semiconductor device according to claim 1, wherein: The deposit is disposed intermediately between the semiconductor die and the die carrier.

8. The semiconductor device according to claim 1, wherein: The precipitates are discontinuous inclusions within the first intermetallic compound and the second intermetallic compound.

9. The semiconductor device according to claim 1, wherein: The first metal is Ni, the second metal is Cu, the third metal is Sn, the fourth metal is Ag, the first intermetallic compound includes Ni3Sn4, the second intermetallic compound includes Cu3Sn, and the precipitate includes Ag3Sn.

10. The semiconductor device according to one of claims 1 to 4 and 9, wherein: The precipitates are spaced an average of half a diameter between two adjacent precipitates.

11. The semiconductor device according to one of claims 1 to 4 and 9, wherein: The deposits are spaced an average of one diameter between two adjacent deposits.

12. The semiconductor device according to one of claims 1 to 4 and 9, wherein: The interval between two adjacent precipitates is between 0.5 μm and 1.0 μm.

13. The semiconductor device according to one of claims 1 to 4 and 9, wherein: The precipitate of the third intermetallic compound is disposed at the interface.

14. The semiconductor device according to one of claims 1 to 4 and 9, wherein: The metallization layer is a backside metallization layer of the semiconductor die.

15. A method for manufacturing a semiconductor device, the method comprising: providing a semiconductor die having a metallization layer, the metallization layer comprising a first metal having a relatively high melting point; providing a die carrier including a second metal, the second metal having a higher melting point; providing a solder material including a third metal, the third metal having a lower melting point; providing a layer of a fourth metal having a higher melting point on the semiconductor die or on the die carrier; Soldering the semiconductor die to the die carrier, thereby producing: a first intermetallic compound disposed between the semiconductor die and the die carrier and comprising the first metal and the third metal; a second intermetallic compound disposed between the first intermetallic compound and the die carrier and comprising the second metal and the third metal; as well as a precipitate of a third intermetallic compound disposed between the first intermetallic compound and the second intermetallic compound and comprising the third metal and the fourth metal, wherein the first metal and the second metal are different metals, and The surface of the first intermetallic compound contacts the surface of the second intermetallic compound, thereby forming an interface.

16. The method according to claim 15, wherein: The third metal is Sn, and wherein the fourth metal is Ag.

17. The method according to claim 16, wherein: The precipitate includes Ag3Sn.

18. The method according to claim 15, wherein: The first metal is Ni, the second metal is Cu, the third metal is Sn, the fourth metal is Ag, the first intermetallic compound includes Ni3Sn4, the second intermetallic compound includes Cu3Sn, and the precipitate includes Ag3Sn.

19. The method according to any one of claims 15 to 18, wherein: The precipitates are spaced an average of half a diameter between two adjacent precipitates.

20. The method according to any one of claims 15 to 18, wherein: The deposits are spaced an average of one diameter between two adjacent deposits.

21. The method according to any one of claims 15 to 18, wherein: The interval between two adjacent precipitates is between 0.5 μm and 1.0 μm.

22. The method according to any one of claims 15 to 18, wherein: The precipitate of the third intermetallic compound is disposed at the interface.

23. The method according to any one of claims 15 to 18, wherein: The metallization layer is a backside metallization layer of the semiconductor die.

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