Semiconductor device and method for manufacturing semiconductor device

Abstract

Provided are a semiconductor device and a manufacturing method of a semiconductor device. The upper side of the front surface is not limited by space. The semiconductor device has a semiconductor module having an external connection terminal (24) and a through substrate (40) having a terminal hole (41) formed through a main surface, the other end portion of the external connection terminal (24) being fitted into the terminal hole (41) from an entrance (41a) to an exit (41b) of the terminal hole (41) and being fixed by solder (50), the through substrate (40) being electrically connected to the external connection terminal (24). Furthermore, a locking portion as a step difference (42) that locks the other end portion against insertion into the terminal hole (41) is formed in the terminal hole (41). The other end portion of the external connection terminal (24) is locked by the locking portion against insertion into the terminal hole, and the other end portion of the external connection terminal (24) remains in the terminal hole. Therefore, the external connection terminal (24) is joined to the through substrate in a manner that does not protrude from the through substrate.

Description

Technical Field

[0001] This invention relates to a semiconductor device and a method for manufacturing a semiconductor device. Background Technology

[0002] A semiconductor module includes semiconductor chips such as IGBTs (Insulated Gate Bipolar Transistors) and power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and has multiple pin-shaped external connection terminals extending vertically from its front side. These external connection terminals are electrically connected to the control electrodes and main electrodes of the semiconductor chips inside the semiconductor module. A semiconductor device comprises multiple such semiconductor modules and includes a printed circuit board or busbar mounted on the external connection terminals of each semiconductor module. Thus, the semiconductor device functions as, for example, a power conversion device.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-142124

[0006] Patent Document 2: Japanese Patent Application Publication No. 2017-163016 Summary of the Invention

[0007] Technical issues

[0008] In the aforementioned semiconductor device, external connection terminals protrude from the printed circuit board. That is, space is required directly above the front side of the semiconductor device to allow these protruding external connection terminals. Therefore, it is impossible to place insulating sheets or similar components directly above the front side of the semiconductor device. Furthermore, if other devices are placed directly above the front side of the semiconductor device, space must be made for the protruding portion of the external connection terminals. Moreover, because the semiconductor device requires such space, the freedom of its placement is sometimes limited by its location.

[0009] The present invention was made in view of this situation, and its purpose is to provide a semiconductor device that is not spatially restricted on the front side and a method for manufacturing the semiconductor device.

[0010] Technical solution

[0011] According to one aspect of the present invention, a semiconductor device is provided, comprising a semiconductor module and a first conductive substrate. The semiconductor module has a semiconductor element and a first external connection terminal. A first end of the first external connection terminal is electrically connected to the semiconductor element, and a first other end of the first external connection terminal extends from the semiconductor element. The first conductive substrate has a first terminal hole formed through a main surface. The first other end is fitted into the first terminal hole from a first inlet to a first outlet and is fixed with solder. The first conductive substrate is electrically connected to the first external connection terminal. A first locking portion, which is a step, a tapered portion, or a protrusion, is formed on at least one of the first terminal hole and the first other end. Insertion of the first other end into the first terminal hole is locked by the first locking portion, thereby keeping the first other end in the first terminal hole.

[0012] In addition, according to one aspect of the present invention, a method for manufacturing the above-described semiconductor device is provided.

[0013] Invention Effects

[0014] According to the publicly available technology, the top of the front is not limited by space, which can effectively utilize the top of the front, or can achieve miniaturization. Attached Figure Description

[0015] Figure 1 This is a three-dimensional view (one of the views) showing the appearance of a semiconductor module.

[0016] Figure 2 This is a three-dimensional view showing the appearance of a semiconductor module (Part Two).

[0017] Figure 3 This is a cross-sectional view of a semiconductor module.

[0018] Figure 4 This is a diagram illustrating an example of a semiconductor device according to the first embodiment.

[0019] Figure 5 is one of the diagrams illustrating the engagement of an external connection terminal relative to a conductive substrate in the first embodiment.

[0020] Figure 6 This is a second diagram illustrating the external connection terminal bonded to the conductive substrate in the first embodiment.

[0021] Figure 7 This is Figure (3) illustrating the external connection terminal bonded to the conductive substrate relative to the first embodiment.

[0022] Figure 8 This is Figure (four) illustrating the external connection terminal bonded relative to the conductive substrate in the first embodiment.

[0023] Figure 9 This is Figure (5) illustrating the external connection terminal bonded relative to the conductive substrate in the first embodiment.

[0024] Figure 10 This is Figure (six) illustrating the external connection terminal bonded relative to the conductive substrate in the first embodiment.

[0025] Figure 11 This is Figure 7, used to illustrate the first embodiment of bonding external connection terminals relative to the conductive substrate.

[0026] Figure 12 This is one of the figures used to illustrate the method of engaging an external connection terminal relative to a conductive substrate in the first embodiment.

[0027] Figure 13 This is Figure (Part 2) illustrating the method of engaging external connection terminals relative to a conductive substrate in the first embodiment.

[0028] Figure 14 This is Figure (3) illustrating the method of engaging external connection terminals relative to a conductive substrate in the first embodiment.

[0029] Figure 15 This is one of the figures illustrating an example of a semiconductor device according to the first embodiment.

[0030] Figure 16 This is a diagram (two) showing an example of a semiconductor device according to the first embodiment.

[0031] Figure 17 This is a diagram illustrating the bonding of external connection terminals relative to the printed circuit board in the second embodiment.

[0032] Figure 18 This is one of the diagrams used to illustrate a plurality of semiconductor modules with a busbar mounted in the third embodiment.

[0033] Figure 19 This is one of the diagrams used to illustrate the external connection terminal relative to the busbar in the third embodiment.

[0034] Figure 20 This is Figure (Part Two) illustrating a plurality of semiconductor modules with a busbar mounted in the third embodiment.

[0035] Figure 21 This is a diagram (two) illustrating the external connection terminal connected to the busbar in the third embodiment.

[0036] Figure 22 This is a diagram (3) illustrating the external connection terminal relative to the busbar in the third embodiment.

[0037] Figure 23 This is a cross-sectional view of the semiconductor module according to the fourth embodiment.

[0038] Symbol Explanation

[0039] 1, 1a: Semiconductor device

[0040] 10, 10a: Semiconductor modules

[0041] 11A: First insulating substrate

[0042] 11B: Second insulating substrate

[0043] 12a: First circuit board

[0044] 12b: Second circuit board

[0045] 13: Metal plate

[0046] 14: First semiconductor element

[0047] 15: Second semiconductor element

[0048] 16: Third semiconductor element

[0049] 17: Fourth Semiconductor Component

[0050] 18: Printed Circuit Board

[0051] 19, 20: Conductive pillars

[0052] 21a, 21b, 22a, 22b, 23, 24, 25: External connection terminals

[0053] 21aa, 22aa, 23a, 24a, 24c, 24f: Protrusions

[0054] 21ab, 22ab, 24b: Peripheral parts

[0055] 21ae, 22ae, 23e, 24e, 42, 82c: Step difference

[0056] 24d, 43: Conical part

[0057] 26: Spacer

[0058] 30: Packaging Department

[0059] 40, 40a, 40b, 40c, 40d, 61, 62, 63, 71, 72: Conductive substrate

[0060] 41: Terminal hole

[0061] 41a, 82a: Entrance

[0062] 41b, 82b: Exports

[0063] 50, 51: Solder

[0064] 60: Busbar

[0065] 60a: First page

[0066] 60b: Second page

[0067] 61a: Open at the top

[0068] 62a: Lower opening

[0069] 64: Insulating paper

[0070] 70: Cooler

[0071] 71a: Open at the top

[0072] 72a: Lower opening

[0073] 74: Insulating substrate

[0074] 75, 76: Capacitors

[0075] 80: Printed Circuit Board

[0076] 81a: Insulation layer

[0077] 81b, 81c: Conductive layers

[0078] 81d, 81e: Protective layer

[0079] 82: Through hole

[0080] 83: Coating Detailed Implementation

[0081] The embodiments will now be described with reference to the accompanying drawings. It should be noted that in the following description, "front" and "top surface" refer to the... Figure 1 The upper side of the semiconductor module 10. Similarly, "upper" indicates that... Figure 1 In the semiconductor module 10, the upper side is the orientation. "Back side" and "lower surface" indicate the orientation in... Figure 1 The downward-facing surface of the semiconductor module 10. Similarly, "down" refers to the side facing downwards. Figure 1 In the semiconductor module 10, the direction is shown on the lower side. The same orientation is indicated in other figures as needed. The terms "front," "upper surface," "upper," "back," "lower surface," "lower," and "side" are merely expressions to facilitate the determination of relative positional relationships and do not limit the technical concept of the invention. For example, "upper" and "lower" do not necessarily refer to directions perpendicular to the ground. That is, the directions of "upper" and "lower" are not limited to the direction of gravity.

[0082] [First Implementation Method]

[0083] use Figures 1-3 An example of a semiconductor module used in the first embodiment will be described. Figure 1 and Figure 2 It is a 3D view showing the appearance of a semiconductor module. Figure 3 This is a cross-sectional view of a semiconductor module. It should be noted that... Figure 3 Indicates in Figure 1 and Figure 2 A cross-sectional view of the semiconductor module 10 along the center line passing through the center of the semiconductor module 10 in the length direction.

[0084] The semiconductor module 10 includes: a first semiconductor element 14 to a fourth semiconductor element 17 (described later), a package 30 for encapsulating the first semiconductor element 14 to the fourth semiconductor element 17, conductive posts 19 and 20 electrically connected to the first semiconductor element 14 to the fourth semiconductor element 17 within the package 30, and external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25. That is, as... Figure 3 As shown, the semiconductor module 10 internally includes first semiconductor elements 14 to fourth semiconductor elements 17, a first circuit board 12a, a second circuit board 12b, and a third circuit board (not shown). Furthermore, the semiconductor module 10 also includes a printed circuit board 18, conductive pillars 19 and 20, and external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25. This semiconductor module 10 is encapsulated by a generally cuboid-shaped package 30. Additionally, on the front side of the package 30, the external connection terminals 21a, 22a, 23, 24, and 25, and the external connection terminals 21b, 22b, 23, 24, and 25 are arranged in linearly symmetrical positions about a longitudinal centerline.

[0085] One end of each of the external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 extends from the front of the package portion 30 into the package portion 30 of the semiconductor module 10, while the other end extends perpendicularly from the front of the package portion 30. Furthermore, the other ends are arranged in two rows along the length direction. External connection terminals 21a, 21b, 22a, and 22b are control terminals for controlling the switching of the semiconductor module 10. External connection terminals 21a and 21b are gate terminals (G1 terminal and G2 terminal) electrically connected to the gate electrodes of the first semiconductor element 14 and the third semiconductor element 16 (described later). External connection terminals 22a and 22b are Kelvin emitter terminals (E1s terminal and E2s terminal) electrically connected to the emitters of the first semiconductor element 14 and the third semiconductor element 16 (described later). Additionally, external connection terminals 23, 24, and 25 are main terminals for main current input and output. External connection terminal 23 is an input terminal (P terminal) electrically connected to the collector of the first semiconductor element 14 (described later) and allowing input current to flow on the positive side. External connection terminal 24 is an input terminal (N terminal) electrically connected to the emitter of the third semiconductor element 16 (described later) and allowing input current to flow on the negative side. External connection terminal 25 is an output terminal (O terminal) electrically connected to the emitter of the first semiconductor element 14 and the collector of the third semiconductor element 16 (described later) and allowing output current to flow. Two external connection terminals 23, 24, and 25 are arranged side by side, parallel to the short side of the semiconductor module 10. It should be noted that external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 are cylindrical or prismatic. From the viewpoint of electrical connection, the shape of external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 is preferably the same as the shape of the terminal hole 41 of the conductive substrate 40 (described later). Furthermore, from an ease of installation perspective, the external connection terminals 21a, 21b, 22a, 22b, 23, 24, 25 and the terminal holes 41 of the conductive substrate 40 are preferably cylindrical. The external connection terminals 21a, 21b, 22a, 22b, 23, 24, 25 are made of a material with excellent conductivity. Such materials include, for example, silver, copper, nickel, or alloys containing at least one of these.

[0086] The semiconductor module 10 includes a first insulating substrate 11A and a second insulating substrate 11B arranged side-by-side in a horizontal direction. The first insulating substrate 11A and the second insulating substrate 11B are made of ceramics such as alumina, aluminum nitride, and silicon nitride, which have good thermal conductivity. A first circuit board 12a is disposed on the upper surface of the first insulating substrate 11A, and a metal plate 13 of the same thickness is disposed on the back side. Similarly, a second circuit board 12b is disposed on the upper surface of the second insulating substrate 11B, and a metal plate 13 of the same thickness is disposed on the back side. Furthermore, a plurality of third circuit boards are disposed on the upper surfaces of the first insulating substrate 11A and the second insulating substrate 11B. The thickness of the first circuit board 12a, the second circuit board 12b, and the third circuit boards is, for example, 0.5 mm or more and 1.5 mm or less. The first circuit board 12a and the second circuit board 12b are made of a material with excellent electrical conductivity. Such materials include, for example, silver, copper, nickel, or an alloy containing at least one of these. To improve corrosion resistance, the surfaces of the first circuit board 12a and the second circuit board 12b can be plated with materials such as nickel. Besides nickel, this material also includes nickel-phosphorus alloys, nickel-boron alloys, etc. Metal plate 13 is made of metals with excellent thermal conductivity, such as aluminum, iron, silver, copper, or alloys containing at least one of these. Additionally, such as... Figure 2 As shown, the metal plate 13 is exposed from the back of the encapsulation portion 30. Such a first insulating substrate 11A and a second insulating substrate 11B can be, for example, a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazed) substrate.

[0087] In this way, a cooler (not shown) can be mounted on the back of the semiconductor module 10 exposed from the back of the metal plate 13 to improve heat dissipation. This cooler can be made of materials with excellent thermal conductivity, such as aluminum, iron, silver, copper, or an alloy containing at least one of these. Alternatively, a heat sink or a heat sink composed of multiple heat sinks, or a water-based cooling device can be used as the cooler. Furthermore, the substrate can be integrally formed with such a cooler. In this case, the substrate is made of materials with excellent thermal conductivity, such as aluminum, iron, silver, copper, or an alloy containing at least one of these. Moreover, to improve corrosion resistance, materials such as nickel can be formed on the surface of the heat sink integrated with the cooler, for example, through a plating process. Besides nickel, other materials include nickel-phosphorus alloys, nickel-boron alloys, etc.

[0088] A first semiconductor element 14 and a second semiconductor element 15 are mounted on a first circuit board 12a via solder (not shown). A third semiconductor element 16 and a fourth semiconductor element 17 are mounted on a second circuit board 12b via solder (not shown). The first semiconductor element 14 to the fourth semiconductor element 17 are respectively mounted on a first insulating substrate 11A and a second insulating substrate 11B. This is because when the first insulating substrate 11A and the second insulating substrate 11B are integrally formed, the deformation of the insulating substrate due to thermal stress increases, which may lead to cracking of the insulating substrate and resin, or peeling of the circuit board and resin from the insulating substrate. On the other hand, in this embodiment, by dividing the insulating substrate into two pieces, reliability can be improved.

[0089] The first semiconductor element 14 and the third semiconductor element 16 are switching elements, including semiconductor elements such as IGBTs and power MOSFETs made of silicon or silicon carbide. For example, the first semiconductor element 14 and the third semiconductor element 16 have a collector (or drain) as the main electrode on the back side and a gate electrode and an emitter (or source) as the main electrode on the front side. The second semiconductor element 15 and the fourth semiconductor element 17 are diode elements used as FWD (Free Wheeling Diode), including SBD (Schottky Barrier Diode) and PiN (P-intrinsic-N Diode) diodes. The second semiconductor element 15 and the fourth semiconductor element 17 have a cathode as the main electrode on the back side and an anode as the main electrode on the front side. When made of silicon carbide, the thickness of the first semiconductor element 14 to the fourth semiconductor element 17 is, for example, 180 μm or more and 220 μm or less, with an average thickness of about 200 μm. When made of silicon, the thickness of such first semiconductor element 14 to fourth semiconductor element 17 is, for example, 60 μm or more and 200 μm or less, with an average of about 120 μm.

[0090] Above the first circuit board 12a and the second circuit board 12b, a printed circuit board 18 is disposed opposite to the first circuit board 12a and the second circuit board 12b, separated by a predetermined interval. The printed circuit board 18 has a metal layer with wiring patterns on its upper surface and a metal layer with wiring patterns on its lower surface. It should be noted that illustrations of these metal layers are omitted.

[0091] The predetermined metal layer of the printed circuit board 18 is electrically connected to the first circuit board 12a, the second circuit board 12b, or the third circuit board via conductive posts 19. Additionally, the predetermined metal layer of the printed circuit board 18 is electrically connected to the first semiconductor element 14 to the fourth semiconductor element 17 via conductive posts 20. Furthermore, external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 are electrically and mechanically connected to the first circuit board 12a and the third circuit board. For the connection of the above components, conductive bonding materials such as solder or metal sintering materials can be used.

[0092] The first circuit board 12a, the second circuit board 12b, the third circuit board, the first semiconductor element 14 to the fourth semiconductor element 17, the conductive pillars 19 and 20, and the printed circuit board 18 are encapsulated by the encapsulation section 30. The encapsulation section 30 includes a thermosetting resin such as epoxy resin, phenolic resin, or maleimide resin, and a filler material contained in the thermosetting resin. As an example of such an encapsulation section 30, it includes epoxy resin and a filler material such as silica, alumina, boron nitride, or aluminum nitride used as filler in the epoxy resin. Then, a process is formed as follows... Figure 1 and Figure 2 The semiconductor module 10 shown.

[0093] Such a semiconductor module 10 is electrically connected as follows: The collector of the first semiconductor element 14 is connected to an external connection terminal 23 (P terminal) via a first circuit board 12a. The emitter of the first semiconductor element 14 is first connected to the metal layer of the printed circuit board 18 via a conductive post 20, and then connected to an external connection terminal 25 (O terminal) via a conductive post 19 and a second circuit board 12b. The gate electrode of the first semiconductor element 14 is first connected to the metal layer of the printed circuit board 18 via a conductive post 20, and then connected to an external connection terminal 21a (G1 terminal) via a conductive post 19 and a third circuit board. The auxiliary emitter of the first semiconductor element 14 is first connected to the metal layer of the printed circuit board 18 via a conductive post 20, and then connected to an external connection terminal 22a (E1s terminal) via a conductive post 19 and a third circuit board.

[0094] The cathode electrode of the second semiconductor element 15 is connected to the external connection terminal 23 (P terminal) via the first circuit board 12a. The anode electrode of the second semiconductor element 15 is first connected to the metal layer of the printed circuit board 18 via the conductive post 20, and then connected to the external connection terminal 25 (O terminal) via the conductive post 19 and the second circuit board 12b.

[0095] The collector of the third semiconductor element 16 is connected to the external connection terminal 25 (O terminal) via the second circuit board 12b. The emitter of the third semiconductor element 16 is first connected to the metal layer of the printed circuit board 18 via the conductive post 20, and then connected to the external connection terminal 24 (N terminal) via the conductive post 19 and the third circuit board. The gate electrode of the third semiconductor element 16 is first connected to the metal layer of the printed circuit board 18 via the conductive post 20, and then connected to the external connection terminal 21b (G2 terminal) via the conductive post 19 and the third circuit board. The auxiliary emitter of the third semiconductor element 16 is first connected to the metal layer of the printed circuit board 18 via the conductive post 20, and then connected to the external connection terminal 22b (E2s terminal) via the conductive post 19 and the third circuit board.

[0096] The cathode electrode of the fourth semiconductor element 17 is connected to the external connection terminal 25 (O terminal) via the second circuit board 12b. The anode electrode of the fourth semiconductor element 17 is first connected to the metal layer of the printed circuit board 18 via the conductive post 20, and then connected to the external connection terminal 24 (N terminal) via the conductive post 19 and the third circuit board.

[0097] Next, use Figure 4 A semiconductor device comprising a semiconductor module 10 having a plurality of external connection terminals 21a, 21b, 22a, 22b, 23, 24, 25 will be described. Figure 4 This is a diagram illustrating an example of the semiconductor device according to the first embodiment. It should be noted that... Figure 4 (A) is a top view of semiconductor device 1. Figure 4 (B) is Figure 4 A cross-sectional view of semiconductor device 1 at the dashed line YY in (A). The connection between external connection terminals 21a, 23, 24, 25 and conductive substrates 40a to 40d is simplified. Semiconductor device 1 includes three semiconductor modules 10 constituting a three-phase bridge inverter circuit and conductive substrates 40a to 40d. It should be noted that conductive substrates 40a to 40d are sometimes described as conductive substrate 40 without distinguishing between them.

[0098] The conductive substrate 40 is a board containing conductors. For example, it can be a busbar or a printed circuit board. The conductive substrate 40 can electrically connect external devices such as drive circuits, power supplies, and output devices to the external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 of the semiconductor module 10, enabling control of the semiconductor module 10 and input / output voltage to the semiconductor module 10. The conductive substrate 40 is electrically connected to the external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 of the semiconductor module 10 arranged in two rows. Specifically, the conductive substrate 40a is a printed circuit board. For this conductive substrate 40a, external connection terminals 21a, 21b, 22a, and 22b, which serve as control terminals, are electrically connected. The conductive substrate 40b is a busbar. For this conductive substrate 40b, external connection terminal 23, which serves as a main terminal, is electrically connected. The conductive substrate 40c is a busbar. For such a conductive substrate 40c, an external connection terminal 24 serving as a main terminal is electrically connected. Furthermore, the conductive substrate 40d is a busbar. For such a conductive substrate 40d, an external connection terminal 25 serving as a main terminal is electrically connected. In this case, the other ends of the external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 do not extend through the conductive substrate 40 but are electrically connected to it. Furthermore, the semiconductor device 1 is not limited to including three semiconductor modules 10. The semiconductor device 1 may include at least one semiconductor module 10 and multiple conductive substrates 40. For example, multiple semiconductor modules 10 may be arranged with their long sides facing each other, parallel to the short side direction.

[0099] Next, use Figure 5~ Figure 11 The external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25 are described in relation to the conductive substrate 40. (Figure 5-) Figure 11 This is a diagram illustrating the external connection terminal bonded relative to the conductive substrate in the first embodiment. It should be noted that Figures 5-5... Figure 10 They represent Figure 4 A cross-sectional view of the dashed line XX in (A). Figure 5A , Figure 5B , Figure 6 (A) Figure 6 (B) Figure 7 (A) Figure 7 (B) Figures 8-10 , Figure 11 (A) Figure 11(B) respectively represent examples of external connection terminals being engaged with the conductive substrate 40. Furthermore, the case of external connection terminal 24 among the external connection terminals will be described below. Other external connection terminals can also be engaged with the conductive substrate 40 in the same way. It should be noted that in this embodiment, the conductive substrate 40 is used as the generatrix. Furthermore, a locking portion, which is a step, a tapered portion, or a protrusion, is formed at least on either the terminal hole of the conductive substrate 40 or the other end of the external connection terminal 24. The insertion of the other end of the external connection terminal 24 into the terminal hole is stopped by the locking portion, and it remains inside the terminal hole without penetrating the conductive substrate 40. These will be described in detail below.

[0100] First, such as Figure 5A As shown, a terminal hole 41 is formed on the conductive substrate 40. The terminal hole 41 is formed such that it extends from an inlet 41a on the back side of the conductive substrate 40 to an outlet 41b on the opposite side of the back side. It should be noted that the shape of the terminal hole 41 in plan view corresponds to the shape of the external connection terminal 24 and is circular, square, or the like. In addition, a step difference 42 is formed between the inlet 41a and the outlet 41b. This step difference 42 is formed in a way that surrounds the inner periphery of the terminal hole 41. Therefore, the area of ​​the inlet 41a is larger than the area of ​​the outlet 41b. It should be noted that the step difference 42 can be formed locally along the inner periphery of the terminal hole 41. The other end of the external connection terminal 24 is engaged in such a terminal hole 41. The other end of the external connection terminal 24 is cylindrical and has no protrusions or step differences formed on its side peripheral surface. At this time, the peripheral portion of the front end face of the other end of the external connection terminal 24 abuts against the step difference 42 of the terminal hole 41 and is fixed by the solder 50 in the gap between the external connection terminal 24 and the terminal hole 41. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 40 without penetrating the conductive substrate 40.

[0101] In addition, such as Figure 5BAs shown, in the conductive substrate 40, the terminal hole 41 is formed as an inlet 41a on the back side extending through an outlet 41b on the opposite side of the back side. It should be noted that the shape of the terminal hole 41 in plan view corresponds to the shape of the external connection terminal 24 and is circular, square, or the like. Furthermore, a protrusion 24c is formed at a predetermined position protruding into the terminal hole 41 from the inlet 41a on the inner peripheral surface of the terminal hole 41 as a locking portion. The protrusion 24c is formed between the recesses. A step difference 42 formed by the protrusion 24c on the inner peripheral surface of the terminal hole 41 is formed to surround the inner periphery of the terminal hole 41. Alternatively, it may be formed on at least a portion of the inner peripheral surface. The other end of the external connection terminal 24 is engaged in such a terminal hole 41. The other end of the external connection terminal 24 is cylindrical without protrusions or step differences formed on its side peripheral surface. At this time, the peripheral portion of the front end face of the other end of the external connection terminal 24 abuts against the protrusion 24c and is fixed by the solder 50 in the gap between the external connection terminal 24 and the terminal hole 41. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 40 without penetrating the conductive substrate 40.

[0102] In addition, such as Figure 6 As shown in (A), in the conductive substrate 40, the terminal hole 41 is formed to extend from the inlet 41a on the back side to the outlet 41b on the opposite side of the back side. At this time, the terminal hole 41 has no protrusion or step on its inner peripheral surface, and is a hollow column. The inlet 41a and outlet 41b of the terminal hole 41 are opposite each other, having the same shape and area. On the other hand, a protrusion 24a is formed on the front end face of the external connection terminal 24, and a step 24e is formed on the peripheral portion 24b surrounding the protrusion 24a. The protrusion 24a of the external connection terminal 24 is fitted into the terminal hole 41 by solder 50, and the step 24e formed on the peripheral portion 24b of the external connection terminal 24 abuts against the edge of the inlet 41a of the terminal hole 41 of the conductive substrate 40. Thus, the external connection terminal 24 is joined to the terminal hole 41 of the conductive substrate 40. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 40 without penetrating the conductive substrate 40. Furthermore, by forming the protrusion 24a on the front end surface of the external connection terminal 24, the contact area between the external connection terminal 24 and the solder 50 is increased using the solder 50, thus making the external connection terminal 24 more... Figure 5A The connection to the terminal hole 41 is more secure.

[0103] In addition, such as Figure 6As shown in (B), the terminal hole 41 of the conductive substrate 40 is a hollow column with no protrusions or stepped differences on its inner peripheral surface. On the external connection terminal 24, a protrusion 24c is formed on its side peripheral surface at a predetermined distance from the front end face of the other end. The protrusion 24c can be formed to surround the side peripheral surface of the external connection terminal 24, or it can be formed at least a portion along the circumference of the side peripheral surface. The protrusion 24c of the external connection terminal 24 is pressed by a pressing tool to form a recess in the upper and lower parts of a predetermined area (relative to the length direction of the external connection terminal 24). Thus, by raising the position sandwiched by the recess, a convex portion is formed, thereby providing a protrusion 24c between the recesses. In this way, the protrusion 24c can be pre-formed on the side peripheral surface of the external connection terminal 24, or it can be separately formed. If such an external connection terminal 24 is inserted from the inlet 41a into the terminal hole 41 of the conductive substrate 40, the protrusion 24c abuts against the edge of the inlet 41a of the terminal hole 41. Thus, the external connection terminal 24 is secured by solder 50 in the gap between it and the terminal hole 41. The front end face of the other end is located between the inlet 41a and the outlet 41b of the terminal hole 41. Therefore, the external connection terminal 24 is electrically connected to the conductive substrate 40 without penetrating through it.

[0104] In addition, such as Figure 7 As shown in (A), in Figure 5A In this case, a protrusion 24a is integrally formed on the inner side of the peripheral portion 24b of the front end face of the external connection terminal 24. This protrusion 24a is the size and shape of the area that can be received from the step difference 42 of the terminal hole 41 to the outlet 41b. The protrusion 24a of the external connection terminal 24 is received from the step difference 42 of the terminal hole 41 to the outlet 41b relative to the terminal hole 41. Furthermore, the step difference 24e of the peripheral portion 24b of the external connection terminal 24 abuts against the step difference 42 of the terminal hole 41 and is fixed by the solder 50 in the gap between the external connection terminal 24 and the terminal hole 41. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically bonded to the conductive substrate 40 without penetrating the conductive substrate 40. By forming such a protrusion 24a on the front end face of the external connection terminal 24, the contact area between the other end of the external connection terminal 24 and the solder 50 is increased by the solder 50. Therefore, external connection terminal 24 is more Figure 5A The connection to the terminal hole 41 is more secure.

[0105] In addition, such as Figure 7 As shown in (B), in Figure 5AIn this case, a spacer 26 is further disposed on the front end face of the external connection terminal 24. The spacer 26 is made of the same material as the external connection terminal 24. Furthermore, the spacer 26 is the same size and shape as the area where it can be received from the step difference 42 of the terminal hole 41 into the outlet 41b, and is cylindrical or prismatic in shape. Therefore, the external connection terminal 24 and the spacer 26 can be electrically bonded to the conductive substrate 40 without penetrating it. By disposing such a spacer 26 on the front end face of the external connection terminal 24, the other end of the external connection terminal 24 is fixed together with the spacer 26 using solder 50, thus making the external connection terminal 24 more... Figure 5A The connection to the terminal hole 41 is more secure.

[0106] Next, as Figure 8 As shown, the conductive substrate 40 has a tapered portion 43 formed on the inner peripheral surface of the terminal hole 41. If the other end of the external connection terminal 24 is fitted into such a terminal hole 41, the outer edge of the front end face of the other end abuts against the tapered portion 43. Thus, the external connection terminal 24 is fixed by the terminal hole 41 and the solder 50. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 40 without penetrating through it.

[0107] In addition, such as Figure 9 As shown, in the conductive substrate 40, the terminal hole 41 is formed to extend from the inlet 41a on the back side to the outlet 41b on the opposite side of the back side. On the other hand, a tapered portion 24d is formed at the other end of the external connection terminal 24. If such an external connection terminal 24 is inserted from the inlet 41a into the terminal hole 41 of the conductive substrate 40, the tapered portion 24d abuts against the edge of the inlet 41a of the terminal hole 41. Thus, the external connection terminal 24 is fixed by the solder 50 in the gap between it and the terminal hole 41. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 40 without penetrating through it.

[0108] Next, as Figure 10As shown, the external connection terminal 24 has a tapered portion 24d formed at its other end. Furthermore, an inclined surface corresponding to this tapered portion 24d is also formed on the inner circumferential surface of the terminal hole 41 of the conductive substrate 40. If such an external connection terminal 24 is inserted into the terminal hole 41 of the conductive substrate 40 from the inlet 41a, the tapered portion 24d abuts against the inclined surface of the terminal hole 41. Thus, the external connection terminal 24 is fixed by the solder 50 in the gap between it and the terminal hole 41. The other end of the external connection terminal 24 remains in the terminal hole 41. Therefore, the external connection terminal 24 can be electrically bonded to the conductive substrate 40 without penetrating through it. In this way, by forming a tapered portion 24d on the external connection terminal 24 and an inclined surface on the terminal hole 41, the external connection terminal 24 is made more... Figure 8 , Figure 9 The connection to the terminal hole 41 is more secure.

[0109] Next, the external connection terminal 24 does not have a protrusion or step difference on its side peripheral surface; it is columnar. Additionally, as... Figure 11 As shown in (A), the area of ​​its front end face is larger than the area of ​​the inlet 41a. Furthermore, the external connection terminal 24 has a protrusion 24f formed on the periphery of its front end face at the other end. It should be noted that the protrusion 24f may be formed along the periphery of the front end face, or it may be formed on a portion of the periphery. In the conductive substrate 40, the terminal hole 41 is formed to extend from the inlet 41a on the back side to the outlet 41b on the opposite side of the back side. At this time, the terminal hole 41 does not have a protrusion or stepped difference on its inner peripheral surface; it is a hollow columnar structure. The inlet 41a and outlet 41b of the terminal hole 41 are opposite each other, having the same shape and the same area. Furthermore, the conductive substrate 40 has a recess formed at the edge of the inlet 41a. It should be noted that the recess may be formed opposite to the protrusion 24f of the external connection terminal 24. The recess may be formed along the edge of the protrusion 24f, or it may be formed on a portion of the periphery. At this time, since the area of ​​the front end face of the other end of the external connection terminal 24 is larger than the area of ​​the inlet 41a, it covers the inlet 41a, and the peripheral portion of the front end face of the other end of the external connection terminal 24 abuts against the edge of the inlet 41a of the terminal hole 41 of the conductive substrate 40. Furthermore, the solder 50 of the terminal hole 41 of the conductive substrate 40 fixes the front end face of the other end. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 40 without penetrating it. Also, the protrusion 24f is embedded into the recess of the edge of the inlet 41a, causing the other end to engage with the terminal hole 41. Therefore, the external connection terminal 24 can be connected without positional displacement from a predetermined position on the conductive substrate 40. It should be noted that the protrusion 24f may be formed on the peripheral portion of the inlet 41a of the terminal hole 41 of the conductive substrate 40. In this case, the external connection terminal 24 has a recess formed on the peripheral portion of the front end face of the other end.

[0110] In addition, such as Figure 11 As shown in (B), in Figure 11 In case (A), with Figure 7 Similarly, (B) a spacer 26 is further disposed on the front end face of the external connection terminal 24. This spacer 26 is made of the same material as the external connection terminal 24. Furthermore, the spacer 26 is the same cylindrical or prismatic shape as the external connection terminal 24, and is sized and shaped to be received into the area of ​​the outlet 41b from the step difference 42 of the terminal hole 41. Therefore, the external connection terminal 24 and the spacer 26 can be electrically bonded to the conductive substrate 40 without penetrating it. By disposing such a spacer 26 on the front end face of the external connection terminal 24, the other end of the external connection terminal 24 is fixed together with the spacer 26 using solder 50, thus making the external connection terminal 24 more... Figure 11 In case (A), the connection to terminal hole 41 is more secure.

[0111] Thus, the semiconductor device 1 described above includes a semiconductor module having a first semiconductor element 14 to a fourth semiconductor element 17, and an external connection terminal 24 having one end electrically connected to the first semiconductor element 14 to the fourth semiconductor element 17 and the other end extending from the first semiconductor element 14 to the fourth semiconductor element 17. Furthermore, it includes a conductive substrate 40 having a terminal hole 41 formed through a main surface, through which the other end of the external connection terminal 24 is fitted into the terminal hole 41 from the inlet 41a to the outlet 41b and fixed by solder 50, and electrically connected to the external connection terminal 24. Additionally, at least one of the terminal hole 41 and the other end has a locking portion, which is a step, a tapered portion, or a protrusion, to prevent the other end from being inserted into the terminal hole 41. The other end of the external connection terminal 24 is engaged by the locking portion to remain in the terminal hole 41. Therefore, it can be bonded to the conductive substrate 40 in a manner that does not protrude from the conductive substrate 40. Thus, space limitations on the conductive substrate 40 are suppressed. Consequently, the semiconductor device 1 can be made extremely thin, enabling miniaturization.

[0112] Next, use Figures 12-14 The method of engaging the external connection terminal 24 with the terminal hole 41 relative to the conductive substrate 40 will be described. Figures 12-14 This is a diagram illustrating the method of bonding external connection terminals relative to a conductive substrate according to the first embodiment. It should be noted that, hereinafter, Figures 5-10... Figure 11 In and Figure 5A The relevant joining methods will be explained. However, Figure 5A In other cases, it can also be joined in the same way as below.

[0113] First, a semiconductor module 10 and a conductive substrate 40 are prepared. A terminal hole 41 is formed on the back side (main surface) of the conductive substrate 40 opposite to the semiconductor module 10, extending from an inlet 41a on the back side through an outlet 41b on the front side opposite to the back side. In addition, the terminal hole 41 has a stepped difference 42 from the inlet 41a to the outlet 41b.

[0114] Next, the conductive substrate 40 is configured such that the terminal hole 41 is aligned with the external connection terminal 24, as follows: Figure 12 As shown in (A), solder 51 is arranged around the outlet 41b of the terminal hole 41 of the conductive substrate 40. It should be noted that, in this case, solder 51 can be arranged on the conductive substrate 40 first, and then the conductive substrate 40 can be provided on the external connection terminal 24. Then, the other end of the external connection terminal 24 is inserted through the inlet 41a until it abuts against the step difference 42 of the terminal hole 41 of the conductive substrate 40. At this time, the external connection terminal 24 is fitted into the terminal hole 41 of the conductive substrate 40 without penetrating the conductive substrate 40.

[0115] In this state, for example, the solder 51 is heated and melted using a soldering iron. The molten solder 51 is as follows: Figure 12 As shown in (B), solder 51 flows from the outlet 41b of the conductive substrate 40 into the terminal hole 41 where the external connection terminal 24 is fitted, immersing itself in the gap between the external connection terminal 24 and the terminal hole 41. Solder 50, formed by the solder 51 thus immersing itself in the gap between the external connection terminal 24 and the terminal hole 41 and solidifying, is as follows: Figure 5A As shown, the external connection terminal 24 is engaged in the terminal hole 41.

[0116] Next, use Figure 13 to and Figure 12 Different bonding methods will be described. As described above, after preparing the semiconductor module 10 and the conductive substrate 40, the conductive substrate 40 is arranged such that the terminal hole 41 is aligned with the external connection terminal 24, as shown below. Figure 13 As shown in (A), solder 51 is arranged to block the outlet 41b of the terminal hole 41 of the conductive substrate 40. It should be noted that solder 51 can be arranged first at the outlet 41b of the terminal hole 41 of the conductive substrate 40, and then the conductive substrate 40 is provided on the external connection terminal 24. Then, the other end of the external connection terminal 24 is inserted through the inlet 41a until it abuts against the step difference 42 of the terminal hole 41 of the conductive substrate 40. At this time, the external connection terminal 24 is fitted into the conductive substrate 40 without penetrating it.

[0117] In this state, for example, the solder 51 is heated and melted using a soldering iron. The molten solder 51 is as follows: Figure 13As shown in (B), solder 51 flows from the outlet 41b of the conductive substrate 40 into the terminal hole 41 where the external connection terminal 24 is fitted, immersing itself in the gap between the external connection terminal 24 and the terminal hole 41. Solder 50, formed by the solder 51 thus immersing itself in the gap between the external connection terminal 24 and the terminal hole 41 and solidifying, is as follows: Figure 5A As shown, the external connection terminal 24 is engaged in the terminal hole 41.

[0118] Next, use Figure 14 to and Figure 13 Different bonding methods will be described. As described above, after preparing the semiconductor module 10 and the conductive substrate 40, the conductive substrate 40 is arranged such that the terminal hole 41 is aligned with the external connection terminal 24, as shown below. Figure 14 As shown in (A), the outlet 41b of the terminal hole 41 of the conductive substrate 40 is blocked, and solder 51 is placed on the outlet 41b. It should be noted that, in this case, the solder 51 can be placed first, and then the conductive substrate 40 is placed on the external connection terminal 24. Then, the other end of the external connection terminal 24 is inserted through the inlet 41a until it abuts against the step difference 42 of the terminal hole 41 of the conductive substrate 40. At this time, the external connection terminal 24 is fitted into the conductive substrate 40 without penetrating it.

[0119] In this state, for example, the solder 51 is heated and melted using a soldering iron. The molten solder 51 is then... Figure 14 As shown in (B), the fluid flows from the outlet 41b of the conductive substrate 40 into the terminal hole 41 where the external connection terminal 24 is fitted, immersing itself in the gap between the external connection terminal 24 and the terminal hole 41. Figure 14 In this case, solder 51 not only blocks the outlet 41b of the terminal hole 41 of the conductive substrate 40, but also, because it is also disposed on the outlet 41b, it is in contact with... Figure 13 Compared to the previous case, the amount of solder 51 is increased, while reliably penetrating the entire gap between the external connection terminal 24 and the terminal hole 41. It should be noted that the amount of molten solder 51 penetrating can be adjusted by appropriately adjusting the amount of solder 51 disposed on the outlet 41b. The solder 50 formed by the solidification of the solder 51 thus penetrating the gap between the external connection terminal 24 and the terminal hole 41, as... Figure 5A As shown, the external connection terminal 24 is reliably engaged in the terminal hole 41.

[0120] Next, use Figure 15 and Figure 16 A specific example of a semiconductor device having an external connection terminal connected to a conductive substrate as described above in a non-through manner will be explained. Figure 15 and Figure 16 This is a diagram illustrating an example of a semiconductor device according to the first embodiment.

[0121] like Figure 15 As shown, semiconductor device 1a includes multiple semiconductor modules 10, capacitors 75 and 76, and a cooler 70. The multiple semiconductor modules 10 and capacitors 75 and 76 are electrically connected via bus 60. Furthermore, semiconductor device 1a includes a gate driving unit (not shown). It should be noted that in... Figure 15 To show the side of the semiconductor device 1a, only one semiconductor module 10 is shown.

[0122] Multiple semiconductor modules 10 can be configured on the cooler 70. Such semiconductor modules 10, as described above, include a first semiconductor element 14, a second semiconductor element 15, a third semiconductor element 16, and a fourth semiconductor element 17, functioning as a 2-level inverter. Capacitors 75 and 76 are smoothing capacitors that attenuate the ripple current generated by the switching operation of the first semiconductor element 14 and the third semiconductor element 16. Bus 60 has a first surface 60a and a second surface 60b integrally connected to the first surface 60a at right angles. Capacitors 75 and 76 are electrically connected to the inner side (semiconductor module 10 side) of the first surface 60a, and the other ends of external connection terminals 23, 24, and 25 extending from the semiconductor module 10 are joined to the back side of the second surface 60b. It should be noted that the gate drive unit isolates the input control signal, converts the isolated control signal, such as a PWM (pulse width modulation) signal, into a gate signal that drives the semiconductor module 10, and outputs it.

[0123] Thus, since semiconductor device 1a enables the external connection terminals 23, 24, and 25 of semiconductor module 10 to be as shown in Figure 5 above... Figure 11 By mounting the capacitors in such a way that they do not protrude from the second surface 60b of the busbar 60, the space restriction on the second surface 60b of the busbar 60 is suppressed. Therefore, capacitors 75 and 76 can be mounted close to the second surface 60b relative to the first surface 60a of the busbar 60. Thus, the semiconductor device 1a can... Figure 15 The high degree of thinness in the process enables miniaturization.

[0124] In addition, semiconductor device 1a such Figure 16 As shown, capacitors 75 and 76 can be mounted on the outside of the first surface 60a (opposite to the semiconductor module 10). With capacitors 75 and 76 configured in this way, since the semiconductor device 1a can overcome the space limitations on the second surface 60b of the bus 60, for example, it is possible to... Figure 16 The right side utilizes tools and manual operation for processing, improving operability.

[0125] [Second Implementation]

[0126] In the second embodiment, a printed circuit board is used as a conductive substrate. Figure 17 Please provide an explanation. Figure 17 This diagram illustrates the bonding of external connection terminals relative to the printed circuit board in the second embodiment. It should be noted that... Figure 17 express Figure 4 The cross-sectional view at the single-dotted line ZZ. Among them, Figure 17 (A) Figure 17 (B) indicates different forms of the printed circuit board. Furthermore, in the second embodiment, the cases of external connection terminals 21a and 22a, which serve as control terminals, among the external connection terminals of the semiconductor module 10 will be described.

[0127] The printed circuit board 80 is a double-sided printed circuit board with two conductive layers 81b and 81c formed thereon. The printed circuit board 80 has an insulating layer 81a and conductive layers 81b and 81c disposed on the front and back sides of the insulating layer 81a, respectively, and protective layers 81d and 81e are formed on the surfaces of the conductive layers 81b and 81c. Furthermore, the printed circuit board 80 has a through hole 82 extending from an inlet 82a on the back side to an outlet 82b on the front side.

[0128] like Figure 17 As shown in (A), the through-hole 82 has no protrusions or steps on its inner circumferential surface; it is a hollow column. The inlet 82a and outlet 82b of the through-hole 82 are opposite each other, having the same shape and area. The through-hole 82, which provides for the mating of external connection terminals 21a and 22a, can expose conductive layers 81b and 81c on its inner wall surface. Furthermore, a metal plating 83 can be formed on the inner wall surface of the through-hole 82, covering the conductive layers 81b and 81c exposed from the inner wall surface. Figure 17 In the through-hole 82 on the left side of (A), the conductive layer 81c on the inlet 82a side is exposed from the inner wall surface of the through-hole 82, covered by the coating 83 and electrically connected to the coating 83. The conductive layer 81b on the outlet 82b side is not exposed from the inner wall surface of the through-hole 82 and is electrically insulated from the coating 83. On the other hand, Figure 17 In the through hole 82 on the right side of (A), the conductive layer 81c on the inlet 82a side does not protrude from the inner wall surface of the through hole 82, but is electrically insulated from the coating 83. The conductive layer 81b on the outlet 82b side protrudes from the inner wall surface of the through hole 82, is covered by the coating 83, and is electrically connected to the coating 83.

[0129] The case where such a printed circuit board 80 is mounted on the external connection terminals 21a and 22a of the semiconductor module 10 will be described. The external connection terminals 21a and 22a have protrusions 21aa and 22aa formed inside the stepped differences 21ae and 22ae formed on the periphery of the front end face. The protrusions 21aa and 22aa of the external connection terminals 21a and 22aa are fitted into the through-holes 82 by solder 50, and the stepped differences 21ae and 22ae formed on the periphery of the external connection terminals 21a and 22a abut against the edge of the entrance 82a of the through-hole 82 of the printed circuit board 80. Furthermore, the external connection terminals 21a and 22a can be connected to through-holes that are electrically connected to other conductive layers 81b and 81c, respectively. Figure 17 (A) through holes on the left and right sides. External connection terminals 21a and 22a are connected to the through holes 82 of the printed circuit board 80. The other ends of the external connection terminals 21a and 22a remain in the through holes 82. Therefore, the external connection terminals 21a and 22a can be electrically connected to the conductive layers 81b and 81c without penetrating the printed circuit board 80. In addition, multiple external connection terminals 21a and 22a can be connected to the conductive layers 81c and 81b of a multilayer laminated substrate having multiple conductive layers stacked on it.

[0130] In addition, printed circuit board 80 such Figure 17 As shown in (B), a step difference 82c can be provided between the inlet 82a and the outlet 82b by machining the insulating layer 81a from the entrance 82a side of the through hole 82 to the printed circuit board 80. This step difference 82c is formed to surround the inner periphery of the through hole 82. The other ends of columnar external connection terminals 21a and 22a can be fitted into such a through hole 82. At this time, the peripheral portions 21ab and 22ab of the front end faces of the other ends of the external connection terminals 21a and 22a abut against the step difference 82c and are fixed by solder 50 in the gap between the external connection terminals 21a and 22a and the through hole 82. The other ends of the external connection terminals 21a and 22a remain in the through hole 82. Therefore, the external connection terminals 21a and 22a can be electrically connected to the conductive layers 81b and 81c without penetrating the printed circuit board 80. Furthermore, multiple external connection terminals 21a and 22a can be connected to the conductive layers 81c and 81b of a multilayer laminated substrate having multiple conductive layers. It should be noted that the external connection terminals 21a and 22a... Figure 7 Similarly, in case (A), a protrusion 24a can be formed on the front end face.

[0131] It should be explained that Figure 17 The method of bonding external connection terminals 21a and 22a relative to the printed circuit board 80 shown can be used according to the first embodiment as needed. Figures 12-14The method shown can be adapted to have different shapes at the other ends of the external connection terminals 21a and 22a. Furthermore, the method is not limited to cases where the printed circuit board 80 has two layers; it can also be applied as needed in cases with a single layer or three or more layers. Figures 12-14 The method shown allows for different shapes at the other ends of the external connection terminals 21a and 22a.

[0132] [Third Implementation Method]

[0133] In the third embodiment, using Figures 18-22 The case where two stacked conductive substrates are provided in the semiconductor module 10 will be explained. Figure 18 and Figure 20 This is a diagram illustrating a plurality of semiconductor modules with a busbar mounted in the third embodiment. Figure 19 , Figure 21 and Figure 22 This diagram illustrates the external connection terminals relative to the busbar in the third embodiment. It should be noted that... Figure 19 and Figure 21 and Figure 22 Enlarged display Figure 18 and Figure 20 The area shown by the dashed line.

[0134] like Figure 18 As shown, the semiconductor device includes a conductive substrate 61 corresponding to the positive input substrate, a conductive substrate 62 corresponding to the negative input substrate, a conductive substrate 63 corresponding to the output substrate, and a printed circuit board 80 corresponding to the control substrate. The conductive substrates 61-63 and the printed circuit board 80 are flat. Furthermore, the conductive substrates 61 and 62 are stacked with insulating paper 64 (described later) in between. When the conductive substrates 61-63 are mounted on the external connection terminals 23-25 ​​of the plurality of semiconductor modules 10, the other end (front face) of the external connection terminal 23 on which the conductive substrate 61 is mounted is made higher than the other end (front face) of the external connection terminal 24 on which the conductive substrate 62 is mounted. Additionally, the conductive substrate 61 has an upper opening 61a formed in the region corresponding to the external connection terminal 24. The conductive substrate 62 has a lower opening 62a formed for the external connection terminal 23 to be inserted without contact. Furthermore, the position (height) of the other end (front face) of the external connection terminal 25 is the same as or lower than the other end (front face) of the external connection terminal 23. The position (height) of the conductive substrate 63 is the same as or lower than the conductive substrate 61.

[0135] In addition, such as Figure 19 As shown, terminal holes 41 are formed on the conductive substrates 61 and 62, and external connection terminals 23 and 24 are connected thereto. Figure 6Similarly to case (A), terminal holes 41 are formed on the conductive substrates 61 and 62, respectively, extending from the inlet 41a on the back side to the outlet 41b on the front side opposite to the back side. Furthermore, stepped differences 23e and 24e are formed on the periphery of the front end faces of the other ends of the external connection terminals 23 and 24. At this time, the protrusions 23a and 24a of the external connection terminals 23 and 24 are fitted into the terminal holes 41 by solder 50. Moreover, the stepped differences 23e and 24e formed on the periphery of the front end faces of the other ends of the external connection terminals 23 and 24 abut against the edge of the inlet 41a of the terminal hole 41 and are fixed by the solder 50 in the gap between the external connection terminal 24 and the terminal hole 41. Therefore, the external connection terminal 24 can be electrically connected to the conductive substrate 62 without penetrating it. Similarly, the external connection terminal 23 can also be electrically connected to the conductive substrate 61 without penetrating it. Thus, since the external connection terminals 23 and 24 of the semiconductor module 10 can be mounted without protruding from the conductive substrate 61, the space limitation on the conductive substrate 61 is suppressed. Similarly, the external connection terminal 25 can also be electrically connected to the conductive substrate 63 without penetrating it. Furthermore, at this time, the conductive substrates 61 and 62 hold the insulating paper 64, maintaining the insulation of the conductive substrates 61 and 62. The upper opening 61a and the lower opening 62a are respectively kept at sufficient distances from the external connection terminals 24 and 23. The insulating paper 64 has through holes formed in the area containing all the terminal holes 41. The through holes of the insulating paper 64 are larger than the terminal holes 41. Preferably, the through holes of the insulating paper 64 are larger than the outer diameter of the external connection terminal 25. Additionally, the upper opening 61a and the lower opening 62a are formed in the area containing all the through holes of the insulating paper 64. Preferably, the through holes of the insulating paper 64 are smaller than the upper opening 61a and the lower opening 62a. This ensures sufficient surface distance relative to the external connection terminals 23 and 24.

[0136] On the other hand, in order to mount the external connection terminals 23-25 ​​of the semiconductor module 10 onto the conductive substrates 61-63 in a manner that does not protrude from the conductive substrates 61-63, it can be Figure 20 The situation. In Figure 20 In the illustrated case, when multiple semiconductor modules 10 are mounted with conductive substrates 61 to 63, the front end face of the external connection terminal 23 on which the conductive substrate 61 is mounted and the front end face of the external connection terminal 24 on which the conductive substrate 62 is mounted are at the same height. Furthermore, with... Figure 18Similarly, the conductive substrate 61 has an upper opening 61a in the area corresponding to the external connection terminal 24. The conductive substrate 62 has a lower opening 62a for the external connection terminal 23 to be inserted without contact. Furthermore, the position (height) of the other end (front face) of the external connection terminal 25 is the same as or lower than the other end (front face) of the external connection terminal 24. The position (height) of the conductive substrate 63 is the same as or lower than the conductive substrate 61.

[0137] In addition, such as Figure 21 As shown, terminal holes 41 are formed on the conductive substrates 61 and 62, and external connection terminals 23 and 24 are connected thereto. At this time, the connection between the conductive substrate 61 and the external connection terminal 23 can be... Figure 5A The situation is the same. The terminal hole 41 of the conductive substrate 61 is formed in such a way that it extends from the inlet 41a on the back side to the outlet 41b on the front side opposite to the back side. In addition, a step difference 42 is formed from the inlet 41a to the outlet 41b. At this time, the peripheral portion of the front end face of the other end of the external connection terminal 23 abuts against the step difference 42 and is fixed by the solder 50 in the gap between the external connection terminal 23 and the terminal hole 41. Therefore, the external connection terminal 23 can be electrically connected to the conductive substrate 61 without penetrating the conductive substrate 61. The external connection terminal 25 can also be electrically connected to the conductive substrate 63 without penetrating the conductive substrate 63 with the same configuration. On the other hand, the conductive substrate 62 and the external connection terminal 23 are as follows Figure 21 As shown, the connection is made through the columnar terminal hole 41. Furthermore, the linear external connection terminal 24 is inserted through the terminal hole 41 of the conductive substrate 62, with its front end face positioned closer to the bottom than the front surface of the conductive substrate 61. It should be noted that the external connection terminal 24 is fixed to the terminal hole 41 by solder 50. This allows the external connection terminals 23 and 24 of the semiconductor module 10 to be mounted without protruding from the conductive substrate 61, thus suppressing space limitations on the conductive substrate 61. Additionally, at this time, the conductive substrates 61 and 62 hold the insulating paper 64, maintaining the insulation of the conductive substrates 61 and 62. At this time, the upper opening 61a and the lower opening 62a maintain sufficient distance from the external connection terminals 24 and 23, respectively. This sufficiently ensures the surface distance relative to the external connection terminals 24 and 23.

[0138] In addition, relative to Figure 21 In the variant examples, such as Figure 22As shown, the conductive substrates 61 and 62 are shaped such that the regions containing the positions where external connection terminals 23 and 24 are joined are recessed towards the upper opening 61a and the lower opening 62a. More specifically, the upper conductive substrate 61 is shaped such that the region containing the positions where external connection terminals 23 are joined is recessed towards the lower opening 62a. That is, a recess is formed in the conductive substrate 61 where the terminal hole 41 is recessed towards the lower opening 62a. Similarly, the lower conductive substrate 62 is shaped such that the region containing the positions where external connection terminals 24 are joined is recessed towards the upper opening 61a. That is, a recess is formed in the conductive substrate 62 where the terminal hole 41 is recessed towards the upper opening 61a. Furthermore, the front end face of the external connection terminal 23 on which the conductive substrate 61 is mounted and the front end face of the external connection terminal 24 on which the conductive substrate 62 is mounted are at the same height. At this time, the connection between the conductive substrate 61 and the external connection terminal 23, and the connection between the conductive substrate 62 and the external connection terminal 24, can be achieved... Figure 5A The situation is the same. The terminal holes 41 of the two conductive substrates 61 and 62 are formed such that they extend from the inlet 41a on the back side to the outlet 41b on the opposite side of the back side. In addition, a step difference 42 is formed from the inlet 41a to the outlet 41b. At this time, the peripheral portions of the front end faces of the other ends of the two external connection terminals 23 and 24 abut against the step difference 42, and the external connection terminals 23 and 24 are fixed by the solder 50 in the gap of each terminal hole 41. Therefore, the external connection terminals 23 and 24 can be electrically connected to the conductive substrates 61 and 62 without penetrating the conductive substrates 61 and 62. It should be noted that the recessed portion can be formed on at least one of the conductive substrates 61 and 62. In addition, the front end face of the external connection terminal 23 may be higher than the front end face of the external connection terminal 24.

[0139] in addition, Figures 18-22 The conductive substrates 61-63 and external connection terminals 23, 24, 25 shown can be used as shown in Figures 5-63 of the first embodiment. Figure 11 The structure shown. Additionally... Figures 18-22 The method of connecting external connection terminals 23, 24, and 25 relative to the conductive substrates 61-63 shown can be used with the method of the first embodiment. Figures 12-14 The method shown. Additionally, in Figures 18-22 In the conductive substrates 61-63 shown, for example, when an insulating coating is applied to the surface, the area ratio of the upper opening 61a to the lower opening 62a can be increased. Figures 18-22The situation is minor. It should be noted that the conductive substrate 63, which has the external connection terminal 25 as an O terminal, can be laminated with the conductive substrates 61 and 62 in the same laminated form as the conductive substrates 61 and 62, which have the external connection terminals 23 and 24 as P and N terminals. Furthermore, the connection of the external connection terminal 25 can be the same as that of the external connection terminals 23 and 24. Other suitable wiring shapes and connection configurations can also be used depending on the type of circuit, etc.

[0140] [Fourth Implementation Method]

[0141] In the first to third embodiments, the case where a conductive substrate is mounted on an external connection terminal extending from the semiconductor module 10 is described. In the fourth embodiment, using... Figure 23 The conductive substrate connected within the semiconductor module is described. Figure 23 This is a cross-sectional view of the semiconductor module according to the fourth embodiment. It should be noted that... Figure 23 The components in semiconductor module 10a that are identical to those in the previously described semiconductor module 10 are marked with the same symbols, and their descriptions are omitted. Furthermore, semiconductor module 10a has the same functions as semiconductor module 10.

[0142] Semiconductor module 10a includes first semiconductor elements 14 to fourth semiconductor elements 17, a package portion 30 for encapsulating the first semiconductor elements 14 to fourth semiconductor elements 17, conductive posts 19 and 20 electrically connected to the first semiconductor elements 14 to fourth semiconductor elements 17 and first circuit board 12a and second circuit board 12b within the package portion 30, and external connection terminals 21a, 21b, 22a, 22b, 23, 24, and 25. It should be noted that in... Figure 23 External connection terminals 21b and 22b are omitted from the diagram. The semiconductor module 10a includes a first insulating substrate 11A and a second insulating substrate 11B arranged side-by-side in a horizontal direction. A first circuit board 12a is disposed on the upper surface of the first insulating substrate 11A, and a metal plate 13 of the same thickness is disposed on its back side. Similarly, a second circuit board 12b is disposed on the upper surface of the second insulating substrate 11B, and a metal plate 13 of the same thickness is disposed on its back side. Furthermore, a plurality of third circuit boards are disposed on the upper surfaces of the first insulating substrate 11A and the second insulating substrate 11B. Additionally, as... Figure 2 As shown, the metal plate 13 is exposed from the back of the encapsulation part 30.

[0143] Conductive substrates 71 and 72 are disposed above the first circuit board 12a and the second circuit board 12b, separated by an insulating substrate 74, and are encapsulated by a packaging unit 30. It should be noted that the conductive substrates 71 and 72 and the insulating substrate 74 are... Figure 18The conductive substrates 61, 62, 63 and the insulating paper 64 are also flat.

[0144] When the conductive posts 19 and 20 of the semiconductor module 10a are mounted with conductive substrates 71 and 72, the other end (front end face) of the conductive posts 19 and 20 on which the conductive substrate 71 is mounted is made higher than the other end (front end face) of the conductive post 20 on which the conductive substrate 72 is mounted. Furthermore, the conductive substrate 71 has an upper opening 71a formed in the region corresponding to the conductive posts 19 and 20 mounted on the conductive substrate 72. The conductive substrate 72 has a lower opening 72a formed for the conductive posts 19 and 20 mounted on the conductive substrate 71 to be inserted without contact.

[0145] Furthermore, on the main surface of the conductive substrates 71 and 72 opposite to the first circuit board 12a and the second circuit board 12b, a terminal hole 41 is formed similarly to that in the third embodiment, and conductive posts 19 and 20 are connected thereto. Additionally, on the main surface opposite to this main surface of the conductive substrate 71, a terminal hole 41 is formed, and external connection terminals 21a and 22a are connected thereto. This terminal hole 41... Figure 23 The middle shows with Figure 5A The same shape. Not limited to this, Figure 23 The conductive substrates 71 and 72 and conductive posts 19 and 20 shown can use the same methods as in the third embodiment as in the first embodiment. Figures 5B to 11 The structure shown. It should be noted that the conductive substrates 71 and 72 and the insulating substrate 74 are formed with through holes for the insertion of external connection terminals 23, 24, and 25.

[0146] like Figure 23 As shown, the insulating substrate 74 has through holes formed in the region corresponding to the terminal holes 41. The through holes in the insulating substrate 74 are larger than the terminal holes 41. Preferably, the through holes in the insulating substrate 74 are larger than the outer diameters of the conductive posts 19 and 20. Furthermore, upper openings 71a and lower openings 72a are formed in the region encompassing all the through holes in the insulating substrate 74. Preferably, the through holes in the insulating substrate 74 are smaller than the upper openings 71a and lower openings 72a. This sufficiently ensures the surface distance relative to the conductive posts 19 and 20.

[0147] Additionally, in semiconductor module 10a, with Figure 21 Similarly, the conductive posts 19 and 20 mounted on the conductive substrate 72 can be inserted through the terminal holes 41 of the conductive substrate 72, with their front ends positioned lower than the front surface of the conductive substrate 71. It should be noted that the conductive posts 19 and 20 are also fixed to the terminal holes 41 by solder. At this time, the upper opening 71a and the lower opening 72a maintain sufficient distances relative to the conductive posts 19 and 20, respectively. This ensures adequate surface distances relative to the conductive posts 19 and 20.

[0148] Furthermore, in semiconductor module 10a, with Figure 22 Similarly, as shown, the conductive substrates 71 and 72 can be recessed in the region including the location where the conductive pillars 19 and 20 are joined, towards the upper opening 71a and the lower opening 72a. Furthermore, the recessed shape can be formed on at least one of the conductive substrates 71 and 72. Additionally, the front end faces of the conductive pillars 19 and 20 mounted on the conductive substrate 71 can be higher than the front end faces of the conductive pillars 19 and 20 mounted on the conductive substrate 72.

[0149] It should be noted that, Figure 23 The example only illustrates the connection of external connection terminals 21a and 22a to the conductive substrate 71. External connection terminals 21a and 22a can be connected to... Figure 3 The semiconductor module 10 is similarly connected to the third circuit board. Furthermore, the main circuit wires and signal wires are used as conductive substrates 71 and 72, but are not limited to this. Additionally, in Figure 23 The description illustrates a case where the circuit consists of two layers, conductive substrates 71 and 72, and an insulating paper 74 in between. However, it is not limited to this; the conductive substrates 71 and 72 can also be integrated with the insulating paper in a printed circuit board. In this case, the printed circuit board can be connected to the conductive posts 19 and 20 using the method described in the second embodiment. Furthermore, the conductive substrate is not limited to two layers; it can also be a single layer or a multilayer structure with three or more layers.

Claims

1. A semiconductor device, characterized by comprising: A semiconductor module and a first conduction substrate, The semiconductor module has a semiconductor element and a first external connection terminal, a first one end portion of the first external connection terminal is electrically connected to the semiconductor element, and a first other end portion of the first external connection terminal extends from the semiconductor element, The first conduction substrate has a first terminal hole formed through a main surface, the first other end portion is fitted into the first terminal hole from a first entrance to a first exit of the first terminal hole and is fixed by solder inside the first terminal hole, and the first conduction substrate is electrically connected to the first external connection terminal, A first locking portion as a step difference, a tapered portion, or a protrusion is formed in an inner periphery of the first terminal hole, and insertion of the first other end portion with respect to the first terminal hole is locked by the first locking portion so that the first other end portion remains in the first terminal hole.

2. The semiconductor device according to claim 1, wherein The semiconductor module has a packaging portion that packages the semiconductor element and the first one end portion of the first external connection terminal, and the first other end portion of the first external connection terminal extends from the packaging portion, The first conduction substrate is provided to the first other end portion outside the packaging portion.

3. The semiconductor device according to claim 1, wherein The semiconductor module has a packaging portion that packages the semiconductor element, the first external connection terminal, and the first conduction substrate.

4. The semiconductor device according to claim 1, wherein A first step difference is formed in a peripheral portion of a first front end surface of the first other end portion, and a second step difference is formed halfway from the first entrance to the first exit of the first terminal hole, The first front end surface is fitted between the second step difference of the first terminal hole and the first exit, and the first step difference of the first other end portion is locked to the second step difference of the first terminal hole.

5. The semiconductor device according to claim 4, wherein A first protrusion portion is provided in a central portion of the first front end surface, and the first protrusion portion is a spacer.

6. The semiconductor device according to claim 4, wherein A first protrusion portion is provided in a central portion of the first front end surface, and the first protrusion portion is integrated with the first front end surface.

7. The semiconductor device according to any one of Claims 1 to 3, wherein In a case where the first locking portion is the protrusion, the first locking portion is formed in at least a portion along an inner periphery of the first terminal hole.

8. The semiconductor device according to any one of Claims 1 to 3, wherein The first locking portion is formed as a tapered portion in an inner peripheral surface of the first terminal hole, and a tapered portion is formed in a side peripheral surface of the first other end portion, The front end surface of the first other end portion is fitted between the first entrance and the first exit, and the side peripheral surface of the first other end portion is locked to the inner peripheral surface of the first terminal hole.

9. The semiconductor device according to claim 3, wherein The semiconductor module has a second external connection terminal, a second one end portion of the second external connection terminal is electrically connected to the semiconductor element together with the first external connection terminal in the packaging portion, and a second other end portion of the second external connection terminal extends from the packaging portion, The first conduction substrate is provided to the second other end portion outside the packaging portion. The semiconductor device has a second conductive substrate provided on the semiconductor module side with respect to the first conductive substrate, has a lower opening through which the first external connection terminal is inserted and a second terminal hole formed through a main surface, the second other end portion of the second external connection terminal is fitted from a second entrance to a second exit of the second terminal hole and is fixed by solder, and the second conductive substrate is electrically connected to the second external connection terminal, The first conductive substrate is formed with an upper opening at a position opposite to a second front end surface of the second other end portion of the second external connection terminal.

10. The semiconductor device according to claim 9, wherein A second locking portion that is a step difference, a tapered portion, or a protrusion is formed in the second terminal hole of the second conductive substrate to lock the insertion of the second other end portion with respect to the second terminal hole, and the second other end portion is left in the second terminal hole by being locked by the second locking portion.

11. The semiconductor device according to claim 10, wherein A first front end surface of the first external connection terminal is located at a position closer to the upper side than the second front end surface of the second external connection terminal.

12. The semiconductor device according to claim 10, wherein The semiconductor device has at least either of a first recess and a second recess, The first recess is formed by recessing the first terminal hole in the first conductive substrate toward the lower opening side, The second recess is formed by recessing the second terminal hole in the second conductive substrate toward the upper opening side.

13. The semiconductor device according to claim 9, wherein A first front end surface of the first external connection terminal and the second front end surface of the second external connection terminal are located at the same position, and the second external connection terminal passes through the first conductive substrate through the second terminal hole.

14. A method of manufacturing a semiconductor device, characterized by The method includes the following steps: A step of preparing a semiconductor module and a first conductive substrate, the semiconductor module having a semiconductor element, a packaging portion that packages the semiconductor element, and a first external connection terminal, a first one end portion of the first external connection terminal being electrically connected to the semiconductor element in the packaging portion, and a first other end portion of the first external connection terminal extending out from the packaging portion, the first conductive substrate being formed with a first terminal hole in a through main surface manner; A step of disposing solder at at least one of a first exit of the first terminal hole of the first conductive substrate and a peripheral portion of the first exit; A step of fitting the first other end portion of the first external connection terminal from a first entrance to the first exit of the first terminal hole of the first conductive substrate; And A step of melting the solder and fixing the first other end portion of the first external connection terminal to the first terminal hole by using the solder in the first terminal hole after being melted, A first locking portion that is a step difference, a tapered portion, or a protrusion is formed on an inner periphery of the first terminal hole, and the insertion of the first other end portion with respect to the first terminal hole is locked by the first locking portion so that the first other end portion is left in the first terminal hole.

Images