Mask plate and manufacturing method thereof, and organic light-emitting device

Abstract

Disclosed are a mask plate (100) and a method for making the same, and a method for preparing an organic light-emitting device (200). The mask plate (100) comprises a substrate (1) and a first opening (2) and a second opening (3) formed on the substrate (1); the first opening (2) comprises a first side (4) and a second side (5) extending in a straight line; an extension line of the first side (4) and an extension line of the second side (5) intersect at a first vertex (6) to form a first vertex angle of the first opening (2); the second opening (3) is located at the first vertex angle and protrudes outward; an edge of the second opening (3) intersects with the first side (4) and the second side (5) to communicate with the first opening (2); the first opening (2) and the second opening (3) are used for vapor deposition of a display area of ​​the organic light-emitting device (200); and the second opening (3) is used for vapor deposition compensation of the vertex angle of the display area.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a mask plate and a method for manufacturing the mask plate, and an organic light-emitting device (OLED). Background Art

[0002] Organic light-emitting display devices have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, bright colors, and lightness, and therefore have become an important display technology. Organic light-emitting display devices can be prepared by methods such as inkjet printing and evaporation. The evaporation method has the advantages of simple operation, easy control of film thickness, and easy implementation of doping. In the process of preparing organic light-emitting display devices using thin film evaporation, a mask is required in order to evaporate specific materials at specific locations such as pixel areas. The mask usually includes a mask pattern, which is used as a mask during evaporation to form a corresponding thin film pattern on the substrate to be evaporated. Summary of the invention

[0003] At least one embodiment of the present disclosure provides a method for manufacturing a mask template, the method comprising: providing a substrate; using an etching method to form a first opening portion and a second opening portion in the substrate, the first opening portion comprising a first side edge and a second side edge extending in a straight line, an extension line of the first side edge and an extension line of the second side edge intersecting at a first vertex to form a first vertex angle of the first opening portion, the second opening portion being located at the first vertex angle and protruding outward, an edge of the second opening portion intersecting with the first side edge and the second side edge, thereby communicating with the first opening portion; the first opening portion and the second opening portion are used for vapor deposition of a display area of ​​an organic light-emitting device, and the second opening portion is used for vapor deposition compensation of the vertex angle of the display area.

[0004] In some examples, the etching method is wet etching, and the second opening is further configured to perform etching compensation on the first vertex.

[0005] In some examples, the maximum vertical distance from the edge of the second opening to the extension line of the first side edge is approximately 40 to 60 micrometers.

[0006] In some examples, a maximum vertical distance from an edge of the second opening to an extension line of the second side edge is approximately equal to 40 to 60 micrometers.

[0007] In some examples, an extension line of the first side and an extension line of the second side intersect substantially perpendicularly.

[0008] In some examples, the edge of the second opening intersects with the first side at a first intersection and intersects with the second side at a second intersection, and the distances from the first intersection and the second intersection to the first vertex are substantially equal.

[0009] In some examples, the etching method includes exposing using a photolithography mask.

[0010] The photolithography mask includes a first pattern for forming the first opening and a second pattern for forming the second opening.

[0011] In some examples, the second pattern is in the shape of a circle, a regular polygon, or a portion of an irregular polygon.

[0012] In some examples, the circle is centered at the first vertex.

[0013] At least one embodiment of the present disclosure provides a mask plate, comprising: a substrate and a first opening portion and a second opening portion formed on the substrate, the first opening portion comprising a first side edge and a second side edge extending in a straight line, an extension line of the first side edge and an extension line of the second side edge intersecting at a first vertex to form a first vertex angle of the first opening portion, the second opening portion being located at the first vertex angle and protruding outward, an edge of the second opening portion intersecting with the first side edge and the second side edge, thereby communicating with the first opening portion, the first opening portion and the second opening portion being used for vapor deposition of a display area of ​​an organic light-emitting device, and the second opening portion being used for vapor deposition compensation of the vertex angle of the display area.

[0014] In some examples, the maximum vertical distance from the edge of the second opening to the first side edge is approximately 40 to 60 micrometers.

[0015] The maximum vertical distance from the edge of the second opening to the second side edge is approximately 40 to 60 micrometers.

[0016] In some examples, an extension line of the first side and an extension line of the second side intersect substantially perpendicularly.

[0017] In some examples, the edge of the second opening intersects with the first side at a first intersection and intersects with the second side at a second intersection, and the distances from the first intersection and the second intersection to the first vertex are substantially equal.

[0018] At least one embodiment of the present disclosure provides an organic light-emitting device, comprising: a display area and a peripheral area, wherein the display area includes a functional layer, the functional layer has a shape corresponding to the first opening portion and the second opening portion of the above-mentioned mask, and has a vertex angle boundary of the second opening portion.

[0019] In some examples, the functional layer is at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer, or a common electrode layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0021] Figure 1 A schematic diagram showing the problem of rounded corners in the photolithography process;

[0022] FIG. 2A to FIG. 2D Schematic diagrams showing the actual light emitting process of each pixel (white light, red light, green light, blue light) when the top angle margin is insufficient;

[0023] Figure 3 A front view of a mask according to at least one embodiment of the present disclosure is shown;

[0024] Figure 4 Shows Figure 3 A partial enlarged view of the mask shown;

[0025] Figure 5 A partial enlarged view of a photolithography mask according to at least one embodiment of the present disclosure is shown;

[0026] Figure 6 A partial enlarged view of a photolithography mask according to another embodiment of the present disclosure is shown;

[0027] Figure 7 A partial enlarged view of a photolithography mask according to another embodiment of the present disclosure is shown;

[0028] Figure 8 A partial enlarged view of a photolithography mask according to another embodiment of the present disclosure is shown;

[0029] Figures 9 to 12 Shown according to Figure 3 A method for making a mask template of a cross section taken along line BB;

[0030] Fig.13 A schematic diagram of a method for preparing an organic light-emitting device according to at least one embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0032] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0033] The evaporation method is one of the commonly used methods for thin film deposition. During the thin film evaporation process, a mask is used to form a thin film layer with a certain pattern. Organic light-emitting diode display panels are becoming more and more popular in the market due to their advantages such as autonomous luminescence, low power consumption, high display brightness, wide viewing angle, and fast response speed. The organic light-emitting layer and functional layer in the organic light-emitting diode display panel can usually be formed by the evaporation method.

[0034] Due to the influence of the alignment accuracy of the mask and the evaporation shadow (EV shadow), a certain margin needs to be reserved when designing the mask. The design of the margin satisfies the following relationship: margin = alignment accuracy + evaporation shadow.

[0035] When the shape of the display area of ​​the display panel to be prepared is, for example, a rectangle, the opening portion of the corresponding mask is also a rectangle. The mask can be made using a metal plate by a photolithography process, such as wet etching. However, wet etching will form rounded corners at the top corners of the rectangular area due to its isotropic properties, so that the margins at the top corners are significantly reduced compared to the straight line segments of the rectangular area. Generally speaking, when the thickness of the mask is 100 microns, the fillet radius R caused by etching is about 150 microns, when the thickness of the mask is 150 microns, the fillet radius R caused by etching is about 200 microns, and when the thickness of the mask is 200 microns, the fillet radius R caused by etching is about 250 microns.

[0036] The effect of etching fillet on margin is as follows: Figure 1 As shown, when the straight area margin is 120 microns, when the etching fillet R = 200 microns, the available margin of the top corner is 86.9 microns. Under the same mask alignment accuracy and evaporation shadow, according to the above formula, assuming that the sum of the mask alignment accuracy and the evaporation shadow is equal to the straight margin (i.e., 120 microns), the top corner margin is only 86.9 microns, which is significantly smaller than the straight margin. Under the same process conditions, the top corner pixels will not have a guaranteed thickness of the functional layer (such as the common cathode layer, etc.) formed by evaporation due to insufficient margins, so that the pixels in the non-edge part of the display area will appear dark when displaying the same grayscale data signal.

[0037] FIG. 2A to FIG. 2D The schematic diagrams respectively show the actual light-emitting process of each pixel (white light, red light, green light, blue light) when the top corner margin is insufficient. The dotted frame line represents the top corner pixel, also called dark pixel, and the remaining light-emitting pixels are pixels formed under normal margins. FIG. 2A to FIG. 2D In the luminescence diagram of the four colors of luminous pixels, the luminous intensity of the corner pixels (dark pixels) formed due to insufficient margins is less than the luminous intensity of normal pixels, for example, less than approximately 30%-50% of the luminous intensity of normal pixels. Therefore, it is necessary to increase the margin of the corner pixels to form a uniform luminous area.

[0038] At least one embodiment of the present disclosure provides a method for manufacturing a mask plate and a mask plate obtained thereby. The method comprises: providing a substrate; using an etching method to form a first opening portion and a second opening portion in the substrate, wherein the first opening portion comprises a first side edge and a second side edge extending in a straight line, the extension line of the first side edge and the extension line of the second side edge intersect at a first vertex to form a first vertex angle of the first opening portion, the second opening portion is located at the first vertex angle and protrudes outward, the edge of the second opening portion intersects with the first side edge and the second side edge, and thus communicates with the first opening portion; the first opening portion and the second opening portion are used for vapor deposition of the display area of ​​the organic light-emitting device, and the second opening portion is used for vapor deposition compensation of the vertex angle of the display area.

[0039] The mask obtained by the manufacturing method of the above embodiment can increase the pixel margin at the top corner when used to prepare an organic light-emitting device, improve the uniformity of evaporation in the display area, and thus improve the display quality of the display area.

[0040] Some other embodiments of the present disclosure further provide a photolithography mask for executing the above-mentioned manufacturing method and forming the above-mentioned mask, wherein the photolithography mask comprises: a first pattern for forming a first opening portion and a second pattern for forming a second opening portion.

[0041] Various embodiments of the present disclosure are described below in conjunction with specific drawings.

[0042] At least one embodiment of the present disclosure provides a mask plate 100, such as Figure 3 and Figure 4 As shown, the mask 100 includes a substrate 1 and a first opening 2 and a second opening 3 formed on the substrate.

[0043] For example, the mask plate 100 may include a plurality of first openings 2 and a second opening 3 for each first opening 2. For example, each first opening 2 corresponds to a display area of ​​a display panel to be prepared, so the mask plate 100 can be used to prepare a plurality of display panels at the same time, and these display panels are, for example, display panels for portable electronic devices (such as mobile phones, smart watches, etc.). The shape of the first opening 2 is rectangular in this embodiment. The first opening 2 can also be designed as other regular or irregular shapes according to actual needs, such as an irregular shape with a protrusion in the middle of the top.

[0044] During use, the mask plate 100 can be further combined with a frame or the like to obtain a vapor deposition assembly. For example, the mask plate 100 can be welded to the frame through an edge portion (such as a welding portion of the edge portion), and the frame provides support.

[0045] In order to more clearly show the top angle of the first opening 2 and the shape of the second opening 3, Figure 4 for Figure 3 A partial enlarged view of part A in the middle. The first opening portion 2 includes a first side 4 and a second side 5 extending in a straight line, and the extension line of the first side 4 and the extension line of the second side 5 intersect perpendicularly at the first vertex 6 to form a first vertex angle of the first opening portion 2. It should be noted that the first vertex 6 can be located on the actual edge, or it can also be located in the second opening portion, in which case it is a virtual vertex angle. In the present embodiment, the angle of the first vertex angle is 90 degrees. The first vertex angle can also be designed to other angles according to the shape of the first opening portion 2, such as an acute angle or an obtuse angle, and the angle of the first vertex angle depends on the shape of the first opening portion 2.

[0046] Similarly, the first opening 2 may also include a second vertex angle, a third vertex angle and a fourth vertex angle which are the same as the first vertex angle at other vertices. For the sake of simplicity, the first vertex angle is mainly described here, and the structures of the other vertex angles can be derived by analogy.

[0047] like Figure 4 As shown, the second opening 3 is located at the first vertex and protrudes outward, and the edges of the second opening 3 intersect with the first side 4 respectively, thereby communicating with the first opening 2. The first opening 2 and the second opening 3 are used for vapor deposition of the display area of ​​the organic light-emitting device, and the second opening 3 is used for vapor deposition compensation of the vertex of the display area.

[0048] For example, the edge of the second opening portion 3 intersects with the first side 4 at the first intersection 41, and the second side 5 intersects with the second intersection 51, so that the second opening portion 3 is connected with the first opening portion 2. In this example, the distance between the first intersection 41 and the first vertex 6 is approximately equal to the distance between the second intersection 51 and the first vertex 6, that is, the two parts of the second opening portion 3 are approximately symmetrical along the bisector of the first vertex 6. Considering the error of the actual processing technology, the present disclosure is not limited to this. The distance between the first intersection 41 and the first vertex 6 may not be equal to the distance between the second intersection 51 and the first vertex 6.

[0049] For example, the extension line of the first side 4 and the extension line of the second side 5 intersect approximately perpendicularly. Figure 4 shown.

[0050] In this embodiment, the second opening portion 3 extends outward relative to the first opening portion 2 in a direction perpendicular to the first side edge 4 and the second side edge 5. In this embodiment, the edge of the second opening portion 3 is a combination of an arc portion and a straight portion, and the arc portion passes through the first vertex 6. Considering the error of the actual processing technology, the present disclosure is not limited to this, and the arc portion may not pass through the first vertex 6, and it is only necessary to ensure that the radial distance between the first vertex 6 and the arc portion is within 5 microns.

[0051] like Figure 4 As shown, the maximum vertical distance from the edge of the second opening 3 to the first side 4 is defined as h1, and the maximum vertical distance from the edge of the second opening 3 to the second side 5 is defined as h2, and the range of h1 and h2 is 40 microns to 60 microns. This configuration is mainly considered that in order to compensate for the etched rounded corners of the mask plate 100, the mask plate 100 needs to be over-etched during production to compensate for the rounded corners and increase the margins at the same time, but the over-etching range cannot be too large, otherwise a second opening 3 with a larger area will be generated, thereby affecting the area and thickness of the subsequent vapor deposition functional layer. Therefore, the edge of the second opening 3 needs to be kept within a reasonable range, so that the over-etched part only affects the area and thickness of the functional layer in a small range, to prevent a significant impact on the display panel. In one example, the example dimensions of the mask plate 100 produced are: h1 = 51 microns, h2 = 42 microns.

[0052] The following will be combined Figures 5 to 8 Various exemplary shapes of a photolithography mask used to manufacture the mask 100 by an etching method are introduced.

[0053] To simplify the description, the design of the second pattern 8 of the photolithography mask for forming the second opening is introduced below. The shape and size of the first pattern 7 of the photolithography mask are the same as the shape and size of the first opening 2 of the mask 100, and only a part of the first pattern 7 is shown here.

[0054] The shape of the second pattern 8 can be a circle, a regular polygon or a part of an irregular polygon. Figure 5 As shown, the second pattern 8 is in the shape of a 3 / 4 circle, with a radius R of 50 microns, and the center is the first vertex 6. The present disclosure is not limited to this, and the second pattern 8 may also be in the shape of a sector, or the radius of the second pattern 8 may be in the range of 40-60 microns, and may be adjusted and modified accordingly according to actual process requirements, for example, fluctuating about 10-20% within the above range.

[0055] For example, Figure 6 As shown, the second pattern 8 is in the shape of a 3 / 4 square, the side length of the square is 50 microns, and the center of the square is the first vertex 6. The present disclosure is not limited thereto, and the side length of the second pattern 8 can range from 40 to 60 microns, and can be adjusted and modified accordingly according to actual process requirements.

[0056] For example, Figure 7As shown, the shape of the second pattern 8 is an irregular polygon, including two adjacent sides parallel to the first side 4 and the second side 5, and two opposite sides intersecting the first side 4 and the second side 5. The opposite two sides are parallel to each other and extend at a 45-degree angle to the first side 4 and the second side 5, respectively. The length of the adjacent two sides is 25 microns, and the horizontal (or vertical) distance between the opposite two sides is 25 microns. The present disclosure is not limited to this, and the shape of the second pattern 8 can be adjusted and modified accordingly according to actual process requirements, for example, based on Figure 5-Figure 7 The examples shown are combined, and a possible variation is, for example, Figure 8 , the shape of the second pattern 8 is Figure 7 The combination of two opposite sides and a semicircle with a radius of 25 μm.

[0057] Several examples of the shapes of the photolithography mask used to make the mask 100 by the etching method are shown above, and the above shapes are intended to form the second opening 3 to compensate for the rounded corners produced by the top corner etching. Therefore, based on the inventive concept of the embodiment of the present disclosure, those skilled in the art can easily think of other shapes of the second pattern 8 extending outwardly from the top corners of the rectangle.

[0058] The following will be combined Figures 9 to 12 A method for manufacturing a mask plate 100 according to at least one embodiment of the present disclosure is introduced.

[0059] First, if Fig. 9 As shown, a substrate 1 is provided. Examples of the material of the substrate 1 include Invar alloy, nickel-iron alloy or other suitable materials. The thickness of the substrate 1 may range from 80 microns to 200 microns, which is not limited in this embodiment.

[0060] like Fig.10 As shown, for example, a photoresist layer can be deposited on the substrate 1, and the photoresist layer can be patterned by photolithography including an exposure process and a development process using the above-mentioned photolithography mask to form a photoresist pattern 9 on the substrate 1. The photoresist pattern 9 exposes the first pattern 7 and the second pattern 8 to be formed on the substrate 1.

[0061] like Fig.11 As shown, the first pattern 7 and the second pattern 8 of the substrate 1 are etched using the above-mentioned photoresist pattern 9 as an etching mask, and an opening is formed on the substrate 1 by controlling factors such as etching time and etching rate, and the opening includes the first opening 2 and the second opening 3 as described above. The opening can be multiple, for example, four. The first opening 2 and the second opening 3 are used for vapor deposition of the display area of ​​the organic light-emitting device, and the second opening 3 is used for compensation of the top angle vapor deposition of the display area.

[0062] For example, the etching process is wet etching, and the second opening portion 3 can also be configured to perform etching compensation on the first top corner of the first opening portion 2 .

[0063] Finally, the photoresist pattern 9 is removed by a stripping process, thereby forming a Fig.12 The mask plate 100 is shown.

[0064] The following will be combined Fig.13 An organic light-emitting device 200 and a method for manufacturing the same according to at least one embodiment of the present disclosure are introduced.

[0065] The organic light-emitting device 200 includes a display area and a peripheral area. The display area includes a functional layer. The functional layer has a shape corresponding to the first opening 2 and the second opening 3 of the mask plate 100 and has a vertex boundary of the second opening 3 .

[0066] For example, the organic light emitting device 200 is an organic light emitting diode display device, which includes an active area, the active area includes a plurality of sub-pixels arranged in an array, each sub-pixel includes an organic light emitting diode and a driving circuit. The organic light emitting diode has a cathode, a light emitting layer, an anode, etc., and may also include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer, etc. as needed.

[0067] For example, in one embodiment of the present disclosure, a functional layer of an organic light-emitting device can be formed using a mask plate 100. The functional layer is at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer, or a common electrode layer, such as a common electrode layer (common cathode layer). This embodiment introduces a method for preparing an organic light-emitting device 200 using the mask plate 100 as an example.

[0068] like Fig.13 As shown, the mask plate 100 is arranged on the evaporation surface of the organic light-emitting device 200 to be evaporated, and the mask plate 100 includes a shielding portion 101 and an opening portion 102. The opening portion 102 is an opening structure. For example, the shape of the opening portion 102 can be defined by the first opening portion 2 and the second opening portion 3 of the mask plate 100. For specific implementations, please refer to the contents described in the above embodiments, which will not be described in detail in this embodiment. The evaporation source 300 is arranged on the side facing the evaporation surface of the organic light-emitting device 200.

[0069] For example, Fig.13As shown, when the evaporation source 300 evaporates the material on the evaporation surface of the organic light-emitting device 200, the evaporation material is evaporated to the area of ​​the organic light-emitting device 200 corresponding to the opening 102 through the mask opening area of ​​the mask plate 100, and no evaporation material is formed in the area of ​​the organic light-emitting device 200 blocked by the blocking portion 101 of the mask plate 100. In this embodiment, by designing the second opening 3 on the mask plate 100, the original vertex margin is improved, and a uniform evaporation thickness can be formed, thereby forming a uniform pixel light-emitting area.

[0070] For other technical effects of the preparation method provided in this embodiment, reference may be made to the technical effects of the mask described in the above embodiments, which will not be described in detail here.

[0071] The above description is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. The protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A method for making a mask, comprising: providing a substrate; Using an etching method, a first opening and a second opening are formed in the substrate, The first opening portion includes a first side and a second side extending in a straight line, and an extension line of the first side and an extension line of the second side intersect at a first vertex to form a first vertex angle of the first opening portion. The second opening is located at the first vertex and protrudes outward, and the edge of the second opening intersects with the first side edge and the second side edge, thereby communicating with the first opening; The first opening and the second opening are used for vapor deposition on a display area of ​​the organic light-emitting device, and the second opening is used for compensation for the top angle vapor deposition of the display area; The edge of the second opening portion is a combination of an arc portion and a straight portion, and the arc portion passes through the first vertex.

2. The method of claim 1, wherein: The etching method is wet etching, and the second opening is further configured to perform etching compensation on the first vertex.

3. The method according to claim 1 or 2, wherein: The maximum vertical distance from the edge of the second opening to the extension line of the first side edge is approximately equal to 40 to 60 micrometers.

4. The method according to claim 1 or 2, wherein: The maximum vertical distance from the edge of the second opening to the extension line of the second side edge is approximately equal to 40 to 60 micrometers.

5. The method according to claim 1 or 2, wherein: An extension line of the first side and an extension line of the second side intersect each other substantially perpendicularly.

6. The method according to claim 1 or 2, wherein: The edge of the second opening portion intersects with the first side at a first intersection and intersects with the second side at a second intersection, and the distances from the first intersection and the second intersection to the first vertex are substantially equal.

7. The method of claim 1, wherein: The etching method comprises exposing using a photolithography mask, The photolithography mask includes a first pattern for forming the first opening and a second pattern for forming the second opening.

8. The method of claim 7, wherein: The second pattern is in the shape of a circle, a regular polygon or a part of an irregular polygon.

9. A mask, comprising: substrate; and a first opening and a second opening formed on the substrate, The first opening portion includes a first side and a second side extending in a straight line, and an extension line of the first side and an extension line of the second side intersect at a first vertex to form a first vertex angle of the first opening portion. The second opening is located at the first vertex and protrudes outward, and the edge of the second opening intersects with the first side and the second side, thereby communicating with the first opening. The first opening and the second opening are used for vapor deposition on a display area of ​​the organic light-emitting device, and the second opening is used for compensation for the top angle vapor deposition of the display area; The edge of the second opening portion is a combination of an arc portion and a straight portion, and the arc portion passes through the first vertex.

10. The mask according to claim 9, wherein: The maximum vertical distance from the edge of the second opening to the first side edge is approximately 40 to 60 microns. The maximum vertical distance from the edge of the second opening to the second side edge is approximately 40 to 60 micrometers.

11. The mask according to claim 9 or 10, wherein: An extension line of the first side and an extension line of the second side intersect each other substantially perpendicularly.

12. The mask according to claim 9 or 10, wherein: The edge of the second opening portion intersects with the first side at a first intersection and intersects with the second side at a second intersection, and the distances from the first intersection and the second intersection to the first vertex are substantially equal.

13. An organic light-emitting device, comprising: A display area and a peripheral area, wherein the display area includes a functional layer, the functional layer has a shape corresponding to the first opening portion and the second opening portion of the mask plate according to any one of claims 9 to 12, and has a vertex angle boundary of the second opening portion.

14. The organic light emitting device according to claim 13, wherein: The functional layer is at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer or a common electrode layer.

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