Semiconductor device

Abstract

The present application provides a semiconductor device, which can suppress the generation of damage to an insulating circuit substrate. In the outer edge corner portions (R1) to (R50) of a plurality of circuit patterns (12) facing the outer edge portions of an insulating board (11), the curvatures of the outer edge corner portions (R1, R20, R25, R44) corresponding to the corner portions of the insulating board (11) are smaller than the curvatures of the outer edge corner portions (R2 to R19, R21 to R24, R26 to R43, R45 to R50) not corresponding to the corner portions of the insulating board (11). Therefore, thermal stress generated to the outer edge portions of the insulating board (11) can be moderated. In particular, to the corner portions of the outer edge portions of the insulating board (11), greater thermal stress can be moderated. Thus, the generation of damage to the insulating circuit substrate (10) can be suppressed, and the reliability of the semiconductor device (50) can be prevented from being reduced.

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] Semiconductor devices include power devices and are used as power conversion devices. Power devices are semiconductor chips that include, for example, IGBTs (Insulated Gate Bipolar Transistors) or power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors). Such semiconductor devices include the semiconductor chip and an insulating circuit substrate on which the semiconductor chip is disposed via solder. The insulating circuit substrate includes an insulating plate, a plurality of circuit patterns formed on the insulating plate, and a metal plate formed on the back side of the insulating plate. The semiconductor chip is disposed on any one of the plurality of circuit patterns via solder.

[0003] In such semiconductor devices, the insulating circuit board sometimes experiences stress concentration due to the difference in thermal expansion coefficients between the insulating plate and multiple circuit patterns during thermal cycling, leading to damage such as cracks in the insulating plate. To address this problem, techniques have been proposed, for example, as follows: The circuit pattern and metal plate are disposed on the insulating plate such that the corner faces of the circuit pattern and the corner faces of the metal plate are aligned when viewed from above, thereby making the curvature of the corners of the circuit pattern greater than that of the corners of the metal plate (for example, see Patent Document 1). Alternatively, the circuit pattern and metal plate are disposed on the insulating plate such that the corner faces of the circuit pattern are positioned further inward than the corner faces of the metal plate when viewed from above, thereby making the curvature of the corners of the circuit pattern greater than that of the corners of the metal plate (for example, see Patent Document 2).

[0004] Furthermore, in semiconductor devices, when a heat sink is disposed on the back side of a metal plate of an insulating circuit board via solder, stress concentration sometimes occurs at the interface between the solder and the metal plate over time. Therefore, a solution has been proposed in which the area of ​​the circuit pattern is smaller than the area of ​​the metal plate, and at least one corner of the circuit pattern overlaps with a corner of the metal plate when viewed from above (for example, see Patent Document 3).

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2005-011862

[0008] Patent Document 2: Japanese Patent Application Publication No. 2016-058595

[0009] Patent Document 3: Japanese Patent Application Publication No. 2010-232545 Summary of the Invention

[0010] Technical issues

[0011] However, even with various methods proposed to prevent stress concentration in semiconductor devices, stress concentration can still occur on the insulating circuit board due to the number, shape, and arrangement of circuit patterns, leading to damage to the insulating circuit board. Damage to the insulating circuit board reduces the reliability of the semiconductor device. Therefore, it is desirable to propose various technologies that can help solve this problem.

[0012] The present invention was made in view of the following circumstances, and its object is to provide a semiconductor device capable of suppressing damage to the insulating circuit board.

[0013] Technical solution

[0014] According to one aspect of the present invention, a semiconductor device is provided having an insulating circuit substrate having an insulating plate and a plurality of circuit patterns formed on the front side of the insulating plate, wherein the curvature of the outer edge corner of the plurality of circuit patterns facing the outer edge of the insulating plate is less than the curvature of the outer edge corner not corresponding to the corner of the insulating plate.

[0015] Technical effect

[0016] According to the disclosed technology, it is possible to provide a semiconductor device that can suppress damage to the insulating circuit board and suppress the reduction of reliability. Attached Figure Description

[0017] Figure 1 This is a side cross-sectional view of the semiconductor device according to the first embodiment.

[0018] Figure 2 This is a top view (front view) of the insulating circuit board included in the semiconductor device of the first embodiment.

[0019] Figure 3 This is a top view (back side) of the insulating circuit board included in the semiconductor device of the first embodiment.

[0020] Figure 4 This is a magnified top view of a portion of the insulating circuit board of the first embodiment.

[0021] Figure 5 This is a top view of the circuit pattern of the insulating circuit board included in the semiconductor device of the second embodiment.

[0022] Symbol Explanation

[0023] 10 Insulated circuit board

[0024] 11 Insulation Board

[0025] 12 Circuit Pattern

[0026] 13 Metal Plates

[0027] 13a pit

[0028] 14. Ditch

[0029] 15 bond wires

[0030] 20, 21 Semiconductor chips

[0031] 22 Electronic components

[0032] 30 Contact components

[0033] 40 External connection terminals

[0034] 41. Shell

[0035] 42 Packaged Components

[0036] 50 Semiconductor Devices

[0037] Corner area A1~A4

[0038] Side areas B1~B4

[0039] R1~R50 outer corner Detailed Implementation

[0040] Hereinafter, the embodiments will be described with reference to the accompanying drawings. It should be noted that in the following description, [the following text is incomplete and requires further context]. Figure 1 In the semiconductor device 50, "front side" and "upper surface" refer to the surface facing upwards. Similarly, in Figure 1 In the semiconductor device 50, "upper" indicates the upper direction. Figure 1 In the semiconductor device 50, "back side" and "lower surface" refer to the surface facing downwards. Similarly, in Figure 1 In the semiconductor device 50, "down" indicates the direction of the lower side. The same directionality may be used in other figures as needed. "Front side," "upper surface," "upper," "back side," "lower surface," "lower," and "side side" are merely convenient expressions for determining relative positional relationships and are not intended to limit the technical concept of the invention. For example, "upper" and "lower" do not necessarily refer to a plumb line relative to the ground. That is, the directions of "upper" and "lower" are not limited to the direction of gravity. Furthermore, curvature (1 / r) represents the average value at the two corners. Additionally, the radius of curvature (r) is the reciprocal of the curvature.

[0041] [First Implementation Method]

[0042] use Figures 1-3 The semiconductor device of the first embodiment will be described. Figure 1 This is a side cross-sectional view of the semiconductor device according to the first embodiment. Figure 2 This is a top view (front view) of the insulating circuit board included in the semiconductor device of the first embodiment. It should be noted that... Figure 2 The illustrations of the packaging components and housing are omitted in the text. Figure 3 This is a top view (back side) of the insulating circuit board included in the semiconductor device of the first embodiment. It should be noted that... Figure 3 yes Figure 2 This is a top view of the back side of the insulating circuit board 10. The circuit pattern 12 on the front side is indicated by dashed lines. Furthermore, in the first embodiment, the multiple circuit patterns 12, multiple semiconductor chips 20, 21, multiple contact members 30, multiple bonding wires 15, and multiple external connection terminals 40 are described using the same symbols without distinguishing between them individually. It should be noted that, for components other than these, even if there are multiple components, they are not distinguished individually and are described using the same symbols.

[0043] like Figure 1 and Figure 2 As shown, the semiconductor device 50 includes an insulating circuit board 10, semiconductor chips 20 and 21 bonded to the front side of the insulating circuit board 10, and electronic components 22. The semiconductor device 50 has contact members 30 bonded to the front side of the insulating circuit board 10. The semiconductor chips 20 and 21, electronic components 22, and contact members 30 are bonded to the front side of the insulating circuit board 10 by bonding members such as solder (not shown). Additionally, the semiconductor device 50 has bonding wires 15 electrically connecting the front side of the insulating circuit board 10 to the main electrodes of the semiconductor chips 20 and 21. Furthermore, external connection terminals 40 are press-fitted onto the contact members 30. These components of the semiconductor device 50 are covered by a housing 41. The opening of the housing 41 is bonded to the outer periphery of the insulating plate 11 of the insulating circuit board 10 by adhesive (not shown). It should be noted that the front end of the external connection terminal 40 extends upward from the housing 41. Furthermore, the semiconductor device 50 is encapsulated inside the housing 41 by a packaging member 42.

[0044] The insulating circuit board 10 includes an insulating plate 11, a plurality of circuit patterns 12 formed on the front side of the insulating plate 11, and a metal plate 13 formed on the back side of the insulating plate 11. The insulating plate 11 is insulating and is made of ceramic or insulating resin with excellent thermal conductivity. The ceramic is alumina, aluminum nitride, silicon nitride, etc. The insulating resin is a paper-phenol substrate, a paper-epoxy board, a glass composite substrate, a glass-epoxy board, etc. The thickness of such an insulating plate 11 is 0.2 mm or more and 2.5 mm or less.

[0045] The multiple circuit patterns 12 are made of a material with excellent conductivity. Such a material is, for example, copper or a copper alloy. The thickness of these multiple circuit patterns 12 is 0.1 mm or more and 2.5 mm or less. Furthermore, to improve corrosion resistance, a plating process can be used to form a coating on the surface of the circuit patterns 12. The plating material used for the coating is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy. The area of ​​the insulating plate 11 where the multiple circuit patterns 12 are formed (the first forming area) is rectangular when viewed from above.

[0046] In addition, such as Figure 2 As shown, in the plurality of circuit patterns 12, each corner facing the outer edge of the insulating plate 11 is designated as outer edge corners R1 to R50. Corners of the plurality of circuit patterns 12 that do not face the outer edge of the insulating plate 11 and are located inside the outer edge are designated as inner corners. Furthermore, the portions of the circuit patterns 12 facing the corners of the insulating plate 11 are designated as corner regions A1 to A4. The portions of the circuit patterns 12, excluding corner regions A1 to A4, facing the outer edge of the insulating plate 11 are designated as side regions B1 to B4. That is, each corner of the plurality of circuit patterns 12 includes: outer edge corners R1, R20, R25, and R44 located in corner regions A1 to A4; outer edge corners R2 to R19, R21 to R24, R26 to R43, and R45 to R50 located in side regions B1 to B4; and inner corners. In the rectangular insulating plate 11, a plurality of circuit patterns 12 include: outer corner portions R1, R20, R25, and R44 located in corner regions A1 to A4 opposite to the four corners of the insulating plate 11; outer corner portions R2 to R19, R21 to R24, R26 to R43, and R45 to R50 located in side regions B1 to B4 opposite to the four sides of the insulating plate 11 (excluding the four corners); and inner corner portions. Among the plurality of circuit patterns 12, the circuit patterns 12 including corner regions A1 to A4 and side regions B1 to B4 are located on the outer edge side of the insulating plate 11. The circuit patterns 12 on the outer edge side only need to include the portion facing the outer edge of the insulating plate 11. A greater number of circuit patterns 12 with an area smaller than that of the circuit patterns 12 on the inner side of the insulating plate 11 are arranged on the outer edge side of such an insulating plate 11. In particular, a greater number of smaller circuit patterns 12 are provided along the length of the insulating plate 11 on the outer edge side of the insulating plate 11.

[0047] The contact components 30 are mostly disposed on the outer edge of the circuit pattern 12 of the insulating plate 11 among the multiple circuit patterns 12. On the other hand, among the multiple circuit patterns 12, the semiconductor chips 20 and 21 are mostly disposed on the inner side of the circuit pattern 12 compared to the circuit pattern 12 on the outer edge.

[0048] Specifically, in the longitudinal direction of the insulating plate 11, the contact member 30 is provided on the circuit pattern 12 on the outer edge side, and the semiconductor chips 20 and 21 are provided at a position closer to the contact member 30. Furthermore, the semiconductor chips 20 and 21 are not provided in the corner regions A1-A4 and the side regions B1 and B3. The semiconductor chips 20 and 21 are positioned closer to the corner regions A1-A4 and the side regions B1-B4. The semiconductor chips 20 and 21 are provided on the circuit pattern 12 in the longitudinal direction of the insulating plate 11 that is closer to the outer edge side. Alternatively, when the semiconductor chips 20 and 21 are provided on the circuit pattern 12 on the outer edge side in the longitudinal direction of the insulating plate 11, they are positioned inside the contact member 30, separated by the groove 14 described later. Furthermore, the contact member 30 is provided on the circuit pattern 12 opposite to the corner of the insulating plate 11, but the semiconductor chips 20 and 21 are not provided. Details regarding the corners of these multiple circuit patterns 12 will be described later.

[0049] Additionally, in such a circuit pattern 12, a groove 14 is appropriately formed. The groove 14 is formed between the configuration areas of the semiconductor chips 20 and 21, and between the configuration areas and the areas of the terminals and / or electronic components 22 such as the contact members 30.

[0050] The metal plate 13 is made of a metal with excellent thermal conductivity. Such a metal is aluminum, iron, silver, copper, or an alloy containing at least one of these metals. Additionally, a heat sink and cooling unit (not shown) can be formed on the back of the metal plate 13. The thickness of the metal plate 13 is the same as the thickness of the plurality of circuit patterns 12, being 0.1 mm or more and 2.5 mm or less. It should be noted that the insulating plate 11 and the metal plate 13, when viewed from above... Figure 3 As shown, it is rectangular. Furthermore, when viewed from above, the area of ​​the metal plate 13 is smaller than the area of ​​the insulating plate 11, but larger than the area where the circuit pattern 12 is formed, and it is rectangular. Moreover, when viewed from above, the metal plate 13 has multiple recesses (recesses) 13a formed on the outer side of the area where the circuit pattern 12 is formed and along its outer edge. The recesses 13a are, for example, circular in shape. Their diameter is 50 μm or more and 1.0 mm or less. Therefore, the insulating circuit board 10 is rectangular. Additionally, in the insulating circuit board 10, the total volume of the circuit pattern 12 is smaller than the volume of the metal plate 13.

[0051] Bonding wires 15 appropriately electrically connect semiconductor chips 20, 21 to circuit pattern 12, or between multiple semiconductor chips 20, 21. Such bonding wires 15 are made of a material with excellent conductivity. Such materials include gold, silver, copper, aluminum, or alloys containing at least one of these metals. Furthermore, the diameter of the bonding wires 15 is, for example, 100 μm or more and 200 μm or less. Other bonding wires 15 have diameters, for example, 350 μm or more and 500 μm or less.

[0052] As the insulating circuit board 10 having such a configuration, materials such as DCB (Direct Copper Bonding) substrates, AMB (Active Metal Brazed) substrates, and resin insulating substrates can be used. Alternatively, the cooling unit (not shown) described above can be mounted on the metal plate 13 of the insulating circuit board 10 using thermally conductive grease such as silicone mixed with metal oxide fillers to improve heat dissipation. In this case, the cooling unit is made of materials with excellent thermal conductivity, such as aluminum, iron, silver, copper, or alloys containing at least one of these metals. Furthermore, as the cooling unit, heat sinks consisting of one or more fins and water-based cooling devices can be used.

[0053] Semiconductor chip 20 includes power device elements made of silicon or silicon carbide. These power device elements are switching elements such as IGBTs and power MOSFETs. For example, semiconductor chip 20 has a drain electrode (or collector) as a main electrode on its back side, and a gate electrode and a source electrode (or emitter electrode) as the main electrode on its front side. Additionally, semiconductor chip 21 includes diodes such as SBDs (Schottky Barrier Diodes) and FWDs (Free Wheeling Diodes). Semiconductor chip 21 has a cathode as a main electrode on its back side and an anode as a main electrode on its front side. The back sides of the aforementioned semiconductor chips 20 and 21 are bonded to a predetermined circuit pattern 12. It should be noted that semiconductor chips 20 and 21 are bonded to the circuit pattern 12 by solder (not shown). It should be noted that the solder is based on lead-free solder. Lead-free solder has at least one alloy as its main component, for example, an alloy composed of tin and silver, an alloy composed of tin and antimony, an alloy composed of tin and zinc, or an alloy composed of tin and copper. Additionally, the solder may contain additives. These additives may include, for example, copper, bismuth, indium, nickel, germanium, cobalt, or silicon. Furthermore, although not illustrated, RC (Reverse-Conducting) IGBTs, which combine the functions of IGBTs and FWD, can be used instead of semiconductor chips 20 and 21. Additionally, depending on requirements, lead frames, external connection terminals (pin terminals, contact parts, etc.), and electronic components (thermistors, current sensors) can be used instead of semiconductor chips 20 and 21. It should be noted that the thickness of such semiconductor chips 20 and 21 is, for example, 180 μm or more and 220 μm or less, with an average thickness of approximately 200 μm. Electronic components 22 include capacitors, resistors, thermistors, current sensors, and integrated circuits (ICs).

[0054] The contact member 30 includes a main body with a cylindrical through hole formed inside and convex flanges respectively provided at the open ends of the main body. The contact member 30 is made of a metal with excellent electrical conductivity. Such a metal is, for example, silver, copper, nickel, or an alloy containing at least one of these metals. To improve corrosion resistance, a coating can be formed on the surface of the contact member 30 by plating. The plating material used for the coating is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy. In such a contact member 30, the radius of the through hole at the open end is 0.1 mm or more and 1.0 mm or less. In addition, the radius of the outer diameter of the flange at the open end is 0.5 mm or more and 2.0 mm or less.

[0055] The external connection terminal 40 has a rod-shaped main body and tapered front ends formed at both ends of the main body. The main body is prismatic. The length of the diagonal of the cross-section of the external connection terminal 40 is several percentage points longer than the diameter of the main body of the contact member 30. Therefore, the external connection terminal 40 can be pressed into the contact member 30. In addition, the external connection terminal 40 is also made of a metal with excellent conductivity. Such a metal is, for example, silver, copper, nickel, or an alloy containing at least one of these metals.

[0056] The housing 41 is box-shaped and made of thermoplastic resin. Such resins include PPS, PBT, PBS, PA, or ABS. Furthermore, the housing 41 has an opening (not shown) for external connection terminals 40 to extend out of the housing 41. The edge of the opening of this housing 41 is bonded to the outer edge of the insulating plate 11 of the insulating circuit board 10 via adhesive.

[0057] The encapsulation component 42 can be, for example, a silicone gel. Alternatively, it may contain a thermosetting resin such as epoxy resin, phenolic resin, or maleimide resin, as well as a filler material contained within the thermosetting resin. As an example of such an encapsulation component 42, it may contain epoxy resin and a filler material such as silica, alumina, boron nitride, or aluminum nitride as a filler in the epoxy resin.

[0058] Here, we will explain the case where the curvature of each corner of the plurality of circuit patterns 12 in the insulating circuit board 10 is equal. The coefficients of thermal expansion of the insulating plate 11, the circuit patterns 12, and the metal plate 13 are different. Furthermore, the thickness of the metal plate 13 and the plurality of circuit patterns 12 are equal, and when viewed from above, the area of ​​the metal plate 13 is larger than the area where the plurality of circuit patterns 12 are formed. That is, the volume of the metal plate 13 is larger than the total volume of the plurality of circuit patterns 12 relative to the insulating plate 11. For example, the volume of the metal plate 13 is more than 10% and less than 100% larger than the total volume of the plurality of circuit patterns 12. If such an insulating circuit board 10 is subjected to thermal cycling, thermal stress will be generated due to the difference in the coefficients of thermal expansion, thereby damaging the insulating plate 11. In particular, among the plurality of circuit patterns 12 in the insulating circuit board 10, there are circuit patterns 12 on the outer edge side of the insulating plate 11 that are relatively smaller than the circuit patterns 12 on the inner side of the insulating plate 11. Therefore, greater thermal stress will be generated at the outer edge of the insulating plate 11. Furthermore, at the outer edge of the insulating plate 11, greater thermal stress will be generated at the corners than at the sides.

[0059] Therefore, regarding the plurality of circuit patterns 12 of the insulating circuit board 10 in the first embodiment, the curvature of the outer edge corners R1 to R50 facing the outer edge of the insulating plate 11 is less than the curvature of the inner corners not facing the outer edge of the insulating plate 11. Furthermore, among the curvatures of the outer edge corners R1 to R50, the curvatures of the outer edge corners R1, R20, R25, and R44 corresponding to the corners of the insulating plate 11 are less than the curvatures of the outer edge corners R2 to R19, R21 to R24, R26 to R43, and R45 to R50 not corresponding to the corners of the insulating plate 11. That is, the curvature of the corners of the multiple circuit patterns 12 decreases in the following order: inner corners, outer corners R2 to R19, R21 to R24, R26 to R43, R45 to R50 in the side regions B1 to B4, and outer corners R1, R20, R25, and R44 in the corner regions A1 to A4.

[0060] For details, use Figure 4 Let me explain. Figure 4 This is an enlarged top view of a portion of the insulating circuit board of the first embodiment. It should be noted that... Figure 4 yes Figure 2 A magnified view of the upper left part. Additionally, in Figure 4 The diagrams of the bonding line 15, semiconductor chips 20 and 21, and contact component 30 are omitted. Accordingly, the outer corners R1-R11 and R47-R50 of the circuit pattern 12 in corner regions A1 and side regions B1 and B4 have smaller curvatures than the inner corners. Furthermore, among the outer corners R1-R11 and R47-R50, the curvature of the outer corner R1 in corner region A1 is smaller than that of the outer corners R2-R11 and R47-R50 in side regions B1 and B4. For example, the radius of curvature r of the outer corner R1 is approximately 1.0 mm, while the radius of curvature r of the outer corners R2-R11 and R47-R50 is approximately 0.8 mm. Furthermore, the radius of curvature r of the corners (inner corners) of the circuit pattern 12, excluding corner region A1 and side regions B1 and B4, is approximately 0.5 mm. The radius of curvature r of the outer corner R1 is 0.8 mm or more, preferably 0.8 mm or more and 1.1 mm or less. The radius of curvature r of the outer corners R2 to R11 and R47 to R50 is 0.6 mm or more, preferably 0.6 mm or more and 0.9 mm or less. Additionally, the radius of curvature r of the corners (inner corners) of the circuit pattern 12, excluding corner region A1 and side regions B1 and B4, is 0.3 mm or more, preferably 0.3 mm or more and 0.7 mm or less. This suppresses the formation of cracks in the insulating circuit board 10 and ensures the required electrode area. Figure 4The curvature of the outer corners R12 to R46 of the corner regions A2 to A4 (not shown) and the side regions B1 to B4 is also less than the curvature of the corners (inner corners) of the circuit pattern 12 on the inner side of the insulating plate 11. Furthermore, the curvature of the outer corners R20, R25, and R44 of the corner regions A2 to A4 is also less than the curvature of the outer corners R12 to R19, R21 to R24, R26 to R43, R45, and R46 of the side regions B1 to B4. Therefore, the thermal stress generated on the outer edge of the insulating plate 11 can be mitigated in the insulating circuit board 10. The greater thermal stress generated at the corners can be mitigated at the outer edge of the insulating plate 11.

[0061] Furthermore, the contact member 30 is disposed on the circuit pattern 12 including the corner region A1. The bonding portion of the contact member 30 is circular when viewed from above. Therefore, the front area of ​​the circuit pattern 12 with a small curvature can be effectively utilized. On the other hand, the semiconductor chips 21 and 22 are not disposed on the circuit pattern 12 including the corner region A1. The bonding portion of the semiconductor chips 21 and 22 is rectangular when viewed from above. Therefore, the semiconductor chips 21 and 22 cannot be disposed near the corner of the front area of ​​the circuit pattern 12 with a small curvature. When the semiconductor chips 21 and 22 are disposed, a larger area is required to fit the shape of the bonding portion. Therefore, it is preferable that the contact member 30 is disposed on the circuit pattern 12 including the corner region A1 and the side regions B1 and B4. On the other hand, it is preferable that the semiconductor chips 21 and 22 are not disposed on the circuit pattern 12 including the corner region A1 and the side regions B1 and B4, but are disposed on the circuit pattern 12 that is inside the circuit pattern 12 including the corner region A1 and the side regions B1 and B4. By arranging the semiconductor chips 21, 22 and the contact member 30 in a manner corresponding to the circuit pattern 12 with different curvatures at the corners, the front area of ​​the circuit pattern 12 can be effectively utilized.

[0062] The semiconductor device 50 described above includes an insulating circuit board 10, which has an insulating plate 11 and a plurality of circuit patterns 12 formed on the front side of the insulating plate 11. Among the curvatures of the outer edge corners R1 to R50 of the plurality of circuit patterns 12 facing the outer edge of the insulating plate 11, the outer edge corners R1, R20, R25, and R44 corresponding to the corners of the insulating plate 11 have smaller curvatures. Therefore, thermal stress generated on the outer edge of the insulating plate 11 can be mitigated. In particular, the greater thermal stress generated at the corners can be mitigated at the outer edge of the insulating plate 11. Therefore, damage to the insulating circuit board 10 can be suppressed, and a decrease in the reliability of the semiconductor device 50 can be prevented.

[0063] [Second Implementation]

[0064] In the second embodiment, using Figure 5Other ways of describing the circuit pattern 12 included in the insulating circuit board 10 of the first embodiment will be explained. It should be noted that the semiconductor device of the second embodiment has the same configuration as that of the first embodiment, except for the circuit pattern 12 described below. Figure 5 This is a top view of the circuit pattern of the insulating circuit board included in the semiconductor device of the second embodiment. Figure 5 The circuit pattern 12 shown is arranged along the outer edge of the insulating plate 11 and is suitable for arranging the contact members 30. Figure 5 As an example, it shows about Figure 2 The circuit pattern 12, which includes the outer corner R33 and R34, has three types.

[0065] As described in the first embodiment, the curvature of the outer corner portions R1 to R50 of the plurality of circuit patterns 12, which are included in the corner regions A1 to A4 and the side regions B1 to B4, is less than the curvature of the inner corner portions of the circuit pattern 12. However, if the curvature of the outer corner portions R1 to R50 is made too small, the area of ​​the circuit pattern 12 including the outer corner portions R1 to R50 will be limited. Therefore, the outer corner portion of the circuit pattern 12 on which the contact member 30 is disposed is set to a curvature radius greater than or equal to the outer diameter of the opening end of the contact member 30, and half the width of the circuit pattern 12 on which the contact member 30 is mounted is set to a curvature radius less than or equal to the radius. For example, in Figure 5 In (A), it is shown that the radii of curvature of the outer corners R33 and R34 of the circuit pattern 12 are approximately equal to the radius of curvature of the outer periphery of the opening of the contact member 30. Furthermore, in Figure 5 In (B), it is shown that the radii of curvature of the outer corners R33 and R34 of the circuit pattern 12 are approximately equal to the radius of curvature of the circuit pattern 12 on which the contact member 30 is mounted, which is half the width of the circuit pattern 12. Figure 5 In (C), it is further shown that the front end of the circuit pattern 12 has a shape that is approximately the same as the concentric circles centered on the center of the opening of the contact member 30. Figure 5 In any of the cases (A) to (C), the contact member 30 is disposed at the center of the circuit pattern 12 in the width direction. Furthermore, by setting the curvature of the outer corner (and front end) of the circuit pattern 12 in which the contact member 30 is disposed in accordance with the outer periphery of the opening of the contact member 30, the curvature of the outer corner can be reduced without restricting the placement area of ​​the contact member 30.

Claims

1. A semiconductor device, characterized in that, have: An insulating circuit board having an insulating plate and a plurality of circuit patterns formed on the front side of the insulating plate. In the plurality of circuit patterns, among the outer edge corners facing the outer edge of the insulating plate, the curvature of the outer edge corner corresponding to the corner of the insulating plate is less than the curvature of the outer edge corner not corresponding to the corner of the insulating plate. The semiconductor device also includes a semiconductor chip. The plurality of circuit patterns includes a plurality of first circuit patterns and a plurality of second circuit patterns. The plurality of first circuit patterns are configured with the semiconductor chip and are disposed on the inner side of the insulating plate. The plurality of second circuit patterns include the outer corner portion and are disposed on the outer edge portion of the insulating plate. The semiconductor device further comprises: External connection terminals; and A cylindrical contact component is disposed on the plurality of second circuit patterns and is pressed into the external connection terminal. The radius of curvature of the outer corner of the plurality of second circuit patterns on which the contact member is disposed is greater than or equal to the radius of curvature of the contact member, and half the width of the plurality of second circuit patterns on which the contact member is disposed is less than or equal to the radius of curvature.

2. The semiconductor device according to claim 1, characterized in that, The plurality of circuit patterns are respectively arranged in a first forming region that is rectangular when viewed from above.

3. The semiconductor device according to claim 2, characterized in that, In the plurality of circuit patterns, the curvature of the inner corners (excluding the outer corners) is greater than the curvature of the outer corners.

4. The semiconductor device according to claim 1, characterized in that, The insulating circuit board also includes a metal plate formed on the back side of the insulating plate. The total volume of all the circuit patterns is less than the volume of the metal plate.

5. The semiconductor device according to claim 1, characterized in that, The surfaces of the multiple circuit patterns were plated with a plating material.

6. The semiconductor device according to claim 1, characterized in that, The area of ​​each of the plurality of second circuit patterns is smaller than the area of ​​each of the plurality of first circuit patterns.

7. The semiconductor device according to claim 6, characterized in that, The insulating circuit board also includes a metal plate formed on the back side of the insulating plate. The semiconductor device also includes a plurality of recesses formed on the back side of the metal plate, and in a top view, formed at a position further outward than the plurality of second circuit patterns.

8. The semiconductor device according to claim 2, characterized in that, The insulating circuit board further includes a metal plate forming a second forming region on the back side of the insulating plate. When viewed from above, the first forming region is positioned inside the second forming region.

9. A semiconductor device, characterized in that, have, Contact components; as well as An insulating circuit board includes an insulating plate and a plurality of circuit patterns. The plurality of circuit patterns are disposed on the front side of the insulating plate and include a first circuit pattern. The first circuit pattern is disposed on the outer edge side of the insulating plate and is provided with the contact member. The radius of curvature of the outer corner of the first circuit pattern is greater than or equal to the radius of curvature of the contact member, and half the width of the first circuit pattern on which the contact member is disposed is set to be less than or equal to the radius of curvature.

Images