Piping and treatment equipment

Abstract

The present invention relates to piping and a processing device. The generation of discharge at the connection part of the piping is suppressed. A piping is arranged between two conductive members having a potential difference, so that gas flows from one of the conductive members to the other conductive member, wherein the piping comprises an outer cylinder, a core material, and a high dielectric constant member. The core material is arranged in the outer cylinder and has an outer wall with a shape corresponding to the inner wall of the outer cylinder. The dielectric constant of the high dielectric constant member is higher than the dielectric constant of the outer cylinder and the core material. A spiral groove is formed in at least one of the inner wall of the outer cylinder and the outer wall of the core material, and the spiral groove forms a flow path for the gas when the core material is accommodated in the outer cylinder. The high dielectric constant member is arranged at at least one of the end of the outer cylinder and the end of the core material.

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to piping and processing devices. Background Art

[0002] In a processing device that uses plasma to perform a process such as etching on a substrate, it is important to manage the temperature of the substrate. The substrate is placed on an electrostatic chuck provided on a lower electrode. The temperature of the lower electrode is controlled by a refrigerant that flows inside the lower electrode, and the temperature of the electrostatic chuck is controlled by a heater provided inside. A heat transfer gas such as helium is supplied between the electrostatic chuck and the substrate. The heat of the lower electrode is transferred to the electrostatic chuck, and the heat of the electrostatic chuck is transferred to the substrate via the heat transfer gas. By controlling the pressure of the heat transfer gas, the amount of heat transferred between the electrostatic chuck and the substrate can be controlled, and the temperature of the substrate can be controlled. The heat transfer gas is supplied via a pipe provided between the lower electrode and a grounded shell.

[0003] Here, since RF (Radio Frequency) power is supplied to the lower electrode, a potential difference is generated at both ends of the piping provided between the housing and the lower electrode. Therefore, in the piping, the electrons emitted from the electrode are accelerated and collide with atoms of the heat transfer gas in the piping, thereby sometimes generating discharge (sparks) in the piping. In order to prevent this, there is a known technique for setting the flow path in the piping in a spiral shape (see, for example, the following patent document 1). Thus, the length of the space in the piping in the electric field direction can be shortened, the acceleration of electrons can be suppressed, and the generation of discharge can be suppressed.

[0004] Patent Document 1: U.S. Patent No. 8503151 Summary of the invention

[0005] Problem that the invention aims to solve

[0006] The present disclosure provides a pipe and a processing device capable of suppressing the occurrence of discharge at a connection portion of the pipe.

[0007] Solutions for solving problems

[0008] The piping on one side of the present disclosure is arranged between two conductive components with a potential difference, so that gas flows from one conductive component to the other conductive component, wherein the piping comprises an outer cylinder, a core material and a high dielectric constant component. The core material is arranged in the outer cylinder and has an outer wall with a shape corresponding to the inner wall of the outer cylinder. The dielectric constant of the high dielectric constant component is higher than the dielectric constant of the outer cylinder and the core material. A spiral groove is formed in at least one of the inner wall of the outer cylinder and the outer wall of the core material, and the spiral groove forms a flow path for the gas when the core material is accommodated in the outer cylinder. The high dielectric constant component is arranged at at least one of the end of the outer cylinder and the end of the core material.

[0009] Effects of the Invention

[0010] According to various aspects and embodiments of the present disclosure, it is possible to suppress the occurrence of discharge at the connection portion of the pipe. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a schematic cross-sectional view showing an example of a processing device according to an embodiment of the present disclosure.

[0012] Figure 2 It is an enlarged cross-sectional view showing an example of a connection portion between a lower electrode and a pipe, and a connection portion between the pipe and a bottom portion of a processing container.

[0013] Figure 3 It is a top view showing an example of piping.

[0014] Figure 4 It is a perspective cross-sectional view showing an example of piping.

[0015] Figure 5 This is an enlarged cross-sectional view showing an example of a connection portion between a lower electrode and a pipe.

[0016] Figure 6 This is a diagram showing an example of simulation results of the distribution of equipotential lines near the opening of the comparative example.

[0017] Figure 7 This is a diagram showing an example of simulation results of the distribution of equipotential lines near the openings of the present embodiment.

[0018] Figure 8 It is a cross-sectional view showing an example of the arrangement of the high dielectric constant member.

[0019] Fig. 9 It is a cross-sectional view showing another example of the arrangement of the high dielectric constant member.

[0020] Fig.10 It is a plan view showing another example of the arrangement of the high dielectric constant member.

[0021] Fig.11 It is a plan view showing another example of the arrangement of the high dielectric constant member.

[0022] Fig.12 It is a cross-sectional view showing another example of the arrangement of the high dielectric constant member.

[0023] Fig.13 It is a cross-sectional view showing another example of the arrangement of the high dielectric constant member.

[0024] Fig.14It is a cross-sectional view showing another example of the arrangement of the high dielectric constant member. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the piping and the processing device will be described in detail based on the drawings. In addition, the following embodiments are not limited to the disclosed piping and the processing device.

[0026] Here, in recent substrate processing using plasma, there is a tendency for the voltage supplied to the lower electrode to become higher. Therefore, there is a situation where discharge of the heat transfer gas is easily caused in the piping. In the case where the voltage supplied to the lower electrode becomes higher, it is considered to further shorten the length of the space in the piping in the electric field direction by narrowing the width of the spiral flow path in the piping.

[0027] However, there is a portion in the connection between the pipe and the lower electrode that is longer in the electric field direction than the width of the spiral flow path. Therefore, discharge is more likely to occur in the connection between the pipe and the lower electrode than in the pipe. In addition, discharge is also more likely to occur between the pipe and the housing than in the pipe.

[0028] Therefore, the present disclosure provides a technology capable of suppressing the occurrence of discharge at the connection portion of the pipe.

[0029] [Structure of Processing Device 1]

[0030] Figure 1 1 is a schematic cross-sectional view showing an example of a processing device 1 according to an embodiment of the present disclosure. In the present embodiment, the processing device 1 is, for example, a plasma etching device that has parallel plate electrodes and uses a capacitively coupled plasma (CCP) to etch a substrate W. The processing device 1 includes a device body 10 and a control device 11. The device body 10 includes a processing container 12 that is made of a conductive material such as aluminum and has, for example, a substantially cylindrical shape. The processing container 12 is an example of a conductive member. Anodizing treatment is applied to the inner wall surface of the processing container 12. In addition, the processing container 12 is securely grounded. The processing container 12 is an example of a shell.

[0031] A substantially cylindrical support portion 14 made of an insulating material such as quartz is provided at the bottom of the processing container 12. The support portion 14 extends vertically (eg, toward the upper electrode 30) from the bottom of the processing container 12.

[0032] A stage ST is provided in the processing container 12. The stage ST is an example of a conductive member. The stage ST is supported by a support 14. The stage ST holds a substrate W on the upper surface of the stage ST. The stage ST has an electrostatic chuck ESC and a lower electrode LE. The lower electrode LE is made of a conductive material such as aluminum and has a substantially disk shape. The electrostatic chuck ESC is arranged on the lower electrode LE.

[0033] The electrostatic chuck ESC has a structure in which an electrode EL as a conductive film is arranged between a pair of insulating layers or between a pair of insulating sheets. A DC power source 19 is electrically connected to the electrode EL via a switch SW. The electrostatic chuck ESC uses electrostatic force such as Coulomb force generated by a DC voltage supplied from the DC power source 19 to adsorb the substrate W on the upper surface of the electrostatic chuck ESC. Thus, the electrostatic chuck ESC can hold the substrate W.

[0034] A heat transfer gas such as helium is supplied to the electrostatic chuck ESC via the pipes 18 and 20. The heat transfer gas supplied via the pipes 18 and 20 is supplied between the electrostatic chuck ESC and the substrate W. The pressure of the heat transfer gas supplied between the electrostatic chuck ESC and the substrate W is adjusted, so that the amount of heat transferred between the electrostatic chuck ESC and the substrate W can be adjusted.

[0035] Furthermore, a heater HT as a heating element is provided inside the electrostatic chuck ESC. A heater power supply HP is connected to the heater HT. Electricity is supplied from the heater power supply HP to the heater HT, so that the substrate W on the electrostatic chuck ESC can be heated via the electrostatic chuck ESC. Alternatively, the heater HT may be disposed between the electrostatic chuck ESC and the lower electrode LE.

[0036] An edge ring ER is arranged around the electrostatic chuck ESC so as to surround the edge of the substrate W and the electrostatic chuck ESC. The edge ring ER is sometimes also called a focus ring. The edge ring ER can improve the in-plane uniformity of processing the substrate W. The edge ring ER is made of a material appropriately selected according to the material of the film to be etched, such as quartz.

[0037] A flow path 15 for flowing an insulating fluid such as Galden (registered trademark) is formed inside the lower electrode LE. A cooler unit 17 is connected to the flow path 15 via a pipe 16a, a pipe 16b, a pipe 160a, and a pipe 160b. The cooler unit 17 controls the temperature of the insulating fluid flowing in the flow path 15 of the lower electrode LE. The insulating fluid whose temperature is controlled by the cooler unit 17 is supplied to the flow path 15 of the lower electrode LE via the pipes 16a and the pipe 160a. The insulating fluid flowing in the flow path 15 returns to the cooler unit 17 via the pipes 160b and the pipe 16b. The temperature of the substrate W placed on the electrostatic chuck ESC is adjusted by the lower electrode LE and the heater HT.

[0038] A power supply tube 69 for supplying RF power to the lower electrode LE is electrically connected to the lower surface of the lower electrode LE. The power supply tube 69 is made of metal. Figure 1 Although not shown in the figure, lift pins and a driving mechanism thereof for transferring the substrate W on the electrostatic chuck ESC are arranged in the space between the lower electrode LE and the bottom of the processing container 12 .

[0039] The first RF power supply 64 is connected to the power supply pipe 69 via the matching device 68. The first RF power supply 64 is a power supply that generates RF power, i.e., RF bias power, for introducing ions to the substrate W, and generates RF bias power of, for example, a frequency of 400 [kHz] to 40.68 [MHz], and in one example, a frequency of 13.56 [MHz]. The matching device 68 is a circuit for matching the output impedance of the first RF power supply 64 with the input impedance of the load (lower electrode LE) side. The RF bias power generated by the first RF power supply 64 is supplied to the lower electrode LE via the matching device 68 and the power supply pipe 69.

[0040] An upper electrode 30 is provided above the stage ST and at a position facing the stage ST. The lower electrode LE and the upper electrode 30 are arranged substantially parallel to each other. Plasma is generated in the space between the upper electrode 30 and the lower electrode LE, and the generated plasma is used to perform plasma processing such as etching on the substrate W held on the upper surface of the electrostatic chuck ESC. The space between the upper electrode 30 and the lower electrode LE is a processing space PS.

[0041] The upper electrode 30 is supported on the upper part of the processing container 12 by an insulating shielding member 32 made of, for example, quartz. The upper electrode 30 includes an electrode plate 34 and an electrode support 36. The lower surface of the electrode plate 34 faces the processing space PS. A plurality of gas ejection ports 34a are formed in the electrode plate 34. The electrode plate 34 is made of, for example, a material containing silicon.

[0042] The electrode support 36 is made of a conductive material such as aluminum, and supports the electrode plate 34 from above so that it can be loaded and unloaded. The electrode support 36 may have a water cooling structure not shown. A diffusion chamber 36a is formed inside the electrode support 36. A plurality of gas flow ports 36b connected to the gas ejection port 34a of the electrode plate 34 extend downward (toward the mounting table ST) from the diffusion chamber 36a. A gas inlet 36c for introducing a processing gas into the diffusion chamber 36a is provided in the electrode support 36, and a pipe 38 is connected to the gas inlet 36c.

[0043] The gas source group 40 is connected to the pipe 38 via the valve group 42 and the flow controller group 44. The gas source group 40 has a plurality of gas sources. The valve group 42 includes a plurality of valves, and the flow controller group 44 includes a plurality of flow controllers such as a mass flow controller. Each gas source group 40 is connected to the pipe 38 via a corresponding valve in the valve group 42 and a corresponding flow controller in the flow controller group 44.

[0044] Thus, the apparatus body 10 can supply the gas supplied from one or more gas sources selected from the gas source group 40 to the diffusion chamber 36a in the electrode support 36 at an individually adjusted flow rate. The gas supplied to the diffusion chamber 36a is diffused in the diffusion chamber 36a, and is supplied to the processing space PS in a spray shape through each gas flow port 36b and the gas ejection port 34a.

[0045] The second RF power source 62 is connected to the electrode support 36 via a matching device 66. The second RF power source 62 is a power source for generating RF power for plasma generation, and generates RF power with a frequency of, for example, 27 [MHz] to 100 [MHz], and in one example, a frequency of 60 [MHz]. The matching device 66 is a circuit for matching the output impedance of the second RF power source 62 with the input impedance of the load (upper electrode 30) side. The RF power generated by the second RF power source 62 is supplied to the upper electrode 30 via the matching device 66. In addition, the second RF power source 62 may be connected to the lower electrode LE via the matching device 66.

[0046] A sediment shield 46 is detachably provided on the inner wall surface of the processing container 12 and the outer side surface of the support portion 14. The sediment shield 46 is made of aluminum or the like and has a surface coated with Y 2 O 3 , quartz, etc. The deposit shield 46 can prevent the etching by-products (deposits) from being attached to the processing container 12 and the support portion 14 .

[0047] An exhaust plate 48 is provided between the outer wall of the support portion 14 and the inner wall of the processing container 12 and on the bottom side of the processing container 12 (the side where the support portion 14 is provided). The exhaust plate 48 is made of aluminum or the like and has a surface coated with Y 2 O 3 , quartz, etc. An exhaust port 12e is provided below the exhaust plate 48. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52.

[0048] The exhaust device 50 includes a vacuum pump such as a turbomolecular pump and can reduce the pressure in the processing container 12 to a desired vacuum level. An opening 12g for carrying the substrate W in and out is provided on the side wall of the processing container 12 and can be opened and closed by a gate valve 54 .

[0049] The control device 11 has a processor, a memory, and an input / output interface. The memory stores a program executed by the processor and a process including conditions for each process. The processor executes the program read from the memory, and controls each part of the device body 10 via the input / output interface according to the process stored in the memory, thereby performing a predetermined process such as etching.

[0050] [Details of the Pipe 20]

[0051] Figure 2 1 is an enlarged cross-sectional view showing an example of a connection portion between the lower electrode LE and the pipe 20 and a connection portion between the pipe 20 and the bottom of the processing container 12. The pipe 20 is arranged between the lower electrode LE and the bottom of the processing container 12, and allows the heat transfer gas supplied from the outside of the processing container 12 to flow to the lower electrode LE. A space 301 in the connection portion between the lower electrode LE and the pipe 20 is sealed by a sealing member 302 such as an O-ring. The space 301 communicates with a flow path 300 formed in the lower electrode LE. In addition, a space 304 in the connection portion between the bottom of the processing container 12 and the pipe 20 is sealed by a sealing member 305 such as an O-ring. The space 304 communicates with a flow path 303 formed in the bottom of the processing container 12.

[0052] The pipe 20 includes an outer tube 200, a high dielectric constant member 201, and a core material 202. The high dielectric constant member 201 is formed of a material having a higher dielectric constant than the outer tube 200 and the core material 202. In the present embodiment, the outer tube 200 and the core material 202 are formed of, for example, resin, and the high dielectric constant member 201 is formed of, for example, a material including at least any one of quartz, ceramics, silicon, and metal.

[0053] The core material 202 is accommodated in the outer cylinder 200, and the outer wall of the core material 202 has a shape corresponding to the inner wall of the outer cylinder 200. In the present embodiment, the outer shape of the core material 202 is substantially cylindrical, and the inner wall of the outer cylinder 200 is substantially cylindrical. In addition, the outer wall of the core material 202 and the inner wall of the outer cylinder 200 may be square columnar and square cylindrical, respectively, as long as they are corresponding shapes.

[0054] In the present embodiment, a spiral groove 2020 is formed along the outer wall of the core material 202. When the core material 202 is accommodated in the outer cylinder 200, the space formed by the groove 2020 and the inner wall of the outer cylinder 200 constitutes a flow path for the heat transfer gas to flow. The outer wall of the core material 202 has a substantially cylindrical shape, and the inner wall of the outer cylinder 200 has a substantially cylindrical shape. Therefore, even when the width of the groove 2020 is narrowed, the conductivity of the flow path formed by the groove 2020 and the inner wall of the outer cylinder 200 can be suppressed from decreasing. In addition, the spiral groove 2020 can be formed on the inner wall of the outer cylinder 200, or on both the outer wall of the core material 202 and the inner wall of the outer cylinder 200.

[0055] The core material 202 has openings 2021 and 2022 at both ends thereof, which are connected to the groove 2020. The opening 2021 is connected to the flow path 300 of the lower electrode LE via the space 301. The opening 2022 is connected to the flow path 303 at the bottom of the processing container 12 via the space 304. Alternatively, the openings 2021 and 2022 may be provided in the outer cylinder 200.

[0056] Figure 3 It is a top view showing an example of the pipe 20 . Figure 4 2 is a perspective cross-sectional view showing an example of the pipe 20. Figure 4 As shown, the heat transfer gas supplied from the flow path 303 at the bottom of the processing container 12 through the opening 2022 flows into the spiral flow path formed by the groove 2020 provided on the outer wall of the core material 202 and the inner wall of the outer cylinder 200. Then, the heat transfer gas flowing in the spiral flow path flows into the flow path 300 of the lower electrode LE through the opening 2021 and the space 301.

[0057] A high dielectric constant member 201 is provided at the end of the outer cylinder 200 and in the vicinity of the openings 2021 and 2022. In addition, a high dielectric constant member 201 is also provided at the end of the core material 202 and in the vicinity of the openings 2021 and 2022. In the present embodiment, the high dielectric constant member 201 is annularly arranged at the end of the outer cylinder 200 along the outer side wall of the core material 202 in a manner surrounding the opening 2021. In addition, in the present embodiment, the high dielectric constant member 201 is annularly arranged along the outer side wall of the core material 202 in a manner surrounding the axis X (the axis of the spiral formed by the groove 2020) of the core material 202 at a position closer to the opening 2021 than to the axis X of the core material 202. In the present embodiment, the shape of the high dielectric constant member 201 is, for example, as shown in FIG. Figure 3 and Figure 4 As shown, it is roughly cylindrical.

[0058] Here, RF power is supplied from the first RF power supply 64 to the lower electrode LE, and the processing container 12 is grounded. Therefore, a potential difference is generated between the lower electrode LE and the processing container 12. If the flow path of the heat transfer gas in the pipe 20 is linear between the bottom of the processing container 12 and the lower electrode LE, electrons emitted from the lower electrode LE or the bottom of the processing container 12 are accelerated in the pipe 20 due to the potential difference applied to both ends of the pipe 20. When the potential difference between the lower electrode LE and the processing container 12 increases, the electrons accelerated in the pipe 20 collide with atoms of the heat transfer gas in the pipe 20, thereby generating discharge (sparks).

[0059] In order to prevent discharge in the pipe 20 , the length of the flow path in the electric field direction needs to be shortened. For example, by making the flow path of the heat transfer gas in the pipe 20 spiral, discharge of the heat transfer gas in the pipe 20 can be suppressed.

[0060] However, with the increase in process voltage in recent years, it is easy to cause discharge of the heat transfer gas in the pipe 20. In particular, the connection portion between the pipe 20 and the lower electrode LE and the connection portion between the pipe 20 and the bottom of the processing container 12 are longer in the electric field direction than the width of the spiral flow path, so it is easy to cause discharge in the connection portion.

[0061] Figure 5 2 is an enlarged cross-sectional view showing an example of a connection portion between the lower electrode LE and the pipe 20. In the following, the connection portion between the pipe 20 and the lower electrode LE is described, but the connection portion between the pipe 20 and the bottom of the processing container 12 is also described in the same manner.

[0062] For example Figure 5 As shown in FIG. 1 , the width ΔW3 of the opening 2021, which is the outlet of the flow path formed by the spiral groove 2020, is wider than the width ΔW1 of the spiral groove 2020 and the width ΔW2 of the space 301 of the connection portion between the lower electrode LE and the pipe 20. Therefore, discharge is more likely to occur in the opening 2021 than in the groove 2020 and the space 301. In order to prevent this, in the present embodiment, for example, Figure 2 to Figure 4 As shown, a high dielectric constant member 201 formed of a material having a higher dielectric constant than the outer cylinder 200 and the core material 202 is arranged near the opening 2021 .

[0063] Here, the distribution of equipotential lines near the opening 2021 is calculated by simulation. Figure 6 This is a diagram showing an example of a simulation result of the distribution of equipotential lines near the opening 2021 in the comparative example. Figure 72021 is a diagram showing an example of a simulation result of the distribution of equipotential lines near the opening 2021 in the present embodiment. In the case of a comparative example in which the high dielectric constant member 201 is not arranged near the opening 2021, for example, Figure 6 As shown by the dotted line in , the density of equipotential lines near the opening 2021 increases. Therefore, discharge is easily caused near the opening 2021.

[0064] In contrast, in the present embodiment, the high dielectric constant member 201 is disposed near the opening 2021. Therefore, for example, Figure 7 As shown by the dotted line in , the density of equipotential lines near the opening 2021 becomes low. Thus, the discharge near the opening 2021 can be suppressed.

[0065] Similarly, in the connection portion between the pipe 20 and the bottom of the processing container 12 , the high dielectric constant member 201 is arranged near the opening 2022 , so that the density of equipotential lines near the opening 2022 is reduced, and discharge near the opening 2022 can be suppressed.

[0066] In addition, the high dielectric constant member 201 is arranged relative to the opening 2021, for example, Figure 8 Position shown. Figure 8 2 is a cross-sectional view showing an example of the configuration of the high dielectric constant member 201. The high dielectric constant member 201 is configured at a distance ΔL1 from the opening 2021. In the present embodiment, it is preferred that the distance ΔL1 is within, for example, 2 times the width ΔW1 of the groove 2020. In addition, it is preferred that the length ΔL2 of the high dielectric constant member 201 in the direction along the axis X of the pipe 20 is, for example, 12 times or more the width ΔW1 of the groove 2020. In addition, it is preferred that the width ΔW4 of the high dielectric constant member 201 is, for example, 3 times or more the width ΔW1 of the groove 2020.

[0067] In addition, it is preferred that the smaller the distance ΔL1 is, the shorter the length ΔL2 is, and it is preferred that the larger the distance ΔL1 is, the longer the length ΔL2 is.

[0068] One embodiment has been described above. As described above, the pipe 20 of this embodiment is arranged between the lower electrode LE having a potential difference and the bottom of the processing container 12, so that the gas flows from the bottom of the processing container 12 to the lower electrode LE, and the pipe 20 includes an outer cylinder 200, a high dielectric constant member 201, and a core material 202. The core material 202 is arranged in the outer cylinder 200, and has an outer wall of a shape corresponding to the inner wall of the outer cylinder 200. The dielectric constant of the high dielectric constant member 201 is higher than the dielectric constants of the outer cylinder 200 and the core material 202. A spiral groove 2020 is formed in at least one of the inner wall of the outer cylinder 200 and the outer wall of the core material 202, and the spiral groove 2020 forms a gas flow path in a state where the core material 202 is accommodated in the outer cylinder 200. The high dielectric constant member 201 is arranged at at least one of the end of the outer cylinder 200 and the end of the core material 202. This can suppress the occurrence of discharge at the connection portion of the pipe 20 .

[0069] In the above embodiment, the inner wall of the outer tube 200 is cylindrical, and the outer wall of the core 202 is cylindrical. This can prevent the conductivity of the flow path formed by the groove 2020 and the inner wall of the outer tube 200 from decreasing.

[0070] Furthermore, in the above-described embodiment, the high dielectric constant member 201 is annularly arranged at the end of the outer cylinder 200 along the outer wall of the core material 202. This can suppress the occurrence of discharge at the connection portion of the pipe 20.

[0071] Furthermore, in the above-described embodiment, high dielectric constant member 201 is annularly arranged along the outer wall of core material 202 so as to surround the axis of core material 202. This can suppress the occurrence of discharge at the connection portion of pipe 20.

[0072] In the above-described embodiment, the distance ΔL1 between the groove 2020 and the high dielectric constant member 201 is within 2 times the width ΔW1 of the groove 2020. In addition, the length ΔL2 of the high dielectric constant member 201 in the direction along the axis X is 12 times or more the width ΔW1 of the groove 2020. Thus, the generation of discharge at the connection portion of the pipe 20 can be suppressed.

[0073] In the above embodiment, the outer cylinder 200 and the core material 202 are formed of resin, for example, and the high dielectric constant member 201 is formed of a material including at least one of quartz, ceramics, silicon, and metal, for example. This can suppress the generation of discharge at the connection portion of the pipe 20.

[0074] In addition, the processing apparatus 1 of the above-mentioned embodiment includes: a grounded processing container 12; a stage ST, which is provided in the processing container 12 and to which a predetermined voltage is applied, and for mounting a substrate W; and a pipe 20, which is provided between the processing container 12 and the stage ST, and supplies gas from the outside of the processing container 12 to the stage ST through the processing container 12. The pipe 20 includes an outer cylinder 200, a high dielectric constant member 201, and a core material 202. The core material 202 is arranged in the outer cylinder 200 and has an outer wall of a shape corresponding to the inner wall of the outer cylinder 200. The dielectric constant of the high dielectric constant member 201 is higher than the dielectric constants of the outer cylinder 200 and the core material 202. A spiral groove 2020 is formed in at least one of the inner wall of the outer cylinder 200 and the outer wall of the core material 202, and the spiral groove 2020 forms a gas flow path in a state where the core material 202 is accommodated in the outer cylinder 200. The high dielectric constant member 201 is disposed at least at one of the end of the outer cylinder 200 and the end of the core material 202. This can suppress the occurrence of discharge at the connection portion of the pipe 20.

[0075] [other]

[0076] In addition, the technology disclosed in the present application is not limited to the above-mentioned embodiment, and various modifications can be made within the scope of the gist of the technology.

[0077] For example, in the above-mentioned embodiment, the high dielectric constant member 201 is provided at both the end of the outer cylinder 200 and the end of the core material 202, but the disclosed technology is not limited to this. For example, the high dielectric constant member 201 may be provided only at one of the end of the outer cylinder 200 and the end of the core material 202. In addition, in the case where the high dielectric constant member 201 is provided at the end of the core material 202, for example Fig. 9 As shown, the high dielectric constant member 201 may also be formed in a substantially cylindrical shape. Fig. 9 2 is a cross-sectional view showing another example of the arrangement of the high dielectric constant member 201 .

[0078] In the above-mentioned embodiment, the high dielectric constant member 201 is cylindrical in shape (see Figure 4 ), but the disclosed technology is not limited thereto. As long as the high dielectric constant member 201 is annularly arranged at the end of the outer cylinder 200 along the outer wall of the core material 202 so as to surround the opening 2021, for example, Fig.10 As shown, the high dielectric constant member 201 may be divided into a plurality of high dielectric constant members 201. In addition, as long as the high dielectric constant member 201 is arranged in a ring shape along the outer wall of the core material 202 on the core material 202 side closer to the axis X than the opening 2021 so as to surround the axis X, for example, Fig.10 As shown, it can also be divided into multiple high dielectric constant components 201. Fig.10 It is a plan view showing another example of the arrangement of the high dielectric constant member 201 .

[0079] Moreover, for example Fig.11 As shown, multiple high dielectric constant components 201 may be arranged at the end of the outer cylinder 200 along the outer wall of the core material 202 in a manner surrounding the opening 2021, and the core material 202 on the axis X side of the opening 2021 may be arranged in an annular shape in a manner surrounding the axis X. Fig.11 FIG. 2 is a top view showing another example of the configuration of the high dielectric constant member 201. Fig.11 In the example, each high dielectric constant member 201 is formed in a rod shape, and each high dielectric constant member 201 is arranged at the ends of the outer cylinder 200 and the core material 202 so that the longitudinal direction of the high dielectric constant member 201 is oriented along the direction of the axis X.

[0080] In addition, in the above-mentioned embodiment, each high dielectric constant member 201 does not contact the lower electrode LE and the bottom of the processing container 12, but the disclosed technology is not limited to this. Fig.12 As shown, each high dielectric constant member 201 may also be in contact with the lower electrode LE or the bottom of the processing container 12 . Fig.12 2 is a cross-sectional view showing another example of the configuration of the high dielectric constant member 201. Fig.12 In the example of FIG. 1 , each high dielectric constant member 201 is forced toward the lower electrode LE or the bottom of the processing container 12 by a force applying member 2010. The force applying member 2010 is an elastic body such as an O-ring, a metal spiral or a spring. Thus, the magnitude of the electric field between the lower electrode LE and the high dielectric constant member 201 and between the bottom of the processing container 12 and the high dielectric constant member 201 can be reduced, and the generation of discharge at the connection portion of the pipe 20 can be further suppressed.

[0081] In addition, Fig.12 In the illustrated structure, it is preferred that the shape of each high dielectric constant member 201 is similar to, for example, Fig.10 or Fig.11 The high dielectric constant member 201 shown in the example has the same shape. When the shape of each high dielectric constant member 201 is cylindrical, it is preferable that the high dielectric constant member 201 is not provided at the end of the core material 202.

[0082] In addition, in the above-mentioned embodiment, each high dielectric constant member 201 is provided at the end of the outer cylinder 200 and the core material 202, but the disclosed technology is not limited to this. Fig.13 As shown, a recess 2011 having a shape corresponding to the high dielectric constant component 201 may be formed at the ends of the outer tube 200 and the core material 202, and the high dielectric constant component 201 may be arranged at a position opposite to the recess 2011 at the bottom of the lower electrode LE and the processing container 12. Fig.13 2 is a cross-sectional view showing another example of the arrangement of the high dielectric constant member 201. Even with such a structure, the generation of discharge at the connection portion of the pipe 20 can be suppressed.

[0083] In addition, the recessed portion 2011 formed at the end of the outer cylinder 200 and the core material 202 and the high dielectric constant member 201 provided at the lower electrode LE also function as a guide to assist in the position alignment when the pipe 20 is mounted on the lower electrode LE. Similarly, the recessed portion 2011 formed at the end of the outer cylinder 200 and the core material 202 and the high dielectric constant member 201 provided at the bottom of the processing container 12 also function as a guide to assist in the position alignment when the pipe 20 is mounted on the bottom of the processing container 12. Thus, the assembly of the apparatus main body 10 can be easily performed.

[0084] In addition, Fig.13 In the embodiment, the high dielectric constant member 201 is provided at the ends of the outer cylinder 200 and the core material 202, but the disclosed technology is not limited thereto. For example, a recess 2011 having a shape corresponding to the high dielectric constant member 201 may be formed at the ends of the outer cylinder 200 and the core material 202, and a recess having a shape corresponding to the high dielectric constant member 201 may also be formed at a position opposite to the recess 2011 at the bottom of the lower electrode LE and the processing container 12. In this case, for example, after the high dielectric constant member 201 is inserted into the recess 2011 at the ends of the outer cylinder 200 and the core material 202 or the recess at the bottom of the lower electrode LE and the processing container 12, the pipe 20 is installed at the bottom of the processing container 12, and the pipe 20 is installed at the lower electrode LE.

[0085] In addition, for example Fig.14 As shown, the convex portion 2013 may be formed on the lower surface of the lower electrode LE at a position opposite to the concave portion 2011, and the pipe 20 may be mounted on the lower electrode LE in such a manner that the convex portion 2013 is accommodated in the concave portion 2011. Fig.14 As shown, a convex portion 2014 may be formed on the upper surface of the bottom of the processing container 12 at a position opposite to the concave portion 2011 , and the pipe 20 may be installed on the bottom of the processing container 12 in such a manner that the convex portion 2014 is accommodated in the concave portion 2011 . Fig.142013 is a cross-sectional view showing another example of the configuration of the high dielectric constant member. In addition, the convex portion 2013 is formed integrally with the lower electrode LE by the same material as the lower electrode LE, and the convex portion 2014 is formed integrally with the processing container 12 by the same material as the processing container 12. In this embodiment, the lower electrode LE and the processing container 12 are formed of a conductive material such as aluminum, and the outer cylinder 200 and the core material 202 are formed of resin, for example. Therefore, the dielectric constants of the convex portion 2013 and the convex portion 2014 are higher than the dielectric constants of the outer cylinder 200 and the core material 202. The convex portion 2013 and the convex portion 2014 are an example of a high dielectric constant member.

[0086] In addition, in the above-mentioned embodiment, the high dielectric constant member 201 formed of the same material is provided at the ends of the outer cylinder 200 and the core material 202, but the disclosed technology is not limited to this. For example, the high dielectric constant member 201 provided at the end of the outer cylinder 200 and the high dielectric constant member 201 provided at the end of the core material 202 may be formed of different materials.

[0087] In addition, in the above-mentioned embodiment, capacitively coupled plasma is described as an example of a plasma source used in the apparatus main body 10, but the plasma source is not limited thereto. As plasma sources other than capacitively coupled plasma, for example, inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), helicon excited plasma (HWP), etc. can be cited.

[0088] In addition, in the above-mentioned embodiment, as the device body 10, an apparatus that uses plasma to etch the substrate W is described as an example, but the disclosed technology is not limited to this. For example, the disclosed technology can also be applied to an apparatus that uses plasma to perform film formation, modification, and other processes. In addition, even if it is an apparatus that does not use plasma, the disclosed technology can be applied to an apparatus that has a pipe that is arranged between two conductive members with a potential difference and allows gas to flow from one conductive member to the other conductive member.

[0089] In addition, it should be considered that the embodiments disclosed this time are illustrative and not restrictive in all aspects. In fact, the above-mentioned embodiments can be implemented in many ways. In addition, the above-mentioned embodiments can be omitted, replaced, and changed in various ways without departing from the attached claims and their gist.

Claims

1. A pipe disposed between two conductive members having a potential difference, and allowing a gas to flow from one of the conductive members to the other conductive member, in, The pipe has: an outer cylinder having an inner side wall, wherein the outer cylinder is formed of resin; a core material, which is arranged in the outer tube and has an outer side wall of a shape corresponding to the inner side wall of the outer tube, and the core material is formed of resin; a first annular high dielectric constant member embedded in the outer cylinder, the first annular high dielectric constant member being formed of a material including at least any one of quartz, ceramic, silicon, and metal; and a second annular high dielectric constant member embedded in the core material, which is formed of a material including at least any one of quartz, ceramic, silicon and metal, A spiral groove is formed on at least one of the inner wall of the outer tube and the outer wall of the core material. The spiral groove forms a gas flow path when the core material is accommodated in the outer tube. The dielectric constants of the first annular high dielectric constant member and the second annular high dielectric constant member are higher than the dielectric constants of the outer cylinder and the core material.

2. The pipe according to claim 1, in, The inner wall of the outer cylinder is cylindrical in shape. The outer wall of the core material has a cylindrical shape.

3. The pipe according to claim 1 or 2, in, The first annular high dielectric constant member is annularly arranged at an end portion of the outer tube along an outer side wall of the core material.

4. The pipe according to claim 1 or 2, in, The second annular high dielectric constant member is annularly arranged along the outer side wall of the core material at a position closer to the axis of the core material than the groove so as to surround the axis.

5. The pipe according to claim 1 or 2, in, A distance between the groove and the first annular high dielectric constant member and a distance between the groove and the second annular high dielectric constant member are within 2 times of a width of the groove.

6. The pipe according to claim 1 or 2, in, The length of the first annular high dielectric constant member and the second annular high dielectric constant member in a direction along the axis of the pipe is 12 times or more the width of the groove.

7. The pipe according to claim 1 or 2, in, A force applying member is provided on the outer tube or the core material. When the pipe is attached to the conductive member, the urging member urges the first annular high dielectric constant member and the second annular high dielectric constant member toward the conductive member.

8. A processing device, in, The processing device has: A grounded housing; A mounting table, which is disposed in the housing and to which a predetermined voltage is applied, and is used to mount the substrate; as well as a pipe provided between the housing and the mounting table, for supplying gas from the outside of the housing through the housing to the mounting table, The pipe has: an outer cylinder having an inner side wall, wherein the outer cylinder is formed of resin; a core material, which is arranged in the outer tube and has an outer side wall of a shape corresponding to the inner side wall of the outer tube, and the core material is formed of resin; a first annular high dielectric constant member embedded in the outer cylinder, the first annular high dielectric constant member being formed of a material including at least any one of quartz, ceramic, silicon, and metal; and a second annular high dielectric constant member embedded in the core material, which is formed of a material including at least any one of quartz, ceramic, silicon and metal, A spiral groove is formed on at least one of the inner wall of the outer tube and the outer wall of the core material. The spiral groove forms a gas flow path when the core material is accommodated in the outer tube. The dielectric constants of the first annular high dielectric constant member and the second annular high dielectric constant member are higher than the dielectric constants of the outer cylinder and the core material.

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