Etching machine structure with coil vertical position dynamically adjustable

Abstract

The present application provides a coil vertical position dynamically adjustable etching machine structure, which comprises: a first plasma reaction cavity having a first reaction chamber; a plurality of first lifting modules, each of which has: a first support member surrounding the periphery fixed to the first reaction chamber; and a plurality of first lifting members slidingly connected to the first support member; and a first coil module fixed to the first lifting members. Through the implementation of the present application, the cleaning of the deposits on different parts of the reaction chamber wall can be dynamically completed.

Description

Technical Field

[0001] This invention relates to an etching machine structure with dynamically adjustable vertical coil position, particularly an etching machine structure with dynamically adjustable vertical coil position for semiconductor etching processes. Background Technology

[0002] For inductively coupled plasma (ICP), the position and length of the coil are crucial. Once the length and position of the coil are fixed, they will not be changed, thus the uniformity of plasma concentration, electron temperature distribution, and the location and extent of local damage within the reaction chamber will also be fixed.

[0003] like Figure 1 As shown, after the etching machine (also known as an etching machine) has been used for a period of time, polymers from the plasma reaction will be deposited on the walls of the reaction chamber (dark area P101 in the figure). The deposition of these polymers will cause distortion of the process parameters in the reaction chamber. In addition, as the thickness of the polymer deposition gradually increases, the level of impurity particles in the reaction chamber will also increase, which will seriously affect the yield.

[0004] Existing inductively coupled plasma etching machines, especially when using dry clean, have limitations on the area where polymer is removed (light-colored area P102 in the figure) because the coil position is fixed in the same position, resulting in the reaction chamber not being effectively cleaned. Summary of the Invention

[0005] This invention relates to an etching machine structure with dynamically adjustable vertical coil position. Its main purpose is to solve the problem of effectively cleaning deposits on the walls of the reaction chamber by adjusting the position of the dynamic coil.

[0006] The objective of this invention and the technical problem it solves are achieved by the following technical solution. According to this invention, an etching machine structure with dynamically adjustable vertical coil position is provided, comprising: a first plasma reaction chamber having a first reaction chamber; a plurality of first lifting modules, each first lifting module having: a first support member fixedly disposed around the periphery of the first reaction chamber; a plurality of first lifting members slidably coupled to the first support member; and a first coil module fixedly disposed on the first lifting member.

[0007] The objectives of this invention and the technical problems it addresses can be further achieved by the following technical measures.

[0008] In the aforementioned etching machine structure, the first support member has a first slide rail, the first lifting member has a first slide channel, and the first slide channel can slide up and down and be connected to the first slide rail.

[0009] In the aforementioned etching machine structure, the first lifting component has a first fixing unit, and the first coil module is fixed to the first fixing unit.

[0010] In the aforementioned etching machine structure, a first sub-lifting component is further provided between the first support member and the first lifting components, which is slidably connected to the first support member. The first lifting components are slidably connected to the first sub-lifting components, respectively.

[0011] In the aforementioned etching machine structure, the first sub-lifting component has a first sub-slide and a first sub-slide rail, and the first sub-slide is combined with the first slide rail, and the first sub-slide rail is combined with the first slide.

[0012] The aforementioned etching machine structure further comprises: a second plasma reaction chamber having a second reaction chamber connected to the first reaction chamber; a plurality of second lifting modules, each of which has: a second support member fixedly disposed around the periphery of the second reaction chamber; a plurality of second lifting members slidably connected to the second support member; and a second coil module fixedly disposed on the second lifting member.

[0013] In the aforementioned etching machine structure, the second support member has a second slide rail, the second lifting member has a second slide channel, and the second slide channel can slide up and down and be connected to the second slide rail.

[0014] In the aforementioned etching machine structure, the second lifting component has a second fixing unit, and the second coil module is fixed to the second fixing unit.

[0015] In the aforementioned etching machine structure, a second sub-lifting component is further provided between the second support member and the second lifting components, which is slidably connected to the second support member. The second lifting components are slidably connected to the second sub-lifting components, respectively.

[0016] In the aforementioned etching machine structure, the second sub-lifting component has a second sub-slide and a second sub-slide rail, and the second sub-slide is combined with the second slide rail, and the second sub-slide rail is combined with the second slide.

[0017] By implementing the present invention, at least the following advantages can be achieved:

[0018] First, it can dynamically clean deposits at different locations on the walls of the reaction chamber.

[0019] Second, it can reduce the level of impurity particles in the reaction chamber.

[0020] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0021] Figure 1 This is an internal view of the reaction chamber of an existing etching machine after it has been in use for a period of time.

[0022] Figure 2A An exploded embodiment of an etching machine structure with dynamically adjustable vertical coil position;

[0023] Figure 2B for Figure 2A A three-dimensional combined embodiment diagram;

[0024] Figure 3A An exploded embodiment diagram showing the addition of a first sub-lifting component to the structural form of an etching machine;

[0025] Figure 3B for Figure 3A A three-dimensional combined embodiment diagram;

[0026] Figure 4A An exploded embodiment diagram of an etching machine structure sample two, where the vertical position of the coil can be dynamically adjusted;

[0027] Figure 4B for Figure 4A A three-dimensional combined embodiment diagram;

[0028] Figure 5A An exploded embodiment diagram showing the addition of a second sub-lifting component to the second structural configuration of the etching machine;

[0029] Figure 5B for Figure 5A A three-dimensional combined embodiment diagram;

[0030] Figure 6 This is a half-side simulation diagram of the electron temperature distribution within the reaction chamber;

[0031] Figure 7 This is a simulation diagram of the cleanup state with the coil in the first position;

[0032] Figure 8 A simulation diagram of the cleanup state with the coil in the second position; and

[0033] Figure 9 This is a simulation diagram of the cleanup state when the coils are evenly distributed.

[0034] [Symbol Explanation]

[0035] P101: Dark area

[0036] P102: Light-colored area

[0037] 100: Sample 1 of an etching machine with dynamically adjustable vertical coil position.

[0038] 110: First plasma reaction chamber

[0039] 111: First Reaction Chamber

[0040] 120: First lifting module

[0041] 121: First support component

[0042] 121a: First slide rail

[0043] 122: First lifting component

[0044] 122a: First Slide

[0045] 122b: First fixed unit

[0046] 130: First coil module

[0047] 140: First sub-elevator

[0048] 140a: First Sub-Slide

[0049] 140b: First sub-rail

[0050] 200: Sample 2 of an etching machine with dynamically adjustable vertical coil position.

[0051] 210: Second plasma reaction chamber

[0052] 211: Second Reaction Chamber

[0053] 220: Second lifting module

[0054] 221: Second support component

[0055] 222: Second lifting component

[0056] 221a: Second slide rail

[0057] 222a: Second slide

[0058] 222b: Second fixed unit

[0059] 230: Second Coil Module

[0060] 240: Second sub-elevator

[0061] 240a: Second Sub-Slide

[0062] 240b: Second sub-rail

[0063] 30: Coil

[0064] A:A area

[0065] B: Area B

[0066] C: C region Detailed Implementation

[0067] To further illustrate the technical means and effects adopted by the present invention to achieve the intended purpose, the following detailed description, in conjunction with the accompanying drawings and preferred embodiments, describes the specific implementation, structure, features, and effects of the etching machine structure with dynamically adjustable coil vertical position proposed according to the present invention.

[0068] like Figures 2A to 3B As shown, this embodiment is an etching machine structure sample 100 with dynamically adjustable vertical coil position, which includes: a first plasma reaction chamber 110; multiple first lifting modules 120; and a first coil module 130.

[0069] The first plasma reaction chamber 110, for example, is a plasma reaction chamber capable of performing etching processes, and the first plasma reaction chamber 110 has a first reaction chamber 111.

[0070] The first lifting module 120 is mainly used to support, adjust and set the height and position of the coil 30. Each first lifting module 120 has: a first support member 121; and multiple first lifting members 122.

[0071] The first support member 121 is fixedly disposed around the periphery of the first reaction chamber 111, and each first support member 121 may have a first slide rail 121a.

[0072] The first lifting member 122 may have a first slide rail 122a and a first fixing unit 122b. The first slide rail 122a can slide up and down and is connected to the first slide rail 121a of the first support member 121. The first slide rail 122a and the first slide rail 121a may be designed to have a certain damping effect, thereby effectively generating a positioning function. The first coil module 130 is fixed on the first fixing unit 122b, so the first coil module 130 can also be moved up and down.

[0073] The first coil module 130 has a winding structure, so the first coil module 130 forms multiple coils 30, which are respectively fixed on the first fixed unit 122b of several first lifting members 122. The first coil module 130 can move vertically up and down and be positioned on the first support member 121 by means of the first lifting member 122.

[0074] The first lifting module 120 described above provides the function of moving the first coil module 130 up and down as a whole. However, in some cases, when more precise movement is required, a first sub-lifting component 140 can be further provided between the first support component 121 and the first lifting components 122 that are combined with it. The first sub-lifting component 140 also has a first sub-slide 140a and a first sub-slide rail 140b.

[0075] The first sub-slide rail 140a is combined with the first slide rail 121a, and the first sub-slide rail 140b is combined with the first slide rail 122a. This allows the first sub-lifting member 140 to slide up and down onto the first support member 121, and the first lifting members 122 to slide up and down onto the first sub-lifting member 140. Thus, when the first sub-lifting member 140 moves up and down, it can drive the first lifting members 122 to move up and down synchronously at the same time.

[0076] like Figures 4A to 5B As shown, this embodiment provides another etching machine structure sample 200 with dynamically adjustable vertical coil position, which is the etching machine structure sample 1 described above, further comprising: a second plasma reaction chamber 210; multiple second lifting modules 220; and a second coil module 230.

[0077] The second plasma reaction chamber 210, for example, is a plasma reaction chamber capable of performing etching processes, and the second plasma reaction chamber 210 has a second reaction chamber 211 connected to the first reaction chamber 111.

[0078] A plurality of second lifting modules 220, and each second lifting module 220 having: a second support member 221; and a plurality of second lifting members 222.

[0079] The second support member 221 is fixed around the periphery of the second reaction chamber 211, and each second support member 221 may have a second slide rail 221a.

[0080] The second lifting member 222 may have a second slide rail 222a and a second fixing unit 222b. The second slide rail 222a is slidably connected to the second slide rail 221a of the second support member 221. Similarly, the second slide rail 222a and the second slide rail 221a may be designed to have a certain damping effect, thereby effectively generating a positioning function. The second coil module 230 is fixed on the second fixing unit 222b, so the second coil module 230 can be moved up and down.

[0081] The second coil module 230 has a spiral structure, so the second coil module 230 forms multiple coils 30, which are respectively fixed on the second fixed units 222b of multiple second lifting members 222. Therefore, the second coil module 230 can be vertically moved up and down and positioned on the second support member 221 by means of the second lifting member 222.

[0082] The aforementioned second lifting module 220 provides the function of moving the second coil module 230 up and down as a whole. However, in some cases, when more precise movement is required, a second sub-lifting component 240 may be further provided between the second support component 221 and the second lifting components 222 that are combined with it. The second sub-lifting component 240 also has a second sub-slide 240a and a second sub-slide rail 240b.

[0083] The second sub-slide rail 240a is combined with the second slide rail 221a, and the second sub-slide rail 240b is combined with the second slide rail 222a. This allows the second sub-lifting member 240 to slide up and down onto the second support member 221, and the second lifting members 222 to slide up and down onto the second sub-lifting member 240. Thus, when the second sub-lifting member 240 moves up and down, it can drive the second lifting members 222 to move up and down synchronously at the same time.

[0084] like Figure 6 As shown, by changing the position of coil 30, plasma at different locations can be removed. Regions A and B in the figure, being near coil 30, receive higher energy, thus removing deposited material. In contrast, region C at the bottom of the figure still retains deposits. The simulation also shows that higher-temperature regions exhibit a higher deposition removal rate, resulting in less polymer deposition on the chamber walls.

[0085] like Figures 7 to 8 As shown, when the coil 30 moves in different heights, the area with higher plasma density also moves, so the location where the deposits can be removed will also move to different locations.

[0086] like Figure 9As shown, the spacing of the coils 30 is evenly distributed, so the plasma density is also distributed accordingly, and the energy for cleaning up the deposits is also evenly distributed.

[0087] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. An etching machine structure with dynamically adjustable vertical coil position, characterized in that... include: A first plasma reaction chamber, which has a first reaction chamber; Multiple first lifting modules, and each first lifting module having: A first support member is fixedly disposed around the periphery of the first reaction chamber; and Multiple first lifting components are slidably connected to the first supporting component in an upward and downward manner; as well as The first coil module has a winding structure, and the first coil module has multiple coils, which are respectively fixed on the first fixed unit of the multiple first lifting components. A first sub-lifting component is further provided between the first support component and the first lifting components it is connected with; The first sub-lifting component has a first sub-slide track and a first sub-slide rail; The first sub-slide rail is combined with the first slide rail of the first support member, and the first sub-slide rail is combined with the first slide rail of the first lifting members, thereby enabling the first sub-lifting member to slide up and down onto the first support member, and the first lifting members to slide up and down onto the first sub-lifting member. Thus, when the first sub-lifting member moves up and down, it can drive the first lifting members to move up and down synchronously at one time.

2. The etching machine structure as described in claim 1, characterized in that, It further has the following characteristics: The second plasma reaction chamber has a second reaction chamber that communicates with the first reaction chamber; Multiple second lifting modules, and each second lifting module having: The second support member is fixedly disposed around the periphery of the second reaction chamber; and Multiple second lifting components are slidably connected to the second support component in both upward and downward directions; as well as The second coil module is fixed to the second lifting component.

3. The etching machine structure as described in claim 2, characterized in that, The second support member has a second slide rail, and the second lifting member has a second slide channel, which can slide up and down and is connected to the second slide rail.

4. The etching machine structure as described in claim 2, characterized in that, The second lifting component has a second fixing unit, and the second coil module is fixed to the second fixing unit.

5. The etching machine structure as described in claim 3, characterized in that, Between the second support member and the second lifting members, a second sub-lifting member is further provided, which is slidably connected to the second support member. The second lifting members are slidably connected to the second sub-lifting members respectively.

6. The etching machine structure as described in claim 5, characterized in that, The second sub-lifting component has a second sub-slide and a second sub-slide rail, and the second sub-slide is combined with the second slide rail, and the second sub-slide rail is combined with the second slide.

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