Solar cell inspection device and inspection method

Abstract

Technical Problem: Provided is an inspection device and an inspection method for a solar cell that facilitates appropriate detection of defects associated with a dividing groove of a back electrode layer. Solution: An inspection device (100) includes a measuring unit. The measuring unit measures a conduction state between a first terminal pair contacting a first unit back electrode layer adjacent to a first side portion of a first dividing groove, a conduction state between a second terminal pair contacting a second unit back electrode layer adjacent to a second side portion of the first dividing groove, and an insulation state between a third terminal pair including one terminal (T) of the first terminal pair and one terminal (T) of the second terminal pair.

Description

Technical Field

[0001] The present invention relates to an inspection device and an inspection method for a solar cell. Background Art

[0002] As an inspection apparatus for solar cells, an apparatus that images an inspection object using, for example, a line scan camera is known. Patent Document 1 describes an example of a conventional inspection apparatus.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 5885477 Summary of the Invention

[0006] (1) Technical issues to be resolved

[0007] The back electrode layer of a solar cell is divided into a plurality of unit back electrode layers by a plurality of dividing grooves. A group of unit back electrode layers adjacent to each other via the dividing grooves are insulated by the dividing grooves. There are cases where the back electrode layer contains defects related to the dividing grooves. For example, during the process of forming the dividing grooves, a portion of the back electrode layer is not removed and remains in the dividing grooves. A group of unit back electrode layers adjacent to each other via the dividing grooves is connected by the portion of the back electrode layer remaining in the dividing grooves, thereby reducing the insulation resistance of the group of unit back electrode layers. The inspection device of Patent Document 1 does not envision the detection of such defects.

[0008] An object of the present invention is to provide an inspection device and an inspection method for a solar cell that facilitate appropriate detection of defects associated with dividing grooves of a back electrode layer.

[0009] (2) Technical solution

[0010] The inspection device for the solar cell involved in the present invention comprises a measuring unit, which measures the conduction state between a first terminal pair in contact with a first unit back electrode layer adjacent to a first side portion of a dividing groove, the conduction state between a second terminal pair in contact with a second unit back electrode layer adjacent to a second side portion of the dividing groove, and the insulation state between a third terminal pair including one terminal of the first terminal pair and one terminal of the second terminal pair.

[0011] In the above inspection device, the conduction state and the insulation state measured by the measuring unit can be used to detect defects related to the dividing grooves. This helps to appropriately detect defects related to the dividing grooves.

[0012] In one example of the solar cell inspection apparatus, an analysis unit is further provided for determining a defect in the dividing groove by referring to the conduction state and the insulation state measured by the measurement unit.

[0013] According to the inspection device described above, defects in the dividing grooves can be appropriately determined.

[0014] In one example of the solar cell inspection apparatus, the analysis unit determines that a defect exists in the dividing groove when it is confirmed that there is conduction between the first-type terminal pairs and the second-type terminal pairs and that there is no insulation between the third-type terminal pairs.

[0015] According to the inspection device described above, the presence of defects in the dividing grooves can be appropriately detected.

[0016] In one example of the solar cell inspection apparatus, the analysis unit determines that there is no defect in the dividing groove when it is confirmed that there is conduction between the first type terminal pairs and the second type terminal pairs and that there is insulation between the third type terminal pairs.

[0017] According to the inspection device described above, it is possible to appropriately detect the absence of defects in the dividing grooves.

[0018] In one example of the solar cell inspection apparatus, the analysis unit stops (holds) determination regarding defects in the dividing grooves when confirming that there is no conduction between at least one of the first-type terminal pair and the second-type terminal pair.

[0019] According to the inspection apparatus described above, it is possible to suppress errors in determination regarding defects in the dividing grooves.

[0020] In one example of the above-mentioned solar cell inspection device, a removal portion is further provided, and the removal portion allows current to flow between the third-type terminal pair.

[0021] According to the above-mentioned inspection device, foreign matter remaining in the dividing groove may be removed by the flow of electric current.

[0022] In one example of the inspection device for the solar cell, it is further provided with the first terminal pair, the second terminal pair, and the third terminal pair, the first terminal pair is configured to contact the respective ends of the first unit back electrode layer, the second terminal pair is configured to contact the respective ends of the second unit back electrode layer, the third terminal pair includes one terminal of the first terminal pair and one terminal of the second terminal pair, and the distance between the terminals of the third terminal pair in the long side direction of the dividing groove is equal to the distance between the terminals of the first terminal pair or the distance between the terminals of the second terminal pair in the long side direction of the dividing groove.

[0023] If a defect is contained within the dividing groove, the location of the defect relative to the longitudinal direction of the dividing groove will vary depending on, for example, the processing conditions used to form the dividing groove. In the above-described inspection apparatus, the substantially entire resistance of each cell back electrode layer is reflected in the insulation resistance measurement using the third type of terminal pair. This reduces the effect of the resistance of each cell back electrode layer on the insulation resistance measurement, which varies depending on the location of the defect within the dividing groove.

[0024] (3) Beneficial effects

[0025] The solar cell inspection device and inspection method according to the present invention are useful for appropriately detecting defects related to the dividing grooves of the back electrode layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a cross-sectional view of a solar cell.

[0027] Figure 2 Figure (1) shows the manufacturing process of a solar cell.

[0028] Figure 3 Figure (2) shows the manufacturing process of a solar cell.

[0029] Figure 4 FIG. (3) is a diagram of the manufacturing process of a solar cell.

[0030] Figure 5 FIG. (4) is a diagram of the manufacturing process of a solar cell.

[0031] Figure 6 FIG. (5) is a diagram of the manufacturing process of a solar cell.

[0032] Figure 7 FIG. (6) is a diagram showing the manufacturing process of a solar cell.

[0033] Figure 8 FIG. (7) is a diagram showing the manufacturing process of a solar cell.

[0034] Figure 9 FIG. (8) is a diagram showing the manufacturing process of a solar cell.

[0035] Figure 10 This is a diagram showing an example of a groove defect.

[0036] Figure 11 It is a block diagram of the inspection device.

[0037] Figure 12 is a top view of the back electrode pair.

[0038] Figure 13 This is an appearance diagram of the inspection device.

[0039] Figure 14 This is a diagram showing an example of a standby state.

[0040] Figure 15 This is a flowchart showing an example of an inspection method.

[0041] Description of Reference Numerals

[0042] 10-solar cell; 100-inspection device; F11-measuring unit; F13-analysis unit; F15-removal unit; TA-first terminal pair; TB-second terminal pair; TC-third terminal pair; P-dividing groove; P11-first side; P12-second side; E1-first unit back electrode layer; E2-second unit back electrode layer; S1-first end; S2-second end. DETAILED DESCRIPTION

[0043] Figure 1 Represents a cross-section of the solar cell 10. In the classification based on the material of the light absorbing layer, the solar cell 10 is, for example, a compound solar cell. In the classification based on thickness, the solar cell 10 is, for example, a thin-film solar cell. An orthogonal coordinate system is used in the description of the solar cell 10. The plane defined by the X-axis and the Y-axis is referred to as the "reference plane". The plane of the solar cell 10 is parallel to the reference plane. The Z-axis is orthogonal to the plane of the solar cell 10. The direction parallel to the X-axis is referred to as the "transverse direction". One of the transverse directions is referred to as the "first transverse direction". The other transverse direction is referred to as the "second transverse direction". The direction parallel to the Y-axis is referred to as the "longitudinal direction". One of the longitudinal directions is referred to as the "first longitudinal direction". The other longitudinal direction is referred to as the "second longitudinal direction". The direction parallel to the Z-axis is referred to as the "thickness direction". One of the thickness directions is referred to as the "first thickness direction". The other thickness direction is referred to as the "second thickness direction".

[0044] Solar cell 10 is, for example, a panel. When viewed from above, solar cell 10 has a quadrilateral shape. The outline of solar cell 10, when viewed from above, includes two sets of opposite sides. One set of opposite sides is parallel to the transverse direction. The other set of opposite sides is parallel to the longitudinal direction. Solar cell 10 includes a first principal surface 10A and a second principal surface 10B. First principal surface 10A is oriented in the first thickness direction. Second principal surface 10B is oriented in the second thickness direction. Each principal surface 10A and 10B is parallel to a reference plane.

[0045] The solar cell 10 includes multiple layers. In one example, the solar cell 10 includes a substrate 20, a back electrode layer 30, an intermediate layer 40, and a window layer 50. The substrate 20 includes a first principal surface 20A and a second principal surface 20B. The first principal surface 20A faces the first thickness direction. The second principal surface 20B faces the second thickness direction. The second principal surface 20B constitutes the second principal surface 10B of the solar cell 10. The back electrode layer 30 is laminated on the first principal surface 20A of the substrate 20. The back electrode layer 30 includes a first principal surface 30A and a second principal surface 30B. The first principal surface 30A faces the first thickness direction. The second principal surface 30B faces the second thickness direction. The second principal surface 30B is opposite the first principal surface 20A of the substrate 20.

[0046] The intermediate layer 40 is laminated on the first principal surface 30A of the back electrode layer 30. The intermediate layer 40 includes a first principal surface 40A and a second principal surface 40B. The first principal surface 40A faces the first thickness direction. The second principal surface 40B faces the second thickness direction. The second principal surface 40B faces the first principal surface 30A of the back electrode layer 30. The structure of the intermediate layer 40 is exemplified. In the first example, the intermediate layer 40 is composed of a light absorbing layer 41. The light absorbing layer 41 is laminated on the first principal surface 30A of the back electrode layer 30. The light absorbing layer 41 includes a first principal surface 41A and a second principal surface 41B. The first principal surface 41A faces the first thickness direction. The second principal surface 41B faces the second thickness direction. The first principal surface 41A constitutes the first principal surface 40A of the intermediate layer 40. The second principal surface 41B faces the first principal surface 30A of the back electrode layer 30. In the second example, the intermediate layer 40 is composed of the light absorbing layer 41 and a buffer layer 42. The buffer layer 42 is laminated on the first principal surface 41A of the light absorbing layer 41. The buffer layer 42 includes a first principal surface 42A and a second principal surface 42B. The first principal surface 42A is oriented in the first thickness direction. The second principal surface 42B is oriented in the second thickness direction. The first principal surface 42A constitutes the first principal surface 40A of the intermediate layer 40. The second principal surface 42B is opposite to the first principal surface 41A of the light absorbing layer 41. In the third example, the intermediate layer 40 has a structure in which another layer is laminated on the intermediate layer 40 of the second example.

[0047] The window layer 50 is laminated on the first main surface 40A of the intermediate layer 40. The window layer 50 includes a first main surface 50A and a second main surface 50B. The first main surface 50A faces the first thickness direction. The second main surface 50B faces the second thickness direction. The second main surface 50B faces the first main surface 40A of the intermediate layer 40.

[0048] Regarding hardness, substrate 20 may be, for example, a rigid substrate, a flexible substrate, or a rigid-flexible substrate. Regarding electrical properties, substrate 20 may be, for example, an insulator or a semiconductor. Regarding transparency, substrate 20 may be, for example, a transparent substrate. In one example, substrate 20 is a glass substrate. Examples of glass substrates include aluminosilicate glass, soda-lime glass, borosilicate glass, lead glass, alkali barium glass, aluminoborosilicate glass, and alkali-free glass.

[0049] The back electrode layer 30 is, for example, a metal electrode layer. The material of the back electrode layer 30 is, for example, selected from molybdenum (Mo), titanium (Ti), and chromium (Cr). The light absorption layer 41 is, for example, a p-type semiconductor. The light absorption layer 41 is, for example, a compound semiconductor. The type of compound semiconductor is, for example, selected from CIS compounds, CIGS compounds, CZTS compounds, CdTe compounds, and CdS compounds. The main components of CIS compounds are copper (Cu), indium (In), and selenium (Se). The main components of CIGS compounds are copper (Cu), indium (In), gallium (Ga), and selenium (Se). The main components of CZTS compounds are copper (Cu), zinc (Zn), tin (Sn), sulfur (S), and selenium (Se). The main components of CdTe compounds are cadmium (Cd) and tellurium (Te). The main components of CdS compounds are cadmium (Cd) and sulfur (S).

[0050] The buffer layer 42 is, for example, a high resistance layer. The buffer layer 42 is, for example, an n-type semiconductor. The material of the buffer layer 42 is, for example, selected from cadmium sulfide (CdS), zinc oxide (ZnO), zinc sulfide (ZnS), and indium sulfide (InS).

[0051] The window layer 50 is, for example, an n-type semiconductor. The window layer 50 is, for example, a transparent conductive film. The type of the transparent conductive film is, for example, selected from tin oxide thin films, zinc oxide thin films, and indium oxide thin films.

[0052] The solar cell 10 includes a plurality of dividing grooves P and a plurality of cells 60. The plurality of dividing grooves P divide the back electrode layer 30, the intermediate layer 40, and the window layer 50 into a plurality of cells 60. The plurality of cells 60 are arranged in a horizontal direction. In one example, the cells 60 are elongated in the longitudinal direction. The long sides of the cells 60 are parallel to the longitudinal direction. The plurality of dividing grooves P include three types of dividing grooves P. The types of dividing grooves P are first dividing grooves P1, second dividing grooves P2, and third dividing grooves P3. The solar cell 10 includes a plurality of first dividing grooves P1, a plurality of second dividing grooves P2, and a plurality of third dividing grooves P3. In one example, each of the dividing grooves P1 to P3 is elongated in the longitudinal direction. Each of the dividing grooves P1 to P3 is parallel to the longitudinal direction.

[0053] First dividing grooves P1 are formed in the back electrode layer 30. Multiple first dividing grooves P1 are formed in the back electrode layer 30. Multiple first dividing grooves P1 are arranged in a transverse direction. Second dividing grooves P2 are formed in the middle layer 40. Multiple second dividing grooves P2 are formed in the middle layer 40. Multiple second dividing grooves P2 are arranged in a transverse direction. Third dividing grooves P3 are formed in the middle layer 40 and the window layer 50. Multiple third dividing grooves P3 are formed in the middle layer 40 and the window layer 50. Multiple third dividing grooves P3 are arranged in a transverse direction. The middle layer 40 includes a first protrusion 40P that fills the first dividing grooves P1. The window layer 50 includes a second protrusion 50P that fills the second dividing grooves P2.

[0054] Adjacent cells 60 in the transverse direction are divided by first dividing grooves P1 and third dividing grooves P3. Each cell 60 is electrically connected in series. A cell 60 includes a window layer 50 and an intermediate layer 40 disposed between a pair of laterally aligned third dividing grooves P3, and a back electrode layer 30 disposed between a pair of laterally aligned first dividing grooves P1. The back electrode layer 30, intermediate layer 40, and window layer 50 that constitute a cell 60 are referred to as a "cell back electrode layer 61," a "cell intermediate layer 62," and a "cell window layer 63," respectively.

[0055] The back electrode layer 30 is divided into a plurality of unit back electrode layers 61 by a plurality of first dividing grooves P1. A pair of unit back electrode layers 61 adjacent in the transverse direction via the first dividing grooves P1 is referred to as a "back electrode pair E." One unit back electrode layer 61 in a back electrode pair is insulated from the other unit back electrode layer 61 by the first dividing grooves P1.

[0056] The cell back electrode layer 61 is connected to the cell window layer 63 of another cell 60 adjacent in the first lateral direction. The intermediate layer 40 and the window layer 50 are divided into a plurality of cell intermediate layers 62 and a plurality of cell window layers 63 by a plurality of third dividing grooves P3. The cell window layer 63 is connected to the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction. The cell intermediate layer 62 is divided into a first layer structure portion 62A and a second layer structure portion 62B by a second dividing groove P2. The first layer structure portion 62A is stacked on the cell back electrode layer 61. The second layer structure portion 62B is stacked on the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction.

[0057] The cell intermediate layer 62 includes a first protrusion 40P that fills the first dividing groove P1. The first protrusion 40P insulates one cell back electrode layer 61 from the other back electrode layer 61 included in the back electrode pair E. The cell window layer 63 includes a second protrusion 50P that fills the second dividing groove P2. The second protrusion 50P connects to the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction.

[0058] Each of the dividing grooves P1 to P3 is formed by, for example, scribing. The first dividing groove P1 is formed by, for example, laser scribing. The second dividing groove P2 and the third dividing groove P3 are formed by, for example, mechanical scribing.

[0059] The solar cell 10 is manufactured, for example, as follows. Figure 2 In the first step shown, the substrate 20 is cleaned. Figure 3 In the second step shown, a back electrode layer 30 is formed on the substrate 20. The back electrode layer 30 is formed by, for example, vapor deposition. Figure 4 In the third step shown, the back electrode layer 30 is patterned to form a plurality of first dividing grooves P1 on the back electrode layer 30. The first dividing grooves P1 are formed by, for example, laser scribing. Figure 5 In the fourth process shown, a light absorbing layer 41 is formed on the back electrode layer 30. In one example, the fourth process includes the following steps. A precursor as a metal thin film is formed on the back electrode layer 30. The precursor is formed by, for example, vapor deposition. The precursor is annealed in a specific gas atmosphere. The precursor is transformed into a compound by annealing. In one example, the precursor is selenized or sulfurized by annealing. Figure 6 In the fifth step shown, a buffer layer 42 is formed on the light absorbing layer 41. The buffer layer 42 is formed by, for example, vapor deposition. Figure 7 In the sixth step shown, the intermediate layer 40 is patterned to form a plurality of second dividing grooves P2 on the intermediate layer 40. The second dividing grooves P2 are formed by, for example, mechanical scribing. Figure 8 In the seventh step shown, a window layer 50 is formed on the intermediate layer 40. The window layer 50 is formed by, for example, vapor deposition. Figure 9 In the eighth step shown, the intermediate layer 40 and the window layer 50 are patterned to form a plurality of third dividing grooves P3 on the intermediate layer 40 and the window layer 50. The third dividing grooves P3 are formed by, for example, mechanical scribing.

[0060] The third step (refer to Figure 4 ) is referred to as "work-in-progress 10X." The portion of work-in-progress 10X and solar cell 10 corresponding to first dividing groove P1 in the thickness direction is referred to as "designated portion Q." The width of designated portion Q in the transverse direction is equal to the width of first dividing groove P1.

[0061] The back electrode layer 30 may include defects associated with the dividing grooves P (hereinafter referred to as “groove defects”). Figure 10An example of a groove defect. In the process of forming the first dividing groove P1, there is a case where a portion of the designated portion Q of the back electrode layer 30 is not removed and remains in the first dividing groove P1. The portion of the designated portion Q remaining in the first dividing groove P1 is referred to as a "residual portion R". There is a case where a unit back electrode layer 61 included in the back electrode pair E is connected to another unit back electrode layer 61 through the residual portion R. In the portion where the back electrode pair E is connected through the residual portion R, the insulation resistance of the back electrode pair E is reduced. The residual portion R is generated due to the influence of various processing conditions in the scribing process for forming the first dividing groove P1. The formation range and shape of the residual portion R vary depending on the processing conditions.

[0062] Figure 12 Represents the back electrode pair E. The back electrode pair E includes a pair of unit back electrode layers 61. The unit back electrode layer 61 and the first dividing groove P1 are long in the longitudinal direction. The first dividing groove P1 includes a first side portion P11 and a second side portion P12. Each side portion P11 and P12 is long in the longitudinal direction of the first dividing groove P1. A space of the first dividing groove P1 is formed between the first side portion P11 and the second side portion P12. One unit back electrode layer 61 included in the back electrode pair E is referred to as the "first unit back electrode layer E1." The other unit back electrode layer 61 included in the back electrode pair E is referred to as the "second unit back electrode layer E2." The first unit back electrode layer E1 is adjacent to the first side portion P11 of the first dividing groove P1 in the transverse direction. The second unit back electrode layer E2 is adjacent to the second side portion P12 of the first dividing groove P1 in the transverse direction.

[0063] The center of the unit back electrode layer 61 in the longitudinal direction is called the "electrode center SC". One end of the unit back electrode layer 61 in the longitudinal direction is called the "first end S1". The other end of the unit back electrode layer 61 in the longitudinal direction is called the "second end S2". The portion between the first end S1 in the longitudinal direction and the electrode center SC is called the "first middle portion S3". The portion between the second end S2 in the longitudinal direction and the electrode center SC is called the "second middle portion S4". One edge of the unit back electrode layer 61 in the longitudinal direction is called the "first edge S5". The other edge of the unit back electrode layer 61 in the longitudinal direction is called the "second edge S6". The first end S1 is a constant range including the first edge S5. The second end S2 is a constant range including the second edge S6.

[0064] Figure 11The block diagram of the inspection device 100 is shown. The inspection device 100 includes at least one of a function associated with measuring a groove defect of the inspection object W and a function associated with removing a residual portion R. In the function associated with measuring a groove defect, the electrical characteristics of the inspection object W are measured, and the groove defect of the inspection object W is detected with reference to the result. In the function associated with removing the residual portion R, a current that helps evaporate the residual portion R is supplied to the back electrode pair E. The inspection device 100 includes a plurality of terminals T and a plurality of functional blocks F10. The plurality of terminals T include, for example, a first terminal pair TA, a second terminal pair TB, and a third terminal pair TC. The plurality of functional blocks F10 include, for example, a measuring unit F11, an AD conversion unit F12, an analysis unit F13, a data conversion unit F14, and a removal unit F15.

[0065] The measuring unit F11 measures the conduction state between the first type terminal pair TA, the conduction state between the second type terminal pair TB, and the insulation state between the third type terminal pair TC. In one example, the measuring unit F11 includes a first measuring unit F11A and a second measuring unit F11B. The first measuring unit F11A measures the conduction state between the first type terminal pair TA and the conduction state between the second type terminal pair TB. The second measuring unit F11B measures the insulation state between the third type terminal pair TC. The current flowing between the first type terminal pair TA or the resistance between the first type terminal pair TA reflects the conduction state between the first type terminal pair TA. In the measurement of the conduction state between the first type terminal pair TA, for example, the current or resistance between the first type terminal pair TA is measured. The current flowing between the second type terminal pair TB or the resistance between the second type terminal pair TB reflects the conduction state between the second type terminal pair TB. In the measurement of the conduction state between the second type terminal pair TB, for example, the current or resistance between the second type terminal pair TB is measured. The resistance between the third terminal pair TC or the current flowing between the third terminal pair TC reflects the insulation state between the third terminal pair TC. In measuring the insulation state between the third terminal pair TC, for example, the resistance or current between the third terminal pair TC is measured.

[0066] The A / D converter F12 converts the output signal of the measuring unit F11 into a digital signal. The analyzing unit F13 determines the presence of groove defects in the inspection target area by referring to the output signal of the A / D converter F12. The data converter F14 converts the calculation results of the analyzing unit F13 into data in a specified format. The eliminating unit F15 flows a current between the third-type terminal pair TC.

[0067] The first terminal pair TA includes a pair of terminals T. There is a case where one terminal T of the first terminal pair TA is represented as "terminal TA1". There is a case where the other terminal T of the first terminal pair TA is represented as "terminal TA2". The first terminal pair TA is in contact with the first unit back electrode layer E1. The second terminal pair TB includes a pair of terminals T. There is a case where one terminal T of the second terminal pair TB is represented as "terminal TB1". There is a case where the other terminal T of the second terminal pair TB is represented as "terminal TB2". The second terminal pair TB is in contact with the second unit back electrode layer E2.

[0068] The third type of terminal pair TC includes a terminal T of the first type of terminal pair TA and a terminal T of the second type of terminal pair TB. In the first example, the third type of terminal pair TC includes a terminal TA1 of the first type of terminal pair TA and a terminal TB1 of the second type of terminal pair TB. In the second example, the third type of terminal pair TC includes a terminal TA1 of the first type of terminal pair TA and a terminal TB2 of the second type of terminal pair TB. In the third example, the third type of terminal pair TC includes a terminal TA2 of the first type of terminal pair TA and a terminal TB1 of the second type of terminal pair TB. In the fourth example, the third type of terminal pair TC includes a terminal TA2 of the first type of terminal pair TA and a terminal TB2 of the second type of terminal pair TB.

[0069] The cell back electrode layer 61 includes a first contacted portion that contacts one terminal T of the first terminal pair TA or one terminal T of the second terminal pair TB, and a second contacted portion that contacts the other terminal T of the first terminal pair TA or the other terminal T of the second terminal pair TB. The first contacted portion and the second contacted portion are, for example, selected from the first end portion S1, the second end portion S2, the first middle portion S3, and the second middle portion S4 of the cell back electrode layer 61.

[0070] The distance between the first contacted portion and the second contacted portion in the longitudinal direction is referred to as the "measurement distance". The content of the measurement distance is exemplified. In the first example, the measurement distance is greater than the first prescribed distance. The first prescribed distance corresponds to, for example, the distance between the first end S1 and the second end S2 in the longitudinal direction. In the second example, the measurement distance is greater than the second prescribed distance. The second prescribed distance corresponds to the distance between the first end S1 or the second end S2 in the longitudinal direction and the electrode center SC. The longer the measurement distance, the smaller the influence of the position of the groove defect in the first dividing groove P1 on the measurement of the resistance between the third terminal pair TC. This helps to improve the measurement accuracy of the resistance.

[0071] The relationship between the first terminal pair TA and the first unit back electrode layer E1 is illustrated. In the first example, terminal TA1 contacts the first end S1. Terminal TA2 contacts the second end S2. In the second example, terminal TA1 contacts the first end S1. Terminal TA2 contacts the second middle portion S4. In the third example, terminal TA1 contacts the first end S1. Terminal TA2 contacts the electrode center SC. In the fourth example, terminal TA1 contacts the first end S1. Terminal TA2 contacts the first middle portion S3. In the fifth example, terminal TA1 contacts the first end S1. Terminal TA2 contacts a portion of the first end S1 that is different from the portion in contact with terminal TA1.

[0072] The relationship between the second terminal pair TB and the second unit back electrode layer E2 is illustrated. In the first example, terminal TB1 contacts the first end S1. Terminal TB2 contacts the second end S2. In the second example, terminal TB1 contacts the first end S1. Terminal TB2 contacts the second middle portion S4. In the third example, terminal TB1 contacts the first end S1. Terminal TB2 contacts the electrode center SC. In the fourth example, terminal TB1 contacts the first end S1. Terminal TB2 contacts the first middle portion S3. In the fifth example, terminal TB1 contacts the first end S1. Terminal TB2 contacts a portion of the first end S1 that is different from the portion contacted by terminal TB1.

[0073] Figure 13 An example of the hardware structure of the inspection device 100 is shown. An orthogonal coordinate system is used in the description of the inspection device 100. The plane defined by the X-axis and the Y-axis is referred to as the "reference plane". The plane of the inspection device 100 is parallel to the reference plane. The Z-axis is perpendicular to the plane of the inspection device 100. The direction parallel to the X-axis is referred to as the "width direction". The direction parallel to the Y-axis is referred to as the "depth direction". The direction parallel to the Z-axis is referred to as the "height direction". In one example, the lateral direction of the solar cell 10 is parallel to the width direction of the inspection device 100. The longitudinal direction of the solar cell 10 is parallel to the depth direction of the inspection device 100. The thickness direction of the solar cell 10 is parallel to the height direction of the inspection device 100.

[0074] The object to be inspected W is, for example, a work in progress 10X (see Figure 4 、 Figure 10 ). The object to be inspected W includes a first principal surface WA and a second principal surface WB. The first principal surface WA of the object to be inspected W is the first principal surface 30A of the back electrode layer 30. The second principal surface WB of the object to be inspected W is the second principal surface 20B of the substrate 20. The size of the object to be inspected W can be arbitrarily selected. In one example, the length of the object to be inspected W in the horizontal direction is within the range of 600 mm to 700 mm. The length of the object to be inspected W in the vertical direction is within the range of 1500 mm to 1600 mm.

[0075] The inspection apparatus 100 includes a probe unit 200, a measuring device 300, a power supply unit 400, a control unit 500, and a terminal device 600. The terminal pairs TA, TB, and TC are included in the probe unit 200. The measuring unit F11 is composed of, for example, the probe unit 200, the measuring device 300, and the control unit 500. The A / D converter F12 is included in the measuring device 300 or the control unit 500. The analyzing unit F13 and the data converter F14 are included in the control unit 500. The data in a specified format converted by the data converter F14 is, for example, data in a format used in the terminal device 600. The removing unit F15 is composed of, for example, the probe unit 200, the power supply unit 400, and the control unit 500.

[0076] In one example, the inspection device 100 further includes a conveying unit 110 and a workbench 120. The conveying unit 110 moves the probe unit 200 and the workbench 120 relative to each other. The workbench 120 supports the object to be inspected W. The structure of the moving object moved by the conveying unit 110 is exemplified. In the first example, the conveying unit 110 moves the probe unit 200 relative to the workbench 120. In the second example, the conveying unit 110 moves the workbench 120 relative to the probe unit 200. In the third example, the conveying unit 110 moves both the probe unit 200 and the workbench 120. The conveying unit 110 includes at least one of a first actuator that moves the probe unit 200 and a second actuator that moves the workbench 120. The first actuator converts the electrical energy supplied from the power supply into the movement of the probe unit 200. The second actuator converts the electrical energy supplied from the power supply into the movement of the workbench 120.

[0077] The structures for the relative movement of the conveying unit 110 are exemplified. In the first example, the conveying unit 110 includes a first conveying structure that enables the probe unit 200 and the workbench 120 to move relative to each other in the height direction of the inspection device 100. In the second example, the conveying unit 110 includes a second conveying structure that enables the probe unit 200 and the workbench 120 to move relative to each other in the width direction. In the third example, the conveying unit 110 includes a third conveying structure that enables the probe unit 200 and the workbench 120 to move relative to each other in the depth direction. In the fourth example, the conveying unit 110 includes at least two of the conveying structures of the first to third examples. In the illustrated example, the conveying unit 110 includes a first conveying structure that enables the probe unit 200 to move relative to the workbench 120 in the height direction.

[0078] The probe unit 200 includes a plurality of terminals T. The terminals T are, for example, terminals corresponding to a two-wire method (Japanese: 2-terminal method) or terminals corresponding to a four-wire method (Japanese: 4-terminal method). The plurality of terminals T include a plurality of first-type terminal pairs TA, a plurality of second-type terminal pairs TB, and a plurality of third-type terminal pairs TC. In one example, the probe unit 200 includes a first probe unit 210 and a second probe unit 220. The transport unit 110 moves each probe unit 210, 220 relative to the workbench 120 in a height direction.

[0079] The first probe unit 210 includes a first unit body 211 and a plurality of terminals T. The plurality of terminals T included in the first probe unit 210 are a portion of all the terminals T included in the probe unit 200. The first unit body 211 is mounted on the conveying unit 110. The first unit body 211 includes a housing 211A and a relay circuit 211B. The housing 211A is defined in a long side direction and a short side direction. The long side direction of the housing 211A is parallel to the width direction of the inspection device 100. The short side direction of the housing 211A is parallel to the depth direction of the inspection device 100. The relay circuit 211B is arranged inside the housing 211A. The plurality of terminals T are arranged outside the housing 211A. The plurality of terminals T are supported by the housing 211A. The plurality of terminals T are arranged along the long side direction of the housing 211A. The plurality of terminals T are electrically connected to the relay circuit 211B.

[0080] The number of terminals T of the first probe unit 210 is exemplified. In the first example, the number of terminals T of the first probe unit 210 is equal to the number of unit back electrode layers 61 provided on the object to be inspected W. In the second example, the number of terminals T of the first probe unit 210 is greater than the number of unit back electrode layers 61 provided on the object to be inspected W. In the third example, the number of terminals T of the first probe unit 210 is less than the number of unit back electrode layers 61 provided on the object to be inspected W.

[0081] The second probe unit 220 includes a second unit body 221 and a plurality of terminals T. The plurality of terminals T included in the second probe unit 220 are a portion of all the terminals T included in the probe unit 200. The second unit body 221 is mounted on the conveying unit 110. The second unit body 221 includes a housing 221A and a relay circuit 221B. The housing 221A is defined in a long side direction and a short side direction. The long side direction of the housing 221A is parallel to the width direction of the inspection device 100. The short side direction of the housing 221A is parallel to the depth direction of the inspection device 100. The relay circuit 221B is arranged inside the housing 221A. The plurality of terminals T are arranged outside the housing 221A. The plurality of terminals T are supported by the housing 221A. The plurality of terminals T are arranged along the long side direction of the housing 221A. The plurality of terminals T are electrically connected to the relay circuit 221B.

[0082] The number of terminals T of the second probe unit 220 is exemplified. In a first example, the number of terminals T of the second probe unit 220 is equal to the number of unit back electrode layers 61 provided on the object to be inspected W. In a second example, the number of terminals T of the second probe unit 220 is greater than the number of unit back electrode layers 61 provided on the object to be inspected W. In a third example, the number of terminals T of the second probe unit 220 is less than the number of unit back electrode layers 61 provided on the object to be inspected W.

[0083] In one example, the first probe unit 210 and the second probe unit 220 include the same number of terminals T. When the probe unit 200 is placed on the object W so as to measure electrical characteristics of the object W (hereinafter referred to as a "standby state"), each terminal T contacts the object W. Figure 14 This figure shows an example of a standby state. In the standby state, the terminals T of each probe unit 210 and 220 form a longitudinal terminal pair TL arranged in the longitudinal direction. The longitudinal terminal pair TL includes one terminal T of the first probe unit 210 and one terminal T of the second probe unit 220. Each longitudinal terminal pair TL corresponds to a first terminal pair TA or a second terminal pair TB. The probe unit 200 includes the same number of longitudinal terminal pairs TL as all the terminals T provided in the first probe unit 210 or the second probe unit 220.

[0084] Regarding a group of longitudinal terminal pairs TL that are adjacent in the transverse direction, one longitudinal terminal pair TL corresponds to the first type of terminal pair TA, and the other longitudinal terminal pair TL corresponds to the second type of terminal pair TB. In one example, each terminal pair TA to TC has the following relationship with the back electrode pair E. The terminal TA1 of the first type of terminal pair TA contacts the first end S1 of the first unit back electrode layer E1. The terminal TA2 of the first type of terminal pair TA contacts the second end S2 of the first unit back electrode layer E1. The terminal TB1 of the second type of terminal pair TB contacts the first end S1 of the second unit back electrode layer E2. The terminal TB2 of the second type of terminal pair TB contacts the second end S2 of the second unit back electrode layer E2. The third type of terminal pair TC includes the terminal TA1 of the first type of terminal pair TA and the terminal TB2 of the second type of terminal pair TB, or includes the terminal TA2 of the first type of terminal pair TA and the terminal TB1 of the second type of terminal pair TB.

[0085] The distance between the terminals TA1 and TA2 of the first type terminal pair TA and the distance between the terminals TB1 and TB2 of the second type terminal pair TB in the long direction of the first dividing groove P1 are equal. The distance between the third type terminal pair TC in the long direction of the first dividing groove P1 is equal to the distance between the terminals TA1 and TA2 of the first type terminal pair TA or the distance between the terminals TB1 and TB2 of the second type terminal pair TB in the long direction of the first dividing groove P1.

[0086] The measuring device 300 is electrically connected to the probe unit 200. The structure of the measuring device 300 is illustrated. In the first example, the measuring device 300 includes a multimeter. In the second example, the measuring device 300 includes an ammeter and a resistance measuring device that are separately constructed. The measuring device 300 measures the conduction state between the longitudinal terminal pair TL and the insulation state between the third terminal pair TC. When measuring the conduction state, for example, a constant voltage is applied between the longitudinal terminal pair TL, and the current flowing between the longitudinal terminal pair TL is measured. The resistance between the longitudinal terminal pair TL is measured based on the voltage and current between the longitudinal terminal pair TL. When measuring the insulation state, for example, a constant voltage is applied between the third terminal pair TC, and the current flowing between the third terminal pair TC is measured. The resistance between the third terminal pair TC is measured based on the voltage and current between the third terminal pair TC. The measuring device 300 outputs conduction measurement information including information related to the conduction state between the longitudinal terminal pair TL, and insulation measurement information including information related to the insulation state between the third terminal pair TC.

[0087] The power supply unit 400 is electrically connected to the probe unit 200. The power supply unit 400 supplies a direct current to the probe unit 200. The power supply unit 400 outputs a direct current of a magnitude that facilitates evaporation of the residual portion R, for example.

[0088] The control unit 500 is electrically connected to the probe unit 200, the measuring device 300, and the power supply unit 400. The control unit 500 includes a microcontroller 510. The microcontroller 510 includes an analyzing unit F13. The microcontroller 510 outputs a control signal to the probe unit 200 for switching the settings of the relay circuits 211B and 221B of the probe unit 200.

[0089] The connection relationship between the measuring device 300 and the power supply unit 400 and each terminal T selected by the control unit 500 setting the relay circuits 211B and 221B includes, for example, the following first to third connection states. In the first connection state, any one of the plurality of longitudinal terminal pairs TL is connected to the measuring device 300. The measuring device 300 measures the conduction state between the connected longitudinal terminal pairs TL. In the second connection state, any one of the plurality of third terminal pairs TC is connected to the measuring device 300. The measuring device 300 measures the insulation state between the connected third terminal pairs TC. In the third connection state, any one of the plurality of third terminal pairs TC is connected to the power supply unit 400. A DC voltage from the power supply unit 400 is applied between the third terminal pairs TC connected to the power supply unit 400. When a groove defect exists in the back electrode pair E corresponding to the third terminal pair TC connected to the power supply unit 400, a DC current flows between the third terminal pairs TC.

[0090] The control unit 500 receives the conduction measurement information and the insulation measurement information from the measuring device 300. The analysis unit F13 of the microcontroller 510 refers to the conduction measurement information and the insulation measurement information to determine a slot defect in the inspection object W. The slot defect determination process includes, for example, a conduction determination process, an insulation determination process, and a defect determination process.

[0091] The contents of the conduction determination processing are illustrated. The conduction state between the longitudinal terminal pair TL is determined based on the conduction measurement information. This includes the determination of the conduction state between the first type of terminal pair TA based on the conduction measurement information, and the determination of the conduction state between the second type of terminal pair TB. In one example, the conduction state is determined for all longitudinal terminal pairs TL. When the current between the longitudinal terminal pair TL is greater than the first reference current, or when the resistance between the longitudinal terminal pair TL is less than the first reference resistance, it is determined that there is conduction between the longitudinal terminal pair TL. When the current between the longitudinal terminal pair TL is less than the first reference current, or when the resistance between the longitudinal terminal pair TL is greater than the first reference resistance, it is determined that there is no conduction between the longitudinal terminal pair TL. Information containing the determination result on the conduction state between the longitudinal terminal pair TL is referred to as "conductivity determination information".

[0092] The storage unit of the microcontroller 510 associates and stores identification information of the vertical terminal pairs TL with conduction determination information. Unique identification information is set for each vertical terminal pair TL. When a conduction state is determined, the conduction determination information corresponding to the vertical terminal pair TL to be determined is updated.

[0093] The contents of the insulation determination processing are illustrated. The insulation state between the third type terminal pair TC is determined based on the insulation measurement information. In one example, the insulation state is determined for all third type terminal pairs TC. When the resistance between the third type terminal pair TC is greater than the second reference resistance, or when the current between the third type terminal pair TC is less than the second reference current, it is determined that the third type terminal pair TC is insulated. When the resistance between the third type terminal pair TC is less than the second reference resistance, or when the current between the third type terminal pair TC is greater than the second reference current, it is determined that the third type terminal pair TC is not insulated. Information containing the determination result regarding the insulation state between the third type terminal pair TC is referred to as "insulation determination information."

[0094] The storage unit of the microcontroller 510 associates and stores identification information of the third type terminal pair TC with insulation determination information. Each third type terminal pair TC is assigned unique identification information. When the insulation state is determined, the insulation determination information corresponding to the third type terminal pair TC is updated.

[0095] The contents of the defect determination process are exemplified. The status of the slot defect associated with the first divided slot P1 is determined based on the conductivity determination information and the insulation determination information. In one example, the status of the slot defect is determined for all first divided slots P1. The defect determination process refers to the insulation determination information of the third type terminal pair TC, the conductivity determination information of the first type terminal pair TA corresponding to the third type terminal pair TC, and the conductivity determination information of the second type terminal pair TB. If there is conductivity between the first type terminal pair TA, conductivity between the second type terminal pair TB, and no insulation between the third type terminal pair TC, a slot defect is determined to exist in the first divided slot P1 corresponding to the third type terminal pair TC. If there is conductivity between the first type terminal pair TA, conductivity between the second type terminal pair TB, and insulation between the third type terminal pair TC, a slot defect is determined to not exist in the first divided slot P1 corresponding to the third type terminal pair TC. If there is no conductivity between at least one of the first type terminal pair TA and the second type terminal pair TB, determination regarding the slot defect in the first divided slot P1 corresponding to the third type terminal pair TC is terminated. Information including the determination result regarding the groove defect is referred to as "defect determination information."

[0096] The storage unit of the microcontroller 510 associates and stores the identification information of the first divided grooves P1 with the defect determination information. Each first divided groove P1 is assigned unique identification information. When a groove defect status is determined, the defect determination information for the first divided groove P1 being determined is updated. When groove defect determination is stopped, the defect determination information for the first divided groove P1 being determined is also updated. In this case, the defect determination information includes information indicating that groove defect determination has been stopped.

[0097] The content of the determination process regarding groove defects is summarized.

[0098] The analyzing unit F13 determines that a groove defect exists in the first dividing groove P1 when the conduction measurement information confirms that there is conduction between the first type terminal pair TA and the second type terminal pair TB and the insulation measurement information confirms that there is no insulation between the third type terminal pair TC.

[0099] The analyzing unit F13 determines that there is no trench defect in the first dividing trench P1 when the conduction measurement information confirms conduction between the first type terminal pair TA and the second type terminal pair TB and the insulation measurement information confirms insulation between the third type terminal pair TC.

[0100] When confirming, based on the conduction measurement information, that there is no conduction between at least one of the first-type terminal pair TA and the second-type terminal pair TB, the analyzing unit F13 stops determining the trench defect in the first dividing trench P1.

[0101] Terminal device 600 is connected to control unit 500 via a communication device in a manner enabling wired or wireless communication with control unit 500. Control unit 500 outputs inspection information including at least one of conduction measurement information, insulation measurement information, conduction determination information, insulation determination information, and defect determination information to terminal device 600. Terminal device 600 displays information based on the inspection information on a display, for example.

[0102] Figure 15 An example of an inspection method for an inspection object W is shown.

[0103] In the first process, the probe unit 200 is set to a standby state. In one example, the first process is performed as follows. The conveying part 110 moves the probe unit 200 relative to the object to be inspected W in such a manner that the terminals T of the probe units 210 and 220 are in contact with the object to be inspected W. Each terminal T of the first probe unit 210 is in contact with the first end S1 of each unit back electrode layer 61. Each terminal T of the second probe unit 220 is in contact with the second end S2 of each unit back electrode layer 61. In the state where the first process is completed, for each of all the unit back electrode layers 61, one terminal T is in contact with the first end S1, and one terminal T is in contact with the second end S2.

[0104] In the second process, the control unit 500 performs a conduction determination process. In one example, the second process is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the first connection state, so that the measurement current flows between the longitudinal terminal pairs TL of the measurement object. When the terminal T of the first probe unit 210 and the terminal T of the second probe unit 220 included in the longitudinal terminal pair TL of the measurement object are respectively conductive with the unit back electrode layer 61, a confirmation current flows between the longitudinal terminal pairs TL of the measurement object. The control unit 500 switches the longitudinal terminal pairs TL of the measurement object in sequence. The measuring device 300 outputs conduction measurement information to the control unit 500. The control unit 500 determines the conduction state between the longitudinal terminal pairs TL based on the conduction measurement information. When the second process is completed, conduction determination information is obtained for all longitudinal terminal pairs TL.

[0105] In the case where there is a non-conductive longitudinal terminal pair TL (hereinafter referred to as "non-conductive longitudinal terminal pair TL"), the non-conductive longitudinal terminal pair TL is detected by the conduction determination process. In the non-conductive longitudinal terminal pair TL, at least one terminal T is not electrically connected to the unit back electrode layer 61. The reasons why the terminal T is not electrically connected to the unit back electrode layer 61 include, for example, at least one of the following first to third reasons. In the first reason, at least one terminal T of the longitudinal terminal pair TL is located at a position away from the unit back electrode layer 61, and the terminal T is not in contact with the unit back electrode layer 61. In the second reason, there is foreign matter on the surface of at least one terminal T of the longitudinal terminal pair TL, and the terminal T is not in contact with the unit back electrode layer 61. The foreign matter existing on the surface of the terminal T includes, for example, an oxide film formed on the surface of the terminal T, and dirt attached to the terminal T. In the third reason, at least one terminal T in the first terminal pair TA is burned out.

[0106] In the third step, the control unit 500 performs insulation determination processing. In one example, the third step is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the second connection state, so that the measuring current flows between the third terminal pairs TC of the measurement object. When the third terminal pairs TC of the measurement object are insulated, the measuring current does not flow between the third terminal pairs TC. The control unit 500 switches the third terminal pairs TC of the measurement object in sequence. The measuring device 300 outputs insulation measurement information to the control unit 500. The control unit 500 determines the insulation state between the third terminal pairs TC based on the insulation measurement information. When the third step is completed, insulation determination information is obtained for all third terminal pairs TC.

[0107] In the fourth step, the control unit 500 performs defect determination processing. In one example, the fourth step is performed as follows. The control unit 500 determines a slot defect in the first dividing slot P1 to be determined based on the continuity determination information and the insulation determination information. Upon completion of the fourth step, defect determination information is obtained for all first dividing slots P1.

[0108] In the fifth process, the control unit 500 performs a power-on process. In one example, the fifth process is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the third connection state, so that the removal current flows between the third terminal pair TC of the energized object. The removal current is a high current suitable for removing the residual portion R. The removal current is larger than the measurement current. In the case where the residual portion R exists in the first dividing groove P1 corresponding to the third terminal pair TC of the energized object, the removal current flows between the third terminal pair TC. There is a case where the residual portion R evaporates as the removal current flows. In the case where the residual portion R connecting the laterally adjacent unit back electrode layers 61 is evaporated, the adjacent unit back electrode layers 61 are insulated by the first dividing groove P1. The control unit 500 switches the third terminal pair TC of the energized object in sequence.

[0109] A back electrode pair E containing a groove defect is referred to as a "defective electrode pair." A back electrode pair E not containing a groove defect is referred to as a "normal electrode pair." The insulation resistance of a defective electrode pair is lower than the insulation resistance of a normal electrode pair. When the remaining portion R of the defective electrode pair is removed by energization, the insulation resistance of the electrode pair becomes higher. In one example, the insulation resistance of the back electrode pair E that has transitioned from a defective electrode pair to a normal electrode pair is substantially equal to the insulation resistance of the normal electrode pair that existed from the beginning.

[0110] In the sixth step, the control unit 500 performs insulation determination processing again. In one example, the sixth step is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the second connection state, so that the measurement current flows between the third type terminal pairs TC of the measurement object. The control unit 500 sequentially switches the third type terminal pairs TC of the measurement object. The measuring device 300 outputs insulation measurement information to the control unit 500. Based on the insulation measurement information, the control unit 500 determines the insulation state between the third type terminal pairs TC. When the sixth step is completed, insulation determination information is obtained for all third type terminal pairs TC.

[0111] In the seventh step, the control unit 500 performs defect determination again. In one example, the seventh step is performed as follows. The control unit 500 determines a slot defect in the first dividing slot P1 to be determined based on the continuity determination information and the insulation determination information. Upon completion of the seventh step, defect determination information is obtained for all first dividing slots P1.

[0112] The inspection method of the object W can be the same as Figure 15The inspection method of the first example does not include the fifth to seventh processes. The inspection method of the second example does not include the sixth and seventh processes. In the inspection method of the third example, in addition to the fifth process, the power-on treatment is performed after the second process is performed. In the inspection method of the fourth example, in addition to the fifth process, the power-on treatment is performed after the third process is performed. In the inspection method of the fifth example, in addition to the fifth process, the power-on treatment is performed after the sixth process is performed. In the inspection method of the sixth example, in addition to the fifth process, the power-on treatment is performed after the seventh process is performed. The inspection method of the seventh example includes at least two of the contents of the third to sixth examples. In the inspection method of the eighth example, the fifth process is omitted in any one of the inspection methods of the third to seventh examples.

[0113] The inspection method of the ninth example further includes an eighth step and a ninth step. The eighth step is performed between the second and third steps. During the conduction determination process of the second step, non-conductive longitudinal terminal pairs TL are detected. If non-conductive longitudinal terminal pairs TL exist, the insulation between adjacent cell back electrode layers 61 by the first dividing grooves P1 may not be accurately detected during the insulation determination process. If non-conductive longitudinal terminal pairs TL exist, residual portions R may not be removed during the energization process. The conduction determination information can be used to confirm whether the insulation determination process and the energization process were properly performed.

[0114] In the eighth step, the control unit 500 determines whether the number of non-conductive longitudinal terminal pairs TL is greater than the prescribed number with reference to the conductivity determination information. The prescribed number is an integer greater than 1. When the number of non-conductive longitudinal terminal pairs TL is less than the prescribed number, the third step is performed. When the number of non-conductive longitudinal terminal pairs TL is greater than the prescribed number, the ninth step is performed. In the ninth step, the control unit 500 causes a prescribed display device to output guidance information. The guidance information includes: for example, at least one of information indicating that non-conductive longitudinal terminal pairs TL are included, information guiding the resetting of the probe unit 200, and information guiding the execution of an inspection on the status of the probe unit 200. The display device includes, for example, a terminal device 600.

[0115] Furthermore, the description of the above embodiments is not intended to limit the possible forms of the solar cell inspection apparatus and the inspection apparatus according to the present invention. The solar cell inspection apparatus and the inspection apparatus according to the present invention can adopt forms different from those exemplified in the embodiments. One example is a form in which a portion of the structure of the embodiments is replaced, modified, or omitted, or a form in which a new structure is added to the embodiments.

Claims

1. A solar cell inspection device comprising: a measuring unit that measures a conduction state between a first type of terminal pair in contact with a first unit back electrode layer adjacent to a first side portion of the dividing groove, a conduction state between a second type of terminal pair in contact with a second unit back electrode layer adjacent to a second side portion of the dividing groove, and an insulation state between a third type of terminal pair including one terminal of the first type of terminal pair and one terminal of the second type of terminal pair; and An analyzing unit determines a defect of the dividing groove by referring to the conductive state and the insulating state measured by the measuring unit.

2. The solar cell inspection device according to claim 1, wherein: The analyzing unit determines that a defect exists in the dividing groove when it is confirmed that there is conduction between the first-type terminal pairs and between the second-type terminal pairs and that there is no insulation between the third-type terminal pairs.

3. The solar cell inspection device according to claim 1 or 2, characterized in that: The analyzing unit determines that there is no defect in the dividing groove when it is confirmed that there is conduction between the first-type terminal pairs and between the second-type terminal pairs, and when it is confirmed that there is insulation between the third-type terminal pairs.

4. The solar cell inspection device according to claim 1 or 2, characterized in that: The analyzing unit stops determining whether the dividing groove has a defect when confirming that there is no conduction between at least one of the first-type terminal pair and the second-type terminal pair.

5. The solar cell inspection device according to claim 1 or 2, characterized in that: A removal portion is further provided, and the removal portion allows current to flow between the third type terminal pair.

6. The solar cell inspection device according to claim 1 or 2, characterized in that: It also includes the first terminal pair, the second terminal pair, and the third terminal pair, The first terminal pair is configured to contact the ends of the first unit back electrode layer. The second terminal pair is configured to contact the respective ends of the second unit back electrode layer. The third terminal pair includes one terminal of the first terminal pair and one terminal of the second terminal pair, The distance between the terminals of the third terminal pair in the longitudinal direction of the dividing groove is equal to the distance between the terminals of the first terminal pair or the distance between the terminals of the second terminal pair in the longitudinal direction of the dividing groove.

7. A method for inspecting a solar cell, comprising detecting defects in a dividing groove that divides a back electrode layer into a plurality of unit back electrode layers, comprising: a conduction determination processing step of measuring a conduction state between a first terminal pair contacting a first unit back electrode layer adjacent to a first side portion of the dividing groove and a conduction state between a second terminal pair contacting a second unit back electrode layer adjacent to a second side portion of the dividing groove; A first insulation determination processing step of measuring the insulation state between a third terminal pair including one terminal of the first terminal pair and one terminal of the second terminal pair; as well as The defect determination process determines a defect of the dividing groove by referring to the measured conduction state and the insulation state.

8. The method for inspecting a solar cell according to claim 7, wherein: Also includes: The energizing processing step is to flow a current between the third type terminal pair after executing the first insulation determination processing step.

9. The method for inspecting a solar cell according to claim 8, wherein: Also includes: The second insulation determination processing step measures the insulation state between the third type terminal pair after executing the energization processing step.

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