A voltage-to-voltage converter is used to apply a positive feedback voltage to an electromechanical sensor to promote a reduction in the charge flow in the sensor that indicates a softening spring.

Abstract

This article proposes reducing the sensitivity of an electromechanical sensor. The electromechanical sensor includes sensitivity to changes in the mechanical-electrical gain of a sensing element of the electromechanical sensor; and a voltage-to-voltage converter component that minimizes the sensitivity by coupling a positive feedback voltage to a sensing electrode of the sensing element via a defined feedback capacitor. The sensing element is electrically coupled to the input of the voltage-to-voltage converter component. In one example, the voltage-to-voltage converter component minimizes the sensitivity by maintaining a constant charge at the sensing electrode via a defined feedback capacitor. In another example, the electromechanical sensor includes a capacitive sensing element including a first node having a sensing electrode. In addition, a bias voltage component can apply a bias voltage to a second node of the electromechanical sensor. In yet another example, the electromechanical sensor includes a piezoelectric sensing element.

Description

[0001] Related Applications

[0002] This patent application claims priority to U.S. Provisional Patent Application No. 62 / 718,954, filed on August 14, 2018, entitled "Gyroscopic Sensing Amplification Architecture for Eliminating Spring Softening Effects by Applying a Constant Charge" and priority to U.S. Non-Provisional Patent Application No. 16 / 460,901, filed on July 2, 2019, entitled "Applying a Positive Feedback Voltage to an Electromechanical Sensor Using a Voltage-to-Voltage Converter to Facilitate Reduction of Charge Flow in the Sensor Representing Spring Softening," the entire contents of each application are incorporated herein by reference. Technical Field

[0003] The present invention generally relates to embodiments utilizing a voltage-to-voltage (V2V) converter to apply a positive feedback voltage to an electromechanical sensor to facilitate a reduction in charge flow in the sensor that represents a softening of a spring. Background Art

[0004] Conventional sensor technology is susceptible to changes in the sensitivity of the electromechanical sensing element of the sensor caused by die stress, such as changes caused by assembly changes of the corresponding device, changes in the operating temperature of the corresponding device, changes in the operation of the corresponding device over time, etc. In this regard, the change in sensitivity can represent a "spring softening" effect on the electromechanical sensing element, which changes the resonant frequency and gain of the element. In addition, conventional sensor technology that utilizes a charge-to-voltage (C2V) architecture to maintain a constant voltage across the sensing gap of a capacitance-based sensing element can further increase the spring softening effect on the element. In this regard, conventional sensor technology has several disadvantages, some of which can be noted with reference to the various embodiments described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Non-limiting embodiments of the present disclosure are described with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various views unless otherwise specified;

[0006] Figure 1 shows a block diagram of a sensor system that utilizes a V2V converter to apply a positive feedback voltage to an electromechanical sensor to facilitate a reduction in charge flow in the sensor, according to various exemplary embodiments;

[0007] Figure 2 A block diagram of a sensor system utilizing a V2V converter to apply a positive feedback voltage to an electromechanical sensor including a capacitive sensing element biased by a bias voltage component is shown according to various exemplary embodiments;

[0008] Figure 3A block diagram of a sensor system for applying a positive feedback voltage to an electromechanical sensor including a piezoelectric sensing element using a V2V converter according to various exemplary embodiments is shown;

[0009] Figure 4 A block diagram of a sensor system according to various exemplary embodiments is shown, the sensor system including a V2V converter component that uses a bootstrap buffer to bootstrap a shield capacitance of the sensor to a sensing node voltage of the sensor, thereby applying a positive feedback voltage to a capacitive sensing element;

[0010] Figure 5 shows a block diagram of a sensor system including a V2V converter assembly that applies a positive feedback voltage to a capacitive sensing element using a bootstrap buffer that is electrically connected through an input capacitor to an inverting amplifier including a negative gain proportional to the input capacitance, according to various example embodiments;

[0011] Figure 6 A block diagram of another sensor system according to various example embodiments is shown, the sensor system including a V2V converter component that applies a positive feedback voltage to a capacitive sensing element using a bootstrap buffer that is electrically connected to an inverting amplifier through an input capacitor, the inverting amplifier including a negative gain proportional to the input capacitance;

[0012] Figure 7 shows a block diagram of a sensor system including a V2V converter assembly that applies a positive feedback voltage to a capacitive sensing element using an inverting amplifier that includes a negative gain proportional to an input capacitance electrically connected between an output of the capacitive sensing element and an input of the inverting amplifier, according to various example embodiments;

[0013] Figure 8 A block diagram of another sensor system according to various example embodiments is shown, the sensor system including a V2V converter component that applies a positive feedback voltage to a capacitive sensing element using an inverting amplifier that includes a negative gain proportional to an input capacitance electrically connected between an output of the capacitive sensing element and an input of the inverting amplifier;

[0014] Fig. 9 shows a block diagram of a sensor system including a microphone according to various example embodiments;

[0015] Fig.10shows a block diagram of a sensor system including a V2V component having a differential amplifier according to various exemplary embodiments;

[0016] Fig.11 A flow chart illustrating a method associated with minimizing the sensitivity of a sensing element of an electromechanical sensor relative to a change in the mechatronic gain of the sensing element according to various example embodiments;

[0017] Fig.12 A flow chart illustrating a method associated with minimizing the sensitivity of a sensing element in response to a modification of a bias voltage applied to the sensing element according to various example embodiments;

[0018] Fig.13 A flow chart illustrating a method associated with minimizing the sensitivity of a sensing element in response to a modification of the value of a defined feedback capacitance that has been used to apply a positive feedback voltage to the sensing element according to various exemplary embodiments;

[0019] Fig.14 A flow chart showing a method associated with minimizing the sensitivity of a sensing element in response to modification of an amplifier feedback capacitance coupled between an input of an inverting amplifier of an electromechanical sensor and an output of the inverting amplifier according to various example embodiments; and

[0020] Fig.15 A motion system is shown according to various example embodiments, the motion system including a sensor architecture that utilizes a V2V converter to apply a positive feedback voltage to the sensor to facilitate a reduction in charge flow in the sensor. DETAILED DESCRIPTION

[0021] Various aspects of the present invention will be described more fully below with reference to the accompanying drawings, in which exemplary embodiments are shown. In the following description, for the purpose of explanation, many specific details are set forth in order to provide a thorough understanding of various embodiments. However, the subject disclosure can be embodied in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein.

[0022] Conventional electromechanical sensor technology is very sensitive to mold stress, which can change the gain of the electromechanical sensing element of the corresponding sensor. For example, the mold stress can change, affect the spring softening of the electromechanical sensing element, etc., resulting in a change in the gain of the electromechanical sensing element. In addition, changes in the bias voltage applied to the electromechanical sensing element can change the gain of the electromechanical sensing element.

[0023] Furthermore, conventional sensor technology utilizing a C2V architecture to maintain a constant voltage across a sensing gap of a capacitive sensing element may further alter, modify, increase the spring softening of the electromechanical sensing element. On the other hand, various embodiments disclosed herein may reduce the sensitivity of a sensing element of an electromechanical sensor such as a gyroscope, accelerometer, etc., to changes in the mechanical-electrical gain of the sensing element by maintaining a constant charge at the sensing electrode of the electromechanical sensor - effectively eliminating the spring softening.

[0024] For example, a system (e.g., a gyroscope, accelerometer, etc.) may include an electromechanical sensor, e.g., which generates a current, charge flow, etc. in response to excitation, motion, etc. of such sensor. The sensitivity of the sensing element of the electromechanical sensor to changes in the mechanical-electrical gain of the sensing element may be caused by, for example, changes in bias voltage, changes in the manufacturing of the electromechanical sensor, changes in mold stress during assembly of the electromechanical sensor, changes in the operating conditions (temperature, humidity) of the electromechanical sensor during the operating life of such sensor, etc. Such changes in gain may represent a spring softening effect, e.g., caused by changes in the distance or gap between sensing nodes, elements, etc. of the electromechanical sensor, which occurs over time; caused by surface voltages generated over time at sensing nodes, elements, etc. of the electromechanical sensor, etc., etc.

[0025] In this regard, the V2V converter component of the system can generate a positive feedback voltage through the output of the voltage-to-voltage converter component and minimize the sensitivity of the sensing element to changes in the mechanical-electrical gain by coupling the positive feedback voltage to a sensing electrode of a sensing element via a defined feedback capacitor, for example, maintaining a constant charge at the sensing electrode via the defined feedback capacitor - the sensing electrode is electrically coupled to the input of the voltage-to-voltage converter component.

[0026] In one embodiment, the electromechanical sensor comprises a piezoelectric sensing element having the sensing electrode.

[0027] In another embodiment, the electromechanical sensor includes a capacitive sensing element including a first node having the sensing electrode and a bias voltage component that applies a bias voltage to a second node of the capacitive sensing element. In other embodiments, for example, where the electromechanical sensor includes a microphone, the bias voltage component applies a bias voltage to the sensing electrode.

[0028] In one embodiment, the V2V converter component includes a unity-gain voltage buffer, which includes a gain of 1 within a defined error tolerance (eg, + / -1%). In addition, the input of the V2V converter component is electrically connected to the input of the unity-gain voltage buffer.

[0029] In one embodiment, the output of the unity gain voltage buffer is electrically connected to the output of the V2V converter component.

[0030] In another embodiment, the input of the unity gain voltage buffer is electrically connected to a first capacitor terminal of a defined shield capacitor of the system, e.g., corresponding to shield routing, e.g., an electrical trace of the system, helping to shield at least a portion of the sensing electrode from electromagnetic fields.

[0031] In addition, the output of the unity gain voltage buffer is electrically connected to the second capacitance terminal of the defined shielding capacitance - the unity gain voltage buffer includes a bootstrapping buffer. In this regard, the bootstrapping buffer is used to bootstrap the shield wiring to the voltage of the sensing electrode to eliminate, substantially reduce (e.g., by more than 95%) the charge change at the sensing electrode due to the parasitic capacitance of the shield wiring.

[0032] In yet another embodiment, the V2V converter assembly further comprises: a defined input capacitance; a defined amplifier feedback capacitance; and an inverting amplifier comprising a defined negative gain represented by a ratio of the defined input capacitance to the defined amplifier feedback capacitance. In this regard, the defined input capacitance is electrically coupled between an output of the unity gain voltage buffer and an input of the inverting amplifier; and the defined amplifier feedback capacitance is electrically coupled between an input of the inverting amplifier and an output of the inverting amplifier.

[0033] In addition, the V2V converter component includes a unity gain inverting voltage buffer, which includes a gain of negative 1 within a defined error tolerance (e.g., within 1%). In this regard, the output of the inverting amplifier is electrically connected to the input of the unity gain inverting voltage buffer, and the output of the unity gain inverting voltage buffer is electrically connected to the output of the V2V converter component.

[0034] In other embodiments, the inverting amplifier may include a differential amplifier having defined input capacitances of the system electrically coupled between the respective sensing electrodes of the sensing element and the respective differential inputs of the differential amplifier - the voltage-to-voltage converter component minimizes the sensitivity of the sensing element relative to changes in the mechanical-electrical gain of the sensing element by coupling a positive differential feedback voltage to the respective sensing electrodes of the sensing element via respective defined feedback capacitances. In this regard, the corresponding gain of the differential amplifier may be inverted by switching the output of the differential amplifier connected to the differential input of the next stage, amplifier stage, capacitance stage, etc. Thus, the unit gain inverting voltage buffer need not be used. Further, it should be understood that when utilizing the differential amplifier, the capacitive sensing element includes differential sensing electrodes, respective sensing electrodes, etc., wherein the respective capacitive sensing elements are connected to the respective differential inputs of the differential amplifier.

[0035] In an embodiment, each defined amplifier feedback capacitor is electrically coupled between each differential input of the differential amplifier and each output of the differential amplifier. In addition, each defined feedback capacitor is electrically coupled between each output of the differential amplifier and each sensing electrode of the sensing element.

[0036] In one embodiment, a defined parasitic capacitance is electrically connected to an input of the V2V converter component.

[0037] In one embodiment, the value of the defined feedback capacitance is proportional to the defined parasitic capacitance based on a defined negative gain of the inverting amplifier.

[0038] In other embodiments, the inputs of the inverting amplifier are coupled via coupling capacitors to a defined self-test voltage that helps to generate a force on a proof mass of the sensor and / or to a defined quadrature cancellation voltage that helps to reduce the value of the quadrature portion of the output of the unity gain voltage buffer.

[0039] In another embodiment, the system does not use the bootstrap buffer, and the defined parasitic capacitance is electrically connected to the defined input capacitance, which is electrically coupled to the input of the inverting amplifier. In this regard, the defined parasitic capacitance includes the defined shielding capacitance corresponding to at least one electrical trace of the system, which helps shield at least a portion of the sensing electrode from the electromagnetic field. Furthermore, unlike the embodiment including the bootstrap buffer, the value of the defined feedback capacitance is proportional to the sum of the defined parasitic capacitance and the defined input capacitance based on a defined negative gain of the inverting amplifier.

[0040] In one embodiment, a method may include detecting, by a system having a MEMS sensor, the sensitivity of a sensing element, an electromechanical sensing element, etc. of the MEMS sensor relative to a change in an electromechanical gain of the sensing element; and utilizing a V2V converter of the system to couple a positive feedback voltage to the sensing element through a defined feedback capacitor to minimize the sensitivity of the sensing element.

[0041] In an embodiment, said minimizing said sensitivity comprises maintaining a constant charge at said sensing element via said V2V converter.

[0042] In another embodiment, a method may include modifying, by the system, a bias voltage applied to the sensing element, and minimizing, by the system, a sensitivity of the sensing element relative to a change in the electromechanical gain of the sensing element in response to the modifying the bias voltage.

[0043] In this regard, in various embodiments, the method may include modifying the bias voltage, for example, sweeping the bias voltage across various frequencies, and determining, by the system, a change in the resonant frequency of the sensing element in response to the modification, sweeping, etc. of the bias voltage - the resonant frequency corresponding to the determined global maximum value of the magnitude of the output voltage of the sensor based on the MEMS. Conversely, the method may include modifying, by the system, a value of the defined feedback capacitor that has been used to apply the positive feedback voltage to the sensing element to minimize the change in the resonant frequency of the sensing element.

[0044] In other embodiments, the method may include modifying, by the system, a negative gain of an inverting amplifier of the MEMS-based sensor via an amplifier feedback capacitance coupled between an input of the inverting amplifier and an output of the inverting amplifier to minimize the change in the resonant frequency of the sensing element.

[0045] As described above, conventional sensor technologies are susceptible to sensitivity variations of electromechanical sensing elements, e.g., due to variations in bias voltage applied to such elements, due to variations in mold stress, e.g., variations caused by variations in assembly, operating conditions, and / or operation of the respective device over time, e.g., sensitivity variations representing spring-softening effects on electromechanical sensing elements that change the resonant frequency and gain of the sensing elements, e.g., caused by variations in the distance or sensing gap between sensing nodes, elements, etc. of a capacitive-based sensing element over time; caused by surface voltages generated by sensing nodes, elements, etc. of a capacitive-based sensing element over time, etc. Furthermore, conventional sensor technologies utilizing a C2V architecture to maintain a constant voltage across the sensing gap may further increase the spring-softening effects on the capacitive-based sensing elements.

[0046] On the other hand, various embodiments disclosed herein can reduce the variation in sensitivity of electromechanical sensors such as gyroscopes, accelerometers, etc. by maintaining a constant charge at the sensing elements, electrodes, of such sensors - effectively eliminating the spring softening effect. In this regard, reference is now made to Figure 1 , the sensor system 100 may include an electromechanical sensor 110, such as a capacitance-based sensor, a piezoelectric-based sensor, etc., which includes a sensitivity that may change, vary, etc. due to, for example, changes in bias voltage of such sensors, due to manufacturing and / or mold stress changes during assembly of such sensors, and due to changes in operating conditions during operation of such sensors, such as temperature, humidity, etc.

[0047] Alternatively, the sensor system may include a V2V converter component 130 that may be coupled between the V2V converter component and a sensing electrode voltage (“V sense ”) between the sensing electrodes, the feedback capacitor 140 converts the positive feedback voltage (“V out ”) is coupled to the sensing electrode so as to, for example, maintain a constant charge at the sensing electrode, node, etc. to minimize, reduce, etc., changes in the sensitivity of the electromechanical sensor.

[0048] exist Figure 2 In the illustrated embodiment, the electromechanical sensor may include a sensing capacitor 220 (see “C sense ”) and a bias voltage component 210 that can apply a bias voltage to another electrode, node, etc. of the sensing capacitor. Figure 3 In other embodiments shown, the sensor may include a piezoelectric sensor 310 including sensing electrodes.

[0049] Reference now Figure 4, the V2V converter component may include a unity gain voltage buffer 410 that includes a gain of 1 within a defined error tolerance (e.g., 1%). In addition, the input of the V2V converter component may be electrically connected to (including, etc.) the input of the unity gain voltage buffer. Conversely, the input of the unity gain voltage buffer may be electrically connected to a defined shielding capacitor (“C sh ”), and the output of the unity gain voltage buffer can be electrically connected to the second terminal, node, etc. of the defined shielding capacitor.

[0050] In this regard, the defined shielding capacitance may correspond to a shielding parasitic capacitance of at least one electrical trace of the system, the shielding parasitic capacitance being directed to shield at least a portion of the sensing electrode from electromagnetic fields. In addition, the unity gain voltage buffer includes a bootstrap buffer that "bootstraps" the defined shielding capacitance to the sensing electrode to eliminate, reduce, etc. any change in charge of the sensing node due to the shielding parasitic capacitance.

[0051] exist Figure 5 In the illustrated embodiment, the V2V converter assembly may further include an inverting amplifier 510 including an input capacitor (“C in The defined negative gain (“A”) is expressed by the ratio of the defined amplifier feedback capacitance (“Cfb”) - where -A = -C in / C fb In this regard, the defined input capacitance is electrically coupled between the output of the unity gain voltage buffer and the input of the inverting amplifier; and the defined amplifier feedback capacitance is electrically coupled between the input of the inverting amplifier and the output of the inverting amplifier.

[0052] In various embodiments, the defined amplifier feedback capacitance may be selected, programmed, etc., by programmable (e.g., one-time programmable) fuses that may connect selected capacitors of a programmable array of capacitors (not shown) together to create, form, etc. the defined amplifier feedback capacitance. In this regard, a defined negative gain may be selected, programmed, etc., for example, during manufacture of the sensor system.

[0053] In addition, the V2V converter component includes a unity gain inverting voltage buffer 520, which includes a gain of negative 1 within a defined error tolerance (e.g., 1%). In this regard, the output of the inverting amplifier is electrically connected to the input of the unity gain inverting voltage buffer, and the output of the unity gain inverting voltage buffer is electrically connected to the output of the V2V converter component.

[0054] Further Figure 5As shown, the sensor system may include a defined parasitic capacitance (“C p In various embodiments, the feedback capacitor (“C c ”) is proportional to the defined parasitic capacitance based on the defined negative gain of the inverting amplifier - where C c =C p / (1–A), e.g., to form a “negative capacitance” coupling the output of the V2V converter component to the sensing electrode, node, etc. In this regard, the value of the defined feedback capacitance may be selected, programmed, etc. based on the value of the defined negative gain selected, programmed, etc., by programmable (e.g., one-time programmable) fuses that may connect selected capacitors from a programmable array of capacitors (not shown) together to create, form, etc. the defined feedback capacitance. In various embodiments, e.g., during manufacture of the sensor system, the defined feedback capacitance may be selected, programmed, e.g., to tune a frequency corresponding to the sensing electrode, e.g., which corresponds to a drive frequency of the detection mass of the sensor.

[0055] Figure 6 An embodiment of a sensor system is shown, wherein the input of the inverting amplifier is coupled to a defined self-test voltage (“V c ”). In this regard, the defined self-test voltage may be used to introduce, inject, etc., a defined quadrature cancellation voltage at the input of the unity gain voltage buffer, for example, to reduce the value of the quadrature signal swing that reduces the headroom of the unity gain voltage buffer and thereby improve how close the output of the unity gain voltage buffer can swing to the power supply of the unity gain voltage buffer.

[0056] In other embodiments, a defined self-test voltage may be used to generate a defined force or a defined sensing gap displacement on a sensing element (e.g., a detection mass) of the sensor, for example, to perform a "self-test" on the sensor, for example, to compare a detected voltage value (e.g., obtained by sensing electrodes corresponding to various parts, stages, etc. of a V2V converter component, feedback capacitor, etc.) with an expected voltage value (e.g., a voltage value that has been determined to be generated based on the defined sensing gap displacement, etc.).

[0057] In one embodiment, the frequency response of the proof mass may be determined by sweeping the values ​​of a defined self-test voltage and detecting the resulting voltage values ​​at the sensing electrodes corresponding to various portions, states, etc. of the V2V converter components, feedback capacitors, etc.

[0058] Figure 7 and Figure 8An embodiment of a sensor system that does not include a bootstrap buffer, utilizing a bootstrap buffer, is shown, and a defined parasitic capacitance is electrically connected to a defined input capacitance that is electrically coupled to an input of an inverting amplifier. In this regard, the defined parasitic capacitance includes a defined shielding capacitance that corresponds to at least one electrical trace of the system that helps shield at least a portion of a sensing electrode from electromagnetic fields. Furthermore, unlike embodiments that include a bootstrap buffer, a value of the defined feedback capacitance is proportional to a sum of the defined parasitic capacitance and the defined input capacitance based on a defined negative gain of the inverting amplifier.

[0059] Fig. 9 9 shows a block diagram of a sensor system 900 including an electromechanical sensor 110 having a microphone 910 according to various exemplary embodiments. The microphone includes a sensing capacitor (see “C sense ”), and the bias voltage component 210 is connected via a bias resistor (“R bias ”) applies a bias voltage (e.g., “V bias ”).

[0060] In turn, the sensor system includes a V2V converter component 130 that couples a positive feedback voltage to the sensing electrode via a feedback capacitor 140 coupled between the V2V converter component and the sensing electrode, for example, to maintain a constant charge at the sensing electrode. In this regard, the V2V converter component includes a unity gain voltage buffer 920 that includes a gain of 1 within a defined error tolerance (e.g., 1%). Additionally, an input of the V2V converter component is electrically connected to (including) an input of the unity gain voltage buffer. An output of the unity gain voltage buffer is electrically connected to a non-inverting input of a differential amplifier 940 and is coupled to a differential amplifier 940 via a defined input capacitor (“C in ”) is electrically coupled to an inverting amplifier 930. The inverting amplifier includes a defined negative gain (“A”) which is controlled by a defined input capacitance (“C in ”) and the defined amplifier feedback capacitance (“C fb ”) ratio represents - where A = -C in / C fb In this regard, the amplifier feedback capacitance is defined to be electrically coupled between the input of the inverting amplifier and the output of the inverting amplifier.

[0061] The defined amplifier feedback capacitance may be selected, programmed, etc., by programmable (e.g., one-time programmable) fuses that may connect selected capacitors of a programmable array of capacitors (not shown) together to create, form, etc. the defined amplifier feedback capacitance. In this regard, the defined negative gain may be selected, programmed, etc., for example, during manufacture of the sensor system. Furthermore, the output of the inverting amplifier is electrically connected to the inverting input of the differential amplifier, and the output of the differential amplifier is electrically connected to the output of the V2V converter assembly.

[0062] like Fig. 9 As further shown, the sensor system may include a defined parasitic capacitance (“C p In the embodiment, the feedback capacitor (“C c ”) is proportional to the defined parasitic capacitance based on the defined negative gain of the inverting amplifier - where C c =C p / (1–A), e.g., to form a “negative capacitance” coupling the output of the V2V converter assembly to the sensing electrode. In this regard, the value of the feedback capacitance may be selected, programmed, etc. based on the value of the selected, programmed, etc. defined negative gain, by programmable (e.g., one-time programmable) fuses that may connect selected capacitors of a programmable array of capacitors (not shown) together to create, form, etc. defined feedback capacitance. In an embodiment, e.g., during manufacture of the sensor system, the feedback capacitance may be selected, programmed, e.g., to tune a frequency corresponding to the sensing electrode, e.g., corresponding to a resonant frequency of a microphone membrane.

[0063] Fig.10 1 shows a block diagram of a sensor system 1000 including a V2V component 130 having a differential amplifier 1010 according to various example embodiments. Fig.10 As shown, the bias voltage component 210 can apply a bias voltage (V bias ).

[0064] In addition, the sensing electrodes of the various capacitors of the sensing element, proof mass, etc. are electrically coupled to each other via their own defined input capacitance (“C in ”) are electrically coupled to the differential inputs of the differential amplifier. Conversely, the defined amplifier feedback capacitors (“C fb ”) are electrically coupled between respective differential inputs of the differential amplifier and respective outputs of the differential amplifier - wherein the gain (“A”) of the differential amplifier is A=-C in / C fb .

[0065] like Fig.10 As further shown, each defined feedback capacitor (“C c ”) is electrically connected between each output of the differential amplifier and the sensing electrode. In this regard, based on the defined negative gain of the differential amplifier, the value of each defined feedback capacitor is equal to each defined parasitic capacitor (“C’) electrically connected to each differential input of the differential amplifier. p ”) is proportional to - where C c =(C' p +C in ) / (1–A), for example, to form a “negative capacitance” that couples each differential output to the sense electrode.

[0066] Figures 11 to 14 Methods according to the disclosed subject matter are shown. For ease of explanation, these methods are described as a series of actions. It should be understood and appreciated that the various embodiments disclosed herein are not limited by the actions shown and / or the order of actions. For example, the actions can occur in various orders and / or simultaneously, and occur together with other actions not presented or described herein. In addition, all the actions shown may not be required to implement the methods according to the disclosed subject matter. In addition, those skilled in the art will understand and appreciate that these methods can be represented as a series of interrelated states by respective state diagrams or events, respectively, alternatively.

[0067] Reference now Fig.11 , a flow chart of a method associated with minimizing the sensitivity of a sensing element of a MEMS sensor with respect to a change in a mechanical-electrical gain of the sensing element is shown, according to various example embodiments. At 1110, a system (e.g., a gyroscope, etc.) may detect the sensitivity with respect to a change in a mechanical-electrical gain of a sensing element of the MEMS sensor. At 1120, the system may minimize the sensitivity by coupling a positive feedback voltage to the sensing element via a defined feedback capacitance using a V2V converter of the system.

[0068] Fig.12 A flow chart of a method associated with minimizing the sensitivity of a sensing element in response to a modification of a bias voltage applied to the sensing element according to various example embodiments is shown. At 1210, the system can modify the bias voltage applied to the sensing element. At 1220, in response to the modified bias voltage, the system can minimize the sensitivity of the sensing element relative to a change in the mechanical-electrical gain of the sensing element.

[0069] For example, in Fig.13 In the flowchart shown, in response to modifying the bias voltage at 1310, the system can determine a change in the resonant frequency of the sensing element at 1320. Conversely, at 1330, the system can modify the defined feedback capacitance (“C c”), the defined feedback capacitor has been used to couple the positive feedback voltage to the sensing element to minimize the change of the resonant frequency of the sensing element.

[0070] exist Fig.14 In another example shown in the flowchart of FIG. 14 , in response to applying a bias voltage to a modified sensing element at 1410 and in response to determining a change in the resonant frequency of the sensing element at 1420, the system may, at 1430, couple an amplifier feedback capacitor (“C fb ”), modifying the negative gain of the inverting amplifier to minimize the change in the resonant frequency of the sensing element.

[0071] Fig.15 A motion system 1510, such as a gyroscope or the like, is shown according to various embodiments, which includes a sensor architecture that utilizes a V2V converter component 130 to couple a positive feedback voltage to a sensing element of a sensor 110 via a feedback capacitor to facilitate reducing charge flow in the sensor that indicates spring softening. In this regard, the motion system may utilize the storage component 1520 and the processing component 1530 to perform various operations described herein via the V2V converter component, such as, regarding the use and control of a defined self-test voltage to inject a defined orthogonal cancellation voltage at the input of a unity gain voltage buffer, for example, to reduce the value of the orthogonal signal swing that reduces the headroom of the unity gain voltage buffer; regarding the use and control of a defined self-test voltage, etc., to produce a defined force or a defined sensing gap displacement on a sensing element (e.g., a verification mass) of a sensor, for example, to perform a "self-test" on the sensor, for example, to compare a detected voltage value (e.g., obtained by sensing electrodes corresponding to various parts, stages, etc. of the V2V converter component, feedback capacitor, etc.) with an expected voltage value (e.g., a voltage value that has been determined to be generated based on a defined detection gap displacement, etc.).

[0072] In one embodiment, the motion system can utilize the storage component and the processing component to determine the frequency response of the detection quality by scanning the value of the defined self-test voltage and by detecting the various voltage values ​​obtained at the sensing electrodes corresponding to the various parts, states, etc. of the V2V converter component, feedback capacitor, etc.

[0073] As used in the subject specification, the term "component" refers to substantially any analog and / or digital based device, circuit, etc., including, for example, resistors, capacitors, transistors, diodes, inductors, memories, programmable devices (e.g., fuses), field programmable gate arrays (FPGAs), complex programmable logic devices (CPLDs), etc., that are related to performing the operations and / or functions of the circuits, devices, systems, etc. disclosed herein. In addition, the term "processing component" may refer to any computing processing unit or device (e.g., MAC, etc.), including but not limited to single-core processors; single-core processors with software multi-threaded execution capabilities; multi-core processors; multi-core processors with software multi-threaded execution capabilities; multi-core processors with hardware multi-threading technology; parallel platforms; and parallel platforms with distributed shared memory. In addition, a processor may refer to an integrated circuit, an ASIC, a digital signal processor (DSP), an FPGA, a programmable logic controller (PLC), a CPLD, discrete gate or transistor logic, discrete hardware components, analog circuits, or any combination thereof, which are designed to perform the functions and / or processes described herein. In addition, the processor may utilize nanoscale architectures, such as, but not limited to, molecular and quantum dot-based transistors, switches, and gates, in order to optimize space usage or enhance the performance of mobile devices. A processor may also be implemented as a combination of computing processing units, devices, and the like.

[0074] In the subject specification, the terms "memory", "storage component", and any other information storage component substantially related to the operation and function of the motion system (e.g., 1510) and / or device disclosed herein refer to a "storage component", or an entity embodied in a "memory", or a component that includes a memory. It should be understood that the memory may include volatile memory and / or non-volatile memory. As an illustration and not limitation, the volatile memory may include a random access memory (RAM) that may act as an external cache memory. As an illustration and not limitation, the RAM may include a synchronous RAM (SRAM), a dynamic RAM (DRAM), a synchronous DRAM (SDRAM), a double data rate SDRAM (DDR SDRAM), an enhanced SDRAM (ESDRAM), a synchronous link DRAM (SLDRAM), a direct Rambus RAM (RDRAM), a direct Rambus dynamic RAM (DRDRAM), and / or a Rambus dynamic RAM (RDRAM). In other embodiments, the non-volatile memory may include a read-only memory (ROM), a programmable ROM (PROM), an electrically programmable ROM (EPROM), an electrically erasable ROM (EEPROM), or a flash memory. Additionally, components and / or devices disclosed herein may include, without being limited to, these and any other suitable types of memory.

[0075] References in this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the various appearances of the phrase "in one embodiment" or "in an embodiment" in this specification do not necessarily refer to the same embodiment. Furthermore, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.

[0076] Furthermore, to the extent that the terms "include," "have," "include," and other similar words are used in the detailed description or the appended claims, these terms are intended to be inclusive in a manner similar to the term "comprise" as an open transition word, without excluding any additional or other elements. Furthermore, the term "or" is intended to be inclusive, not exclusive. That is, unless specified otherwise or clear from the context, "X employs A or B" is intended to mean any of the natural inclusive permutations. That is, if X employs A; X employs B; or X employs both A and B, then in any of the above cases, "X employs A or B" is satisfied. Furthermore, the terms "a" and "an" used in this application and the appended claims should generally be construed to mean "one or more," unless specified otherwise or clear from the context to be in the singular.

[0077] The aspects of the systems, instruments, devices, processes and process blocks explained herein may be embodied in hardware such as ASICs. In addition, the order in which some or all process blocks appear in each process should not be considered restrictive. On the contrary, those of ordinary skill in the art who benefit from the present invention will appreciate that some process blocks may be performed in various orders not shown.

[0078] In addition, the words "exemplary" and / or "illustrative" are used herein to refer to serving as examples, instances, or illustrations. For the avoidance of doubt, the subject matter disclosed herein is not limited to these examples. In addition, any aspect or design described herein as "exemplary" and / or "illustrative" is not necessarily to be construed as preferred or advantageous over other aspects or designs, nor is it meant to exclude equivalent exemplary structures and techniques known to those of ordinary skill in the art having the benefit of the present invention.

[0079] The above description of the illustrated embodiments of the present invention is not intended to be exhaustive or to limit the disclosed embodiments to the precise forms disclosed. Although specific embodiments and examples are described herein for illustrative purposes, various modifications considered within the scope of these embodiments and examples are possible, as recognized by those skilled in the relevant art.

[0080] In this regard, while the disclosed subject matter has been described in conjunction with various embodiments and corresponding figures, it should be understood that other similar embodiments may be used, or modifications and additions may be made to the described embodiments, to perform the same, similar, alternative, or similar operations without departing from the disclosed subject matter. Accordingly, the disclosed subject matter should not be limited to any single embodiment described herein, but rather should be interpreted in breadth and scope in accordance with the claims appended hereto.

Claims

1. A sensor system, comprising: Electromechanical sensors, including A sensing element including a first node including a sensing electrode; a bias voltage component that applies a bias voltage to a second node of the sensing element, the second node being different from the first node; and sensitivity to changes in the mechano-electrical gain of the sensing element, wherein the sensing element comprises a capacitive sensing element or a piezoelectric sensing element; and Voltage-to-voltage converter assemblies for: A positive feedback voltage is generated via an output of the voltage-to-voltage converter component, wherein the voltage-to-voltage converter component minimizes the sensitivity by coupling the positive feedback voltage to the sensing electrode via a defined feedback capacitor, wherein the sensing electrode is electrically coupled to an input of the voltage-to-voltage converter component, wherein the voltage-to-voltage converter component includes a defined input capacitor, a defined amplifier feedback capacitor, an inverting amplifier including a defined negative gain represented by a ratio of the defined input capacitor to the defined amplifier feedback capacitor, and a unity gain inverting voltage buffer including a negative gain of 1 within a defined error tolerance, wherein the output of the inverting amplifier is electrically coupled to the input of the unity gain inverting voltage buffer, wherein the output of the unity gain inverting voltage buffer is electrically coupled to the output of the voltage-to-voltage converter component, wherein the defined input capacitor is electrically coupled to the input of the inverting amplifier, and wherein the defined amplifier feedback capacitor is electrically coupled between the input of the inverting amplifier and the output of the inverting amplifier.

2. The sensor system according to claim 1, wherein: The voltage-to-voltage converter assembly minimizes the sensitivity by maintaining a constant charge at the sensing electrode via the defined feedback capacitance.

3. The sensor system according to claim 1, wherein: The voltage-to-voltage converter assembly further comprises: A unity gain voltage buffer is electrically coupled between the sensing electrode and the defined input capacitance, wherein the unity gain voltage buffer includes a gain of 1 within a defined error tolerance.

4. The sensor system according to claim 3, wherein: The input of the unity gain voltage buffer is electrically coupled to a first capacitive terminal of a defined shielding capacitance of the system, and wherein the output of the unity gain voltage buffer is electrically coupled to a second capacitive terminal of the defined shielding capacitance. 5 . The sensor system of claim 1 , further comprising a defined parasitic capacitance electrically coupled to the input of the voltage-to-voltage converter component.

6. The sensor system according to claim 5, wherein: A value of the defined feedback capacitance is proportional to the defined parasitic capacitance based on the defined negative gain of the inverting amplifier.

7. The sensor system according to claim 1, wherein: The input of the inverting amplifier is coupled via a coupling capacitor to a defined self-test voltage that facilitates generating a force on a proof mass of the electromechanical sensor.

8. A sensor system comprising: an electromechanical sensor, including sensitivity to changes in a mechatronic gain of a sensing element of the electromechanical sensor; and Voltage-to-voltage converter assemblies for: generating a positive feedback voltage via an output of the voltage-to-voltage converter component; and The sensitivity is minimized by coupling the positive feedback voltage to a sensing electrode of the sensing element via a defined feedback capacitance, wherein the sensing electrode is electrically coupled to an input of the voltage-to-voltage converter component, wherein the voltage-to-voltage converter component further comprises a defined input capacitance, a defined amplifier feedback capacitance, an inverting amplifier including a defined negative gain represented by a ratio of the defined input capacitance to the defined amplifier feedback capacitance, and a differential amplifier, wherein an output of the inverting amplifier is electrically coupled to a first input of the differential amplifier, wherein an output of the differential amplifier is electrically coupled to the output of the voltage-to-voltage converter component, wherein the defined input capacitance is electrically coupled between a second input of the differential amplifier and an input of the inverting amplifier, and wherein the defined amplifier feedback capacitance is electrically coupled between the input of the inverting amplifier and an output of the inverting amplifier.

9. The system according to claim 8, wherein: The voltage-to-voltage converter assembly further comprises: A unity gain voltage buffer is electrically coupled between the sensing electrode and the defined input capacitance, wherein the unity gain voltage buffer includes a gain of 1 within a defined error tolerance.

10. The system according to claim 9, further comprising: A bias voltage component generates a bias voltage; as well as A bias resistor is electrically coupled between the bias voltage and the sensing electrode.

11. A sensor system comprising: an electromechanical sensor, including sensitivity to changes in a mechatronic gain of a sensing element of the electromechanical sensor; and Voltage-to-voltage converter assemblies for: generating a positive feedback voltage via an output of the voltage-to-voltage converter component; and The sensitivity is minimized by coupling the positive feedback voltage to a sensing electrode of the sensing element via a defined feedback capacitance, wherein the sensing electrode is electrically coupled to an input of the voltage-to-voltage converter component, wherein the voltage-to-voltage converter component further comprises a defined input capacitance, a defined amplifier feedback capacitance, an inverting amplifier comprising a defined negative gain represented by a ratio of the defined input capacitance to the defined amplifier feedback capacitance, and a unity gain inverting voltage buffer comprising a negative gain of one within a defined error tolerance, wherein the output of the inverting amplifier is electrically coupled to the input of the unity gain inverting voltage buffer, wherein the output of the unity gain inverting voltage buffer is electrically coupled to the output of the voltage-to-voltage converter component, wherein the defined input capacitance is electrically coupled between the input of the voltage-to-voltage converter component and the input of the inverting amplifier, and wherein the defined amplifier feedback capacitance is electrically coupled between the input of the inverting amplifier and the output of the inverting amplifier.

12. The sensor system of claim 11, further comprising a defined parasitic capacitance electrically connected to the input of the voltage-to-voltage converter component.

13. The sensor system according to claim 12, wherein: The defined parasitic capacitance includes a defined shielding capacitance corresponding to at least one electrical trace of the system, the at least one electrical trace facilitating shielding at least a portion of the sensing electrode from electromagnetic fields.

14. The system according to claim 13, wherein: A value of the defined feedback capacitance is proportional to a sum of the defined parasitic capacitance and the defined input capacitance based on the defined negative gain of the inverting amplifier.

15. The system according to claim 11, wherein: The input of the inverting amplifier is coupled via a coupling capacitor to a defined self-test voltage that facilitates generating a force on a proof mass of the electromechanical sensor.

16. The system of claim 11, wherein: The input of the inverting amplifier is coupled to a defined quadrature cancellation voltage via a coupling capacitor, the defined quadrature cancellation voltage facilitating reduction of a value of a quadrature portion of the input of the inverting amplifier.

17. A sensor system comprising: A microelectromechanical system (MEMS) sensor, including sensitivity to changes in a mechano-electrical gain of a sensing element of the MEMS sensor; as well as a voltage-to-voltage converter assembly including a differential amplifier; wherein the voltage-to-voltage converter component minimizes the sensitivity to the changes in the mechanical-electrical gain of the sensing element by coupling a positive differential feedback voltage to respective sensing electrodes of the sensing element via respective defined feedback capacitors, wherein the respective sensing electrodes are electrically coupled to respective inputs of the voltage-to-voltage converter component, and wherein respective defined input capacitors of the system are electrically coupled between the respective sensing electrodes of the sensing element and respective differential inputs of the differential amplifier.

18. The system of claim 17, wherein: Respective defined amplifier feedback capacitors are electrically coupled between the respective differential inputs of the differential amplifier and the respective outputs of the differential amplifier, and wherein the respective defined feedback capacitors are electrically coupled between the respective outputs of the differential amplifier and the respective sensing electrodes of the sensing element.

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