Heating Device for PECVD Equipment, Vacuum Coating Equipment, and Heating Method

Abstract

The present invention provides a heating device for a PECVD device, a vacuum coating device and a heating method. The heating device includes: a vacuum chamber; a loading assembly disposed in the vacuum chamber for loading a workpiece to be heated; a heating assembly at least partially disposed in the vacuum chamber, the heating assembly including a radiation source rotatably connected to the vacuum chamber and correspondingly disposed with the loading assembly; wherein, the heating assembly radiatively heats the workpiece to be heated through the radiation source. In the technical solution of the present invention, since the radiation source is rotatably connected to the vacuum chamber, the radiation source has a rotation function, which can adjust the thermal radiation angle of the radiation source, thereby increasing the range of its thermal radiation and the uniformity of thermal radiation, realizing dynamic heating and uniform heating of the silicon wafer, and further making the overall temperature of the silicon wafer more uniform during heating, ensuring good process effects.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum coating equipment, and more particularly, to a heating device for a PECVD device, a vacuum coating equipment, and a heating method. Background Art

[0002] Currently, in the production process of photovoltaic cells, a large number of silicon wafers must be heated to a specific temperature within a certain period of time (usually a relatively short period of time), and the temperature of each silicon wafer must be within a specific temperature range. Too high or too low a temperature will affect the process uniformity. The common heating method is radiative non-contact heating.

[0003] However, in the related art, the thermal field generated by the radiation source is uneven, and this unevenness of the thermal field causes the silicon wafers to be heated unevenly, resulting in uneven overall temperature of the silicon wafers and affecting their process effects. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art or related art.

[0005] To this end, an object of the present invention is to provide a heating device for a PECVD device.

[0006] Another object of the present invention is to provide a vacuum coating equipment.

[0007] Another object of the present invention is to provide a heating method.

[0008] To achieve the above object, an embodiment of the present invention provides a heating device for a PECVD device, the heating device comprising: a vacuum chamber; a loading assembly disposed within the vacuum chamber for loading a workpiece to be heated; a heating assembly at least partially disposed within the vacuum chamber, the heating assembly including a radiation source rotatably connected to the vacuum chamber and correspondingly disposed with the loading assembly; wherein, the heating assembly radiatively heats the workpiece to be heated through the radiation source.

[0009] In this technical solution, since the radiation source is rotatably connected to the vacuum chamber, the radiation source has a rotation function, which can adjust the thermal radiation angle of the radiation source, thereby increasing the range and uniformity of its thermal radiation, realizing dynamic heating and uniform heating of the silicon wafers, and further making the overall temperature of the silicon wafers more uniform during heating, ensuring good process effects. It avoids the problem of uneven overall temperature of the silicon wafers when heating the silicon wafers by the radiative non-contact heating method in the related art.

[0010] In addition, the heating device for a PECVD device in the above embodiment provided by the present invention may further have the following additional technical features:

[0011] In the above technical solution, the heating device further includes a driving assembly, which is connected to the heating assembly, and the driving assembly can drive the radiation source to rotate.

[0012] In this technical solution, the driving assembly can provide power for the rotation of the radiation source, and by controlling the rotation angle and direction of the radiation source, the rotation requirements of the radiation source can be met, thereby realizing the dynamic heating and uniform heating of the silicon wafer to ensure good process effects of the silicon wafer.

[0013] In any of the above technical solutions, the heating assembly further includes a quartz tube, the radiation source is an infrared lamp tube, the quartz tube is inserted into the vacuum chamber along the first direction, the radiation source is inserted into the quartz tube along the first direction, the radiation source can rotate relative to the quartz tube, at least one end of the quartz tube extends out of the vacuum chamber, and at least one end of the radiation source extends out of the quartz tube.

[0014] In this technical solution, the quartz tube provides an installation space for the infrared lamp tube, enabling the infrared lamp tube to rotate within the quartz tube. At the same time, the quartz tube increases the infrared radiation amount of the infrared lamp tube, improves the heat generation efficiency of the infrared lamp tube, and thus ensures that the radiation source can meet the intensity requirements of thermal radiation.

[0015] In any of the above technical solutions, the driving assembly includes: a driving part; a transmission part, which is connected to the driving part and the radiation source; wherein, the driving part is used to drive the transmission part to act so as to drive the radiation source to rotate.

[0016] In this technical solution, the driving part provides power for the transmission part, causing the transmission part to act. The transmission part has a transmission function, so it can drive the radiation source to rotate, thereby realizing the dynamic heating and uniform heating functions of the heating device for the silicon wafer.

[0017] In any of the above technical solutions, the driving part includes: a motor, which is arranged on the vacuum chamber; a rotating block, which is connected to the motor and the transmission part.

[0018] In this technical solution, the motor, as a power source, can provide rotational power for the rotating block, thereby ensuring the normal transmission of the transmission part.

[0019] In any of the above technical solutions, the rotating block has a first end and a second end opposite to the first end. The transmission part includes: a fixing block, which is provided with a mounting hole; a wiring terminal head, at least part of which is arranged in the mounting hole, and the wiring terminal head is fixedly connected to one end of the radiation source extending out of the quartz tube; a first connecting rod, which is rotatably connected to the first end and one end of the fixing block; a second connecting rod, which is rotatably connected to the second end and the other end of the fixing block.

[0020] In this technical solution, the driving part provides torque for the rotating block, and the first end and the second end of the rotating block rotate around the center of the rotating block, so that the first connecting rod and the second connecting rod move synchronously and reversely in the second direction. Under the action of the first connecting rod and the second connecting rod, the fixed block, the wiring terminal and the radiation source rotate simultaneously in the quartz tube, thereby realizing the dynamic heating and uniform heating functions of the heating device for the silicon wafer.

[0021] In any of the above technical solutions, the heating device includes a plurality of heating components, and the plurality of heating components are arranged at intervals in the second direction.

[0022] In this technical solution, an infrared lamp tube is correspondingly arranged in each heating component. Under the control of the driving component, each infrared lamp tube can rotate synchronously and reciprocally, which increases the thermal radiation angle of each infrared lamp tube and realizes the dynamic and uniform heating of the heating device for multiple silicon wafers. Thus, the multiple silicon wafers arranged in the vacuum chamber can be heated evenly and the temperature can rise uniformly, ensuring a good process effect. Furthermore, the heating efficiency of the heating device is improved, and the requirement of heating multiple silicon wafers is satisfied at the same time.

[0023] In any of the above technical solutions, the loading component includes a carrier plate and transmission rollers, and the transmission rollers can drive the carrier plate and the workpiece to be heated loaded on the carrier plate to move reciprocally.

[0024] In this technical solution, the reciprocating movement of the workpiece to be heated cooperates with the rotation of the radiation source, so that the radiation source can radiate and heat the silicon wafer on the carrier plate more evenly, making the overall temperature of the silicon wafer on the carrier plate more uniform, and further better ensuring a good process effect.

[0025] In any of the above technical solutions, the heating device further includes a sealing and fixing component, which is arranged on the vacuum chamber body to fix the heating component and seal the vacuum chamber.

[0026] In this technical solution, the sealing and fixing component fixes one end of the quartz tube extending out of the vacuum chamber body on the outer wall of the vacuum chamber body, thereby ensuring that the radiation source can be correctly installed in the vacuum chamber, and further ensuring that the heating device can realize its uniform heating function. In addition, the sealing and fixing component can block the gap between the quartz tube and the vacuum chamber, preventing the vacuum chamber from communicating with the outside world, and further ensuring that the silicon wafer can be heated in a vacuum environment to guarantee its heating process effect.

[0027] The technical solution of the second aspect of the present invention provides a vacuum coating device, which includes: a heating device for a PECVD device according to any one of the technical solutions of the first aspect; an inlet chamber valve connected to the vacuum chamber of the heating device; an outlet chamber valve connected to the vacuum chamber of the heating device; a detection device for detecting the position of the workpiece to be heated; and a control system connected to the heating device, the inlet chamber valve, the outlet chamber valve, and the detection device, and the control system can control the opening and closing of the inlet chamber valve and the outlet chamber valve.

[0028] The vacuum coating device provided by the technical solution of the second aspect of the present invention includes a heating device for a PECVD device according to any one of the technical solutions of the first aspect, and thus has all the beneficial effects of any of the above technical solutions, which will not be elaborated here.

[0029] In the above solution, the vacuum coating device integrates a heating device, a control system, and other components, so that the vacuum coating device not only has the function of automatic heating, but also has the function of uniform heating, thus meeting the requirements of automatic control and high performance of the device.

[0030] The technical solution of the third aspect of the present invention provides a heating method, which uses the above vacuum coating device for heating. The heating method includes the following steps: Step S10: Transfer the workpiece to be heated into the vacuum chamber; Step S20: While the workpiece to be heated reciprocates in its transfer direction, perform dynamic heating on the workpiece to be heated; Step S30: Transfer the workpiece to be heated out of the vacuum chamber.

[0031] In the above solution, since the radiation source has a rotating function, the thermal radiation angle of the radiation source can be adjusted, thereby increasing the range of its thermal radiation and the uniformity of thermal radiation, realizing dynamic heating and uniform heating of the silicon wafer, and further making the overall temperature of the silicon wafer more uniform during heating, ensuring good process effects. It avoids the problem of uneven overall temperature of the silicon wafer when using the non-contact heating method of radiation to heat the silicon wafer in the related art. In addition, while performing dynamic heating on the workpiece to be heated, the workpiece to be heated reciprocates in its transfer direction, that is, the reciprocating movement of the workpiece to be heated cooperates with the rotation of the radiation source, so that the radiation source can radiate and heat the silicon wafer on the carrier plate more uniformly, thereby making the overall temperature of the silicon wafer on the carrier plate more uniform, and further better ensuring good process effects.

[0032] The additional aspects and advantages of the present invention will become apparent in the following description section or be learned through the practice of the present invention. Description of the Drawings

[0033] The above and / or additional aspects and advantages of the present invention will become apparent and easy to understand from the description of the embodiments in conjunction with the following drawings, where:

[0034] Figure 1 Shows a schematic structural diagram of a heating device for a PECVD device according to an embodiment of the present invention;

[0035] Figure 2 Shows Figure 1 A partial enlarged view of the heating device for a PECVD device in (the infrared lamp tube is in an unrotated state);

[0036] Figure 3 Shows Figure 1 Another partial enlarged view of the heating device for a PECVD device in from another angle (the infrared lamp tube is in an unrotated state);

[0037] Figure 4 Shows Figure 1 Another partial enlarged view of the heating device for a PECVD device from another angle in (the infrared lamp tube is in a rotated state);

[0038] Figure 5 Shows Figure 1 An assembly relationship diagram of the infrared lamp tube, connection terminal, fixing block, connecting rod and rotating shaft of the heating device for a PECVD device in ;

[0039] Figure 6 Shows Figure 1 A cross-sectional view of the rotating shaft in ;

[0040] Figure 7 Shows a schematic structural diagram of a vacuum coating device according to an embodiment of the present invention;

[0041] Figure 8 Shows a flowchart of a heating method according to an embodiment of the present invention.

[0042] Wherein, Figures 1 to 7 The corresponding relationship between the reference numerals and component names in is as follows:

[0043] 10. Vacuum chamber; 20. Loading assembly; 22. Carrier plate; 24. Transfer roller; 30. Heating assembly; 31. Rotating support; 32. Radiation source; 34. Quartz tube; 40. Driving assembly; 41. Rotating shaft; 412. Fixed part; 414. Rotating part; 416. Limiting part; 42. Driving part; 422. Motor; 424. Rotating block; 4242. First end; 4244. Second end; 44. Transmission part; 442. Fixed block; 444. Connection terminal; 446. First connecting rod; 448. Second connecting rod; 50. Sealing and fixing assembly; 52. Sealing flange; 54. Fixing screw; 56. Sealing ring; 100. Heating device; 200. Component to be heated; 300. Inlet chamber valve; 400. Outlet chamber valve; 500. Detection device; 600. Control system. Detailed implementation manners

[0044] In order to more clearly understand the above objects, features, and advantages of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation manners. It should be noted that, without conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0045] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited by the specific embodiments disclosed below.

[0046] It should be noted that the workpiece to be heated 200 in the present application is a silicon wafer. The first direction in the present application refers to the width direction of the vacuum chamber 10, and the second direction refers to the length direction of the vacuum chamber 10. It can be understood that: the first direction is perpendicular to the transmission direction of the workpiece to be heated 200, and the second direction is the transmission direction of the workpiece to be heated 200, that is, the transmission direction of the workpiece to be heated 200 and the arrangement direction of the heating assembly 30 are perpendicular, and reference can be made to Figure 2 In addition, it can also be understood that the projection of the transmission direction of the workpiece to be heated 200 and the arrangement direction of the heating assembly 30 on the top or bottom of the vacuum chamber 10 intersects.

[0047] In other implementation manners, the first direction can also be the length direction of the vacuum chamber 10, and the second direction is the width direction of the vacuum chamber 10. It can be understood that: the transmission direction of the workpiece to be heated 200 and the arrangement direction of the heating assembly 30 are parallel.

[0048] It should be noted that in the present application, the silicon wafer moves relative to the radiation source 32, so that the energy coming from a specific angle of the radiation source 32 is not fixed at a fixed position on the silicon wafer, but moves within a certain range, increasing the temperature uniformity in these areas. Therefore, the radiation source 32 can be rotatably arranged in the vacuum chamber 10, and the silicon wafer can be movably arranged in the vacuum chamber 10. Specifically, the silicon wafer is placed on the carrier plate 22, the carrier plate is placed on the transmission roller 24, and the transmission roller 24 rotates, thereby realizing the movement of the silicon wafer on the transmission roller 24. The radiation source 32 can move independently, and the silicon wafer can also move independently. Of course, the radiation source 32 and the silicon wafer can move together. In this way, the temperature field uniformity of the silicon wafer can be improved to different degrees.

[0049] The following refers to Figures 1 to 8 Describe a heating device 100, a vacuum coating device, and a heating method for a PECVD device according to some embodiments of the present invention.

[0050] As Figures 1 to 4As shown in the figure, the present invention and embodiments thereof provide a heating device 100 for a PECVD device. The heating device 100 includes a vacuum chamber 10, a loading component 20, and a heating component 30. Among them, the loading component 20 is arranged in the vacuum chamber 10, and the loading component 20 is used for loading the workpiece to be heated 200. The heating component 30 is partially arranged in the vacuum chamber 10. The heating component 30 includes a radiation source 32. The radiation source 32 is rotatably connected to the vacuum chamber 10 and is correspondingly arranged with the loading component 20. The heating component 30 radiatively heats the workpiece to be heated 200 through the radiation source 32.

[0051] In the above setting, since the radiation source 32 is rotatably connected to the vacuum chamber 10, the radiation source 32 has a rotating function, which can adjust the thermal radiation angle of the radiation source 32, thereby increasing the range and uniformity of its thermal radiation, realizing the dynamic heating and uniform heating of the silicon wafer, and further making the overall temperature of the silicon wafer more uniform during heating, ensuring good process effects. It avoids the problem of uneven overall temperature of the silicon wafer when heating the silicon wafer by the radiation non-contact heating method in the related art.

[0052] Specifically, as Figures 2 to 4 shown, in an embodiment of the present invention, the heating device 100 further includes a driving component 40. The driving component 40 is connected to the heating component 30, and the driving component 40 can drive the radiation source 32 to rotate.

[0053] In the above setting, the driving component 40 can provide power for the rotation of the radiation source 32. By controlling the rotation angle and direction of the radiation source 32, the rotation requirements of the radiation source 32 can be met, and further the dynamic heating and uniform heating of the silicon wafer can be realized to ensure good process effects of the silicon wafer.

[0054] Specifically, as Figures 2 to 4 shown, in an embodiment of the present invention, the heating component 30 further includes a quartz tube 34. The radiation source 32 is an infrared lamp tube. The quartz tube 34 is inserted into the vacuum chamber 10 along a first direction, the radiation source 32 is inserted into the quartz tube 34 along the first direction, the radiation source 32 can rotate relative to the quartz tube 34, one end of the quartz tube 34 extends out of the vacuum chamber 10, and one end of the radiation source 32 extends out of the quartz tube 34.

[0055] Among them, in one case: when one end of the quartz tube 34 extends out of the vacuum chamber 10, the other end can be arranged in the vacuum chamber 10, and the quartz tube 34 in the vacuum chamber 10 can be supported by setting support columns. At this time, one end of the radiation source 32 extends out of the quartz tube 34, that is, extends out of the vacuum chamber 10, and the other end is arranged in the vacuum chamber 10; in another case: both ends of the quartz tube 34 extend out of the vacuum chamber 10, and at least one end of the radiation source 32 extends out of the quartz tube 34.

[0056] In the above setting, the quartz tube 34 provides an installation space for the infrared lamp tube, enabling the infrared lamp tube to rotate within the quartz tube 34. At the same time, the quartz tube 34 increases the infrared radiation amount of the infrared lamp tube, improves the heating efficiency of the infrared lamp tube, and further ensures that the radiation source 32 can meet the intensity requirements of thermal radiation.

[0057] Specifically, as Figure 1 shown, in the embodiment of the present invention, the heating assembly 30 further includes a rotating support 31. One end of the infrared lamp tube is sleeved on the rotating support 31. The rotating support 31 is fixedly connected to the infrared lamp tube. The rotating support 31 is adapted to the inner diameter shape of the quartz tube 34, so that when the infrared lamp tube rotates, the rotating support 31 can slide and rotate relative to the inner wall of the quartz tube 34 to ensure that the infrared lamp tube can rotate smoothly and freely.

[0058] Specifically, as Figures 2 to 4 shown, in the embodiment of the present invention, the driving assembly 40 includes a driving part 42 and a transmission part 44. Among them, the transmission part 44 is connected to the driving part 42 and the heating assembly 30. The driving part 42 is used to drive the transmission part 44 to act to drive the radiation source 32 to rotate.

[0059] In the above setting, the driving part 42 provides power for the transmission part 44, enabling the transmission part 44 to act. The transmission part 44 has a transmission function, so that it can drive the radiation source 32 to rotate, and further realizes the dynamic heating and uniform heating functions of the heating device 100 for the silicon wafer.

[0060] Specifically, as Figures 2 to 4 shown, in the embodiment of the present invention, the rotating block 424 has a first end 4242 and a second end 4244 opposite to the first end 4242. The transmission part 44 includes a fixed block 442, a connection terminal 444, a first connecting rod 446, and a second connecting rod 448. Among them, the fixed block 442 is provided with a mounting hole. The connection terminal 444 is partially fixedly arranged in the mounting hole. The connection terminal 444 is fixedly connected to one end of the radiation source 32 extending out of the quartz tube 34. The first connecting rod 446 is rotatably connected to the first end 4242 and one end of the fixed block 442. The second connecting rod 448 is rotatably connected to the second end 4244 and the other end of the fixed block 442.

[0061] In the above setting, the driving part 42 provides torque for the rotating block 424. The first end 4242 and the second end 4244 of the rotating block 424 rotate around the center of the rotating block 424, so that the first connecting rod 446 and the second connecting rod 448 move synchronously and reversely in the second direction. Under the action of the first connecting rod 446 and the second connecting rod 448, the fixed block 442, the connection terminal 444, and the radiation source 32 rotate simultaneously within the quartz tube 34, and further realizes the dynamic heating and uniform heating functions of the heating device 100 for the silicon wafer.

[0062] It should be noted that the circuit inside the wiring terminal 444 for placing the infrared lamp tube serves two purposes. On the one hand, it protects the circuit. On the other hand, as a clamping part, under the action of external force, the wiring terminal 444 and the infrared lamp tube rotate around the central axis of the infrared lamp tube. The fixing block 442 clamps the infrared lamp tube. The fixing block 442 is sleeved on the wiring terminal 444 and fixedly connected to the wiring terminal 444. Specifically, in this application, the fixing block 442 is an integrally formed plate, and a mounting hole is opened in the middle for mounting the wiring terminal 444.

[0063] Of course, according to the actual situation, the fixing block 442 can be set as two clamping blocks with the same specifications. The clamping blocks are mirror-spliced and fixed by screws. The splicing part forms a mounting hole for mounting the wiring terminal 444. The clamping blocks are fixed by screwing to form the fixing block 442, which is convenient for installation and disassembly, convenient for locking, and avoids relative displacement between the fixing block 442 and the wiring terminal 444. Threaded mounting holes are provided on the fixing block 442 and are symmetrically arranged.

[0064] Specifically, as Figure 5 and Figure 6 shown, in the embodiment of the present invention, the transmission part 44 further includes a rotating shaft 41. One end of the first connecting rod 446 is hinged to the fixing block 442 through the rotating shaft 41. More specifically, the rotating shaft 41 includes a fixing part 412, a rotating part 414 and a limiting part 416. Among them, the rotating part 414 is arranged between the fixing part 412 and the limiting part 416 and is connected to the fixing part 412 and the limiting part 416. Two mounting openings are provided at both ends of the fixing block 442, and the rotating shaft 41 is respectively inserted into the two mounting openings. The rotating part 414 is adapted to the mounting opening and has a gap. The rotating part 414 is rotatably arranged in the mounting opening. The fixing part 412 is provided with threads for fixing the fixing block 442 on the second connecting rod 448. The limiting part 416 is provided with a limiting shoulder, which can prevent the fixing block 442 from disengaging from the rotating shaft 41.

[0065] Specifically, as Figures 2 to 4 shown, in the embodiment of the present invention, the heating device 100 includes a plurality of heating components 30, and the plurality of heating components 30 are arranged at intervals along the second direction.

[0066] In the above setting, an infrared lamp tube is correspondingly arranged in each heating component 30. Each infrared lamp tube can realize synchronous reciprocating rotation under the control of the driving component 40. This increases the thermal radiation angle of each infrared lamp tube, realizes the dynamic and uniform heating of the heating device 100 for multiple silicon wafers, so that the multiple silicon wafers arranged in the vacuum chamber 10 can be uniformly heated and raised in temperature, ensuring good process effects. Furthermore, the heating efficiency of the heating device 100 is improved, and at the same time, the requirements for heating multiple silicon wafers are met.

[0067] Specifically, as Figure 1 shown, in an embodiment of the present invention, the loading assembly 20 includes a carrier plate 22 and a transmission roller 24. The carrier plate 22 is placed on the transmission roller 24, and the transmission roller 24 can drive the carrier plate 22 and the workpiece to be heated 200 loaded on the carrier plate 22 to reciprocate.

[0068] In the above setting, the reciprocating movement of the workpiece to be heated 200 cooperates with the rotation of the radiation source 32, so that the radiation source 32 can radiate and heat the silicon wafer on the carrier plate 22 more evenly, so that the overall temperature of the silicon wafer on the carrier plate 22 is more uniform, and further better ensures a good process effect.

[0069] Specifically, as Figure 1 shown, in an embodiment of the present invention, the heating device 100 further includes a sealing and fixing assembly 50. The sealing and fixing assembly 50 is arranged on the vacuum chamber 10 for fixing the heating assembly 30 and sealing the vacuum chamber 10.

[0070] In the above setting, the sealing and fixing assembly 50 fixes one end of the quartz tube 34 extending out of the vacuum chamber 10 on the outer wall of the vacuum chamber 10, so as to ensure that the radiation source 32 can be correctly installed in the vacuum chamber 10, and further ensure that the heating device 100 can achieve its uniform heating function. In addition, the sealing and fixing assembly 50 can block the gap between the quartz tube 34 and the vacuum chamber 10, prevent the vacuum chamber 10 from communicating with the outside world, and further ensure that the silicon wafer can be heated in a vacuum environment to ensure its heating process effect.

[0071] Specifically, as Figure 1 shown, in an embodiment of the present invention, the sealing and fixing assembly 50 includes a sealing flange 52, fixing screws 54 and a sealing ring 56. The fixing screws 54 are used to fix the sealing flange 52 on the vacuum chamber 10. The sealing ring 56 is sleeved on the extending end of the quartz tube 34 and is located in the sealing groove of the sealing flange 52. The sealing flange 52 squeezes the sealing ring 56 to deform it to block the gap between the quartz tube 34 and the vacuum chamber 10.

[0072] It should be noted that the first connecting rod 446 and the second connecting rod 448 are provided with a plurality of mounting holes, and the number of mounting holes should be the same as the number of infrared lamp tubes. The mounting holes are used for mounting the rotating shaft 41. The rotating shaft 41 passes through the mounting holes on the first connecting rod 446 or the second connecting rod 448, and there is a gap between the mounting holes and the rotating part 414, and they can rotate relative to each other. When the motor 422 drives the rotating block 424 to rotate, it drives the first connecting rod 446 and the second connecting rod 448 to rotate synchronously.

[0073] As Figure 4As shown in the figure, the upper and lower connecting rods are fixed to the upper and lower ends of the fixed block 442 through a rotating shaft 41. At this time, the infrared lamp tubes are connected in series by the connecting rods and the rotating shaft 41. There is a gap between the rotating shaft 41 and the connecting rod, and they can rotate relative to each other, enabling each infrared lamp tube to obtain a symmetrical rotating torque. The motor 422 and the rotating block 424 are fixed together. The upper and lower outer circles of the rotating block 424 and the upper and lower inner circles of the connecting rod interact under the rotation of the motor 422. When the motor 422 drives the rotating block 424 to reciprocate and rotate by a certain angle, all the infrared lamp tubes, under the action of the connecting rod and the rotating shaft 41, reciprocate and rotate synchronously, realizing the large-angle and dynamic heating of the silicon wafers above by the infrared lamp tubes, making the overall temperature of all silicon wafers more uniform, and ensuring a good final process effect.

[0074] Inside the vacuum chamber 10, the silicon wafers are placed on the carrier plate 22. The carrier plate 22 enters from the loading end provided on the side wall of the vacuum chamber 10 and is conveyed into the interior of the chamber through the transmission rollers 24. When the vacuum chamber 10 is in the working state, the control system 600 controls the motor 422 to start. Under the action of the motor 422, the rotating block 424 drives the upper and lower connecting rods to move in opposite directions. Since the infrared lamp tube is fixed to the wiring terminal 444, the wiring terminal 444 is fixed to the fixed block 442, and the fixed block 442 is fixed to the rotating shaft 41, the linked rotating shaft 41, fixed block 442, wiring terminal 444, infrared lamp tube, and rotating support 31 rotate as a whole, realizing the reciprocating rotation of the infrared lamp tube. By controlling the synchronous movement of the rotation of the infrared lamp tube and the carrier plate 22, the silicon wafers can be heated more evenly, improving the process effect.

[0075] As Figure 7 As shown in the figure, the present invention also provides a vacuum coating device, including a heating device 100 for PECVD equipment, an inlet chamber valve 300, an outlet chamber valve 400, a detection device 500, and a control system 600 as described in any one of the embodiments of the first aspect. Among them, the inlet chamber valve 300 is connected to the vacuum chamber 10 of the heating device 100, and the outlet chamber valve 400 is connected to the vacuum chamber 10 of the heating device 100. The detection device 500 is used to detect the position of the workpiece to be heated 200. The control system 600 is connected to the heating device 100, the inlet chamber valve 300, the outlet chamber valve 400, and the detection device 500. The control system 600 can control the opening and closing of the inlet chamber valve 300 and the outlet chamber valve 400.

[0076] In the above settings, the vacuum coating device integrates the heating device 100, the control system 600, and other components, enabling the vacuum coating device to not only have the function of automatic heating but also the function of uniform heating, thus meeting the requirements of automatic control and high performance of the device.

[0077] The vacuum coating equipment provided by the technical solution of the second aspect of the present invention includes the heating device 100 for PECVD equipment in any one of the embodiments of the first aspect, and thus has all the beneficial effects of any one of the above embodiments, which will not be elaborated here.

[0078] As Figure 8 shown, the present invention also provides a heating method for PECVD equipment. The heating method uses the above-mentioned vacuum coating equipment for heating, and the heating method includes the following steps:

[0079] Step S10: Transfer the workpiece to be heated into the vacuum chamber;

[0080] Step S20: While the workpiece to be heated reciprocates in its conveying direction, dynamically heat the workpiece to be heated;

[0081] Step S30: Transfer the workpiece to be heated out of the vacuum chamber.

[0082] In the above setting, since the radiation source 32 has a rotating function, the thermal radiation angle of the radiation source 32 can be adjusted, thereby increasing the range and uniformity of its thermal radiation, realizing the dynamic heating and uniform heating of the silicon wafer, and further making the overall temperature of the silicon wafer more uniform during heating, ensuring good process effects. It avoids the problem of uneven overall temperature of the silicon wafer when heating the silicon wafer by the radiation non-contact heating method in the related art.

[0083] In addition, while dynamically heating the workpiece to be heated, the workpiece to be heated reciprocates in its conveying direction, that is, the workpiece 200 reciprocates and cooperates with the rotation of the radiation source 32, so that the radiation source 32 can radiate and heat the silicon wafer on the carrier plate 22 more evenly, thereby making the overall temperature of the silicon wafer on the carrier plate 22 more uniform, and further better ensuring good process effects.

[0084] It should be noted that the in-chamber valve 300, the out-chamber valve 400, and the vacuum chamber 10 are connected to the vacuum pumping device. When the carrier plate 22 carrying the silicon wafer enters the vacuum chamber 10 through the in-chamber valve 300 and leaves the vacuum chamber 10 through the out-chamber valve 400 after being heated in the vacuum chamber 10, the in-chamber valve 300, the out-chamber valve 400, and the vacuum chamber 10 are all in a vacuum state.

[0085] It should be noted that the detection device 500 in the present application includes a first detection device, a second detection device, and a third detection device.

[0086] (1) The carrier plate 22 carrying the silicon wafer enters the vacuum chamber 10 through the in-chamber opening.

[0087] After the first detection device detects that the carrier plate 22 has completely entered the vacuum chamber 10, the control system 600 controls the closing of the in-chamber valve 300, and the carrier plate 22 stops statically on the transfer rollers 24.

[0088] The carrier plate 22 moves repeatedly as the transfer rollers 24 rotate. At the same time, the infrared lamp tube rotates repeatedly under the action of the driving assembly 40.

[0089] After the second detection device detects that the in-chamber valve 300 has been closed, the control system 600, on the one hand, controls the driving part 42 to drive the transmission part 44 to swing and rotate, that is, the infrared lamp tube also swings and rotates synchronously, and on the other hand, controls the transfer rollers 24 to rotate back and forth along the transmission direction of the carrier plate 22.

[0090] Within the preset heating time, the above actions are continuously performed, that is, the dynamic heating method is adopted, which can improve the heating uniformity.

[0091] (3) After the carrier plate 22 is heated, it leaves the vacuum chamber 10 through the out-chamber valve 400.

[0092] When the control system 600 detects that the preset heating time has been reached, the control system 600, on the one hand, controls the driving part 42 and the transfer rollers 24 to stop moving, and on the other hand, the control system 600 controls the opening of the out-chamber valve 400. When the third detection device detects that the out-chamber valve 400 has been opened, the control system 600 controls the transfer rollers 24 to transfer the carrier plate 22 out of the vacuum chamber 10.

[0093] The first detection device and the second detection device are arranged on the vacuum chamber 10 or the in-chamber valve 300 for detecting the opening and closing of the valve. The third detection device is arranged on the vacuum chamber 10 or the out-chamber valve 400 for detecting the opening and closing of the valve.

[0094] From the above description, it can be seen that since the radiation source 32 is rotatably connected to the vacuum chamber 10, the radiation source 32 has a rotating function, which can adjust the thermal radiation angle of the radiation source 32, thereby increasing the range and uniformity of its thermal radiation, realizing the dynamic heating and uniform heating of the silicon wafer, and further making the overall temperature of the silicon wafer more uniform during heating, ensuring good process effects. It avoids the problem of uneven overall temperature of the silicon wafer when heating the silicon wafer by the radiation non-contact heating method in the related technology.

[0095] In the present invention, the terms "first", "second", "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term "plural" means two or more, unless otherwise clearly defined. Terms such as "installed", "connected", "joined", "fixed" should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "joined" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0096] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention.

[0097] In the description of this specification, the descriptions of terms such as "one embodiment", "some embodiments", "specific embodiments", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0098] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A heating device (100) for a PECVD apparatus, characterized in that, The heating device (100) includes: A vacuum chamber (10); A loading assembly (20) disposed within the vacuum chamber (10), the loading assembly (20) being configured to load a workpiece to be heated (200); A heating assembly (30), at least partially disposed within the vacuum chamber (10), the heating assembly (30) including a radiation source (32) rotatably connected to the vacuum chamber (10) and correspondingly disposed with the loading assembly (20); Wherein, the heating assembly (30) radiatively heats the workpiece to be heated (200) through the radiation source (32); The heating device (100) further includes a driving assembly (40) connected to the heating assembly (30), the driving assembly (40) being capable of driving the radiation source (32) to rotate; The heating assembly (30) further includes a quartz tube (34), the radiation source (32) being an infrared lamp tube, the quartz tube (34) being inserted into the vacuum chamber (10) along a first direction, the radiation source (32) being inserted into the quartz tube (34) along the first direction, and the radiation source (32) being capable of rotating relative to the quartz tube (34); The driving assembly (40) includes: A driving part (42); A transmission part (44) connected to the driving part (42) and the radiation source (32); Wherein, the driving part (42) is configured to drive the transmission part (44) to act so as to drive the radiation source (32) to rotate; The driving part (42) includes: A motor (422) disposed on the vacuum chamber (10); A rotating block (424) connected to the motor (422) and the transmission part (44); The rotating block (424) has a first end (4242) and a second end (4244) disposed opposite to the first end (4242), and the transmission part (44) includes: A fixing block (442) provided with a mounting hole; A wiring terminal (444), at least partially fixedly disposed within the mounting hole, the wiring terminal (444) being fixedly connected to an end of the radiation source (32) extending out of the quartz tube (34); A first connecting rod (446) rotatably connected to the first end (4242) and one end of the fixing block (442); A second connecting rod (448) rotatably connected to the second end (4244) and the other end of the fixing block (442); The heating assembly further includes a rotating support member, one end of the infrared lamp tube being sleeved on the rotating support member, the rotating support member being fixedly connected to the infrared lamp tube, and the rotating support member being adapted to the inner diameter shape of the quartz tube.

2. The heating device (100) for a PECVD apparatus according to claim 1, characterized in that, At least one end of the quartz tube (34) extends out of the vacuum chamber (10), and at least one end of the radiation source (32) extends out of the quartz tube (34).

3. The heating device (100) for a PECVD device according to claim 1 or 2, characterized in that, The heating device (100) includes a plurality of heating assemblies (30), and the plurality of heating assemblies (30) are spaced apart along a second direction.

4. The heating device (100) for a PECVD apparatus according to claim 1 or 2, characterized in that, The loading assembly (20) includes a carrier plate (22) and transmission rollers (24), The transmission roller (24) can drive the carrier plate (22) and the piece to be heated (200) loaded on the carrier plate (22) to reciprocate.

5. The heating device (100) for a PECVD apparatus according to claim 1 or 2, characterized in that, The heating device (100) further includes a sealing and fixing assembly (50). The sealing and fixing assembly (50) is arranged on the vacuum chamber (10) and is used for fixing the heating assembly (30) and sealing the vacuum chamber (10).

6. A vacuum coating device, characterized in that, The vacuum coating equipment includes: The heating device (100) for a PECVD device according to any one of claims 1 to 5; An in-chamber valve (300) communicated with the vacuum chamber (10) of the heating device (100); An out-chamber valve (400) communicated with the vacuum chamber (10) of the heating device (100); A detection device (500) for detecting the position of the piece to be heated (200); A control system (600) connected to the heating device (100), the in-chamber valve (300), the out-chamber valve (400) and the detection device (500). The control system (600) can control the opening and closing of the in-chamber valve (300) and the out-chamber valve (400).

7. A heating method, characterized in that, The heating method uses the vacuum coating equipment according to claim 6 for heating. The heating method includes the following steps: Step S10: Transmit the piece to be heated into the vacuum chamber; Step S20: While the piece to be heated reciprocates in its transmission direction, dynamically heat the piece to be heated; Step S30: Transmit the piece to be heated out of the vacuum chamber.

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