Manufacturing method and structure of lateral turbulence inductively coupled plasma etching machine

Abstract

This invention discloses a manufacturing method and structure of a lateral turbulence-type inductively coupled plasma etching machine. The manufacturing method includes: providing a first cavity; providing a second cavity formed below and connected to the first cavity; providing at least one first air inlet on the top surface of the first reaction chamber; providing at least one second air inlet on the periphery of the first reaction chamber and located on the top surface of the second cavity; and providing a plurality of third air inlets on the side wall of the second reaction chamber and positioned above the top surface of the wafer. By implementing this invention, the problem of poor gas flow distribution can be improved, effectively adjusting the gas flow to change the etching rate distribution on the wafer surface and increase the peripheral concentration.

Description

Technical Field

[0001] The present invention relates to a manufacturing method and structure of a lateral turbulence type inductively coupled plasma etching machine, and in particular to a manufacturing method and structure of a lateral turbulence type high uniformity inductively coupled plasma etching machine Background Art

[0002] Whether it is semiconductor, optoelectronics industry, or power electronic components, the use of plasma etching process has been widely used. In response to different process requirements, various process parameters for adjusting uniformity must be provided. It is a common practice to use the upper process to perform gas diversion at the gas inlet position to achieve uniformity of etching rate adjustment, especially for capacitive coupled plasma (CCP) with a chamber gap of less than 20 mm. Its effect is very obvious.

[0003] However, for inductively coupled plasma etchers (ICP), the use of gas splitting is not effective. This is because ICP uses a wide gap, with a gap greater than 140 mm, and the gases will mix before reaching the wafer. As a result, the use of gas splitting in inductively coupled plasma etchers in the past has not been very effective.

[0004] like Figure 1 and Figure 2 As shown, the existing inductively coupled plasma etcher uses a first gas inlet to provide the main gas for the plasma reaction, and uses a second gas inlet to assist in increasing the peripheral concentration of the gas reactants in the plasma reaction zone. However, such a design often fails to achieve the desired effect of increasing the concentration of the peripheral gas reactants because the gas introduced by the second gas inlet can be easily directly extracted by the exhaust port. Summary of the invention

[0005] The present invention is a manufacturing method and structure of a lateral turbulent inductively coupled plasma etching machine, which mainly solves the problem of how to improve the uniformity of etching and the peripheral concentration of gas reactants by adjusting the gas diversion to achieve the best etching effect.

[0006] The present invention provides a manufacturing method of a lateral turbulent inductively coupled plasma etching machine, which comprises: providing a first cavity having a first reaction chamber; providing a first coil, which is arranged around the periphery of the first cavity; providing a second cavity having a second reaction chamber, the second cavity being formed below the first cavity, and the second reaction chamber being connected to the first reaction chamber; providing a second coil, which is arranged around the periphery of the second cavity; providing at least one first air inlet, which is formed on the top surface of the first reaction chamber, and a first airflow is input through the first air inlet, so that a first airflow is generated in the plasma reaction areas of the first reaction chamber and the second reaction chamber. A gas reactant mass is formed to cover the wafer; at least one second gas inlet is provided, which is formed at the periphery of the first reaction chamber and located at the top surface of the second chamber, and the second gas inlet inputs a second gas flow to pass through the edge area of ​​the gas reactant mass; a plurality of third gas inlets are provided, which are formed on the side wall of the second reaction chamber and are higher than the top surface of the wafer, and the third gas inlet inputs a third gas flow to cause the second gas flow to generate turbulence to increase the concentration of gas reactant molecules at the edge of the gas reactant mass; at least one gas outlet is provided, which is connected to the second reaction chamber and formed below the wafer.

[0007] In one embodiment of the present invention, the injection angles of the plurality of third air inlets are between 0 and 60 degrees. In one embodiment of the present invention, the method for manufacturing a lateral turbulent inductively coupled plasma etching machine further comprises:

[0008] A gas flow ratio controller is provided for controlling the ratio and flow rate of the gas flows among the at least one first gas inlet, the at least one second gas inlet, the plurality of third gas inlets and the gas outlet.

[0009] The present invention also provides a side-turbulent inductively coupled plasma etching machine structure, which includes: a first cavity, which has a first reaction chamber; a first coil, which is arranged around the periphery of the first cavity; a second cavity, which has a second reaction chamber, the second cavity is formed below the first cavity, and the second reaction chamber is connected to the first reaction chamber; a second coil, which is arranged around the periphery of the second cavity; at least one first air inlet formed on the top surface of the first reaction chamber; at least one second air inlet formed on the periphery of the first reaction chamber and located at the top surface of the second cavity; multiple third air inlets formed on the side wall of the second reaction chamber and at a position higher than the top surface of the wafer; and at least one air outlet, which is connected to the second reaction chamber and formed below the wafer.

[0010] In one embodiment of the present invention, the injection angles of the plurality of third air inlets are between 0-60 degrees.

[0011] In one embodiment of the present invention, the lateral turbulence inductively coupled plasma etching machine structure further includes:

[0012] The gas flow ratio controller is used to control the ratio and flow rate of the gas flow among the at least one first gas inlet, the at least one second gas inlet, the plurality of third gas inlets and the gas outlet.

[0013] By implementing the present invention, at least the following improved effects can be achieved:

[0014] (1) The distribution of the etching rate on the wafer surface can be effectively changed by adjusting the gas flow;

[0015] (ii) It can improve the poor gas diversion effect of the previous wide gap reaction chamber;

[0016] (iii) It can effectively increase the peripheral concentration of gaseous reactants.

[0017] In order to enable any technician in this technical field to understand the technical content of the present invention and implement it accordingly, and based on the contents, claims and drawings disclosed in this specification, any technician in this technical field can easily understand the relevant purposes and advantages of the present invention, so the detailed features and advantages of the present invention will be described in detail in the implementation mode. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the structure of a side-turbulent high-uniformity inductively coupled plasma etcher with a first air inlet and a second air inlet for air intake according to an embodiment of the prior art;

[0019] Figure 2 for Figure 1 The gas flow simulation state diagram of the lateral disturbance type high uniformity inductively coupled plasma etcher shown;

[0020] Figure 3 A schematic diagram of a manufacturing process of a lateral turbulence type high uniformity inductively coupled plasma etcher according to an embodiment of the present invention;

[0021] Figure 4 A schematic diagram of a side-turbulent high-uniformity inductively coupled plasma etcher structure according to an embodiment of the present invention;

[0022] Figure 5 It is a schematic diagram of the airflow state of a lateral turbulence type high uniformity inductively coupled plasma etching machine structure using three groups of air inlets to intake air according to one embodiment of the present invention;

[0023] Figure 6 for Figure 5 The airflow simulation state diagram of the three groups of air inlets shown;

[0024] Figure 7It is a schematic diagram of a mechanism of using a gas flow ratio controller for three groups of gas inlets of a lateral turbulence type high uniformity inductively coupled plasma etcher structure according to an embodiment of the present invention;

[0025] Figure 8 A characteristic curve diagram of half-side uniformity simulation of a first reaction chamber of a lateral turbulence type high uniformity inductively coupled plasma etcher structure according to an embodiment of the present invention; and

[0026] Fig. 9 The characteristic curve diagram of half-edge concentration simulation of the first reaction chamber of the lateral disturbance type high uniformity inductively coupled plasma etcher structure according to one embodiment of the present invention.

[0027]

Explanation of symbols

[0028] S100: Method for manufacturing a lateral disturbance type high uniformity inductively coupled plasma etcher

[0029] S10: Provide the first cavity

[0030] S20: Provide the first coil

[0031] S30: Provide a second cavity

[0032] S40: Provides a second coil

[0033] S50: Setting at least one first air inlet

[0034] S60: Setting at least one second air inlet

[0035] S70: Multiple third air inlets

[0036] S80: Set at least one air outlet

[0037] 100: Lateral turbulence high uniformity inductively coupled plasma etching machine structure

[0038] 10: First cavity

[0039] 110: First reaction chamber

[0040] 20: First coil

[0041] 30: Second cavity

[0042] 310: Second reaction chamber

[0043] 40: Second coil

[0044] Qin1: First air intake

[0045] Qin2: Second air intake

[0046] Qin3: The third air intake

[0047] 80: Air outlet

[0048] 910: Wafer

[0049] 920: Gas flow ratio controller

[0050] PS: Plasma reaction zone

[0051] AR0: gaseous reactant mass

[0052] AF1: First Airflow

[0053] AF2: Second Airflow

[0054] AF3: Third Air Flow

[0055] θ: injection angle

[0056] L1: First characteristic curve

[0057] L2: Second characteristic curve

[0058] L3: The third characteristic curve

[0059] L4: The fourth characteristic curve

[0060] L5: Fifth characteristic curve DETAILED DESCRIPTION

[0061] like Figure 3 As shown, this embodiment first provides a manufacturing method S100 for a lateral turbulence type high uniformity inductively coupled plasma etcher, which includes: providing a first chamber S10; providing a first coil S20; providing a second chamber S30; providing a second coil S40; setting at least one first air inlet S50; setting at least one second air inlet S60; setting multiple third air inlets S70; and setting at least one air outlet S80.

[0062] like Figure 4 As shown, this embodiment also provides a side-turbulent high-uniformity inductively coupled plasma etching machine structure 100, which includes: a first chamber 10; a first coil 20; a second chamber 30; a second coil 40; at least one first air inlet Qin1; at least one second air inlet Qin2; multiple third air inlets Qin3; and at least one air outlet 80.

[0063] like Figures 3 to 6 As shown, a first chamber S10 is provided. The first chamber 10 has a first reaction chamber 110. The first reaction chamber 110 is a chamber that can perform an etching reaction.

[0064] A first coil S20 is provided. The first coil 20 is disposed around the periphery of the first chamber 10 . The first coil 20 is used to provide the first reaction chamber 110 with electromagnetic wave energy required for plasma reaction.

[0065] A second chamber S30 is provided. The second chamber 30 has a second reaction chamber 310. The second chamber 30 is formed below the first chamber 10, and the second reaction chamber 310 is connected to the first reaction chamber 110. Similarly, the second reaction chamber 310 can also be a chamber for performing etching reactions.

[0066] A second coil S40 is provided. The second coil 40 is disposed around the periphery of the second chamber 30 . Similarly, the second coil 40 is used to provide the second reaction chamber 310 with electromagnetic wave energy required for plasma reaction.

[0067] At least one first gas inlet S50 is provided, and the first gas inlet S50 is formed on the top surface of the first reaction chamber 110, that is, the first gas inlet S50 can be fed from the top surface of the first reaction chamber 110. The first gas flow AF1 of the first gas inlet Qin1 enters the plasma reaction zone PS of the first reaction chamber 110 and the second reaction chamber 310, and after being provided with energy by the first coil 20 and the second coil 40, a gas reactant gas group AR0, that is, a plasma group (plasma cloud) is formed, and the gas reactant gas group AR0 is used to cover the top of the wafer 910, so as to perform an etching process on the wafer 910.

[0068] At least one second air inlet S60 is provided. The second air inlet Qin2 is formed at the periphery of the first reaction chamber 110 and located at the top surface of the second chamber 30. The second air flow AF2 entering from the second air inlet Qin2 is used to pass through the edge area of ​​the gas reactant mass AR0.

[0069] A plurality of third air inlets S70 are provided. The third air inlet Qin3 is formed on the side wall of the second reaction chamber 30 and is higher than the top surface of the wafer 910. The third air flow AF3 entering the third air inlet Qin3 is used to cause the second air flow AF2 to generate turbulence, thereby increasing the stagnation time of the second air flow AF2, and further increasing the concentration of gas reactant molecules at the edge of the gas reactant air mass AR0. In order to effectively cause the second air flow AF2 to generate turbulence, the injection angle θ of the third air inlet Qin3 and the horizontal plane is between 0-60 degrees.

[0070] Since the gas molecules in the plasma of the plasma reaction area PS are 1% dissociated into ions and electrons, the other 99% are neutral molecules. These neutral particles (radicals) are excited and highly active and will also participate in the change of the etching rate. Therefore, by using the third airflow AF3 to generate turbulence in the second airflow AF2, the distribution of these neutral particles can be effectively controlled to change the uniformity of the etching rate.

[0071] At least one gas outlet S80 is provided, and the gas outlet 80 is connected to the second reaction chamber 310 and is formed below the wafer 910. The gas outlet 80 is mainly used to discharge the waste gas after the reaction in the second reaction chamber 310.

[0072] like Figure 7 As shown, in order to effectively achieve the optimal ratio and optimal flow rate of air intake between the first air inlet Qin1, the second air inlet Qin2, the third air inlet Qin3 and the air outlet 80, a gas flow ratio controller 920 may be further provided or possessed, which is used to control the ratio and flow rate of gas flow between at least one first air inlet Qin1, at least one second air inlet Qin2, multiple third air inlets Qin3, and the air outlet 80.

[0073] like Figure 8 As shown, the second reaction chamber 310 with a radius of 0.1 meters (m) is used (the horizontal axis coordinate is the arc length representing the horizontal distance, and the unit is meter (m), and the horizontal coordinate value of 0 is the center position of the wafer 910 in the second reaction chamber 310). The simulation of the intake of different air inlets is performed, wherein the first characteristic curve L1 is a characteristic curve under the conditions that the intake volume of the first air inlet Qin1 is 0 units, the intake volume of the second air inlet Qin2 is 300 units, and the intake volume of the third air inlet Qin3 is 0 units; and the second characteristic curve L2 is a characteristic curve under the conditions that the intake volume of the first air inlet Qin1 is 0 units, the intake volume of the second air inlet Qin2 is 300 units, and the intake volume of the third air inlet Qin3 is 0 units; and the second characteristic curve L3 is a characteristic curve under the conditions that the intake volume of the first air inlet Qin1 is 0 units, the intake volume of the second air inlet Qin2 is 300 units, and the intake volume of the third air inlet Qin3 is 0 units; and the second characteristic curve L4 is a characteristic curve under the conditions that the intake volume of the first air inlet Qin1 is 0 units, the intake volume of the second air inlet Qin2 is 300 units, and the intake volume of the third air inlet Qin3 is 0 units; and the second characteristic curve L5 is a characteristic curve under the conditions that the intake volume of the first air inlet Qin1 is 0 units, the intake volume of the second air inlet Qin2 is 300 units, and the intake volume of the third air inlet Qin3 is 0 units; and the second characteristic curve L6 is a characteristic curve under the conditions that the intake volume of the first air inlet Qin1 is 0 units, the intake volume of the second air inlet Qin2 is 300 units, and the intake volume of the third air inlet Qin3 is 0 units. The characteristic curve L2 is a characteristic curve under the conditions that the air intake volume of the first air inlet Qin1 is 0 units, the air intake volume of the second air inlet Qin2 is 0 units, and the air intake volume of the third air inlet Qin3 is 300 units; by comparing the first characteristic curve L1 and the second characteristic curve L2, it can be clearly known that in terms of the concentration of the molecular weight distribution (the vertical axis represents the molecular weight concentration percentage), when the third air inlet Qin3 provides air intake, the uniformity of the second characteristic curve L2 is obviously better than that of the first characteristic curve L1.

[0074] like Fig. 9As shown, it also uses a second reaction chamber 310 with a radius of 0.1 meter (m) (the horizontal axis coordinate is the arc length representing the horizontal distance, and its unit is meter (m), and the horizontal coordinate value of 0 is the center position of the wafer 910 in the second reaction chamber 310) to simulate the intake of different air inlets, wherein the third characteristic curve L3 is a characteristic curve under the condition that the intake volume of the first air inlet Qin1 is 0 unit, the intake volume of the second air inlet Qin2 is 100 units, and the intake volume of the third air inlet Qin3 is 0 unit; and the second characteristic curve L4 is a characteristic curve under the condition that the intake volume of the first air inlet Qin1 is 0 unit, the intake volume of the second air inlet Qin2 is 200 units, and the intake volume of the third air inlet Qin3 is 0 unit. The first characteristic curve L1 is a characteristic curve under the condition that the air intake volume of the first air inlet Qin3 is 0 units; and the second characteristic curve L5 is a characteristic curve under the condition that the air intake volume of the first air inlet Qin1 is 0 units, the air intake volume of the second air inlet Qin2 is 100 units, and the air intake volume of the third air inlet Qin3 is 100 units; by comparing the third characteristic curve L3, the fourth characteristic curve L4 and the fourth characteristic curve L5, it can be clearly known that in terms of the concentration of the molecular weight distribution (the vertical axis represents the molecular weight concentration percentage), when the second air inlet Qin2 and the third air inlet Qin3 provide air intake at the same time, the molecular weight concentration at the outer edge of the first reaction chamber 110 has been significantly improved.

[0075] However, the above-mentioned embodiments are used to illustrate the characteristics of the present invention, and their purpose is to enable technicians in this technical field to understand the contents of the present invention and implement them accordingly, rather than to limit the scope of protection of the present invention. Therefore, any other equivalent modifications or modifications that do not depart from the spirit disclosed by the present invention should still be included in the scope defined by the claims.

Claims

1. A method for manufacturing a lateral turbulent inductively coupled plasma etching machine, characterized in that: include: Providing a first chamber having a first reaction chamber; Providing a first coil, which is disposed around the periphery of the first cavity; Providing a second chamber having a second reaction chamber, wherein the second chamber is formed below the first chamber and the second reaction chamber is communicated with the first reaction chamber; Providing a second coil, which is disposed around the periphery of the second cavity; At least one first gas inlet is provided, which is formed on the top surface of the first reaction chamber, and the first gas inlet inputs a first gas flow to form a gas reactant gas mass in the plasma reaction zone of the first reaction chamber and the second reaction chamber to cover the wafer; At least one second gas inlet is provided, which is formed at the periphery of the first reaction chamber and located at the top surface of the second chamber, and the second gas inlet inputs a second gas flow to pass through the edge area of ​​the gas reactant gas mass; A plurality of third gas inlets are provided, which are formed on the side wall of the second reaction chamber and are higher than the top surface of the wafer, and the third gas inlets input a third gas flow to cause the second gas flow to generate turbulence, so as to increase the concentration of gas reactant molecules at the edge of the gas reactant gas group; and At least one gas outlet is provided, which is communicated with the second reaction chamber and formed at a position below the wafer.

2. The manufacturing method according to claim 1, characterized in that: The injection angles of the plurality of third air inlets are between 0 and 60 degrees.

3. The manufacturing method according to claim 1, characterized in that: Also includes: A gas flow ratio controller is provided for controlling the ratio and flow rate of the gas flows among the at least one first gas inlet, the at least one second gas inlet, the plurality of third gas inlets and the gas outlet.

4. A lateral turbulence inductively coupled plasma etching machine structure, characterized in that: include: A first chamber having a first reaction chamber; A first coil, which is disposed around the periphery of the first cavity; A second chamber having a second reaction chamber, the second chamber is formed below the first chamber, and the second reaction chamber is communicated with the first reaction chamber; A second coil, which is disposed around the periphery of the second cavity; at least one first gas inlet formed on a top surface of the first reaction chamber; At least one second gas inlet is formed at the periphery of the first reaction chamber and located at the top surface of the second chamber; A plurality of third gas inlets are formed on the side wall of the second reaction chamber and at a position higher than the top surface of the wafer; and At least one gas outlet is communicated with the second reaction chamber and is formed below the wafer.

5. The etching machine structure according to claim 4, characterized in that: The injection angles of the plurality of third air inlets are between 0 and 60 degrees.

6. The etching machine structure according to claim 4, characterized in that: Also includes: The gas flow ratio controller is used to control the ratio and flow rate of the gas flow among the at least one first gas inlet, the at least one second gas inlet, the plurality of third gas inlets and the gas outlet.

Images