A cap structure of GaN microwave power device based on LCP

Abstract

The present invention discloses a cap structure of a GaN microwave power device based on LCP, and relates to the technical field of microwave power devices. A cap structure of a GaN microwave power device based on LCP, comprising a substrate, a fixing mechanism fixedly connected to the top of the substrate, the fixing mechanism comprising a fixing frame, a cover plate fixedly connected to the inside of the fixing frame, a fixing block fixedly connected to the top of the cover plate, a second oblique block fixedly connected to the outside of the cover plate, a first oblique block fixedly connected to the inside of the fixing frame, and the second oblique block and the first oblique block are adapted, a groove is provided inside the fixing frame, and a limiting block is fixedly connected inside the groove. The present invention realizes the coordination of the fixing frame, the cover plate and the rubber pad through the arrangement of the fixing frame, the cover plate and the rubber pad, so that the cap can be fixed and sealed without the use of a stamping device, thereby avoiding the safety hazard of working under the stamping device.

Description

Technical Field

[0001] The invention relates to the technical field of microwave power devices, and in particular to a tube cap structure of a GaN microwave power device based on LCP. Background Art

[0002] Gallium nitride is a third-generation semiconductor material with a hexagonal wurtzite structure. It is one of the most interesting semiconductor materials in the world today. Devices have been used in light-emitting diodes since 1990, opening the door to its commercialization. As a wide-bandgap semiconductor, gallium nitride has the characteristics of large bandgap width, high breakdown field strength, high saturated electron migration rate, large thermal conductivity, small dielectric constant, and strong radiation resistance. It is suitable for the production of high-frequency, high-power, high-density integration and radiation-resistant electronic devices. It is widely used in power electronics fields such as smart grids and high-speed rail transit, as well as microwave radio frequency such as 5G base stations and radars. In the field of electronic devices, gallium nitride is more suitable for high-frequency, high-power, and low-voltage applications. In radio frequency applications, gallium nitride has a higher electron saturation drift velocity and a larger bandgap width, and lower conduction losses, making it suitable for high-power and high-frequency radio frequency applications.

[0003] When using gallium nitride to make microwave power devices, ceramic materials are often used as the tube cap structure. Ceramic materials are particularly expensive, so a low-cost LCP material is proposed as the tube cap structure of GaN microwave power devices. However, how to design the tube cap structure of the LCP material and how to handle the heat dissipation structure have become difficult problems for technicians in this industry. Summary of the invention

[0004] The object of the present invention is to provide a cap structure of a GaN microwave power device based on LCP to solve the problems raised in the above background technology.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solution: a tube cap structure of a GaN microwave power device based on LCP, comprising a substrate, a fixing mechanism fixedly connected to the top of the substrate, the fixing mechanism comprising a fixing frame, a cover plate fixedly connected to the inside of the fixing frame, a fixing block fixedly connected to the top of the cover plate, a second oblique block fixedly connected to the outer side of the cover plate, a first oblique block fixedly connected to the inside of the fixing frame, and the second oblique block and the first oblique block are adapted to each other.

[0006] Preferably, a groove is provided inside the fixed frame, a limiting block is fixedly connected inside the groove, a sliding groove is provided inside the limiting block, a sliding bar is slidably connected inside the sliding groove, and one side of the sliding bar is fixedly connected to the cover plate, a rubber pad is fixedly connected to the bottom of the groove, and the rubber pad and the cover plate are adapted to each other.

[0007] Preferably, a heat sink is fixedly connected to the top of the fixing block, and a support plate is fixedly connected to the outer side of the fixing block and the fixing frame.

[0008] Preferably, the top of the support plate is fixedly connected with a bolt, the outer side of the bolt is threaded with a nut, the outer side of the bolt is fixedly connected with an external thread, the inside of the nut is provided with an internal thread, and the external thread and the internal thread are adapted to each other.

[0009] Preferably, pins are fixedly connected to the outer side of the fixing frame, and the pins are fixedly connected to the substrate.

[0010] Preferably, the heat sink is made of aluminum.

[0011] Compared with the prior art, the present invention has the following beneficial effects:

[0012] (1) The cap structure of the GaN microwave power device based on LCP can be realized by the arrangement of a fixing frame, a cover plate and a rubber pad, so that the assembly operation process is simple, and the cost of LCP material is lower than that of ceramic material.

[0013] (2) The cap structure of the GaN microwave power device based on LCP realizes the control of the temperature of the GaN microwave power device during operation by setting a fixing block and a heat sink, thereby improving the stability of the microwave power device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the isometric structure of the present invention;

[0015] Figure 2 It is a schematic diagram of a partial cross-sectional view of the fixing frame of the present invention;

[0016] Figure 3 It is a schematic diagram of the main cross-sectional view structure of the present invention;

[0017] Figure 4 For the present invention Figure 3 A partial enlarged diagram of the structure of part A;

[0018] Figure 5 It is a schematic structural diagram of a local enlarged view of the limit block of the present invention.

[0019] In the figure: 1, base plate; 2, fixing mechanism; 201, fixing frame; 202, pin; 203, fixing block; 204, heat sink; 205, groove; 206, rubber pad; 207, cover plate; 208, bolt; 209, support plate; 210, first inclined block; 211, nut; 212, limit block; 213, sliding bar; 214, second inclined block; 215, sliding groove. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] It should be noted that, in the description of the present invention, the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present invention.

[0022] Furthermore, it should be understood that for the sake of ease of description, the sizes of the various components shown in the drawings are not drawn according to actual proportions. For example, the thickness or width of certain layers may be exaggerated relative to other layers.

[0023] It should be noted that like reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined or described in one drawing, it will not require further detailed discussion and description in the description of the subsequent drawings.

[0024] like Figure 1-5As shown, the present invention provides a technical solution: a cap structure of a GaN microwave power device based on LCP, comprising a substrate 1, wherein the LCP material has self-reinforcement and has an unusually regular fibrous structure, so that the unreinforced liquid crystal plastic can reach or even exceed the mechanical strength and modulus of ordinary engineering plastics reinforced with several tens of percent glass fiber, and also has excellent thermal stability, heat resistance and chemical resistance. The creep characteristics of most plastics can be ignored by the liquid crystal material, and the wear resistance and friction reduction are excellent, the weather resistance and radiation resistance are good, and the flame retardancy is excellent, and the flame can be extinguished without continuing to burn. Burning, has excellent electrical insulation properties, its dielectric strength is higher than that of general engineering plastics, it has good arc resistance, outstanding corrosion resistance, and will not be dissolved or cause stress cracking after contact with industrial solvents, fuel oil, detergents and hot water. GaN is an ideal semiconductor material in the 5G era because it has the advantages of high efficiency, high power, high thermal conductivity and large bandwidth, which is very suitable for 5G applications. GaN adapts to the high frequency requirements of 5G. The top of the substrate 1 is fixedly connected with a fixing mechanism 2, and the fixing mechanism 2 includes a fixing frame 201, and a groove 205 is opened inside the fixing frame 201. The groove 205 is fixedly connected with a limited block 2 12. A sliding groove 215 is provided inside the limit block 212. A sliding bar 213 is slidably connected inside the sliding groove 215. One side of the sliding bar 213 is fixedly connected to the cover plate 207. The sliding groove 215 and the sliding bar 213 cooperate to control the downward movement direction. A rubber pad 206 is fixedly connected to the bottom of the groove 205. The rubber pad 206 is adapted to the cover plate 207. The cover plate 207 is fixedly connected to the inside of the fixed frame 201. The top of the cover plate 207 is fixedly connected to the fixed block 203. The top of the fixed block 203 is fixedly connected to the heat sink 204. The heat sink 204 is made of aluminum and has good thermal conductivity. The fixed block 203 and the fixed frame 201 The outer side is fixedly connected with a support plate 209, the top of the support plate 209 is fixedly connected with a bolt 208, the outer side of the bolt 208 is threaded with a nut 211, the outer side of the bolt 208 is fixedly connected with an external thread, the nut 211 is provided with an internal thread, and the external thread and the internal thread are adapted to each other, the outer side of the cover plate 207 is fixedly connected with a second bevel block 214, the inner side of the fixed frame 201 is fixedly connected with a first bevel block 210, and the second bevel block 214 is adapted to the first bevel block 210, the outer side of the fixed frame 201 is fixedly connected with a pin 202, and the pin 202 is fixedly connected to the substrate 1, so that the GaN chip and the control chip are connected to achieve interaction.

[0025] When manufacturing the device, first fix the GaN microwave chip on the top of the substrate 1, then fix the fixing frame 201 on the outside of the GaN microwave chip, and use the pins 202 to connect the GaN microwave chip and the substrate 1, then put the cover plate 207 into the groove 205, and make the sliding bar 213 and the sliding groove 215 inside the limiting block 212 cooperate to limit, and then press the top of the cover plate 207 downward, so that the cover plate 207 moves downward along the sliding groove 215, and then the first inclined block 210 squeezes The second inclined block 214 is pressed to deform the cover plate 207 and shrink inward, and then the pressure is continued to move the second inclined block 214 to the bottom of the first inclined block 210, and the cover plate 207 is restored, so that the first inclined block 210 and the second inclined block 214 are fixed, and at the same time the first inclined block 210 presses the cover plate 207 downward so that the bottom of the cover plate 207 is fully in contact with the rubber pad 206 to ensure sealing, and then the fixing block 203 is installed on the top of the cover plate 207 by bolts 208 and nuts 211, thereby completing the installation.

[0026] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A cap structure of a GaN microwave power device based on LCP, comprising a substrate (1), characterized in that: The top of the base plate (1) is fixedly connected to a fixing mechanism (2), the fixing mechanism (2) comprising a fixing frame (201), a cover plate (207) is fixedly connected inside the fixing frame (201), a fixing block (203) is fixedly connected to the top of the cover plate (207), a second inclined block (214) is fixedly connected to the outside of the cover plate (207), a first inclined block (210) is fixedly connected inside the fixing frame (201), and the second inclined block (214) is matched with the first inclined block (210), The fixing frame (201) is provided with a groove (205) inside, a limiting block (212) is fixedly connected inside the groove (205), a sliding groove (215) is provided inside the limiting block (212), a sliding bar (213) is slidably connected inside the sliding groove (215), and one side of the sliding bar (213) is fixedly connected to the cover plate (207), and a rubber pad (206) is fixedly connected to the bottom of the groove (205), and the rubber pad (206) and the cover plate (207) are matched.

2. The cap structure of a GaN microwave power device based on LCP according to claim 1, characterized in that: The top of the fixed block (203) is fixedly connected to a heat sink (204), and the outsides of the fixed block (203) and the fixed frame (201) are fixedly connected to a support plate (209).

3. The cap structure of a GaN microwave power device based on LCP according to claim 2, characterized in that: The top of the support plate (209) is fixedly connected with a bolt (208), the outer side of the bolt (208) is threaded with a nut (211), the outer side of the bolt (208) is fixedly connected with an external thread, the inside of the nut (211) is provided with an internal thread, and the external thread and the internal thread are matched.

4. The cap structure of a GaN microwave power device based on LCP according to claim 1, characterized in that: The outer side of the fixing frame (201) is fixedly connected with pins (202), and the pins (202) and the base plate (1) are fixedly connected.

5. The cap structure of a GaN microwave power device based on LCP according to claim 2, characterized in that: The heat sink (204) is made of aluminum.

Images