Photoelectric light emitting device and manufacturing method

Abstract

The present invention relates to an optoelectronic luminescent device and a method for manufacturing the same, wherein the optoelectronic luminescent device comprises pixels having a transparent or translucent carrier substrate, on which a semiconductor light-emitting device having at least one micro-LED is arranged, wherein the micro-LED extends over a partial surface of the pixel, and wherein a main emission direction of the semiconductor light-emitting device points to a backscattering surface element arranged behind the transparent carrier substrate in the viewing direction; and the semiconductor light-emitting device comprises a beam shaping element.

Description

[0001] This application claims the priority of German patent application DE 10 2018 132 542.8, the disclosure content of which is incorporated herein by reference.

[0002] The present invention relates to a photoelectric light-emitting device and a method for manufacturing the photoelectric light-emitting device.

[0003] Semiconductor light sources with an edge length of less than 100 μm and typically less than 25 μm are known, for example, from US Pat. No. 6,410,940 B1 and are referred to in embodiments as pn light-emitting diodes as micro-LEDs (μLEDs). Micro-LEDs, which are usually based on indium gallium nitride (InGaN) and have at least one quantum well, have a higher energy efficiency and at the same time a longer service life than conventionally sized light-emitting diodes or carbon-based light-emitting diodes (OLEDs). Accordingly, they are advantageous for use in high-resolution displays for mobile devices and in large-scale optoelectronic light-emitting devices.

[0004] The micro-LEDs can be connected into a package with a wavelength converter to spectrally match the light emission.

[0005] No. 8,928,021 B1 discloses a device having at least one micro-LED, a light-conducting structure covering the micro-LED, and an encapsulation having a phosphor material with quantum wells as a wavelength converter.

[0006] WO 2011 / 082497 A1 discloses an optoelectronic package having at least one bottom-emitting LED as a light source, which is arranged on one side of a transparent carrier substrate. On the substrate side opposite the light source, there is a phosphor layer for spectrally matching the light visible to an observer. In addition, an alternative embodiment is described, for which the electromagnetic radiation emitted by the LED first strikes a reflector on the rear side before entering the phosphor layer.

[0007] Furthermore, primary optics at the LED, light-guiding elements directly connected thereto, and beam-guiding devices which form a reflection of the semiconductor light-emitting device with the LED are known, see for example US 2016 / 0149 101 A1, DE 10 2017 104 871 A1, DE 10 2011 003 988 A1, DE 10 2009 033 287 A1, DE 10 2010 009717 A1, DE 10 2011 015 726 A1, DE 10 2016 106 494 A1 and DE 10 2013 218 268 A1.

[0008] In typical applications with low packing density, the small active layer area of ​​the micro-LEDs leads to a clear difference between the point-like illuminated areas and the dark areas when observing the individual pixel surfaces. This so-called screen-door effect is particularly pronounced at small viewing distances and thus in applications such as VR glasses or video walls with large pixel pitches. If the illumination differences within the pixels persist periodically over the matrix arrangement of the display, the sub-pixel structure is often perceived and perceived as disturbing.

[0009] To solve this problem, US 2017 / 0062674 A1 proposes to enclose the vertically emitting micro-LEDs with a light guide, which acts as a diffuser and beam expansion lens in the viewing direction. Here, the light guide extends between optical isolators, which separate the illumination of adjacent pixels from each other.

[0010] Furthermore, US 2016 / 0178907 A1 describes a semiconductor display for which light emitted by a small-area light source in the direction of an observer is fed via an expanding diffuser to a lens filling the pixels, which lens produces a substantially parallel beam guidance in the further beam path. Another proposal for reducing the gate shadow effect in the viewing direction in front of the semiconductor light source by means of an arrangement consisting of microlenses and associated shutters can be derived from EP 3 240 037 A1.

[0011] EP 3 396 434 A1 also proposes: a diffraction grating is arranged above a light source that only partially fills the pixel surface to expand the illumination surface. WO 2017 / 139245 A1 describes another refractive optical device for improving pixel illumination. WO 2018 / 026851 A1 and WO 2013 / 059489 A1 list alternatives, wherein WO 2018 / 026851 A1 discloses the use of phase optical components. WO 2013 / 059489 A proposes: a plate-shaped translucent diffuser element is arranged in front of a small area of ​​the light source at a spacing matching the aperture angle generated by the light in the viewing direction, so that the pixel is illuminated, but it also appears optically separated from the adjacent pixels. This results in a large display in the main emission direction and causes intensity loss. In addition, the above-mentioned measures for reducing the door shadow effect need to be separated from the optical additional components for positioning, which make the manufacture of the optoelectronic light-emitting device including micro-LEDs difficult.

[0012] One object of the present invention is to reduce the gate effect for an optoelectronic luminescent device having at least one micro-LED occupying a part of the pixel surface by having as few components per pixel as possible to be operated individually. In this case, the overall device should have a small structural depth in the viewing direction. In addition, a method for producing an optoelectronic luminescent device is proposed.

[0013] According to the present invention, the optoelectronic light-emitting device comprises at least one pixel having a transparent or translucent carrier substrate, on which a pixel microcontroller unit and a semiconductor light-emitting device having at least one micro-LED are optionally arranged, and the micro-LED extends over a partial surface of the pixel, wherein the main emission direction of the semiconductor light-emitting device is aligned to a backscattering surface element arranged behind the transparent or translucent carrier substrate in the viewing direction, and wherein the semiconductor light-emitting device comprises a beam shaping element.

[0014] In the optoelectronic light-emitting device according to the invention, uniform and large-area illumination of the pixels can be achieved by means of the electromagnetic radiation emitted by the small micro-LEDs in that the observer observes the illuminated backscattering surface element instead of the light source. In this case, the observer observes through the transparent or translucent carrier substrate and thus to a certain extent through the plane of one or more pixels.

[0015] In the optoelectronic light-emitting device according to the present invention, the pixel comprises a transparent carrier substrate, which can also be partially transparent, i.e., semi-transparent, and can be made of, for example, glass, sapphire or a transparent polymer. Preferably, a pixel microcontroller unit and a semiconductor light-emitting device having at least one micro-LED extending over a partial surface of the pixel are arranged on the light-transmitting carrier substrate, so that the main emission direction of the semiconductor light-emitting device points to a backscattering surface element arranged behind the transparent carrier substrate in the viewing direction. In the present case, the viewing direction is understood to be the viewing direction starting from the observer's eye to the illuminated pixel surface. The observer is here in front of the pixel surface, which is therefore between the observer and the surface element.

[0016] Preferably, no direct light emission from the semiconductor light-emitting device having at least one micro-LED reaches the eye of the observer, so that only the electromagnetic radiation emitted by the illuminated, backscattering surface elements and passing through the transparent or translucent carrier substrate is visible. The semiconductor light-emitting device thus generates a shadow, which, however, is assumed to be smaller than the illuminated pixel surface due to the limited area extension of the micro-LEDs used and is not perceptible to the observer.

[0017] In one embodiment of the invention, the further components for controlling the micro-LEDs, which are arranged on a transparent or semi-transparent carrier substrate, are formed from an at least partially transparent material. This relates in particular to the control circuit between the optional pixel microcontroller and the micro-LEDs, which advantageously consists of a layer composite of an electrically conductive material which simultaneously has a high optical transmittance. For this purpose, for example, a structured layer with carbon nanotubes and a transparent conductive polymer can be used. Alternatively, for example, a transparent conductive oxide (TCO), such as indium tin oxide, indium zinc oxide or In2O3, can be selected for this purpose.

[0018] In another embodiment variant, the conductor track comprises, for example, an opaque metal layer. Structures that are only a few micrometers wide only slightly reduce the light transmission of the transparent or translucent carrier substrate and are not visible to an observer.

[0019] To further reduce shadow casting, the pixel micro control unit of the micro LED can be arranged in the pixel edge area above the optical isolator between adjacent pixels.

[0020] In order to reduce the structural depth in the viewing direction, the distance between the semiconductor light emitting device and the backscattering surface element in the main emission direction can preferably be at most one third of the pixel diagonal, in particular preferably at most one quarter. Therefore, a flat spacer with a correspondingly narrow base surface can be used between the transparent or translucent carrier substrate and the backscattering surface element, which simplifies the production of the optoelectronic light emitting device and also serves as an optical isolator between adjacent pixels.

[0021] The advantage in terms of production technology can be that the microscopic spacers are produced in a separate microstructuring process and are precisely positioned on a transparent or translucent carrier substrate corresponding to the semiconductor light-emitting device by means of an automated micromanipulation device and are materially connected thereto. In a subsequent production step, the assembled, transparent or translucent carrier substrate is then placed on the backscattering surface element.

[0022] In order to provide a small distance between the semiconductor light-emitting device and the backscattering surface element in connection with a large-area uniform illumination of the backscattering surface element, the semiconductor light-emitting device according to the invention comprises a beam-shaping element, for which purpose preferably at least 80% of the surface of the pixels emits at least 50% of the maximum radiation intensity during operation.

[0023] For an exemplary embodiment, vertically emitting micro-LEDs are used and the beam-shaping element includes a micro-optical device that expands the divergence of the semiconductor light-emitting device. For example, the micro-optical device can have a prismatic profile and / or a free-form cone and / or a lenslet array. In the present case, a lenslet array is understood to be a matrix arrangement of microlenses (or at least lenslets) of uniform focal length. Alternatively, the beam-shaping element can have nano-optical components, such as a waveguide configured as a photonic crystal. For another exemplary embodiment, a side-emitting micro-LED is used, and the beam-shaping element includes a combined refractive-reflective micro-optical device to amplify and homogenize the illuminated surface on the backscattering surface element.

[0024] According to a further development of the invention, the surface of the beam-shaping element has scattering particles. Alternatively or additionally, a diffuser can be integrated into the semiconductor light-emitting device, the arrangement of which is adapted to the emission characteristics of the micro-LEDs used, so that the light propagation is widened and preferably adapted to non-circular illumination of, for example, rectangular surfaces on the backscattering surface elements. Furthermore, radiation-absorbing components can be provided in the semiconductor light-emitting device, which components weaken the formation of local illumination maxima.

[0025] It is also possible to accommodate a wavelength converter in the semiconductor light-emitting device, which results in the formation of a microstructural unit that can be easily handled. This embodiment is particularly advantageous if a plurality of micro-LEDs with different emission spectra are present in the semiconductor light-emitting device. This results in an alternative embodiment for light sources of different colors (e.g., RGB devices) that are realized by assigning wavelength converters of different spectra to the micro-LEDs.

[0026] If there are multiple micro-LEDs within the semiconductor light emitting device, they can be packaged in a common beam-shaping element. As an alternative to this simplified embodiment, a separate beam-shaping element can be provided for each micro-LED of the semiconductor light emitting device, so that the illumination control can be adjusted more finely.

[0027] For a preferred embodiment, the beam shaping element assigned to at least one micro-LED is spaced apart from the backscattering surface element. The chamber between the transparent or translucent carrier substrate and the backscattering surface element of the pixel, which is present for this design, can be evacuated or filled with air. It is also conceivable that the area between the transparent or translucent carrier substrate and the backscattering surface element is partially or completely filled with an optically permeable material, which, for an advantageous improvement, comprises an optically scattering material. The filler forms a light guide and can include an immersion liquid, a film element made of, for example, ethylene-vinyl acetate copolymer (EVA) or thermoplastic polyurethane (TPU), or a material layer made of silicone.

[0028] In an advantageous embodiment of the backscattering surface element, the surface element has a flat surface at least in the region illuminated pixel by pixel. The flat surface is arranged diffusely for a preferred embodiment, wherein a coating with titanium oxide particles is present in a material with a low refractive index (i.e., for example, epoxy resin, silicone resin, polyacrylate or low-refractive index glass) for a possible implementation. Alternatively, aluminum oxide, zirconium oxide and magnesium fluoride or organic particles (e.g., methyl methacrylate) can be used, in particular in a high-refractive matrix.

[0029] If an optoelectronic lighting device is to be realized which appears black when not in operation and produces a high light-dark contrast, then backscattering surface elements which are designed to be directionally reflective, such as can be achieved by a metal coating, can be advantageous.

[0030] For this or other purposes, a layer structure with a polarizer and a λ / 4 plate can be arranged on a transparent or translucent carrier substrate, which layer structure initially linearly polarizes the scattered light from the outside and converts it into polarized radiation. By means of directional reflection, a reversal of the circular polarization occurs, so that the back reflection through the layer structure is blocked at the deflector after traversing the λ / 4 plate.

[0031] According to a further development of the invention, a spacer is provided between the transparent or translucent carrier substrate and the backscattering surface element, which spacer additionally serves as an optical isolator with respect to adjacent pixels. All features presented here can also be provided individually or in combination in this further development.

[0032] The spacers are therefore not only provided for setting a defined distance between the carrier substrate and the backscattering surface element, but they also serve as optical isolators between adjacent pixels. This makes it possible to reduce or avoid “crosstalk” between adjacent pixels.

[0033] A diffusely scattering surface design of the spacers may be provided such that they additionally contribute to homogenizing the illumination on the backscattering surface elements.

[0034] For a preferred design, the backscattering surface element can have a locally adapted reflectivity within a pixel. If there are multiple micro-LEDs with different color characteristics in a pixel, the high reflectivity can be limited to the following partial area by selecting the coating of the backscattering surface element, for which there is illumination of the same color. The perceptibility of the partial area of ​​spectrally inhomogeneous illumination within the pixel can be suppressed by coating or surface design of the section of the backscattering partial area with reduced reflectivity. In addition, the reflectivity of the backscattering surface element of the pixel can be adjusted in stages. This embodiment is particularly advantageous when the local inhomogeneous illumination intensity should be compensated in addition.

[0035] Exemplary design variants of the present invention are described below in conjunction with the accompanying drawings. The accompanying drawings schematically show:

[0036] Figure 1 A first variant of the optoelectronic light-emitting device according to the invention is shown.

[0037] Figure 2 A second variant of the optoelectronic light-emitting device according to the present invention is shown.

[0038] Figure 3 A partial cross section of a third variant of the optoelectronic lighting device according to the invention is shown in a side view.

[0039] Figure 4 A partial cross section of a third variant of the optoelectronic light-emitting device according to the present invention is shown in a front view.

[0040] Figure 5 A partial cross section of a fourth variant of the optoelectronic lighting device according to the invention is shown in a side view.

[0041] Figure 6 A partial cross section of a fifth variant of the optoelectronic lighting device according to the invention is shown in a top view.

[0042] according to Figure 1 The view of a first embodiment variant of the optoelectronic luminescent device 1 according to the invention is schematically simplified. The optoelectronic luminescent device 1 comprises a pixel 2 having a transparent or translucent carrier substrate 3 on which a semiconductor luminescent device 4 is arranged, which has at least one micro-LED 5.1, 5.2, 5.3 extending over a partial surface of the pixel 2. The optional pixel microcontroller unit is not shown in detail, wherein the functions of the pixel control can also be provided in a higher-level device.

[0043] In the example shown, three micro-LEDs are shown, wherein red light can be generated by means of micro-LED 5.1, green light can be generated by means of micro-LED 5.2, and blue light can be generated by means of micro-LED 5.3. This example is therefore an RGB pixel with three micro-LEDs. By correspondingly controlling micro-LEDs 5.1, 5.2, 5.3, a plurality of colors can be generated corresponding to the RGB color model.

[0044] The main emission direction 6 of the semiconductor light emitting device 4 points toward the backscattering surface element 14 which is arranged behind the transparent or translucent carrier substrate 3 in the viewing direction 7 . The main emission direction 6 is therefore at least substantially parallel to the viewing direction 7 .

[0045] For the pixel 2 shown, a semiconductor light emitting device 4 having three micro-LEDs 5.1, 5.2, 5.3 is therefore present on the rear side of a transparent or translucent carrier substrate 3 in the viewing direction 7. The semiconductor light emitting device 4 extends only over a partial surface of the pixel 2, so that a backscattering surface element 14 illuminated by the semiconductor light emitting device 4 in a main emission direction 6 emits large-area electromagnetic radiation through the transparent or translucent carrier substrate 3 toward an observer.

[0046] The backscattering surface element 14 has a flat surface with a reflective layer 15, which can be formed diffusely for a first design not shown in detail and is in particular composed of a material composite, which is composed of a layer material with a low refractive index, such as epoxy resin, silicone resin, polyacrylate or low-refractive index glass and titanium oxide particles. For the second embodiment shown, there is a directional reflective layer 15 formed by metallization, which prohibits the re-emission of light incident from the outside to improve the dark contrast associated with the layer structure composed of polarizer and λ / 4 plate 22 on the transparent or translucent carrier substrate 3.

[0047] For uniform illumination of the backscattering surface element 14, the semiconductor light emitting device 4 comprises a beam-shaping element 8, which surrounds three vertical micro-LEDs 5.1, 5.2, 5.3, emitting in the main emission direction 6, by means of micro-optics 9.1, 9.2 which amplify the divergence of the semiconductor light emitting device 4. By intensifying the lateral emission of the semiconductor light emitting device 4, even for a small distance between the transparent or translucent carrier substrate 3 and the backscattering surface element 14, a large-scale and uniform illumination of the visible luminous surface can be achieved, so that spacers 23.1, 23.2 designed as microelements can be used between the transparent or translucent carrier substrate 3 and the backscattering surface element 14. The spacers additionally serve as optical separators for adjacent pixels, which are not shown in detail.

[0048] The spacers 23.1, 23.2 can be manufactured as micromodules, for example, by a separate structuring process, for simplifying the manufacture of the optoelectronic light-emitting device 1 according to the present invention corresponding to the semiconductor light-emitting device 4 having micro-LEDs 5.1, 5.2, 5.3, which are then precisely positioned on a transparent or translucent carrier substrate 3 and connected to the substrate material.

[0049] While the backscattering surface element 14 is illuminated uniformly over a large area, the beam-shaping element 8 reduces the distance between the semiconductor light-emitting device 4 and the backscattering surface element 14 in the main emission direction 6, preferably to a maximum of one-third, in particular to a maximum of one-quarter, of the pixel diagonal, wherein during operation at least 80% of the surface of the pixel emits with a maximum radiation intensity of at least 50%. Preferably, coatings 24.1, 24.2 with low reflectivity are provided on sub-areas of the backscattering surface element 14 in order to homogenize the spectral emission, for which there is spectrally inhomogeneous illumination. For the sake of clarity, the sub-areas are shown oversized in the schematically simplified illustration, wherein the extent of the sub-areas can be limited to a small area by means of the beam-shaping element 8 and the concentrated arrangement of the micro-LEDs 5.1, 5.2, 5.3.

[0050] Figure 2 A schematic simplified diagram of a second embodiment variant of an optoelectronic light-emitting device 1 according to the invention is shown, wherein components identical to those of the first embodiment variant are denoted by the same reference numerals. For the embodiment shown, the region between a transparent or translucent carrier substrate 3 and a backscattering surface element 14 is filled with a semi-light-conducting element 25, wherein the carrier substrate carries a semiconductor light-emitting device 4 with micro-LEDs 5.1, 5.2, 5.3 and a beam-shaping element 8 on the back side. For this purpose, an immersion liquid, a film element made of, for example, ethylene-vinyl acetate copolymer (EVA) or thermoplastic polyurethane (TPU), or a material layer made of silicone can be used.

[0051] also, Figure 2The embodiment variant shown in the figure includes a spacer 23.3, which is placed on the backscattering surface element 14 or deposited on the surface element and / or is structured. The spacer 23.3 serves as a carrier component and is used for optical delimitation of adjacent pixels. The spacer 23.3 does not have to extend over the entire pixel circumference. Instead, in addition, there is at least one optical isolator 26 on the backscattering surface element 14, wherein the optical isolator 26 has a height extension that is optically effective for the barrier function but does not extend to the transparent or translucent carrier substrate 3. For a possible embodiment, the spacer 23.3 and / or the optical isolator 26 are formed on the backscattering surface element 14 by photo-controlled electrophoretic deposition (EPD) or by 3D printing.

[0052] exist Figure 3 and Figure 4 1 shows an advantageously designed micro-optical device 9.1 for a semiconductor light-emitting device 4 having micro-LEDs 5.1, 5.2, 5.3 arranged in series in schematically simplified side and front views. When viewing in the direction of the series arrangement of micro-LEDs 5.1, 5.2, 5.3, a beam-expanding prismatic profile 10 can be seen.

[0053] In addition, the semiconductor light emitting device 4 comprises a diffuser 13 , wherein the microstructure unit composed of the micro-LEDs 5 . 1 , 5 . 2 , 5 . 3 , the diffuser 13 and the prism-shaped micro-optics 9 . 1 are fixed to the transparent or translucent carrier substrate 3 by means of a reflective adhesive layer 12 .

[0054] To illustrate the fourth variant, Figure 5 A semiconductor light emitting device 4 is shown with three micro-LEDs 5.1, 5.2, 5.3 of different colors arranged in a triangle, which are covered by a micro-optical device 9.2, which is formed as a free-form cone 11 with scattering particles 16.n on the surface or in the volume. For an embodiment not shown in detail, scattering particles are present in the volume of the micro-optical device 9.2.

[0055] Figure 6 A fifth variant of a semiconductor light emitting device 4 is schematically and simplified, with three micro-LEDs 5.1, 5.2, 5.3 of different colors, which are designed as lateral emitters. The beam shaping element 8 receiving the light emitted by the micro-LEDs 5.1, 5.2, 5.3 comprises a nano-optical waveguide 28 and a combined refractive-reflective micro-optical device 27.1, 27.2 adjoining it laterally.

[0056] In a further development of the semiconductor light-emitting device 4 which is not shown in greater detail, the semiconductor light-emitting device 4 can comprise a wavelength converter.

[0057] Reference numerals list

[0058] 1 Photoelectric light-emitting device

[0059] 2 pixels

[0060] 3. Transparent or translucent carrier substrate

[0061] 4 Semiconductor light-emitting devices

[0062] 5.1 - 5.3 Micro LED

[0063] 6 Main radiation direction

[0064] 7 Observation direction

[0065] 8 Beam shaping elements

[0066] 9.1, 9.2 Micro-optical devices

[0067] 10 Prism Profile

[0068] 11 Free-form cone

[0069] 12 Adhesive layer

[0070] 13 Diffuser

[0071] 14 Backscattering surface elements

[0072] 15 Reflection layer

[0073] 16.n Scattering particles

[0074] 20 Common beam shaping element

[0075] 22 Layer structure consisting of polarizer and λ / 4 plate

[0076] 23.1, 23.2 Spacers

[0077] 23.3 Spacers

[0078] 24.1, 24.2 Coatings with low reflectivity

[0079] 25 Light guide element

[0080] 26 Optical Isolator

[0081] 27.1, 27.2 Combined refractive-reflective micro-optics

[0082] 28 nanometer optical waveguide

Claims

1. An optoelectronic light-emitting device comprising a pixel (2), wherein the pixel has A transparent or translucent carrier substrate (3) on which a semiconductor light-emitting device (4) is arranged, the semiconductor light-emitting device having at least one micro-LED (5.1, 5.2, 5.3) extending over a partial surface of the pixel (2), in, The main emission direction (6) of the semiconductor light-emitting device (4) points toward a backscattering surface element (14) arranged behind the transparent or translucent carrier substrate (3) in an observation direction (7); The backscattering surface element (14) has a planar surface with a reflective layer (15); and The semiconductor light emitting device (4) comprises a beam shaping element (8).

2. The photoelectric light-emitting device according to claim 1, wherein: The micro LEDs (5.1, 5.2, 5.3) are designed to emit vertically and / or the beam-shaping element (8) comprises micro-optics (9.1, 9.2) that amplify the divergence of the semiconductor light-emitting device (4).

3. The photoelectric light-emitting device according to claim 2, wherein: The micro-optical device (9.1, 9.2) comprises a prismatic profile (10) and / or a free-form cone (11) and / or a lenslet array.

4. The photoelectric light-emitting device according to claim 1, wherein: The micro-LEDs (5.1, 5.2, 5.3) are designed to emit laterally and / or the beam-shaping element (8) comprises a combined refractive-reflective micro-optic (27.1, 27.2).

5. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The beam-shaping element (8) has scattering particles (16.n) on the surface.

6. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The semiconductor light emitting device (4) comprises a diffuser (13) and / or a wavelength converter.

7. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The semiconductor light emitting device (4) comprises a plurality of micro LEDs (5.1, 5.2, 5.3) having different emission spectra and / or spectrally different associated wavelength converters.

8. The photoelectric light-emitting device according to claim 7, wherein: A common beam-shaping element (8) is assigned to the micro LEDs (5.1, 5.2, 5.3) in the semiconductor light-emitting device (4).

9. The photoelectric light-emitting device according to claim 7, wherein: A separate beam-shaping element is assigned to at least one micro LED (5.1, 5.2, 5.3) in the semiconductor light-emitting device (4).

10. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The backscattering surface element (14) has a flat surface and / or wherein, for spectral homogenization of the emission, a coating (24.1, 24.2) with low reflectivity is provided on a subregion of the backscattering surface element (14) which can be illuminated in a spectrally inhomogeneous manner.

11. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The backscattering surface element (14) is embodied in a diffusely scattering manner.

12. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The backscattering surface element (14) is designed to be directionally reflective and a layer structure having a polarizer and a λ / 4 plate (22) is arranged on the transparent or translucent carrier substrate (3).

13. The optoelectronic light-emitting device according to any one of claims 1 to 4, wherein: The control circuit between the pixel micro control unit and the micro LEDs (5.1, 5.2, 5.3) is made of transparent or semi-transparent material.

14. The photoelectric light-emitting device according to claim 7, wherein: A separate beam-shaping element is assigned to each micro LED (5.1, 5.2, 5.3) in the semiconductor light-emitting device (4).

15. An optoelectronic light-emitting device, comprising a pixel (2), wherein the pixel has A transparent or translucent carrier substrate (3) on which a semiconductor light-emitting device (4) is arranged, the semiconductor light-emitting device having at least one micro-LED (5.1, 5.2, 5.3) extending over a partial surface of the pixel (2), in, The main emission direction (6) of the semiconductor light emitting device (4) points toward a backscattering surface element (14) arranged behind the transparent or translucent carrier substrate (3) in the viewing direction (7). The backscattering surface element (14) has a planar surface with a reflective layer (15). In this case, a plurality of spacers (23.1) are arranged between the transparent or translucent carrier substrate (3) and the backscattering surface element (14), which spacers additionally serve as optical isolators with respect to adjacent pixels.

16. A method for producing an optoelectronic light-emitting device according to any one of claims 1 to 15, in, Arranging a pixel micro control unit and a control circuit starting from the pixel micro control unit on a transparent or semi-transparent carrier substrate (3) to form a pixel (2); and Connecting at least one micro-LED (5.1, 5.2, 5.3) and at least one beam shaping element (8) to form a semiconductor light-emitting device (4), which is fixed on the transparent or translucent carrier substrate (3) and is electrically contacted with the control line, wherein the semiconductor light-emitting device (4) extends over a partial surface of the pixel (2); and wherein the spacers (23.1, 23.2) are arranged on the transparent or translucent carrier substrate (3); and In a subsequent manufacturing step, the assembled transparent or translucent carrier substrate (3) is connected to the backscattering surface element (14) so ​​that the backscattering surface element (14) is arranged behind the transparent carrier substrate (3) in the viewing direction (7) and the main emission direction (6) of the semiconductor light-emitting device (4) points to the backscattering surface element (14).

Images