Performance Testing Methods

Abstract

The present invention relates to the field of micro-nano device testing technology, and discloses a performance testing method, including testing a sample to be tested under different temperature environments to obtain a resonant frequency temperature coefficient of the sample to be tested; fixing the sample to be tested on an infrared imaging device, and heating the infrared imaging device to a preset temperature; applying a preset input power to the sample to be tested, using the infrared imaging device to perform an imaging test on the sample to be tested, and obtaining surface temperature field information of the sample to be tested under the preset input power condition; while keeping the preset input power applied to the sample to be tested unchanged, testing and obtaining the characteristic frequency of the sample to be tested; and calculating and obtaining the equivalent temperature rise of the sample to be tested under the preset input power condition according to the resonant frequency temperature coefficient and the characteristic frequency. By obtaining the surface temperature field information and the equivalent temperature rise value of the sample to be tested under the preset power load, reliable support is provided for the design, reliability evaluation and analysis, failure mechanism modeling, and other work of related products.

Description

Technical Field

[0001] The invention relates to the technical field of micro-nano device testing, and in particular to a performance testing method. Background Art

[0002] For micro-nano devices used in the field of high-power loads, such as semiconductor power devices and BAW filters, the heat generated by the devices themselves will seriously affect the performance and reliability of the devices under high-power loads. Therefore, clarifying the self-heating effect of micro-nano devices under high-power loads and the temperature field (including key characteristic parameters such as maximum temperature and average temperature), the degradation characteristics of key performance parameters of micro-nano devices under temperature fields, etc., are important for the structural design of micro-nano devices, the establishment of heating models, and the reliability evaluation or failure mechanism analysis of devices. Summary of the invention

[0003] Based on this, it is necessary to provide a performance testing method for determining the self-heating effect, temperature field and degradation characteristics of key performance parameters generated by micro-nano devices under high power load.

[0004] A performance testing method comprises testing a sample to be tested under different temperature environments to obtain a resonant frequency temperature coefficient of the sample to be tested; fixing the sample to be tested on an infrared imaging device; applying a preset input power to the sample to be tested, using the infrared imaging device to perform an imaging test on the sample to be tested, and obtaining surface temperature field information of the sample to be tested under the preset input power condition; testing and obtaining a characteristic frequency of the sample to be tested while keeping the preset input power applied to the sample to be tested unchanged; and calculating and obtaining an equivalent temperature rise of the sample to be tested under the preset input power condition based on the resonant frequency temperature coefficient and the characteristic frequency.

[0005] The above performance test method tests the sample to be tested under different temperature environments to obtain the resonant frequency temperature coefficient of the sample to be tested. A preset input power is applied to the sample to be tested on an infrared imaging device heated to a preset temperature, and the sample to be tested is imaged and tested using the infrared imaging device to obtain the surface temperature field information of the sample to be tested under the preset input power condition. At the same time, the characteristic frequency of the sample to be tested is tested and obtained under the condition of constant input power. According to the resonant frequency temperature coefficient and the characteristic frequency, the equivalent temperature rise of the sample to be tested under the preset input power condition is obtained. The performance test method provided by the present invention can not only obtain the equivalent temperature rise value of the self-heating effect under the preset power load, but also further obtain the temperature field information generated by the specific power load on the micro-nano device under the equivalent temperature rise value. By obtaining the temperature distribution and equivalent temperature rise value of different areas of the sample to be tested after the self-heating effect occurs under the preset power load, a solid data support is provided for the design, reliability evaluation and analysis, failure mechanism modeling and other work of related products, and the data that is more in line with the actual heating situation of the sample to be tested is used to reduce the error.

[0006] In one embodiment, the sample to be tested is tested under different temperature environments to obtain the resonant frequency temperature coefficient of the sample to be tested, including testing and obtaining the first characteristic frequency of the sample to be tested when the ambient temperature is a first temperature; testing and obtaining the second characteristic frequency of the sample to be tested when the ambient temperature is a second temperature; wherein the second temperature is greater than the first temperature; calculating the frequency drift after the ambient temperature rises from the first temperature to the second temperature based on the first characteristic frequency and the second characteristic frequency; and calculating the resonant frequency temperature coefficient of the sample to be tested based on the frequency drift and the first characteristic frequency.

[0007] In one embodiment, the frequency drift is calculated as follows:

[0008] df(T)=f(T)-f(T0);

[0009] Wherein, df(T) is the frequency drift, f(T) is the second characteristic frequency, and f(T0) is the first characteristic frequency.

[0010] In one embodiment, the calculation formula of the resonant frequency temperature coefficient is:

[0011]

[0012] Wherein, TCF is the temperature coefficient of the resonant frequency, f(T0) is the first characteristic frequency, df(T) is the frequency drift, and dT is the temperature difference between the second temperature and the first temperature.

[0013] In one embodiment, after calculating the resonant frequency temperature coefficient of the sample to be tested based on the frequency drift and the first characteristic frequency, the performance testing method further includes adjusting the ambient temperature to a plurality of different temperature values, and testing and obtaining the characteristic frequencies of the sample to be tested at different temperature values ​​respectively; calculating the resonant frequency temperature coefficients of the sample to be tested at different temperatures respectively according to the characteristic frequencies at different temperature values; and averaging all the obtained resonant frequency temperature coefficients.

[0014] In one embodiment, the first temperature is room temperature.

[0015] In one of the embodiments, when the sample to be tested is fixed on the infrared imaging device, the sample to be tested is fixed at a fixed position on the heating table of the infrared imaging device by using a thermal conductive adhesive.

[0016] In one embodiment, after the sample to be tested is fixed on the infrared imaging device, the performance testing method further includes heating the infrared imaging device to a preset temperature to calibrate the thermal emissivity of the surface material of the sample to be tested.

[0017] In one of the embodiments, after applying a preset input power to the sample to be tested, using the infrared imaging device to perform an imaging test on the sample to be tested, and obtaining the surface temperature field information of the sample to be tested under the preset input power condition, the performance testing method further includes obtaining key feature information of the sample to be tested under the preset input power condition based on the surface temperature field information.

[0018] In one embodiment, the key characteristic information includes the temperature value of each point on the surface of the sample to be tested, the maximum temperature on the surface of the sample to be tested, the average temperature on the surface of the sample to be tested, and the temperature gradient information on the surface of the sample to be tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the implementation methods of this specification or the technical solutions in the prior art, the drawings required for use in the implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some implementation methods recorded in this specification. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 A method flow chart of a performance testing method according to one embodiment of the present invention;

[0021] Figure 2 A flow chart of a method for obtaining a resonant frequency temperature coefficient according to one embodiment of the present invention;

[0022] Figure 3 FIG. 4 is a flow chart of a method for reducing the temperature coefficient error of the oscillation frequency according to one embodiment of the present invention. DETAILED DESCRIPTION

[0023] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to understand the disclosure of the present invention more thoroughly and comprehensively.

[0024] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may also be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right", "upper", "lower", "front", "rear", "circumferential" and similar expressions used herein are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0026] Micro-nano devices used in the field of high-power loads, such as semiconductor power devices and BAW filters, will have serious impacts on the performance and reliability of the devices due to the heat generated by the devices themselves under high-power loads. The self-heating effect will cause the temperature of the device to rise, and the properties of the laminated materials in the micro-nano devices (such as elastic coefficient, density, thickness, etc.) have temperature correlation, among which the elastic coefficient with negative temperature correlation is most affected by the temperature rise. Therefore, when the temperature of the device rises significantly due to self-heating, the elastic coefficient will decrease, thereby reducing the longitudinal wave speed, and ultimately leading to the resonant frequency of the micro-nano device to deviate downward, and the passband of the micro-nano device to drift and the insertion loss in the band to increase. It can be seen that the self-heating effect is the main factor limiting the power capacity of micro-nano devices.

[0027] At present, when determining the temperature rise of micro-nano devices due to self-heating effect under different power loads, it is assumed that the temperature of the heating area of ​​the sample to be tested is the same and the temperature distribution in different areas can be ignored. However, in fact, there is a large temperature gradient in the temperature of the heating area of ​​the device. When using the existing test method, that is, only using an equivalent temperature value to characterize the self-heating effect of the product under different power loads, it will cause large errors in product design, reliability evaluation and analysis, failure mechanism modeling, etc.

[0028] The present invention provides a performance testing method based on TCF and microscopic infrared imaging technologies, which uses the characteristic frequency of a micro-nano device as a characterization parameter to obtain surface temperature field information of different parts of the micro-nano structure, and simultaneously obtains the equivalent temperature value of the characteristic frequency drift caused by the combination of the above key characteristic parameters.

[0029] Figure 1 1 is a method flow chart of a performance testing method according to one embodiment of the present invention. In one embodiment, the performance testing method includes the following steps S100 to S500.

[0030] S100: Testing the sample to be tested under different temperature environments to obtain the resonant frequency temperature coefficient of the sample to be tested.

[0031] S200: Fix the sample to be tested on the infrared imaging device.

[0032] S300: applying a preset input power to the sample to be tested, performing an imaging test on the sample to be tested using an infrared imaging device, and obtaining surface temperature field information of the sample to be tested under the preset input power condition.

[0033] S400: While keeping the preset input power applied to the sample to be tested unchanged, test and obtain the characteristic frequency of the sample to be tested.

[0034] S500: Calculate and obtain the equivalent temperature rise of the sample to be tested under a preset input power condition according to the resonant frequency temperature coefficient and the characteristic frequency.

[0035] First, place the sample to be tested in an environment where the temperature is adjustable and controllable. In this embodiment, the sample to be tested is a micro-nano device, and the micro-nano device is a BAW filter; the temperature-adjustable and controllable environment is a high and low temperature test chamber. Place the sample to be tested in the high and low temperature test chamber. Use the high and low temperature test chamber to adjust the ambient temperature of the environment where the sample to be tested is located, test the sample to be tested at different ambient temperatures, and obtain the resonant frequency temperature coefficient of the sample to be tested according to the test.

[0036] After obtaining the resonant frequency temperature coefficient of the sample to be tested, the sample to be tested is fixed on the infrared imaging device. A preset input power P is applied to the sample to be tested.n When the temperature distribution on the surface of the sample to be tested is stable, an infrared imaging device is used to perform an imaging test on the sample to be tested to obtain the surface temperature field information of the sample to be tested under the preset input power conditions.

[0037] Then, keep the position of the sample to be tested unchanged, and keep the input power P of the sample to be tested constant. n Under the same conditions, test the characteristic frequency f of the sample to be tested (Pn) According to the resonant frequency temperature coefficient and characteristic frequency f of the sample to be tested (Pn) Calculate the load at the preset input power P n Equivalent temperature rise (or device temperature) under certain conditions.

[0038] Based on the above performance test method, not only can the equivalent temperature rise value of the self-heating effect under the preset power load be obtained, but also the temperature field information generated by the specific power load on the micro-nano device under the equivalent temperature rise value can be further obtained. By obtaining the temperature distribution and equivalent temperature rise value of different areas of the sample to be tested after the self-heating effect occurs under the preset power load, solid data support is provided for the design, reliability evaluation and analysis, failure mechanism modeling and other work of related products, and data that is more in line with the actual heating conditions of the sample to be tested is used to reduce errors.

[0039] Figure 2 This is a flow chart of a method for obtaining a resonant frequency temperature coefficient according to one embodiment of the present invention. In one embodiment, a sample to be tested is tested under different temperature environments to obtain the resonant frequency temperature coefficient of the sample to be tested, including the following steps S110 to S140.

[0040] S110: When the ambient temperature is a first temperature, test and obtain a first characteristic frequency of the sample to be tested.

[0041] S120: When the ambient temperature is a second temperature, test and obtain a second characteristic frequency of the sample to be tested; wherein the second temperature is greater than the first temperature.

[0042] S130: Calculate the frequency drift after the ambient temperature rises from the first temperature to the second temperature according to the first characteristic frequency and the second characteristic frequency.

[0043] S140: Calculating the resonant frequency temperature coefficient of the sample to be tested according to the frequency drift and the first characteristic frequency.

[0044] After placing the sample to be tested in the high and low temperature test chamber, first set the ambient temperature in the high and low temperature test chamber to the first temperature T0. After the temperature in the high and low temperature test chamber is stable, test the first characteristic frequency f(T0) of the sample to be tested at the first temperature T0. Then, raise the ambient temperature in the high and low temperature test chamber to the second temperature T n , and Tn >T0. After the temperature in the high and low temperature test chamber stabilizes, test at the second temperature T n The second characteristic frequency f(T n ).

[0045] According to the first characteristic frequency f(T0) and the second characteristic frequency f(T n ), calculate when the ambient temperature rises from the first temperature T0 to the second temperature T n After that, the frequency drift df(T n ). According to the frequency drift df(T n ) and the first characteristic frequency f(T0), calculate the resonant frequency temperature coefficient TCF of the sample to be tested. The resonant frequency temperature coefficient TCF (Temperature Coefficient of Resonance Frequency) is a parameter used to describe the thermal stability of the resonator. The resonant frequency temperature coefficient can be used to express the degree of resonant frequency drift of microwave dielectric ceramic materials when the temperature changes. Similarly, when the resonant frequency drift occurs during the test, the equivalent temperature rise on the sample to be tested can be calculated based on the frequency drift.

[0046] In one embodiment, the first temperature is room temperature. After placing the sample to be tested in the high and low temperature test chamber, the ambient temperature in the high and low temperature test chamber is first set to room temperature to simulate the ambient temperature of the sample to be tested during normal operation. On the basis of room temperature, the ambient temperature is increased to simulate the temperature rise of the sample to be tested during actual operation.

[0047] In one embodiment, the frequency drift is calculated as:

[0048] df(T n )=f(T n )-f(T0);

[0049] Among them, df(T n ) is the frequency drift, f(T n ) is the second characteristic frequency, and f(T0) is the first characteristic frequency.

[0050] The first characteristic frequency f(T0) and the second characteristic frequency f(T n ) is substituted into the above frequency drift calculation formula to calculate the ambient temperature from the first temperature T0 to the second temperature T n After that, the frequency drift df(T n ).

[0051] In one embodiment, the calculation formula of the resonant frequency temperature coefficient is:

[0052]

[0053] Where TCF is the temperature coefficient of resonant frequency, f(T0) is the first characteristic frequency, df(T n ) is the frequency drift, and dT is the temperature difference between the second temperature and the first temperature.

[0054] The ambient temperature calculated in the above embodiment is increased from the first temperature T0 to the second temperature T n After that, the frequency drift df(T n ), the first characteristic frequency f(T0) and the temperature difference dT between the second temperature and the first temperature are substituted into the above calculation formula of the resonant frequency temperature coefficient to calculate and obtain the resonant frequency temperature coefficient of the sample to be tested.

[0055] Figure 3 This is a flow chart of a method for reducing the resonance frequency temperature coefficient error according to one embodiment of the present invention. In one embodiment, after calculating the resonance frequency temperature coefficient of the sample to be tested based on the frequency drift and the first characteristic frequency, the performance testing method also includes the following steps S150 to S170.

[0056] S150: adjusting the ambient temperature to a plurality of different temperature values, and testing and obtaining the characteristic frequencies of the sample to be tested at different temperature values ​​respectively.

[0057] S160: Calculate the resonant frequency temperature coefficient of the sample to be tested at different temperatures according to the characteristic frequencies at different temperature values.

[0058] S170: Calculate an average value of all the obtained resonant frequency temperature coefficients.

[0059] The ambient temperature in the high and low temperature test box is raised to multiple different temperature values, and the multiple different temperature values ​​are all greater than the first temperature, and the characteristic frequency f(T n ). The characteristic frequency f(T n ) are substituted into the calculation formula of frequency drift, and the frequency drift of the sample to be tested after the temperature is increased from room temperature to different temperature values ​​is calculated respectively. Then, the frequency drift of the sample to be tested after the temperature is increased from room temperature to different temperature values ​​is substituted into the calculation formula of the resonant frequency temperature coefficient TCF, and multiple resonant frequency temperature coefficients TCF are calculated. By performing temperature increase tests multiple times, a resonant frequency temperature coefficient TCF is obtained for each temperature increase test, and the average value of all the resonant frequency temperature coefficients TCF is obtained, the experimental error of the resonant frequency temperature coefficient TCF can be effectively reduced.

[0060] It should be understood that although Figure 1-Figure 3The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1-Figure 3 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0061] In one of the embodiments, when the sample to be tested is fixed on the infrared imaging device, the sample to be tested is fixed at a fixed position on the heating table of the infrared imaging device by thermal conductive adhesive. In this embodiment, the infrared imaging device is a microscopic infrared imaging platform. Since the sample to be tested is a micro-nano device, it is necessary to use a microscopic infrared imaging platform to perform microscopic infrared imaging on the sample to be tested to obtain the surface temperature field information of the sample to be tested. Using thermal conductive adhesive to connect the sample to be tested with the heating table of the microscopic infrared imaging platform can not only form good thermal contact between the sample to be tested and the heating table of the microscopic infrared imaging platform, but also ensure that the position of the sample to be tested can remain unchanged during subsequent testing.

[0062] In one embodiment, after the sample to be tested is fixed on the heating table of the microscopic infrared imaging platform, the sample to be tested is electrically connected to realize real-time monitoring of the input power and output signal of the sample to be tested. Without applying input power to the sample to be tested, the temperature of the heating table is set, and the heating table is heated to a preset temperature. In this embodiment, the heating table is heated to 70°C. After the heating table is heated to 70°C, the thermal emissivity of the surface material of the sample to be tested is calibrated to improve the accuracy of the surface temperature field information obtained when the imaging test of the sample to be tested is performed, and reduce data errors.

[0063] Keep the position of the sample to be tested on the heating table of the microscopic infrared imaging platform unchanged, and apply a preset input power P to the sample to be tested. n When the temperature distribution on the surface of the sample to be tested is stable, the microscopic infrared imaging platform is used to perform microscopic infrared imaging on the sample to be tested and extract the surface temperature field information of the sample to be tested.

[0064] After obtaining the surface temperature field information of the sample to be tested, while maintaining the preset input power P n Under the same conditions, the characteristic frequency f(P n ). The measured characteristic frequency f(P n) and the resonant frequency temperature coefficient TCF obtained in the above embodiment are substituted into the equivalent temperature rise calculation formula to calculate the equivalent temperature rise (or device temperature) generated by the self-heating effect under the preset input power condition. The equivalent temperature rise calculation formula is:

[0065]

[0066] Where, dT(P) is the equivalent temperature rise, f(T0) is the first characteristic frequency, df(P n ) is the frequency drift at preset input power relative to no input power, and TCF is the temperature coefficient of resonant frequency.

[0067] In one of the embodiments, after applying a preset input power to the sample to be tested, using an infrared imaging device to perform an imaging test on the sample to be tested, and obtaining surface temperature field information of the sample to be tested under the preset input power conditions, the performance testing method also includes obtaining key feature information of the sample to be tested under the preset input power conditions based on the surface temperature field information.

[0068] The emergence of self-heating effect can cause micro-nano devices to fail, and the failure mainly comes from two modes, namely performance degradation and structural damage. The inherent physical mechanism of performance degradation is that some related materials in micro-nano devices, such as elastic modulus, density, thickness, etc., have temperature correlation. Therefore, when the device temperature rises significantly due to self-heating, it may cause the resonant frequency of the micro-nano device to deviate downward, and cause the passband of the micro-nano device to drift and increase the insertion loss within the band. The physical mechanism of structural damage failure is that the concentrated self-heating heat will cause the film to warp in the form of thermal stress, and the warping will cause a sharp increase in local current density and further aggravate the self-heating effect.

[0069] It can be seen that when the overall average temperature is not high, but the local temperature point is too high, it is also very likely to cause the filter to be damaged and fail. Therefore, the key characteristic information of micro-nano devices includes information such as maximum temperature, average temperature and temperature gradient. The above key characteristic information has an important impact on the performance stability and reliability of micro-nano devices.

[0070] In one embodiment, the key characteristic information includes the temperature value of each point on the surface of the sample to be tested, the maximum temperature on the surface of the sample to be tested, the average temperature on the surface of the sample to be tested, and the temperature gradient information on the surface of the sample to be tested.

[0071] According to the surface temperature field information of the sample to be tested under the preset input power conditions, the temperature value of each point on the surface of the sample to be tested can be intuitively obtained, and by comparing the temperature values ​​at each point, the highest temperature information on the surface of the sample to be tested can be obtained. The average temperature on the surface of the sample to be tested can be obtained by averaging the temperature values ​​of each point on the surface of the sample to be tested. At the same time, based on the temperature values ​​of each point, the temperature gradient information of the entire surface of the sample to be tested can also be calculated. Therefore, the technology of the present invention is based on technologies such as TCF and microscopic infrared imaging. On the basis of obtaining the temperature rise of micro-nano devices under different power loads and the frequency drift caused by them, the equivalent temperature rise value of micro-nano devices under specific power loads and the temperature distribution information of different parts in the structure are obtained, including key characteristic information such as the highest temperature, average temperature and temperature gradient.

[0072] The performance testing method provided by the present invention can not only obtain the equivalent temperature rise value of the sample to be tested under the self-heating effect caused by a specific power load, but also can further obtain richer information such as the temperature field generated by the specific power load on the sample to be tested under the equivalent temperature rise value, including key characteristic information such as the maximum temperature, average temperature and temperature gradient as mentioned above, which can provide solid support for the design, reliability evaluation and analysis, failure mechanism modeling and other work of related products.

[0073] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0074] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0075] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A performance testing method, characterized in that: include: Testing the sample to be tested under different temperature environments to obtain the resonant frequency temperature coefficient of the sample to be tested; Fixing the sample to be tested on an infrared imaging device; Applying a preset input power to the sample to be tested, using the infrared imaging device to perform an imaging test on the sample to be tested, and obtaining surface temperature field information of the sample to be tested under the preset input power condition; Obtaining key characteristic information of the sample to be tested under a preset input power condition according to the surface temperature field information; wherein the key characteristic information includes the temperature value of each point on the surface of the sample to be tested, the highest temperature on the surface of the sample to be tested, the average temperature on the surface of the sample to be tested, and the temperature gradient information on the surface of the sample to be tested; While keeping the preset input power applied to the sample to be tested unchanged, testing and obtaining the characteristic frequency of the sample to be tested; The equivalent temperature rise of the sample to be tested under a preset input power condition is calculated and obtained according to the resonant frequency temperature coefficient and the characteristic frequency.

2. The performance testing method according to claim 1, characterized in that: The step of testing the sample under test under different temperature environments to obtain the resonant frequency temperature coefficient of the sample under test includes: When the ambient temperature is a first temperature, testing and obtaining a first characteristic frequency of the sample to be tested; When the ambient temperature is a second temperature, testing and obtaining a second characteristic frequency of the sample to be tested; wherein the second temperature is greater than the first temperature; Calculating, according to the first characteristic frequency and the second characteristic frequency, a frequency drift after the ambient temperature rises from a first temperature to a second temperature; The resonant frequency temperature coefficient of the sample to be tested is calculated according to the frequency drift and the first characteristic frequency.

3. The performance testing method according to claim 2, characterized in that: The calculation formula of the frequency drift is: df(T n )=f(T n )-f(T0); Among them, df(T n ) is the frequency drift, f(T n ) is the second characteristic frequency, and f(T0) is the first characteristic frequency.

4. The performance testing method according to claim 3, characterized in that: The calculation formula of the resonant frequency temperature coefficient is: Where TCF is the temperature coefficient of resonant frequency, f(T0) is the first characteristic frequency, df(T n ) is the frequency drift, and dT is the temperature difference between the second temperature and the first temperature.

5. The performance testing method according to claim 2, characterized in that: After calculating the resonant frequency temperature coefficient of the sample to be tested according to the frequency drift and the first characteristic frequency, the performance testing method further includes: Adjusting the ambient temperature to a plurality of different temperature values, and testing and obtaining the characteristic frequencies of the sample to be tested at different temperature values ​​respectively; Calculate the resonant frequency temperature coefficient of the sample to be tested at different temperatures according to the characteristic frequencies at different temperature values; The average value of all the resonant frequency temperature coefficients obtained is calculated.

6. The performance testing method according to claim 2, characterized in that: The first temperature is room temperature.

7. The performance testing method according to claim 1, characterized in that: When the sample to be tested is fixed on the infrared imaging device, the sample to be tested is fixed at a fixed position on the heating table of the infrared imaging device by using a thermal conductive adhesive.

8. The performance testing method according to claim 1 or 2, characterized in that: After the sample to be tested is fixed on the infrared imaging device, the performance testing method further comprises: The infrared imaging device is heated to a preset temperature, and the thermal emissivity of the surface material of the sample to be tested is calibrated.

Images