Convergent ion beam apparatus and control method thereof

Abstract

The present invention provides a focused ion beam apparatus and a control method for a focused ion beam apparatus, which can control a beam to a desired orbit. The focused ion beam apparatus includes: an ion source that generates ions; a first electrostatic lens that accelerates and converges the ions to form an ion beam; a beam booster electrode that further accelerates the ion beam; one or more electrodes that are disposed within the beam booster electrode and electrostatically deflect the ion beam; a second electrostatic lens that is disposed between the one or more electrodes and a specimen stage and converges the ion beam to which a voltage is applied; and a processing unit that acquires measurement conditions and sets at least one of the respective voltages applied to the one or more electrodes and the voltage applied to the electrostatic lens based on the acquired measurement conditions.

Description

Technical Field

[0001] The present invention relates to a focused ion beam apparatus and a method for controlling the focused ion beam apparatus. Background Art

[0002] In processing of a specimen shape typified by specimen preparation of a transmission electron microscope (TEM) using a focused ion beam (FIB) apparatus, there is a requirement to minimize damage to the specimen caused by irradiation with an ion beam. Therefore, the acceleration energy of the ion beam is reduced to 1 kV or less to process the specimen.

[0003] Specifically, regarding processing of a specimen shape, there is known a technique of performing rough processing at 30 kV and finish processing at 10 kV (for example, see Patent Document 1). In addition, there is known a technique of effectively removing a damaged layer by reducing the energy of the ion beam for finish processing and optimizing the incident angle at which the ion beam is incident on the specimen corresponding to the specimen shape (for example, see Patent Document 2). In addition, there is known a technique of reducing the acceleration voltage to reduce the damaged layer (for example, see Patent Document 3).

[0004] However, when the acceleration voltage of the focused ion beam is reduced, an increase in the amount of beam blur caused by chromatic aberration and broadening of the beam profile caused by Coulomb interaction become significant. That is, when used with the acceleration voltage reduced, chromatic aberration increases and the ion beam cannot be sufficiently focused. Therefore, a fine ion probe cannot be obtained. To solve this problem, there is known a technique in which the action of the acceleration lens and the action of the deceleration lens are selectively applied according to the acceleration voltage so that chromatic aberration hardly changes (for example, see Patent Document 4).

[0005] In addition, there is known a beam booster technique of increasing the potential energy of the intermediate part of the optical system and lowering it by an objective lens (for example, see Patent Document 5 and Non-Patent Document 1).

[0006] Prior Art Documents

[0007] Patent Documents

[0008] Patent Document 1: Japanese Patent No. 3333731

[0009] Patent Document 2: Japanese Patent No. 5142240

[0010] Patent Document 3: Japanese Patent No. 5537050

[0011] Patent Document 4: Japanese Unexamined Patent Application Publication No. 5-35540

[0012] Patent Document 5: Japanese Patent Application Publication No. 2007-103108

[0013] Patent Document 6: Japanese Patent Application Laid-Open No. 59-66043

[0014] Patent Document 7: Japanese Patent Application Laid-Open No. 63-231852

[0015] Patent Document 8: Japanese Patent No. 3544438

[0016] Patent Document 9: Japanese Patent No. 5969229

[0017] Non-patent literature

[0018] Non-patent document 1: Michael Rauscher and Erich Plies, "Low Energy focused ionbeam system design", Journal of Vacuum Science & Technology A, American Vacuum Society, 2006, 24(4), p.1055-1066 Summary of the invention

[0019] Problem that the invention aims to solve

[0020] A focused ion beam is sometimes used at a relatively high acceleration voltage (eg, 30 kV) during processing and etching, and is sometimes used at a lower acceleration voltage (eg, 1 kV to 5 kV) during finish processing in order to remove a damaged layer caused by the processing.

[0021] When the acceleration voltage is changed, there is known a technique for controlling the voltage of the optical system in conjunction with the changed acceleration voltage (for example, see Patent Documents 6 and 7).

[0022] When the beam intensifier potential is applied while the acceleration voltage is reduced, the ion beam travels in the beam intensifier tube with energy exceeding the acceleration voltage.

[0023] The following electrodes are arranged in the beam intensifier tube. The electrodes are basically electrostatic deflectors, and are called differently depending on their functions. For example, an electrode that electrostatically deflects the beam and deflects it from the optical axis so that it does not irradiate the sample is called a blanking electrode. An electrode that electrostatically deflects the beam and adjusts it to be consistent with the optical axis of the lens is called an alignment electrode. An electrode that adjusts the roundness of the cross-sectional shape of the ion beam by electrostatically deflecting the beam and making the cross-sectional shape of the beam circular is called an astigmatism correction electrode. An electrode that electrostatically deflects the beam and scans it on the sample surface is called a scanning electrode.

[0024] In the structure where these electrodes are disposed in the beam intensifier tube, the following problems occur when the acceleration voltage or the beam intensifier voltage is changed. In addition, when the beam intensifier tube is not cylindrical, the same problems occur when the power supplies for the blanking electrode, the astigmatism correction electrode, and the alignment electrode float to the beam intensifier potential.

[0025] Figure 1 It is a diagram for explaining the blanking voltage control when the acceleration voltage is changed.

[0026] Figure 1 (a) of shows the case where the blanking voltage Vblk1 is applied to the blanking electrode BE. In this case, the beam of the acceleration voltage Vacc1 is electrostatically deflected and irradiates the desired location on the blanking hole BA.

[0027] Figure 1 (b) of shows the case where the acceleration voltage is changed from Vacc1 to Vacc2 (where Vacc2 < Vacc1). The blanking voltage is not changed and remains Vblk1. In this case, the deflection amount is too large, and the beam of the acceleration voltage Vacc2 does not irradiate the desired part of the blanking hole BA. When the beam does not irradiate the desired part or location of the blanking hole BA, the part irradiated by the beam is ion beam etched, which may cause a malfunction of the device.

[0028] Figure 1 (c) of shows the case where the acceleration voltage is changed from Vacc1 to Vacc3 (where Vacc3 = k × Vacc1, and k is a proportionality constant). When the blanking voltage is changed to k × Vblk1, similar to Figure 1 (a) of, the beam irradiates the desired position on the blanking hole BA. The same content is shown in Patent Document 6.

[0029] Figure 2 It is a diagram for explaining the case where the beam intensifier voltage is applied.

[0030] Figure 2 (a) of shows the case where the blanking voltage Vblk1 is applied to the blanking electrode BE. Here, the applied voltage Vb1 of the beam intensifier tube BT is zero. By applying the blanking voltage Vblk1 to the blanking electrode BE, the beam of the acceleration voltage Vacc1 is electrostatically deflected and irradiates the desired location on the blanking hole BA.

[0031] Figure 2Part (b) shows the case where the voltage of the beam intensifier power supply is set to Vb2 (which is a negative voltage for accelerating the ion beam). The acceleration voltage remains unchanged at Vacc1, the blanking voltage also remains unchanged, and Vblk1 is applied. In this case, inside the beam intensifier tube, the energy of the ion beam becomes (Vacc1 + Vb2) eV. Therefore, the blanking voltage required to make the beam irradiate the desired part of the blanking hole is insufficient. As a result, the deflection amount is too small, and the desired part of the blanking hole BA cannot be irradiated. That is, parts other than the desired ones are ion beam etched, which may cause device failures. In addition, in the state where the beam intensifier voltage is applied, even in the case as shown in Figure 1 part (c) where the acceleration voltage is Vacc3 (where Vacc3 = k × Vacc1, k is a proportionality constant) and the blanking voltage is changed to k × Vblk1, the beam still cannot irradiate the desired part of the blanking hole. Since inside the beam intensifier tube, the energy of the ion beam becomes (Vacc3 + Vb2) eV, the blanking voltage required to make the beam irradiate the desired part of the blanking hole is insufficient. Therefore, even using the method described in Patent Document 6, this problem cannot be solved.

[0032] The magnitude of astigmatism varies according to the machining roundness of the optical components and the mechanical assembly accuracy. Regarding the voltage range applied to the astigmatism correction electrode to correct this astigmatism, the same problem as the blanking voltage occurs. For example, in the state where the beam intensifier voltage is zero, when the voltage range applied to the astigmatism correction electrode is ±10 V at an acceleration voltage of 30 kV, the voltage range applied to the astigmatism correction electrode can be ±3.3 V at an acceleration voltage of 10 kV. However, in the state where the beam intensifier voltage is applied, even when the voltage range applied to the astigmatism correction electrode is ±3.3 V at an acceleration voltage of 10 kV, the voltage is insufficient, and astigmatism may not be corrected.

[0033] The offset of the optical axis of the condenser lens and the objective lens is caused by the mechanical assembly accuracy of the lens electrodes and the optical components between them. Regarding the voltage range applied to the alignment electrode to correct this offset of the optical axis, the same problem as the blanking voltage occurs. For example, in the state where the beam intensifier voltage is zero, when the voltage range applied to the alignment electrode is ±10 V at an acceleration voltage of 30 kV, the voltage range applied to the alignment electrode can be ±3.3 V at an acceleration voltage of 10 kV. However, in the state where the beam intensifier voltage is applied, even when the voltage range applied to the alignment electrode is ±3.3 V at an acceleration voltage of 10 kV, the voltage is insufficient, and the optical axis may not be corrected.

[0034] The focusing lens and the objective lens also have aspects that depend on the type of lens. However, in the case of an electrostatic type, as with the blanking electrode, even if the lens strength is determined only based on the acceleration voltage, a desired lens strength may not be obtained.

[0035] Even if the method described in Patent Document 8 is applied, the problem cannot be solved. Patent Document 8 describes the following: the voltage applied to the objective lens is pre-stored in a computer, and multiple processes are performed. However, the beam intensifier is not described. Therefore, it is impossible to draw analogies on how the problem occurs and how to set multiple scanning voltages. Even if the voltage of the blanking electrode, the alignment electrode, the astigmatism correction electrode, the focusing lens, and the objective lens is controlled independently of the voltage applied to the beam intensifier electrode, the problem cannot be solved.

[0036] Even if the method described in Patent Document 9 is applied, this problem cannot be solved. The control object in Patent Document 9 is the convergence voltage of the convergence lens, and the purpose in Patent Document 9 is to adjust the beam current by setting the convergence voltage. Patent Document 9 does not describe a beam enhancer or a plurality of scanning electrodes. Therefore, it is impossible to infer how the problem occurs and how to set a plurality of scanning voltages.

[0037] The present invention is completed in view of the above points, and its purpose is to provide a converged ion beam device and a control method for the converged ion beam device, in which one or more electrodes are arranged in a beam intensifier tube or float to the beam intensifier potential, and the beam can be controlled to a desired orbit by changing the acceleration voltage and the beam intensifier voltage.

[0038] Means used to solve problems

[0039] In order to solve the above problems and achieve relevant objectives, the present invention adopts the following solutions.

[0040] (1) A converged ion beam device according to one embodiment of the present invention comprises: an ion source that generates ions; a first electrostatic lens that accelerates the ions and converges them to form an ion beam; a beam intensifier electrode that further accelerates the ion beam; one or more electrodes that are built into the beam intensifier electrode and electrostatically deflect the ion beam; a second electrostatic lens that is arranged between one or more of the electrodes and a sample stage and converges the ion beam to which a voltage is applied; and a processing unit that obtains measurement conditions and sets at least one of the voltages applied to the one or more electrodes and the voltage applied to the electrostatic lens based on the obtained measurement conditions.

[0041] (2) Based on the focused ion beam device described in (1) above, the processing unit obtains, from the applied voltage information formed by associating the measurement conditions with each piece of information for determining the voltage applied to one or more of the electrodes and the information for determining the voltage applied to the electrostatic lens, the information for determining at least one voltage among each piece of information for determining one or more of the voltages and the information for determining the voltage applied to the electrostatic lens that conforms to the obtained measurement conditions, and based on the information for determining the at least one voltage obtained, sets at least one voltage among the voltage applied to one or more of the electrodes and the voltage applied to the electrostatic lens.

[0042] (3) Based on the focused ion beam device described in (1) above or (2) above, one or more of the electrodes include: an alignment electrode, which is provided within the beam intensifier electrode and corrects the deviation of the optical axis of the ion beam; an astigmatism correction electrode, which is provided within the beam intensifier electrode and corrects the roundness of the cross-sectional shape of the ion beam; a blanking electrode, which is provided within the beam intensifier electrode and deflects the ion beam; and a first scanning electrode and a second scanning electrode, which are provided within the beam intensifier electrode and scan the ion beam on the specimen.

[0043] (4) Based on the focused ion beam device described in any one of (1) to (3) above, the measurement conditions include information for determining the acceleration voltage and information for determining the beam intensifier voltage.

[0044] (5) Based on the focused ion beam device described in any one of (1) to (4) above, the processing unit calculates the sum of the acceleration voltage and the beam intensifier voltage based on the information for determining the acceleration voltage and the information for determining the beam intensifier voltage, and based on the calculated sum, sets at least one voltage among the voltages applied to one or more of the electrodes.

[0045] (6) A control method according to one aspect of the present invention is a control method for a focused ion beam device, the focused ion beam device including: an ion source that generates ions; a first electrostatic lens that accelerates and focuses the ions to form an ion beam; a beam intensifier electrode that further accelerates the ion beam; one or more electrodes that are provided within the beam intensifier electrode and electrostatically deflect the ion beam; and a second electrostatic lens that is disposed between one or more of the electrodes and the specimen stage and focuses the ion beam to which a voltage has been applied, wherein the control method for the focused ion beam device includes the steps of: obtaining measurement conditions; and based on the obtained measurement conditions, setting at least one voltage among the voltages applied to one or more of the electrodes and the voltage applied to the electrostatic lens.

[0046] Effects of the Invention

[0047] According to the present invention, a beam can be controlled to a desired trajectory. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a diagram for explaining blanking voltage control when the acceleration voltage is changed.

[0049] Figure 2 It is a diagram for explaining the case where a beam intensifier voltage is applied.

[0050] Figure 3 It is a diagram showing an example of the structure of a charged particle beam device according to the first embodiment.

[0051] Figure 4 It is a diagram showing an example of the structure of a control unit in the charged particle beam device according to the present embodiment.

[0052] Figure 5 It is a diagram showing an example of scanning voltage information.

[0053] Figure 6 It is a diagram showing an example of a first electrode, a second electrode, an incident side electrode, an intermediate electrode, and an exit side electrode in the charged particle beam device according to the present embodiment.

[0054] Figure 7 It shows an example of the trajectory of an ion beam.

[0055] Figure 8 It is a flowchart showing an example of the operation of the charged particle beam device according to the present embodiment.

[0056] Figure 9 It is a diagram showing an example of the structure of a control unit in the charged particle beam device according to Modification 1 of the first embodiment.

[0057] Figure 10 It is a diagram showing an example of scanning voltage information.

[0058] Figure 11 It is a diagram showing an example of the relationship between the acceleration voltage value Eacc and the beam intensifier voltage value Eb in the charged particle beam device according to Modification 1 of the first embodiment.

[0059] Figure 12 It shows an example of the trajectory of an ion beam.

[0060] Figure 13 It is a diagram showing an example of the trajectory of an ion beam.

[0061] Figure 14 It is a flowchart showing an example of the operation of the charged particle beam device according to Modification 1 of the first embodiment.

[0062] Figure 15 It is a diagram showing an example of the structure of a control unit in a charged particle beam apparatus according to Modification 2 of the present embodiment.

[0063] Figure 16 It is a flowchart showing an example of the operation of a charged particle beam apparatus according to Modification 2 of the first embodiment.

[0064] Figure 17 It is a diagram showing an example of the structure of a control unit in a composite charged particle beam apparatus according to the second embodiment.

[0065] Figure 18 It is a partial view of a charged particle beam apparatus according to the third embodiment.

[0066] Figure 19 It is a diagram showing an example of the structure of a control unit in a charged particle beam apparatus according to the third embodiment.

[0067] Figure 20 It is a flowchart showing an example of the operation of a charged particle beam apparatus according to the third embodiment.

[0068] Figure 21 It is a partial view of a charged particle beam apparatus according to Modification 1 of the third embodiment.

[0069] Figure 22 It is a diagram showing an example of the structure of a control unit in a charged particle beam apparatus according to Modification 1 of the third embodiment.

[0070] Figure 23 It is a flowchart showing an example of the operation of a charged particle beam apparatus according to a modification of the third embodiment.

[0071] Figure 24 It is a partial view of a charged particle beam apparatus according to Modification 2 of the third embodiment.

[0072] Figure 25 It is a diagram showing an example of the structure of a control unit in a charged particle beam apparatus according to Modification 2 of the third embodiment.

[0073] Figure 26 It is a flowchart showing an example of the operation of a charged particle beam apparatus according to Modification 2 of the third embodiment.

[0074] Figure 27 It is a partial view of a charged particle beam apparatus according to Modification 3 of the third embodiment.

[0075] Figure 28 It is a diagram showing an example of the structure of a control unit in a charged particle beam apparatus according to Modification 3 of the third embodiment.

[0076] Figure 29It is a flowchart showing an example of the operation of the charged particle beam device according to Modification 2 of the third embodiment.

[0077] Figure 30 It is a diagram showing an example of the structure of the control unit in the charged particle beam device according to Modification 4 of the third embodiment.

[0078] Figure 31 It is a flowchart showing an example of the operation of the charged particle beam device according to Modification 4 of the third embodiment.

[0079] Figure 32 It is a diagram showing an example of the condenser lens voltage information.

[0080] Figure 33 It is a diagram showing an example of the structure of the control unit in the charged particle beam device according to Modification 5 of the third embodiment.

[0081] Figure 34 It is a flowchart showing an example of the operation of the charged particle beam device according to Modification 5 of the third embodiment.

[0082] Figure 35 It is a diagram showing an example of the objective lens voltage information.

[0083] Reference Numeral Explanation

[0084] D... Composite charged particle beam device, D1... Charged particle beam device, D2... Scanning electron microscope, 1... Ion source control unit, 10... Accelerating power supply, 3... Condenser lens central electrode, 4b... Beam intensifier, 5... Objective lens central electrode, 9, 9a, 9b, 9c, 9d, 9e, 9f, 9g, 9h, 9i... Control unit, 90, 90a, 90b, 90c, 90d, 90e, 90f, 90g, 90h, 90i... Processing unit, 91, 91a, 91b, 91c, 91d, 91e, 91f, 91g, 91h, 91i... Storage unit, 92, 92a, 92b, 92c, 92d, 92e, 92f, 92g, 92h, 92i... Scanning voltage information, 93, 93a, 93b, 93c, 93d, 93e, 93f, 93g, 93h, 93i... Beam intensifier voltage information, 41... Alignment electrode, 42... Astigmatism correction electrode, 43... Blanking electrode, 44... First scanning electrode, 45... Second scanning electrode, 60... MCU. Detailed Embodiment

[0085] Next, the charged particle beam device and the control method of the charged particle beam device according to the present embodiment will be described with reference to the drawings. The embodiments described below are merely examples, and the embodiments applying the present invention are not limited to the following embodiments. The focused ion beam device is an example of the charged particle beam device.

[0086] In addition, in all the figures used to illustrate the embodiments, the same reference numerals are used for parts having the same functions, and repeated descriptions are omitted.

[0087] In addition, "based on XX" as used in this application means "at least based on XX", and also includes cases where it is based on other elements in addition to XX. In addition, "based on XX" is not limited to the case of directly using XX, and also includes cases where it is based on the content obtained after performing operations and processing on XX. "XX" is an arbitrary element (for example, arbitrary information).

[0088] (First Embodiment)

[0089] Figure 3 It is a diagram showing an example of the structure of the charged particle beam device of the first embodiment.

[0090] The charged particle beam device D1 includes a charged particle beam device main body Da, a beam booster control unit 6, a beam booster power supply unit 7, a lens power supply unit 8, a control unit 9, a tank control module 12, a host PB unit 13, a vacuum control unit 14, a stage control unit 15, a scanning board 16, and a personal computer (PC: Personal Computer) 17.

[0091] The focused ion beam device main body Da includes an ion source control unit 1, an ion emitter E, an extraction electrode 2, a condenser lens central electrode 3, a beam booster tube 4a, and an objective lens central electrode 5. After accelerating the ion beam B to the acceleration voltage Vacc, the focused ion beam device main body Da converges it through a condenser lens formed by an electric field generated between the condenser lens central electrode 3, the extraction electrode 2, and the beam booster tube 4a, and an objective lens formed by an electric field generated between the objective lens central electrode 5, the beam booster tube, and the ground electrode, and irradiates the sample SP1 on the sample stage. The sample SP1 is configured in a grounded state.

[0092] The ion source control unit 1 controls the emission of the charged particle beam. An example of the charged particle beam is the ion beam B. Hereinafter, the case where the ion beam B is applied as the charged particle beam will be continued to be described. The ion source control unit 1 includes an extraction power supply 11 and an acceleration power supply 10.

[0093] The ion emitter E is a charged particle source that generates charged particles. The ion emitter E has a metal with a sharp front end, and the front end of the metal is set as, for example, a liquid metal ion source wetted by liquid metal gallium. In addition, instead of liquid metal, helium, neon, oxygen, nitrogen, hydrogen, etc. can be supplied to the ion emitter E to make it a gas field ionization type ion source. In addition, as the charged particle supply unit, the ion emitter E can also use an inductively coupled plasma ion source, an electron cyclotron resonance plasma ion source, or a Penning ion gauge (PIG) plasma ion source.

[0094] The extraction power supply 11 extracts gallium ions as charged particles from the front end of the ion emitter E by applying an extraction voltage Vext between the front end of the ion emitter E and the extraction electrode 2.

[0095] The acceleration power supply 10 forms an ion beam B by applying an acceleration voltage Vacc to the charged particles generated by the ion emitter E, and accelerates the formed ion beam B. An example of the acceleration voltage Vacc is up to 30 kV. However, in order to minimize the damage caused by irradiating the ion beam to the specimen, the acceleration voltage can also be set according to each processing step of the focused ion beam and used. For example, in rough machining, the acceleration voltage can be set to 30 kV, and in finish machining, the acceleration voltage can be set to 1 kV or 0.5 kV, which is a value lower than that in rough machining.

[0096] The condenser lens including the condenser lens central electrode 3 condenses the ion beam B accelerated by applying the acceleration voltage Vacc by the acceleration power supply 10. Here, the condenser lens central electrode 3 uses the electric field formed by applying a condenser lens voltage Vcl to the condenser lens central electrode 3 through the condenser lens power supply 80 of the lens power supply unit 8 to condense the passing ion beam B.

[0097] The beam intensifier tube 4a applies a beam intensifier voltage Vb to the ion beam B condensed by the condenser lens. The beam intensifier tube 4a is provided between the condenser lens central electrode 3 and the objective lens central electrode 5. The beam intensifier tube 4a suppresses the increase in the amount of beam blur caused by chromatic aberration and the broadening of the beam profile caused by Coulomb interaction by increasing the potential energy of the ion beam B that has passed through the condenser lens. The beam intensifier tube 4a includes a beam intensifier 4b. The beam intensifier 4b includes an alignment electrode 41, an astigmatism correction electrode 42, a blanking electrode 43, a first scanning electrode 44, and a second scanning electrode 45.

[0098] The alignment electrode 41 is arranged between the condenser lens central electrode 3 and the astigmatism correction electrode 42. The alignment electrode 41 is connected to the alignment power supply 61 of the beam intensifier control unit 6. The alignment electrode 41 corrects the deviation of the optical axis of the passing ion beam B by applying a voltage to the ion beam B.

[0099] The astigmatism correction electrode 42 is arranged between the alignment electrode 41 and the blanking electrode 43. The astigmatism correction electrode 42 is connected to the astigmatism correction power supply 62 of the beam intensifier control unit 6. The astigmatism correction electrode 42 corrects the distortion of the cross-sectional shape of the passing ion beam B by applying a voltage to the ion beam B, thereby making it a perfect circle.

[0100] The blanking electrode 43 is disposed between the astigmatism correction electrode 42 and the first scanning electrode 44. The blanking electrode 43 is connected to the blanking power supply 63 of the beam intensifier control unit 6. The blanking electrode 43 deflects the ion beam B by applying a voltage thereto so that the passed ion beam B does not irradiate the specimen SP1.

[0101] The first scanning electrode 44 is disposed between the blanking electrode 43 and the second scanning electrode 45. The blanking electrode 43 is connected to the deflection power supply 64 of the beam intensifier control unit 6. The first scanning electrode 44 scans the passed ion beam B on the specimen SP1 by applying a voltage thereto.

[0102] The second scanning electrode 45 is disposed between the first scanning electrode 44 and the objective lens central electrode 5. The second scanning electrode 45 is connected to the deflection power supply 64 of the beam intensifier control unit 6. The second scanning electrode 45 scans the passed ion beam B on the specimen SP1 by applying a voltage thereto.

[0103] The objective lens central electrode 5 is disposed between the second scanning electrode 45 and the specimen stage. The objective lens converges the ion beam B to which the beam intensifier voltage Vb is applied by the beam intensifier 4b and irradiates the specimen SP1. Here, the objective lens forms an electric field by applying the objective lens voltage Vol to the objective lens central electrode 5 by the objective lens power supply 81 included in the lens power supply unit 8, and converges the passed ion beam B. In addition, the objective lens decelerates the potential difference ion beam B of the beam intensifier.

[0104] The beam intensifier control unit 6 controls the beam intensifier 4b. The beam intensifier control unit 6 includes an MCU 60, an alignment power supply 61, an astigmatism correction power supply 62, a blanking power supply 63, a deflection power supply 64, and a high-voltage floating unit 66.

[0105] The memory control unit (MCU: Memory Control Unit) 60 controls the alignment power supply 61, the astigmatism correction power supply 62, and the blanking power supply 63 based on the beam intensifier voltage Vb set by the beam intensifier power supply unit 7. The MCU 60 controls the deflection power supply 64 based on the value of the first voltage VdefU, which is the first voltage value EdefU of the voltage applied to the first scanning electrode 44 set by the control unit 9, and the value of the second voltage VdefL, which is the second voltage value EdefL of the voltage applied to the second scanning electrode 45.

[0106] The alignment power supply 61 applies a voltage to the alignment electrode 41. The astigmatism correction power supply 62 applies a voltage to the astigmatism correction electrode 42. The blanking power supply 63 applies a voltage to the blanking electrode 43. The deflection power supply 64 applies a voltage to the first scanning electrode 44 and the second scanning electrode 45.

[0107] The high-voltage floating unit 66 supplies a scanning signal to the deflection power supply 64 under the control of the scanning board 16. This scanning signal is a signal for adjusting the position where the ion beam B irradiates the specimen SP1. The high-voltage floating unit 66 and the scanning board 16 together constitute the scanning system SS.

[0108] The beam intensifier power supply unit 7 sets the beam intensifier voltage Vb based on the control of the control unit 9.

[0109] The lens power supply unit 8 includes a condenser lens power supply 80 and an objective lens power supply 81. The condenser lens power supply 80 applies a voltage to the condenser lens. The objective lens power supply 81 applies a voltage to the objective lens central electrode 5.

[0110] The control unit 9 controls the beam intensifier power supply unit 7 based on the acceleration voltage value Eacc of the acceleration voltage Vacc supplied from the PC 17. Here, the acceleration voltage value Eacc is supplied from the PC 17 to the control unit 9 via the host PB 13. The control unit 9 will be described in detail later.

[0111] The PC 17 accepts various operations from the user of the charged particle beam device D1. The PC 17 supplies an operation signal to the ion source control unit 1 via the tank control module 12. The PC 17 supplies an operation signal to the beam intensifier control unit 6 and the control unit 9 via the host PB 13. Here, in the operation signal, for example, information indicating the value of the acceleration voltage Vacc, that is, the acceleration voltage value Eacc, is included. In addition, the PC 17 controls the vacuum control unit 14 that controls the vacuum state of the charged particle beam device D1 and the stage control unit 15 that controls the stage on which the specimen SP1 is placed.

[0112] In the present embodiment, as an example, the case where the beam intensifier voltage Vb set for the beam intensifier power supply unit 7 is zero will be continued to be described. The alignment electrode 41, the astigmatism correction electrode 42, and the blanking electrode 43 included in the beam intensifier 4b can also be omitted. In addition, the alignment power supply 61, the astigmatism correction power supply 62, and the blanking power supply 63 included in the beam intensifier control unit 6 can also be omitted. The beam intensifier power supply unit 7 can also be omitted.

[0113] Next, the structure of the control unit 9 will be described in detail.

[0114] Figure 4 It is a diagram showing an example of the structure of the control unit in the charged particle beam device of the present embodiment. The control unit 9 includes a processing unit 90 and a storage unit 91. The storage unit 91 stores scanning voltage information 92.

[0115] The processing unit 90 derives the value of the first voltage VdefU, i.e., the first voltage value EdefU, and the value of the second voltage VdefL, i.e., the second voltage value EdefL, based on the acceleration voltage value Eacc supplied from the PC 17, the information indicating the operation mode, and the scan voltage information 92 read from the storage unit 91. The processing unit 90 outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU 60.

[0116] The scan voltage information 92 stores, in association with each value of the acceleration voltage Vacc, i.e., the acceleration voltage value Eacc, the operation mode and the information for determining the value of the first voltage VdefU, i.e., the first voltage value EdefU, and the value of the second voltage VdefL, i.e., the second voltage value EdefL.

[0117] Figure 5 FIG. is an example showing the scan voltage information. In Figure 5 In the example shown, the scan voltage information 92 associates the operation mode, the ratio of the first voltage value EdefU to the second voltage value EdefL, and the first voltage value EdefU for acceleration voltage values Eacc of 5 kV, 10 kV, and 30 kV, respectively. Here, the operation mode includes an acceleration mode and a deceleration mode. The acceleration mode is an operation mode in which the ion beam B is accelerated before entering the lens in the objective lens to converge it. The deceleration mode is an operation mode in which the ion beam B is decelerated before entering the lens in the objective lens to converge it. In both cases, the velocity at the exit is the same as that at the entrance.

[0118] As Figure 5 shown, in the scan voltage information 92, the acceleration voltage value "30 kV", the operation mode "acceleration mode", the ratio of the first voltage value to the second voltage value "1:0.953", and the first voltage value "210 V" are associated, and the acceleration voltage value "30 kV", the operation mode "deceleration mode", the ratio of the first voltage value to the second voltage value "1:0.942", and the first voltage value "228 V" are associated. Here, as an example, acceleration voltage values Eacc of 5 kV, 10 kV, and 30 kV are shown, but this is not limited to this example, and the acceleration voltage value Eacc can also be other than 5 kV, 10 kV, and 30 kV. In addition, the first voltage value is a value for giving a specific scan width on the specimen, for example, the value when scanning at 0.5 mm.

[0119] Here, the process of passing the ion beam B through the principal plane of the objective lens on the optical axis will be described.

[0120] Figure 6 FIG. is an example showing the first scan electrode, the second scan electrode, the incident-side electrode, the intermediate electrode, and the exit-side electrode constituting the objective lens in the charged particle beam device of the present embodiment. In Figure 6The figure shows a beam intensifier tube 4a, a first scanning electrode 44, a second scanning electrode 45, an incident-side electrode 5c, an intermediate electrode 5b, and an exit-side electrode 5a. In Figure 6 the short side direction of the beam intensifier tube 4a is defined as the X-axis, and the long side direction of the beam intensifier tube 4a is defined as the Z-axis. Further, on the Z-axis, the direction in which the ion beam B exits from the incident direction is defined as positive.

[0121] Next, the trajectory of the ion beam B will be described.

[0122] Figure 7 Shown Figure 6 is an example of the trajectory of the ion beam in the structure shown. In Figure 7 the X-axis and the Z-axis are as Figure 6 shown. In Figure 7 is shown a case where the operation mode is the acceleration mode (acceleration lens system), the acceleration voltage is 5 kV, and there is no beam intensifier 4b (the beam intensifier voltage value is 0 [V]).

[0123] In Figure 7 not shown is that a deflection electric field based on the first scanning electrode is formed in the region where the value of the Z-axis is -120 mm to -110 mm, a deflection electric field based on the second scanning electrode is formed in the region where the value of the Z-axis is -90 mm to -70 mm, and a converging electric field based on the objective lens is formed in the region where the value of the Z-axis is -40 mm to -5 mm. Shown are the trajectory of the ion beam B from the incidence on the first scanning electrode until reaching the specimen surface and the result of applying the regression line to the trajectory of the ion beam B.

[0124] According to Figure 7 the left figure, it can be seen that the trajectory of the ion beam B intersects with the result of applying the regression line to the ion beam B on the image plane. That is, it can be seen that the ion beam B passes through the principal plane.

[0125] Figure 7 The right figure of Figure 7 shows a partial enlarged view where the trajectory of the ion beam B and the result of applying the regression line to the trajectory of the ion beam B in the left figure of Figure 7 become Z = 0 [mm]. According to

[0126] the right figure, at the specimen surface Z = 0 [mm], it becomes X = 0.5 mm. The ion beam B passes through the converging electric field of the objective lens in the region where the Z-axis coordinate is -40 mm to -5 mm, and its trajectory is regarded as a straight line. Figure 7 Therefore, the ion beam B reaches the specimen surface with almost no effect from the objective lens. Since the beam on the optical axis of the lens travels straight through the principal plane, it can be considered that

[0127] At this time, the ratio of the first voltage value EdefH to the second voltage value EdefL (the upper and lower level ratio of DEF) (the first voltage value EdefH: the second voltage value EdefL) is 1:0.953.

[0128] When the first voltage value EdefH = 35 [V] and the second voltage value EdefL = -33.36 [V], the swing in the X-axis direction of the orbit of the ion beam B becomes 0.5 [mm]. It should be noted here that the polarities of the first voltage value and the second voltage value need to be reversed.

[0129] In addition, regarding the Y-axis direction perpendicular to the paper surface, the same first scanning electrode and second scanning electrode as those for the X-axis can also be used, and scanning can be performed by applying the first voltage value and the second voltage value respectively, which is not shown in the figure. Scanning of the XY plane can be performed by raster scanning. When the polarities of the first voltage value and the second voltage value are reversed, scanning in the opposite direction of each axis is achieved.

[0130] Scanning of +0.5 mm is performed on the specimen with the first voltage value EdefH = 35 [V] and the second voltage value EdefL = -33.36 [V].

[0131] Scanning of -0.5 mm is performed on the specimen with the first voltage value EdefH = -35 [V] and the second voltage value EdefL = 33.36 [V]. In the above example, scanning in a region of ±0.5 mm, that is, 1 mm, is achieved.

[0132] For the case where the operation mode is the deceleration mode, the acceleration voltage value Eacc is 5 kV, and there is no beam booster 4b (the beam booster voltage value is 0 [V]), the orbit of the ion beam is also derived. It can be seen that when the ratio of the first voltage value EdefH to the second voltage value EdefL (the upper and lower level ratio of DEF) (the first voltage value EdefH: the second voltage value EdefL) is 1:0.942, it coincides with the regression line on the specimen surface. In order to make the swing in the X-axis direction of the orbit of the ion beam B become 0.5 [mm] (FOV = 1 [mm], the field of view of the scanned image: 1 [mm]), the first voltage value EdefH = 38 [V].

[0133] Based on the above, the Figure 5 shown scanning voltage information 92 is derived.

[0134] Next, regarding the operation of the charged particle beam device, the process of setting the first voltage value EdefU and the second voltage value EdefL based on the acceleration voltage and the operation mode is described.

[0135] Figure 8 It is a flowchart showing an example of the operation of the charged particle beam device of the present embodiment.

[0136] (Step S1)

[0137] In the charged particle beam apparatus D1, the processing unit 90 acquires the acceleration voltage value Eacc and the information indicating the operation mode from the PC17.

[0138] (Step S2)

[0139] In the charged particle beam apparatus D1, the processing unit 90 reads out the scanning voltage information 92 from the storage unit 91. The processing unit 90 acquires the ratio of the first voltage value to the second voltage value associated with the combination of the acquired acceleration voltage value Eacc and the information indicating the operation mode, and the first voltage value from the read scanning voltage information 92.

[0140] (Step S3)

[0141] In the charged particle beam apparatus D1, the processing unit 90 derives the second voltage value based on the ratio of the acquired first voltage value to the second voltage value and the first voltage value.

[0142] (Step S4)

[0143] In the charged particle beam apparatus D1, the processing unit 90 sets the first voltage value and the derived second voltage value to the MCU60. It should be noted here that it is necessary to reverse the polarities of the first voltage value and the second voltage value.

[0144] In addition, the first voltage value is a value that gives a specific scanning width on the specimen, for example, the value when performing a scan of 0.5 mm. Also, when reversing the polarities of the first voltage value and the second voltage value, the scan is performed in the opposite direction.

[0145] After implementing (Step S4), it is possible to change to an arbitrary scanning width. For example, when performing a scan of 0.1 mm, it is sufficient to reduce the first voltage value and the second voltage value to 1 / 5. Since the first voltage value and the second voltage value are changed based on the ratio of the first voltage value to the second voltage value, an accurate scanned image without distortion can be obtained.

[0146] In the above embodiment, the case where the acceleration voltage value, the information indicating the operation mode, the information indicating the ratio of the first voltage value to the second voltage value, and the first voltage value are stored in association in the scanning voltage information 92 has been described, but it is not limited to this example. For example, the acceleration voltage value, the information indicating the operation mode, the information indicating the ratio of the first voltage value to the second voltage value, and the second voltage value may be stored in association in the scanning voltage information 92, or the acceleration voltage value, the information indicating the operation mode, the first voltage value, and the second voltage value may be stored in association in the scanning voltage information 92.

[0147] In the above-described embodiment, the case where the control unit 9 includes the storage unit 91 has been described, but it is not limited to this example. For example, the storage unit 91 may be provided outside the charged particle beam apparatus D1. When the storage unit 91 is provided outside the charged particle beam apparatus D1, for example, the storage unit 91 may be configured as an external storage device or a cloud server.

[0148] In addition, instead of storing the scan voltage information 92, the storage unit 91 may store arithmetic expressions for deriving the first scan voltage VdefU and the second scan voltage VdefL based on the acceleration voltage value Eacc and the information indicating the operation mode. In this case, the control unit 9 may also derive the first scan voltage VdefU and the second scan voltage VdefL based on these arithmetic expressions for setting.

[0149] In the above-described embodiment, a part of the information included in the scan voltage information 92 may be omitted. For example, since the acceleration voltage is 5 [kV] and the operation mode is the deceleration mode is hardly used, it may be omitted. Conversely, information may be added to the scan voltage information 92.

[0150] The charged particle beam apparatus D1 according to the present embodiment includes: a charged particle source (an ion emitter E in the embodiment) that generates charged particles; a plurality of scan electrodes that generate an electric field for deflecting the charged particles, the charged particles being charged particles emitted by applying an acceleration voltage to the charged particle source and an extraction voltage to an extraction electrode for extracting the charged particles; an electrostatic lens (an objective lens in the embodiment) that is disposed between the plurality of scan electrodes and the sample stage and converges the charged particle beam scanned by the scan voltage; and a processing unit that acquires measurement conditions (here, the acceleration voltage value Eacc and the operation mode) and sets a plurality of scan voltages respectively based on the acquired measurement conditions.

[0151] With such a configuration, even when the measurement conditions are changed and the position of the principal plane of the electrostatic lens is changed, a plurality of scan voltages can be set respectively based on the changed measurement conditions (here, the operation mode). Therefore, the trajectory of the ion beam B can be changed. Therefore, the lens action on the scanned beam can be reduced.

[0152] (Modification Example 1 of the First Embodiment)

[0153] The structure of the charged particle beam apparatus of Modification Example 1 of the First Embodiment can be applied Figure 3 . The charged particle beam apparatus of Modification Example 1 of the First Embodiment is different from the charged particle beam apparatus D1 of the First Embodiment in that a beam booster voltage Vb is applied to the ion beam B. That is, in reference Figure 3In the structure of the described charged particle beam device, the alignment electrode 41, the astigmatism correction electrode 42, and the blanking electrode 43 included in the beam intensifier 4b are not omitted. In addition, the alignment power supply 61, the astigmatism correction power supply 62, and the blanking power supply 63 included in the beam intensifier control unit 6 are not omitted. The beam intensifier power supply unit 7 is not omitted. However, the charged particle beam device according to the first modification of the first embodiment does not change the operation mode. The charged particle beam device according to the first modification of the first embodiment includes a control unit 9a instead of the control unit 9.

[0154] The structure of the control unit 9a will be described in detail.

[0155] Figure 9 FIG. is an example of the structure of the control unit in the charged particle beam device according to the first modification of the present embodiment. The control unit 9a includes a processing unit 90a and a storage unit 91a. The scanning voltage information 92a and the beam intensifier voltage information 93a are stored in the storage unit 91a.

[0156] Based on the acceleration voltage value Eacc supplied from the PC 17 and the beam intensifier voltage information 93a read from the storage unit 91a, the processing unit 90a derives the value of the beam intensifier voltage Vb, that is, the beam intensifier voltage value Eb. The processing unit 90a supplies the calculated beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0157] Based on the acceleration voltage value Eacc supplied from the PC 17 and the derived beam intensifier voltage value Eb, the processing unit 90a derives the value of the first voltage VdefU, that is, the first voltage value EdefU, and the value of the second voltage VdefL, that is, the second voltage value EdefL. The processing unit 90a outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU 60.

[0158] The scanning voltage information 92a is information in the form of a table that associates the acceleration voltage value Eacc, the beam intensifier voltage value Eb, the information indicating the ratio of the first voltage value EdefU to the second voltage value EdefL, and the first voltage value EdefU.

[0159] Figure 10 FIG. is an example of the scanning voltage information. In Figure 10 In the example shown, in addition to the acceleration voltage value Eacc [kV], the beam intensifier voltage value Eb [kV], the information indicating the ratio of the first voltage value EdefU to the second voltage value EdefL, and the first voltage value EdefU [V], the scanning voltage information 92a also associates the information indicating the operation mode with the information indicating the position of the principal plane. Here, the position of the principal plane is the position of the principal plane on the Z axis. As Figure 10As shown, in the scanning voltage information 92a, the acceleration voltage value "30 kV", the operation mode "deceleration mode", the beam intensifier voltage value "0 V", the position of the principal plane "-24.6 mm", the ratio of the first voltage to the second voltage "1:0.942", and the first voltage "228 V" are associated. In addition, in the scanning voltage information 92a, the acceleration voltage value "1 kV", the operation mode "acceleration mode", the beam intensifier voltage value "-5 V", the position of the principal plane "-29.0 mm", the ratio of the first voltage to the second voltage "1:0.986", and the first voltage "35.5 V" are associated. In addition, in the scanning voltage information 92a, the acceleration voltage value "5 kV", the operation mode "acceleration mode", the beam intensifier voltage value "-5 V", the position of the principal plane "-23.7 mm", the ratio of the first voltage to the second voltage "1:0.937", and the first voltage "80 V" are associated. In Figure 10 it, the position of the principal plane in the information included in the scanning voltage information 92a may also be omitted.

[0160] The beam intensifier voltage information 93a is set for each acceleration voltage value Eacc. Assuming a case where a composite charged particle beam device is composed of a convergent ion beam and an electron beam, in order to focus the beam at the intersection (superposition point) of the two beams (convergent ion beam and electron beam), the beam intensifier voltage value is restricted for each acceleration voltage. Figure 11 An example is shown. Figure 11 The relationship between the acceleration voltage value [kV] and the beam intensifier voltage value [kV] is shown. As the acceleration voltage becomes lower, the beam intensifier voltage value also becomes smaller. However, there is no such restriction in the case of a single beam device.

[0161] When the acceleration voltage value Eacc of the acceleration voltage Vacc is switched, the processing unit 90a changes the beam intensifier voltage value Eb to a voltage value equal to or lower than the beam intensifier voltage set value TEb shown in the beam intensifier voltage information 93a. The upper limit of the beam intensifier voltage Vb is stored in the beam intensifier voltage information 93a. The processing unit 90a may also store the acceleration voltage value Eacc and the set beam intensifier voltage value Eb in association with each other in the beam intensifier voltage information 93a after setting the beam intensifier voltage value Eb. The processing unit 90a may also derive the beam intensifier voltage value Eb based on the beam intensifier voltage value Eb stored in association with the acceleration voltage value Eacc when setting the beam intensifier voltage Vb next time.

[0162] Next, the orbit of the ion beam B will be described.

[0163] Figure 12 is a diagram showing an example of the orbit of the ion beam. In Figure 12 it, the X-axis and the Z-axis are as Figure 6As shown. In Figure 12 it is shown that the acceleration voltage value Eacc is 5 kV and the beam intensifier voltage value Eb is 5 kV. Since the beam intensifier voltage value Eb is 5 kV, the acceleration energy of the ion beam in the beam intensifier tube is 10 keV. The scanning voltage is set to be twice that when the beam intensifier voltage is 0 [V]. Here, as an example, the first scanning voltage value EdefU = 70 [V], and the second scanning voltage value EdefL = 66.71. In this case, the first scanning voltage value EdefU: the second scanning voltage value EdefL = 1:0.953. This ratio gives the orbit that can be regarded as the ion beam B passing through the principal plane of the objective lens when the beam intensifier voltage is 0 [V].

[0164] In Figure 12 it is shown the orbit of the ion beam B from the incidence on the first scanning electrode to reaching the sample surface and the result of applying the regression line to the orbit of the ion beam B.

[0165] According to the left figure of 12, the orbit of the ion beam B does not coincide with the result of applying the regression line to the orbit of the ion beam B on the image plane. This is considered that the ion beam B is affected by the lens action in the electric field of the objective lens, and thus deviates from the straight orbit. The beam passing through the principal plane on the optical axis of the lens travels straight, but in this example, since it deviates from the straight orbit, it is considered that the ion beam B does not pass through the principal plane of the objective lens. This indicates that when the beam intensifier voltage Vb changes, the position of the principal plane shifts.

[0166] Figure 12 The right figure of Figure 12 shows a partial enlarged view where the orbit of the ion beam B and the result of applying the regression line to the orbit of the ion beam B in the left figure of Figure 12 become Z = 0 [mm]. According to the right figure of Figure 12 , the orbit of the ion beam B becomes Z = 0 [mm] at the position where the sample surface is Z = 0 [mm] and smaller than X = 0.45 mm. That is, the swing amplitude of the orbit of the ion beam B in the X-axis direction is smaller than 0.5 [mm]. This is presumably due to the backlash caused by the lens action. That is, in this case, it is shown that the scanning width is reduced by 10% due to the lens action, and even if the size of the scanned image is measured, its value is inaccurate.

[0167] In the modification 1 of the present embodiment, in order to reduce the influence of the lens action caused by the position shift of the principal plane due to the change of the beam intensifier voltage Vb, the scanning voltage value Edef is adjusted.

[0168] Figure 13 is a diagram showing an example of the orbit of the ion beam. In Figure 13 the X-axis and Z-axis are as Figure 6 shown. In Figure 13The case where the operation mode is the acceleration mode, the acceleration voltage value Eacc is 5 kV, and the beam intensifier voltage value Eb is 5 [kV] is shown. Here, as an example, let the first scan voltage value EdefU = 80 [V], and the second scan voltage value EdefL = 74.94. In this case, the first scan voltage value EdefU: the second scan voltage value EdefL = 1:0.937.

[0169] In Figure 13 , before and after the adjustment of the scan voltage value Edef, the trajectory of the ion beam B from the incidence on the first scan electrode to reaching the sample surface and the result of applying the regression line to the trajectory of the ion beam B are shown.

[0170] According to Figure 13 's left figure, it can be seen that the trajectory of the ion beam B and the result of applying the regression line to the trajectory of the ion beam B intersect on the image plane. That is, the trajectory of the ion beam B can be approximated by a straight line and is considered not to participate in the lens action. Therefore, it can be regarded as passing through the principal plane.

[0171] Figure 13 's right figure shows a partial enlarged view where the result of applying the regression line to the trajectory of the ion beam B in Figure 13 's left figure becomes Z = 0 [mm]. According to Figure 13 's right figure, it can be seen that after the adjustment of the scan voltage value Edef, Z = 0 [mm] at X = 0.5 mm.

[0172] Based on the above, the scan voltage information 92a shown in Figure 10 is derived.

[0173] Next, regarding the operation of the charged particle beam device, the process of setting the beam intensifier voltage value Eb, the first voltage value EdefU, and the second voltage value EdefL will be described.

[0174] Figure 14 is a flowchart showing an example of the operation of the charged particle beam device according to the first modification of the first embodiment.

[0175] (Step S11)

[0176] In the charged particle beam device D1, the processing unit 90a acquires the acceleration voltage value Eacc from the PC17.

[0177] (Step S12)

[0178] In the charged particle beam device D1, the processing unit 90a reads out the beam intensifier voltage information 93a from the storage unit 91a. The processing unit 90a acquires the beam intensifier voltage value Eb associated with the acquired acceleration voltage value Eacc from the read beam intensifier voltage information 93a.

[0179] (Step S13)

[0180] In the charged particle beam apparatus D1, the processing unit 90a reads out the scanning voltage information 92a from the storage unit 91a. The processing unit 90a obtains the ratio of the first voltage value to the second voltage value associated with the combination of the acceleration voltage value Eacc and the obtained beam booster voltage value Eb, and the first voltage value from the read scanning voltage information 92a.

[0181] (Step S14)

[0182] In the charged particle beam apparatus D1, the processing unit 90a derives the second voltage value based on the obtained ratio of the first voltage value to the second voltage value and the first voltage value.

[0183] (Step S15)

[0184] In the charged particle beam apparatus D1, the processing unit 90a sets the first voltage value and the derived second voltage value to the MCU60. It should be noted here that it is necessary to reverse the polarities of the first voltage value and the second voltage value.

[0185] In addition, the first voltage value is a value that gives a specific scanning width on the specimen, for example, the value when performing a scan of 0.5 mm. Also, when reversing the polarities of the first voltage value and the second voltage value, the scan is performed in the opposite direction.

[0186] After setting the first voltage value and the second voltage value to the MCU60 in (Step S15), by changing the first voltage value and the second voltage value based on the ratio of the first voltage value to the second voltage value, it is possible to change to an arbitrary scanning range. Since the first voltage value and the second voltage value are changed based on the ratio of the first voltage value to the second voltage value, an accurate scanned image without distortion can be obtained.

[0187] The charged particle beam apparatus D1 according to Modification 1 of the present embodiment includes: a charged particle source (an ion emitter E in Modification 1 of the embodiment) that generates charged particles; a plurality of scanning electrodes that generate an electric field for deflecting the charged particles, the charged particles being emitted by applying an acceleration voltage to the charged particle source and an extraction voltage to the extraction electrode for extracting the charged particles; an electrostatic lens (an objective lens in Modification 1 of the embodiment) that is disposed between the plurality of scanning electrodes and the specimen stage and converges the charged particle beam scanned by the scanning voltage; and a processing unit that obtains measurement conditions (here, the acceleration voltage value Eacc and the beam booster voltage value Eb) and sets a plurality of scanning voltages respectively based on the obtained measurement conditions and the information for determining the position of the principal plane of the electrostatic lens.

[0188] With such a configuration, even when the measurement conditions (here, the beam intensifier voltage value Eb) are changed and the position of the principal plane of the electrostatic lens is changed, multiple scanning voltages can be set separately based on the changed measurement conditions. Therefore, the trajectory of the ion beam B can be changed. As a result, the lens action on the scanned beam can be reduced.

[0189] (Modification Example 2 of the First Embodiment)

[0190] The structure of the charged particle beam device of Modification Example 2 of the First Embodiment can be applied Figure 3 . The charged particle beam device of Modification Example 2 of the First Embodiment is different from the charged particle beam device D of the First Embodiment in that a beam intensifier voltage Vb is applied to the ion beam B. That is, in the structure of the charged particle beam device described with reference to Figure 3 , the alignment electrode 41, the astigmatism correction electrode 42, and the blanking electrode 43 included in the beam intensifier 4b are not omitted. In addition, the alignment power supply 61, the astigmatism correction power supply 62, and the blanking power supply 63 included in the beam intensifier control unit 6 are not omitted. The beam intensifier power supply unit 7 is not omitted. The charged particle beam device of Modification Example 2 of the First Embodiment includes a control unit 9b instead of the control unit 9.

[0191] The structure of the control unit 9b will be described in detail.

[0192] Figure 15 FIG. is an example of a diagram showing the structure of the control unit 9b in the charged particle beam device of Modification Example 2 of the present embodiment. The control unit 9b includes a processing unit 90b and a storage unit 91b. Scanning voltage information 92b and beam intensifier voltage information 93b are stored in the storage unit 91b.

[0193] Based on the acceleration voltage value Eacc supplied from the PC17 and the beam intensifier voltage information 93b read from the storage unit 91a, the processing unit 90b derives the value of the beam intensifier voltage Vb, that is, the beam intensifier voltage value Eb. The processing unit 90b supplies the calculated beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0194] Based on the acceleration voltage value Eacc supplied from the PC17, the information indicating the operation mode, and the derived beam intensifier voltage value Eb, the processing unit 90b derives the value of the first voltage VdefU, that is, the first voltage value EdefU, and the value of the second voltage defL, that is, the second voltage value EdefL. The processing unit 90b outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU60.

[0195] The scanning voltage information 92b is information in the form of a table that associates the acceleration voltage value Eacc, information indicating the operation mode, the beam intensifier voltage value Eb, information indicating the ratio of the first voltage value EdefU to the second voltage value EdefL, and the first voltage value EdefU.

[0196] As an example of the scanning voltage information 92b, the scanning voltage information 92a can be applied, and as an example of the beam intensifier voltage information 93b, the beam intensifier voltage information 93a can be applied.

[0197] Next, the process of setting the beam intensifier voltage value Eb, the first voltage value EdefU, and the second voltage value EdefL will be described for the operation of the charged particle beam device.

[0198] Figure 16 It is a flowchart showing an example of the operation of the charged particle beam device according to the second modification of the first embodiment.

[0199] (Step S21)

[0200] In the charged particle beam device D1, the processing unit 90b acquires the acceleration voltage value Eacc and the information indicating the operation mode from the PC17.

[0201] (Step S22)

[0202] In the charged particle beam device D1, the processing unit 90b reads out the beam intensifier voltage information 93b from the storage unit 91b. The processing unit 90b acquires the beam intensifier voltage value Eb associated with the acquired acceleration voltage value Eacc from the read beam intensifier voltage information 93b.

[0203] (Step S23)

[0204] In the charged particle beam device D1, the processing unit 90b reads out the scanning voltage information 92b from the storage unit 91b. The processing unit 90b acquires the ratio of the first voltage value to the second voltage value and the first voltage value associated with the combination of the acceleration voltage value Eacc, the information indicating the operation mode, and the acquired beam intensifier voltage value Eb from the read scanning voltage information 92b.

[0205] (Step S24)

[0206] In the charged particle beam device D1, the processing unit 90b derives the second voltage value based on the acquired ratio of the first voltage value to the second voltage value and the first voltage value.

[0207] (Step S25)

[0208] In the charged particle beam device D1, the processing unit 90b sets the first voltage value and the derived second voltage value to the MCU 60. Here, it should be noted that it is necessary to reverse the polarities of the first voltage value and the second voltage value.

[0209] In addition, the first voltage value is a value that gives a specific scanning width to the specimen, for example, the value during scanning of 0.5 mm. Further, when the polarities of the first voltage value and the second voltage value are reversed, scanning is performed in the opposite direction.

[0210] After setting the first voltage value and the second voltage value to the MCU 60 in (step S25), based on the ratio between the first voltage value and the second voltage value, the first voltage value and the second voltage value are changed, whereby it is possible to change to an arbitrary scanning range. Since the first voltage value and the second voltage value are changed based on the ratio between the first voltage value and the second voltage value, an accurate scanned image without distortion can be obtained.

[0211] The charged particle beam device D1 according to the modification 2 of the present embodiment includes: a charged particle source (an ion emitter E in the modification 2 of the embodiment), which generates charged particles; a plurality of scanning electrodes, which generate an electric field for deflecting the charged particles, the charged particles being the charged particles emitted by applying an acceleration voltage to the charged particle source and an extraction voltage to the extraction electrode for extracting the charged particles; an electrostatic lens (an objective lens in the modification 2 of the embodiment), which is disposed between the plurality of scanning electrodes and the specimen stage and converges the charged particle beam scanned by the scanning voltage; and a processing unit, which acquires measurement conditions (here, an acceleration voltage value Eacc, a beam intensifier voltage value Eb, and information indicating an operation mode), and sets a plurality of scanning voltages respectively based on the acquired measurement conditions and information for determining the position of the principal plane of the electrostatic lens.

[0212] With such a configuration, even when the measurement conditions (here, the acceleration voltage value Eacc, the beam intensifier voltage value Eb, and the information indicating the operation mode) are changed and the position of the principal plane of the electrostatic lens is changed, it is possible to set a plurality of scanning voltages respectively based on the changed measurement conditions, and thus, it is possible to change the orbit of the ion beam B. Therefore, the lens action on the scanned beam can be reduced.

[0213] (Second Embodiment)

[0214] The composite charged particle beam device D of the second embodiment is described with reference to Figure 3On the basis of the described charged particle beam apparatus D1, a scanning electron microscope D2 (not shown) such as an electron beam column is provided. However, the alignment electrode 41, the astigmatism correction electrode 42, and the blanking electrode 43 included in the beam intensifier 4b are not omitted. In addition, the alignment power supply 61, the astigmatism correction power supply 62, and the blanking power supply 63 included in the beam intensifier control unit 6 are not omitted. The beam intensifier power supply unit 7 is not omitted.

[0215] The scanning electron microscope D2 irradiates an electron beam onto the specimen SP1 and detects secondary electrons and reflected electrons emitted from the specimen SP1, thereby observing the surface and cross-section of the specimen SP1.

[0216] The composite charged particle beam apparatus D of the second embodiment irradiates an electron beam and a focused ion beam onto the same point on the specimen. In order to irradiate the electron beam and the focused ion beam onto the same point on the specimen, it is required that the focus of the electron beam and the focus of the focused ion beam be aligned with the same point (irradiation point) on the specimen. The same point on the specimen irradiated with the electron beam and the focused ion beam is called the coincidence point (CP).

[0217] The composite charged particle beam apparatus of the second embodiment includes a control unit 9c instead of the control unit 9.

[0218] The structure of the control unit 9c will be described in detail.

[0219] Figure 17 FIG. shows an example of the structure of the control unit 9c in the composite charged particle beam apparatus of the second embodiment. The control unit 9c includes a processing unit 90c and a storage unit 91c. The scanning voltage information 92c and the beam intensifier voltage information 93c are stored in the storage unit 91c.

[0220] Based on the acceleration voltage value Eacc supplied from the PC17 and the beam intensifier voltage information 93c read from the storage unit 91a, the processing unit 90c derives the value of the beam intensifier voltage Vb, that is, the beam intensifier voltage value Eb. The processing unit 90c supplies the calculated beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0221] Based on the acceleration voltage value Eacc supplied from the PC17 and the derived beam intensifier voltage value Eb, the processing unit 90c derives the value of the first voltage VdefU, that is, the first voltage value EdefU, and the value of the second voltage VdefL, that is, the second voltage value EdefL. The processing unit 90c outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU60.

[0222] The scanning voltage information 92c is information in the form of a table that associates the acceleration voltage value Eacc, the beam intensifier voltage value Eb, the information indicating the ratio of the first voltage value EdefU to the second voltage value EdefL, and the first voltage value EdefU.

[0223] An example of the scanning voltage information 92c can be applied with reference to Figure 10 the scanning voltage information 92a described.

[0224] The beam intensifier voltage information 93c is information in the form of a table that associates the acceleration voltage value Eacc with the beam intensifier voltage setting value TEb calculated in advance according to the desired focal length. Specifically, the beam intensifier voltage setting value TEb is the voltage value within the range where the electron beam and the convergent ion beam can be focused on the same point CP on the specimen when the acceleration voltage value Eacc is applied. The fine adjustment of the focus is performed by adjusting the applied voltage of the objective lens as in the past. In the charged particle beam apparatus D, based on the beam intensifier voltage information 93c, the beam intensifier voltage setting value TEb is set, whereby the focus of the convergent ion beam is made to coincide with the irradiation point of the electron beam.

[0225] Figure 11 The range of the beam intensifier voltage Vb that can be focused is shown, so the description is omitted here.

[0226] The operation of the charged particle beam apparatus according to the second embodiment can be applied Figure 14 .

[0227] In the above embodiment, the case where the control unit 9c includes the storage unit 91c has been described, but it is not limited to this example. For example, the storage unit 91c may also be provided outside the charged particle beam apparatus D. When the storage unit 91c is provided outside the charged particle beam apparatus D, for example, the storage unit 91c may be provided as an external storage device or a cloud server.

[0228] In addition, instead of storing the scanning voltage information 92c and the beam intensifier voltage information 93c in the storage unit 91c, an arithmetic expression for deriving the beam intensifier voltage value Eb from the acceleration voltage value Eacc may be stored in the storage unit 91c. In addition, an arithmetic expression for deriving the first scanning voltage VdefU and the second scanning voltage VdefL from the acceleration voltage value Eacc and the beam intensifier voltage Eb may be stored in the storage unit 91c. In this case, the control unit 9c may also derive the beam intensifier voltage value Eb, the first scanning voltage VdefU, and the second scanning voltage VdefL based on these arithmetic expressions for setting.

[0229] The charged particle beam device D according to the second embodiment can derive the beam booster voltage value Eb based on the acceleration voltage value Eacc, the focal length of the charged particle beam converged by the objective lens, and the focal length of the electron beam irradiated by the electron beam irradiation unit that irradiates the electron beam. Therefore, the charged particle beam can be focused on the CP. That is, the value of the beam booster voltage Vb (beam booster voltage value Eb) of the beam booster tube 4a that can focus the converged ion beam on the CP can be set according to the acceleration voltage applied to the charged particle beam (ion beam B).

[0230] (Third Embodiment)

[0231] The charged particle beam device D1 of the third embodiment can apply the charged particle beam device of the modified example 1 of the first embodiment described above. That is, in the structure of the charged particle beam device described with reference to Figure 3 the alignment electrode 41, the astigmatism correction electrode 42, and the blanking electrode 43 included in the beam booster 4b are not omitted. In addition, the alignment power supply 61, the astigmatism correction power supply 62, and the blanking power supply 63 included in the beam booster control unit 6 are not omitted. The beam booster power supply unit 7 is not omitted.

[0232] Figure 18 is a partial view of the charged particle beam device of the third embodiment. In Figure 18 it shows the beam booster tube 4a, the blanking electrode 43, the blanking power supply 63, and the beam booster power supply unit 7 in the structure of the charged particle beam device described with reference to Figure 3 In addition, the blanking hole 4c is shown in Figure 18 The blanking hole 4c guides the charged particle beam deflected by applying the blanking voltage Vblk to the blanking electrode 43.

[0233] The charged particle beam device D1 of the third embodiment derives the value of the blanking voltage Vblk (blanking voltage value Eblk) applied to the blanking electrode 43 based on the combination of the value of the acceleration voltage Vacc, that is, the acceleration voltage value Eacc, and the value of the beam booster voltage Vb, that is, the beam booster voltage value Eb. The charged particle beam device of the third embodiment includes a control unit 9d instead of the control unit 9a.

[0234] The structure of the control unit 9d will be described in detail.

[0235] Figure 19 is a diagram showing an example of the structure of the control unit 9d in the charged particle beam device of the third embodiment. The control unit 9d includes a processing unit 90d and a storage unit 91d. The scanning voltage information 92d and the beam booster voltage information 93d are stored in the storage unit 91d.

[0236] The processing unit 90d derives the value of the beam intensifier voltage Vb, i.e., the beam intensifier voltage value Eb, based on the acceleration voltage value Eacc supplied from the PC 17 and the beam intensifier voltage information 93d read out from the storage unit 91a. The processing unit 90 supplies the calculated beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0237] The processing unit 90d derives the value of the first voltage VdefU, i.e., the first voltage EdefU, and the value of the second voltage VdefL, i.e., the second voltage value EdefL, based on the acceleration voltage value Eacc supplied from the PC 17 and the derived beam intensifier voltage value Eb. The processing unit 90d outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU 60.

[0238] The processing unit 90d derives the value of the blanking voltage Vblk based on the value of the acceleration voltage value Eacc supplied from the PC 17 and the derived beam intensifier voltage Vb value. For example, the processing unit 90d derives the value of the blanking voltage Vblk based on Equation (1). In Equation (1), k1 is a proportionality constant.

[0239] Vblk = k1 × (Vacc + Vb) (1)

[0240] The processing unit 90d outputs the derived blanking voltage Bblk value, i.e., the blanking voltage value Eblk, to the MCU 60.

[0241] The scan voltage information 92d can apply the scan voltage information 92a. The beam intensifier voltage information 93d can apply the beam intensifier voltage information 93a.

[0242] Next, regarding the operation of the charged particle beam device, the following processing is described: deriving the first voltage value EdefU, the second voltage value EdefL, and the blanking voltage value Eblk, and setting the derived first voltage value EdefU, second voltage value EdefL, and blanking voltage value Eblk.

[0243] Figure 20 It is a flowchart showing an example of the operation of the charged particle beam device according to the third embodiment.

[0244] Steps S31 to S34 can apply the steps S11 to S14 described with reference to Figure 14 the description.

[0245] (Step S35)

[0246] In the charged particle beam device D1, the processing unit 90d derives the blanking voltage value Eblk based on the acquired acceleration voltage value Eacc and beam intensifier voltage value Eb.

[0247] (Step S36)

[0248] In the charged particle beam device D1, the processing unit 90d sets the first voltage value, the derived second voltage value, and the blanking voltage value in the MCU 60.

[0249] In the third embodiment, the case where the processing unit 90d derives the blanking voltage value Vb from the values of the acceleration voltage Vacc and the beam booster voltage Vb by Equation (1) has been described, but it is not limited to this example. For example, information in the form of a table associating the acceleration voltage value Eacc, the beam booster voltage value Eb, and the blanking voltage value Eb, i.e., blanking voltage value information, may be stored in the storage unit 91d. In this case, the processing unit 90d obtains the blanking voltage value Eblk associated with the combination of the acceleration voltage value Eacc and the beam booster voltage value Eb from the blanking voltage value information, and outputs the obtained blanking voltage value Eblk to the MCU 60.

[0250] According to the charged particle beam device D1 of the third embodiment, it includes: an ion source (an ion emitter E in the third embodiment) that generates ions; a first electrostatic lens (a condenser lens in the third embodiment) that accelerates and converges the ions to form an ion beam; a beam booster electrode (a beam booster power supply unit 7 in the third embodiment) that further accelerates the ion beam; one or more electrodes (alignment electrodes 41, astigmatism correction electrodes 42, blanking electrodes 43 in the third embodiment) that are provided inside the beam booster electrode and electrostatically deflect the ion beam; a second electrostatic lens (an objective lens in the third embodiment) that is disposed between the one or more electrodes and the specimen stage and converges the ion beam to which a voltage is applied; and a processing unit that obtains measurement conditions and sets at least one of the voltages applied to the one or more electrodes and the voltage applied to the electrostatic lens based on the obtained measurement conditions. Based on the combination of the acceleration voltage value Eacc and the beam booster voltage value Eb, the voltage applied to the blanking electrode, i.e., the blanking voltage Vblk, is derived and changed to the derived blanking voltage value Eblk. By configuring in this way, voltage control reflecting the acceleration energy of the ion beam incident on the beam booster tube 4a can be performed, and thus, a desired beam orbit can be controlled.

[0251] (Modification Example 1 of the Third Embodiment)

[0252] The charged particle beam device D of Modification Example 1 of the third embodiment can apply the charged particle beam device of the above third embodiment.

[0253] Figure 21 is a partial view of the charged particle beam device of Modification Example 1 of the third embodiment. In Figure 21 In, when referring to Figure 3In the structure of the described charged particle beam device, the beam intensifier tube 4a, the first scanning electrode 44, the second scanning electrode 45, the deflection power supply 64, and the beam intensifier power supply unit 7 are shown.

[0254] The charged particle beam device D of Modification 1 of the third embodiment changes the first voltage value EdefU and the second voltage value EdefL applied to the first scanning electrode 44 and the second scanning electrode 45, respectively, based on the combination of the acceleration voltage value Eacc and the beam intensifier voltage Eb. The charged particle beam device of Modification 1 of the third embodiment includes a control unit 9e instead of the control unit 9d.

[0255] The structure of the control unit 9e will be described in detail.

[0256] Figure 22 FIG. shows an example of the structure of the control unit in the charged particle beam device of Modification 1 of the third embodiment. The control unit 9e includes a processing unit 90e and a storage unit 91e. The scanning voltage information 92e and the beam intensifier voltage information 93e are stored in the storage unit 91e.

[0257] Based on the acceleration voltage value Eacc supplied from the PC17 and the beam intensifier voltage information 93e read from the storage unit 91a, the processing unit 90e derives the value of the beam intensifier voltage Vb, that is, the beam intensifier voltage value Eb. The processing unit 90e supplies the calculated beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0258] Based on the acceleration voltage value Eacc supplied from the PC17 and the derived beam intensifier voltage value Eb, the processing unit 90e derives the value of the first voltage VdefU, that is, the first voltage value EdefU, and the value of the second voltage VdefL, that is, the second voltage value EdefL. The processing unit 90e outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU60.

[0259] Based on the value of the acceleration voltage value Eacc supplied from the PC17 and the derived beam intensifier voltage value Eb, the processing unit 90e derives the first voltage value EdefU and the second voltage value EdefL. For example, the processing unit 90e derives the value of the first voltage VdefU and the value of the second voltage VdefL based on Equation (2) and Equation (3). In Equation (2), k2 is a proportionality constant. In Equation (3), k3 is a proportionality constant.

[0260] VdefU = k2 × (Vacc + Vb) (2)

[0261] VdefL = k3 × (Vacc + Vb) (3)

[0262] The processing unit 90e outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU60.

[0263] The scan voltage information 92e can apply the scan voltage information 92a. The beam intensifier voltage information 93e can apply the beam intensifier voltage information 93a.

[0264] Next, the following processing for the operation of the charged particle beam apparatus will be described: deriving the first voltage value EdefU and the second voltage value EdefL, and setting the derived first voltage value EdefU and second voltage value EdefL.

[0265] Figure 23 It is a flowchart showing an example of the operation of the charged particle beam apparatus according to Modification 1 of the third embodiment.

[0266] Steps S41 to S44 can apply Steps S11 to S14 described with reference to Figure 14 as described.

[0267] (Step S45)

[0268] In the charged particle beam apparatus D1, the processing unit 90e changes the first voltage value EdefU and the second voltage value EdefL based on the acquired acceleration voltage value Eacc and the beam intensifier voltage value Eb.

[0269] (Step S46)

[0270] In the charged particle beam apparatus D1, the processing unit 90e sets the first voltage value EdefU and the derived second voltage value EdefL in the MCU60.

[0271] In Modification 1 of the third embodiment, the case where the processing unit 90e derives the first voltage value EdefU and the derived second voltage value EdefL by Expressions (2) and (3) based on the value of the acceleration voltage Vacc and the value of the beam intensifier voltage Vb has been described, but it is not limited to this example. For example, information in the form of a table associating the acceleration voltage value Eacc, the beam intensifier voltage value Eb, the value of the first voltage value EdefU, and the value of the second voltage value EdefL, i.e., scan voltage value information, may also be stored in the storage unit 91e. In this case, the processing unit 90e acquires the first voltage value EdefU and the second voltage value EdefL associated with the combination of the acceleration voltage value Eacc and the beam intensifier voltage value Eb from the scan voltage value information, and outputs the acquired first voltage value EdefU and second voltage value EdefL to the MCU60.

[0272] It is also possible to combine the third embodiment and Modification 1 of the third embodiment. That is, it is also possible to change either the first voltage value, the second voltage, or the blanking voltage value based on the combination of the acceleration voltage value Eacc and the beam booster voltage value Eb.

[0273] In the charged particle beam device according to Modification 1 of the third embodiment, the first voltage value EdefU and the second voltage value EdefL applied to the first scanning electrode 44 and the second scanning electrode 45 are derived based on the combination of the acceleration voltage value Eacc and the beam booster voltage value Eb, and are changed to the derived first voltage value EdefU and second voltage value EdefL. By configuring in this way, voltage control that reflects the acceleration energy of the ion beam incident on the beam booster tube 4a can be performed, and thus, a desired beam orbit can be controlled.

[0274] (Modification 2 of the third embodiment)

[0275] The charged particle beam device D according to Modification 2 of the third embodiment can apply the charged particle beam device of the above-described third embodiment.

[0276] Figure 24 is a partial view of the charged particle beam device according to Modification 2 of the third embodiment. In Figure 24 shown, in the structure of the charged particle beam device described with reference to Figure 3 the beam booster tube 4a, the astigmatism correction electrode 42, the astigmatism correction power supply 62, and the beam booster power supply unit 7 are shown.

[0277] The charged particle beam device D according to Modification 2 of the third embodiment derives the adjustment range ±Vstgaj of the astigmatism correction voltage applied to the astigmatism correction electrode 42 based on the combination of the acceleration voltage Vacc and the beam booster voltage Vb, and changes it to the derived adjustment range ±Estgaj of the astigmatism correction voltage. The charged particle beam device according to Modification 2 of the third embodiment includes a control unit 9f instead of the control unit 9d.

[0278] The structure of the control unit 9f will be described in detail.

[0279] Figure 25 is a diagram showing an example of the structure of the control unit 9f in the charged particle beam device according to Modification 2 of the third embodiment. The control unit 9f includes a processing unit 90f and a storage unit 91f. The scanning voltage information 92f and the beam booster voltage information 93f are stored in the storage unit 91f.

[0280] The processing unit 90f derives the value of the beam intensifier voltage Vb, i.e., the beam intensifier voltage value Eb, based on the acceleration voltage value Eacc supplied from the PC 17 and the beam intensifier voltage information 93f read out from the storage unit 91f. The processing unit 90f supplies the derived beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0281] The processing unit 90f derives the value of the first voltage VdefU, i.e., the first voltage value EdefU, and the value of the second voltage VdefL, i.e., the second voltage value EdefL, based on the acceleration voltage value Eacc supplied from the PC 17 and the derived beam intensifier voltage value Eb. The processing unit 90d outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU 60.

[0282] The processing unit 90f derives the adjustment range ±Vstgaj of the astigmatism correction voltage based on the value of the acceleration voltage value Eacc supplied from the PC 17 and the derived beam intensifier voltage value Eb. For example, the processing unit 90f derives the adjustment range ±Vstgaj of the astigmatism correction voltage based on Equation (4). In Equation (4), k4 is a proportionality constant.

[0283] Vstgaj = k4 × (Vacc + Vb) (4)

[0284] The processing unit 90d outputs the derived adjustment range ±Estgaj of the astigmatism correction voltage to the MCU 60.

[0285] The scanning voltage information 92f can apply the scanning voltage information 92a. The beam intensifier voltage information 93f can apply the beam intensifier voltage information 93a.

[0286] Next, for the operation of the charged particle beam device, the following processing is described: deriving the first voltage value EdefU, the second voltage value EdefL, and the adjustment range ±Estgaj of the astigmatism correction voltage, and setting the derived first voltage value EdefU, second voltage value EdefL, and adjustment range ±Estgaj of the astigmatism correction voltage.

[0287] Figure 26 It is a flowchart showing an example of the operation of the charged particle beam device according to the second modification of the third embodiment.

[0288] Steps S51 to S54 can apply the steps S11 to S14 described with reference to Figure 14 the description.

[0289] (Step S55)

[0290] In the charged particle beam device D1, the processing unit 90f derives the adjustment range ±Estgaj of the astigmatism correction voltage based on the acquired acceleration voltage value Eacc and the beam intensifier voltage value Eb.

[0291] (Step S56)

[0292] In the charged particle beam device D1, the processing unit 90f sets the first voltage value, the derived second voltage value, and the astigmatism correction voltage value in the MCU60.

[0293] In the second modification of the third embodiment, it has been described that the processing unit 90f derives the value of the adjustment range ±Vstgaj of the astigmatism correction voltage by Equation (4) based on the value of the acceleration voltage Vacc and the value of the beam intensifier voltage Vb, but it is not limited to this example. For example, information in the form of a table associating the acceleration voltage value Eacc, the beam intensifier voltage value Eb, and the value of the adjustment range ±Estgaj of the astigmatism correction voltage, i.e., astigmatism correction voltage value information, may be stored in the storage unit 91f. In this case, the processing unit 90f acquires the adjustment range ±Estgaj of the astigmatism correction voltage associated with the combination of the acceleration voltage value Eacc and the beam intensifier voltage value Eb from the astigmatism correction voltage value information, and outputs the acquired adjustment range ±Estgaj of the astigmatism correction voltage to the MCU60.

[0294] The third embodiment, the first modification of the third embodiment, and the second modification of the third embodiment may be combined, or the first modification of the third embodiment and the second modification of the third embodiment may be combined. That is, at least one of the first voltage value, the second voltage, the blanking voltage value, and the adjustment range of the astigmatism correction voltage may be changed based on the combination of the acceleration voltage value Eacc and the beam intensifier voltage value Eb.

[0295] In the charged particle beam device according to the second modification of the third embodiment, the adjustment range ±Estgaj of the astigmatism correction voltage applied to the astigmatism correction electrode, which is derived based on the combination of the acceleration voltage and the beam intensifier voltage, is changed to the derived adjustment range ±Estgaj of the astigmatism correction voltage. By configuring in this way, astigmatism correction can be performed within the adjustment range of the astigmatism correction voltage that reflects the acceleration energy of the ion beam incident on the beam intensifier tube, and thus adjustment can be effectively performed with appropriate adjustment sensitivity.

[0296] In addition, the adjusted value Estg may be stored, and the stored astigmatism correction voltage value Estg may be set as the voltage applied to the astigmatism correction electrode when the same acceleration voltage and beam intensifier voltage are set next time.

[0297] (The third modification of the third embodiment)

[0298] The charged particle beam apparatus D of Modification 3 of the third embodiment can apply the charged particle beam apparatus of the above-described third embodiment.

[0299] Figure 27 It is a partial view of the charged particle beam apparatus of Modification 3 of the third embodiment. In Figure 27 among them, in the structure of the charged particle beam apparatus described with reference to Figure 3 the beam intensifier tube 4a, the alignment electrode 41, the alignment power supply 61, and the beam intensifier power supply unit 7 are shown.

[0300] The charged particle beam apparatus D of Modification 3 of the third embodiment changes the adjustment range ±Valgaj of the alignment voltage applied to the alignment electrode 41 based on the combination of the acceleration voltage Vacc and the beam intensifier voltage Vb. The charged particle beam apparatus of Modification 3 of the third embodiment includes a control unit 9g instead of the control unit 9d.

[0301] The structure of the control unit 9g will be described in detail.

[0302] Figure 28 It is a diagram showing an example of the structure of the control unit 9g in the charged particle beam apparatus of Modification 3 of the third embodiment. The control unit 9g includes a processing unit 90g and a storage unit 91g. The scanning voltage information 92g and the beam intensifier voltage information 93g are stored in the storage unit 91g.

[0303] The processing unit 90g derives the value of the beam intensifier voltage Vb, that is, the beam intensifier voltage value Eb, based on the acceleration voltage value Eacc supplied from the PC17 and the beam intensifier voltage information 93g read from the storage unit 91g. The processing unit 90g supplies the derived beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0304] The processing unit 90g derives the value of the first voltage VdefU, that is, the first voltage value EdefU, and the value of the second voltage VdefL, that is, the second voltage value EdefL, based on the acceleration voltage value Eacc supplied from the PC17 and the derived beam intensifier voltage value Eb. The processing unit 90g outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU60.

[0305] The processing unit 90g derives the adjustment range of the adjustment range ±Valgaj of the alignment voltage based on the value of the acceleration voltage value Eacc supplied from the PC17 and the derived beam intensifier voltage value Eb. For example, the processing unit 90g derives the value of the adjustment range ±Valgaj of the alignment voltage based on Equation (5). In Equation (5), k5 is a proportionality constant.

[0306] Valg = k5 × (Vacc + Vb) (5)

[0307] The processing unit 90g outputs the adjustment range ±Ealgaj of the derived alignment voltage to the MCU60.

[0308] The scan voltage information 92g can apply the scan voltage information 92a. The beam intensifier voltage information 93g can apply the beam intensifier voltage information 93a.

[0309] Next, for the operation of the charged particle beam device, the process of setting the first voltage value EdefU, the second voltage value EdefL, and the adjustment range ±Ealgaj of the alignment voltage will be described.

[0310] Figure 29 It is a flowchart showing an example of the operation of the charged particle beam device according to the second modification of the third embodiment.

[0311] Steps S61 to S64 can apply the steps S11 to S14 described with reference to Figure 14 the description.

[0312] (Step S65)

[0313] In the charged particle beam device D1, the processing unit 90g derives the adjustment range ±Ealgaj of the alignment voltage based on the acquired acceleration voltage value Eacc and the beam intensifier voltage value Eb.

[0314] (Step S66)

[0315] In the charged particle beam device D1, the processing unit 90g sets the first voltage value, the derived second voltage value, and the adjustment range ±Ealgaj of the alignment voltage in the MCU60.

[0316] In the third modification of the third embodiment, the case where the processing unit 90g derives the value of the adjustment range ±Ealgaj of the alignment voltage by Equation (5) based on the value of the acceleration voltage Vacc and the value of the beam intensifier voltage Vb has been described, but it is not limited to this example. For example, information in the form of a table associating the acceleration voltage value Eacc, the beam intensifier voltage value Eb, and the adjustment range ±Ealgaj of the alignment voltage, that is, alignment voltage value information, may be stored in the storage unit 91g. In this case, the processing unit 90g acquires the adjustment range ±Ealgaj of the alignment voltage associated with the combination of the acceleration voltage value Eacc and the beam intensifier voltage value Eb from the alignment voltage value information, and outputs the acquired adjustment range ±Ealgaj of the alignment voltage to the MCU60.

[0317] The third embodiment, Modification Example 1 of the third embodiment, Modification Example 2 of the third embodiment, and Modification Example 3 of the third embodiment can be combined. The third embodiment and Modification Example 3 of the third embodiment can be combined. Modification Example 1 of the third embodiment and Modification Example 3 of the third embodiment can be combined. Also, Modification Example 2 of the third embodiment and Modification Example 3 of the third embodiment can be combined. That is, based on the combination of the acceleration voltage value Eacc and the beam booster voltage value Eb, at least one of the adjustment ranges of the first voltage value, the second voltage, the blanking voltage value, the astigmatism correction voltage, and the alignment voltage can be changed.

[0318] In the charged particle beam device according to Modification Example 3 of the third embodiment, based on the combination of the acceleration voltage and the beam booster voltage, the adjustment range of the alignment voltage, that is, the voltage range ±Ealgaj applied to the alignment electrode, is changed to the derived adjustment range of the alignment voltage ±Ealgaj. By configuring in this way, voltage control reflecting the acceleration energy of the ion beam incident on the beam booster tube can be performed. Therefore, alignment adjustment can be performed within the adjustment range of the alignment voltage, and thus adjustment can be effectively performed with appropriate adjustment sensitivity.

[0319] Alternatively, the adjusted value Ealg can be stored, and when the same acceleration voltage and beam booster voltage are set next time, the astigmatism correction voltage value Ealg stored at that time can be set as the voltage applied to the alignment electrode.

[0320] (Modification Example 4 of the third embodiment)

[0321] The charged particle beam device D1 of Modification Example 4 of the third embodiment can apply the charged particle beam device of the above-described third embodiment.

[0322] The charged particle beam device D1 of Modification Example 4 of the third embodiment changes the condenser lens voltage Vcl, which is the voltage applied to the condenser lens central electrode 3, based on the combination of the acceleration voltage Vacc and the beam booster voltage Vb. The charged particle beam device of Modification Example 4 of the third embodiment includes a control unit 9h instead of the control unit 9d.

[0323] The structure of the control unit 9g will be described in detail.

[0324] Figure 30 FIG. is an example showing the structure of the control unit 9h in the charged particle beam device of Modification Example 4 of the third embodiment. The control unit 9h includes a processing unit 90h and a storage unit 91h. Scan voltage information 92h and beam booster voltage information 93h are stored in the storage unit 91h.

[0325] The processing unit 90h derives the value of the beam intensifier voltage Vb, i.e., the beam intensifier voltage value Eb, based on the acceleration voltage value Eacc supplied from the PC 17 and the beam intensifier voltage information 93h read out from the storage unit 91h. The processing unit 90g supplies the derived beam intensifier voltage value Eb to the beam intensifier power supply unit 7.

[0326] The processing unit 90h derives the value of the first voltage VdefU, i.e., the first voltage value EdefU, and the value of the second voltage VdefL, i.e., the second voltage value EdefL, based on the acceleration voltage value Eacc supplied from the PC 17 and the derived beam intensifier voltage value Eb. The processing unit 90h outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU 60.

[0327] The processing unit 90h derives the value of the condenser lens voltage Vcl based on the value of the acceleration voltage Vacc supplied from the PC 17 and the derived value of the beam intensifier voltage Vb. For example, the processing unit 90h derives the value of the alignment voltage Vcl [kV] based on Equation (6). In Equation (6), n1, n2, n3, and n4 are proportional constants.

[0328] Vcl = n1 × Vacc + n2 × Vacc × Vb + n3 × Vb - n4 (6)

[0329] The processing unit 90h outputs the derived condenser lens voltage value Ecl to the lens power supply unit 8.

[0330] The scan voltage information 92g can apply the scan voltage information 92a. The beam intensifier voltage information 93g can apply the beam intensifier voltage information 93a.

[0331] Next, the following processing for the operation of the charged particle beam device is described: Derive the first voltage value EdefU, the second voltage value EdefL, and the condenser lens voltage value Ecl, and set the derived first voltage value EdefU, second voltage value EdefL, and condenser lens voltage value Ecl.

[0332] Figure 31 It is a flowchart showing an example of the operation of the charged particle beam device according to Modification 4 of the third embodiment.

[0333] Steps S71 to S74 can apply the steps S11 to S14 described with reference to Figure 14 Steps S11 to S14.

[0334] (Step S75)

[0335] In the charged particle beam device D1, the processing unit 90h derives the condenser lens voltage value Ecl based on the acquired acceleration voltage value Eacc and the beam intensifier voltage value Eb.

[0336] (Step S76)

[0337] In the charged particle beam device D1, the processing unit 90h sets the first voltage value and the derived second voltage value in the MCU 60. The processing unit 90h sets the derived condenser lens voltage value in the lens power supply unit 8.

[0338] In Modification Example 4 of the third embodiment, it has been described that the processing unit 90h derives the value of the condenser lens voltage Vcl by Expression (6) based on the value of the acceleration voltage Vacc and the value of the beam booster voltage Vb, but it is not limited to this example. For example, information in the form of a table associating the value of the acceleration voltage Vacc, the value of the beam booster voltage Vb, and the value of the condenser lens voltage Vcl, that is, condenser lens information, may be stored in the storage unit 91h.

[0339] Figure 32 is a diagram showing an example of the condenser lens voltage information. According to Figure 32 , in an example of the condenser lens voltage information, the values of the condenser lens voltage are described for combinations of the acceleration voltage Vacc being 5 kV, 3 kV, 2 kV, and 1 kV respectively and the beam booster voltage Vb being -2 kV, -3 kV, -4 kV, and -5 kV respectively. Figure 32 The acceleration voltage Vacc and the beam booster voltage Vb shown are an example and are not limited to this example.

[0340] The processing unit 90h acquires the condenser lens voltage associated with the combination of the value of the acceleration voltage Vacc and the value of the beam booster voltage Vb from the condenser lens voltage information. With such a configuration, the processing unit 90h can derive the value of the condenser lens voltage without performing calculations, and thus, the processing load on the processing unit 90h can be reduced.

[0341] It is also possible to combine at least two of the third embodiment to Modification Example 4 of the third embodiment. That is, based on the combination of the acceleration voltage value Eacc and the beam booster voltage value Eb, at least one of the first voltage value, the second voltage value, the blanking voltage value, the adjustment range of the astigmatism correction voltage, the adjustment range of the alignment voltage, and the value of the condenser lens voltage may be changed.

[0342] In the charged particle beam device according to Modification Example 4 of the third embodiment, based on the combination of the acceleration voltage and the beam booster voltage, the voltage applied to the condenser lens, that is, the value of the condenser lens voltage Ecl, is derived and changed to the derived value of the condenser lens voltage Ecl. With such a configuration, voltage control reflecting the acceleration energy of the ion beam incident on the beam booster tube can be performed, and thus, the beam orbit can be controlled to be a desired one.

[0343] (Modification Example 5 of the Third Embodiment)

[0344] The charged particle beam apparatus D of Modification 5 of the third embodiment can apply the charged particle beam apparatus of the above-described third embodiment.

[0345] The charged particle beam apparatus D of Modification 5 of the third embodiment changes the objective lens voltage Vol, which is the voltage applied to the objective lens central electrode 5, based on the combination of the acceleration voltage Vacc and the beam booster voltage Vb. The charged particle beam apparatus of Modification 5 of the third embodiment includes a control unit 9i instead of the control unit 9d.

[0346] The structure of the control unit 9i will be described in detail.

[0347] Figure 33 FIG. is an example showing the structure of the control unit 9i in the charged particle beam apparatus of Modification 5 of the third embodiment. The control unit 9i includes a processing unit 90i and a storage unit 91i. The scanning voltage information 92i and the beam booster voltage information 93i are stored in the storage unit 91i.

[0348] The processing unit 90i derives the value of the beam booster voltage Vb, that is, the beam booster voltage value Eb, based on the acceleration voltage value Eacc supplied from the PC 17 and the beam booster voltage information 93i read from the storage unit 91h. The processing unit 90i supplies the derived beam booster voltage value Eb to the beam booster power supply unit 7.

[0349] The processing unit 90i derives the value of the first voltage VdefU, that is, the first voltage value EdefU, and the value of the second voltage VdefL, that is, the second voltage value EdefL, based on the acceleration voltage value Eacc supplied from the PC 17 and the derived beam booster voltage value Eb. The processing unit 90i outputs the derived first voltage value EdefU and second voltage value EdefL to the MCU 60.

[0350] The processing unit 90i derives the value of the objective lens voltage Vol, that is, the objective lens voltage value Eol, based on the acceleration voltage value Eacc supplied from the PC 17 and the value of the derived beam booster voltage value Eb. For example, the processing unit 90i derives the value of the objective lens voltage Vol [kV] based on Equation (7). In Equation (6), m1, m2, m3, and m4 are constants.

[0351] Vol = m1 × Vacc + m2 × Vacc × Vb - m3 × Vb - m4 (7)

[0352] The processing unit 90i outputs the derived condenser lens voltage value Eol to the lens power supply unit 8.

[0353] The scanning voltage information 92i can apply the scanning voltage information 92a. The beam booster voltage information 93i can apply the beam booster voltage information 93a.

[0354] Next, the following processing will be described for the operation of the charged particle beam device: Derive the first voltage value EdefU, the second voltage value EdefL, and the objective lens voltage value Eol, and set the derived first voltage value EdefU, second voltage value EdefL, and objective lens voltage value Eol.

[0355] Figure 34 It is a flowchart showing an example of the operation of the charged particle beam device according to Modification 5 of the third embodiment.

[0356] Steps S81 to S84 can be applied with reference to Figure 14 the steps S11 to S14 described.

[0357] (Step S85)

[0358] In the charged particle beam device D1, the processing unit 90i derives the objective lens voltage value Eol based on the acquired acceleration voltage value Eacc and the beam intensifier voltage value Eb.

[0359] (Step S86)

[0360] In the charged particle beam device D1, the processing unit 90i sets the first voltage value and the derived second voltage value to the MCU60. The processing unit 90i sets the derived objective lens voltage value to the lens power supply unit 8.

[0361] In Modification 5 of the third embodiment, the case where the processing unit 90i derives the objective lens voltage value Vol by Equation (7) based on the value of the acceleration voltage Vacc and the value of the beam intensifier voltage Vb has been described, but it is not limited to this example. For example, information in the form of a table associating the acceleration voltage Vacc, the beam intensifier voltage Vb, and the objective lens voltage, i.e., objective lens information, may be stored in the storage unit 91i.

[0362] Figure 35 It is a diagram showing an example of the objective lens voltage information. According to Figure 35 , in an example of the objective lens voltage information, the objective lens voltage values are described for combinations of the acceleration voltage Vacc being 5 kV, 3 kV, 2 kV, and 1 kV and the beam intensifier voltage Vb being -2 kV, -3 kV, -4 kV, and -5 kV, respectively. Figure 35 The acceleration voltage Vacc and the beam intensifier voltage Vb shown are an example and are not limited to this example.

[0363] The processing unit 90i acquires the objective lens voltage associated with the combination of the value of the acceleration voltage Vacc and the value of the beam intensifier voltage Vb from the objective lens voltage information. With such a configuration, the processing unit 90i can derive the objective lens voltage value without performing calculations, and thus, the processing load on the processing unit 90i can be reduced.

[0364] It is also possible to combine at least two of the third embodiment and the fifth modification of the third embodiment. That is, based on the combination of the acceleration voltage value Eacc and the beam intensifier voltage value Eb, it is also possible to change at least one of the first voltage value, the second voltage value, the blanking voltage value, the adjustment range of the astigmatism correction voltage, the adjustment range of the alignment voltage, the condenser lens voltage value, and the objective lens voltage value.

[0365] In the charged particle beam device according to the fifth modification of the third embodiment, based on the combination of the acceleration voltage and the beam intensifier voltage, the voltage applied to the objective lens, that is, the objective lens voltage value Eol, is derived and changed to the derived objective lens voltage value Eol. With such a configuration, voltage control reflecting the acceleration energy of the ion beam incident on the beam intensifier tube can be performed, and thus, it is possible to control the beam orbit to be desired.

[0366] Part of the charged particle beam device D1 and the composite charged particle beam device D in the above-described embodiments can also be implemented by a computer, for example, the control unit 9 (9, 9a, 9b, 9c, 9d, 9e, 9f, 9g, 9h, 9i). In this case, it can also be implemented by recording a program for realizing this control function in a computer-readable recording medium and causing a computer system to read and execute the program recorded in the recording medium. In addition, the "computer system" mentioned here is a computer system built in the charged particle beam device D1 and the composite charged particle beam device D, and includes hardware such as an OS or peripheral devices. Further, the "computer-readable recording medium" refers to a transportable medium such as a floppy disk, an optical disk, a ROM, a CD-ROM, or a storage device such as a hard disk built in the computer system. Further, the "computer-readable recording medium" may also include a recording medium that dynamically holds a program for a short time, such as a communication line in the case of transmitting a program via a network such as the Internet or a communication line such as a telephone line, or a recording medium that holds a program for a certain time, such as a volatile memory inside the computer system that becomes a server or a client in this case. In addition, the above program may be a program for realizing a part of the above functions, and further, it may also be a program that can realize the above functions by combining with a program already recorded in the computer system.

[0367] In addition, part or all of the control unit 9 in the above-described embodiments can also be implemented in the form of an integrated circuit such as LSI (Large Scale Integration). Each functional block of the control unit 9 can be a processor individually, or a part or all of them can be integrated to form a processor. In addition, the method of integrating into an integrated circuit is not limited to LSI, and it can also be realized by a dedicated circuit or a general-purpose processor. Further, in the case where an integrated circuit technology replacing LSI appears due to the progress of semiconductor technology, an integrated circuit based on that technology can also be used.

[0368] As described above, one embodiment of the present invention has been described in detail with reference to the accompanying drawings. However, the specific structure is not limited to the above structure, and various design changes and the like can be made without departing from the gist of the present invention. For example, the second embodiment and the third embodiment (any one of the third embodiment to the fifth modification of the third embodiment) may also be combined.

Claims

1. A convergent ion beam device, wherein, the convergent ion beam device includes: an ion source that generates ions; a first electrostatic lens that accelerates and converges the ions to form an ion beam; a beam booster electrode that further accelerates the ion beam; one or more electrodes that are disposed within the beam booster electrode and electrostatically deflect the ion beam; a second electrostatic lens that is disposed between the one or more electrodes and a specimen stage and converges the ion beam to which a voltage is applied; and a processing unit that acquires measurement conditions and, based on the acquired measurement conditions, sets at least one of the respective voltages applied to the one or more electrodes and the voltage applied to the electrostatic lens, wherein the measurement conditions include information for determining an acceleration voltage for accelerating the ions and information for determining a beam booster voltage applied to the ion beam converged by the first electrostatic lens.

2. The convergent ion beam device according to claim 1, wherein, the processing unit obtains, from application voltage information in which the measurement conditions are associated with information for determining at least one of the respective voltages applied to the one or more electrodes and information for determining the voltage applied to the electrostatic lens, information for determining at least one of the respective voltages applied to the one or more electrodes and information for determining the voltage applied to the electrostatic lens that conforms to the acquired measurement conditions, and sets at least one of the voltage applied to the one or more electrodes and the voltage applied to the electrostatic lens based on the obtained information for determining at least one of the voltages.

3. The convergent ion beam device according to claim 1 or 2, wherein, the one or more electrodes include: an alignment electrode that is disposed within the beam booster electrode and corrects an offset of the optical axis of the ion beam; an astigmatism correction electrode that is disposed within the beam booster electrode and corrects the roundness of the cross-sectional shape of the ion beam; a blanking electrode that is disposed within the beam booster electrode and deflects the ion beam; and a first scanning electrode and a second scanning electrode that are disposed within the beam booster electrode and scan the ion beam over a specimen.

4. The convergent ion beam device according to claim 1 or 2, wherein, the processing unit calculates a sum of the acceleration voltage and the beam booster voltage based on the information for determining the acceleration voltage and the information for determining the beam booster voltage, and sets at least one of the respective voltages applied to the one or more electrodes based on the calculated sum.

5. A control method for a convergent ion beam device, wherein the convergent ion beam device includes: an ion source that generates ions; a first electrostatic lens that accelerates and converges the ions to form an ion beam; a beam booster electrode that further accelerates the ion beam; one or more electrodes that are disposed within the beam booster electrode and electrostatically deflect the ion beam; and a second electrostatic lens that is disposed between the one or more electrodes and a specimen stage and converges the ion beam to which a voltage is applied, wherein the control method for the convergent ion beam device includes the following steps: Obtain measurement conditions; and Based on the obtained measurement conditions, set at least one voltage among the respective voltages applied to one or more of the electrodes and the voltage applied to the electrostatic lens, The measurement conditions include information for determining an acceleration voltage for accelerating the ions and information for determining a beam intensifier voltage applied to the ion beam converged by the first electrostatic lens.

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