Bump structure and method for manufacturing bump structure

Abstract

The present application relates to a bump structure and a method for manufacturing the bump structure. Specifically, the method for manufacturing the bump structure includes forming a passivation layer above a substrate. A metal pad structure is formed above the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer containing polyimide is formed above the passivation layer and the metal pad structure. A metal bump is formed above the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloolefins, tricycloolefins, spiroalkanes, and heterocycles.

Description

[0001] Related Applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 62 / 928,938, filed on October 31, 2019, the entire contents of which are incorporated herein by reference. Background Art

[0003] As consumer devices with increasingly better performance become smaller in response to consumer demand, the various components of these devices must also decrease in size. Semiconductor devices that constitute the main components of consumer devices (e.g., mobile phones, computer tablets, etc.) have become increasingly smaller. The reduction in size of semiconductor devices has been in line with advances in semiconductor manufacturing technology (e.g., forming connections between semiconductor devices).

[0004] As the electronics industry develops three-dimensional integrated circuits (3D ICs) based on through-silicon via (TSV) technology, the processing and reliability of bumps used to interconnect stacked dies are being actively studied. In smaller devices, delamination of dielectric layers (e.g., very low-k dielectric layers) in the area of ​​the bumps is a problem. Delamination of very low-k dielectric layers can lead to device failure or malfunction. Summary of the invention

[0005] According to one embodiment of the present disclosure, a method for manufacturing a bump structure is provided, the method comprising:

[0006] forming a passivation layer on the substrate;

[0007] forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure;

[0008] forming a polyimide layer including polyimide over the passivation layer and the metal pad structure; and

[0009] A metal bump is formed on the metal pad structure and the polyimide layer, wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloolefins, tricycloolefins, spiroalkanes, and heterocycles.

[0010] According to another embodiment of the present disclosure, a method for manufacturing a bump structure is provided, the method comprising:

[0011] forming a passivation layer on the substrate;

[0012] forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure;

[0013] forming a polyimide layer including polyimide over the passivation layer and the metal pad structure; and

[0014] forming metal bumps on the metal pad structure and the polyimide layer,

[0015] wherein the metal bump is in electrical contact with the metal pad structure, and

[0016] The polyimide layer is adhered to the passivation layer and the metal pad structure via an adhesion promoter, wherein the adhesion promoter chemically bonds to the polyimide, the passivation layer, and the metal pad structure.

[0017] According to yet another embodiment of the present disclosure, there is provided a bump structure, the bump structure comprising:

[0018] a passivation layer surrounding the metal pad;

[0019] a polyimide layer comprising polyimide disposed over the passivation layer and the metal pad; and

[0020] a metal bump, the metal bump being disposed above the metal pad and the polyimide layer,

[0021] wherein the metal bump is in electrical contact with the metal pad, and

[0022] The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkane, condensed ring, bicycloalkane, tricycloalkane, bicycloolefin, tricycloolefin, spiroalkane, and heterocycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The present disclosure will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It is emphasized that, in accordance with standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the size of the various features may be arbitrarily increased or reduced for clarity of discussion.

[0024] Figure 1A , Figure 1B , Figure 1C , Figure 1D , Figure 1E , Figure 1F , Figure 1G , Figure 1H , Fig. 1I , Figure 1J , Figure 1K , Figure 1L , Figure 1M and Figure 1N are cross-sectional views of stages in a sequential method of fabricating a bump structure according to an embodiment of the present disclosure.

[0025] Figure 2 The formation of a polyimide according to an embodiment of the present disclosure is shown.

[0026] Figure 3A Various dianhydride reactants for forming polyimides according to embodiments of the present disclosure are shown.

[0027] Figure 3B Various diamine reactants for forming polyimides according to embodiments of the present disclosure are shown.

[0028] Figure 4A , Figure 4B and Figure 4C are cross-sectional views of stages in a sequential method of fabricating a bump structure according to an embodiment of the present disclosure.

[0029] Figure 5A , Figure 5B , Figure 5C , Figure 5D , Figure 5E , Fig. 5F and Figure 5G are cross-sectional views of stages in a sequential method of fabricating a bump structure according to an embodiment of the present disclosure.

[0030] Fig. 6A Adhesion promoters for improving the adhesion of a polyimide layer to a metal substrate are shown. Figure 6B An adhesion promoter without a capping solvent is shown. Figure 6C Shown is a solution of an adhesion promoter and a capping solvent according to an embodiment of the present disclosure.

[0031] Figure 7 A process flow for manufacturing a semiconductor device according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0032] It should be understood that the following disclosure provides many different embodiments or examples for realizing different features of the present invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, the size of the element is not limited to the disclosed range or value, but may depend on the process conditions and / or the desired characteristics of the device. In addition, in the following description, forming a first feature above or on a second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may also include an additional feature inserted between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. For simplicity and clarity, various features may be arbitrarily drawn in different proportions.

[0033] In addition, for ease of description, spatially relative terms such as "below", "below", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or feature as shown in the figures to another one or more elements or features. In addition to the orientation depicted in the figures, spatially relative terms are also intended to cover different orientations of the device in use or operation. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein can be interpreted accordingly. In addition, the term "made of" can mean "including" or "consisting of".

[0034] Embodiments of the present disclosure relate to a polyamic acid composition, a bump structure including a polyimide layer, a semiconductor device, a method for forming a polyimide layer, a method for manufacturing a bump structure, and a method for manufacturing a semiconductor device. Embodiments of the present disclosure relate to a bump structure for an integrated circuit, the bump structure including a polyimide layer having a high Young's modulus.

[0035] Figures 1A to 1N is a cross-sectional view of various stages of a sequential method for manufacturing a bump structure according to one embodiment of the present disclosure. It should be understood that additional embodiments of the method may be Figures 1A to 1N Additional operations are provided before, during, and after the processes shown, and some of the operations described below may be replaced or eliminated. The order of the operations / processes may be interchangeable. Figure 1A As shown, in some embodiments, a dielectric layer 15 is formed over a substrate 10. In some embodiments, the substrate 10 includes a semiconductor device 5 disposed over a semiconductor die (e.g., a silicon die). In some embodiments, the semiconductor device 5 includes one or more transistors, such as field effect transistors. In other embodiments, the semiconductor device 5 includes capacitors, inductors, resistors, diodes, integrated circuits, and associated wiring and interconnects embedded in an insulating layer.

[0036] In some embodiments, the dielectric layer 15 is an interlayer dielectric (ILD) layer. The material used for the ILD layer 15 includes compounds containing Si, O, C and / or H, such as silicon oxide, SiCOH and SiOC. In some embodiments, the dielectric layer is an extremely low k (ELK) material (ELK) having a dielectric constant of less than about 2.5. In some embodiments, the dielectric constant of ELK is between about 1.8 and about 2.1. In some embodiments, the ELK material includes porous SiCOH or porous SiOC. The dielectric layer 15 can be formed by chemical vapor deposition (CVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (CVD) or atomic layer deposition (ALD) or any other suitable film formation method. Organic materials, such as polymers, can also be used for the ILD layer 15.

[0037] In some embodiments, openings or trenches 17 are formed in dielectric layer 15 using appropriate photolithography and etching operations, such as Figure 1B In some embodiments, the opening is located above an electrical contact on the semiconductor device 5 in the substrate. Figure 1C As shown, the opening 17 is then filled with a conductive material (e.g., a metal) to form a metal contact 20 that connects the semiconductor device 5 to a metal pad structure to be formed subsequently. In some embodiments, the metal includes aluminum, copper, nickel, titanium, tantalum, tungsten, cobalt, molybdenum, and alloys thereof. The metal can be deposited by physical vapor deposition (PVD) (e.g., sputtering), chemical vapor deposition (CVD), atomic layer deposition (ALD), or electroplating. In some embodiments, after depositing the metal, a planarization operation is performed to remove the metal covering the upper surface of the dielectric layer 15. In some embodiments, the planarization operation is a chemical mechanical polishing (CMP) operation or an etch-back operation. In some embodiments, the metal contact 20 is a metal interconnect.

[0038] A passivation layer 25 is then formed over the dielectric layer 15 and the metal contacts 20. Figure 1D In some embodiments, the passivation layer 25 is a first passivation layer, and one or more additional passivation layers are formed over the first passivation layer 25. For example, Figure 1EAs shown, a second passivation layer 30 is formed over the first passivation layer 25. In some embodiments, the first passivation layer 25 and the second passivation layer 30 are formed of different materials, or are formed under different deposition parameters to provide passivation layers with different physical properties (e.g., different densities and porosities). The first passivation layer and the second passivation layer may be oxide layers (e.g., silicon oxide), or nitride layers (e.g., silicon nitride). In some embodiments, the first passivation layer 25 is silicon dioxide, and the second passivation layer 30 is silicon nitride. In some embodiments, the first passivation layer and the second passivation layer independently have a thickness in the range of about 1 μm to about 5 μm. In some embodiments, if the passivation layer is less than about 1 μm, the passivation layer does not have sufficient thickness, and if the passivation layer is greater than about 5 μm, the passivation layer does not obtain additional benefits and the thickness of the entire device is unnecessarily increased.

[0039] like Figure 1F As shown, appropriate photolithography and etching operations are used to form openings 33 in one or more passivation layers to expose metal contacts 20. Then, as shown in FIG. Figure 1G As shown, a metal pad structure 35 is formed by forming a metal layer over the opening 33 and the passivation layer 30. In some embodiments, the metal pad structure 35 is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, titanium nitride, hafnium, tin, ruthenium, tantalum, tantalum nitride, their alloys or their multilayers. In some embodiments, the metal pad is an AlCu alloy. In some embodiments, the metal layer is formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition or electroplating. In some embodiments, the metal layer undergoes planarization, such as by chemical mechanical polishing (CMP) or etch-back operation. In some embodiments, the portion of the metal layer covering the second passivation layer 30 is removed by appropriate photolithography and etching operations to form the metal pad structure 35.

[0040] After forming the metal pad structure 35, the deposition of the second passivation layer 30 is continued so that the second passivation layer 30 covers the top surface of the metal pad structure 35. In some embodiments, a third passivation layer is formed, wherein the third passivation layer is a different material from the second passivation layer. Then, the second passivation layer 30 is planarized, such as by CMP or etch back, and an opening 37 is formed in the second passivation layer 30 above the metal pad structure 35 using appropriate photolithography and etching operations. In some embodiments, as shown in FIG. Figure 1H As shown, the top of the metal pad structure 35 is recessed using appropriate photolithography patterning and etching operations. In some embodiments, the upper portion of the metal pad structure 35 extends along the X direction (horizontal direction) from the lower sidewall, which extends in the Y direction (vertical direction) of the metal pad structure 35.

[0041] like Fig. 1IAs shown, an organic material (e.g., polymer) layer, such as a polyimide layer 40 including polyimide, is formed over the second passivation layer 30 and the metal pad structure 35. The polyimide film 40 is patterned using appropriate photolithography and etching operations to expose the surface of the metal pad structure 35 through the opening 37'. In some embodiments, the thickness of the polyimide layer 40 after curing is in the range of about 2 μm to about 10 μm. If the thickness of the polyimide layer is less than about 2 μm, the polyimide layer may provide insufficient protection for the passivation layer; and if the thickness of the polyimide layer is greater than about 10 μm, no additional benefits are obtained and the thickness of the entire device is unnecessarily increased.

[0042] In some embodiments, the polyimide layer 40 is prepared by forming a polyamic acid composition including polyamic acid over the device, and then converting the polyamic acid into polyimide by heating the polyamic acid at a temperature in the range of about 150° C. to about 350° C. At temperatures below about 150° C., there may not be a sufficient amount of polyamic acid converted into polyimide. At temperatures above about 350° C., the substrate may warp or be damaged. The polyimide layer serves as a buffer layer to distribute the pressure generated during the flip-chip die bonding operation over the entire surface of the device, thereby protecting the device from damage when the pressure is concentrated in the area around the bump.

[0043] In some embodiments, the polyamic acid is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of cycloalkanes, fused rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. The dianhydride reacts with the diamine to form a polyimide. Figure 2 In some embodiments, the dianhydride and the diamine initially form a polyamic acid, and upon heating the polyamic acid, the polyamic acid is converted to a polyimide.

[0044] In some embodiments, at least one of the dianhydride and the diamine includes a tricycloalkane or a tricycloolefin. In some embodiments, at least one of the dianhydride and the diamine includes two or more cyclic groups. In some embodiments, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In some embodiments, the cycloalkane is selected from the group consisting of: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In some embodiments, the condensed ring is selected from the group consisting of: naphthalene, anthracene, phenanthrene, In some embodiments, the bicycloalkane is bicyclo[3.2.0]heptane. In some embodiments, the tricycloalkane is adamantane. In some embodiments, the spiroalkane is spiro[2.2]pentane. In some embodiments, the heterocycle is selected from the group consisting of thiolane, oxolane and pyrrole.

[0045] In some embodiments, Figure 3A As shown, the dianhydride is selected from the group consisting of cyclobutanetetracarboxylic dianhydride, 4,4'-biphenyltetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 5,5'-(9H-fluorene-9,9-diyl)bis(2-benzofuran-1,3-dione), 2,3,6,7-naphthalenetetracarboxylic acid 2,3:6,7-dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride and 4,4'-(acetylene-1,2-diyl)-diphthalic anhydride. In some embodiments, as Figure 3B As shown, the diamine is selected from the group consisting of bis(aminoethyl)norbornane, 2,6-diaminoanthraquinone, 1,5-diaminonaphthalene, 4,4″-diamino-p-terphenyl, 9,9-bis(4-aminophenyl)fluorene, 2,7-diaminofluorene, 2,6-diaminopyridine and 3,6-diaminocarbazole.

[0046] In some embodiments, the Young's modulus of the polyimide layer 40 is in a range of about 4.5 GPa to about 7 GPa. In some embodiments, the Young's modulus of the polyimide layer 40 is in a range of greater than 5 GPa to about 7 GPa.

[0047] In some embodiments, Figure 1JAs shown, the under-bump metallization layer (seed layer) 45 is formed over the polyimide layer 40 and the metal liner 35. In some embodiments, the under-bump metallization layer 45 includes a double layer having a titanium-based layer and a copper-based layer. In some embodiments, the titanium-based layer comprises titanium, a titanium alloy, and a titanium compound containing 50 mol% or more of titanium, and the copper-based layer comprises copper, a copper alloy, and a copper compound containing 50 mol% or more of copper. In some embodiments, the thickness of the under-bump metallization layer 45 is in the range of about 50 nm to about 1 μm. In some embodiments, the titanium-based layer is the lower layer of the double layer, and the thickness of the titanium-based layer is in the range of about 25 nm to about 400 nm. In other embodiments, the thickness of the titanium-based layer is in the range of about 50 nm to about 200 nm. In some embodiments, the copper-based layer is the upper layer of the double layer, and the thickness of the copper-based layer is in the range of about 25 nm to about 800 nm. In other embodiments, the copper-based layer has a thickness in a range from about 100 nm to about 600 nm.

[0048] Then, if Figure 1K As shown, a photoresist layer 50 is formed over the under-bump metallization layer 45 or the polyimide layer 40. The photoresist layer 50 is patterned using an appropriate photolithography operation to form an opening 53 in the photoresist layer over the metal pad structure 35. The photoresist layer 50 may be a positive tone resist or a negative tone resist. A positive tone resist refers to a photoresist material that becomes soluble in a developer when exposed to radiation (usually UV light), while the unexposed (or less exposed) areas of the photoresist are insoluble in the developer. On the other hand, a negative tone resist refers to a photoresist material that becomes insoluble in a developer when exposed to radiation, while the unexposed (or less exposed) areas of the photoresist are soluble in the developer. The areas of the negative tone resist that become insoluble when exposed to radiation may become insoluble due to a cross-linking reaction caused by exposure to radiation.

[0049] Whether the resist is positive or negative tone may depend on the type of developer used to develop the resist. For example, when the developer is a water-based developer (e.g., tetramethylammonium hydroxide (TMAH) solution), some positive tone photoresists provide positive patterns (i.e., the exposed area is removed by the developer). On the other hand, when the developer is an organic solvent, the same photoresist provides a negative pattern (i.e., the unexposed area is removed by the developer). In addition, in some negative tone photoresists developed with TMAH solutions, the unexposed areas of the photoresist are removed by TMAH, and the exposed areas of the photoresist that undergo crosslinking after exposure to actinic radiation remain on the substrate after development. In some embodiments of the present disclosure, the negative tone photoresist is exposed to actinic radiation. The exposed portion of the negative tone photoresist undergoes crosslinking due to exposure to actinic radiation, and during development, the unexposed, uncrosslinked parts of the photoresist are removed by the developer, so that the exposed areas of the photoresist remain on the substrate.

[0050] Then, metal bumps 55 are disposed over the metal pad structure 35 and the polyimide layer 40. Figure 1L As shown, a metal bump is formed by depositing a metal in a photoresist opening 53. The metal bump 55 is in electrical contact with the metal pad structure 35. In some embodiments, the metal bump 55 is in electrical contact with the metal pad structure 35 via an under-bump metallization layer 45. In some embodiments, the metal bump 55 is formed by one or more metals selected from the group consisting of: aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and alloys thereof. In some embodiments, the metal bump 55 is formed by electroplating, physical vapor deposition, chemical vapor deposition, or evaporative deposition. In some embodiments, the thickness of the metal bump 55 is in the range of about 500 nm to about 50 μm.

[0051] In some embodiments, a solder layer 60 is formed over the metal bumps. In some embodiments, the solder layer is made of a tin-containing alloy selected from the group consisting of: PbSn, AgSn, SnAgCu, CuSnNi, AgCuSbSn, AuSn, and CuSn.

[0052] Then, if Figure 1M As shown, the photoresist layer 50 is removed using a suitable photoresist removal technique, such as a solvent stripping operation or a plasma ashing operation. In some embodiments, the exposed portion of the under bump metallization layer 45 is removed by a suitable etching operation. In some embodiments, as Figure 1N As shown, after removing the photoresist layer 50, the solder layer 60 is reflowed to form a smooth hemispherical shape. The solder layer 60 is reflowed by heating the solder to a temperature at which it softens and flows.

[0053] Figure 4A , Figure 4B and Figure 4C are cross-sectional views of stages in a sequential method of fabricating a semiconductor device according to one embodiment of the present disclosure. Figure 4A The structures in this article are referenced Figures 1A to 1F Then, as Figure 4A As shown, a metal pad structure 35 is formed by forming a metal layer over the opening 33 and the passivation layer 30. In some embodiments, the metal pad structure 35 is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, titanium nitride, hafnium, tin, ruthenium, tantalum, tantalum nitride, their alloys or multilayers thereof. In some embodiments, the metal pad is an AlCu alloy. In some embodiments, the metal layer is formed by PVD, CVD, ALD or electroplating. In some embodiments, the metal layer undergoes planarization, such as by CMP or etch-back operations. In some embodiments, the portion of the metal layer covering the second passivation layer 30 is removed by appropriate photolithography and etching operations to form the metal pad structure 35.

[0054] After forming the metal pad structure 35, the deposition of the second passivation layer 30 is continued so that the second passivation layer covers the top surface of the metal pad structure 35. Then, the metal second passivation layer 30 is planarized, for example, by CMP or etch-back, and an opening 37 is formed in the second passivation layer 30 above the metal pad structure 35 using appropriate photolithography and etching operations. Figure 4B As shown, the top of the metal pad structure 35 is recessed using appropriate photolithographic patterning and etching operations. In some embodiments, the sidewalls of the metal pad structure 35 are arranged in a substantially straight line along the Y direction.

[0055] Figure 4B The structure is then referred to as Figures 1I to 1N The method is described to provide Figure 4C The structure shown has a metal bump structure 55 with a reflowed hemispherical solder layer 60 .

[0056] FIG. 5A to FIG. 5G are cross-sectional views of stages in a sequential method of fabricating a semiconductor device according to one embodiment of the present disclosure. Figure 5A The structures in this article are referenced Figures 1A to 1L The preparation was carried out as described in the procedure. Figure 5BAs shown, after forming the first polyimide layer 40a, a second polyimide layer 40b is formed on the first polyimide layer 40a. The first polyimide layer 40a includes a first polyimide, and the second polyimide layer 40b includes a second polyimide. Each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloolefins, tricycloolefins, spiroalkanes, and heterocycles, and the first polyimide and the second polyimide are different. The first polyimide layer 40a and the second polyimide layer 40b are formed of the materials and are prepared according to the reference 1 herein. Figure 1L The disclosed method forms.

[0057] In some embodiments, the first polyimide and the second polyimide are selected to provide a desired Young's modulus. In some embodiments, the first polyimide layer 40a and the second polyimide layer 40b have different Young's moduli, and the Young's modulus of the combined first and second polyimide layers is in the range of about 4.5 GPa to about 7 GPa. In some embodiments, the Young's modulus of the combined first and second polyimide layers is in the range of greater than 5 GPa to about 7 GPa. In some embodiments, the Young's modulus of the first polyimide layer 40a is greater than the Young's modulus of the second polyimide layer 40b. In other embodiments, the Young's modulus of the second polyimide layer 40b is greater than the Young's modulus of the first polyimide layer 40a.

[0058] In some embodiments, the first polyimide layer 40a is formed by applying a polyamic acid composition over the passivation layer 30 and the metal pad structure 35 to form a first polyamic acid layer, and then converting the first polyamic acid layer into the first polyimide layer 40a by heating the first polyamic acid layer at a temperature in the range of about 150° C. to about 350° C. Then, the second polyimide layer 40b is formed by applying a polyamic acid composition over the first polyimide layer 40a to form a second polyamic acid layer, and then converting the second polyamic acid layer into the second polyimide layer 40b by heating the second polyamic acid layer at a temperature in the range of about 150° C. to about 350° C. In other embodiments, the first polyamic acid layer is formed over the passivation layer 30 and the metal pad structure 35. A second polyamic acid layer is formed above the first polyamic acid layer, and the two polyamic acid layers are then heated at a temperature in the range of about 150°C to about 350°C to convert the first and second polyamic acid layers into a first polyimide layer 40a and a second polyimide layer 40b. In some embodiments, the polyamic acid composition is mixed with a solvent and applied to the device structure by a coating operation (e.g., a spin coating operation). Subsequently, the polyamic acid layer is heated at a temperature in the range of about 40°C to about 120°C to dry the polyamic acid layer and remove excess solvent, and then the polyamic acid layer is converted into a polyimide layer.

[0059] In some embodiments, the thickness of each of the first polyimide layer 40a and the second polyimide layer 40b is in the range of about 1 μm to about 9 μm, and after curing the polyimide layers, the total thickness of the first polyimide layer 40a and the second polyimide layer 40b is in the range of about 2 μm to about 10 μm.

[0060] In some embodiments, Figure 5C As shown, an under bump metallization layer (seed layer) 45 is formed over the second polyimide layer 40b and the metal liner structure 35. In some embodiments, the under bump metallization layer 45 includes a double layer having a titanium-based layer and a copper-based layer. In some embodiments, the thickness of the under bump metallization layer 45 is in the range of about 50 nm to about 1 μm.

[0061] Then, if Figure 5D As shown, a photoresist layer 50 is formed over the under bump metallization layer 45 or the second polyimide layer 40 b. The photoresist layer 50 is patterned using a suitable photolithography operation to form an opening 53 in the photoresist layer over the metal pad structure 35 .

[0062] like Figure 5E As shown, then with reference to this article Figure 1LThe metal bump 55 is disposed on the metal pad structure 35 and the second polyimide layer 40b or the under-bump metallization layer 45 in a similar manner as described above. Figure 5E As shown, metal bumps 55 are formed by depositing metal, such as one or more metals selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc and alloys thereof, in photoresist openings 53. A solder layer 60 is formed over the metal bumps 55.

[0063] Then, if Fig. 5F As shown, the photoresist layer 50 is removed using a suitable photoresist removal technique, such as a solvent stripping operation or a plasma ashing operation. In some embodiments, as Figure 5G As shown and as reference Figure 1N As described above, after removing the photoresist layer 50, the solder layer 60 is reflowed to form a smooth hemispherical shape.

[0064] In some embodiments, the polyimide layer 40, 40a is adhered to the passivation layer 30 or the metal pad structure 35 through an adhesion promoter. The adhesion promoter is chemically bonded to the polyimide layer 40, 40a, the passivation layer 30, and the metal pad structure 35. In some embodiments, the adhesion promoter is bonded to the polyimide layer 40, 40a through a cross-linking group on the adhesion promoter. In some embodiments, the cross-linking group is one or more selected from the group consisting of: an alkyl oxide group, an alkenyl group, an alkynyl group, and a triazine group. In some embodiments, the adhesion promoter is bonded to the passivation layer 30 through a silanol group on the adhesion promoter.

[0065] Fig. 6A An adhesion promoter that improves the adhesion of a polyimide layer to a substrate is shown. One end A of the adhesion promoter adheres to the substrate (metal, passivation layer, or dielectric layer), while the other end B of the adhesion promoter adheres to the polyimide layer. The two ends A and B of the adhesion promoter are attached to each other by a chain linking group. In some embodiments, the chain linking group is a hydrocarbon chain.

[0066] In some embodiments, the adhesion promoter includes a chelate group or a silanol group at one end A and a crosslinker group at the other end B. The chelate group includes one or more of N, O, S or halogen. In some embodiments, the adhesion promoter adheres to the metal pad structure 35 through the chelate group. In some embodiments, the adhesion promoter adheres to the passivation layer 30 through the silanol group. In some embodiments, the adhesion promoter adheres to the polyimide layer 40, 40a through the crosslinker group.

[0067] In some embodiments, the chelating group is one or more selected from the group consisting of thiol, thioethane, thipropylene, thietane, thiolane, thienyl, thiacyclohexane, thiopyran, thiepane, thiocycloheptatriene, 2,3-dihydrothiophene, 2,5-dihydrothiophene, hydroxyl, carboxyl, oxirane, oxirene, oxetane, oxadiene ... In some embodiments, the crosslinking agent group includes an alkyl oxide group, an alkenyl group, an alkynyl group, or a triazine group.

[0068] Figure 6B An adhesion promoter without a capping solvent is shown. The silanol groups on the adhesion promoter are unstable. In the absence of a capping solvent, the silanol groups on the adhesion promoter will react with each other and form silica gel. Figure 6C A solution of an adhesion promoter and a capping solvent (first solvent) according to an embodiment of the present disclosure is shown. The capping solvent solvates the silanol groups to keep the adhesion promoter in solution until the silanol groups on the adhesion promoter react with the silanol groups on the passivation layer 30 to adhere the adhesion promoter to the passivation layer 30.

[0069] In some embodiments, the capping solvent (first solvent) is one or more selected from the group consisting of 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutanol, tert-butanol, pentan-2-ol, 3-methylbutan-1-ol, 3-methylbutan-2-ol, 2-methylbutan-1-ol, 2,2-dimethylpropan-1-ol, pentan-3-ol, pentan-2-ol, 3-methylbutan-2-ol, 2-methylbutan-2-ol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, ethylene glycol, diethylene glycol, glycerol, 2 -methoxyethanol, 2-ethoxyethanol, 2-propoxyethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-phenoxyethanol, 2-benzoyloxyethanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-propoxy-2-propanol, methyl carbitol, carbitol cellosolve, butyl carbitol, dipropylene glycol methyl ether, tripropylene glycol methyl ether, and crown ether selected from the group consisting of the following items: 12-crown-4, 15-crown-5, 18-crown-6, dibenzo-18-crown-6 and dibenzo-18-crown-6, and combinations thereof. In some embodiments, based on the gross weight of the polyamic acid composition, the polyamic acid composition contains up to 30% by weight of the first solvent. In some embodiments, the polyamic acid composition includes a second solvent, and the second solvent is selected from the group consisting of the following items: one or more of N-methyl-2-pyrrolidone, gamma-butyrolactone and propylene glycol methyl ether acetate. In some embodiments, the concentration of the capping solvent in the polyamic acid composition is up to 30 wt % based on the total weight of the polyamic acid composition.

[0070] One embodiment of the present disclosure includes a method 700 of manufacturing a semiconductor device, such as in Figure 7 In operation S705, a dielectric layer 15, such as an interlayer dielectric (ILD) layer (see FIG. 1 ) is formed over the substrate 10. Figure 1A ). In some embodiments, substrate 10 includes a semiconductor device 5 disposed above a semiconductor die. In some embodiments, semiconductor device 5 includes one or more transistors, capacitors, inductors, resistors, diodes, integrated circuits, and associated wiring and interconnects embedded in an insulating layer.

[0071] like Figure 1B As shown, in operation S710, an opening or trench 17 is formed in the dielectric layer 15 using appropriate photolithography and etching operations. In some embodiments, the opening 17 is located above an electrical contact on the semiconductor device 5 in the substrate. Next, in operation S715, the opening 17 is then filled with a conductive material (e.g., metal) to form a metal contact 20 (see Figure 1C ). In some embodiments, after depositing the metal, a planarization operation is performed to remove the metal covering the upper surface of the dielectric layer 15 .

[0072] Then, in operation S720, a passivation layer 25 is formed over the dielectric layer 15 and the metal contact 20 (see Figure 1D In some embodiments, the passivation layer 25 is a first passivation layer, and a second or additional passivation layer 30 is formed over the first passivation layer 25 in operation S725 (see Figure 1E ). In some embodiments, the first passivation layer 25 and the second passivation layer 30 are formed of different materials. The first passivation layer 25 and the second passivation layer 30 may be an oxide layer (e.g., silicon oxide), or a nitride layer (e.g., silicon nitride). In some embodiments, the first passivation layer 25 or the second passivation layer 30 is an extremely low-k (ELK) material.

[0073] In operation S730, openings 33 are formed in the one or more passivation layers using appropriate photolithography and etching operations to expose the metal contacts 20 (see FIG. Figure 1F Then, in operation S730, a metal pad structure 35 is formed by forming a metal layer over the opening 33 and the passivation layer 30 (see Figure 1G ). In some embodiments, the metal pad structure 35 is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, titanium nitride, hafnium, tin, ruthenium, tantalum, tantalum nitride, alloys thereof, or multilayers thereof. In some embodiments, the metal pad is an AlCu alloy. In some embodiments, the portion of the metal layer covering the second passivation layer 30 is removed by appropriate photolithography and etching operations to form the metal pad structure 35.

[0074] After forming the metal pad structure 35, the deposition of the second passivation layer 30 is continued in operation S740 so that the second passivation layer 30 covers the top surface of the metal pad structure 35. The metal second passivation layer 30 is planarized, for example, by CMP or etching back, and an opening 37 is formed in the second passivation layer 30 above the metal pad structure 35 using appropriate photolithography and etching operations in operation S745 (see FIG. Figure 1H ).

[0075] Then, in operation S750, a polyimide layer 40 including polyimide is formed over the second passivation layer 30 and the metal pad structure 35. The polyimide film 40 is patterned to expose the surface of the metal pad structure 35 through the opening 37' (see FIG. 1 ). Figure 1L In some embodiments, the polyimide layer 40 is prepared by forming a polyamic acid composition comprising polyamic acid over the device and then converting the polyamic acid into polyimide by heating the polyamic acid at a temperature in the range of about 150° C. to about 350° C. Figure 1LIn some embodiments, the polyimide layer is a first polyimide layer 40a, and a second polyimide layer 40b is formed on the first polyimide layer 40a in operation S755 (see Figure 5B ). The second polyimide layer 40b is made of reference Figure 1L The second polyimide layer 40b is made of any polyamic acid composition disclosed, and the second polyimide layer 40b is made of a polyimide different from the first polyimide layer 40a. After the polyimide layers 40, 40a, 40b are formed, an opening 37' is formed in the polyimide layer in operation S760.

[0076] In some embodiments, in operation S765, an under bump metallization layer (seed layer) 45 is formed over the polyimide layers 40, 40b and the metal pad structure 35 (see Figure 1J and Figure 5C In some embodiments, the under bump metallization layer 45 includes a double layer including a titanium-based layer and a copper-based layer.

[0077] In operation S770, a photoresist layer 50 is formed over the under bump metallization layer 45 or the polyimide layer 40, 40b (see Figure 1K and Figure 5D ). The photoresist layer 50 is patterned using an appropriate photolithography operation to form an opening 53 in the photoresist layer above the metal pad structure 35. A metal bump 55 is then disposed over the metal pad structure 35 and the polyimide layer 40, 40b in operation S780. In some embodiments, the metal bump 55 is formed by electroplating, physical vapor deposition, chemical vapor deposition, or evaporative deposition. Then, in operation S785, a solder layer 60 is formed over the metal bump (see Figure 1L and Figure 5E ).

[0078] Next, in operation S790, the photoresist layer 50 is removed using a suitable photoresist removal technique, such as a solvent stripping operation or a plasma ashing operation (see Figure 1M and Fig. 5F In some embodiments, after removing the photoresist layer 50, the solder layer 60 is reflowed in operation S795 (see Figure 1N and Figure 5G ).

[0079] exist Figure 1N , Figure 4C and Figure 5GIn some embodiments, the additional operation S800 is performed on the structure. In some embodiments, the additional operation includes sawing the substrate to separate the multiple structures formed on the substrate into individual tube cores, and then subsequently packaging the individual tube cores. In some embodiments, in operation S805, the tube core is attached to the tube core carrier substrate by a bump structure. In some embodiments, the tube core is attached by a flip-chip tube core bonding operation. In some embodiments, the tube core carrier substrate is a printed circuit board or an interposer.

[0080] After the die is attached to the carrier substrate, an underfill material is applied to the area between the bottom of the die and the carrier substrate in operation S810. The underfill material protects and isolates the bonded bump structure. The underfill material further enhances the adhesion of the die to the carrier substrate.

[0081] In some embodiments, one or more additional components (e.g., a heat sink) are attached to a major surface of the die that is opposite to a surface of the die that faces the carrier substrate. In operation S815, the device is molded with a molding material (e.g., epoxy) to protect and insulate the device. In some embodiments, after any of the operations disclosed herein, an inspection or electrical test of the device is performed to ensure the quality and operability of the device.

[0082] In some embodiments of the present disclosure, the Young's modulus of the polyimide layer of the bump structure is increased to a range of about 4.5 GPa to about 7 GPa. Embodiments of the present disclosure in which the polyimide layer has a disclosed Young's modulus range prevent delamination of the polyimide layer from the underlying passivation layer, thereby preventing damage to the underlying passivation layer. Embodiments of the present disclosure provide improved protection for the underlying extremely low k (ELK) passivation layer. Devices having bump structures according to the present disclosure avoid delamination even after being subjected to stress for more than 100 times during abuse testing.

[0083] One embodiment of the present disclosure is a method for manufacturing a bump structure, the method including forming a passivation layer above a substrate. A metal pad structure is formed above the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer containing polyimide is formed above the passivation layer and the metal pad structure. A metal bump is formed above the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. In one embodiment, at least one of the dianhydride and the diamine includes tricycloalkanes or tricycloalkenes. In one embodiment, at least one of the dianhydride and the diamine includes two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In one embodiment, at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of: naphthalene, anthracene, phenanthrene, Pyrene, cyclopentene, coronene, hexahedra, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine and phenoxathiol. In one embodiment, forming the passivation layer includes: forming a first passivation layer above the substrate; and forming a second passivation layer above the first passivation layer, wherein the first passivation layer and the second passivation layer are made of different materials. In one embodiment, forming a polyimide layer includes: forming a first polyimide layer comprising a first polyimide above the passivation layer; and forming a second polyimide layer comprising a second polyimide, wherein each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes and heterocycles, and the first polyimide and the second polyimide are different. In one embodiment, at least one of the dianhydride and the diamine comprises bicyclo[3.2.0]heptane. In one embodiment, wherein at least one of the dianhydride and the diamine comprises adamantane. In one embodiment, at least one of the dianhydride and the diamine comprises spiro[2.2]pentane. In one embodiment, at least one of the dianhydride and the diamine comprises a heterocycle selected from the group consisting of thiolane, oxopentane, and pyrrole. In one embodiment, the dianhydride is selected from the group consisting of cyclobutanetetracarboxylic dianhydride, 4,4'-biphenyltetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 5,5'-(9H-fluorene-9,9-diyl)bis(2-benzofuran-1,3-dione), 2,3,6,7-naphthalenetetracarboxylic acid 2,3:6,7-dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride and 4,4'-(acetylene-1,2-diyl)-diphthalic anhydride. In one embodiment, the diamine is selected from the group consisting of bis(aminoethyl)norbornane, 2,6-diaminoanthraquinone, 1,5-diaminonaphthalene, 4,4″-diamino-p-terphenyl, 9,9-bis(4-aminophenyl)fluorene, 2,7-diaminofluorene, 2,6-diaminopyridine and 3,6-diaminocarbazole. In one embodiment, the metal bump is formed of a metal selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and alloys thereof. In one embodiment, the metal bump is formed of a metal selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and alloys thereof. In one embodiment, the method includes forming a solder layer over the metal bump. In one embodiment, the solder layer is made of a tin-containing alloy selected from the group consisting of: PbSn, AgSn, SnAgCu, CuSnNi, AgCuSbSn, AuSn and CuSn. In one embodiment, the first passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the second passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the Young's modulus of the polyimide layer is in the range of 4.5 GPa to 7 GPa.In one embodiment, forming the polyimide layer includes heating the polyamic acid layer at a temperature in the range of 150° C. to 350° C. In one embodiment, the method includes patterning the polyimide layer to expose the metal pad structure before forming the metal bump. In one embodiment, the metal pad structure is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, tin, titanium nitride, hafnium, ruthenium, tantalum, tantalum nitride, their alloys, or multilayers thereof. In one embodiment, the method includes forming an underbump metallization layer over the metal pad structure and the polyimide layer before forming the metal bump. In one embodiment, the underbump metallization layer includes a double layer having a titanium-based layer and a copper-based layer. In one embodiment, the titanium-based layer includes titanium, a titanium alloy, and a titanium compound containing 50 mol % or more of titanium, and the copper-based layer includes copper, a copper alloy, and a copper compound containing 50 mol % or more of copper. In one embodiment, the method includes forming a photoresist layer over the passivation layer or the under bump metallization layer, and patterning the photoresist layer to form an opening in the photoresist layer over the metal pad structure before forming the metal bump. In one embodiment, forming the metal bump includes forming a metal layer over the metal pad structure in the opening in the photoresist layer, and removing the photoresist layer. In one embodiment, the method includes forming a solder layer over the metal layer before removing the photoresist layer. In one embodiment, the method includes removing an exposed portion of the under bump metallization layer after removing the photoresist layer. In one embodiment, the method includes reflowing the solder layer to form a solder bump.

[0084] Another embodiment of the present disclosure is a method for manufacturing a bump structure, the method comprising forming a passivation layer above a substrate. A metal pad structure is formed above the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer comprising polyimide is formed above the passivation layer and the metal pad structure, and a metal bump is formed above the metal pad structure and the polyimide layer. The metal bump is in electrical contact with the metal pad structure, and the polyimide layer is adhered to the passivation layer and the metal pad structure through an adhesion promoter, wherein the adhesion promoter is chemically bonded to the polyimide, the passivation layer, and the metal pad structure. In one embodiment, forming a polyimide layer comprises combining a polyamic acid, an adhesion promoter, and a first solvent to form a polyamic acid composition; applying the polyamic acid composition to the passivation layer and the metal pad structure; and heating the polyamic acid composition to a temperature in the range of 150°C to 350°C to convert the polyamic acid into the polyimide. In one embodiment, polyamic acid is the reaction product of dianhydride and diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkane, condensed ring, bicycloalkane, tricycloalkane, bicycloolefin, tricycloolefin, spiroalkane and heterocycle. In one embodiment, the adhesion promoter includes chelate group, silanol group and crosslinker group. In one embodiment, the chelate group includes at least one of N, O, S or halogen. In one embodiment, the chelating group includes at least one of thiol, thioethane, thipropylene ring, thietane, thiolane, thiophene, thiacyclohexane, thiopyran, thiepane, thiocycloheptaene, 2,3-dihydrothiophene, 2,5-dihydrothiophene, hydroxyl, carboxyl, oxirane, ethylene oxide, oxetane, oxopentane, furan, oxirane, pyran, oxetane, oxepin, 2,5-dihydrofuran, 2,3-dihydrofuran, amine, aziridine, azetidine, azetadiene, pyrrolidine, pyrrole, piperidine, pyridine, azepane, azepine, 1-pyrroline, 2-pyrroline, 3-pyrroline, dihydropyridine, cyano, fluoro, chloro, bromo or iodo. In one embodiment, the crosslinker group comprises an alkyl oxide group, an alkenyl group, an alkynyl group, or a triazine group.In one embodiment, the first solvent is at least one of the following: 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutanol, tert-butanol, pentan-2-ol, 3-methylbutan-1-ol, 3-methylbutan-2-ol, 2-methylbutan-1-ol, 2,2-dimethylpropan-1-ol, pentan-3-ol, pentan-2-ol, 3-methylbutan-2-ol, 2-methylbutan-2-ol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, ethylene glycol, diethylene glycol, glycerol, 2-methoxyethanol , 2-ethoxyethanol, 2-propoxyethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-phenoxyethanol, 2-benzoyloxyethanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-propoxy-2-propanol, methyl carbitol, carbitol cellosolve, butyl carbitol, dipropylene glycol methyl ether, tripropylene glycol methyl ether, or a crown ether selected from the group consisting of the following items: 12-crown-4, 15-crown-5, 18-crown-6, dibenzo-18-crown-6, dibenzo-18-crown-6, and combinations thereof. In one embodiment, based on the gross weight of the polyamic acid composition, the polyamic acid composition contains up to 30 weight % of the first solvent. In one embodiment, the polyamic acid composition includes a second solvent, and the second solvent is at least one of N-methyl-2-pyrrolidone, gamma-butyrolactone or propylene glycol methyl ether acetate. In one embodiment, polyamic acid is the reaction product of dianhydride and diamine, and at least one of the dianhydride and the diamine includes cycloalkane, condensed ring, bicycloalkane, tricycloalkane, bicycloolefin, tricycloolefin, spiroalkane, or heterocycle. In one embodiment, at least one of dianhydride and diamine includes tricycloalkane or tricycloolefin. In one embodiment, at least one of dianhydride and diamine includes two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of the following items: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In one embodiment, at least one of dianhydride and diamine includes cycloalkane, and the cycloalkane is selected from the group consisting of the following items: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine includes a condensed ring, and the condensed ring is selected from the group consisting of naphthalene, anthracene, phenanthrene, and . In one embodiment, at least one of the dianhydride and the diamine is bicyclo[3.2.0]heptane. In one embodiment, at least one of the dianhydride and the diamine is adamantane. In one embodiment, at least one of the dianhydride and the diamine is spiro[2.2]pentane. In one embodiment, at least one of the dianhydride and the diamine is a heterocycle selected from the group consisting of thiolane, oxopentane and pyrrole. In one embodiment, the dianhydride is selected from the group consisting of cyclobutanetetracarboxylic dianhydride, 4,4'-biphenyltetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 5,5'-(9H-fluorene-9,9-diyl)bis(2-benzofuran-1,3-dione), 2,3,6,7-naphthalenetetracarboxylic acid 2,3:6,7-dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride and 4,4'-(acetylene-1,2-diyl)-diphthalic anhydride. In one embodiment, the diamine is selected from the group consisting of bis(aminoethyl)norbornane, 2,6-diaminoanthraquinone, 1,5-diaminonaphthalene, 4,4″-diamino-p-terphenyl, 9,9-bis(4-aminophenyl)fluorene, 2,7-diaminofluorene, 2,6-diaminopyridine and 3,6-diaminocarbazole. In one embodiment, the metal bump is formed of a metal selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and alloys thereof. In one embodiment, the method includes forming a solder layer over the metal bump. In one embodiment, the solder layer is selected from the group consisting of In one embodiment, the passivation layer is made of a tin-containing alloy of the group consisting of: PbSn, AgSn, SnAgCu, CuSnNi, AgCuSbSn, AuSn and CuSn. In one embodiment, forming the passivation layer includes: forming a first passivation layer above the substrate; and forming a second passivation layer above the first passivation layer, wherein the first passivation layer and the second passivation layer are made of different materials. In one embodiment, the first passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the second passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the Young's modulus of the polyimide layer is in the range of 4.5 GPa to 7 GPa.In one embodiment, forming a polyimide layer includes: forming a first polyimide layer comprising a first polyimide over the passivation layer; and forming a second polyimide layer comprising a second polyimide over the first polyimide layer, wherein each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloolefins, tricycloolefins, spiroalkanes, and heterocycles, and the first polyimide and the second polyimide are different. In one embodiment, the method includes patterning the polyimide layer to expose a metal pad structure before forming the metal bump. In one embodiment, the metal pad structure is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, tin, titanium nitride, hafnium, ruthenium, tantalum, tantalum nitride, alloys thereof, or multilayers thereof. In one embodiment, the method includes forming an under-bump metallization layer over the metal pad structure and the polyimide layer before forming the metal bump. In one embodiment, the under-bump metallization layer includes a double layer having a titanium-based layer and a copper-based layer. In one embodiment, the titanium-based layer includes titanium, a titanium alloy, and a titanium compound containing 50 mol% or more of titanium, and the copper-based layer includes copper, a copper alloy, and a copper compound containing 50 mol% or more of copper. In one embodiment, the method includes forming a photoresist layer over the passivation layer or the under-bump metallization layer, and patterning the photoresist layer before forming the metal bump to form an opening in the photoresist layer over the metal pad structure. In one embodiment, forming the metal bump includes forming a metal layer over the metal pad structure in the opening in the photoresist layer, and removing the photoresist layer. In one embodiment, the method includes forming a solder layer over the metal layer before removing the photoresist layer. In one embodiment, the method includes removing the exposed portion of the under-bump metallization layer after removing the photoresist layer. In one embodiment, the method includes reflowing the solder layer to form the solder bump.

[0085] Another embodiment of the present disclosure is a bump structure, the bump structure comprising: a passivation layer, the passivation layer surrounding the metal pad; and a polyimide layer comprising polyimide, the polyimide layer being disposed above the passivation layer and the metal pad. The metal bump is disposed above the metal pad and the polyimide layer. The metal bump is in electrical contact with the metal pad, and the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. In one embodiment, at least one of the dianhydride and the diamine comprises tricycloalkanes or tricycloalkenes. In one embodiment, at least one of the dianhydride and the diamine comprises two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In one embodiment, at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of: naphthalene, anthracene, phenanthrene, In one embodiment, at least one of the dianhydride and the diamine is bicyclo[3.2.0]heptane. In one embodiment, at least one of the dianhydride and the diamine is adamantane. In one embodiment, at least one of the dianhydride and the diamine is spiro[2.2]pentane. In one embodiment, at least one of the dianhydride and the diamine is a heterocycle selected from the group consisting of thiolane, oxopentane and pyrrole. In one embodiment, the dianhydride is selected from the group consisting of cyclobutanetetracarboxylic dianhydride, 4,4'-biphenyltetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 5,5'-(9H-fluorene-9,9-diyl)bis(2-benzofuran-1,3-dione), 2,3,6,7-naphthalenetetracarboxylic acid 2,3:6,7-dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride and 4,4'-(acetylene-1,2-diyl)-diphthalic anhydride. In one embodiment, the diamine is selected from the group consisting of bis(aminoethyl)norbornane, 2,6-diaminoanthraquinone, 1,5-diaminonaphthalene, 4,4″-diamino-p-terphenyl, 9,9-bis(4-aminophenyl)fluorene, 2,7-diaminofluorene, 2,6-diaminopyridine and 3,6-diaminocarbazole. In one embodiment, the metal bump is formed of a metal selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and alloys thereof. In one embodiment, the bump structure includes a solder layer disposed over the metal bump. In one embodiment, the solder layer is made of a tin-containing alloy selected from the group consisting of PbSn, AgSn, SnAgCu, CuSnNi, AgCuSbSn, AuSn and CuSn. In one embodiment, the passivation layer includes a first passivation layer and a second passivation layer. Passivation layer, and the first passivation layer and the second passivation layer are made of different materials. In one embodiment, the first passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the second passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the Young's modulus of the polyimide layer is in the range of 4.5GPa to 7GPa. In one embodiment, the polyimide layer includes a first polyimide layer including a first polyimide and a second polyimide layer including a second polyimide disposed above the first polyimide layer, each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes and heterocycles, and the first polyimide and the second polyimide are different.In one embodiment, the metal pad is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, tin, titanium nitride, hafnium, ruthenium, tantalum, tantalum nitride, alloys thereof, or multilayers thereof. In one embodiment, the bump structure includes an underbump metallization layer disposed between the metal bump and the metal pad. In one embodiment, the underbump metallization layer includes a double layer having a titanium-based layer and a copper-based layer. In one embodiment, the titanium-based layer includes titanium, a titanium alloy, and a titanium compound containing 50 mol% or more of titanium, and the copper-based layer includes copper, a copper alloy, and a copper compound containing 50 mol% or more of copper.

[0086] Another embodiment of the present disclosure is a bump structure, the bump structure includes a passivation layer surrounding a metal pad structure. A polyimide layer comprising polyimide is disposed above the passivation layer and the metal pad structure. A metal bump is disposed above the metal pad structure and the polyimide layer, wherein the metal bump is in electrical contact with the metal pad structure. The polyimide layer is adhered to the passivation layer and the metal pad structure through an adhesion promoter, wherein the adhesion promoter is chemically bonded to the polyimide, the passivation layer, and the metal pad structure. In one embodiment, the adhesion promoter is bonded to the polyimide through a cross-linking group on the adhesion promoter. In one embodiment, the cross-linking group is one or more selected from the group consisting of the following items: an alkyl oxide group, an alkenyl group, an alkynyl group, and a triazine group. In one embodiment, the adhesion promoter is bonded to the passivation layer through a silanol group on the adhesion promoter. In one embodiment, the adhesion promoter is bonded to the metal pad structure. In one embodiment, the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. In one embodiment, at least one of the dianhydride and the diamine includes tricycloalkanes or tricycloalkenes. In one embodiment, at least one of the dianhydride and the diamine includes two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH-, and -SO2-. In one embodiment, at least one of the dianhydride and the diamine is a cycloalkane selected from the group consisting of: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine is a fused ring selected from the group consisting of naphthalene, anthracene, phenanthrene, In one embodiment, at least one of the dianhydride and the diamine is bicyclo[3.2.0]heptane. In one embodiment, at least one of the dianhydride and the diamine is adamantane. In one embodiment, at least one of the dianhydride and the diamine is spiro[2.2]pentane. In one embodiment, at least one of the dianhydride and the diamine is a heterocycle selected from the group consisting of thiolane, oxopentane and pyrrole. In one embodiment, the dianhydride is selected from the group consisting of cyclobutanetetracarboxylic dianhydride, 4,4'-biphenyltetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 5,5'-(9H-fluorene-9,9-diyl)bis(2-benzofuran-1,3-dione), 2,3,6,7-naphthalenetetracarboxylic acid 2,3:6,7-dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride and 4,4'-(acetylene-1,2-diyl)-diphthalic anhydride. In one embodiment, the diamine is selected from the group consisting of bis(aminoethyl)norbornane, 2,6-diaminoanthraquinone, 1,5-diaminonaphthalene, 4,4″-diamino-p-terphenyl, 9,9-bis(4-aminophenyl)fluorene, 2,7-diaminofluorene, 2,6-diaminopyridine and 3,6-diaminocarbazole. In one embodiment, the metal bump is formed of a metal selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and alloys thereof. In one embodiment, the bump structure includes a solder layer disposed over the metal bump. In one embodiment, the solder layer is made of a tin-containing alloy selected from the group consisting of PbSn, AgSn, SnAgCu, CuSnNi, AgCuSbSn, AuSn and CuSn. In one embodiment, the passivation layer includes a first passivation layer and a second passivation layer. Passivation layer, wherein the first passivation layer and the second passivation layer are made of different materials. In one embodiment, the first passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the second passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the Young's modulus of the polyimide layer is in the range of 4.5GPa to 7GPa. In one embodiment, the polyimide layer includes a first polyimide layer including a first polyimide and a second polyimide layer including a second polyimide disposed above the first polyimide layer, each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes and heterocycles, and the first polyimide and the second polyimide are different.In one embodiment, the metal pad structure is made of aluminum, copper, silver, gold, nickel, tungsten, titanium, tin, titanium nitride, hafnium, ruthenium, tantalum, tantalum nitride, alloys thereof, or multilayers thereof. In one embodiment, the metal pad structure includes a metal contact pad and an under bump metallization layer disposed above the metal contact pad. In one embodiment, the under bump metallization layer includes a double layer having a titanium-based layer and a copper-based layer. In one embodiment, the titanium-based layer includes titanium, a titanium alloy, and a titanium compound containing 50 mol% or more of titanium, and the copper-based layer includes copper, a copper alloy, and a copper compound containing 50 mol% or more of copper.

[0087] Another embodiment of the present disclosure is a polyamic acid composition, comprising polyamic acid, an adhesion promoter and a first solvent. The adhesion promoter comprises a chelate group, a silanol group and a crosslinker group, wherein the chelate group comprises one or more of N, O, S and halogen. In one embodiment, the chelating group is one or more of a thiol, an oxirane, a thipropylene ring, a thietane, a thiolane, a thienyl, a thihexane, a thiopyran, a thiepane, a thiepine, a 2,3-dihydrothiophene, a 2,5-dihydrothiophene, a hydroxyl, a carboxyl, an oxirane, an ethylene oxide, an oxetane, an oxopentane, a furan, an oxirane, a pyran, an oxetane, an oxepin, a 2,5-dihydrofuran, a 2,3-dihydrofuran, an amine, an aziridine, an azetidine, an azetadiene, a pyrrolidine, a pyrrole, a piperidine, a pyridine, an azepane, an azepine, a 1-pyrroline, a 2-pyrroline, a 3-pyrroline, a dihydropyridine, a cyano, a fluoro, a chloro, a bromo or an iodo group. In one embodiment, the crosslinker group comprises an alkyl oxide group, an alkenyl group, an alkynyl group or a triazine group. In one embodiment, the first solvent is one or more of the following: 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutanol, tert-butanol, pentan-2-ol, 3-methylbutan-1-ol, 3-methylbutan-2-ol, 2-methylbutan-1-ol, 2,2-dimethylpropan-1-ol, pentan-3-ol, pentan-2-ol, 3-methylbutan-2-ol, 2-methylbutan-2-ol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, ethylene glycol, diethylene glycol, glycerol, 2- Methoxyethanol, 2-ethoxyethanol, 2-propoxyethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-phenoxyethanol, 2-benzoyloxyethanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-propoxy-2-propanol, methyl carbitol, carbitol cellosolve, butyl carbitol, dipropylene glycol methyl ether, tripropylene glycol methyl ether, or a crown ether selected from the group consisting of the following items: 12-crown-4, 15-crown-5, 18-crown-6, dibenzo-18-crown-6 and dibenzo-18-crown-6. In one embodiment, based on the weight of the polyamic acid composition, the polyamic acid composition contains up to 30% by weight of the first solvent. In one embodiment, the polyamic acid composition includes a second solvent, which is selected from one or more of N-methyl-2-pyrrolidone, gamma-butyrolactone or propylene glycol methyl ether acetate. In one embodiment, polyamic acid is the reaction product of dianhydride and diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of cycloalkane, condensed ring, bicycloalkane, tricycloalkane, bicycloolefin, tricycloolefin, spiroalkane and heterocycle. In one embodiment, at least one of the dianhydride and the diamine comprises tricycloalkane or tricycloolefin.In one embodiment, at least one of the dianhydride and the diamine includes two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of the following items: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In one embodiment, at least one of the dianhydride and the diamine is a cycloalkane selected from the group consisting of the following items: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine is a condensed ring selected from the group consisting of the following items: naphthalene, anthracene, phenanthrene,. In one embodiment, at least one of the dianhydride and the diamine is bicyclo[3.2.0]heptane. In one embodiment, at least one of the dianhydride and the diamine is adamantane. In one embodiment, at least one of the dianhydride and the diamine is spiro[2.2]pentane. In one embodiment, at least one of the dianhydride and the diamine is a heterocycle selected from the group consisting of thiolane, oxopentane and pyrrole. In one embodiment, the dianhydride is selected from the group consisting of cyclobutanetetracarboxylic dianhydride, 4,4'-biphenyltetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 5,5'-(9H-fluorene-9,9-diyl)bis(2-benzofuran-1,3-dione), 2,3,6,7-naphthalenetetracarboxylic acid 2,3:6,7-dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride and 4,4'-(acetylene-1,2-diyl)-diphthalic anhydride. In one embodiment, the diamine is selected from the group consisting of bis(aminoethyl)norbornane, 2,6-diaminoanthraquinone, 1,5-diaminonaphthalene, 4,4″-diamino-p-terphenyl, 9,9-bis(4-aminophenyl)fluorene, 2,7-diaminofluorene, 2,6-diaminopyridine and 3,6-diaminocarbazole.

[0088] Another embodiment is a method for manufacturing a semiconductor device, the method comprising: forming a first passivation layer over a substrate; and forming an opening in the first passivation layer. A metal pad structure is formed in the opening. A second passivation layer is formed over the metal pad structure. The first passivation layer and the second passivation layer are formed of different materials. An opening is formed in the second passivation layer over the metal pad structure, thereby exposing a portion of the metal pad structure. A polyimide layer containing polyimide is formed over the second passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. Polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. In one embodiment, at least one of the dianhydride and the diamine includes tricycloalkanes or tricycloalkenes. In one embodiment, at least one of the dianhydride and the diamine includes two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In one embodiment, at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of: naphthalene, anthracene, phenanthrene, Pyrene, cyclopentene, coronene, hexahedra, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine and phenoxathiol. In one embodiment, forming a polyimide layer includes: forming a first polyimide layer including a first polyimide over a second passivation layer; and forming a second polyimide layer including a second polyimide, wherein each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes and heterocycles, and the first polyimide and the second polyimide are different. In one embodiment, the metal bump is in electrical contact with the metal pad structure, the polyimide layer is adhered to the second passivation layer and the metal pad structure by an adhesion promoter, and the adhesion promoter is chemically bonded to the polyimide, the second passivation layer, and the metal pad structure. In one embodiment, forming the polyimide layer includes combining polyamic acid, an adhesion promoter, and a first solvent to form a polyamic acid composition; applying the polyamic acid composition over the second passivation layer and the metal pad structure; and heating the polyamic acid composition to a temperature in the range of 150°C to 350°C to convert the polyamic acid into the polyimide. In one embodiment, the polyamic acid is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. In one embodiment, the adhesion promoter comprises a chelating group, a silanol group, and a crosslinking agent group. In one embodiment, the chelating group comprises at least one of N, O, S or halogen. In one embodiment, the chelating group includes at least one of thiol, thioethane, thipropylene ring, thietane, thiolane, thiophene, thiacyclohexane, thiopyran, thiepane, thiocycloheptatriene, 2,3-dihydrothiophene, 2,5-dihydrothiophene, hydroxyl, carboxyl, oxirane, ethylene oxide, oxetane, oxopentane, furan, oxirane, pyran, oxetane, oxepin, 2,5-dihydrofuran, 2,3-dihydrofuran, amine, aziridine, azetidine, azetadiene, pyrrolidine, pyrrole, piperidine, pyridine, azepane, azepane, 1-pyrroline, 2-pyrroline, 3-pyrroline, dihydropyridine, cyano, fluoro, chloro, bromo or iodo. In one embodiment, the substrate is a die. In one embodiment, the method includes attaching the die to the die carrier substrate by bonding the die to the die carrier substrate via metal bumps. In one embodiment, the die is bonded to the die carrier substrate using a flip chip die bonding operation. In one embodiment, the method includes filling a gap between the die and the die carrier substrate with an underfill material.In one embodiment, the method includes covering the die and the die-carrying substrate with a molding material.

[0089] Another embodiment of the present disclosure is a semiconductor device comprising a tube core bonded to a tube core carrier substrate. A passivation layer is disposed above the main side of the tube core facing the tube core carrier substrate, wherein the passivation layer surrounds the first metal pad. The polyimide layer comprises a polyimide disposed above the passivation layer and the first metal pad. A metal bump is disposed above the first metal pad and the polyimide layer. The metal bump is in electrical contact with the first metal pad and the second metal pad on the tube core carrier substrate. Polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of: cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloalkenes, tricycloalkenes, spiroalkanes, and heterocycles. In one embodiment, at least one of the dianhydride and the diamine includes tricycloalkanes or tricycloalkenes. In one embodiment, at least one of the dianhydride and the diamine includes two or more cyclic groups. In one embodiment, the two or more cyclic groups are connected to each other by a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. In one embodiment, at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of: cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane and cyclooctane. In one embodiment, at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of: naphthalene, anthracene, phenanthrene, Pyrene, cyclopentene, coronene, hexahedra, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine and phenoxathiol. In one embodiment, the metal bump is formed by a metal selected from the group consisting of aluminum, copper, chromium, iron, manganese, magnesium, molybdenum, nickel, tin, niobium, tantalum, titanium, tungsten, zinc, and their alloys. In one embodiment, the semiconductor device includes a solder layer disposed above the metal bump. In one embodiment, the solder layer is made of a tin-containing alloy selected from the group consisting of PbSn, AgSn, SnAgCu, CuSnNi, AgCuSbSn, AuSn and CuSn. In one embodiment, the passivation layer includes a first passivation layer and a second passivation layer, wherein the first passivation layer and the second passivation layer are made of different materials. In one embodiment, the first passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the second passivation layer is made of silicon oxide or silicon nitride. In one embodiment, the Young's modulus of the polyimide layer is in the range of 4.5 GPa to 7 GPa. In one embodiment, the polyimide layer includes a first polyimide layer including a first polyimide and a second polyimide layer including a second polyimide disposed above the first polyimide layer, each of the first polyimide and the second polyimide being a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine includes one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloolefins, tricycloolefins, spiroalkanes, and heterocycles, and the first polyimide and the second polyimide are different. In one embodiment, the first metal pad and the second metal pad are made of aluminum, copper, silver, gold, nickel, tungsten, titanium, tin, titanium nitride, hafnium, ruthenium, tantalum, tantalum nitride, alloys thereof, or multilayers thereof. In one embodiment, an under-bump metallization layer is disposed above the first metal pad. In one embodiment, the under bump metallization layer includes a double layer having a titanium-based layer and a copper-based layer. In one embodiment, the titanium-based layer includes titanium, a titanium alloy, and a titanium compound containing 50 mol% or more of titanium, and the copper-based layer includes copper, a copper alloy, and a copper compound containing 50 mol% or more of copper.

[0090] The features of several embodiments or examples are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to carry out the same purposes and / or achieve the same advantages as the embodiments or examples introduced herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications here without departing from the spirit and scope of the present disclosure.

Claims

1. A method for manufacturing a bump structure, the method comprising: forming a passivation layer over the substrate; forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure; forming a polyimide layer including polyimide over the passivation layer and the metal pad structure; as well as forming a metal bump over the metal pad structure and the polyimide layer, wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloolefin, a tricycloolefin, a spiroalkane, and a heterocycle, The forming of the passivation layer comprises: forming a first passivation layer over the substrate; as well as forming a second passivation layer over the first passivation layer, The first passivation layer and the second passivation layer are made of different materials. 2 . The method of claim 1 , wherein at least one of the dianhydride and the diamine comprises a tricycloalkane or a tricycloalkene. 3 . The method of claim 1 , wherein at least one of the dianhydride and the diamine comprises two or more cyclic groups.

4. The method according to claim 3, wherein the two or more cyclic groups are connected to each other via a connecting group selected from the group consisting of: -CH2-, -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. 5 . The method of claim 1 , wherein at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane.

6. The method of claim 1, wherein at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of naphthalene, anthracene, phenanthrene, Pyrene, cardiocyclopentene, coronene, hexahedra, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine and phenoxathiol.

7. The method according to claim 1, wherein forming the polyimide layer comprises: forming a first polyimide layer including a first polyimide over the passivation layer; as well as forming a second polyimide layer including a second polyimide, wherein each of the first polyimide and the second polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a condensed ring, a bicycloalkane, a tricycloalkane, a bicycloolefin, a tricycloolefin, a spiroalkane, and a heterocycle, and The first polyimide and the second polyimide are different. The method according to claim 1 , wherein the first passivation layer is an oxide layer or a nitride layer. 9 . The method according to claim 1 , wherein the second passivation layer is an oxide layer or a nitride layer.

10. A method for manufacturing a bump structure, the method comprising: forming a passivation layer over the substrate; forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure; forming a polyimide layer including polyimide over the passivation layer and the metal pad structure; as well as forming a metal bump over the metal pad structure and the polyimide layer, wherein the metal bump is in electrical contact with the metal pad structure, and the polyimide layer is adhered to the passivation layer and the metal pad structure via an adhesion promoter, wherein the adhesion promoter is chemically bonded to the polyimide, the passivation layer and the metal pad structure; and Wherein forming the polyimide layer comprises: combining a polyamic acid, an adhesion promoter, and a first solvent to form a polyamic acid composition; applying the polyamic acid composition to the passivation layer and metal pad structure; and The polyamic acid composition is heated to a temperature in a range of 150° C. to 350° C. to convert the polyamic acid into the polyimide.

11. The method of claim 10, wherein the polyamic acid is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of cycloalkanes, condensed rings, bicycloalkanes, tricycloalkanes, bicycloolefins, tricycloolefins, spiroalkanes, and heterocycles.

12. The method of claim 10, wherein the adhesion promoter comprises a chelating group, a silanol group, and a crosslinker group.

13. The method of claim 12, wherein the chelating group comprises at least one of N, O, S, or halogen.

14. The method of claim 12, wherein the chelating group comprises at least one of a thiol, an oxirane, a thipropylene ring, a thietane, a thiolane, a thiophene, a thihexane, a thiopyran, a thiepane, a thiepine, a 2,3-dihydrothiophene, a 2,5-dihydrothiophene, a hydroxyl, a carboxyl, an oxirane, an ethylene oxide, an oxetane, an oxolane, a furan, an oxirane, a pyran, an oxetane, an oxepin, a 2,5-dihydrofuran, a 2,3-dihydrofuran, an amine, an aziridine, an azetidine, an azetadiene, a pyrrolidine, a pyrrole, a piperidine, a pyridine, an azepane, an azepine, a 1-pyrroline, a 2-pyrroline, a 3-pyrroline, a dihydropyridine, a cyano, a fluoro, a chloro, a bromo, or an iodo group.

15. A bump structure, comprising: a passivation layer surrounding the metal pad; a polyimide layer comprising polyimide disposed over the passivation layer and the metal pad; and a metal bump disposed above the metal pad and the polyimide layer, wherein the metal bump is in electrical contact with the metal pad, and The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a condensed ring, a bicycloalkane, a tricycloalkane, a bicycloolefin, a tricycloolefin, a spiroalkane, and a heterocycle, wherein at least one of the dianhydride or the diamine comprises two or more cyclic groups, and The two or more cyclic groups are connected to each other through a connecting group selected from the group consisting of: -CH=CH-, -C≡C-, -O-, -C(O)O-, -CF3CH2CF3-, -CH3CH2CH3-, -SH- and -SO2-. 16 . The bump structure according to claim 15 , wherein at least one of the dianhydride and the diamine comprises a tricycloalkane or a tricycloalkene. 17 . The bump structure of claim 15 , wherein at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane.

18. The bump structure according to claim 15, wherein at least one of the dianhydride and the diamine comprises a condensed ring selected from the group consisting of naphthalene, anthracene, phenanthrene, Pyrene, cardiocyclopentene, coronene, hexahedra, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine and phenoxathiol.

19. The bump structure according to claim 15, wherein the passivation layer comprises: a first passivation layer disposed above the substrate; as well as a second passivation layer disposed above the first passivation layer, The first passivation layer and the second passivation layer are made of different materials. 20 . The bump structure according to claim 19 , wherein the first passivation layer and the second passivation layer are made of oxide or nitride.

Images