Measurement device, measurement method, and vacuum processing device

Abstract

The present application provides a measurement device, a measurement method, and a vacuum processing device that measure a state in a processing container with high accuracy without atmospheric exposure. The measurement device includes: a housing that forms an opening portion having a size corresponding to a second opening of a vacuum processing device, the opening portion being capable of being mounted to the second opening in an airtight manner, wherein the vacuum processing device is provided with a first opening for feeding in and out of a substrate and a second opening different from the first opening in the processing container; a depressurization mechanism that depressurizes an inside of the housing; and a measurement mechanism housed in the inside of the housing, which measures a state in the processing container via the opening portion in a state in which the inside of the housing is depressurized by the depressurization mechanism.

Description

TECHNICAL FIELD

[0001] The present application relates to a measurement device, a measurement method, and a vacuum processing device. BACKGROUND

[0002] Conventionally, a vacuum processing device in which a substrate such as a semiconductor wafer (hereinafter, referred to as "wafer") is arranged in a processing container in a vacuum state, and various processes of processing the substrate are performed, is known. In such a vacuum processing device, a state in the processing container, such as an emission intensity of plasma, influences characteristics of the processed substrate, and therefore it is important to measure the state in the processing container.

[0003] In this regard, a technique of providing an OES (Optical Emission Spectrometer) on a side wall of the processing container via a quartz window, and measuring the emission intensity of plasma in the processing container from the outside of the processing container with the OES, has been proposed.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT DOCUMENTS

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-107264 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present application provides a technique capable of measuring a state in a processing container with high precision without performing atmospheric exposure.

[0009] TECHNICAL SOLUTION TO THE PROBLEM

[0010] A measurement device of one embodiment of the present application includes a housing that is formed with an opening portion having a size corresponding to a second opening of a vacuum processing device, and that is capable of being airtightly attached to the opening portion at the second opening, wherein the vacuum processing device is provided with a first opening for feeding in and out a substrate, and the second opening different from the first opening, in a processing container; a depressurization mechanism that depressurizes an inside of the housing; and a measurement mechanism housed in the inside of the housing, which measures a state in the processing container via the opening portion in a state where the inside of the housing is depressurized by the depressurization mechanism.

[0011] EFFECT OF THE INVENTION

[0012] According to the present application, an effect of being capable of measuring a state in a processing container with high precision without performing atmospheric exposure is obtained. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1FIG. 1 is a diagram schematically showing a plasma etching apparatus of an embodiment.

[0014] Figure 2 FIG. 2 is a cross-sectional view schematically showing a measurement apparatus of an embodiment.

[0015] Figure 3 FIG. 3 is a flowchart showing one example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0016] Figure 4 FIG. 4 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0017] Figure 5 FIG. 5 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0018] Figure 6 FIG. 6 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0019] Figure 7 FIG. 7 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0020] Figure 8 FIG. 8 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0021] Figure 9 FIG. 9 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0022] Figure 10 FIG. 10 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0023] Figure 11 FIG. 11 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0024] Figure 12 FIG. 12 is a diagram showing a specific example of a flow of measuring a state in a process container using the measurement apparatus of the embodiment.

[0025] BRIEF DESCRIPTION OF THE DRAWINGS

[0026] 10 plasma etching apparatus

[0027] 30 process container

[0028] 31 load table

[0029] 84 first access port

[0030] 95 second opening

[0031] 100 measuring device

[0032] 101 housing

[0033] 101A opening portion

[0034] 101B first housing

[0035] 101C second housing

[0036] 101D opening and closing member

[0037] 104A first pipe

[0038] 104B second pipe

[0039] 104C common pipe

[0040] 106 vacuum pump

[0041] 110 robot arm

[0042] 111 sensor DETAILED DESCRIPTION

[0043] Hereinafter, various embodiments will be explained in detail with reference to the drawings. In addition, the same or corresponding portions are marked by the same reference numerals in each drawing.

[0044] In a case where a measurer such as an OES measures a state in a process container from the outside of the process container, the measurer is in a remote position with respect to a substrate arranged in the process container, and thus the measurement accuracy in the vicinity of the substrate decreases.

[0045] Therefore, it is considered that, in a vacuum processing apparatus, the process container is made to be open to the atmosphere, and a measurer such as an OES is arranged in the vicinity of the substrate, and the measurer directly measures a state in the process container. However, in the vacuum processing apparatus, once the process container is made to be open to the atmosphere, since temperature adjustment and moisture control in the process container and the like are performed, a considerable amount of time is required until the substrate processing is started again, and the productivity decreases.

[0046] In addition, it is also considered that a measurer such as an OES is arranged in a transport system such as a transport arm which transports a substrate to a vacuum processing apparatus while keeping a vacuum state unchanged, and the measurer is transported into the process container by the transport system, and thus a state in the process container is measured without making the process container open to the atmosphere. However, the measurer is heavier than the substrate, and thus in a case where the transport of the measurer based on the transport system is performed, a transport system having strength capable of bearing the weight of the measurer is required. Therefore, the transport of the measurer based on the transport system is not practical.

[0047] Therefore, a technology for measuring the state in the process container with high accuracy without atmospheric exposure is desired.

[0048] [Structure of measurement target apparatus]

[0049] A measurement target apparatus that is a target of measurement by the measurement apparatus will be described. The measurement target apparatus is a vacuum processing apparatus that arranges a substrate such as a wafer in a process container in a vacuum state and performs a prescribed substrate processing. In the present embodiment, a case where the measurement target apparatus is a plasma etching apparatus that performs plasma etching on a substrate will be described as an example.

[0050] Figure 1 is a diagram that schematically shows a plasma etching apparatus of the embodiment. The plasma etching apparatus 10 has a process container 30 that is hermetically formed and is an electrically grounded potential. The process container 30 is formed in a cylindrical shape and is formed of, for example, aluminum having an anodized film formed on a surface. The process container 30 defines a processing space in which plasma is generated. Inside the process container 30, a stage 31 that supports a wafer W horizontally is housed.

[0051] The stage 31 is a substantially cylindrical shape with a bottom surface facing a vertical direction, and a bottom surface on an upper side is a placement surface 36d. The placement surface 36d of the stage 31 is formed to be larger than a size of the wafer W. The stage 31 includes a base 33 and an electrostatic chuck 36.

[0052] The base 33 is formed of a conductive metal such as aluminum. The base 33 functions as a lower electrode. The base 33 is supported by a support table 34 of an insulator, and the support table 34 is provided to a bottom portion of the process container 30.

[0053] An upper surface of the electrostatic chuck 36 is a flat disc shape, and the upper surface is the placement surface 36d on which the wafer W is placed. The electrostatic chuck 36 is provided in a center of the stage 31 in a plan view. The electrostatic chuck 36 has an electrode 36a and an insulator 36b. The electrode 36a is provided inside the insulator 36b, and a direct current power supply 42 is connected to the electrode 36a. The electrostatic chuck 36 can adsorb the wafer W with a Coulomb force by applying a direct current voltage to the electrode 36a from the direct current power supply 42. Further, the electrostatic chuck 36 is provided with a heater 36c inside the insulator 36b. The heater 36c is supplied with electric power through a power supply mechanism described later, and controls a temperature of the wafer W.

[0054] Further, a focus ring 35 formed of, for example, single-crystal silicon is provided to an outer periphery of an upper side of the stage 31. Also, a cylindrical inner wall member 37 formed of, for example, quartz is provided so as to surround a periphery of the stage 31 and the support table 34.

[0055] A power supply rod 50 is connected to the susceptor 33. The first RF power source 40a is connected to the power supply rod 50 via a first matching device 41a, and the second RF power source 40b is connected to the power supply rod 50 via a second matching device 41b. The first RF power source 40a is a power source for generating plasma, and can supply high-frequency electric power of a prescribed frequency to the susceptor 33 of the stage 31 from the first RF power source 40a. The second RF power source 40b is an ion attraction (bias) power source, and can supply high-frequency electric power of a prescribed frequency lower than that of the first RF power source 40a to the susceptor 33 of the stage 31 from the second RF power source 40b.

[0056] A refrigerant flow path 33d is formed inside the susceptor 33. The refrigerant flow path 33d is connected to a refrigerant inlet pipe 33b at one end portion and to a refrigerant outlet pipe 33c at the other end portion. The plasma etching apparatus 10 can control the temperature of the stage 31 by circulating a refrigerant such as cooling water or the like in the refrigerant flow path 33d. Alternatively, the plasma etching apparatus 10 can have a refrigerant flow path provided inside the susceptor 33 for each region in which the wafer W and the focus ring 35 are placed, and can individually control the temperature of the wafer W and the focus ring 35. Alternatively, the plasma etching apparatus 10 can supply a gas for heat transfer to the back surface side of the wafer W and the focus ring 35 to individually control the temperature. For example, a gas supply pipe for supplying a gas such as helium or the like for heat transfer (back surface side gas) to the back surface of the wafer W can be provided so as to pass through the stage 31 or the like. The gas supply pipe is connected to a gas supply source. With the above-described structure, the wafer W held by the electrostatic chuck 36 on the upper surface of the stage 31 is controlled to a prescribed temperature.

[0057] On the other hand, a shower head 46 having a function as an upper electrode is provided above the stage 31 in a manner so as to be opposed to the stage 31 in parallel. The shower head 46 and the stage 31 function as a pair of electrodes (upper electrode and lower electrode).

[0058] The shower head 46 is provided to a top wall portion of the process container 30. The shower head 46 includes a main body portion 46a and an upper top plate 46b constituting an electrode plate, and is supported to the upper portion of the process container 30 with an insulating member 47 interposed therebetween. The main body portion 46a is made of an electrically conductive material such as aluminum having an anodized film formed on the surface, and can support the upper top plate 46b in a manner so as to be detachable to the upper top plate 46b at the lower portion thereof.

[0059] In the interior of the main body 46a, a gas diffusion chamber 46c is provided, and a large number of gas flow-through holes 46d are formed in the bottom of the main body 46a in such a manner as to be located in the lower portion of the gas diffusion chamber 46c. Further, in the upper top plate 46b, a gas introduction hole 46e is formed in such a manner as to penetrate the upper top plate 46b in the thickness direction, and the gas introduction hole 46e overlaps the gas flow-through holes 46d described above. According to this structure, the process gas supplied to the gas diffusion chamber 46c is supplied in a shower-like manner into the processing container 30 via the gas flow-through holes 46d and the gas introduction hole 46e.

[0060] In the main body 46a, a gas introduction port 46g for introducing the process gas into the gas diffusion chamber 46c is formed. One end of a gas supply pipe 45a is connected to the gas introduction port 46g. The other end of the gas supply pipe 45a is connected to a process gas supply source 45 that supplies the process gas. A mass flow controller (MFC) 45b and an on-off valve V2 are provided in the gas supply pipe 45a in this order from the upstream side. Further, the process gas for plasma etching is supplied from the process gas supply source 45 to the gas diffusion chamber 46c via the gas supply pipe 45a, and is supplied in a shower-like manner into the processing container 30 from the gas diffusion chamber 46c via the gas flow-through holes 46d and the gas introduction hole 46e.

[0061] In the shower head 46 described above as the upper electrode, a variable direct current power supply 48b is electrically connected via a low pass filter (LPF) 48a. The variable direct current power supply 48b can be turned on and off by an on-off switch 48c. The current and voltage of the variable direct current power supply 48b and the on and off of the on-off switch 48c are controlled by a control section 90 described later. Further, as described later, when high frequency is applied to the placement table 31 from the first RF power supply 40a and the second RF power supply 40b to generate plasma in the processing space, the on-off switch 48c is turned on as needed by the control section 90 to apply a prescribed direct current voltage to the shower head 46 as the upper electrode.

[0062] Further, a cylindrical ground conductor 30a is provided in such a manner as to extend from the side wall of the processing container 30 to a position higher than the height position of the shower head 46. The cylindrical ground conductor 30a has a top wall in the upper portion thereof.

[0063] An exhaust port 81 is formed in the bottom of the processing container 30, and an exhaust device 83 is connected to the exhaust port 81 via an exhaust pipe 82. The exhaust device 83 has a vacuum pump, and the processing container 30 can be depressurized to a prescribed vacuum degree by operating the vacuum pump.

[0064] On the other hand, a first opening 84 for sending in and out the wafer W is provided in the side wall of the processing container 30. A gate valve G that opens and closes the first opening 84 is provided in the first opening 84. The first opening 84 is connected to the vacuum transfer chamber in airtight manner via the gate valve G, and the wafer W can be sent in and out of the vacuum transfer chamber in a vacuum atmosphere.

[0065] A deposition shield 86 is provided along the inner wall surface in the inside of the side portion of the processing container 30. The deposition shield 86 prevents deposition of etching byproducts (deposits) on the processing container 30. The deposition shield 86 is detachable.

[0066] The plasma etching apparatus 10 of the above-described structure is controlled as a whole by a control section 90. The control section 90 is, for example, a computer that controls each section of the plasma etching apparatus 10. The plasma etching apparatus 10 is controlled as a whole by the control section 90.

[0067] In the plasma etching apparatus 10, the state in the processing container 30 affects the characteristics of the processed wafer W, and therefore it is important to measure the state in the processing container 30. In this regard, a technique has been proposed in which an OES is provided in the side wall of the processing container 30 via a quartz window, and the emission intensity of plasma in the processing container 30 is measured from the outside of the processing container 30 by the OES.

[0068] However, in the case where the state in the processing container 30 is measured from the outside of the processing container 30 by a measurer such as an OES, the measurer is located far from the wafer W disposed in the processing container 30, and therefore the measurement accuracy near the wafer W is degraded.

[0069] Therefore, it has been considered that, in the plasma etching apparatus 10, the processing container 30 is opened to the atmosphere, and a measurer such as an OES is disposed near the wafer W, and the state in the processing container 30 is directly measured by the measurer. However, in the plasma etching apparatus 10, once the processing container 30 is opened to the atmosphere, a considerable amount of time is required until the substrate processing is started again due to temperature adjustment and moisture control in the processing container 30, and the like, and there is a problem that the productivity is reduced.

[0070] Therefore, it has been considered that, in the plasma etching apparatus 10, the processing container 30 is opened to the atmosphere, and a measurer such as an OES is disposed near the wafer W, and the state in the processing container 30 is directly measured by the measurer. However, in the plasma etching apparatus 10, once the processing container 30 is opened to the atmosphere, a considerable amount of time is required until the substrate processing is started again due to temperature adjustment and moisture control in the processing container 30, and the like, and there is a problem that the productivity is reduced.

[0071] Therefore, the plasma etching apparatus 10 of the embodiment is provided with an opening for measuring the state in the processing container 30 in addition to the first opening 84 for the in-out of the wafer W. For example, as shown in FIG. 1, the plasma etching apparatus 10 is provided with a second opening 95 on the side opposite to the stage 31 on which the wafer W is placed, with respect to the first opening 84. The second opening 95 is hermetically closed by a lid 96. Further, the second opening 95 is detachably provided with a measuring apparatus 100 described later. When the operator performs the measurement of the state in the processing container 30, the measuring apparatus 100 is attached to the plasma etching apparatus 10 which is the object of the measurement by the measuring apparatus 100. Figure 1

[0072] [Structure of Measuring Apparatus]

[0073] Next, the structure of the measuring apparatus 100 of the embodiment will be described. Figure 2 is a cross-sectional view schematically showing the measuring apparatus 100 of the embodiment. Figure 2 shows a state in which the measuring apparatus 100 is attached to the plasma etching apparatus 10. In addition, in each of the following drawings, the plasma etching apparatus 10 is schematically shown.

[0074] The measuring apparatus 100 has a housing 101 which is formed with an opening portion 101A of a size corresponding to the second opening 95 of the plasma etching apparatus 10. The housing 101 is provided with an O-ring 101O at the portion which contacts the plasma etching apparatus 10 around the opening portion 101A. Further, the housing 101 is mounted on a transport vehicle 102. The measuring apparatus 100 is transported to the position of the plasma etching apparatus 10 by the transport vehicle 102, and the opening portion 101A of the housing 101 is disposed in correspondence with the second opening 95. Further, the opening portion 101A of the housing 101 is hermetically mounted in the second opening 95 by a screw clamp or the like.

[0075] The housing 101 is composed of a first housing 101B and a second housing 101C which communicates with the first housing 101B via an openable and closable opening and closing member 101D. In the first housing 101B, a measuring mechanism described later is accommodated. In the second housing 101C, the opening portion 101A is formed.

[0076] ​In the first housing 101B, a first pipe 104A provided with a first valve 105A is connected. In the second housing 101C, a second pipe 104B provided with a second valve 105B is connected. The first pipe 104A and the second pipe 104B are connected to a vacuum pump 106 via a common pipe 104C. The vacuum pump 106 is mounted on a loading platform 103 provided in the transport vehicle 102. The second pipe 104B branches into a leak pipe 104D midway to the common pipe 104C. A leak valve 105C is provided in the leak pipe 104D. The vacuum pump 106, the first pipe 104A, the second pipe 104B, and the common pipe 104C constitute a depressurization mechanism that depressurizes the inside of the housings 101. In a case where measurement of the state in the process container 30 is performed, the measuring device 100 depressurizes the inside of the first housing 101B and the inside of the second housing 101C by causing the vacuum pump 106 to operate via the first pipe 104A, the second pipe 104B, and the common pipe 104C.

[0077] In the first housing 101B, a first pipe 104A provided with a first valve 105A is connected. In the second housing 101C, a second pipe 104B provided with a second valve 105B is connected. The first pipe 104A and the second pipe 104B are connected to a vacuum pump 106 via a common pipe 104C. The vacuum pump 106 is mounted on a loading platform 103 provided in the transport vehicle 102. The second pipe 104B branches into a leak pipe 104D midway to the common pipe 104C. A leak valve 105C is provided in the leak pipe 104D. The vacuum pump 106, the first pipe 104A, the second pipe 104B, and the common pipe 104C constitute a depressurization mechanism that depressurizes the inside of the housings 101. In a case where measurement of the state in the process container 30 is performed, the measuring device 100 depressurizes the inside of the first housing 101B and the inside of the second housing 101C by causing the vacuum pump 106 to operate via the first pipe 104A, the second pipe 104B, and the common pipe 104C.

[0078] The arm 110 is composed of an arm portion in which a plurality of arms are connected indirectly, and a support portion that rotatably and vertically supports the arm portion. The arm 110 is configured so that the plurality of arms of the arm portion extend linearly and are stretchable by overlapping each other. The arm 110 is capable of extending the plurality of arms of the arm portion to the opening portion 101A side, and causing the tip end to enter the process container 30 from the opening portion 101A. The arm 110 is controlled by a control portion not shown in a unified manner. The control portion has a user interface that performs reception of various operation instructions and display of the state of operation. An operator performs operation instructions to the user interface. The operation instructions are, for example, operation instructions that specify the operation of the arm 110 individually. Alternatively, the operation instructions can be instructions that specify a series of operations. For example, the operation instructions can be instructions that specify a series of operations for measuring the state in the process container 30 by the sensor 111.

[0079] Further, the arm 110 is detachably mounted to the first housing 101B. That is, the arm 110 can be replaced with another arm provided with another sensor different from the sensor 111 at the tip end.

[0080] Further, the arm 110 has a cover 112 at the middle of the arm portion. In a case where the cover 96 is removed from the second exit and entrance 95, the cover 112 hermetically seals the second exit and entrance 95 in place of the cover 96.

[0081] The sensor 111 is transported by the robot arm 110 to a prescribed position in the processing container 30 through the opening portion 101A, and measures a state in the processing container 30 at the prescribed position. The sensor 111 is transported, for example, to a position corresponding to above the wafer W placed on the placement table 31, and measures a state in the processing container 30 at the position corresponding to above the wafer W. The state in the processing container 30 that can be measured by the sensor 111 is, for example, an electron density of plasma generated in the processing container 30, a frequency of high frequency (RF) applied in order to generate the plasma, a mass of each ion in the plasma, a pressure in the processing container 30, a temperature and a surface shape of the wafer W, and the like. Further, the sensor 111 can also measure a consumption amount and a position of the focus ring 35 in a case where the sensor 111 is transported by the robot arm 110 to a position corresponding to above the focus ring 35 around the wafer W. The sensor 111 can be a sensor capable of measuring a plurality of different states together, or can be a sensor capable of measuring each state individually. Data representing the state measured by the sensor 111 can be stored in a prescribed storage device in the measuring device 100, or can be transmitted to a communication device communicably connected to the measuring device 100 in a wired or wireless manner. The communication device can be, for example, the plasma etching device 10, or can be another plasma etching device other than the plasma etching device 10.

[0082] Further, the measuring device 100 has a removal unit for removing the cover 96 from the second exit / entrance 95 of the plasma etching device 10. For example, in the measuring device 100, the robot arm 120 and the robot hand 121 provided to a front end of the robot arm 120 are provided as the removal unit. The robot arm 120 is configured of an arm portion in which a plurality of arms are connected indirectly, and a support portion that supports the arm portion to be rotatable and liftable. The robot arm 120 can extend the plurality of arms of the arm portion to the cover 96 side, and grip the cover 96 with the robot hand 121, and remove the cover 96 from the second exit / entrance 95. The robot arm 120 and the robot hand 121 are controlled by a control portion not shown in a unified manner. The control portion has a user interface that performs reception of various operation instructions and display of a state of operation. An operator performs operation instruction to the user interface. The operation instruction is, for example, an operation instruction that individually designates an operation of the robot arm 120 and an operation of the robot hand 121. Further, the operation instruction can also be an instruction that designates a series of operations. For example, the operation instruction can also be an instruction that designates a series of operations for removing the cover 96 from the second exit / entrance 95.

[0083] Next, one example of measurement using the measuring device 100 will be described. Figure 3 is a flowchart showing one example of a flow of measurement of a state in the processing container 30 using the measuring device 100 of the embodiment.

[0084] First, the opening portion 101A of the housing 101 is airtightly installed at the second port 95 (step S101). Then, the measuring device 100 depressurizes the inside of the housing 101 by operating the vacuum pump 106 (step S102). Then, the measuring device 100 measures the state in the processing container 30 via the opening portion 101A with the measuring mechanism (the robot arm 110 and the sensor 111) in a state where the inside of the housing 101 has been depressurized (step S103).

[0085] Next, a specific example of measurement using the measuring device 100 will be described. Figures 4-12 is a view illustrating a specific example of a flow of measuring the state in the processing container 30 using the measuring device 100 of the embodiment.

[0086] When the operator measures the state in the processing container 30, as shown in Figure 4 , the transport vehicle 102 is moved to transport the measuring device 100 to the position of the plasma etching device 10. At this time, the first valve 105A is controlled to be in an open state. Then, the vacuum pump 106 depressurizes the inside of the first housing 101B in a state where the opening and closing member 101D is closed.

[0087] Next, as shown in Figure 5 , the opening portion 101A of the housing 101 (the second housing 101C) is airtightly installed at the second port 95. Figure 5 The process corresponds to step S101 of Figure 3 .

[0088] When the opening portion 101A of the housing 101 (the second housing 101C) is installed at the second port 95, as shown in Figure 6 , the first valve 105A is switched from the open state to the closed state, and the second valve 105B is controlled to be in the open state. Then, the vacuum pump 106 depressurizes the inside of the second housing 101C. Thereby, both the inside of the first housing 101B and the inside of the second housing 101C, that is, the entire inside of the housing 101 is depressurized. Figure 6 The process corresponds to step S102 of Figure 3 .

[0089] Next, as shown in Figure 7 , the opening and closing member 101D is opened, and the first housing 101B communicates with the second housing 101C. Then, the second valve 105B is switched from the open state to the closed state.

[0090] Next, as shown in Figure 8As shown, the robot arm 120 extends the multiple arms of the arm portion toward the cover 96, grasps the cover 96 with the robot hand 121, and removes the cover 96 from the second access door 95. This opens the second access door 95, connecting the housing 101 to the processing container 30. The robot arm 120 then retracts the cover 96 to a predetermined retraction position within the second housing 101C.

[0091] Then, if Figure 9 As shown, the robot arm 110 extends its multiple arms toward the opening 101A, allowing the tip of the robot arm 110, equipped with a sensor 111, to enter the processing container 30 through the opening 101A. The sensor 111 is thereby transported through the opening 101A to a predetermined position within the processing container 30. Furthermore, the robot arm 110 airtightly attaches the cover 112 provided on the arm to the second port 95. Thus, the second port 95 is airtightly sealed by the cover 112. After the second port 95 is attached to the cover 112, the plasma etching apparatus 10 generates plasma within the processing container 30. The sensor 111 then measures the conditions within the processing container 30 at a predetermined position within the processing container 30. For example, the sensor 111 measures the conditions within the processing container 30 at a position corresponding to above the wafer W placed on the stage 31. Alternatively, the robot arm 110 may sequentially move the tip of the robot arm 110 to multiple positions within the processing container 30. Thus, the sensor 111 is sequentially transported to multiple positions within the processing container 30. Then, the sensor 111 measures the state inside the processing container 30 at each position as the wafer is sequentially transported. For example, the sensor 111 measures the state inside the processing container 30 at a position corresponding to above the center of the wafer W placed on the mounting table 31, and then measures the state inside the processing container 30 at a position corresponding to above the edge of the wafer W. Figure 9 The process corresponds to Figure 3 Step S103.

[0092] When the measurement based on the sensor 111 is completed, the plasma etching apparatus 10 stops the generation of plasma in the processing container 30. When the generation of plasma in the processing container 30 stops, as shown in FIG. Figure 10 As shown, the robot arm 110 retracts the multiple arms of the arm portion to move the front end provided with the sensor 111 away from the housing 101 (first housing 101B).

[0093] Then, if Figure 11 As shown, the robot arm 120 extends the arms of the arm portion toward a predetermined retracted position in the second housing 101C, grips the cover 96 with the robot hand 121, and attaches the cover 96 to the second entrance 95. As a result, the second entrance 95 is hermetically sealed by the cover 96.

[0094] Then, if Figure 12 As shown, with the opening and closing member 101D closed, the second housing 101C is exposed to the atmosphere by opening the leakage valve 105C. After measuring the state inside the processing container 30 in this order, the operator moves the transport vehicle 102 and removes the measuring device 100 from the plasma etching apparatus 10.

[0095] As described above, the measurement device 100 of this embodiment includes a housing 101 that can be airtightly mounted at the second port 95. The housing 101 includes an opening 101A having dimensions corresponding to the second port 95 of the plasma etching apparatus 10. Furthermore, the measurement device 100 includes a decompression mechanism for depressurizing the interior of the housing 101. Furthermore, the measurement device 100 includes a measurement mechanism housed within the housing 101. While the interior of the housing 101 is depressurized by the decompression mechanism, the measurement mechanism measures the state within the processing vessel 30 through the opening 101A. Consequently, the measurement device 100 can accurately measure the state within the processing vessel 30 without exposing the wafer to the atmosphere. Furthermore, since the measurement device 100 measures the state within the processing vessel 30 without using a transport system for transporting wafers W, the transport of measurement instruments by the transport system can be omitted, resulting in a reduction in the strength required of the transport system.

[0096] Furthermore, the measuring mechanism of the measuring device 100 of this embodiment includes a robot arm 110 whose front end can enter and exit the processing container 30 through the opening 101A, and a sensor 111 disposed at the front end of the robot arm 110 for measuring the state within the processing container 30. Thus, the measuring device 100 can directly measure the state within the processing container 30 at any position within the processing container 30 without exposing the interior of the processing container 30 to the atmosphere.

[0097] Furthermore, the robot arm 110 of this embodiment is detachably mounted on the housing 101 (first housing 101B). This allows the measuring device 100 to easily replace the robot arm 110 with another robot arm equipped with another sensor. Consequently, various conditions within the processing container 30 can be measured using various sensors.

[0098] Further, the depressurization mechanism of the measurement device 100 of the present embodiment depressurizes the inside of the first housing 101B in a state where the opening portion 101A of the second housing 101C is not attached to the second port 95, and the opening and closing member 101D is closed. Also, the depressurization mechanism depressurizes the inside of the second housing 101C in a state where the opening portion 101A of the second housing 101C is attached to the second port 95. Also, the robot arm 110, in a state where the inside of the first housing 101B and the inside of the second housing 101C have been depressurized, causes the tip provided with the sensor 111 to advance into and retreat from the processing container 30 from the opening portion 101A after the opening and closing member 101D and the second port 95 are opened. Thus, the measurement device 100 can use the second housing 101C as a vacuum preparation chamber, and as a result, it is possible to avoid the case where particles and moisture in the atmosphere enter the first housing 101B and the processing container 30.

[0099] Further, the plasma etching device 10 of the present embodiment has the processing container 30 provided with the first port 84 for advancing and retreating the wafer W, and the second port 95 capable of detachably attaching the measurement device 100 that measures the state inside the processing container 30. Thus, the plasma etching device 10 can measure the state inside the processing container 30 with high precision without performing atmospheric exposure. Further, the plasma etching device 10 measures the state inside the processing container 30 without using the conveyance system that conveys the wafer W, and thus it is possible to omit the conveyance of the measurement device based on the conveyance system, and as a result, it is possible to reduce the strength required for the conveyance system.

[0100] In addition, it should be understood that the embodiments disclosed herein are illustrative only and not restrictive of the scope of the present application. The above-described embodiments can be omitted, replaced, changed in various ways without departing from the scope and spirit of the appended claims.

[0101] For example, in the above-described embodiments, the case where the measurement device 100 is used for measurement of the state inside the processing container 30 of the plasma etching device 10 is described as an example, but the technology of the present application is not limited thereto. The device to be measured by the measurement device 100 is a device having a processing container in a vacuum state, and can be any device.

[0102] Further, in the above-described embodiments, the case where the second port 95 of the plasma etching device 10 is closed in airtightness by the lid 96 is described as an example, but the technology of the present application is not limited thereto. For example, a gate valve G can be provided at the second port 95 of the plasma etching device 10 and can be opened and closed. In this case, the measurement device 100 can omit the removal unit (for example, the robot arm 120 and the robot hand 121) for removing the lid 96 from the second port 95.

[0103] Further, in the above-described embodiment, the case where the state inside the process container 30 is measured using the sensor 111 provided at the tip of the robot arm 110 is described as an example, but the technology of the present application is not limited thereto. For example, the measuring device 100 can also place a sensor wafer having the same sensing function as the sensor 111 on the placement table 31 with the robot arm, and directly measure the state inside the process container 30 with the sensing wafer.

Claims

1. A measuring device characterized by: measuring a state in a processing container of a vacuum processing device, the measuring device being detachable with respect to the processing container, and including: a measuring mechanism that measures the state in the processing container; a first housing that houses the measuring mechanism therein; a second housing that communicates with the first housing via an openable and closable member, and is formed with an opening portion that connects with a port of the processing container; and a depressurizing mechanism that depressurizes the first housing and the second housing.

2. The measuring device according to claim 1, characterized by: the measuring mechanism including: an arm whose tip is capable of entering and exiting the processing container from the opening portion; and a sensor that measures the state in the processing container, provided at the tip of the arm.

3. The measuring device according to claim 2, characterized by: the arm being detachably attached to the housing.

4. The measuring device according to claim 2, characterized by: the depressurizing mechanism depressurizing the inside of the first housing when the opening portion of the second housing is not attached to the processing container, and the openable and closable member is closed, and depressurizing the inside of the second housing when the opening portion of the second housing is attached to the processing container, the arm, in a state where the inside of the first housing and the inside of the second housing have been depressurized, entering the processing container from the opening portion with the tip provided with the sensor after the openable and closable member and the port are opened.

5. A measuring method characterized by: the measuring method using the measuring device according to claims 1 to 4, including: a step of airtightly attaching the opening portion to the port of the processing container; a step of depressurizing the inside of the second housing by the depressurizing mechanism; a step of opening the openable and closable member to communicate the depressurized first housing with the second housing; and a step of measuring the state in the processing container by the measuring mechanism via the opening portion in a state where the inside of the first housing and the inside of the second housing have been depressurized by the depressurizing mechanism.

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