Laser annealing device

Abstract

The present invention provides a laser annealing device for annealing a substrate carried on a workpiece table, comprising a light source module and a scanning module, wherein the light source module is used to emit the laser required for annealing, and the scanning module can reciprocate within a preset angle and reflect the laser onto the substrate to reciprocately scan the annealing area of ​​the substrate. Each annealing point in the annealing area of ​​the present invention will be repeatedly annealed multiple times, so that the annealing is more uniform and the annealing efficiency is higher, and the moving speed of the workpiece table can also be increased to improve the yield; in addition, each annealing point is annealed multiple times continuously so that the surface temperature of the substrate accumulates and increases, and the power requirement of the laser emitted by the light source module can also be reduced. Under the condition that the light source module can only emit a relatively low-power laser, a better annealing effect can also be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of laser annealing, and in particular to a laser annealing device. Background Art

[0002] Since the beginning of the 21st century, the development of human society has placed higher and higher requirements on the density, performance and versatility of microelectronic devices. Although the current mainstream process node has entered 14nm, it is becoming increasingly difficult and costly to reduce the size of devices. Therefore, "Post-Moore's Law" has replaced Moore's Law as the driving force for the future development of the microelectronics industry. "Post-Moore's Law" no longer simply pursues the reduction of the two-dimensional size of devices, but turns to the direction of three-dimensional design, integration and preparation, which is mainly manifested in the following two aspects: First, by introducing new materials, integrating existing silicon processes, and developing in the vertical direction of devices to improve device performance; second, developing TSV (Through Silicon Via, three-dimensional integration process) to increase chip density, expand chip functions, and improve chip performance. Therefore, "thermal annealing technology", one of the core of microelectronics manufacturing processes, is also facing new problems and challenges.

[0003] When the substrate of a silicon-based semiconductor device is doped with impurities, the doped impurity ions are often in a defective state in the silicon lattice, so thermal annealing is generally required to eliminate crystal defects. Traditional furnace heating annealing technology, even at a temperature as high as 1000°C, still cannot completely eliminate crystal defects and is prone to causing diffusion of doped impurities; if the annealing temperature is lowered, the effective activation rate of impurities is low, less than 1%.

[0004] Laser annealing is performed by irradiating the substrate surface with high-energy pulsed laser light. Figure 1 Figure 1 is a schematic diagram of the surface temperature change of a certain annealing point in the annealing area on the substrate under the action of a pulse laser sequence, where the solid line represents the pulse laser sequence and the dotted line represents the temperature. Figure 1 As shown in the figure, when the spot of a pulsed laser with a certain size, direction and light intensity distribution scans the annealing point on the substrate, the energy carried by a single laser pulse causes the surface temperature of the substrate to rise rapidly, causing a solid-liquid phase transition, while radiating heat and conducting heat to the outside world and conducting heat to the inner layer of the substrate; after a single laser pulse (pulse delay stage), the surface temperature of the substrate drops rapidly; after the continuous action of multiple laser pulse sequences, the surface temperature of the substrate continues to rise and maintains the peak value; after the laser spot scans the annealing point, the surface and inner layers of the substrate continue to lose heat, and the temperature peak drops rapidly. During the highest temperature residence or melting process, the injected impurity ions complete the replacement of the lattice structure, realize the repair of lattice defects, and activate the electrical activity of the doped atoms.

[0005] Figure 2 yes Figure 1Schematic diagram of the change of inner layer annealing depth at the annealing point in FIG. 1 , where the solid line represents the annealing depth and the dotted line represents the temperature. Figure 2 As shown in the figure, at the moment when the light spot passes through a certain annealing point, the annealing depth of the pulse laser sequence is relatively large in the initial stage. In the subsequent stage, as the heat dissipation of the surface and inner layers of the substrate increases, the annealing depth of the laser pulse sequence decreases, and the annealing depth varies greatly. Figure 1 and Figure 2 It can be seen that the annealing uniformity of the existing laser annealing needs to be improved. Summary of the invention

[0006] The object of the present invention is to provide a laser annealing device, which can improve annealing uniformity and annealing efficiency and reduce the demand for laser power.

[0007] In order to achieve the above object, the present invention provides a laser annealing device for annealing a substrate carried on a workpiece table, wherein the workpiece table can drive the substrate to move in steps, comprising:

[0008] A light source module, used for emitting laser light;

[0009] The scanning module can reciprocate within a preset angle and reflect the laser onto the substrate to reciprocately scan the annealing area of ​​the substrate.

[0010] Optionally, the laser spot is a rectangular spot.

[0011] Optionally, the scanning module includes at least one scanning galvanometer, and the scanning galvanometer rotates synchronously and reciprocatingly within the preset angle to reciprocately scan the annealing area of ​​the substrate along the length direction and / or width direction of the matrix light spot.

[0012] Optionally, the annealing times M of the annealing zone satisfies the following formula:

[0013]

[0014] Wherein, n is the number of scanning galvanometers in the first scanning direction along the optical path, D is the scanning width of the rectangular light spot in the first scanning direction, V is the linear velocity of the substrate along the first scanning direction, k x1 is the scanning frequency of the first scanning galvanometer in the first scanning direction, k xn is the scanning frequency of the nth scanning galvanometer in the first scanning direction.

[0015] Optionally, the number N of laser pulses received by the annealing area satisfies the following formula:

[0016]

[0017] Wherein, n is the number of scanning mirrors in the first scanning direction along the optical path, m is the number of scanning mirrors in the other scanning direction, P is the power of the laser, h is the Planck constant, λ is the wavelength of the laser, c is the speed of light, d is the width of the rectangular spot along the first scanning direction, V is the linear velocity of the substrate along the first scanning direction, k is the wavelength of the laser, and x1 is the scanning frequency of the first scanning galvanometer in the first scanning direction, k xn is the scanning frequency of the nth scanning galvanometer in the first scanning direction, k y1 is the scanning frequency of the first scanning galvanometer in the other scanning direction, k ym is the scanning frequency of the mth scanning galvanometer in the other scanning direction.

[0018] Optionally, the scanning frequency of the scanning galvanometer is greater than 10 KHz.

[0019] Optionally, the preset angle is between -3° and 3°.

[0020] Optionally, the light source module includes:

[0021] A laser generating unit, used for emitting laser light;

[0022] A collimation unit, used for collimating the laser into parallel laser light;

[0023] A beam expansion unit, used to expand the diameter of the laser;

[0024] The shaping unit is used to shape the laser into a light spot of a set shape.

[0025] Optionally, the temperature of the laser is greater than 1000 degrees Celsius.

[0026] Optionally, the substrate is a silicon carbide substrate.

[0027] The laser annealing device provided by the present invention is used for annealing a substrate carried on a workpiece table, and comprises a light source module and a scanning module. The light source module is used for emitting laser light required for annealing. The scanning module can reciprocate within a preset angle and reflect the laser light onto the substrate to reciprocately scan the annealing area of ​​the substrate. Therefore, each annealing point in the annealing area will be repeatedly annealed for multiple times, so that the annealing is more uniform and the annealing efficiency is higher, and the moving speed of the workpiece table can also be increased to improve the productivity; in addition, each annealing point is annealed multiple times continuously so that the surface temperature of the substrate is accumulated and increased, and the power requirement of the laser light emitted by the light source module can also be reduced. Under the condition that the light source module can only emit a relatively low-power laser light, a better annealing effect can also be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1It is a schematic diagram of the surface temperature change of a certain annealing point in the annealing area on the substrate under the action of a pulsed laser sequence in the existing laser annealing process;

[0029] Figure 2 for Figure 1 Schematic diagram of the change of inner layer annealing depth at the annealing point in;

[0030] Figure 3 A schematic structural diagram of a laser annealing device provided in Embodiment 1 of the present invention;

[0031] Figure 4 A schematic diagram of the structure of a scanning area formed by a rectangular light spot provided in the first embodiment of the present invention;

[0032] Figure 5 A schematic diagram of the surface temperature change of a certain annealing point in the annealing area on the substrate under the action of the pulse laser sequence provided in the first embodiment of the present invention;

[0033] Figure 6 The first embodiment of the present invention provides Figure 5 Schematic diagram of the change of inner layer annealing depth at the annealing point in;

[0034] Figure 7 A schematic diagram of the structure of a laser annealing device provided in Embodiment 2 of the present invention;

[0035] Figure 8 A schematic diagram of the structure of a scanning area formed by a rectangular light spot provided in the second embodiment of the present invention;

[0036] Fig. 9 A schematic diagram of the structure of a laser annealing device provided in Embodiment 3 of the present invention;

[0037] Fig.10 A schematic diagram of the structure of a scanning area formed by a rectangular light spot provided in the third embodiment of the present invention;

[0038] Fig.11 A schematic diagram of the structure of a laser annealing device provided in Embodiment 4 of the present invention;

[0039] Fig.12 A schematic diagram of the structure of a scanning area formed by a rectangular light spot provided in the fourth embodiment of the present invention;

[0040] Wherein, the accompanying drawings are marked as follows:

[0041] 11-laser generating unit; 12-collimating unit; 13-beam expanding unit; 14-shaping unit; 20-scanning module; 21-scanning galvanometer; 22-first scanning galvanometer; 23-second scanning galvanometer; 30-substrate; 40-workpiece stage. DETAILED DESCRIPTION

[0042] The specific implementation of the present invention will be described in more detail below in conjunction with the schematic diagram. The advantages and features of the present invention will become clearer based on the following description. It should be noted that the drawings are all in a very simplified form and are not in exact proportions, and are only used to facilitate and clearly assist in explaining the purpose of the embodiments of the present invention.

[0043] For ease of description, in this embodiment, an XYZ three-dimensional coordinate system is established with the horizontal rightward direction as the X direction, the vertical upward direction as the Y direction, and the vertical inward direction perpendicular to the paper plane as the Z direction.

[0044] Embodiment 1

[0045] Figure 3 FIG. 1 is a schematic diagram of the structure of a laser annealing device provided in this embodiment. Figure 3 As shown, the laser annealing device is used to anneal a substrate 30 carried on a workpiece stage 40, wherein the substrate 30 is, for example, a silicon carbide (SiC) substrate 30, and the substrate 30 is disposed on the workpiece stage 40, and the workpiece stage 40 can drive the substrate 30 to move in an X-direction stepwise manner. The laser annealing device includes a light source module and a scanning module 20, wherein the light source module, the scanning module 20 and the workpiece stage 40 are sequentially disposed along an optical path.

[0046] The light source module includes a laser generating unit 11, a collimating unit 12, a beam expanding unit 13 and a shaping unit 14 which are arranged in sequence. The laser generating unit 11, the collimating unit 12, the beam expanding unit 13 and the shaping unit 14 are all arranged along the X direction and their optical axes are on the same straight line. The laser generating unit 11 is a laser for emitting laser light. This embodiment is described by taking the laser as a pulsed laser as an example. The power of the pulsed laser is relatively high, so that the temperature of the emitted pulsed laser is greater than 1000 degrees Celsius, thereby meeting the annealing requirements; the optical path of the pulsed laser emitted by the laser generating unit 11 is relatively divergent, and the collimating unit 12 is used to collimate the pulsed laser into a parallel pulsed laser; the beam expanding unit 13 is used to expand the diameter of the pulsed laser so that the size of the pulsed laser meets the annealing requirements; the shaping unit 14 is used to shape the pulsed laser into a light spot of a set shape. Figure 4 As shown, in this embodiment, the shaping unit 14 shapes the pulse laser into a rectangular spot S1, the width direction of the rectangular spot S1 is the X direction, the length direction is the Y direction, and the length of the rectangular spot S1 is b and the width is a. The rectangular spot can increase the area scanned during a single scan, which is beneficial to improving the annealing efficiency, and the energy distribution of the matrix spot along the scanning direction is trapezoidal, which can improve the uniformity of the energy distribution of the spot in the scanning direction, thereby improving the annealing uniformity.

[0047] As an optional embodiment, the laser is not limited to being a pulse laser, but may also be a continuous laser with a temperature greater than 1000 degrees Celsius.

[0048] Please continue reading Figure 3 The scanning module 20 includes a scanning galvanometer 21, which is set at an angle of -45°. The scanning galvanometer 21 can reciprocate around RY at a certain scanning frequency within a preset angle ω, and reflect the pulse laser onto the substrate 30 to reciprocately scan the annealing area of ​​the substrate 30 in the X direction (the scanning direction in this embodiment is the X direction). For example, when the workpiece stage 40 steps to Figure 3 When the scanning galvanometer 21 is in the position shown in FIG. 1 , the scanning galvanometer 21 reciprocates within the preset angle ω, and the rectangular light spot S1 reciprocates along the X direction, specifically reciprocating in the area between P1 and P2 with P0 as the center, forming a shape as shown in FIG. Figure 4 The scanning area L1 shown in FIG. The width e of the scanning area L1 along the X direction is equal to the scanning width of the scanning galvanometer 21 along the X direction, and the width b along the Y direction is equal to the width b of the rectangular light spot S1.

[0049] After the scanning galvanometer 21 anneals one of the scanning areas L1, the work stage 40 moves in steps to move the unannealed area on the substrate 30 into the scanning range of the scanning galvanometer 21. It can be understood that the work stage 40 moves in steps along a preset path so that the substrate 30 is annealed along a preset scanning method, such as a serpentine scanning method or a circular scanning method. For each annealing point on the substrate 30, the pulse laser performs multiple reciprocating scanning annealing, and the number of annealing times for each annealing point can be adjusted according to the scanning frequency of the scanning galvanometer 21, the size of the rectangular light spot, and the linear speed of the work stage 40.

[0050] In the annealing region, the annealing times M of each annealing point satisfy the following formula:

[0051]

[0052] Among them, k x1 is the scanning frequency of the scanning galvanometer 21 , D is the scanning width of the rectangular light spot along the X direction, and V is the linear velocity of the substrate 30 along the X direction.

[0053] In the annealing region, the number N of pulses of the pulsed laser received at each annealing point satisfies the following formula:

[0054]

[0055] Wherein, P is the power of the pulse laser, h is the Planck constant, λ is the wavelength of the pulse laser, c is the speed of light, and d is the width of the rectangular light spot along the X direction (d=a).

[0056] Figure 5 is a schematic diagram of the surface temperature change of a certain annealing point in the annealing area of ​​the substrate 30 under the action of a pulsed laser sequence in the laser annealing device provided in this embodiment, Figure 6 yes Figure 5 Schematic diagram of the change in the annealing depth of the inner layer. Figure 5 and Figure 6 It can be seen that compared with Figure 1 and Figure 2 In this embodiment, since each annealing point is subjected to multiple annealing, the surface temperature of the substrate and the annealing depth can be superimposed. In the initial stage, the surface temperature rises and the annealing depth changes rapidly. In the subsequent stage, as the heat dissipation of the surface and inner layer of the substrate increases, the surface temperature rise and the annealing depth change less. Undoubtedly, continuous multiple annealing gradually increases the peak value of the surface temperature of the substrate, increases the heat conduction depth of the inner layer of the substrate, and makes the heat transfer more balanced, thereby improving the annealing uniformity and activation efficiency, until the solid-liquid phase changes to the depth of the injected impurity ions, and the activation efficiency reaches the maximum. In other words, under certain activation depth constraints, the linear speed of the workpiece stage moving along the preset path and / or the scanning frequency of the scanning galvanometer can be increased to control the number of annealing times, thereby improving the yield. In addition, since continuous multiple annealing causes the surface temperature of the substrate to increase cumulatively, the requirements for pulsed lasers can also be reduced. Under the condition of low pulsed laser power, the annealing effect that can only be achieved with high pulsed laser power can also be achieved.

[0057] In this embodiment, the preset angle ω is relatively small, for example, between -3° and 3°, so as to prevent the pulse laser spot from becoming too wide, and to prevent the spot from deforming or the energy from being not concentrated, thereby affecting the annealing effect. The scanning frequency of the scanning galvanometer 21 is greater than 10KHz, so as to prevent the annealing point on the substrate 30 from being in contact with the pulse laser for too long, and to prevent the substrate 30 from being burned. Of course, in other embodiments, the preset angle and the scanning frequency of the scanning galvanometer 21 can also be in other ranges, and the present invention is not limited thereto.

[0058] Embodiment 2

[0059] like Figure 7 and Figure 8 As shown, different from the first embodiment, in this embodiment, the shaping unit 14 shapes the pulse laser into a rectangular spot S2, and the width direction of the rectangular spot S2 is the Y direction, and the length direction is the X direction.

[0060] See also Figure 7 , the scanning galvanometer 21 can reciprocate at a certain scanning frequency within a preset angle ω, and reflect the pulse laser onto the substrate 30 to reciprocately scan the annealing area of ​​the substrate 30 in the X direction (the scanning direction in this embodiment is the X direction). For example, when the workpiece stage 40 steps to Figure 7When the scanning galvanometer 21 is in the position shown in FIG. 1 , the scanning galvanometer 21 reciprocates within the preset angle ω, and the rectangular light spot S2 reciprocates along the X direction, specifically reciprocating in the area between P1 and P2 with P0 as the center, forming a shape as shown in FIG. Figure 8 The scanning area L2 shown in FIG. The width e of the scanning area L2 along the X direction is equal to the scanning width of the scanning galvanometer 21 along the X direction, and the width a along the Y direction is equal to the width a of the rectangular light spot S1.

[0061] Compared with the first embodiment, this embodiment can change the shape of the scanning area when the scanning direction of the scanning galvanometer 21 remains unchanged.

[0062] Embodiment 3

[0063] like Fig. 9 As shown, different from the first and second embodiments, the scanning module 20 in this embodiment includes two scanning galvanometer mirrors, namely a first scanning galvanometer mirror 22 and a second scanning galvanometer mirror 23. The first scanning galvanometer mirror 22 and the second scanning galvanometer mirror 23 are arranged sequentially along the optical path. The first scanning galvanometer mirror 22 can reciprocate around RZ, and the second scanning galvanometer mirror 23 can reciprocate around RX.

[0064] like Fig. 9 and Fig.10 As shown, in this embodiment, the shaping unit 14 shapes the pulse laser into a rectangular spot S3, the width direction of the rectangular spot S3 is the X direction, and the length direction is the Y direction. When the first scanning galvanometer 22 and the second scanning galvanometer 23 rotate synchronously and reciprocatingly at a certain scanning frequency within a preset angle ω, the pulse laser is reflected onto the substrate 30 to reciprocately scan the annealing area of ​​the substrate 30 in the X direction and the Y direction. For example, when the workpiece stage 40 steps to the position shown in FIG. Fig. 9 When the position is shown, the first scanning galvanometer 22 and the second scanning galvanometer 23 reciprocate within the preset angle ω, and the rectangular light spot S3 reciprocates along the X direction and the Y direction, specifically, reciprocates in the area between P1 and P2 with P0 as the center, and reciprocates in the area between Q1 and Q2 with Q0 as the center, forming a rectangular light spot S3 as shown in FIG. Fig.10 The scanning area L3 shown in FIG. The width f of the scanning area L3 along the X direction is equal to the scanning width of the first scanning galvanometer 22 along the X direction, and the width g along the Y direction is equal to the scanning width of the second scanning galvanometer 23 along the Y direction.

[0065] In the annealing region, the annealing times M of each annealing point satisfy the following formula:

[0066]

[0067] Among them, k x1is the scanning frequency of the first scanning galvanometer 22 , D is the scanning width of the rectangular light spot along the X direction, and V is the linear velocity of the substrate 30 along the X direction.

[0068] In the annealing region, the number N of pulses of the pulsed laser received at each annealing point satisfies the following formula:

[0069]

[0070] Wherein, P is the power of the pulsed laser, h is Planck's constant, λ is the wavelength of the pulsed laser, c is the speed of light, d is the width of the rectangular spot along the X direction (d=a), k y1 is the scanning frequency of the second scanning galvanometer 23 .

[0071] Compared with the first and second embodiments, this embodiment adds a scanning galvanometer, so that the scanning module 20 scans in the X direction and the Y direction at the same time, thereby expanding the size of the scanning area.

[0072] Of course, the scanning module 20 in this embodiment is not limited to including only two scanning galvanometer mirrors, but can also include three, four or five, etc. The multiple scanning galvanometer mirrors rotate back and forth synchronously within the preset angle, and can reciprocately scan the annealing area of ​​the substrate 30 along the length and width directions of the matrix light spot, thereby increasing the yield.

[0073] When there are more than two scanning galvanometers in the scanning module 20, the annealing times M of the annealing area satisfies the following formula:

[0074]

[0075] Wherein, n is the number of scanning mirrors in the first scanning direction along the optical path, D is the scanning width of the rectangular light spot, V is the linear velocity of the substrate 30 along the first scanning direction, k x1 is the scanning frequency of the first scanning galvanometer in the first scanning direction along the optical path, k xn is the scanning frequency of the nth scanning galvanometer in the first scanning direction.

[0076] The number N of pulses of the pulsed laser received in the annealing area satisfies the following formula:

[0077] n>1 and m>1;

[0078] Wherein, n is the number of scanning mirrors in the first scanning direction along the optical path, m is the number of scanning mirrors in the other scanning direction, P is the power of the pulsed laser, h is the Planck constant, λ is the wavelength of the pulsed laser, c is the speed of light, d is the width of the rectangular spot along the first scanning direction, k isy1 is the scanning frequency of the first scanning galvanometer in the other scanning direction, k ym is the scanning frequency of the mth scanning galvanometer in the other scanning direction.

[0079] Embodiment 4

[0080] like Fig.11 and Fig.12 As shown, different from the third embodiment, in this embodiment, the shaping unit 14 shapes the pulse laser into a rectangular spot S4, and the width direction of the rectangular spot S4 is the Y direction, and the length direction is the X direction.

[0081] See also Fig.11 , the first scanning galvanometer 22 and the second scanning galvanometer 23 synchronously reciprocate within a preset angle ω at a certain scanning frequency, and reflect the pulse laser onto the substrate 30 to reciprocately scan the annealing area of ​​the substrate 30 in the X direction and the Y direction. For example, when the workpiece stage 40 steps to Fig.11 When the position is shown, the first scanning galvanometer 22 and the second scanning galvanometer 23 synchronously reciprocate within the preset angle ω, and the rectangular light spot S4 reciprocates along the X direction and the Y direction, specifically, reciprocates in the area between P1 and P2 with P0 as the center, and reciprocates in the area between Q1 and Q2 with Q0 as the center, forming a Fig.12 The scanning area L4 shown in FIG. The width f of the scanning area L4 along the X direction is equal to the scanning width of the first scanning galvanometer 22 along the X direction, and the width g along the Y direction is equal to the scanning width of the second scanning galvanometer 23 along the Y direction.

[0082] Compared with the third embodiment, in this embodiment, the shape of the scanning area can be changed when the scanning directions of the first scanning galvanometer mirror 22 and the second scanning galvanometer mirror 23 remain unchanged.

[0083] In summary, the laser annealing device provided in the embodiment of the present invention is used to anneal a substrate carried on a workpiece table, and includes a light source module and a scanning module. The light source module is used to emit a pulse laser required for annealing. The scanning module can rotate back and forth within a preset angle and reflect the pulse laser onto the substrate to reciprocately scan the annealing area of ​​the substrate. Therefore, each annealing point in the annealing area will be repeatedly annealed multiple times, making the annealing more uniform and the annealing efficiency higher, and can also increase the moving speed of the workpiece table and improve the productivity; in addition, each annealing point is annealed multiple times continuously so that the surface temperature of the substrate accumulates and increases, and the power requirement of the pulse laser emitted by the light source module can also be reduced. Under the condition that the light source module can only emit a pulse laser of lower power, a better annealing effect can also be achieved.

[0084] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any technician in the relevant technical field, without departing from the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the content of the technical solution of the present invention and still falls within the protection scope of the present invention.

Claims

1. A laser annealing device, used for annealing a substrate carried on a workpiece table, wherein the workpiece table can drive the substrate to move in a stepwise manner along a preset path, characterized in that: include: A light source module, used for emitting laser light; A scanning module, when the workpiece stage steps to a position each time, the scanning module can reciprocate within a preset angle, and reflect the laser onto the substrate to reciprocately scan the annealing area of ​​the substrate to form a scanning area; The laser spot is a rectangular spot, so that each annealing point can be annealed multiple times continuously; The scanning module comprises a scanning galvanometer, and the scanning galvanometer rotates synchronously and reciprocatingly within the preset angle to reciprocately scan the annealing area of ​​the substrate at least along the length direction and the width direction of the rectangular light spot.

2. The laser annealing device according to claim 1, characterized in that: The scanning module includes a scanning galvanometer along a first scanning direction of the optical path, and the annealing times M of the annealing area satisfy the following formula: Wherein, D is the scanning width of the rectangular light spot in the scanning direction, V is the linear velocity of the substrate along the scanning direction, k x1 is the scanning frequency of the scanning galvanometer in the first scanning direction.

3. The laser annealing device according to claim 1, characterized in that: The scanning module includes a scanning galvanometer in a first scanning direction along the optical path, and the number N of laser pulses received in the annealing area satisfies the following formula: Wherein, P is the power of the laser, h is Planck's constant, λ is the wavelength of the laser, c is the speed of light, d is the width of the rectangular spot along the scanning direction, V is the linear velocity of the substrate along the scanning direction, k is x1 is the scanning frequency of the scanning galvanometer in the first scanning direction.

4. The laser annealing device according to claim 1, characterized in that: The scanning frequency of the scanning galvanometer is greater than 10 KHz.

5. The laser annealing device according to claim 1, characterized in that: The preset angle is between -3° and 3°.

6. The laser annealing device according to claim 1, characterized in that: The light source module includes: A laser generating unit, used for emitting laser light; A collimation unit, used for collimating the laser into parallel laser light; A beam expansion unit, used to expand the diameter of the laser; The shaping unit is used to shape the laser into a light spot of a set shape.

7. The laser annealing device according to claim 1, characterized in that: The temperature of the laser is greater than 1000 degrees Celsius.

8. The laser annealing device according to claim 1, characterized in that: The substrate is a silicon carbide substrate.

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