A light-emitting display module

Abstract

The present invention discloses a light-emitting display module, comprising a plurality of light-emitting unit arrays, the light-emitting unit arrays comprising a plurality of inorganic light-emitting diode chips, through holes being regularly arranged on a carrier board, a pixel definition layer being arranged around the through holes on the light-emitting side of the carrier board, and the pixel definition layer being located between the inorganic light-emitting diode chips; a first metal layer being located on the light-emitting side of the carrier board, a second metal layer being located on the back of the carrier board, the second metal layer being injected into the through holes of the carrier board, but not penetrating to the light-emitting side of the carrier board; a first welding layer being in contact with the first metal layer located on the light-emitting side of the carrier board, and the second welding layer being in contact with the second metal layer in the through holes through the through holes of the carrier board; the contact surfaces of the first welding layer and the second welding layer facing outward are located at different heights on the same side, and a height difference is formed between the first welding layer and the second welding layer. The present invention can facilitate the positioning of the light-emitting diode chip when it is transferred to the carrier board, and is conducive to improving and increasing the yield rate of batch transfer.

Description

Technical Field

[0001] The present invention relates to the field of display devices, and in particular to a light-emitting display module. Background Art

[0002] The current mainstream near-field display technologies are LCD and OLED technologies. In the small-size market represented by mobile phone application displays, OLED technology has developed rapidly, but in the 50-65" medium- and large-size markets and 100" and large-size markets dominated by LCD, OLED still faces many obstacles to enter the market due to the life of blue light spots and overall cost issues. In addition, OLED has greatly increased requirements for process equipment at high PPI (>1000), and it is still difficult to break through. LCD, as a liquid crystal passive display technology, has defects in display effects, such as brightness, refresh rate, and viewing angle. In addition, liquid crystals need to be protected by glass panels. Large-size uniform glass panels are still a difficult problem that the industry needs to overcome.

[0003] In terms of far-field display, LED and DLP are the two main technologies. DLP technology has disadvantages such as poor contrast, high life and maintenance costs, and its market potential has been limited by the development of other display technologies. LED display technology was first used in the field of outdoor display. Driven by the development of inorganic compound semiconductor material technology and the advancement of LED chip technology, indoor display and small-pitch ultra-high-definition display are being widely used in the market. The LED industry follows Heitz's law, and the improvement of chip efficiency and miniaturization process make Mini / micro LED display technology a trend in the future new display field. Micro LED mainly miniaturizes and arrays the miniaturization process technology of traditional LED chips, and then transfers the crystal film to the circuit board in batches through mass transfer technology, uses physical deposition to manufacture a protective layer, and finally completes the packaging. In the existing technology, due to the small size of the chip, it is difficult to position it during transfer, resulting in low efficiency of batch transfer. Summary of the invention

[0004] The purpose of the present invention is to overcome the defects of the prior art and provide a light-emitting display module, which is conducive to the transfer and positioning of a large number of tiny LED chips, thereby improving the yield rate.

[0005] The object of the present invention is achieved as follows: a light-emitting display module, comprising a plurality of light-emitting unit arrays, the light-emitting unit arrays comprising a plurality of inorganic light-emitting diode chips, the inorganic light-emitting diode chips comprising a carrier, a first welding layer, a second welding layer, a first metal layer and a second metal layer; through holes are regularly arranged on the carrier, a pixel definition layer is arranged around the through holes on the light-emitting side of the carrier, and the pixel definition layer is located between the inorganic light-emitting diode chips; the first metal layer is located on the light-emitting side of the carrier, the second metal layer is located on the back of the carrier, the second metal layer is injected into the carrier through hole, but does not penetrate to the light-emitting side of the carrier; the first welding layer is in contact with the first metal layer on the light-emitting side of the carrier, and the second welding layer is in contact with the second metal layer in the through hole through the carrier through hole; the contact surfaces of the first welding layer and the second welding layer to the outside are located at different heights on the same side, and a height difference is formed between the first welding layer and the second welding layer; the carrier is also attached to an electric drive substrate, and the electric drive substrate is electrically connected to the carrier through the second metal layer.

[0006] The present invention adopts the above technical scheme, and compared with the prior art, the beneficial effects are as follows: the present invention arranges a through hole on the carrier, the first metal layer is located on the light-emitting side of the carrier, the second metal layer is located on the back of the carrier, the second metal layer is injected into the through hole of the carrier, the first welding layer contacts the first metal layer located on the light-emitting side of the carrier, and the second welding layer contacts the second metal layer in the through hole through the through hole of the carrier; the external contact surfaces of the first welding layer and the second welding layer are located at different heights on the same side, forming a height difference, and this concave-convex result is convenient for positioning the small chip, and at the same time, a pixel definition layer is provided between the electrodeless light-emitting diode chips, which reduces light interference and enhances light consistency. The present invention facilitates the transfer and positioning of large quantities of tiny LED chips, thereby improving the yield rate.

[0007] In order to facilitate the positioning of the small chip, reduce processing costs, and shorten etching time, the height difference H between the first welding layer and the second welding layer is in the range of 15 μm≤H≤100 μm.

[0008] In order to ensure the display effect of the light-emitting display module, the light-emitting unit array includes a transverse array and a longitudinal array, and the first welding layers of all inorganic light-emitting diode chips on the transverse array and the longitudinal array are electrically connected to each other through the first metal layer.

[0009] In order to ensure the diversity of the light-emitting display module, the inorganic light-emitting diode chip includes a single-color or three-color inorganic light-emitting diode chip.

[0010] In order to be used for display and backlighting to increase the illumination in a low light environment, the light emission wavelength of the monochromatic inorganic light emitting diode chip is within any 5 nm range of 380-680 nm.

[0011] In order to improve the display color performance of the light-emitting display module, the three-color inorganic light-emitting diode chip includes a light-emitting diode chip with a light-emitting wavelength of 455-475nm, a light-emitting diode chip with a light-emitting wavelength of 525-545nm and a light-emitting diode chip with a light-emitting wavelength of 615-625nm.

[0012] In order to make the light-emitting display module more transparent and more stable, the carrier is made of a transparent electrically insulating material.

[0013] In order to reduce light interference, enhance light consistency, and facilitate chip positioning, the pixel definition layer is made of transparent electrical insulating material.

[0014] In order to provide light-emitting control for the light-emitting unit, the electric drive substrate is a thin film transistor structure layer, and the second metal layer is electrically connected to a source or a drain in the thin film transistor structure layer.

[0015] In order to realize a light-emitting display module with better light transmittance, the channel material in the thin film transistor structure layer is a compound semiconductor material or an organic semiconductor material. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a front view schematic diagram of the first embodiment of the present invention.

[0017] Figure 2 It is a cross-sectional schematic diagram along the AA' direction of the light-emitting display module of the first embodiment.

[0018] Figure 3 for Figure 2 Schematic diagram of the position distribution of the first metal layer and the pixel definition layer in area Q.

[0019] Figure 4 for Figure 2 Schematic diagram of the position distribution of the first metal layer and the pixel definition layer in area Q.

[0020] Figure 5 for Figure 2 Schematic diagram of the position distribution of the first metal layer and the pixel definition layer in area Q.

[0021] Figure 6 It is a front view schematic diagram of the second embodiment of the present invention.

[0022] Figure 7 It is a cross-sectional schematic diagram along the BB' direction of the light-emitting display module of the second embodiment.

[0023] Figure 8 for Figure 7 Schematic diagram of the distribution of the first metal layer and the pixel definition layer in region R.

[0024] Fig. 9A cross-sectional view showing a distribution method of the first metal layer and the pixel definition layer of a three-color electrodeless light emitting diode chip.

[0025] Fig.10 for Figure 7 Schematic diagram of the distribution of the first metal layer and the pixel definition layer in region R.

[0026] Among them, 000 carrier board, 001a first metal layer, 001b second metal layer, 002a first welding layer, 002b second welding layer, 003 pixel definition layer, 004 sealing layer, 100 electric drive substrate, 10a red inorganic light emitting diode chip, 10b green inorganic light emitting diode chip, 10c blue inorganic light emitting diode chip. DETAILED DESCRIPTION

[0027] Embodiment 1, as Figure 1 A light-emitting display module shown in the figure includes a plurality of light-emitting unit arrays, the light-emitting unit arrays include a plurality of monochrome electrodeless light-emitting diode chips, the emission wavelength of the monochrome electrodeless light-emitting diode chips is within any 5nm range of 380-680nm, and the emission wavelength of the more preferred monochrome electrodeless light-emitting diode chips is within any 5nm range of 400-460nm; the monochrome electrodeless light-emitting diode chip in this embodiment is a gallium nitride light-emitting diode chip 10c with a wavelength of 455nm; the carrier board 000 is a transparent electrically insulating material, and the best is an ultra-thin glass with a thickness of less than 0.5mm; as Figure 2 As shown, the inorganic light emitting diode chip includes a carrier 000, a first welding layer 002a, a second welding layer 002b, a first metal layer 001a and a second metal layer 001b; the carrier 000 is formed with through holes by etching, and the through holes are regularly arranged on the carrier 000, and the first metal layer 001a is located around the upper surface of the through holes of the carrier 000, that is, the first metal layer 001a is located on the light-emitting side of the carrier 000, and its arrangement is generally placed on one side of the upper surface of the carrier 000 in a symmetrical continuous or symmetrical non-continuous manner, and the second metal layer 001b is located on the back of the carrier, and the second metal layer 001b is injected into the through holes of the carrier 000, but does not penetrate to the light-emitting side of the carrier, and a pixel definition layer 003 is arranged around the through holes on the light-emitting side of the carrier 000, wherein the pixel definition layer 003 is made of the same material as the carrier 000, which is a transparent electrically insulating material, and in this example is ultra-thin glass, and the pixel definition layer 003 is located between the inorganic light emitting diode chips 10c, for better explanation Figure 2 The relative positions of the first metal layer 001a, the pixel definition layer 003 and the first metal layer 001b in the dotted box Q area are shown in FIG. Figure 3-5 As shown, it is a top view schematic diagram of the carrier board 000 when the light-emitting diode chip is not soldered. Figure 3The first metal layer 001a is a discontinuous and non-enclosed metal placed around the through hole, and adjacent first metal layers 001a are connected through the metal layer on one side, and the number of connections is not limited to the three areas shown in the figure, and the pixel definition layer 003 is placed on both sides of the through hole of the second metal layer 001b; Figure 4 The first metal layer 001a is a metal ring that continuously closes the through hole, and the pixel definition layer 003 and the second metal layer 001b are connected to the Figure 3 same; Figure 5 The pixel definition layer 003 shown is a continuous closed pattern surrounding the through hole, and the first metal layer 001a is also a continuous closed metal ring surrounding the through hole. In this example, the pixel definition layer 003 is a small convex platform formed by etching the carrier 000; Figure 3-5 The substrate structure of the light-emitting diode chip, the first welding layer 002a and the second welding layer 002b are both located on one side of the insulating light-transmitting substrate, the light-emitting diode chip 10c also includes an electron conductive semiconductor layer, a light-emitting active layer, and a hole conductive semiconductor layer, the first welding layer 002a and the second welding layer 002b are at least electrically connected to the electron conductive semiconductor layer and the hole conductive semiconductor layer, respectively, and the connection method is not repeated here; the external contact surfaces of the first welding layer 002a and the second welding layer 002b are located at different heights on the same side, and a height difference is formed between the first welding layer 002a and the second welding layer 002b, and the height difference H between the first welding layer and the second welding layer is in the range of 15μm≤H≤100μm,

[0028] It is more preferable that the height difference range H is 30μm≤H≤100μm; in this embodiment, the height difference between the first welding layer 002a and the second welding layer 002b is 60μm, and the pixel definition layer 003 and the through hole filled with the second metal layer 001b are positioned, the first welding layer 002a of the gallium nitride light emitting diode chip 10c is in contact with the first metal layer 001a, and the second welding layer 002b is in contact with the second metal 001b and welded by ultrasonic hot pressing. After welding, the light emitting display module passes the test, and the sealing layer 004, i.e., the potting glue layer, is laid on the front; the control of the light emitting unit of the light emitting display module needs To achieve a light-emitting display module with better light transmittance, the distribution structure of the thin film transistor has no restriction requirements in the example of the present invention and will not be elaborated here. The light-emitting unit array includes a horizontal array and a vertical array. The first welding layers 002a of all the inorganic light-emitting diode chips on the horizontal array and the vertical array are electrically connected to each other through the first metal layer 001a.

[0029] Embodiment 2: Figure 6 A light-emitting display module includes a plurality of light-emitting unit arrays, wherein the light-emitting unit arrays include a plurality of three-color electrodeless light-emitting diode chips, including a red inorganic light-emitting diode chip 10a with a wavelength of 620nm, a gallium nitride green light-emitting diode chip 10b with a wavelength of 525nm, and a gallium nitride blue light-emitting diode chip 10c with a wavelength of 465nm; preferably, 10a is a red light-emitting diode chip with a sapphire substrate; the carrier 000 is a transparent electrically insulating material, which in this embodiment can be a PET film or a PI polyimide film, such as Figure 7 As shown, the three-color electrodeless light-emitting diode chips 10a, 10b, and 10c include a carrier 000, a first welding layer 002a, a second welding layer 002b, a first metal layer 001a, and a second metal layer 001b; the carrier 000 is etched to form through holes, and the through holes are regularly arranged on the carrier 000, the first metal layer 001a is located on the light-emitting side of the carrier 000, and the second metal layer 001b is located on the back of the carrier, and the second metal layer 001b is injected into the through holes of the carrier 000, but does not penetrate to the light-emitting side of the carrier, and the through holes on the light-emitting side of the carrier 000 are A pixel definition layer 003 is arranged around the hole, the first welding layer 002a contacts the first metal layer 001a located on the light-emitting side of the carrier 000, and the second welding layer 002b contacts the second metal layer 001b in the through hole through the through hole of the carrier 000; the external contact surfaces of the first welding layer 002a and the second welding layer 002b are located at different heights on the same side, and a height difference is formed between the first welding layer 002a and the second welding layer 002b; the height difference H between the first welding layer and the second welding layer ranges from 15μm≤H≤100μm,

[0030] More preferably, the height difference range H is 30 μm ≤ H ≤ 100 μm. In this embodiment, the height difference between the first welding layer 002a and the second welding layer 002b is 100 μm. Figure 7 The first welding layer 002a of the three-color electrodeless light-emitting diode chips 10a, 10b, and 10c is welded to the first metal layer 001a on the carrier 000 and electrically connected to each other. The welding dotted line area R near the first metal layer 001a on the carrier 000 is formed by Figure 8-10 to explain; Figure 8 It is disclosed that the first metal layer 001a passes through the bottom of the pixel definition layer 003 and is connected to the adjacent first metal layer 001a, so that the first welding layers 002a of the three-color electrodeless light-emitting diode chips 10a, 10b, and 10c are electrically connected to each other to form a common electrode; the pixel definition layer 003 is an insulating isolation layer or isolation belt, which can be a fiber filament not limited to SiO2; Fig. 9Another method of interconnecting the first metal layer 001a is disclosed, wherein the pixel definition layer 003 is made of the same material as the carrier 000, which is a transparent electrically insulating material, which may be a PET film or a PI polyimide film in this embodiment, and the pixel definition layer may be formed by embossing, and the first metal layer 001a goes over the top of the pixel definition layer 003 and is connected to the adjacent first metal layer 001a, so that the first welding layers 002a of the three-color electrodeless light-emitting diode chips 10a, 10b, and 10c are electrically connected to each other to form a common electrode; Fig.10 The first metal layer 001a covers the upper surface of the pixel definition layer 003; after the three-color electrodeless light-emitting diode chips 10a, 10b, and 10c are common-pole welded, the longitudinal or transverse light-emitting units of the light-emitting display module can also form a common-pole connection in sequence; the sealing layer 004 finally covers the surface of the light-emitting unit to form mechanical protection and water vapor sealing, and the light-emitting control of the light-emitting unit is provided by the electric drive substrate 100, and is bonded to the second metal layer 001b side of the carrier 000, and the second metal layer 001b is electrically connected to the source or drain in the thin-film transistor structure layer. Preferably, the electric drive substrate 100 is a thin-film transistor structure layer of a substrate of the same material as the carrier 000, such as a TFT structure of a channel of a preferred organic semiconductor manufactured on a PET film.

[0031] The present invention is not limited to the above-mentioned embodiments. On the basis of the technical solution disclosed in the present invention, technicians in this field can make some substitutions and deformations to some technical features therein according to the disclosed technical content without creative labor, and these substitutions and deformations are all within the protection scope of the present invention.

Claims

1. A light-emitting display module, comprising a plurality of light-emitting unit arrays, characterized in that: The light-emitting unit array includes a plurality of inorganic light-emitting diode chips, and the inorganic light-emitting diode chip includes a carrier, a first welding layer, a second welding layer, a first metal layer and a second metal layer; through holes are regularly arranged on the carrier, and a pixel definition layer is arranged around the through holes on the light-emitting side of the carrier, and the pixel definition layer is located between the inorganic light-emitting diode chips; the first metal layer is located on the light-emitting side of the carrier, and the second metal layer is located on the back of the carrier, and the second metal layer is injected into the through hole of the carrier, but does not penetrate to the light-emitting side of the carrier; the first welding layer contacts the first metal layer located on the light-emitting side of the carrier, and the second welding layer contacts the second metal layer in the through hole through the through hole of the carrier; the contact surfaces of the first welding layer and the second welding layer to the outside are located at different heights on the same side, and a height difference is formed between the first welding layer and the second welding layer; the carrier is also attached to the electric drive substrate, and the electric drive substrate is electrically connected to the carrier through the second metal layer.

2. A light-emitting display module according to claim 1, characterized in that: The height difference H between the first welding layer and the second welding layer is in the range of 15 μm≤H≤100 μm.

3. The light-emitting display module according to claim 1, characterized in that: The light emitting unit array comprises a transverse array and a longitudinal array, and the first welding layers of all inorganic light emitting diode chips on the transverse array and the longitudinal array are electrically connected to each other through the first metal layer.

4. The light-emitting display module according to claim 1, characterized in that: The inorganic light emitting diode chip includes a single-color or three-color inorganic light emitting diode chip.

5. The light-emitting display module according to claim 4, characterized in that: The light emission wavelength of the monochromatic inorganic light emitting diode chip is within any 5 nm range of 380-680 nm.

6. The light-emitting display module according to claim 4, characterized in that: The three-color inorganic light-emitting diode chip includes a light-emitting diode chip with a light-emitting wavelength of 455-475nm, a light-emitting diode chip with a light-emitting wavelength of 525-545nm and a light-emitting diode chip with a light-emitting wavelength of 615-625nm.

7. The light-emitting display module according to claim 1, characterized in that: The carrier is made of transparent electrical insulating material.

8. The light-emitting display module according to claim 1, characterized in that: The pixel definition layer is made of transparent electrical insulating material.

9. The light-emitting display module according to claim 1, characterized in that: The electric drive substrate is a thin film transistor structure layer, and the second metal layer is electrically connected to a source electrode or a drain electrode in the thin film transistor structure layer.

10. The light-emitting display module according to claim 9, characterized in that: The channel material in the thin film transistor structure layer is a compound semiconductor material or an organic semiconductor material.

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