Substrate processing device and substrate processing method

Abstract

The present invention provides a technology for better performing etching processing on a substrate. A substrate holding table (20) holds a substrate (W) at a predetermined position. An etching liquid supply unit (37) and a nozzle (30) supply etching liquid to the substrate (W) at a predetermined position. A rotary motor (22) rotates the substrate holding table (20) around a predetermined rotation axis (Ax1). A thermal imager (70) obtains a thermal image (temperature distribution) of a peripheral area (PA1) around a substrate area occupied when the substrate W in a processing space (TS1) within a chamber (10) is configured at a predetermined position. A characteristic value calculation unit (902) calculates a characteristic value from the thermal image, and the characteristic value is related to the etching amount caused by the etching process using the etching liquid. An etching determination unit (9031) determines whether the etching process is good or not based on the calculated characteristic value.

Description

Technical Field

[0001] The present invention relates to a technology for etching a substrate. The substrate to be processed includes, for example, semiconductor substrates, liquid crystal display devices and organic EL (Electroluminescence) display devices such as FPD (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, solar cell substrates, printed circuit substrates, etc. Background Art

[0002] In the past, there has been a technique for etching by supplying an etching liquid to the surface of a substrate. As a prior art related to the present invention, there are, for example, the techniques described in Patent Documents 1 and 2. Patent Documents 1 and 2 disclose the following techniques: the temperature of the substrate surface is monitored and the supply of the etching liquid is stopped when the temperature of the substrate reaches a target temperature, thereby performing etching processing while the substrate is at an appropriate temperature.

[0003] Prior art literature

[0004] Patent Document 1: Japanese Patent Application Publication No. 2015-191895.

[0005] Patent document 2: Japanese Patent Application Publication No. 2017-201723. Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, etching may be affected not only by the temperature of the substrate but also by the temperature around the substrate. The prior art only monitors the temperature of the substrate surface without considering the effect of the ambient temperature around the substrate on etching. Therefore, it is possible that defects may occur in the etching process due to radiation heat from components around the substrate.

[0008] An object of the present invention is to provide a technique for preferably performing an etching process on a substrate.

[0009] Methods for solving problems

[0010] In order to solve the above-mentioned problems, a first type of substrate processing device for performing etching processing on a substrate comprises: a chamber having a processing space therein; a substrate holding portion which holds the substrate at a predetermined position in the chamber; an etching liquid supply portion which supplies etching liquid to the substrate held by the substrate holding portion; a rotating portion which rotates the substrate holding portion around a predetermined rotation axis; a temperature distribution acquisition portion which acquires the temperature distribution of a peripheral area around a substrate area occupied by the substrate when the substrate is arranged at the predetermined position in the chamber; and a characteristic value calculation portion which calculates a characteristic value related to the etching amount of the substrate caused by the etching processing using the etching liquid from the temperature distribution.

[0011] Regarding the second aspect, in the substrate processing apparatus of the first aspect, the substrate processing apparatus further includes an etching determination unit that determines whether the etching process performed on the substrate is good or not based on a comparison between the characteristic value and a threshold value determined in advance.

[0012] Regarding a third aspect, in the substrate processing apparatus of the first aspect or the second aspect, the characteristic value calculation unit calculates the characteristic value from a relational expression representing a relationship between the temperature distribution and the etching amount.

[0013] Regarding the fourth aspect, in the substrate processing apparatus of the third aspect, the substrate processing apparatus further includes: a relational expression generating unit that generates the relational expression based on the temperature distribution at a predetermined timing in the etching process and an etching amount of the substrate after the etching process.

[0014] Regarding a fifth aspect, in the substrate processing apparatus of the fourth aspect, the characteristic value calculation unit calculates the characteristic value by substituting the temperature distribution at a timing corresponding to the predetermined timing in the etching process into the relational expression.

[0015] Regarding the sixth aspect, in the substrate processing apparatus of any one of the third aspect to the fifth aspect, the etching amount is an etching amount on each circle with different radii centered on the rotation axis.

[0016] Regarding the seventh aspect, in the substrate processing apparatus of any one of the first to sixth aspects, the temperature distribution acquisition unit has: a thermal imager that includes an area where the substrate held by the substrate holding unit is arranged within a photographing area; and the temperature distribution is a thermal image.

[0017] Regarding the 8th method, in the substrate processing device of the 7th method, the relationship is a regression function, and the regression function takes the temperature indicated by each pixel value constituting the thermal image as an independent variable, and takes the etching amount on each circle of different radius as a dependent variable.

[0018] Regarding a ninth aspect, in the substrate processing apparatus according to any one of the first to eighth aspects, the characteristic value calculation unit calculates the characteristic value from the temperature distribution acquired in a state where the substrate holding unit does not hold the substrate.

[0019] Regarding a tenth aspect, in the substrate processing apparatus of the ninth aspect, the substrate processing apparatus further includes a temperature changing unit that changes the temperature of the substrate disposed at the predetermined position and the peripheral region based on the characteristic value.

[0020] Regarding the eleventh aspect, in the substrate processing apparatus of the ninth aspect or the tenth aspect, the substrate processing apparatus further comprises: a schedule changing unit that changes a schedule that specifies a time to carry the substrate into the chamber based on the characteristic value.

[0021] Regarding a twelfth aspect, in the substrate processing apparatus of any one of the first to eighth aspects, the characteristic value calculation unit calculates the characteristic value from the temperature distribution acquired in a state where the substrate holding unit holds the substrate.

[0022] Regarding a thirteenth aspect, in the substrate processing apparatus of the twelfth aspect, the substrate processing apparatus further includes a temperature changing unit that changes the temperature of the substrate disposed at the predetermined position and the peripheral region based on the characteristic value.

[0023] Regarding a fourteenth aspect, in the substrate processing apparatus of the twelfth aspect or the thirteenth aspect, the substrate processing apparatus further comprises: a schedule changing unit that changes a schedule that specifies a time to carry the substrate into the chamber based on the characteristic value.

[0024] The 15th method is a substrate processing method, comprising the following steps: a) maintaining a substrate at a predetermined position in a chamber; b) rotating the substrate located at the predetermined position through step a) around a rotation axis; c) supplying an etching liquid to the surface of the substrate rotated through step b); d) obtaining a temperature distribution of a peripheral area around a substrate area occupied by the substrate when the substrate is configured at the predetermined position in the chamber; and e) calculating a characteristic value from the temperature distribution obtained through step d), the characteristic value being used to evaluate an etching process performed on the substrate using the etching liquid.

[0025] Effects of the Invention

[0026] According to the substrate processing apparatus of the first aspect, a characteristic value related to the etching amount of the substrate is calculated from the temperature distribution around the region where the substrate is arranged. Therefore, whether etching failure occurs due to the temperature around the substrate can be appropriately evaluated based on the characteristic value.

[0027] According to the substrate processing apparatus of the second aspect, the operator can appropriately set the threshold value, and thereby appropriately determine whether the etching process performed on the substrate is good or not based on the temperature distribution of the peripheral region.

[0028] According to the substrate processing apparatus of the third aspect, the predicted value of the etching amount can be calculated by substituting the temperature distribution into the relational expression.

[0029] According to the substrate processing apparatus of the fourth aspect, it is possible to obtain a relational expression for predicting the etching amount from the temperature gradient at a predetermined timing.

[0030] According to the substrate processing apparatus of the fifth aspect, the acquisition timing of the temperature distribution substituted into the relational expression for calculating the characteristic value coincides with the predetermined timing of the temperature distribution used for generating the relational expression. Therefore, the characteristic value can be appropriately acquired from the relational expression and the temperature distribution.

[0031] According to the substrate processing apparatus of the sixth aspect, the etching process is performed while rotating the substrate, so the etching amount on the same circumference of the substrate is substantially uniform. Therefore, by obtaining the etching amount on each circumference of different radii, the distribution of the etching amount of the substrate can be efficiently obtained.

[0032] According to the substrate processing apparatus of the seventh aspect, since imaging is performed by the thermal imager, the temperature distribution around the region where the substrate is arranged can be easily acquired.

[0033] According to the substrate processing apparatus of the eighth aspect, when the substrate is rotated while being processed with the etching liquid, the etching amounts on the circumferences of different radii become substantially the same. Therefore, the etching amounts on the circumferences of different radii are used as dependent variables, thereby reducing the number of dependent variables. Thus, a relational expression for obtaining the etching amounts at various locations on the substrate can be appropriately and effectively generated.

[0034] According to the substrate processing apparatus of the ninth aspect, before the substrate is held by the substrate holding portion, it can be checked based on the characteristic value whether the temperature distribution around the region where the substrate is arranged is suitable for etching.

[0035] According to the substrate processing apparatus of the tenth aspect, the temperature distribution around the region where the substrate is arranged is changed to be suitable for etching processing, so that a preferable etching processing can be performed.

[0036] According to the substrate processing apparatus of the eleventh aspect, the loading of the substrate can be delayed so that the temperature distribution around the region where the substrate is arranged reaches an appropriate temperature. This can suppress defects in etching processing on the substrate.

[0037] According to the substrate processing apparatus of the twelfth aspect, after the substrate is held by the substrate holding portion, it is possible to check whether the temperature distribution around the region where the substrate is arranged is suitable for etching based on the characteristic value.

[0038] According to the substrate processing apparatus of the thirteenth aspect, the temperature distribution of the periphery is changed to be suitable for the etching process, so that the etching process can be preferably performed.

[0039] According to the substrate processing apparatus of the fourteenth aspect, the loading of the substrate can be delayed until the temperature distribution around the substrate reaches a temperature suitable for etching processing. Thus, defects in etching processing can be suppressed.

[0040] According to the substrate processing method of the fifteenth aspect, a characteristic value related to the etching amount of the substrate can be calculated from the temperature distribution around the region where the substrate is arranged. Therefore, whether etching failure occurs due to the temperature around the substrate can be appropriately evaluated based on the characteristic value. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a diagram showing the overall structure of a substrate processing apparatus 100 according to the first embodiment.

[0042] Figure 2 It is a schematic plan view of the cleaning processing unit 1 according to the first embodiment.

[0043] Figure 3 It is a diagram showing the cleaning processing unit 1 and the control unit 9 according to the first embodiment.

[0044] Figure 4 This is a diagram conceptually showing a thermal image (thermography) TH1.

[0045] Figure 5 1 is a diagram showing an upper surface W1 of a substrate W.

[0046] Figure 6 It is a diagram showing the first half of the etching process sequence.

[0047] Figure 7 This is a diagram showing the second half of the etching process sequence.

[0048] Figure 8 It is a diagram showing a cleaning processing unit 1 and a control unit 9A according to a second embodiment. DETAILED DESCRIPTION

[0049] Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the components described in the present embodiment are only for illustration, and the purpose is not to limit the scope of the present invention to this. In the drawings, the size or number of each part is exaggerated or simplified as needed for easy understanding.

[0050] Expressions that indicate relative or absolute positional relationships (e.g., "toward a direction," "along a direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, may not only strictly indicate the positional relationship, but may also indicate a state after relative displacement of an angle or distance within a tolerance or a range that can achieve the same degree of function. Expressions that indicate an equal state (e.g., "same," "equal," "homogeneous," etc.), unless otherwise specified, may not only indicate a quantitative and strictly equal state, but may also indicate a state with a tolerance or a difference that can achieve the same degree of function. Expressions that indicate a shape (e.g., "square shape" or "cylindrical shape," etc.), unless otherwise specified, may not only indicate a strictly geometric shape, but may also indicate a shape with, for example, concave-convex and chamfered corners within a range that can achieve the same degree of function. Expressions that "provide," "have," "have," "include," or "have" a constituent element are not exclusive expressions that exclude the existence of other constituent elements. The expression “B on A”, unless otherwise specified, refers not only to a case where two elements A and B are in contact, but also includes a case where the two elements A and B are separated.

[0051] <1. First Embodiment>

[0052] Figure 1 : is a diagram showing the overall structure of the substrate processing device 100 of the first embodiment. The substrate processing device 100 is a blade-type processing device that processes the substrates W to be processed one by one. The substrate processing device 100 uses an etching liquid and a rinse liquid such as pure water to clean the substrate W, which is a circular thin plate and a silicon substrate, and then performs a drying process. As the etching liquid, various liquids including hydrofluoric acid, nitric acid, etc. can also be used. As the rinse liquid, various liquids such as pure water and ultrapure water can also be used. In the following description, the etching liquid and the rinse liquid are sometimes collectively referred to as the "processing liquid".

[0053] The substrate processing apparatus 100 includes a plurality of cleaning processing units 1 , an indexer 102 , and a main transfer robot 103 .

[0054] The indexing machine 102 transports the substrate W of the processing object received from outside the device into the device, and carries out the processed substrate W that has completed the cleaning process to the outside of the device. The indexing machine 102 carries a plurality of carriers (not shown in the figure) and is equipped with a transfer robot (not shown in the figure). As a carrier, a FOUP (Front Opening Unified Pod) that stores the substrate W in a closed space, a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette) that exposes the substrate W to the outside air can also be used. The transfer robot transfers the substrate W between the carrier and the main transport robot 103.

[0055] The cleaning processing unit 1 performs liquid processing and drying processing on a substrate W. Twelve cleaning processing units 1 are arranged on the substrate processing apparatus 100. Specifically, four towers are arranged to surround the main transport robot 103, and each tower includes three cleaning processing units 1 stacked in the vertical direction. Figure 1 FIG. 1 schematically shows a cleaning unit 1 stacked in three layers. In addition, the number of cleaning units 1 in the substrate processing apparatus 100 is not limited to 12, and may be changed appropriately.

[0056] The main transport robot 103 is installed in the center of the four towers where the cleaning processing units 1 are stacked. The main transport robot 103 carries the substrate W to be processed received from the indexer 102 to each cleaning processing unit 1. In addition, the main transport robot 103 carries out the processed substrate W from each cleaning processing unit 1 and delivers it to the indexer 102.

[0057] <Cleaning Processing Unit 1>

[0058] Hereinafter, only one of the twelve cleaning processing units 1 mounted in the substrate processing apparatus 100 will be described. However, the other cleaning processing units 1 have the same configuration except for the arrangement relationship of the nozzles 30 .

[0059] Figure 2 It is a schematic plan view of the cleaning processing unit 1 according to the first embodiment. Figure 3 It is a diagram showing the cleaning processing unit 1 and the control unit 9 according to the first embodiment. Figure 2 2 shows a state where the substrate W is not held on the substrate holding stage 20. Figure 3 A state in which the substrate W is held on the substrate holding stage 20 is shown.

[0060] The cleaning processing unit 1 comprises in the chamber 10: a substrate holding table 20, which holds the substrate W in a horizontal position (a position in which the normal line of the surface of the substrate W is along the vertical direction); a nozzle 30, which is used to supply a processing liquid to the upper surface of the substrate W held by the substrate holding table 20; a processing cup 40, which surrounds the substrate holding table 20; and a thermal imager (Thermography camera) 70, which captures the space above the substrate holding table 20.

[0061] The chamber 10 has a processing space TS1 for processing substrates inside. It has: side walls that surround the four sides in the vertical direction; a top wall that blocks the upper side of the side walls; and a bottom wall 13 that blocks the lower side of the side walls 11. The space surrounded by the side walls 11, the top wall 12 and the bottom wall 13 forms the processing space TS1. A loading and unloading port and a shutter are provided at a part of the side wall 11 of the chamber 10. The loading and unloading port is used for the main transport robot 103 to load and unload the substrate W into and out of the chamber 10, and the shutter opens and closes the loading and unloading port (the loading and unloading port and the shutter are omitted in the figure).

[0062] The substrate holding table 20 is fixed to the upper end of a rotating shaft 24 extending in the vertical direction. The central part of the lower end of the substrate holding table 20 is connected to the rotating shaft 24. The rotating shaft 24 is connected to a rotating motor (spin motor) 22. The rotating motor 22 rotates the rotating shaft 24 around the rotating axis Ax1 according to the control command from the control unit 9. The rotating motor 22 rotates the substrate holding table 20 in a horizontal plane by rotating the rotating shaft 24. The substrate holding table 20 is an example of a substrate holding portion that holds the substrate W at a predetermined position in the chamber 10. The rotating motor 22 and the rotating shaft 24 are an example of a rotating portion that rotates the substrate holding table 20 as a substrate holding portion around a predetermined rotating axis Ax1. The substrate holding table 20, the rotating motor 22, and the rotating shaft 24 are surrounded by a cover member 23.

[0063] The substrate holding table 20 has a disc shape. The outer diameter of the substrate holding table 20 is smaller than the diameter of the circular substrate W held by the substrate holding table 20. The substrate holding table 20 has an upper surface 21 opposite to a portion of the lower surface of the substrate W to be held. A plurality of suction holes are dispersedly provided on the upper surface 21. Each suction hole is connected to a suction unit such as a vacuum pump. When the suction unit is activated while the substrate W is placed on the upper surface 21 of the substrate holding table 20, the atmosphere between the substrate W and the upper surface 21 is sucked by each suction hole. As a result, the substrate W is adsorbed on the upper surface 21. The substrate holding table 20 is an example of a substrate holding portion that holds a substrate at a predetermined position in a substrate chamber.

[0064] In addition, the substrate holding portion does not necessarily have to include the substrate holding table 20 that attracts the substrate W. For example, the substrate holding portion may include a plurality of chuck pins that chuck the substrate W by supporting different portions of the outer edge of the substrate W.

[0065] When the rotary motor 22 rotates the rotary shaft 24 while the substrate holding table 20 holds the substrate W, the substrate W rotates around the rotation axis Ax1 in the vertical direction passing through the center of the substrate W. In addition, the driving of the rotary motor 22 is controlled by the control unit 9. In the following description, the horizontal direction orthogonal to the rotation axis Ax1 is referred to as the "radial direction". In addition, the direction close to the rotation axis Ax1 in the radial direction is referred to as the "radial inner direction", and the direction away from the rotation axis Ax1 in the radial direction is referred to as the "radial outer direction".

[0066] The nozzle 30 includes ejection heads 31a, 31b and a nozzle arm 32. The ejection heads 31a, 31b are mounted on the front end of the nozzle arm 32. The base end side of the nozzle arm 32 is fixedly connected to the nozzle base 33. The nozzle can be moved by a motor 332 (nozzle moving unit) provided on the nozzle base 33. Figure 2 ) rotates around an axis in the vertical direction.

[0067] like Figure 2 As shown by the arrow AR34 in FIG. 3 , the nozzle 30 moves in a horizontal arc shape between a position above the substrate holding table 20 and a standby position outside the processing cup 40 by rotating the nozzle base 33. The nozzle 30 swings above the upper surface 21 of the substrate holding table 20 by rotating the nozzle base 33. Specifically, the nozzle 30 moves to a predetermined processing position TP1 extending in the horizontal direction above the substrate holding table 20. In addition, the so-called moving the nozzle 30 to the processing position TP1 has the same meaning as moving the ejection heads 31a and 31b at the front end of the nozzle 30 to the processing position TP1.

[0068] The nozzle 30 is connected to the processing liquid supply unit 36. The processing liquid supply unit 36 ​​includes an etching liquid supply unit 37 and a rinsing liquid supply unit 38. The etching liquid supply unit 37 is connected to the ejection head 31a and supplies the etching liquid to the ejection head 31a. The ejection head 31a ejects the etching liquid toward the upper surface of the rotating substrate W. The rinsing liquid supply unit 38 is connected to the ejection head 31b and supplies the rinsing liquid to the ejection head 31b. The ejection head 31b ejects the rinsing liquid toward the upper surface of the rotating substrate W.

[0069] The etching liquid supply unit 37 includes a pipe 371 that connects the etching liquid supply source and the ejection head 31a, and a valve 372 that is provided on the pipe 371. The rinse liquid supply unit 38 includes a pipe 381 that connects the rinse liquid supply source and the ejection head 31b, and a valve 382 that is provided on the pipe 381. The supply valves 372 and 382 open and close the pipes 371 and 381 in accordance with a control signal from the control unit 9. Thus, the supply of the processing liquid to each ejection head 31a and 31b can be controlled to be turned on / off, and the ejection of the processing liquid from each ejection head 31a and 31b can be controlled to be turned on / off.

[0070] In addition, the number of ejection heads provided in the nozzle 30 is not limited to two, and may be one, or three or more. In addition, ejection heads may be provided according to the type of processing liquid, or two or more processing liquids may be ejected from the same ejection head. In addition, a nozzle for supplying processing liquid to the substrate W may be provided separately from the nozzle 30.

[0071] As described above, the nozzle 30 (specifically, each ejection head 31 a , 31 b ) stops at the processing position TP1 and ejects the processing liquid. The processing liquid ejected from the nozzle 30 adheres to the upper surface of the substrate W at a predetermined position held by the substrate holding stage 20 .

[0072] A heat source 25 is built inside the substrate holding table 20. The heat source 25 generates heat according to a control signal from the control unit 9. Thus, the temperature of the substrate holding table 20 and the elements arranged around the substrate holding table 20 are changed. Thus, the substrate W held by the substrate holding table 20 can be heated. The heat source 25 can constitute a temperature changing unit that changes the temperature of the substrate W arranged at a predetermined position and its surrounding area PA1.

[0073] The temperature changing unit for changing the temperature of the substrate W is not limited to the heat source 25 built into the substrate holding table 20. For example, as the temperature changing unit, a heat source provided outside the substrate holding table 20 and provided in the processing space TS1 of the chamber 10 to provide radiant heat to the substrate W may be used. In addition, as the temperature changing unit, a cooling mechanism for cooling the substrate holding table 20 or its periphery may be provided.

[0074] The processing cup 40 has a cylindrical shape that can surround the outer circumference of the substrate holding table 20. The upper portion of the processing cup 40 has a shape that is inclined vertically upward and radially inward. When the substrate W is held by the substrate holding table 20, the upper portion of the processing cup 40 surrounds the substrate W.

[0075] When the processing liquid is supplied to the upper surface of the substrate W held by the substrate holding table 20, the processing liquid is swung outward in the radial direction due to the rotation of the substrate W. The processing cup 40 receives the processing liquid swung out from the substrate W on the inner peripheral surface of the upper portion. The processing liquid received by the inner peripheral surface falls and is appropriately discharged from the chamber 10. In addition, the substrate W may be surrounded by a portion of the processing cup 40 that is lower than the upper portion.

[0076] A mechanism may be provided to vertically raise and lower the upper end of the processing cup 40. In this case, when the substrate W is loaded onto the substrate holding table 20, the upper end of the processing cup 40 is lowered below the upper surface 21, thereby preventing the substrate W from interfering with the processing cup 40.

[0077] The thermal imager 70 includes a semiconductor sensor for detecting heat, such as an infrared sensor, and an optical system such as a focusing lens. In order to photograph the upper surface of the substrate W held by the substrate holding table 20, the photographing direction of the thermal imager 70 (i.e., the optical axis direction of the photographing optical system) is set to be obliquely downward toward the rotation center of the upper surface of the substrate W (or its vicinity). With respect to the horizontal direction, the field of view of the thermal imager 70 includes the Figure 2 The photographing area PA is surrounded by a dotted line.

[0078] The imaging area PA of the thermal imager 70 is set to include a peripheral area PA1 around a substrate area occupied by the substrate W when the substrate W is held by the substrate holding stage 20 in the processing space TS1 in the chamber 10 .

[0079] The electrical signal output from the semiconductor sensor of the thermal imager 70 is input to the control unit 9. The thermal image generation unit 901 of the control unit 9 generates a thermal image according to the input electrical signal. The thermal image is an example of information indicating the temperature distribution of the shooting area PA (including the peripheral area PA1) of the thermal imager 70.

[0080] exist Figure 3 In the example shown, the peripheral area PA1 includes components arranged around the substrate W, such as the upper end of the processing cup 40, the upper surface W1 of the substrate W (the upper surface 21 of the substrate holding table 20 when there is no substrate W), and the front ends of the ejection heads 31a and 31b of the nozzle 30 located at the processing position TP1. In addition, the peripheral area PA1 may also include a part of each element such as the side wall 11 of the chamber 10 and the nozzle arm 32.

[0081] When the substrate W is not held by the substrate holding table 20 (that is, when the substrate W does not exist at a predetermined position), the temperature distribution of the upper surface 21 of the substrate holding table 20 is included in the obtained thermal image. When the substrate W is held by the substrate holding table 20 (that is, when the substrate W exists at a predetermined position), the upper surface 21 of the substrate holding table 20 is arranged on the back side of the substrate W. Therefore, the temperature distribution of the upper surface 21 is not included in the obtained thermal image. In addition, when the nozzle 30 is arranged at the processing position TP1, a part of the nozzle 30 (for example, the ejection heads 31a, 31b) and the like are included in the thermal image. In this way, the elements included in the shooting area PA of the thermal imager 70 will change according to the situation, and therefore the elements included in the thermal image will also change.

[0082] The control unit 9 controls the operation of each element of the substrate processing apparatus 100. The hardware configuration of the control unit 9 is the same as that of a general computer. That is, the control unit 9 includes: a CPU (Central Processing Unit) that performs various calculations; a ROM (Read Only Memory) that is a read-only memory that stores basic programs; a RAM (Random Access Memory) that is a readable and writable memory that stores various information; and a storage unit 91 that stores control applications or data.

[0083] The control unit 9 is connected to a display unit 92, an operation unit 93, and a notification unit 94. The display unit 92 is a display device that displays various images according to an image display signal from the control unit 9. The operation unit 93 is an input device such as a mouse and a keyboard that receives input operations from an operator.

[0084] The notification unit 94 has a function of notifying the operator of an abnormality that occurs in each cleaning processing unit 1. As the notification unit 94, an alarm such as a lamp and a buzzer may be used. For example, when the etching determination unit 9031 determines that the etching process performed in each cleaning processing unit 1 is not good, the notification unit 94 notifies the outside of the situation. In addition, the display unit 92 may also display a predetermined image such as a warning screen. In this way, the display unit 92 may also function as a notification unit.

[0085] The CPU operates according to the control application program stored in the storage unit 91, etc., so that the control unit 9 functions as a thermal image generating unit 901, a characteristic value calculating unit 902, a prescribed processing executing unit 903, and a relational expression generating unit 904. In addition, some or all of these functions can also be realized in hardware by a dedicated circuit.

[0086] The thermal image generating unit 901 generates a thermal image based on the output signal of the thermal imager 70. The thermal image is an image showing the temperature distribution of the shooting area of ​​the thermal imager 70.

[0087] The characteristic value calculation unit 902 calculates a characteristic value from the temperature distribution shown by the thermal image generation unit 901. The characteristic value is a value related to the etching amount of the substrate W caused by the etching process using the etching solution performed in the cleaning process unit 1.

[0088] The predetermined processing execution unit 903 executes a predetermined processing according to the feature value calculated by the feature value calculation unit 902. The predetermined processing execution unit 903 includes an etching determination unit 9031, a temperature control unit 9032, a schedule change unit 9033, and an output control unit 9034.

[0089] The relational expression generating unit 904 generates a relational expression 912, which represents the corresponding relationship between the temperature distribution (thermal image) of the peripheral area PA1 and the etching amount of the substrate W after a predetermined etching process. The relational expression 912 can also be obtained by experimentally performing etching processes in each cleaning processing unit 1. In addition, the relational expression 912 can also be obtained by simulation.

[0090] The etching determination unit 9031 determines whether the etching process on the substrate W is good or bad based on the comparison between the appropriately determined determination threshold 914 and the characteristic value calculated by the characteristic value calculation unit 902 . The temperature control unit 9032 controls the heat source 25 according to the thermal image obtained by the thermal imager 70 .

[0091] The schedule changing unit 9033 changes the schedule that specifies the time of each process performed in each cleaning processing unit 1. The schedule specifies, for example, the processing schedule for the substrate W to be carried into each chamber 10, the ejection time of the processing liquid ejected from the nozzle 30 to the substrate W, and the like. The output control unit 9034 controls the operation of the display unit 92 and the notification unit 94 as output devices. For example, the output control unit 9034 displays various images on the display unit 92 or causes the notification unit 94 to make a notification according to the result of the determination made by the etching determination unit 9031.

[0092] <Relational Expression Generation Processing by Relational Expression Generation Unit 904>

[0093] Relational expression 912 is a mathematical expression for obtaining a predicted value of the etching amount when the etching process is performed under the temperature distribution condition from the temperature distribution of the peripheral area PA1 around the substrate W. Relational expression 912 is obtained by multiple regression analysis (Multiple Regression Analysis) using the etching amount as the target variable (dependent variable) and the temperature distribution shown in the thermal image as the explanatory variable (independent variable).

[0094] Specifically, a data set of thermal images obtained when etching is performed under different conditions and the etching amount of the substrate W is prepared in advance in the cleaning processing unit 1. The so-called different conditions may also be a case where the heating temperature of the substrate W and the temperature condition of at least one of the peripheral area PA1 are different, in addition to the case where the processing conditions are the same but the production lots are different.

[0095] A thermal image corresponding to the independent variable (explanatory variable) of the relational expression 912 is obtained at a specified timing in the etching process. The etching process includes: a carry-in phase, in which the main transport robot 103 carries the substrate W into the chamber 10; an etching liquid supply phase, in which the etching liquid is supplied to the substrate W held by the substrate holding table 20 and processed; and a rinsing liquid supply phase, in which the rinsing liquid is supplied to the substrate W and processed. The carry-in phase is a state in which the substrate W is not held by the substrate holding table 20. Therefore, when the specified timing is set to the carry-in phase, the obtained thermal image does not include the temperature distribution information of the upper surface W1 of the substrate W, but includes the temperature distribution information of the upper surface 21 of the substrate holding table 20. The stage after the carry-in phase is a state in which the substrate W is held by the substrate holding table 20. When the specified timing is set to after the carry-in phase, the obtained thermal image includes the temperature distribution information of the upper surface W1 of the substrate W.

[0096] Figure 4 1 is a diagram conceptually showing a thermal image TH1. The thermal image TH1 is composed of, for example, 640 pixels in the horizontal direction and 480 pixels in the vertical direction. j (j is a natural number from 1 to N) has a pixel value X j Indicates the temperature of the actual position corresponding to each pixel.

[0097] Figure 5 is a diagram showing the upper surface W1 of the substrate W. The etching amount is measured after each etching process performed under different conditions. The etching amount may be measured at only a specific location on the upper surface W1 of the substrate W, or may be measured at different locations on the upper surface W1. Figure 5 As shown, the rotation axis Ax1 can also be used as the center for different radii r i (i is a natural number from 1 to n) each circle Ci Calculate the etching amount Y i In this case, for each circumference, it is also possible to i The average of the etching amounts measured at multiple locations on the circle C is taken as the average of the etching amounts measured at multiple locations on the circle C. i Etching amount Y i Alternatively, for each circumference, it is also possible to set only one circumference C i The etching amount measured at a point on the circle is taken as the circumference C i Etching amount Y i .

[0098] Thus, for each circle C i The reason for calculating the etching amount is to consider the etching amount on the same circumference C. i In the cleaning processing unit 1, since the etching liquid is supplied to the rotating substrate W, the etching liquid supplied to the center of the substrate W (rotation axis Ax1) will spread from the center of the substrate W in a concentric circle. Therefore, the thickness of the etching liquid in the etching process is likely to be roughly the same on each circumference throughout the whole circle. In addition, since the substrate W rotates, it can be considered that the influence of the temperature distribution in the peripheral area PA1 around the substrate W on the etching will be uniform on each circumference throughout the whole circle. Therefore, the etching amount in the substrate W is approximately the same on the same circumference C. i Therefore, by obtaining the etching amount for each circle with different radii, the etching condition on the upper surface W1 of the substrate W can be appropriately understood.

[0099] As described above, when preparing the pixel value X of the thermal image j And the etching amount Y i When the data set is , the relational expression generating unit 904 will obtain the relational expression 912 as the regression function through multivariate regression analysis. Specifically, the etching amount Y i As the target variable (dependent variable), the pixel value X of the thermal image j As the explanatory variable (independent variable), for each circle C i (Radius distance r i ) Through multiple regression analysis, we can find the α in the regression function shown in the following formula (1): i (i is a natural number from 1 to N) and β ij (j is a natural number from 1 to n.) As the multiple regression analysis, various machine learning methods such as L1 regularization (Lasso) regression, L2 regularization (Ridge) regression, and L1+L2 (Elastic Net) regularization regression can be used.

[0100] [Formula 1]

[0101] Regression function:

[0102] In addition, the prescribed timing is not limited to only one. For example, multiple prescribed timings may be set. In this case, a regression function may be generated at each prescribed timing. In this case, since the predicted value of the etching amount can be calculated at each timing corresponding to each prescribed timing, the quality of the etching can be checked at each timing. For example, multiple prescribed timings may be set for each stage before and after the substrate is moved in.

[0103] When the eigenvalue calculation unit 902 performs etching processing in the cleaning processing unit 1, the data of the thermal image obtained at the timing corresponding to the specified timing (the time when the thermal image used to generate the relational expression 912 is obtained) is substituted into the relational expression 912. When the relational expression 912 is generated using thermal images of multiple specified timings, the eigenvalue calculation unit 902 substitutes the data of the thermal image of each timing corresponding to each specified timing into the relational expression 912. The value thus calculated represents the value that can be expected for each circumference C i Each circumference C obtained by etching i Thus, by using the relational expression 912, the etching amount of the substrate W can be predicted from the thermal image obtained by photographing the peripheral area PA1 around the substrate W.

[0104] <Threshold value for judgment>

[0105] The determination threshold 914 is set in order for the etching determination unit 9031 to determine whether the predicted value of the etching amount indicated by the characteristic value is appropriate in advance. The determination threshold 914 may include, for example, the in-plane average value Y of the etching amount calculated by the following formula (2): Ave (The circumferences C1 to C1 of the substrate W are n Etching amount Y1 to Y n The good or bad reference value (maximum value ST1 max and the minimum value ST1 min In this case, the characteristic value calculation unit 902 can calculate the etching amount Y1 to Y from the relational expression 912 (regression function). n (Predicted value) Calculate the average value Y within the surface Ave as a feature value.

[0106] [Formula 2]

[0107] Average within the surface:

[0108] In addition, the judgment threshold value 914 may include an in-plane range Y of the etching amount calculated by the following formula (3): Ran (The circumferences C1 to C1 of the substrate W are n Etching amount Y1 to Y nThe difference between the maximum value and the minimum value in the good or bad reference value (maximum value ST2 max In this case, the characteristic value calculation unit 902 can calculate the etching amount Y1 to Y from the relational expression 912 (regression function). n (Prediction value) Calculate the range Y within the surface Ran as a feature value.

[0109] [Formula 3]

[0110] In-plane range:

[0111] Each circle C1 to C n Etching amount Y1 to Y n The maximum value among

[0112] Each circle C1 to C n Etching amount Y1 to Y n The minimum value among

[0113] Thus, the in-plane average value Y of the etching amount is included as the judgment threshold value. Ave and / or in-plane range Y Ran The quality standard of the etching process can be appropriately determined from the calculated characteristic values.

[0114] <Sequence of Etching Process>

[0115] Next, the procedure of etching processing performed in the substrate processing apparatus 100 will be described. Figure 6 It is a diagram showing the first half of the etching process sequence. Figure 7 This is a diagram showing the second half of the etching process sequence. Unless otherwise specified, Figure 6 and Figure 7 Each of the processes shown is performed under the control of the control unit 9 . Figure 6 and Figure 7 The sequence shown shows a series of processes in one cleaning processing unit 1 from a stage before a substrate W to be etched is carried in to a stage after the substrate W is processed by the etching liquid and carried out. Figure 6 and Figure 7 The processes shown are not essential and may be partially omitted. In addition, the processes may be performed in different orders as long as no contradiction occurs.

[0116] First, before the main transfer robot 103 carries the substrate W into the chamber 10 of the cleaning processing unit 1, a thermal image ( Figure 6:Step S101). Specifically, the thermal imager 70 captures the capture area PA, and the thermal image generation unit 901 generates a thermal image based on the output signal of the thermal imager 70. Since the substrate W is not held by the substrate holding platform 20, the generated thermal image includes information on the temperature distribution of the upper surface 21 of the substrate holding platform 20 and the surrounding area PA1.

[0117] When a thermal image is generated, the characteristic value calculation unit 902 calculates the characteristic value ( Figure 6 :Step S102). The relational expression 912 used here is a regression function generated from the data set of the thermal image and the etching amount in the stage before the substrate is moved in. The thermal image is substituted into the relational expression 912, thereby obtaining the predicted value of the etching amount in the stage before the substrate is moved in. In addition, the characteristic value calculation unit 902 calculates the characteristic value for etching determination in the next step based on the predicted value obtained from the relational expression 912. The characteristic value is, for example, the in-plane average value Y of the etching amount (predicted value) Ave 、Surface range Y Ran .

[0118] When the characteristic value is calculated, the etching determination unit 9031 performs etching determination ( Figure 6 : Step S103). That is, the etching determination unit 9031 determines whether the etching process is good or not based on the comparison between the characteristic value obtained in step S102 and the determination threshold value 914.

[0119] For example, when the in-plane average value Y of the etching amount is set as the judgment threshold 914 Ave The good or bad reference value (maximum value ST1 max and minimum value ST1 min ) can be determined as the circumference C1 to C calculated as the characteristic value. n Is the average value within the surface of the minimum value ST1 serving as the standard value for the quality? min To maximum value ST1 max The average value Y in the surface Ave If it is within the range of the quality reference value, it is given a positive evaluation, and if it is outside the range, it is given a negative evaluation.

[0120] In the in-plane range Y of the etching amount set as the judgment threshold 914 Ran The good or bad reference value (maximum value ST2 max ), the in-plane range Y calculated as the feature value can be determined Ran Is it smaller than the good or bad reference value? Ran When the value is equal to or lower than the quality reference value, a positive evaluation is given, and when the value exceeds the quality reference value, a negative evaluation is given.

[0121] After the etching determination, the output control unit 9034 of the predetermined processing execution unit 903 executes processing for causing the display unit 92 to display or the notification unit 94 to notify the positive / negative evaluation according to the result of the etching determination ( Figure 6 : Step S104). The process of step S104 is an example of a prescribed process.

[0122] After the etching determination, the schedule changing unit 9033 determines whether to change the processing schedule of the substrate W ( Figure 6 :Step S105). Specifically, when the etching determination result of step S103 is a positive evaluation, the temperature distribution of the upper surface 21 of the substrate holding table 20 and the peripheral area PA1 is in a good state. Therefore, the schedule change unit 9033 may also determine in step S105 that there is no need to change the processing schedule. In this case, the next step S106 and step S107 will be skipped.

[0123] If the etching determination result in step S103 is a negative evaluation, it can be considered that the temperature distribution of the upper surface 21 and the peripheral area PA1 of the substrate holding table 20 is not good for the etching process. Therefore, the schedule change unit 9033 can also determine in step S105 that the processing schedule needs to be changed. In this case, the next step S106 is performed.

[0124] Step S106 is a process for determining whether the schedule changing unit 9033 prohibits loading of the substrate W into the chamber 10. For example, if the characteristic value obtained in step S102 deviates from the judgment threshold value 914 by more than a predetermined value, it is determined that loading of the substrate W into the corresponding chamber 10 is prohibited. If loading is prohibited ("Yes" in step S106), the processing schedule is changed to prohibit loading ( Figure 6 : Step S106a). In addition, the schedule changing unit 9033 causes the display unit 92 to display a warning indicating that the import is prohibited and causes the notification unit 94 to make a notification ( Figure 6 : Step S106b). Then, the control unit 9 ends the etching process sequence.

[0125] In step S106, when the carrying-in of the substrate W is not prohibited ("No" in step S106), the schedule changing unit 9033 changes the processing schedule so as to delay the carrying-in time ( Figure 6 : Step S107). The processing of changing the transport schedule of steps S106a and S107 is an example of a predetermined processing performed according to the result of the etching determination.

[0126] Furthermore, when a negative evaluation is given in the etching determination in step S103 , the schedule changing unit 9033 may change the processing schedule so as to prohibit loading of the substrate W into the corresponding chamber 10 in general.

[0127] After the etching determination, the temperature control unit 9032 of the predetermined processing execution unit 903 determines whether to change the temperature of the peripheral area PA1 ( Figure 6 : Step S108). The determination may be made based on, for example, a comparison between the thermal image obtained in step S101 and a standard thermal image prepared in advance before the substrate is moved in (for example, a comparison between average values).

[0128] When the temperature control unit 9032 determines that the temperature should be changed ("Yes" in step S108), the temperature control unit 9032 changes the temperature according to the state of the thermal image ( Figure 6 :Step S109). For example, when the thermal image indicates a temperature higher than the standard, the heat source 25 will reduce the amount of heat supplied to the substrate holding table 20, and in the opposite case, the heat source 25 will increase the amount of heat supplied to the substrate holding table 20. In this way, the temperature control unit 9032 changes the temperature of the peripheral area PA1 and the upper surface 21 of the substrate holding table 20. The process of changing the temperature of the peripheral area PA1 is an example of a prescribed process implemented according to the result of the etching determination. When it is determined that the temperature control unit 9032 does not change the temperature ("No" in step S108), step S109 will be skipped.

[0129] Next, the main transfer robot 103 carries the substrate W to be etched into the chamber 10 ( Figure 6 : Step S110). The substrate W carried into the chamber 10 is held by the substrate holding table 20 ( Figure 6 : Step S111). Thus, the substrate W is placed at a predetermined position. In this state, the control unit 9 moves the nozzle 30 toward the processing position TP1, thereby setting the processing liquid to be supplied to the upper surface W1 of the substrate W.

[0130] When the substrate W is held by the substrate holding stage 20, the rotation motor 22 starts to rotate the substrate W ( Figure 7 :Step S112). When the rotation speed of the substrate W reaches a predetermined rotation speed (for example, 300 rpm), the etching liquid supply unit 37 of the processing liquid supply unit 36 ​​supplies the etching liquid to the nozzle 30. Thus, the etching liquid is supplied from the nozzle 30 to the upper surface W1 of the substrate W ( Figure 7 : Step S113). The etching liquid supplied to the substrate W spreads to the entire upper surface W1 of the substrate W due to the rotation of the substrate W to form a liquid film. Thus, an etching reaction is performed on the entire upper surface W1.

[0131] During the supply of etching solution, thermal images ( Figure 7: Step S114). The thermal image generating unit 901 generates a thermal image from the shooting data of the thermal imager 70. The thermal image obtained at this stage includes information on the temperature distribution of the upper surface W1 of the substrate W and the peripheral area PA1.

[0132] When a thermal image is obtained, the characteristic value calculation unit 902 substitutes the thermal image into the relational expression 912 to calculate the characteristic value ( Figure 7 :Step S115). The relational expression 912 used here is a regression function generated from the data set of the thermal image and the etching amount in the etching liquid supply stage after the substrate is moved in. The thermal image is substituted into the relational expression 912, thereby obtaining the predicted value of the etching amount in the etching liquid supply stage. And, the characteristic value calculation unit 902 calculates the characteristic value for etching determination in the next step based on the predicted value obtained from the relational expression 912. The characteristic value is, for example, the in-plane average value Y of the etching amount (predicted value) Ave 、Surface range Y Ran .

[0133] When the characteristic value is calculated, the etching determination unit 9031 performs etching determination ( Figure 7 : Step S116). That is, the etching determination unit 9031 determines whether the etching process is good or not based on the comparison between the characteristic value obtained in step S102 and the determination threshold value 914. This determination process is similar to Figure 6 The step S103 shown is the same.

[0134] After the etching determination, the output control unit 9034 of the predetermined processing execution unit 903 executes processing for causing the display unit 92 to display or the notification unit 94 to notify the positive / negative evaluation according to the result of the etching determination ( Figure 7 : Step S117). The process of step S117 is an example of a prescribed process.

[0135] After the etching determination, the schedule changing unit 9033 determines whether to change the processing schedule according to the result of the etching determination ( Figure 7 :Step S118). If the etching determination result of step S103 is a positive evaluation, the temperature distribution of the upper surface W1 of the substrate W and the peripheral area PA1 is in a good state. In this case, the schedule change unit 9033 may also determine in step S118 that it is not necessary to change the processing schedule. In this case, the next step S119 will be skipped.

[0136] If the etching determination result in step S116 is a negative evaluation, it can be considered that the temperature distribution of the upper surface W1 of the substrate W and the peripheral area PA1 is not good for the etching process. Therefore, the schedule change unit 9033 can also determine in step S118 that the processing schedule needs to be changed. In this case, the schedule change unit 9033 changes the processing schedule so as to change the supply time of the etching solution ( Figure 7 :Step S119).

[0137] After the etching determination, the temperature control unit 9032 of the predetermined processing execution unit 903 determines whether to change the temperature of the peripheral area PA1 ( Figure 7 : Step S120). The determination may be made based on, for example, a comparison between the thermal image obtained in step S114 and a standard thermal image prepared in advance during the etching solution supply phase (eg, a comparison between average values).

[0138] When the temperature is determined to be changed (“Yes” in step S120), the temperature control unit 9032 changes the temperature according to the state of the thermal image ( Figure 7 :Step S121). For example, when the thermal image indicates a temperature higher than the standard, the heat source 25 will reduce the amount of heat supplied to the substrate holding table 20, and in the opposite case, the heat source 25 will increase the amount of heat supplied to the substrate holding table 20. In this way, the temperature control unit 9032 changes the temperature of the peripheral area PA1 and the upper surface W1 of the substrate W. The process of changing the temperature of the peripheral area PA1 is an example of a prescribed process implemented according to the result of the etching determination. When it is determined that the temperature control unit 9032 does not change the temperature ("No" in step S120), step S121 will be skipped.

[0139] After step S121, the control unit 9 controls the processing liquid supply unit 36 ​​according to the processing schedule to stop supplying the etching liquid to the nozzle 30 and start supplying the rinsing liquid. Thus, the rinsing liquid is supplied from the nozzle 30 to the upper surface W1 of the substrate W ( Figure 7 : Step S122). When the time specified in the processing schedule has passed, the control unit 9 stops supplying the rinse liquid to the nozzle 30.

[0140] When the supply of the rinse liquid is stopped, the control unit 9 performs a spin dry process ( Figure 7 : Step S123). That is, the control unit 9 controls the rotation motor 22 to increase the rotation speed. As a result, the rinse liquid remaining on the upper surface W1 of the substrate W is scattered radially outward. As a result, the upper surface W1 of the substrate W is dried. When the time specified in the processing schedule has passed, the control unit 9 stops the rotation of the substrate W.

[0141] When the spin-drying process is completed, the substrate holding table 20 releases the adsorption of the substrate W, thereby releasing the holding of the substrate W. Thereafter, the main transport robot 103 carries the substrate W out of the chamber 10 ( Figure 7 :Step S124).

[0142] <Effect>

[0143] According to the substrate processing apparatus 100, it is possible to obtain not only the temperature distribution of the occupied area occupied by the substrate W but also the temperature distribution of the peripheral area PA1 around the substrate W. The temperature distribution of the peripheral area PA1 is substituted into the relational expression 912, thereby calculating the characteristic value related to the predicted value of the etching amount. Therefore, the predicted etching amount can be calculated with high accuracy.

[0144] Furthermore, by obtaining the characteristic value related to the etching amount, various predetermined processes suitable for the etching process can be performed according to the temperature distribution of the peripheral area PA1 at each stage of the etching process.

[0145] <2. Second Embodiment>

[0146] In the following description, elements having the same functions as those of elements already described may be denoted by the same reference numerals or by reference numerals with additional alphabetical characters, and detailed descriptions thereof may be omitted.

[0147] Figure 8 1 is a diagram showing a cleaning processing unit 1 and a control unit 9A according to the second embodiment. The control unit 9A according to the second embodiment includes a characteristic value calculation unit 902A and a predetermined process execution unit 903A. The predetermined process execution unit 903A includes an etching determination unit 9031A.

[0148] The feature value calculation unit 902A calculates a feature vector as an arrangement of multiple feature quantities from the thermal image generated by the thermal image generation unit 901 as a feature value. As the feature quantity, for example, the sum of the pixel values ​​of the thermal image and the standard deviation of the pixel values ​​can be used. In addition, the pixel value of each pixel of the thermal image can also be directly used as a feature vector.

[0149] The etching determination unit 9031A uses a classifier K2 that classifies between a good etching class and a bad etching class to perform etching determination based on the feature vector calculated from the thermal image. The good etching class is a class indicating that the etching process is good, and the bad etching class is a class indicating that the etching process is bad. In the case where the thermal image of the classification object is classified as the good etching class, the etching determination unit 9031A assigns a positive evaluation. In the case where the thermal image of the classification object is classified as the bad etching class, the etching determination unit 9031A assigns a negative evaluation.

[0150] Similar to the case of obtaining the relational expression 912 in the first embodiment, etching processing is performed under different conditions in the cleaning processing unit 1, and a classifier K2 is generated by machine learning using the thermal image (temperature distribution) obtained at that time and the data set of the etching amount of the substrate W. Specifically, training data is prepared for each thermal image, and the training data teaches the level of the result based on the etching amount. In the case of teaching the level of the thermal image, as long as the actual etching amount is good, a good etching level can be taught, and conversely, a poor etching level can be taught. Thus, training data consisting of a plurality of groups of thermal images (specifically, feature vectors) and the taught levels can be prepared in advance. Then, the classifier K2 is generated by performing machine learning using the training data. As machine learning, well-known methods such as neural networks, decision trees, support vector machines (SVM; Support Vector Machine), and discriminant analysis can also be used.

[0151] The generation unit for generating the classifier K2 by machine learning may be provided by the substrate processing apparatus 100, or may be provided in a device (server, etc.) outside the substrate processing apparatus 100. In the latter case, the classifier K2 may be provided to the substrate processing apparatus 100 via a network or various portable media.

[0152] According to the substrate processing apparatus 100 of this embodiment, a feature vector can be calculated from the thermal image of the area including the peripheral area PA1 as a feature value, and good or bad etching can be determined based on the feature vector. Therefore, the good or bad etching can be determined with high accuracy at each stage of the etching process. In addition, a prescribed process suitable for the etching process can be performed according to the result of the etching determination.

[0153] Although the present invention is described in detail, the above description is only for illustration in all aspects, and the present invention is not limited thereto. It can be interpreted that numerous variations that are not illustrated can be assumed without departing from the scope of the present invention. The various structures described in the above-mentioned various embodiments and various variations can be appropriately combined or omitted as long as they do not contradict each other.

[0154] Explanation of symbols

[0155] 1: Cleaning unit

[0156] 10: Chamber

[0157] 11: Sidewall

[0158] 20: Substrate holding table

[0159] 21: Upper surface

[0160] 22: Rotary motor

[0161] 25: Heat Source

[0162] 30: Nozzle

[0163] 36: Processing liquid supply unit

[0164] 37: Etching liquid supply unit

[0165] 40: Processing cup

[0166] 70: Thermal Imager

[0167] 9.9A: Control Department

[0168] 91: Storage

[0169] 92: Display unit

[0170] 93: Operation Department

[0171] 94: Notification Department

[0172] 901: Thermal image generation unit

[0173] 902, 902A: Eigenvalue calculation unit

[0174] 903, 903A: Regulation Processing Execution Department

[0175] 9031, 9031A: Etching determination unit

[0176] 9032: Temperature control department

[0177] 9033: Schedule Change Department

[0178] 9034: Output control unit

[0179] 904: Relational Generation Department

[0180] 912: Relationship (regression function)

[0181] 914: Judgment threshold

[0182] 100: Substrate processing device

[0183] 103: Main handling robot

[0184] Ax1: Rotation axis

[0185] K2: Classifier

[0186] PA: Photographing area

[0187] PA1: Surrounding area

[0188] TH1: Thermal Image

[0189] TS1: Processing Space

[0190] W: substrate

[0191] W1: upper surface

[0192] Y Ave :Average value within the surface (eigenvalue)

[0193] Y Ran : In-plane range (eigenvalue)

[0194] Y i :Etching amount

[0195] r i : Radius distance.

Claims

1. A substrate processing device, which performs etching processing on a substrate, characterized in that: The substrate processing device comprises: a chamber having a processing space therein; a substrate holding portion for holding a substrate at a predetermined position in the chamber; an etching liquid supplying unit that supplies etching liquid to the substrate held by the substrate holding unit; a rotating portion that rotates the substrate holding portion around a predetermined rotation axis; a temperature distribution acquisition unit that acquires a temperature distribution of a peripheral region around a substrate region occupied by the substrate when the substrate is disposed at the predetermined position in the chamber; and A characteristic value calculation unit calculates a characteristic value related to an etching amount of the substrate due to an etching process using the etching liquid from the temperature distribution.

2. The substrate processing device according to claim 1, characterized in that: The substrate processing apparatus further includes an etching determination unit configured to determine whether the etching process performed on the substrate is good or not based on a comparison between the characteristic value and a threshold value determined in advance.

3. The substrate processing device according to claim 1 or 2, characterized in that: The characteristic value calculation unit calculates the characteristic value from a relational expression indicating a relationship between the temperature distribution and the etching amount.

4. The substrate processing device according to claim 3, characterized in that: The substrate processing apparatus further includes a relational expression generating unit configured to generate the relational expression based on the temperature distribution at a predetermined timing in the etching process and an etching amount of the substrate after the etching process.

5. The substrate processing device according to claim 4, characterized in that: The characteristic value calculation unit calculates the characteristic value by substituting the temperature distribution at a timing corresponding to the predetermined timing in the etching process into the relational expression.

6. The substrate processing device according to claim 3, characterized in that: The etching amount is an etching amount on each circle with different radii centered on the rotation axis.

7. The substrate processing device according to claim 1 or 2, characterized in that: The temperature distribution acquisition unit includes: a thermal imager that includes a region where a substrate held by the substrate holding unit is arranged within a photographing region; The temperature distribution is a thermal image.

8. The substrate processing device according to claim 6, characterized in that: The temperature distribution acquisition unit includes: a thermal imager that includes a region where a substrate held by the substrate holding unit is arranged within a photographing region; The temperature distribution is a thermal image, The relationship is a regression function, which takes the temperature indicated by each pixel value constituting the thermal image as an independent variable and takes the etching amount on each circle with different radii as a dependent variable.

9. The substrate processing device according to claim 1 or 2, characterized in that: The characteristic value calculation unit calculates the characteristic value from the temperature distribution acquired in a state where the substrate holding unit does not hold the substrate.

10. The substrate processing apparatus according to claim 9, wherein: The substrate processing apparatus further includes a temperature changing unit configured to change the temperature of the substrate disposed at the predetermined position and the peripheral region based on the characteristic value.

11. The substrate processing apparatus according to claim 9, wherein: The substrate processing apparatus further includes a schedule changing unit configured to change a schedule defining a time to carry the substrate into the chamber based on the characteristic value.

12. The substrate processing apparatus according to claim 1 or 2, characterized in that: The characteristic value calculation unit calculates the characteristic value from the temperature distribution acquired in a state where the substrate holding unit holds the substrate.

13. The substrate processing apparatus according to claim 12, wherein: The substrate processing apparatus further includes a temperature changing unit configured to change the temperature of the substrate disposed at the predetermined position and the peripheral region based on the characteristic value.

14. The substrate processing apparatus according to claim 12, wherein: The substrate processing apparatus further includes a schedule changing unit configured to change a schedule defining a time to carry the substrate into the chamber based on the characteristic value.

15. A substrate processing method, characterized in that: The following steps are included: a) maintaining the substrate at a predetermined position in the chamber; b) rotating the substrate located at the predetermined position in step a) around a rotation axis; c) supplying etching liquid to the surface of the substrate rotated by step b); d) obtaining a temperature distribution of a peripheral area around a substrate area occupied by the substrate when the substrate is arranged at the predetermined position in the chamber; and e) calculating a characteristic value from the temperature distribution acquired in step d), the characteristic value being used to evaluate an etching process performed on the substrate using the etching solution.

Images