Substrate transfer device and substrate transfer system using the same

Abstract

The present disclosure provides a substrate transfer device and a substrate transfer system using the substrate transfer device. The substrate transfer device includes: a main body including a first surface to which a semiconductor substrate is adsorbed and a second surface opposite to the first surface, the first surface including a cavity provided in a central region of the main body, and an attachment unit provided on an edge of the main body so as to surround the cavity and form a negative pressure to adsorb the semiconductor substrate; and a connector connected to the second surface of the main body and supporting the main body, wherein the cavity includes a lower surface having at least one through hole that penetrates the first surface and the second surface of the main body and connects the cavity to an external space, and the cavity includes a side surface inclined at an angle of 2.9° to 5° with respect to the first surface at an edge of the main body.

Description

Technical Field

[0001] The present disclosure relates to a substrate transfer device and a substrate transfer system using the substrate transfer device. Background Art

[0002] Due to the thin and compact size of semiconductor chips, there is a continuous need for thin semiconductor substrates for manufacturing semiconductor chips. To this end, a back grinding process is performed to thin the semiconductor substrate. However, during the process of transferring the ground semiconductor substrate, the contact surface of the substrate transfer device for transferring the semiconductor substrate may be contaminated by particles attached to the semiconductor substrate. The particles attached to the substrate transfer device may damage other semiconductor substrates being transferred and may also damage the semiconductor chips formed on the semiconductor substrate. Therefore, research has been actively conducted to prevent damage to other semiconductor substrates and semiconductor chips even when particles are attached to the semiconductor substrate. Summary of the Invention

[0003] One aspect of the present disclosure provides a substrate transfer device for reducing damage to a semiconductor substrate during adsorption and transfer of the semiconductor substrate, and a substrate transfer system using the substrate transfer device.

[0004] According to one aspect of the present disclosure, a substrate transfer device includes: a main body including a first surface to which a semiconductor substrate is adsorbed and a second surface opposite to the first surface, the first surface including a cavity provided in a central region of the main body and an attachment unit provided on an edge of the main body to surround the cavity and form a negative pressure to adsorb the semiconductor substrate; and a connector connected to the second surface of the main body and supporting the main body, wherein the cavity includes a lower surface having at least one through hole that penetrates the first surface and the second surface of the main body and connects the cavity to an external space, and the cavity includes a side surface inclined at an angle of 2.9° to 5° with respect to the first surface at an edge of the main body.

[0005] According to one aspect of the present disclosure, a substrate transfer device includes: a main body including a first surface and a second surface opposite to the first surface, a semiconductor substrate being configured to be adsorbed to the first surface, the first surface including a cavity provided in a central region of the main body and an attachment unit provided on an edge of the main body to surround the cavity and form a negative pressure to adsorb the semiconductor substrate, wherein the cavity includes a lower surface, and at least one through hole penetrates the first surface and the second surface and fluidly connects the cavity to an external space, and the cavity includes a side surface having a height difference of 0.5 mm to 1 mm with respect to the first surface at an edge of the main body.

[0006] According to one aspect of the present disclosure, a substrate transfer system includes: a chuck table configured to perform a grinding process on a semiconductor substrate disposed on an upper surface of the chuck table; and a substrate transfer device disposed above the semiconductor substrate and configured to attach to the semiconductor substrate on which the grinding process has been performed, wherein the substrate transfer device includes: a main body including a first surface and a second surface opposite to the first surface, the semiconductor substrate being configured to attach to the first surface, the first surface having a cavity disposed in a central region of the main body and an attachment unit disposed on an edge of the main body so as to surround the cavity and form a negative pressure to attach to the semiconductor substrate; and a connector configured to connect to the second surface of the main body and support the main body, wherein the cavity includes a lower surface having at least one through hole that penetrates the first surface and the second surface and connects the cavity to an external space, and the cavity includes a side surface inclined at an angle of 2.9° to 5° with respect to the first surface at an edge of the main body. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The above and other aspects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0008] Figure 1 is a perspective view schematically showing a substrate transfer system according to an exemplary embodiment of the present disclosure;

[0009] Figure 2 is a side cross-sectional view taken along line I-I' of Figure 1 ;

[0010] Figure 3 and Figure 4 are diagrams showing various exemplary embodiments of the inclined surface of Figure 2 ;

[0011] Figure 5 is a plan view viewed from direction II of Figure 2 ;

[0012] Figure 6 is a plan view with a suction plate removed from Figure 5 ;

[0013] Figure 7 and Figure 8 are diagrams showing different exemplary embodiments of through holes formed on the lower surface of Figure 5 ;

[0014] Figure 9 is a diagram showing the effect of removing negative pressure according to an exemplary embodiment; and

[0015] Figure 10 is a diagram showing a comparative example in which no through hole is formed. Detailed Implementation Modes

[0016] In the following, exemplary implementation modes of the present disclosure will be described with reference to the accompanying drawings.

[0017] With reference to Figure 1 and Figure 2 , a substrate transfer device according to an exemplary implementation mode will be described. Figure 1 FIG. is a perspective view schematically showing a substrate transfer system according to an exemplary implementation mode of the present disclosure, Figure 2 andFIG. is a side cross-sectional view taken along line I-I' of Figure 1 .

[0018] Based on Figure 1 and Figure 2 , a substrate transfer system 1 according to an exemplary implementation mode may include a chuck table CT on which a semiconductor substrate W can be placed and a substrate transfer device 10 for adsorbing or attaching the semiconductor substrate W placed on the chuck table CT. The substrate transfer system 1 can be applied to a back grinding device for thinning or reducing the thickness of the semiconductor substrate W and can be disposed in a processing chamber of the back grinding device.

[0019] On the upper surface of the chuck table CT, a processed semiconductor substrate W can be placed. The semiconductor substrate W can be a circular wafer. A semiconductor layer Wa can be formed on one surface of the semiconductor substrate W, and can be disposed on the lower surface W1 of the semiconductor substrate W to face the chuck table CT. Thus, the upper surface W2 of the semiconductor substrate W can be disposed on the chuck table to face up or away from the chuck table CT, and the lower surface W1 can be disposed to face the chuck table CT. The substrate transfer device 10 can adsorb the upper surface W2 of the semiconductor substrate W. The semiconductor substrate W can be adsorbed to the chuck table CT by vacuum for a process. In an exemplary implementation mode, the process can be a process of grinding the upper surface of the semiconductor substrate W. After the back grinding process, air can be ejected onto the adsorbed semiconductor substrate W to separate the chuck table CT from the semiconductor substrate W. The substrate transfer device 10 can transfer the separated semiconductor substrate W by vacuum or suction.

[0020] A plurality of semiconductor dies can be formed on the semiconductor layer Wa. When viewed from the top, known good dies that have been confirmed to operate properly can be disposed in the central region of the semiconductor layer Wa, and dummy dies can be disposed in the edge region of the semiconductor layer Wa. In an exemplary implementation mode, the semiconductor substrate W can be a semiconductor wafer with a diameter of 304 mm to 307 mm and can have a thickness of 30 μm to 50 μm after the back grinding process.

[0021] A process of polishing the upper surface W2 of the semiconductor substrate W can be performed on the chuck table CT. During this process, particles P (a polishing by-product) may adhere to the upper surface W2 of the semiconductor substrate W. When the substrate transfer device 10 adsorbs the semiconductor substrate W, the particles P may cause defects or cracks in or on the semiconductor substrate W. In addition, the semiconductor layer formed on the semiconductor substrate W may be damaged due to the defects or cracks of the semiconductor substrate W, resulting in defective semiconductor chips. The particles P may contaminate the portion where the substrate transfer device 10 meets the semiconductor substrate W, and may thus cause defects in another semiconductor substrate W subsequently transferred, or cause cracks in the semiconductor layer. Even when the particles P adhere to the semiconductor substrate W, the substrate transfer system of an exemplary embodiment can reduce cracks in the semiconductor substrate or reduce damage to the semiconductor chip. This will be described below.

[0022] The substrate transfer device 10 may include a main body 100 for adsorbing the semiconductor substrate W and a connector 200 supporting the main body 100.

[0023] The main body 100 may have a first surface 111 in contact with the semiconductor substrate W and a second surface 112 opposite to the first surface 111, and may be formed of a circular base 110. The shape of the main body 100 is not limited to circular, and may be polygonal, such as quadrilateral, etc. The base 110 may be formed of a ceramic material. The base 110 may be formed thick enough to form a cavity 120 at or on its first surface 111.

[0024] Based on Figure 2 , the first surface 111 of the main body 100 is the surface to which the semiconductor substrate W is adsorbed, and may have a contact area CA in direct contact with the semiconductor substrate W and a non-contact area NCA not in direct contact with the semiconductor substrate W. The non-contact area NCA may be provided in the central area of the first surface 111, while the contact area CA may be provided on the edge or edge area of the first surface 111 to surround the non-contact area NCA. The contact area CA may be set to correspond to the area where the dummy die of the semiconductor substrate W is provided. Therefore, since the contact area CA is limitedly provided in the area corresponding to the dummy die on the semiconductor substrate W, even when the particles P adhere to the contact area CA, the known good die can be prevented from being damaged.

[0025] Based on Figure 3 , an attachment unit or attachment system 130 for forming a negative pressure to adsorb the semiconductor substrate W may be provided in the contact area CA. The attachment unit 130 is configured to suck air through a suction plate 132 to form a negative pressure in the surrounding area.

[0026] The attachment unit 130 may include a groove 131 provided at an edge of the first surface 111, an exhaust hole or an exhaust passage 133, and a suction plate 132 inserted into the groove 131. The groove may be formed at a predetermined depth in the contact area CA, and the exhaust hole 133 may be provided at or on the lower surface of the groove 131. The exhaust hole 133 may be formed to connect the lower surface of the groove 131 and the second surface 112 of the main body 100. As Figure 6 shown, the exhaust holes 133 may be provided on the lower surface of the groove 131 in the circumferential direction; however, the arrangement of the exhaust holes 133 is not limited to Figure 6 the arrangement shown therein, but various modifications may be made.

[0027] As Figure 2 shown, the exhaust holes 133 may be connected to a vacuum source 300 via connection holes or connection channels 230 of the connector 200. The suction plate 132 formed of a porous material is inserted into the groove 131, and thus can suck air while providing sufficient support for attaching the semiconductor substrate. In an exemplary embodiment, the suction plate 132 may be formed of a porous ceramic material.

[0028] Since the cavity 120 is provided in the non-contact area NCA, even when particles P adhere to the semiconductor substrate W, direct contact between the main body 100 and the particles P can be prevented by the cavity.

[0029] As Figure 3 shown, the cavity 120 may be provided in the central region of the main body 100, and may have a height difference D from the edge region or the contact area CA of the main body 100 such that the particles P attached to the surface of the adsorbed semiconductor substrate W do not reach the central region or the non-contact area NCA of the main body 100. In an exemplary embodiment, the cavity 120 may be formed to have a height difference D of 0.5 mm to 1 mm. When the height difference D of the cavity 120 is less than 0.5 mm, the height difference D of the cavity 120 may be less than the average size of the particles P generated during the grinding of the semiconductor substrate W, resulting in the particles P adhering to the lower surface 121 of the cavity 120. In contrast, when the height difference D of the cavity 120 exceeds 1 mm, the height difference D of the cavity 120 is greatly increased compared to the thickness of the ground semiconductor substrate W, thereby reducing the effect of preventing deformation of the semiconductor substrate W caused by the air pressure during the separation of the semiconductor substrate W from the chuck table CT.

[0030] The lower surface 121 of the cavity 120 may be formed flat, but is not limited thereto; according to an exemplary embodiment, the lower surface 121 may be formed as a curved surface.

[0031] Based on Figure 2 and Figure 5, one or more through - holes 123 may be provided at or on the lower surface 121 of the cavity 120. Since the through - holes 123 are formed to penetrate the lower surface 121 of the cavity 120 and the second surface 112 of the main body 100, even when the semiconductor substrate W is adsorbed to the first surface 111 of the main body 100, air can flow into the cavity 120 through the through - holes 123. Therefore, by maintaining the internal air pressure of the cavity equal to the air pressure inside the process chamber, it is possible to prevent the cavity 120 from being in a negative pressure state.

[0032] This will be described with reference to Figure 9 and Figure 10 which will be described. Figure 9 is a diagram showing the effect of removing negative pressure according to an exemplary embodiment, Figure 10 is a diagram showing a comparative example in which through - holes are not formed.

[0033] Based on Figure 10 , the attaching unit 3130 sucks in the nearby air and discharges it into the exhaust hole 3133 (F3). Since air is also sucked in from the cavity 3120 during this process, the air pressure inside the cavity 3120 is in a lower negative pressure state compared to the outside. The semiconductor substrate W that has been back - ground - polished is very thin and is vulnerable to external pressure. When such a semiconductor substrate W is attached to the main body 100, due to the negative pressure of the cavity 3120, the central region of the semiconductor substrate W may be deformed and recessed in the direction DT toward the lower surface 3121 of the cavity 3120. Such deformation may generate cracks CR in the semiconductor substrate W or damage the semiconductor chips formed on the semiconductor layer Wa. In addition, when the semiconductor substrate W becomes recessed, the distance between the particles P attached to the semiconductor substrate W and the lower surface 3121 of the cavity 3120 decreases, resulting in contamination of the lower surface 3121 of the cavity 3120 by the particles P.

[0034] In contrast, as Figure 9 shown, in an exemplary embodiment, the attaching unit 130 sucks in the nearby air and discharges it into the exhaust hole 133 (F1), and external air can flow in through the through - holes 123 (F2). Therefore, it is possible to prevent the cavity 120 from being in a negative pressure state and to prevent damage to the semiconductor substrate W and the semiconductor chips of the semiconductor layer Wa.

[0035] The through - holes 123 may be formed in a circular shape, and at least one may be provided at or on the lower surface 121 of the cavity 120. In addition, as Figure 5 shown, a plurality of through - holes 123 may be provided on the lower surface 121 of the cavity 120. In an exemplary embodiment, the plurality of through - holes 123 may be radially provided with respect to the center C of the lower surface 121. Additionally, according to the exemplary embodiment, the plurality of through - holes 123 may have the same size, but may have different shapes.Figure 7 An exemplary embodiment is shown, in which, when the through hole 1123 is formed of a plurality of through holes 1123a to 1123c, the plurality of through holes 1123a to 1123c have an increasing size in the direction from the center to the edge of the cavity 120, that is, the case where the size of the through hole 1123 increases in the direction from the center of the cavity 120 toward the edge. Therefore, the size of the through hole 1123c provided on the edge of the cavity 1121 can be relatively larger than the sizes of the through holes 1123a and 1123b formed in other regions. Thereby, this enables the air pressurized against the side surface 1122 of the cavity during the separation of the chuck table CT and the semiconductor substrate W by air injection to be rapidly discharged through the through hole 1123c. Therefore, it is possible to prevent the semiconductor substrate W from being damaged when separated from the chuck table CT.

[0036] Meanwhile, according to Figure 8 the exemplary embodiment shown, one or more protrusions 2124 for supporting the semiconductor substrate can be further provided on the lower surface 2121 of the cavity 2120 of the main body 2100. The protrusions 2124 are provided between the plurality of through holes 2123 and can support the semiconductor substrate to effectively prevent it from being recessed and bent toward the lower surface of the cavity when the semiconductor substrate is separated from the chuck table by air injection pressure.

[0037] As Figure 3 shown, the side surface 122 of the cavity 120 can be formed of an inclined surface of a curved surface. The side surface 122, while being inclined from the contact area CA of the attachment unit 130 or the main body 100 toward the lower surface 121 of the cavity 120, can be formed to have a convex curved surface. Therefore, the side surface 122 of the cavity 120 can be arranged such that when the semiconductor substrate W is attached thereto, the angle θ1 of the contact point PT1 in contact with the semiconductor substrate W falls within a predetermined range. In an exemplary embodiment, the predetermined range can be 2.9° to 5°. The contact point PTI can be at the intersection of the contact area CA and the non-contact area NCA of the main body 100. The angle θ1 of the contact point PT1 can be the angle of the tangent line at the contact point PT1 with respect to the first surface 111 of the main body 100 in contact with the semiconductor substrate W.

[0038] When the semiconductor substrate W is separated from the chuck table CT by air injection, the contact area CA of the semiconductor substrate W is attached and fixed to the attachment unit 130. In contrast, the non-contact area NCA is not fixed and thus can be bent toward the lower surface 121 of the cavity 120. Therefore, cracks may occur at the contact point PT1 at the boundary between the area attached to the attachment unit 130 and the area not attached to the attachment unit 130. In an exemplary embodiment, by arranging the angle of the contact point PT1 to be as small as 2.9° to 5°, cracks in the semiconductor substrate W can be prevented.

[0039] In addition, the side surface 122 of the cavity 120 may be formed by a plurality of curved surfaces. For example, as Figure 4 shown, the side surface 122 may be formed by a first curved surface 122a and a second curved surface 122b. The first curved surface 122a and the second curved surface 122b may be curved surfaces with different radii of curvature. The second curved surface 122b may be formed to have a radius of curvature that gradually increases toward the lower surface 121 of the cavity 120. In addition, the minimum value of the radius of curvature of the second curved surface 122b may be greater than the radius of curvature of the first curved surface 122a. Therefore, the second curved surface 122b may have a gentle curved surface relative to the first curved surface 122a while maintaining the angle of the contact point PT2 of the first curved surface 122a in contact with the semiconductor substrate W within a predetermined range. In one exemplary embodiment, when the height difference D of the cavity 120 is 1 mm, the first curved surface 122a may be formed to bulge with a radius of curvature of 0.5 mm, so that the angle θ2 of the point in contact with the semiconductor substrate W is in the range of 2.9° to 5°. The second curved surface 122b is formed to be concave to have a radius of curvature greater than 0.5 mm, so as to smoothly connect to the lower surface 121 and the cavity 120.

[0040] An exemplary embodiment in which the first curved surface 122a and the second curved surface 122b are formed on the side surface 122, a comparative example 1 in which the side surface is formed as a vertical surface, and a comparative example 2 in which a curved surface is formed but only the first curved surface is formed are compared in terms of the stress on the semiconductor chip, and the results are shown in Table 1 below. When compared with Comparative Examples 1 and 2, the exemplary embodiment shows a reduction in chip stress of 82% and 81% respectively. In this regard, it can be understood that the effect of preventing damage to the semiconductor chip is enhanced.

[0041]

Table 1

[0042] Comparative Example 1 Comparative Example 2 Exemplary Embodiment Chip Stress (MPa) 117.9 109.4 20.6

[0043] The connector 200 may be attached to the second surface 112 of the main body 100. The connector 200 connects the main body 100 to a transfer mechanism such as a robotic arm, so that the main body 100 sucks the semiconductor substrate W and separates it from the chuck table CT to transfer the semiconductor substrate W. The connector 200 may include a main body connector 210 attached to or connected to the second surface 112 of the main body 100 and a robotic arm connector 220 connected to the robotic arm. A connection hole 230 is formed inside the main body connector 210 and the robotic arm connector 220 to connect the exhaust hole 133 and the vacuum source 300.

[0044] The connector 200 transfers the main body 100 to above the chuck table CT such that the attachment unit 130 of the main body 100 is set to correspond to the region in which the dummy die in which the semiconductor substrate W is disposed is located. The connector 200 also lowers the main body 100 such that the attachment unit 130 is restricted to suck the region in which the dummy die is disposed.

[0045] As described above, according to the exemplary embodiment, the substrate transfer device and the substrate transfer system using the same can reduce damage to the semiconductor substrate.

[0046] Various advantages and beneficial effects of the present disclosure are not limited to the above description and can be easily understood during the description of the specific embodiments of the present disclosure.

[0047] Although the exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the scope of the present disclosure defined by the appended claims.

[0048] This application claims the priority of Korean Patent Application No. 10-2019-0176980, filed with the Korean Intellectual Property Office on December 27, 2019, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A substrate transfer device, comprising: A main body, including a first surface to which a semiconductor substrate is adsorbed and a second surface opposite to the first surface, the first surface including a cavity provided in a central region of the main body, and an attachment unit provided on an edge of the main body so as to surround the cavity and form a negative pressure to adsorb the semiconductor substrate; And A connector, connected to the second surface of the main body and supporting the main body, Wherein, the cavity includes a lower surface having at least one through hole, the through hole penetrating the first surface and the second surface of the main body and connecting the cavity to an external space, and the cavity includes a side surface inclined at an angle of 2.9° to 5° with respect to the first surface at an edge of the main body, Wherein, the connector is attached to the second surface of the main body at a region corresponding to the attachment unit, and a separation space is defined between the connector and the second surface of the main body at a region corresponding to the cavity.

2. The substrate transfer device according to claim 1, wherein, The side surface includes a curved surface, Wherein, the curved surface includes a first curved surface adjacent to the attachment unit and a second curved surface provided between the first curved surface and the lower surface, Wherein, the first curved surface and the second curved surface have different radii of curvature.

3. The substrate transfer device according to claim 2, wherein, The second curved surface has a radius of curvature that gradually increases toward the lower surface.

4. The substrate transfer device according to claim 3, wherein, The minimum value of the radius of curvature of the second curved surface is greater than the radius of curvature of the first curved surface.

5. The substrate transfer device according to claim 1, wherein, The attachment unit includes: An annular groove provided on the edge of the main body to surround the cavity; An exhaust hole provided on a lower surface of the groove and penetrating the lower surface of the groove and the second surface of the main body; and A suction plate filling the groove.

6. The substrate transfer device according to claim 5, wherein, The suction plate is formed of a porous ceramic material.

7. The substrate transfer device according to claim 1, wherein, The through hole includes a plurality of through holes, Wherein, the plurality of through holes are arranged radially outward from the center of the central region of the main body.

8. The substrate transfer device according to claim 1, wherein, The through hole includes a plurality of through holes, Wherein, the plurality of through holes have diameters that sequentially increase in a radially outward direction from the central region of the main body to the edge of the main body.

9. The substrate transfer device according to claim 1, wherein, The cavity has a height difference of 0.5 mm to 1 mm with respect to the first surface at an edge of the main body.

10. The substrate transfer device according to claim 1, wherein, The semiconductor substrate has one surface on which a plurality of semiconductor chips are provided, Wherein, the plurality of semiconductor chips include known good dies and dummy dies, Wherein, the known good dies are provided in a central region of the semiconductor substrate, and the dummy dies are provided in an edge region of the semiconductor substrate.

11. The substrate transfer device according to claim 10, wherein, The attachment unit is adsorbed to the edge region of the semiconductor substrate to correspond to the region in which the dummy dies are provided.

12. A substrate transfer device, comprising: A main body, including a first surface and a second surface opposite to the first surface, a semiconductor substrate is configured to be adsorbed to the first surface, the first surface includes a cavity provided in a central region of the main body, and an attachment unit, the attachment unit is provided on an edge of the main body so as to surround the cavity and form a negative pressure to adsorb the semiconductor substrate. Wherein the cavity includes a lower surface, and at least one through hole penetrates the first surface and the second surface of the main body and fluidly connects the cavity to an external space, the cavity includes a side surface having a height difference of 0.5 mm to 1 mm relative to the first surface at the edge of the main body. Wherein, the side surface includes a curved surface. Wherein, the curved surface includes a first curved surface adjacent to the attachment unit and a second curved surface provided between the first curved surface and the lower surface. Wherein, the first curved surface and the second curved surface have different radii of curvature.

13. The substrate transfer device according to claim 12, further comprising a connector configured to be connected to the second surface of the main body and support the main body. Among them, The connector includes a connection hole penetrating through its interior.

14. The substrate transfer device according to claim 13, wherein, The attachment unit includes: An annular groove provided on the edge of the main body to surround the cavity; An exhaust hole penetrating the lower surface of the groove and the second surface of the main body; and A suction plate filling the groove. Wherein, the exhaust hole is connected to the connection hole of the connector.

15. The substrate transfer device according to claim 12, wherein, The first curved surface is a first convex surface, and the second curved surface is a second concave surface.

16. A substrate transfer system, comprising: A chuck table for performing a grinding process on a semiconductor substrate placed on an upper surface of the chuck table; And A substrate transfer device provided above the semiconductor substrate and configured to be attached to the semiconductor substrate on which the grinding process has been performed. Wherein, the substrate transfer device includes: A main body, including a first surface and a second surface opposite to the first surface, the semiconductor substrate is configured to be attached to the first surface, the first surface has a cavity provided in a central region of the main body, and an attachment unit, the attachment unit is provided on an edge of the main body so as to surround the cavity and form a negative pressure to attach to the semiconductor substrate; and A connector configured to be connected to the second surface of the main body and support the main body. Wherein, the cavity includes a lower surface having at least one through hole, the through hole penetrates the first surface and the second surface and connects the cavity to an external space, and the cavity includes a side surface inclined at an angle of 2.9° to 5° relative to the first surface at the edge of the main body. Wherein, the attachment unit includes: An annular groove provided on the edge of the main body to surround the cavity; An exhaust hole provided on the lower surface of the groove and penetrating the lower surface of the groove and the second surface of the main body; and A suction plate filling the groove.

17. The substrate transfer system according to claim 16, wherein, The semiconductor substrate is configured to be separated from the chuck table by air injection of the chuck table and attached to the attachment unit.

18. The substrate transfer system according to claim 16, wherein, The semiconductor substrate includes a surface on which a plurality of semiconductor chips are disposed, and the surface is configured to face the chuck table. Among them, the plurality of semiconductor chips include known good dies and dummy dies. Among them, the known good dies are disposed in a central region of the semiconductor substrate, and the dummy dies are disposed in an edge region of the semiconductor substrate.

19. The substrate transfer system according to claim 18, wherein, The attachment unit is configured to correspond to the edge region of the semiconductor substrate in which the dummy dies are disposed, and the cavity is configured to correspond to the central region of the semiconductor substrate in which the known good dies are disposed.

Images